JP7339158B2 - セラミック基板、積層体およびsawデバイス - Google Patents
セラミック基板、積層体およびsawデバイス Download PDFInfo
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- JP7339158B2 JP7339158B2 JP2019548102A JP2019548102A JP7339158B2 JP 7339158 B2 JP7339158 B2 JP 7339158B2 JP 2019548102 A JP2019548102 A JP 2019548102A JP 2019548102 A JP2019548102 A JP 2019548102A JP 7339158 B2 JP7339158 B2 JP 7339158B2
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- 239000000758 substrate Substances 0.000 title claims description 159
- 239000000919 ceramic Substances 0.000 title claims description 103
- 239000013078 crystal Substances 0.000 claims description 37
- 239000011029 spinel Substances 0.000 claims description 9
- 229910052596 spinel Inorganic materials 0.000 claims description 9
- 238000005411 Van der Waals force Methods 0.000 claims description 6
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 5
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 description 18
- 239000000463 material Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 238000005245 sintering Methods 0.000 description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 8
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 7
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000010897 surface acoustic wave method Methods 0.000 description 4
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 3
- 229910052878 cordierite Inorganic materials 0.000 description 3
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 3
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- 229910052863 mullite Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910020068 MgAl Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- 235000012255 calcium oxide Nutrition 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910002483 Cu Ka Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 229910004288 O3.5SiO2 Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- HJUFTIJOISQSKQ-UHFFFAOYSA-N fenoxycarb Chemical compound C1=CC(OCCNC(=O)OCC)=CC=C1OC1=CC=CC=C1 HJUFTIJOISQSKQ-UHFFFAOYSA-N 0.000 description 1
- 238000007518 final polishing process Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/08—Holders with means for regulating temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
Landscapes
- Acoustics & Sound (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Ceramic Capacitors (AREA)
- Laminated Bodies (AREA)
- Inorganic Insulating Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
本出願は、2017年10月12日出願の日本出願第2017-198780号に基づく優先権を主張し、上記日本出願に記載された全ての記載内容を援用するものである。
セラミック基板と圧電体基板との接合強度が不十分な場合、SAWデバイスの製造プロセスにおいてセラミック基板と圧電体基板とが分離し、SAWデバイスの製造における歩留りを悪化させる原因となる。SAWデバイスの製造コストをさらに低減するために、セラミック基板と圧電体基板との接合強度を一層増大させることが求められている。
本開示のセラミック基板によれば、セラミック基板と圧電体基板とを十分な接合強度で結合させることが可能なセラミック基板を提供することができる。
最初に本開示の実施態様を列記して説明する。本開示のセラミック基板は、多結晶セラミックから構成され、支持主面を有するセラミック基板である。このセラミック基板は、支持主面において、多結晶セラミックの結晶粒径の、平均値が15μm以上40μm未満であり、標準偏差が上記平均値の1.5倍未満である。
次に、本開示のセラミック基板および積層体の一実施の形態を、以下に図面を参照しつつ説明する。なお、以下の図面において同一または相当する部分には同一の参照番号を付しその説明は繰返さない。
20 圧電体基板、21 露出主面、22 結合主面
30 入力側電極、31 第1部分、31A ベース部、31B 突出部
32 第2部分、32A ベース部、32B 突出部
40 出力側電極、41 第1部分、41A ベース部、41B 突出部
42 第2部分、42A ベース部、42B 突出部
51 入力側配線、61 出力側配線
100 SAWデバイス
Claims (4)
- 多結晶スピネルから構成され、タンタル酸リチウムまたはニオブ酸リチウムからなる圧電体基板を支持するための支持主面を有するセラミック基板であって、
前記支持主面において、前記多結晶スピネルの結晶粒径の、
平均値が15μm以上40μm未満であり、
標準偏差が前記平均値の1.5倍未満である、セラミック基板。 - 前記支持主面における残留応力の値が-300MPa以上300MPa以下である、請求項1に記載のセラミック基板。
- 請求項1または請求項2に記載のセラミック基板と、
タンタル酸リチウムまたはニオブ酸リチウムからなり、結合主面を有する圧電体基板と、を備え、
前記セラミック基板の前記支持主面と前記圧電体基板の前記結合主面がファンデルワールス力により結合されている、積層体。 - 請求項3に記載の積層体と、
前記圧電体基板の前記セラミック基板とは反対側の主面上に形成される電極と、を備える、SAWデバイス。
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JP2023002621A JP2023055717A (ja) | 2017-10-12 | 2023-01-11 | セラミック基板、積層体およびsawデバイス |
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JP2017198780 | 2017-10-12 | ||
JP2017198780 | 2017-10-12 | ||
PCT/JP2018/034964 WO2019073783A1 (ja) | 2017-10-12 | 2018-09-21 | セラミック基板、積層体およびsawデバイス |
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JP2023002621A Division JP2023055717A (ja) | 2017-10-12 | 2023-01-11 | セラミック基板、積層体およびsawデバイス |
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JPWO2019073783A1 JPWO2019073783A1 (ja) | 2020-09-24 |
JP7339158B2 true JP7339158B2 (ja) | 2023-09-05 |
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JP2019548102A Active JP7339158B2 (ja) | 2017-10-12 | 2018-09-21 | セラミック基板、積層体およびsawデバイス |
JP2023002621A Pending JP2023055717A (ja) | 2017-10-12 | 2023-01-11 | セラミック基板、積層体およびsawデバイス |
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JP2023002621A Pending JP2023055717A (ja) | 2017-10-12 | 2023-01-11 | セラミック基板、積層体およびsawデバイス |
Country Status (5)
Country | Link |
---|---|
US (1) | US11699985B2 (ja) |
JP (2) | JP7339158B2 (ja) |
CN (1) | CN111201710A (ja) |
TW (1) | TWI775961B (ja) |
WO (1) | WO2019073783A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007108734A (ja) | 2005-09-21 | 2007-04-26 | Schott Ag | 光学素子及び同光学素子から成る撮像光学素子 |
WO2014192597A1 (ja) | 2013-05-31 | 2014-12-04 | 日本碍子株式会社 | 複合基板用支持基板および複合基板 |
JP2017152870A (ja) | 2016-02-23 | 2017-08-31 | 太陽誘電株式会社 | 弾性波デバイス |
JP2017175618A (ja) | 2016-03-22 | 2017-09-28 | 住友電気工業株式会社 | セラミック基板、積層体およびsawデバイス |
Family Cites Families (19)
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JP4077888B2 (ja) | 1995-07-21 | 2008-04-23 | 株式会社東芝 | セラミックス回路基板 |
JPH10316466A (ja) * | 1997-05-19 | 1998-12-02 | Toshiba Ceramics Co Ltd | 透光性アルミナセラミックス |
JP3880150B2 (ja) | 1997-06-02 | 2007-02-14 | 松下電器産業株式会社 | 弾性表面波素子 |
JP2001220227A (ja) | 2000-01-31 | 2001-08-14 | Kyocera Corp | ダイヤフラム基板 |
JP4248173B2 (ja) | 2000-12-04 | 2009-04-02 | 株式会社東芝 | 窒化アルミニウム基板およびそれを用いた薄膜基板 |
JP5060439B2 (ja) | 2000-12-04 | 2012-10-31 | 株式会社東芝 | 薄膜基板の製造方法 |
CN100418769C (zh) | 2002-11-25 | 2008-09-17 | 京瓷株式会社 | 压电陶瓷、促动器及其制造方法、印刷头及喷墨打印机 |
JP5496210B2 (ja) * | 2009-08-27 | 2014-05-21 | 京セラ株式会社 | 積層型圧電素子およびこれを用いた噴射装置ならびに燃料噴射システム |
JP5549167B2 (ja) | 2009-09-18 | 2014-07-16 | 住友電気工業株式会社 | Sawデバイス |
US20120231218A1 (en) * | 2009-09-18 | 2012-09-13 | Sumitomo Electric Industries, Ltd. | Substrate, manufacturing method of substrate, saw device and device |
CN103492345B (zh) * | 2011-07-14 | 2016-04-06 | 株式会社东芝 | 陶瓷电路基板 |
JP6129738B2 (ja) * | 2011-07-14 | 2017-05-17 | 株式会社東芝 | セラミックス回路基板 |
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JP2016100729A (ja) | 2014-11-20 | 2016-05-30 | 太陽誘電株式会社 | 弾性波デバイスの製造方法 |
JP6373212B2 (ja) * | 2015-03-26 | 2018-08-15 | 日本碍子株式会社 | アルミナ焼結体の製法及びアルミナ焼結体 |
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JP6636307B2 (ja) | 2015-11-27 | 2020-01-29 | 株式会社ニッカトー | 高温特性及び耐食性に優れたアルミナ焼結体 |
JP2019067861A (ja) | 2017-09-29 | 2019-04-25 | セイコーエプソン株式会社 | 圧電アクチュエーター、圧電駆動装置、ロボット、電子部品搬送装置およびプリンター |
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2018
- 2018-09-21 WO PCT/JP2018/034964 patent/WO2019073783A1/ja active Application Filing
- 2018-09-21 CN CN201880065230.2A patent/CN111201710A/zh active Pending
- 2018-09-21 US US16/754,779 patent/US11699985B2/en active Active
- 2018-09-21 JP JP2019548102A patent/JP7339158B2/ja active Active
- 2018-10-05 TW TW107135201A patent/TWI775961B/zh active
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2023
- 2023-01-11 JP JP2023002621A patent/JP2023055717A/ja active Pending
Patent Citations (4)
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JP2007108734A (ja) | 2005-09-21 | 2007-04-26 | Schott Ag | 光学素子及び同光学素子から成る撮像光学素子 |
WO2014192597A1 (ja) | 2013-05-31 | 2014-12-04 | 日本碍子株式会社 | 複合基板用支持基板および複合基板 |
JP2017152870A (ja) | 2016-02-23 | 2017-08-31 | 太陽誘電株式会社 | 弾性波デバイス |
JP2017175618A (ja) | 2016-03-22 | 2017-09-28 | 住友電気工業株式会社 | セラミック基板、積層体およびsawデバイス |
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Publication number | Publication date |
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WO2019073783A1 (ja) | 2019-04-18 |
TW201931630A (zh) | 2019-08-01 |
CN111201710A (zh) | 2020-05-26 |
US11699985B2 (en) | 2023-07-11 |
US20200304099A1 (en) | 2020-09-24 |
JPWO2019073783A1 (ja) | 2020-09-24 |
JP2023055717A (ja) | 2023-04-18 |
TWI775961B (zh) | 2022-09-01 |
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