WO2021199693A1 - Appareil de pulvérisation cathodique et procédé de formation de film l'utilisant - Google Patents

Appareil de pulvérisation cathodique et procédé de formation de film l'utilisant Download PDF

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Publication number
WO2021199693A1
WO2021199693A1 PCT/JP2021/004914 JP2021004914W WO2021199693A1 WO 2021199693 A1 WO2021199693 A1 WO 2021199693A1 JP 2021004914 W JP2021004914 W JP 2021004914W WO 2021199693 A1 WO2021199693 A1 WO 2021199693A1
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Prior art keywords
film forming
substrate
process region
substrate holder
chamber
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PCT/JP2021/004914
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English (en)
Japanese (ja)
Inventor
嘉規 大胡
充祐 宮内
青山　貴昭
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株式会社シンクロン
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Priority to CN202180005205.7A priority Critical patent/CN114375346A/zh
Publication of WO2021199693A1 publication Critical patent/WO2021199693A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process

Definitions

  • the present invention relates to a sputtering apparatus for forming a film on the surface of a substrate or the like and a film forming method using the sputtering apparatus.
  • a thin film forming apparatus known for forming an intermediate thin film on a substrate by sputtering a target arranged in a film forming process region of a vacuum chamber and forming a final thin film by plasma treating the intermediate thin film in the reaction process region. (See, for example, Patent Document 1).
  • the film forming process region having the sputtering means and the reaction process region having the plasma generating means are provided on the circumference of the disk-shaped substrate holder, the film forming process region. There is a problem that the space is small even if you try to add more.
  • An object to be solved by the present invention is to provide a sputtering apparatus having a wide setting space for a film forming process area and a film forming method using the sputtering apparatus.
  • the present invention includes a film forming chamber that forms a film on a substrate, and a film forming chamber.
  • a decompression device that creates a decompression atmosphere inside the film formation chamber
  • a disk-shaped substrate holder rotatably provided in the film forming chamber and having a substrate holding portion that rotatably holds the substrate on one main surface.
  • a drive device for rotating the board holder and In the film forming chamber, a film forming process region formed in a space corresponding to the outer peripheral region of the substrate holder and provided with a sputtering electrode, and a film forming process region.
  • a reaction process region formed in the space corresponding to the central region of the substrate holder in the film forming chamber and provided with a plasma generator, and a reaction process region.
  • the reaction process region includes a central space immediately above the center of the substrate holder and a peripheral space around the central space.
  • the plasma generator is preferably provided in the central space and / or the surrounding space.
  • a plurality of the plasma generators may be provided in the reaction process region.
  • a planetary gear mechanism that rotates the substrate holding portion with respect to the substrate holder and revolves with respect to the film forming chamber as the substrate holder rotates.
  • the gas introduction device includes a first introduction unit that independently introduces the discharge gas into the film formation chamber and a second introduction unit that independently introduces the reaction gas into the film formation chamber.
  • the first gas introduction section is provided at a position relatively close to the film formation process region with respect to the reaction process region, and the second gas introduction section is relatively formed with respect to the reaction process region. It is preferably provided at a position far from the membrane process region.
  • the substrate, the film forming process region, and the reaction process region are provided on one main surface side of the substrate holder.
  • the decompression device preferably has a suction portion on the wall surface of the film forming chamber facing the space on the other main surface side of the substrate holder.
  • the present invention uses the above sputtering apparatus. With respect to the substrate held by the substrate holding portion, the substrate holding portion rotates with the rotation of the substrate holder, and a film forming process is performed in the film forming process region in the metal mode or the transition mode to perform the film forming process in the reaction process region.
  • the above problem is also solved by a film forming method in which plasma treatment is performed in the above.
  • the reaction process region provided with the plasma generator is formed in the space corresponding to the central region of the substrate holder in the film forming chamber, the outer peripheral region of the substrate holder in the film forming chamber.
  • the space corresponding to can be set as the film forming process area. This makes it possible to provide a sputtering apparatus having a wide setting space in the film forming process region and a film forming method using the sputtering apparatus.
  • FIG. 1 is a plan view showing an embodiment of a film forming apparatus using the sputtering apparatus according to the present invention.
  • the film forming apparatus 2 shown in FIG. 1 is, for example, a film forming apparatus for forming a dielectric film on the surface of a silicon wafer, and handles two sputtering devices 1 and 1 and a substrate S such as a silicon wafer to be formed.
  • Gate valves 25a and 25b are provided between the two sputtering devices 1 and 1 and the transfer chamber 22, respectively, and between the carry-in chamber 23 and the transfer chamber 22 and between the carry-out chamber 24 and the transfer chamber 22. Gate valves 26a and 26b are provided between them, respectively. These gate valves 25a and 25b maintain the airtightness between the film forming chambers 11 and 11 of the sputtering apparatus 1 and 1 and the transfer chamber 22, and the gate valves 26a and 26b provide the transfer chamber 22 and the carry-in chamber 23. The airtightness of the transfer chamber 22 and the airtightness of the transfer chamber 22 and the carry-out chamber 24 are maintained.
  • gate valves 27a and 27b are provided at the inlet of the carry-in chamber 23 and the outlet of the carry-out chamber 24, respectively, so that the clean room provided with the film forming apparatus 2 and the carry-in chamber 23 and the carry-out chamber 24 are airtight. Be kept.
  • the substrate S before film formation is carried into the carry-in chamber 23 with the gate valve 26a of the carry-in chamber 23 closed and the gate valve 27a opened, and then the gate valve 27a of the carry-in chamber 23 is closed and the gate valve. 26a is opened, and in this state, the substrate S is carried into the transfer chamber 22 by the handling robot 21.
  • the gate valve 26a of the carry-in chamber 23 is closed, the gate valve 25a of one of the sputtering devices 1 is opened, the substrate S is placed at a predetermined position of the substrate holder 12 of the sputtering device 1 by the handling robot 21, and then the gate valve 25a is placed. Close and perform film formation process.
  • the gate valve 25a of the sputtering apparatus 1 is opened, the substrate S after the film forming process is carried out from the film forming chamber 11 to the transfer chamber 22 by the handling robot 21, and the gate valve 27b of the carry-out chamber 24 is carried out.
  • the gate valve 26b is opened in a closed state, and the substrate S for which the film formation process has been completed is carried into the carry-out chamber 24.
  • the gate valve 27b is opened, and the substrate S having been subjected to the film forming process is carried out from the film forming apparatus 2.
  • the film forming apparatus 2 shown in FIG. 1 is an example of use of the sputtering apparatus 1 according to the present invention, and does not limit the present invention.
  • FIG. 2 is a cross-sectional view showing the sputtering apparatus 1 according to the embodiment of the present invention, and corresponds to a cross-sectional view taken along the line II-II of FIG.
  • the sputtering apparatus 1 of the present embodiment is used, for example, to form a film having a target film thickness on a substrate by repeating plasma treatment after forming a film thinner than the target film thickness by sputtering. can do.
  • the sputtering apparatus 1 of the present embodiment can rotate inside the film forming chamber 11 that forms a film on the substrate S, the depressurizing device 19 that creates a depressurizing atmosphere in the internal space of the film forming chamber 11, and the film forming chamber 11.
  • a disk-shaped substrate holder 12 having a substrate holding portion 14 for holding the substrate S so as to be rotatable on one main surface, a driving device 13 for rotating the substrate holder 12, and an internal space of the film forming chamber 11.
  • the space formed in the space corresponding to the outer peripheral region of the substrate holder 12 and provided with the sputter electrode 16 the space corresponding to the central region of the substrate holder 12 among the internal space of the film forming chamber 11 and the film forming process region R1.
  • It is provided with a reaction process region R2 formed in the above and provided with a plasma generator 17, and a gas introduction device 18 for introducing a discharge gas and a reaction gas into the internal space of the film forming chamber 11.
  • the film forming chamber 11 is composed of a hollow housing that substantially forms a closed space, and has a regular pentagon in a plan view, for example, as shown in FIG.
  • a gate valve 25a or 25b is provided on one of the five side wall surfaces of the film forming chamber 11, from which the substrate S (which may be together with the substrate holder 12 or the substrate holding portion 14) is carried in and out. Is done.
  • a plurality of suction portions 191 of the decompression device 19 such as a turbo molecular pump are formed on the bottom wall surface of the film forming chamber 11, and the gas in the internal space of the film forming chamber 11 is sucked toward the bottom wall surface.
  • the membrane chamber 11 is maintained in a reduced pressure atmosphere.
  • a substrate holder 12 for holding the film-forming substrate S is provided in the internal space of the film-forming chamber 11.
  • the substrate holder 12 of the present embodiment is formed in a circular or flat plate shape, and is fixed and supported on the rotating shaft 131 of the driving device 13.
  • the drive device 13 comprises, for example, an electric motor and is fixed to the film forming chamber 11. By operating the drive device 13, the substrate holder 12 rotates in a predetermined direction at a predetermined speed (for example, 10 to 200 rpm) about the rotation shaft 131.
  • a predetermined speed for example, 10 to 200 rpm
  • the diameter of the substrate is 10 to 600 mm
  • the diameter of the substrate holder 12 is, for example, 400 to 2600 mm.
  • the substrate holder 12 of the present embodiment is provided with a plurality of substrate holding portions 14 having rotation centers on the circumference thereof so as to be rotatable, and a substrate S to be film-formed is provided on the upper surface of each substrate holding portion 14. Is placed. That is, as shown in FIG. 2, the shaft portion 141 of the substrate holding portion 14 is rotatably supported by the substrate holder 12 via the bearing 151.
  • FIG. 3A is a plan view showing an example of the substrate holder 12 of the sputtering apparatus 1 of the present embodiment
  • FIG. 3B is a plan view showing another example of the substrate holder 12 of the sputtering apparatus 1 of the present embodiment.
  • four substrate holding portions 14 having rotation centers on the same circumference are provided at positions equiordinated with respect to the substrate holder 12 in the circumferential direction.
  • a plurality of substrates S (three substrates S in the example shown in the figure) are placed on one substrate holding portion 14 at equidistant positions with respect to the center of rotation. ..
  • FIG. 3A a plurality of substrates S (three substrates S in the example shown in the figure) are placed on one substrate holding portion 14 at equidistant positions with respect to the center of rotation. ..
  • FIG. 1 is a plan view showing an example of the substrate holder 12 of the sputtering apparatus 1 of the present embodiment
  • FIG. 3B is a plan view showing another example
  • one substrate S is placed at the center of rotation on one substrate holding portion 14.
  • the sputtering apparatus 1 of the present invention may employ any of the substrate holding portions 14 shown in FIGS. 3A and 3B. Further, in case it is necessary to heat the substrate S at the time of film formation, a heater for heating the substrate S may be provided in the substrate holding portion 14.
  • the sputtering apparatus 1 of the present embodiment is a planetary gear that rotates each of the substrate holding portions 14 with respect to the substrate holder 12 and revolves the substrate holding portion 14 with respect to the film forming chamber 11 as the substrate holder 12 rotates. It has a mechanism 15. As shown in FIG. 2, the planetary gear mechanism 15 of the present embodiment has an annular magnetic gear 152 fixed to the shaft portion 141 of the substrate holding portion 14 and a film forming chamber at a position surrounding the rotating shaft 131 of the drive device 13. An annular magnetic gear 153 fixed to 11 and facing the magnetic gear 152 is provided. Then, when the rotary shaft 131 is rotated by the drive device 13, the substrate holder 12 and the substrate holding portion 14 rotate around the rotary shaft 131 accordingly.
  • the substrate holding portion 14 revolves around the rotating shaft 131.
  • the magnetic gear 153 does not rotate, the magnetic gear 152 fixed to the shaft portion 141 of the substrate holding portion 14 moves while facing the magnetic surface of the magnetic gear 153.
  • the magnetic gear 152 rotates about the shaft portion 141, so that the substrate holding portion 14 rotates with respect to the substrate holder 12.
  • a plurality of sputtering electrodes 16 are provided in the outer peripheral region of the substrate holder 12 in the internal space of the film forming chamber 11, and the film forming process region R1 is formed here.
  • a plasma generator 17 is provided in the central region of the substrate holder 12, and the reaction process region R2 is formed there.
  • the central region (that is, the reaction process region R2) formed in the internal space of the film forming chamber 11 is between the ceiling surface of the film forming chamber 11 and the upper surface of the substrate holder 12, and is the rotation center line of the substrate holder 12.
  • one plasma generator 17 of the present embodiment is provided over the entire central region (reaction process region R2).
  • the sputtering electrode 16 of the present embodiment is provided at a position corresponding to four of the five sides of a regular pentagon, for example. That is, the four sputter electrodes 16 are provided at positions corresponding to the four sides other than the sides where the gate valves 25a and 25b are provided.
  • the number of sputtering electrodes 16 is not limited to the present invention, but the effect of the present invention is more exhibited when a large number of sputtering electrodes 16 are desired to be provided.
  • the sputtering electrode 16 of the present embodiment includes a pair of magnetron sputtering electrodes and an AC power supply connected via a transformer, and a target T as a film forming material is attached to the tip of the magnetron sputtering electrode.
  • the sputter electrode 16 is fixed to the film forming chamber 11 so that the surface of the target T faces the outer peripheral region of the substrate holder 12, and an alternating electric field of 1 k to 100 kHz is applied to the target T by an AC power source at the time of film formation. Will be done.
  • the plasma generator 17 of the present embodiment is installed on the rotation center line of the substrate holder 12 or on the ceiling wall of the film forming chamber 11 within a range of 400 mm from the rotation center line.
  • the plasma generator 17 of the present embodiment is not particularly limited, and is any one of discharge methods such as capacitively coupled plasma (CCP), electron cyclotron resonance plasma (ECRP), helicon wave plasma (HP), and surface wave plasma (SWP).
  • CCP capacitively coupled plasma
  • ECRP electron cyclotron resonance plasma
  • HP helicon wave plasma
  • SWP surface wave plasma
  • a plasma generator that employs the above can be used.
  • the frequency used in the plasma generator 17 is, for example, 0.1 to 100 MHz and 2.45 GHz.
  • one plasma generator 17 of the sputtering apparatus 1 of the embodiment shown in FIGS. 1 and 2 is provided over the entire central region (reaction process region R2).
  • more sputtering electrodes 16 can be arranged inside the smaller film forming chamber 11, but depending on the diameter of the substrate holding portion 14, the plasma generator 17 and the substrate S arranged in the central region rotate. The orbit may be off.
  • the plasma generator 17 may be provided, or may be provided at a position offset from the rotation shaft 131 in the central region. Further, as in the sputtering device 1 shown in the lower right of FIG. 5, even one plasma generator 17 is provided at a position offset from the rotation shaft 131 in the central region according to the rotation trajectory of the substrate S. May be good.
  • the gas introduction device 18 of the present embodiment has a gas cylinder 181a for storing a discharge gas (a gas that emits electrons colliding with a target in a sputtering process) and a gas cylinder 181b for storing a reaction gas.
  • the discharge gas is not particularly limited, but an inert gas such as argon gas is used.
  • As the reaction gas a gas corresponding to the target film type is selected. For example, oxygen gas is used in the case of an oxide film, and nitrogen gas is used in the case of a nitride film.
  • the gas introduction device 18 of the present embodiment includes a plurality of first gas introduction units 183a for introducing the discharge gas stored in the gas cylinder 181a into the film forming chamber 11, and the gas from each of the first gas introduction units 183a.
  • the flow rate is independently controlled by the mass flow controller 182a.
  • the gas introduction device 18 of the present embodiment includes a plurality of second gas introduction units 183b that introduce the reaction gas stored in the gas cylinder 181b into the film forming chamber 11, and each of the second gas introduction units 183b.
  • the gas flow rate from the gas flow rate is independently controlled by the mass flow controller 182b.
  • the first gas introduction unit 183a for introducing the discharge gas is provided at a position relatively closer to the film forming process region R1 than the reaction process region R2, and the second gas introduction unit 183b for introducing the reaction gas is provided. , It is provided at a position relatively far from the film forming process region R1 as compared with the reaction process region R2. That is, as shown in FIG. 2, the first gas introduction unit 183a and the second gas introduction unit 183b are provided around the plasma generator 17, but the second gas introduction unit 183b is around the plasma generator 17.
  • the first gas introduction unit 183a is provided in the vicinity of the first gas introduction unit 183a.
  • the film formation process region R1 which is the outer peripheral space of the reaction process region R2 having a cylindrical shape and is also a cylindrical outer peripheral region between the sputtering electrode 16 and the upper surface of the substrate holder 12.
  • the substrate S mounted on the substrate holding portion 14 that rotates on the upper surface of the substrate holder 12. Will pass through the film forming process region R1 and the reaction process region R2 at regular intervals while repeating rotation and revolution in the film forming chamber 11.
  • the discharge gas whose flow rate is adjusted by the mass flow controller 182a is guided from the gas cylinder 181a into the film formation chamber 11, and the reaction gas whose flow rate is adjusted by the mass flow controller 182b is formed from the gas bomb 181b. It is guided into the chamber 11 and the atmosphere for performing sputtering in the film forming process region R1 is adjusted.
  • the target T is sputtered by applying an AC voltage having a frequency of 1 to 100 KHz from the AC power source to the magnetron sputtering electrode.
  • the film raw material is supplied from the target T toward the substrate S, and an intermediate thin film made of a metal film or an incomplete metal compound is formed on the surface of the substrate S.
  • FIG. 4 is a graph showing a characteristic profile of the film formation rate (deposition amount per unit time) with respect to the flow rate of oxygen gas, nitrogen gas and other predetermined types of reaction gas under predetermined reactive sputtering conditions.
  • the range in which the reaction gas flow rate is relatively small is called the metal mode, and the range in which the reaction gas flow rate is relatively large is called the reaction mode (also called the oxidation mode when oxygen is used as the reaction gas).
  • the film formation rate with respect to the reaction gas flow rate has a high film formation rate from 0 until the reaction gas flow rate reaches the transition mode, rapidly decreases and changes in the vicinity of the transition mode range, and then becomes a low film formation rate.
  • the film formation rate is slow in the reaction mode, and the film formation rate is high in the metal mode.
  • the film formation process is performed in the range of the metal mode or the transition mode by adjusting the flow rate of the discharge gas and the flow rate of the reaction gas.
  • the discharge gas whose flow rate is adjusted by the mass flow controller 182a is guided from the gas cylinder 181a into the film forming chamber 11, and the flow rate is adjusted by the mass flow controller 182b.
  • the generated reaction gas is guided from the gas cylinder 181b into the film forming chamber 11, and the atmosphere for performing the plasma treatment in the reaction process region R2 is adjusted. Further, the plasma generator 17 generates plasma of the reaction gas in the reaction process region R2.
  • the ion species and radical species supplied from the plasma generator 17 have a certain relaxation time, and even if there is a certain distance of, for example, about 100 to 200 mm from the plasma generator 17 in which the plasma is concentrated, the substrate Ion species and radical species can be supplied to S. Then, the substrate S on which the intermediate thin film is formed by passing through the film forming process region R1 is subjected to plasma treatment by plasma of the reaction gas by passing through the reaction process region R2, and the intermediate thin film has a predetermined composition. Convert to a thin film. In this way, the substrate S periodically passes through the film forming process region R1 and the reaction process region R2, so that a desired thin film is finally formed.
  • the reaction process region R1 provided with the plasma generating apparatus 17 is located in the central region of the substrate holder 12 in the film forming chamber 11. Since it is formed in the corresponding space, the space corresponding to the outer peripheral region of the substrate holder 12 in the film forming chamber 11 can be set as the film forming process region R2. This makes it possible to provide a sputtering apparatus 1 having a wide setting space for the film forming process region R2 and a film forming method using the sputtering apparatus 1.
  • the substrate holding portion 14 rotates with respect to the substrate holder 12 and revolves with respect to the film forming chamber 11 as the substrate holder 12 rotates. Since the planetary gear mechanism 15 is provided, the substrate S passes through the film forming process region R1 and the reaction process region R2 alternately more frequently than when the substrate holding portion 14 does not rotate. As a result, the thin film produced by the reactive sputtering can be plasma-treated more efficiently.
  • the first gas introduction unit 183a for guiding the discharge gas is located at a position relatively closer to the film forming process region R1 than the reaction process region R2.
  • the second gas introduction unit 183b which is provided in the above and guides the reaction gas, is provided at a position relatively far from the film forming process region R1 with respect to the reaction process region R2, so that the target T reacts with the reaction gas. It can suppress oxidation and nitridement. As a result, it is possible to suppress the formation of a dielectric film in the non-erosion portion of the target T, and it is possible to reduce the arcing phenomenon.
  • the suction portion 191 of the depressurizing device 19 is provided on the bottom wall surface of the film forming chamber 11, so that the gas in the film forming chamber 11 is provided.
  • the flow is controlled, and the neutral gas, ions, radicals and electrons supplied from the plasma generator 17 can be efficiently guided to the substrate S.
  • an insulating shield 121 having a floating potential is provided on the upper surface of the substrate holder 12, and a sputter electrode 16 and plasma are generated from a component including the substrate holder 12 and the substrate holding portion 14 to be formed into a film. It is more preferable to electrically float the device 17.
  • the refrigerant that cools the peripheral parts of the substrate S may be circulated.
  • the film forming method shown in FIG. 2 is a so-called depot down method in which the cathode is arranged on the substrate S to form a film, but the present invention can also adopt the depot up method, and the above-described implementation The form does not limit the film formation direction and the substrate transfer method of the present invention.
  • the magnetic gears 152 and 153 for driving the planetary rotation shown in FIG. 2 conventionally known spur gears, helical gears, screw gears, and bevel gears may be used.
  • the device mechanism of the present invention is not limited.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

Un appareil de pulvérisation cathodique selon la présente invention comprend : une chambre de formation de film (11) dans laquelle un film est formé sur un substrat (S) ; un dispositif de réduction de pression (19) pour placer l'intérieur de la chambre de formation de film dans une atmosphère à pression réduite ; un support de substrat de type disque (12) qui est disposé de manière rotative dans la chambre de formation de film, et qui comporte une unité de support de substrat (14) apte à supporter le substrat auto-rotatif sur l'une des surfaces principales du support de substrat (12) ; un dispositif d'entraînement (13) pour faire tourner le support de substrat ; une région de traitement de formation de film (R1) qui est formée dans un espace correspondant à une région périphérique externe du support de substrat dans la chambre de formation de film, et dans laquelle est disposée une électrode de pulvérisation (16) ; une région de traitement de réaction (R2) qui est formée dans un espace correspondant à une région centrale du support de substrat dans la chambre de formation de film, et dans laquelle est disposé un dispositif de génération de plasma (17) ; et un dispositif d'introduction de gaz (18) pour introduire un gaz de décharge et un gaz de réaction dans la chambre de formation de film.
PCT/JP2021/004914 2020-04-01 2021-02-10 Appareil de pulvérisation cathodique et procédé de formation de film l'utilisant WO2021199693A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202180005205.7A CN114375346A (zh) 2020-04-01 2021-02-10 溅射装置和使用了该溅射装置的成膜方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-065581 2020-04-01
JP2020065581A JP7111380B2 (ja) 2020-04-01 2020-04-01 スパッタ装置及びこれを用いた成膜方法

Publications (1)

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TWI821636B (zh) 2023-11-11

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