Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D1/00—Processes for applying liquids or other fluent materials
  • B05D1/60—Deposition of organic layers from vapour phase
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
  • B32B7/02—Physical, chemical or physicochemical properties
  • B32B7/027—Thermal properties
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B15/00—Layered products comprising a layer of metal
  • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
  • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
  • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
  • B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
  • B05D3/141—Plasma treatment
  • B05D3/142—Pretreatment
  • B05D3/144—Pretreatment of polymeric substrates
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B15/00—Layered products comprising a layer of metal
  • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
  • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
  • B32B15/085—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyolefins
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B15/00—Layered products comprising a layer of metal
  • B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
  • B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
  • B32B15/09—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyesters
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B15/00—Layered products comprising a layer of metal
  • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B27/00—Layered products comprising a layer of synthetic resin
  • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
  • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B27/00—Layered products comprising a layer of synthetic resin
  • B32B27/14—Layered products comprising a layer of synthetic resin next to a particulate layer
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B27/00—Layered products comprising a layer of synthetic resin
  • B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B27/00—Layered products comprising a layer of synthetic resin
  • B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
  • B32B27/281—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyimides
• • B—PERFORMING OPERATIONS; TRANSPORTING
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  • B32B27/00—Layered products comprising a layer of synthetic resin
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  • B32B27/285—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polyethers
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B27/00—Layered products comprising a layer of synthetic resin
  • B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
  • B32B27/286—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42 comprising polysulphones; polysulfides
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
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  • B32B27/00—Layered products comprising a layer of synthetic resin
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• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
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  • B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
  • B32B27/302—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising aromatic vinyl (co)polymers, e.g. styrenic (co)polymers
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
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  • B32B27/304—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising vinyl halide (co)polymers, e.g. PVC, PVDC, PVF, PVDF
• • B—PERFORMING OPERATIONS; TRANSPORTING
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• • B—PERFORMING OPERATIONS; TRANSPORTING
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• • B—PERFORMING OPERATIONS; TRANSPORTING
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• • B—PERFORMING OPERATIONS; TRANSPORTING
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• • B—PERFORMING OPERATIONS; TRANSPORTING
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• • B—PERFORMING OPERATIONS; TRANSPORTING
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• • B—PERFORMING OPERATIONS; TRANSPORTING
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• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/08—Oxides
  • C23C14/081—Oxides of aluminium, magnesium or beryllium
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
  • C23C14/14—Metallic material, boron or silicon
  • C23C14/20—Metallic material, boron or silicon on organic substrates
  • C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
  • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
  • C23C14/34—Sputtering
• • E—FIXED CONSTRUCTIONS
  • E04—BUILDING
  • E04B—GENERAL BUILDING CONSTRUCTIONS; WALLS, e.g. PARTITIONS; ROOFS; FLOORS; CEILINGS; INSULATION OR OTHER PROTECTION OF BUILDINGS
  • E04B1/00—Constructions in general; Structures which are not restricted either to walls, e.g. partitions, or floors or ceilings or roofs
  • E04B1/62—Insulation or other protection; Elements or use of specified material therefor
  • E04B1/74—Heat, sound or noise insulation, absorption, or reflection; Other building methods affording favourable thermal or acoustical conditions, e.g. accumulating of heat within walls
  • E04B1/76—Heat, sound or noise insulation, absorption, or reflection; Other building methods affording favourable thermal or acoustical conditions, e.g. accumulating of heat within walls specifically with respect to heat only
  • E04B1/78—Heat insulating elements
  • E04B1/80—Heat insulating elements slab-shaped
  • E04B1/803—Heat insulating elements slab-shaped with vacuum spaces included in the slab
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
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• • H—ELECTRICITY
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  • H01L23/02—Containers; Seals
  • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
  • H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
• • H—ELECTRICITY
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  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B2307/00—Properties of the layers or laminate
  • B32B2307/30—Properties of the layers or laminate having particular thermal properties
  • B32B2307/31—Heat sealable
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B2307/00—Properties of the layers or laminate
  • B32B2307/40—Properties of the layers or laminate having particular optical properties
  • B32B2307/412—Transparent
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B2307/00—Properties of the layers or laminate
  • B32B2307/40—Properties of the layers or laminate having particular optical properties
  • B32B2307/414—Translucent
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B2307/00—Properties of the layers or laminate
  • B32B2307/70—Other properties
  • B32B2307/724—Permeability to gases, adsorption
  • B32B2307/7242—Non-permeable
  • B32B2307/7246—Water vapor barrier
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B32—LAYERED PRODUCTS
  • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
  • B32B2607/00—Walls, panels
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
  • Y02A30/00—Adapting or protecting infrastructure or their operation
  • Y02A30/24—Structural elements or technologies for improving thermal insulation
  • Y02A30/242—Slab shaped vacuum insulation
• • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
  • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
  • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
  • Y02B80/00—Architectural or constructional elements improving the thermal performance of buildings
  • Y02B80/10—Insulation, e.g. vacuum or aerogel insulation

Definitions

• the present disclosure relates to barrier films.
• the present disclosure further provides articles comprising vacuum insulation panels or static shielding moisture barrier bags employing these barrier films.
• a vacuum insulation panel is a form of thermal insulation consisting of a nearly gas- tight envelope surrounding a core, from which the air has been evacuated.
• VIP can be formed from barrier films.
• VIP is used in, e.g. appliances and building construction to provide better insulation performance than conventional insulation materials. Since the leakage of air into the envelope would eventually degrade the insulation value of a VIP, known designs use foil laminated with heat-sealable material as the envelope to provide a gas barrier. However, the foil decreases the overall VIP thermal insulation performance. There exists a need for better barrier films or envelope films formed from these barrier films.
• Moisture barrier bags are useful for packaging electronic components.
• Moisture barrier bags can be formed from barrier films and function as a barrier against moisture vapor and oxygen to protect the electronic component from degradation while it is being stored. While the technology of the prior art may be useful, other constructions for moisture barrier bags useful for packaging electronic components are desired.
• layer refers to any material or combination of materials on or overlaying a substrate.
• (co)polymer” or “(co)polymeric” includes homopolymers and copolymers, as well as homopolymers or copolymers that may be formed in a miscible blend, e.g., by coextrusion or by reaction, including, e.g., transesterification.
• copolymer includes random, block, graft, and star copolymers.
• semitransparent refers to having a 20% to 80% average visible light transmission, which is measured as the average value of the % light transmitted from 400 nm to 700 nm by a transmission reflection densitometer.
• First layer 30 in some embodiments, such as the depicted embodiment, is a low thermal conductivity organic layer 32. Additionally, good flexibility, toughness, and adhesion to the selected substrate are considered desirable.
• the low thermal conductivity organic layer 32 may be prepared by conventional coating methods such as roll coating (e.g., gravure roll coating) or spray coating (e.g., electrostatic spray coating) the monomer, and then crosslinking by using, e.g., ultraviolet light radiation.
• the low thermal conductivity organic layer 32 may also be prepared by flash evaporation of the monomer, vapor deposition, followed by crosslinking, as described in the following U.S. Pat. No. 4,842,893 (Yializis et al.); U.S. Pat. No.
• Low thermal conductivity non-metallic inorganic material layer 44 and high electrical conductivity metallic material layer 46 may actually be applied in either order to first layer 30 and still achieve suitable barrier properties, and either order is considered within the scope of the present disclosure.
• Low thermal conductivity non-metallic inorganic material layer 44 preferably has a thermal conductivity of no more than 1, 0.5, 0.2 or even 0.015 W/(cm « K).
• High electrical conductivity metallic material layer 46 can include a high electrical conductivity metallic material, which preferably has a electrical conductivity of more than lx 10 7 , more than 1.5x 10 7 , more than 2x 10 7 , more than 3x 10 7 , more than 4x 10 7 , or more than 5x 10 7 Siemens/m. Another property useful in a suitable high electricalconductivity metallic material layer 46 is a high thermal resistance in the plane of the layer. For example, high electrical conductivity metallic material layer 46 have a thermal resistance more than 1000, more than 2.5x 10 or more than 5x 10 5 Kelvin/W for a 1 cm x 1 cm area.
• an optional second low thermal conductivity non-metallic inorganic material layer 48 is present to provide desirable physical properties.
• Such layers are conveniently applied by sputtering, and a thickness between about 10 and 50 nm is considered convenient, with approximately 20 nm in thickness being considered particularly suitable.
• Some embodiments such as the depicted embodiment further include an optional low thermal conductivity organic layer 50 applied to the second layer 40 on the side away from the substrate 22. Such a layer may be employed to physically protect the non-metallic inorganic material layer 44.
• Some embodiments may include additional layers in order to achieve desirable properties. For example, if additional barrier properties are deemed desirable, an additional layer of non-metallic inorganic material may optionally be applied, including, e.g. above the protective second polymer layer.
• the additional layer of non-metallic inorganic material can, for example provide an enhancing interfacial adhesion for lamination to another substrate.
• the substrate 22 is conveniently a polymeric layer. While diverse polymers may be used, when the barrier film is used for vacuum insulation panels, puncture resistance and thermal stability are properties to be particularly prized.
• useful polymeric puncture resistant films include polymers such as polyethylene (PE), polyethylene terephthalate (PET), polypropylene (PP), polyethylene napthalate (PEN), polyether sulfone (PES), polycarbonate, polyestercarbonate, polyetherimide (PEI), polyarylate (PAR), polymers with trade name ARTON (available from the Japanese Synthetic Rubber Co., Tokyo, Japan), polymers with trade name AVATREL (available from the B.F.
• Suitable monomers include, but are not limited to, hexadiol diacrylate;
• ethoxyethyl acrylate cyanoethyl (mono)acrylate; isobornyl (meth)acrylate; octadecyl acrylate; isodecyl acrylate; lauryl acrylate; beta-carboxyethyl acrylate; tetrahydrofurfuryl acrylate; dinitrile acrylate; pentafluorophenyl acrylate; nitrophenyl acrylate; 2-phenoxyethyl (meth)acrylate; 2,2,2- trifluoromethyl (meth)acrylate; diethylene glycol diacrylate; Methylene glycol di(meth) acrylate; tripropylene glycol diacrylate; tetraethylene glycol diacrylate; neo-pentyl glycol diacrylate;
• propoxylated neopentyl glycol diacrylate polyethylene glycol diacrylate; tetraethylene glycol diacrylate; bisphenol A epoxy diacrylate; 1,6-hexanediol dimethacrylate; trimethylol propane triacrylate; ethoxylated trimethylol propane triacrylate; propylated trimethylol propane triacrylate; tris(2-hydroxyethyl)-isocyanurate triacrylate; pentaerythritol triacrylate; phenylthioethyl acrylate; naphthloxyethyl acrylate; epoxy acrylate under the product number RDX80094 (available from RadCure Corp., Fairfield, N.J.); and mixtures thereof.
• a variety of other curable materials can be included in the polymer layer, such as, e.g., vinyl ethers, vinyl mapthalene, acrylonitrile, and mixtures thereof.
• the low thermal conductivity non-metallic inorganic material 44 may be prepared by a variety of methods, such as those described in U.S. Pat. No. 5,725,909 (Shaw et al.) and U.S. Pat. No. 5,440,446 (Shaw et al.), the disclosures of which are incorporated by reference.
• Low thermal conductivity non-metallic inorganic material can typically be prepared by reactive evaporation, reactive sputtering, chemical vapor deposition, plasma enhanced chemical vapor deposition, and atomic layer deposition. Preferred methods include vacuum preparations such as reactive sputtering and plasma enhanced chemical vapor deposition.
• the low thermal conductivity non-metallic inorganic material is conveniently applied as a thin layer.
• the low thermal conductivity non-metallic inorganic material e.g. silicon aluminum oxide, can for example, provide good barrier properties, as well as good interfacial adhesion to low thermal conductivity organic layer 30.
• Such layers are conveniently applied by sputtering, and a thickness between about 5 and 100 nm is considered convenient, with approximately 20 nm in thickness being considered particularly suitable.
• the high electrical conductivity metal may also has a high thermal conductivity, for example, a thermal conductivity of more than 1, 1.1, 1.2, 1.5, 2, 3, or 4 W/(cm » K).
• the metal is deposited at a thickness between about 2 and 100 nm to provide a high thermal resistance in the plane of the layer. In some embodiments, the metal can be deposited at a thickness between about 5 and 100 nm. In some embodiments, the metal can be deposited at a thickness between about 10 and 50 nm. In some embodiments, the metal can be deposited at a thickness between about 10 and 30 nm. In some embodiments, it may be convenient to partially oxidize the high electrical conductivity metallic material. Core
• An optional heat seal layer may also be present.
• Polyethylene, or a blend of linear low- density polyethylene and low-density polyethylene, are considered suitable.
• a heat seal layer may be applied to the barrier film by extrusion, coating, or lamination.
• a co-extruded composite layer comprising a high-density polyethylene is also considered suitable.
• the barrier film, or moisture barrier bag or VIP employing the barrier film is semitransparent.
• a semitransparent barrier film allows for direct reading of a barcoded part through the barrier film using a barcode scanner and this may eliminate the need for barcoding the bag.
• Such semitransparent barrier film can be used in moisture barrier bags for inspection of parts or desiccant and humidity indicating card inside these bags.
• the barrier film, or moisture barrier bag or VIP employing the barrier film has a Rs of less than 50, 40, 30, 20, 15, 10 or 5 Ohms/sq. In some embodiments, the barrier film, or moisture barrier bag or VIP employing the barrier film has an electrostatic shielding of less than 10, 7, 5, or 3 nanoJoules. In general, the barrier film having a Rs of less than 50 Ohms/sq or an electrostatic shielding of less than 10 nanoJoules can have good electromagnetic shielding properties.
• the barrier film, or moisture barrier bag or VIP employing the barrier film can have a water vapor transmission rate of less than 0.2, 0.1, 0.05 or 0.01 g/m 2 /day, thus providing good barrier properties.
• first layer in direct contact with one of the opposing major surfaces of the substrate, wherein the first layer is an inorganic stack or a low thermal conductivity organic layer or; and (c) a second layer in direct contact with the first layer, wherein the second layer is an inorganic stack or a low thermal conductivity organic layer, and wherein the second layer is not the same as that selected in the first layer;
• barrier film of any one of the preceding embodiments further comprising a flame retardant layer in direct contact with an opposing major surface of the substrate opposite the first layer.
• the barrier film has a Rs of less than 50 Ohms/sq.
• barrier film of any one of the preceding embodiments wherein the barrier film has a static decay time of less than 2 seconds.
• barrier film of any one of the preceding embodiments wherein the barrier film has an electrostatic shielding of less than 10 nanoJoules.
• barrier film has a water vapor transmission rate of less than 0.031 g/m 2 /day.
• An article comprising a vacuum insulation panel envelope comprising:
• the high electrical conductivity metallic material has an electrical conductivity of more than 1.5x 10 7 Siemens/m.
• the high electrical conductivity metallic material are selected from at least one of aluminum, silver, gold, copper, beryllium, tungsten, magnesium, rhodium, iridium, molybdenum, zinc, bronze, or combinations of the same. 16.
• the low thermal conductivity non- metallic inorganic material layer comprises a low thermal conductivity non-metallic inorganic material and the low thermal conductivity non-metallic inorganic material is selected from at least one of aluminum oxide, silicon oxide, aluminum-silicon-oxide, aluminum- silicon-nitride, and aluminum-silicon-oxy-nitride CuO, T1O2, ⁇ , Si 3 N 4 , TiN, ZnO, aluminum zinc oxide, Zr0 2 , yttria-stabilized zirconia and Ca 2 Si0 4 .
• An article comprising a moisture barrier bag comprising:
• first layer in direct contact with one of the opposing major surfaces of the substrate, wherein the first layer is an inorganic stack or a low thermal conductivity organic layer or; and (c) a second layer in direct contact with the first layer, wherein the second layer is an inorganic stack or a low thermal conductivity organic layer, and wherein the second layer is not the same as that selected in the first layer;
• the inorganic stack comprises a low thermal conductivity non-metallic inorganic material layer and a high electrical conductivity metallic material layer having a high thermal resistance in the plane of the high electrical conductivity metallic material layer; wherein the barrier film is semitransparent.
• the % light transmitted was measured using a commercially available spectrophotometer instrument either a Lambda 950 from Perkin Elmer of Altham, MA or a UltraScan PRO by HunterLab of Reson, VA The average value of the % light transmitted from 400 nm to 700 nm was calculated.
• barrier films were made on a vacuum coater similar to the coater described in U.S. Pat. Nos. 5,440,446 (Shaw et al.) and 7,018,713 (Padiyath, et al.).
• This coater was threaded up with a substrate in the form of an indefinite length roll of 0.05 mm thick, 14 inch (35.6 cm) wide PET film commercially available from DuPont-Teijin Films of Chester, VA.
• This substrate was then advanced at a constant line speed of 16 fpm (4.9 m/min).
• the substrate was prepared for coating by subjecting it to a nitrogen plasma treatment to improve the adhesion of the low thermal conductivity organic layer.
• a low thermal conductivity organic layer was formed on the substrate by applying tricyclodecane dimethanol diacrylate, commercially available as SARTOMER SR833S from Sartomer USA of Exton, PA, by ultrasonic atomization and flash evaporation to make a coating width of 12.5 inches (31.8 cm).
• This monomeric coating was subsequently cured immediately downstream with an electron beam curing gun operating at 7.0 kV and 4.0 mA.
• the flow of liquid into the evaporator was 1.33 ml/min, the gas flow rate was 60 seem and the evaporator temperature was set at 260°C.
• the process drum temperature was -10°C.
• the inorganic stack was applied, starting with the high electrical conductivity metallic inorganic material. More specifically, a conventional AC sputtering process operated at 4 kW of power was employed to deposit a 15 nm thick layer of copper onto the now polymerized low thermal conductivity organic layer (the book value of the electrical conductivity is 5.96 x 10 7 Siemens/m and the book value of the thermal conductivity of copper is 4.0 W/(cm » K)). Then a low thermal conductivity non-metallic inorganic material was laid down by an AC reactive sputter deposition process employing a 40 kHz AC power supply.
• the cathode had a Si(90%)/Al(10%) target obtained from Soleras Advanced Coatings US, of Biddeford, (ME).
• the voltage for the cathode during sputtering was controlled by a feed-back control loop that monitored the voltage and controlled the oxygen flow such that the voltage would remain high and not crash the target voltage.
• the system was operated at 16 kW of power to deposit a 20 nm thick layer of silicon aluminum oxide onto the copper layer.
• the flow rate of this mixture into the atomizer was 1.33 ml/min, the gas flow rate was 60 seem, and the evaporator temperature was 260°C.
• the coated mixture was cured to a finished polymer with an UV light.
• a barrier film was prepared according to the procedure of Example 1, except that the substrate was a 2.15 mil thick biaxially oriented polypropylene. It was tested for water vapor transmission according to the test method discussed above, and the water vapor transmission rate was found to be below the detection limit for the apparatus.
• barrier films were made on a vacuum coater similar to the coater described in U.S. Pat. Nos. 5,440,446 (Shaw et al.) and 7,018,713 (Padiyath, et al.).
• This coater was threaded up with a substrate in the form of an indefinite length roll of 0.00092 inch (0.023mm) thick PET film commercially available as Astroll STOl from Kolon Industries Inc. of Gwacheon-si, Korea.
• This substrate was then advanced at a constant line speed of 16 fpm (4.9 m/min).
• the substrate was prepared for coating by subjecting it to a nitrogen plasma treatment to improve the adhesion of the low thermal conductivity organic layer.
• the inorganic stack was applied, starting with the high electrical conductivity metallic inorganic material. More specifically, two cathodes using a conventional DC sputtering process operated at 2.8 kW of power for each cathode was employed to deposit a 35 nm thick layer of copper onto the now polymerized low thermal conductivity organic layer (the book value of the electrical conductivity is 5.96 x 10 7 Siemens/m and the book value of the thermal conductivity of copper is 4.0 W/(cm » K)). Then a low thermal conductivity non-metallic inorganic material was laid down by an AC reactive sputter deposition process employing a 40 kHz AC power supply.
• the cathode had a Si(90%)/Al(10%) target obtained from Soleras Advanced Coatings US, of Biddeford, (ME).
• the voltage for the cathode during sputtering was controlled by a feed-back control loop that monitored the voltage and controlled the oxygen flow such that the voltage would remain high and not crash the target voltage.
• the system was operated at 16 kW of power to deposit a 20 nm thick layer of silicon aluminum oxide onto the copper layer.
• a barrier film was prepared generally according to the procedure of Example 3, except for the following particulars.
• the power to each cathode used to deposit copper was 4.0 kW to deposit a 50 nm thick layer of copper.
• Example 5 The power to each cathode used to deposit copper was 4.0 kW to deposit a 50 nm thick layer of copper.
• a barrier film was prepared generally according to the procedure of Example 3, except for the following particulars.
• the substrate used was 0.97 mil PET commercially available from Toray Plastics America and the power to each cathode used to deposit copper was 0.8 kW to deposit a 10 nm thick layer of copper.
• a barrier film was prepared generally according to the procedure of Example 5, except for the following particulars.
• the cathode using the SiAl target had 80 seem of N2 flowed in the AC reactive sputtering process to deposit 20 nm of silicon aluminum oxy nitride.
• a barrier film was prepared generally according to the procedure of Example 5, except for the following particulars.
• the flow of liquid into the evaporator was 2.66 ml/min when the low thermal conductivity organic layer was formed on the substrate.

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• 2016
  • 2016-06-09 CN CN201680034803.6A patent/CN108337916A/zh not_active Withdrawn
  • 2016-06-09 US US15/735,293 patent/US20180169697A1/en not_active Abandoned
  • 2016-06-09 KR KR1020187000506A patent/KR20180019153A/ko not_active Withdrawn
  • 2016-06-09 WO PCT/US2016/036644 patent/WO2016205061A1/en not_active Ceased
  • 2016-06-09 JP JP2017565140A patent/JP6832297B6/ja not_active Expired - Fee Related
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