WO2016203585A1 - Procédé de formation de film et dispositif de formation de film - Google Patents

Procédé de formation de film et dispositif de formation de film Download PDF

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Publication number
WO2016203585A1
WO2016203585A1 PCT/JP2015/067507 JP2015067507W WO2016203585A1 WO 2016203585 A1 WO2016203585 A1 WO 2016203585A1 JP 2015067507 W JP2015067507 W JP 2015067507W WO 2016203585 A1 WO2016203585 A1 WO 2016203585A1
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WO
WIPO (PCT)
Prior art keywords
plasma
substrate
sputtering
film
thin film
Prior art date
Application number
PCT/JP2015/067507
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English (en)
Japanese (ja)
Inventor
将崇 石田
林　達也
卓哉 菅原
伸哉 我妻
充祐 宮内
友松 姜
亦周 長江
Original Assignee
株式会社シンクロン
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社シンクロン filed Critical 株式会社シンクロン
Priority to JP2016501253A priority Critical patent/JP6533511B2/ja
Priority to PCT/JP2015/067507 priority patent/WO2016203585A1/fr
Priority to CN201520843493.5U priority patent/CN205062167U/zh
Priority to CN201510711369.8A priority patent/CN106256927B/zh
Priority to TW105101039A priority patent/TWI683020B/zh
Publication of WO2016203585A1 publication Critical patent/WO2016203585A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Definitions

  • the plurality of substrates to which a voltage is applied react with a predetermined position in the film formation region.
  • the thin film can also be formed by moving between a predetermined position of the region, thereby repeating the formation of the intermediate thin film and the conversion to the ultra thin film.
  • “Rotation” as used in the above invention includes not only rotation but also revolution. Therefore, in the case of simply “rotating around the central axis”, a mode of revolving is included in addition to a mode of rotating about a certain central axis.
  • FIG. 1 is a partial cross-sectional view showing an example of a film forming apparatus for realizing the method of the present invention.
  • FIG. 2 is a partial longitudinal sectional view taken along line II-II in FIG.
  • FIG. 3 is a graph showing the relationship between the plasma processing power in the reaction region and the film hardness of the thin film in Experimental Example 1.
  • FIG. 4 is a graph showing the relationship between the plasma processing power in the reaction region and the etching rate for the thin film in Experimental Example 2.
  • FIG. 5 is a cross-sectional view showing an example after the embedded film formation on the pattern substrate.
  • Each substrate electrode 18 is disposed at a predetermined distance (d) from the back surface of each substrate S to be disposed, and in parallel to face the back surface of each substrate S.
  • the distance d between the substrate S and the substrate electrode 18 (more precisely, the distance between the back surface of the substrate S and the surface of the substrate electrode 18) is within a range in which the effect of self-bias by the substrate electrode 18 is reflected on the substrate S. Is set.
  • the self-bias effect reflected on the substrate S can be adjusted by changing the distance d.
  • the self-bias potential may be adjusted by changing the sputtering power.
  • each substrate electrode 18 When the substrate electrode 18 is attached to the back side of each substrate S, power is supplied to each substrate electrode 18, so that it is not necessary to supply power to the entire substrate holder 13. Since the area to which current is applied is small, the range of voltage and current values that can be applied to each substrate S can be set to a higher value than before, and the ion density can be increased. Or shortening the processing time.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention concerne un procédé qui est un procédé de formation de film consistant à former un film mince par mise en œuvre d'un traitement au plasma dans lequel une pluralité de substrats S, à laquelle une tension est appliquée, est introduite séquentiellement à une position prédéterminée dans une région 20 de formation de film atteinte par des particules de pulvérisation libérées depuis des cibles 29a, 29b par un plasma de pulvérisation en provenance d'une décharge électrique de pulvérisation, ce qui permet aux particules de pulvérisation d'atteindre la surface des substrats S et de s'accumuler sur ceux-ci, et les ions dans le plasma de pulvérisation frappent les substrats S ou un dépôt de particules de pulvérisation, ledit dépôt de particules de pulvérisation et le traitement par plasma à l'aide d'un plasma de pulvérisation étant réalisés dans la région de formation de film 20 formée dans un récipient à vide 11 comportant un système d'échappement, et un film mince intermédiaire étant formé, après quoi les substrats S sont déplacés dans une région réactionnelle 60 disposée de manière à être séparée spatialement de la région 20 de formation de film, le retraitement de plasma est effectué dans celle où les ions dans un plasma, qui se séparent du plasma de pulvérisation, sont amenés à se projeter sur la couche mince intermédiaire, et un film mince est formé.
PCT/JP2015/067507 2015-06-17 2015-06-17 Procédé de formation de film et dispositif de formation de film WO2016203585A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2016501253A JP6533511B2 (ja) 2015-06-17 2015-06-17 成膜方法及び成膜装置
PCT/JP2015/067507 WO2016203585A1 (fr) 2015-06-17 2015-06-17 Procédé de formation de film et dispositif de formation de film
CN201520843493.5U CN205062167U (zh) 2015-06-17 2015-10-28 成膜装置
CN201510711369.8A CN106256927B (zh) 2015-06-17 2015-10-28 成膜方法和成膜装置
TW105101039A TWI683020B (zh) 2015-06-17 2016-01-14 成膜方法及成膜裝置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2015/067507 WO2016203585A1 (fr) 2015-06-17 2015-06-17 Procédé de formation de film et dispositif de formation de film

Publications (1)

Publication Number Publication Date
WO2016203585A1 true WO2016203585A1 (fr) 2016-12-22

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PCT/JP2015/067507 WO2016203585A1 (fr) 2015-06-17 2015-06-17 Procédé de formation de film et dispositif de formation de film

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Country Link
JP (1) JP6533511B2 (fr)
CN (2) CN205062167U (fr)
TW (1) TWI683020B (fr)
WO (1) WO2016203585A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019169622A (ja) * 2018-03-23 2019-10-03 Tdk株式会社 薄膜キャパシタ、及び薄膜キャパシタの製造方法
CN110872693A (zh) * 2018-08-31 2020-03-10 佳能特机株式会社 成膜装置、成膜方法以及电子器件的制造方法
JP7017832B1 (ja) * 2021-06-08 2022-02-09 株式会社シンクロン バイアス印加装置

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6392912B2 (ja) * 2017-01-31 2018-09-19 学校法人東海大学 成膜方法
JP6379318B1 (ja) * 2017-06-14 2018-08-22 株式会社アルバック 成膜装置及び成膜方法並びに太陽電池の製造方法
JP6476261B1 (ja) * 2017-10-17 2019-02-27 株式会社神戸製鋼所 成膜方法
CN209065995U (zh) * 2018-10-15 2019-07-05 株式会社新柯隆 成膜装置
WO2020183827A1 (fr) * 2019-03-12 2020-09-17 株式会社アルバック Procédé de formation de film
US20200354826A1 (en) * 2019-05-08 2020-11-12 Intevac, Inc. Method to produce high density diamond like carbon thin films
WO2020246449A1 (fr) * 2019-06-06 2020-12-10 芝浦メカトロニクス株式会社 Appareil de formation de film
EP3987079A4 (fr) * 2019-06-24 2023-03-01 TRUMPF Huettinger Sp. Z o. o. Procédé de réglage de la puissance de sortie d'une alimentation électrique fournissant de l'énergie électrique à un plasma, appareil à plasma et alimentation électrique
CN112779507B (zh) * 2019-11-11 2024-02-09 株式会社新柯隆 成膜装置
JP7111380B2 (ja) * 2020-04-01 2022-08-02 株式会社シンクロン スパッタ装置及びこれを用いた成膜方法
WO2022024295A1 (fr) * 2020-07-30 2022-02-03 株式会社シンクロン Dispositif de transfert et dispositif filmogène mettant en œuvre un tel dispositif

Citations (7)

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JPH0714769A (ja) * 1993-06-22 1995-01-17 Hitachi Ltd 半導体製造装置
JP2004204304A (ja) * 2002-12-25 2004-07-22 Shincron:Kk 薄膜の製造方法およびスパッタリング装置
JP2005036276A (ja) * 2003-07-18 2005-02-10 Kawasaki Heavy Ind Ltd 複合構造薄膜製造方法及び装置
JP2005226088A (ja) * 2004-02-10 2005-08-25 Ulvac Japan Ltd 成膜方法及び成膜装置
WO2009154196A1 (fr) * 2008-06-17 2009-12-23 株式会社シンクロン Appareil polariseur pulvérisateur
WO2010026887A1 (fr) * 2008-09-05 2010-03-11 株式会社シンクロン Procédé filmogène et base oléophobe
US20120045588A1 (en) * 2010-08-23 2012-02-23 Vaeco Inc. Deposition system with a rotating drum

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1842612B (zh) * 2004-03-15 2010-12-08 株式会社爱发科 成膜装置及其成膜方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0714769A (ja) * 1993-06-22 1995-01-17 Hitachi Ltd 半導体製造装置
JP2004204304A (ja) * 2002-12-25 2004-07-22 Shincron:Kk 薄膜の製造方法およびスパッタリング装置
JP2005036276A (ja) * 2003-07-18 2005-02-10 Kawasaki Heavy Ind Ltd 複合構造薄膜製造方法及び装置
JP2005226088A (ja) * 2004-02-10 2005-08-25 Ulvac Japan Ltd 成膜方法及び成膜装置
WO2009154196A1 (fr) * 2008-06-17 2009-12-23 株式会社シンクロン Appareil polariseur pulvérisateur
WO2010026887A1 (fr) * 2008-09-05 2010-03-11 株式会社シンクロン Procédé filmogène et base oléophobe
US20120045588A1 (en) * 2010-08-23 2012-02-23 Vaeco Inc. Deposition system with a rotating drum

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019169622A (ja) * 2018-03-23 2019-10-03 Tdk株式会社 薄膜キャパシタ、及び薄膜キャパシタの製造方法
JP7056290B2 (ja) 2018-03-23 2022-04-19 Tdk株式会社 薄膜キャパシタ、及び薄膜キャパシタの製造方法
US11443900B2 (en) 2018-03-23 2022-09-13 Tdk Corporation Thin film capacitor, and method of producing thin film capacitor
CN110872693A (zh) * 2018-08-31 2020-03-10 佳能特机株式会社 成膜装置、成膜方法以及电子器件的制造方法
CN110872693B (zh) * 2018-08-31 2023-07-04 佳能特机株式会社 成膜装置、成膜方法以及电子器件的制造方法
JP7017832B1 (ja) * 2021-06-08 2022-02-09 株式会社シンクロン バイアス印加装置
WO2022259368A1 (fr) * 2021-06-08 2022-12-15 株式会社シンクロン Dispositif d'application de polarisation

Also Published As

Publication number Publication date
CN106256927A (zh) 2016-12-28
CN205062167U (zh) 2016-03-02
CN106256927B (zh) 2020-02-07
JP6533511B2 (ja) 2019-06-19
TW201700757A (zh) 2017-01-01
JPWO2016203585A1 (ja) 2018-04-05
TWI683020B (zh) 2020-01-21

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