WO2016152308A1 - 塗布方法 - Google Patents
塗布方法 Download PDFInfo
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- WO2016152308A1 WO2016152308A1 PCT/JP2016/054173 JP2016054173W WO2016152308A1 WO 2016152308 A1 WO2016152308 A1 WO 2016152308A1 JP 2016054173 W JP2016054173 W JP 2016054173W WO 2016152308 A1 WO2016152308 A1 WO 2016152308A1
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- Prior art keywords
- substrate
- gas
- coating liquid
- coating
- peripheral edge
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/40—Distributing applied liquids or other fluent materials by members moving relatively to surface
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
- B05D1/005—Spin coating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/04—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02307—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a liquid
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Definitions
- the present invention relates to a coating method in which a coating solution is applied to a substrate such as a semiconductor substrate, a glass substrate for liquid crystal display, a glass substrate for photomask, and a substrate for optical disk.
- the coating apparatus includes a holding rotation unit that holds and rotates the substrate, and a coating nozzle that discharges a coating liquid such as photoresist (hereinafter referred to as “resist”) onto the substrate held by the holding rotation unit. ing.
- the coating apparatus discharges the coating liquid onto the substrate with the coating nozzle, and rotates the substrate with the rotation holding unit. By the rotation of the substrate, the coating liquid on the substrate is spread, and a liquid film (coating liquid film) of the coating liquid is formed on the substrate (see, for example, Patent Documents 1 and 2).
- Patent Document 1 describes an edge rinse technique in which a solvent is discharged to a resist film at a peripheral portion of a substrate to dissolve the resist film, and the dissolved resist film is scattered out of the substrate by a blowing unit. Yes.
- Patent Document 2 after rinsing the peripheral edge of a wafer on which a thin film is formed, the rising portion of the peripheral edge of the thin film by edge rinsing is flattened by blowing N 2 gas to the peripheral edge of the wafer.
- Patent Document 3 describes an edge rinse technique in which gas is blown to the edge portion of a substrate on which an undried coating film is formed to accelerate drying. This method is a gas spraying performed after the coating film is formed, and even after the gas spraying, the portion other than the edge portion of the substrate remains undried.
- a solvent is supplied onto a substrate, a coating liquid is ejected onto the solvent film by an ink jet method, and finally, a gas is sprayed onto the uneven surface of the coating liquid to flatten the surface of the coating liquid. The method is described.
- JP 2013-187497 Japanese Patent Application Laid-Open No. 09-106980 JP 2003-181361 A JP 2013-078748 A
- etching resistance is required, and it is required to apply a thick coating liquid film (thick film) such as a resist.
- the viscosity of the coating solution was increased and fine adjustment was performed by changing the rotation speed (rotation speed: rpm) of the substrate.
- rotation speed rotation speed: rpm
- a number of problems occur, such as an increase in pump output, an increase in supply pipe diameter, an increase in drain pipe diameter, washing of the cup, and mixing of fine bubbles in the film. Therefore, it is required to obtain a thick film by adjusting the rotation speed while keeping the viscosity low without increasing the viscosity of the coating solution.
- the coating liquid film is formed thicker as the rotation speed is lower.
- the step of adjusting the coating solution film thickness is a step called main spin from the end of the discharge of the resist solution until the end of drying.
- the usable range of the main spin rotation speed is, for example, 800 to 2000 rpm. If it is smaller than this range, there is a problem that the uniformity of the coating liquid film thickness in the wafer surface is greatly deteriorated. That is, if the main spin is within the usable range, a coating liquid film having a uniform thickness is formed, but a liquid film having a sufficient thickness cannot be obtained.
- the main spin is set to a low speed rotation outside the usable range in order to make the liquid film even thicker, the centrifugal force acting on the coating liquid on the substrate is significantly reduced, so that the coating liquid is difficult to scatter from the peripheral edge of the substrate. Become.
- the coating liquid is dried while being accumulated at the peripheral edge of the substrate. Therefore, the coating liquid film becomes thick like a mountain at the peripheral edge of the substrate, and the uniformity of the coating liquid film thickness deteriorates.
- the present invention has been made in view of such circumstances, and an object of the present invention is to provide a coating method capable of making the thickness of the liquid film uniform while forming a liquid film of the coating film thick by rotation. To do.
- the coating method according to the present invention includes a step of discharging a coating liquid onto a substrate by a coating nozzle, a rotation of the substrate by a holding rotation unit to form a liquid film of the coating liquid on the substrate, and a surplus The step of pushing at least a part of the coating solution toward the peripheral portion of the substrate by centrifugal force accompanying the rotation of the substrate, and raising the excess coating solution along the peripheral portion of the substrate; Before the drying of the coating solution on the substrate is completed, a gas spraying step of spraying gas toward the peripheral portion of the substrate by a gas nozzle and discharging the excess coating liquid rising on the peripheral portion to the outside of the substrate; It is characterized by providing.
- the substrate is rotated by the holding rotating unit to form a liquid film of the coating liquid on the substrate, and at least a part of the excess coating liquid is formed by the centrifugal force accompanying the rotation of the substrate.
- the excess coating liquid is swelled along the peripheral edge of the substrate.
- gas is blown toward the peripheral edge of the substrate by the gas nozzle, and excess coating liquid that rises to the peripheral edge is discharged out of the substrate.
- a preferred example of the above-described coating method is that, in the step of raising the coating solution, the rotation speed of the substrate that raises the excess coating solution is 500 rpm or less. By rotating at 500 rpm or less, the thickness of the liquid film can be made uniform while forming a thick liquid film of the coating liquid.
- An example of the above-described coating method is that, in the gas spraying step, the substrate is rotated by the gas nozzle before the drying of the coating liquid on the substrate is completed by the rotation of the substrate and after the discharge of the coating liquid is completed.
- the gas is blown toward the peripheral edge of the. If gas is sprayed while the coating liquid is being discharged onto the substrate, both the coating liquid discharge and the gas spraying must be controlled. However, since the gas is blown after the discharge of the coating liquid is completed, it is only necessary to control one of the coating liquid discharge and the gas blowing, so that the control can be simplified.
- an example of the above-described coating method is that the substrate is rotated at a rotational speed at which the excess coating liquid is raised before the drying of the coating liquid on the substrate is completed by the rotation of the substrate. After that, the gas is blown toward the peripheral edge of the substrate by the gas nozzle. Since the gas is sprayed in a certain stable state after the substrate is rotated at a rotational speed at which the excess coating liquid is raised, the control of the gas spraying can be simplified.
- an example of the above-described coating method is to spray gas at a preset time by the gas nozzle in the gas spraying step. Corresponding to the time when the gas is blown, the surplus coating liquid rising on the peripheral edge of the substrate can be discharged out of the substrate.
- an example of the above-described coating method is to spray gas at a preset pressure by the gas nozzle in the gas spraying step.
- surplus coating liquid rising on the peripheral edge of the substrate can be discharged out of the substrate.
- an example of the above-described coating method is to spray gas at a plurality of times set in advance by the gas nozzle in the gas spraying step in the gas spraying step. For example, by controlling the number of times of gas spraying at a preset time, it is possible to control the amount of excess coating liquid that is discharged out of the substrate. Moreover, a change can be given to blowing of gas by spraying gas intermittently.
- an example of the above-described coating method is that the opening of the gas nozzle is circular. Since gas can be sprayed at a point, it becomes easy to discharge excess coating liquid from the substrate.
- an example of the above-described coating method is to spray the gas from the gas nozzle to the peripheral edge of the substrate and from the inside to the outside of the substrate in the gas spraying step. Thereby, the coating liquid collected on the peripheral edge of the substrate can be effectively discharged out of the substrate.
- the example of the above-described coating method further includes a step of performing edge rinsing on the coating solution film on the peripheral portion of the substrate after the drying of the coating solution film on the substrate is completed by rotation. That is.
- a flatter coating liquid film can be formed.
- a uniform thick film can be formed by discharging a surplus coating liquid that rises on the peripheral edge of the substrate by blowing gas.
- an example of the above-described coating method is that the position of the gas nozzle is fixed in the gas spraying step. Thereby, control of a gas nozzle can be simplified.
- an example of the coating method described above is that, in the gas spraying step, the gas nozzle is movable in a radial direction of the substrate and with a preset width of the peripheral edge of the substrate. Thereby, the spray position of the gas toward the peripheral part of the substrate can be changed, and the discharge of the coating liquid accumulated on the peripheral part of the substrate can be promoted.
- the substrate is rotated by the holding rotating unit to form a liquid film of the coating liquid on the substrate, and at least a part of the excess coating liquid is formed by the centrifugal force accompanying the rotation of the substrate.
- the excess coating liquid is swelled along the peripheral edge of the substrate.
- gas is blown toward the peripheral edge of the substrate by the gas nozzle, and excess coating liquid that rises to the peripheral edge is discharged out of the substrate.
- FIGS. 4A and 4B are diagrams showing a gas nozzle spray port as viewed in the VV direction
- FIG. 5E is a diagram showing how the coating liquid film accumulated on the peripheral edge of the substrate is flattened by gas spray. .
- (A) is a figure which shows the coating liquid film thickness in the board
- (b) is a figure which shows the measurement position in the board
- (A), (b) is a figure for demonstrating an edge rinse process. It is a perspective view for demonstrating the gas spraying which concerns on a modification.
- FIG. 1 is a block diagram of a coating apparatus according to an embodiment.
- the coating apparatus 1 includes a holding rotation unit 2 that holds and rotates the substrate W in a substantially horizontal posture, a coating nozzle 3 that discharges a coating liquid RS such as a resist to the substrate W, and a gas GS to the substrate W. And a gas nozzle 4 to be sprayed.
- the coating apparatus 1 includes a pre-wet nozzle 5 that discharges a pre-wet liquid PW such as a solvent to the substrate W, and an edge rinse nozzle 6 that discharges an edge rinse liquid such as a solvent to the peripheral edge E of the substrate W. And.
- FIG. 1 the holding
- the holding rotation unit 2 includes, for example, a spin chuck 9 that holds the back surface of the substrate W by vacuum suction, and a rotation driving unit 10 that is configured by a motor or the like by rotating the spin chuck 9 around a rotation axis AX in a substantially vertical direction. I have.
- a cup 11 that can move up and down is provided around the holding rotation unit 2 so as to surround the side of the substrate W.
- Application nozzle 3, gas nozzle 4, pre-wet nozzle 5, and edge rinse nozzle 6 are each configured to be moved to predetermined positions in the horizontal and vertical directions by nozzle moving mechanism 13.
- the nozzle moving mechanism 13 selectively grips any one of the plurality of coating nozzles 3 and grips it between a standby position outside the substrate W and a predetermined position above the substrate W.
- the applied coating nozzle 3 is moved.
- the nozzle moving mechanism 13 is configured by a motor or the like.
- the coating liquid RS is supplied to the coating nozzle 3 from the coating liquid supply source 15 through the coating liquid piping 17.
- a suck back valve SV, an on-off valve V1, and a pump P1 are interposed.
- the on-off valve V1 supplies and stops the application liquid RS
- the suck back valve SV is combined with the operation of the on-off valve V1 to suck the application liquid RS in the application nozzle 3, and the sucked application liquid RS, etc.
- the pump P1 sends the coating liquid RS to the coating nozzle 3.
- each application nozzle 3 includes an application liquid supply source 15, an application liquid pipe 17, a suck back valve SV, an on-off valve V 1, and a pump P 1.
- the gas GS is supplied from the gas supply source 19 to the gas nozzle 4 through the gas pipe 21.
- An open / close valve V2 is interposed in the gas pipe 21.
- the on-off valve V2 supplies and stops the gas GS.
- an inert gas such as nitrogen, air, or other gas is used.
- the gas GS may be, for example, a gas containing a solvent vapor (vaporized solvent) of the coating liquid RS.
- the temperature of the gas may be adjusted by a temperature control mechanism (not shown).
- the blowing port 4a of the gas nozzle 4 is not a long and narrow opening such as a slit, but is substantially circular as shown in FIG.
- the substantially circular shape includes an ellipse and a polygon such as a regular polygon. Since the gas GS can be sprayed at the point, it is easy to discharge the excess coating liquid RS from the substrate W.
- the inner diameter of the piping of the gas nozzle 4, that is, the inner diameter of the gas GS outlet 4a is preferably 5 mm or less. Thereby, it becomes easy to discharge the excess coating liquid RS from the substrate W by spraying the gas GS on the peripheral edge E of the substrate W at a pinpoint.
- the pre-wet liquid PW is supplied to the pre-wet nozzle 5 from the pre-wet liquid supply source 23 through the pre-wet liquid pipe 25.
- an on-off valve V3 and a pump P3 are interposed in the pre-wet liquid pipe 25.
- the on-off valve V3 supplies and stops the pre-wet liquid PW, and the pump P3 sends the pre-wet liquid PW to the pre-wet nozzle 5.
- the edge rinse liquid is supplied from the edge rinse liquid supply source 27 to the edge rinse nozzle 6 through the edge rinse liquid pipe 29.
- an on-off valve V4 and a pump P4 are interposed in the edge rinse liquid pipe 29.
- the on-off valve V4 supplies and stops the edge rinse liquid, and the pump P4 sends the edge rinse liquid to the edge rinse nozzle 6.
- the coating apparatus 1 includes a control unit 31 configured with a central processing unit (CPU) and the like, and an operation unit 33 for operating the coating apparatus 1.
- the control unit 31 controls each component of the coating apparatus 1.
- the operation unit 33 includes a display unit such as a liquid crystal monitor, a storage unit such as a ROM (Read-only Memory), a RAM (Random-Access Memory), and a hard disk, and an input unit such as a keyboard, a mouse, and various buttons. I have.
- the storage unit stores various conditions for the coating process.
- FIG. 2 is a diagram illustrating the application operation timing.
- the substrate W is described as having a diameter of 300 mm, it may be of other sizes.
- the equilibrium state of the coating liquid RS that rises without being discharged out of the substrate W due to surface tension can be broken. Therefore, when the thick film is formed at a low speed, the thick film can be made uniform from the center part to the peripheral part E of the substrate W.
- the coating operation is performed from time t0 to time t14 in FIG. 2, and includes a pre-wetting process, a coating liquid discharge process, a coating liquid film RS thickness adjustment process (main spin), a gas spray process, and an edge rinse process.
- a transport mechanism (not shown) transports the substrate W to the holding rotation unit 2.
- the holding rotation unit 2 holds the back surface of the substrate W as shown in FIG.
- the nozzle moving mechanism 13 moves the pre-wet nozzle 5 to a predetermined position above the substrate W.
- the coating apparatus 1 discharges the pre-wet liquid PW from the pre-wet nozzle 5 as shown in FIG.
- the pre-wet liquid PW may be discharged while rotating the substrate W.
- the holding rotation unit 2 rotates the held substrate W at a preset rotation speed R1 (rpm).
- R1 rpm
- the pre-wet liquid PW discharged onto the substrate W is spread radially and a pre-wet liquid film PW is formed.
- the nozzle moving mechanism 13 arranges the application nozzle 3 at a predetermined position above the substrate W instead of the pre-wet nozzle 5.
- the coating apparatus 1 ejects the coating liquid RS onto the substrate W by the coating nozzle 3 as shown in FIG. 4A (start of ejection).
- the holding and rotating unit 2 increases the rotation speed and rotates the substrate W at a preset rotation speed R2.
- the coating liquid RS discharged onto the substrate W is spread radially. A part of the coating liquid RS is scattered outside the substrate W.
- the pre-wet liquid film PW is formed on the substrate W as described above, the coating liquid RS spreads quickly.
- the holding rotation unit 2 rotates the substrate W at a rotation speed R3 set in advance by reducing the rotation speed.
- the discharge of the coating liquid RS by the coating nozzle 3 is ended (stopped).
- the holding rotation unit 2 increases the rotation speed, rotates the substrate W at a preset rotation speed R4, and adjusts the thickness of the coating liquid film RS discharged onto the substrate W.
- the process from the end of discharging the coating liquid RS to the end of drying of the coating liquid RS is a process called main spin. That is, the main spin is a period during which the substrate W is rotated at the rotation speed R4.
- the coating liquid film RS thickness corresponding to the rotational speed R4 is obtained.
- the coating liquid film RS is formed on the substrate W by rotating the substrate W so as not to build up the excess coating liquid RS along the peripheral edge E of the rotating substrate W.
- the excess coating liquid RS is raised along the peripheral edge E of the substrate W by pushing the peripheral edge E of the substrate W by centrifugal force.
- the rotation of the substrate W at this time is performed at a rotation speed R4.
- movement which raises the above-mentioned excessive coating liquid RS is operation
- the coating apparatus 1 sprays the gas GS toward the peripheral edge E of the substrate W by the gas nozzle 4 as shown in FIG.
- FIG.5 (b) is the figure which expanded the gas spraying part of Fig.5 (a).
- the gas nozzle 4 provided above the substrate W blows the gas GS on the peripheral edge E of the substrate W and from the inside to the outside of the substrate W as shown in FIG. .
- the gas GS needs to be sprayed before the coating liquid film RS on the substrate W is dried by the rotation of the rotation speed R4, that is, while the coating liquid RS flows.
- the gas GS is sprayed with dots as shown in FIG.
- the nozzle moving mechanism 13 moves the gas nozzle 4 to a predetermined blowing position before blowing the gas GS.
- the main cause of the coating liquid RS staying on the peripheral edge E of the substrate W without being discharged out of the substrate W is the surface tension.
- the gas GS By spraying the gas GS, it is possible to break the equilibrium state of the coating liquid RS that rises without being discharged out of the substrate due to surface tension. Therefore, as shown in FIG. 5E, the excess coating liquid RS that rises at the peripheral edge E is discharged out of the substrate W, so that the thickness of the coating liquid film RS is increased while forming the coating liquid film RS thick by rotation. Can be made uniform.
- the rotation speed R4 of the substrate W that swells the excess coating solution RS is preferably greater than 0 rpm and less than or equal to 500 rpm, for example.
- the coating liquid film RS becomes abruptly thicker from the center of the substrate W toward the outside of 120 mm. This point will be described in detail.
- FIG. 6 is a diagram showing the thickness (average value) of the coating liquid film RS and the uniformity (3 ⁇ ) of the coating liquid film RS with respect to the rotation speed R4 in the case of a 300 mm wafer.
- the rotational speed R4 is 500 rpm or less, the thickness and uniformity (3 ⁇ ) of the coating liquid film RS are increased.
- the coating apparatus 1 is rotated before the drying of the coating liquid RS on the substrate W is completed.
- the gas GS is sprayed toward the peripheral edge E of the substrate W by the gas nozzle 4 to assist in discharging a part of the coating liquid RS accumulated in the peripheral edge E, but not all, out of the substrate W. That is, while the coating liquid film RS is undried and has fluidity, the gas GS is sprayed to discharge the excess coating liquid RS accumulated in the peripheral edge portion E to the outside of the substrate W.
- FIG. 7A is a diagram showing the thickness of the coating liquid film RS in the substrate when no gas is blown.
- FIG. 8 is a diagram showing the thickness of the coating liquid film RS in the substrate when there is gas spraying.
- the rotational speed R4 for adjusting the thickness of the coating liquid film RS is 100 rpm.
- the thickness of the coating liquid film RS is rapidly increased at a position away from the center of the substrate W (corresponding to “0” in the X direction).
- FIG. 8 it is suppressed that the thickness becomes large rapidly. Therefore, it can be seen that the thickness can be made uniform when the thick film is formed at low speed.
- the measurement position in the substrate W in FIG. 8 is the same as that in FIG. 7A and is shown in FIG. 7B.
- the coating liquid RS on the substrate W stops flowing due to the rotation at the rotation speed R4. Thereby, drying of coating liquid RS is complete
- the holding rotation unit 2 rotates the substrate W at a preset rotation speed R5 by reducing the rotation speed.
- the gas GS spraying is finished (stopped).
- the blowing of the gas GS may be ended at the end of drying (time t9), or may be ended by time t11 for discharging an edge rinse liquid described later.
- the nozzle moving mechanism 13 moves the edge rinse nozzle 6 to the discharge position.
- the coating apparatus 1 performs edge rinse on the coating liquid film RS on the peripheral edge E of the substrate W after the drying of the coating liquid film RS on the substrate W is completed by the rotation at the rotation speed R4. That is, during the period from time t11 to time t12 in FIG. 2, the coating apparatus 1 ejects the edge rinse liquid from the edge rinse nozzle 6 as shown in FIG. 9A, and as shown in FIG. 9B.
- the coating liquid film RS having a predetermined width on the peripheral edge E of the substrate W is removed.
- the holding rotation unit 2 increases the rotation speed and rotates the substrate W at a preset rotation speed R6. Thereby, the edge rinse liquid discharged on the substrate W by the edge rinse nozzle 6 is spin-dried.
- the holding rotating unit 2 stops the rotation of the substrate W.
- the substrate W is stopped.
- the holding rotating unit 2 releases the holding of the substrate W.
- the substrate W on the holding rotation unit 2 is transported to the next processing unit by a substrate transport mechanism (not shown).
- the holding rotating unit 2 rotates the substrate W at a rotation speed of, for example, 500 rpm or less to form the liquid film of the coating liquid RS on the substrate W, and at least one of the excess coating liquid RS.
- the portion is pushed toward the peripheral edge E of the substrate W by the centrifugal force accompanying the rotation of the substrate W, and the excess coating liquid RS is raised along the peripheral edge E of the substrate W.
- the gas GS is blown toward the peripheral edge E of the substrate W by the gas nozzle 4, and the excess coating liquid RS rising to the peripheral edge E is discharged out of the substrate W.
- the gas nozzle 4 By spraying the gas GS toward the peripheral edge E of the substrate W by the gas nozzle 4, it is possible to break the equilibrium state of the coating liquid RS that stays and rises without being discharged out of the substrate W due to surface tension. Therefore, the thickness of the liquid film can be made uniform while the liquid film of the coating liquid RS is formed thick by rotation.
- the gas nozzle 4 is directed toward the peripheral edge E of the substrate W.
- gas GS When the gas GS is sprayed while the coating liquid RS is being discharged onto the substrate W, both the discharge of the coating liquid RS and the gas spraying must be controlled. However, since the gas GS is blown after the discharge of the coating liquid RS, it is only necessary to control one of the discharge of the coating liquid RS and the gas blowing, so that the control can be simplified.
- the coating apparatus 1 sprays the gas GS to the peripheral edge E of the substrate W and from the inside to the outside of the substrate W by the gas nozzle 4. Thereby, the coating liquid RS collected on the peripheral edge E of the substrate W can be effectively discharged out of the substrate W.
- the coating apparatus 1 performs edge rinsing on the coating liquid film RS on the peripheral edge E of the substrate W after the coating liquid film RS on the substrate W is dried by rotation.
- edge rinsing By removing the coating liquid film RS on the peripheral edge E of the substrate W, which is relatively thick, by edge rinsing, a flatter coating liquid film RS can be formed.
- a uniform thick film can be formed by spraying the gas GS and discharging the excess coating liquid RS rising on the peripheral edge E of the substrate W.
- pattern formation can be carried out to the vicinity of the peripheral part E of the board
- the present invention is not limited to the above embodiment, and can be modified as follows.
- the position of the gas nozzle 4 is fixed when the gas is sprayed. Thereby, control of the gas nozzle 4 can be simplified.
- the gas nozzle 4 may be movable in the radial direction RD of the substrate W and with a preset width WD of the peripheral edge E of the substrate W as shown in FIG. That is, the gas nozzle 4 is scanned (reciprocated or moved one way) while blowing gas.
- the width WD may be, for example, the length between the inside and the outside of the ring-shaped swelled portion (shown by hatching with hatching) of the coating liquid RS that accumulates at the peripheral edge E. Further, it may be a narrower range. Further, the movement may be performed not only once but a plurality of times.
- the gas GS may be sprayed by the gas nozzle 4 at a preset time when the gas is sprayed. Accordingly, it is possible to discharge the excess coating liquid RS rising on the peripheral edge E of the substrate W to the outside of the substrate W in accordance with the time when the gas GS is sprayed.
- the preset time include a time from time t7 to time t10 in FIG.
- the gas GS may be sprayed by the gas nozzle 4 at a preset pressure when the gas is sprayed.
- surplus coating liquid RS rising on the peripheral edge E of the substrate W can be discharged out of the substrate W.
- the pressure is not a pressure that blows almost all of the coating liquid RS on the substrate W in the sprayed part, but a pressure that can break the equilibrium state of the coating liquid RS that has risen and stayed at the peripheral edge E due to surface tension. That's fine.
- the gas GS was blown once toward the peripheral edge E by the gas nozzle 4 as shown in FIG.
- the gas GS may be sprayed by the gas nozzle 4 at a plurality of preset times during gas spraying. For example, it is possible to control the amount of excess coating liquid RS discharged out of the substrate W by controlling the number of times of gas spraying in a preset unit time. Further, by intermittently blowing the gas GS, it is possible to change the blowing of the gas GS.
- the gas GS was sprayed on the peripheral edge E by the gas nozzle 4 as shown in FIG.
- the vicinity of the peripheral edge E may be used.
- the inner portion (mountain skirt) of the coating liquid RS that accumulates at the peripheral edge E may be used.
- the gas GS is blown by the gas nozzle 4 provided above the substrate W.
- gas may be blown from the gas nozzle 4 provided below the substrate W, for example, other than above.
- the gas GS is sprayed from the inside to the outside of the substrate W by the gas nozzle 4.
- the gas GS may be sprayed in a vertically downward direction other than the direction from the inner side to the outer side of the substrate W as long as the equilibrium state of the surface tension of the coating liquid RS accumulated in the peripheral edge E can be destroyed.
- the gas spraying was started at time t7 in FIG.
- the coating liquid RS pushed by the peripheral edge E can be discharged out of the substrate W sequentially.
- the gas spray may be in a certain stable state after rotating to a rotational speed R4 that swells excess coating liquid RS, for example, at time t8a in FIG. That is, at the time of gas spraying, before the drying of the coating liquid RS on the substrate W is completed by the rotation of the substrate W, and after the substrate W is rotated to the rotational speed R4 for exciting the excess coating liquid RS, the gas nozzle 4 A gas GS is sprayed toward the peripheral edge E of the substrate W. Since the gas GS is sprayed in a constant and stable state after the substrate W is rotated at the rotational speed R4 that swells the excess coating liquid RS, the control of the gas spraying can be simplified.
- the gas GS starts to be sprayed at time t7 in FIG.
- it may be at the start of discharge of the coating liquid RS (time t3), or may be at the end of discharge of the coating liquid RS (time t6).
- time t8 when the rotational speed R3 is increased to the rotational speed R4.
- the coating liquid RS reaches a part or all of the peripheral edge E by rotation after time t3. That is, spraying is started while the coating liquid RS before the drying of the coating liquid RS ends.
Abstract
Description
すなわち、本発明に係る塗布方法は、塗布ノズルにより基板上に塗布液を吐出する工程と、保持回転部により前記基板を回転させて前記基板上に前記塗布液の液膜を形成するとともに、余剰の塗布液の少なくとも一部を前記基板の回転に伴う遠心力により前記基板の周縁部に向けて押しやって前記基板の周縁部に沿って余剰の塗布液を盛り上げる工程と、前記基板の回転により前記基板上の前記塗布液の乾燥が終了する前に、ガスノズルにより前記基板の周縁部に向けてガスを吹き付けて、前記周縁部に盛り上がる余剰の塗布液を前記基板外に排出するガス吹き付け工程と、を備えることを特徴とするものである。
図1を参照する。塗布装置1は、略水平姿勢で基板Wを保持して回転させる保持回転部2と、基板Wに対してレジスト等の塗布液RSを吐出する塗布ノズル3と、基板Wに対してガスGSを吹き付けるガスノズル4とを備えている。また、塗布装置1は、基板Wに対して溶剤等のプリウェット液PWを吐出するプリウェットノズル5と、基板Wの周縁部Eに対して溶剤等のエッジリンス液を吐出するエッジリンスノズル6とを備えている。
次に、図2等を参照して、塗布装置1による塗布動作を説明する。図2は、塗布動作タイミングを例示する図である。なお、基板Wは、直径300mmのもので説明するが、その他の大きさのものであってもよい。
図2の時間t1から時間t2までの間において、塗布装置1は、図3(a)のように、プリウェットノズル5からプリウェット液PWを吐出する。なお、プリウェット液PWの吐出は、基板Wを回転させながら行ってもよい。
図2の時間t3において、塗布装置1は、図4(a)のように、塗布ノズル3により基板W上に塗布液RSを吐出する(吐出の開始)。図2の時間t4において、保持回転部2は、回転速度を上げて、予め設定された回転速度R2で基板Wを回転させる。回転速度R1,R2の回転により、図4(b)のように、基板W上に吐出された塗布液RSは放射状に広げられる。なお、塗布液RSの一部は、基板W外に飛散される。また、基板W上には、上述のように、プリウェット液膜PWが形成されているので、塗布液RSは素早く広がる。図2の時間t5において、保持回転部2は、回転速度を下げて、予め設定された回転速度R3で基板Wを回転させる。時間t6において、塗布ノズル3による塗布液RSの吐出を終了(停止)する。
塗布液RSの塗布終了後、時間t7において、塗布装置1は、図5(a)のように、ガスノズル4により基板Wの周縁部Eに向けてガスGSを吹き付ける。このガスGSの吹き付けの説明よりも先に、塗布液膜RSの厚みを調整する基板Wの回転について説明する。
ノズル移動機構13は、エッジリンスノズル6を吐出位置に移動させておく。塗布装置1は、回転速度R4の回転より基板W上の塗布液膜RSの乾燥が終了した後に、基板Wの周縁部Eの塗布液膜RSに対してエッジリンスを行う。すなわち、図2の時間t11から時間t12までの間において、塗布装置1は、図9(a)のように、エッジリンスノズル6によりエッジリンス液を吐出して、図9(b)のように、基板Wの周縁部Eの所定幅の塗布液膜RSを取り除く。その後、図2の時間t12において、保持回転部2は、回転速度を上げて、予め設定された回転速度R6で基板Wを回転させる。これにより、エッジリンスノズル6により基板W上に吐出したエッジリンス液をスピン乾燥させる。時間t13において、保持回転部2は、基板Wの回転を停止させる。時間t14において、基板Wは停止される。
2 … 保持回転部
3 … 塗布ノズル
4 … ガスノズル
4a … 吹き付け口
6 … エッジリンスノズル
E … 周縁部
PW … プリウェット液(プリウェット液膜)
RS … 塗布液(塗布液膜)
Claims (12)
- 塗布ノズルにより基板上に塗布液を吐出する工程と、
保持回転部により前記基板を回転させて前記基板上に前記塗布液の液膜を形成するとともに、余剰の塗布液の少なくとも一部を前記基板の回転に伴う遠心力により前記基板の周縁部に向けて押しやって前記基板の周縁部に沿って余剰の塗布液を盛り上げる工程と、
前記基板の回転により前記基板上の前記塗布液の乾燥が終了する前に、ガスノズルにより前記基板の周縁部に向けてガスを吹き付けて、前記周縁部に盛り上がる余剰の塗布液を前記基板外に排出するガス吹き付け工程と、
を備えることを特徴とする塗布方法。 - 請求項1に記載の塗布方法において、
前記塗布液を盛り上げる工程において、前記余剰の塗布液を盛り上げる前記基板の回転速度は、500rpm以下であることを特徴とする塗布方法。 - 請求項1または2に記載の塗布方法において、
前記ガス吹き付け工程において、前記基板の回転により前記基板上の前記塗布液の乾燥が終了する前でかつ前記塗布液の吐出終了後に、前記ガスノズルにより前記基板の周縁部に向けてガスを吹き付けることを特徴とする塗布方法。 - 請求項1から3のいずれかに記載の塗布方法において、
前記ガス吹き付け工程において、前記基板の回転により前記基板上の前記塗布液の乾燥が終了する前でかつ前記余剰の塗布液を盛り上げる回転速度に基板を回転した後に、前記ガスノズルにより前記基板の周縁部に向けてガスを吹き付けることを特徴とする塗布方法。 - 請求項1から4のいずれかに記載の塗布方法において、
前記ガス吹き付け工程において、前記ガスノズルにより、予め設定された時間でガスを吹き付けることを特徴とする塗布方法。 - 請求項1から5のいずれかに記載の塗布方法において、
前記ガス吹き付け工程において、前記ガスノズルにより、予め設定された圧力でガスを吹き付けることを特徴とする塗布方法。 - 請求項1から6のいずれかに記載の塗布方法において、
前記ガス吹き付け工程において、前記ガスノズルにより、予め設定された複数回でガスを吹き付けることを特徴とする塗布方法。 - 請求項1から7のいずれかに記載の塗布方法において、
前記ガスノズルの吹き付け口は、円形であることを特徴とする塗布方法。 - 請求項1から8のいずれかに記載の塗布方法において、
前記ガス吹き付け工程において、前記ガスノズルにより、前記基板の周縁部に、かつ前記基板の内側から外側に向けて、前記ガスを吹き付けることを特徴とする塗布方法。 - 請求項1から9のいずれかに記載の塗布方法において、
回転により前記基板上の前記塗布液の膜の乾燥が終了した後に、前記基板の周縁部の前記塗布液の膜に対してエッジリンスを行う工程を更に備えることを特徴とする塗布方法。 - 請求項1から10のいずれかに記載の塗布方法において、
前記ガス吹き付け工程において、前記ガスノズルの位置は、固定されていることを特徴とする塗布方法。 - 請求項1から10のいずれかに記載の塗布方法において、
前記ガス吹き付け工程において、前記ガスノズルは、前記基板の半径方向でかつ前記基板の周縁部の予め設定された幅で移動可能であることを特徴とする塗布方法。
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