WO2020151073A1 - Oled显示面板的制作方法 - Google Patents
Oled显示面板的制作方法 Download PDFInfo
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- WO2020151073A1 WO2020151073A1 PCT/CN2019/078976 CN2019078976W WO2020151073A1 WO 2020151073 A1 WO2020151073 A1 WO 2020151073A1 CN 2019078976 W CN2019078976 W CN 2019078976W WO 2020151073 A1 WO2020151073 A1 WO 2020151073A1
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- WIPO (PCT)
- Prior art keywords
- layer
- display panel
- oled display
- manufacturing
- protective layer
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000010410 layer Substances 0.000 claims abstract description 132
- 239000011241 protective layer Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 59
- 238000004519 manufacturing process Methods 0.000 claims description 40
- 239000010408 film Substances 0.000 claims description 27
- 239000002346 layers by function Substances 0.000 claims description 20
- 238000007639 printing Methods 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 8
- 238000001039 wet etching Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 6
- 230000002209 hydrophobic effect Effects 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 230000005525 hole transport Effects 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical class [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
Definitions
- the present application relates to the technical field of display panels, and in particular to a manufacturing method of an OLED display panel.
- OLED Organic Light Emitting Diode
- printing method There are two main methods for preparing OLED (Organic Light Emitting Diode) devices: evaporation method and printing method.
- the technology for preparing large, medium and small OLED display devices using the full evaporation method is quite mature compared to printing technology. It is used for commercial production, but the full evaporation technology has the problem of low material utilization rate and difficulty in preparing high-resolution devices.
- the material utilization rate of printing technology to prepare OLED devices is as high as 90%, and the cost of preparing OLED devices is about 17% lower than that of full vapor deposition technology, and no mask is required during the printing process, which can be used for the preparation of high resolution OLED display devices.
- the process of printing technology includes patterning the anode layer of ITO (Indium Tin Oxides, ITO, indium tin oxide, transparent conductive film) to prepare a pixel defining layer to form a pixel opening, and the edge portion of ITO overlaps the pixel defining layer.
- ITO Indium Tin Oxides
- ITO indium Tin Oxides
- transparent conductive film transparent conductive film
- the present application provides a method for manufacturing an OLED display panel.
- the protective layer on the anode layer is removed after the pixel defining layer and the pixel opening are formed, which solves the problem of printing organic functional film on the anode layer. It is a technical problem that the ink material cannot spread out at the time, which affects the display effect and service life of the OLED display panel.
- This application provides a method for manufacturing an OLED display panel, including:
- the pixel defining layer Forming a pixel defining layer on the protective layer and the base substrate; the pixel defining layer encloses a pixel opening on the protective layer;
- the protective layer in the pixel opening is etched to expose the anode layer.
- the etching the protective layer in the pixel opening to expose the anode layer includes:
- Dry etching or wet etching is used to remove the protective layer in the pixel opening to expose the anode layer.
- the etching the protective layer in the pixel opening to expose the anode layer includes:
- the protective layer in the pixel opening is patterned by dry etching or wet etching to expose the anode layer with a predetermined shape.
- the exposed shape of the anode layer includes a square, a circle, a parallelogram or a pentagram.
- the thickness of the protective layer is 1 to 200 nanometers.
- the material of the anode layer is a hydrophilic conductive material
- the material of the pixel defining layer is a hydrophobic material
- the material of the protective layer is a hydrophilic material.
- the protective layer is an organic film, and the organic film includes a hydrophilic photoresist film.
- the protective layer is an inorganic film, and the inorganic film includes a silicon dioxide film or a silicon nitride film.
- the anode layer includes a transparent conductive film.
- the material of the pixel defining layer includes a photoresist material
- the pixel defining layer includes a single-layer pixel defining layer, a double-layer pixel defining layer, or a stripe-shaped pixel defining layer.
- the method further includes:
- An organic functional layer is formed in the pixel opening.
- the forming an organic functional layer in the pixel opening includes:
- the ink material is dried to form an organic functional layer.
- the organic functional layer includes a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer.
- the ink material includes a solution material corresponding to the organic functional layer that can be printed.
- the beneficial effect of this application is that in this embodiment, before the pixel defining layer is formed, a protective layer is first covered on the anode layer, so that in the process of forming the pixel opening, even if a part of the pixel defining layer residue or other foreign particles are located In the pixel opening, it can also be removed when the protective layer is removed to ensure that there are no other impurities on the anode layer in the pixel opening, so that the ink material can be completely on the anode layer in the pixel opening when printing the ink material of the organic functional layer.
- the spreading avoids problems such as uneven light emission, bright or dark spots of the OLED display panel, improves the display effect and performance of the OLED display panel, and extends the service life of the OLED display panel.
- FIG. 1 is a schematic flowchart of an exemplary manufacturing method of an OLED display panel
- FIG. 2 is a schematic block diagram of a process flow of a manufacturing method of an OLED display panel provided by an embodiment of the application;
- FIG. 3 is a schematic flowchart of a manufacturing method of an OLED display panel provided by an embodiment of the application.
- FIG. 4 is a schematic flowchart of another method for manufacturing an OLED display panel provided by an embodiment of the application.
- FIG. 5 is a top view of a single pixel opening area provided by an embodiment of the application.
- FIG. 6 is a top view of another single pixel opening area provided by an embodiment of the application.
- FIG. 7 is a top view of another single pixel opening area provided by an embodiment of the application.
- connection should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected or integrally connected; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal communication between two components.
- connection should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected or integrally connected; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal communication between two components.
- the pixel defining layer 5 encloses the pixel opening 6 on the anode layer 3.
- the pixel opening 6 there are some pixel defining layer residues 10 or There are other micron-level foreign particles, so that when the ink material 8 of the organic functional layer 7 is printed on the anode layer 3 in the pixel opening 6, part of the ink material 8 cannot be spread, causing the organic functional film layer formed after drying to have edges and
- the anode layer 3 where the pixel defining layer residue 10 or other foreign particles is not covered by an organic functional film causes the OLED display panel 1 to have uneven display problems such as uneven light emission, bright or dark spots.
- an embodiment of the present application provides a manufacturing method of an OLED display panel 1, including the following steps:
- S201 providing a base substrate; forming an anode layer on the base substrate.
- the anode layer 3 is formed on the base substrate 2. Specifically, a whole layer of the anode layer 3 is laid on the base substrate 2 first, and then the anode layer 3 is patterned to form a plurality of layers arranged at intervals. An anode layer with 3 patterns.
- S202 Cover the anode layer with a protective layer.
- a protective layer 4 is covered on the anode layer 3. Specifically, a whole protective layer 4 is covered on the base substrate 2 and the formed anode layer 3, and then the protective layer 4 is patterned so that only The anode layer 3 is covered with a protective layer 4.
- S203 forming a pixel defining layer on the protective layer and the base substrate; the pixel defining layer encloses a pixel opening on the protective layer.
- a pixel defining layer 5 is formed on the protective layer 4 and the base substrate 2, wherein the pixel defining layer 5 forms an opening on the protective layer 4 by exposure and development technology, that is, the pixel opening 6.
- the protective layer 4 in the pixel opening 6 is etched so that the corresponding anode layer 3 is exposed.
- the anode layer 3 includes a transparent conductive film (ITO)
- the pixel defining layer 5 is composed of a photoresist material
- the pixel defining layer 5 includes a single-layer pixel defining layer 5, a double-layer pixel defining layer 5, a striped pixel defining layer 5, etc.
- a single-layer pixel layer is taken as an example.
- a protective layer 4 is first covered on the anode layer 3, so that in the process of forming the pixel opening 6, even if there are some residues or other foreign objects
- the particles enter the pixel opening 6 and can also be removed when the protective layer 4 is removed, ensuring that there are no other impurities on the anode layer 3 in the pixel opening 6 so that the organic functional layer 7 is printed on the anode layer 3 in the pixel opening 6
- the ink material 8 can be completely spread out, ensuring that the devices of the OLED display panel 1 emit light uniformly, without bright or dark spots, improving the display effect and performance of the OLED display panel 1, and extending the service life of the OLED display panel 1. .
- etching the protective layer 4 in the pixel opening 6 to expose the anode layer 3 includes:
- the protective layer 4 in the pixel opening 6 is removed by dry etching or wet etching to expose the anode layer 3.
- dry etching or wet etching can be selected to remove the protective layer 4 in the pixel opening 6 so that the anode layer 3 is exposed, and the exposed part of the anode layer 3 forms a light-emitting area 9.
- the protective layer 4 can also be removed by exposure according to the type of material.
- the thickness of the protective layer 4 is 1 to 200 nanometers, which can prevent the material of the pixel defining layer 5 from contacting the surface of the anode layer 3, and it will not cause excessive etching time when the protective layer 4 is removed due to being too thick.
- the length affects the surface of the pixel defining layer 5.
- the material of the anode layer 3 is a hydrophilic conductive material
- the material of the pixel defining layer 5 is a hydrophobic material
- the material of the protective layer 4 is a hydrophilic material.
- the printed ink material 8 is liquid and contains a large amount of moisture. Only when the anode layer 3 is a hydrophilic material, the ink material 8 can be completely spread out when printed on the surface of the anode layer 3.
- the ink is restricted in a single pixel opening 6 and is not connected to the ink material 8 in the adjacent pixel opening 6, and the material of the pixel defining layer 5 is a hydrophobic material.
- the protective layer 4 is made of a hydrophilic material, which can avoid the influence of the remaining protective layer 4 on the printing of the ink material 8 due to process reasons. Even if there is a part of the residual, it will not affect the spread of the ink material 8 on the anode layer 3.
- the protective layer 4 includes an organic thin film or an inorganic thin film, so that the material of the protective layer 4 can be selected in a wide range and the cost of the material is controllable.
- the organic film includes a hydrophilic photoresist material
- the inorganic film includes a silicon dioxide film or a silicon nitride film.
- the method further includes:
- An organic functional layer 7 is formed in the pixel opening 6.
- the organic functional layer 7 includes a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and the like.
- forming the organic functional layer 7 in the pixel opening 6 includes:
- the ink material 8 is dried to form an organic functional layer 7.
- the ink material 8 includes a solution material that can be printed corresponding to the organic functional layer 7, and the organic functional layer 7 is a film layer formed by the printed ink material 8 after a drying process.
- the embodiment of the present application also provides a method for manufacturing the OLED display panel 1.
- the difference from the above embodiment is that the protective layer 4 in the pixel opening 6 is etched to expose the anode layer 3. include:
- the protective layer 4 in the pixel opening 6 is patterned by dry etching or wet etching to expose the anode layer 3 with a predetermined shape.
- the exposed shape of the anode layer 3 includes a square, a circle (or an ellipse), a parallelogram, or a five-pointed star.
- the protective layer 4 Graphical processing of the protective layer 4 in the pixel opening 6, on the one hand, prevents the hydrophobic pixel defining layer 5 from remaining on the exposed anode layer 3, and improves the display effect of the OLED display panel 1; on the other hand, the protective layer 4 Graphical processing makes the exposed anode layer 3 present different preset patterns, as shown in Figs. 5-7. Of course, it is not limited to the several patterns listed in the figure, and it can also be other specific patterns, so that different patterns can be obtained.
- the shaped light-emitting area 9 can improve the viewing angle of the OLED display panel 1.
Abstract
本申请公开了一种OLED显示面板的制作方法,包括:提供衬底基板;在所述衬底基板上形成阳极层;在所述阳极层上覆盖保护层;在所述保护层和所述衬底基板上形成像素界定层;所述像素界定层在所述保护层上围成像素开口;对所述像素开口中的保护层进行刻蚀,以裸露所述阳极层。
Description
本申请涉及显示面板技术领域,尤其涉及一种OLED显示面板的制作方法。
这里的陈述仅提供与本申请有关的背景信息,而不必然地构成现有技术。
制备OLED(Organic Light Emitting Diode)器件的主要方法有蒸镀法和打印法两种,现在利用全蒸镀方法制备大中小尺寸的OLED显示器件的技术相对于打印技术来说已相当成熟,目前已经用于商业化生产,但全蒸镀技术存在材料利用率低,难用于制备高分辨率的器件的问题。而打印技术制备OLED器件的材料利用率高达90%以上,其制备OLED器件的成本较全蒸镀技术低17%左右,且打印过程中无需掩模板,可用于高分辨率OLED显示器件的制备。
打印技术的制程包括在ITO(Indium Tin Oxides,ITO,氧化铟锡,透明导电薄膜)阳极层图形化后制备像素界定层,形成像素开口,ITO的边缘部分与像素界定层重合。在打印过程中发现,ITO阳极层的表面有部分有机功能墨水材料铺展不开,且有些像素内有微米级的异物颗粒,造成干燥后的有机功能膜层出现边缘且异物处无有机功能膜覆盖,从而引起OLED器件在发光时,出现发光不均、亮点或暗点的mura(显示不均)问题,严重影响了OLED显示面板的显示效果及使用寿命。
综上所述,在OLED显示面板的制作过程中,在发光区的阳极层上打印有机功能层时存在有机功能墨水材料铺展不开导致形成的有机功能膜覆盖不完全,从而引起OLED显示面板的显示效果差及使用寿命短的问题。
本申请提供一种OLED显示面板的制作方法,通过先在阳极层上覆盖一层保护层,在形成像素界定层以及像素开口后去除阳极层上的保护层,解决了阳极层上打印有机功能膜时墨水材料铺展不开而影响OLED显示面板的显示效果及使用寿命的技术问题。
为解决上述问题,本申请提供的技术方案如下:
本申请提供一种OLED显示面板的制作方法,包括:
提供衬底基板;
在所述衬底基板上形成阳极层;
在所述阳极层上覆盖保护层;
在所述保护层和所述衬底基板上形成像素界定层;所述像素界定层在所述保护层上围成像素开口;以及
对所述像素开口中的保护层进行刻蚀,以裸露所述阳极层。
在本申请实施例提供的显示面板的制作方法中,所述对所述像素开口中的保护层进行刻蚀,以裸露所述阳极层,包括:
采用干法刻蚀或湿法刻蚀的方式去除所述像素开口中的保护层,以裸露所述阳极层。
在本申请实施例提供的显示面板的制作方法中,所述对所述像素开口中的保护层进行刻蚀,以裸露所述阳极层,包括:
采用干法刻蚀或湿法刻蚀的方式对所述像素开口中的保护层进行图形化处理,以裸露预设形状的阳极层。
在本申请实施例提供的显示面板的制作方法中,所述阳极层裸露的形状包括方形、圆形、平行四边形或五角星形。
在本申请实施例提供的显示面板的制作方法中,所述保护层的厚度为1至200纳米。
在本申请实施例提供的显示面板的制作方法中,所述阳极层的材料为亲水性的导电材料,所述像素界定层的材料为疏水性的材料,所述保护层的材料为亲水性的材料。
在本申请实施例提供的显示面板的制作方法中,所述保护层为有机物薄膜,所述有机物薄膜包括亲水性的光阻薄膜。
在本申请实施例提供的显示面板的制作方法中,所述保护层为无机物薄膜,所述无机物薄膜包括二氧化硅薄膜或氮化硅薄膜。
在本申请实施例提供的显示面板的制作方法中,所述阳极层包括透明导电薄膜。
在本申请实施例提供的显示面板的制作方法中,所述像素界定层的材料包括光阻材料,所述像素界定层包括单层像素界定层、双层像素界定层或条形像素界定层。
在本申请实施例提供的显示面板的制作方法中,在所述对所述像素开口中的保护层进行刻蚀,以裸露所述阳极层之后,还包括:
在所述像素开口中形成有机功能层。
在本申请实施例提供的显示面板的制作方法中,所述在所述像素开口中形成有机功能层,包括:
在所述像素开口中打印墨水材料;
将所述墨水材料干燥处理,形成有机功能层。
在本申请实施例提供的显示面板的制作方法中,所述有机功能层包括空穴注入层、空穴传输层、发光层、电子传输层以及电子注入层。
在本申请实施例提供的显示面板的制作方法中,所述墨水材料包括所述有机功能层对应的可以进行打印的溶液材料。
本申请的有益效果为:本实施例在形成像素界定层之前,在阳极层上先覆盖一层保护层,使得在形成像素开口的过程中,即使有部分像素界定层残留物或其他异物颗粒位于像素开口中,也可以在去除保护层时一并去除,保证了像素开口中的阳极层上没有其他杂质,使得在打印有机功能层的墨水材料时墨水材料可以在像素开口中的阳极层上完全铺展开,避免了OLED显示面板出现发光不均、亮点或暗点等问题,提高了OLED显示面板的显示效果及性能,延长了OLED显示面板的使用寿命。
为了更清楚地说明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单介绍,显而易见地,下面描述中的附图仅仅是申请的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为示例性的OLED显示面板的制作方法的流程示意图;
图2为本申请实施例提供的OLED显示面板的制作方法的流程示意框图;
图3为本申请实施例提供的一种OLED显示面板的制作方法的流程示意图;
图4为本申请实施例提供的另一种OLED显示面板的制作方法的流程示意图;
图5为本申请实施例提供的一种单个像素开口区域的俯视图;
图6为本申请实施例提供的另一种单个像素开口区域的俯视图;
图7为本申请实施例提供的另一种单个像素开口区域的俯视图。
这里所公开的具体结构和功能细节仅仅是代表性的,并且是用来描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现,并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本申请的描述中,需要理解的是,术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。此外,术语“第一”、“第二”仅用来描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中,除非另有说明,“多个”的含义是两个或两个以上。另外,术语“包括”及其任何变形,意图在于覆盖不排他的包含。
在本申请的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本申请中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指,否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是,这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在,而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
下面结合附图和实施例对本申请作进一步说明。
如图1所示,示例性的OLED显示面板1制作过程中,像素界定层5在阳极层3上围成像素开口6,像素开口6中的阳极层3上有部分像素界定层残留物10或有其他微米级的异物颗粒,使得在像素开口6中的阳极层3上打印有机功能层7的墨水材料8时部分墨水材料8铺展不开,造成干燥后形成的有机功能膜层出现边缘且有像素界定层残留物10或其他异物颗粒处的阳极层3上无有机功能膜覆盖,从而引起OLED显示面板1出现发光不均、亮点或暗点等显示不均问题。
如图2所示,本申请实施例提供了一种OLED显示面板1的制作方法,包括以下步骤:
S201:提供衬底基板;在衬底基板上形成阳极层。
如图3所示,在衬底基板2上形成阳极层3,具体的,先在衬底基板2上铺一整层阳极层3,再对阳极层3图形化处理,形成相互间隔设置的多个阳极层3图案。
S202:在阳极层上覆盖保护层。
如图3所示,在阳极层3上覆盖保护层4,具体的,现在衬底基板2和形成的阳极层3上覆盖一整层保护层4,再对保护层4图形化处理,使得只有阳极层3上覆盖有保护层4。
S203:在保护层和衬底基板上形成像素界定层;像素界定层在保护层上围成像素开口。
如图3所示,在保护层4和衬底基板2上形成像素界定层5,其中,像素界定层5通过曝光显影技术在保护层4上形成开口,即像素开口6。
S204:对像素开口中的保护层进行刻蚀,以裸露阳极层。
如图3所示,对像素开口6中的保护层4进行刻蚀,使得对应的阳极层3裸露出来。
具体的,阳极层3包括透明导电薄膜(ITO),像素界定层5由光阻材料组成,像素界定层5包括单层像素界定层5、双层像素界定层5、条形像素界定层5等,本实施例以单层像素层为例。
如图3所示,本实施例中,在形成像素界定层5之前,在阳极层3上先覆盖一层保护层4,使得在形成像素开口6的过程中,即使有部分残留物或其他异物颗粒进入像素开口6中,也可以在去除保护层4时一并去除,保证了像素开口6中的阳极层3上没有其他杂质,从而在像素开口6中的阳极层3上打印有机功能层7的墨水材料8时可以完全铺展开,保证了OLED显示面板1的器件发光时发光均匀、无亮点或暗点,提高了OLED显示面板1的显示效果及性能,延长了OLED显示面板1的使用寿命。
具体的,对像素开口6中的保护层4进行刻蚀,以裸露阳极层3,包括:
采用干法刻蚀或湿法刻蚀的方式去除像素开口6中的保护层4,以裸露阳极层3。
本实施例中,根据保护层4的材料类型不同,可以选用干法刻蚀或者湿法刻蚀去除像素开口6中的保护层4,使得阳极层3裸露出来,阳极层3裸露部分形成发光区9。当然保护层4根据材料的类型还可以采用曝光的方式去除。
在一实施例中,保护层4的厚度为1至200纳米,既可以阻挡像素界定层5的材料接触到阳极层3的表面,又不会因为太厚而导致保护层4去除时刻蚀时间过长对像素界定层5的表面造成影响。
在一实施例中,阳极层3的材料为亲水性的导电材料,像素界定层5的材料为疏水性的材料,保护层4的材料为亲水性的材料。
本实施例中,打印的墨水材料8为液体,含有大量的水分,只有阳极层3为亲水性的材料时,墨水材料8打印在阳极层3的表面才能完全铺展开,并且,为了将打印的墨水限制在单个像素开口6中而不与相邻的像素开口6中的墨水材料8相连,像素界定层5的材料为疏水性的材料。保护层4为亲水性的材料可以避免因工艺原因导致的保护层4残留对墨水材料8打印的影响,即使有部分残留,也不会影响墨水材料8在阳极层3上的铺展。
在一实施例中,保护层4包括有机物薄膜或无机物薄膜,使得保护层4的材料可选择的范围广,材料的成本可控。
具体的,有机物薄膜包括亲水性的光阻材料,无机物薄膜包括二氧化硅薄膜或氮化硅薄膜。
在一实施例中,如图3所示,在对像素开口6中的保护层4进行刻蚀,以裸露阳极层3之后,还包括:
在像素开口6中形成有机功能层7。
具体的,有机功能层7包括空穴注入层、空穴传输层、发光层、电子传输层、电子注入层等。
在一实施例中,在像素开口6中形成有机功能层7,包括:
在像素开口6中打印墨水材料8;
将墨水材料8干燥处理,形成有机功能层7。
具体的,墨水材料8包括有机功能层7对应的可以进行打印的溶液材料,有机功能层7是打印的墨水材料8经过干燥制程后形成的膜层。
如图4所示,本申请实施例还提供了一种OLED显示面板1的制作方法,与上述实施例不同的在于,对像素开口6中的保护层4进行刻蚀,以裸露阳极层3,包括:
采用干法刻蚀或湿法刻蚀的方式对像素开口6中的保护层4进行图形化处理,以裸露预设形状的阳极层3。
具体的,如图5至7所示,阳极层3裸露的形状包括方形、圆形(或椭圆形)、平行四边形或五角星形。
对像素开口6中的保护层4图形化处理,一方面,避免了裸露的阳极层3上残留疏水性的像素界定层5,提高了OLED显示面板1的显示效果;另一方面,保护层4图形化处理,使裸露出来的阳极层3呈现不同的预设图形,如图5至图7所示,当然不限于图中列举的几种图形,还可以为其他特定的图形,进而可以获得不同形状的发光区9,可改善OLED显示面板1的视角。另外,相比采用曝光显影技术对像素界定层5图形化处理形成不同形状的发光区9相比,采用干法刻蚀或湿法刻蚀对保护层4图形化,不需要光罩,可以节约生产成本。
综上所述,虽然本申请已以优选实施例揭露如上,但上述优选实施例并非用以限制本申请,本领域的普通技术人员,在不脱离本申请的精神和范围内,均可作各种更动与润饰,因此本申请的保护范围以权利要求界定的范围为准。
Claims (14)
- 一种OLED显示面板的制作方法,包括:提供衬底基板;在所述衬底基板上形成阳极层;在所述阳极层上覆盖保护层;在所述保护层和所述衬底基板上形成像素界定层;所述像素界定层在所述保护层上围成像素开口; 以及对所述像素开口中的保护层进行刻蚀,以裸露所述阳极层。
- 如权利要求1所述的OLED显示面板的制作方法,其中,所述对所述像素开口中的保护层进行刻蚀,以裸露所述阳极层,包括:采用干法刻蚀或湿法刻蚀的方式去除所述像素开口中的保护层,以裸露所述阳极层。
- 如权利要求1所述的OLED显示面板的制作方法,其中,所述对所述像素开口中的保护层进行刻蚀,以裸露所述阳极层,包括:采用干法刻蚀或湿法刻蚀的方式对所述像素开口中的保护层进行图形化处理,以裸露预设形状的阳极层。
- 如权利要求3所述的OLED显示面板的制作方法,其中,所述阳极层裸露的形状包括方形、圆形、平行四边形或五角星形。
- 如权利要求1所述的OLED显示面板的制作方法,其中,所述保护层的厚度为1至200纳米。
- 如权利要求1所述的OLED显示面板的制作方法,其中,所述阳极层的材料为亲水性的导电材料,所述像素界定层的材料为疏水性的材料,所述保护层的材料为亲水性的材料。
- 如权利要求6所述的OLED显示面板的制作方法,其中,所述保护层为有机物薄膜,所述有机物薄膜包括亲水性的光阻薄膜。
- 如权利要求6所述的OLED显示面板的制作方法,其中,所述保护层为无机物薄膜,所述无机物薄膜包括二氧化硅薄膜或氮化硅薄膜。
- 如权利要求6所述的OLED显示面板的制作方法,其中,所述阳极层包括透明导电薄膜。
- 如权利要求6所述的OLED显示面板的制作方法,其中,所述像素界定层的材料包括光阻材料,所述像素界定层包括单层像素界定层、双层像素界定层或条形像素界定层。
- 如权利要求1所述的OLED显示面板的制作方法,其中,在所述对所述像素开口中的保护层进行刻蚀,以裸露所述阳极层之后,还包括:在所述像素开口中形成有机功能层。
- 如权利要求11所述的OLED显示面板的制作方法,其中,所述在所述像素开口中形成有机功能层,包括:在所述像素开口中打印墨水材料;将所述墨水材料干燥处理,形成有机功能层。
- 如权利要求12所述的OLED显示面板的制作方法,其中,所述有机功能层包括空穴注入层、空穴传输层、发光层、电子传输层以及电子注入层。
- 如权利要求13所述的OLED显示面板的制作方法,其中,所述墨水材料包括所述有机功能层对应的可以进行打印的溶液材料。
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CN105470408B (zh) * | 2015-12-08 | 2017-05-31 | 深圳市华星光电技术有限公司 | 用于打印成膜工艺的凹槽结构及其制作方法 |
CN108832009A (zh) * | 2018-05-29 | 2018-11-16 | 深圳市华星光电半导体显示技术有限公司 | 一种喷墨打印amoled显示面板的制备方法 |
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2019
- 2019-01-22 CN CN201910060079.XA patent/CN109817826B/zh active Active
- 2019-03-21 WO PCT/CN2019/078976 patent/WO2020151073A1/zh active Application Filing
- 2019-03-21 US US16/339,384 patent/US20200303687A1/en not_active Abandoned
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CN102308671A (zh) * | 2009-02-10 | 2012-01-04 | 松下电器产业株式会社 | 发光元件的制造方法和发光元件、以及发光装置的制造方法和发光装置 |
CN104752490A (zh) * | 2015-04-16 | 2015-07-01 | 京东方科技集团股份有限公司 | 一种有机发光二极管显示面板及其制作方法、显示装置 |
CN107887423A (zh) * | 2017-11-14 | 2018-04-06 | 合肥鑫晟光电科技有限公司 | 一种显示面板、其制备方法及显示装置 |
CN109192886A (zh) * | 2018-09-05 | 2019-01-11 | 京东方科技集团股份有限公司 | 一种显示基板及其制作方法、显示面板及显示装置 |
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CN109817826B (zh) | 2020-09-01 |
US20200303687A1 (en) | 2020-09-24 |
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