WO2017108714A1 - Injektor aus silizium für die halbleiterindustrie - Google Patents

Injektor aus silizium für die halbleiterindustrie Download PDF

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Publication number
WO2017108714A1
WO2017108714A1 PCT/EP2016/081788 EP2016081788W WO2017108714A1 WO 2017108714 A1 WO2017108714 A1 WO 2017108714A1 EP 2016081788 W EP2016081788 W EP 2016081788W WO 2017108714 A1 WO2017108714 A1 WO 2017108714A1
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WO
WIPO (PCT)
Prior art keywords
tube
injector
injector according
profile
pipe
Prior art date
Application number
PCT/EP2016/081788
Other languages
English (en)
French (fr)
Inventor
Walter Nadrag
Enrico Nadrag
Original Assignee
Sico Technology Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sico Technology Gmbh filed Critical Sico Technology Gmbh
Priority to KR1020187020897A priority Critical patent/KR20180095073A/ko
Priority to DE212016000248.1U priority patent/DE212016000248U1/de
Priority to JP2018552122A priority patent/JP2019503086A/ja
Priority to EP16816680.9A priority patent/EP3394317A1/de
Priority to US16/065,227 priority patent/US20190055652A1/en
Publication of WO2017108714A1 publication Critical patent/WO2017108714A1/de

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Definitions

  • the invention relates to an injector having the features of the introductory part of claim 1.
  • wafers When manufacturing wafers, wafers are placed in brackets (boats) and placed in treatment rooms (ovens) where they are treated with gas.
  • the gas that will be treated with the wafer is placed in the oven via an injector, which is normally a curved one
  • Fig. 2 of US 2006/0185589 AI it can be seen that the injector has a circular cross-section bore and is formed from half shells.
  • the outer shape of the tube is rectangular, for example.
  • Fig. 11 of US 2006/0185589 AI it can be seen that the free end of the tube is closed and that in the tube outlet openings are provided.
  • the injector is composed of half-shells, which in the
  • the apparatus described includes a hollow member connected to an injector which communicates with an input port and a reaction chamber containing the substrate.
  • Material can consist of the components of the device for the CVD method.
  • US 2008/0286981 AI deals with a method for Treating semiconductor wafers in a process chamber, wherein on the wafer in situ titanium nitride and silicon is deposited.
  • injectors are provided in the process chamber in the embodiments shown in FIGS. 4 and 5 of US 2008/0286981 AI, is introduced by the gas. Materials from which the injectors may consist are not disclosed.
  • FIG. 8 of US 2008/0286981 A1 shows that injectors can have an oblong-oval cross-section.
  • FIG. 7 also shows that the injectors can have lateral outlet openings. Such outlet openings are also shown in FIG. 8.
  • US 2008/0286981 AI contains no information on what material the injectors can be made.
  • EP 0 582 444 A1 relates to a device for the CVD method, with which SiC of high purity is produced.
  • the device comprises three injector tubes, the construction of which is shown in FIG. It can be seen from EP 0 582 444 A1 that three concentric tubes which define annular channels are contained in the injector tubes. Only the middle channel is used for supplying gas into a chamber. The outer channels serve to circulate cooling medium. Also, EP 0 582 444 AI contains no information about the material from which the injectors can be made.
  • Particles which are undesirable in processes in the semiconductor industry, are produced by the chipping.
  • the invention has for its object to provide an injector available that does not cause the problems described. This object is achieved according to the invention with an injector having the features of claim 1.
  • injectors according to the invention are the subject of the dependent claims.
  • the injector according to the invention as a tube made of silicon
  • Pipe allows the injector from several pieces of pipe
  • the silicon injector according to the invention is not necessarily a straight tube. Rather, the injector according to the invention may also be a bent or angled tube.
  • the profile of the injector in an exemplary embodiment is other than circular.
  • the profile of the injector in particular in cross section, rectangular, oblong oval, triangular or
  • the preferred, inventive design of the injector with its non-circular, so non-circular profile allows more than one cavity (channel) to be provided in the injector for supplying gas for the treatment of the wafer.
  • Two channels have the advantage that alternatively different gases can be supplied. If one of the channels is misplaced, the other channel can be used to feed gas into the oven
  • Treating wafers used in boats can be used.
  • profile is understood in the present case to mean the external shape of the tube used according to the invention as an injector.
  • out of round includes all profiles which are non-circular in cross-section.
  • An injector 1 made of silicon according to the invention is designed as a tube 2 which may be straight, bent or angled (for example angled at 85-95 °).
  • the tube 2 has a substantially rectangular profile with convexly curved narrow surfaces 3.
  • a channel 4 is provided with a circular cross-section.
  • the profile of the tube 2 forming the injector 1 is rectangular.
  • a serving as an injector 1 tube 2 is shown, in which two channels 4 are provided.
  • the profile of the tube 2 is elongated, wherein the
  • Narrow surfaces 3 of the tube which are curved convex over
  • Fig. 4 shows a tube 2, which can be used as an injector 1, whose profile is similar to the profile shown in Fig. 3, wherein in the tube 2 a cross-sectionally elongated channel 4 is provided.
  • FIG. 5 shows a modification of that shown in FIG.
  • Embodiment of a tube 2 which can be used as an injector 1, wherein in the region of the channel 4 in the
  • the profile of the tube 2 shown in Fig. 5 can also be considered that of a circular tube with two outwardly projecting ribs
  • Fig. 6 shows an embodiment of a tube 2, which as
  • Injector 1 can be used, in which the profile of the tube 2 is an equilateral triangle. Alternatively to a
  • Fig. 7 shows an embodiment of a tube 2, as
  • Injector 1 can be used, the tube 2 a
  • Basic body having a circular cross-section comprises, whose
  • Base body outward stiffening ribs 8 from, so that a star-shaped profile of the tube 2 is present.
  • Stiffening ribs 8 need not be four, but may also be two (see Fig. 5) or three or more than four.
  • Injector 1 forming tube 2 from at least two pipe sections 10 to form .
  • the end surfaces (end faces) of the pipe sections 10 may be made smooth or profiled.
  • the connection of pipe sections 10 together can mechanically and / or as needed
  • FIG. 8 shows a pipe section 10, from which a pipe 2 for an injector 1 according to the invention can be produced by connecting it to further pipe sections 10 (see FIG.
  • the pipe sections 10 of Figs. 8 to 23 may have one of the shapes shown in Figs. 1 to 7 with one or two channels 4.
  • Fig. 10 shows a longitudinal section of a composite of two pipe sections 10 tube 2 for an injector 1, wherein the
  • Fig. 11 shows the tube 2 of Fig. 10 in an exploded view.
  • one end of a pipe section 10 has an annular rib 12 protruding beyond the end surface 11 and forming an annular groove 13 in the end surface 11 of the other
  • Pipe piece 10 engages.
  • Embodiment have opposite end surfaces 11, wherein a protruding ring member 14 in a recess 15 of other tube piece 10 engages (Fig. 14).
  • a pipe piece 10 carries (at least) one end surface 11 thereof
  • Pipe piece 10 engages.
  • Embodiment contribute to their end surfaces 11 part or
  • Figs. 20 and 21 corresponds to that of Figs. 14 and 15 with the proviso that the ring member 14 is shorter and the recess 15 is formed less long.
  • the pipe sections 10 are positively coupled by a keyhole in the wall of a piece of pipe 10, open towards the end surface 1 recess 19 and the other piece of pipe 10 two of its end faces 11 projecting, gegen somn shaped Projections 20 are provided.
  • pipe sections 10 are also considered, which are formed at both ends according to one of the embodiments shown in FIGS. 10 to 23, so that three or more than three pipe sections 10 to form injectors 1 tubes 2 can be assembled and interconnected ,
  • Process chamber is initiated, in particular in the
  • Another advantage of the injector 1 according to the invention is its prolonged duration of use and in addition that the
  • two, three or more than three channels 4 may be provided for the supply of gas.
  • injectors 1 tubes 2 which are also provided with injectors made of quartz glass usual outlet openings for the gas (process gas).
  • an injector 1 which is made of silicon and in processes, in particular processes in the Semiconductor technology that allows gas to be introduced into process chambers.
  • the injector 1 is formed as a pipe 2, which optionally consists of at least two pipe sections 10, are provided in the outlet openings for the gas to be introduced into the process chamber.
  • the tube 2, which serves as an injector 1 at least one channel 4 is provided in the tube 2, which serves as an injector 1, at least one channel 4 is provided.
  • the profile of serving as an injector 1 tube 2 is non-circular, so deviates from a circular profile, with elongated, triangular or star-shaped profile shapes are taken into consideration.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Vorgeschlagen wird ein Injektor (1), der aus Silizium gefertigt ist und der bei Prozessen, insbesondere Prozessen in der Halbleitertechnik, das Einleiten von Gas in Prozesskammern erlaubt. Der Injektor (1) ist als Rohr (2), das gegebenenfalls aus wenigstens zwei Rohrstücken (10) besteht, ausgebildet, in dem Austrittsöffnungen für das in die Prozesskammer einzubringende Gas vorgesehen sind. In dem Rohr (2), das als Injektor 1 dient, ist wenigstens ein Kanal (4) vorgesehen. Das Profil des als Injektor (1) dienenden Rohres (2) ist unrund, weicht also von einem kreisförmigen Profil ab, wobei längliche, dreieckige oder sternförmige Profilformen in Betracht gezogen sind.

Description

Injektor aus Silizium für die Halbleiterindustrie
Die Erfindung betrifft einen Injektor mit den Merkmalen des einleitenden Teils von Anspruch 1.
Beim Herstellen von Wafern werden Wafer in Halterungen (Boote) eingesetzt und in Behandlungsräume (Öfen) eingebracht, in denen sie mit Gas behandelt werden.
Das Gas, mit dem Wafer behandelt werden, wird in den Ofen über einen Injektor, der im Normalfall ein gebogenes oder
gewinkeltes, mit Löchern versehenes Rohr aus Quarzglas ist, eingebracht .
US 2006/0185589 AI beschreibt einen Injektor aus Silizium für Gas, der beim thermischen Behandeln von Halbleiterwafern
eingesetzt werden kann. Den Zeichnungen, beispielsweise Fig. 2 von US 2006/0185589 AI, ist zu entnehmen, dass der Injektor eine im Querschnitt kreisförmige Bohrung aufweist und aus Halbschalen gebildet ist. Die Außenform des Rohres ist beispielsweise rechteckig. Fig. 11 von US 2006/0185589 AI ist zu entnehmen, dass das freie Ende des Rohres verschlossen ist und dass im Rohr Austrittsöffnungen vorgesehen sind. Bei US 2006/0185589 AI ist der Injektor aus Halbschalen zusammengesetzt, was bei den
Bedingungen, unter denen gattungsgemäße Injektoren eingesetzt werden, problematisch ist.
US 5,943,471 A befasst sich vornehmlich mit dem Verdampfen von Feststoffen für ein CVD-Verfahren . Die in US 5,943,471 A
beschriebene Vorrichtung umfasst einen hohlen Bauteil, der mit einem Injektor verbunden ist, der mit einer Eingangsöffnung und einer Reaktionskammer, die das Substrat enthält, kommuniziert. In US 5,943,471 A finden sich keine Angaben, aus welchem
Werkstoff die Bestandteile der Vorrichtung für das CVD-Verfahren bestehen können.
US 2008/0286981 AI befasst sich mit einem Verfahren zum Behandeln von Halbleiterwafern in einer Prozesskammer, wobei auf den Wafer in situ Titannitrid und Silizium abgeschieden wird. Hierzu sind bei den in den Fig. 4 und 5 von US 2008/0286981 AI gezeigten Ausführungsformen in der Prozesskammer Injektoren vorgesehen, durch die Gas eingeleitet wird. Werkstoffe, aus welchen die Injektoren bestehen können, sind nicht geoffenbart. Fig. 8 von US 2008/0286981 AI zeigt, dass Injektoren einen länglich-ovalen Querschnitt aufweisen können. In Fig. 7 ist auch gezeigt, dass die Injektoren seitliche Austrittsöffnungen aufweisen können. Solche Austrittsöffnungen sind auch in Fig. 8 gezeigt. US 2008/0286981 AI enthält keine Angaben, aus welchem Werkstoff die Injektoren gefertigt sein können.
EP 0 582 444 AI betrifft eine Vorrichtung für das CVD-Verfahren, mit der SiC hoher Reinheit hergestellt wird. Die Vorrichtung umfasst drei Injektorrohre, deren Konstruktion in Fig. 3 gezeigt ist. Fig. 3 von EP 0 582 444 AI ist zu entnehmen, dass in den Injektorrohren drei konzentrische Rohre enthalten sind, die ringförmige Kanäle definieren. Ausschließlich der mittlere Kanal wird für das Zuführen von Gas in eine Kammer verwendet. Die äußeren Kanäle dienen für das Zirkulieren von Kühlmedium. Auch EP 0 582 444 AI enthält keine Angaben über den Werkstoff, aus dem die Injektoren hergestellt sein können.
Problematisch bei den bekannten Injektoren aus Quarzglas ist es, dass Ablagerungen, die aufgrund des Behandlungsprozesses auf dem Injektor aus Quarzglas entstehen, aufgrund thermischer
Spannungen abspringen und das ordnungsgemäße Herstellen von Wafern beeinträchtigen können.
Es entstehen durch das Absplittern Partikel (flakings) , die in Prozessen der Halbleiterindustrie nicht erwünscht sind.
Der Erfindung liegt die Aufgabe zugrunde, einen Injektor zur Verfügung zu stellen, der die geschilderten Probleme nicht verursacht . Gelöst wird diese Aufgabe erfindungsgemäß mit einem Injektor, der die Merkmale von Anspruch 1 aufweist.
Bevorzugte und vorteilhafte Ausgestaltungen des
erfindungsgemäßen Injektors sind Gegenstand der Unteransprüche.
Da der erfindungsgemäße Injektor als Rohr aus Silizium
ausgebildet ist, ergeben sich keine thermischen Spannungen, die das Abplatzen von Ablagerungen (flakings) verursachen könnten. Überdies wird mit dem erfindungsgemäßen Injektor das Bilden von Ablagerungen verhindert oder wenigstens verringert.
Die erfindungsgemäße Ausbildung des den Injektor bildenden
Rohres erlaubt es, den Injektor aus mehreren Rohrstücken
zusammenzusetzen, wozu bevorzugt an den Stoßstellen glatte oder profilierte Stirnflächen der Rohrstücke vorliegen, die durch ein Kristallisations-Verfahren und/oder mechanisch miteinander zu einem einen Injektor bildenden Rohr verbunden sind.
Der erfindungsgemäße Injektor aus Silizium ist nicht zwingend ein gerades Rohr. Vielmehr kann der erfindungsgemäße Injektor auch ein gebogenes oder abgewinkeltes Rohr sein.
Um dem erfindungsgemäßen Injektor aus Silizium eine für seinen Einsatz in Öfen zum Behandeln von Wafern mit Behandlungsgas, auch bei erhöhten Temperaturen, hinreichende mechanische
Stabilität zu geben, ist das Profil des Injektors in einer beispielhaften Ausführungsform anders als kreisrund.
Beispielsweise kann das Profil des Injektors, insbesondere im Querschnitt, rechteckig, länglich oval, dreieckig oder
sternförmig ausgebildet sein.
Die bevorzugte, erfindungsgemäße Ausbildung des Injektors mit seinem unrunden, also nicht kreisrunden Profil, erlaubt es, in dem Injektor mehr als einen Hohlraum (Kanal) für das Zuführen von Gas für das Behandeln des Wafer vorzusehen. Zwei Kanäle haben den Vorteil, dass alternativ unterschiedliche Gase zugeführt werden können. Wenn einer der Kanäle verlegt ist, kann der andere Kanal für das Zuführen von Gas in den Ofen zum
Behandeln von Wafern, die in Boote eingesetzt sind, verwendet werden .
Mit dem Begriff "Profil" wird im Vorliegenden die äußere Form des erfindungsgemäß als Injektor verwendeten Rohres verstanden.
Der im Vorliegenden verwendete Begriff "unrund" umfasst alle Profile, die im Querschnitt nicht kreisrund sind.
Weitere Einzelheiten und Merkmale der Erfindung ergeben sich aus der nachstehenden Beschreibung bevorzugter Ausführungsbeispiele anhand der Zeichnungen. Es zeigen:
im Querschnitt unterschiedliche Profile von als
Injektor dienenden Rohren aus Silizium,
ein einzelnes Rohrstück,
einen Injektor aus drei Rohrstücken und teilweise im Schnitt Varianten der Verbindung von Rohrstücken miteinander.
Ein erfindungsgemäßer Injektor 1, der aus Silizium gefertigt ist, ist als Rohr 2 ausgebildet, das gerade, gebogen oder gewinkelt (z.B. um 85 - 95° gewinkelt) sein kann.
Bei der in Fig. 1 gezeigten Ausführungsform eines Injektors 1 aus Silizium hat das Rohr 2 ein im Wesentlichen rechteckiges Profil mit konvex gekrümmten Schmalflächen 3. In dem Rohr 2 ist ein Kanal 4 mit kreisrundem Querschnitt vorgesehen.
Bei der in Fig. 2 gezeigten Ausführungsform ist das Profil des Rohres 2, das den Injektor 1 bildet, rechteckig. In Fig. 3 ist eine Ausführungsform eines als Injektor 1 dienenden Rohres 2 gezeigt, in dem zwei Kanäle 4 vorgesehen sind. Das Profil des Rohres 2 ist länglich, wobei die
Schmalflächen 3 des Rohres, die konvex gekrümmt sind, über
Abrundungen 5 in die Seitenflächen 6 des Rohres 2 übergehen.
Fig. 4 zeigt ein Rohr 2, das als Injektor 1 eingesetzt werden kann, dessen Profil dem in Fig. 3 gezeigte Profil ähnlich ist, wobei im Rohr 2 ein im Querschnitt länglich ausgebildeter Kanal 4 vorgesehen ist.
Fig. 5 zeigt eine Abwandlung der in Fig. 2 gezeigten
Ausführungsform eines Rohres 2, das als Injektor 1 eingesetzt werden kann, bei dem im Bereich des Kanals 4 in den
Seitenflächen 6 des Rohres Ausbauchungen 7 vorgesehen sind. Das in Fig. 5 gezeigte Profil des Rohres 2 kann auch als das eines kreisrunden Rohres mit zwei nach außen stehenden Rippen
verstanden werden.
Fig. 6 zeigt eine Ausführungsform eines Rohres 2, das als
Injektor 1 eingesetzt werden kann, bei der das Profil des Rohres 2 ein gleichseitiges Dreieck ist. Alternativ zu einem
gleichseitigen Dreieck kann das Profil des Rohres 2 ein
gleichschenkeliges oder ein beliebiges Dreieck sein.
Fig. 7 zeigt eine Ausführungsform eines Rohres 2, das als
Injektor 1 eingesetzt werden kann, wobei das Rohr 2 einen
Grundkörper mit kreisrundem Querschnitt umfasst, dessen
Außenfläche zum Kanal 4 im Rohr 2 konzentrisch ausgebildet ist. Im gezeigten Ausführungsbeisspiel stehen vom kreisrunden
Grundkörper nach außen Versteifungsrippen 8 ab, sodass ein sternförmiges Profil des Rohres 2 vorliegt. Die Zahl der
Versteifungsrippen 8 muss nicht vier betragen, sondern kann auch zwei (vgl. Fig. 5) oder drei oder mehr als vier sein.
Im Rahmen der Erfindung ist in Betracht gezogen, das den
Injektor 1 bildende Rohr 2 aus wenigstens zwei Rohrstücken 10 zu bilden .
Die Endflächen (Stirnflächen) der Rohrstücke 10 können glatt oder profiliert ausgeführt sein. Die Verbindung von Rohrstücken 10 miteinander kann mechanisch und/oder bei Bedarf
beispielsweise durch ein Kristallisationsverfahren erfolgen.
Einige vorteilhafte Ausführungsformen, um die mechanische
Verbindungsstabilität zu erhöhen, sind Stufen oder
Fingerausbildungen im Profil der Wandung oder im Profil des gesamten Rohrstückes 10. Auch eine Gewindeverbindung von
Rohrstücken 10 ist möglich.
Fig. 8 zeigt ein Rohrstück 10, aus dem durch Verbinden mit weiteren Rohrstücken 10 (vgl. Fig. 9) ein Rohr 2 für einen erfindungsgemäßen Injektor 1 hergestellt werden kann.
Die Rohrstücke 10 der Fig. 8 bis 23 können eine der in den Fig. 1 bis 7 gezeigte Form des Profils mit einem oder zwei Kanälen 4 haben .
Fig. 10 zeigt im Längsschnitt ein aus zwei Rohrstücken 10 zusammengesetztes Rohr 2 für einen Injektor 1, bei dem die
Rohrstücke 10 stumpf aneinander stoßen.
Fig. 11 zeigt das Rohr 2 der Fig. 10 in auseinandergezogener Darstellung .
Bei dem in den Fig. 12 und 13 gezeigten, aus zwei Rohrstücken 10 zusammengesetzten Rohr 2 weist ein Ende eines Rohrstückes 10 eine über die Endfläche 11 vorstehende Ringrippe 12 auf, die in eine ringförmige Nut 13 in der Endfläche 11 des anderen
Rohrstückes 10 eingreift.
Die Rohrstücke 10 der in den Fig. 14 und 15 gezeigten
Ausführungsform besitzen gegengleich gestufte Endflächen 11, wobei ein vorstehender Ringteil 14 in eine Aussparung 15 des anderen Rohrstückes 10 eingreift (Fig. 14) .
Bei der in den Fig. 16 und 17 gezeigten Ausführungsform trägt ein Rohrstück 10 an seiner Endfläche 11 (wenigstens) einen
Vorsprung 16, der in eine zur Endfläche 11 des anderen
Rohrstückes 10 hin offene Ausnehmung 17 in der Wand des
Rohrstückes 10 eingreift.
Die Rohrstücke 10 der in den Fig. 18 und 19 gezeigten
Ausführungsform tragen an ihren Endflächen 11 teil- oder
halbkreisförmig gekrümmte Ansätze 18, die einander bei
miteinander verbundenen Rohrstücken 10 zu einem geschlossenes Ring (Fig. 18) ergänzen.
Die in den Fig. 20 und 21 gezeigte Ausführungsform entspricht jener der Fig. 14 und 15 mit der Maßgabe, dass der Ringteil 14 kürzer und die Aussparung 15 weniger lang ausgebildet ist.
Bei der in den Fig. 22 und 23 gezeigten Ausführungsform sind die Rohrstücke 10 formschlüssig gekuppelt, indem in der Wand von einem Rohrstück 10 eine schlüssellochförmige, zur Endfläche 1 hin offene Ausnehmung 19 und am anderen Rohrstück 10 zwei von dessen Endflächen 11 abstehende, gegengleich geformte Vorsprünge 20 vorgesehen sind.
Wenngleich die in den Fig. 10 bis 23 gezeigten Rohrstücke 10 nur an jeweils einem Ende das Verbinden von Rohrstücken 10
erlaubende Ausgestaltungen aufweisen, sind auch Rohrstücke 10 in Betracht gezogen, die an beiden Enden gemäß einer der Fig. 10 bis 23 gezeigten Ausführungsformen ausgebildet sind, so dass drei oder mehr als drei Rohrstücke 10 zu Injektoren 1 bildenden Rohren 2 zusammengesetzt und miteinander verbunden werden können .
Auch bei formschlüssig ineinandergreifenden Rohrstücken 10 (Fig. 12 bis 23) ist erfindungsgemäß in Betracht gezogen, dass die zum Rohr 2 des Injektors 1 zusammengesetzten Rohrstücke 10 miteinander durch ein Kristallisationsverfahren verbunden sind.
Beim Verwenden eines erfindungsgemäßen Injektors 1 aus Silizium bei Prozessen, bei welchen Gas zum Behandeln in eine
Prozesskammer eingeleitet wird, insbesondere in der
Halbleitertechnik im Zuge des Herstellens von Chips enthaltenden Wafern, ergibt sich - anders als bei bekannten, aus Quarzglas bestehenden Injektoren - nicht mehr das Problem des Entstehens von Partikeln (flakings) .
Insbesondere hat sich auch als vorteilhaft herausgestellt, dass beim Verwenden von erfindungsgemäßen Injektoren 1 weniger
Verunreinigungen und Partikelbildungen auftreten.
Ein weiterer Vorteil des erfindungsgemäßen Injektors 1 ist dessen verlängerte Einsatzdauer und zusätzlich, dass der
Behandlungsprozess sauberer wird.
Durch die bevorzugte äußere Form des Profils des als Injektor 1 verwendeten Rohres 2, die nicht kreisrund ist, wird die
Stabilität des Injektors 1 erhöht.
Wie bereits erwähnt und beispielsweise in Fig. 3 gezeigt, können bei Bedarf in dem als Injektor 1 verwendeten Rohr 2 mehrere, beispielsweise zwei, drei oder mehr als drei Kanäle 4 für das Zuführen von Gas vorgesehen sein.
Obwohl in den Zeichnungen nicht gezeigt, sind in den
erfindungsgemäß als Injektoren 1 eingesetzten Rohren 2 die auch bei Injektoren aus Quarzglas üblichen Austrittsöffnungen für das Gas (Prozessgas) vorgesehen.
Zusammenfassend kann ein Ausführungsbeispiel der Erfindung wie folgt beschrieben werden:
Vorgeschlagen wird ein Injektor 1, der aus Silizium gefertigt ist und der bei Prozessen, insbesondere Prozessen in der Halbleitertechnik, das Einleiten von Gas in Prozesskammern erlaubt. Der Injektor 1 ist als Rohr 2, das gegebenenfalls aus wenigstens zwei Rohrstücken 10 besteht, ausgebildet, in dem Austrittsöffnungen für das in die Prozesskammer einzubringende Gas vorgesehen sind. In dem Rohr 2, das als Injektor 1 dient, ist wenigstens ein Kanal 4 vorgesehen. Das Profil des als Injektor 1 dienenden Rohres 2 ist unrund, weicht also von einem kreisförmigen Profil ab, wobei längliche, dreieckige oder sternförmige Profilformen in Betracht gezogen sind.

Claims

Ansprüche :
1. Injektor (1) für das Zuführen von Gas in eine
Prozesskammer, umfassend ein Rohr (2), in dem
Austrittsöffnungen für das Gas vorgesehen sind, wobei das als Injektor (1) dienende Rohr (2) aus Silizium besteht, dadurch gekennzeichnet, dass das Rohr (2) einteilig
ausgebildet oder aus wenigstens zwei jeweils einteiligen Rohrstücken (10) zu dem Rohr (2) zusammengesetzt ist.
2. Injektor nach Anspruch 1, dadurch gekennzeichnet, dass das Profil des als Injektor (1) dienenden Rohres (2) unrund ist, indem es von einem kreisförmigen Profil abweicht.
3. Injektor nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass in dem Rohr (2) wenigstens ein Kanal (4) für das Gas vorgesehen ist.
4. Injektor nach einem der Ansprüche 1 bis 3, dadurch
gekennzeichnet, dass im Rohr (2) zwei Kanäle (4) für das Gas, die zueinander parallel verlaufend angeordnet sind, vorgesehen sind.
5. Injektor nach einem der Ansprüche 1 bis 4, dadurch
gekennzeichnet, dass das Profil des als Injektor (1) dienenden Rohres (2) rechteckig ist.
6. Injektor nach Anspruch 5, dadurch gekennzeichnet, dass die Schmalseiten (3) des Rohres (2) konvex gekrümmt sind.
7. Injektor nach Anspruch 5 oder 6, dadurch gekennzeichnet, dass die Schmalseiten (3) des Rohres (2) über Krümmungen (5) in die Seitenflächen (6) des Rohres (2) übergehen.
8. Injektor nach einem der Ansprüche 1 bis 4, dadurch
gekennzeichnet, dass das als Injektor (1) dienende Rohr (2) einen Grundkörper aufweist, der ein konzentrisch zum Kanal (4) im Rohr (2) gekrümmtes Profil aufweist, und dass vom Grundkörper nach außen wenigstens zwei Rippen (8) abstehen.
9. Injektor nach Anspruch 8, dadurch gekennzeichnet, dass die Rippen (8) einander diametral gegenüberliegend vorgesehen sind .
10. Injektor nach Anspruch 8 oder 9, dadurch gekennzeichnet, dass genau zwei Rippen (8) vorgesehen sind.
11. Injektor nach Anspruch 8 oder 9, dadurch gekennzeichnet, dass drei, vier oder mehr als vier Rippen (8) vorgesehen sind .
12. Injektor nach einem der Ansprüche 2 bis 11, dadurch
gekennzeichnet, dass das als Injektor (1) dienende Rohr (2) ein dreieckförmiges Profil aufweist.
13. Injektor nach einem der Ansprüche 3 bis 12, dadurch
gekennzeichnet, dass der wenigstens eine Kanal (4) für das Gas eine längliche Querschnittsform aufweist.
14. Injektor nach einem der Ansprüche 1 bis 13, dadurch
gekennzeichnet, dass das als Injektor (1) dienende Rohr (2) aus wenigstens zwei Rohrstücken (10) zusammengesetzt ist.
15. Injektor nach Anspruch 14, dadurch gekennzeichnet, dass
Rohrstücke (10) miteinander zu einem Rohr (2) verbunden sind .
16. Injektor nach Anspruch 14 oder 15, dadurch gekennzeichnet, dass die Rohrstücke (10) im Bereich einer ihrer Endflächen (11) für eine formschlüssige Verbindung gegengleich
ausgebildet sind.
PCT/EP2016/081788 2015-12-22 2016-12-19 Injektor aus silizium für die halbleiterindustrie WO2017108714A1 (de)

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KR20180095073A (ko) 2018-08-24
US20190055652A1 (en) 2019-02-21
DE212016000248U1 (de) 2018-07-31
AT518081A4 (de) 2017-07-15
AT518081B1 (de) 2017-07-15
EP3394317A1 (de) 2018-10-31
JP2019503086A (ja) 2019-01-31

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