WO2021077500A1 - 有机发光显示面板及其制作方法、有机发光显示装置 - Google Patents

有机发光显示面板及其制作方法、有机发光显示装置 Download PDF

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Publication number
WO2021077500A1
WO2021077500A1 PCT/CN2019/118579 CN2019118579W WO2021077500A1 WO 2021077500 A1 WO2021077500 A1 WO 2021077500A1 CN 2019118579 W CN2019118579 W CN 2019118579W WO 2021077500 A1 WO2021077500 A1 WO 2021077500A1
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Prior art keywords
light
emitting display
organic light
substrate
optical film
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PCT/CN2019/118579
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English (en)
French (fr)
Inventor
李祥龙
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深圳市华星光电半导体显示技术有限公司
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Priority to US16/626,347 priority Critical patent/US11257889B2/en
Publication of WO2021077500A1 publication Critical patent/WO2021077500A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/877—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning

Definitions

  • the invention relates to the technical field of organic light-emitting display, in particular to an organic light-emitting display panel, a manufacturing method thereof, and an organic light-emitting display device.
  • Organic light-emitting devices organic
  • OLED Organic light-emitting devices
  • the production method of the organic functional thin film layer of light-emitting diode is divided into vacuum thermal evaporation (vacuum thermal deposition and solution-casting method).
  • the solution film forming method is subdivided into spin coating, ink-jet printing, and screen printing. printing) and other methods.
  • the solution film forming method is to coat the solution on the substrate first, and then remove the solvent in the solution through the process of vacuum drying and high-temperature oven or hot plate heating and drying, so that the solid matter in the solution is deposited on the substrate and forms a ⁇ Layer film.
  • the printing substrate 1 is formed by forming a pixel definition layer 12 (PDL) and a photoresist 13 (bank) and printing ink 14 (ink).
  • PDL pixel definition layer 12
  • a photoresist 13 bank
  • printing ink 14 ink
  • the edge of the photoresist 13 is caused by the infiltration of the ink 14 or the coffee ring effect, etc., which reduces the quality of the film formed after the ink 14 is dried, thereby causing uneven light emission in the light-emitting area due to uneven film thickness, which restricts the light-emitting effect.
  • the pixel emission uniformity of the conventional printed circuit board 1 is greatly affected.
  • the light-emitting area will form a concave liquid surface 15a as shown in FIG. 1A. Due to the different processing methods of the wettability of the ink 14 at the edge of the photoresist 13, it may cause a convex liquid surface 15b as shown in FIG. 1B. In another case, due to the strong or weak coffee ring effect of the ink 14, uneven film formation of the light-emitting area will also result in the formation of a concave liquid surface 15a or a convex liquid surface 15b. Therefore, the inner film surface of the pixel that is convex or concave will produce uneven light emission, which affects the performance of the uniformity of light emission in the pixel. .
  • a hydrophobic substance such as a fluorine-containing compound
  • the object of the present invention is to provide an organic light-emitting display panel, a manufacturing method thereof, and an organic light-emitting display device. Without reducing the area of the pixel light-emitting area, a light-shielding film is used to block the light emission of the concave/convex surface at the edge of the pixel light-emitting area to improve The uniformity of the pixel light emission and the quality of the device are improved.
  • the present invention provides an organic light emitting display panel including a substrate, an electrode layer and a pixel definition layer.
  • the electrode layers are arranged on the substrate at intervals.
  • the pixel defining layer is disposed on the substrate, and the pixel defining layer includes preparing a plurality of dams and light-emitting openings formed between any two adjacent dams, wherein the dams include a dam body and a light-shielding film, so The projection of the shading film on the substrate is greater than or equal to the projection of the dam body on the substrate.
  • it further includes an optical film layer disposed above the light-emitting opening, and the surface of the optical film layer away from the substrate has a microstructure or is added with scattering particles.
  • it further comprises a glass cover plate arranged on the pixel definition layer, and the optical film layer is arranged on the glass cover plate.
  • the material of the scattering particles includes silicon dioxide or silicon oxide
  • the material of the optical film layer is polyacrylate, acrylic resin or melamine resin.
  • the refractive index of the scattering particles is different from the refractive index of the optical film layer.
  • the light-shielding film is a mask, a black matrix or a glass cover plate with a black matrix
  • the electrode layer is an anode
  • the size of the light-shielding opening is smaller than that of the light-emitting opening and is between 1-8 microns ( um).
  • the present invention also provides a manufacturing method of an organic light emitting display panel, which includes the following steps:
  • a pixel definition layer is formed on the substrate, the pixel definition layer includes preparing a plurality of dams and light-emitting openings formed between any two adjacent dams, wherein the dams include a dam body and a light-shielding film , The projection of the shading film on the substrate is greater than or equal to the projection of the dam body on the substrate.
  • step 30 further includes an optical film layer formed above the light-emitting opening, and the surface of the optical film layer away from the substrate is further formed with microstructures or added with scattering particles.
  • the optical film layer includes one of anti-reflection films selected from alternately laminated high-refractive index materials and low-refractive index materials, and one side surface of which is roughened to form a viewing angle improving film with a microstructure.
  • the light-shielding film is coated on each of the dam bodies of the pixel definition layer through a yellow photolithography process, and then patterned through an exposure/development process.
  • the present invention provides an organic light emitting display device including the organic light emitting display panel as described in the above embodiments.
  • it further includes an optical film layer disposed above the light-emitting opening, and the surface of the optical film layer away from the substrate has a microstructure or is added with scattering particles.
  • it further comprises a glass cover plate arranged on the pixel definition layer, and the optical film layer is arranged on the glass cover plate.
  • the material of the scattering particles includes silicon dioxide or silicon oxide
  • the material of the optical film layer is polyacrylate, acrylic resin or melamine resin.
  • the refractive index of the scattering particles is different from the refractive index of the optical film layer.
  • the light-shielding film is a mask, a black matrix or a glass cover plate with a black matrix
  • the electrode layer is an anode
  • a light-shielding opening is formed between any two adjacent light-shielding films, and the size of the light-shielding opening is smaller than the size of the light-emitting opening and is between 1 and 8 microns.
  • the present invention also has the following effects.
  • the light-shielding film used in the present invention can be used to block uneven and color-shifted edge light-emitting areas caused by uneven film formation, thereby improving the quality and quality of uniform light emission of pixels.
  • the light-shielding material is provided with an optical film layer from the light-shielding opening, and the optical film layer can further improve the light color uniformity and the performance of the viewing angle.
  • FIG. 1A is a schematic cross-sectional view of a conventional organic light emitting display panel
  • FIG. 1B is another schematic cross-sectional view of a conventional organic light emitting display panel
  • FIG. 2 is a plan view of the light-shielding film of the organic light-emitting display panel of the present invention
  • FIG. 3 is a schematic cross-sectional view of the organic light emitting display panel of the present invention.
  • FIG. 5 is a block flow diagram of the manufacturing method of the organic light emitting display panel of the present invention.
  • FIG. 2 is a plan view of the light-shielding film of the organic light emitting display panel of the present invention
  • FIG. 3 is a schematic cross-sectional view of the organic light emitting display panel of the present invention.
  • the present invention provides an organic light emitting display panel 2 including a substrate 21, an electrode layer 22 and a pixel definition layer 23.
  • the organic light-emitting display panel 2 is preferably applied in the field of OLED display; in other preferred embodiments, the organic light-emitting display panel 2 can also be applied in the display technology field with uneven brightness/chromaticity in the pixel edge area and the center area.
  • quantum dot light-emitting diodes QLED
  • Micro Light Emitting Diode Display Micro-LED
  • QD-OLED QD-OLED technology that combines OLED and QD are not limited.
  • the electrode layers 22 are arranged on the substrate 21 at intervals.
  • the pixel definition layer 23 is provided on the substrate 21.
  • the pixel definition layer 23 includes a plurality of dams 231 and light-emitting openings 232 formed between any two adjacent dams 231.
  • the dam body 231 includes a dam body 233 and a light shielding film 235, and the projection of the light shielding film 235 on the substrate 21 is greater than or equal to the projection of the dam body 233 on the substrate 21.
  • the light-emitting opening 232 between two adjacent light-shielding films 235 further includes a light-shielding opening 31, and the light-shielding opening 31 is smaller than the light-emitting opening 232.
  • the substrate 21 may be a conventional substrate in the art, including but not limited to a TFT substrate.
  • the light-shielding film 235 is preferably a mask; in other alternative embodiments, the light-shielding film 235 may also be a black matrix, a glass cover plate with a black matrix, or other suitable materials.
  • the light-shielding film 235 can be directly arranged on each dam body 233 of the pixel definition layer 23, or arranged on a cover plate (the figure is omitted) and aligned with the panel with pixels (the figure is omitted) to shield the pixels. The phenomenon of non-uniform light emission at the edge, thereby improving and enhancing the purpose of uniform light emission of pixels.
  • the electrode layer 22 is an anode, which can be made of conventional pixel electrode materials in the art, such as indium tin oxide (ITO), indium tin oxide/silver/indium tin oxide (ITO/Ag/ITO), graphene (graphene) Wait.
  • ITO indium tin oxide
  • ITO/Ag/ITO indium tin oxide/silver/indium tin oxide
  • graphene graphene Wait.
  • the size of the light-shielding opening 31 is smaller than the size of the light-emitting opening 232 by 1-8 micrometers (um).
  • the light-emitting opening 232 between any two adjacent dams 231 and the electrode layer 22 disposed on the light-emitting opening 232 define a pixel light-emitting area 25.
  • the light-shielding film 235 blocks the uneven light emission of the concave/convex surface at the edge of the pixel light-emitting region 25, thereby improving the uniformity of pixel light emission and the quality of the device. .
  • FIG. 4 also includes an optical film layer 4 disposed opposite to the light emitting opening 232 and a glass cover plate 5 disposed on the pixel defining layer 23.
  • the optical film layer 4 is disposed between the light-shielding opening 31 and the light-emitting opening 232, and is attached to the lower surface of the light-shielding film 235 or the upper surface of two adjacent dams 231.
  • the optical film layer 4 can also be arranged on one side surface of the glass cover plate 5, which can be changed as required.
  • the optical film layer 4 is preferably a dam 231 mainly made of epoxy resin and added with dyes or pigments.
  • the surface of the optical film layer 4 of this embodiment away from the substrate 21 (the figure is omitted) can have a microstructure (the figure is omitted) through roughening treatment, and special microstructures such as microlenses and microprisms are formed to improve the viewing angle.
  • scattering particles (not shown in the figure) can be added to the optical film layer 4 to refract and scatter light.
  • the material of the scattering particles includes silicon dioxide or silicon oxide
  • the material of the optical film layer 4 is polyacrylate, acrylic resin or melamine resin
  • the refractive index of the scattering particles is different from that of the optical film layer. Refractive index.
  • the optical film layer 4 may also be an anti-reflection film in which high refractive index materials and low refractive index materials are alternately laminated, wherein high refractive index materials such as titanium oxide (TiO 2 ), chromium oxide (Cr 2 O 3 ) Or a mixed polymer material, the low refractive index material is silicon dioxide (SiO 2 ) or silicon oxide (SiOx).
  • high refractive index materials such as titanium oxide (TiO 2 ), chromium oxide (Cr 2 O 3 ) Or a mixed polymer material
  • the low refractive index material is silicon dioxide (SiO 2 ) or silicon oxide (SiOx).
  • the hollow portion (ie, the light-shielding opening 31) in the light-shielding film 235 can be combined with the optical film layer 4 to improve the light color uniformity, viewing angle and other functions.
  • the present invention also provides a method for manufacturing an organic light emitting display panel 2, which includes the following steps: step S10, providing a substrate 21; step S20, depositing electrode layers spaced on the substrate 21 22; Step S30, forming a pixel defining layer 23 on the substrate 21, the pixel defining layer 23 includes preparing a plurality of dams 231 and formed between any two adjacent dams 231, wherein the The dam 231 includes a dam body 233 and a light-shielding film 235, and the projection of the light-shielding film 235 on the substrate 21 is greater than or equal to the projection of the dam body 233 on the substrate 21.
  • the light-shielding film 235 is formed with a plurality of light-shielding openings 31 corresponding to each of the light-emitting openings 232, and the light-shielding opening 31 is smaller than the light-emitting opening 232, and the size of the light-shielding opening 31 is smaller than that of the light-emitting opening 232.
  • the size is between 1-8 microns (um).
  • the substrate 21 in step S10 is a conventional substrate in the art, including but not limited to a TFT substrate.
  • the electrode layer 22 may be vacuum deposited (vacuum It is made by deposition, sputtering, physical vapor deposition (PVD) or chemical vapor deposition (CVD).
  • the material of the electrode layer 22 includes one or a combination of metal oxide and simple metal, for example, ITO, ITO/Ag/ITO, or graphene.
  • step S30 it also includes an OLED device layer vapor-deposited on the light-shielding film 235 (the figure is omitted) and an encapsulation layer (the figure is omitted) formed on the OLED device layer.
  • the OLED device layer includes a hole injection layer (HIL), a hole transport layer (HTL), a light emitting layer (EML), an electron transport layer (ETL), an electron injection layer (EIL), and a cathode.
  • the encapsulation layer includes sealant encapsulation (Dam), thin film encapsulation (TFE), desiccant filling encapsulation (fill), face seal or glass powder laser encapsulation (laser encapsulation). sealing) made.
  • the encapsulation layer may include organic and/or inorganic materials.
  • the optical film layer 4 formed above the light-emitting opening 232 is further included.
  • the optical film layer 4 is formed between the light-shielding opening 31 and the light-emitting opening 232, and is coated on the lower surface of the light-shielding film 235 or the upper surface of two adjacent dams 231.
  • the optical film layer 4 includes a dam material made of epoxy resin (Epoxy) added with dyes or pigments.
  • the optical film layer 4 includes an anti-reflection film selected from alternately laminated high refractive index materials and low refractive index materials, a viewing angle improvement film with a microstructure formed on one side surface through a roughening treatment, and the optical film One of the viewing angle improving films with scattering particles added to the layer 4, thereby improving the uniformity of light color and viewing angle.
  • the material of the scattering particles includes silicon dioxide or silicon oxide.
  • the material of the optical film layer 4 is polyacrylate, acrylic resin or melamine resin.
  • the refractive index of the scattering particles is different from the refractive index of the optical film layer.
  • the anti-reflective optical film layer 4 is generally made by evaporation, sputtering, vapor deposition or coating, and the preferred method is vapor deposition or coating.
  • the optical film layer 4 for shading light and the functional film for improving the viewing angle or light color are prepared by processes such as photolithography or development.
  • the light-shielding film 235 is coated on each of the dam bodies 233 of the pixel definition layer 23 by a yellow photolithography process, and then patterned by an exposure/development process.
  • the coating described here may be inkjet printing, blade coating, printing, spin coating, dip coating or pulling, etc., among which inkjet printing is preferred.
  • the light-shielding film 235 can also be made by means of evaporation, sputtering, or vapor deposition, which can be changed as required.
  • the light-shielding film 235 for making the pixel definition layer 23 is made using a mask.
  • the light-shielding film 235 may also be a commonly used black matrix material or a glass cover plate with a black matrix material.
  • solution processing technology and printing technology are used to manufacture the organic light emitting display panel 2.
  • the non-uniform light-emitting part of the edge of the pixel is blocked, so as to solve the problem of pixels caused by uneven film thickness in the existing solution processing technology.
  • the problem of uneven light emission so as to realize a pixel substrate with uniform light emission.
  • the manufacturing method can also be applied to solution-processed display panels such as quantum dots QLED/QD-OLED, and is not limited.
  • the present invention also provides an organic light emitting display device, including the organic light emitting display panel 2 described in the above embodiments.
  • Other structures related to the organic light emitting display device are related to the prior art, and will not be repeated here.

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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
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  • Electroluminescent Light Sources (AREA)

Abstract

一种有机发光显示面板及其制作方法、显示装置，其中所述有机发光显示面板，包括基板、电极层、像素定义层及遮光膜。电极层间隔的设置在所述基板上。像素定义层设置在所述基板上，且包括制备多个坝体和形成在任二相邻所述坝体间的发光开口，其中所述坝体包括坝体本体以及遮光膜，所述遮光膜在所述基板上的投影大于或等于所述坝体本体在所述基板上的投影。

Description

有机发光显示面板及其制作方法、有机发光显示装置 技术领域
本发明涉及一种有机发光显示技术领域，尤指一种有机发光显示面板及其制作方法、有机发光显示装置。
 背景技术
有机发光器件(OLED，organic light-emitting diode)的有机功能薄膜层的制作方法分为真空热蒸镀(vacuum thermal deposition)与溶液成膜法(solution-casting method)。溶液成膜法又细分为旋涂法(spin coating)、喷墨打印(ink-jet printing)、丝网印刷(screen printing)等方法。溶液成膜法是将溶液先涂覆在基板上，然后通过真空干燥与高温炉或者热板加热烘干的过程将溶液中的溶剂去除，从而使溶液中的固体物质在基板上析出并形成一层薄膜。
具体而言，如图1A及图1B所示，印刷用基板1在制作像素定义层12(PDL)和光阻13(bank)并通过打印墨水14(ink)制成。光阻13的边缘因墨水14浸润或因咖啡环效应等原因，造成墨水14干燥后的成膜质量下降，从而使在发光区因膜厚不均匀导致发光不均匀，制约了发光效果。换言之，现有的印刷基板1的像素发光均匀性受到较大的影响。
 技术问题
由于印刷基板1上的像素定义层12表面形成有疏水性物质，例如含氟化合物等，会导致发光区域形成如图1A的凹液面15a。由于光阻13边缘墨水14浸润性的处理方式不同，又可能导致如图1B的凸液面15b。在另一情况中，由于墨水14咖啡环效应的强或弱，也会导致发光区域成膜不均匀而形成凹液面15a或者凸液面15b。因此，形成凸或凹的像素内膜面将产生发光不均匀的现象，影响像素内发光均匀性的表现。。
 技术解决方案
本发明的目的，在于提供一种有机发光显示面板及其制作方法、有机发光显示装置，在不减小像素发光区域的面积情况下，通过遮光膜遮挡像素发光区域边缘凹面/凸面的发光，提高了像素发光的均匀性与器件的品质。
为达到本发明前述目的，本发明提供一种有机发光显示面板，包括基板、电极层及像素定义层。电极层间隔的设置在所述基板上。像素定义层设置在所述基板上，所述像素定义层包括制备多个坝体和形成在任二相邻所述坝体间的发光开口，其中所述坝体包括坝体本体以及遮光膜，所述遮光膜在所述基板上的投影大于或等于所述坝体本体在所述基板上的投影。
优选地，还包括设置于所述发光开口上方的光学膜层，所述光学膜层远离所述基板的表面具有微结构或添加有散射粒子。
优选地，还包括设置在所述像素定义层上的玻璃盖板，所述光学膜层设置在所述玻璃盖板。
优选地，所述散射粒子材质包括二氧化硅或氧化硅；
所述光学膜层的材质为聚丙烯酸酯类、丙烯树脂或密胺树脂；及
所述散射粒子的折射率不同于所述光学膜层的折射率。
优选地，所述遮光膜为掩膜版、黑色矩阵或具有黑色矩阵的玻璃盖板，所述电极层为阳极，所述遮光开口的尺寸小于所述发光开口尺寸且介于1-8微米(um)。
本发明还提供一种有机发光显示面板的制作方法，包括如下步骤:
S10、提供基板；
S20、在所述基板上间隔的沉积电极层；及
S30、在所述基板上形成像素定义层，所述像素定义层包括制备多个坝体和形成在任二相邻所述坝体间的发光开口，其中所述坝体包括坝体本体以及遮光膜，所述遮光膜在所述基板上的投影大于或等于所述坝体本体在所述基板上的投影。
优选地，在步骤30后，还包括形成在所述发光开口上方的光学膜层，所述光学膜层远离所述基板的表面还形成有微结构或添加有散射粒子。
优选地，所述光学膜层包括选自于高折射率材料和低折射率材料相交替层叠的抗反射膜，以及一侧表面通过粗糙化处理而形成有微结构的视角改善膜之一。
优选地，在步骤30中，所述遮光膜通过黄光光刻工艺涂布在所述像素定义层的各所述坝体本体上，然后通过曝光/显影工艺进行图案化。
再者，本发明又提供一种有机发光显示装置，包括如上述实施例所述的有机发光显示面板。
优选地，还包括设置于所述发光开口上方的光学膜层，所述光学膜层远离所述基板的表面具有微结构或添加有散射粒子。
优选地，还包括设置在所述像素定义层上的玻璃盖板，所述光学膜层设置在所述玻璃盖板。
优选地，所述散射粒子材质包括二氧化硅或氧化硅；
所述光学膜层的材质为聚丙烯酸酯类、丙烯树脂或密胺树脂；及
所述散射粒子的折射率不同于所述光学膜层的折射率。
优选地，所述遮光膜为掩膜版、黑色矩阵或具有黑色矩阵的玻璃盖板，所述电极层为阳极。
优选地，任两相邻的所述遮光膜之间形成有遮光开口，所述遮光开口的尺寸小于所述发光开口尺寸且介于1-8微米。
 有益效果
本发明还具有以下功效，本发明采用遮光膜能够应用在遮挡成膜不均匀而导致的不均匀和偏色的边缘发光区域，从而提升像素均匀发光的品质与质量。同时，为进一步改善光色均匀度和视角(angle of view)，遮光材料从的遮光开口设置光学膜层，所述光学膜层能够进一步改善光色均匀度和视角的表现。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1A是现有有机发光显示面板的横截面示意图；
图1B是现有有机发光显示面板的另一横截面示意图；
图２是本发明有机发光显示面板的遮光膜平面图；
图３是本发明有机发光显示面板的横截面示意图；
图４是本发明有机发光显示面板的另一横截面示意图；及
图５是本发明有机发光显示面板的制作方法的方块流程图。
 本发明的最佳实施方式
在具体实施方式中提及“实施例”意指结合实施例描述的特定特征、结构或特性可以包含在本发明的至少一个实施例中。在说明书中的不同位置出现的相同用语并非必然被限制为相同的实施方式，而应当理解为与其它实施例互为独立的或备选的实施方式。在本发明提供的实施例所公开的技术方案启示下，本领域的普通技术人员应理解本发明所描述的实施例可具有其他符合本发明构思的技术方案结合或变化。
请参照图2及图3所示，图2为本发明有机发光显示面板的遮光膜平面图，图3为本发明有机发光显示面板的横截面示意图。如图所示，本发明提供一种有机发光显示面板2，包括基板21、电极层22及像素定义层23。所述有机发光显示面板2优选的应用在OLED显示领域；在其他次选的实施例中，有机发光显示面板2也可以应用在像素边缘区域和中心区域亮度/色度不均匀的显示技术领域，例如量子点发光二极管(Quantum Dots Light Emitting Diode Display；QLED)显示技术、微发光二极管显示器（Micro Light Emitting Diode Display；Micro-LED）显示技术或是OLED和QD相结合的QD-OLED技术，并不限定。
电极层22间隔的设置在所述基板21上。像素定义层23设置在所述基板21上。所述像素定义层23包括制备多个坝体(Dam)231和形成在任二相邻所述坝体231间的发光开口232。所述坝体231包括坝体本体233以及遮光膜235，所述遮光膜235在所述基板21上的投影大于或等于所述坝体本体233在所述基板21上的投影。换言之，两相邻的所述遮光膜235之间对应所述发光开口232还包括遮光开口31，且所述遮光开口31小于所述发光开口232。
具体而言，在如图3所示的实施例中，所述基板21可选用本领域常规的基板，包括但不限于TFT基板。所述遮光膜235优选为掩膜版(Mask)；在其他次选的实施例中，遮光膜235也可以为黑色矩阵、具有黑色矩阵的玻璃盖板或其他适合的材料。所述遮光膜235可以直接设置在像素定义层23的各坝体本体233之上，或者设置在盖板(图略)上再和具有像素的面板(图略)对位贴合，以遮挡像素边缘非均匀发光的现象，从而改善并提升像素均匀发光的目的。
所述电极层22为阳极，其可采用本领域常规像素电极材料制成，例如氧化铟锡(ITO)、氧化铟锡/银/氧化铟锡(ITO/Ag/ITO)、石墨烯（graphene）等。所述遮光开口31的尺寸小于所述发光开口232的尺寸介于1-8微米(um)。任二相邻的所述坝体231间的所述发光开口232及设置于所述发光开口232的所述电极层22定义有像素发光区域25。因此，在本实施例中，在不减小像素发光区域25的面积情况下，通过遮光膜235遮挡像素发光区域25边缘凹面/凸面的不均匀发光，提高了像素发光的均匀性与器件的品质。
请一并参照图4所示，还包括相对的设置在所述发光开口232上方的光学膜层4以及设置在所述像素定义层23上的玻璃盖板5。所述光学膜层4设置在所述遮光开口31与所述发光开口232之间，且贴设在所述遮光膜235的下表面或二相邻的所述坝体231的上表面。在另一实施例中，所述光学膜层4也可以设置在所述玻璃盖板5一侧表面，视需要而改变。
光学膜层4优选为以环氧树脂为主体并添加染料或颜料的坝体231。为了实现本实施例各像素均匀发光，以及改善光色和视角的目的。本实施例的光学膜层4远离所述基板21的表面(图略)通过粗糙化处理能够具有微结构(图略)，形成有微透镜、微棱镜等特殊微观结构用以改善视角。在另一实施例中，光学膜层4内能够添加散射粒子(图略)，使光线发生折射和散射。所述散射粒子材质包括二氧化硅或氧化硅，所述光学膜层4的材质为聚丙烯酸酯类、丙烯树脂或密胺树脂，其中所述散射粒子的折射率不同于所述光学膜层的折射率。
在一实施例中，光学膜层4也可以是高折射率材料和低折射率材料相交替层叠的抗反射膜，其中高折射率材料例如氧化钛(TiO 2)、氧化铬(Cr 2O 3) 或其混合的高分子材料，低折射率材料则为二氧化硅(SiO 2)或氧化硅(SiOx)。遮光膜235中的镂空部分(即遮光开口31)能够结合光学膜层4来改善光色均匀度、视角等功能。
请一并参照图5所示，本发明还提供一种有机发光显示面板2的制作方法，其包括如下步骤:步骤S10、提供基板21；步骤S20、在所述基板21上间隔的沉积电极层22；步骤S30、在所述基板21上形成像素定义层23，所述像素定义层23包括制备多个坝体231和形成在任二相邻所述坝体231间的发光开口232，其中所述坝体231包括坝体本体233以及遮光膜235，所述遮光膜235在所述基板21上的投影大于或等于所述坝体本体233在所述基板21上的投影。换言之，所述遮光膜235形成有对应各所述发光开口232的多个遮光开口31，且所述遮光开口31小于所述发光开口232，其中所述遮光开口31的尺寸小于所述发光开口232的尺寸介于1-8微米(um)。
在步骤S10中的所述基板21选用本领域常规的基板，包括但不限于TFT基板。在步骤S20中的所述电极层22可以通过真空蒸镀(vacuum deposition)、溅射(sputter)、物理气相沉积（PVD）或化学气相沉积（CVD）制成。所述电极层22的材料包括金属氧化物、金属单质其中之一或其组合例如，ITO、ITO/Ag/ITO、或石墨烯等。
在步骤S30后，还包括蒸镀在所述遮光膜235上的OLED器件层(图略)和形成在OLED器件层上的封装层(图略)。所述OLED器件层包括空穴注入层(HIL)、电洞传输层(HTL)、发光层(EML)、电子传输层(ETL)、电子注入层(EIL)和阴极。所述封装层包括通过框胶封装(Dam)、薄膜封装(TFE)、干燥剂填充封装（fill）、面封装(face seal)或玻璃粉末镭射封装(laser sealing)制成。封装层可以包括有机和/或无机材料。
在步骤30后，还包括形成在所述发光开口232上方的光学膜层4。所述光学膜层4形成在所述遮光开口31与所述发光开口232之间，且涂布在所述遮光膜235的下表面或二相邻的所述坝体231的上表面。所述光学膜层4包括由环氧树脂（Epoxy）添加染料或颜料的坝体材料所形成。所述光学膜层4包括选自于高折射率材料和低折射率材料相交替层叠的抗反射膜、一侧表面通过粗糙化处理而形成有微结构的视角改善膜，以及在所述光学膜层4内添加有散射粒子的视角改善膜其中之一，进而改善光色均匀度和视角。
所述散射粒子材质包括二氧化硅或氧化硅。所述光学膜层4的材质为聚丙烯酸酯类、丙烯树脂或密胺树脂。所述散射粒子的折射率不同于所述光学膜层的折射率。具体的，抗反射的光学膜层4一般通过蒸镀、溅射、气相沉积或者涂布制成，其中优选的方法为气相沉积或涂布。用来遮光的光学膜层4以及改善视角或光色的功能膜则是以光刻或显影等工艺制备得到。
需特别说明的是，在步骤30中，所述遮光膜235通过黄光光刻工艺涂布在所述像素定义层23的各所述坝体本体233上，然后通过曝光/显影工艺进行图案化。在此所述的涂布可以是喷墨打印、刮涂、打印、旋涂、浸涂或提拉等，其中优选为喷墨打印。在其他次选的实施例中，也可以采用蒸镀、溅射或气相沉积等手段制作所述遮光膜235，视需要而改变。
制作像素定义层23的遮光膜235利用掩膜版制成。然而在其他实施例中，遮光膜235也可以是常用的黑色矩阵材料或具有黑色矩阵材料的玻璃盖板。本实施例采用溶液加工技术和印刷工艺制作有机发光显示面板2，通过利用遮光膜235，遮挡像素边缘非均匀发光的部分，解决现有溶液加工技术中常见的因薄膜膜厚不均导致的像素发光不均匀的问题，从而实现均匀发光的像素基板。所述制作方法也可以应用在量子点QLED/QD-OLED等溶液加工的显示面板，并不限定。
本发明还提供一种有机发光显示装置，包括上述实施例所述的有机发光显示面板2。有关有机发光显示装置的其他结构为现有技术，在此不多加赘述。
综上所述，虽然本发明结合其具体实施例而被描述，应该理解的是，许多替代、修改及变化对于那些本领域的技术人员将是显而易见的。因此，其意在包含落入所附权利要求书的范围内的所有替代、修改及变化。

Claims (15)

  1. 一种有机发光显示面板，包括:
    基板；
    电极层，间隔的设置在所述基板上；及
    像素定义层，设置在所述基板上，所述像素定义层包括制备多个坝体和形成在任二相邻所述坝体间的发光开口，其中所述坝体包括坝体本体以及遮光膜；
    其中，所述遮光膜在所述基板上的投影大于或等于所述坝体本体在所述基板上的投影。
  2. 如权利要求1所述有机发光显示面板，其中还包括设置于所述发光开口上方的光学膜层，所述光学膜层远离所述基板的表面具有微结构或添加有散射粒子。
  3. 如权利要求2所述有机发光显示面板，还包括设置在所述像素定义层上的玻璃盖板，所述光学膜层设置在所述玻璃盖板。
  4. 如权利要求2所述有机发光显示面板，其中所述散射粒子材质包括二氧化硅或氧化硅；
    所述光学膜层的材质为聚丙烯酸酯类、丙烯树脂或密胺树脂；及
    所述散射粒子的折射率不同于所述光学膜层的折射率。
  5. 如权利要求1所述有机发光显示面板，其中所述遮光膜为掩膜版、黑色矩阵或具有黑色矩阵的玻璃盖板，所述电极层为阳极，任两相邻的所述遮光膜之间形成有遮光开口，所述遮光开口的尺寸小于所述发光开口尺寸且介于1-8微米。
  6. 一种有机发光显示面板的制作方法，包括如下步骤:
       S10、提供基板；
       S20、在所述基板上间隔的形成电极层；及
       S30、在所述基板上形成像素定义层，所述像素定义层包括制备多个坝体和形成在任二相邻所述坝体间的发光开口，其中所述坝体包括坝体本体以及遮光膜，所述遮光膜在所述基板上的投影大于或等于所述坝体本体在所述基板上的投影。
  7. 如权利要求6所述有机发光显示面板的制作方法，其中在步骤30后，还包括形成在所述发光开口上方的光学膜层，所述光学膜层远离所述基板的表面还形成有微结构或添加有散射粒子。
  8. 如权利要求7所述有机发光显示面板的制作方法，其中所述光学膜层包括选自于高折射率材料和低折射率材料相交替层叠的抗反射膜，以及一侧表面通过粗糙化处理而形成有微结构的视角改善膜其中之一。
  9. 如权利要求6所述有机发光显示面板的制作方法，其中在步骤30中，所述遮光膜通过黄光光刻工艺涂布在所述像素定义层的各所述坝体本体上，然后通过曝光/显影工艺进行图案化。
  10. 一种有机发光显示装置，包括如权利要求1所述的有机发光显示面板。
  11. 如权利要求10所述有机发光显示装置，还包括设置于所述发光开口上方的光学膜层，所述光学膜层远离所述基板的表面具有微结构或添加有散射粒子。
  12. 如权利要求11所述有机发光显示装置，还包括设置在所述像素定义层上的玻璃盖板，所述光学膜层设置在所述玻璃盖板。
  13. 如权利要求12所述有机发光显示装置，其中所述散射粒子材质包括二氧化硅或氧化硅；
    所述光学膜层的材质为聚丙烯酸酯类、丙烯树脂或密胺树脂；及
    所述散射粒子的折射率不同于所述光学膜层的折射率。
  14. 如权利要求10所述有机发光显示装置，其中所述遮光膜为掩膜版、黑色矩阵或具有黑色矩阵的玻璃盖板，所述电极层为阳极。
  15. 如权利要求10所述有机发光显示装置，其中任两相邻的所述遮光膜之间形成有遮光开口，所述遮光开口的尺寸小于所述发光开口尺寸且介于1-8微米。
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103928489A (zh) * 2013-08-02 2014-07-16 厦门天马微电子有限公司 有机发光二极管显示面板及其形成方法
CN106206970A (zh) * 2016-08-31 2016-12-07 深圳市华星光电技术有限公司 一种发光面板及其制备方法
US20170170245A1 (en) * 2015-12-14 2017-06-15 Everdisplay Optronics (Shanghai) Limited Organic light emitting diode display and method for manufacturing the same
CN109192758A (zh) * 2018-08-27 2019-01-11 上海天马微电子有限公司 显示面板和显示装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102162954A (zh) * 2006-01-24 2011-08-24 夏普株式会社 显示装置、显示装置的制造方法、基板及彩色滤光片基板
JP2015128003A (ja) * 2013-12-27 2015-07-09 ソニー株式会社 表示装置および電子機器
CN107331647B (zh) * 2017-06-14 2019-07-23 京东方科技集团股份有限公司 一种显示基板及其制作方法、显示装置
CN107546338B (zh) * 2017-08-29 2019-08-02 上海天马微电子有限公司 有机发光显示面板及有机发光显示装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103928489A (zh) * 2013-08-02 2014-07-16 厦门天马微电子有限公司 有机发光二极管显示面板及其形成方法
US20170170245A1 (en) * 2015-12-14 2017-06-15 Everdisplay Optronics (Shanghai) Limited Organic light emitting diode display and method for manufacturing the same
CN106206970A (zh) * 2016-08-31 2016-12-07 深圳市华星光电技术有限公司 一种发光面板及其制备方法
CN109192758A (zh) * 2018-08-27 2019-01-11 上海天马微电子有限公司 显示面板和显示装置

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