WO2016159295A1 - 露光装置、フラットパネルディスプレイの製造方法、デバイス製造方法、及び露光方法 - Google Patents

露光装置、フラットパネルディスプレイの製造方法、デバイス製造方法、及び露光方法 Download PDF

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Publication number
WO2016159295A1
WO2016159295A1 PCT/JP2016/060787 JP2016060787W WO2016159295A1 WO 2016159295 A1 WO2016159295 A1 WO 2016159295A1 JP 2016060787 W JP2016060787 W JP 2016060787W WO 2016159295 A1 WO2016159295 A1 WO 2016159295A1
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Prior art keywords
mark
exposure
projection optical
optical system
mark detection
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PCT/JP2016/060787
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English (en)
French (fr)
Japanese (ja)
Inventor
一夫 内藤
青木　保夫
雅幸 長島
Original Assignee
株式会社ニコン
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Application filed by 株式会社ニコン filed Critical 株式会社ニコン
Priority to KR1020177030842A priority Critical patent/KR102558072B1/ko
Priority to JP2017510221A priority patent/JP6727554B2/ja
Priority to CN201680020621.3A priority patent/CN107430357B/zh
Publication of WO2016159295A1 publication Critical patent/WO2016159295A1/ja

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically

Definitions

  • the present invention relates to an exposure apparatus, a flat panel display manufacturing method, a device manufacturing method, and an exposure method. More specifically, the present invention relates to an exposure apparatus that scans an energy beam in a predetermined scanning direction to form a predetermined pattern. The present invention relates to an exposure apparatus and method for forming on an object, and a method of manufacturing a flat panel display or device including the exposure apparatus or method.
  • an energy beam is applied to a pattern formed on a mask or reticle (hereinafter collectively referred to as “mask”).
  • An exposure apparatus is used for transferring onto a glass plate or a wafer (hereinafter collectively referred to as “substrate”).
  • a scanning-type scanning exposure apparatus is known (see, for example, Patent Document 1).
  • the projection optical system is moved while moving the projection optical system in the direction opposite to the scanning direction during exposure in order to correct the position error between the exposure target region on the substrate and the mask. Then, the mark on the substrate and the mask is measured (alignment measurement) by the alignment microscope, and the position error between the substrate and the mask is corrected based on the measurement result.
  • moving the projection optical system and the alignment microscope during alignment measurement may cause the relative measurement position to fluctuate, thereby deteriorating alignment measurement accuracy.
  • the present invention has been made under the circumstances described above. From the first viewpoint, the light from the illumination system is emitted to the object via the projection optical system, and the illumination system and the projection are applied to the object.
  • An exposure apparatus that performs scanning exposure by relatively driving an optical system in a scanning direction to form a predetermined pattern on the object, and information on a position for driving the illumination system and the projection optical system in the scanning direction And a control system that controls the projection optical system so that a change in the positional relationship between the illumination system and the projection optical system falls within a predetermined range based on the information in the scanning exposure. It is the 1st exposure apparatus provided.
  • an exposure apparatus that forms a pattern on the object by a scanning exposure operation that scans the object with an energy beam in the scanning direction, and is provided so as to be movable in the scanning direction.
  • a first mark detection system capable of detecting a pattern-side mark included in the pattern holder having the pattern, a first drive system for driving the first mark detection system in the scanning direction, and movable in the scanning direction
  • a second mark detection system capable of detecting an object-side mark provided on the object, a second drive system for driving the second mark detection system in the scanning direction, and the first and second marks
  • a control device for performing relative alignment between the pattern holder and the object based on an output of a detection system, and an element constituting the first drive system and an element constituting the second drive system
  • There is a second exposure apparatus which is common at least a part.
  • a flat panel display comprising: exposing the object using the first or second exposure apparatus of the present invention; and developing the exposed object. It is a manufacturing method.
  • a device manufacturing method comprising: exposing the object using the first or second exposure apparatus of the present invention; and developing the exposed object. is there.
  • the present invention emits light from an illumination system to an object via a projection optical system, and scans the object by relatively driving the illumination system and the projection optical system in a scanning direction.
  • An exposure method for performing exposure and forming a predetermined pattern on the object using an acquisition unit to acquire information related to a position for driving the illumination system and the projection optical system in the scanning direction;
  • the projection optical system is controlled based on the information so that a change in a positional relationship between the illumination system and the projection optical system falls within a predetermined range. .
  • an exposure method for forming a pattern on the object by a scanning exposure operation for scanning the object with an energy beam in the scanning direction is provided so as to be movable in the scanning direction. Detecting a pattern side mark included in the pattern holder having the pattern using the first mark detection system, and driving the first mark detection system in the scanning direction using the first drive system. A second mark detection system movably provided in the scanning direction is used to detect an object-side mark provided on the object, and the second mark detection system is driven second in the scanning direction.
  • a flat panel display comprising: exposing the object using the first or second exposure method of the present invention; and developing the exposed object. It is a manufacturing method.
  • a device manufacturing method comprising: exposing the object using the first or second exposure method of the present invention; and developing the exposed object. is there.
  • FIG. 2 is a block diagram showing an input / output relationship of a main controller that mainly constitutes a control system of the liquid crystal exposure apparatus of FIG. 1.
  • FIGS. 3A to 3C are diagrams for explaining the operation of the calibration sensor included in the liquid crystal exposure apparatus of FIG.
  • FIGS. 4A to 4D are diagrams (Nos. 1 to 4) for explaining the operation of the liquid crystal exposure apparatus during the exposure operation. It is a graph produced
  • FIG. 1 shows a conceptual diagram of a liquid crystal exposure apparatus 10 according to an embodiment.
  • the liquid crystal exposure apparatus 10 employs a step-and-scan method in which a rectangular (square) glass substrate P (hereinafter simply referred to as a substrate P) used in, for example, a liquid crystal display device (flat panel display) is an exposure object.
  • a projection exposure apparatus a so-called scanner.
  • the liquid crystal exposure apparatus 10 includes an illumination system 20 that irradiates illumination light IL that is an energy beam for exposure, and a projection optical system 40.
  • the direction parallel to the optical axis of the illumination light IL applied to the substrate P from the illumination system 20 via the projection optical system 40 is referred to as the Z-axis direction
  • the X-axis is orthogonal to each other in a plane orthogonal to the Z-axis.
  • the explanation will be given with the Y axis set. In the coordinate system of the present embodiment, it is assumed that the Y axis is substantially parallel to the direction of gravity. Therefore, the XZ plane is substantially parallel to the horizontal plane.
  • the rotation (tilt) direction around the Z axis will be described as the ⁇ z direction.
  • a plurality of exposure target areas (which will be referred to as partition areas or shot areas as appropriate) are set on one substrate P, and a mask pattern is sequentially transferred to the plurality of shot areas. Is done.
  • partition areas or shot areas as appropriate
  • a mask pattern is sequentially transferred to the plurality of shot areas.
  • the liquid crystal exposure apparatus 10 performs a so-called step-and-scan exposure operation.
  • the mask M and the substrate P are substantially stationary, and the illumination system 20 and the projection optical system. 40 (illumination light IL) moves relative to the mask M and the substrate P with a long stroke in the X-axis direction (referred to as the scanning direction as appropriate) (see the white arrow in FIG. 1).
  • the mask M is stepped with a predetermined stroke in the X-axis direction
  • the substrate P is stepped with a predetermined stroke in the Y-axis direction (see FIGS. 1 black arrow).
  • FIG. 2 is a block diagram showing the input / output relationship of the main control device 90 that controls the components of the liquid crystal exposure apparatus 10 in an integrated manner.
  • the liquid crystal exposure apparatus 10 includes an illumination system 20, a mask stage device 30, a projection optical system 40, a substrate stage device 50, an alignment system 60, a calibration sensor 70, and the like.
  • the illumination system 20 includes an illumination system body 22 including a light source (for example, a mercury lamp) of illumination light IL (see FIG. 1).
  • the main controller 90 scans the illumination system main body 22 with a predetermined long stroke in the X-axis direction by controlling the drive system 24 including, for example, a linear motor.
  • the main controller 90 obtains position information of the illumination system body 22 in the X-axis direction via the measurement system 26 including, for example, a linear encoder, and performs position control of the illumination system body 22 based on the position information.
  • g-line, h-line, i-line or the like is used as the illumination light IL.
  • the mask stage apparatus 30 includes a stage main body 32 that holds the mask M.
  • the stage main body 32 is configured to be appropriately step-movable in the X axis direction and the Y axis direction by a drive system 34 including, for example, a linear motor.
  • the main controller 90 controls the drive system 34 to step-drive the stage body 32 in the X-axis direction. Further, as will be described later, during the step operation for changing the scanning exposure region (position) in the Y-axis direction in the partition region to be exposed, the main controller 90 controls the drive system 34 to control the stage.
  • the main body 32 is step-driven in the Y-axis direction.
  • the drive system 34 can also appropriately finely drive the mask M in the direction of three degrees of freedom (X, Y, ⁇ z) in the XY plane during an alignment operation described later.
  • the position information of the mask M is obtained by a measurement system 36 including a linear encoder, for example.
  • the projection optical system 40 includes a projection system main body 42 including an optical system that forms an erect image of a mask pattern on a substrate P (see FIG. 1) in the same magnification system.
  • the projection system main body 42 is disposed in a space formed between the substrate P and the mask M (see FIG. 1).
  • the main controller 90 controls the drive system 44 including, for example, a linear motor, so that the projection system main body 42 has a predetermined length in the X-axis direction so as to synchronize with the illumination system main body 22. Scan drive with stroke.
  • the main controller 90 obtains position information in the X-axis direction of the projection system main body 42 via the measurement system 46 including, for example, a linear encoder, and controls the position of the projection system main body 42 based on the position information.
  • the illumination light IL that has passed through the mask M passes through the projection optical system 40.
  • a projection image (partial upright image) of the mask pattern in the illumination area IAM is formed in the irradiation area (exposure area IA) of the illumination light IL conjugate to the illumination area IAM on the substrate P.
  • the scanning light exposure operation is performed when the illumination light IL (the illumination area IAM and the exposure area IA) moves relative to the mask M and the substrate P in the scanning direction. That is, in the liquid crystal exposure apparatus 10, the pattern of the mask M is generated on the substrate P by the illumination system 20 and the projection optical system 40, and the sensitive layer (resist layer) on the substrate P is exposed by the illumination light IL. The pattern is formed.
  • the illumination area IAM generated on the mask M by the illumination system 20 includes a pair of rectangular areas separated in the Y-axis direction.
  • the length in the Y-axis direction of one rectangular area is, for example, 1 in the length in the Y-axis direction of the pattern surface of the mask M (that is, the length in the Y-axis direction of each partition area set on the substrate P). / 4 is set.
  • the distance between the pair of rectangular areas is set to, for example, 1/4 of the length of the pattern surface of the mask M in the Y-axis direction.
  • the exposure area IA generated on the substrate P similarly includes a pair of rectangular areas spaced apart in the Y-axis direction.
  • the illumination system main body 22 and the projection system main body 42 are required. There is an advantage that can be downsized. A specific example of the scanning exposure operation will be described later.
  • the substrate stage apparatus 50 includes a stage body 52 that holds the back surface of the substrate P (the surface opposite to the exposure surface).
  • the main controller 90 controls the drive system 54 including, for example, a linear motor to move the stage main body 52 to the Y-direction. Step drive in the axial direction.
  • the drive system 54 can also minutely drive the substrate P in the direction of three degrees of freedom (X, Y, ⁇ z) in the XY plane during a substrate alignment operation described later.
  • the position information of the substrate P (stage main body 52) is obtained by a measurement system 56 including, for example, a linear encoder.
  • the alignment system 60 includes an alignment microscope 62.
  • the alignment microscope 62 is arranged in a space formed between the substrate P and the mask M (position between the substrate P and the mask M with respect to the Z-axis direction), and the alignment mark Mk formed on the substrate P. (Hereinafter simply referred to as a mark Mk) and a mark (not shown) formed on the mask M are detected.
  • a mark Mk is formed near each of the four corners of each partition area (for example, four for each partition area), and the mark on the mask M is marked via the projection optical system 40. It is formed at a position corresponding to Mk.
  • the numbers and positions of the marks Mk and the marks of the mask M are not limited to this, and can be changed as appropriate. In each drawing, the mark Mk is shown larger than the actual size for easy understanding.
  • the alignment microscope 62 is arranged on the + X side of the projection system main body 42.
  • the alignment microscope 62 has a pair of detection visual fields (detection areas) separated in the Y-axis direction, and can simultaneously detect, for example, two marks Mk separated in the Y-axis direction in one partition area. It is like that.
  • the alignment microscope 62 can simultaneously detect the mark formed on the mask M and the mark Mk formed on the substrate P (in other words, without changing the position of the alignment microscope 62). .
  • the main controller 90 performs information on the relative displacement between the mark formed on the mask M and the mark Mk formed on the substrate P. Then, relative positioning of the substrate P and the mask M in the direction along the XY plane is performed so as to correct (cancel or reduce) the positional deviation.
  • a mask detection unit for detecting (observing) the mark on the mask M and a substrate detection unit for detecting (observing) the mark Mk on the substrate P are integrally configured by a common housing or the like. It is driven by a drive system 66 (see FIG. 2) through the common housing.
  • the mask detection unit and the substrate detection unit may be configured by separate housings, and in that case, for example, the mask detection unit and the substrate detection unit are substantially equivalent by a common drive system 66. It is preferable to be configured so that it can move with operating characteristics.
  • the main controller 90 drives the alignment microscope 62 with a predetermined long stroke in the X-axis direction by controlling a drive system 66 including, for example, a linear motor. Further, the main controller 90 obtains position information of the alignment microscope 62 in the X-axis direction via a measurement system 68 including, for example, a linear encoder, and performs position control of the alignment microscope 62 based on the position information. Further, the projection system main body 42 and the alignment microscope 62 have substantially the same position in the Y-axis direction, and their movable ranges partially overlap each other.
  • the drive system 66 that drives the alignment microscope 62 and the drive system 44 that drives the projection system main body 42 share a part of, for example, a linear motor, a linear guide, and the like for driving in the X-axis direction.
  • the characteristic or the control characteristic by the main controller 90 is configured to be substantially the same.
  • Main controller 90 detects a plurality of marks Mk formed on substrate P using alignment microscope 62, and based on the detection results (position information of the plurality of marks Mk), Arrangement information (including information on the position (coordinate value), shape, etc. of the partition area) of the partition area in which the mark Mk to be detected is formed is calculated by an enhanced global alignment (EGA) method.
  • ESA enhanced global alignment
  • the main controller 90 uses the alignment microscope 62 arranged on the + X side of the projection system main body 42 prior to the scanning exposure operation to at least expose the object.
  • the position information of, for example, four marks Mk formed in the divided area is detected, and the arrangement information of the divided areas is calculated.
  • the main controller 90 performs precise positioning (substrate alignment operation) in the three degrees of freedom in the XY plane of the substrate P based on the calculated arrangement information of the partition areas to be exposed, the illumination system 20, and the projection
  • the optical system 40 is controlled as appropriate to perform a scanning exposure operation (mask pattern transfer) on the target partition region.
  • a measurement system 46 for obtaining position information of the projection system main body 42 included in the projection optical system 40 and a measurement system 68 for obtaining position information of the alignment microscope 62 included in the alignment system 60 will be described.
  • a typical configuration will be described.
  • the liquid crystal exposure apparatus 10 has a guide 80 for guiding the projection system main body 42 in the scanning direction.
  • the guide 80 is made of a member extending in parallel with the scanning direction.
  • the guide 80 also has a function of guiding the movement of the alignment microscope 62 in the scanning direction.
  • the guide 80 is illustrated between the mask M and the substrate P. Actually, however, the guide 80 is disposed at a position avoiding the optical path of the illumination light IL in the Y-axis direction. Has been.
  • a scale 82 including a reflective diffraction grating having a periodic direction at least in a direction parallel to the scanning direction (X-axis direction) is fixed to the guide 80.
  • the projection system main body 42 has a head 84 disposed so as to face the scale 82.
  • the scale 82 and the head 84 form an encoder system that constitutes a measurement system 46 (see FIG. 2) for obtaining position information of the projection system main body 42.
  • the alignment microscope 62 has a head 86 that is disposed to face the scale 82.
  • the scale 82 and the head 86 form an encoder system that constitutes a measurement system 68 (see FIG. 2) for obtaining positional information of the alignment microscope 62.
  • the heads 84 and 86 respectively irradiate the scale 82 with a beam for encoder measurement, receive a beam through the scale 82 (a reflected beam by the scale 82), and based on the light reception result, the scale 82. Relative position information can be output.
  • the scale 82 constitutes the measurement system 46 (see FIG. 2) for obtaining the position information of the projection system main body 42, and the measurement system 68 (for obtaining the position information of the alignment microscope 62). (See FIG. 2). That is, the position control of the projection system main body 42 and the alignment microscope 62 is performed based on a common coordinate system (measurement axis) set by the diffraction grating formed on the scale 82.
  • the drive system 44 (see FIG. 2) for driving the projection system main body 42 and the drive system 66 (see FIG. 2) for driving the alignment microscope 62 may have some common elements. It may be constituted by completely independent elements.
  • the encoder system constituting the measuring systems 46 and 68 may be a linear (1 DOF) encoder system whose length measuring axis is only in the X-axis direction (scanning direction), for example. There may be more measuring axes.
  • the rotation amounts of the projection system main body 42 and the alignment microscope 62 in the ⁇ z direction may be obtained by arranging a plurality of heads 84 and 86 at predetermined intervals in the Y-axis direction.
  • an XY two-dimensional diffraction grating may be formed on the scale 82, and a 3DOF encoder system having measurement axes in the three degrees of freedom in the X, Y, and ⁇ z directions may be used.
  • the freedom of the projection system main body 42 and the alignment microscope 62 can be reduced. Position information in the degree direction may be obtained.
  • the calibration sensor 70 is arranged on the ⁇ X side of the substrate stage device 50 independently of the substrate stage device 50.
  • the position of the calibration sensor 70 is fixed with respect to the guide 80 and the scale 82 (see FIG. 3A, respectively).
  • the calibration sensor 70 has a plurality of reference indices, an observation optical system, a camera, and the like (each not shown).
  • the main controller 90 performs a known calibration operation (illuminance) with respect to the illumination system IL and / or the projection system body 42 via the mask M and / or the projection system body 42. Calibration, focus calibration, etc.).
  • the movement range (movement path) during a series of scanning exposure operations are guided by a common guide 80, the movement range (movement path) during a series of scanning exposure operations (including alignment measurement operations). are duplicated (common).
  • the calibration sensor 70 is arranged so that the calibration position is set on the movement path of the projection system main body 42 and the alignment microscope 62 (on the extension of the movement path for scanning exposure). That is, the liquid crystal exposure apparatus 10 can perform a calibration operation using the calibration sensor 70 while moving the projection system main body 42 and the alignment microscope 62 along the movement path in a series of scanning exposure operations. .
  • the main controller 90 has the mark formed on the mask M and the reference of the calibration sensor 70 via the mask M and the projection system main body 42 (lens) at the position shown in FIG. A positional deviation amount from the mark 72 is obtained based on the output of the calibration sensor 70. Thereafter, as shown in FIG. 3B, the main controller 90 moves the projection system main body 42 and the alignment microscope 62 in the ⁇ X direction without moving the mask M, and the mask M and the calibration sensor. An alignment microscope 62 is disposed between the two. Then, the main controller 90 causes the alignment microscope 62 to measure the mark formed on the mask M and the reference mark 72, and outputs the positional deviation amount measured via the projection system main body 42 and the output of the alignment microscope 62. Based on this, the alignment microscope 62 is calibrated with respect to the projection system main body 42.
  • the calibration sensor 70 has a sensor (not shown) (for example, a camera) that can detect a mark 74 formed on the projection system main body 42, as shown in FIG.
  • the main controller 90 detects the position of the mark 74 using the sensor (not shown) during the calibration operation (see FIG. 3A). In the state shown in FIG. 3B, the main controller 90 detects the position of the alignment microscope 62. It is assumed that the distance between the reference mark 72 and the center of the detection field of the sensor of the calibration sensor 70 is known.
  • the main controller 90 determines the positional relationship between the projection system main body 42 and the alignment microscope 62 (that is, the scale 82) based on the outputs of the heads 84 and 86 in the states shown in FIGS. 3B and 3C, respectively. (The origin of each coordinate system based on).
  • FIGS. 4 (a) to 4 (d) an example of the operation of the liquid crystal exposure apparatus 10 during the scanning exposure operation will be described with reference to FIGS. 4 (a) to 4 (d).
  • the following exposure operation is performed under the control of the main controller 90 (not shown in FIGS. 4A to 4D, see FIG. 2).
  • divided areas exposed order is the first (hereinafter referred to as the first shot area S 1) is set on the -X side and -Y side of the substrate P.
  • a rectangular area denoted by reference symbol A indicates the movement range (movement path) of the projection system main body 42 during the scanning exposure operation, and denoted by reference symbol CP.
  • the rectangular area indicates the position (calibration position) where the calibration operation is performed by the calibration sensor 70 (see FIG. 1).
  • the movement range A of the projection system main body 42 is set, for example, mechanically and / or electrically.
  • the reference numerals S 2 to S 4 given to the partition areas on the substrate P indicate that the exposure areas are the second to fourth shot areas, respectively.
  • main controller 90 Prior to the start of a series of scanning exposure operations, main controller 90 performs a calibration operation (illuminance calibration, focus calibration, etc.) on illumination system IL and / or projection system main body 42 using calibration sensor 70. Perform (see FIG. 3A).
  • a calibration operation illumination calibration, focus calibration, etc.
  • the main controller 90 obtains positional information of the alignment microscope 62 and the projection system main body 42 using the calibration sensor 70 together with the calibration operation (see FIGS. 3B and 3C, respectively). ), Associating the positional relationship between the two.
  • the positions of the alignment microscope 62 and the projection system main body 42 during the following series of scanning exposure operations are controlled based on the positional relationship between the alignment microscope 62 and the projection system main body 42 obtained at this time.
  • the main control unit 90 by driving the alignment microscope 62 in the + X direction, the first shot area S within 1, and the fourth shot area S 4 (first shot area S 1 Bruno + X side is formed on the divided area) in, for example to detect the eight marks Mk, based on the detection result, obtaining the sequence information of the first shot area S 1.
  • the arrangement information of the first shot region S 1 may be obtained using only the four marks Mk in the first shot region S 1 as appropriate.
  • the main controller 90 After calculating the sequence information of the first shot area S 1, the main controller 90, as shown in FIG. 4 (b), the illumination system main body 22 of the projection system main body 42 and the illumination system 20 (see FIG. 4 (b) in not shown. see FIG. 1) and is driven in synchronism with the + X direction, and performs the first scanning exposure for the first shot area S 1.
  • the main controller 90 controls the illumination system 20 while performing minute position control of the substrate P according to the calculation result of the array information, and the illumination light IL is not shown in the mask M (not shown in FIG. 4B). And a part of the mask pattern is formed in the exposure area IA generated on the substrate P by the illumination light IL.
  • the illumination area IAM (see FIG. 1) generated on the mask M and the exposure area IA generated on the substrate P are a pair of rectangular areas separated in the Y-axis direction. Therefore, the pattern image of the mask M transferred to the substrate P by one scanning exposure operation is a band-like region extending in the X-axis direction and separated from the Y-axis direction (of the total area of one partition region). Half area).
  • main controller 90 performs step movement of substrate P and mask M in the ⁇ Y direction as shown in FIG. 4C for the second scanning exposure operation of first shot region S 1 (FIG. 4C). 4 (c), see black arrow).
  • the step movement amount of the substrate P at this time is, for example, 1/4 of the length of one partition region in the Y-axis direction.
  • the relative positional relationship between the substrate P and the mask M is not changed (or the relative positional relationship can be corrected).
  • the main controller 90 performs the scanning exposure operation of the second projection system first shot by driving the main body 42 in the -X direction area S 1 (backward).
  • the mask pattern transferred by the first scanning exposure operation a mask pattern transferred by the second time of the scanning exposure operation is joined together with the first shot in region S 1, the overall pattern of the mask M It is transferred to the first shot area S 1.
  • FIG. 4C after the substrate P and the mask M are stepped in the ⁇ Y direction, the alignment measurement between the substrate P and the mask M is performed again until the second scanning exposure is started. Based on the result, mutual alignment may be performed.
  • the first shot area S 1 overall alignment accuracy, it is possible to turn improve the pattern transfer accuracy of the mask M to the first shot area S 1.
  • the main controller 90 moves the substrate P to ⁇ Y in order to perform the scanning exposure operation on the second shot area S 2 (the partitioned area on the + Y side of the first shot area S 1 ). direction moved stepwise to oppose the second shot area S 2 and the mask M have. Scanning exposure operation for the second shot area S 2 will be omitted because it is identical to the scanning exposure operation for the first shot area S 1 described above. Thereafter, the main controller 90 performs the scanning exposure operation on the third and fourth shot regions S 3 and S 4 while appropriately performing at least one of the X step operation of the mask M and the Y step operation of the substrate P.
  • the positional relationship between the alignment microscope 62 and the projection system main body 42 may be obtained using the calibration sensor 70 before performing the scanning exposure operation on the second to fourth shot regions S 2 to S 4 . . Further, when performing alignment for the fourth shot area S 4, it may be utilized first shot area S 1 of the alignment measurement results described above (EGA result of the calculation). In that case, when the opposite is arranged a mask M fourth shot area S 4 are three degrees of freedom in the XY plane on the basis of the marks of the respective two points between the mark Mk mark and the substrate P of the mask M ( It is only necessary to measure the positional deviation in the X, Y, ⁇ z) direction, and the time required for the alignment of the fourth shot region S4 can be substantially shortened.
  • the main controller 90 moves the illumination system main body 22 and the projection system main body 42 independently and synchronously with a long stroke in the scanning direction.
  • a positioning operation (calibration) is performed with respect to the relative position in the scanning direction between the illumination system main body 22 and the projection system main body 42.
  • the main controller 90 moves the projection system main body 42 to a predetermined position (the projection system main body 42 is moved using the mark 74 formed on the projection system main body 42.
  • the illumination system body 22 is moved in the scanning direction, and the illumination light is applied to a predetermined calibration mark (not shown) after the image is formed on the calibration sensor 70.
  • the IL is irradiated, and an image of the mark is formed on the calibration sensor 70 via the projection system main body 42 (projection lens) (see FIG. 3A).
  • the calibration mark for example, a slit-shaped mark, a mark having a periodic pattern, or the like can be used.
  • the calibration mark may be formed on the mask M or may be formed on a member other than the mask M (for example, a member dedicated to calibration).
  • a graph as shown in FIG. 5 is obtained as an example from the output of the calibration sensor 70.
  • the vertical axis indicates the light intensity of the illumination light IL
  • the horizontal axis indicates the position of the illumination system body 22 in the X-axis direction.
  • the main controller 90 acquires information on the X position corresponding to the vicinity of the peak of the light intensity from the graph shown in FIG.
  • the information includes information on the X position of the illumination system body 22, information on the X position of the illumination system body 22 with respect to the projection system body 42, information on the difference in X position between the illumination system body 22 and the projection system body 42, and the illumination system body 22 Is the position correction information for matching the position of X with the X position of the projection system main body 42. Then, during the following scanning exposure operation, position control between the projection system main body 42 and the illumination system main body 22 is performed so that the relative positional relationship between the projection system main body 42 and the illumination system main body 22 at the time of completion of the positioning is substantially maintained. .
  • the relative positional relationship between the projection system main body 42 and the illumination system main body 22 does not have to be accurately reproduced, and the light intensity at the peak is generally maintained (a desired light intensity is obtained). A small positional shift in the relative positional relationship between the projection system main body 42 and the illumination system main body 22 is allowed.
  • the illumination system main body 22 and the projection system main body 42 do not have to move strictly in synchronization (in the same direction at the same speed) during the scanning exposure operation.
  • a predetermined relative position error is allowed. That is, if the relative positions of the illumination system main body 22 and the projection system main body 42 are shifted during the scanning exposure operation, the projection system main body 42 (projection lens) for forming an image of the mask pattern on the substrate P is used. Changes in the imaging characteristics occur, but if the mask pattern does not collapse due to the changes in the imaging characteristics, the change in the imaging characteristics is allowed to have no effect on the overlay accuracy of the patterns. Is done. FIG.
  • FIG. 6 shows a calibration mark projected in the projection area IA (image field) formed by the projection system main body 42.
  • the imaging characteristics of the projection system main body 42 change, and a positional deviation occurs in the image of the calibration mark formed in the image field before and after the change (see the arrow in FIG. 6).
  • the change range of the imaging characteristics can be regarded as an allowable range. A minute relative position error with respect to the projection system main body 42 is allowed.
  • the main controller 90 corrects the wavefront aberration of the projection system main body 42, that is, the imaging performance. .
  • the main controller 90 determines the wavefront aberration of the projection system main body 42 in the state where the relative alignment between the illumination system main body 22 and the projection system main body 42 is completed (that is, the light intensity is peaked in the graph of FIG. 5). Obtained using Zernike polynomials.
  • the wavefront aberration measurement method is not particularly limited.
  • the wavefront aberration measurement mark included in the mask M may be used, or a Shack-Hartmann wavefront sensor may be used.
  • the main controller 90 corrects the aberration using a correction optical system (not shown) of the projection system main body 42 (projection lens).
  • a correction optical system not shown
  • wavefront aberration is measured and corrected, but other aberrations (for example, Seidel aberration) may be measured and corrected.
  • the calibration method for adjusting (aligning) the relative positional relationship between the illumination system main body 22 and the projection system main body 42 is not limited to the above-described one, and can be appropriately changed. That is, as described above, the illumination system main body 22 and the projection system main body 42 are allowed to be slightly misaligned, so that the positioning accuracy between them may be relatively rough. For this reason, as shown in FIG. 7, by bringing the illumination system main body 22 and the projection system main body 42 into contact with the mechanical block 78 which is a fixing member for positioning (see the white arrow in FIG. 7), It is also possible to mechanically calibrate (position) the illumination system main body 22 and the projection system main body 42.
  • the timing for performing the calibration operation is not particularly limited.
  • the calibration operation may be performed at a predetermined timing according to the number of processed substrates P, or according to the total movement distance of the illumination system main body 22 and the projection system main body 42. You can go.
  • a temperature sensor may be installed in the exposure apparatus 10 and calibration may be performed when there is a possibility that position measurement errors of the illumination system main body 22 and the projection system main body 42 are caused by temperature changes.
  • the detection system for detecting the mark on the mask M and the detection system for detecting the mark Mk on the substrate P are substantially common in the scanning direction. Since it is moved by the drive system, it is possible to improve alignment measurement accuracy in a beam scanning type scanning exposure apparatus such as the liquid crystal exposure apparatus 10 of the present embodiment.
  • the projection system main body 42 and the alignment microscope 62 are also moved by a substantially common drive system in the scanning direction, the exposure accuracy based on the alignment measurement result by the alignment microscope 62 can be improved.
  • the calibration position by the calibration sensor 70 is provided on the movement path of the alignment microscope 62 and the projection system main body 42 (see FIGS. 4A to 4D). It is possible to suppress time loss (so-called reduction in tact time) due to the performance.
  • the calibration sensor 70 (calibration position) may be provided on the ⁇ X side of the substrate stage apparatus 50 as well.
  • the position information of the projection system main body 42 and the alignment microscope 62 is obtained by the encoder system in which the coordinate system is defined by the scale 82.
  • the configuration of the measurement system is not limited to this. Other measurement systems such as an interferometer system may be used.
  • the pair of alignment microscopes 62 having a pair of detection visual fields is arranged on the + X side of the projection system main body 42, but the number of alignment microscopes is not limited to this.
  • two sets of alignment microscopes may be used.
  • the alignment microscopes 62 may be arranged on the + X side and the ⁇ X side (one side and the other side in the scanning direction) of the projection system main body 42, respectively.
  • the mark Mk is placed using the ⁇ X side alignment microscope 62.
  • the following scanning exposure of the first shot area S 1 may be performed scanning exposure of the fourth shot area S 4.
  • the first and fourth shot regions S 1 it can be scanned exposing the S 4 sequentially.
  • it may be performed scanning exposure of the fourth shot area S 4 by step movement of the mask M in the + X direction after the scanning exposure of the first shot area S 1.
  • the mark Mk is formed in each partition area (first to fourth shot areas S 1 to S 4 ).
  • the present invention is not limited to this, and an area (so-called scribe) between adjacent partition areas is not limited thereto. Line).
  • a pair of illumination area IAM and exposure area IA spaced apart in the Y-axis direction are generated on the mask M and the substrate P (see FIG. 1), but the shapes of the illumination area IAM and exposure area IA
  • the length is not limited to this and can be changed as appropriate.
  • the length of the illumination area IAM and the exposure area IA in the Y-axis direction may be equal to the pattern surface of the mask M and the length of one partition area on the substrate P in the Y-axis direction, respectively. In this case, the transfer of the mask pattern is completed with a single scanning exposure operation for each partitioned region.
  • the illumination area IAM and the exposure area IA are one area whose length in the Y-axis direction is half the length in the Y-axis direction of one partition area on the pattern surface of the mask M and the substrate P, respectively. Also good. In this case, similarly to the above embodiment, it is necessary to perform the scanning exposure operation twice for one partitioned area.
  • the joint portion means a joint portion between an area exposed by the forward scanning exposure (area where the pattern is transferred) and an area exposed by the backward scanning exposure (the area where the pattern is transferred). To do.
  • the mark Mk in the vicinity of the joint portion the mark Mk may be formed on the substrate in advance, or an exposed pattern may be used as the mark Mk.
  • each includes a linear motor has been described.
  • the types of actuators for driving the illumination system main body 22, the stage main body 32, the projection system main body 42, the stage main body 52, and the alignment microscope 62 are not limited thereto, and are appropriately selected.
  • Various actuators such as a feed screw (ball screw) device and a belt drive device can be changed. It can be used as appropriate.
  • the case where the system 68 (see FIG. 2 respectively) includes a linear encoder has been described, but in order to measure the positions of the illumination system main body 22, the stage main body 32, the projection system main body 42, the stage main body 52, and the alignment microscope 62.
  • the type of the measurement system is not limited to this, and can be changed as appropriate.
  • an optical interferometer or a linear encoder It is possible to use various measurement systems, such as measurement system using a combination of chromatography da and optical interferometer as appropriate.
  • the light source used in the illumination system 20 and the wavelength of the illumination light IL emitted from the light source are not particularly limited.
  • ArF excimer laser light wavelength 193 nm
  • KrF excimer laser light wavelength 248 nm
  • vacuum ultraviolet light such as F 2 laser light (wavelength 157 nm).
  • the illumination system main body 22 including the light source is driven in the scanning direction.
  • the present invention is not limited to this.
  • the light source is fixed. Only the illumination light IL may be scanned in the scanning direction.
  • the illumination area IAM and the exposure area IA are formed in a strip shape extending in the Y-axis direction.
  • the present invention is not limited to this.
  • a plurality of regions arranged in a staggered pattern may be combined.
  • the mask M and the substrate P are arranged so as to be orthogonal to the horizontal plane (so-called vertical arrangement).
  • the present invention is not limited to this, and the mask M and the substrate P are parallel to the horizontal plane. It may be arranged.
  • the optical axis of the illumination light IL is substantially parallel to the direction of gravity.
  • fine positioning in the XY plane of the substrate P was performed in accordance with the alignment measurement result during the scanning exposure operation.
  • the surface of the substrate P before the scanning exposure operation (or in parallel with the scanning exposure operation). Position information may be obtained, and surface position control (so-called autofocus control) of the substrate P may be performed during the scanning exposure operation.
  • the use of the exposure apparatus is not limited to an exposure apparatus for liquid crystal that transfers a liquid crystal display element pattern onto a square glass plate.
  • an exposure apparatus for manufacturing an organic EL (Electro-Luminescence) panel, a semiconductor The present invention can be widely applied to an exposure apparatus for manufacturing, an exposure apparatus for manufacturing a thin film magnetic head, a micromachine, a DNA chip, and the like.
  • an exposure apparatus for manufacturing a thin film magnetic head a micromachine, a DNA chip, and the like.
  • the present invention can also be applied to an exposure apparatus that transfers a circuit pattern.
  • the object to be exposed is not limited to the glass plate, but may be another object such as a wafer, a ceramic substrate, a film member, or a mask blank.
  • the thickness of the substrate is not particularly limited, and includes, for example, a film-like (flexible sheet-like member).
  • the exposure apparatus of the present embodiment is particularly effective when a substrate having a side length or diagonal length of 500 mm or more is an exposure target.
  • the substrate to be exposed is a flexible sheet, the sheet may be formed in a roll shape. In this case, the partition area to be exposed can be easily changed (stepped) with respect to the illumination area (illumination light) by rotating (winding) the roll regardless of the step operation of the stage device. .
  • the step of designing the function and performance of the device the step of producing a mask (or reticle) based on this design step, and the step of producing a glass substrate (or wafer)
  • the above-described exposure method is executed using the exposure apparatus of the above embodiment, and a device pattern is formed on the glass substrate. Therefore, a highly integrated device can be manufactured with high productivity. .
  • the exposure apparatus of the present invention is suitable for scanning exposure of an object.
  • the manufacturing method of the flat panel display of this invention is suitable for production of a flat panel display.
  • the device manufacturing method of the present invention is suitable for the production of micro devices.
  • SYMBOLS 10 Liquid crystal exposure apparatus, 20 ... Illumination system, 30 ... Mask stage apparatus, 40 ... Projection optical system, 50 ... Substrate stage apparatus, 60 ... Alignment system, 70 ... Calibration sensor, M ... Mask, P ... Substrate.

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  • Crystallography & Structural Chemistry (AREA)
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
PCT/JP2016/060787 2015-03-31 2016-03-31 露光装置、フラットパネルディスプレイの製造方法、デバイス製造方法、及び露光方法 WO2016159295A1 (ja)

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JP2017510221A JP6727554B2 (ja) 2015-03-31 2016-03-31 露光装置、フラットパネルディスプレイの製造方法、デバイス製造方法、及び露光方法
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TWI741654B (zh) 2021-10-01
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