WO2017121351A1 - Oled阵列基板及其制造方法、oled显示面板和oled显示装置 - Google Patents

Oled阵列基板及其制造方法、oled显示面板和oled显示装置 Download PDF

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WO2017121351A1
WO2017121351A1 PCT/CN2017/070955 CN2017070955W WO2017121351A1 WO 2017121351 A1 WO2017121351 A1 WO 2017121351A1 CN 2017070955 W CN2017070955 W CN 2017070955W WO 2017121351 A1 WO2017121351 A1 WO 2017121351A1
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electrode
layer
array substrate
sub
light
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PCT/CN2017/070955
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English (en)
French (fr)
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李伟
宋泳锡
张建业
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京东方科技集团股份有限公司
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Priority to KR1020197027643A priority Critical patent/KR102149726B1/ko
Priority to EP17729749.6A priority patent/EP3404720B1/en
Priority to KR1020177017712A priority patent/KR20180096491A/ko
Priority to JP2017534238A priority patent/JP6998767B2/ja
Priority to US15/538,637 priority patent/US10727446B2/en
Publication of WO2017121351A1 publication Critical patent/WO2017121351A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/876—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/852—Arrangements for extracting light from the devices comprising a resonant cavity structure, e.g. Bragg reflector pair
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present disclosure relates to the field of display technology, and in particular to an organic light emitting diode (OLED) array substrate having a microcavity structure, a method of fabricating the same, an OLED display panel, and an OLED display device.
  • OLED organic light emitting diode
  • OLED display device is a device that realizes a graphic display by utilizing an invertible color phenomenon generated by an organic semiconductor material driven by a current.
  • OLED display device has ultra-light, ultra-thin, high brightness, large viewing angle, low voltage, low power consumption, fast response, high definition, shock resistance, bendability, low cost, simple process, low use of raw materials, high luminous efficiency and temperature A wide range of advantages, is considered to be the most promising next-generation display technology.
  • the emission band of the OLED luminescent material is wide and cannot satisfy the color purity of the desired light source, the luminescent efficiency and brightness of the OLED are limited, resulting in low contrast and poor display performance of the corresponding display device.
  • an OLED array substrate may include a plurality of pixel units, each of the pixel units including a plurality of sub-pixel units, each of the sub-pixel units including a light emitting portion, each of the light emitting portions having a first electrode remote from the light exiting side, a second electrode adjacent to the light exiting side, and an organic light emitting layer sandwiched between the first electrode and the second electrode, wherein the sub-pixel unit further includes a light emitting side on the light emitting side of the second electrode An organic film layer and a half mirror layer are provided.
  • the first electrode includes a reflective layer and the second electrode is a transparent electrode.
  • the structure between the first electrode and the half mirror layer constitutes a microcavity structure, and the organic film layers of the sub-pixel units of different colors of each pixel unit have different thicknesses.
  • the organic film layers of the red sub-pixel unit (R), the green sub-pixel unit (G), and the blue sub-pixel unit (B) have different thicknesses.
  • the pixel unit is an RGBG pixel unit
  • the organic film layers may have the same thickness.
  • half mirror layer relates to an optical layer that combines both reflective and transmissive properties, although referred to as a "semi-" mirror layer, light incident on the half mirror layer can be Reflected and transmitted, without limitation, a strict 50% is reflected and 50% is transmitted.
  • the above array substrate light generated by the organic light-emitting layer undergoes reflection, total reflection, interference, diffraction or scattering in a microcavity structure delimited by the first electrode and the half mirror layer, and a part of the light is from the half mirror layer
  • the exiting, outgoing light direction and intensity depend on the nature of the microcavity structure, in other words, the parameters of the microcavity structure can be designed according to the nature of the light produced by the organic light-emitting layer and the desired direction and intensity of the outgoing light.
  • the color purity of the emitted light can be improved, the luminous efficiency and brightness of the display device can be enhanced, and a display device with high contrast and low power consumption can be obtained.
  • the light emitted by the microcavity structure has better directivity and higher color purity, so that no subsequent black matrix process is needed, which greatly increases the aperture ratio of the display device while saving cost.
  • microcavity or “microcavity structure” primarily refers to a microcavity having an whispering gallery mode; such a microcavity is an optical cavity of the order of magnitude or submicron, which utilizes The effects of reflection, total reflection, interference, diffraction or scattering at the interface of discontinuous refractive index limit the light to a small wavelength region.
  • the illuminating center is located near the antinode of the standing wave field in the cavity, which can improve the coupling efficiency of the radiated dipole and the electric field in the cavity, thereby improving the luminous efficiency and brightness of the device. .
  • the thickness of the organic film layer may be designed according to an effective cavity length of the microcavity structure, a full width at half maximum of the emission peak, and a Fabry-Perot formula. Specifically, the effective cavity length L( ⁇ ) of the microcavity structure is calculated by:
  • ⁇ is the resonant wavelength of the light emitted by the corresponding light emitting portion
  • R is the effective reflectance of the first electrode
  • ⁇ n is the refractive index difference between the two materials forming the half mirror layer and the first electrode, respectively, n j and d j respectively Is the refractive index and thickness of the j-th layer material
  • ⁇ m is the phase shift of light on the half mirror layer; All layers sandwiched between the first electrode and the half mirror layer are taken into account.
  • ⁇ is the resonant wavelength of the light emitted by the corresponding light-emitting portion
  • R is the effective reflectance of the first electrode
  • L( ⁇ ) is the effective cavity length of the microcavity structure in the formula (1)
  • R 1 and R 2 are respectively The specular reflectance of the first electrode and the half mirror layer.
  • the range of thickness of the organic film layer can be defined by the Fabry-Perot formula:
  • n j and d j are the refractive index and thickness of the jth layer, respectively; Is the angle of light in the jth layer measured from the normal perpendicular to the plane of the light emitting portion; ⁇ is the resonant wavelength of the light emitted by the light emitting portion; All layers sandwiched between the first electrode and the half mirror layer are taken into account.
  • the effective cavity length and the full width at half maximum of the emission peak can be continuously optimized, thereby designing the three most unknown amounts. Excellent value.
  • each of the pixel units includes a red (R) sub-pixel unit, a green (G) sub-pixel unit, and a blue (B) sub-pixel unit.
  • R red
  • G green
  • B blue
  • the thickness of the organic film layer corresponds to the corresponding sub-pixel unit, for example, the organic film layer corresponding to the red sub-pixel unit is the thickest, corresponds to the organic film level of the green sub-pixel unit, and corresponds to the blue sub-pixel.
  • the organic film layer of the unit is the thinnest.
  • the sub-pixel unit may further include a half disposed in the half The color film layer on the light exit side of the mirror layer, and the color film layers of the different color sub-pixel units of the pixel unit have different colors.
  • the color film layers may be red, green, and blue.
  • the organic film layer may be formed of a low temperature curing material having a curing temperature of not higher than about 100 °C.
  • the low temperature curing material includes one or more of an epoxy resin, an acrylic resin, a phenol resin, and a polyurethane.
  • the organic film layer having a non-uniform thickness can be introduced by a half-tone mask process.
  • half-order mask process means that in a photolithography process, since the thickness of the pattern on the mask is not uniform, the amount of light transmitted at different positions on the mask is different, so that The amount of exposure at different positions on the organic film layer is different, and thus an organic film layer having uneven thickness is obtained.
  • the thickness of the half mirror layer may be approximately 100-150 nm.
  • the half mirror layer may be a metal layer in which a plurality of holes regularly arranged are arranged.
  • the size, density and arrangement of the holes can be designed according to the desired direction of light exiting, that is, the size, density and arrangement of the holes determine the direction of the light to be reinforced.
  • the size, density, and arrangement of the pores are related to the thickness of the organic film layer.
  • the thickness of the organic film layer can be designed according to the size, density and arrangement of the holes, or vice versa.
  • the thickness of the first electrode layer may be about 90-100 nm.
  • the thickness of the second electrode layer may be about 100-150 nm.
  • the sub-pixel unit further includes an encapsulation layer disposed between the second electrode and the organic film layer, the encapsulation layer having a thickness of about 3.0 to 3.5 ⁇ m.
  • the encapsulation layer can function as a flat layer. In the case where the sub-pixel unit includes an encapsulation layer, the calculation of the thickness of the above organic film layer needs to take into account the encapsulation layer.
  • the OLED array substrate further includes a pixel defining layer disposed between the first electrode of each sub-pixel unit and the organic light emitting layer, and the pixel defining layer may have a thickness of about 1.0-1.5 ⁇ m.
  • the pixel definition layer usually has a grid structure, the "mesh" of the grid structure corresponds to each sub-pixel unit, and the boundary of the mesh is used for each The sub-pixel units are delimited. Therefore, it is not necessary to take into account the pixel defining layer in the calculation of the thickness of the above organic film layer.
  • the organic light emitting layer may have a thickness of about 200 to 300 nm.
  • the OLED array substrate further includes a secondary encapsulation layer disposed on a light outgoing side of the color film layer of each sub-pixel unit, the secondary encapsulation layer having a thickness of about 3.0-3.5 ⁇ m .
  • the secondary encapsulation layer comprises an acrylate based adhesive and a glass cover.
  • an OLED display panel which may include the OLED array substrate described above.
  • an OLED display device which may include the above OLED display panel.
  • a method of fabricating an organic light emitting diode array substrate comprising a plurality of pixel units, each of the pixel units including a plurality of sub-pixel units; the manufacturing method comprising:
  • the first electrode comprises a reflective layer
  • the second electrode is a transparent electrode
  • the structure between the first electrode and the half mirror layer constitutes a microcavity structure
  • each pixel unit has a different color
  • the organic film layers of the sub-pixel units may have different thicknesses.
  • the OLED array substrate manufactured by the above method light generated by the organic light-emitting layer undergoes reflection, total reflection, diffraction, or scattering in a microcavity structure delimited by the first electrode and the half mirror layer, and a part of the light is half
  • the mirror layer exits and the direction of the outgoing light depends on the nature of the half mirror layer.
  • color purity can be improved, luminous efficiency and brightness of the display panel can be enhanced, and a display device with high contrast and low power consumption can be obtained.
  • the light emitted by the microcavity structure has better directivity and higher color purity, so that no subsequent black matrix process is needed, which greatly increases the aperture ratio of the display device while saving cost.
  • the organic film layer of each sub-pixel unit may be integrally formed by spin coating a low temperature curing organic material; using a halftone mask, through Exposure and development form an organic film layer having a non-uniform thickness.
  • the process temperature may be less than about 100 ° C to prevent damage to the various layer structures that have been formed.
  • the OLED display panel according to the second aspect of the present disclosure, the OLED display device according to the third aspect of the present disclosure, and the method of manufacturing the OLED array substrate according to the fourth aspect of the present disclosure have the OLED array according to the first aspect of the present disclosure Preferred embodiments, advantages and benefits of the same or corresponding substrates are not described herein.
  • FIG. 1 is a schematic cross-sectional view of a sub-pixel unit of an organic light emitting diode array substrate in accordance with an embodiment of the present disclosure
  • FIG. 2 is a schematic cross-sectional view of an organic light emitting diode array substrate in accordance with an embodiment of the present disclosure
  • FIG. 3 is a flow chart of a method of fabricating an organic light emitting diode array substrate in accordance with an embodiment of the present disclosure.
  • the sub-pixel unit includes a first electrode 1, an organic light-emitting layer 6, and a second electrode 2, which are sequentially disposed on the base substrate 5, and an organic film layer 3 and a half mirror layer 4 which are sequentially disposed on the second electrode 2.
  • the first electrode 1 includes a reflective layer, for example, the first electrode 1 may be a multilayer stacked structure, wherein one or more layers on the farthest side of the first electrode 1 farthest from the light exiting side are reflective layers, which may be made of, for example, silver or aluminum Made of metal.
  • the first electrode 1 may also be a single-layer reflective layer, which may also be made of a metal such as silver or aluminum. production.
  • the second electrode 2 is a transparent electrode (for example, made of indium tin oxide (ITO)).
  • ITO indium tin oxide
  • the structure between the half mirror layer 4 and the first electrode 1 constitutes a microcavity structure 100.
  • the OLED array substrate is introduced into the microcavity structure, which can improve the color purity, enhance the luminous efficiency and brightness, and thereby obtain a display device with high contrast and low energy consumption.
  • the light emitted by the microcavity structure has better directivity and higher color purity, so that no subsequent black matrix process is needed, which greatly increases the aperture ratio of the display device while saving cost.
  • the organic film layer is formed of a low temperature curing material, and the curing temperature of the material does not exceed about 100 °C. Selecting the low temperature curing material to form the organic film layer 3 can prevent the organic light emitting layer 6 from being damaged in a high temperature process.
  • the low temperature curing material includes one or more of an epoxy resin, an acrylic resin, a phenol resin, and a polyurethane.
  • the microcavity structure 100 is designed according to the effective cavity length of the microcavity structure 100, the full width at half maximum of the emission peak, and the Fabry-Perot formula. Specifically, the effective cavity length L( ⁇ ) of the microcavity structure is calculated by:
  • ⁇ is the resonant wavelength of the light emitted by the light-emitting portion
  • R is the effective reflectance of the first electrode
  • ⁇ n is the refractive index difference between the two materials forming the half mirror layer 4 and the first electrode 1
  • n j and d j Respectively the refractive index and thickness of the j-th layer material
  • ⁇ m is the phase shift of light on the half mirror layer 4; It is necessary to take into account all the layers sandwiched between the first electrode 1 and the half mirror layer 4, and the sub-pixel unit shown in FIG. 1 is taken as an example, including the organic light-emitting layer 6, the second electrode 2, and the organic film layer 3.
  • the term "effective cavity length" as used herein refers to the effective length of the microcavity structure 100 in the sense of reflection, rather than simply a simple superposition of the thicknesses of the layers constituting the microcavity structure 100.
  • ⁇ is the resonant wavelength of the light emitted by the light-emitting portion
  • R is the effective reflectance of the first electrode 1
  • L( ⁇ ) is the effective cavity length of the microcavity structure calculated according to the formula (1), R 1 , R 2 The specular reflectance of the first electrode 1 and the half mirror layer 4, respectively.
  • the Fabry-Porro formula is:
  • n j and d j are the refractive index and thickness of the jth layer, respectively; Is the angle of light in the jth layer measured from a normal perpendicular to the plane of the light emitting device; ⁇ is the resonant wavelength of the light emitted by the light emitting portion; It is necessary to take into account all the layers sandwiched between the first electrode 1 and the half mirror layer 4, and also the sub-pixel unit shown in FIG. 1 as an example, including the organic light-emitting layer 6, the second electrode 2, and the organic film layer 3.
  • the effective cavity length and the full width at half maximum of the emission peak can be continuously optimized, thereby designing the three most unknown amounts. Excellent value.
  • FIG. 2 illustrates a cross-sectional schematic view of an organic light emitting diode array substrate in accordance with an embodiment of the present disclosure.
  • the array substrate includes a plurality of pixel units (one pixel unit is schematically illustrated in FIG. 2), each of the pixel units including a plurality of sub-pixel units 200, each of which includes a half mirror layer Color film layers 7-1, 7-2, and 7-3 above 4, wherein the color film layers 7-1, 7-2, and 7-3 of the sub-pixel units 200 of different colors have different colors.
  • the color film layer is directly formed on the microcavity structure 100, and the alignment precision of the color film layer and the sub-pixel unit can be improved. At the same time, the thickness of the OLED array substrate is reduced.
  • each pixel unit includes a red (R) sub-pixel unit, a green (G) sub-pixel unit, and a blue (B) sub-pixel unit.
  • R red
  • G green
  • B blue
  • the non-directional light is selected to be directional light, resulting in an increase in light intensity in that particular direction.
  • the thickness of the organic film layer corresponds to the corresponding sub-pixel unit, for example, the organic film layer corresponding to the red sub-pixel unit is the thickest, corresponds to the organic film level of the green sub-pixel unit, and corresponds to the blue sub-pixel.
  • the organic film layer of the unit is the thinnest.
  • the half mirror layer 4 is formed of a metal layer (not shown in Fig. 2) in which a plurality of holes are arranged.
  • the size and density of the holes can be designed according to the desired direction of light exiting, that is, the size and density of the holes determine the direction of the light to be strengthened.
  • the size and density of the holes It is related to the thickness of the organic film layer.
  • the thickness of the organic film layer can be designed according to the size and density of the holes, or vice versa.
  • a plurality of holes may be regularly arranged in the metal layer.
  • the arrangement of the holes can be designed according to the desired direction of light exit.
  • the sub-pixel unit 200 further includes an encapsulation layer 8 disposed between the second electrode 2 and the organic film layer 3, which may function as a flat layer.
  • the OLED array substrate further includes a pixel defining layer 10 disposed over the first electrode 1 of each sub-pixel unit 200.
  • the design of the microcavity structure 100 also requires consideration of the encapsulation layer 8.
  • the organic light emitting layer 6 may include an electron injection layer (not shown).
  • the design of the microcavity structure 100 also needs to account for the electron injection layer.
  • the OLED array substrate further includes a secondary encapsulation layer 9 disposed on the color film layer 7 of each sub-pixel unit.
  • the secondary encapsulation layer 9 may include an acrylate-based adhesive and a glass cover.
  • the thickness of the secondary encapsulation layer 9 is about 3.0 to 3.5 ⁇ m.
  • the thickness of the half mirror layer 4 is about 100-150 nm
  • the thickness of the first electrode 1 is about 90-100 nm
  • the thickness of the pixel defining layer 10 may be about 1.0-1.5 ⁇ m
  • the organic light-emitting layer 6 The thickness of the second electrode 2 is about 100-150 nm
  • the thickness of the encapsulation layer 8 may be about 3.0-3.5 ⁇ m.
  • the thickness of the organic film layer 3 in the region corresponding to the different color sub-pixels can be calculated.
  • the OLED array substrate is introduced into the microcavity structure, which can improve the color purity, enhance the luminous efficiency and brightness, and thereby obtain a display device with high contrast and low energy consumption.
  • the light emitted by the microcavity structure has better directivity and higher color purity, so that no subsequent black matrix process is needed, which greatly increases the aperture ratio of the display device while saving cost.
  • FIG. 3 illustrates a flow chart of a method of fabricating the above-described organic light emitting diode array substrate according to an embodiment. As shown in FIG. 3, the method includes the following steps.
  • S3 forming a patterned first electrode on the prepared array substrate by sputtering, spin coating, exposure development, etching peeling, or the like, the first electrode having better reflectivity (including, for example, a metal layer), and The thickness may be about 90-100 nm;
  • S6 obtaining a patterned second electrode by sputtering, spin coating, exposure development, etching peeling, or the like, the second electrode having good permeability (for example, made of a transparent conductive material such as indium tin oxide (ITO) And can have a thickness of about 100-150 nm;
  • ITO indium tin oxide
  • a secondary encapsulation layer is formed, which may have a thickness of about 3.0 to 3.5 ⁇ m.
  • the step S9 of obtaining the half mirror layer may comprise the following substeps:

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Abstract

提供一种OLED阵列基板，包括多个像素单元，每个像素单元包括多个子像素单元，每个子像素单元包括发光部，每个发光部具有远离出光侧的第一电极（1）、靠近出光侧的第二电极（2）和夹在第一电极（1）和第二电极（2）之间的有机发光层（6），其中子像素单元还包括在第二电极（2）的出光侧上依次设置的有机膜层（3）和半反射镜层（4），第一电极（1）包括反射层，第二电极（2）为透明电极，第一电极（1）与半反射镜层（4）之间的结构构成微腔结构，且每个像素单元的不同颜色的子像素单元的有机膜层具有不同厚度。还提供了一种OLED显示面板、OLED显示装置以及制造阵列基板的方法。

Description

OLED阵列基板及其制造方法、OLED显示面板和OLED显示装置 技术领域
本公开涉及显示技术领域，并且具体地涉及一种具有微腔结构的有机发光二极管(OLED)阵列基板及其制造方法、OLED显示面板和OLED显示装置。
背景技术
有机发光二极管(OLED)显示装置是一种利用有机半导体材料在电流的驱动下产生的可逆变色现象来实现图形显示的设备。OLED显示装置具有超轻、超薄、高亮度、大视角、低电压、低功耗、快响应、高清晰度、抗震、可弯曲、低成本、工艺简单、使用原材料少、发光效率高和温度范围广等优点，被认为是最有发展前途的新一代显示技术。
然而，由于OLED发光材料的发光谱带较宽，无法满足所需光源的色纯度，因此OLED的发光效率和亮度受限，从而导致相应的显示装置对比度低、显示效果欠佳。
发明内容
本公开的一个目的是提供一种OLED阵列基板及其制造方法、OLED显示面板和OLED显示装置，其能够至少部分地缓解或消除以上提到的现有技术中所存在的问题。
根据本公开的第一方面，提供了一种OLED阵列基板，该阵列基板可以包括多个像素单元，每一个像素单元包括多个子像素单元，每个子像素单元均包括发光部，每个发光部具有远离出光侧的第一电极、靠近出光侧的第二电极和夹在第一电极和第二电极之间的有机发光层，其中，所述子像素单元还包括在第二电极的出光侧上依次设置的有机膜层和半反射镜层。第一电极包括反射层，第二电极为透明电极。第一电极与半反射镜层之间的结构构成微腔结构，并且每一个像素单元的不同颜色的子像素单元的有机膜层具有不同厚度。例如，当像素单元为典型的RGB像素单元时，红色子像素单元(R)、绿色子像素单元(G)和蓝色子像素单元(B)的有机膜层具有不同的厚度。可替换地，当像素单元为RGBG像素单元时，两个绿色子像素单元(G) 的有机膜层可以具有相同的厚度。
如本文所使用的，术语“半反射镜层”涉及兼具反射性质和透射性质的光学层，尽管称为“半”反射镜层，但是入射到半反射镜层上的光可以以任何比例被反射和被透射，而不限于严格的50％被反射且50％被透射。
在以上阵列基板中，由有机发光层产生的光在由第一电极和半反射镜层定界的微腔结构中经历反射、全反射、干涉、衍射或散射过程，一部分光从半反射镜层出射，出射光方向和强度取决于微腔结构的性质，换言之，微腔结构的参数可以根据有机发光层产生的光的性质和所需出射光方向和强度来设计。根据本公开，通过引入微腔结构，可以提高出射光的色纯度，增强显示装置的发光效率和亮度，进而得到对比度高、低能耗的显示装置。同时，经过微腔结构所发出的光具有较好的方向性，且色纯度较高，因此无需后续的黑矩阵制程，在节约成本的同时极大地提高了显示装置的开口率。
如本文所使用的，术语“微腔”或“微腔结构”主要是指具有回音壁模式的微腔；这样的微腔是一种尺寸在微米或亚微米量级的光学谐振腔，它利用在折射率不连续的界面上的反射、全反射、干涉、衍射或散射等效应，将光限制在一个很小的波长区域内。通过设计腔长和优化腔内各层的厚度，使发光中心位于腔内驻波场的波腹附近，可以提高器件辐射偶极子和腔内电场的耦合效率，从而提高器件的发光效率和亮度。
根据本公开的实施例，所述有机膜层的厚度可以根据微腔结构的有效腔长、发射峰的半高宽和法布里-泊罗公式设计。具体地，微腔结构的有效腔长L(λ)通过下式计算：
Figure PCTCN2017070955-appb-000001
其中，λ为对应发光部发出的光的谐振波长，R为第一电极的有效反射率，Δn为形成半反射镜层与第一电极的两种材料的折射率差，nj和dj分别为第j层材料的折射率和厚度，Φm为光在半反射镜层上的相移；项
Figure PCTCN2017070955-appb-000002
计及夹在第一电极与半反射镜层之间的所有层。
发射峰的半高宽Δλ通过下式计算：
Figure PCTCN2017070955-appb-000003
其中，λ为对应发光部发出的光的谐振波长，R为第一电极的有效反射率，L(λ)为公式(1)中的微腔结构的有效腔长，R1、R2分别为第一电极和半反射镜层的镜面反射率。
在上述公式(1)和(2)中，微腔结构的有效腔长L(λ)、有机膜层的厚度以及发射峰的半高宽Δλ未知，其它量已知或者本领域技术人员通过常规实验手段能够测得。
有机膜层的厚度的取值范围可以由法布里-泊罗公式来限定：
Figure PCTCN2017070955-appb-000004
其中，m为非负整数(例如1、2等)；
Figure PCTCN2017070955-appb-000005
和
Figure PCTCN2017070955-appb-000006
为第一电极和半反射镜层的反射相移，单位是弧度；nj和dj分别是第j层的折射率和厚度；
Figure PCTCN2017070955-appb-000007
是从垂直于发光部平面的法线起测定的第j层中光的角度；λ是发光部发出的光的谐振波长；项
Figure PCTCN2017070955-appb-000008
计及夹在第一电极与半反射镜层之间的所有层。
通过在上述公式(3)中所限定的有机膜层厚度的取值范围中调节有机膜层的厚度，可以不断优化有效腔长和发射峰的半高宽，从而设计出三个未知量的最优值。
在典型的有机发光二极管显示装置中，每一个像素单元包括红色(R)子像素单元、绿色(G)子像素单元和蓝色(B)子像素单元。在微腔结构中，满足谐振波长条件的光由于干涉而加强。通过微腔结构中的反射，无方向的光线被选择成为具有方向性的光线，从而导致该特定方向上的光强度增强。因此，有机膜层的厚度要与对应的子像素单元对应，例如，对应于红色子像素单元的有机膜层最厚，对应于绿色子像素单元的有机膜层次之，并且对应于蓝色子像素单元的有机膜层最薄。
根据本公开的另一实施例，子像素单元还可以包括布置在所述半 反射镜层的出光侧上的彩膜层，并且像素单元的不同颜色的子像素单元的彩膜层的颜色不同。以每一个像素单元包括红色(R)子像素单元、绿色(G)子像素单元和蓝色(B)子像素单元为例，彩膜层可以是红色、绿色和蓝色。
根据本公开的又一实施例，有机膜层可以由低温固化材料形成，固化温度不高于大约100℃。
根据本公开的再一实施例，低温固化材料包括环氧树脂、丙烯酸树脂、酚醛树脂、聚氨酯中的一种或多种。
在上述实施例中，可以通过半阶调掩膜工艺来引入厚度不均匀的有机膜层。如本文所使用的，术语“半阶调掩膜工艺”是指在光刻工艺中，由于掩膜上的图案厚度不一，因而在掩膜上的不同位置处的光透过量不同，使得对应的有机膜层上的不同位置处的曝光量不同，因而得到厚度不均匀的有机膜层。
根据本公开的示例性实施例，半反射镜层的厚度可以为大约100-150nm。
根据本公开的又一实施例，半反射镜层可以为布置有规则排列的多个孔的金属层。孔的大小、密度和排列方式可以根据所需要的出光方向来设计，也就是说，孔的大小、密度和排列方式决定了所要加强的光的方向。作为结果，孔的大小、密度和排列方式与有机膜层的厚度有关。在实践中，可以根据孔的大小、密度和排列方式来设计有机膜层的厚度，或者反之亦然。
可选地，第一电极层的厚度可以为大约90-100nm。
可选地，第二电极层的厚度可以为大约100-150nm。
根据本公开的实施例，子像素单元还包括布置在所述第二电极和所述有机膜层之间的封装层，所述封装层的厚度为大约3.0-3.5μm。该封装层可以充当平坦层的作用。在子像素单元包括封装层的情况下，上述有机膜层的厚度的计算需要计及封装层。
根据本公开的另一实施例，OLED阵列基板还包括布置在各个子像素单元的第一电极与有机发光层之间的像素定义层，所述像素定义层的厚度可以为大约1.0-1.5μm。像素定义层通常具有网格状结构，该网格状结构的“网眼”对应于各个子像素单元，而网眼的边界用于对各 个子像素单元定界。因此，在上述有机膜层的厚度的计算中不需要计及像素定义层。
根据本公开的另一实施例，有机发光层的厚度可以为大约200-300nm。
根据本公开的又一实施例，OLED阵列基板还包括布置在各个子像素单元的所述彩膜层的出光侧上的二次封装层，所述二次封装层的厚度为大约3.0-3.5μm。可选地，所述二次封装层包括丙烯酸酯类粘合剂和玻璃盖板。
根据本公开的第二方面，提供了一种OLED显示面板，其可以包括以上所述的OLED阵列基板。
根据本公开的第三方面，提供了一种OLED显示装置，其可以包括上述OLED显示面板。
根据本公开的第四方面，提供了一种有机发光二极管阵列基板的制造方法，所述OLED阵列基板包括多个像素单元，每一个像素单元包括多个子像素单元；所述制造方法包括：
沿OLED阵列基板的出光方向在衬底基板上依次形成对应于每个子像素单元的第一电极、有机发光层、第二电极、有机膜层和半反射镜层，
其中，所述第一电极包括反射层，所述第二电极为透明电极，所述第一电极与所述半反射镜层之间的结构构成微腔结构，并且每一个像素单元的不同颜色的子像素单元的有机膜层可以具有不同厚度。
在通过以上方法制造的OLED阵列基板中，由有机发光层产生的光在由第一电极和半反射镜层定界的微腔结构中经历反射、全反射、衍射或散射过程，一部分光从半反射镜层出射，出射光方向取决于半反射镜层的性质。根据本公开，通过引入微腔结构，可以提高色纯度，增强显示面板的发光效率和亮度，进而得到对比度高、低能耗的显示装置。同时，经过微腔结构所发出的光具有较好的方向性，且色纯度较高，因此无需后续的黑矩阵制程，在节约成本的同时极大地提高了显示装置的开口率。
根据本公开的实施例，各个子像素单元的有机膜层可以通过以下步骤一体化形成：旋涂低温固化有机材料；使用半色调掩膜板，通过 曝光和显影形成厚度不均匀的有机膜层。
根据本公开的另一实施例，在形成有机膜层的步骤期间，制程温度可以小于大约100℃，以防止对已经形成的各层结构的破坏。
根据本公开的第二方面的OLED显示面板、根据本公开的第三方面的OLED显示装置以及根据本公开的第四方面的OLED阵列基板的制造方法具有与根据本公开的第一方面的OLED阵列基板相同或对应的优选实施例、优点和益处，在此不再赘述。
附图说明
本公开的这些以及其它方面从以下描述的实施例显而易见，并将参照以下描述的实施例来阐述本公开的这些以及其它方面。在附图中，
图1是依照本公开的实施例的有机发光二极管阵列基板的子像素单元的横截面示意图；
图2是依照本公开的实施例的有机发光二极管阵列基板的横截面示意图；以及
图3是依照本公开的实施例的制造有机发光二极管阵列基板的方法的流程图。
具体实施方式
虽然本公开能容许以许多不同形式的实施例，但是在以下理解的情况下在附图中示出并且在本文中将详细描述其特定实施例：本公开要被视为本公开的原理的示例性说明。不意图将本公开限于特定所说明的实施例。
应当指出的是，尽管在以下各图及其对应描述中，以顶发射式OLED阵列基板为例阐述了本公开，但是如本领域技术人员将容易领会到的，本公开同样适用于底发射式OLED阵列基板。
如图1所示，根据本公开的实施例的OLED阵列基板的子像素单元的横截面示意图。子像素单元包括依次设置在衬底基板5上的第一电极1、有机发光层6和第二电极2，以及依次设置在第二电极2上的有机膜层3和半反射镜层4。第一电极1包括反射层，例如第一电极1可以是多层堆叠结构，其中在第一电极1的最远离出光侧的一个或多个层为反射层，其可以由诸如银或铝之类的金属制成。可替换地，第一电极1也可以是单层反射层，其同样可以由诸如银或铝之类的金属 制成。第二电极2为透明电极(例如，由铟锡氧化物(ITO)制成)。半反射镜层4与第一电极1之间的结构构成微腔结构100。根据本实施例，OLED阵列基板引入微腔结构，可以提高色纯度，增强发光效率和亮度，进而得到对比度高、低能耗的显示装置。同时，经过微腔结构所发出的光具有较好的方向性，且色纯度较高，因此无需后续的黑矩阵制程，在节约成本的同时极大地提高了显示装置的开口率。进一步的，该有机膜层由低温固化材料形成，该材料的固化温度不超过大约100℃。选择低温固化材料形成有机膜层3可以避免有机发光层6在高温工艺中受到破坏。其中，低温固化材料包括环氧树脂、丙烯酸树脂、酚醛树脂、聚氨酯中的一种或多种。
微腔结构100根据微腔结构100的有效腔长、发射峰的半高宽和法布里-泊罗公式来设计。具体地，微腔结构的有效腔长L(λ)通过下式计算：
Figure PCTCN2017070955-appb-000009
其中，λ为发光部发出的光的谐振波长，R为第一电极的有效反射率，Δn为形成半反射镜层4与第一电极1的两种材料的折射率差，nj和dj分别为第j层材料的折射率和厚度，Φm为光在半反射镜层4上的相移；项
Figure PCTCN2017070955-appb-000010
需要计及夹在第一电极1与半反射镜层4之间的所有层，以图1所示的子像素单元为例，包括有机发光层6、第二电极2和有机膜层3。需要说明的是，如本文所使用的术语“有效腔长”是指微腔结构100在反射意义上的有效长度，而不是简单地为构成微腔结构100的各层厚度的简单叠加。
发射峰的半高宽Δλ通过下式计算：
Figure PCTCN2017070955-appb-000011
其中，λ为发光部发出的光的谐振波长，R为第一电极1的有效反射率，L(λ)为根据公式(1)计算得到的微腔结构的有效腔长，R1、R2分别为第一电极1和半反射镜层4的镜面反射率。
法布里-泊罗公式为：
Figure PCTCN2017070955-appb-000012
其中，m为非负整数(例如1、2等)；
Figure PCTCN2017070955-appb-000013
和
Figure PCTCN2017070955-appb-000014
为第一电极1和半反射镜层4的反射相移，单位是弧度；nj和dj分别是第j层的折射率和厚度；
Figure PCTCN2017070955-appb-000015
是从垂直于发光器件平面的法线起测定的第j层中光的角度；λ是发光部发出的光的谐振波长；项
Figure PCTCN2017070955-appb-000016
需要计及夹在第一电极1与半反射镜层4之间的所有层，同样以图1所示的子像素单元为例，包括有机发光层6、第二电极2和有机膜层3。
通过在上述公式(3)中所限定的有机膜层厚度的取值范围中调节有机膜层的厚度，可以不断优化有效腔长和发射峰的半高宽，从而设计出三个未知量的最优值。
图2示出根据本公开的实施例的有机发光二极管阵列基板的横截面示意图。如图所示，阵列基板包括多个像素单元(在图2中示意性地图示了一个像素单元)，每一个像素单元包括多个子像素单元200，每一个像素单元200包括布置在半反射镜层4之上的彩膜层7-1、7-2、7-3，其中不同颜色的子像素单元200的彩膜层7-1、7-2、7-3的颜色不同。根据本实施例将彩膜层直接制作在微腔结构100上，可以提高彩膜层与子像素单元的对位精度。同时，减少了OLED阵列基板的厚度。
如图所示，不同颜色的彩膜层7-1、7-2、7-3对应的子像素单元200的有机膜层3具有不同厚度。以每一个像素单元包括红色(R)子像素单元、绿色(G)子像素单元和蓝色(B)子像素单元为例。在微腔结构中，满足谐振条件波长的光由于干涉而加强。通过微腔结构中的反射，无方向的光线被选择成为具有方向性的光线，从而导致该特定方向上的光强度增强。因此，有机膜层的厚度要与对应的子像素单元对应，例如，对应于红色子像素单元的有机膜层最厚，对应于绿色子像素单元的有机膜层次之，并且对应于蓝色子像素单元的有机膜层最薄。
半反射镜层4由布置有多个孔的金属层形成(在图2中未示出)。孔的大小和密度可以根据所需要的出光方向来设计，也就是说，孔的大小和密度决定了所要加强的光的方向。作为结果，孔的大小和密度 与有机膜层的厚度有关。在实践中，可以根据孔的大小和密度来设计有机膜层的厚度，或者反之亦然。多个孔可以在金属层中规则排列。同样地，孔的排列方式可以根据所需要的出光方向来设计。
如图2所示，子像素单元200还包括布置在第二电极2和有机膜层3之间的封装层8，该封装层8可以充当平坦层的作用。OLED阵列基板还包括布置在各个子像素单元200的第一电极1之上的像素定义层10。在这种情况下，微腔结构100的设计还需要计及封装层8。
可选地，有机发光层6可以包括电子注入层(未示出)。此时，微腔结构100的设计还需要计及电子注入层。
进一步地，如图2所示，OLED阵列基板还包括布置在各个子像素单元的彩膜层7上的二次封装层9。可选地，二次封装层9可以包括丙烯酸酯类粘合剂和玻璃盖板。二次封装层9的厚度为大约3.0-3.5μm。
在一种示例设计中，半反射镜层4的厚度为大约100-150nm，第一电极1的厚度为大约90-100nm，像素定义层10的厚度可以为大约1.0-1.5μm，有机发光层6的厚度为大约200-300nm，第二电极2的厚度为大约100-150nm，封装层8的厚度可以为大约3.0-3.5μm。由此可以计算出有机膜层3在对应于不同颜色子像素的区域中的厚度。根据本实施例，OLED阵列基板引入微腔结构，可以提高色纯度，增强发光效率和亮度，进而得到对比度高、低能耗的显示装置。同时，经过微腔结构所发出的光具有较好的方向性，且色纯度较高，因此无需后续的黑矩阵制程，在节约成本的同时极大地提高了显示装置的开口率。
图3图示了根据实施例的上述有机发光二极管阵列基板的制造方法的流程图。如图3所示，该方法包括以下步骤。
S1：采用标准方法清洗透明玻璃衬底；
S2：在清洗后的透明玻璃衬底上制作薄膜晶体管层，从而形成阵列基板；
S3：在所制备的阵列基板上，通过溅射、旋涂、曝光显影、蚀刻剥离等方式形成图案化的第一电极，该第一电极具有较好的反射性(例如包括金属层)，并且厚度可以为大约90-100nm；
S4：通过旋涂和曝光显影的方式获得图案化的像素定义层，其厚度可以为大约1.0-1.5μm；
S5：通过蒸镀过程制备有机发光层，其厚度可以为大约200-300nm；
S6：通过溅射、旋涂、曝光显影、蚀刻剥离等方式获得图案化的第二电极，该第二电极具有较好的透过性(例如由铟锡氧化物(ITO)等透明导电材料制成)，并且厚度可以为大约100-150nm；
S7：制作封装层，其厚度可以为大约3.0-3.5μm；
S8：通过旋涂和半阶调掩膜工艺曝光显影的方式获得厚度不一、图案化的有机膜层，其中，为了保护发光层不受损坏，有机膜层选用低温固化材料，且该步骤的工艺温度需要小于大约100℃，有机膜层的厚度通过以上所提到的方式计算；
S9：通过溅射、旋涂、曝光显影、蚀刻剥离等方式获得图案化的半反射镜层，该半反射镜层的一部分具有较好的透光性，另一部分具有较好的反射性，并且厚度可以为大约100-150nm；
S10：制作彩膜层，彩膜层与子像素单元一一对应；
S11：制作二次封装层，其厚度可以为大约3.0-3.5μm。
获得半反射镜层的步骤S9可以包括如下子步骤：
S91：在有机膜层上溅射金属材料；以及
S92：通过图案化工艺在金属层上形成多个孔。
虽然已经在附图和前述描述中详细图示和描述了本公开，但是这样的图示和描述要被视为说明性或示例性而非限制性的；本公开不限于所公开的实施例。本领域技术人员在实践所要求保护的公开时，通过研究附图、公开内容和随附权利要求，能够理解和实现对所公开的实施例的其它变型。例如，以上描述的方法不要求以所描述的特定次序或顺序的次序来实现合期望的结果。可以提供其它步骤，或者可以从所描述的方法中除去步骤，并且其它组件可以添加到所描述的装置或者从所描述的装置移除。其它实施例可以在本公开的范围内。

Claims (19)

  1. 一种OLED阵列基板，包括多个像素单元，每一个像素单元包括多个子像素单元，每个所述子像素单元均包括发光部，每个发光部具有远离出光侧的第一电极、靠近出光侧的第二电极和夹在第一电极和第二电极之间的有机发光层，其中，所述子像素单元还包括在第二电极的出光侧上依次设置的有机膜层和半反射镜层，所述第一电极包括反射层，所述第二电极为透明电极，所述第一电极与所述半反射镜层之间的结构构成微腔结构，并且每一个像素单元的不同颜色的子像素单元的有机膜层具有不同厚度。
  2. 根据权利要求1所述的OLED阵列基板，其中，所述有机膜层的厚度根据所述微腔结构的有效腔长、发射峰的半高宽和法布里-泊罗公式设计，
    其中，
    微腔结构的有效腔长L(λ)通过下式计算：
    Figure PCTCN2017070955-appb-100001
    其中，λ为对应发光部发出的光的谐振波长，R为第一电极的有效反射率，Δn为形成半反射镜层与第一电极的两种材料的折射率差，nj和dj分别为第j层材料的折射率和厚度，Φm为光在半反射镜层上的相移；项
    Figure PCTCN2017070955-appb-100002
    计及夹在所述第一电极与所述半反射镜层之间的所有层，
    发射峰的半高宽Δλ通过下式计算：
    Figure PCTCN2017070955-appb-100003
    其中，λ为对应发光部发出的光的谐振波长，R为第一电极的有效反射率，L(λ)为根据公式(1)计算得到的微腔结构的有效腔长，R1、R2分别为第一电极和半反射镜层的镜面反射率，
    法布里-泊罗公式为：
    Figure PCTCN2017070955-appb-100004
    其中，m为非负整数；
    Figure PCTCN2017070955-appb-100005
    和
    Figure PCTCN2017070955-appb-100006
    为第一电极和半反射镜层的反射相移，单位是弧度；nj和dj分别是第j层的折射率和厚度；
    Figure PCTCN2017070955-appb-100007
    是从垂直于发光部平面的法线起测定的第j层中光的角度；λ是发光部发出的光的谐振波长；项
    Figure PCTCN2017070955-appb-100008
    计及夹在所述第一电极与所述半反射镜层之间的所有层。
  3. 根据权利要求1所述的OLED阵列基板，其中子像素单元还包括布置在所述半反射镜层的出光侧上的彩膜层，并且像素单元的不同颜色的子像素单元的彩膜层的颜色不同。
  4. 根据权利要求1所述的OLED阵列基板，其中，所述有机膜层由低温固化材料形成，所述低温固化材料的固化温度不高于大约100℃。
  5. 根据权利要求4所述的OLED阵列基板，其中，低温固化材料包括环氧树脂、丙烯酸树脂、酚醛树脂、聚氨酯中的一种或多种。
  6. 根据权利要求1所述的OLED阵列基板，其中，所述半反射镜层的厚度为大约100-150nm。
  7. 根据权利要求1所述的OLED阵列基板，其中，所述半反射镜层为布置有规则排列的多个孔的金属层。
  8. 根据权利要求1-7中任一项所述的OLED阵列基板，其中，所述第一电极的厚度为大约90-100nm。
  9. 根据权利要求1-7中任一项所述的OLED阵列基板，其中，所述第二电极的厚度为大约100-150nm。
  10. 根据权利要求1所述的OLED阵列基板，其中子像素单元还包括布置在所述第二电极和所述有机膜层之间的封装层，所述封装层的厚度为大约3.0-3.5μm，并且所述微腔结构还包括所述封装层。
  11. 根据权利要求1所述的OLED阵列基板，还包括布置在各个子像素单元的所述第一电极与所述有机发光层之间的像素定义层，其中所述像素定义层的厚度为大约1.0-1.5μm。
  12. 根据权利要求1所述的OLED阵列基板，其中，所述有机发光层的厚度为大约200-300nm。
  13. 根据权利要求3所述的OLED阵列基板，还包括布置在各个子像素单元的所述彩膜层的出光侧上的二次封装层，所述二次封装层的厚度为大约3.0-3.5μm。
  14. 根据权利要求13所述的OLED阵列基板，其中，所述二次封装层包括丙烯酸酯类粘合剂和玻璃盖板。
  15. 一种OLED显示面板，包括权利要求1-14中任一项所述的OLED阵列基板。
  16. 一种OLED显示装置，包括权利要求15所述的OLED显示面板。
  17. 一种OLED阵列基板的制造方法，所述OLED阵列基板包括多个像素单元，每一个像素单元包括多个子像素单元；所述制造方法包括：沿OLED阵列基板的出光方向在衬底基板上依次形成对应于每个子像素单元的第一电极、有机发光层、第二电极、有机膜层和半反射镜层，
    其中，所述第一电极包括反射层，所述第二电极为透明电极，所述第一电极与所述半反射镜层之间的结构构成微腔结构；并且每一个像素单元的不同颜色的子像素单元的有机膜层具有不同厚度。
  18. 权利要求17的制造方法，其中各个子像素单元的所述有机膜层通过以下步骤一体化形成：
    旋涂低温固化有机材料；
    使用半色调掩膜板，通过曝光和显影形成厚度不均匀的有机膜层。
  19. 权利要求18的方法，其中在所述形成有机膜层的步骤期间，制程温度小于大约100℃。
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