WO2016165233A1 - 有机发光二极管显示面板及其制作方法、显示装置 - Google Patents
有机发光二极管显示面板及其制作方法、显示装置 Download PDFInfo
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- WO2016165233A1 WO2016165233A1 PCT/CN2015/084741 CN2015084741W WO2016165233A1 WO 2016165233 A1 WO2016165233 A1 WO 2016165233A1 CN 2015084741 W CN2015084741 W CN 2015084741W WO 2016165233 A1 WO2016165233 A1 WO 2016165233A1
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- pixel defining
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 238000000034 method Methods 0.000 claims abstract description 53
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- 239000011347 resin Substances 0.000 claims description 15
- 229920005989 resin Polymers 0.000 claims description 15
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
Definitions
- Embodiments of the present invention relate to an organic light emitting diode display panel, a method of fabricating the same, and a display device.
- organic light emitting diode (OLED) devices Compared with liquid crystal displays (LCDs), organic light emitting diode (OLED) devices have the advantages of self-luminescence, fast response, wide viewing angle, high brightness, colorful color, and thinness. Display technology.
- the film formation methods of OLED mainly include evaporation process and solution process.
- the evaporation process is relatively mature in small-scale applications, and the technology has been applied to mass production.
- Solution process OLED film formation methods mainly include inkjet printing, nozzle coating, spin coating, screen printing, etc. Among them, inkjet printing technology is considered to be a large-sized OLED due to its high material utilization rate and large size production. An important way to achieve mass production.
- Embodiments of the present invention provide an organic light emitting diode display panel, a manufacturing method thereof, and a display device, which are used to reduce a mask, reduce production cost, and improve production efficiency.
- An embodiment of the present invention provides a method of fabricating an organic light emitting diode display panel, the method comprising: forming an anode layer, a light emitting layer, and a cathode layer on a substrate; the method further comprising: on the anode layer Depositing a first pixel defining layer film; depositing a second pixel defining layer film on the first pixel defining layer film, forming a second pixel defining layer by a patterning process for the second pixel defining layer film; by dry etching The exposed first pixel defining layer film is removed to form a first pixel defining layer; wherein the first pixel defining layer is provided with lyophilic properties, and the second pixel defining layer is provided with lyophobic properties.
- the material of the second pixel defining layer film forming the second pixel defining layer is a fluorine-free resin, and the formed second pixel defining layer is subjected to a fluorination treatment so that the second pixel defining layer is provided Lyophilic properties.
- the gas used in the fluorination treatment of the formed second pixel defining layer is CxFy gas.
- the gas used in the fluorination treatment of the formed second pixel defining layer is a carbon tetrafluoride gas.
- the material of the second pixel defining layer film forming the second pixel defining layer is polyimide, or acrylic resin, or silicone.
- the etching gas during the dry etching is carbon tetrafluoride gas and oxygen.
- the material of the first pixel defining layer film forming the first pixel defining layer is silicon oxide or silicon nitride.
- the cross-sectional shape of the second pixel defining layer is a positive trapezoid.
- Another embodiment of the present invention further provides an organic light emitting diode display panel, which is an organic light emitting diode display panel fabricated by the above method.
- Still another embodiment of the present invention also provides a display device including the above-described organic light emitting diode display panel.
- FIG. 1 is a schematic structural diagram of a prior art single layer pixel defining layer
- FIG. 2 is a schematic structural view of a prior art double-layer pixel defining layer
- FIG. 3 is a flowchart of a method for fabricating an organic light emitting diode display panel according to an embodiment of the present invention
- FIG. 4 to FIG. 8 are schematic structural diagrams of different stages of an organic light emitting diode display panel in a manufacturing process according to an embodiment of the present invention.
- the inkjet printing process requires a pixel defining layer (PDL) 11 to be formed on the electrode layer 10 of the substrate in advance to define precise flow of ink droplets into the designated sub-pixel region.
- PDL 11 requires a lyophobic material with a small surface energy to ensure that the ink droplets spread out within the pixel without spilling.
- the ink droplet is likely to form a thin edge and a thick uneven film in the middle after drying.
- the uneven region 12 shown in it is also the coffee ring effect.
- the direct defects caused by this type of coffee ring effect are firstly the presence of holes in the edges of the pixels and leakage, followed by uneven brightness in the pixels.
- the first layer PDL 21 still uses a lyophobic material having a small surface energy
- a second layer PDL 22 is designed under the first layer PDL 21, and the second layer PDL 22 has a large surface energy.
- the fabrication process of the two-layer PDL structure includes: forming a second layer of PDL 22 through the first mask, and then fabricating the first layer of PDL 21 through the second mask.
- the double-layer PDL design can effectively avoid the holes at the edge of the pixel, and since the light-emitting area of the light-emitting area is larger than the area of the effective pixel area, the uneven thickness region 23 of the partial light-emitting area does not emit light, thereby reducing the unevenness of the light in the pixel.
- the two-layer PDL design adds a mask to the single-layer PDL design, which increases the risk of poor manufacturing and increases production costs.
- the single-layer PDL structure causes leakage of pixels at the edges and uneven brightness in the pixels.
- two masks are required, and the manufacturing cost is high; both methods exist.
- Embodiments of the present invention provide an organic light emitting diode display panel, a manufacturing method thereof, and a display device, which are used to reduce a mask layer to prepare a double layer PDL, reduce production cost, and improve production efficiency.
- an embodiment of the present invention provides a method for fabricating an organic light emitting diode display panel, the method comprising the steps of: forming an anode layer, a light emitting layer, and a cathode layer on a substrate; the method further comprising the following steps:
- a first electrode layer is first formed on the base substrate 40, and the first electrode layer is usually an anode layer 41. Since the OLED device has both bottom emission and top emission, a bottom-emitting device structure is formed by providing an anode having a transparency and a reflective cathode structure, and a device structure of a top emission is formed by a structure in which a transparent cathode and a reflective anode are disposed. Therefore, depending on the device structure, the material selection of the anode layer 41 is also different.
- the material of the anode layer 41 is a transparent or translucent material having a high work function such as indium tin oxide (ITO), silver (Ag), nickel oxide (NiO), aluminum (Al), or graphene.
- ITO indium tin oxide
- the anode layer 41 is formed on the base substrate 40 by magnetron sputtering; of course, in the actual production process, the anode layer 41 can also be fabricated by other methods, and the anode layer 41 can be fabricated. There is technology, so I won't go into details here.
- a first pixel defining layer film 51 is then deposited on the anode layer 41.
- an embodiment of the present invention is applied to the anode layer 41 by a plasma enhanced chemical vapor deposition (PECVD) method.
- PECVD plasma enhanced chemical vapor deposition
- a first pixel defining layer film 51 is deposited thereon.
- the first pixel defining layer film 51 can also be deposited by other film forming methods, and the embodiment of the present invention does not limit the film forming method.
- the material of the first pixel defining layer film 51 in the embodiment of the present invention is silicon oxide (SiO 2 ), silicon nitride (SiN), ceramic powder, metal oxide or the like.
- the material of the first pixel defining layer film 51 in the embodiment of the present invention is SiO 2 or SiN.
- a second pixel defining layer film is then deposited on the first pixel defining layer film 51, and a second pixel defining layer 61 is formed by the patterning process for the second pixel defining layer film.
- the patterning process in the embodiment of the present invention may include: part or all of the processes of coating, exposure, development, etching, and photoresist removal of the photoresist.
- a photoresist is coated on the deposited second pixel defining layer film, and then the coated photoresist is exposed and developed to retain the photoresist at the position where the second pixel defining layer needs to be formed.
- the method for fabricating the second pixel defining layer 61 in the actual production process may further be: depositing a second pixel defining layer film on the first pixel defining layer film 51, and depositing the second pixel defining layer film properties and photolithography The properties of the glue are the same, and then the deposited second pixel defining layer film is exposed and developed, and after the development, the second pixel defining layer film at the position where the second pixel defining layer is formed is retained, and the retained second pixel defining layer is retained.
- the film is the second pixel defining layer 61 in the embodiment of the invention.
- the cross-sectional shape of the second pixel defining layer 61 in the embodiment of the present invention may be a positive trapezoid.
- the cross-sectional shape of the second pixel defining layer 61 in the embodiment of the present invention may also be other shapes, and the embodiment of the present invention does not limit the shape of the cross section of the second pixel defining layer 61.
- the height of the second pixel defining layer 61 produced by the embodiment of the present invention is 0.1 ⁇ m to 100 ⁇ m, or the height of the second pixel defining layer 61 may be 1 ⁇ m to 5 ⁇ m.
- the exposed first pixel defining layer film is removed by dry etching to form a first pixel defining layer 71; the first pixel defining layer 71 is provided with lyophilic characteristics, and the second pixel defining layer 61 is provided with a thin layer. Liquid characteristics.
- the etching gas used is carbon tetrafluoride (CF 4 ) gas and oxygen (O 2 ).
- the region where the first pixel defining layer film is not covered by the second pixel defining layer 61 is etched by CF 4 and O 2 , and the region covered by the second pixel defining layer 61 is not etched.
- a first pixel defining layer 71 is formed after the etching.
- CF 4 and O 2 etch the first pixel defining layer film, which also causes a certain thinning of the second pixel defining layer, so during the actual operation, the deposited The thickness of the second pixel defining layer film needs to be greater than the target thickness of the second pixel defining layer.
- the etching principle of dry etching is known and will not be described again here.
- the material of the second pixel defining layer film forming the second pixel defining layer 61 in the embodiment of the present invention is a fluorine-free resin.
- the material of the second pixel defining layer film forming the second pixel defining layer 61 in the embodiment of the present invention is polyimide, or acrylic resin, or a material containing a hydrocarbon bond, a hydroxyl group or an amino functional group such as silicone.
- the method further comprises: performing a fluorination treatment on the second pixel defining layer such that the second pixel defining layer has lyophobic characteristics.
- the gas used in the fluorination treatment of the second pixel defining layer is C x F y gas, and x and y are integers greater than or equal to 1.
- the gas used in the fluorination treatment of the second pixel defining layer is CF 4 gas, as shown in FIG. 8 , when performing, after the dry etching removes the exposed first pixel defining layer film, By switching the CF 4 and O 2 gases in the dry etching to CF 4 gas, the CF 4 gas fluorinates the surface of the second pixel defining layer material, and the hydroxyl, amino, hydrogen and CF 4 gases of the organic resin are replaced.
- the reaction is such that a fluorinated resin layer 80 is formed on the surface of the organic resin, and the surface energy of the fluorinated resin layer 80 is drastically lowered, so that the second pixel defining layer 61 has lyophobic characteristics.
- the fluorinated resin is left for a long time, and the surface characteristics of the resin are slowly lost. Therefore, the fluorinated resin needs to be used in a short time. In the actual production process, the fluorinated resin is used, for example, within half an hour.
- the material of the second pixel defining layer film in the embodiment of the present invention may also be a fluorine-containing resin.
- the second pixel defining layer 61 shown in FIG. 7 has a lyophobic property, and does not need to define a layer for the second pixel. 61 is subjected to fluorination treatment.
- the second pixel defining layer film is made of a fluorine-containing resin, in the subsequent dry etching process, the characteristics of the second pixel defining layer are affected to some extent, so that the lyophobic property of the second pixel defining layer is lowered.
- the second pixel defining layer 61 may be subjected to fluorination treatment again according to actual conditions.
- a light-emitting layer is formed on the base substrate on which the first pixel defining layer and the second pixel defining layer are formed.
- the manufacturing method of the light-emitting layer in the embodiment of the present invention may be the prior art, and details are not described herein again.
- a cathode layer is formed on the substrate on which the light-emitting layer is formed. The method for fabricating the cathode layer in the embodiment of the present invention can be used in the prior art, and details are not described herein again.
- a hole injection layer and/or a hole transport layer may be formed between the anode layer and the light-emitting layer, and a method for fabricating the hole injection layer and/or the hole transport layer may be a prior art. No longer.
- an electron injecting layer and/or an electron transporting layer may be formed between the light emitting layer and the cathode layer. The method for fabricating the electron injecting layer and/or the electron transporting layer may adopt the prior art, and details are not described herein again.
- the embodiments of the present invention provide a method for fabricating an organic light emitting diode display panel.
- the method includes fabricating an anode layer, a light emitting layer, and a cathode layer on a substrate, wherein the method further comprises: depositing a first pixel defining layer film on the anode layer; and defining a layer in the first pixel Depositing a second pixel defining layer film on the film, forming a second pixel defining layer by a patterning process for the second pixel defining layer film; removing the exposed first pixel defining layer film by dry etching to form a first pixel defining a layer; the first pixel defining layer has a lyophilic property, and the second pixel defining layer has a lyophobic property.
- the double-layer pixel defining layer is formed, only one mask is needed, and compared with the two-layer mask defining layer, the mask layer can be reduced, the production cost can be reduced, and the
Abstract
一种有机发光二极管显示面板及其制作方法、显示装置，该方法包括在衬底基板（40）上制作阳极层（41）、发光层和阴极层，在阳极层（41）上沉积第一像素界定层薄膜（51）；在第一像素界定层薄膜（51）上沉积第二像素界定层薄膜，通过构图工艺将第二像素界定层薄膜图案化而形成第二像素界定层（61）；通过干法刻蚀去除暴露出的第一像素界定层薄膜（51），形成第一像素界定层（71）；其中，第一像素界定层（71）具备亲液特性，第二像素界定层（61）具备疏液特性。该方法制备双层像素界定层，可以减少一道掩膜板，降低生产成本，提升生产效率。
Description
本发明的实施例涉及一种有机发光二极管显示面板及其制作方法、显示装置。
有机发光二极管(Organic Light Emitting Diode，OLED)器件相对于液晶显示屏(Liquid Crystal Display，LCD)，具有自发光、反应快、视角广、亮度高、色彩艳、轻薄等优点，被认为是下一代显示技术。
OLED的成膜方式主要有蒸镀制程和溶液制程。蒸镀制程在小尺寸应用较为成熟，目前该技术已经应用于量产中。溶液制程OLED成膜方式主要有喷墨打印、喷嘴涂覆、旋涂、丝网印刷等，其中喷墨打印技术由于其材料利用率较高、可以实现大尺寸化生产，被认为是大尺寸OLED实现量产的重要方式。
发明内容
本发明实施例提供了一种有机发光二极管显示面板及其制作方法、显示装置，用以减少一道掩膜板，降低生产成本，提升生产效率。
本发明的一个实施例提供的一种有机发光二极管显示面板的制作方法，该方法包括在衬底基板上制作阳极层、发光层和阴极层；所述方法还可以包括：在所述阳极层上沉积第一像素界定层薄膜；在所述第一像素界定层薄膜上沉积第二像素界定层薄膜，针对所述第二像素界定层薄膜通过构图工艺形成第二像素界定层；通过干法刻蚀去除暴露出的第一像素界定层薄膜，形成第一像素界定层；其中，所述第一像素界定层具备亲液特性，所述第二像素界定层具备疏液特性。
例如，形成所述第二像素界定层的第二像素界定层薄膜的材料为不含氟树脂，对形成的所述第二像素界定层进行氟化处理，以使所述第二像素界定层具备疏液特性。
例如，所述对形成的所述第二像素界定层进行氟化处理时采用的气体为CxFy气体。
例如，所述对形成的所述第二像素界定层进行氟化处理时采用的气体为四氟化碳气体。
例如，形成所述第二像素界定层的第二像素界定层薄膜的材料为聚酰亚胺，或亚克力树脂，或有机硅。
例如，所述干法刻蚀时的刻蚀气体为四氟化碳气体和氧气。
例如，形成所述第一像素界定层的第一像素界定层薄膜的材料为氧化硅或氮化硅。
例如，所述第二像素界定层的截面形状为正梯形。
本发明的另一个实施例还提供了一种有机发光二极管显示面板，所述有机发光二极管显示面板为采用上述方法制作得到的有机发光二极管显示面板。
本发明的再一个实施例还提供了一种显示装置，该显示装置包括上述的有机发光二极管显示面板。
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1为现有技术单层像素界定层的结构示意图；
图2为现有技术双层像素界定层的结构示意图；
图3为本发明实施例提供的一种有机发光二极管显示面板的制作方法流程图；
图4-图8分别为本发明实施例提供的一种有机发光二极管显示面板在制作过程中的不同阶段的结构示意图。
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，
所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
如图1所示，制备OLED的工艺中，喷墨打印工艺需要预先在基板的电极层10上制作像素界定层(PDL)11，以限定墨滴精确的流入指定的亚像素区。PDL 11要求采用表面能较小的疏液型材料，从而保证墨滴在像素内铺展而不溢出。但是在墨滴与PDL 11的接触之处，由于两者间表面能差异、PDL大的坡角以及墨滴自身干燥行为，墨滴干燥后容易形成边缘薄，中间厚的不均匀薄膜，如图中所示的不均匀区域12，也即咖啡环效应。此种类型的咖啡环效应导致的直接缺陷首先是像素边缘存在孔洞而漏电，其次是像素内亮度不均。
为了避免像素内咖啡环效应引起的缺陷，一般采用双层PDL结构加以避免。如图2所示，其中第一层PDL 21仍采用表面能较小的疏液型材料，并在第一层PDL 21的下面设计第二层PDL 22，第二层PDL 22采用表面能大的无机材料。双层PDL结构的制作过程包括：通过第一道掩膜板制作第二层PDL22，之后通过第二道掩膜板制作第一层PDL21。双层PDL设计可有效避免像素边缘的孔洞，而且由于其发光区的发光面积大于有效像素区的面积，部分发光区边缘厚度不均区域23不发光，从而减小像素内发光不均匀性。但是，双层PDL设计与单层PDL设计相比，增加了一道掩膜板，从而加大了制作不良的风险，并相应增加了生产成本。
综上所述，单层PDL结构会导致像素边缘漏电，像素内亮度不均的问题；双层PDL结构在制作时，需要采用两道掩膜板，制作成本较高；这两种方式均存在一定的问题。
本发明实施例提供了一种有机发光二极管显示面板及其制作方法、显示装置，用以减少一道掩膜板制备双层PDL，降低生产成本，提升生产效率。
下面结合附图详细介绍本发明实施例提供的有机发光二极管显示面板的制作方法。
如图3所示，本发明的一个实施例提供了一种有机发光二极管显示面板的制作方法，该方法包括在衬底基板上制作阳极层、发光层和阴极层所述方法还包括如下步骤：
S301、在所述阳极层上沉积第一像素界定层薄膜；
S302、在所述第一像素界定层薄膜上沉积第二像素界定层薄膜，针对所述第二像素界定层薄膜通过构图工艺形成第二像素界定层；
S303、通过干法刻蚀去除暴露出的第一像素界定层薄膜，形成第一像素界定层；其中，所述第一像素界定层具备亲液特性，所述第二像素界定层具备疏液特性。下面结合附图详细介绍本发明实施例提供的有机发光二极管显示面板的制作过程。
如图4所示，首先在衬底基板40上制作第一电极层，第一电极层通常为阳极层41。由于OLED器件有底发光和顶发光两种，通过设置具有透明性的阳极和反射性的阴极结构形成底发射的器件结构，反之通过设置透明阴极和反射阳极的结构形成顶发光的器件结构。因此，根据器件结构不同，阳极层41材料的选择也不同。通常阳极层41的材料选择氧化铟锡(ITO)、银(Ag)、氧化镍(NiO)、铝(Al)、石墨烯等高功函的透明或半透明材料。本发明的实施例在衬底基板40上通过磁控溅射的方法制作阳极层41；当然，在实际生产过程中，阳极层41还可以通过其它方法制作，阳极层41的制作过程可以采用已有技术，这里不再赘述。
如图5所示，接着在阳极层41上沉积第一像素界定层薄膜51，例如，本发明的实施例通过等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition，PECVD)的方法在阳极层41上沉积第一像素界定层薄膜51。当然，在实际生产过程中，还可以通过其它的成膜方法沉积第一像素界定层薄膜51，本发明的实施例并不对成膜方法做限定。本发明的实施例中的第一像素界定层薄膜51的材料为氧化硅(SiO2)、氮化硅(SiN)、陶瓷粉、金属氧化物等。例如，本发明实施例中的第一像素界定层薄膜51的材料为SiO2或SiN。
如图6所示，接着在第一像素界定层薄膜51上沉积第二像素界定层薄膜，针对该第二像素界定层薄膜通过构图工艺形成第二像素界定层61。本发明的实施例中的构图工艺可以包括：光刻胶的涂覆、曝光、显影、刻蚀以及光刻胶的去除的部分或全部过程。例如，本发明实施例在沉积得到的第二像素界定层薄膜上涂覆光刻胶，然后对涂覆的光刻胶进行曝光、显影，保留需要形成第二像素界定层位置处的光刻胶，接着刻蚀去除暴露出的第二像素界定层
薄膜，最后去除剩余的光刻胶，形成第二像素界定层61。当然，在实际生产过程中制作第二像素界定层61的方法还可以是，在第一像素界定层薄膜51上沉积第二像素界定层薄膜，沉积的第二像素界定层薄膜的性质与光刻胶的性质相同，接着对沉积得到的第二像素界定层薄膜进行曝光、显影，显影后保留需要形成第二像素界定层位置处的第二像素界定层薄膜，被保留下来的第二像素界定层薄膜即为本发明的实施例中的第二像素界定层61。
例如，本发明实施例中的第二像素界定层61的截面形状可以为正梯形。当然，本发明实施例中的第二像素界定层61的截面形状还可以为其它形状，本发明实施例并不对第二像素界定层61的截面的形状做限定。例如，为了将本发明实施例中第二像素界定层61的截面形状制作为正梯形，可以通过精确调整曝光前的烘烤温度、曝光过程中的曝光能量及掩膜板与衬底基板之间的距离、曝光后的烘烤温度等来实现。本发明实施例制作得到的第二像素界定层61的高度为0.1μm到100μm，或者第二像素界定层61的高度可以为1μm到5μm。
如图7所示，接着通过干法刻蚀去除暴露出的第一像素界定层薄膜，形成第一像素界定层71；第一像素界定层71具备亲液特性，第二像素界定层61具备疏液特性。例如，本发明实施例对暴露出的第一像素界定层薄膜进行干法刻蚀时，采用的刻蚀气体为四氟化碳(CF4)气体和氧气(O2)。在刻蚀过程中，第一像素界定层薄膜未被第二像素界定层61覆盖的区域被CF4和O2刻蚀，而被第二像素界定层61覆盖的区域则不被刻蚀，刻蚀后形成第一像素界定层71。另外，在干法刻蚀的过程中，CF4和O2对第一像素界定层薄膜刻蚀的同时也会对第二像素界定层造成一定的减薄，因此在实际操作过程中，沉积的第二像素界定层薄膜的厚度需要大于第二像素界定层的目标厚度。干法刻蚀的刻蚀原理是已知的，这里不再赘述。
例如，本发明实施例中形成第二像素界定层61的第二像素界定层薄膜的材料为不含氟树脂。例如，形成本发明实施例中的第二像素界定层61的第二像素界定层薄膜的材料为聚酰亚胺，或亚克力树脂，或有机硅等含碳氢键、羟基、氨基官能团的材料。
当本发明实施例中的第二像素界定层薄膜61的材料为不含氟树脂时，图7所示的第二像素界定层61的特性为亲液性，而本发明实施例要求制作得到
的第二像素界定层为疏液性，因此，当本发明实施例中的第二像素界定层薄膜的材料为不含氟树脂时，通过干法刻蚀去除暴露出的第一像素界定层薄膜，形成第一像素界定层后，所述方法还包括：对第二像素界定层进行氟化处理，使得第二像素界定层具备疏液特性。
例如，本发明实施例对第二像素界定层进行氟化处理时采用的气体为CxFy气体，x、y为大于等于1的整数。例如，本发明实施例对第二像素界定层进行氟化处理时采用的气体为CF4气体，如图8所示，实施时，干法刻蚀去除暴露出的第一像素界定层薄膜后，通过切换干法刻蚀时的CF4和O2气体为CF4气体，CF4气体对第二像素界定层材料的表面进行氟化保护，有机树脂的羟基、氨基、氢和CF4气体发生取代反应，从而在有机树脂表面形成一层氟化的树脂层80，氟化的树脂层80的表面能急剧降低，从而使得第二像素界定层61具备疏液特性。在实际生产过程中，氟化后的树脂放置时间过长，树脂的表面特性会慢慢的丧失，因此，氟化后的树脂需要在短时间内使用。在实际生产过程中，氟化后的树脂例如在半个小时以内使用。
当然，本发明实施例中的第二像素界定层薄膜的材料也可以为含氟树脂，此时图7所示的第二像素界定层61具备疏液特性，不需要再对第二像素界定层61进行氟化处理。但是，第二像素界定层薄膜采用含氟树脂时，在后续进行干法刻蚀的过程中，会对第二像素界定层的特性造成一定的影响，使得第二像素界定层的疏液特性降低。此时，根据实际情况，也可以再次对第二像素界定层61进行氟化处理。
接着，在制作有第一像素界定层和第二像素界定层的衬底基板上制作发光层，本发明实施例中发光层的制作方法可以采用已有技术，这里不再赘述。接着，在制作有发光层的衬底基板上制作阴极层，本发明实施例中阴极层的制作方法可以采用已有技术，这里不再赘述。
另外，本发明实施例还可以在阳极层和发光层之间制作空穴注入层和/或空穴传输层，空穴注入层和/或空穴传输层的制作方法可以采用已有技术，这里不再赘述。本发明实施例还可以在发光层和阴极层之间制作电子注入层和/或电子传输层，电子注入层和/或电子传输层的制作方法可以采用已有技术，这里不再赘述。
综上所述，本发明实施例提供了一种有机发光二极管显示面板的制作方
法，该方法包括在衬底基板上制作阳极层、发光层和阴极层，其中，所述方法还包括：在所述阳极层上沉积第一像素界定层薄膜；在所述第一像素界定层薄膜上沉积第二像素界定层薄膜，针对所述第二像素界定层薄膜通过构图工艺形成第二像素界定层；通过干法刻蚀去除暴露出的第一像素界定层薄膜，形成第一像素界定层；所述第一像素界定层具备亲液特性，所述第二像素界定层具备疏液特性。本发明实施例在制作双层像素界定层时，只需要采用一道掩膜板，与采用两道掩膜板制作双层像素界定层相比，能够减少一道掩膜板，降低生产成本，提升生产效率。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护范围，本发明的保护范围由所附的权利要求确定。
本申请要求于2015年4月16日递交的中国专利申请第201510181465.6号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。
Claims (10)
- 一种有机发光二极管显示面板的制作方法，包括在衬底基板上制作阳极层、发光层和阴极层，所述方法还包括：在所述阳极层上沉积第一像素界定层薄膜；在所述第一像素界定层薄膜上沉积第二像素界定层薄膜，通过构图工艺将所述第二像素界定层薄膜图案化而形成第二像素界定层；通过干法刻蚀去除暴露出的第一像素界定层薄膜，形成第一像素界定层；其中，所述第一像素界定层具备亲液特性，所述第二像素界定层具备疏液特性。
- 根据权利要求1所述的制作方法，其中，形成所述第二像素界定层的第二像素界定层薄膜的材料为不含氟树脂，对形成的所述第二像素界定层进行氟化处理，以使所述第二像素界定层具备疏液特性。
- 根据权利要求2所述的制作方法，其中，所述对形成的所述第二像素界定层进行氟化处理时采用的气体为CxFy气体。
- 根据权利要求3所述的制作方法，其中，所述对形成的所述第二像素界定层进行氟化处理时采用的气体为四氟化碳气体。
- 根据权利要求2所述的制作方法，其中，形成所述第二像素界定层的第二像素界定层薄膜的材料为聚酰亚胺，或亚克力树脂，或有机硅。
- 根据权利要求1所述的制作方法，其中，所述干法刻蚀时的刻蚀气体为四氟化碳气体和氧气。
- 根据权利要求1所述的制作方法，其中，形成所述第一像素界定层的第一像素界定层薄膜的材料为氧化硅或氮化硅。
- 根据权利要求1所述的制作方法，其中，所述第二像素界定层的截面形状为正梯形。
- 一种有机发光二极管显示面板，其中，所述有机发光二极管显示面板为采用权利要求1-8任一项所述方法制作得到的有机发光二极管显示面板。
- 一种显示装置，包括权利要求9所述的有机发光二极管显示面板。
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| CN105720085B (zh) * | 2016-04-06 | 2020-02-07 | 广东聚华印刷显示技术有限公司 | 一种像素结构、显示面板及制作方法 |
| CN105655382B (zh) | 2016-04-08 | 2019-10-18 | 京东方科技集团股份有限公司 | 显示基板制作方法、显示基板和显示装置 |
| CN105826358B (zh) * | 2016-05-24 | 2019-02-05 | 京东方科技集团股份有限公司 | 一种显示基板及其制备方法、显示面板、显示装置 |
| CN106654069A (zh) * | 2017-01-25 | 2017-05-10 | 京东方科技集团股份有限公司 | 一种显示面板及其制作方法、显示装置 |
| CN108630728B (zh) | 2017-03-24 | 2020-07-28 | 京东方科技集团股份有限公司 | 像素界定层、有机电致发光器件及其制备方法和显示装置 |
| CN107068722B (zh) * | 2017-04-20 | 2020-06-09 | 京东方科技集团股份有限公司 | 一种阵列基板、显示面板及显示装置 |
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| CN104752490A (zh) * | 2015-04-16 | 2015-07-01 | 京东方科技集团股份有限公司 | 一种有机发光二极管显示面板及其制作方法、显示装置 |
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| US9972665B2 (en) | 2018-05-15 |
| CN104752490B (zh) | 2016-04-06 |
| CN104752490A (zh) | 2015-07-01 |
| US20170104042A1 (en) | 2017-04-13 |
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