WO2016159393A1 - セラミック基板、積層体およびsawデバイス - Google Patents
セラミック基板、積層体およびsawデバイス Download PDFInfo
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- WO2016159393A1 WO2016159393A1 PCT/JP2016/062959 JP2016062959W WO2016159393A1 WO 2016159393 A1 WO2016159393 A1 WO 2016159393A1 JP 2016062959 W JP2016062959 W JP 2016062959W WO 2016159393 A1 WO2016159393 A1 WO 2016159393A1
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- 239000000758 substrate Substances 0.000 title claims abstract description 171
- 239000000919 ceramic Substances 0.000 title claims abstract description 62
- 239000000463 material Substances 0.000 claims description 14
- 229910052596 spinel Inorganic materials 0.000 claims description 12
- 239000011029 spinel Substances 0.000 claims description 12
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000005411 Van der Waals force Methods 0.000 claims description 8
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052863 mullite Inorganic materials 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910052878 cordierite Inorganic materials 0.000 claims description 4
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000395 magnesium oxide Substances 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000000292 calcium oxide Substances 0.000 claims description 3
- 235000012255 calcium oxide Nutrition 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 23
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000005498 polishing Methods 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 13
- 230000003746 surface roughness Effects 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000010432 diamond Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Definitions
- the present invention relates to a ceramic substrate, a laminate, and a SAW device, and more particularly to a ceramic substrate suitable for supporting a piezoelectric substrate, a laminate including a piezoelectric substrate and a ceramic substrate, and a SAW device including the laminate. It is.
- a SAW device Surface Acoustic Wave Device
- the SAW device has a function of taking out only an electric signal having a desired frequency from among inputted electric signals.
- the SAW device has a structure in which electrodes are formed on a piezoelectric substrate.
- the piezoelectric substrate is disposed on a base substrate made of a material with high heat dissipation.
- a substrate made of single crystal sapphire As the base substrate, for example, a substrate made of single crystal sapphire can be adopted.
- a substrate made of single crystal sapphire is employed as the base substrate, there is a problem that the manufacturing cost of the SAW device increases.
- a ceramic substrate made of polycrystalline spinel is used as a base substrate, and a piezoelectric substrate and a ceramic substrate with reduced surface roughness Ra (arithmetic mean roughness) are combined by van der Waals force.
- SAW devices have been proposed. Thereby, the manufacturing cost of a SAW device can be suppressed (for example, refer patent document 1).
- the ceramic substrate according to the present disclosure is a ceramic substrate made of polycrystalline ceramic and having a main support surface.
- the support main surface has a roughness Sa of 0.01 nm to 3.0 nm.
- the number of irregularities of 1 nm or more in a square region having a side of 50 ⁇ m on average is less than 5, and the number of irregularities of 2 nm or more is less than 1 on average.
- the ceramic substrate it is possible to provide a ceramic substrate that can be bonded to the piezoelectric substrate with a sufficient bonding force.
- the ceramic substrate of the present application is a ceramic substrate made of polycrystalline ceramic and having a main support surface.
- the support main surface has a roughness Sa of 0.01 nm to 3.0 nm.
- the number of irregularities of 1 nm or more in a square region having a side of 50 ⁇ m on average is less than 5, and the number of irregularities of 2 nm or more is less than 1 on average.
- the inventors of the present invention cause a case where the bonding force becomes insufficient when the piezoelectric substrate and the ceramic substrate (base substrate) having a reduced arithmetic average roughness of the surface are bonded by van der Waals force.
- the bonding force is insufficient. That is, in order to obtain a sufficient bonding force, not only the roughness is sufficiently reduced in terms of arithmetic average roughness (in terms of average roughness), but also the large unevenness that is rarely present as described above. Need to be reduced.
- the ceramic substrate of the present application when the roughness of the main support surface is 0.01 nm to 3.0 nm in Sa, the surface roughness from the viewpoint of arithmetic average roughness is sufficiently reduced. Furthermore, in the ceramic substrate of the present application, the number of irregularities of 1 nm or more in the square region of 50 ⁇ m on one side of the main support surface is less than 5 on average and the number of irregularities of 2 nm or more is less than 1 on average. That is, in the ceramic substrate of the present application, not only the roughness of the support main surface is sufficiently reduced from the viewpoint of arithmetic average roughness, but also large irregularities that rarely exist on the support main surface are reduced. As a result, according to the ceramic substrate of the present application, it is possible to provide a ceramic substrate that can be bonded to the piezoelectric substrate with a sufficient bonding force.
- the main support surface may have a roughness of Sq of 0.5 nm or less. By doing so, a sufficient bonding force with the piezoelectric substrate is more reliably ensured.
- the ceramic substrate includes spinel (MgAl 2 O 4 ), alumina (Al 2 O 3 ), magnesia (MgO), silica (SiO 2 ), mullite (3Al 2 O 3 .2SiO 2 ), cordierite (2MgO ⁇ 2Al 2).
- One or more materials selected from the group consisting of O 3 ⁇ 5SiO 2 ), calcia (CaO), titania (TiO 2 ), silicon nitride (Si 3 N 4 ), aluminum nitride (AlN), and silicon carbide (SiC) You may be comprised with the polycrystalline ceramic which consists of. These materials are suitable as materials constituting the ceramic substrate of the present application.
- the laminate of the present application includes the ceramic substrate and a piezoelectric substrate that is disposed on the main support surface and is made of a piezoelectric material.
- the ceramic substrate and the piezoelectric substrate are bonded together by van der Waals force.
- the laminated body of the present application not only the roughness of the support main surface is sufficiently reduced in terms of arithmetic average roughness, but also the ceramic substrate and piezoelectric element in which large irregularities that are rarely present on the support main surface are reduced.
- the body substrate is coupled to the body substrate by van der Waals force. Therefore, according to the laminate of the present application, it is possible to provide a laminate in which the piezoelectric substrate and the ceramic substrate are bonded with a sufficient bonding force.
- the bonding strength between the ceramic substrate and the piezoelectric substrate may be 0.5 J / m 2 or more. By doing so, the piezoelectric substrate and the ceramic substrate are more reliably coupled.
- the bonding force between the piezoelectric substrate and the ceramic substrate is less than 0.5 J / m 2 , the substrate may be peeled off or applied in the electrode forming process or the chip forming process performed in the manufacture of the SAW device.
- the bonding strength between the ceramic substrate and the piezoelectric substrate is 1.0 J / m 2 or more, 1.3 J / m 2 or more, Furthermore, it is more preferable that it is 1.5 J / m 2 or more.
- the SAW device of the present application includes the laminate of the present application and an electrode formed on the main surface of the piezoelectric substrate opposite to the ceramic substrate.
- the SAW device of the present application includes the laminate of the present application in which a piezoelectric substrate and a ceramic substrate made of polycrystalline ceramic are bonded with a sufficient bonding force. Therefore, it is possible to provide a SAW device in which the piezoelectric substrate and the ceramic substrate are bonded with a sufficient bonding force while suppressing the manufacturing cost.
- roughness Sa, Sq, and Sz mean arithmetic mean height Sa, root mean square height Sq, and maximum height Sz based on ISO25178, respectively.
- surface roughness parameters can be measured using, for example, a three-dimensional surface roughness measuring instrument.
- laminated body 1 in the present embodiment includes a base substrate 10 and a piezoelectric substrate 20 as ceramic substrates.
- the piezoelectric substrate 20 is made of a piezoelectric material such as lithium tantalate (LiTaO 3 ) or lithium niobate (LiNbO 3 ).
- the base substrate 10 is made of one or more materials selected from the group consisting of spinel, alumina, magnesia, silica, mullite, cordierite, calcia, titania, silicon nitride, aluminum nitride and silicon carbide, preferably any one material. Made of polycrystalline ceramic.
- the base substrate 10 has a support main surface 11.
- the piezoelectric substrate 20 has an exposed main surface 21 that is one main surface and a coupling main surface 22 that is a main surface opposite to the exposed main surface 21.
- the piezoelectric substrate 20 is disposed so as to be in contact with the support main surface 11 of the base substrate 10 at the coupling main surface 22.
- the base substrate 10 and the piezoelectric substrate 20 are coupled by van der Waals force.
- the support main surface 11 of the base substrate 10 has a roughness Sa of 0.01 nm to 3.0 nm. Further, in the main support surface 11, the number of irregularities of 1 nm or more in a square region having a side of 50 ⁇ m on average is less than 5, and the number of irregularities of 2 nm or more is less than 1 on average.
- the roughness of the support main surface 11 is set to 0.01 nm to 3.0 nm in Sa, so that the surface roughness from the viewpoint of arithmetic average roughness is sufficiently reduced. Furthermore, in the laminated body 1, the unevenness
- the unevenness of 1 nm or more is an unevenness in which the average surface (average height) is calculated in the measurement region (a square region having a side of 50 ⁇ m) and the distance from the average surface to the apex (or the bottom) is 1 nm or more.
- the unevenness of 2 nm or more is an unevenness in which the average surface (average height) is calculated in the measurement region (a square region having a side of 50 ⁇ m), and the distance from the average surface to the apex (or the bottom) is 2 nm or more.
- the number of irregularities is counted with a microscope or the like in a plurality of measurement regions (a square region having a side of 50 ⁇ m) on the main support surface 11, and the average value is taken as the average number of irregularities.
- the roughness of the support main surface is preferably 2.0 nm or less, preferably 1.0 nm or less, in Sa. Is more preferable. Further, the unevenness of 1 nm or more in the square region having a side of 50 ⁇ m on one side of the support main surface 11 is preferably less than 4 on average, more preferably less than 3, and further preferably less than 2. .
- the support main surface 11 preferably has a roughness Sq of 0.5 nm or less. Thereby, sufficient coupling force between the piezoelectric substrate 20 and the base substrate 10 is ensured more reliably.
- the bonding strength between the base substrate 10 and the piezoelectric substrate 20 is preferably 0.5 J / m 2 or more. Thereby, the piezoelectric substrate 20 and the base substrate 10 are more reliably coupled.
- a base substrate preparation step is first performed as a step (S ⁇ b> 10).
- this step (S10) referring to FIG. 3, one or more materials selected from the group consisting of spinel, alumina, magnesia, silica, mullite, cordierite, calcia, titania, silicon nitride, aluminum nitride and silicon carbide
- a base substrate 10 made of a polycrystalline ceramic is prepared.
- a base substrate 10 made of a polycrystalline ceramic composed of any one material selected from the above group is prepared.
- a magnesia powder and an alumina powder are mixed to prepare a raw material powder, and a molded body is manufactured by molding.
- the molded body can be manufactured by performing CIP (Cold Isostatic Press) after preforming, for example, by press molding.
- CIP Cold Isostatic Press
- a sintering process is implemented with respect to a molded object.
- the sintering treatment can be performed by a method such as vacuum sintering or HIP (Hot Isostatic Press). Thereby, a sintered compact is obtained.
- the base substrate 10 having a desired shape (thickness) is obtained by performing dicing on the sintered body (see FIG. 3).
- a first polishing step is performed as a step (S20).
- step (S20) referring to FIG. 3, rough polishing is performed on support main surface 11 of base substrate 10 prepared in step (S10). Specifically, for example, rough grinding is performed on the main support surface 11 using a GC (Green Silicon Carbide) grindstone whose abrasive grain number is # 800 to # 2000.
- GC Green Silicon Carbide
- a second polishing step is performed as a step (S30).
- this step (S30) normal polishing is performed on the main support surface 11 on which rough polishing has been performed in step (S20).
- the support main surface 11 is usually polished using a diamond grindstone having an abrasive grain diameter of 3 to 5 ⁇ m.
- a third polishing step is performed as a step (S40).
- final polishing is performed on the main support surface 11 that has been normally polished in step (S30).
- finish polishing is performed on support main surface 11 using, for example, diamond abrasive grains having a particle size of 0.5 to 1.0 ⁇ m.
- the roughness of the support main surface 11 of 0.01 nm or more and 3.0 nm or less can be achieved by Sa.
- scratches due to diamond abrasive grains are generated on the main support surface 11. Therefore, although the roughness of 0.01 nm or more and 3.0 nm or less is achieved by Sa in the support main surface 11, there are large irregularities due to scratches.
- a fourth polishing step is performed as a step (S50).
- scratch scratch removal polishing is performed on the main support surface 11 that has been subjected to final polishing in step (S40).
- a slight polishing amount of CMP is performed on the support main surface 11.
- the amount of polishing by CMP is about several hundred nm.
- a bonding step is performed as a step (S60).
- the base substrate 10 having the main support surface 11 polished in steps (S20) to (S50) and the separately prepared piezoelectric substrate 20 are bonded together.
- a piezoelectric substrate 20 made of a piezoelectric material such as lithium tantalate or lithium niobate is prepared, and the bonding main surface 22 of the piezoelectric substrate 20 and the base substrate 10 are The base substrate 10 and the piezoelectric substrate 20 are bonded together so that the main support surface 11 is in contact.
- the base substrate 10 and the piezoelectric substrate 20 are coupled by van der Waals force.
- the laminated body 1 of this Embodiment is obtained.
- the laminate 1 in which the piezoelectric substrate 20 and the base substrate 10 are bonded with a sufficient bonding force is manufactured.
- a thickness reduction process is implemented as process (S70) following process (S60).
- process (S70) referring to FIG. 1 and FIG. 4, a process for reducing the thickness of piezoelectric substrate 20 of laminate 1 obtained in step (S60) is performed. Specifically, for example, a grinding process is performed on the exposed main surface 21 of the piezoelectric substrate 20. Thereby, the thickness of the piezoelectric substrate 20 is reduced to a thickness suitable for the SAW device.
- an electrode forming step is performed as a step (S80).
- this step (S80) referring to FIGS. 4 to 6, comb-shaped electrodes are formed on the exposed main surface 21 of the piezoelectric substrate 20.
- FIG. 5 is a sectional view taken along line VV in FIG.
- a conductor film made of a conductor such as Al is formed on exposed main surface 21 of piezoelectric substrate 20 that has been adjusted to an appropriate thickness in step (S70). It is formed.
- the conductor film can be formed, for example, by sputtering.
- a chip forming process is performed as a process (S90).
- the laminated body 1 in which a plurality of pairs of the input side electrode 30 and the output side electrode 40 are formed is cut in the thickness direction, whereby a pair of the input side electrode 30 and the output side electrode A plurality of chips including 40 are separated.
- input side wiring 51 and output side wiring 61 are formed on the chip manufactured in step (S90), so that SAW device 100 (SAW device 100) according to the first embodiment is formed. Filter) is completed.
- SAW device 100 includes laminated body 1 including base substrate 10 and piezoelectric substrate 20 bonded by van der Waals force, and exposed main surface 21 of piezoelectric substrate 20.
- the input side electrode 30 and the output side electrode 40 which are electrodes having a pair of comb teeth formed so as to be in contact with each other, the input side wiring 51 connected to the input side electrode 30, and the output side electrode 40
- the output side wiring 61 connected is provided.
- the input side electrode 30 includes a first portion 31 and a second portion 32.
- the first portion 31 includes a linear base portion 31A and a plurality of linear protruding portions 31B protruding from the base portion 31A in a direction perpendicular to the extending direction of the base portion 31A.
- the second portion 32 protrudes from the base portion 32A in a direction perpendicular to the extending direction of the base portion 32A, and enters between the adjacent protruding portions 31B.
- the linear base portion 32A extends in parallel with the base portion 31A.
- a plurality of linear protrusions 32B are arranged at a predetermined fixed interval.
- the output side electrode 40 includes a first portion 41 and a second portion 42.
- the first portion 41 includes a linear base portion 41A and a plurality of linear protrusion portions 41B protruding from the base portion 41A in a direction perpendicular to the extending direction of the base portion 41A.
- the second portion 42 protrudes from the base portion 42A in a direction perpendicular to the extending direction of the base portion 42A, and enters between the adjacent protruding portions 41B.
- the linear base portion 42A extends in parallel with the base portion 41A. And a plurality of linear protrusions 42B.
- the protrusion 41B and the protrusion 42B are arranged at a predetermined constant interval.
- the input side electrode 30 and the output side electrode 40 have a comb-teeth shape as shown in FIG. 1, and the interval between the protruding portion 31B and the protruding portion 32B and the interval between the protruding portion 41B and the protruding portion 42B. Is constant.
- the region where the electrode is formed on the exposed main surface 21 of the piezoelectric substrate 20 exists at a predetermined cycle (electrode cycle). Therefore, the surface acoustic wave generated by the input signal is most strongly excited when the wavelength matches the electrode period, and attenuates as the deviation from the electrode period increases. As a result, only a signal having a wavelength close to the electrode period is output via the output side electrode 40 and the output side wiring 61.
- the temperature of the piezoelectric substrate 20 rises.
- the base substrate 10 made of a material with high heat dissipation is disposed in contact with the piezoelectric substrate 20. Therefore, the SAW device 100 has high reliability. Furthermore, in the SAW device 100 of the present embodiment, the piezoelectric substrate 20 and the base substrate 10 are bonded with a sufficient bonding force. Therefore, the SAW device 100 is a highly reliable device.
- a base substrate 10 made of polycrystalline spinel was prepared, and a SAW device was fabricated in the same procedure as in the above embodiment. (Examples A, B and C).
- a base substrate 10 made of polycrystalline alumina and a base substrate 10 made of polycrystalline mullite were prepared as the base substrate 10, and SAW devices were produced in the same manner (Examples D and E).
- a base substrate made of polycrystalline spinel was prepared, and in the same procedure, the step (S50) was omitted (Comparative Examples A to F), and a base substrate made of polycrystalline alumina was prepared.
- Table 1 shows the experimental results of the examples when the base substrate made of polycrystalline spinel is adopted
- Table 2 shows the experimental results of the comparative examples
- Table 3 shows the experimental results of Examples and Comparative Examples when a base substrate made of polycrystalline mullite was employed.
- Tables 1 to 4 regarding the lowest stage, “good” is obtained when the electrode forming process and the chip forming process can be performed satisfactorily, and “bad” when the laminate is peeled off in the process. Is displayed.
- the roughness of the support main surface of the base substrate made of polycrystalline spinel is 0.01 nm or more and 3.0 nm or less in Sa, and the support main surface has an unevenness of 1 nm or more in a square region having a side of 50 ⁇ m.
- Examples A to C in which the average is less than 5 and the unevenness of 2 nm or more is less than 1 on average, a bonding strength of 0.5 J / m 2 or more is obtained and the entire main surface is covered. Good bonding is obtained.
- Comparative Examples A to F although the roughness of the main support surface of the base substrate is 0.01 nm or more and 3.0 nm or less in Sa, the bonding strength is small and the bonding state is good. Is not obtained. This is because, in Comparative Examples A to F, the average irregularity of 1 nm or more in a square region having a side of 50 ⁇ m was 5 or more on average, and in Comparative Examples A, D, E, and F, in a square region having a side of 50 ⁇ m. It is considered that the reason is that there were 1 or more irregularities of 2 nm or more on average.
- the roughness of the main support surface of the base substrate made of polycrystalline alumina is 0.01 nm to 3.0 nm in Sa, and the support main surface has a roughness of 1 nm or more in a square region having a side of 50 ⁇ m. less than five irregularities on average, and for example D 2 nm or more irregularities is less than one on average, 0.5 J / m 2 or more bonding strength is obtained, and the entire surface of the main surface Good bonding is obtained.
- Comparative Examples G and H although the roughness of the support main surface of the base substrate is 0.01 nm or more and 3.0 nm or less in Sa, the bonding strength is small and a good bonding state is not obtained.
- the roughness of the support main surface of the base substrate made of polycrystalline mullite is 0.01 nm or more and 3.0 nm or less in Sa, and 1 nm or more in a square region having a side of 50 ⁇ m on the support main surface. less than five irregularities on average, and for example E 2 nm or more irregularities is less than one on average, 0.5 J / m 2 or more bonding strength is obtained, and the entire surface of the main surface Good bonding is obtained.
- Comparative Examples I and J although the roughness of the main support surface of the base substrate is 0.01 nm or more and 3.0 nm or less in Sa, the bonding strength is small and a good bonding state is not obtained.
- Comparative Examples I and J had an average of 5 or more irregularities of 1 nm or more in a square region with a side of 50 ⁇ m. Is considered to be caused by an average of 1 or more irregularities of 2 nm or more.
- the laminate of the present application not only the roughness of the main support surface is sufficiently reduced in terms of arithmetic average roughness, but also the large unevenness that rarely exists on the main support surface is reduced. For example, it is confirmed that a laminated body in which the piezoelectric substrate and the base substrate are bonded with a sufficient bonding force can be obtained.
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Abstract
Description
SAWデバイスの製造コストをさらに低減するために、圧電体基板とセラミック基板との結合力を一層増大させることが求められている。そこで、圧電体基板と十分な結合力で結合することが可能なセラミック基板、圧電体基板とセラミック基板とが十分な結合力で結合した積層体、および当該積層体を含むSAWデバイスを提供することを目的の1つとする。
上記セラミック基板によれば、圧電体基板と十分な結合力で結合することが可能なセラミック基板を提供することができる。
最初に本願発明の実施態様を列記して説明する。本願のセラミック基板は、多結晶セラミックから構成され、支持主面を有するセラミック基板である。支持主面は、粗さがSaで0.01nm以上3.0nm以下である。支持主面において、一辺50μmの正方形領域における1nm以上の凹凸が平均で5個未満、かつ2nm以上の凹凸が平均で1個未満である。
次に、本発明にかかるセラミック基板および積層体の一実施の形態を、以下に図面を参照しつつ説明する。なお、以下の図面において同一または相当する部分には同一の参照番号を付しその説明は繰返さない。
10 ベース基板
100 SAWデバイス
11 支持主面
20 圧電体基板
21 露出主面
22 結合主面
30 入力側電極
31 第1部分
31A ベース部
31B 突出部
32 第2部分
32A ベース部
32B 突出部
40 出力側電極
41 第1部分
41A ベース部
41B 突出部
42 第2部分
42A ベース部
42B 突出部
51 入力側配線
61 出力側配線
Claims (6)
- 多結晶セラミックから構成され、支持主面を有するセラミック基板であって、
前記支持主面は、粗さがSaで0.01nm以上3.0nm以下であり、
前記支持主面において、一辺50μmの正方形領域における1nm以上の凹凸が平均で5個未満、かつ2nm以上の凹凸が平均で1個未満である、セラミック基板。 - 前記支持主面は、粗さがSqで0.5nm以下である、請求項1に記載のセラミック基板。
- 前記多結晶セラミックは、スピネル、アルミナ、マグネシア、シリカ、ムライト、コージェライト、カルシア、チタニア、窒化珪素、窒化アルミニウムおよび炭化珪素からなる群から選択される1種以上の材料から構成される、請求項1または2に記載のセラミック基板。
- 請求項1~3のいずれか1項に記載のセラミック基板と、
前記支持主面上に配置され、圧電体からなる圧電体基板と、を備え、
前記セラミック基板と前記圧電体基板とは、ファンデルワールス力により結合されている、積層体。 - 前記セラミック基板と前記圧電体基板との接合強度が0.5J/m2以上である、請求項4に記載の積層体。
- 請求項4または5に記載の積層体と、
前記圧電体基板の前記セラミック基板とは反対側の主面上に形成される電極と、を備えるSAWデバイス。
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DE112016006627.9T DE112016006627T5 (de) | 2016-03-22 | 2016-04-26 | Keramisches Substrat, Schichtkörper und SAW-Vorrichtung |
KR1020167035330A KR20170110500A (ko) | 2016-03-22 | 2016-04-26 | 세라믹 기판, 적층체 및 saw 디바이스 |
JP2017510278A JPWO2016159393A1 (ja) | 2016-03-22 | 2016-04-26 | セラミック基板、積層体およびsawデバイス |
US15/317,563 US10340886B2 (en) | 2016-03-22 | 2016-04-26 | Ceramic substrate, layered body, and saw device |
CN201680001823.3A CN107406335B (zh) | 2016-03-22 | 2016-04-26 | 陶瓷基板、层叠体和saw器件 |
TW105113988A TWI590393B (zh) | 2016-03-22 | 2016-05-05 | 陶瓷基板、積層體及表面聲波元件 |
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JP (3) | JPWO2016159393A1 (ja) |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2018180418A1 (ja) * | 2017-03-27 | 2020-02-06 | 住友電気工業株式会社 | 積層体およびsawデバイス |
WO2021124955A1 (ja) * | 2019-12-18 | 2021-06-24 | 日本碍子株式会社 | 振動板接合体 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019073783A1 (ja) * | 2017-10-12 | 2019-04-18 | 住友電気工業株式会社 | セラミック基板、積層体およびsawデバイス |
CN111194299A (zh) | 2017-10-12 | 2020-05-22 | 住友电气工业株式会社 | 陶瓷基板、层状体和saw器件 |
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SG10201905013VA (en) | 2018-06-11 | 2020-01-30 | Skyworks Solutions Inc | Acoustic wave device with spinel layer |
US12063027B2 (en) * | 2018-11-21 | 2024-08-13 | Skyworks Solutions, Inc. | Acoustic wave device with ceramic substrate |
CN113316896A (zh) * | 2019-01-18 | 2021-08-27 | 住友电气工业株式会社 | 接合体及表面弹性波器件 |
US11876501B2 (en) | 2019-02-26 | 2024-01-16 | Skyworks Solutions, Inc. | Acoustic wave device with multi-layer substrate including ceramic |
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JP7002782B1 (ja) | 2020-09-21 | 2022-01-20 | 三安ジャパンテクノロジー株式会社 | 弾性表面波デバイス |
JP7055450B2 (ja) * | 2020-09-21 | 2022-04-18 | 三安ジャパンテクノロジー株式会社 | 弾性波デバイス |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07122960A (ja) * | 1993-10-22 | 1995-05-12 | Sanyo Electric Co Ltd | 弾性表面波素子 |
JPH11116397A (ja) * | 1997-10-17 | 1999-04-27 | Kazuhiko Yamanouchi | (020)配向ペロブスカイト型ニオブ酸カリウム薄膜及び該薄膜を有する弾性表面波素子 |
WO2011034136A1 (ja) * | 2009-09-18 | 2011-03-24 | 住友電気工業株式会社 | 基板、基板の製造方法、sawデバイスおよびデバイス |
WO2012033125A1 (ja) * | 2010-09-07 | 2012-03-15 | 住友電気工業株式会社 | 基板、基板の製造方法およびsawデバイス |
WO2014027538A1 (ja) * | 2012-08-17 | 2014-02-20 | 日本碍子株式会社 | 複合基板,弾性表面波デバイス及び複合基板の製造方法 |
WO2015186560A1 (ja) * | 2014-06-06 | 2015-12-10 | 日本碍子株式会社 | ムライト焼結体、その製法及び複合基板 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005294356A (ja) * | 2004-03-31 | 2005-10-20 | Sanyo Electric Co Ltd | 積層セラミック基板の製造方法及び積層セラミック基板 |
FR2917232B1 (fr) * | 2007-06-06 | 2009-10-09 | Soitec Silicon On Insulator | Procede de fabrication d'une structure pour epitaxie sans zone d'exclusion. |
DE102007037502B4 (de) * | 2007-08-08 | 2014-04-03 | Epcos Ag | Bauelement mit reduziertem Temperaturgang |
JP2009126750A (ja) * | 2007-11-26 | 2009-06-11 | Sumitomo Electric Ind Ltd | 多結晶透明セラミックス基板の製造方法およびスピネル基板の製造方法 |
KR20110020741A (ko) * | 2009-08-24 | 2011-03-03 | 엔지케이 인슐레이터 엘티디 | 복합 기판의 제조 방법 |
JP5549167B2 (ja) * | 2009-09-18 | 2014-07-16 | 住友電気工業株式会社 | Sawデバイス |
JPWO2012043474A1 (ja) | 2010-09-27 | 2014-02-06 | 株式会社東芝 | GaNベース半導体結晶成長用多結晶窒化アルミニウム基材およびそれを用いたGaNベース半導体の製造方法 |
US9917004B2 (en) * | 2012-10-12 | 2018-03-13 | Sumitomo Electric Industries, Ltd. | Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device |
JP5989559B2 (ja) * | 2013-02-07 | 2016-09-07 | 京セラ株式会社 | 複合基板 |
TWI609435B (zh) * | 2013-02-19 | 2017-12-21 | Ngk Insulators Ltd | Composite substrate, semiconductor device and method for manufacturing semiconductor device |
TWI629753B (zh) * | 2013-04-26 | 2018-07-11 | 日本碍子股份有限公司 | 半導體用複合基板之操作基板 |
JP6347553B2 (ja) * | 2013-05-31 | 2018-06-27 | 日本碍子株式会社 | 複合基板用支持基板および複合基板 |
WO2015008694A1 (ja) * | 2013-07-18 | 2015-01-22 | 日本碍子株式会社 | 半導体用複合基板のハンドル基板 |
US20150065012A1 (en) * | 2013-08-27 | 2015-03-05 | 3M Innovative Properties Company | Method of finishing a stone surface and abrasive article |
WO2015103135A1 (en) * | 2013-12-31 | 2015-07-09 | Saint-Gobain Ceramics & Plastics, Inc. | Article comprising a transparent body including a layer of a ceramic material and a method of forming the same |
US10766165B2 (en) * | 2015-06-29 | 2020-09-08 | Corning Incorporated | Manufacturing line, process, and sintered article |
CN116936703A (zh) * | 2016-06-24 | 2023-10-24 | 克罗米斯有限公司 | 多晶陶瓷衬底及其制造方法 |
US10580666B2 (en) * | 2016-07-01 | 2020-03-03 | Corning Incorporated | Carrier substrates for semiconductor processing |
WO2018180827A1 (ja) * | 2017-03-31 | 2018-10-04 | 日本碍子株式会社 | 接合体および弾性波素子 |
-
2016
- 2016-04-26 JP JP2017510278A patent/JPWO2016159393A1/ja active Pending
- 2016-04-26 DE DE112016006627.9T patent/DE112016006627T5/de active Pending
- 2016-04-26 CN CN201680001823.3A patent/CN107406335B/zh active Active
- 2016-04-26 US US15/317,563 patent/US10340886B2/en active Active
- 2016-04-26 WO PCT/JP2016/062959 patent/WO2016159393A1/ja active Application Filing
- 2016-04-26 KR KR1020167035330A patent/KR20170110500A/ko not_active Application Discontinuation
- 2016-05-05 TW TW105113988A patent/TWI590393B/zh active
-
2017
- 2017-03-22 JP JP2017056125A patent/JP7033852B2/ja active Active
-
2021
- 2021-06-30 JP JP2021108324A patent/JP7095785B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07122960A (ja) * | 1993-10-22 | 1995-05-12 | Sanyo Electric Co Ltd | 弾性表面波素子 |
JPH11116397A (ja) * | 1997-10-17 | 1999-04-27 | Kazuhiko Yamanouchi | (020)配向ペロブスカイト型ニオブ酸カリウム薄膜及び該薄膜を有する弾性表面波素子 |
WO2011034136A1 (ja) * | 2009-09-18 | 2011-03-24 | 住友電気工業株式会社 | 基板、基板の製造方法、sawデバイスおよびデバイス |
WO2012033125A1 (ja) * | 2010-09-07 | 2012-03-15 | 住友電気工業株式会社 | 基板、基板の製造方法およびsawデバイス |
WO2014027538A1 (ja) * | 2012-08-17 | 2014-02-20 | 日本碍子株式会社 | 複合基板,弾性表面波デバイス及び複合基板の製造方法 |
WO2015186560A1 (ja) * | 2014-06-06 | 2015-12-10 | 日本碍子株式会社 | ムライト焼結体、その製法及び複合基板 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2018180418A1 (ja) * | 2017-03-27 | 2020-02-06 | 住友電気工業株式会社 | 積層体およびsawデバイス |
JP7247885B2 (ja) | 2017-03-27 | 2023-03-29 | 住友電気工業株式会社 | 積層体およびsawデバイス |
WO2021124955A1 (ja) * | 2019-12-18 | 2021-06-24 | 日本碍子株式会社 | 振動板接合体 |
KR20210131429A (ko) * | 2019-12-18 | 2021-11-02 | 엔지케이 인슐레이터 엘티디 | 진동판 접합체 |
JPWO2021124955A1 (ja) * | 2019-12-18 | 2021-12-16 | 日本碍子株式会社 | 振動板接合体 |
JP7034384B2 (ja) | 2019-12-18 | 2022-03-11 | 日本碍子株式会社 | 振動板と支持基板との接合体およびその製造方法 |
KR102383925B1 (ko) | 2019-12-18 | 2022-04-08 | 엔지케이 인슐레이터 엘티디 | 진동판 접합체 |
US11569434B2 (en) | 2019-12-18 | 2023-01-31 | Ngk Insulators, Ltd. | Vibrating plate-bonded-body |
TWI801785B (zh) * | 2019-12-18 | 2023-05-11 | 日商日本碍子股份有限公司 | 振動板接合體及振動板接合體的製造方法 |
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DE112016006627T5 (de) | 2018-12-06 |
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US20170279435A1 (en) | 2017-09-28 |
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