WO2017047011A1 - Procédé de montage d'élément électroluminescent - Google Patents

Procédé de montage d'élément électroluminescent Download PDF

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Publication number
WO2017047011A1
WO2017047011A1 PCT/JP2016/003914 JP2016003914W WO2017047011A1 WO 2017047011 A1 WO2017047011 A1 WO 2017047011A1 JP 2016003914 W JP2016003914 W JP 2016003914W WO 2017047011 A1 WO2017047011 A1 WO 2017047011A1
Authority
WO
WIPO (PCT)
Prior art keywords
emitting element
layer
substrate
light emitting
mounting
Prior art date
Application number
PCT/JP2016/003914
Other languages
English (en)
Japanese (ja)
Inventor
順也 石崎
翔吾 古屋
Original Assignee
信越半導体株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 信越半導体株式会社 filed Critical 信越半導体株式会社
Priority to JP2017540470A priority Critical patent/JP6575603B2/ja
Priority to CN201680042450.4A priority patent/CN107851699B/zh
Publication of WO2017047011A1 publication Critical patent/WO2017047011A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

La présente invention concerne un procédé de montage d'un élément électroluminescent, comprenant : l'emploi d'une croissance épitaxiale pour développer et former une première couche semi-conductrice, une couche active, une seconde couche semi-conductrice et une couche tampon successivement sur un substrat de départ à l'aide d'un matériau qui est en accord de maille avec le substrat de départ ; l'emploi d'une croissance épitaxiale pour former, sur la couche tampon, une couche de fenêtre/substrat de support à l'aide d'un matériau qui n'est pas en accord de maille avec le substrat de départ ; l'élimination du substrat de départ ; la formation d'une première électrode ohmique sur la première couche semi-conductrice ; la formation d'une partie retirée partielle faisant apparaître la seconde couche semi-conductrice, la couche tampon ou la couche de fenêtre/substrat de support, afin de produire un échelon ; la formation d'une seconde électrode ohmique dans la partie retirée ; la fabrication d'une puce d'élément électroluminescent par séparation d'un élément électroluminescent dans lequel les première et seconde électrodes ohmiques sont formées ; et le montage à puce retournée de la puce d'élément électroluminescent sur un substrat de montage de telle manière que le côté de la puce d'élément électroluminescent sur lequel les première et seconde électrodes ohmiques sont formées est le plus proche du substrat de montage. La présente invention procure ainsi un procédé de montage d'un élément électroluminescent avec lequel il est possible de monter facilement une puce d'élément électroluminescent même s'il existe un grand échelon entre les première et seconde électrodes ohmiques.
PCT/JP2016/003914 2015-09-15 2016-08-29 Procédé de montage d'élément électroluminescent WO2017047011A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017540470A JP6575603B2 (ja) 2015-09-15 2016-08-29 発光素子の実装方法
CN201680042450.4A CN107851699B (zh) 2015-09-15 2016-08-29 发光组件的安装方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-182133 2015-09-15
JP2015182133 2015-09-15

Publications (1)

Publication Number Publication Date
WO2017047011A1 true WO2017047011A1 (fr) 2017-03-23

Family

ID=58288455

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2016/003914 WO2017047011A1 (fr) 2015-09-15 2016-08-29 Procédé de montage d'élément électroluminescent

Country Status (4)

Country Link
JP (1) JP6575603B2 (fr)
CN (1) CN107851699B (fr)
TW (1) TWI702733B (fr)
WO (1) WO2017047011A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112993138A (zh) * 2020-10-22 2021-06-18 重庆康佳光电技术研究院有限公司 芯片基板及其制作方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6274399B1 (en) * 1998-06-05 2001-08-14 Lumileds Lighting, U.S. Llc Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices
JP2006352089A (ja) * 2005-04-05 2006-12-28 Philips Lumileds Lightng Co Llc 温度依存性を低減したＡｌＩｎＧａＰのＬＥＤ
JP2007335462A (ja) * 2006-06-12 2007-12-27 Stanley Electric Co Ltd 半導体複合素子およびその製造方法
JP2011091443A (ja) * 2006-03-17 2011-05-06 Shogen Koden Kofun Yugenkoshi 発光ダイオードの製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001015803A (ja) * 1999-06-29 2001-01-19 Showa Denko Kk ＡｌＧａＩｎＰ発光ダイオード
TWI251357B (en) * 2005-06-21 2006-03-11 Epitech Technology Corp Light-emitting diode and method for manufacturing the same
JP5407359B2 (ja) * 2009-01-23 2014-02-05 信越半導体株式会社 発光ダイオード

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6274399B1 (en) * 1998-06-05 2001-08-14 Lumileds Lighting, U.S. Llc Method of strain engineering and impurity control in III-V nitride semiconductor films and optoelectronic devices
JP2006352089A (ja) * 2005-04-05 2006-12-28 Philips Lumileds Lightng Co Llc 温度依存性を低減したＡｌＩｎＧａＰのＬＥＤ
JP2011091443A (ja) * 2006-03-17 2011-05-06 Shogen Koden Kofun Yugenkoshi 発光ダイオードの製造方法
JP2007335462A (ja) * 2006-06-12 2007-12-27 Stanley Electric Co Ltd 半導体複合素子およびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112993138A (zh) * 2020-10-22 2021-06-18 重庆康佳光电技术研究院有限公司 芯片基板及其制作方法
CN112993138B (zh) * 2020-10-22 2022-02-25 重庆康佳光电技术研究院有限公司 芯片基板及其制作方法

Also Published As

Publication number Publication date
TWI702733B (zh) 2020-08-21
CN107851699A (zh) 2018-03-27
CN107851699B (zh) 2019-06-04
TW201724551A (zh) 2017-07-01
JPWO2017047011A1 (ja) 2018-04-26
JP6575603B2 (ja) 2019-09-18

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