WO2016190326A1 - 電荷輸送性ワニス及び有機エレクトロルミネッセンス素子 - Google Patents
電荷輸送性ワニス及び有機エレクトロルミネッセンス素子 Download PDFInfo
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- WO2016190326A1 WO2016190326A1 PCT/JP2016/065379 JP2016065379W WO2016190326A1 WO 2016190326 A1 WO2016190326 A1 WO 2016190326A1 JP 2016065379 W JP2016065379 W JP 2016065379W WO 2016190326 A1 WO2016190326 A1 WO 2016190326A1
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- RYZPDEZIQWOVPJ-UHFFFAOYSA-N n-naphthalen-1-yl-n-[4-[4-[naphthalen-1-yl(naphthalen-2-yl)amino]phenyl]phenyl]naphthalen-2-amine Chemical compound C1=CC=C2C(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C4=CC=CC=C4C=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=CC2=C1 RYZPDEZIQWOVPJ-UHFFFAOYSA-N 0.000 description 1
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- KVBGVZZKJNLNJU-UHFFFAOYSA-N naphthalene-2-sulfonic acid Chemical compound C1=CC=CC2=CC(S(=O)(=O)O)=CC=C21 KVBGVZZKJNLNJU-UHFFFAOYSA-N 0.000 description 1
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- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 description 1
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- AQSJGOWTSHOLKH-UHFFFAOYSA-N phosphite(3-) Chemical group [O-]P([O-])[O-] AQSJGOWTSHOLKH-UHFFFAOYSA-N 0.000 description 1
- OBCUTHMOOONNBS-UHFFFAOYSA-N phosphorus pentafluoride Chemical compound FP(F)(F)(F)F OBCUTHMOOONNBS-UHFFFAOYSA-N 0.000 description 1
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- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
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- WPPDXAHGCGPUPK-UHFFFAOYSA-N red 2 Chemical group C1=CC=CC=C1C(C1=CC=CC=C11)=C(C=2C=3C4=CC=C5C6=CC=C7C8=C(C=9C=CC=CC=9)C9=CC=CC=C9C(C=9C=CC=CC=9)=C8C8=CC=C(C6=C87)C(C=35)=CC=2)C4=C1C1=CC=CC=C1 WPPDXAHGCGPUPK-UHFFFAOYSA-N 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
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- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
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- 238000010561 standard procedure Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
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- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 1
- 229910001637 strontium fluoride Inorganic materials 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
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- 229950009390 symclosene Drugs 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- SFLXUZPXEWWQNH-UHFFFAOYSA-K tetrabutylazanium;tribromide Chemical compound [Br-].[Br-].[Br-].CCCC[N+](CCCC)(CCCC)CCCC.CCCC[N+](CCCC)(CCCC)CCCC.CCCC[N+](CCCC)(CCCC)CCCC SFLXUZPXEWWQNH-UHFFFAOYSA-K 0.000 description 1
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- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 150000003577 thiophenes Chemical class 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- BDZBKCUKTQZUTL-UHFFFAOYSA-N triethyl phosphite Chemical compound CCOP(OCC)OCC BDZBKCUKTQZUTL-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 1
- RXJKFRMDXUJTEX-UHFFFAOYSA-N triethylphosphine Chemical compound CCP(CC)CC RXJKFRMDXUJTEX-UHFFFAOYSA-N 0.000 description 1
- GRGCWBWNLSTIEN-UHFFFAOYSA-N trifluoromethanesulfonyl chloride Chemical compound FC(F)(F)S(Cl)(=O)=O GRGCWBWNLSTIEN-UHFFFAOYSA-N 0.000 description 1
- 125000005951 trifluoromethanesulfonyloxy group Chemical group 0.000 description 1
- 125000000876 trifluoromethoxy group Chemical group FC(F)(F)O* 0.000 description 1
- 125000004360 trifluorophenyl group Chemical group 0.000 description 1
- 150000004684 trihydrates Chemical class 0.000 description 1
- CYTQBVOFDCPGCX-UHFFFAOYSA-N trimethyl phosphite Chemical compound COP(OC)OC CYTQBVOFDCPGCX-UHFFFAOYSA-N 0.000 description 1
- PRXNKYBFWAWBNZ-UHFFFAOYSA-N trimethylphenylammonium tribromide Chemical compound Br[Br-]Br.C[N+](C)(C)C1=CC=CC=C1 PRXNKYBFWAWBNZ-UHFFFAOYSA-N 0.000 description 1
- XSVXWCZFSFKRDO-UHFFFAOYSA-N triphenyl-(3-triphenylsilylphenyl)silane Chemical compound C1=CC=CC=C1[Si](C=1C=C(C=CC=1)[Si](C=1C=CC=CC=1)(C=1C=CC=CC=1)C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 XSVXWCZFSFKRDO-UHFFFAOYSA-N 0.000 description 1
- DETFWTCLAIIJRZ-UHFFFAOYSA-N triphenyl-(4-triphenylsilylphenyl)silane Chemical compound C1=CC=CC=C1[Si](C=1C=CC(=CC=1)[Si](C=1C=CC=CC=1)(C=1C=CC=CC=1)C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 DETFWTCLAIIJRZ-UHFFFAOYSA-N 0.000 description 1
- HITRWHKLCHWBNZ-UHFFFAOYSA-N triphenyl-[4-(9-phenylfluoren-9-yl)phenyl]silane Chemical compound C1=CC=CC=C1C1(C=2C=CC(=CC=2)[Si](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)C2=CC=CC=C2C2=CC=CC=C21 HITRWHKLCHWBNZ-UHFFFAOYSA-N 0.000 description 1
- RFDGVZHLJCKEPT-UHFFFAOYSA-N tris(2,4,6-trimethyl-3-pyridin-3-ylphenyl)borane Chemical compound CC1=C(B(C=2C(=C(C=3C=NC=CC=3)C(C)=CC=2C)C)C=2C(=C(C=3C=NC=CC=3)C(C)=CC=2C)C)C(C)=CC(C)=C1C1=CC=CN=C1 RFDGVZHLJCKEPT-UHFFFAOYSA-N 0.000 description 1
- COIOYMYWGDAQPM-UHFFFAOYSA-N tris(2-methylphenyl)phosphane Chemical compound CC1=CC=CC=C1P(C=1C(=CC=CC=1)C)C1=CC=CC=C1C COIOYMYWGDAQPM-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001132 ultrasonic dispersion Methods 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- HTPBWAPZAJWXKY-UHFFFAOYSA-L zinc;quinolin-8-olate Chemical compound [Zn+2].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 HTPBWAPZAJWXKY-UHFFFAOYSA-L 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C209/00—Preparation of compounds containing amino groups bound to a carbon skeleton
- C07C209/04—Preparation of compounds containing amino groups bound to a carbon skeleton by substitution of functional groups by amino groups
- C07C209/06—Preparation of compounds containing amino groups bound to a carbon skeleton by substitution of functional groups by amino groups by substitution of halogen atoms
- C07C209/10—Preparation of compounds containing amino groups bound to a carbon skeleton by substitution of functional groups by amino groups by substitution of halogen atoms with formation of amino groups bound to carbon atoms of six-membered aromatic rings or from amines having nitrogen atoms bound to carbon atoms of six-membered aromatic rings
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C211/00—Compounds containing amino groups bound to a carbon skeleton
- C07C211/43—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton
- C07C211/54—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton having amino groups bound to two or three six-membered aromatic rings
- C07C211/55—Diphenylamines
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C231/00—Preparation of carboxylic acid amides
- C07C231/02—Preparation of carboxylic acid amides from carboxylic acids or from esters, anhydrides, or halides thereof by reaction with ammonia or amines
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C231/00—Preparation of carboxylic acid amides
- C07C231/12—Preparation of carboxylic acid amides by reactions not involving the formation of carboxamide groups
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- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C231/00—Preparation of carboxylic acid amides
- C07C231/14—Preparation of carboxylic acid amides by formation of carboxamide groups together with reactions not involving the carboxamide groups
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C233/00—Carboxylic acid amides
- C07C233/64—Carboxylic acid amides having carbon atoms of carboxamide groups bound to carbon atoms of six-membered aromatic rings
- C07C233/77—Carboxylic acid amides having carbon atoms of carboxamide groups bound to carbon atoms of six-membered aromatic rings having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by amino groups
- C07C233/80—Carboxylic acid amides having carbon atoms of carboxamide groups bound to carbon atoms of six-membered aromatic rings having the nitrogen atom of at least one of the carboxamide groups bound to a carbon atom of a hydrocarbon radical substituted by amino groups with the substituted hydrocarbon radical bound to the nitrogen atom of the carboxamide group by a carbon atom of a six-membered aromatic ring
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/02—Polyamines
- C08G73/026—Wholly aromatic polyamines
- C08G73/0266—Polyanilines or derivatives thereof
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
- C09D179/02—Polyamines
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/24—Electrically-conducting paints
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- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/12—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances organic substances
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07B—GENERAL METHODS OF ORGANIC CHEMISTRY; APPARATUS THEREFOR
- C07B61/00—Other general methods
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
Definitions
- the present invention relates to a charge transporting varnish and an organic electroluminescence (EL) element.
- a charge transporting thin film made of an organic compound is used as a light emitting layer or a charge injection layer.
- the hole injection layer is responsible for charge transfer between the anode and the hole transport layer or the light emitting layer, and plays an important function to achieve low voltage driving and high luminance of the organic EL element.
- the formation method of the hole injection layer is roughly divided into a dry process typified by vapor deposition and a wet process typified by spin coating. Comparing these processes, the wet process can efficiently produce a thin film having a large area and high flatness. Therefore, at the present time when the area of the organic EL display is being increased, a hole injection layer that can be formed by a wet process is desired.
- the present inventors are applicable to various wet processes and charge transporting materials that provide a thin film that can realize excellent characteristics when applied to a hole injection layer of an organic EL element.
- compounds having good solubility in organic solvents used therefor and charge transporting varnishes have been developed (see, for example, Patent Documents 1 to 4).
- the present invention provides a charge transporting varnish capable of providing a thin film capable of realizing excellent characteristics when applied to a hole injection layer of an organic EL element, as well as the technology of the above-mentioned patent document developed so far, and the varnish It aims at providing the organic EL element containing the thin film obtained from this.
- the present inventors have determined that a charge transporting material comprising a specific fluorine atom-containing oligoaniline derivative, a charge transporting material not containing a fluorine atom, an organic solvent, and a necessary solvent
- the thin film obtained from the charge transporting varnish containing the dopant according to the present invention has high charge transportability, and when the thin film is applied to the hole injection layer of the organic EL device, it is found that excellent electrical characteristics can be realized, The present invention has been completed.
- a charge transporting varnish comprising a charge transporting material comprising a fluorine atom-containing oligoaniline derivative represented by the following formula (1), a charge transporting material not containing a fluorine atom, and an organic solvent.
- R 1 represents a hydrogen atom or an alkyl group having 1 to 20 carbon atoms which may be substituted with Z
- Z represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxy group, a thiol
- a sulfonic acid group a carboxyl group, an aryl group having 6 to 20 carbon atoms which may be substituted with Z ′, or a heteroaryl group having 2 to 20 carbon atoms which may be substituted with Z ′
- R 2 to R 10 are each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, or an alkyl group having 1 to 20 carbon atoms and an alkenyl group having 2 to 20 carbon atoms
- A is A cyano group, a chlorine atom, a bromine atom, an iodine atom, a nitro group, or a fluoroalkyl group having 1 to 20 carbon atoms, a fluorocyclo group having 3 to 20 carbon atoms, optionally substituted with a fluoroalkoxy group having 1 to 20 carbon atoms
- a fluoroaryl group having 6 to 20 carbon atoms A fluoroalkyl group having 1 to 20 carbon atoms, a fluorocycloalkyl group having 3 to 20 carbon atoms, a fluorobicycloalkyl group having 4 to 20 carbon atoms, a fluoroalkenyl group having 2 to 20 carbon atoms, or a fluoroalkynyl group having 2 to 20 carbon atoms
- An aryl group having 6 to 20 carbon atoms which may be substituted with a cyano group, a halogen atom or a fluoroalkoxy group having 1 to 20 carbon atoms, Cyano group, chlorine atom, bromine atom, iodine atom, nitro group, fluoroalkoxy group having 1 to 20 carbon atoms, fluoroalkyl group having 1 to 20 carbon atoms, fluorocycloalkyl group having 3 to 20 carbon atoms, 4 to 4 carbon atoms
- A may be substituted with a cyano group, a chlorine atom, a bromine atom, an iodine atom, a nitro group or a fluoroalkoxy group having 1 to 20 carbon atoms, a fluoroalkyl group having 1 to 20 carbon atoms, a cyano group, or a chlorine atom , A bromine atom, an iodine atom, a nitro group, an alkyl group having 1 to 20 carbon atoms, a fluoroalkyl group having 1 to 20 carbon atoms, or a fluoroalkoxy group having 1 to 20 carbon atoms, 20 fluoroaryl groups, or a fluoroalkyl group having 1 to 20 carbon atoms, a fluorocycloalkyl group having 3 to 20 carbon atoms, a fluorobicycloalkyl group having 4
- Shi may be substituted with a group
- the first charge-transporting varnish is an aryl group of 6 to 20 carbon atoms.
- A is substituted with a cyano group, a chlorine atom, a bromine atom, an iodine atom, a nitro group, an alkyl group having 1 to 20 carbon atoms, a fluoroalkyl group having 1 to 20 carbon atoms or a fluoroalkoxy group having 1 to 20 carbon atoms.
- a charge transporting varnish of 2 which is a phenyl group, which is substituted with a fluoroalkynyl group having 2 to 20 carbon atoms and optionally substituted with a cyano group, a halogen atom or a fluoroalkoxy group having 1 to 20 carbon atoms. 4).
- the charge transporting varnish according to any one of 1 to 6, wherein the charge transporting substance containing no fluorine atom is represented by the following formula (4).
- X 1 represents —NY 1 —, —O—, —S—, — (CR 17 R 18 ) L — or a single bond, and when m or n is 0, —NY 1 -Represents;
- Y 1 independently represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms or an alkynyl group having 2 to 20 carbon atoms, which may be substituted with Z 11 , or Z 1 Represents an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms, which may be substituted with 12 ;
- R 17 and R 18 may each independently be substituted with a hydrogen atom, a halogen atom, a nitro group, a cyano group, an amino group, an aldehyde group, a hydroxy group, a thiol group, a sulfonic acid group, a carboxyl group,
- R 1 to R 10 , A and k are the same as defined above, X represents a halogen atom, X ′ represents a pseudohalogen group, a represents an integer of 0 to 19, and k> Satisfies a)
- the thin film prepared from the charge transporting varnish of the present invention exhibits a very high charge transporting property. Therefore, it can be suitably used as a thin film for electronic devices including organic EL elements.
- this thin film by applying this thin film to a hole injection layer of an organic EL element, an organic EL element having excellent luminance characteristics can be obtained.
- the charge transporting varnish of the present invention can produce a thin film excellent in charge transporting properties with good reproducibility even when using various wet processes capable of forming a large area such as a spin coating method and a slit coating method, It can sufficiently cope with recent progress in the field of organic EL elements.
- the charge transporting varnish of the present invention includes a charge transporting material composed of a fluorine atom-containing oligoaniline derivative represented by the following formula (1).
- the charge transportability is synonymous with conductivity, and is also synonymous with hole transportability.
- the charge transporting varnish of the present invention may itself have charge transporting properties, or the solid film obtained using the varnish may have charge transporting properties.
- R 1 represents a hydrogen atom or an alkyl group having 1 to 20 carbon atoms which may be substituted with Z.
- Z is a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxy group, a thiol group, a sulfonic acid group, a carboxyl group, an aryl group having 6 to 20 carbon atoms which may be substituted with Z ′, or substituted with Z ′.
- Z ′ represents a halogen atom, nitro group, cyano group, aldehyde group, hydroxy group, thiol group, sulfonic acid group or carboxyl group.
- R 2 to R 10 are each independently a hydrogen atom, a halogen atom, a nitro group, a cyano group, or an alkyl group having 1 to 20 carbon atoms and an alkenyl group having 2 to 20 carbon atoms which may be substituted with a halogen atom.
- halogen atom examples include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
- the alkyl group having 1 to 20 carbon atoms may be linear, branched or cyclic, and specific examples thereof include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group and an isobutyl group.
- Straight chain having 1 to 20 carbon atoms such as s-butyl group, t-butyl group, n-pentyl group, n-hexyl group, n-heptyl group, n-octyl group, n-nonyl group and n-decyl group Or a branched alkyl group; cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, bicyclobutyl group, bicyclopentyl group, bicyclohexyl group, bicycloheptyl group, Examples thereof include cyclic alkyl groups having 3 to 20 carbon atoms such as a bicyclooctyl group, a bicyclononyl group, and a bicyclodecyl group.
- the alkenyl group having 2 to 20 carbon atoms may be linear, branched or cyclic, and specific examples thereof include ethenyl group, n-1-propenyl group, n-2-propenyl group and 1-methylethenyl group.
- the alkynyl group having 2 to 20 carbon atoms may be linear, branched or cyclic, and specific examples thereof include ethynyl group, n-1-propynyl group, n-2-propynyl group, n-1- Butynyl group, n-2-butynyl group, n-3-butynyl group, 1-methyl-2-propynyl group, n-1-pentynyl group, n-2-pentynyl group, n-3-pentynyl group, n-4 -Pentynyl group, 1-methyl-n-butynyl group, 2-methyl-n-butynyl group, 3-methyl-n-butynyl group, 1,1-dimethyl-n-propynyl group, n-1-hexynyl group, n Examples include a -1-decynyl group, an n-1-pentadecynyl group, and
- aryl group having 6 to 20 carbon atoms include phenyl group, 1-naphthyl group, 2-naphthyl group, 1-anthryl group, 2-anthryl group, 9-anthryl group, 1-phenanthryl group, 2-phenanthryl group. Group, 3-phenanthryl group, 4-phenanthryl group, 9-phenanthryl group and the like.
- heteroaryl group having 2 to 20 carbon atoms examples include 2-thienyl group, 3-thienyl group, 2-furanyl group, 3-furanyl group, 2-oxazolyl group, 4-oxazolyl group, 5-oxazolyl group, 3-isoxazolyl group, 4-isoxazolyl group, 5-isoxazolyl group, 2-thiazolyl group, 4-thiazolyl group, 5-thiazolyl group, 3-isothiazolyl group, 4-isothiazolyl group, 5-isothiazolyl group, 2-imidazolyl group, Examples include 4-imidazolyl group, 2-pyridyl group, 3-pyridyl group, 4-pyridyl group, and the like.
- R 1 is preferably a hydrogen atom or an alkyl group having 1 to 10 carbon atoms which may be substituted with Z, in consideration of the solubility of the oligoaniline derivative in an organic solvent.
- An alkyl group having 1 to 4 carbon atoms which may be substituted with Z is more preferable, and a hydrogen atom is most preferable.
- a plurality of R 1 may be the same or different.
- R 1 is a hydrogen atom
- particularly excellent charge transport properties can be realized when used together with a dopant such as an arylsulfonic acid or a protonic acid such as a heteropolyacid.
- R 2 to R 10 may be substituted with a hydrogen atom, a halogen atom, a nitro group, a cyano group, or a halogen atom in consideration of the solubility of the oligoaniline derivative in an organic solvent.
- An alkyl group having 1 to 10 carbon atoms is preferable, a hydrogen atom, a halogen atom, or an alkyl group having 1 to 4 carbon atoms which may be substituted with a halogen atom is more preferable, and the solubility of the oligoaniline derivative in an organic solvent is Considering the balance with the charge transporting property, a hydrogen atom is optimal.
- the plurality of R 2 to R 5 may be the same or different.
- A represents a cyano group, a chlorine atom, a bromine atom, an iodine atom, a nitro group, or a fluoroalkyl group having 1 to 20 carbon atoms which may be substituted with a fluoroalkoxy group having 1 to 20 carbon atoms.
- the fluoroalkyl group is not particularly limited as long as it is a linear or branched alkyl group in which at least one hydrogen atom on a carbon atom is substituted with a fluorine atom.
- the fluorocycloalkyl group is not particularly limited as long as it is a cycloalkyl group in which at least one hydrogen atom on a carbon atom is substituted with a fluorine atom.
- a 1-fluorocyclopropyl group a 2-fluorocyclopropyl group 2,2-difluorocyclopropyl group, 2,2,3,3-tetrafluorocyclopropyl group, pentafluorocyclopropyl group, 2,2-difluorocyclobutyl group, 2,2,3,3-tetrafluorocyclo Butyl group, 2,2,3,3,4,4-hexafluorocyclobutyl group, heptafluorocyclobutyl group, 1-fluorocyclopentyl group, 3-fluorocyclopentyl group, 3,3-difluorocyclopentyl group, 3,3 , 4,4-tetrafluorocyclopentyl group, nonafluoro
- the fluorobicycloalkyl group is not particularly limited as long as it is a bicycloalkyl group in which at least one hydrogen atom on a carbon atom is substituted with a fluorine atom.
- the fluoroalkenyl group is not particularly limited as long as it is an alkenyl group in which at least one hydrogen atom on a carbon atom is substituted with a fluorine atom.
- the fluoroalkynyl group is not particularly limited as long as it is an alkynyl group in which at least one hydrogen atom on a carbon atom is substituted with a fluorine atom.
- a fluoroethynyl group, a 3-fluoro-1-propynyl group, 3, Examples include a 3-difluoro-1-propynyl group, a 3,3,3-trifluoro-1-propynyl group, a 1-fluoro-2-propynyl group, and a 1,1-difluoro-2-propynyl group.
- the fluoroaryl group is not particularly limited as long as it is an aryl group in which at least one hydrogen atom on a carbon atom is substituted with a fluorine atom.
- the fluoroaryl group includes a cyano group, a chlorine atom, a bromine atom in consideration of the balance of the solubility of the oligoaniline derivative in an organic solvent, the charge transportability of the oligoaniline derivative, the availability of the raw material of the oligoaniline derivative, etc.
- Substituted with 3 or more fluorine atoms which may be substituted with an iodine atom, a nitro group, an alkyl group having 1 to 20 carbon atoms, a fluoroalkyl group having 1 to 20 carbon atoms or a fluoroalkoxy group having 1 to 20 carbon atoms
- the substituted phenyl group is preferred.
- the fluoroalkoxy group is not particularly limited as long as it is an alkoxy group in which at least one hydrogen atom on a carbon atom is substituted with a fluorine atom.
- at least one hydrogen atom on the carbon atom is a fluoroalkyl group having 1 to 20 carbon atoms, a fluorocycloalkyl group having 3 to 20 carbon atoms, a fluorobicycloalkyl group having 4 to 20 carbon atoms, An
- the substituted aryl group has 3 to 20 carbon atoms in consideration of the balance of the solubility of the oligoaniline derivative in an organic solvent, the charge transportability of the oligoaniline derivative, the availability of the raw material for the oligoaniline derivative, and the like.
- a fluorocycloalkyl group substituted with a fluorocycloalkyl group, a fluorobicycloalkyl group having 4 to 20 carbon atoms, a fluoroalkenyl group having 2 to 20 carbon atoms, or a fluoroalkynyl group having 2 to 20 carbon atoms, and a cyano group, a halogen atom or 1 carbon atom
- a phenyl group optionally substituted with 20 to 20 fluoroalkoxy groups hereinafter also referred to as a substituted phenyl group for convenience
- a substituted phenyl group for convenience
- a p-trifluoromethylphenyl group is even more preferred.
- the fluoroaralkyl group is not particularly limited as long as it is an aralkyl group in which at least one hydrogen atom on a carbon atom is substituted with a fluorine atom.
- the aralkyl group having 7 to 20 carbon atoms which is substituted with an alkynyl group and optionally substituted with a cyano group, a halogen atom or a fluoroalkoxy group having 1 to 20 carbon atoms includes at least one aralkyl group on the carbon atom.
- aralkyl group substituted with a fluoroalkynyl group of Rubenzyl 3-trifluoromethylbenzyl, 4-trifluoromethylbenzyl, 2,4-di (trifluoromethyl) benzyl, 2,5-di (trifluoromethyl) benzyl, 2,6-di Examples include (trifluoromethyl) benzyl group, 3,5-di (trifluoromethyl) benzyl group, 2,4,6-tri (trifluoromethyl) benzyl group, and the like.
- A is preferably the optionally substituted fluoroalkyl group having 1 to 20 carbon atoms, the optionally substituted fluoroaryl group having 6 to 20 carbon atoms, or the substituted aryl group.
- the optionally substituted fluoroaryl group having 6 to 20 carbon atoms or the substituted aryl group is more preferable, the optionally substituted fluorophenyl group or the substituted phenyl group is more preferable,
- k is an integer of 1 to 20, and is preferably 10 or less, more preferably 8 or less, still more preferably 5 or less, from the viewpoint of the solubility of the oligoaniline derivative in the solvent.
- the following is more preferable, and 2 or more is preferable, and 3 or more is more preferable from the viewpoint of enhancing the charge transport property of the oligoaniline derivative, and 3 is optimal in consideration of the balance between solubility and charge transport property.
- the fluorine atom-containing oligoaniline derivative is obtained by reacting an amine compound represented by the formula (2A) with a fluorine atom-containing acid halide represented by the formula (3A) as represented by the following scheme A. Can be synthesized. At this time, the reaction is preferably performed in the presence of a base for the purpose of allowing the reaction to proceed more efficiently.
- R 1 to R 10 , A and k are the same as described above.
- X represents a halogen atom such as a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, preferably a chlorine atom or a bromine atom.
- Examples of the amine compound represented by the formula (2A) include, but are not limited to, those represented by the following formula.
- Examples of the fluorine atom-containing acid halide represented by the formula (3A) include 2-fluorobenzoyl chloride, 3-fluorobenzoyl chloride, 4-fluorobenzoyl chloride, 2-fluoro-4-methylbenzoyl chloride, 2-fluoro-5.
- Examples of the base include alkoxides such as t-butoxy sodium (t-BuONa) and t-butoxy potassium; fluoride salts such as lithium fluoride, potassium fluoride and cesium fluoride; sodium carbonate, potassium carbonate, sodium bicarbonate, Carbonates such as potassium hydrogen carbonate; trimethylamine, triethylamine, diisopropylethylamine, tetramethylethylenediamine, pyridine, morpholine, N-methylmorpholine, quinuclidine, 1,4-diazabicyclo [2.2.2] octane, 4-dimethylaminopyridine, etc.
- the amines are not particularly limited as long as they are used for this kind of reaction. In particular, triethylamine, pyridine, diisopropylethylamine and the like are preferable because they are easy to handle.
- the reaction solvent is preferably an aprotic polar organic solvent, for example, N, N-dimethylformamide, N, N-dimethylacetamide, N-methylpyrrolidone, 1,3-dimethyl-2-imidazolidinone, dimethyl sulfoxide, tetrahydrofuran And dioxane.
- N, N-dimethylformamide, N, N-dimethylacetamide, tetrahydrofuran, dioxane and the like are preferable.
- the reaction temperature is appropriately set in the range from the melting point to the boiling point of the solvent in consideration of the type and amount of the raw material compound and catalyst used, but is usually about 0 to 200 ° C., preferably 20 to 150 ° C. .
- the reaction time varies depending on the starting compound used, the type and amount of the catalyst, the reaction temperature, and the like, and thus cannot be generally defined, but is usually about 1 to 24 hours.
- the target fluorine atom-containing oligoaniline derivative can be obtained by post-treatment according to a conventional method.
- the fluorine atom-containing acid halide represented by the formula (3A) has a corresponding fluorine-containing carboxylic acid such as thionyl chloride, oxalyl chloride, phosphoryl chloride, sulfuryl chloride, phosphorus trichloride, phosphorus pentachloride and the like. It can be obtained by reacting with an electronic halogenating agent.
- a commercially available product may be used, and a known method (for example, JP-A-9-67303, JP-A-9-67304, JP-A-2002-284733, etc.) may be used. It can also be synthesized by the method described.
- the fluorine atom-containing oligoaniline derivative includes an amine compound represented by the formula (2B) and a fluorine atom-containing compound represented by the formula (3B) or (3B ′) as represented by the following scheme B or C: Can also be synthesized by reacting in the presence of a base.
- R 1 to R 10 , A and k are the same as defined above, X represents a halogen atom, X ′ represents a pseudohalogen group, a represents an integer of 0 to 19, and k> Satisfies a)
- halogen atom examples include (fluoro) alkylsulfonyloxy groups such as methanesulfonyloxy group, trifluoromethanesulfonyloxy group, and nonafluorobutanesulfonyloxy group; aromatic sulfonyloxy groups such as benzenesulfonyloxy group and toluenesulfonyloxy group Is mentioned.
- Examples of the amine compound represented by the formula (2B) include the same compounds as those exemplified as the compound represented by the formula (2A) in addition to aniline.
- the charging ratio of the amine compound represented by the formula (2B) and the fluorine atom-containing compound represented by the formula (3B) or (3B ′) is such that the fluorine atom-containing compound is equal to or greater than the amine compound. However, it is preferably about 1 to 1.2 equivalents.
- Examples of the catalyst used in the reaction include copper catalysts such as copper chloride, copper bromide, copper iodide; tetrakis (triphenylphosphine) palladium (Pd (PPh 3 ) 4 ), bis (triphenylphosphine) dichloropalladium.
- Metal catalysts such as palladium catalysts such as palladium (Pd (Pt-Bu 3 ) 2 ) and palladium acetate (Pd (OAc) 2 ). These catalysts may be used alone or in combination of two or more.
- a known appropriate ligand may be used together with the catalyst.
- ligands include triphenylphosphine, tri-o-tolylphosphine, diphenylmethylphosphine, phenyldimethylphosphine, trimethylphosphine, triethylphosphine, tributylphosphine, tri-t-butylphosphine, di-t-butyl ( Phenyl) phosphine, di-t-butyl (4-dimethylaminophenyl) phosphine, 1,2-bis (diphenylphosphino) ethane, 1,3-bis (diphenylphosphino) propane, 1,4-bis (diphenylphosphine) And tertiary phosphines such as fino) butane and 1,1′-bis (diphenylphosphino) ferrocene, and tert
- the amount of the catalyst used can be about 0.01 to 0.5 mol with respect to 1 mol of the amine compound represented by the formula (2B), and is preferably about 0.03 to 0.07 mol.
- the amount used can be 0.1 to 5 equivalents with respect to the metal complex used, but 1 to 4 equivalents are preferred.
- bases and suitable bases include those exemplified for the reaction shown in Scheme A.
- the reaction solvent is not particularly limited as long as it does not adversely affect this type of reaction.
- Specific examples thereof include aliphatic hydrocarbons (pentane, n-hexane, n-octane, n-decane, decalin, etc.
- Halogenated aliphatic hydrocarbons chloroform, dichloromethane, dichloroethane, carbon tetrachloride, etc.
- aromatic hydrocarbons benzene, nitrobenzene, toluene, o-xylene, m-xylene, p-xylene, mesitylene, etc.
- Halogenated aromatic hydrocarbons chlorobenzene, bromobenzene, o-dichlorobenzene, m-dichlorobenzene, p-dichlorobenzene, etc.
- ethers diethyl ether, diisopropyl ether, t-butyl methyl ether, tetrahydrofuran, dioxane, 1 , 2-Dimethoxyethane, 1,2-diethoxyethane Etc.
- ketones acetone, methyl ethyl ketone, methyl isobutyl ketone, di-n-butyl
- the reaction temperature is appropriately set in the range from the melting point to the boiling point of the solvent in consideration of the type and amount of the raw material compound and catalyst used, the type of solvent, etc., but is usually about 0 to 200 ° C., preferably 20 ⁇ 150 ° C.
- the reaction time varies depending on the starting compound used, the type and amount of the catalyst, the reaction temperature, etc., and thus cannot be defined unconditionally, but is usually about 1 to 12 hours.
- the target oligoaniline derivative can be obtained by post-treatment according to a conventional method.
- the fluorine atom-containing compound represented by the formula (3B) can be produced by halogenating the compound represented by the formula (4B) with a halogenating agent, as represented by the following scheme D. (Wherein R 1 to R 10 , A, X and a are the same as described above.)
- the fluorine atom-containing compound represented by the formula (3B ′) is produced by pseudohalogenating the compound represented by the formula (4B ′) with a pseudohalogenating agent, as represented by the following scheme E. can do. (Wherein R 1 to R 10 , A, X ′ and a are the same as described above.)
- halogenating agent examples include iodine, N-iodosuccinimide, benzyltrimethylammonium dichloroiodide, 1,3-diiodo-5,5-dimethylhydantoin, hydrogen iodide, bromine, N-bromosuccinimide, benzyltrimethylammonium.
- Tribromide N-bromoacetamide, 2-bromo-2-cyano-N, N-dimethylacetamide, bromodimethylsulfonium bromide, N-bromophthalimide, N-bromosaccharin, 1,3-dibromo-5,5-dimethylhydantoin , Dibromoisocyanuric acid, 5,5-dibromomerdolic acid, 4-dimethylaminopyridinium bromide perbromide, pyridinium bromide perbromide, 2,4,4,6-tetrabromo-2,5-cyclohexadienone, tetrabutylammonium Tribromide, trimethylphenylammonium tribromide, triphenylphosphine dibromide, chlorine, N-chlorosuccinimide, benzyltrimethylammonium tetrachloroiodide, chloramine B, chloramine T ⁇ trihydrate, o
- pseudohalogenating agent examples include methanesulfonyl chloride, methanesulfonyl bromide, methanesulfonic anhydride, trifluoromethanesulfonyl chloride, trifluoromethanesulfonic anhydride, nonafluorobutanesulfonyl chloride, (fluoro) alkylsulfonyl chloride; benzene Examples include sulfonyl chloride and toluenesulfonyl chloride.
- the amount of the halogenating agent or pseudo-halogenating agent used can be about 1 to 3 mol with respect to 1 mol of the compound represented by the formula (4B) or (4B ′), but about 1.0 to 1.1 mol. Is preferred.
- the reaction solvent is not particularly limited as long as it does not adversely affect this kind of reaction, and specific examples thereof include the same solvents as the specific examples of the solvent in the method for producing a fluorine atom-containing oligoaniline derivative. .
- specific examples thereof include the same solvents as the specific examples of the solvent in the method for producing a fluorine atom-containing oligoaniline derivative.
- N, N-dimethylformamide, N, N-dimethylacetamide, chloroform and dichloromethane are preferred.
- the reaction temperature is appropriately set in the range from the melting point to the boiling point of the solvent in consideration of the type and amount of the raw material compound and catalyst used, the type of solvent, etc., but is usually about 0 to 200 ° C., preferably 0 ⁇ 50 ° C.
- the reaction time varies depending on the starting compound used, the type and amount of the catalyst, the reaction temperature, etc., and thus cannot be defined unconditionally, but is usually about 1 to 12 hours.
- the target compound can be obtained by post-treatment according to a conventional method.
- the compound represented by the formula (4B) comprises an amine compound represented by the formula (2A ′) and a fluorine atom-containing acid halide represented by the formula (3A), If necessary, it can be produced by reacting in the presence of the same base as described above. (Wherein R 1 to R 10 , A, X and a are the same as described above.)
- Examples of the amine compound represented by the formula (2A ′) include those exemplified as the amine compound represented by the formula (2A) in addition to aniline. Moreover, as a fluorine atom containing acid halide represented by Formula (3A), the same thing as the above is mentioned.
- the reaction solvent is not particularly limited as long as it does not adversely affect this kind of reaction, and specific examples thereof include the same solvents as the specific examples of the solvent in the method for producing a fluorine atom-containing oligoaniline derivative. .
- specific examples thereof include the same solvents as the specific examples of the solvent in the method for producing a fluorine atom-containing oligoaniline derivative.
- N, N-dimethylformamide, N, N-dimethylacetamide, chloroform and dichloromethane are preferred.
- the reaction temperature is appropriately set in the range from the melting point to the boiling point of the solvent in consideration of the type and amount of the raw material compound and catalyst used, the type of solvent, etc., but is usually about 0 to 200 ° C., preferably 0 ⁇ 50 ° C.
- the reaction time varies depending on the starting compound used, the type and amount of the catalyst, the reaction temperature, etc., and thus cannot be defined unconditionally, but is usually about 1 to 12 hours.
- the target compound can be obtained by post-treatment according to a conventional method.
- the amine compound represented by the formula (4B ′) includes an amine compound represented by the formula (2A ′′) and a fluorine atom-containing acid represented by the formula (3A) as represented by the following scheme G:
- a halide can be produced by reacting in the presence of the same base as described above, if necessary. References for such reactions include, for example, J. Med. Chem., 52 (4), 1115-1125, (2009). (Wherein R 1 to R 10 , A, X and a are the same as described above.)
- the reaction solvent is not particularly limited as long as it does not adversely affect this kind of reaction, and specific examples thereof include the same solvents as the specific examples of the solvent in the method for producing a fluorine atom-containing oligoaniline derivative. .
- specific examples thereof include the same solvents as the specific examples of the solvent in the method for producing a fluorine atom-containing oligoaniline derivative.
- N, N-dimethylformamide, N, N-dimethylacetamide, chloroform and dichloromethane are preferred.
- the reaction temperature is appropriately set in the range from the melting point to the boiling point of the solvent in consideration of the type and amount of the raw material compound and catalyst used, the type of solvent, etc., but is usually about 0 to 200 ° C., preferably 0 ⁇ 50 ° C.
- the reaction time varies depending on the starting compound used, the type and amount of the catalyst, the reaction temperature, etc., and thus cannot be defined unconditionally, but is usually about 1 to 12 hours.
- the target compound can be obtained by post-treatment according to a conventional method.
- the amine compound represented by the formula (2A ′′) can be synthesized by a known method.
- a compound having a desired chain length can be synthesized by following the scheme H below.
- the charge transporting varnish of the present invention contains a charge transporting material containing no fluorine atom.
- the charge transporting substance not containing a fluorine atom include charge transporting oligomers such as aniline derivatives, thiophene derivatives, and pyrrole derivatives.
- the molecular weight of the charge transporting oligomer is usually 200 to 5,000, but is preferably 300 or more, more preferably 400 or more, and still more preferably 500 from the viewpoint of preparing a varnish that gives a thin film having high charge transporting properties. From the viewpoint of preparing a uniform varnish that gives a thin film with high flatness, it is preferably 4,000 or less, more preferably 3,000 or less, and even more preferably 2,000 or less.
- an aniline derivative is preferable in consideration of the solubility in an organic solvent and the balance of charge transporting properties of the obtained thin film.
- aniline derivatives include oligoaniline derivatives described in JP-A No. 2002-151272, oligoaniline compounds described in WO 2004/105446, oligoaniline compounds described in WO 2008/032617, Examples include oligoaniline compounds described in 2008/032616 and aryldiamine compounds described in International Publication No. 2013/042623.
- aniline derivative represented by following formula (5) can also be used conveniently.
- X 1 represents —NY 1 —, —O—, —S—, — (CR 17 R 18 ) L — or a single bond, and when m or n is 0, NY 1 -is represented.
- Y 1 independently represents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms or an alkynyl group having 2 to 20 carbon atoms, which may be substituted with Z 11 , or Z 1 Represents an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms, which may be substituted with 12 ;
- alkyl group having 1 to 20 carbon atoms examples include The same thing as mentioned above is mentioned.
- R 17 and R 18 are each independently a hydrogen atom, chlorine atom, bromine atom, iodine atom, nitro group, cyano group, amino group, aldehyde group, hydroxy group, thiol group, sulfonic acid group, carboxyl group, Z 11
- Y 2 to Y 13 are each independently an alkyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, or an alkynyl group having 2 to 20 carbon atoms, which may be substituted with Z 11 , or Z Represents an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms, which may be substituted with 12 ;
- Z 11 is a chlorine atom, bromine atom, iodine atom, nitro group, cyano group, amino group, aldehyde group, hydroxy group, thiol group, sulfonic acid group, carboxyl group, or carbon that may be substituted with Z 13 , Represents an aryl group having 6 to 20 carbon atoms or a heteroaryl group having 2 to 20 carbon atoms.
- Z 12 is a chlorine atom, bromine atom, iodine atom, nitro group, cyano group, amino group, aldehyde group, hydroxy group, thiol group, sulfonic acid group, carboxyl group, or carbon that may be substituted with Z 13 ,
- An alkyl group having 1 to 20 carbon atoms, an alkenyl group having 2 to 20 carbon atoms, or an alkynyl group having 2 to 20 carbon atoms is represented.
- Z 13 represents a chlorine atom, bromine atom, iodine atom, nitro group, cyano group, amino group, aldehyde group, hydroxy group, thiol group, sulfonic acid group, or carboxyl group.
- alkyl group, alkenyl group, alkynyl group, aryl group and heteroaryl group of R 17 , R 18 and Y 2 to Y 13 are the same as those described above.
- R 17 and R 18 a hydrogen atom or an alkyl group Z 11 to have ⁇ 1 to 20 carbon atoms substituted by are preferred, and a methyl group which may be substituted with a hydrogen atom or Z 11 More preferred are both hydrogen atoms.
- L represents the number of divalent groups represented by — (CR 17 R 18 ) — and is an integer of 1 to 20, preferably 1 to 10, more preferably 1 to 5, and more preferably 1 to 2 Even more preferred, 1 is optimal.
- the plurality of R 17 may be the same or different from each other, and the plurality of R 18 may be the same or different from each other.
- X 1 is preferably —NY 1 — or a single bond.
- Y 1 hydrogen atom or an alkyl group of Z 11 has been having 1 to 20 carbon atoms substituted with, more preferably a methyl group which may be substituted with a hydrogen atom or a Z 11, a hydrogen atom Is the best.
- R 11 to R 16 are each independently a hydrogen atom, chlorine atom, bromine atom, iodine atom, nitro group, cyano group, amino group, aldehyde group, hydroxy group, thiol group, sulfonic acid group ,
- R 11 to R 14 may be substituted with a hydrogen atom, a halogen atom, an alkyl group having 1 to 10 carbon atoms which may be substituted with Z 11 , or Z 12.
- An aryl group having 6 to 14 carbon atoms is preferable, a hydrogen atom or an alkyl group having 1 to 10 carbon atoms is more preferable, and all hydrogen atoms are optimal.
- R 15 and R 16 are each a hydrogen atom, a chlorine atom, a bromine atom, an iodine atom, an alkyl group having 1 to 10 carbon atoms which may be substituted with Z 11 , or a carbon atom which may be substituted with Z 12.
- An aryl group of 6 to 14 or a diphenylamino group which may be substituted with Z 12 (—NY 3 Y 4 group where Y 3 and Y 4 are phenyl groups which may be substituted with Z 12 ) is preferable.
- a hydrogen atom or a diphenylamino group is more preferred, and at the same time a hydrogen atom or a diphenylamino group is even more preferred.
- R 11 to R 14 are hydrogen atoms or alkyl groups having 1 to 10 carbon atoms
- R 15 and R 16 are hydrogen atoms or diphenylamino groups
- X 1 is —NY 1 — or a single bond
- Y 1 Is preferably a combination of a hydrogen atom or a methyl group, more preferably a combination of R 11 to R 14 is a hydrogen atom
- R 15 and R 16 are simultaneously a hydrogen atom or a diphenylamino group
- X 1 is —NH— or a single bond.
- m and n each independently represent an integer of 0 or more and satisfy 1 ⁇ m + n ⁇ 20, but considering the balance between the charge transportability of the obtained thin film and the solubility of the aniline derivative.
- 2 ⁇ m + n ⁇ 8 is preferably satisfied, 2 ⁇ m + n ⁇ 6 is more preferable, and 2 ⁇ m + n ⁇ 4 is still more preferable.
- Z 11 is preferably a chlorine atom, a bromine atom, an iodine atom, or an aryl group having 6 to 20 carbon atoms which may be substituted with Z 13 , More preferred are a bromine atom, an iodine atom, or a phenyl group which may be substituted with Z 13 , and most preferably it is not present (ie, unsubstituted).
- Z 12 is preferably a chlorine atom, a bromine atom, an iodine atom, or an alkyl group having 1 to 20 carbon atoms that may be substituted with Z 13 , and is substituted with a chlorine atom, a bromine atom, an iodine atom, or Z 13.
- the alkyl group having 1 to 4 carbon atoms which may be present is more preferable, and it is most preferable that the alkyl group is not present (that is, unsubstituted).
- Z 13 is preferably a chlorine atom, a bromine atom or an iodine atom, and optimally not present (ie, unsubstituted).
- the carbon number of the alkyl group, alkenyl group, and alkynyl group is preferably 10 or less, more preferably 6 or less, and even more preferably 4 or less.
- the carbon number of the aryl group and heteroaryl group is preferably 14 or less, more preferably 10 or less, and even more preferably 6 or less.
- the method for synthesizing the aniline derivative is not particularly limited, but Bulletin of Chemical Society of Japan, 67, pp. 1749-1752 (1994), Synthetic Metals, 84, pp. 119-120 (1997), Thin Solid Films, 520 (24), pp. 157 7157-7163 (2012), International Publication No. 2008/032617, International Publication No. 2008/032616, International Publication No. 2008/129947, International Publication No. 2013/084664, etc. The method is mentioned.
- aniline derivative represented by the formula (5) include, but are not limited to, those represented by the following formula.
- DPA represents a diphenylamino group
- Ph represents a phenyl group
- TPA represents a p- (diphenylamino) phenyl group.
- the content of the charge transporting substance in the varnish of the present invention is preferably about 0.1 to 20% by mass in the varnish from the viewpoint of suppressing the precipitation of the charge transporting substance.
- the fluorine atom containing The charge transporting material containing no fluorine atom is preferably about 0.05 to 20 and more preferably about 0.5 to 5 with respect to the charge transporting material 1 made of an oligoaniline derivative.
- Organic solvent As the organic solvent used in preparing the charge transporting varnish of the present invention, a highly soluble solvent capable of dissolving the charge transporting substance and the dopant satisfactorily can be used.
- Examples of such highly soluble solvents include cyclohexanone, N, N-dimethylformamide, N, N-dimethylacetamide, N, N-dimethylisobutyramide, N-methylpyrrolidone, and 1,3-dimethyl-2-imidazo.
- Examples include, but are not limited to, organic solvents such as lysinone. These solvents can be used singly or in combination of two or more, and the amount used can be 5 to 100% by mass in the total solvent used in the varnish.
- charge transporting substance and the dopant are preferably either completely dissolved or uniformly dispersed in the solvent, and more preferably completely dissolved.
- the varnish has a viscosity of 10 to 200 mPa ⁇ s, particularly 35 to 150 mPa ⁇ s at 25 ° C., and a boiling point of 50 to 300 ° C., particularly 150 to 250 ° C. at normal pressure (atmospheric pressure).
- At least one high-viscosity organic solvent can be contained.
- Examples of the high viscosity organic solvent include cyclohexanol, ethylene glycol, ethylene glycol diglycidyl ether, 1,3-octylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol, tripropylene glycol, 1,3-butanediol, Examples include 2,3-butanediol, 1,4-butanediol, propylene glycol, hexylene glycol, and the like, but are not limited thereto.
- the addition ratio of the high-viscosity organic solvent to the entire solvent used in the varnish of the present invention is preferably within a range where no solid is precipitated, and the addition ratio is preferably 5 to 90% by mass as long as no solid is precipitated.
- solvents are used in an amount of 1 to 90% by weight, preferably 1 to 90%, based on the total solvent used in the varnish. It is also possible to mix at a ratio of 50% by mass.
- solvents examples include propylene glycol monomethyl ether, ethylene glycol monobutyl ether, diethylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol dimethyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether
- solvents include, but are not limited to, ether acetate, diethylene glycol monoethyl ether, diacetone alcohol, ⁇ -butyrolactone, ethyl lactate, and n-hexyl acetate. These solvents can be used alone or in combination of two or more.
- the viscosity of the varnish of the present invention is appropriately set according to the thickness of the thin film to be produced and the solid content concentration, but is usually 1 to 50 mPa ⁇ s at 25 ° C.
- the solid content concentration of the charge transporting varnish in the present invention is appropriately set in consideration of the viscosity and surface tension of the varnish, the thickness of the thin film to be produced, etc., but is usually 0.1 to 10.0 mass. In consideration of improving the coatability of the varnish, it is preferably 0.5 to 5.0% by mass, more preferably 1.0 to 3.0% by mass.
- solid content means what remove
- the charge transporting varnish of the present invention may contain a dopant for the purpose of improving its charge transporting ability, depending on the use of the thin film obtained.
- a dopant will not be specifically limited if it melt
- An inorganic type and an organic type dopant may be used individually by 1 type, and may be used in combination of 2 or more type.
- the content thereof is preferably about 0.01 to 20.0, more preferably a molar ratio with respect to the charge transporting material 1 containing no fluorine atom. It is about 0.4 to 5.0.
- Inorganic dopants include inorganic acids such as hydrogen chloride, sulfuric acid, nitric acid and phosphoric acid; aluminum chloride (III) (AlCl 3 ), titanium tetrachloride (IV) (TiCl 4 ), boron tribromide (BBr 3 ), Boron trifluoride ether complex (BF 3 ⁇ OEt 2 ), iron chloride (III) (FeCl 3 ), copper chloride (II) (CuCl 2 ), antimony pentachloride (V) (SbCl 5 ), antimony pentafluoride ( Metal halides such as V) (SbF 5 ), arsenic pentafluoride (V) (AsF 5 ), phosphorus pentafluoride (PF 5 ), tris (4-bromophenyl) aluminum hexachloroantimonate (TBPAH); Cl 2 , Br 2 , I 2 , ICl, ICl 3 , IBr,
- organic dopants include benzenesulfonic acid, tosylic acid, p-styrenesulfonic acid, 2-naphthalenesulfonic acid, 4-hydroxybenzenesulfonic acid, 5-sulfosalicylic acid, p-dodecylbenzenesulfonic acid, dihexylbenzenesulfonic acid, 2 , 5-dihexylbenzenesulfonic acid, dibutylnaphthalenesulfonic acid, 6,7-dibutyl-2-naphthalenesulfonic acid, dodecylnaphthalenesulfonic acid, 3-dodecyl-2-naphthalenesulfonic acid, hexylnaphthalenesulfonic acid, 4-hexyl-1 -Naphthalenesulfonic acid, octylnaphthalenesulfonic acid, 2-octyl-1-na
- arylsulfonic acid compound represented by following formula (6) or (7) can also be used suitably as a dopant.
- a 1 represents —O— or —S—, preferably —O—.
- a 2 represents a naphthalene ring or an anthracene ring, and a naphthalene ring is preferable.
- a 3 represents a divalent to tetravalent perfluorobiphenyl group, j 1 represents the number of bonds between A 1 and A 3, is an integer satisfying 2 ⁇ j 1 ⁇ 4, A 3 is a divalent It is preferable that j 1 is 2.
- j 2 represents the number of sulfonic acid groups bonded to A 2 , and is an integer satisfying 1 ⁇ j 2 ⁇ 4, but 2 is preferable.
- a 4 to A 8 each independently represents a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 20 carbon atoms, a halogenated alkyl group having 1 to 20 carbon atoms, or 2 to 20 represents an alkenyl halide group, and at least three of A 4 to A 8 are halogen atoms.
- i represents the number of sulfonic acid groups bonded to the naphthalene ring, and is an integer satisfying 1 ⁇ i ⁇ 4, preferably 2 to 4, and more preferably 2.
- Examples of the halogenated alkyl group having 1 to 20 carbon atoms include trifluoromethyl group, 2,2,2-trifluoroethyl group, perfluoroethyl group, 3,3,3-trifluoropropyl group, 2,2,3. , 3,3-pentafluoropropyl group, perfluoropropyl group, 4,4,4-trifluorobutyl group, 3,3,4,4,4-pentafluorobutyl group, 2,2,3,3,4 1,4,4-heptafluorobutyl group, perfluorobutyl group and the like.
- Examples of the halogenated alkenyl group having 2 to 20 carbon atoms include perfluorovinyl group, 1-perfluoropropenyl group, perfluoroallyl group, perfluorobutenyl group and the like.
- halogen atom and the alkyl group having 1 to 20 carbon atoms include the same ones as described above, but the halogen atom is preferably a fluorine atom.
- a 4 to A 8 are a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 10 carbon atoms, a halogenated alkyl group having 1 to 10 carbon atoms, or a halogenated alkenyl group having 2 to 10 carbon atoms.
- at least three of A 4 to A 8 are preferably fluorine atoms, hydrogen atom, fluorine atom, cyano group, alkyl group having 1 to 5 carbon atoms, fluorinated alkyl having 1 to 5 carbon atoms.
- a alkenyl fluoride group having 2 to 5 carbon atoms, and at least three of A 4 to A 8 are more preferably fluorine atoms, a hydrogen atom, a fluorine atom, a cyano group, and 1 to 5 carbon atoms. More preferably, the perfluoroalkyl group or the perfluoroalkenyl group having 1 to 5 carbon atoms, and A 4 , A 5 and A 8 are fluorine atoms.
- the perfluoroalkyl group is a group in which all hydrogen atoms of the alkyl group are substituted with fluorine atoms
- the perfluoroalkenyl group is a group in which all hydrogen atoms of the alkenyl group are substituted with fluorine atoms.
- an aryl sulfonic acid compound represented by the following formula (8) can also be suitably used as a dopant.
- Ar is a group represented by the formula (9) or (10). (Wherein p represents an integer of 1 to 5 and q represents an integer of 1 to 7)]
- the arylsulfonic acid compound represented by the formula (8) is represented by the formula (8 ′) by reacting the amine compound represented by the formula (11) with the acid halide represented by the formula (12). An aryl sulfonate can be obtained, and this salt can be obtained by ion-exchange treatment.
- Ar ′ represents a group represented by the formula (9 ′) or (10 ′).
- M represents an alkali metal atom such as sodium or potassium.
- Examples of the amine compound represented by the formula (11) include disodium aniline-2,4-disulfonate, disodium aniline-2,5-disulfonate, disodium 8-amino-naphthalene-1,5-disulfonate, 2-amino-naphthalene-1,5-disulfonic acid disodium salt, 2-amino-naphthalene-3,6-disulfonic acid disodium salt, 7-aminonaphthalene-1,5-disulfonic acid disodium salt, 7-aminonaphthalene-2 , 4-disulfonic acid disodium, 7-aminonaphthalene-1,3-disulfonic acid disodium, and the like, but are not limited thereto.
- a hydrate may be used for the amine compound represented by the formula (11).
- Examples of the acid halide represented by the formula (12) include benzoyl chloride and benzoyl bromide.
- the reaction solvent is preferably an aprotic polar organic solvent, for example, N, N-dimethylformamide, N, N-dimethylacetamide, N-methylpyrrolidone, 1,3-dimethyl-2-imidazolidinone, dimethyl sulfoxide, tetrahydrofuran And dioxane.
- N, N-dimethylformamide, N, N-dimethylacetamide, tetrahydrofuran, dioxane and the like are preferable.
- the reaction temperature is usually from ⁇ 50 ° C. to the boiling point of the solvent used, but is preferably in the range of 0 to 140 ° C.
- the reaction time is usually 0.1 to 100 hours.
- the aryl sulfonate represented by the formula (8 ′) is recovered by filtration, evaporation of the reaction solvent, etc., and then, for example, by protonating the sulfonate with a cation exchange resin, the formula ( The aryl sulfonic acid compound represented by 8) can be produced.
- the acid halide represented by the formula (12) reacts benzoic acid with an electrophilic halogenating agent such as thionyl chloride, oxalyl chloride, phosphoryl chloride, sulfuryl chloride, phosphorus trichloride, or phosphorus pentachloride. Can be obtained.
- an electrophilic halogenating agent such as thionyl chloride, oxalyl chloride, phosphoryl chloride, sulfuryl chloride, phosphorus trichloride, or phosphorus pentachloride.
- Suitable dopants include, but are not limited to, phosphomolybdic acid, phosphotungstic acid, and those shown below.
- the charge transporting varnish of the present invention may contain other known charge transporting materials as long as the effects of the present invention are not impaired.
- the method for preparing the charge transporting varnish is not particularly limited.
- a method of dissolving the oligoaniline derivative of the present invention in a highly soluble solvent and adding a high viscosity organic solvent thereto, a highly soluble solvent and a high viscosity A method of mixing an organic solvent and dissolving the oligoaniline derivative of the present invention therein can be mentioned.
- the charge transporting varnish is obtained by dissolving a charge transporting substance, a dopant and the like in an organic solvent, and then using a sub-micron order filter or the like. It is desirable to filter.
- a charge transporting thin film can be formed on a base material by applying the charge transporting varnish of the present invention on the base material and baking it.
- Examples of the varnish coating method include, but are not limited to, a dip method, a spin coating method, a transfer printing method, a roll coating method, a brush coating method, an ink jet method, a spray method, and a slit coating method. It is preferable to adjust the viscosity and surface tension of the varnish depending on the coating method.
- the firing atmosphere is not particularly limited, and a thin film having a uniform film formation surface and charge transportability can be obtained not only in the air atmosphere but also in an inert gas such as nitrogen or in a vacuum.
- an air atmosphere is preferable.
- the firing temperature is appropriately set within a range of about 100 to 260 ° C. in consideration of the intended use of the obtained thin film, the degree of charge transportability imparted to the obtained thin film, and the like.
- it is preferably about 140 to 250 ° C, more preferably about 145 to 240 ° C.
- the firing time varies depending on the firing temperature and thus cannot be specified unconditionally, but is usually about 1 minute to 1 hour.
- two or more steps of temperature change may be applied for the purpose of developing a higher uniform film forming property or causing the reaction to proceed on the substrate.
- the heating may be performed using an appropriate device such as a hot plate or an oven.
- the thickness of the charge transporting thin film is not particularly limited, but is preferably 5 to 200 nm when used as a hole injection layer in an organic EL device.
- a method of changing the film thickness there are methods such as changing the solid content concentration in the varnish and changing the amount of the solution on the substrate during coating.
- the charge transporting thin film of the present invention can be suitably used as a hole injection layer in an organic EL device, but can also be used as a charge transporting functional layer such as a hole injection transport layer.
- Organic EL device has a pair of electrodes, and has the above-described charge transporting thin film of the present invention between these electrodes.
- Typical configurations of the organic EL element include (a) to (f) below, but are not limited thereto.
- an electron blocking layer or the like can be provided between the light emitting layer and the anode
- a hole (hole) blocking layer or the like can be provided between the light emitting layer and the cathode.
- the hole injection layer, the hole transport layer, or the hole injection transport layer may have a function as an electron block layer or the like
- the electron injection layer, the electron transport layer, or the electron injection transport layer is a hole. It may have a function as a block layer or the like.
- A Anode / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode
- b Anode / hole injection layer / hole transport layer / light emission layer / electron injection transport layer / Cathode
- c anode / hole injection transport layer / light emitting layer / electron transport layer / electron injection layer / cathode
- d anode / hole injection transport layer / light emitting layer / electron injection transport layer / cathode
- e anode / positive Hole injection layer / hole transport layer / light emitting layer / cathode
- f anode / hole injection transport layer / light emitting layer / cathode
- “Hole injection layer”, “hole transport layer” and “hole injection transport layer” are layers formed between a light emitting layer and an anode, and transport holes from the anode to the light emitting layer. It has a function. When only one layer of a hole transporting material is provided between the light emitting layer and the anode, it is a “hole injection transporting layer”, and a layer of the hole transporting material is provided between the light emitting layer and the anode. When two or more layers are provided, the layer close to the anode is a “hole injection layer”, and the other layers are “hole transport layers”. In particular, for the hole injection layer and the hole injection transport layer, a thin film that is excellent not only in accepting holes from the anode but also injecting holes into the hole transport layer and the light emitting layer is used.
- Electrode “Electron injection layer”, “electron transport layer” and “electron injection transport layer” are layers formed between a light emitting layer and a cathode, and have a function of transporting electrons from the cathode to the light emitting layer. It is. When only one layer of the electron transporting material is provided between the light emitting layer and the cathode, it is an “electron injecting and transporting layer”, and two layers of the electron transporting material are provided between the light emitting layer and the cathode. When provided as described above, the layer close to the cathode is an “electron injection layer”, and the other layers are “electron transport layers”.
- the “light emitting layer” is an organic layer having a light emitting function, and includes a host material and a dopant material when a doping system is employed.
- the host material mainly has a function of encouraging recombination of electrons and holes and confining excitons in the light emitting layer, and the dopant material efficiently emits excitons obtained by recombination. It has a function.
- the host material mainly has a function of confining excitons generated by the dopant in the light emitting layer.
- Examples of materials used and methods for producing an organic EL device using the charge transporting varnish of the present invention include the following, but are not limited thereto.
- the electrode substrate to be used is preferably cleaned in advance by cleaning with a liquid such as a detergent, alcohol, or pure water.
- a liquid such as a detergent, alcohol, or pure water.
- the anode substrate is subjected to surface treatment such as UV ozone treatment or oxygen-plasma treatment immediately before use. It is preferable.
- the surface treatment may not be performed.
- An example of the method for producing the organic EL device of the present invention when the thin film obtained from the charge transporting varnish of the present invention is a hole injection layer is as follows.
- the charge transporting varnish of the present invention is applied on the anode substrate and baked to form a hole injection layer on the electrode.
- a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a cathode are provided in this order.
- the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer may be formed by either a vapor deposition method or a coating method (wet process) depending on the characteristics of the material used.
- anode material examples include transparent electrodes typified by indium tin oxide (ITO) and indium zinc oxide (IZO), metal anodes typified by aluminum, alloys thereof, and the like. What performed the chemical conversion process is preferable. Polythiophene derivatives and polyaniline derivatives having high charge transporting properties can also be used.
- metals constituting the metal anode include scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, yttrium, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, cadmium.
- Materials for forming the hole transport layer include (triphenylamine) dimer derivatives, [(triphenylamine) dimer] spirodimers, N, N′-bis (naphthalen-1-yl) -N, N′-bis (Phenyl) -benzidine ( ⁇ -NPD), N, N′-bis (naphthalen-2-yl) -N, N′-bis (phenyl) -benzidine, N, N′-bis (3-methylphenyl)- N, N′-bis (phenyl) -benzidine, N, N′-bis (3-methylphenyl) -N, N′-bis (phenyl) -9,9-spirobifluorene, N, N′-bis ( Naphthalen-1-yl) -N, N′-bis (phenyl) -9,9-spirobifluorene, N, N′-bis (3-methylphenyl) -N, N′-bis (phenyl) -9,9-s
- Materials for forming the light emitting layer include tris (8-quinolinolato) aluminum (III) (Alq 3 ), bis (8-quinolinolato) zinc (II) (Znq 2 ), bis (2-methyl-8-quinolinolato)- 4- (p-phenylphenolate) aluminum (III) (BAlq), 4,4′-bis (2,2-diphenylvinyl) biphenyl, 9,10-di (naphthalen-2-yl) anthracene, 2-t -Butyl-9,10-di (naphthalen-2-yl) anthracene, 2,7-bis [9,9-di (4-methylphenyl) -fluoren-2-yl] -9,9-di (4- Methylphenyl) fluorene, 2-methyl-9,10-bis (naphthalen-2-yl) anthracene, 2- (9,9-spirobifluoren-2-yl) -9,9-spir
- Materials for forming the electron injection layer include lithium oxide (Li 2 O), magnesium oxide (MgO), alumina (Al 2 O 3 ), lithium fluoride (LiF), sodium fluoride (NaF), magnesium fluoride ( MgF 2 ), cesium fluoride (CsF), strontium fluoride (SrF 2 ), molybdenum trioxide (MoO 3 ), aluminum, lithium acetylacetonate (Li (acac)), lithium acetate, lithium benzoate, etc. .
- cathode material examples include aluminum, magnesium-silver alloy, aluminum-lithium alloy, lithium, sodium, potassium, cesium and the like.
- the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer are formed by sequentially forming the hole transport layer and the light emitting layer, instead of performing the vacuum deposition operation.
- An organic EL device having a charge transporting thin film formed of a transporting varnish can be produced.
- the charge transporting varnish of the present invention is applied onto the anode substrate, a hole injection layer is prepared by the above-described method, a hole transport layer and a light emitting layer are sequentially formed thereon, and further a cathode material Is evaporated to obtain an organic EL element.
- the same materials as described above can be used, and the same cleaning treatment and surface treatment can be performed.
- a hole transporting polymer material or a light emitting polymer material, or a material obtained by adding a dopant to these materials is dissolved or uniformly dispersed.
- coating on a positive hole injection layer or a positive hole transport layer is mentioned.
- Examples of the light-emitting polymer material include polyfluorene derivatives such as poly (9,9-dialkylfluorene) (PDAF), poly (2-methoxy-5- (2′-ethylhexoxy) -1,4-phenylenevinylene) (MEH). -PPV) and the like, polythiophene derivatives such as poly (3-alkylthiophene) (PAT), polyvinylcarbazole (PVCz) and the like.
- PDAF poly (9,9-dialkylfluorene)
- MEH 2-methoxy-5- (2′-ethylhexoxy) -1,4-phenylenevinylene
- PVT polythiophene derivatives
- PVCz polyvinylcarbazole
- Examples of the solvent include toluene, xylene, chloroform and the like.
- Examples of the dissolution or uniform dispersion method include methods such as stirring, heating and stirring, and ultrasonic dispersion.
- the coating method is not particularly limited, and examples thereof include an inkjet method, a spray method, a dip method, a spin coating method, a transfer printing method, a roll coating method, and a brush coating.
- the application is preferably performed under an inert gas such as nitrogen or argon.
- the firing method a method of heating with an oven or a hot plate under an inert gas or in a vacuum can be mentioned.
- An example of the method for producing the organic EL device of the present invention when the thin film obtained from the charge transporting varnish of the present invention is a hole injection transport layer is as follows.
- a hole injection transport layer is formed on the anode substrate, and a light emitting layer, an electron transport layer, an electron injection layer, and a cathode are provided in this order on the hole injection transport layer.
- Examples of the formation method and specific examples of the light emitting layer, the electron transport layer, and the electron injection layer include the same ones as described above.
- Examples of the anode material, the light emitting layer, the light emitting dopant, the material for forming the electron transport layer and the electron block layer, and the cathode material include the same materials as described above.
- a hole block layer, an electron block layer, or the like may be provided between the electrode and any of the layers as necessary.
- a material for forming the electron blocking layer tris (phenylpyrazole) iridium and the like can be given.
- the materials constituting the anode and the cathode and the layer formed between them differ depending on whether a device having a bottom emission structure or a top emission structure is manufactured. Therefore, the material is appropriately selected in consideration of this point. .
- a transparent anode is used on the substrate side, and light is extracted from the substrate side
- a reflective anode made of metal is used in the opposite direction to the substrate.
- Light is extracted from a certain transparent electrode (cathode) side. Therefore, for example, regarding the anode material, a transparent anode such as ITO is used when manufacturing an element having a bottom emission structure, and a reflective anode such as Al / Nd is used when manufacturing an element having a top emission structure.
- the organic EL device of the present invention may be sealed together with a water catching agent or the like according to a standard method in order to prevent deterioration of characteristics.
- the flask was charged with 3.0 g of tetraaniline, 1.91 g of 2,3,4,5-tetrafluorobenzoyl chloride and 60 g of N, N-dimethylacetamide, and the atmosphere in the flask was replaced with nitrogen. Stir. After completion of the stirring, 30 mL of a 5 mol / L sodium hydroxide aqueous solution was added and further stirred for 30 minutes. Ethyl acetate and saturated brine were mixed into the reaction solution and subjected to liquid separation treatment until the pH reached 7 (3 times). The obtained organic layer was dried over sodium sulfate, and then concentrated under reduced pressure. To this concentrated solution, 15 mL of THF was added.
- the reaction solution was cooled to room temperature, filtered, and 20 mL of N, N-dimethylformamide was added to the filtrate to prepare a solution.
- the solution was dropped into ion-exchanged water and stirred at room temperature.
- the suspension was filtered, and the obtained filtrate was dried.
- the dried solid was recrystallized using 1,4-dioxane to obtain the desired oligoaniline derivative B (yield 0.49 g).
- Phenyltetraaniline was synthesized according to the method described in Bulletin of Chemical Society of Japan, 1994, 67, pp. 1749-1752.
- Aryl sulfonic acid A was synthesized according to International Publication No. 2006/025342.
- Example 1-2 Preparation of charge transporting varnish B 0.083 g of oligoaniline derivative A synthesized in Synthesis Example 1, 0.139 g of aniline derivative X synthesized in Synthesis Example 6 and phosphotungstic acid (manufactured by Kanto Chemical Co., Inc.) 0.694 g was dissolved in a mixed solvent of 6.7 g of DMI, 10 g of CHA, and 3.3 g of PG under a nitrogen atmosphere to prepare a charge transporting varnish B.
- Example 1-3 Preparation of charge transporting varnish C 0.051 g of the oligoaniline derivative A synthesized in Synthesis Example 1, 0.129 g of the aniline derivative X synthesized in Synthesis Example 6 and 0.383 g of aryl sulfonic acid A in a nitrogen atmosphere was dissolved in a mixed solvent of DMI 6.7 g, CHA 10 g and PG 3.3 g to prepare a charge transporting varnish C.
- ITO substrate a glass substrate of 25 mm ⁇ 25 mm ⁇ 0.7 t on which ITO was patterned with a film thickness of 150 nm was used.
- O 2 plasma cleaning apparatus 150 W, 30 seconds from which impurities on the surface were removed was used.
- Example 2-1 Fabrication and characteristic evaluation of single layer device (SLD) [Example 2-1]
- the varnish obtained in Example 1-1 was applied to an ITO substrate using a spin coater, and then pre-baked at 80 ° C. for 1 minute in the atmosphere, followed by main baking at 230 ° C. for 15 minutes.
- a 40 nm thin film was formed on the substrate.
- an aluminum thin film was formed using a vapor deposition device (degree of vacuum: 4.0 ⁇ 10 ⁇ 5 Pa) to obtain a single layer element. Vapor deposition was performed at a deposition rate of 0.2 nm / second.
- the film thickness of the aluminum thin film was 100 nm.
- the characteristic was evaluated. Sealing was performed according to the following procedure. In a nitrogen atmosphere with an oxygen concentration of 2 ppm or less and a dew point of -85 ° C or less, the SLD is placed between the sealing substrates, and the sealing substrate is bonded with an adhesive (MORESCO's Mores Moisture Cut WB90US (P)). It was. At this time, a water trapping agent (HD-071010W-40 manufactured by Dynic Co., Ltd.) was placed in the sealing substrate together with the SLD. The bonded sealing substrate was irradiated with UV light (wavelength 365 nm, irradiation amount 6,000 mJ / cm 2 ), and then annealed at 80 ° C. for 1 hour to cure the adhesive.
- UV light wavelength 365 nm, irradiation amount 6,000 mJ / cm 2
- Example 2-2 to 2-6 An SLD was produced in the same manner as in Example 2-1, except that the varnish obtained in Examples 1-2 to 1-6 was used instead of the varnish obtained in Example 1-1.
- Example 1 A polyethylene dioxythiophene-polystyrene sulfonic acid aqueous solution (AI4083, manufactured by HC Starck) was used in place of the varnish obtained in Example 1-1, except that it was baked at 230 ° C. for 15 minutes and baked at 150 ° C. for 30 minutes. An SLD was produced in the same manner as in Example 2-1.
- Example 3-1 Fabrication and characteristic evaluation of hole-only device (HOD)
- the varnish obtained in Example 1-1 was applied to an ITO substrate using a spin coater, and then pre-baked at 80 ° C. for 1 minute in the atmosphere, followed by main baking at 230 ° C. for 15 minutes.
- a 40 nm thin film (hole injection layer) was formed on the substrate.
- ⁇ -NPD and an aluminum thin film were sequentially laminated using a vapor deposition apparatus (vacuum degree 2.0 ⁇ 10 ⁇ 5 Pa) to obtain a hole-only device. Vapor deposition was performed at a deposition rate of 0.2 nm / second.
- the film thicknesses of the ⁇ -NPD and aluminum thin films were 20 nm and 100 nm, respectively.
- the characteristic was evaluated. Sealing was performed in the same manner as described above.
- Examples 3-2 to 3-6 A HOD was produced in the same manner as in Example 3-1, except that the varnish obtained in Examples 1-2 to 1-6 was used instead of the varnish obtained in Example 1-1.
- Example 2 A polyethylene dioxythiophene-polystyrene sulfonic acid aqueous solution (AI4083, manufactured by HC Starck) was used in place of the varnish obtained in Example 1-1, except that it was baked at 230 ° C. for 15 minutes and baked at 150 ° C. for 30 minutes. A HOD was produced in the same manner as in Example 3-1.
- the current density at a driving voltage of 3 V was measured for each SLD and HOD produced in the examples and comparative examples. The results are shown in Table 4. The relative intensity of the HOD current density with respect to the SLD current density is also shown at the same voltage. Note that the high relative strength indicates that hole supply to the hole transport layer is efficiently realized.
- Example 4-1 Preparation and characteristic evaluation of organic EL element-1
- the varnish obtained in Example 1-1 was applied to an ITO substrate using a spin coater, then dried at 80 ° C. for 1 minute, and further baked at 230 ° C. for 15 minutes in an air atmosphere. A uniform thin film (hole injection layer) of 40 nm was formed. On top of this, ⁇ -NPD 20 nm was laminated using a vapor deposition device (vacuum degree 2.0 ⁇ 10 ⁇ 5 Pa). The deposition rate at this time was 0.2 nm / second. Next, CBP and Ir (ppy) 3 were co-evaporated.
- the deposition rate was controlled so that the concentration of Ir (ppy) 3 was 6%, and the layers were laminated to 40 nm.
- an organic EL element was obtained by sequentially laminating thin films of BAlq, lithium fluoride, and aluminum.
- the deposition rate was set to 0.2 nm / second for BAlq and aluminum, and 0.02 nm / second for lithium fluoride.
- the thicknesses of the BAlq, lithium fluoride, and aluminum thin films were 20 nm, 0.5 nm, and 100 nm, respectively.
- the characteristic was evaluated. Sealing was performed in the same manner as described above.
- Examples 4-2 to 4-4 An organic EL device was produced in the same manner as in Example 4-1, except that the varnish obtained in Examples 1-2 to 1-4 was used instead of the varnish obtained in Example 1-1.
- Example 3 A polyethylene dioxythiophene-polystyrene sulfonic acid aqueous solution (AI4083, manufactured by HC Starck) was used in place of the varnish obtained in Example 1-1, except that it was baked at 230 ° C. for 15 minutes and baked at 150 ° C. for 30 minutes. An organic EL device was produced in the same manner as in Example 4-1.
- Example 5-1 Fabrication and characteristic evaluation of organic EL element-2
- the varnish obtained in Example 1-3 was applied to an ITO substrate using a spin coater, then dried at 80 ° C. for 1 minute, and further baked at 230 ° C. for 15 minutes in an air atmosphere. A uniform thin film (hole injection layer) of 40 nm was formed.
- the deposition rate was controlled so that the concentration of Ir (ppy) 3 was 6%, and the layers were laminated to 40 nm.
- an organic EL element was obtained by sequentially laminating thin films of BAlq, lithium fluoride, and aluminum.
- the deposition rate was set to 0.2 nm / second for BAlq and aluminum, and 0.02 nm / second for lithium fluoride.
- the thicknesses of the BAlq, lithium fluoride, and aluminum thin films were 20 nm, 0.5 nm, and 100 nm, respectively.
- the characteristic was evaluated. Sealing was performed in the same manner as described above.
- Examples 5-2 to 5-3 An organic EL device was produced in the same manner as in Example 5-1, except that the varnish obtained in Examples 1-5 and 1-6 was used instead of the varnish obtained in Example 1-3.
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Abstract
Description
1.下記式(1)で表されるフッ素原子含有オリゴアニリン誘導体からなる電荷輸送性物質、フッ素原子を含有しない電荷輸送性物質、及び有機溶媒を含むことを特徴とする電荷輸送性ワニス。
R2~R10は、それぞれ独立に、水素原子、ハロゲン原子、ニトロ基、シアノ基、又はハロゲン原子で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表し;
Aは、
シアノ基、塩素原子、臭素原子、ヨウ素原子、ニトロ基若しくは炭素数1~20のフルオロアルコキシ基で置換されていてもよい、炭素数1~20のフルオロアルキル基、炭素数3~20のフルオロシクロアルキル基、炭素数4~20のフルオロビシクロアルキル基、炭素数2~20のフルオロアルケニル基若しくは炭素数2~20のフルオロアルキニル基、
シアノ基、塩素原子、臭素原子、ヨウ素原子、ニトロ基、炭素数1~20のアルキル基、炭素数1~20のフルオロアルキル基若しくは炭素数1~20のフルオロアルコキシ基で置換されていてもよい、炭素数6~20のフルオロアリール基、
炭素数1~20のフルオロアルキル基、炭素数3~20のフルオロシクロアルキル基、炭素数4~20のフルオロビシクロアルキル基、炭素数2~20のフルオロアルケニル基若しくは炭素数2~20のフルオロアルキニル基で置換されるとともに、シアノ基、ハロゲン原子若しくは炭素数1~20のフルオロアルコキシ基で置換されていてもよい、炭素数6~20のアリール基、
シアノ基、塩素原子、臭素原子、ヨウ素原子、ニトロ基、炭素数1~20のフルオロアルコキシ基、炭素数1~20のフルオロアルキル基、炭素数3~20のフルオロシクロアルキル基、炭素数4~20のフルオロビシクロアルキル基、炭素数2~20のフルオロアルケニル基若しくは炭素数2~20のフルオロアルキニル基で置換されていてもよい、炭素数7~20のフルオロアラルキル基、又は
炭素数1~20のフルオロアルキル基、炭素数3~20のフルオロシクロアルキル基、炭素数4~20のフルオロビシクロアルキル基、炭素数2~20のフルオロアルケニル基若しくは炭素数2~20のフルオロアルキニル基で置換されるとともに、シアノ基、ハロゲン原子若しくは炭素数1~20のフルオロアルコキシ基で置換されていてもよい、炭素数7~20のアラルキル基
を表し;
kは、1~20の整数を表す。)
2.Aが、シアノ基、塩素原子、臭素原子、ヨウ素原子、ニトロ基若しくは炭素数1~20のフルオロアルコキシ基で置換されていてもよい、炭素数1~20のフルオロアルキル基、シアノ基、塩素原子、臭素原子、ヨウ素原子、ニトロ基、炭素数1~20のアルキル基、炭素数1~20のフルオロアルキル基若しくは炭素数1~20のフルオロアルコキシ基で置換されていてもよい、炭素数6~20のフルオロアリール基、又は炭素数1~20のフルオロアルキル基、炭素数3~20のフルオロシクロアルキル基、炭素数4~20のフルオロビシクロアルキル基、炭素数2~20のフルオロアルケニル基若しくは炭素数2~20のフルオロアルキニル基で置換されるとともに、シアノ基、ハロゲン原子若しくは炭素数1~20のフルオロアルコキシ基で置換されていてもよい、炭素数6~20のアリール基である1の電荷輸送性ワニス。
3.Aが、シアノ基、塩素原子、臭素原子、ヨウ素原子、ニトロ基、炭素数1~20のアルキル基、炭素数1~20のフルオロアルキル基若しくは炭素数1~20のフルオロアルコキシ基で置換されていてもよい、3以上のフッ素原子で置換されたフェニル基、又は炭素数3~20のフルオロシクロアルキル基、炭素数4~20のフルオロビシクロアルキル基、炭素数2~20のフルオロアルケニル基若しくは炭素数2~20のフルオロアルキニル基で置換されるとともに、シアノ基、ハロゲン原子若しくは炭素数1~20のフルオロアルコキシ基で置換されていてもよい、フェニル基である2の電荷輸送性ワニス。
4.R1が、水素原子である1~3のいずれかの電荷輸送性ワニス。
5.R2~R10が、水素原子である1~4のいずれかの電荷輸送性ワニス。
6.kが、2~10の整数である1~5のいずれかの電荷輸送性ワニス。
7.前記フッ素原子を含有しない電荷輸送性物質が、下記式(4)で表されるものである1~6のいずれかの電荷輸送性ワニス。
Y1は、それぞれ独立に、水素原子、Z11で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基若しくは炭素数2~20のアルキニル基、又はZ12で置換されていてもよい、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表し;
R17及びR18は、それぞれ独立に、水素原子、ハロゲン原子、ニトロ基、シアノ基、アミノ基、アルデヒド基、ヒドロキシ基、チオール基、スルホン酸基、カルボキシル基、Z11で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基若しくは炭素数2~20のアルキニル基、Z12で置換されていてもよい、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基、又は-NHY2、-NY3Y4、-C(O)Y5、-OY6、-SY7、-SO3Y8、-C(O)OY9、-OC(O)Y10、-C(O)NHY11若しくは-C(O)NY12Y13基を表し;
R11~R16は、それぞれ独立に、水素原子、ハロゲン原子、ニトロ基、シアノ基、アミノ基、アルデヒド基、ヒドロキシ基、チオール基、スルホン酸基、カルボキシル基、Z11で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基若しくは炭素数2~20のアルキニル基、Z12で置換されていてもよい、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基、又は-NHY2、-NY3Y4、-C(O)Y5、-OY6、-SY7、-SO3Y8、-C(O)OY9、-OC(O)Y10、-C(O)NHY11若しくは-C(O)NY12Y13を表し;
Y2~Y13は、それぞれ独立に、Z11で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基若しくは炭素数2~20のアルキニル基、又はZ12で置換されていてもよい、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表し;
Z11は、ハロゲン原子、ニトロ基、シアノ基、アミノ基、アルデヒド基、ヒドロキシ基、チオール基、スルホン酸基、カルボキシル基、又はZ13で置換されていてもよい、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表し;
Z12は、ハロゲン原子、ニトロ基、シアノ基、アミノ基、アルデヒド基、ヒドロキシ基、チオール基、スルホン酸基、カルボキシル基、又はZ13で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基若しくは炭素数2~20のアルキニル基を表し;
Z13は、ハロゲン原子、ニトロ基、シアノ基、アミノ基、アルデヒド基、ヒドロキシ基、チオール基、スルホン酸基、又はカルボキシル基を表し;
m及びnは、それぞれ独立に、0以上の整数を表し、1≦m+n≦20を満たす。)
8.更にドーパントを含む1~7のいずれかの電荷輸送性ワニス。
9.1~8のいずれかの電荷輸送性ワニスを用いて作製される電荷輸送性薄膜。
10.9の電荷輸送性薄膜を有する有機EL素子。
11.式(2B)で表されるアミン化合物と、式(3B)又は(3B')で表されるフッ素原子含有化合物とを、塩基の存在下で、反応させることを特徴とする、下記式(1)で表されるフッ素原子含有オリゴアニリン誘導体の製造方法。
本発明の電荷輸送性ワニスは、下記式(1)で表されるフッ素原子含有オリゴアニリン誘導体からなる電荷輸送性物質を含む。なお、電荷輸送性とは、導電性と同義であり、正孔輸送性とも同義である。また、本発明の電荷輸送性ワニスは、それ自体に電荷輸送性があるものでもよく、ワニスを使用して得られる固体膜に電荷輸送性があるものでもよい。
前記フッ素原子含有オリゴアニリン誘導体は、下記スキームAで表されるように、式(2A)で表されるアミン化合物と式(3A)で表されるフッ素原子含有酸ハロゲン化物とを反応させることで合成することができる。この際、反応をより効率的に進行させることを目的に、好ましくは塩基の存在下で反応を行う。
本発明の電荷輸送性ワニスは、フッ素原子を含有しない電荷輸送性物質を含む。フッ素原子を含有しない電荷輸送性物質としては、アニリン誘導体、チオフェン誘導体、ピロール誘導体等の電荷輸送性オリゴマーが挙げられる。前記電荷輸送性オリゴマーの分子量は、通常200~5,000であるが、電荷輸送性の高い薄膜を与えるワニスを調製する観点から、好ましくは300以上、より好ましくは400以上、より一層好ましくは500以上であり、平坦性の高い薄膜を与える均一なワニスを調製する観点から、好ましくは4,000以下であり、より好ましくは3,000以下であり、より一層好ましくは2,000以下である。
本発明の電荷輸送性ワニスを調製する際に用いられる有機溶媒としては、電荷輸送性物質及びドーパントを良好に溶解し得る高溶解性溶媒を用いることができる。
本発明の電荷輸送性ワニスは、得られる薄膜の用途に応じ、その電荷輸送能の向上等を目的としてドーパントを含んでもよい。ドーパントは、ワニスに使用する少なくとも1種の溶媒に溶解するものであれば特に限定されず、無機系ドーパント、有機系ドーパントのいずれも使用できる。無機系及び有機系のドーパントは、1種単独で用いてもよく、2種以上組み合わせて用いてもよい。
本発明の電荷輸送性ワニスを基材上に塗布して焼成することで、基材上に電荷輸送性薄膜を形成させることができる。
本発明の有機EL素子は、一対の電極を有し、これら電極の間に、前述の本発明の電荷輸送性薄膜を有するものである。
(a)陽極/正孔注入層/正孔輸送層/発光層/電子輸送層/電子注入層/陰極
(b)陽極/正孔注入層/正孔輸送層/発光層/電子注入輸送層/陰極
(c)陽極/正孔注入輸送層/発光層/電子輸送層/電子注入層/陰極
(d)陽極/正孔注入輸送層/発光層/電子注入輸送層/陰極
(e)陽極/正孔注入層/正孔輸送層/発光層/陰極
(f)陽極/正孔注入輸送層/発光層/陰極
(1)1H-NMR測定:日本電子(株)製、JNM-ECP300 FT NMR SYSTEM
(2)基板洗浄:長州産業(株)製、基板洗浄装置(減圧プラズマ方式)
(3)ワニスの塗布:ミカサ(株)製、スピンコーターMS-A100
(4)膜厚測定:(株)小坂研究所製、微細形状測定機サーフコーダET-4000
(5)EL素子の作製:長州産業(株)製、多機能蒸着装置システムC-E2L1G1-N
(6)EL素子の輝度等の測定:(有)テック・ワールド製、I-V-L測定システム
(7)EL素子の寿命測定:(株)イーエッチシー製、有機EL輝度寿命評価システムPEL-105S
攪拌終了後、5mol/L水酸化ナトリウム水溶液を30mL加え、更に30分攪拌した。反応液に酢酸エチル及び飽和食塩水を混合してpHが7になるまで分液処理を行った(3回)。得られた有機層を硫酸ナトリウムで乾燥し、次いで、減圧濃縮をおこなった。この濃縮液に、THF15mLを加えた。この溶液をイソプロピルアルコール210mLに滴下し、得られたスラリーを室温で30分間攪拌した。
最後に、スラリー溶液をろ過し、得られたろ物を乾燥して、目的とするオリゴアニリン誘導体Aを得た(収量2.94g)。1H-NMR測定の結果を以下に示す。
1H-NMR (400MHz, DMSO-d6) δ[ppm]: 10.35(s, 1H), 7.83(s, 1H), 7.79-7.68(m, 3H), 7.49(d, J=8.0Hz, 2H), 7.15(t, J=8.0Hz, 2H), 7.01-6.90(m, 12H), 6.68(t, J=8.0Hz, 1H)
次いで、フラスコ内に、N1-フェニルベンゼン-1,4-ジアミン0.63g、2,3,4,5-テトラフルオロ-N-(4-ヨードフェニル)ベンズアミド1.51g、Pd(dba)2 80mg及びt-BuONa1.67gを入れた後、窒素置換を行い、トルエン20mL及び別途予め調製したフェニル-ジ(t-ブチル)ホスフィンのトルエン溶液(濃度:75g/L)0.82mLを加え、50℃で3.5時間攪拌した。反応液を室温まで冷却した後、ろ過を行い、ろ物にN,N-ジメチルホルムアミド20mLを加えて溶液を調製し、この溶液をイオン交換水中に滴下し、室温にて攪拌を行った。懸濁液をろ過し、得られたろ物を乾燥した。乾固した固体について、1,4-ジオキサンを用いて再結晶を行い、目的とするオリゴアニリン誘導体Bを得た(収量0.49g)。
1H-NMR (400MHz, DMSO-d6) δ[ppm]: 10.41(s, 1H), 8.13(s, 1H), 7.71-7.73(m,1H), 7.53(d, J=7.2Hz, 2H), 7.18(t, J=7.6Hz, 2H), 7.04(d, J=7.2Hz, 2H), 7.01(d, J=7.6Hz, 2H), 6.74-6.78(m, 1H).
1H-NMR (400MHz, DMSO-d6) δ[ppm]: 8.16-8.19(m, 1H), 7.83-7.86(m, 1H), 7.53(d, J=8.8Hz, 2H), 7.36(d, J=8.8Hz), 7.08(d, J=8.8Hz, 2H), 6.93(d, J=8.8Hz, 2H).
[実施例1-1]電荷輸送性ワニスAの調製
合成例1で合成したオリゴアニリン誘導体A0.051g、下記式で表されるフェニルテトラアニリン0.169g及び下記式で表されるアリールスルホン酸A0.344gを、窒素雰囲気下で1,3-ジメチル-2-イミダゾリジノン(DMI)6.7g、シクロヘキサノール(CHA)10g及びプロピレングリコール(PG)3.3gの混合溶媒に溶解し、電荷輸送性ワニスAを調製した。なお、フェニルテトラアニリンは、Bulletin of Chemical Society of Japan, 1994, 67, pp. 1749-1752に記載されている方法に従って合成した。また、アリールスルホン酸Aは、国際公開第2006/025342号に従って合成した。
合成例1で合成したオリゴアニリン誘導体A0.083g、合成例6で合成したアニリン誘導体X0.139g及びリンタングステン酸(関東化学(株)製)0.694gを、窒素雰囲気下でDMI6.7g、CHA10g及びPG3.3gの混合溶媒に溶解し、電荷輸送性ワニスBを調製した。
合成例1で合成したオリゴアニリン誘導体A0.051g、合成例6で合成したアニリン誘導体X0.129g及びアリールスルホン酸A0.383gを、窒素雰囲気下でDMI6.7g、CHA10g及びPG3.3gの混合溶媒に溶解し、電荷輸送性ワニスCを調製した。
合成例1で合成したオリゴアニリン誘導体A0.073g、N,N'-ジフェニルベンジジン(東京化成工業(株)製)0.362g及びアリールスルホン酸A0.384gを、窒素雰囲気下でDMI14g、2,3-ブタンジオール4g及びジプロピレングリコールモノメチルエーテル2gの混合溶媒に溶解し、電荷輸送性ワニスDを調製した。
合成例2で合成したオリゴアニリン誘導体B0.051g、合成例6で合成したアニリン誘導体X0.129g及びアリールスルホン酸A0.383gを、窒素雰囲気下でDMI6.7g、CHA10g及びPG3.3gの混合溶媒に溶解し、電荷輸送性ワニスEを調製した。
合成例3で合成したオリゴアニリン誘導体C0.051g、合成例6で合成したアニリン誘導体X0.129g及びアリールスルホン酸A0.383gを、窒素雰囲気下でDMI6.7g、CHA10g及びPG3.3gの混合溶媒に溶解し、電荷輸送性ワニスFを調製した。
以下の実施例及び比較例において、ITO基板としては、ITOが表面上に膜厚150nmでパターニングされた25mm×25mm×0.7tのガラス基板を用い、使用前にO2プラズマ洗浄装置(150W、30秒間)によって表面上の不純物を除去したものを使用した。
[実施例2-1]
実施例1-1で得られたワニスを、スピンコーターを用いてITO基板に塗布した後、大気下で、80℃で1分間仮焼成をし、次いで230℃で15分間本焼成をし、ITO基板上に40nmの薄膜を形成した。
その上に、蒸着装置(真空度4.0×10-5Pa)を用いてアルミニウム薄膜を形成して単層素子を得た。蒸着は、蒸着レート0.2nm/秒の条件で行った。アルミニウム薄膜の膜厚は100nmとした。
なお、空気中の酸素、水等の影響による特性劣化を防止するため、SLDは封止基板により封止した後、その特性を評価した。封止は、以下の手順で行った。
酸素濃度2ppm以下、露点-85℃以下の窒素雰囲気中で、SLDを封止基板の間に収め、封止基板を接着材((株)MORESCO製モレスコモイスチャーカットWB90US(P))により貼り合わせた。この際、捕水剤(ダイニック(株)製HD-071010W-40)をSLDと共に封止基板内に収めた。貼り合わせた封止基板に対し、UV光を照射(波長365nm、照射量6,000mJ/cm2)した後、80℃で1時間、アニーリング処理して接着材を硬化させた。
実施例1-1で得られたワニスのかわりに実施例1-2~1-6で得られたワニスを用いた以外は、実施例2-1と同様の方法でSLDを作製した。
実施例1-1で得られたワニスのかわりにポリエチレンジオキシチオフェン-ポリスチレンスルホン酸水溶液(H.C.Starck社製、AI4083)を用い、230℃で15分間焼成するかわりに150℃で30分間焼成した以外は、実施例2-1と同様の方法でSLDを作製した。
[実施例3-1]
実施例1-1で得られたワニスを、スピンコーターを用いてITO基板に塗布した後、大気下で、80℃で1分間仮焼成をし、次いで230℃で15分間本焼成をし、ITO基板上に40nmの薄膜(正孔注入層)を形成した。
その上に、蒸着装置(真空度2.0×10-5Pa)を用いてα-NPD及びアルミニウムの薄膜を順次積層し、ホールオンリー素子を得た。蒸着は、蒸着レート0.2nm/秒の条件で行った。α-NPD及びアルミニウムの薄膜の膜厚は、それぞれ20nm及び100nmとした。
なお、空気中の酸素、水等の影響による特性劣化を防止するため、HODは封止基板により封止した後、その特性を評価した。封止は前記と同様の方法で行った。
実施例1-1で得られたワニスのかわりに実施例1-2~1-6で得られたワニスを用いた以外は、実施例3-1と同様の方法でHODを作製した。
実施例1-1で得られたワニスのかわりにポリエチレンジオキシチオフェン-ポリスチレンスルホン酸水溶液(H.C.Starck社製、AI4083)を用い、230℃で15分間焼成するかわりに150℃で30分間焼成した以外は、実施例3-1と同様の方法でHODを作製した。
[実施例4-1]
実施例1-1で得られたワニスを、スピンコーターを用いてITO基板に塗布した後、80℃で1分間乾燥し、更に、大気雰囲気下、230℃で15分間焼成し、ITO基板上に40nmの均一な薄膜(正孔注入層)を形成した。
その上に、蒸着装置(真空度2.0×10-5Pa)を用いてα-NPD20nmを積層した。この際の蒸着レートは、0.2nm/秒とした。次いで、CBPとIr(ppy)3を共蒸着した。共蒸着はIr(ppy)3の濃度が6%になるように蒸着レートをコントロールし、40nm積層させた。次いで、BAlq、フッ化リチウム及びアルミニウムの薄膜を順次積層して有機EL素子を得た。この際、蒸着レートは、BAlq及びアルミニウムについては0.2nm/秒、フッ化リチウムについては0.02nm/秒とした。BAlq、フッ化リチウム及びアルミニウムの薄膜の膜厚は、それぞれ20nm、0.5nm及び100nmとした。
なお、空気中の酸素、水等の影響による特性劣化を防止するため、有機EL素子は封止基板により封止した後、その特性を評価した。封止は前記と同様の方法で行った。
実施例1-1で得られたワニスのかわりに実施例1-2~1-4で得られたワニスを用いた以外は、実施例4-1と同様の方法で有機EL素子を作製した。
実施例1-1で得られたワニスのかわりにポリエチレンジオキシチオフェン-ポリスチレンスルホン酸水溶液(H.C.Starck社製、AI4083)を用い、230℃で15分間焼成するかわりに150℃で30分間焼成した以外は、実施例4-1と同様の方法で有機EL素子を作製した。
[実施例5-1]
実施例1-3で得られたワニスを、スピンコーターを用いてITO基板に塗布した後、80℃で1分間乾燥し、更に、大気雰囲気下、230℃で15分間焼成し、ITO基板上に40nmの均一な薄膜(正孔注入層)を形成した。
その上に、ポリ[(9,9-ジジオクチルフルオレニル-2,7-ジイル)-co-(4,4'-(N-(p-ブチルフェニル))ジフェニルアミン)](和光純薬工業(株)製)の0.7質量%キシレン溶液を、スピンコーターを用いて塗布した後、150℃で10分間焼成し、正孔注入層上に20nmの均一な薄膜(正孔輸送層)を形成した。
更にその上に、蒸着装置(真空度2.0×10-5Pa)を用いてCBPとIr(ppy)3を共蒸着した。共蒸着はIr(ppy)3の濃度が6%になるように蒸着レートをコントロールし、40nm積層させた。次いで、BAlq、フッ化リチウム及びアルミニウムの薄膜を順次積層して有機EL素子を得た。この際、蒸着レートは、BAlq及びアルミニウムについては0.2nm/秒、フッ化リチウムについては0.02nm/秒とした。BAlq、フッ化リチウム及びアルミニウムの薄膜の膜厚は、それぞれ20nm、0.5nm及び100nmとした。
なお、空気中の酸素、水等の影響による特性劣化を防止するため、有機EL素子は封止基板により封止した後、その特性を評価した。封止は前記と同様の方法で行った。
実施例1-3で得られたワニスのかわりに実施例1-5、1-6で得られたワニスを用いた以外は、実施例5-1と同様の方法で有機EL素子を作製した。
Claims (11)
- 下記式(1)で表されるフッ素原子含有オリゴアニリン誘導体からなる電荷輸送性物質、フッ素原子を含有しない電荷輸送性物質、及び有機溶媒を含むことを特徴とする電荷輸送性ワニス。
R2~R10は、それぞれ独立に、水素原子、ハロゲン原子、ニトロ基、シアノ基、又はハロゲン原子で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表し;
Aは、
シアノ基、塩素原子、臭素原子、ヨウ素原子、ニトロ基若しくは炭素数1~20のフルオロアルコキシ基で置換されていてもよい、炭素数1~20のフルオロアルキル基、炭素数3~20のフルオロシクロアルキル基、炭素数4~20のフルオロビシクロアルキル基、炭素数2~20のフルオロアルケニル基若しくは炭素数2~20のフルオロアルキニル基、
シアノ基、塩素原子、臭素原子、ヨウ素原子、ニトロ基、炭素数1~20のアルキル基、炭素数1~20のフルオロアルキル基若しくは炭素数1~20のフルオロアルコキシ基で置換されていてもよい、炭素数6~20のフルオロアリール基、
炭素数1~20のフルオロアルキル基、炭素数3~20のフルオロシクロアルキル基、炭素数4~20のフルオロビシクロアルキル基、炭素数2~20のフルオロアルケニル基若しくは炭素数2~20のフルオロアルキニル基で置換されるとともに、シアノ基、ハロゲン原子若しくは炭素数1~20のフルオロアルコキシ基で置換されていてもよい、炭素数6~20のアリール基、
シアノ基、塩素原子、臭素原子、ヨウ素原子、ニトロ基、炭素数1~20のフルオロアルコキシ基、炭素数1~20のフルオロアルキル基、炭素数3~20のフルオロシクロアルキル基、炭素数4~20のフルオロビシクロアルキル基、炭素数2~20のフルオロアルケニル基若しくは炭素数2~20のフルオロアルキニル基で置換されていてもよい、炭素数7~20のフルオロアラルキル基、又は
炭素数1~20のフルオロアルキル基、炭素数3~20のフルオロシクロアルキル基、炭素数4~20のフルオロビシクロアルキル基、炭素数2~20のフルオロアルケニル基若しくは炭素数2~20のフルオロアルキニル基で置換されるとともに、シアノ基、ハロゲン原子若しくは炭素数1~20のフルオロアルコキシ基で置換されていてもよい、炭素数7~20のアラルキル基
を表し;
kは、1~20の整数を表す。) - Aが、シアノ基、塩素原子、臭素原子、ヨウ素原子、ニトロ基若しくは炭素数1~20のフルオロアルコキシ基で置換されていてもよい、炭素数1~20のフルオロアルキル基、シアノ基、塩素原子、臭素原子、ヨウ素原子、ニトロ基、炭素数1~20のアルキル基、炭素数1~20のフルオロアルキル基若しくは炭素数1~20のフルオロアルコキシ基で置換されていてもよい、炭素数6~20のフルオロアリール基、又は炭素数1~20のフルオロアルキル基、炭素数3~20のフルオロシクロアルキル基、炭素数4~20のフルオロビシクロアルキル基、炭素数2~20のフルオロアルケニル基若しくは炭素数2~20のフルオロアルキニル基で置換されるとともに、シアノ基、ハロゲン原子若しくは炭素数1~20のフルオロアルコキシ基で置換されていてもよい、炭素数6~20のアリール基である請求項1記載の電荷輸送性ワニス。
- Aが、シアノ基、塩素原子、臭素原子、ヨウ素原子、ニトロ基、炭素数1~20のアルキル基、炭素数1~20のフルオロアルキル基若しくは炭素数1~20のフルオロアルコキシ基で置換されていてもよい、3以上のフッ素原子で置換されたフェニル基、又は炭素数3~20のフルオロシクロアルキル基、炭素数4~20のフルオロビシクロアルキル基、炭素数2~20のフルオロアルケニル基若しくは炭素数2~20のフルオロアルキニル基で置換されるとともに、シアノ基、ハロゲン原子若しくは炭素数1~20のフルオロアルコキシ基で置換されていてもよい、フェニル基である請求項2記載の電荷輸送性ワニス。
- R1が、水素原子である請求項1~3のいずれか1項記載の電荷輸送性ワニス。
- R2~R10が、水素原子である請求項1~4のいずれか1項記載の電荷輸送性ワニス。
- kが、2~10の整数である請求項1~5のいずれか1項記載の電荷輸送性ワニス。
- 前記フッ素原子を含有しない電荷輸送性物質が、下記式(4)で表されるものである請求項1~6のいずれか1項記載の電荷輸送性ワニス。
Y1は、それぞれ独立に、水素原子、Z11で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基若しくは炭素数2~20のアルキニル基、又はZ12で置換されていてもよい、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表し;
R17及びR18は、それぞれ独立に、水素原子、ハロゲン原子、ニトロ基、シアノ基、アミノ基、アルデヒド基、ヒドロキシ基、チオール基、スルホン酸基、カルボキシル基、Z11で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基若しくは炭素数2~20のアルキニル基、Z12で置換されていてもよい、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基、又は-NHY2、-NY3Y4、-C(O)Y5、-OY6、-SY7、-SO3Y8、-C(O)OY9、-OC(O)Y10、-C(O)NHY11若しくは-C(O)NY12Y13基を表し;
R11~R16は、それぞれ独立に、水素原子、ハロゲン原子、ニトロ基、シアノ基、アミノ基、アルデヒド基、ヒドロキシ基、チオール基、スルホン酸基、カルボキシル基、Z11で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基若しくは炭素数2~20のアルキニル基、Z12で置換されていてもよい、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基、又は-NHY2、-NY3Y4、-C(O)Y5、-OY6、-SY7、-SO3Y8、-C(O)OY9、-OC(O)Y10、-C(O)NHY11若しくは-C(O)NY12Y13を表し;
Y2~Y13は、それぞれ独立に、Z11で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基若しくは炭素数2~20のアルキニル基、又はZ12で置換されていてもよい、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表し;
Z11は、ハロゲン原子、ニトロ基、シアノ基、アミノ基、アルデヒド基、ヒドロキシ基、チオール基、スルホン酸基、カルボキシル基、又はZ13で置換されていてもよい、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表し;
Z12は、ハロゲン原子、ニトロ基、シアノ基、アミノ基、アルデヒド基、ヒドロキシ基、チオール基、スルホン酸基、カルボキシル基、又はZ13で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基若しくは炭素数2~20のアルキニル基を表し;
Z13は、ハロゲン原子、ニトロ基、シアノ基、アミノ基、アルデヒド基、ヒドロキシ基、チオール基、スルホン酸基、又はカルボキシル基を表し;
m及びnは、それぞれ独立に、0以上の整数を表し、1≦m+n≦20を満たす。) - 更にドーパントを含む請求項1~7のいずれか1項記載の電荷輸送性ワニス。
- 請求項1~8のいずれか1項記載の電荷輸送性ワニスを用いて作製される電荷輸送性薄膜。
- 請求項9記載の電荷輸送性薄膜を有する有機エレクトロルミネッセンス素子。
- 式(2B)で表されるアミン化合物と、式(3B)又は(3B')で表されるフッ素原子含有化合物とを、塩基の存在下で、反応させることを特徴とする、下記式(1)で表されるフッ素原子含有オリゴアニリン誘導体の製造方法。
R2~R10は、それぞれ独立に、水素原子、ハロゲン原子、ニトロ基、シアノ基、又はハロゲン原子で置換されていてもよい、炭素数1~20のアルキル基、炭素数2~20のアルケニル基、炭素数2~20のアルキニル基、炭素数6~20のアリール基若しくは炭素数2~20のヘテロアリール基を表し;
Aは、
シアノ基、塩素原子、臭素原子、ヨウ素原子、ニトロ基若しくは炭素数1~20のフルオロアルコキシ基で置換されていてもよい、炭素数1~20のフルオロアルキル基、炭素数3~20のフルオロシクロアルキル基、炭素数4~20のフルオロビシクロアルキル基、炭素数2~20のフルオロアルケニル基若しくは炭素数2~20のフルオロアルキニル基、
シアノ基、塩素原子、臭素原子、ヨウ素原子、ニトロ基、炭素数1~20のアルキル基、炭素数1~20のフルオロアルキル基若しくは炭素数1~20のフルオロアルコキシ基で置換されていてもよい、炭素数6~20のフルオロアリール基、
炭素数1~20のフルオロアルキル基、炭素数3~20のフルオロシクロアルキル基、炭素数4~20のフルオロビシクロアルキル基、炭素数2~20のフルオロアルケニル基若しくは炭素数2~20のフルオロアルキニル基で置換されるとともに、シアノ基、ハロゲン原子若しくは炭素数1~20のフルオロアルコキシ基で置換されていてもよい、炭素数6~20のアリール基、
シアノ基、塩素原子、臭素原子、ヨウ素原子、ニトロ基、炭素数1~20のフルオロアルコキシ基、炭素数1~20のフルオロアルキル基、炭素数3~20のフルオロシクロアルキル基、炭素数4~20のフルオロビシクロアルキル基、炭素数2~20のフルオロアルケニル基若しくは炭素数2~20のフルオロアルキニル基で置換されていてもよい、炭素数7~20のフルオロアラルキル基、又は
炭素数1~20のフルオロアルキル基、炭素数3~20のフルオロシクロアルキル基、炭素数4~20のフルオロビシクロアルキル基、炭素数2~20のフルオロアルケニル基若しくは炭素数2~20のフルオロアルキニル基で置換されるとともに、シアノ基、ハロゲン原子若しくは炭素数1~20のフルオロアルコキシ基で置換されていてもよい、炭素数7~20のアラルキル基
を表し;
kは、1~20の整数を表し;
Xは、ハロゲン原子を表し、X'は、擬ハロゲン基を表し;
aは、0~19の整数を表し、k>aを満たす。)
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WO2019124413A1 (ja) | 2017-12-20 | 2019-06-27 | 日産化学株式会社 | 電荷輸送性ワニス及び電荷輸送性薄膜 |
WO2019124412A1 (ja) | 2017-12-20 | 2019-06-27 | 日産化学株式会社 | スルホン酸エステル化合物及びその利用 |
CN111492497A (zh) * | 2017-12-20 | 2020-08-04 | 日产化学株式会社 | 电荷传输性清漆和电荷传输性薄膜 |
CN111512459A (zh) * | 2017-12-20 | 2020-08-07 | 日产化学株式会社 | 电荷传输性清漆 |
JPWO2019124415A1 (ja) * | 2017-12-20 | 2020-12-24 | 日産化学株式会社 | 電荷輸送性ワニス |
JPWO2019124413A1 (ja) * | 2017-12-20 | 2021-01-14 | 日産化学株式会社 | 電荷輸送性ワニス及び電荷輸送性薄膜 |
CN111492497B (zh) * | 2017-12-20 | 2023-05-26 | 日产化学株式会社 | 电荷传输性清漆和电荷传输性薄膜 |
JP7310609B2 (ja) | 2017-12-20 | 2023-07-19 | 日産化学株式会社 | 電荷輸送性ワニス |
WO2020203248A1 (ja) * | 2019-04-02 | 2020-10-08 | 株式会社トクヤマ | 4-ハロゲノベンジルアミン誘導体の製造方法 |
US11970577B2 (en) | 2019-04-10 | 2024-04-30 | The Boeing Company | Polyanilines and methods thereof |
Also Published As
Publication number | Publication date |
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EP3306692A4 (en) | 2019-02-20 |
CN107112428A (zh) | 2017-08-29 |
TW201726828A (zh) | 2017-08-01 |
JP6384605B2 (ja) | 2018-09-05 |
EP3306692B1 (en) | 2020-03-11 |
EP3306692A1 (en) | 2018-04-11 |
US10720584B2 (en) | 2020-07-21 |
TWI627242B (zh) | 2018-06-21 |
KR101954425B1 (ko) | 2019-03-05 |
CN107112428B (zh) | 2019-01-22 |
KR20170049556A (ko) | 2017-05-10 |
JPWO2016190326A1 (ja) | 2017-07-27 |
US20180151805A1 (en) | 2018-05-31 |
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