WO2017149925A1 - Feuille de traitement de semi-conducteur - Google Patents

Feuille de traitement de semi-conducteur Download PDF

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Publication number
WO2017149925A1
WO2017149925A1 PCT/JP2017/000186 JP2017000186W WO2017149925A1 WO 2017149925 A1 WO2017149925 A1 WO 2017149925A1 JP 2017000186 W JP2017000186 W JP 2017000186W WO 2017149925 A1 WO2017149925 A1 WO 2017149925A1
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WIPO (PCT)
Prior art keywords
adhesive layer
semiconductor processing
semiconductor
release film
processing sheet
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PCT/JP2017/000186
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English (en)
Japanese (ja)
Inventor
明徳 佐藤
優智 中村
茂之 山下
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リンテック株式会社
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Priority to KR1020187016426A priority Critical patent/KR20180122316A/ko
Priority to CN201780003864.0A priority patent/CN108271381B/zh
Priority to JP2018502547A priority patent/JP7042211B2/ja
Publication of WO2017149925A1 publication Critical patent/WO2017149925A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/40—Adhesives in the form of films or foils characterised by release liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature

Definitions

  • the present invention relates to a sheet for semiconductor processing.
  • a semiconductor processing sheet such as a dicing sheet or a back grind sheet is generally used.
  • a semiconductor processing sheet is required to have transparency to light having a desired wavelength (hereinafter sometimes referred to as “light transmittance”).
  • the tip dicing method is used in which the wafer is half-cut first and then back grinding is used, or laser light is used.
  • a stealth dicing method is used in which a modified layer is provided inside a wafer and then backside grinding is performed to separate chips.
  • a modified layer is formed inside a wafer by irradiation with laser light and then applied to a semiconductor processing sheet, there is a risk that the wafer will be damaged by the pressure applied.
  • a modified layer is formed by attaching a wafer to a semiconductor processing sheet in advance and then irradiating the wafer with laser light through the semiconductor processing sheet. In this case, in order to irradiate the laser beam satisfactorily, the semiconductor processing sheet needs to transmit the laser beam.
  • the product surface or lot number is usually laser-printed on the back surface of the chip.
  • a step of transporting the wafer whose back surface grinding has been completed to a laser printing apparatus Thin wafers used in recent years have a high risk of wafer cracking during transport. In order to avoid this risk, it has been devised that a thinned wafer is transported while being stuck to a semiconductor processing sheet and printed by irradiating a laser beam through the semiconductor processing sheet. In order to perform this laser printing satisfactorily, the semiconductor processing sheet needs to transmit laser light.
  • laser printing may be performed on the protective film.
  • printing is performed by irradiating the protective film forming layer of the semiconductor processing sheet including the protective film forming layer with laser light through the base material or the adhesive layer of the semiconductor processing sheet.
  • the base material and the adhesive layer of the semiconductor processing sheet it is necessary for the base material and the adhesive layer of the semiconductor processing sheet to transmit laser light.
  • the semiconductor processing sheet generally includes a base material and an adhesive layer laminated on one surface of the base material. Furthermore, a release film may be provided on the pressure-sensitive adhesive layer for the purpose of protecting the pressure-sensitive adhesive layer until the semiconductor processing sheet is used.
  • Patent Documents 1 and 2 describe a semiconductor processing sheet in which a base material, an adhesive layer, and a release film are laminated in this order. In general, other layers such as an adhesive layer and a protective film forming layer may be provided between the pressure-sensitive adhesive layer and the release film, depending on the use of the semiconductor processing sheet.
  • excellent light transmittance with respect to light having a desired wavelength can be achieved by increasing the light transmittance of the substrate and the pressure-sensitive adhesive layer, respectively.
  • it can be achieved by increasing the smoothness of the surface of the semiconductor processing sheet on the substrate side, that is, the surface of the substrate opposite to the pressure-sensitive adhesive layer.
  • Patent Documents 1 and 2 it is opposite to the pressure-sensitive adhesive layer in the release film for the purpose of avoiding air trapping between the semiconductor processing sheets when the semiconductor processing sheet is wound into a roll. It is disclosed to emboss the side surface.
  • the semiconductor processing sheet disclosed in Patent Document 1 or 2 does not have a high smoothness on the surface of the base material, and the inspection and laser through the semiconductor processing sheet as described above. Cannot be used for dicing, stealth dicing, laser printing, etc.
  • the present invention has been made in view of the above circumstances, and an object of the present invention is to provide a semiconductor processing sheet which is excellent in light transmittance and hardly causes blocking.
  • the present invention provides a substrate having a first surface and a second surface located on the opposite side of the first surface, and a second surface of the substrate. And a semiconductor adhesive layer having a first surface on a side proximal to the substrate and a second surface distal to the substrate, and a second in the semiconductor adhesive layer
  • a semiconductor processing sheet comprising at least a release film laminated on a surface side, having a first surface on a side proximal to the semiconductor adhesive layer, and having a second surface on a side distal to the semiconductor adhesive layer
  • the arithmetic average roughness Ra on the first surface of the substrate is 0.01 to 0.8 ⁇ m, and the first surface of the substrate and the second surface of the release film are laminated.
  • the peeling force at the interface between the first surface of the substrate and the second surface of the release film after storage at 40 ° C. for 3 days is ⁇
  • the second surface of the semiconductor adhesive layer and the first surface of the release film are pasted and stored at 40 ° C. for 3 days, and the second surface of the semiconductor adhesive layer and the release film
  • the peel force at the interface with the first surface is ⁇
  • the value of ⁇ to ⁇ ( ⁇ / ⁇ ) is 0 or more and less than 1.0
  • the peel force ⁇ is 10 to 1000 mN.
  • a semiconductor processing sheet characterized by being / 50 mm (Invention 1).
  • the arithmetic mean roughness Ra on the first surface of the substrate is 0.01 to 0.8 ⁇ m, so that the smoothness on the surface on the substrate side is good.
  • the substrate has a high light transmittance for light of a desired wavelength.
  • the value ( ⁇ / ⁇ ) of the peel force ⁇ to the peel force ⁇ is 0 or more and less than 1.0, the adhesion between the semiconductor processing sheets in the state of being wound in a roll shape can be improved. It does not become higher than the adhesion between the layers constituting the processing sheet, and exhibits excellent blocking resistance. Accordingly, the feeding can be performed satisfactorily and peeling at an unintended interface does not occur at the time of feeding.
  • the peeling force ⁇ is 10 to 1000 mN / 50 mm, the laminate including the base material and the semiconductor adhesive layer can be peeled from the release film with an appropriate peeling force when using the semiconductor processing sheet. .
  • the arithmetic average roughness Ra of the second surface of the release film is preferably 0.02 to 0.8 ⁇ m (Invention 2).
  • the release film preferably includes a release agent layer on each of the first surface side and the second surface side (Invention 3).
  • the semiconductor adhesive layer may be an adhesive layer (Invention 4).
  • the semiconductor adhesive layer may be an adhesive layer (Invention 5).
  • the semiconductor adhesive layer may be a protective film forming layer (Invention 6).
  • the semiconductor adhesive layer may be composed of an adhesive layer and an adhesive layer located between the adhesive layer and the release film (Invention 7).
  • the semiconductor adhesive layer may be composed of an adhesive layer and a protective film forming layer located between the adhesive layer and the release film (Invention 8).
  • the semiconductor processing sheet is a laminate including the base material and the semiconductor adhesive layer having a shape different from that of the release film in plan view on the long release film
  • the body may be laminated (Invention 9).
  • this invention is laminated
  • the said base material A semiconductor adhesive layer having a first surface proximal to the substrate and having a second surface distal to the substrate, and is laminated on the second surface side of the semiconductor adhesive layer, the semiconductor A jig adhesive layer having a first surface on the side proximal to the adhesive layer and having a second surface on the side distal to the semiconductor adhesive layer, and at least a first adhesive layer in the jig adhesive layer;
  • a release film having a first surface on the side proximal to the jig adhesive layer and a second surface distal to the jig adhesive layer.
  • the arithmetic average roughness Ra of the first surface of the base material is 0.01 to 0.8 ⁇ m, and the first base material of the base material And the release film at the interface between the first surface of the substrate and the second surface of the release film after laminating the film and the second surface of the release film and storing at 40 ° C. for 3 days. And the second surface of the pressure-sensitive adhesive layer for jigs after the second surface of the pressure-sensitive adhesive layer for jigs and the first surface of the release film are pasted and stored at 40 ° C. for 3 days.
  • the peel force at the interface between the film and the first surface of the release film is ⁇
  • the ratio of ⁇ to ⁇ ( ⁇ / ⁇ ) is 0 or more and less than 1.0
  • the peel force ⁇ Provides a sheet for semiconductor processing, characterized in that it is 10 to 1000 mN / 50 mm (Invention 10).
  • the present invention it is possible to provide a semiconductor processing sheet which is excellent in light transmittance and hardly causes blocking.
  • FIG. 10 is a cross-sectional view taken along line AA in FIG. 9.
  • FIG. 1 shows a semiconductor processing sheet 1 according to the first embodiment.
  • the semiconductor processing sheet 1 is configured by laminating a base material 10, a semiconductor adhesive layer 80, and a release film 30 in this order.
  • the base material 10 has a first surface 101 on a side distal to the semiconductor adhesive layer 80 and a second surface 102 on a side proximal to the semiconductor adhesive layer 80.
  • the semiconductor adhesive layer 80 has a first surface 801 on the side proximal to the substrate 10 and a second surface 802 on the side proximal to the release film 30.
  • the release film 30 has a first surface 301 on a side proximal to the semiconductor adhesive layer 80 and a second surface 302 on a side distal to the semiconductor adhesive layer 80.
  • the arithmetic average roughness Ra on the first surface 101 of the substrate 10 is 0.01 to 0.8 ⁇ m. Since the first surface 101 of the substrate 10 is smooth as described above, the light irradiated to the first surface 101 is reduced from being scattered on the surface, and the substrate 10 exhibits high light transmittance. Is done.
  • the ratio value ( ⁇ / ⁇ ) of the peeling force ⁇ to the peeling force ⁇ is 0 or more and less than 1.0.
  • the peeling force ⁇ is a peeling force at the interface between the first surface 101 of the substrate 10 and the second surface 302 of the peeling film 30 as described later, and the peeling force ⁇ is described later.
  • the peeling force at the interface between the second surface 802 of the semiconductor adhesive layer 80 and the first surface 301 of the release film 30 As shown, the peeling force at the interface between the second surface 802 of the semiconductor adhesive layer 80 and the first surface 301 of the release film 30.
  • the peeling force ⁇ is 10 to 1000 mN / 50 mm.
  • the peeling force at the interface between the first surface 101 of the substrate 10 and the second surface 302 of the release film 30 is ⁇
  • the semiconductor When the peeling force at the interface between the second surface 802 of the adhesive layer 80 and the first surface 301 of the release film 30 is ⁇ , the value of ⁇ to ⁇ ( ⁇ / ⁇ ) is 0 or more. , 0.05 or more, and particularly preferably 0.1 or more.
  • the value ( ⁇ / ⁇ ) of the ratio is less than 1.0, preferably 0.5 or less, and particularly preferably 0.2 or less.
  • the peeling force ⁇ is a value obtained by laminating the first surface 101 of the substrate 10 and the second surface 302 of the release film 30 and storing them in a dry state at 40 ° C. for 3 days. It is the peeling force of the peeling film 30 with respect to. Further, the peel force ⁇ is a state in which the second surface 802 of the semiconductor adhesive layer 80 and the first surface 301 of the release film 30 are adhered and the semiconductor after being stored in a dry state at 40 ° C. for 3 days. This is the peeling force of the release film 30 on the adhesive layer 80.
  • the case where the value of the ratio ( ⁇ / ⁇ ) is 0 is a case where the value of the peeling force ⁇ is 0, which is so small that the peeling force ⁇ cannot be measured, or from the base material 10 before the measurement. This means that the release film 30 has already been peeled off.
  • the ratio ( ⁇ / ⁇ ) of the peeling force ⁇ to the peeling force ⁇ is 0 or more and less than 1.0, the semiconductor processing sheets 1 overlap each other as shown in FIG. The adhesiveness between the sheets 1 for manufacturing does not become higher than the adhesiveness between the layers constituting the semiconductor processing sheet.
  • the adhesion between the first surface 101 of the substrate 10 and the second surface 302 of the release film 30 facing the first surface 101 is the adhesion between the substrate 10 and the semiconductor adhesive layer 80.
  • the adhesion between the semiconductor adhesive layer 80 and the release film 30 does not become higher.
  • peeling force (beta) is prescribed
  • the release force ⁇ at the interface between the semiconductor adhesive layer 80 and the release film 30 is defined.
  • the semiconductor processing sheet 2 according to the second embodiment including the jig adhesive layer 60 described later, the jig adhesive layer together with the semiconductor adhesive layer 80 with respect to the release film 30. 60 contacts.
  • the contact between the release film 30 and the pressure-sensitive adhesive layer 60 for jigs is more when the release film 30 is peeled from the semiconductor processing sheet 2 than the contact between the release film 30 and the semiconductor adhesive layer 80.
  • the effect on peeling force is large. Therefore, in the semiconductor processing sheet 2 including the jig pressure-sensitive adhesive layer 60, as will be described later, the surface of the pressure-sensitive adhesive layer 60 for jigs on the side of the release film 30 (second surface 602) and the release film 30.
  • the peeling force ⁇ at the interface with the surface on the jig pressure-sensitive adhesive layer 60 side (first surface 301) is defined.
  • the peel force ⁇ is 10 to 1000 mN / 50 mm, preferably 10 to 500 mN / 50 mm, and particularly preferably 30 to 200 mN / 50 mm.
  • the peeling force ⁇ is less than 10 mN / 50 mm, the laminate of the substrate 10 and the semiconductor adhesive layer 80 is peeled from the peeling film 30 when the semiconductor processing sheet 1 is unwound from the roll or at any other unintended stage. It becomes easy to do.
  • peeling force (beta) exceeds 1000 mN / 50mm
  • seat 1 for semiconductor processing it will become difficult to peel the laminated body of the base material 10 and the semiconductor sticking layer 80 from the peeling film 30, and workability
  • a wafer mounter is used to sequentially mount the laminate on a semiconductor wafer, the laminate does not peel well from the release film 30 and cannot be mounted.
  • the thickness of the semiconductor processing sheet 1 according to the present embodiment is not limited as long as it can function properly in the process in which the semiconductor processing sheet 1 is used.
  • the thickness is usually preferably from 50 to 300 ⁇ m, particularly preferably from 50 to 250 ⁇ m, and further preferably from 50 to 230 ⁇ m.
  • seat 1 for semiconductor processing in this specification means the thickness except the peeling film 30 peeled before using the sheet
  • the arithmetic average roughness Ra on the first surface 101 of the base material 10 is 0.01 to 0.8 ⁇ m, particularly 0.02 to 0.5 ⁇ m. It is preferable that it is 0.03 to 0.3 ⁇ m.
  • the arithmetic average roughness Ra is less than 0.01 ⁇ m, the first surface 101 becomes excessively smooth, the value of the peeling force ⁇ becomes too large, and the semiconductor processing sheet 1 is rolled up. Blocking easily occurs, and it is difficult to satisfy the above-described relationship between the peeling force ⁇ and the peeling force ⁇ .
  • arithmetic average roughness Ra exceeds 0.8 ⁇ m, the light irradiated on the first surface 101 is likely to be scattered on the surface, and the light transmittance is impaired.
  • arithmetic mean roughness Ra in this specification is measured based on JISB0601: 2013, and the detail of the measuring method is as showing in the Example mentioned later.
  • the base 10 In order to achieve the arithmetic average roughness Ra, it is preferable to produce the base 10 so as to have the arithmetic average roughness Ra.
  • the arithmetic average roughness Ra on the second surface 102 of the substrate 10 can be appropriately set as long as the light transmittance of the substrate 10 can be ensured, and is preferably 0.01 to 2.0 ⁇ m, for example.
  • the thickness is preferably 0.03 to 1.5 ⁇ m, and more preferably 0.05 to 1.0 ⁇ m.
  • the constituent material of the base material 10 exhibits excellent light transmittance with respect to light of a desired wavelength, and further exhibits a desired function in the use process of the semiconductor processing sheet 1. As long as it does, it is not specifically limited.
  • the base material 10 may include a film (resin film) whose main material is a resin-based material.
  • the base material 10 consists only of a resin film.
  • the resin film examples include: ethylene-vinyl acetate copolymer film; ethylene- (meth) acrylic acid copolymer film, ethylene- (meth) acrylic acid methyl copolymer film, and other ethylene- (meth) acrylic Ethylene copolymer films such as acid ester copolymer films; Polyolefin films such as polyethylene films, polypropylene films, polybutene films, polybutadiene films, polymethylpentene films, ethylene-norbornene copolymer films, norbornene resin films; Polyvinyl chloride film such as vinyl film and vinyl chloride copolymer film; Polyester film such as polyethylene terephthalate film, polybutylene terephthalate film and polyethylene naphthalate Beam; and the like fluororesin film; (meth) acrylic acid ester copolymer film; polyurethane film; polyimide film; polystyrene films; polycarbonate films.
  • Polyolefin films such as
  • polyethylene film examples include a low density polyethylene (LDPE) film, a linear low density polyethylene (LLDPE) film, and a high density polyethylene (HDPE) film.
  • LDPE low density polyethylene
  • LLDPE linear low density polyethylene
  • HDPE high density polyethylene
  • modified films such as these crosslinked films and ionomer films are also used.
  • the substrate 10 may be a film made of one of these, or may be a film made of a material in which two or more of these are combined.
  • stacked may be sufficient. In this laminated film, the material constituting each layer may be the same or different.
  • the substrate 10 is preferably an ethylene-vinyl acetate copolymer film, an ethylene-methyl methacrylate copolymer film, a polyvinyl chloride film, or a polypropylene film.
  • (meth) acrylic acid in the present specification means both acrylic acid and methacrylic acid. The same applies to other similar terms.
  • a flame retardant, a plasticizer, an antistatic agent, a lubricant, an antioxidant, a colorant, and an infrared absorber are included in the above film as long as the excellent light transmittance for light of a desired wavelength is not impaired.
  • various additives such as an ultraviolet absorber and an ion scavenger may be contained. The content of these additives is not particularly limited, but it is preferable that the base material 10 has an excellent light transmittance and a desired function.
  • the pressure-sensitive adhesive layer 20 may be used as the semiconductor adhesive layer 80, and when energy rays are used to cure the pressure-sensitive adhesive layer 20, the base material 10 is light transmissive to the energy rays. It is preferable to have.
  • the energy beam include ultraviolet rays and electron beams.
  • surface treatment such as primer treatment, corona treatment, plasma treatment or the like is performed in order to improve adhesion to the semiconductor adhesive layer 80. May be applied.
  • the thickness of the base material 10 is not limited as long as it can function properly in the process in which the semiconductor processing sheet 1 is used.
  • the thickness is usually preferably 20 to 450 ⁇ m, particularly preferably 25 to 300 ⁇ m, and more preferably 50 to 200 ⁇ m.
  • the arithmetic average roughness Ra of the second surface 302 of the release film 30 is preferably 0.02 to 0.8 ⁇ m, particularly preferably 0.03 to 0.5 ⁇ m, and more preferably 0. It is preferably from 05 to 0.3 ⁇ m.
  • the arithmetic average roughness Ra of the second surface 302 is 0.02 to 0.8 ⁇ m, the second surface 302 has an appropriate roughness, and the value of the peeling force ⁇ does not become excessively large. Thereby, it becomes easy to satisfy
  • the arithmetic average roughness Ra of the second surface 302 is 0.02 ⁇ m or more, the first surface 101 of the smooth substrate 10 is formed when the semiconductor processing sheet 1 is rolled up. In contrast, it is difficult for the second surface 302 of the release film 30 to adhere, and as a result, the occurrence of blocking can be effectively prevented. Furthermore, when the arithmetic average roughness Ra of the second surface 302 is 0.8 ⁇ m or less, the surface shape of the second surface 302 of the release film 30 when the semiconductor processing sheet 1 is wound into a roll shape. Even if the transfer to the first surface 101 of the substrate 10 occurs, the smoothness of the first surface 101 is prevented from being lowered.
  • the release film 30 may be manufactured so as to have the arithmetic average roughness Ra when the release film 30 is manufactured. Or after manufacturing the constituent material of the peeling film 30 in a sheet form, you may surface-treat the said sheet so that it may have the said arithmetic mean roughness Ra.
  • the release film 30 having the arithmetic average roughness Ra can be produced by adjusting the surface roughness of a roll used for extrusion molding of the release film 30.
  • the release film 30 having the arithmetic average roughness Ra can be obtained by subjecting the sheet to sandblasting or embossing.
  • the arithmetic average roughness Ra on the first surface 301 of the release film 30 can be appropriately set as long as the above-described relationship between the release force ⁇ and the release force ⁇ and the above-described value of the release force ⁇ can be achieved.
  • it is preferably 0.02 to 0.10 ⁇ m, particularly preferably 0.02 to 0.07 ⁇ m, and further preferably 0.03 to 0.05 ⁇ m.
  • the release film 30 is usually provided with a release agent layer on the first surface 301 side in order to exhibit the peelability to the semiconductor adhesive layer 80. Moreover, in the peeling film 30 of the sheet
  • the release film 30 has a configuration in which a release agent layer is provided on both surfaces of a substrate such as a resin film, for example.
  • the release agent layer on the second surface 302 side, it is easy to achieve the above-described relationship between the peeling force ⁇ and the peeling force ⁇ .
  • the release agent silicone release agents, alkyd release agents, fluorine release agents, long chain alkyl release agents, rubber release agents, and the like can be used.
  • silicone release agent on the first surface 301 side, and the ratio of the peeling force ⁇ to the peeling force ⁇ ( ⁇ / ⁇ ) Is easily adjusted to the above-described value, it is preferable to use a silicone release agent or an alkyd release agent on the second surface 302 side.
  • a resin film can be used as a material constituting the release film 30, for example.
  • the resin film include polyester films such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate, and polyolefin films such as polypropylene and polyethylene.
  • the thickness of the release film 30 is not particularly limited, it is usually about 12 to 250 ⁇ m.
  • the semiconductor affixing layer 80 refers to a layer to which a semiconductor wafer or the like is affixed or a layer to be affixed to a semiconductor wafer or the like when the semiconductor processing sheet 1 according to this embodiment is used. The sticking at this time may be sticking temporarily performed when the semiconductor processing sheet 1 is used, or may be sticking continued even after the semiconductor processing sheet 1 is used.
  • Preferred examples of the semiconductor adhesive layer 80 include a pressure-sensitive adhesive layer 20, an adhesive layer 40, a protective film forming layer 50, a laminate composed of the pressure-sensitive adhesive layer 20 and the adhesive layer 40, and a pressure-sensitive adhesive layer 20 and a protective film forming layer. And the like.
  • FIG. 3 shows a first mode of the semiconductor processing sheet 1 according to the first embodiment.
  • the semiconductor adhesive layer 80 is the pressure-sensitive adhesive layer 20.
  • the pressure-sensitive adhesive layer 20 has a first surface 201 on the side proximal to the substrate 10 and a second surface 202 on the side proximal to the release film 30.
  • the semiconductor processing sheet 1a can be used as a dicing sheet, for example.
  • FIG. 4 shows a second mode of the semiconductor processing sheet 1 according to the first embodiment.
  • the semiconductor adhesive layer 80 is the adhesive layer 40.
  • the adhesive layer 40 has a first surface 401 on the side proximal to the substrate 10 and a second surface 402 on the side proximal to the release film 30.
  • the semiconductor processing sheet 1b can be used as a die bonding sheet, for example.
  • FIG. 5 shows a third mode of the semiconductor processing sheet 1 according to the first embodiment.
  • the semiconductor adhesive layer 80 is the protective film forming layer 50.
  • the protective film forming layer 50 has a first surface 501 on the side proximal to the substrate 10 and a second surface 502 on the side proximal to the release film 30.
  • the semiconductor processing sheet 1c can be used as a protective film forming sheet, for example.
  • FIG. 6 shows a fourth mode of the semiconductor processing sheet 1 according to the first embodiment.
  • the semiconductor adhesive layer 80 is a laminate including the adhesive layer 20 and the adhesive layer 40.
  • the pressure-sensitive adhesive layer 20 is located on the side proximal to the substrate 10
  • the adhesive layer 40 is located on the side proximal to the release film 30.
  • the pressure-sensitive adhesive layer 20 has a first surface 201 on the side proximal to the substrate 10 and a second surface 202 on the side proximal to the release film 30.
  • the adhesive layer 40 has a first surface 401 on the side proximal to the substrate 10 and a second surface 402 on the side proximal to the release film 30.
  • the semiconductor processing sheet 1d can be used as, for example, a dicing die bonding sheet.
  • FIG. 7 shows a fifth mode of the semiconductor processing sheet 1 according to the first embodiment.
  • the semiconductor adhesive layer 80 is a laminate including the adhesive layer 20 and the protective film forming layer 50.
  • the pressure-sensitive adhesive layer 20 is located on the side proximal to the substrate 10, and the protective film forming layer 50 is located on the side proximal to the release film 30.
  • the pressure-sensitive adhesive layer 20 has a first surface 201 on the side proximal to the substrate 10 and a second surface 202 on the side proximal to the release film 30.
  • the protective film forming layer 50 has a first surface 501 on the side proximal to the substrate 10 and a second surface 502 on the side proximal to the release film 30.
  • the semiconductor processing sheet 1e can be used for dicing a semiconductor wafer. Further, after the dicing, the protective film forming layer 50 can be heated to form a protective film on the semiconductor chip.
  • the semiconductor processing sheet 1e can also be used as a protective film forming sheet.
  • the pressure-sensitive adhesive layer 20 may be composed of a non-energy ray-curable pressure-sensitive adhesive (a polymer that does not have energy ray-curable properties), or energy. You may be comprised from a line-curable adhesive.
  • a non-energy ray curable pressure-sensitive adhesive those having desired adhesive strength and removability are preferable.
  • Polyvinyl ether-based pressure-sensitive adhesives can be used. Among these, an acrylic pressure-sensitive adhesive that can effectively suppress dropping of a semiconductor wafer, a semiconductor chip, or the like in a dicing process or the like is preferable.
  • the adhesive strength of the energy ray curable adhesive decreases when irradiated with energy rays, when it is desired to separate the semiconductor wafer 1 or the semiconductor processing sheet 1 from the semiconductor processing sheet 1, the energy ray curable adhesive can be easily obtained by irradiating energy rays. Can be separated.
  • the energy ray-curable pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer 20 may be composed mainly of a polymer having energy ray-curability, or a non-energy ray-curable polymer (a polymer having no energy ray-curability). ) And a monomer and / or oligomer having at least one energy ray-curable group. Further, it may be a mixture of a polymer having energy ray curable properties and a non-energy ray curable polymer, a polymer having energy ray curable properties and a monomer having at least one energy ray curable group and / or It may be a mixture with an oligomer or a mixture of these three.
  • the energy ray-curable pressure-sensitive adhesive is composed mainly of a polymer having energy ray-curability.
  • the polymer having energy ray curability is a (meth) acrylic acid ester (co) polymer (A) (hereinafter referred to as “energy ray”) in which a functional group having energy ray curability (energy ray curable group) is introduced into the side chain. It may be referred to as “curable polymer (A)”).
  • This energy beam curable polymer (A) reacts an acrylic copolymer (a1) having a functional group-containing monomer unit with an unsaturated group-containing compound (a2) having a functional group bonded to the functional group. It is preferable that it is obtained.
  • the acrylic copolymer (a1) is composed of a structural unit derived from a functional group-containing monomer and a structural unit derived from a (meth) acrylic acid ester monomer or a derivative thereof.
  • the functional group-containing monomer as a constituent unit of the acrylic copolymer (a1) contains a polymerizable double bond and a functional group such as a hydroxy group, a carboxy group, an amino group, a substituted amino group, and an epoxy group in the molecule. It is preferable that the monomer has
  • hydroxy group-containing monomer examples include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, 3-hydroxybutyl ( And (meth) acrylate and 4-hydroxybutyl (meth) acrylate. These may be used alone or in combination of two or more.
  • carboxy group-containing monomer examples include ethylenically unsaturated carboxylic acids such as acrylic acid, methacrylic acid, crotonic acid, maleic acid, itaconic acid, and citraconic acid. These may be used alone or in combination of two or more.
  • carboxylic acids such as acrylic acid, methacrylic acid, crotonic acid, maleic acid, itaconic acid, and citraconic acid. These may be used alone or in combination of two or more.
  • amino group-containing monomer or substituted amino group-containing monomer examples include aminoethyl (meth) acrylate and n-butylaminoethyl (meth) acrylate. These may be used alone or in combination of two or more.
  • Examples of the (meth) acrylic acid ester monomer constituting the acrylic copolymer (a1) include alkyl (meth) acrylates having 1 to 20 carbon atoms in the alkyl group, cycloalkyl (meth) acrylates, and benzyl (meth) acrylates. Is used. Among these, particularly preferred are alkyl (meth) acrylates having an alkyl group having 1 to 18 carbon atoms, such as methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, and n-butyl (meth) acrylate. 2-ethylhexyl (meth) acrylate or the like is used.
  • the acrylic copolymer (a1) usually contains 3 to 100% by mass, preferably 5 to 40% by mass of a structural unit derived from the functional group-containing monomer, and is a (meth) acrylic acid ester monomer or its
  • the structural unit derived from the derivative is usually contained in a proportion of 0 to 97% by mass, preferably 60 to 95% by mass.
  • the acrylic copolymer (a1) can be obtained by copolymerizing a functional group-containing monomer as described above with a (meth) acrylic acid ester monomer or a derivative thereof in a conventional manner. Dimethylacrylamide, vinyl formate, vinyl acetate, styrene and the like may be copolymerized.
  • an energy beam curable polymer (A ) Is obtained.
  • the functional group of the unsaturated group-containing compound (a2) can be appropriately selected according to the type of functional group of the functional group-containing monomer unit of the acrylic copolymer (a1).
  • the functional group of the acrylic copolymer (a1) is a hydroxy group, an amino group or a substituted amino group
  • the functional group of the unsaturated group-containing compound (a2) is preferably an isocyanate group or an epoxy group.
  • the functional group that the system copolymer (a1) has is an epoxy group
  • the functional group that the unsaturated group-containing compound (a2) has is preferably an amino group, a carboxy group, or an aziridinyl group.
  • the unsaturated group-containing compound (a2) contains at least one, preferably 1-6, more preferably 1-4, energy-polymerizable carbon-carbon double bonds in one molecule. ing.
  • Specific examples of such unsaturated group-containing compound (a2) include, for example, 2-methacryloyloxyethyl isocyanate, meta-isopropenyl- ⁇ , ⁇ -dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, 1,1- ( Bisacryloyloxymethyl) ethyl isocyanate; acryloyl monoisocyanate compound obtained by reaction of diisocyanate compound or polyisocyanate compound with hydroxyethyl (meth) acrylate; diisocyanate compound or polyisocyanate compound, polyol compound, and hydroxyethyl (meth) Acryloyl monoisocyanate compound obtained by reaction with acrylate; glycidyl (meth)
  • the unsaturated group-containing compound (a2) is usually used in a proportion of 5 to 95 mol%, preferably 10 to 95 mol%, based on the functional group-containing monomer of the acrylic copolymer (a1).
  • the functional group of the acrylic copolymer (a1) and the functional group of the unsaturated group-containing compound (a2) Depending on the combination, the reaction temperature, pressure, solvent, time, presence / absence of catalyst, and type of catalyst can be appropriately selected. As a result, the functional group present in the acrylic copolymer (a1) reacts with the functional group in the unsaturated group-containing compound (a2), so that the unsaturated group is contained in the acrylic copolymer (a1). It introduce
  • the weight average molecular weight of the energy ray curable polymer (A) thus obtained is preferably 10,000 or more, particularly preferably 150,000 to 1,500,000, and more preferably 200,000 It is preferably 000 to 1,000,000.
  • the weight average molecular weight (Mw) in this specification is the value of standard polystyrene conversion measured by the gel permeation chromatography method (GPC method).
  • the energy ray curable adhesive is mainly composed of an energy ray curable polymer such as an energy ray curable polymer (A)
  • the energy ray curable adhesive is an energy ray curable monomer.
  • oligomer (B) may further be contained.
  • the energy ray-curable monomer and / or oligomer (B) for example, an ester of a polyhydric alcohol and (meth) acrylic acid or the like can be used.
  • Examples of the energy ray-curable monomer and / or oligomer (B) include monofunctional acrylic acid esters such as cyclohexyl (meth) acrylate and isobornyl (meth) acrylate, trimethylolpropane tri (meth) acrylate, penta Erythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, dipentaerythritol hexa (meth) acrylate, 1,4-butanediol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, polyethylene glycol Polyfunctional acrylic esters such as di (meth) acrylate and dimethyloltricyclodecane di (meth) acrylate, polyester oligo (meth) acrylate, polyurethane oligo (meta Acrylate, and the like.
  • monofunctional acrylic acid esters such as
  • the energy ray curable monomer (B) When the energy ray curable monomer (B) is blended with the energy ray curable polymer (A), the energy ray curable monomer and / or oligomer (B) in the energy ray curable adhesive is used. ) Is preferably 10 to 40 parts by weight, more preferably 30 to 350 parts by weight, based on 100 parts by weight of the energy beam curable polymer (A).
  • photopolymerization initiator (C) examples include benzophenone, acetophenone, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, benzoin dimethyl ketal, 2,4-diethylthioxanthone, 1-hydroxycyclohexyl phenyl ketone, benzyldiphenyl sulfide, tetramethylthiuram monosulfide, azobisisobutyronitrile, benzyl, dibenzyl, diacetyl, ⁇ -chloranthraquinone, (2,4 6-trimethylbenzyldiphenyl) phosphine oxide, 2-benzothiazole-N, N-diethyldithiocarbamate, oligo ⁇ 2-hydroxy-2-me Le-1- [4-
  • the photopolymerization initiator (C) is energy beam curable copolymer (A) (when energy beam curable monomer and / or oligomer (B) is blended, energy beam curable copolymer (A). And energy ray-curable monomer and / or oligomer (B) in a total amount of 100 parts by weight) used in an amount in the range of 0.1 to 10 parts by weight, particularly 0.5 to 6 parts by weight, per 100 parts by weight. It is preferred that
  • other components may be appropriately blended in addition to the above components.
  • other components include a non-energy ray curable polymer component or oligomer component (D), and a crosslinking agent (E).
  • non-energy ray curable polymer component or oligomer component (D) examples include polyacrylates, polyesters, polyurethanes, polycarbonates, polyolefins, and the like, and the weight average molecular weight (Mw) is 3,000 to 2,500, 000 polymers or oligomers are preferred.
  • Mw weight average molecular weight
  • strength after hardening, the adhesiveness with another layer, storage stability, etc. can be improved.
  • the compounding quantity of the said component (D) is not specifically limited.
  • a polyfunctional compound having reactivity with the functional group of the energy beam curable copolymer (A) or the like can be used.
  • examples of such polyfunctional compounds include isocyanate compounds, epoxy compounds, amine compounds, melamine compounds, aziridine compounds, hydrazine compounds, aldehyde compounds, oxazoline compounds, metal alkoxide compounds, metal chelate compounds, metal salts, ammonium salts, A reactive phenol resin etc. can be mentioned.
  • blending the said component (E) with an energy-beam curable adhesive, the adhesiveness and peelability before hardening, the cohesiveness of an adhesive, etc. can be improved.
  • the blending amount of the component (E) is not particularly limited, and is appropriately determined in the range of 0 to 15 parts by mass with respect to 100 parts by mass of the energy beam curable copolymer (A).
  • the energy beam curable pressure-sensitive adhesive is mainly composed of a mixture of a non-energy beam curable polymer component and a monomer and / or oligomer having at least one energy beam curable group will be described below. .
  • non-energy ray curable polymer component for example, the same components as the acrylic copolymer (a1) described above can be used.
  • the same one as the above-mentioned component (B) can be selected.
  • the blending ratio of the non-energy ray curable polymer component and the monomer and / or oligomer having at least one energy ray curable group is at least one or more with respect to 100 parts by mass of the non-energy ray curable polymer component.
  • the monomer and / or oligomer having an energy ray curable group is preferably 10 to 250 parts by mass, particularly preferably 25 to 100 parts by mass.
  • the photopolymerization initiator (C) and the crosslinking agent (E) can be appropriately blended as described above.
  • the thickness of the pressure-sensitive adhesive layer 20 is not particularly limited as long as it can function properly in each process in which the semiconductor processing sheet 1 is used. Specifically, the thickness is preferably 1 to 50 ⁇ m, particularly preferably 2 to 40 ⁇ m, and further preferably 3 to 30 ⁇ m.
  • the material constituting the adhesive layer 40 is not particularly limited as long as the wafer can be fixed during dicing and an adhesive layer can be formed on the separated chips. Can be used without.
  • Examples of the material constituting the adhesive layer 40 include those composed of a thermoplastic resin and a low molecular weight thermosetting adhesive component, and materials composed of a B-stage (semi-cured) thermosetting adhesive component. Used. Among these, it is preferable that the material constituting the adhesive layer 40 includes a thermoplastic resin and a thermosetting adhesive component.
  • Thermoplastic resins include (meth) acrylic copolymers, polyester resins, urethane resins, phenoxy resins, polybutene, polybutadiene, polyvinyl chloride, polyethylene terephthalate, polybutylene terephthalate, and ethylene (meth) acrylic acid copolymers.
  • examples include polymers, ethylene (meth) acrylic acid ester copolymers, polystyrene, polycarbonate, polyimide, etc.
  • (meth) acrylic copolymers from the viewpoint of adhesiveness and film-forming properties (sheet processability) Is preferred.
  • Thermosetting adhesive components include epoxy resins, polyimide resins, phenolic resins, silicone resins, cyanate resins, bismaleimide triazine resins, allylated polyphenylene ether resins (thermosetting PPE), formaldehyde resins , Unsaturated polyesters or copolymers thereof, and among them, epoxy resins are preferable from the viewpoint of adhesiveness.
  • the material constituting the adhesive layer 40 is particularly excellent in adhesiveness to a semiconductor wafer, and in particular from the viewpoint of excellent peelability from the adhesive layer 20 in the semiconductor processing sheet 1d shown in FIG. ) A material containing an acrylic copolymer and an epoxy resin is preferred.
  • the (meth) acrylic copolymer is not particularly limited, and a conventionally known (meth) acrylic copolymer can be used.
  • the weight average molecular weight (Mw) of the (meth) acrylic copolymer is preferably 10,000 to 2,000,000, and more preferably 100,000 to 1,500,000.
  • Mw of the (meth) acrylic copolymer is 10,000 or more, the peelability between the adhesive layer 40 and the pressure-sensitive adhesive layer 20 becomes better particularly in the semiconductor processing sheet 1d shown in FIG. The chip can be picked up effectively. Further, since the Mw of the (meth) acrylic copolymer is 2,000,000 or less, the adhesive layer 40 can better follow the unevenness of the adherend, and voids are generated. Can be effectively prevented.
  • the glass transition temperature (Tg) of the (meth) acrylic copolymer is preferably ⁇ 60 to 70 ° C., and more preferably ⁇ 30 to 50 ° C.
  • Tg of the (meth) acrylic copolymer is ⁇ 60 ° C. or more, the peelability between the adhesive layer 40 and the pressure-sensitive adhesive layer 20 is improved particularly in the semiconductor processing sheet 1d shown in FIG. The chip can be picked up effectively.
  • adhesive force for fixing a wafer can fully be acquired because Tg of a (meth) acrylic-type copolymer is 70 degrees C or less.
  • Examples of the monomer constituting the (meth) acrylic copolymer include a (meth) acrylic acid ester monomer or a derivative thereof, and more specifically, for example, methyl (meth) acrylate, ethyl (meth) acrylate, propyl (Meth) acrylic acid alkyl ester having 1 to 18 carbon atoms of alkyl group such as (meth) acrylate and butyl (meth) acrylate; (meth) acrylic acid cycloalkyl ester, (meth) acrylic acid benzyl ester, isobornyl ( (Meth) acrylate having a cyclic skeleton such as (meth) acrylate, dicyclopentanyl (meth) acrylate, dicyclopentenyl (meth) acrylate, dicyclopentenyloxyethyl (meth) acrylate, imide (meth) acrylate; Methyl ( Data) acrylate, 2-hydroxyethyl (meth) acryl
  • the structural unit derived from the hydroxy group-containing (meth) acrylic ester is preferably contained in the range of 1 to 20% by mass, and in the range of 3 to 15% by mass. It is more preferable that it is contained.
  • the (meth) acrylic copolymer is preferably a copolymer of a (meth) acrylic acid alkyl ester and a hydroxy group-containing (meth) acrylic ester.
  • the (meth) acrylic copolymer may be copolymerized with monomers such as vinyl acetate, acrylonitrile, and styrene within a range not to impair the object of the present invention.
  • Epoxy resins include bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenylene skeleton type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, dicyclopentadiene (DCPD) type epoxy resin, biphenyl type epoxy resin.
  • Two or more functional groups are included in the structural unit such as triphenolmethane type epoxy resin, heterocyclic type epoxy resin, stilbene type epoxy resin, condensed ring aromatic hydrocarbon modified epoxy resin, and halides thereof.
  • An epoxy resin is mentioned. These epoxy resins may be used alone or in combination of two or more.
  • the epoxy equivalent of the epoxy resin is not particularly limited.
  • the epoxy equivalent is usually preferably 150 to 1000 g / eq.
  • the epoxy equivalent in this specification is a value measured according to JIS K7236: 2009.
  • the content of the epoxy resin is preferably 1 to 1500 parts by mass and more preferably 3 to 1000 parts by mass with respect to 100 parts by mass of the (meth) acrylic copolymer. Sufficient adhesive force can be acquired because content of an epoxy resin is 1 mass part or more with respect to 100 mass parts of (meth) acrylic-type copolymers. Moreover, since the content of the epoxy resin is 1500 parts by mass or less with respect to 100 parts by mass of the (meth) acrylic copolymer, sufficient film-forming properties can be obtained, and the adhesive layer 40 can be effectively used. Can be formed.
  • the material constituting the adhesive layer 40 preferably further includes a curing agent for curing the epoxy resin.
  • the curing agent include compounds having two or more functional groups capable of reacting with an epoxy group in the molecule, and the functional groups include phenolic hydroxy groups, alcoholic hydroxy groups, amino groups, carboxy groups, and acid anhydrides. Examples include physical groups. In these, a phenolic hydroxy group, an amino group, and an acid anhydride group are preferable, and a phenolic hydroxy group and an amino group are more preferable.
  • curing agents include phenolic thermosetting agents such as novolac-type phenolic resins, dicyclopentadiene-based phenolic resins, triphenolmethane-type phenolic resins, and aralkylphenol-based resins; amines such as DICY (dicyandiamide) A thermosetting agent is mentioned.
  • curing agent may be used individually by 1 type, and may use 2 or more types together.
  • the content of the curing agent is preferably 0.1 to 500 parts by mass and more preferably 1 to 200 parts by mass with respect to 100 parts by mass of the epoxy resin. Sufficient adhesive force can be obtained because content of a hardening
  • curing agent is 0.1 mass part or more with respect to 100 mass parts of epoxy resins. Moreover, since the content of the curing agent is 500 parts by mass or less with respect to 100 parts by mass of the epoxy resin, an increase in the moisture absorption rate of the adhesive layer 40 is effectively prevented, and the reliability of the semiconductor package is further improved. It can be excellent.
  • the material constituting the adhesive layer 40 may include a curing accelerator, a coupling agent, a cross-linking agent, an energy ray curable compound, a photopolymerization initiator, a plasticizer, and a charge, as desired.
  • a curing accelerator such as an inhibitor, an antioxidant, a pigment, a dye, and an inorganic filler may be contained. Each of these additives may be included singly or in combination of two or more.
  • the curing accelerator is used to adjust the curing rate of the adhesive composition.
  • a hardening accelerator the compound which can accelerate
  • Specific examples of such compounds include tertiary amines, imidazoles such as 2-phenyl-4,5-di (hydroxymethyl) imidazole, organic phosphines, and tetraphenylboron salts.
  • the coupling agent has a function of improving the adhesiveness and adhesion to the adherend of the adhesive composition. Moreover, the water resistance of the said hardened
  • the coupling agent is preferably a compound having a group that reacts with the functional group of the (meth) acrylic polymer and the epoxy resin. As such a coupling agent, a silane coupling agent is preferable.
  • the silane coupling agent is not particularly limited, and a known silane coupling agent can be used.
  • a known silane coupling agent can be used.
  • ⁇ -glycidoxypropyltrimethoxysilane ⁇ -glycidoxypropylmethyldiethoxysilane, ⁇ - (3,4-epoxycyclohexyl) ethyltrimethoxysilane, ⁇ - (methacryloxypropyl) trimethoxysilane, ⁇ -Aminopropyltrimethoxysilane, N-6- (aminoethyl) - ⁇ -aminopropyltrimethoxysilane, N-6- (aminoethyl) - ⁇ -aminopropylmethyldiethoxysilane, N-phenyl- ⁇ -aminopropyl Trimethoxysilane, ⁇ -ureidopropyltriethoxysilane, ⁇ -mercaptopropyltrime
  • the crosslinking agent is for adjusting the cohesive force of the adhesive layer 40.
  • a crosslinking agent of the said (meth) acrylic-type polymer A well-known thing can be used, For example, what was mentioned above as a material which comprises the adhesive layer 20 can be used.
  • the energy ray curable compound is a compound that is polymerized and cured when irradiated with energy rays such as ultraviolet rays.
  • energy rays such as ultraviolet rays.
  • an acrylic compound is preferable, and a compound having at least one polymerizable double bond in the molecule is particularly preferable.
  • acrylic compounds include dicyclopentadiene dimethoxydiacrylate, trimethylolpropane triacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate.
  • the weight average molecular weight of the acrylic compound is usually 100 to 30000, preferably about 300 to 10000.
  • the content of the energy beam curable compound is usually 1 to 400 parts by mass, preferably 3 to 100 parts by mass with respect to 100 parts by mass of the (meth) acrylic polymer. 300 parts by weight, more preferably 10 to 200 parts by weight.
  • the photopolymerization initiator can reduce the polymerization curing time and the energy beam irradiation amount when polymerized and cured by irradiation with energy rays.
  • the photoinitiator A well-known thing can be used, For example, what was mentioned above as a material which comprises the adhesive layer 20 can be used.
  • the thickness of the adhesive layer 40 is usually 3 to 100 ⁇ m, preferably 5 to 80 ⁇ m.
  • the protective film forming layer 50 is preferably made of an uncured curable adhesive. In this case, after the semiconductor film or the semiconductor chip is overlaid on the protective film forming layer 50, the protective film forming layer 50 is cured, so that the protective film can be firmly bonded to the semiconductor wafer or the semiconductor chip, A durable protective film can be formed on a chip or the like.
  • the protective film forming layer 50 can be favorably printed by laser light irradiation even when the curable adhesive is uncured or after curing.
  • the protective film forming layer 50 has adhesiveness at room temperature or exhibits adhesiveness by heating. Thereby, when a semiconductor wafer, a semiconductor chip, etc. are overlap
  • the curable adhesive constituting the protective film forming layer 50 having the above characteristics contains a curable component and a binder polymer component.
  • a curable component a thermosetting component, an energy ray curable component, or a mixture thereof can be used. From the viewpoint of the curing method of the protective film forming layer 50 and the heat resistance after curing, it is particularly preferable to use a thermosetting component, and from the viewpoint of curing time, it is preferable to use an energy ray curable component.
  • thermosetting component examples include epoxy resins, phenol resins, melamine resins, urea resins, polyester resins, urethane resins, acrylic resins, polyimide resins, benzoxazine resins, and mixtures thereof. Is mentioned. Among these, an epoxy resin, a phenol resin, and a mixture thereof are preferably used. As the thermosetting component, those having a molecular weight of about 300 to 10,000 are usually used.
  • Epoxy resins have the property of forming a three-dimensional network when heated and forming a strong film.
  • an epoxy resin various known epoxy resins are used, but usually those having a weight average molecular weight of about 300 to 2500 are preferred. Further, it is preferably used in a form of blending a normal liquid epoxy resin having a weight average molecular weight of 300 to 500 and a solid epoxy resin having a weight average molecular weight of 400 to 2500, particularly a weight average of 500 to 2,000 at room temperature. .
  • the epoxy equivalent of the epoxy resin is preferably 50 to 5000 g / eq.
  • epoxy resins include glycidyl ethers of phenols such as bisphenol A, bisphenol F, resorcinol, phenyl novolac, and cresol novolac; glycidyl ethers of alcohols such as butanediol, polyethylene glycol, and polypropylene glycol.
  • Glycidyl ether of carboxylic acid such as phthalic acid, isophthalic acid, tetrahydrophthalic acid, etc .
  • glycidyl type or alkyl glycidyl type epoxy resin in which active hydrogen bonded to nitrogen atom such as aniline isocyanurate is substituted with glycidyl group vinylcyclohexane diepoxide 3,4-epoxycyclohexylmethyl-3,4-dicyclohexanecarboxylate, 2- (3,4-epoxy) cyclohexyl-5,5-spiro (3
  • 4-epoxy) cyclohexane -m- dioxane carbon in the molecule - epoxy is introduced by for example oxidation to carbon double bond include a so-called alicyclic epoxides.
  • bisphenol glycidyl type epoxy resins o-cresol novolac type epoxy resins and phenol novolac type epoxy resins are preferably used. These epoxy resins can be used alone or in combination of two or more.
  • thermally activated latent epoxy resin curing agent in combination as an auxiliary agent.
  • the thermally activated latent epoxy resin curing agent is a type of curing agent that does not react with the epoxy resin at room temperature but is activated by heating at a certain temperature or more and reacts with the epoxy resin.
  • the activation method of the thermally activated latent epoxy resin curing agent includes a method of generating active species (anions and cations) by chemical reaction by heating; There are a method of initiating a curing reaction by dissolving and dissolving with an epoxy resin; a method of starting a curing reaction by eluting at a high temperature with a molecular sieve encapsulated type curing agent; a method using a microcapsule, and the like.
  • thermally active latent epoxy resin curing agent examples include various onium salts, dibasic acid dihydrazide compounds, dicyandiamide, amine adduct curing agents, high melting point active hydrogen compounds such as imidazole compounds, and the like. These thermally activated latent epoxy resin curing agents can be used singly or in combination of two or more.
  • the thermally activated latent epoxy resin curing agent as described above is preferably 0.1 to 20 parts by weight, particularly preferably 0.2 to 10 parts by weight, and more preferably 0 to 100 parts by weight of the epoxy resin. Used at a ratio of 3 to 5 parts by mass.
  • phenolic resin a polymer having a phenolic hydroxy group such as a condensate of phenols such as alkylphenol, polyhydric phenol, naphthol and aldehydes is used without particular limitation.
  • phenol novolac resins, o-cresol novolac resins, p-cresol novolac resins, t-butylphenol novolac resins, dicyclopentadiene cresol resins, polyparavinylphenol resins, bisphenol A type novolac resins Resins or modified products thereof are used.
  • the phenolic hydroxy group contained in these phenolic resins can easily undergo an addition reaction with the epoxy group of the epoxy resin by heating to form a cured product having high impact resistance. For this reason, you may use together an epoxy resin and a phenol resin.
  • the energy ray curable component for example, those described above as the material constituting the pressure-sensitive adhesive layer 20 can be used. Moreover, you may use an energy beam curable monomer / oligomer as an energy beam curable component. Furthermore, you may use the acrylic polymer to which the energy-beam curable compound was added as a binder polymer component combined with an energy-beam curable component.
  • the binder polymer component is blended for the purpose of giving an appropriate tack to the protective film forming layer 50 or improving the operability of the semiconductor processing sheets 1c and 1e.
  • the weight average molecular weight of the binder polymer is usually in the range of 30,000 to 2,000,000, preferably 50,000 to 1,500,000, particularly preferably 100,000 to 1,000,000. When the weight average molecular weight is 30,000 or more, film formation of the protective film forming layer 50 is sufficient. Moreover, since the weight average molecular weight is 2,000,000 or less, compatibility with other components is maintained well, and the film formation of the protective film forming layer 50 can be performed uniformly.
  • Examples of such a binder polymer include (meth) acrylic copolymers, polyester resins, phenoxy resins, urethane resins, silicone resins, rubber copolymers, and the like. A copolymer is preferably used.
  • Examples of (meth) acrylic copolymers include (meth) acrylic acid ester copolymers obtained by polymerizing (meth) acrylic acid ester monomers and (meth) acrylic acid derivatives.
  • the (meth) acrylic acid ester monomer is preferably a (meth) acrylic acid alkyl ester having an alkyl group having 1 to 18 carbon atoms, such as methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) Acrylate, butyl (meth) acrylate, or the like is used.
  • Examples of the (meth) acrylic acid derivative include (meth) acrylic acid, glycidyl (meth) acrylate, hydroxyethyl (meth) acrylate, and the like.
  • thermoset when a glycidyl group is introduced into a (meth) acrylic copolymer using glycidyl methacrylate as a structural unit, the (meth) acrylic copolymer or the phenoxy resin having an epoxy group is thermoset. May have sex.
  • thermosetting polymer is not a thermosetting component in this embodiment, but corresponds to a binder polymer component.
  • the weight average molecular weight of the (meth) acrylic copolymer is preferably 100,000 or more, particularly preferably 150,000 to 1, 000,000.
  • the glass transition temperature of the (meth) acrylic copolymer is usually 20 ° C. or lower, preferably about ⁇ 70 to 0 ° C., and has adhesiveness at room temperature (23 ° C.).
  • the curable component is preferably 50 to 1500 parts by mass, particularly preferably 70 to 1000 parts by mass, further preferably 80 to 100 parts by mass of the binder polymer component. It is preferable to add ⁇ 800 parts by mass.
  • the curable component and the binder polymer component are blended in such a ratio, an adequate tack is exhibited before curing, and the sticking operation can be stably performed. After the curing, a protective film having excellent coating strength. Is obtained.
  • the protective film forming layer 50 may contain a filler and / or a colorant.
  • the protective film forming layer 50 needs to have light transmittance. Therefore, in this case, it is necessary to contain a filler and / or a colorant to such an extent that the light transmittance is not inhibited.
  • the semiconductor processing sheets 1c and 1e are used for laser printing of the protective film forming layer 50 or a protective film formed by separating the protective film forming layer 50, the protective film forming layer 50 is not required to have light transmittance.
  • the protective film forming layer 50 in order to enable laser printing, the protective film forming layer 50 needs to block the laser beam. Therefore, in order to effectively perform laser printing, the protective film forming layer 50 preferably contains a filler and / or a colorant. Moreover, when the protective film formation layer 50 contains a filler, the hardness of the protective film after curing can be maintained high, and moisture resistance can be improved. Furthermore, the gloss of the surface of the protective film to be formed can be adjusted to a desired value. Furthermore, the thermal expansion coefficient of the protective film after curing can be brought close to the thermal expansion coefficient of the semiconductor wafer, thereby reducing the warpage of the semiconductor wafer during processing.
  • the filler examples include silica such as crystalline silica, fused silica and synthetic silica, and inorganic filler such as alumina and glass balloon.
  • silica such as crystalline silica, fused silica and synthetic silica
  • inorganic filler such as alumina and glass balloon.
  • synthetic silica is preferable, and synthetic silica of the type from which ⁇ -ray sources that cause malfunction of the semiconductor device are removed as much as possible is most suitable.
  • the shape of the filler may be spherical, acicular, or indefinite.
  • a functional filler may be blended in addition to the inorganic filler.
  • a conductive filler in which gold, silver, copper, nickel, aluminum, stainless steel, carbon, ceramic, nickel, aluminum or the like is coated with silver, Examples thereof include metal materials such as gold, silver, copper, nickel, aluminum, stainless steel, silicon, and germanium, and heat conductive fillers such as alloys thereof for the purpose of imparting thermal conductivity.
  • colorant known pigments such as inorganic pigments, organic pigments, and organic dyes can be used.
  • inorganic pigments include carbon black, cobalt dyes, iron dyes, chromium dyes, titanium dyes, vanadium dyes, zirconium dyes, molybdenum dyes, ruthenium dyes, platinum dyes, ITO (indium) Tin oxide) dyes, ATO (antimony tin oxide) dyes, and the like.
  • organic pigments and organic dyes include aminium dyes, cyanine dyes, merocyanine dyes, croconium dyes, squalium dyes, azurenium dyes, polymethine dyes, naphthoquinone dyes, pyrylium dyes, and phthalocyanine dyes.
  • pigments particularly inorganic pigments.
  • inorganic pigments carbon black is particularly preferable. Carbon black is usually black, but the portion scraped off by laser light irradiation is white and the contrast difference is large, so the visibility of the laser-printed portion is very excellent.
  • the blending amount of the filler is usually preferably 40 to 80% by mass, and particularly preferably 50 to 70% by mass.
  • the blending amount of the colorant is usually preferably 0.001 to 5% by mass, particularly preferably 0.01 to 3% by mass, and further preferably 0.1 to 2.5% by mass. Preferably there is.
  • the protective film forming layer 50 may contain a coupling agent.
  • a coupling agent By containing the coupling agent, the adhesiveness / adhesion between the protective film and the semiconductor wafer, semiconductor chip, etc. can be improved without damaging the heat resistance of the protective film after the protective film forming layer 50 is cured. In addition, the water resistance (moisture heat resistance) can be improved.
  • a silane coupling agent is preferable because of its versatility and cost merit.
  • the silane coupling agent for example, those described above can be used.
  • the protective film forming layer 50 may contain a crosslinking agent such as an organic polyvalent isocyanate compound, an organic polyvalent imine compound, or an organometallic chelate compound in order to adjust the cohesive force before curing. Further, the protective film forming layer 50 may contain an antistatic agent in order to suppress static electricity and improve the reliability of the chip. Further, the protective film forming layer 50 may contain a flame retardant such as a phosphoric acid compound, a bromine compound, or a phosphorus compound in order to enhance the flame retardance performance of the protective film and improve the reliability as a package. Good.
  • a crosslinking agent such as an organic polyvalent isocyanate compound, an organic polyvalent imine compound, or an organometallic chelate compound in order to adjust the cohesive force before curing. Further, the protective film forming layer 50 may contain an antistatic agent in order to suppress static electricity and improve the reliability of the chip. Further, the protective film forming layer 50 may contain a flame retardant such as a phosphoric acid compound, a
  • the thickness of the protective film forming layer 50 is preferably 3 to 300 ⁇ m, particularly preferably 5 to 250 ⁇ m, and more preferably 7 to 200 ⁇ m in order to effectively exert the function as the protective film. It is preferable.
  • the gloss value of the first surface 501 of the protective film forming layer 50 is preferably 25 or more, and particularly preferably 30 or more.
  • the gloss value in this specification is a value measured using a gloss meter at a measurement angle of 60 ° in accordance with JIS Z8741: 1997.
  • the semiconductor processing sheet according to the present embodiment may further include a jig pressure-sensitive adhesive layer.
  • FIG. 8 shows a cross-sectional view of the semiconductor processing sheet 2 according to the second embodiment including the jig pressure-sensitive adhesive layer 60.
  • the jig adhesive layer 60 has a first surface 601 on the side proximal to the semiconductor adhesive layer 80 and a second surface 602 on the side proximal to the release film 30.
  • tool is formed in the shape corresponding to the shape of jig
  • the jig pressure-sensitive adhesive layer 60 is in contact with the first surface 301 of the release film 30 as shown in FIG. Further, as shown in FIG. 8, in the central portion of the semiconductor processing sheet 2 where the jig adhesive layer 60 does not exist, the second surface of the semiconductor adhesive layer 80 is formed on the first surface 301 of the release film 30. The surface 802 is in contact.
  • the winding pressure is concentrated at the position where the jig pressure-sensitive adhesive layer 60 is present. Along with this, blocking is also likely to occur at the position where the jig pressure-sensitive adhesive layer 60 is present.
  • the peeling force at the interface between the second surface 602 of the jig pressure-sensitive adhesive layer 60 and the first surface 301 of the peeling film 30 is defined as a peeling force ⁇ .
  • the peeling force ⁇ is 3 at 40 ° C. under predetermined conditions in a state where the second surface 602 of the adhesive layer 60 for jigs and the first surface 301 of the release film 30 are laminated.
  • peeling force of the peeling film 30 is set as the peeling force of the peeling film 30 with respect to the adhesive layer 60 for jigs after storing for days.
  • peeling force ⁇ similarly to the semiconductor processing sheet 1 according to the first embodiment described above, at the interface between the first surface 101 of the substrate 10 and the second surface 302 of the peeling film 30. Let it be peeling force.
  • the pressure-sensitive adhesive layer 60 for jigs in the present embodiment may be composed of a single layer or may be composed of two or more multilayers. In the case of multilayers, it is preferable that the core material is interposed. .
  • the adhesive constituting the jig adhesive layer 60 is preferably composed of a non-energy ray curable adhesive from the viewpoint of adhesive strength to a jig such as a ring frame.
  • a non-energy ray curable adhesive those having desired adhesive strength and removability are preferable.
  • acrylic adhesive, rubber adhesive, silicone adhesive, urethane adhesive, polyester adhesive An acrylic pressure-sensitive adhesive that can easily control the adhesive strength and removability is preferable.
  • a resin film is usually used as the core material.
  • polyvinyl chloride films such as a polyvinyl chloride film and a vinyl chloride copolymer film are preferable, and a polyvinyl chloride film is particularly preferable. Even if the polyvinyl chloride film is softened by heating, it has a property of being easily restored when cooled.
  • the thickness of the core material is preferably 2 to 200 ⁇ m, more preferably 5 to 100 ⁇ m.
  • the thickness of the pressure-sensitive adhesive layer 60 for jigs is preferably 5 to 200 ⁇ m, particularly preferably 10 to 100 ⁇ m, from the viewpoint of adhesion to a jig such as a ring frame.
  • the semiconductor processing sheet 2 having the jig adhesive layer 60 has an arithmetic average roughness Ra on the first surface 101 of the substrate 10 of 0.01 to 0.8 ⁇ m. It becomes favorable and at least the base material 10 has high light transmittance with respect to light of a desired wavelength. Furthermore, when the value ( ⁇ / ⁇ ) of the peeling force ⁇ to the peeling force ⁇ is 0 or more and less than 1.0, excellent blocking resistance is exhibited, and the semiconductor processing sheet 2 is fed from the roll. Can be carried out satisfactorily, and unintended peeling does not occur during feeding.
  • the peel force ⁇ is 10 to 1000 mN / 50 mm
  • the peel film 30 to the substrate 10 the semiconductor adhesive layer 80, and the jig adhesive can be used with an appropriate peel force.
  • the laminate including the agent layer 60 can be peeled off.
  • the semiconductor processing sheet according to the present embodiment may be in a so-called precut state in which layers other than the release film 30 are cut into a desired shape. That is, in the semiconductor processing sheet according to the present embodiment, a laminate including the substrate 10 and the semiconductor adhesive layer 80 having a shape different from that of the release film 30 in plan view is laminated on the long release film 30. It may be.
  • FIG. 9 shows a plan view of such a pre-cut semiconductor processing sheet 3 according to the third embodiment as viewed from the substrate side.
  • a laminated body hereinafter sometimes referred to as “main use part” of the base material 10 a cut into a circle and the semiconductor adhesive layer 80 a is provided on the long release film 30. Yes.
  • FIG. 10 shows a cross-sectional view along the line AA in FIG.
  • the pre-cut semiconductor processing sheet 3 also satisfies the physical properties described above for the semiconductor processing sheet 1. Moreover, as each layer which comprises the semiconductor processing sheet 3, what was mentioned above about the semiconductor processing sheet 1 can be used.
  • the semiconductor processing sheet 2 including the jig adhesive layer 60 described above can be a precut sheet.
  • the adhesive layer 60 for jigs is provided on the peripheral edge of the main use part.
  • the main use portion is peeled off from the release film 30 and then attached to a semiconductor wafer, a semiconductor chip, or the like.
  • the sheet remaining portion prevents the winding pressure when the semiconductor processing sheet 3 is rolled up from being concentrated on the main use portion.
  • the ratio value ( ⁇ / ⁇ ) of the peeling force ⁇ to the peeling force ⁇ is 0 or more and less than 1.0. The occurrence of defects is suppressed.
  • the arithmetic average roughness Ra on the first surface 101 of the substrate 10 is 0.01 to 0.8 ⁇ m, the smoothness on the surface is good, and at least the substrate 10 has a desired wavelength. It has a high light transmittance for light.
  • the peeling force ⁇ is 10 to 1000 mN / 50 mm, the release film 30 can be peeled from the semiconductor adhesive layer 80 with an appropriate peeling force when using the semiconductor processing sheet 3.
  • seat for semiconductor processing The manufacturing method of the sheet
  • a first example of the production method first, a pressure-sensitive adhesive composition containing the material of the pressure-sensitive adhesive layer 20 and, if desired, a coating composition further containing a solvent or a dispersion medium are prepared. Next, this coating composition is applied onto the first surface 301 of the release film 30 by a die coater, curtain coater, spray coater, slit coater, knife coater, or the like to form a coating film.
  • the adhesive layer 20 can be formed by drying the coating film.
  • seat 1a for semiconductor processing is obtained by bonding the 1st surface 201 of the adhesive layer 20, and the 2nd surface 102 of the base material 10.
  • the properties of the coating composition are not particularly limited as long as it can be applied.
  • the component for forming the pressure-sensitive adhesive layer 20 may be contained as a solute in the coating composition, or may be contained as a dispersoid.
  • the above drying conditions may be changed or heat treatment may be performed in order to form a crosslinked structure at a desired density. It may be provided separately.
  • the obtained semiconductor processing sheet 1a is placed in an environment of, for example, 23 ° C. and a relative humidity of 50%. Caring for a few days.
  • the coating composition is applied onto the second surface 102 of the substrate 10 to form a coating film.
  • the said coating film is dried and the laminated body which consists of the base material 10 and the adhesive layer 20 is formed.
  • seat 1a for semiconductor processing is obtained by bonding the 2nd surface 202 of the adhesive layer 20 in this laminated body, and the 1st surface 301 of the peeling film 30.
  • the manufacturing method of the semiconductor processing sheet 1b including the adhesive layer 40 is not particularly limited, and a conventional method can be used. For example, by applying an adhesive composition including the material of the adhesive layer 40 and, if desired, a coating composition further containing a solvent or a dispersion medium onto the first surface 301 of the release film 30 and drying it. An adhesive layer 40 is formed. Then, the sheet
  • the manufacturing method of the semiconductor processing sheet 1c including the protective film forming layer 50 can be manufactured with reference to the manufacturing method of the semiconductor processing sheet 1b described above.
  • the semiconductor processing sheet is obtained by replacing the adhesive composition containing the material of the adhesive layer 40 with the protective film forming layer composition containing the material of the protective film forming layer 50. 1c can be obtained.
  • the manufacturing method of the semiconductor processing sheet 1d including the pressure-sensitive adhesive layer 20 and the adhesive layer 40 is not particularly limited, and a conventional method can be used. For example, by applying an adhesive composition including the material of the adhesive layer 40 and, if desired, a coating composition further containing a solvent or a dispersion medium onto the first surface 301 of the release film 30 and drying it. An adhesive layer 40 is formed. Thereby, the laminated body of the peeling film 30 and the adhesive bond layer 40 is obtained. Next, the release film 30 is peeled from the semiconductor processing sheet 1a prepared in advance, and the exposed adhesive layer 20 side surface and the adhesive layer 40 side surface of the laminate are bonded to each other. Sheet 1d is obtained.
  • the semiconductor processing sheet 1e including the pressure-sensitive adhesive layer 20 and the protective film forming layer 50 can be manufactured with reference to the manufacturing method of the semiconductor processing sheet 1d described above.
  • the adhesive composition containing the material of the adhesive layer 40 is replaced with the protective film forming layer composition containing the material of the protective film forming layer 50, thereby providing the semiconductor processing sheet. 1e can be obtained.
  • the semiconductor processing sheet 2 including the jig pressure-sensitive adhesive layer 60 can be manufactured by a conventional method. For example, semiconductor processing is performed by laminating a pressure-sensitive adhesive layer 60 for jigs formed in a desired shape on a surface opposite to the substrate 10 in a laminate including the substrate 10 and the semiconductor adhesive layer 80 and the like. Sheet 2 can be manufactured.
  • the semiconductor processing sheet 2 including the jig pressure-sensitive adhesive layer 60 is a pre-cut sheet, it can be manufactured as follows, for example. First, the adhesive for jigs for forming the adhesive layer 60 for jigs is formed in a sheet form on the peeling surface of the release film 30. Next, in this sheet-shaped jig pressure-sensitive adhesive, the part that becomes the inner peripheral edge of the jig pressure-sensitive adhesive layer 60 is cut (half-cut) with the release film 30 being left, Remove the inner circular part.
  • the base material 10 and the semiconductor adhesive layer 80 prepared separately are prepared on the sheet-like jig pressure-sensitive adhesive side surface of the laminate comprising the sheet-like jig pressure-sensitive adhesive and the release film 30 after the circular portion is removed. It is affixed on the surface of the laminated body consisting of Thereby, the laminated body by which the peeling film 30, the adhesive for sheet-like jig
  • tool is cut
  • the adhesive for sheet-like jigs becomes an annular adhesive layer 60 for jigs.
  • the remaining sheet portion can be formed by appropriately half-cutting the position other than the portion to be the main use portion.
  • the method for producing the precut semiconductor processing sheet 3 is not particularly limited, and a conventional method can be used.
  • the semiconductor processing sheets 1, 2, and 3 according to this embodiment can be used as a back grind sheet, a dicing sheet, or the like.
  • dicing can be performed by irradiating a laser from the back of the sheet.
  • the shape of the wafer or chip can be inspected via the semiconductor processing sheets 1, 2, and 3 according to the present embodiment.
  • laser printing can also be performed on the back surface of a wafer or a chip via the semiconductor processing sheet according to the present embodiment.
  • the semiconductor processing sheets 1b and 1d including the adhesive layer 40 can be used as a dicing die bonding sheet. That is, the wafer is diced on the semiconductor processing sheets 1b and 1d, and the chip obtained by picking up the obtained chip after performing an expanding process as necessary can be obtained as a chip with an adhesive layer. it can. Further, by using the semiconductor processing sheets 1c and 1e including the protective film forming layer 50, a protective film can be formed on the back surface of the chip. In this case, a wafer is stuck on the semiconductor processing sheets 1c and 1e including the protective film forming layer 50, and the protective film forming layer 50 is cured. Subsequently, the wafer is diced on the semiconductor processing sheets 1c and 1e, and an expanding process is performed as necessary. Thereafter, by picking up the obtained chip, a chip having a protective film formed on the back surface can be obtained.
  • the semiconductor processing sheets 1, 2, and 3 according to this embodiment can be wound into a roll for storage or the like. Even when the semiconductor processing sheets 1, 2, 3 according to this embodiment are wound in this way, the ratio value ( ⁇ / ⁇ ) of the peeling force ⁇ to the peeling force ⁇ is 0 as described above. As mentioned above, since it is less than 1.0, the adhesiveness of the semiconductor processing sheets 1, 2, 3 according to this embodiment is between the layers constituting the semiconductor processing sheets 1, 2, 3 according to this embodiment. It does not become higher than adhesion. For this reason, excellent blocking resistance is exhibited, the semiconductor processing sheets 1, 2, 3 according to the present embodiment can be fed out from the rolls satisfactorily. Peeling can be suppressed.
  • the arithmetic average roughness Ra on the first surface of the base material 10 is 0.01 to 0.8 ⁇ m, the smoothness on the surface becomes good, and the base material 10 is resistant to light of a desired wavelength. High light transmittance. As a result, laser dicing, inspection, and laser printing from the back surface as described above can be performed satisfactorily.
  • the peeling force ⁇ is 10 to 1000 mN / 50 mm, when the wafer is attached to the semiconductor processing sheets 1, 2, 3 according to this embodiment, the peeling film 30 can be removed from the release film 30 with an appropriate peeling force.
  • the laminate including the material 10 and the semiconductor adhesive layer 80 can be peeled off.
  • another layer may be interposed between the base material 10 and the semiconductor adhesive layer 80 in the semiconductor processing sheets 1, 2, and 3 according to the present embodiment.
  • Example 1 Production of base material As a base material, a polyvinyl chloride film was produced by a calendering method.
  • the polyvinyl chloride film has an arithmetic average roughness Ra of the first surface of 0.03 ⁇ m, and a tensile elastic modulus (Young's modulus) in the MD direction at 23 ° C. measured in accordance with JIS K7161: 1994 is 250 MPa. And the thickness was 80 ⁇ m.
  • the arithmetic average roughness Ra in this example was measured at 10 points in-plane according to JIS B0601: 2013 using a tactile surface roughness meter (“SURFTESTTESV-3000” manufactured by Mitsutoyo). The average value is calculated.
  • the substrate alone was evaluated for the transparency of the printing laser beam (wavelength: 532 nm), the transparency of the stealth dicing laser beam (wavelength: 1600 nm), and the transparency of the inspection infrared ray (wavelength: 1069 nm). However, in all cases, excellent permeability was shown.
  • a release film (product name “SP-PMF381031H”, manufactured by Lintec Co., Ltd., thickness) of one side (first side) of a polyethylene terephthalate film with a silicone release agent, thickness: 38 ⁇ m ) was used.
  • the arithmetic average roughness Ra of the first surface of the release film was 0.03 ⁇ m, and the arithmetic average roughness Ra of the second surface was 0.3 ⁇ m.
  • Example 2 (1) Production of base material As a base material, an ethylene-methacrylic acid copolymer film was produced by a T-die film forming method.
  • the ethylene-methacrylic acid copolymer film has an arithmetic average roughness Ra of the first surface of 0.05 ⁇ m, and a tensile modulus (Young's modulus) in the MD direction at 23 ° C. measured according to JIS K7161: 1994. ) was 130 MPa and the thickness was 80 ⁇ m.
  • permeability of the laser beam for printing (wavelength: 532 nm)
  • permeability of the laser beam for stealth dicing (wavelength: 1600 nm)
  • permeability of the infrared rays for inspection (wavelength: 1069 nm) were evaluated.
  • excellent permeability was shown.
  • Example 3 Preparation of base material As a base material, an ethylene-vinyl acetate copolymer film was prepared by a T-die film forming method.
  • the ethylene-vinyl acetate copolymer film has an arithmetic average roughness Ra of the first surface of 0.06 ⁇ m, and a tensile modulus (Young's modulus) in the MD direction at 23 ° C. measured according to JIS K7161: 1994. ) was 75 MPa, and the thickness was 100 ⁇ m.
  • permeability of the laser beam for printing (wavelength: 532 nm)
  • permeability of the laser beam for stealth dicing (wavelength: 1600 nm)
  • permeability of the infrared rays for inspection (wavelength: 1069 nm) were evaluated.
  • excellent permeability was shown.
  • a semiconductor was prepared in the same manner as in Example 1 except that the base material made of an ethylene-vinyl acetate copolymer and the pressure-sensitive adhesive composition (III) were used as described above.
  • a processing sheet was prepared.
  • Example 4 Production of base material A polypropylene film was produced as a base material by a T-die film forming method.
  • the arithmetic average roughness Ra of the first surface is 0.3 ⁇ m
  • the tensile elastic modulus (Young's modulus) in the MD direction at 23 ° C. measured according to JIS K7161: 1994 is 360 MPa.
  • the thickness was 100 ⁇ m.
  • permeability of the laser beam for printing (wavelength: 532 nm)
  • permeability of the laser beam for stealth dicing (wavelength: 1600 nm)
  • permeability of the infrared rays for inspection (wavelength: 1069 nm) were evaluated.
  • excellent permeability was shown.
  • Example 5 Preparation of release film A release film (product name “SP-PET381031”, thickness: 38 ⁇ m, manufactured by Lintec Co., Ltd.) having one surface (first surface) of a polyethylene terephthalate film peel-treated with a silicone-based release agent The other surface (second surface) was stripped using an alkyd stripper.
  • As the alkyd release agent an alkyd release agent layer in a release film (product name “SP-PET38AL-5” manufactured by Lintec Corporation) in which an alkyd release agent layer is provided on one side of a 38 ⁇ m thick polyethylene terephthalate film. An alkyd release agent for forming the film was used.
  • a release film was obtained in which the first surface was peeled with a silicone release agent and the second surface was peeled with an alkyd release agent.
  • the arithmetic average roughness Ra of the first surface of the release film was 0.03 ⁇ m
  • the arithmetic average roughness Ra of the second surface was 0.03 ⁇ m.
  • Example 6 The first surface prepared in Example 5 was subjected to a release treatment with a silicone release agent, and the second surface was subjected to semiconductor processing in the same manner as in Example 2 except that a release film subjected to an release treatment with an alkyd release agent was used. A sheet was prepared.
  • Example 7 (1) Production of release film A release film (product name “SP-PET382150”, manufactured by Lintec Co., Ltd., thickness: 38 ⁇ m) obtained by removing one surface (first surface) of a polyethylene terephthalate film with a silicone-based release agent. The other surface (second surface) was stripped using the same alkyd stripper as used in Example 6. As a result, a release film was obtained in which the first surface was peeled with a silicone release agent and the second surface was peeled with an alkyd release agent. The arithmetic average roughness Ra of the first surface of the release film was 0.03 ⁇ m, and the arithmetic average roughness Ra of the second surface was 0.03 ⁇ m.
  • Example 8 (1) Preparation of Release Film As a release film, a release film obtained by releasing one side (first side) of a polyethylene terephthalate film with a silicone release agent (product name “SP-PET301031”, manufactured by Lintec Corporation), thickness: 30 ⁇ m ) was used. The arithmetic average roughness Ra of the first surface of the release film was 0.03 ⁇ m, and the arithmetic average roughness Ra of the second surface was 0.3 ⁇ m.
  • a silicone release agent product name “SP-PET301031”, manufactured by Lintec Corporation
  • Example 9 (1) Preparation of Release Film As a release film, a release film (product name “SP-PET501031”, manufactured by Lintec Co., Ltd., one side) of a polyethylene terephthalate film with a silicone release agent, thickness: 50 ⁇ m ) The arithmetic average roughness Ra of the first surface of the release film was 0.03 ⁇ m, and the arithmetic average roughness Ra of the second surface was 0.3 ⁇ m.
  • Example 10 Production of first laminate including adhesive layer After obtaining the adhesive composition by mixing the following acrylic polymer, thermosetting resin, filler, silane coupling agent and cross-linking agent, solid content It diluted with methyl ethyl ketone so that a density
  • Acrylic polymer 100 parts by mass of a copolymer (Mw: 500,000, Mw / Mn: 2.9, Tg: 9 ° C.) consisting of 95 parts by mass of methyl acrylate and 5 parts by mass of 2-hydroxyethyl acrylate resin: 30 parts by mass of acryloyl group-added cresol novolak type epoxy resin (Nippon Kayaku Co., Ltd., product name “CNA-147”)
  • Thermosetting agent Aralkylphenol resin (Mitsui Chemicals Co., Ltd., product name “Mirex XLC-4L”) 6 parts by mass
  • Filler 35 mass parts of silica filler modified with methacryloxy group (average particle size 0.05 ⁇ m, manufactured by Admatechs, treated with 3-methacryloxypropyltrimethoxysilane)
  • Silane coupling agent (manufactured by Mitsubishi Chemical Corporation, 0.5 parts by mass of product name “MKC silicate MSEP2”) 1.5 parts by mass of crosslinking agent
  • a first release film (product name “SP-PET 381031”, thickness: 38 ⁇ m, manufactured by Lintec Co., Ltd.) having a silicone release agent layer formed on one side of a polyethylene terephthalate (PET) film, and one side of the PET film
  • a second release film (product name “SP-PET381130”, manufactured by Lintec Corporation, thickness: 38 ⁇ m) formed with a silicone release agent layer was prepared.
  • the coating solution of the adhesive composition described above is applied using a knife coater, dried, and 5 ⁇ m thick on the release surface of the first release film.
  • the adhesive layer was formed.
  • the release surface of the second release film is laminated on the adhesive layer and bonded together, and the first release film, the adhesive layer (thickness: 5 ⁇ m), and the first release film comprising the second release film.
  • a laminate was obtained.
  • the first laminate was cured for 7 days in an environment of a temperature of 23 ° C. and a relative humidity of 50%.
  • Adhesive main agent (meth) acrylic acid ester copolymer (manufactured by Nippon Synthetic Chemical Industry Co., Ltd., obtained by copolymerizing 60 parts by mass of 2-ethylhexyl acrylate, 30 parts by mass of methyl methacrylate and 10 parts by mass of 2-hydroxyethyl acrylate) Copolymer, weight average molecular weight: 600,000) 100 parts by mass
  • Crosslinking agent Trimethylolpropane xylene diisocyanate adduct (product name “Takenate D110N”, manufactured by Mitsui Takeda Chemical Co., Ltd.) 20 parts by mass
  • a release film having a silicone release agent layer formed on one side of a PET film (product name “SP-PET381031”, thickness: 38 ⁇ m, manufactured by Lintec Corporation) was prepared.
  • a polypropylene film was used as a base material.
  • the arithmetic average roughness Ra of the first surface was 0.3 ⁇ m and the thickness was 100 ⁇ m.
  • the above-mentioned pressure-sensitive adhesive composition (V) coating solution is applied onto the release surface of the third release film using a knife coater and dried, and the crosslinking reaction is allowed to proceed, whereby the third release film.
  • the laminated body which consists of a 5-micrometer-thick adhesive layer was obtained.
  • the 2nd surface of the said base material is bonded to the surface on the opposite side to the 3rd peeling film of an adhesive layer, and the 2nd which consists of a base material, an adhesive layer, and a 3rd peeling film.
  • a laminate was obtained. This was cured for 7 days in an environment of a temperature of 23 ° C. and a relative humidity of 50%.
  • Adhesive main agent (meth) acrylic acid ester copolymer (copolymer obtained by copolymerizing 69.5 parts by mass of butyl acrylate, 30 parts by mass of methyl acrylate and 0.5 parts by mass of 2-hydroxyethyl acrylate, weight Average molecular weight: 500,000) 100 parts by mass
  • Crosslinking agent 5 parts by mass of aromatic polyisocyanate (manufactured by Tosoh Corporation, product name “Coronate L”)
  • Fourth and fifth release films (product name “SP-PET 381031”, thickness: 38 ⁇ m, manufactured by Lintec Corporation) having a silicone release agent layer formed on one side of a PET film, and polychlorinated as a core material
  • a vinyl film manufactured by Okamoto Co., Ltd., thickness: 50 ⁇ m was prepared.
  • the application solution of the pressure-sensitive adhesive composition for jig described above is applied using a knife coater, dried, and on the release surface of the fourth release film, A first pressure-sensitive adhesive layer having a thickness of 5 ⁇ m was formed. Then, the said core material was bonded to the 1st adhesive layer, and the laminated body A which consists of a core material, a 1st adhesive layer, and a 4th peeling film was obtained.
  • the application solution of the pressure-sensitive adhesive composition for jig is applied using a knife coater, dried, and on the release surface of the fifth release film, A second pressure-sensitive adhesive layer having a thickness of 5 ⁇ m was formed. Thereafter, the exposed surface of the core material in the laminate A is bonded to the second pressure-sensitive adhesive layer, and the fourth release film / first pressure-sensitive adhesive layer / core material / second pressure-sensitive adhesive layer / fifth.
  • a third laminate comprising a release film was obtained. Thereafter, the third laminate was cured for 7 days in an environment of a temperature of 23 ° C. and a relative humidity of 50%.
  • the first pressure-sensitive adhesive layer, the core material, and the second pressure-sensitive adhesive layer constitute a jig pressure-sensitive adhesive layer having a thickness of 60 ⁇ m.
  • the first release film is peeled from the fourth laminate obtained in (4) above, and the exposed adhesive layer and the adhesive layer for jig exposed in the third laminate are superposed. And crimped. Then, leaving the 4th peeling film in a 3rd laminated body, the part used as the outer periphery of the sheet
  • the pressure-sensitive adhesive layer (thickness: 5 ⁇ m), the adhesive layer laminated on the side opposite to the base material in the pressure-sensitive adhesive layer, and the pressure-sensitive adhesive layer in the adhesive layer
  • a semiconductor processing sheet comprising: an annular adhesive layer for jigs laminated on the opposite peripheral edge; and a fourth release film laminated on the opposite side of the adhesive layer in the adhesive layer for jigs Obtained.
  • the arithmetic average roughness Ra of the surface (first surface) on the side of the adhesive layer for jigs in the fourth release film is 0.03 ⁇ m, and the surface opposite to the first surface (first surface) 2), the arithmetic average roughness Ra was 0.3 ⁇ m.
  • Example 11 Production of first laminate including protective film forming layer The following binder polymer, thermosetting resin, thermoactive latent epoxy resin curing agent, curing accelerator, filler, colorant and silane coupling agent are mixed. Then, after obtaining the protective film forming layer composition, it was diluted with methyl ethyl ketone so that the solid content concentration was 50% by mass to prepare a coating solution for the protective film forming layer composition.
  • Binder polymer (meth) acrylic acid ester copolymer (copolymer obtained by copolymerizing 10 parts by mass of n-butyl acrylate, 70 parts by mass of methyl acrylate, 5 parts by mass of glycidyl methacrylate, and 15 parts by mass of 2-hydroxyethyl acrylate) 150 parts by mass of thermosetting component: polymer, weight average molecular weight: 800,000, glass transition temperature: ⁇ 1 ° C.
  • Bisphenol A type epoxy resin (Mitsubishi Chemical Corporation, product name “jER828”, epoxy equivalent 184 to 194 g / eq) 60 parts by mass Bisphenol A type epoxy resin (Mitsubishi Chemical Corporation, product name “jER1055”, epoxy equivalent 800 to 900 g) / Eq) 10 parts by weight Dicyclopentadiene type epoxy resin (manufactured by Dainippon Ink and Chemicals, product name “Epiclon HP-7200HH”, epoxy equivalent 255-260 g / eq) 30 parts by weight
  • Thermally active latent epoxy resin curing agent Dicyandiamide (manufactured by ADEKA, product name “Adeka-Donor EH3636AS”, active hydrogen content 21 g / eq) 2 parts by mass Curing accelerator: 2-phenyl-4,5-dihydroxymethylimidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., product name “Cureazole 2PHZ”) 2 parts by mass
  • a first release film (product name “SP-PET 381031”, thickness: 38 ⁇ m, manufactured by Lintec Co., Ltd.) having a silicone release agent layer formed on one side of a polyethylene terephthalate (PET) film, and one side of the PET film
  • a second release film (product name “SP-PET381130”, manufactured by Lintec Corporation, thickness: 38 ⁇ m) formed with a silicone release agent layer was prepared.
  • the coating solution of the protective film forming layer composition described above is applied using a knife coater, dried, and thickened on the release surface of the first release film.
  • a protective film forming layer having a thickness of 25 ⁇ m was formed.
  • the release surface of the second release film is laminated on the protective film forming layer and bonded together, and consists of the first release film, the protective film forming layer (thickness: 25 ⁇ m), and the second release film.
  • a first laminate was obtained. This first laminate was cured for 7 days in an environment of a temperature of 23 ° C. and a relative humidity of 50%.
  • Example 12 (1) Preparation of pressure-sensitive adhesive composition (VI) 68.5 parts by mass of butyl acrylate, 30 parts by mass of methacrylic acid, 0.5 parts by mass of 2-hydroxyethyl acrylate, and 1 part by mass of acrylamide were copolymerized. An acrylic copolymer having a weight average molecular weight of 620,000 was obtained.
  • Example 1 Except for using a release film (product name “SP-PET 381031”, thickness: 38 ⁇ m) manufactured by Lintec Co., Ltd.) on which one surface (first surface) of a polyethylene terephthalate film is treated with a silicone-based release agent, as a release film.
  • a semiconductor processing sheet was produced in the same manner as in Example 1.
  • arithmetic mean roughness Ra of the 1st surface of the said peeling film was 0.03 micrometer
  • arithmetic mean roughness Ra of the other surface (2nd surface) was 0.05 micrometer.
  • Example 2 Except for using a release film (product name “SP-PET 381031”, thickness: 38 ⁇ m) manufactured by Lintec Co., Ltd.) on which one surface (first surface) of a polyethylene terephthalate film is treated with a silicone-based release agent, as a release film.
  • a semiconductor processing sheet was produced in the same manner as in Example 3.
  • arithmetic mean roughness Ra of the 1st surface of the said peeling film was 0.03 micrometer
  • arithmetic mean roughness Ra of the other surface (2nd surface) was 0.05 micrometer.
  • Example 3 Except for using a release film made of polyethylene terephthalate film (product name “Diafoil (registered trademark) T-100 38”, thickness: 38 ⁇ m, manufactured by Mitsubishi Plastics, Inc.) for semiconductor processing as in Example 2. A sheet was produced. The arithmetic average roughness Ra on both surfaces of the release film was 0.05 ⁇ m.
  • a release film made of polyethylene terephthalate film product name “Diafoil (registered trademark) T-100 38”, thickness: 38 ⁇ m, manufactured by Mitsubishi Plastics, Inc.
  • Test Example 2 (Measurement of peel force ⁇ )
  • a laminate composed of 10 semiconductor processing sheets was prepared and stored at 40 ° C. for 3 days.
  • One sheet for semiconductor processing is taken out from this laminate, and the first surface of the base material is bonded to a stainless steel plate using a double-sided adhesive tape, and a universal tensile testing machine (product name: Tensilon UTM, manufactured by Orientec Co., Ltd.). -4-100). Thereafter, only the release film was peeled in the 180 ° direction at a tensile speed of 300 mm / min under the conditions of a temperature of 23 ° C. and a relative humidity of 50% RH.
  • the roll-shaped semiconductor processing sheet thus obtained was stored for 3 days in a moist heat accelerator (manufactured by ESPEC, product name “SH641”) set to a dry state at 40 ° C.
  • the semiconductor processing sheet was When the energy ray-curable material was included, the laminate was stored in a state where it was shielded from light.
  • the semiconductor processing sheet wound up into a roll was fed out using a wafer mounter (product name “RAD-2500m / 8” manufactured by Lintec Corporation). And the area
  • Test Example 4 (Mount evaluation) In the same manner as in Test Example 3, a roll-shaped semiconductor processing sheet was prepared and stored at 40 ° C. for 3 days. Then, using a wafer mounter (product name “RAD-2500m / 8” manufactured by Lintec Corporation), the main use part was peeled off from the release film of this roll, and the main use part was attached (mounted) to the semiconductor wafer. . This operation was repeated 20 times continuously, and when it was successfully completed, it was evaluated as “good”. On the other hand, when a defect occurred in the mount due to defective peeling of the main use part from the release film, it was evaluated as x. The results are shown in Table 2.
  • Table 1 summarizes the configurations of the semiconductor processing sheets produced in the examples and comparative examples. The details of the abbreviations listed in Table 1 are as follows.
  • Base material -PVC: polyvinyl chloride-EMAA: ethylene-methacrylic acid copolymer-EVA: ethylene-vinyl acetate copolymer-PP: polypropylene [release film]
  • PET Polyethylene terephthalate
  • Test Example 5 Evaluation of light transmittance
  • a wafer mounter product name “RAD-2500m / 8”
  • DISCO product name “DFD-651”
  • Dicing conditions ⁇ Work (object to be cut): Silicon wafer (size: 6 inches, thickness: 350 ⁇ m, sticking surface: mirror) ⁇ Dicing blade: manufactured by Disco Corporation, product name “27HECC” ⁇ Blade rotation speed: 30,000rpm ⁇ Dicing speed: 10 mm / second ⁇ Cutting depth: Cutting from the surface of the substrate opposite to the dicing machine table to a depth of 20 ⁇ m ⁇ Dicing size: 5 mm ⁇ 5 mm
  • the semiconductor processing sheets of the examples were excellent in light transmittance, and excellent evaluation was obtained in both feeding from the roll and mounting.
  • the semiconductor processing sheet of the comparative example a problem occurred in either the feeding from the roll or the mounting.
  • the semiconductor processing sheet according to the present invention is suitably used as, for example, a dicing sheet, a dicing die bonding sheet, a protective film forming layer integrated dicing sheet, or the like.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Adhesive Tapes (AREA)

Abstract

La feuille de traitement de semi-conducteur selon la présente invention comprend au moins un substrat (10), une couche de liaison de semi-conducteur (80) et un film de pelage (30) : une première surface (101) du substrat (10) présentant une rugosité arithmétique moyenne Ra de 0,01 à 0,8 µm ; et si α est défini comme la force de pelage à l'interface entre la première surface (101) du substrat (10) et une seconde surface (302) du film de pelage (30) et β est défini comme la force de pelage à l'interface entre une seconde surface (802) de la couche de liaison de semi-conducteur (80) et une première surface (301) du film de pelage (30), la valeur (α/β) du rapport de α sur β étant de 0 ou plus à moins de 1,0, et la force de pelage β étant de 10 à 1000 mN/50 mm. Cette feuille de traitement de semi-conducteur offre une excellente transmission de la lumière, et un blocage est moins susceptible de se produire.
PCT/JP2017/000186 2016-03-04 2017-01-05 Feuille de traitement de semi-conducteur WO2017149925A1 (fr)

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JP2020164664A (ja) * 2019-03-29 2020-10-08 リンテック株式会社 粘着フィルム
WO2021199798A1 (fr) * 2020-03-31 2021-10-07 東洋紡株式会社 Stratifié à base d'un substrat inorganique/film plastique technique équipé d'un film protecteur, empilement stratifié, procédé de stockage de stratifié, et procédé de transport de stratifié

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JPWO2017149925A1 (ja) 2018-12-27
CN108271381B (zh) 2022-06-07

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