WO2016157611A1 - 露光データ生成方法、製造方法、露光データ生成装置、露光データ生成プログラム、および、製造システム - Google Patents

露光データ生成方法、製造方法、露光データ生成装置、露光データ生成プログラム、および、製造システム Download PDF

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WO2016157611A1
WO2016157611A1 PCT/JP2015/083016 JP2015083016W WO2016157611A1 WO 2016157611 A1 WO2016157611 A1 WO 2016157611A1 JP 2015083016 W JP2015083016 W JP 2015083016W WO 2016157611 A1 WO2016157611 A1 WO 2016157611A1
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WIPO (PCT)
Prior art keywords
exposure
layer
resist
multilayer
area
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PCT/JP2015/083016
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English (en)
French (fr)
Japanese (ja)
Inventor
泰充 藤澤
祥雄 古谷
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Priority to CN201580078204.XA priority Critical patent/CN107430345B/zh
Priority to KR1020177024361A priority patent/KR20170108149A/ko
Publication of WO2016157611A1 publication Critical patent/WO2016157611A1/ja

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Definitions

  • the present invention relates to a technique for manufacturing a multilayered three-dimensional structure by exposing along exposure data.
  • the present invention has been made in view of the above problems, and with regard to the production of a multilayer three-dimensional structure, the depth of each concave portion on the concave and convex surface can be individually adjusted, and the shape of the concave and convex surface caused by the misalignment of the exposure position
  • the purpose is to provide technology that can suppress change.
  • the exposure data generation method is to produce a multilayer structure by developing a resist laminate formed by repeatedly forming a resist layer and exposing the resist layer in each layer.
  • an exposure data generation method for generating a plurality of exposure data wherein the multilayer three-dimensional structure is formed in each layer in the depth direction based on design data representing the multilayer three-dimensional structure having an uneven surface on one side.
  • a division pattern generation step for generating a plurality of division patterns expressing each pattern when divided, a convex area including a convex surface on the one side, and a concave area including a concave surface on the one side with respect to the plurality of division patterns And a data generation step of setting a concave surface peripheral region positioned around the concave surface region as an exposure region and generating a plurality of exposure data.
  • An exposure data generation method is the exposure data generation method according to the first aspect of the present invention, wherein the data generation step is performed on the multi-layer solid with respect to the plurality of divided patterns.
  • a first process for setting an existing area of the structure as an exposure area and a non-existing area of the multilayered three-dimensional structure as a non-exposure area; and an exposure area in the one layer of the exposure areas after the first process A second process for setting the convex surface area and the concave surface area as an exposure area by changing the area in which non-exposure is set to the non-exposure area, and surrounding the concave area among the non-exposure areas after the second process.
  • the convex area, the concave area, and the concave surrounding area are set as exposure areas, and the plurality of exposure data is generated. Characterized in that it is a step of executing processing with the.
  • An exposure data generation method is the exposure data generation method according to the first or second aspect of the present invention, wherein the exposure apparatus performs exposure on the resist layer.
  • the upper limit of the deviation when the exposure position deviates from the reference exposure position is known in advance as the overlay accuracy, and the width of the area around the concave surface is 2 to 3 times the overlay accuracy. It is characterized by.
  • An exposure data generation method is the exposure data generation method according to any one of the first to third aspects of the present invention, wherein the uneven surface has a plurality of recesses.
  • the relatively wide recesses of the plurality of recesses are relatively shallow, and the relatively narrow recesses of the plurality of recesses are relatively deep.
  • a multi-dimensional solid having a concavo-convex surface on one side is developed by developing a resist laminate formed by repeatedly forming a resist layer and exposing the resist layer in each layer.
  • a manufacturing method for manufacturing a structure which is repeatedly performed on each layer in order from the other side to the one side, a coating step of applying a resist to form a resist layer, and heating the resist layer.
  • the resist layer based on a pre-bake step and exposure data corresponding to the layer among the plurality of exposure data generated by the exposure data generation method according to any of the first to fourth aspects of the present invention And a resist laminate produced by executing the coating step, the pre-bake step, and the exposure step on each of the layers.
  • a development process for removing the resist at a portion not exposed in the exposure process with a developer to obtain the multilayer three-dimensional structure As a process to be executed, a development process for removing the resist at a portion not exposed in the exposure process with a developer to obtain the multilayer three-dimensional structure, and a hard baking process for heating the multilayer three-dimensional structure, It is characterized by having.
  • the manufacturing method according to the sixth aspect of the present invention is the manufacturing method according to the fifth aspect of the present invention, wherein the steps are repeatedly performed on each layer in the order from the other side to the one side.
  • a manufacturing method according to a seventh aspect of the present invention is the manufacturing method according to the fifth aspect or the sixth aspect of the present invention, wherein the step of performing the hard baking step is the step of the multilayer three-dimensional structure. It has the surface processing process which processes the surface of one side, It is characterized by the above-mentioned.
  • a manufacturing method according to an eighth aspect of the present invention is the manufacturing method according to any of the fifth to seventh aspects of the present invention, wherein the components of the resist applied in the coating step are in the respective layers. It is characterized by being identical.
  • a manufacturing method according to a ninth aspect of the present invention is the manufacturing method according to any of the fifth to eighth aspects of the present invention, wherein the exposure step comprises exposing light to the resist layer. It is a direct drawing process which performs local exposure continuously by irradiating while scanning.
  • An exposure data generating apparatus is to produce a multilayer structure by developing a resist laminate formed by repeatedly forming a resist layer and exposing the resist layer in each layer.
  • an exposure data generating apparatus that generates a plurality of exposure data, on the basis of design data representing the multilayer three-dimensional structure having an uneven surface on one side, the multilayer three-dimensional structure is formed in each layer in the depth direction.
  • Divided pattern generation means for generating a plurality of divided patterns expressing each pattern when divided, and a convex area including a convex surface on the one side and a concave area including a concave surface on the one side with respect to the plurality of divided patterns
  • a data generation means for generating a plurality of exposure data by setting, as an exposure area, a concave peripheral area located around the concave area. And butterflies.
  • An exposure data generation apparatus is the exposure data generation apparatus according to the tenth aspect of the present invention, wherein the data generation means is configured to apply the multilayer solid to the plurality of divided patterns.
  • the convex surface area, the concave surface area, and the concave surface peripheral area are set as exposure areas by changing the located concave surface peripheral area to an exposure area, and the plurality of exposure data is generated. And having processing and, the.
  • An exposure data generation apparatus is the exposure data generation apparatus according to the tenth aspect or the eleventh aspect of the present invention, wherein the exposure apparatus exposes the resist layer.
  • the upper limit of the deviation when the exposure position deviates from the reference exposure position is known in advance as the overlay accuracy, and the width of the area around the concave surface is 2 to 3 times the overlay accuracy. It is characterized by.
  • An exposure data generation apparatus is the exposure data generation apparatus according to any one of the tenth to twelfth aspects of the present invention, wherein the uneven surface has a plurality of recesses.
  • the relatively wide recesses of the plurality of recesses are relatively shallow, and the relatively narrow recesses of the plurality of recesses are relatively deep.
  • the exposure data generation program according to the fourteenth aspect of the present invention is installed in a computer and executed in the memory by the CPU, so that the computer according to any of the tenth to thirteenth aspects of the present invention is applied. It functions as an exposure data generation device.
  • the manufacturing system develops a resist laminate formed by repeatedly forming a resist layer and exposing the resist layer in each layer, and has a multilayer structure having an uneven surface on one side.
  • a manufacturing system for manufacturing a structure, the exposure data generating apparatus according to any one of the tenth to thirteenth aspects of the present invention, a coating apparatus for coating a resist to form a resist layer, and the resist layer A heating device that heats the resist layer, an exposure device that exposes the resist layer, and a developing device that removes the resist at a location that has not been exposed by the exposure device with a developer.
  • a manufacturing system according to a sixteenth aspect of the present invention is the manufacturing system according to the fifteenth aspect of the present invention, comprising a surface processing device for processing the surface of the one side of the multilayer structure. To do.
  • a manufacturing system according to a seventeenth aspect of the present invention is the manufacturing system according to the fifteenth aspect or sixteenth aspect of the present invention, wherein the components of the resist applied by the coating apparatus are the same in each of the layers. It is characterized by.
  • a manufacturing system is the manufacturing system according to any one of the fifteenth to seventeenth aspects of the present invention, wherein the exposure apparatus applies exposure light to the resist layer. It is characterized by being a direct drawing apparatus that continuously performs local exposure by irradiating while scanning.
  • a multilayer structure is produced by developing a resist laminate formed by repeatedly forming a resist layer and selectively exposing the resist layer in each layer. For this reason, according to each exposure pattern about each resist layer, the depth of each recessed part in an uneven surface can be adjusted separately.
  • the exposure area of the exposure data includes a convex area, a concave area, and a concave peripheral area. For this reason, even when both of the two resist layers are exposed in a shifted manner, an unintended step difference is suppressed from occurring on the uneven surface of the multilayer three-dimensional structure.
  • FIG. 3 is a view of each divided pattern after the first processing as seen from the AA cross section of FIG. 2.
  • FIG. 3 is a view of each divided pattern after the second processing as seen from the AA cross section of FIG. 2. It is a figure which shows the division
  • FIG. 10 is a view of each divided pattern after the third processing as seen from the AA cross section of FIG. 2.
  • FIG. 3 is a view of a manufacturing process of a multilayer three-dimensional structure as seen from the AA cross section of FIG.
  • FIG. 3 is a view of a manufacturing process of a multilayer three-dimensional structure as seen from the AA cross section of FIG.
  • FIG. 3 is a view of a manufacturing process of a multilayer three-dimensional structure as seen from the AA cross section of FIG.
  • FIG. 3 is a view of a manufacturing process of a multilayer three-dimensional structure as seen from the AA cross section of FIG.
  • FIG. 3 is a view of a manufacturing process of a multilayer three-dimensional structure as seen from the AA cross section of FIG.
  • FIG. 3 is a view of a manufacturing process of a multilayer three-dimensional structure as seen from the AA cross section of FIG.
  • FIG. 3 is a view of a manufacturing process of a multilayer three-dimensional structure
  • FIG. 3 is a view of a manufacturing process of a multilayer three-dimensional structure as seen from the AA section of FIG.
  • FIG. 3 is a view of a manufacturing process of a multilayered three-dimensional structure according to a comparative example as seen from the AA cross section of FIG. 2 when a deviation occurs in the exposure position.
  • FIG. 3 is a view of a manufacturing process of a multilayered three-dimensional structure according to a comparative example as seen from the AA cross section of FIG. 2 when a deviation occurs in the exposure position.
  • FIG. 3 is a view of a manufacturing process of a multilayered three-dimensional structure according to a comparative example as seen from the AA cross section of FIG. 2 when a deviation occurs in the exposure position.
  • FIG. 3 is a view of a manufacturing process of a multilayered three-dimensional structure according to a comparative example as seen from the AA cross section of FIG. 2 when a deviation occurs in the exposure position.
  • FIG. 3 is a view of a manufacturing process of a multilayered three-dimensional structure according to a comparative example as seen from the AA cross section of FIG. 2 when a deviation occurs in the exposure position.
  • FIG. 3 is a view of a manufacturing process of a multilayered three-dimensional structure according to a comparative example as seen from the AA cross section of FIG. 2 when a deviation occurs in the exposure position.
  • FIG. 3 is a view of a manufacturing process of a multilayered three-dimensional structure according to the present embodiment as seen from the AA cross section of FIG. 2 when a deviation occurs in the exposure position.
  • FIG. 3 is a view of a manufacturing process of a multilayered three-dimensional structure according to the present embodiment as seen from the AA cross section of FIG. 2 when a deviation occurs in the exposure position.
  • FIG. 3 is a view of a manufacturing process of a multilayered three-dimensional structure according to the present embodiment as seen from the AA cross section of FIG. 2 when a deviation occurs in the exposure position.
  • FIG. 3 is a view of a manufacturing process of a multilayered three-dimensional structure according to the present embodiment as seen from the AA cross section of FIG. 2 when a deviation occurs in the exposure position.
  • FIG. 3 is a view of a manufacturing process of a multilayered three-dimensional structure according to the present embodiment as seen from the AA cross section of FIG. 2 when a deviation occurs in the exposure position.
  • FIG. 3 is a view of a manufacturing process of a multilayered three-dimensional structure according to the present embodiment as seen from the AA cross section of FIG. 2 when a deviation occurs in the exposure position.
  • FIG. 1 is a flowchart showing the flow of exposure data generation processing for generating a plurality of exposure data and manufacturing processing for manufacturing the multilayer three-dimensional structure 100. Steps S1 and S2 in FIG. 1 show the steps of the exposure data generation process, and steps S3 to S10 in FIG. 1 show the steps of the manufacturing process.
  • FIG. 2 is a perspective view showing an example of the multilayer three-dimensional structure 100 manufactured by the flow of FIG.
  • the multilayer structure 100 of the present embodiment is a structure in which four resist layers 51 to 54 are laminated on the main surface on the + Z side of the substrate 50, and the uneven surface 110 is formed on the + Z side.
  • the concavo-convex surface 110 includes a rectangular first recess 111 having a long side in the Y direction in the XY plan view, an L-shaped second recess 112 having a long side in the Y direction in the XY plan view, and an XY plan view.
  • the circular third recesses 113 are arranged along the X direction.
  • the layers are called in order, they are called the first layer to the fourth layer in order from the ⁇ Z side layer to the + Z side layer.
  • the uppermost surface (upper surface of the fourth layer) of the concavo-convex surface 110 is referred to as a convex surface 110a
  • the portion of the concavo-convex surface 110 that is recessed from the convex surface 110a is referred to as a concave surface 110b.
  • the first recess 111 is a recess having a depth corresponding to three layers. That is, the concave surface 110b of the first concave portion 111 is located at the boundary between the first layer and the second layer.
  • the second recess 112 is a recess having a depth corresponding to two layers. That is, the concave surface 110b of the second concave portion 112 is located at the boundary between the second layer and the third layer.
  • the third recess 113 is a recess having a depth corresponding to one layer. That is, the concave surface 110b of the third recess 113 is located at the boundary between the third layer and the fourth layer.
  • FIG. 3 is a block diagram showing an electrical configuration of the exposure data generation apparatus 7 that executes the exposure data generation process.
  • the exposure data generation device 7 is configured by a general computer in which, for example, a CPU 71, a ROM 72, a RAM 73, a storage device 74, and the like are interconnected via a bus line 75.
  • the ROM 72 stores an operating system and the like, and the RAM 73 is used as a work area when the CPU 71 performs predetermined processing.
  • the storage device 74 is configured by a nonvolatile storage device such as a flash memory or a hard disk device.
  • the input unit 76, the display unit 77, the communication unit 78, and the reading unit 79 are also connected to the bus line 75.
  • the input unit 76 includes various switches, a touch panel, and the like, and receives various inputs from the operator.
  • the display unit 77 includes a liquid crystal display device, a lamp, and the like, and displays various types of information under the control of the CPU 71.
  • the communication unit 78 has a data communication function via wire or wireless.
  • the reading unit 79 reads data recorded on a recording medium readable by an inserted computer, for example, a CD, a DVD, or a USB memory.
  • the program P (exposure data generation program) is installed in the exposure data generation device 7 and is executed in the RAM 73 (memory) by the CPU 71, so that the division pattern generation means that is a functional part of the exposure data generation device 7 executes step S1. Then, the data generation means that is a functional part of the exposure data generation device 7 executes step S2. Thereby, exposure data generation processing is executed.
  • the program P may be read into the exposure data generation device 7 wirelessly. Further, the recording medium RM that records the program P so as to be readable by the computer may be read by the reading unit 79 and the program P may be read by the exposure data generating device 7.
  • Step S1 division pattern generation step.
  • the multilayer three-dimensional structure 100 is a three-dimensional structure composed of four layers, four division patterns are generated in step S1.
  • step S2 data generation step
  • the first process is performed. Specifically, for the four division patterns obtained in the division pattern generation step, the existence area of the multilayer three-dimensional structure 100 is set as the exposure area 90, and the non-existence area of the multilayer three-dimensional structure 100 is designated as the non-exposure area 91.
  • Is set. 4 to 7 are diagrams showing the four divided patterns 11 to 14 after the first processing in the order of the first layer to the fourth layer.
  • the first concave portion 111 to the third concave portion 113 are not formed in the first layer of the multilayer three-dimensional structure 100.
  • the entire region of the first layer becomes the existence region of the multilayer three-dimensional structure 100.
  • the entire first layer area is set as the exposure area 90.
  • the first recess 111 is formed in the second layer of the multilayer structure 100, and the second recess 112 and the third recess 113 are not formed.
  • the region where the first recess 111 is formed in the entire region of the second layer is a non-existing region of the multilayer three-dimensional structure 100, and the remaining region of the entire region of the second layer is the existing region of the multilayer three-dimensional structure 100. It becomes. Therefore, in the divided pattern 12, the non-existing area is set as the non-exposed area 91 among the entire area of the second layer, and the existing area is set as the exposed area 90 of the entire area of the second layer.
  • the first recess 111 and the second recess 112 are formed in the third layer of the multilayer three-dimensional structure 100, and the third recess 113 is not formed.
  • the region where the first concave portion 111 and the second concave portion 112 are formed in the entire region of the third layer is a non-existing region of the multilayer three-dimensional structure 100, and the remaining region of the entire third layer region is the multilayer solid This is the region where the structure 100 exists.
  • the non-existing area is set as the non-exposed area 91 among the entire area of the third layer, and the existing area is set as the exposed area 90 among all the areas of the third layer.
  • a first recess 111 to a third recess 113 are formed in the fourth layer of the multilayer structure 100.
  • the region where the first recesses 111 to the third recess 113 are formed in the entire region of the fourth layer is a non-existing region of the multilayer three-dimensional structure 100, and the remaining region of the entire region of the fourth layer is the multilayer solid. This is the region where the structure 100 exists. Therefore, in the divided pattern 14, the non-existing area is set as the non-exposed area 91 among the entire areas of the fourth layer, and the existing area of the all areas of the fourth layer is set as the exposed area 90.
  • FIG. 8 is a view of the divided patterns 11 to 14 as viewed from the AA cross section of FIG. 2 at the time after the first processing.
  • the second process is performed. Specifically, the area where the exposure area 90 is set also in the upper layer (+ Z side layer) of each exposure area 90 after the first processing is changed to a non-exposure area 91.
  • 9 to 12 are diagrams showing the four divided patterns 21 to 24 after the second processing in the order of the first layer to the fourth layer.
  • a region including the convex surface 110a on the + Z side is referred to as a convex surface region 90a
  • a region including the concave surface 110b on the + Z side is referred to as a concave surface region 90b.
  • the exposure region 90 in the divided pattern 21 is a concave region 90 b including the concave surface 110 b of the first concave portion 111 on the + Z side.
  • the exposure region 90 in the divided pattern 22 is a concave region 90 b including the concave surface 110 b of the second concave portion 112 on the + Z side.
  • the exposure region 90 in the divided pattern 23 is a concave region 90 b including the concave surface 110 b of the third concave portion 113 on the + Z side.
  • the divided pattern 24 is the same pattern as the divided pattern 14.
  • the exposure region 90 in the divided pattern 24 is a convex surface region 90a including a convex surface 110a on the + Z side.
  • FIG. 13 is a view of the divided patterns 21 to 24 at the time after the second processing as seen from the AA cross section of FIG.
  • the third process is performed next. Specifically, an area located around the concave surface area 90 b in each non-exposed area 91 after the second processing is changed to the exposure area 90.
  • 14 to 17 are diagrams showing the four divided patterns 31 to 34 after the third process in the order of the first layer to the fourth layer.
  • an area located around the concave surface 110b in each divided pattern is referred to as a concave peripheral area 90c.
  • the concave peripheral area 90c located around the concave area 90b in the non-exposure area 91 of the split pattern 21 is changed to the exposure area 90, and the split pattern 21 is changed to the split pattern 31. Is done.
  • the concave surrounding area 90 c is a rectangular annular area having a long side in the Y direction.
  • the concave peripheral area 90c located around the concave area 90b in the non-exposure area 91 of the split pattern 22 is changed to the exposure area 90, and the split pattern 22 is changed to the split pattern 32. And changed.
  • the concave peripheral region 90 c is an L-shaped annular region having a long side in the Y direction.
  • the concave peripheral area 90c located around the concave area 90b in the non-exposed area 91 of the split pattern 23 is changed to the exposure area 90, and the split pattern 23 is changed to the split pattern 33. And changed.
  • the concave surrounding area 90c is an annular area.
  • the divided pattern 34 is the same pattern as the divided patterns 14 and 24.
  • FIG. 18 is a view of the divided patterns 31 to 34 at the time after the third process, as viewed from the AA cross section of FIG.
  • the data of the four divided patterns 31 to 34 generated in the first process to the third process become the four exposure data given to the exposure apparatus during the manufacturing process of the multilayer three-dimensional structure 100.
  • the overlay accuracy of the exposure apparatus is known in advance before the third process, and the width W40 of the concave surrounding area 90c is set to twice the overlay accuracy.
  • the overlay accuracy is an upper limit value of deviation when the exposure position when the resist layer is exposed deviates from the reference exposure position.
  • the overlay accuracy in Japanese Unexamined Patent Application Publication No. 2009-224523 and Japanese Unexamined Patent Application Publication No. 2014 are provided. This is the same concept as the overlay accuracy in Japanese Patent Application No. 103343.
  • the effect of setting the width W40 of the concave surrounding area 90c will be described in detail in ⁇ 1.4 Positional shift in exposure process> described later.
  • a manufacturing system for manufacturing the multilayer three-dimensional structure 100 develops a resist laminate formed by repeatedly forming a resist layer and exposing the resist layer in each layer, and has a three-dimensional three-dimensional structure having an uneven surface 110 on the + Z side.
  • 100 is a system for manufacturing 100.
  • This manufacturing system includes an exposure data generating device 7, a coating device that coats a resist to form a resist layer, a heating device that heats the resist layer, an exposure device that exposes the resist layer, and an exposure device that is not exposed.
  • a developing device that removes the resist at the spot with a developer, and a surface processing device that performs surface processing.
  • the manufacturing system may be configured by arranging these devices in a cluster system, or may be configured by arranging these devices in an inline system.
  • FIG. 19 to FIG. 24 are views showing the manufacturing process of the multilayer three-dimensional structure 100 as seen from the AA cross section of FIG.
  • the manufacturing process of the multilayer three-dimensional structure 100 when viewed from the AA cross section of FIG. 2 will be described.
  • the coating apparatus applies a negative resist to the main surface on one side (+ Z side) of the substrate 50 to form the first resist layer 51 on the substrate 50 (step S3).
  • This resist has transparency to exposure light used in the exposure apparatus.
  • the heating device heats the resist layer 51 to evaporate the solvent in the resist layer 51 (step S4: pre-baking step).
  • the exposure apparatus exposes the resist layer 51 based on the exposure data of the first layer among the four exposure data generated by the above-described exposure data generation process (step S5: exposure process).
  • a portion of the resist layer 51 corresponding to the exposure region 90 of the divided pattern 31 is exposed to become a development insoluble region 92. Further, the portion corresponding to the non-exposed area 91 of the divided pattern 31 in the resist layer 51 is not exposed and is maintained as the development soluble area 93.
  • the exposure apparatus is composed of, for example, a direct drawing apparatus that continuously performs local exposure by irradiating the resist layer with exposure light while scanning. In this case, the direct drawing process is executed in step S5, and it is not necessary to prepare a mask corresponding to each exposure data.
  • FIG. 19 is a diagram showing a manufacturing process of the multilayer three-dimensional structure 100 at this point.
  • Step S7 When Steps S3 to S6 are executed for the resist layer 51, it is determined whether or not there is a resist layer that has not yet been formed (Step S7). Here, since the resist layers 52 to 54 exist as resist layers not yet formed, the process branches to Yes in step S7.
  • Steps S3 to S6 are executed for the second resist layer 52 on the substrate 50.
  • a portion corresponding to the exposure region 90 of the divided pattern 32 in the resist layer 52 is exposed to become a development insoluble region 92.
  • the resist used in the present embodiment is transmissive to exposure light.
  • the resist layer 51 which is the lower layer of the resist layer 52, is also exposed at a portion corresponding to the exposure region 90 of the divided pattern 32 to become a development insoluble region 92.
  • the portion corresponding to the non-exposed area 91 of the divided pattern 32 in the resist layer 52 is not exposed and is maintained as the development soluble area 93.
  • the resist layer 52 is heated, and the solvent in the resist layer 52 evaporates.
  • FIG. 20 is a diagram illustrating a manufacturing process of the multilayered three-dimensional structure 100 at this point.
  • Step S7 When Steps S3 to S6 are executed for the resist layer 52, it is determined whether or not there is a resist layer that has not yet been formed (Step S7). Here, since the resist layers 53 and 54 exist as resist layers not yet formed, the process branches to Yes in step S7.
  • FIG. 21 is a diagram showing a manufacturing process of the multilayer structure 100 when Steps S3 to S6 are performed on the resist layer 53.
  • FIG. 22 is a diagram showing a manufacturing process of the multilayer structure 100 when Steps S3 to S6 are performed on the resist layer.
  • the resist laminate 57 is generated by executing steps S3 to S6 for each layer in the order from the ⁇ Z side to the + Z side. Then, it is determined whether or not there is a resist layer that has not yet been formed (step S7). Since all the resist layers 51 to 54 are formed here, the process branches to No in step S7.
  • the developing device removes the resist in the development soluble region 93 of the resist laminated body 57 with the developer to obtain the multilayer three-dimensional structure 100 (step S8: development step). At this point, the multilayer three-dimensional structure 100 is obtained, but the strength of the multilayer three-dimensional structure 100 is increased by performing steps S9 and S10 in the manufacturing process.
  • FIG. 23 is a diagram illustrating a manufacturing process of the multilayered three-dimensional structure 100 at this point.
  • the multilayer three-dimensional structure 100 that is, the multilayer three-dimensional structure 100 corresponding to FIG. 23
  • the next surface processing step is drawn. Yes.
  • the surface processing apparatus processes the surface on the + Z side of the multilayer three-dimensional structure 100 and covers the surface with the protective film 55 (step S10: surface processing step).
  • a film such as a plating film or a diamond-like carbon film is formed as the protective film 55.
  • FIG. 24 is a diagram showing the multilayer three-dimensional structure 100 manufactured by steps S1 to S10.
  • the multi-dimensional three-dimensional structure 100 is developed by developing the resist laminate 57 that is generated by repeatedly forming a resist layer and selectively exposing the resist layer in each layer. Manufacturing. For this reason, the depth of each recessed part in the uneven
  • the multilayer three-dimensional structure 100 is used as, for example, an intaglio in printing processing.
  • a relatively wide recess is formed relatively shallow among the plurality of recesses, and a relatively narrow recess among the plurality of recesses is relatively It is desirable to be formed deeply. This is because, when the ink filled in each recess is transferred to a transfer roll or the like, variation in the ink transfer ratio in each recess is suppressed.
  • the width of the concave portion means a width in a short direction in a plan view of the concave portion as viewed from above. As shown in FIG.
  • the third recess 113 having a relatively wide width W30 is formed relatively shallow, and the second recess 112 having an intermediate width W20 is set to an intermediate depth.
  • the first concave portion 111 having a relatively narrow width W10 is formed relatively deep. For this reason, from the above viewpoint, variation during transfer is suppressed, which is desirable.
  • the adhesion between the base material 50 and the resist layers 51 to 54 is increased, desirable.
  • the components of the resist applied by the coating apparatus are the same in each layer as in this embodiment, compared to the embodiment in which the components of the resist are different in each layer as in the technique described in JP 2012-208350 A.
  • the manufacturing process of the multilayer structure 100 is facilitated, and the manufacturing cost is also suppressed.
  • the resist is applied to each resist layer as in the technique described in JP 2012-208350 A. Compared to an aspect in which exposure light having different wavelengths corresponding to the components is irradiated, the manufacturing process of the multilayer structure 100 is facilitated, and the manufacturing cost is also suppressed.
  • the difference in the manufacturing process between the present embodiment and the comparative example will be described assuming that a positional deviation occurs in the exposure process.
  • the first resist layer 51 is exposed at the reference exposure position
  • the second resist layer 52 is exposed with a deviation of the overlay accuracy in the ⁇ X direction from the reference exposure position
  • the third resist layer 53 is exposed. Is assumed to be shifted from the reference exposure position in the + X direction by the overlay accuracy
  • the fourth resist layer 54 is exposed from the reference exposure position by the overlay accuracy in the ⁇ X direction.
  • the exposure process is executed using the data of the divided patterns 11 to 14 shown in FIG. 8 as exposure data.
  • 25 to 29 are views of the manufacturing process of the multilayer three-dimensional structure 100A as seen from the AA cross section of FIG.
  • steps S3 to S6 are executed for the first resist layer 51A on the substrate 50.
  • a portion corresponding to the exposure region 90 of the divided pattern 11 in the resist layer 51A is exposed to become a development insoluble region 92.
  • the resist layer 51A is heated, and the solvent in the resist layer 51A evaporates.
  • FIG. 25 is a diagram showing a manufacturing process of the multilayer three-dimensional structure 100A at this point.
  • Step S7 When Steps S3 to S6 are executed for the resist layer 51A, it is determined whether or not there is a resist layer that has not yet been formed (Step S7).
  • the process branches to Yes in step S7.
  • Steps S3 to S6 are similarly performed for the second to fourth resist layers 52A to 54A on the base material 50.
  • the exposure process is executed with a deviation of the overlay accuracy in the ⁇ X direction from the reference exposure position.
  • FIG. 26 is a diagram showing a manufacturing process of the multilayer structure 100 when Steps S3 to S6 are performed on the resist layer 52A.
  • FIG. 27 is a diagram showing a manufacturing process of the multilayer structure 100 when Steps S3 to S6 are performed on the resist layer 53A.
  • FIG. 28 is a diagram showing a manufacturing process of the multilayer structure 100 when Steps S3 to S6 are performed on the resist layer 54A.
  • steps S3 to S6 are executed for each layer in the order from the ⁇ Z side to the + Z side, whereby the resist laminate 57A is generated (FIG. 28). Then, it is determined whether or not there is a resist layer that has not yet been formed (step S7). Here, since all the resist layers 51A to 54A are formed, the process branches to No in step S7.
  • the developing device removes the resist in the development soluble region 93 of the resist laminate 57A with a developer to obtain the multilayer three-dimensional structure 100A (step S8: development step).
  • the heating device heats the multilayer three-dimensional structure 100A to evaporate the solvent in the multilayer three-dimensional structure 100A and the developer attached to the multilayer three-dimensional structure 100A (step S9: hard baking process).
  • FIG. 29 is a diagram showing a manufacturing process of the multilayer three-dimensional structure 100A at this point.
  • the multilayer three-dimensional structure 100A thus manufactured includes the first concave portion 111A to the third concave portion 113A on the concave and convex surface 110A.
  • the uneven surface 110A is different from the shape of the uneven surface 110 in the multilayer three-dimensional structure 100 when an ideal exposure process without positional deviation is executed. This is because the shape of the development soluble region 93 in the resist laminate 57 ⁇ / b> A becomes incompatible with the shape of the concavo-convex surface 110 due to the displacement of the exposure position.
  • the manufacturing method of the comparative example cannot manufacture a multilayer three-dimensional structure having a desired uneven surface 110 when a deviation occurs in the exposure position.
  • the exposure process is executed using the data of the divided patterns 31 to 34 shown in FIG. 18 as exposure data.
  • 30 to 35 are views showing the manufacturing process of the multilayer three-dimensional structure 100B as seen from the AA cross section of FIG.
  • steps S3 to S6 are executed for the first resist layer 51B on the substrate 50.
  • a portion corresponding to the exposure region 90 of the divided pattern 31 in the resist layer 51B is exposed to become a development insoluble region 92.
  • the portion corresponding to the non-exposed area 91 of the divided pattern 31 in the resist layer 51B is not exposed and is maintained as the development soluble area 93.
  • the resist layer 51B is heated, and the solvent in the resist layer 51B evaporates.
  • FIG. 30 is a diagram showing a manufacturing process of the multilayer three-dimensional structure 100B at this point.
  • Step S7 When Steps S3 to S6 are executed for the resist layer 51B, it is determined whether or not there is a resist layer that has not yet been formed (Step S7). Here, since the resist layers 52B to 54B exist as resist layers not yet formed, the process branches to Yes in step S7.
  • Steps S3 to S6 are similarly performed for the second to fourth resist layers 52B to 54B on the base material 50.
  • the exposure process is executed with a deviation of the overlay accuracy in the ⁇ X direction from the reference exposure position.
  • FIG. 31 is a diagram showing a manufacturing process of the multilayer three-dimensional structure 100B at the time when Steps S3 to S6 are performed on the resist layer 52B.
  • FIG. 32 is a diagram showing a manufacturing process of the multilayer three-dimensional structure 100B at the time when Steps S3 to S6 are performed on the resist layer 53B.
  • FIG. 33 is a diagram showing a manufacturing process of the multilayer three-dimensional structure 100B when Steps S3 to S6 are performed on the resist layer 54B.
  • steps S3 to S6 are executed for each layer in the order from the ⁇ Z side to the + Z side, whereby the resist laminate 57B is generated (FIG. 33). Then, it is determined whether or not there is a resist layer that has not yet been formed (step S7). Here, since all the resist layers 51B to 54B are formed, the process branches to No in step S7.
  • the developing device removes the resist in the development soluble region 93 of the resist laminate 57B with a developer to obtain the multilayer three-dimensional structure 100B (step S8: development step).
  • the heating device heats the multilayer three-dimensional structure 100B to evaporate the solvent in the multilayer three-dimensional structure 100B and the developer attached to the multilayer three-dimensional structure 100B (step S9: hard baking process).
  • FIG. 34 is a diagram showing a manufacturing process of the multilayer three-dimensional structure 100B at this point.
  • the position of the concavo-convex surface 110B of the multilayer structure 100B manufactured in this way deviates from the ideal position (position of the concavo-convex surface 110) as the exposure position of the uppermost fourth layer is displaced. Formed. However, as can be seen from FIGS. 23 and 34, the shape of the uneven surface 110B of the multilayer three-dimensional structure 100B matches the ideal shape of the uneven surface 110.
  • the exposure area 90 of the exposure data does not include other areas other than the convex surface area 90a, the concave surface area 90b, and the concave surface surrounding area 90c. Even in such a case, it is possible to suppress unintended steps.
  • the exposure region 90 includes the other region, the fourth resist layer 54A is exposed to be shifted in the ⁇ X direction with respect to the third resist layer 53A. 2 An unintended step is formed in the recess 112A (FIGS. 27 to 29).
  • the number of exposure areas is suppressed because the exposure area 90 includes only the convex area 90a, the concave area 90b, and the concave surrounding area 90c.
  • the surface processing apparatus processes the surface on the + Z side of the multilayer three-dimensional structure 100B and covers the surface with the protective film 55B (step S10: surface processing step).
  • a film such as a plating film or a diamond-like carbon film is formed as the protective film 55B.
  • FIG. 35 is a diagram showing a multilayer three-dimensional structure 100B manufactured by steps S1 to S10.
  • the aspect of manufacturing the multilayered three-dimensional structure 100 (FIG. 2) having a simple shape has been described.
  • various types of multilayered three-dimensional structures can be manufactured according to the present invention.
  • the layer thickness of each resist layer does not need to be constant.
  • the width W40 of the concave surrounding area 90c is twice the overlay accuracy
  • the present invention is not limited to this.
  • the width of the concave peripheral region is at least twice the overlay accuracy.
  • setting a wide exposure area causes an unintended step in the multilayer structure to be manufactured, and therefore the width of the concave peripheral area may be three times or less of the overlay accuracy. desirable.
  • the multilayer structure 100 to be manufactured is formed of four resist layers.
  • the manufactured multilayer three-dimensional structure 100 may be composed of three or less resist layers, or may be composed of five or more resist layers.
  • the present invention is particularly effective when the number of layers is large, such as in the case of four or more layers, from the viewpoint of obtaining a multilayer three-dimensional structure having a desired concavo-convex surface even when the exposure position is shifted in each resist layer. It is.
  • the mode in which a plurality of exposure data is generated by performing the first process to the third process has been described.
  • the present invention is not limited to this. Even in a mode in which a plurality of exposure data is generated by another processing order, if the exposure area set in the exposure data includes a convex surface area, a concave surface area, and a concave peripheral area, the same effect as in the above embodiment is obtained. can get.
  • the post-baking step (step S6) has an effect of promoting the crosslinking reaction of the heated resist layer and improving the adhesion between the resist layer and its upper and lower layers.
  • the post-baking step (step S6) may be omitted.
  • the exposure data generation method, the manufacturing method, the exposure data generation device, the exposure data generation program, and the manufacturing system have been described.
  • the present invention can be freely combined with each embodiment, modified with any component in each embodiment, or omitted with any component in each embodiment.
  • Exposure Data Generation Device 11-14 21-24, 31-34 Divided Pattern 50 Base Material 51-54, 51A-54A, 51B-54B Resist Layer 55, 55A, 55B Protective Film 57, 57A, 57B Resist Layer 90 Exposure region 90a Convex region 90b Concave surface region 90c Concave surface region 91 Non-exposed region 92 Development insoluble region 93 Development soluble region 100, 100A, 100B Multi-layer structure 110, 110A, 110B Concave surface 111, 111A First recess 112, 112A First 2 recesses 113, 113A 3rd recess S1-S10 steps

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  • Engineering & Computer Science (AREA)
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  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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PCT/JP2015/083016 2015-03-30 2015-11-25 露光データ生成方法、製造方法、露光データ生成装置、露光データ生成プログラム、および、製造システム WO2016157611A1 (ja)

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KR1020177024361A KR20170108149A (ko) 2015-03-30 2015-11-25 노광 데이터 생성 방법, 제조 방법, 노광 데이터 생성 장치, 노광 데이터 생성 프로그램, 및, 제조 시스템

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