WO2017130809A1 - エピタキシャル成長装置及び保持部材 - Google Patents

エピタキシャル成長装置及び保持部材 Download PDF

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Publication number
WO2017130809A1
WO2017130809A1 PCT/JP2017/001501 JP2017001501W WO2017130809A1 WO 2017130809 A1 WO2017130809 A1 WO 2017130809A1 JP 2017001501 W JP2017001501 W JP 2017001501W WO 2017130809 A1 WO2017130809 A1 WO 2017130809A1
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Prior art keywords
hole
susceptor
lift pin
growth apparatus
substrate
Prior art date
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PCT/JP2017/001501
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English (en)
French (fr)
Japanese (ja)
Inventor
武史 小林
Original Assignee
信越半導体株式会社
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Publication date
Application filed by 信越半導体株式会社 filed Critical 信越半導体株式会社
Priority to CN201780005034.1A priority Critical patent/CN108604539B/zh
Priority to KR1020187015504A priority patent/KR102402754B1/ko
Publication of WO2017130809A1 publication Critical patent/WO2017130809A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

Definitions

  • the present invention relates to an epitaxial growth apparatus and a holding member.
  • a typical single wafer epitaxial growth apparatus includes, for example, a reaction furnace in which a graphite-made susceptor coated with silicon carbide and a quartz support shaft that supports the susceptor are arranged. .
  • the susceptor in the reaction furnace has a pocket portion on which the substrate is placed, and a through hole that penetrates the front and back surfaces of the pocket portion.
  • the support shaft has a support column extending from the lower side of the susceptor toward the back surface of the susceptor, and an arm unit extending from the upper end of the support column and connecting to the back surface of the susceptor so as to cross under the through hole of the susceptor. Is provided.
  • a through-hole penetrating the arm portion in the same direction as the through-hole of the susceptor is formed below the through-hole of the susceptor.
  • a lift pin that moves up and down when the substrate is transferred between the susceptor and the arm portion is inserted into the through hole formed in the susceptor and the arm portion, and the inclination of the lift pin that moves up and down is determined by these two through holes.
  • the susceptor made of graphite
  • the support shaft made of quartz
  • the susceptor made of graphite
  • the support shaft made of quartz
  • the temperature in the reaction furnace becomes unstable due to the substrate at room temperature being carried into the high temperature reaction furnace, and the positional relationship between the through hole of the susceptor and the through hole of the support shaft is Change.
  • the inclination of the lift pin defined by these two through holes becomes unstable, and the position of the substrate placed in the pocket portion by the lift pin varies. Therefore, a gap (gap between the substrate and the pocket portion) formed in the circumferential direction of the substrate placed in the pocket portion is not uniform in the circumferential direction of the substrate.
  • the position at which the robot that transports the substrate above the susceptor in order to pass the substrate to the lift pins stops above the susceptor is adjusted based on the position of the substrate previously placed in the pocket portion.
  • the position of the substrate placed in the pocket portion varies greatly for each substrate. Therefore, even if the position of the robot is adjusted based on the position of the substrate placed last time, variation in the position of the substrate placed in the pocket portion cannot be sufficiently suppressed.
  • Patent Document 1 discloses a method for suppressing a change in the positional relationship between an arm portion (support shaft) and a through-hole of a susceptor based on a difference in thermal expansion coefficient between a quartz support shaft and a graphite susceptor. ing.
  • a lift ring which is an arcuate plate member, is used to transport a substrate to a pocket portion, and the lift ring is moved up and down via lift pins.
  • the lift pin fits its tip to the lower surface of the lift ring and is inserted into the through hole of the susceptor and the arm to suppress wobbling when the lift pin moves up and down.
  • the through hole of the susceptor is formed as a long hole extending in the radial direction of the susceptor, thereby preventing the lift pin from being strongly pressed against the through hole due to the difference in thermal expansion coefficient between the graphite susceptor and the quartz arm portion.
  • the through hole of the susceptor is formed as a long hole extending in the radial direction of the susceptor, thereby preventing the lift pin from being strongly pressed against the through hole due to the difference in thermal expansion coefficient between the graphite susceptor and the quartz arm portion.
  • the through hole of the susceptor is formed as a long hole extending in the radial direction of the susceptor, thereby preventing the lift pin from being strongly pressed against the through hole due to the difference in thermal expansion coefficient between the graphite susceptor and the quartz arm portion.
  • the through hole of the susceptor is formed as a long hole extending in the radial direction of the susceptor, thereby preventing the lift pin from being strongly pressed against the through hole due to
  • Patent Document 2 discloses a method of connecting a plurality of lift pins to each other with an auxiliary member in order to stabilize the wobbling of the lift pins that move up and down (the tilt of the lift pins).
  • patent document 2 while forming a screw thread in the side surface of a lift pin, while forming the through-hole which inserts a lift pin in an auxiliary member, a thread groove is formed in the internal peripheral surface of the through-hole. Then, the lift pins inserted into the through holes of the auxiliary member are rotated relative to the auxiliary member to connect the lift pins and the auxiliary member, thereby connecting the plurality of lift pins to each other by the auxiliary member and stabilizing the wobble of the lift pins.
  • An object of the present invention is to provide an epitaxial growth apparatus having a holding member capable of holding the lift pin while maintaining the positional relationship with the lift pin, and the holding member.
  • the epitaxial growth apparatus of the present invention is A susceptor having a through-hole penetrating the front and back and rotatable about an axis; Lift pins inserted into the through holes; A holding member having a ring part positioned around the axis, and an elastic member including a connection part connected to the ring part and extending from the connection part along the ring part and biasing the connection part as a base point toward the ring part; With The holding member is characterized by holding a lift pin between the ring portion and the elastic member.
  • the lift pin is sandwiched and held between the elastic member and the ring portion by the biasing force of the elastic member. Since the lift pin is held using the urging force of the elastic member, the holding member that holds the lift pin (ring part and elastic member) and the force that the holding member holds the lift pin even if the lift pin repeats thermal expansion and thermal contraction It does not loosen greatly. Therefore, the holding member can hold the lift pin while maintaining the position for holding the lift pin for a long time.
  • a plurality of through holes are formed around the axis, lift pins are inserted into the plurality of through holes, and the plurality of lift pins are held by the holding member.
  • a plurality of lift pins can be held by the holding member, and the lift pins can be prevented from wobbling.
  • the through-hole of the susceptor is a first through-hole, and has a support portion that supports the susceptor by having an arm portion that is connected to the susceptor and crosses under the first through-hole.
  • the arm portion has one end portion located below the susceptor and the other end portion connected to the susceptor, and the support portion extends in the axial direction, and the upper end portion connects to the one end portion.
  • the holding member is positioned around the support column.
  • the holding member is located entirely below the arm portion. Therefore, the interval between the holding member and the susceptor can be widened, and the adverse effect of the holding member on the temperature distribution of the substrate placed on the susceptor can be reduced.
  • the lift pin has an upper portion that can be hooked in the first through hole, and the lift pin is held by the susceptor by the upper portion being hooked in the first through hole.
  • the upper part can be hooked on the susceptor so as to close the first through hole, and the lift pin is held on the susceptor in a state where the upper part is hooked on the first through hole to close the first through hole. Is done.
  • the susceptor is made of graphite, silicon carbide, or graphite coated with silicon carbide, and the holding member is made of silicon carbide.
  • the difference in thermal expansion coefficient between the susceptor having the first through hole into which the lift pin is inserted and the holding member that holds the lift pin inserted into the first through hole can be reduced or the thermal expansion coefficient can be made the same. . Therefore, it can suppress that the inclination of a lift pin becomes unstable because the positional relationship of a 1st through-hole and a holding member changes a lot.
  • the elastic member is a plate-like member including a connection portion.
  • the lift pin can be held with a simple structure.
  • the ring portion is formed in a circular shape or a substantially circular shape.
  • the holding member holds the lift pin with the lower end portion of the lift pin sandwiched between the ring portion and the elastic member.
  • the lift pin is held at both ends of the lift pin by the first through hole of the susceptor where the upper part of the lift pin is hooked and the holding member holding the lift pin, and the inclination of the lift pin can be stabilized.
  • the holding member of the present invention is A holding member for holding a lift pin inserted into a through-hole of a susceptor having a through-hole penetrating the front and back and rotatable around an axis, A ring located around the axis; An elastic member including a connecting portion connected to the ring portion, extending from the connecting portion along the ring portion and biasing the connecting portion as a base point toward the ring portion; With A lift pin is sandwiched and held between the ring portion and the elastic member.
  • the present invention is configured as a holding member. Like the holding member of the epitaxial growth apparatus described above, the lift pin can be held while maintaining the position where the lift pin is held for a long period of time.
  • the schematic cross section of the vapor phase growth apparatus of an example of this invention is a schematic plan view of the susceptor and the support shaft in FIG. 1 (however, the susceptor is shown by a broken line in order to explain the positional relationship between the susceptor and the support shaft).
  • the model perspective view of the support ring of FIG. 4B is a schematic bottom view of the support ring of FIG. 4A.
  • the schematic cross section of the vapor phase growth apparatus used by the comparative example The schematic plan view of the support shaft of FIG.
  • FIG. 1 shows a single wafer type vapor phase growth apparatus 1 which is an example of the epitaxial growth apparatus of the present invention.
  • the epitaxial layer is vapor-phase grown on the substrate W by the vapor phase growth apparatus 1, and an epitaxial wafer is manufactured.
  • the vapor phase growth apparatus 1 includes a reaction furnace 2. Inside the reaction furnace 2, a susceptor 3, a support shaft 4 that supports the susceptor 3, a lift pin 5 that passes through the susceptor 3 and the support shaft 4, a support ring 6 that holds the lift pin 5, and the lift pin 5 are supported. A lift pin support 7 is provided.
  • the susceptor 3 is a graphite and disk-shaped member coated with silicon carbide. As shown in FIG. 2, the susceptor 3 has a pocket portion 3 a in which the surface of the susceptor 3 is recessed in a disk shape, and a plurality of through holes 3 b that penetrate the susceptor 3 from the surface of the pocket portion 3 a toward the back surface of the susceptor 3. .
  • the pocket portion 3a has a concave shape in which the upper surface of the susceptor 3 is cut into a disk shape having a depth approximately the same as the thickness of the substrate W, which is several millimeters larger than the diameter of the substrate W. A substrate W is placed inside the pocket portion 3a.
  • the through-hole 3b is a funnel-shaped hole.
  • the through hole 3b includes an upper part U and a lower part D connected to the lower end of the upper part U.
  • the upper portion U is a tapered hole whose inner diameter is reduced from the upper end toward the lower end.
  • the lower part D is a cylindrical hole connected to the inner diameter of the lower end of the upper part U and having the same inner diameter.
  • a plurality of (three) through holes 3b are formed at equiangular intervals around the center C of the pocket portion 3a in plan view.
  • two through holes 3b are illustrated, and the susceptor 3 is disposed in the reaction furnace 2 so as to be rotatable around an axis O extending in the vertical direction with the substrate W placed on the pocket portion 3a. .
  • the support shaft 4 is a quartz support member that supports the susceptor 3.
  • the support shaft 4 is disposed in the reaction furnace 2 so as to support the susceptor 3 horizontally or substantially horizontally from the back side of the susceptor 3.
  • the support shaft 4 extends from the lower side of the susceptor 3 along the axis O toward the back surface of the susceptor 3, and a plurality of (three) arms that extend from the support column 4 a and connect to the back surface of the susceptor 3.
  • a portion 4b is provided (see FIG. 3).
  • the support column 4a is formed in a columnar shape extending in the vertical direction, and the arm 4b is connected to the upper end.
  • the arm portion 4b includes one end E1 connected to the upper end of the support column 4a, the other end E2 connected to the outer peripheral portion of the back surface of the susceptor 3, and extends from the one end E1 below the through hole 3b of the susceptor 3.
  • a connection portion E3 is provided to connect to the other end portion E2 so as to cross.
  • the connection portion E3 includes a through hole H that penetrates the connection portion E3 along the axis O at a portion corresponding to the bottom of the through hole 3b of the susceptor 3.
  • FIG. 3 which is a plan view of the support shaft 4
  • the through hole H is formed in an elliptical shape or a long hole shape in which the radial direction of the susceptor 3 has a long diameter. Further, the size of the through hole H is such that the through hole 3b is accommodated inside the through hole H.
  • lift pins 5 are inserted into the through holes H of the support shaft 4 and the through holes 3 b of the susceptor 3.
  • the lift pins 5 are members that transfer the substrate W to and from the susceptor 3.
  • the lift pin 5 includes a round bar-shaped main body 5a and a head 5b connected to the upper end of the main body 5a.
  • the main body 5a has a cylindrical shape, and the diameter of the cylindrical shape is smaller than the inner diameter of the lower portion D of the through hole 3b.
  • the head portion 5b has a tapered shape that increases in diameter upward from a lower end connected to the upper end of the main body portion 5a. The head 5b fits inside the upper portion U so as to be caught by the upper portion U of the through hole 3b.
  • the lift pin 5 is attached to the susceptor 3 with the head portion 5b held in the through hole 3b.
  • the lift pin 5 is prepared above the susceptor 3, the lift pin 5 is inserted into the through hole 3b from the main body 5a side, passes through the through hole 3b, and passes through the main body 5a. Is inserted into the through hole H.
  • the lift pin 5 is inserted into the through holes 3b and H in this way, the head 5b of the lift pin 5 is caught on the upper portion U of the through hole 3b, the lift pin 5 is hung on the through hole 3b, and the upper portion U of the through hole 3b is The lift pin 5 is blocked by the head 5b.
  • a wide gap is formed in the radial direction of the susceptor 3 between the through hole H and the lift pin 5 inserted into the through hole H, and the thermal expansion coefficient between the graphite susceptor 3 and the quartz arm portion 4b. Even if the positional relationship between the through hole 3b and the through hole H changes greatly due to the difference, the position of the lift pin 5 in the radial direction of the susceptor 3 is not restricted by the through hole H.
  • the circumferential clearance of the susceptor 3 between the through hole H and the lift pin 5 is the same as or substantially the same as the clearance between the through hole 3b and the lift pin 5, and the lift pin in the circumferential direction of the susceptor 3 is used. The variation of the inclination of 5 can be suppressed.
  • a plurality (three) of lift pins 5 are held by the susceptor 3.
  • the lift pin 5 is held by the support ring 6 at the lower end portion of the lift pin 5 while the head portion 5b is held by the through hole 3b of the susceptor 3.
  • the support ring 6 is a silicon carbide and ring-shaped member that holds the three lift pins 5 therebetween.
  • the support ring 6 includes a ring portion 6a positioned around the axis O and an elastically deformable plate member 6b connected to the ring portion 6a.
  • the ring portion 6a is formed in a circular shape or a substantially circular shape centering on the axis O, and a plate-like member 6b is connected to the inner peripheral surface of the ring portion 6a. As shown in FIG.
  • the plate-like member 6b has a connection part 6b1 connected to the ring part 6a and a main body part 6b2 extending from the connection part 6b1 along the ring part 6a.
  • the connecting portion 6b1 is formed in a plate shape extending from the inner peripheral surface of the ring portion 6a to the inner side of the ring portion 6a so as to be away from the inner peripheral surface.
  • the main body portion 6b2 is formed in a plate shape that is connected to the connection portion 6b1 and extends along the inner peripheral surface of the ring portion 6a.
  • the plate-like member 6b is biased in a direction in which the main body 6b2 approaches the inner peripheral surface of the ring portion 6a based on elastic deformation at the connection portion 6b1.
  • FIG. 5A shows a state in which a plurality of lift pins 5 are sandwiched and held between the ring portion 6a and the plate-like member 6b by the support ring 6, respectively.
  • FIG. 5B the lift pin 5 is sandwiched and held between a plate-like member 6b and a ring portion 6a that are biased in a direction approaching the inner peripheral surface of the ring portion 6a.
  • the lower end of the lift pin 5 is held by a support ring 6.
  • the tilt (posture) of the lift pin 5 is supported by the support ring 6 and the through hole 3b.
  • the lift pin 5 is supported by the lift pin support portion 7 when the substrate W is transferred to and from the susceptor 3.
  • the lift pin support portion 7 supports the lower end of the lift pin 5 and raises and lowers the lift pin 5.
  • the lift pin support portion 7 is connected to the cylindrical portion 7a surrounding the column portion 4a, a plurality of arms 7b extending radially from the upper end portion of the cylindrical portion 7a and positioned near the lower end of the lift pin 5, and the upper end of the arm 7b. And a support base 7c for supporting the lower end of the lift pin 5.
  • the drive part 8 is connected to the cylindrical part 7a and the lower end part of the support
  • the drive unit 8 is configured as a drive unit (for example, a motor or an actuator) that operates the column unit 4a and the cylindrical unit 7a independently.
  • the drive part 8 can rotate the support
  • the support base 7c supports the lower end of the lift pin 5, raises the lift pin 5, and the lift pin 5 protrudes from the through-hole 3b.
  • the drive unit 8 lowers the cylindrical portion 7a, so that the lift pin 5 is suspended from the through hole 3b.
  • a gas supply pipe 9 and a gas discharge pipe 10 are arranged outside the reaction furnace 2 on the left and right sides of the reaction furnace 2.
  • a plurality of lamps 11 are disposed above and below the reaction furnace 2.
  • the gas supply pipe 9 is located on one end side in the horizontal direction of the reaction furnace 2 (left side in FIG. 1), and supplies various gases into the reaction furnace 2 substantially horizontally.
  • the gas supply pipe 9 supplies a vapor phase growth gas into the reaction furnace 2 during vapor phase growth.
  • the vapor phase growth gas includes, for example, a source gas that is a raw material for the silicon single crystal film, a carrier gas that dilutes the source gas, and a dopant gas that imparts conductivity to the single crystal film.
  • the gas discharge pipe 10 is located on the other end side (the right side in the drawing) of the reaction furnace 2 in the horizontal direction, and discharges the gas in the reaction furnace 2 to the outside of the reaction furnace 2.
  • the gas discharge pipe 10 discharges vapor phase growth gas or the like that has passed through the substrate W.
  • a plurality of lamps 11 are arranged above and below the reaction furnace 2 and serve as a heat source for adjusting the temperature of the substrate W or the like located in the reaction furnace 2 by heating the inside of the reaction furnace 2 during vapor phase growth.
  • the main parts of the vapor phase growth apparatus 1 have been described above. Next, a process of placing the substrate W transferred into the reaction furnace 2 by a transfer robot (not shown) in the pocket portion 3a of the susceptor 3 will be described.
  • the substrate W is transported above the susceptor 3 by a transport robot (not shown), and the substrate W transported above the susceptor 3 is placed in the pocket portion 3a as follows, for example.
  • the drive unit 8 raises the cylindrical portion 7a and lifts the lift pin 5 so as to protrude from the through hole 3b.
  • the lift pins 5 are raised until the upper end surface of the head 5b reaches the back surface of the substrate W, and the upper surface of the lift pin 5 supports the back surface of the substrate W to receive the substrate W.
  • the drive unit 8 lowers the lift pin 5 by lowering the cylindrical portion 7a. Then, the substrate W supported by the lift pins 5 is lowered, and the substrate W is placed in the pocket portion 3a.
  • the lift pin 5 When the lift pin 5 is lowered and the substrate W is placed in the pocket portion 3a, the head 5b of the lift pin 5 is lowered so as to be separated from the back surface of the substrate W. Then, the lift pin 5 hangs from the through hole 3b so that the head 5b is caught by the through hole 3b, and the support base 7c that supports the lower end of the lift pin 5 is separated from the lift pin 5 (see FIG. 1).
  • the substrate W is transferred to the pocket portion 3 a of the susceptor 3. Thereafter, the drive unit 8 rotates the support column 4a around the axis O. As a result, the susceptor 3 and the substrate W placed on the susceptor 3 are rotated about the axis O, and a vapor phase growth gas is supplied to the surface of the rotating substrate W to grow an epitaxial layer on the substrate W. Manufactured.
  • the flow of the vapor growth gas supplied to the substrate W changes depending on the position of the substrate W placed in the pocket portion 3a, and the film thickness of the epitaxial layer grown on the substrate W is increased. Will be affected.
  • an epitaxial layer is grown on the substrate W in a state where a gap formed in the circumferential direction of the substrate W placed in the pocket portion 3a (a gap between the substrate W and the pocket portion 3a) is not uniform in the circumferential direction of the substrate W
  • the film thickness distribution of the epitaxial layer deteriorates at the outer periphery of the substrate W.
  • the substrate W be placed on the pocket portion 3a so that the gap with the pocket portion 3a is uniform in the circumferential direction of the substrate W.
  • the substrate W placed in the pocket portion 3 a is transported to the pocket portion 3 a in a state where the back surface of the substrate W is supported by the lift pins 5. Therefore, the position where the substrate W is placed in the pocket portion 3a is affected by the lift pins 5 that transport the substrate W to the pocket portion 3a. For example, when the substrate W is supported by the lift pins 5, the lift pins 5 may wobble due to the load of the substrate W, so that the position of the substrate W placed in the pocket portion 3 a may vary.
  • the temperature in the reaction furnace 2 becomes unstable, for example, when the substrate W at room temperature is carried into the high-temperature reaction furnace 2, and the ring portion 6 a and the plate-like member 6 b that hold the lift pins 5 are thermally expanded / heated. Even if the contraction is repeated, the force for holding the lift pins 5 does not loosen greatly. Therefore, the lift pin 5 can be held while maintaining the position where the ring portion 6 a and the plate-like member 6 b hold the lift pin 5.
  • an elongated hole extending in the radial direction of the susceptor 3 is formed between the through hole H of the arm portion 4b into which the lift pin 5 is inserted and the lift pin 5, and the position of the lift pin 5 in the radial direction of the susceptor 3 is formed by the through hole H. Is not restrained.
  • the circumferential clearance of the susceptor 3 between the through hole H and the lift pin 5 is the same as or substantially the same as the clearance between the through hole 3b and the lift pin 5, and the lift pin in the circumferential direction of the susceptor 3 is used. The variation in the inclination of 5 can be suppressed.
  • the positional relationship between the through hole 3b and the through hole H changes greatly due to the difference in thermal expansion coefficient between the graphite susceptor 3 and the quartz arm portion 4b, and the posture (tilt) of the lift pin 5 becomes unstable. Can be suppressed.
  • the susceptor 3 having the through hole 3b into which the lift pin 5 is inserted is made of graphite, and the support ring 6 that holds the lift pin 5 inserted into the through hole 3b is made of silicon carbide. Therefore, the difference in coefficient of thermal expansion between the susceptor 3 and the support ring 6 can be reduced, and the positional relationship between the through hole 3b and the support ring 6 can be suppressed from changing greatly due to a temperature change in the reaction furnace 2 or the like. As a result, it is possible to suppress the inclination of the lift pin 5 from becoming unstable. Note that it is more effective to use a susceptor made of silicon carbide instead of the susceptor 3 made of graphite.
  • a substrate W which is a silicon single crystal substrate having a diameter of 300 mm, and the vapor phase growth apparatus 1 are prepared, and the substrate W is placed in the pocket portion 3a of the susceptor 3 of the vapor phase growth apparatus 1 using the prepared substrate W and the vapor phase growth apparatus 1.
  • the epitaxial layer was grown on the mounted substrate W to manufacture an epitaxial wafer. And based on the film thickness distribution of the outer peripheral part of the epitaxial layer of the manufactured epitaxial wafer, the distance which the center of the board
  • an epitaxial wafer was manufactured using a vapor phase growth apparatus 101 (see FIGS. 6 and 7) similar to the vapor phase growth apparatus 1 except for the following configuration.
  • a vapor phase growth apparatus 101 similar to the vapor phase growth apparatus 1 except for the following configuration.
  • the vapor phase growth apparatus 101 will be described, the same components as those of the vapor phase growth apparatus 1 are denoted by the same reference numerals and description thereof will be omitted, and only the specific configurations will be described.
  • the support ring 6 is removed from the vapor phase growth apparatus 1 and a support shaft 104 is attached instead of the support shaft 4.
  • the support shaft 104 is obtained by changing the shape of the through hole H of the support shaft 4 from a long hole to a cylindrical through hole H1 smaller than the long hole, and the lift pin 5 inserted into the through holes 3b and H1 has a through hole.
  • the inclination of the lift pin 5 is determined by 3b and H1. Except for using such a vapor phase growth apparatus 101, 100 epitaxial wafers were manufactured under the same conditions as in the example, and the average value and the standard deviation of the amount of displacement were calculated.
  • the measurement results obtained in the examples and comparative examples are as follows.
  • the average value of the displacement amount is 52 ⁇ m and the standard deviation of the displacement amount is 26 ⁇ m
  • the average value of the displacement amount is 148 ⁇ m and the standard of the displacement amount.
  • the deviation is 79 ⁇ m. Therefore, in the example, the variation in the position of the substrate W placed in the pocket portion 3a can be reduced as compared with the comparative example.

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JP6536463B2 (ja) * 2016-04-21 2019-07-03 株式会社Sumco エピタキシャル成長装置
US11018047B2 (en) * 2018-01-25 2021-05-25 Asm Ip Holding B.V. Hybrid lift pin
JP7135841B2 (ja) 2018-12-25 2022-09-13 株式会社Sumco ウェーハ移載装置、気相成長装置、ウェーハ移載方法およびエピタキシャルシリコンウェーハの製造方法
JP7200898B2 (ja) * 2019-09-27 2023-01-10 株式会社Sumco ワークの両面研磨方法

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CN108604539A (zh) 2018-09-28

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