WO2018196091A1 - 有源矩阵有机发光二极管面板及制作其的方法 - Google Patents

有源矩阵有机发光二极管面板及制作其的方法 Download PDF

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Publication number
WO2018196091A1
WO2018196091A1 PCT/CN2017/086535 CN2017086535W WO2018196091A1 WO 2018196091 A1 WO2018196091 A1 WO 2018196091A1 CN 2017086535 W CN2017086535 W CN 2017086535W WO 2018196091 A1 WO2018196091 A1 WO 2018196091A1
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layer
insulating layer
opaque
organic light
light emitting
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PCT/CN2017/086535
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English (en)
French (fr)
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李松杉
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武汉华星光电技术有限公司
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Priority to US15/541,785 priority Critical patent/US10804343B2/en
Publication of WO2018196091A1 publication Critical patent/WO2018196091A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/126—Shielding, e.g. light-blocking means over the TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an active matrix organic light emitting diode panel and a method of fabricating the same.
  • an electrode layer is deposited on the upper portion thereof and patterned to form a thin film.
  • the transistor has a first electrode layer that is electrically connected.
  • a Pixel Defined Layer is formed on the upper portion of the first electrode layer.
  • the obtained PDL layer 14 is a trapezoid having an upper bottom smaller than the lower bottom, and a pixel region 16 is disposed between the PDL layers, the surface 142 of the PDL layer 14 is hydrophobic, and the inclined surface 141 is hydrophilic. Since such a hydrophobic and hydrophilic condition is difficult to control, when the organic light-emitting ink (Ink) is printed to the pixel region 16, a problem of unevenness of the ink film thickness occurs near the PDL layer slope 141. As shown in FIG.
  • the ink film 15 between the two PDLs because the slope 141 of the PDL layer 14 is hydrophilic, causes the ink film 15 to form a film thickness unevenness region 151 near the slope 141, so that when current flows When the film thickness unevenness region 151 is passed, there is a problem that the luminance of the light is uneven.
  • the present invention proposes an active matrix organic light emitting diode panel for the problem that the ink film is uneven in luminance caused by uneven film thickness in the edge region, and a method for fabricating the same is proposed.
  • the active matrix organic light emitting diode panel of the present invention comprises, in order from bottom to top, a substrate substrate, a first electrode layer, and a pixel defining layer, wherein a pixel region is disposed between the pixel defining layers, An organic light emitting layer is disposed in the region, the organic light emitting layer facing the pixel defining layer a film thickness unevenness region is formed at a slope of the pixel region, wherein
  • the panel further includes an opaque insulating layer disposed at least partially between the first electrode layer and the pixel defining layer, the opaque insulating layer extending into the pixel region along a normal of the substrate substrate Observing the direction, a projection of the film thickness unevenness region on the opaque insulating layer is located inside the opaque insulating layer.
  • the projection of the film thickness unevenness on the opaque insulating layer is located inside the opaque insulating layer, so that the uneven brightness caused by the uneven film thickness can The opaque insulating layer is completely blocked, so that only the uniform brightness emitted by the uniform thickness of the organic light-emitting layer is transmitted through the substrate, thereby making the brightness of the pixel region uniform, and improving the brightness uniformity of the OLED display panel.
  • the opaque insulating layer includes a first insulating layer, an opaque layer, and a second insulating layer in this order from bottom to top.
  • the opaque layer can well block the uneven brightness emitted by the unevenness of the film thickness, and the first insulating layer and the second insulating layer respectively disposed at the upper and lower portions of the opaque layer can ensure good insulation between the opaque layer and other layers.
  • the opaque insulating layer has both opaque and insulating properties.
  • the material constituting the first insulating layer is silicon oxide or silicon nitride
  • the material constituting the second insulating layer is silicon oxide or silicon nitride.
  • the material constituting the opaque layer is a metal.
  • the metal is molybdenum or aluminum.
  • Silicon oxide, silicon nitride, molybdenum, and aluminum are commonly used materials in the display panel process, which not only facilitates the acquisition of these materials, but also reduces the manufacturing cost of the panel.
  • the material constituting the pixel defining layer is an organic photoresist material.
  • the organic photoresist material is acrylic plastic or polyimide.
  • the invention also proposes a method for fabricating an active matrix organic light emitting diode panel, wherein the method comprises the following steps:
  • the projection of the film thickness unevenness region on the opaque insulating layer is located inside the opaque insulating layer as viewed in the normal direction of the base substrate.
  • the first electrode layer is preferably an ITO electrode, and first a layer of ITO is deposited on the entire surface of the substrate. The film is then patterned by photolithographic techniques to form a first electrode layer. An opaque insulating film is deposited on the upper surface of the first electrode layer, and patterned by yellow light and etching to form an opaque insulating layer.
  • the coating of the organic photoresist is first performed, and then the pixel defining layer is obtained by exposure, development, and baking.
  • the specific process of fabricating the opaque insulating layer includes the following steps:
  • each layer of the opaque insulating layer is formed by chemical vapor deposition or physical vapor deposition.
  • the organic light-emitting layer is fabricated using an inkjet printing technique.
  • the active matrix organic light emitting diode panel proposed by the present invention is disposed on the opaque insulating layer by providing an opaque insulating layer and observing along the normal direction of the substrate substrate, and the projection of the film thickness unevenness on the opaque insulating layer is located inside the opaque insulating layer. Therefore, the uneven light-emitting brightness generated by the current flowing through the uneven film thickness can be completely blocked by the opaque insulating layer, so that only the uniform brightness emitted by the uniform film thickness of the organic light-emitting layer is transmitted through the substrate, thereby making the pixel region The brightness is uniform, and the brightness uniformity of the OLED display panel is improved.
  • the material constituting the opaque insulating layer is preferably a material commonly used in the panel manufacturing process, which further reduces the manufacturing cost. The method for fabricating an active matrix organic light emitting diode panel proposed by the present invention ensures the performance of the panel.
  • FIG. 1 is a schematic structural view of an active matrix organic light emitting diode panel in the prior art
  • FIG. 2 is a schematic structural view of an active matrix organic light emitting diode panel according to the present invention.
  • FIG. 3 is a schematic diagram of a method for fabricating an active matrix organic light emitting diode panel according to the present invention
  • step S11 is a schematic structural view of the AMOLED panel process after step S11;
  • step S12 is a schematic structural view of the AMOLED panel process after step S12;
  • FIG. 6 is a schematic structural view of the AMOLED panel process after step S13;
  • FIG. 7 is a schematic structural view of the AMOLED panel process after step S14.
  • Embodiment 1 is a diagrammatic representation of Embodiment 1:
  • FIG. 2 is a schematic structural view of an active matrix organic light emitting diode (AMOLED) panel in the present embodiment.
  • the panel includes a base substrate 21, a first electrode layer 22, and a pixel defining layer 24 in this order from bottom to top.
  • a pixel region 26 is disposed between the pixel defining layers 24, and an organic light emitting layer 25 is disposed in the pixel region 26. Since the slope 241 of the pixel defining layer 24 facing the pixel region 26 is hydrophilic, the organic light-emitting layer 25 is formed with a film thickness unevenness region 252 near the slope 241, and a film thickness uniform region 251 is formed away from the slope 241. .
  • the AMOLED panel in this embodiment further includes an opaque insulating layer 23 at least partially disposed between the first electrode layer 22 and the pixel defining layer 24, as shown in FIG. Further, the opaque insulating layer 23 projects into the pixel region 26, and the projection of the film thickness unevenness region 252 on the opaque insulating layer 23 is located inside the opaque insulating layer 23 as viewed in the normal direction of the base substrate 21.
  • the organic light-emitting layer 25 When an electric field is applied, the organic light-emitting layer 25 generates brightness. Since the film thickness at the film thickness unevenness region 252 is uneven, there is a phenomenon in which the luminance of the light is uneven, and conversely, the film thickness is uniform at the film thickness 251. The brightness is even.
  • the opaque insulating layer 23 in this embodiment has a function of shielding light. Since the projection of the film thickness unevenness region 252 on the opaque insulating layer 23 is located inside the opaque insulating layer 23, the opaque insulating layer 23 can cover the film thickness unevenness region. The uneven brightness generated at 252 is completely blocked, so that only the uniform brightness generated by the film thickness uniform region 251 is displayed through the light exiting side 20, thereby making the brightness of the pixel region 26 uniform, improving the brightness uniformity of the AMOLED panel.
  • the opaque insulating layer 23 in this embodiment includes a first insulating layer 231, an opaque layer 232, and a second insulating layer 233 which are disposed in this order from bottom to top.
  • the first insulating layer 231 and the second insulating layer 233 can ensure insulation between the opaque layer 232 and the adjacent layer, respectively, and the non-shielding layer 232 makes the opaque insulating layer 23 has good shading performance.
  • the material constituting the first insulating layer 231 and the second insulating layer 233 is silicon nitride or silicon oxide
  • the material constituting the opaque layer 232 is metal, preferably molybdenum or aluminum. These materials are commonly used in panel manufacturing processes to further reduce panel manufacturing costs.
  • each layer of the opaque insulating layer 23 may be other materials as long as the properties of the opaque insulating layer 23 are satisfied.
  • an opaque insulating layer 23, such as black chrome, black photoresist, or the like, is formed using a material from which a black matrix is formed.
  • the material constituting the pixel defining layer 24 is preferably an organic photoresist material such as acrylic plastic or polyimide.
  • Embodiment 2 is a diagrammatic representation of Embodiment 1:
  • FIG. 1 The method for fabricating an AMOLED panel proposed by the present invention is shown in FIG. The fabrication process of the AMOLED panel will be described in detail below with reference to FIG.
  • the first electrode layer 22 is formed on the entire surface of the base substrate 21 as shown in FIG.
  • the first electrode layer 22 is preferably an ITO electrode.
  • an ITO film is first deposited on the entire surface of the base substrate 21, and then patterned by photolithography to form the first electrode layer 22.
  • An opaque insulating layer 23 is formed, as shown in FIG.
  • An opaque insulating film is deposited on the upper surface of the first electrode layer 22, and patterned by yellow light and etching to form an opaque insulating layer 23.
  • the opaque insulating layer 23 includes a first insulating layer 231, an opaque layer 232, and a second insulating layer 233 in order from bottom to top.
  • a method of chemical vapor deposition or physical vapor deposition is employed.
  • the first insulating layer 231 is deposited, and then the opaque layer 232 and the second insulating layer 233 are sequentially deposited by the same method.
  • the opaque insulating layer 23 is obtained by a patterning process.
  • a pixel defining layer 24 is formed, as shown in FIG.
  • the material constituting the pixel defining layer 24 is preferably an organic photoresist material.
  • the organic photoresist material is first coated on the entire upper surface of the opaque insulating layer 23, and then the pixel defining layer 24 is obtained by exposure, development, and baking.
  • the pixel defining layer 24 fabricated in this manner has hydrophobic properties at its surface 242 and hydrophilic properties at the slope 241.
  • a pixel region 26 is disposed between the pixel defining layers 24, and the opaque insulating layer extends into the pixel region 26.
  • the organic light-emitting layer 25 is formed in the pixel region 26 as shown in FIG.
  • the organic light-emitting layer 25 is formed by an inkjet printing technique.
  • the organic light-emitting layer 25 is formed with a film thickness unevenness region 252 near the slope 241 of the pixel defining layer 24 facing the pixel region 26, which is observed along the normal direction of the substrate substrate 21, and the film thickness unevenness region 252 is in the opaque insulating layer 23.
  • the upper projection is located inside the opaque insulating layer 23.
  • the AMOLED panel fabricated by the method of the embodiment can ensure the performance and quality thereof, so that The brightness of the pixel area is uniform, which improves the brightness uniformity of the AMOLED panel.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种有源矩阵有机发光二极管面板，自下而上依次包括衬底基板（21）、第一电极层（22）、不透明绝缘层（23）和其间设置有像素区（26）的像素界定层（24），其中，不透明绝缘层（23）伸入设置有有机发光层（25）的像素区（26）内，有机发光层（25）在靠近像素界定层（24）的朝向像素区（26）的斜面（241）处形成有膜厚不均匀区（252），沿衬底基板（21）的法线方向观测，膜厚不均匀区（252）在不透明绝缘层（23）上的投影位于不透明绝缘层（23）的内部。这样的面板，膜厚不均匀区（252）导致的不均匀发光亮度能够被不透明绝缘层（23）完全遮挡，只有膜厚均匀区（251）发出的均匀的亮度透过衬底基板（21），使得像素区（26）的亮度均匀，提高了面板的亮度均一性。本发明提出的制作该面板的方法，能够保证该面板的性能，提高了产品品质。

Description

有源矩阵有机发光二极管面板及制作其的方法
相关申请的交叉引用
本申请要求享有于2017年4月27日提交的名称为“有源矩阵有机发光二极管面板及制作其的方法”的中国专利申请CN201710285922.5的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本发明涉及显示技术领域，具体涉及一种有源矩阵有机发光二极管面板及制作其的方法。
背景技术
在喷墨打印有源矩阵有机发光二极管(Active-matrix organic light emitting diode，AMOLED)面板的制作过程中，在制作完成薄膜晶体管器件后，会在其上部沉积电极层并进行构图工艺，形成与薄膜晶体管存在电性连接的第一电极层。然后，在第一电极层上部制作像素界定层(Pixel Defined Layer，PDL)。在制作PDL层时，首先进行有机光阻涂布，然后进行曝光、显影、烘烤得到PDL层，PDL层会出现表面疏水侧面亲水的状况。如图1所示，得到的PDL层14为上底小于下底的梯形，PDL层之间设置有像素区16，PDL层14的表面142疏水，而斜面141亲水。由于这种疏水和亲水的状况很难控制好，在将有机发光墨液(Ink)打印到像素区16时，会在靠近PDL层斜面141处出现墨液膜厚不均匀的问题。如图1所示，在两个PDL之间的墨液膜15，由于PDL层14的斜面141亲水，导致墨液膜15在靠近斜面141处形成膜厚不均匀区151，从而当电流流过膜厚不均匀区151时，出现发光亮度不均的问题。
发明内容
针对墨液膜在边缘区膜厚不均导致的发光亮度不均的问题，本发明提出了一种有源矩阵有机发光二极管面板，同时提出了制作其的方法。
本发明提出的有源矩阵有机发光二极管面板，自下而上依次包括衬底基板、第一电极层、像素界定层，其中，在所述像素界定层之间设置有像素区，在所述像素区内设置有有机发光层，所述有机发光层在靠近所述像素界定层的朝向所述 像素区的斜面处形成有膜厚不均匀区，其中，
所述面板还包括至少部分设置在所述第一电极层与所述像素界定层之间的不透明绝缘层，所述不透明绝缘层伸入所述像素区内，沿所述衬底基板的法线方向观测，所述膜厚不均匀区在所述不透明绝缘层上的投影位于所述不透明绝缘层的内部。
当电流流过膜厚不均匀区时，会出现发光亮度不均。通过设置不透明绝缘层，并使得沿衬底基板的法线方向观测，膜厚不均匀区在不透明绝缘层上的投影位于不透明绝缘层的内部，从而膜厚不均匀区导致的不均匀发光亮度能够被不透明绝缘层完全遮挡，因此只有有机发光层的膜厚均匀区发出的均匀的亮度透过衬底基板，从而使得像素区的亮度均匀，提高了有机发光二极管显示面板的亮度均一性。
作为对本发明的进一步改进，所述不透明绝缘层自下而上依次包括第一绝缘层、不透明层、第二绝缘层。
不透明层能够很好地遮挡膜厚不均匀区发出的不均匀亮度，在不透明层的上部和下部分别设置的第一绝缘层和第二绝缘层，能够保证不透明层与其他层之间的良好绝缘，从而使得不透明绝缘层同时具有了不透明和绝缘的性能。
作为对不透明绝缘层的进一步改进，构成所述第一绝缘层的材料为氧化硅或氮化硅，构成所述第二绝缘层的材料为氧化硅或氮化硅。构成所述不透明层的材料为金属。所述金属为钼或铝。
氧化硅、氮化硅、钼、铝皆为显示面板制程中常用的材料，不仅能够方便地获取这些材料，而且能够降低面板的制作成本。
作为对本发明的进一步改进，构成所述像素界定层的材料为有机光阻材料。所述有机光阻材料为丙烯酸塑料或聚酰亚胺。
本发明同时提出了制作有源矩阵有机发光二极管面板的方法，其中，所述方法包括如下步骤：
S11：在衬底基板的全表面制作第一电极层；
S12：制作不透明绝缘层；
S13：制作像素界定层，在所述像素界定层之间设置有像素区，所述不透明绝缘层至少部分设置于所述像素界定层的下部，并伸入所述像素区内；
S14：在所述像素区内制作有机发光层，所述有机发光层在靠近所述像素界定层的朝向所述像素区的斜面处形成有膜厚不均匀区，
沿所述衬底基板的法线方向观测，所述膜厚不均匀区在所述不透明绝缘层上的投影位于所述不透明绝缘层的内部。
其中的第一电极层优选为ITO电极，首先在衬底基板的全表面沉积一层ITO 膜，然后通过照相蚀刻技术进行构图，形成第一电极层。在第一电极层上表面沉积不透明绝缘膜，并利用黄光、蚀刻进行图形化，形成不透明绝缘层。在制作像素界定层时，首先进行有机光阻的涂布，然后通过曝光、显影、烘烤后得到该像素界定层。
作为对步骤S12的进一步改进，制作所述不透明绝缘层的具体过程包括以下步骤：
S121：制作第一绝缘层；
S122：制作不透明层；
S123：制作第二绝缘层。
进一步，采用化学气相沉积或物理气相沉积的方法制作所述不透明绝缘层的各层。
进一步，采用喷墨打印技术制作所述有机发光层。
总之，本发明提出的有源矩阵有机发光二极管面板，通过设置不透明绝缘层，并使得沿衬底基板的法线方向观测，膜厚不均匀区在不透明绝缘层上的投影位于不透明绝缘层的内部，从而使得电流流过膜厚不均匀区产生的不均匀发光亮度能够被不透明绝缘层完全遮挡，因此只有有机发光层的膜厚均匀区发出的均匀的亮度透过衬底基板，从而使得像素区的亮度均匀，提高了有机发光二极管显示面板的亮度均一性。且构成不透明绝缘层的材料优选为面板制程中常用的材料，进一步降低了制作成本。本发明提出的制作有源矩阵有机发光二极管面板的方法，保证了该面板的性能。
上述技术特征可以各种适合的方式组合或由等效的技术特征来替代，只要能够达到本发明的目的。
附图说明
在下文中将基于实施例并参考附图来对本发明进行更详细的描述。其中：
图1为现有技术中，有源矩阵有机发光二极管面板结构示意图；
图2为本发明提出的有源矩阵有机发光二极管面板结构示意图；
图3为本发明提出的制作有源矩阵有机发光二极管面板的方法示意图
图4为AMOLED面板制程中，步骤S11后的结构示意图；
图5为AMOLED面板制程中，步骤S12后的结构示意图；
图6为AMOLED面板制程中，步骤S13后的结构示意图；
图7为AMOLED面板制程中，步骤S14后的结构示意图。
在附图中，相同的部件使用相同的附图标记。附图并未按照实际的比例。
具体实施方式
结合附图和本发明具体实施方式的描述，能够更加清楚地了解本发明的细节。但是，在此描述的本发明的具体实施方式，仅用于解释本发明的目的，而不能以任何方式理解成是对本发明的限制。在本发明的教导下，技术人员可以构想基于本发明的任意可能的变形，这些都应被视为属于本发明的范围，下面将结合附图对本发明作进一步说明。
以下将结合附图对本发明的内容作出详细的说明，下文中的“上”“下”“左”“右”均为相对于图示方向，不应理解为对本发明的限制。
实施例一：
图2所示为本实施例中的有源矩阵有机发光二极管(AMOLED)面板的结构示意图。从图2中可以看出，该面板自下而上依次包括衬底基板21、第一电极层22和像素界定层24。其中，在像素界定层24之间设置有像素区26，并且在像素区26中设置有有机发光层25。由于像素界定层24的朝向像素区26的斜面241具有亲水性，所以有机发光层25在靠近斜面241处形成有膜厚不均匀区252，同时在远离斜面241处形成有膜厚均匀区251。
与现有技术不同的是，本实施例中AMOLED面板还包括至少部分设置在第一电极层22与像素界定层24之间的不透明绝缘层23，如图2所示。而且，不透明绝缘层23伸入像素区26内，沿衬底基板21的法线方向观测，膜厚不均匀区252在不透明绝缘层23上的投影位于不透明绝缘层23的内部。
当施加电场后，有机发光层25会产生亮度，由于膜厚不均匀区252处的膜厚不均，所以，此处会出现发光亮度不均的现象，相反，在膜厚均匀区251处发光亮度均匀。本实施例中的不透明绝缘层23具有遮光的作用，由于膜厚不均匀区252在不透明绝缘层23上的投影位于不透明绝缘层23的内部，因此，不透明绝缘层23能够将膜厚不均匀区252处产生的不均匀亮度完全遮挡，从而只有膜厚均匀区251产生的均匀亮度通过出光侧20进行显示，从而使得像素区26的亮度均匀，提高了AMOLED面板的亮度均一性。
优选地，本实施例中的不透明绝缘层23包括自下而上依次设置的第一绝缘层231、不透明层232和第二绝缘层233。第一绝缘层231和第二绝缘层233能够保证不透明层232分别与相邻层之间的绝缘，不遮光层232使得不透明绝缘层 23具有良好的遮光性能。优选地，构成第一绝缘层231和第二绝缘层233的材料为氮化硅或氧化硅，构成不透明层232的材料为金属，优选为钼或铝。这些材料均为面板制程中常用的材料，能够进一步降低面板的制造成本。当然，构成不透明绝缘层23各层的材料还可以为其他材料，只要能满足不透明绝缘层23的性能即可。在本发明的另一个实施例中，采用制作黑色矩阵的材料制作不透明绝缘层23，如黑铬、黑色光刻胶等。
构成像素界定层24的材料优选为有机光阻材料，如丙烯酸塑料或聚酰亚胺。
实施例二：
本发明提出的制作AMOLED面板的方法如图3所示。下面将结合附图3详细描述AMOLED面板的制作过程。
S11：在衬底基板21的全表面制作第一电极层22，如图4所示。第一电极层22优选为ITO电极。制作时，首先在衬底基板21的全表面沉积一层ITO膜，然后通过照相蚀刻技术进行构图，形成第一电极层22。
S12：制作不透明绝缘层23，如图5所示。在第一电极层22上表面沉积一层不透明绝缘膜，并利用黄光、蚀刻进行图形化，形成不透明绝缘层23。优选地，不透明绝缘层23自下而上依次包括第一绝缘层231、不透明层232和第二绝缘层233，这样，在制作不透明绝缘层23时，首先采用化学气相沉积或物理气相沉积的方法沉积第一绝缘层231，然后再采用同样的方法依次沉积不透明层232和第二绝缘层233，最后，通过构图工艺，获得不透明绝缘层23。
S13：制作像素界定层24，如图6所示。构成像素界定层24的材料优选为有机光阻材料。在制作像素界定层24时，首先在不透明绝缘层23的上部全表面涂布有机光阻材料，然后通过曝光、显影、烘烤后得到像素界定层24。采用此种方法制作出的像素界定层24，在其表面242处具有疏水性质，而在斜面241处具有亲水性质。
像素界定层24之间设置有像素区26，不透明绝缘层伸入像素区26内。
S14：在像素区26内制作有机发光层25，如图7所示。在本实施例中，采用喷墨打印技术制作有机发光层25。有机发光层25在靠近像素界定层24的朝向像素区26的斜面241处形成有膜厚不均匀区252，沿衬底基板21的法线方向观测，膜厚不均匀区252在不透明绝缘层23上的投影位于不透明绝缘层23的内部。
采用本实施例的方法制作的AMOLED面板，能够保证其性能和质量，使得 像素区的亮度均匀，提高了AMOLED面板的亮度均一性。
最后说明的是，以上实施例仅用于说明本发明的技术方案而非限制，尽管参照较佳实施例对本发明进行了详细说明，本领域的普通技术人员应当理解，可以对本发明的技术方案进行修改或者等同替换。尤其是，只要不存在结构上的冲突，各实施例中的特征均可相互结合起来，所形成的组合式特征仍属于本发明的范围内。只要不脱离本发明技术方案的宗旨和范围，其均应涵盖在本发明的权利要求范围当中。

Claims (14)

  1. 一种有源矩阵有机发光二极管面板，自下而上依次包括衬底基板、第一电极层、像素界定层，其中，
    在所述像素界定层之间设置有像素区，在所述像素区内设置有有机发光层，所述有机发光层在靠近所述像素界定层的朝向所述像素区的斜面处形成有膜厚不均匀区，其中，
    所述面板还包括至少部分设置在所述第一电极层与所述像素界定层之间的不透明绝缘层，所述不透明绝缘层伸入所述像素区内，
    沿所述衬底基板的法线方向观测，所述膜厚不均匀区在所述不透明绝缘层上的投影位于所述不透明绝缘层的内部。
  2. 根据权利要求1所述的面板，其中，构成所述像素界定层的材料为有机光阻材料。
  3. 根据权利要求1所述的面板，其中，所述不透明绝缘层自下而上依次包括第一绝缘层、不透明层、第二绝缘层。
  4. 根据权利要求3所述的面板，其中，构成所述第一绝缘层的材料包括氧化硅或氮化硅，构成所述第二绝缘层的材料包括氧化硅或氮化硅。
  5. 根据权利要求3所述的面板，其中，构成所述不透明层的材料包括金属。
  6. 根据权利要求5所述的面板，其中，所述金属为钼或铝。
  7. 根据权利要求4所述的面板，其中，构成所述像素界定层的材料为有机光阻材料。
  8. 根据权利要求2所述的面板，其中，所述不透明绝缘层自下而上依次包括第一绝缘层、不透明层、第二绝缘层。
  9. 一种制作有源矩阵有机发光二极管面板的方法，其中，所述方法包括如下步骤：
    S11：在衬底基板的全表面制作第一电极层；
    S12：制作不透明绝缘层；
    S13：制作像素界定层，在所述像素界定层之间设置有像素区，所述不透明绝缘层至少部分设置于所述像素界定层的下部，并伸入所述像素区内；
    S14：在所述像素区内制作有机发光层，所述有机发光层在靠近所述像素界 定层的朝向所述像素区的斜面处形成有膜厚不均匀区，
    沿所述衬底基板的法线方向观测，所述膜厚不均匀区在所述不透明绝缘层上的投影位于所述不透明绝缘层的内部。
  10. 根据权利要求9所述的方法，其中，制作所述不透明绝缘层的具体过程包括以下步骤：
    S121：制作第一绝缘层；
    S122：制作不透明层；
    S123：制作第二绝缘层。
  11. 根据权利要求9所述的方法，其中，采用喷墨打印技术制作所述有机发光层。
  12. 根据权利要求10所述的方法，其中，采用化学气相沉积或物理气相沉积的方法制作所述不透明绝缘层的各层。
  13. 根据权利要求10所述的方法，其中，采用喷墨打印技术制作所述有机发光层。
  14. 根据权利要求12所述的方法，其中，采用喷墨打印技术制作所述有机发光层。
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