WO2016150391A1 - 智能功率模块及其制造方法 - Google Patents

智能功率模块及其制造方法 Download PDF

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Publication number
WO2016150391A1
WO2016150391A1 PCT/CN2016/077143 CN2016077143W WO2016150391A1 WO 2016150391 A1 WO2016150391 A1 WO 2016150391A1 CN 2016077143 W CN2016077143 W CN 2016077143W WO 2016150391 A1 WO2016150391 A1 WO 2016150391A1
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WIPO (PCT)
Prior art keywords
heat sink
tube
power module
power
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2016/077143
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English (en)
French (fr)
Inventor
冯宇翔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Midea Group Co Ltd
GD Midea Air Conditioning Equipment Co Ltd
Original Assignee
Midea Group Co Ltd
GD Midea Air Conditioning Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201520166339.9U external-priority patent/CN204596778U/zh
Priority claimed from CN201520166443.8U external-priority patent/CN204559407U/zh
Priority claimed from CN201510130308.2A external-priority patent/CN104767396B/zh
Priority claimed from CN201510128312.5A external-priority patent/CN105047623B/zh
Priority claimed from CN201510129283.4A external-priority patent/CN104795974A/zh
Priority claimed from CN201510130426.3A external-priority patent/CN104767417B/zh
Priority claimed from CN201510128550.6A external-priority patent/CN104752373B/zh
Priority claimed from CN201510129209.2A external-priority patent/CN104795388B/zh
Priority claimed from CN201510130088.3A external-priority patent/CN104779174B/zh
Priority claimed from CN201510129237.4A external-priority patent/CN104835794B/zh
Priority claimed from CN201520167653.9U external-priority patent/CN204558448U/zh
Priority claimed from CN201510130307.8A external-priority patent/CN104766842B/zh
Application filed by Midea Group Co Ltd, GD Midea Air Conditioning Equipment Co Ltd filed Critical Midea Group Co Ltd
Priority to US15/559,834 priority Critical patent/US10615155B2/en
Priority to JP2018500841A priority patent/JP6500162B2/ja
Publication of WO2016150391A1 publication Critical patent/WO2016150391A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
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    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
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    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
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    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
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    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
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    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
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    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
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    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

  • the invention belongs to the field of electronic device manufacturing processes, and in particular relates to an intelligent power module and a manufacturing method thereof.
  • the Intelligent Power Module is a power-driven product that combines power electronics and integrated circuit technology.
  • the intelligent power module integrates the power switching device and the high voltage driving circuit, and has built-in fault detecting circuits such as overvoltage, overcurrent and overheating.
  • the intelligent power module receives the control signal of the MCU, drives the subsequent circuit to work, and on the other hand sends the state detection signal of the system back to the MCU.
  • the intelligent power module wins more and more market with its high integration and high reliability. It is especially suitable for inverters and various inverter power supplies for driving motors. It is frequency control and metallurgy. An ideal power electronic device for mechanical, electric traction, servo drive, and frequency conversion appliances.
  • the smart power module generally works in a high temperature environment, and the power device in the smart power module emits a large amount of heat during operation, the junction temperature of the power device is high, although the circuit substrate has a heat dissipation effect, but because the insulating layer The presence of the smart power module results in a higher overall thermal resistance.
  • the long-term high temperature environment will seriously reduce the service life of the intelligent power module and affect the stability of the performance of the intelligent power module.
  • the intelligent power module will run out of control due to overheating of the internal components during operation, resulting in personal injury and property damage.
  • the power device of the intelligent power module emits a large amount of heat during operation, resulting in a high junction temperature of the power device.
  • the circuit substrate has a heat dissipation effect, the overall thermal resistance of the smart power module is high due to the presence of the insulating layer.
  • the heat of the power device is transferred to other devices, so that the electrical parameters of other devices are not negligible.
  • the selection of high thermal insulation insulation layer and the addition of a heat sink are the main methods to solve the heat dissipation problem of the current intelligent power module.
  • the high thermal conductivity insulating layer is very costly on the one hand, and on the other hand, the high thermal conductivity insulating layer uses a large amount of impurities to cause a large hardness, thereby increasing the manufacturing difficulty of the intelligent power module. If a method of adding a heat sink inside the smart power module and then mounting the power component on the heat sink is used, the raw material cost is increased on the one hand, and the process difficulty of the smart power module is increased on the other hand. If the heat sink is added outside the intelligent power module, the heat sink needs to be placed on the back of the smart power module. On the one hand, the application cost is increased, and on the other hand, the assembly difficulty is increased, and the application of the intelligent power module is promoted and manufactured, and Conducive to the popularity of intelligent power modules in civilian applications.
  • the present invention aims to solve at least one of the technical problems in the related art to some extent. To this end, the present invention proposes an intelligent power module that has good heat dissipation and low manufacturing difficulty.
  • the invention also proposes a method of manufacturing a plurality of intelligent power modules.
  • An intelligent power module includes: a heat sink, at least a part of a lower surface of the heat sink is a heat dissipating area, and a heat dissipating pleat is disposed on the heat dissipating area; and an insulating layer is disposed on the heat dissipating layer Upper surface of the device
  • the circuit wiring is disposed on the insulating layer; the circuit component is disposed on the circuit wiring and connected to the circuit wiring by a metal wire.
  • the smart power module of the embodiment of the invention by disposing heat dissipation wrinkles on the lower surface of the heat sink, most of the heat of the circuit component is quickly dissipated, so that the smart power module always works in a low temperature environment, thereby improving the smart power module. Electrical performance and thermal stability.
  • the heat sink is a paper heat sink having a wet carbon composite functional paper or the heat sink is a paper heat sink made of an insulating material that can withstand temperatures above 350 °C.
  • the heat dissipation pleats are plural, and the plurality of heat dissipation pleats are spaced apart or a plurality of the heat dissipation pleats are continuously disposed.
  • the distance between the outer periphery of the heat dissipating pleats and the outer periphery of the lower surface of the heat sink is greater than 1 mm.
  • the heat dissipating region protrudes downward to form a boss, and the heat dissipating pleat is disposed on the boss.
  • the smart power module further includes a frame structure nested around a periphery of the smart power module, the frame structure including a ring frame surrounding a side of the smart power module and being vertically defined by a bottom of the ring frame An extending portion that is formed to extend inwardly and that is in contact with the bottom of the heat sink, the extending portion having a thickness of 1 mm to 1.5 mm.
  • the circuit wiring is a plurality of spaced apart
  • the smart power module further includes a plurality of pins, one end of each of the pins is respectively connected to the plurality of circuit wires, and the other end is Externally connected.
  • the edge of at least one side of the insulating layer is provided with a plurality of pads, and the other ends of the plurality of pins are respectively connected to the plurality of pads.
  • the heat sink has a thickness in the up and down direction of 1.2 mm to 2.5 mm, and the heat dissipating pleats extend in the up and down direction by a size of 0.3 mm to 0.7 mm.
  • the smart power module further includes a sealing resin that completely seals the circuit wiring and the circuit component, the sealing resin covering an upper surface of the heat sink and the heat dissipation region Outside area.
  • the circuit component includes a power component and a non-power component, the power component and the non-power component are both disposed on the circuit wiring, and the power component and the non-power component respectively pass the metal wire and
  • the circuit wiring is electrically connected, the power component is opposite to the heat dissipation region, and the power component and the non-power component have a partition portion, and the partition portion is disposed at a corresponding position on a lower surface of the heat sink
  • the partition has a width of 1 mm to 5 mm.
  • the power device includes an IGBT tube and an FRD tube connected to the IGBT tube, a bottom of the FRD tube is provided with a carrier tray, the FRD tube is inverted at a predetermined position of the IGBT tube and The top of the FRD tube is in contact with the IGBT tube, and the carrier tray is connected to the IGBT tube through the circuit wiring.
  • one side of the tray on which the FRD tube is mounted is provided with a flat portion, and one side of the tray on which the FRD tube is mounted is provided with a plurality of edges for connecting the edge away from the flat portion. a protruding portion of the circuit wiring.
  • the power devices are six, respectively three upper arm power devices and three lower arm power devices, and the power elements further include corresponding to the three upper arm power devices, respectively.
  • the power elements further include corresponding to the three upper arm power devices, respectively.
  • U-phase high voltage drive set a tube Connected U-phase high voltage drive set a tube, a V-phase high-voltage drive integrated tube, a W-phase high-voltage drive integrated tube, and a U-phase low-voltage drive integrated tube, a V-phase low-voltage drive integrated tube, and a W-phase low-voltage drive respectively connected to the three lower-arm power devices Integrated tube
  • the intelligent power module further includes a power factor correction circuit having a bridge stack, a compressor inverter, and a power factor correction function or having a bridge stack, a compressor inverter, a power factor correction, and a fan inverter function.
  • the power factor correction circuit is respectively connected to the U, V, W phase high voltage drive integrated tube and the U, V, W three-phase low voltage drive integrated tube.
  • the three upper arm power devices are a first power device, a second power device, and a third power device, respectively, and the three lower arm power devices are respectively a fourth power device and a fifth Power device, sixth power device;
  • the first power device includes a first IGBT transistor and a first FRD transistor
  • the second power device includes a second IGBT transistor and a second FRD transistor
  • the third power device includes a third IGBT transistor and a third FRD transistor
  • the fourth power device includes a fourth IGBT transistor and a fourth FRD transistor
  • the fifth power device includes a fifth IGBT transistor and a fifth FRD transistor
  • the sixth power device includes a sixth IGBT transistor and a sixth FRD tube;
  • the U, V, W three-phase high-voltage driving integrated tube comprises a power terminal, an input terminal, an output terminal, a high-voltage power supply positive terminal, a high-voltage power supply negative terminal and a ground terminal
  • the U, V, W three-phase low-voltage driving integrated pipe comprises Power, input, output, and ground, where:
  • the input ends of the U, V, W three-phase high-voltage driving tubes respectively serve as U, V, W three-phase upper arm input ends of the intelligent power module;
  • the U, V, W three-phase low-voltage driving tube inputs The ends are respectively U, V, W three-phase lower arm input ends of the intelligent power module;
  • the U, V, W three-phase high-voltage drive tube is connected to the power end of the U, V, W three-phase low-voltage drive integrated tube and serves as the positive end of the low-voltage area power supply of the intelligent power module, the U,
  • the grounding ends of the V, W three-phase high-voltage driving tube and the U, V, W three-phase low-voltage driving integrated tube are connected as the negative end of the low-voltage area power supply of the intelligent power module, and the U, V, W three-phase
  • the positive end of the high voltage power supply of the high voltage drive tube is used as the positive end of the U, V, W three-phase high voltage power supply of the intelligent power module;
  • An output end of the U-phase high-voltage driving integrated tube is connected to a gate of the first IGBT tube, and a high-voltage power supply negative end of the U-phase high-voltage driving integrated tube and an emitter of the first IGBT tube, the first An anode of an FRD tube, a collector of the fourth IGBT tube, a cathode of the fourth FRD tube, and a negative terminal of a power supply of a U-phase high voltage region of the intelligent power module;
  • the V-phase high voltage drive An output end of the integrated tube is connected to a gate of the second IGBT tube, and the V-phase high voltage drives a high voltage power supply negative end of the integrated tube and an emitter of the second IGBT tube, an anode of the second FRD tube, a collector of the fifth IGBT tube, a cathode of the fifth FRD tube, and a negative end of a power supply of a V-phase high voltage region of the smart power module; an output end of the W-
  • the collector of the first IGBT tube a collector of the first IGBT tube, a cathode of the first FRD tube, a collector of the second IGBT tube, a cathode of the second FRD tube, a collector of the third IGBT tube, the The cathode of the third FRD tube is connected, and As a high voltage input terminal of the intelligent power module;
  • An output end of the U-phase low-voltage driving integrated tube is connected to a gate of the fourth IGBT tube, an emitter of the fourth IGBT tube is connected to an anode of the fourth FRD tube, and serves as a U of the intelligent power module a low-voltage reference terminal, an output end of the V-phase low-voltage driving integrated tube is connected to a gate of a fifth IGBT tube, an emitter of the fifth IGBT tube is connected to an anode of the fifth FRD tube, and a V-phase low-voltage reference terminal of the smart power module, an output end of the W-phase low-voltage drive integrated tube is connected to a gate of a sixth IGBT tube, and an emitter of the sixth IGBT tube is connected to an anode of the sixth FRD tube And as the W-phase low-voltage reference terminal of the intelligent power module.
  • the power factor correction circuit includes a high speed IGBT tube, a high power FRD tube, a low power FRD tube, and a first low voltage drive integrated tube;
  • the first low voltage driving integrated tube includes an input end, an output end, a power end, and a ground end;
  • An input end of the first low voltage drive integrated tube serves as an input end of the power factor correction circuit;
  • a power end of the first low voltage drive integrated tube serves as a power end of the power factor correction circuit, and the first low voltage drive a ground end of the integrated tube serves as a ground end of the power factor correction circuit;
  • An input end of the first low voltage driving integrated tube is connected to a gate of the high speed IGBT tube, an emitter of the high speed IGBT tube is connected to an anode of the low power FRD tube, and a collector of the high speed IGBT tube is The cathode of the low power FRD tube is connected to the anode of the high power FRD tube.
  • the smart power module is the intelligent power module as described above, and the manufacturing method includes the following steps:
  • S70 Perform a module function test on the smart power module, where the module function test includes an insulation withstand voltage, a static power consumption, and a delay time test.
  • step S10 the following sub-steps are further included:
  • step S50 the following sub-steps are further included:
  • thermosetting resin frame around the surface of the insulating layer
  • step S30 a pin is pre-formed before the circuit component is disposed at a corresponding position of the circuit wiring and includes the following sub-steps:
  • S31 selecting a copper substrate, forming a row of pins by punching or etching the copper substrate, and connecting the pins through the reinforcing ribs;
  • step S40 the following substeps are further included:
  • the heat sink is a paper heat sink
  • the front surface of the heat sink is covered with an insulating layer
  • the steps of forming circuit wiring and solder pads on the surface of the insulating layer include:
  • S'40 forming a partition on the back surface of the heat sink, and fixing the pre-made heat-dissipating wrinkles on the back surface of the heat sink corresponding to the position of the power component includes S'41: cutting and tearing The material at a specific position on the back surface of the paper heat sink is removed by cracking, corrosion, or the like to form a partition.
  • Wrinkles are formed using a wet carbon composite, and the back surface of the heat sink is bonded to the position of the power element by a high temperature resistant glue.
  • the smart power module is the intelligent power module as described above, and the manufacturing method includes the following steps:
  • T10 manufacturing the heat sink and the lead, the upper surface of the heat sink is formed into a plane
  • T20 providing an insulating layer on the upper surface of the heat sink, and forming a circuit wiring on the upper surface of the insulating layer;
  • T30 respectively, setting circuit components and pins connected to the outside on the circuit wiring, providing a heat dissipation area on the lower surface of the heat sink, and providing heat dissipation wrinkles on the heat dissipation area;
  • T40 connecting circuit components and circuit wiring with metal wires
  • T50 The heat sink is baked and the sealing resin is molded, and the pins are molded to obtain an intelligent power module.
  • the smart power module is the intelligent power module as described above, and the manufacturing method includes the following steps:
  • P20 providing an insulating layer on an upper surface of the heat sink, and providing a circuit wiring on an upper surface of the insulating layer;
  • P50 baking the heat sink and molding a sealing resin, and molding the pin to obtain an intelligent power module.
  • the step of cleaning the heat sink is further included;
  • the heat sink is baked in an oxygen-free environment, the baking time is more than 2 h, and the baking temperature is 110 ° C - 140 ° C.
  • the weld zone further includes a non-power weld zone in which at least one non-power device is assembled,
  • Step Q10 includes step Q11: forming a heat sink by using a wet carbon composite layer
  • Step Q30 includes a step Q31 of forming a heat dissipation pleat on a side of the heat sink that is not in contact with the insulating layer, the heat dissipation pleat corresponding to an area where the at least one power device is located;
  • Step Q40 includes:
  • the heat sink is subjected to a cleaning process, wherein the cleaning process includes a shower process and/or an ultrasonic cleaning process.
  • step Q30 includes:
  • a metal seed layer is formed on a side of the insulating layer that is not in contact with the heat dissipation layer, wherein the metal seed layer has a thickness of 0.01 to 0.1 ⁇ m;
  • Q'32 plating the seed layer to form a circuit wiring, wherein the circuit wiring has a thickness of 1 to 5 microns;
  • Q'34 a metal wire is connected between the land, the lead, and the pad.
  • FIG. 1 is a top plan view of an intelligent power module according to an embodiment of the present invention.
  • FIG. 1(a) is a bottom view of an intelligent power module according to an embodiment of the present invention
  • Figure 2 is a cross-sectional view taken along line X-X' of Figure 1;
  • FIG. 2(a) is a schematic structural diagram of an intelligent power module according to an embodiment of the present invention.
  • FIG. 2(b) is a schematic structural diagram of an intelligent power module according to an embodiment of the present invention.
  • FIG. 3 is a side view showing a process of a heat sink in a method of manufacturing an intelligent power module according to an embodiment of the invention
  • FIG. 4 is a schematic top plan view of a heat sink in a method of manufacturing an intelligent power module according to an embodiment of the invention
  • FIG. 5 is a schematic view showing a process of forming an insulating layer 307 and a copper foil layer 18B on a heat sink;
  • FIG. 6 is a schematic view showing a process of fabricating a circuit wiring
  • 6(a) is a schematic view showing a circuit wiring formed on a copper foil layer after forming an insulating layer and a copper foil layer on the front surface of the heat sink;
  • 6(b) is a schematic view showing a through hole formed in a circuit wiring of an intelligent power module according to an embodiment of the present invention
  • 6(c) is a schematic view of the smart power module after removing the sealing resin according to an embodiment of the invention.
  • Figure 7 is a cross-sectional view taken along line X-X' of Figure 3;
  • Figure 8 is a schematic view showing the process of making heat dissipation wrinkles
  • Figure 9 is a dimension diagram of the pin
  • Figure 10 is a schematic view showing the process of making a lead
  • FIG. 11 is a side view showing a process of assembling circuit components and leads on a circuit wiring
  • FIG. 12 is a schematic plan view showing a process of assembling circuit components and leads on a circuit wiring
  • Figure 12 (a) is a schematic plan view showing a process of assembling a circuit component and a lead on a circuit wiring;
  • Figure 13 is a side view showing a process of assembling a metal wire
  • FIG. 13 is a schematic structural diagram of an intelligent power module according to an embodiment of the present invention.
  • Figure 14 is a schematic plan view showing a process of assembling a metal wire
  • 15 is a schematic view showing a sealing process of an intelligent power module
  • 15(a) is a schematic structural diagram of an intelligent power module according to an embodiment of the present invention.
  • 15 (aa) is a schematic structural diagram of an intelligent power module according to an embodiment of the present invention.
  • 15(b) is a schematic structural diagram of an intelligent power module according to an embodiment of the present invention.
  • 15 (bb) is a schematic structural diagram of an intelligent power module according to an embodiment of the present invention.
  • 15(c) is a schematic structural diagram of an intelligent power module according to an embodiment of the present invention.
  • 15(d) is a schematic structural diagram of an intelligent power module according to an embodiment of the present invention.
  • 16 is a flow chart of a method of manufacturing an intelligent power module according to an embodiment of the present invention.
  • FIG. 17 is a schematic structural diagram of an intelligent power module according to an embodiment of the present invention.
  • 17(a) is a schematic structural diagram of an intelligent power module according to an embodiment of the present invention.
  • 17(b) is a schematic structural diagram of an intelligent power module according to an embodiment of the present invention.
  • Figure 18 is a cross-sectional view taken along line X-X' of Figure 17;
  • FIG. 18(a) is a schematic structural diagram of an intelligent power module according to an embodiment of the present invention.
  • FIG. 19 is a schematic structural diagram of an intelligent power module according to an embodiment of the present invention.
  • Figure 20 is a cross-sectional view taken along line X-X' of Figure 19;
  • 21 is a top plan view of an intelligent power module in which a sealing resin is removed, in accordance with an embodiment of the present invention.
  • Figure 21 (a) is a plan view of an intelligent power module in accordance with an embodiment of the present invention, wherein the sealing resin is removed;
  • 22 is a flowchart of a method of manufacturing an intelligent power module according to an embodiment of the present invention.
  • FIG. 23 is a schematic structural view of the heat sink of FIG. 4 with an increased heat dissipation area
  • 24 is a schematic structural view showing an insulating layer and a copper foil layer disposed on a heat sink of an intelligent power module according to an embodiment of the present invention
  • 25 is a schematic structural view of a heat dissipation pleat of an intelligent power module according to an embodiment of the present invention.
  • 26 is a schematic structural view of an intelligent power module assembled with heat dissipation wrinkles according to an embodiment of the present invention
  • FIG. 27 is a schematic structural diagram of a plurality of pins of an intelligent power module according to an embodiment of the present invention.
  • 28 is a schematic structural diagram of pins of an intelligent power module according to an embodiment of the present invention.
  • 28(a) is a schematic structural diagram of a pin of an intelligent power module according to an embodiment of the present invention, the pin having an arc;
  • 29 is a schematic structural diagram of circuit wiring of an intelligent power module after assembly is completed according to an embodiment of the present invention.
  • Figure 30 is a plan view of the structure shown in Figure 29;
  • Figure 31 is a schematic view showing the structure of the structure shown in Figure 29 after the joining process
  • Figure 32 is a plan view of the structure shown in Figure 31;
  • Figure 32 (a) is a schematic structural diagram of an intelligent power module according to an embodiment of the present invention.
  • 32(b) is a schematic structural diagram of an intelligent power module according to an embodiment of the present invention.
  • Figure 33 is a schematic view showing the structure of the structure shown in Figure 31 after adding a sealing resin
  • Fig. 34 is a view showing the structure of the structure shown in Fig. 33 for pin cutting.
  • FIG. 35 is a schematic structural diagram of an intelligent power module according to an embodiment of the present invention.
  • Figure 36 is a cross-sectional view taken along line X-X' of Figure 35;
  • FIG. 38 is a schematic structural view of an intelligent power module assembled with heat dissipation wrinkles according to an embodiment of the present invention.
  • 39 is a schematic structural diagram of circuit wiring of an intelligent power module after assembly is completed according to an embodiment of the present invention.
  • Figure 40 is a schematic structural view of the structure shown in Figure 39 after the joining process
  • Figure 41 is a schematic view showing the structure of the structure shown in Figure 40 after adding a sealing resin
  • Figure 42 is a schematic view showing the structure of the structure shown in Figure 41 for pin cutting
  • Figure 43 is a schematic view of a separate frame structure
  • Figure 44 is a cross-sectional view taken along line X-X' of Figure 43.
  • 45(A) is a circuit diagram of a conventional smart power module
  • 45(B) is a plan view of a conventional smart power module
  • Figure 45 (C) is a schematic view of Figure 45 (B) after removing the resin
  • Figure 45 (D) is a cross-sectional view taken along line X-X' of Figure 45 (B);
  • 45(E) is a schematic view showing the installation of an existing smart power module on an aluminum heat sink
  • Figure 45 (BB) is a top view of an existing smart power module
  • Figure 45 (CC) is a schematic view of Figure 45 (BB) after removing the resin
  • Figure 45 (DD) is a cross-sectional view taken along the line X-X' of Figure 45 (BB);
  • Figure 45 (EE) is a schematic view of an existing smart power module mounted on an aluminum heat sink
  • Figure 46 (A) is a circuit diagram of an intelligent function module according to an embodiment of the present invention.
  • Figure 46 (B) is a plan view of the intelligent function module of the embodiment of the present invention.
  • Figure 46 (C) is a cross-sectional view taken along line X-X' of Figure 46 (B);
  • Figure 46 (D) is a front plan view of the intelligent function module of the embodiment of the present invention after removing the sealing resin;
  • Figure 46 (AA) is a circuit diagram of a preferred embodiment of the intelligent function module of the present invention.
  • Figure 46 (BB) is a plan view of a preferred embodiment of the intelligent function module of the present invention.
  • Figure 46 (CC) is a cross-sectional view taken along the line X-X' of Figure 46 (BB);
  • Figure 46 (DD) is a front plan view of the intelligent function module of the embodiment of the present invention after removing the sealing resin;
  • Figure 47 (A) is a plan view showing the formation of an insulating layer and a copper foil layer on the front surface of the paper heat sink in the first step of the embodiment of the present invention
  • Figure 47 (B) is a side view of Figure 47 (A);
  • FIG. 48(A) is a second step of the embodiment of the present invention in which an IGBT tube, a high voltage drive integrated tube, a low voltage drive integrated tube, and a pre-formed lead are mounted on the surface of the circuit wiring, and the FRD tube is mounted on the carrier tray.
  • Figure 48 (B) is a side view of Figure 48 (A);
  • AA is a plan view showing an IGBT tube, an FRD tube, and a lead on a circuit wiring in a second step of the embodiment of the present invention
  • Figure 48 (BB) is a side view of Figure 48 (AA);
  • Figure 48 (C) is a bottom view of the tray in the second step of the embodiment of the present invention.
  • Figure 48 (D) is a front elevational view of the tray in the second step of the embodiment of the present invention.
  • Figure 49 (A) is a plan view showing the mounting of the FRD tube on the emitter of the IGBT tube in the third step of the embodiment of the present invention.
  • Figure 49 (B) is a side view of Figure 49 (A);
  • AA is a plan view showing a high voltage driving integrated tube and a low voltage driving integrated tube mounted on an emitter of an IGBT tube in a third step of the embodiment of the present invention
  • Figure 49 (BB) is a side view of Figure 49 (AA);
  • Figure 50 (A) is a plan view showing a circuit in which a IGBT tube, an FRD tube, a high voltage drive integrated tube, a low voltage drive integrated tube, and a circuit wiring are connected by a metal wire to form a circuit in a fourth step of the embodiment of the present invention
  • Figure 50 (B) is a side view of Figure 50 (A);
  • Figure 50 (AA) is a plan view showing a connection between a power element, a non-power element, a heat sink, and a circuit wiring by a metal wire in a fourth step of the embodiment of the present invention
  • Figure 50 (BB) is a side view of Figure 50 (AA);
  • Figure 51 is a cross-sectional view showing a fifth embodiment of the embodiment of the present invention in which a paper heat sink is sealed with a sealing resin using a mold;
  • Figure 51 (A) is a cross-sectional view showing a paper heat sink sealed with a sealing resin using a mold in a fifth step of the embodiment of the present invention
  • Figure 52 (A) is a schematic view showing the cutting of the lead in the sixth step of the embodiment of the present invention.
  • Figure 52 (B) is a schematic view showing the installation of heat dissipation wrinkles in the sixth step of the embodiment of the present invention.
  • 53 is a flow chart of a method for manufacturing an intelligent power module according to an embodiment of the present invention.
  • FIG. 53(A) is a flowchart of a method for manufacturing an intelligent power module according to an embodiment of the present invention.
  • FIG. 54 is a flowchart of a method for manufacturing an intelligent power module according to an embodiment of the present invention.
  • the smart power module 10 according to an embodiment of the present invention will be described in detail below with reference to FIGS.
  • an intelligent power module 10 includes a heat sink 306, an insulating layer 307, circuit wiring 308, circuit components, and a metal line 305.
  • a heat dissipating region 17B is formed on at least a portion of the lower surface of the heat sink 306, and a heat dissipating pleat 17A is disposed on the heat dissipating region 17B, and the insulating layer 307 is disposed on the upper surface of the heat sink 306.
  • the circuit wiring 308 is provided on the insulating layer 307, the circuit elements are provided on the circuit wiring 308, and the circuit elements are connected to the circuit wiring 308 through the metal wires 305.
  • the smart power module 10 of the embodiment of the present invention by disposing the heat dissipating pleats 17A on the lower surface of the heat sink 306, most of the heat of the circuit components is quickly dissipated, so that the smart power module 10 is always operated in a low temperature environment, thereby improving The electrical performance and thermal stability of the smart power module 10 are obtained.
  • an intelligent power module 10 has a lead 301, a sealing layer 12a, a metal line 305, a heat sink 306, a circuit wiring 308, an insulating layer 307, and circuit elements including power. Element 19 and non-power element 14a.
  • the heat sink 306 is a paper heat sink, and the lower surface of the heat sink 306 forms a large number of heat dissipation wrinkles 17A, and the upper surface of the heat sink 306 is covered with an insulating layer 307.
  • the circuit wiring 308 is disposed on the surface of the insulating paste 21, and the circuit wiring 308 includes a pad 18A disposed near the edge of the surface of the heat sink 306.
  • Metal lines 305 are used to form circuit connections between circuit wiring 308, between circuit elements, and between circuit wiring 308 and circuit elements in accordance with a circuit schematic.
  • the sealing layer 12a is formed of a thermosetting resin frame 13a and a thermoplastic resin injected into the range of the thermosetting resin frame 13a. The circuit is sealed and completely covers all of the elements on the upper surface of the heat sink 306.
  • the heat sink 306 can be made of an insulating material with a high temperature of 350 ° C or higher.
  • the wet carbon composite functional paper can be processed into a graphite by a composite of a powdery and fibrous carbon material, and can be folded into an arbitrary shape as needed to obtain a heat dissipating wrinkle 17A.
  • the surface may be subjected to a water repellent treatment, that is, the lower surface of the heat sink 306 is covered with a waterproof layer (not shown).
  • the heat sink 306 and the heat dissipating pleats 17A are integrally formed, wherein the heat sink 306 has a flat shape and the heat dissipating pleats 17A are irregular in shape; the heat sink 306 and the heat dissipating pleats 17A may also be wetted with different thicknesses.
  • this embodiment uses different thicknesses. Among them, in order to increase the mechanical strength, the heat sink 306 uses a thick wet carbon composite material, and the thickness can be designed to be 1.5 mm. In order to reduce the cost and increase the density of the wrinkles, the heat dissipation wrinkle 17A adopts a thin wet carbon. Composite material, thickness can be designed to be 0.5mm.
  • the side of the heat sink 306 having the heat dissipation pleats 17A may be referred to as the back surface (ie, the lower surface) of the heat sink 306, and the opposite surface may be referred to as the surface (upper surface) of the heat sink 306.
  • the heat dissipating pleats 17A cannot completely cover the back surface of the heat sink 306, the edge of the back surface of the heat sink 306 needs to flow out at a flat position of at least 2 mm, and the rectangular short side of the heat sink 306 has a mounting hole 16a having a diameter of at least 1 mm. .
  • the insulating layer 307 is based on a conventional insulating material, and may be doped with silicon dioxide, silicon nitride, silicon carbide, or the like to improve thermal conductivity.
  • the doping may be spherical or angular, and is pressed by hot pressing.
  • the surface of the heat sink 306 is exposed at the position of the mounting hole 16a of the heat sink 306.
  • the circuit wiring 308 is made of metal such as copper, and is formed at a corresponding position on the insulating layer 307 (the position is designed according to the circuit schematic), and can be designed to a thickness of 0.035 mm or 0.07 mm according to power requirements, for a general intelligent power module. It can be considered to be designed to be 0.07 mm, and the thickness of 0.07 mm is used in this embodiment. Further, a pad 18A composed of a circuit wiring 308 is formed on the edge of the insulating layer 307.
  • a plurality of aligned pads 18A are provided in the vicinity of one side of the insulating layer 307, and a plurality of aligned pads 18A may be provided in the vicinity of a plurality of sides of the insulating layer 307 as needed.
  • the power element 19 and the non-power element 14a are fixed to the circuit wiring 308 to constitute a predetermined circuit.
  • the power element 19 uses an IGBT tube, a high voltage MOSFET tube, a high voltage FRD tube, etc., and the power element 19 is connected to the circuit wiring 308 or the like via a metal line 305;
  • the non-power element 14a uses an active element such as an integrated circuit, a transistor or a diode, A passive component such as a capacitor or a resistor, an active component mounted face up, or the like is connected to the circuit wiring 308 through a metal wire 305.
  • the metal wire 305 may be an aluminum wire, a gold wire or a copper wire, and the electrical connection relationship between the power elements 19, the non-power elements 14a, and the circuit wirings 308 is established by bonding, and sometimes used for guiding. An electrical connection relationship is established between the foot 301 and the circuit wiring 308 or the power element 19 and the non-power element 14a.
  • the pin 301 is fixed to a pad 18A provided on one or more of the edges of the circuit heat sink 306, and has an effect of, for example, inputting and outputting with the outside.
  • a plurality of pins 301 are provided on one side, and the leads 301 and the pads 18A are soldered by a conductive adhesive such as solder, so that the leads 301 are connected to the pads 18A and are directed from the heat sink 306.
  • the lead 301 is generally made of a metal such as copper.
  • the surface of the copper is formed by electroless plating and electroplating to form a nickel-tin alloy layer.
  • the thickness of the alloy layer is generally 5 ⁇ m. The plating layer protects the copper from corrosion and oxidation, and improves solderability.
  • the high thermal conductivity insulation layer and the addition of the heat sink can solve the heat dissipation problem of the intelligent power module, but the heat dissipation of the high thermal insulation layer is used, on the one hand, the cost is very high, and on the other hand, the height is high.
  • the thermal insulation layer uses a large amount of impurities to cause the smart power module to have a high hardness, which increases the manufacturing difficulty of the intelligent power module; if a heat sink is added inside the smart power module, the power component is mounted on the heat sink.
  • the embodiment of the present invention forms a partition on the back side of the paper heat sink by introducing a paper heat sink. And providing heat dissipation wrinkles at the position corresponding to the power component, forming an insulating layer, circuit wiring, power components, non-power components and the like on the front surface of the paper heat sink, and completing the order processing, because the paper heat sink is lighter in weight It has low requirements on the carrier used in processing and easy positioning, which can reduce the manufacturing cost and improve the process qualification rate; the process of attaching the power component to the internal heat sink can be omitted, and the investment cost of the equipment is reduced; in addition, due to the paper quality
  • the heat dissipating surface is disposed on the back surface of the heat sink, and the heat dissipating area is greatly increased, and the power component group of different functions greatly reduces thermal crosstalk due to the existence of the partition portion, and the heat generation of each heat generating portion is different from each other but rarely mutual Conducting and dissipating through the wrinkles, under the
  • a blocking portion 202a is formed on the back surface of the heat sink 306.
  • the blocking portion 202a is formed by removing the heat dissipating material at a specific position on the back surface of the heat sink, and the insulating layer 307 may be partially removed or partially removed. This embodiment achieves better heat dissipation. , using all methods of removal.
  • the power element 19 has a wrinkle 17A below it, and has no power element 19 above the partition 202a.
  • the heat dissipating pleats 17A are located on the back surface of the power element 19 surrounded by the partitioning portion 202a, and have a distance of at least 2 mm from the short side edge of the back surface of the paper heat sink 306, ensuring that the through holes 16 are not formed. Occlusion.
  • the partitioning portion 202a is a hollow formed by hollowing out the paper heat sink 306, and the partitioning portion is located between the heat generating power component groups of the functional circuits, so that heat cannot pass through the paper heat sink 306 having high heat conductivity.
  • the width of the blocking portion 202a is determined according to the distance between the groups of the heating power elements. Generally, in order to achieve the effect of the thermal blocking portion, the width of the blocking portion 202a should not be less than 1 mm, in order to increase the strength.
  • the mechanical strength of the paper heat sink 306, the width of the partition portion 202a should not be greater than 5 mm.
  • the partition portion 202a may completely remove the paper heat sink 306, expose the insulating layer 307, or remove only a majority of the paper heat sink 306 and remain bonded to the insulating layer 307. The very thin layer. In some embodiments, a method of complete removal is employed.
  • the bridge pile, the drive portion of the compressor inverter, the drive portion for power factor correction, the drive portion of the fan inverter, and other control portions are separated by the partition portion 202a, not only the heat of each heat generating portion
  • the interference is very low, most of the heat is dissipated through the wrinkles 17A, and the temperature of the control portion is kept at a low state, which avoids the performance degradation of the smart power module 10 due to the temperature fluctuation of the control portion.
  • the bonding point of the metal wire 305 is not designed above the blocking portion 202a.
  • the smart power module 10 further includes a frame structure 13 nested around the periphery of the smart power module 10.
  • the frame structure 13 may be a thermosetting resin frame and includes a surround surrounding the smart power module.
  • thermosetting resin frame 13a is molded by transfer molding, and the outer edge of the thermosetting resin frame 13a is equal in size to the heat sink 306 or slightly smaller than the heat sink 306.
  • the distance between the inner edge of the thermosetting resin frame 13a and the outer edge is not less than 1.5 mm, and at the rectangular short side of the thermosetting resin frame 13a, there is a mounting hole 16a having a diameter corresponding to the position and diameter of the through hole of the heat sink 306, To install the intelligent power module 10.
  • the sealing layer 12a is molded by a thermoplastic resin injection molding. Here, the sealing layer 12a is completely located in the thermosetting resin. All elements on the upper surface of the heat sink 306 are sealed within the frame 13a. The surface of the insulating layer 307 is covered to cover the circuit wiring 308, the circuit components, and the metal wires 305.
  • the heat dissipation area is greatly increased, and the insulation layer 307 can meet the heat dissipation requirements of the power components without using a high heat conductive material;
  • the heat dissipation structure is a paper material, and the weight is light, and the intelligent power module 10 overall The weight is reduced, which is convenient for long-distance transportation and worker assembly.
  • the intelligent power module 10 of the present invention improves the reliability while reducing the cost, and can be designed to be compatible with the current intelligent power module function and pin definition, and is convenient for the promotion and application of the intelligent power module.
  • a through hole 22a is formed in the heat sink 306, and the through hole 22a penetrates the heat sink 306 and the insulating layer 307.
  • the through hole 22a is disposed at a specific position of the heat sink 306. Specifically, the through hole 22a is located between the device and the circuit constituting the heat source and the device and the circuit not constituting the heat source, so that the heat interference between the heat sources of the power element 19 is caused. Rarely, and most of the heat of the power component 19 is quickly dissipated without being conducted to the non-power component 14a, so that the smart power module 10 is stable in performance and improves the reliability of the smart power module 10.
  • the edge between the circuit wiring 308 and the edge of the through hole 22a, and the edge of the insulating layer 307 and the edge of the through hole 22a have a set distance (followed) Details).
  • the bridge stack, the driving portion of the compressor inverter, the driving portion for the power factor correction, the driving portion of the fan inverter, and other control portions are separated from the through hole 22a.
  • the smart power module 10 further includes a pin 301 disposed at an edge of the power module, connected to the circuit wiring 308, and extending outward as an input and output.
  • the pin 301 can be disposed on one edge, two edges, three edges or four edges of the smart power module 10 according to the internal circuit layout of the smart power module 10 and the peripheral application requirements.
  • the circuit wiring 308, the power element 19 and the non-power element 14a, the metal line 305, and the connection portion of the lead 301 and the circuit wiring 308 are encapsulated by the sealing resin 12; the resin 12 The through hole 22a is filled.
  • the circuit unit 1001 implements a bridge stack function
  • the circuit unit 1002 implements a compressor inverter function
  • the circuit unit 1003 implements power factor correction
  • the circuit unit 1004 implements a fan inverter function.
  • the bridge stack, the driving portion of the compressor inverter, the driving portion for the power factor correction, the driving portion of the fan inverter, and other control portions are separated from the through hole 22a.
  • the through hole 22a is located between the circuit wirings 308, and has a distance of 1 mm or more from the insulating layer 307 and the circuit wiring 308.
  • the through hole 22a penetrates through the insulating layer 307 and the paper heat sink 306.
  • the through hole 22a is completely filled with the sealing resin 12; the through hole 22a is located in a device and a circuit constituting a heat source, and a device and a circuit not constituting a heat source.
  • thermal conductivity of the sealing resin 12 is much lower than the thermal conductivity of the paper heat sink 306, thermal isolation between the heat sources, lateral thermal isolation between the heat source and the non-heat source can be formed, and the heat source
  • the bottom portion has a wrinkle 17A, thereby greatly increasing the longitudinal heat transfer efficiency of each heat source, and the through hole 22a allows the smart power module 10 to be thermally isolated.
  • each through hole 22a can be designed to be as long as possible; as a second design, in order to improve the hardness of the paper heat sink 306, the through hole 22a The length can be designed to be 5 mm to 6 mm.
  • the distance between each through hole 22a can be designed to be 0.5 to 1 mm.
  • the lateral width of each through hole 22a can be designed to be 3 mm. 3.5 mm, in order to reduce the volume of the smart power module 10, the lateral width of each through hole 22a can be designed to be 1 mm to 2.5 mm.
  • Metal line 305 can also be used to establish an electrical connection between pin 301 and circuit wiring 308 or power component 19, non-power component 14a.
  • an aluminum wire of 300 ⁇ m to 400 ⁇ m may be used, and for the electrical connection of the non-power element 14a, an aluminum wire of 38 ⁇ m to 125 ⁇ m may be used, and if there is a connection across the through hole 22a, an aluminum wire of 250 ⁇ m or more is preferably used.
  • the sealing resin 12 may be molded by a transfer mold using a thermosetting resin 12, or may be molded using a thermoplastic resin 12 using an injection mold.
  • the resin 12 completely seals all the elements on the surface of the paper heat sink 306, that is, only one side having the element is sealed, and the other side is completely exposed.
  • the through hole 22a in the paper heat sink 306 is completely filled with the resin 12.
  • the smart power module 10 of the embodiment of the present invention has the following beneficial effects:
  • the back surface of the smart power module 10 of the present invention has heat dissipation wrinkles 17A, the heat dissipation area is greatly increased, and the insulation layer 307 can satisfy the heat dissipation requirement of the power component 19 without using a high heat conductive material.
  • the intelligent power module 10 has a bridge reactor, a compressor inverter function, or has a bridge reactor, a compressor inverter, and a fan inverter function, so that all the heating circuits in the application fields such as the inverter air conditioner are concentrated together and radiated.
  • the non-power element 14a If the heat dissipating pleats 17A are located below the power element 19, so that most of the heat of the heating element is quickly dissipated without being conducted to the non-power element 14a, so that the non-power element 14a always operates in a low temperature environment, the non-power element 14a The temperature drift is greatly reduced, and the electrical performance and thermal stability of the smart power module 10 are improved. Since the back surface of the paper heat sink 306 is sealed except for the portion where the wrinkles 17A are disposed, the smart power module 10 of the present invention Water tightness and air tightness are improved to improve long-term reliability in complex application environments.
  • the installation is simple, the structure is simple, and the heat dissipation area can be greatly increased, so that the heat of the heating element can be quickly dissipated, and since the back surface of the smart power module 10 is completely exposed, The heat dissipation of the smart power module 10 is improved.
  • the bridge pile, the drive part of the compressor inverter, the drive part of the power factor correction, the drive part of the fan inverter and the other control parts are isolated by the through hole 22a, not only the heat generating parts
  • the thermal interference is very low, and most of the heat is dissipated through the wrinkles 17A, and the temperature of the control portion is kept at a low state, thereby avoiding the performance degradation of the smart power module 10 due to the temperature fluctuation of the control portion.
  • the heat dissipation structure is paper material and light in weight, so that the overall weight of the intelligent power module 10 is reduced, which is convenient for long-distance transportation and worker assembly; since the intelligent power module 10 of the present invention itself has the heat sink 306, the external process does not need to be connected in the application process.
  • the heat sink 306 reduces application difficulty and application cost and improves assembly quality.
  • the smart power module 10 of the present invention improves the reliability and performance while reducing the cost, and can be designed to be compatible with the current smart power module 10 function and the pin 301 definition, thereby facilitating the popularization and application of the smart power module 10.
  • the manufacturing method of the intelligent power module of the present invention comprises the following steps:
  • S50 covering a surface of the insulating layer with a sealing layer to cover the circuit wiring, the circuit component, and the metal wire.
  • S70 Perform a module function test on the smart power module, where the module function test includes an insulation withstand voltage, a static power consumption, and a delay time test.
  • step S10 the following sub-steps are further included:
  • step S50 ie, the step of coating the surface of the insulating layer with a sealing layer
  • step S50 the following sub-steps are further included:
  • thermosetting resin frame around the surface of the insulating layer
  • the method of manufacturing the smart power module further includes the step S60: providing a waterproof layer on the lower surface of the heat sink.
  • step S30 a pin is pre-formed before the circuit component is disposed at a corresponding position of the circuit wiring and includes the following sub-steps:
  • S31 selecting a copper substrate, forming a row of pins by punching or etching the copper substrate, and connecting the pins through the reinforcing ribs;
  • step S40 the following substeps are further included:
  • the manufacturing method of the intelligent power module forms circuit wiring on the paper heat sink and completes order processing, and the weight is more
  • the light radiator has low requirements on the carrier used for processing, easy positioning, reduced manufacturing cost, improved process qualification rate, and the process of mounting the power component to the internal heat sink is eliminated, thereby reducing equipment investment costs.
  • the heat sink is a paper heat sink
  • the front surface of the heat sink is covered with an insulating layer
  • the steps of forming circuit wiring and solder pads on the surface of the insulating layer include:
  • S'40 forming a partition on the back surface of the heat sink, and fixing the pre-made heat-dissipating wrinkles on the back surface of the heat sink corresponding to the position of the power component includes S'41: cutting and tearing The material at a specific position on the back surface of the paper heat sink is removed by cracking, corrosion, or the like to form a partition.
  • Wrinkles are formed using a wet carbon composite, and the back surface of the heat sink is bonded to the position of the power element by a high temperature resistant glue.
  • Figure 3 is a plan view of the heat sink
  • Figure 4 is a cross-sectional view taken along line X-X' of Figure 3.
  • a suitable size of the heat sink 306 is designed.
  • the size of one piece can be 64 mm ⁇ 30 mm and the thickness is 1.5 mm, and the two sides are treated with anti-corrosion and waterproof treatment such as applying waterproof glue.
  • an insulating material is formed on the surface of the heat sink 306 by simultaneous hot pressing and formed as an insulating layer 307 and a copper material on the surface of the insulating layer 307.
  • Copper foil layer 18B is formed on the surface of the heat sink 306 by simultaneous hot pressing and formed as an insulating layer 307 and a copper material on the surface of the insulating layer 307.
  • Copper foil layer 18B is formed on the surface of the heat sink 306 by simultaneous hot pressing and formed as an insulating layer 307 and a copper material on the surface of the insulating layer 307.
  • Copper foil layer 18B Copper foil layer 18B.
  • the thickness of the insulating layer 307 may be designed to be 110 ⁇ m, and the thickness of the insulating layer 307 may be designed to be 70 ⁇ m in order to improve heat dissipation characteristics.
  • the thickness of the copper foil layer 18B may be designed to be 0.07 mm, and the thickness of the copper foil layer 18B may be designed to be 0.035 mm or 0.0175 mm in order to reduce the cost.
  • an irregular shape is formed using a wet carbon composite material having a thickness of 0.5 mm as the heat dissipation pleats 17A.
  • Anti-corrosion and water-repellent treatment such as applying waterproof rubber on both sides.
  • Each of the leads 301 is made of a copper substrate by stamping or etching, as shown in FIG. 9.
  • the individual lead units have a length C of 25 mm, a width K of 1.5 mm, and a thickness H of 1 mm.
  • an arc of 90° is also pressed at one end of the pin unit, as shown in FIG.
  • a nickel layer is formed by electroless plating: a nickel layer is formed on the surface of the copper material having a specific shape by a mixed solution of a nickel salt and a sodium hypophosphite, and a suitable complexing agent is added, and the nickel metal is strong in the metal nickel. Passivation ability, can quickly form a very thin passivation film, resistant to atmospheric, alkali and some acid corrosion.
  • the nickel-plated crystal is extremely fine, and the thickness of the nickel layer is generally 0.1 ⁇ m;
  • an acid sulfate process is used to immerse the copper material having a shape and a nickel layer in a plating solution with a positive tin ion at room temperature, and a nickel-tin alloy layer is formed on the surface of the nickel layer, and the alloy layer is generally controlled at 5 ⁇ m.
  • the formation of the alloy layer greatly improves the protection and solderability.
  • the second step is a step of mounting the power element 19, the non-power element 14a, and the lead 301 on the surface of the pad 18A on the surface of the circuit wiring 308.
  • a specific position of the circuit wiring 308 on the insulating layer 307 and the pad 18A are solder-coated by a solder paste printing machine using a steel mesh; here, in order to increase the climbing height, a 0.15 mm thick steel may be used.
  • a steel mesh having a thickness of 0.12 mm may be used.
  • the power element 19 used has a height of 0.07 mm, which is the lightest component, so the thickness of the steel mesh is selected to be a steel mesh having a thickness of 0.12 mm.
  • the heat sink 306 is placed on the carrier 20, and the power component 19, the non-power component 14a, and the pin 301 are mounted, and the power component 19 and the non-power component 14a can be placed directly.
  • the pin 301 is placed on the pad 18A at one end, and the fixing device 20A on the carrier 20 is required to be fixed at the other end.
  • the carrier 20 and the fixing device 20A are made of synthetic stone or the like. .
  • the carrier 20 needs to perform a bottom hollowing process to expose the heat-dissipating pleats 17A, and the position of the back surface of the heat sink 306 at least 1 mm which is not covered by the heat-dissipating pleats 17A is in contact with the carrier 20 to support the action.
  • the heat sink 306 placed on the carrier 20 is reflowed, the solder paste is cured, and the power element 19, the non-power element 14a, and the pin 301 are fixed.
  • the third step first, the heat sink 306 is placed in a washing machine for cleaning, and the flux such as rosin remaining during reflow and the foreign matter such as aluminum wire remaining during the pressing are washed, and the row of the non-power element 14a is arranged in the circuit wiring 308.
  • Cloth density, cleaning can be done by spraying or ultrasound or a combination of the two.
  • the heat sink 306 is placed in the cleaning bath by the mechanical arm clamping pin 301, and care should be taken not to let the mechanical arm touch the heat sink 306 because the heat sink 306 is brittle and easily deformed if the arm is clamped.
  • the heat sink 306, which is generated during the cleaning, is liable to cause the heat sink 306 to crack.
  • the aluminum wire of the appropriate diameter is selected as the bonding wire (metal wire 305), and for the integrated circuit used for signal control, the gold wire may also be considered as the bonding wire.
  • all of the aluminum wires are selected.
  • an aluminum wire of 350 ⁇ m to 400 ⁇ m is used for bonding the power element 19, and an aluminum wire of 38 ⁇ m to 200 ⁇ m is used for bonding the non-power element 14a to the heat sink 306.
  • the bonding uses aluminum wires of 350 ⁇ m to 400 ⁇ m.
  • thermosetting resin frame 13a on the insulating layer 307 and potting the thermoplastic resin.
  • thermosetting resin frame 13a having a through hole on a rectangular short side is attached to the insulating layer 307 by a non-conductive thermosetting glue such as an insulating red rubber, and heat is applied to the thermosetting resin frame 13a in an oxygen-free environment.
  • the 306 is baked, the baking time should not be less than 2 hours, the baking temperature and the selection of 175 ° C, so that the thermosetting resin frame 13a is fixed on the insulating layer 307, see FIG. 16, where the thermosetting resin frame 13a is The height must be higher than the height of the wire 305.
  • thermoplastic resin is injected into the thermosetting resin frame 13a until the thermosetting value frame 13 is filled.
  • the injection temperature of the thermoplastic resin was 150 ° C.
  • the sealing layer 12a sealed all the elements on the heat sink 306, and only the lead 301 was partially exposed.
  • the insulating layer 307 and the heat sink 306 are pierced at the through holes of the thermosetting resin 13 by means of a punch or the like to form mounting holes 16a.
  • Mounting holes 16a are used for the assembly of the smart power module 10.
  • the paper heat dissipating material may be partially removed, or all of the insulating layer 307 may be removed. In this embodiment, in order to obtain a better thermal isolation effect, all the removal methods are adopted, and all the paper heat dissipating materials are removed in the partition portion 202a. In the case of the method, care should be taken not to form a scratch on the insulating layer 307.
  • the heat-dissipating pleats 17A are adhered to the back surface of the heat sink 306 using a high-temperature resistant glue having a temperature resistance of 150 ° C or higher, where the heat-dissipating pleats 17A cannot completely cover the back surface of the heat sink 306, for example,
  • the heat dissipating pleats 17A are located on the back surface of the power element 19 surrounded by the blocking portion 202a, and the distance from the short side edge of the back surface of the heat sink 306 is at least 2 mm, so as to ensure that the mounting hole 16a is not blocked.
  • the module into the test equipment, carry out the routine electrical parameter test, generally including the insulation withstand voltage, static power consumption, delay time and other test items, the test is qualified.
  • routine electrical parameter test generally including the insulation withstand voltage, static power consumption, delay time and other test items
  • the production of the smart power module 10 is completed by the above steps.
  • An intelligent power module and a manufacturing method thereof according to the present invention introduce a paper heat sink as a carrier in an intelligent power module, and a partition portion is disposed on a back surface of the paper heat sink, and the back surface of the heat sink corresponds to a position setting of the power component Heat dissipation wrinkles, heat dissipation area is greatly increased, the insulation layer can meet the heat dissipation requirements of power components without using high thermal conductivity materials; and most of the heat of the power components is quickly dissipated without being conducted to non-power components, so that non-power components always work.
  • the temperature drift of the non-power components is greatly reduced, and the power component groups of different functions greatly reduce the thermal crosstalk due to the presence of the partitions, and the heat generation of the heat generating portions are different from each other but rarely Conducting through each other and dissipating through the wrinkles, improving electrical performance and thermal stability of the intelligent power module;
  • the invention adopts a lighter weight paper heat sink, has low requirements for processing vehicles, and is easy to locate and reduce
  • the manufacturing cost increases the process qualification rate; the process of placing the power components on the internal heat sink is eliminated, and the equipment investment cost is reduced.
  • the smart power module 10 according to an embodiment of the present invention will be described in detail below with reference to FIGS.
  • the smart power module 10 includes a heat sink 306, an insulating layer 307, a plurality of circuit wirings 308, a power component 19, a non-power component 14a, and a plurality of pins. 301 and sealing resin 12.
  • the upper surface of the heat sink 306 is formed in a plane, and the insulating layer 307 is provided on the upper surface of the heat sink 306.
  • a plurality of circuit wirings 308 are spaced apart on the insulating layer 307.
  • the power element 19 and the non-power element 14a are respectively disposed on the plurality of circuit wirings 308, the power elements 19 are electrically connected to the circuit wiring 308 through the metal wires 305, and the non-power elements 14a are electrically connected to the circuit wirings 308 through the metal wires 305.
  • the lower surface of the heat sink 306 is formed with a heat dissipation region 17B corresponding to the position of the power element 19, and the heat dissipation region 17B is provided with heat dissipation pleats 17A.
  • One end of the plurality of pins 301 is connected to the plurality of circuit wirings 308, and the other end of the plurality of pins 301 extends from the smart power module 10 to be connected to other external components.
  • the sealing resin 12 completely seals the plurality of circuit wirings 308, and the sealing resin 12 covers the upper surface of the heat sink 306 and the region other than the heat radiating region 17B.
  • the intelligent power module 10 corresponds to the power component 19 on the lower surface of the heat sink 306.
  • the heat dissipating pleats 17A are disposed at a position such that most of the heat of the power element 19 is quickly dissipated without being conducted to the non-power elements 14a, so that the non-power elements 14a are always operated in a low temperature environment, and the temperature of the non-power elements 14a is extremely large.
  • the electrical performance and thermal stability of the smart power module 10 are improved, and the back surface of the heat sink 306 is sealed by the sealing resin 12 in addition to the heat dissipating pleats 17A, thereby greatly improving watertightness and airtightness, thereby improving intelligent power.
  • the smart heat dissipating module 10 is greatly increased.
  • the heat dissipation area allows the insulating layer 307 to meet the heat dissipation requirements of the power component without using a high thermal conductive material.
  • the smart power module 10 does not need to be connected to the heat sink during the application process, thereby reducing application difficulty and application cost, and improving assembly. quality.
  • the structure improves the reliability while reducing the cost, and can be designed to be compatible with the functions and pins of the current intelligent power module, and is convenient for the promotion and application of the smart power module 10.
  • the type of heat sink 306 can be formed in a variety of ways, for example, in accordance with some embodiments of the present invention, the heat sink 306 can be constructed from wet carbon composite functional paper.
  • the powder and the fibrous carbon material can be composite processed into graphite, and the material can withstand a high temperature of 350 ° C or higher and can be folded into an arbitrary shape as needed to obtain a heat dissipating wrinkle 17A.
  • the paper heat sink composed of the paper material is light in weight, and the overall weight of the smart power module 10 is reduced, which is convenient for long-distance transportation and worker assembly, and reduces the cost.
  • the outer surface of the heat sink 306 may be subjected to a water repellent treatment so that the surface of the heat sink 306 may form a water repellent treatment layer.
  • a water repellent treatment layer may be provided on both the upper surface and the lower surface of the heat sink 306.
  • the heat sink 306 and the heat dissipation pleats 17A may be integrally formed.
  • the shape of the heat sink 306 is flat, and the shape of the heat dissipation pleats 17A is irregular to improve the heat dissipation area.
  • the structure of the heat dissipating pleats may be formed in various forms. For example, as shown in FIG. 18, the heat dissipating pleats may be formed in a structure in which a plurality of longitudinal cross sections are hollow inverted triangles.
  • the heat sink 306 and the heat dissipating pleats 17A can also be formed by other materials.
  • the heat sink 306 and the heat dissipating pleats 17A can be made of a wet carbon composite material, wherein the heat sink 306 and the heat sink The thickness of the wrinkles 17A (the size extending in the up and down direction) is different.
  • the heat sink 306 uses a thick wet carbon composite material, and the thickness can be varied from 1.2 mm to 2.5 mm.
  • the thickness can be designed to be 1.5-1.8 mm; for example, the thickness can be designed to be 0.5. Mm.
  • the heat-dissipating pleats 17A employ a thinner wet carbon composite material, and the thickness may vary from 0.3 mm to 0.7 mm, for example, the thickness may be designed to be 0.5 mm.
  • the side of the heat sink 306 having the heat dissipation pleats 17A may be referred to as the back surface of the heat sink 306, and the opposite surface may be referred to as the surface of the heat sink 306.
  • the heat dissipating pleats 17A include a plurality of, and the plurality of heat dissipating pleats 17A are spaced apart from each other.
  • the power element 19 is plural and spaced apart on the upper surface of the heat sink 17, and the heat dissipation area 17B on the lower surface of the heat sink 306 is also a plurality of heat dissipation areas.
  • the 17B is spaced apart and each of the heat dissipation regions 17B is provided with heat dissipation pleats 17A.
  • the plurality of heat dissipation regions 17B are spaced apart from each other, which can reduce the amount of materials and reduce the cost to a certain extent.
  • the heat dissipating pleats 17A include a plurality of distances between the plurality of heat dissipating pleats 17A and the outer circumference of any one of the heat dissipating pleats 17A and the outer periphery of the lower surface of the heat sink. More than 1mm.
  • the power elements 19 are plural and spaced apart on the upper surface of the heat sink 17, and the heat dissipation area 17B on the lower surface of the heat sink 306 is one, and one heat dissipation area 17B is completely The position where the plurality of power elements 19 are located is covered, and the area of the heat dissipating pleats 17A on the lower surface of the heat sink 306 is smaller than the area of the lower surface of the heat sink 306A.
  • the distance between the outer circumference of the heat dissipation pleats 17A and the outer circumference of the lower surface of the heat sink 306 is greater than 1 mm, that is, the heat dissipation pleats 17A do not completely cover the back surface of the heat sink 306, but at the edge of the back surface of the heat sink 306. A flat position of at least 1 mm is discharged. Thereby, the structure can effectively improve the watertightness and airtightness of the smart power module 10.
  • the heat dissipation region 17B is formed to protrude from the lower surface of the heat sink 306, and the heat dissipation pleats 17A are provided on the lower surface of the heat dissipation region 17B. That is, the upper surface of the heat sink 306 is a flat surface, and the thickness of the heat sink 306 at the portion where the heat dissipation pleats 17A is mounted is slightly higher than the thickness of the portion where the heat dissipation pleats 17A are not mounted. Thereby, by providing the heat dissipation region 17B, the region is distinguished from the region where the heat dissipation pleats 17A are not provided, and the sealing resin 12 can be better provided on the lower surface of the heat sink 306.
  • the lower surface of the sealing resin 12 may be flush with the back surface of the heat sink 306.
  • the sealing resin 12 can be molded by a transfer mold using a thermosetting resin, or can be molded by a injection molding using a thermoplastic resin.
  • the sealing resin 12 completely seals all the elements on the upper surface of the paper heat sink 306.
  • the lower surface of the sealing resin 12 is flush with the lower end surface of the boss of the heat radiating region 17B.
  • the insulating layer 307 can be made of an insulating material of a manufacturer such as Nitto, Nisshin, and Electrochemical.
  • the insulating layer 307 may be a thermally conductive insulating layer, and the thermally conductive insulating layer is provided with a heat conductive material, and the heat conductive material may be at least one of silicon dioxide, silicon nitride, and silicon carbide, and silicon dioxide. Silicon nitride and silicon carbide may be spherical or angular. Specifically, at the time of manufacture, doping may be added to the insulating material such as silicon dioxide, silicon nitride, silicon carbide, or the like, and pressed onto the upper surface of the heat sink 306 by hot pressing.
  • the circuit wiring 308 may be made of a metal such as copper and formed at a specific position on the insulating layer 307. Depending on the power requirements, it can be designed to a thickness of 0.035 mm or 0.07 mm. For the general intelligent power module 10, it can be considered to be designed to be 0.07 mm. In one example of the invention, circuit wiring 308 is a thickness of 0.07 mm.
  • At least one side of the insulating layer 307 is provided with a plurality of pads 18A, and the plurality of pads 18A are integrally formed with the plurality of circuit wires 308, respectively.
  • the pad 18A may be composed of a circuit wiring 308.
  • a plurality of aligned pads 18A are provided on the edge of one side of the insulating layer 307.
  • a plurality of aligned pads 18A may also be disposed at a plurality of edges of the insulating layer 307 depending on functional requirements.
  • the power element 19 and the non-power element 14a are fixed to the circuit wiring 308 to constitute a predetermined circuit.
  • the power element 19 may be an IGBT tube, a high voltage MOSFET tube, a high voltage FRD tube, or the like, and the power element 19 is connected to the circuit wiring 308 or the like through the metal line 305.
  • the non-power element 14a may be an active element such as an integrated circuit, a transistor or a diode, or a passive element such as a capacitor or a resistor. Active components mounted face up, etc.
  • the metal line 305 is connected to the circuit wiring 308.
  • the metal wire 305 may be an aluminum wire, a gold wire or a copper wire.
  • the electrical connection relationship between the power elements 19, the non-power elements 14a, and the circuit wirings 308 is established by bonding, and is sometimes used to make Pin 301 and circuit wiring 308, pin 301 and power component 19 or pin 301 and non-power component 14a establish an electrical connection relationship.
  • one side of the smart power module 10 is provided with a plurality of pins 301, and one ends of the plurality of pins 301 are respectively connected to the plurality of pads 18A.
  • the lead 301 is fixed to the pad 18A provided on one edge of the circuit board composed of the insulating layer 307, the circuit wiring 308, and the like, and has an effect of inputting and outputting, for example, from the outside.
  • the lead 301 and the pad 18A may be soldered by a conductive adhesive such as solder.
  • the pin 301 may be formed as a metal member, and the surface of the pin 301 may be provided with a nickel-tin alloy layer.
  • the lead 301 can be made of metal such as copper, and the surface of the copper is formed by electroless plating and electroplating to form a layer of nickel-tin alloy.
  • the thickness of the alloy layer is generally 5 ⁇ m.
  • the coating can protect the copper from corrosion and oxidation, and can be soldered. Sex.
  • the smart power module may be the smart power module as described above, and the method for manufacturing the smart power module according to the embodiment of the present invention may include the following steps:
  • T10 A heat sink and a lead are fabricated, and the upper surface of the heat sink is formed into a flat surface.
  • T20 An insulating layer is provided on the upper surface of the heat sink, and circuit wiring is formed on the upper surface of the insulating layer.
  • T30 A circuit component and a pin connected to the outside are respectively disposed on the circuit wiring, and a heat dissipation region is disposed on a lower surface of the heat sink corresponding to the power component, and a heat dissipation wrinkle is disposed on the heat dissipation region.
  • T40 Connect power components, non-power components, and circuit wiring with metal wires.
  • T50 The heat sink is baked and the sealing resin is molded, and the pins are molded to obtain an intelligent power module.
  • the manufacturing method of the intelligent power module of the embodiment of the invention has the beneficial effects of forming a circuit wiring on the paper heat sink and completing the order processing, and the lighter weight heat sink has low requirements for the carrier used in the processing, and the positioning is easy and the positioning is reduced.
  • the manufacturing cost, the process qualification rate is improved, the process of mounting the power component to the internal heat sink is omitted, and the equipment investment cost is reduced.
  • the intelligent power module manufactured by the above method may be the smart power module 10 according to the above embodiment of the present invention.
  • the heat sink can be a wet carbon composite functional paper heat sink.
  • step T20 the step of disposing the insulating layer is to dope at least one of spherical or angular silicon dioxide, silicon nitride, and silicon carbide in an insulating material, and then heat-pressing on the upper surface of the heat sink.
  • a plurality of pads may be provided while a plurality of circuit wirings are provided on the upper surface of the insulating layer.
  • a plurality of circuit wirings may be formed on the upper surface of the insulating layer, and in step T30, circuit elements are respectively disposed on the plurality of circuit wirings, each of the circuit components including the power component and the non-power component, and the heat dissipation The area is opposite to the power components, and pins connected to the outside are provided on each circuit wiring.
  • the heat sink may be further cleaned after the pins are disposed on the circuit wiring.
  • step T50 the heat sink is baked under the condition that in an oxygen-free environment, the baking time is greater than 2 hours, and the baking temperature is 110-140 °C.
  • the intelligent power module manufacturing method may further include step T60: for smart power
  • the module performs module function tests.
  • the module function test includes insulation withstand voltage, static power consumption and delay time test.
  • this step is a step of forming a paper heat sink 306 and heat dissipating pleats 17A by forming a wet carbon composite material having an appropriate size.
  • a paper heatsink 306 of a suitable size is designed according to the required circuit layout.
  • one size can be selected from 64mm x 30mm and the thickness is 1.5mm.
  • a rectangular material of the same material having a thickness of 0.5 mm was assembled on one side of the above-mentioned 64 mm ⁇ 30 mm rectangular paper heat sink by withstanding a high temperature resistant glue having a temperature of 300 ° C or higher.
  • the rectangle can be designed to be 40 mm ⁇ 25 mm as the heat dissipation region 17B as shown in FIG. Then, the two sides are subjected to an anti-corrosion and water-repellent treatment such as applying a waterproof rubber.
  • an insulating material and a copper material doped with an angle or a spherical shape are used to form an insulating material on the surface of the paper heat sink 306 by simultaneous hot pressing and formed as an insulating layer 307 and a copper material on the insulating layer 307.
  • the surface serves as a copper foil layer 18B.
  • the thickness of the insulating layer 307 can be designed to be 110 ⁇ m.
  • the thickness of the insulating layer 307 can be designed to be 70 ⁇ m.
  • the thickness of the copper foil layer 18B can be designed to be 0.07 mm.
  • the thickness of the copper foil layer 18B may be designed to be 0.035 mm or 0.0175 mm.
  • an irregular shape is formed using a wet carbon composite material having a thickness of 0.5 mm as the heat dissipation pleats 17A.
  • Anti-corrosion and water-repellent treatment such as applying waterproof rubber on both sides.
  • the heat-dissipating pleats 17A are adhered to the heat-dissipating region 17B of the back surface of the paper heat sink 306 using a high-temperature resistant glue having a temperature resistant to 300 ° C or higher, where the heat-dissipating pleats 17A cannot completely cover the paper heat-dissipating.
  • the back side of the 306 is required to flow out of a flat position of at least 1 mm at the edge of the back side of the paper heat sink 306.
  • This step is a step of forming a separate coated lead 301.
  • Each of the leads 301 is formed by a stamping or etching method using a copper substrate to form a row of pins 301 as shown in FIG.
  • the pin 301 is connected by 12 individual pin units through the rib 11A.
  • the individual lead units are elongated strips having a length C of 25 mm, a width K of 1.5 mm, and a thickness H of 1 mm.
  • a certain arc can also be pressed at one end of the pin unit, as shown in Fig. 28 and Fig. 28(a).
  • a nickel layer is then formed by electroless plating. Specifically, a nickel layer is formed on the surface of a copper material having a specific shape by a mixed solution of a nickel salt and a sodium hypophosphite, and a suitable complexing agent is added. Due to its strong passivation ability, metallic nickel can quickly form a very thin passivation film that resists the corrosion of the atmosphere, alkali and certain acids. The nickel plating crystal is extremely fine, and the thickness of the nickel layer is generally 0.1 ⁇ m.
  • the copper material having the formed shape and the nickel layer is immersed in a plating solution with positive tin ions at room temperature by an acidic sulfate process to form a nickel-tin alloy layer on the surface of the nickel layer.
  • the alloy layer is generally controlled at 5 ⁇ m, and the formation of the alloy layer greatly improves the protection and solderability.
  • this step is a step of mounting the power element 19, the non-power element 14a, and the lead 301 on the surface of the pad 18A on the surface of the circuit wiring 308.
  • a specific position of the circuit wiring 308 on the insulating layer 307 and the pad 18A are solder-coated by a solder paste using a steel mesh.
  • a steel mesh having a thickness of 0.15 mm can be used.
  • a steel mesh having a thickness of 0.12 mm can be used.
  • the power element 19 used has a height of 0.07 mm, which is the lightest component, so the thickness of the steel mesh is selected to be a steel mesh having a thickness of 0.12 mm.
  • the mounting of the power element 19, the non-power element 14a, and the pin 301 is performed.
  • the power element 19 and the non-power element 14a can be placed directly at a specific position of the circuit wiring 308, and the pin 301 is placed on the pad 18A at one end, the carrier 20 is required to be fixed at the other end, and the carrier 20 is made of a material such as synthetic stone. production.
  • the carrier 20 needs to perform a bottom hollowing process to expose the heat dissipation pleats 17A, and the position of the back surface of the paper heat sink 306 at least 1 mm which is not covered by the heat dissipation pleats 17A is in contact with the carrier 20 to support the action.
  • the insulating layer 307 placed on the carrier 20 is reflowed, and the solder paste is cured, and the non-power element 14a and the pin 301 are fixed.
  • a solder paste having a dissolution temperature of 280 ° C can be used.
  • This step is a step of cleaning the paper heat sink 306.
  • the paper heat sink 306 is placed in a washing machine for cleaning, and the flux such as rosin remaining during reflow and the foreign matter such as aluminum wire remaining during the pressing are washed, according to the arrangement density of the non-power element 14a at the circuit wiring 308. Washing can be carried out by spraying or ultrasound or a combination of the two.
  • the paper heat sink 306 is placed in the cleaning tank by the mechanical arm clamping pin 301, and care should be taken not to let the mechanical arm touch the paper heat sink 306 because the paper heat sink 306 is brittle and easily deformed. If the mechanical arm holds the paper heat sink 306, the vibration generated during the cleaning may easily cause the paper heat sink 306 to crack.
  • this step is a step of forming a connection between the power element 19, the non-power element 14a, the heat sink 13, and the circuit wiring 308.
  • the aluminum wire of the appropriate diameter is selected as the bonding wire.
  • the gold wire can also be considered as the bonding wire.
  • all of the aluminum wires are selected.
  • an aluminum wire of 350 ⁇ m-400 ⁇ m is used for the bonding of the power element 19
  • an aluminum wire of 38 ⁇ m-200 ⁇ m is used for the bonding of the non-power element 14a to the heat sink 13
  • the bonding uses a 350 ⁇ m-400 ⁇ m aluminum wire.
  • This step is a step of sealing the paper heat sink 306 by the sealing resin 12.
  • FIG. 33 is a cross-sectional view showing a step of sealing the paper heat sink 306 with the sealing resin 12 using the mold 50.
  • the paper heat sink 306 is baked in an oxygen-free environment, the baking time should not be less than 2 hours, and the baking temperature can be selected as 125 °C.
  • the paper heatsink 306 with the pins 301 configured is transported to the models 44 and 45. By making a specific part of pin 301 Contact with the fixture 46 to position the paper heatsink 306.
  • the heat dissipating region 17B is placed flush with the bottom of the film cavity, and a thimble having a height of 1 mm can also be attached to the bottom of the cavity to ensure that the height is not set too low.
  • a paper heat sink 306 is placed in a cavity formed inside the mold 50, and then the sealing resin 12 is injected from the gate 53.
  • the method of performing the sealing can be carried out by transfer molding using a thermosetting resin or injection molding using a thermosetting resin. Further, the gas inside the cavity of the sealing resin 12 injected corresponding to the gate 103 is discharged to the outside through the exhaust port 54.
  • the back surface of the paper heat sink 306 is in close contact with the lower mold 45.
  • the thimble may be added to the upper mold, but a small amount of the sealing resin 12 may still enter between the back surface of the paper heat sink 306 and the lower mold 45. Therefore, after demolding, laser etching or grinding is required. The small amount of the sealing resin 12 remaining on the back surface of the paper heat sink 306 is removed, and the back surface of the paper heat sink 306 is exposed from the sealing resin 12, and the portion of the paper heat sink 306 above the back surface is sealed by the sealing resin 12.
  • this step is a step of performing the function of the lead 301 to perform the module function test, and the intelligent power module 10 is completed as a product through this process.
  • the portion other than the lead 301 is sealed by the resin 12. This step is required depending on the length and shape to be used. For example, the external lead 301 is cut at the position of the broken line 51, and sometimes bent into a certain shape to facilitate subsequent assembly.
  • the smart power module 10 shown in FIGS. 17 to 19 is completed by the above steps.
  • the smart power module 10 according to an embodiment of the present invention will be described in detail below with reference to the accompanying drawings.
  • the smart power module 10 includes a heat sink 306, an insulating layer 307, a plurality of circuit wirings 308, a power component 19, a non-power component 14a, and a plurality of pins. 301 and sealing resin 12.
  • the upper surface of the heat sink 306 is formed as a flat surface, and the lower surface of the heat sink 306 is provided with heat dissipation pleats 17A.
  • An insulating layer 307 is provided on the upper surface of the heat sink 306.
  • a plurality of circuit wirings 308 are spaced apart on the insulating layer 307.
  • the power element 19 and the non-power element 14a are respectively disposed on the plurality of circuit wirings 308. Power element 19 is electrically coupled to circuit wiring 308 via metal line 305, and non-power element 14a is electrically coupled to circuit wiring 308 via metal line 305.
  • One end of the plurality of pins 301 is connected to the plurality of circuit wirings 308, and the other end of the plurality of pins 301 extends from the smart power module 10 to be connected to other external components.
  • the sealing resin 12 completely seals the plurality of circuit wirings 308 and covers the upper surface of the heat sink 306.
  • the heat dissipating area of the smart heat dissipating module 10 is greatly increased, and the insulating layer is provided.
  • 307 can meet the heat dissipation requirements of power components without using high thermal conductivity materials.
  • the smart power module 10 does not need to be connected to the heat sink during the application process, which reduces the application difficulty and application cost and improves the assembly quality.
  • This structure improves reliability while reducing cost, and can be designed to be functionally and pin-compatible with current smart power modules. It is convenient for the promotion and application of the intelligent power module 10.
  • the type of heat sink 306 can be formed in a variety of ways, for example, in accordance with some embodiments of the present invention, the heat sink 306 can be constructed from wet carbon composite functional paper.
  • the powder and the fibrous carbon material can be composite processed into graphite, and the material can withstand a high temperature of 350 ° C or higher and can be folded into an arbitrary shape as needed to obtain a heat dissipating wrinkle 17A.
  • the paper heat sink composed of the paper material is light in weight, and the overall weight of the smart power module 10 is reduced, which is convenient for long-distance transportation and worker assembly, and reduces the cost.
  • the side of the heat sink 306 having the heat dissipation pleats 17A may be referred to as the back surface of the heat sink 306, and the opposite side may be referred to as the surface of the heat sink 306.
  • the area of the heat dissipating pleats 17A on the lower surface of the heat sink 306 is smaller than the area of the lower surface of the heat sink 306A.
  • the distance between the outer periphery of the heat dissipating pleats 17A and the outer periphery of the lower surface of the heat sink 306 is greater than 1 mm. That is, the heat dissipating pleats 17A do not completely cover the back surface of the heat sink 306, but flow out at a flat position of at least 1 mm at the edge of the back surface of the heat sink 306.
  • the lower surface of the sealing resin 12 may be flush with the back surface of the heat sink 306.
  • the sealing resin 12 can be molded by a transfer mold using a thermosetting resin, or can be molded by a injection molding using a thermoplastic resin.
  • the resin 12 completely seals all the elements on the upper surface of the paper heat sink 306.
  • a method for manufacturing an intelligent power module may include the following steps:
  • P10 manufacturing a heat sink and a lead, the upper surface of the heat sink is formed into a flat surface, and heat dissipation wrinkles are provided on the lower surface of the heat sink.
  • P20 An insulating layer is provided on the upper surface of the heat sink, and circuit wiring is provided on the upper surface of the insulating layer.
  • P30 Set circuit components and pins connected to the outside on the circuit wiring.
  • P40 Connect circuit components and circuit wiring with metal wires.
  • P50 Baking the heat sink and molding the sealing resin, and molding the pins to obtain an intelligent power module.
  • the manufacturing method of the intelligent power module of the embodiment of the invention has the beneficial effects of forming a circuit wiring on the paper heat sink and completing the order processing, and the lighter weight heat sink has low requirements for the carrier used in the processing, and the positioning is easy and the positioning is reduced.
  • the manufacturing cost, the process qualification rate is improved, the process of mounting the power component to the internal heat sink is omitted, and the equipment investment cost is reduced.
  • the intelligent power module manufactured by the above method may be the smart power module 10 according to the above embodiment of the present invention.
  • the heat sink can be a wet carbon composite functional paper heat sink.
  • step P20 the step of disposing the insulating layer is to dope at least one of spherical or horn-shaped silicon dioxide, silicon nitride, and silicon carbide in an insulating material, and then heat-pressing on the upper surface of the heat sink. .
  • a plurality of pads may be provided while a plurality of circuit wirings are provided on the upper surface of the insulating layer.
  • a plurality of circuit wirings may be disposed on the upper surface of the insulating layer, and each circuit wiring is provided with circuit components, each of which includes a power component and a non-power component, and the heat dissipation region is opposite to the power component
  • a pin connected to the outside is provided on each circuit wiring.
  • the heat sink may be further cleaned after the pins are disposed on the circuit wiring.
  • step P50 the heat sink is baked under the condition that: in an oxygen-free environment, the baking time is greater than 2 hours, and baking is performed.
  • the temperature is 110-140 °C.
  • the smart power module manufacturing method may further include step P60: performing module function testing on the smart power module.
  • the module function test includes insulation withstand voltage, static power consumption and delay time test.
  • the manufacturing process of the smart power module 10 in this embodiment may be the same as the manufacturing process of the smart power module 10 in the above embodiment, and will not be described in detail herein.
  • the manufacturing method of the power module according to the embodiment of the present invention, by forming the heat sink, the heat conduction area and the heat conduction efficiency of the power module are effectively increased, and the problem of burning or failure of the power device due to poor heat dissipation is reduced, thereby improving The reliability of the power module reduces the failure rate of the power module.
  • the centralized preparation of the heat sink in the same area does not increase the manufacturing complexity and avoids A plurality of power modules transfer heat from the operating conditions to the non-power modules.
  • the method for fabricating the power module according to the above embodiment of the present invention may further have the following additional technical features:
  • the weld zone also includes a non-power weld zone in which at least one non-power device is assembled.
  • Step Q10 includes step Q11: forming a heat sink using the wet carbon composite layer.
  • Step Q30 includes a step Q31 of forming a heat dissipating pleat on a side of the heat sink that is not in contact with the insulating layer, the heat dissipating pleat corresponding to a region where the at least one power device is located.
  • the heat sink and the heat dissipation pleat are formed by the wet carbon composite layer, thereby effectively increasing the heat dissipation area and the heat dissipation efficiency of the power module, and at the same time, the wet carbon composite layer has the pole
  • the high mechanical strength can effectively reduce the thickness of the heat sink, thereby reducing the volume of the power module.
  • step Q40 comprises:
  • the heat sink is subjected to a cleaning process, wherein the cleaning process includes a shower process and/or an ultrasonic cleaning process.
  • the power module is accurately soldered to the power pad by the first solder paste layer, and the first solder paste can be quickly heated by disassembling the erroneously mounted or damaged power module.
  • Floor The disassembly of the power module is achieved.
  • the non-power module is accurately soldered to the non-power soldering zone by the second solder paste layer, and when the erroneously mounted or damaged non-power module is removed, the same can be passed
  • the second solder paste layer is rapidly heated to realize the disassembly of the power module.
  • the surface impurities such as the group flux are effectively removed, the adhesion of the subsequent materials is enhanced, and the stress problem due to surface impurities is reduced.
  • forming an insulating layer on one side of the power module substrate includes the following specific steps: forming a thermally conductive insulating layer on one side of the power module substrate, the thermally conductive insulating layer including dioxide One or more thermally conductive insulating base layers of a silicon layer, a silicon nitride layer, and a silicon carbide layer; the thermally conductive insulating layer is subjected to a heat pressing treatment to form the insulating layer.
  • the manufacturing method of the power module by increasing the insulating layer formed by the thermally conductive insulating base layer, the short circuit between the power modules is effectively avoided, and in addition, the thermally conductive insulating base layer includes a large amount of inorganic components, further improving the power.
  • the thermal conductivity of the module by increasing the insulating layer formed by the thermally conductive insulating base layer, the short circuit between the power modules is effectively avoided, and in addition, the thermally conductive insulating base layer includes a large amount of inorganic components, further improving the power.
  • the thermal conductivity of the module by increasing the insulating layer formed by the thermally conductive insulating base layer, the short circuit between the power modules is effectively avoided, and in addition, the thermally conductive insulating base layer includes a large amount of inorganic components, further improving the power.
  • step Q30 comprises:
  • a metal seed layer is formed on a side of the insulating layer that is not in contact with the heat dissipation layer, wherein the metal seed layer has a thickness of 0.01 to 0.1 ⁇ m;
  • Q'32 plating the seed layer to form a circuit wiring, wherein the circuit wiring has a thickness of 1 to 5 microns;
  • Q'34 a metal wire is connected between the land, the lead, and the pad.
  • a soldering region and a pin are formed on a side of the insulating layer that is not in contact with the heat sink, including the following specific steps: not contacting the heat sink on the insulating layer Forming a circuit wiring on one side; etching the circuit wiring to form the solder pad, the lead and the pad; forming a metal line between the land, the pin, and the pad.
  • a circuit wiring is formed on a side of the insulating layer that is not in contact with the heat sink, and includes the following specific steps: forming a side of the insulating layer not in contact with the heat sink a metal seed layer, wherein the metal seed layer has a thickness of 0.01 to 0.1 ⁇ m; and the seed layer is subjected to a plating treatment to form the circuit wiring, wherein the circuit wiring has a thickness of 1 to 5 ⁇ m.
  • forming a sealing layer to complete the fabrication of the power module includes the following specific steps: injecting a thermoplastic resin into a molding process to form a sealing layer to complete fabrication of the power module, wherein The area of the injection molding process is the area of the power module other than the wrinkle area.
  • forming a sealing layer to complete the fabrication of the power module includes the following specific steps: performing a transfer molding process of a thermosetting resin to form a sealing layer to complete the fabrication of the power module, wherein The area of the transfer molding process is the area of the power module other than the wrinkle area.
  • a step of forming the heat sink 306 and the heat dissipation pleats 17A comprising:
  • the thickness of the insulating layer 307 may be designed to be 110 ⁇ m, and the thickness of the insulating layer 307 may be designed to be 70 ⁇ m in order to improve heat dissipation characteristics.
  • the thickness of the circuit wiring 308 can be designed to be 0.07 mm, in order to reduce the cost, the thickness of the circuit wiring 308 can be designed to be 0.035 mm or 0.0175 mm;
  • the specific position of the circuit wiring 308 is etched away, and the remaining portion is the metal wire 305 and the pad 18A, and the wet carbon composite material having a thickness of 0.5 mm is formed into an irregular shape as the heat dissipation pleats 17A.
  • the both sides are subjected to an anti-corrosion and water-repellent treatment such as application of a waterproof rubber; and the heat-dissipating pleats 17A are adhered to the back surface of the heat sink 306 using a high-temperature resistant glue having a temperature resistant to 300 ° C or higher.
  • Each of the pins 301 is made of a copper substrate. By punching or etching, the pins 301 are connected by 12 individual lead units through ribs; the individual lead units have a length C of 25 mm and a width K of 1.5. Mm, a strip of thickness H of 1 mm; sometimes, for ease of assembly, a certain arc is also pressed at one end of the pin unit; then a nickel layer is formed by electroless plating: a mixed solution of nickel salt and sodium hypophosphite And adding a suitable complexing agent to form a nickel layer on the surface of the copper material having a specific shape, which has a strong passivation ability in the metal nickel, can quickly form a very thin passivation film, can resist the atmosphere, Corrosion of alkali and certain acids.
  • the nickel-plated crystal is extremely fine, and the thickness of the nickel layer is generally 0.1 ⁇ m; then the copper material having the shape and the nickel layer is immersed in a plating solution with positive tin ions at room temperature by an acidic sulfate process, in the nickel layer.
  • the surface is formed to form a nickel-tin alloy layer, and the alloy layer is generally controlled at 5 ⁇ m, and the formation of the alloy layer greatly improves the protection and solderability.
  • a specific position of the metal wire 305 on the insulating layer 307 and the solder pad 18A are solder-coated by a solder paste printing machine using a steel mesh; here, in order to increase the height of the soldering tin, Using a steel mesh of 0.15 mm thickness, in order to reduce the risk of displacement of the power component 19 and the non-power component 14a, a steel mesh having a thickness of 0.12 mm can be used.
  • the height of the power element 19 used is 0.07 mm, which is the lightest component, so the thickness of the steel mesh is selected to be a steel mesh having a thickness of 0.12 mm.
  • the power component 19 and the non-power component 14a can be placed directly at a specific position of the metal line 305, and the pin 301 is provided at one end. It is placed on the pad 18A, and the other end requires a carrier for fixing, and the carrier is made of a material such as synthetic stone.
  • the carrier needs to perform a bottom hollowing process to expose the heat dissipating pleats 17A, and a position of the back surface of the heat sink 306 that is not covered by the heat dissipating pleats 17A at least 1 mm is in contact with the carrier. .
  • the insulating layer 307 placed on the carrier is reflowed, the solder paste is cured, and the non-power element 14a and the pin 301 are fixed.
  • solder paste having a dissolution temperature of 280 ° C can be used.
  • the heat sink 306 is placed in a washing machine for cleaning, and a flux such as rosin remaining during reflow and a foreign material such as an aluminum wire remaining during pressing are washed, and the non-power element 14a is in the metal wire 305 according to the non-power element 14a.
  • the arrangement density, the cleaning can be carried out by spraying or ultrasound or a combination of the two.
  • the pin 301 is clamped by a robot arm, and the heat sink 306 is placed in the cleaning tank, and care must be taken not to let the robot arm touch the heat sink 306 because the heat sink 306 is brittle and It is easy to deform, and if the mechanical arm holds the heat sink 306, the vibration generated during the cleaning is likely to cause the heat sink 306 to crack.
  • the aluminum wire of the appropriate diameter is selected as the bonding wire.
  • the gold wire can also be considered as the bonding wire.
  • all of the aluminum wires are selected.
  • an aluminum wire of 350 ⁇ m to 400 ⁇ m is used for bonding the power element 19, and an aluminum wire of 38 ⁇ m to 200 ⁇ m is used for bonding the non-power element 14a.
  • An aluminum wire of 350 ⁇ m to 400 ⁇ m is used for bonding the heat sink 13 .
  • the power module includes a bridge stack function module 1001, a compressor inverter function module 1002, a power factor correction module 1003, and a fan inverter function module 1004.
  • the step of forming the resin sealing layer 12a includes:
  • the heat sink 306 is baked in an oxygen-free environment, the baking time should not be less than 2 hours, the baking temperature and 125 ° C.
  • the heat sink 306 configured with the pins 301 is transferred to the model.
  • the positioning of the heat sink 306 is performed by contacting a specific portion of the pin 301 with the fixing device so that the protrusion is level with the bottom of the film cavity, and a thimble having a height of 1 mm can also be mounted at the bottom of the cavity to ensure the height. Not set too low.
  • the heat sink 306 is placed in a cavity formed inside the mold, and then the sealing resin is injected from the gate.
  • the method of performing the sealing can be carried out by transfer molding using a thermosetting resin or injection molding using a thermosetting resin. Further, the gas inside the sealing resin cavity corresponding to the injection from the gate is discharged to the outside through the exhaust port.
  • the back surface of the heat sink 306 is in close contact with the lower mold.
  • the thimble may also be added to the upper mold, but a small amount of the sealing tree may still enter the back and lower mold of the heat sink 306. Therefore, after demolding, laser etching or grinding is required to remove a small amount of sealing resin remaining on the back surface of the heat sink 306, and the back surface of the heat sink 306 is exposed from the sealing resin.
  • the upper portion of the back surface of the heat sink 306 is sealed with a resin sealing layer 12a.
  • the portion other than the lead 301 is sealed by the resin sealing layer 12a.
  • This step is required depending on the length and shape to be used.
  • the external lead 301 is cut at a position of a broken line, and sometimes bent into a certain shape to facilitate subsequent assembly.
  • the module into the test equipment, carry out the routine electrical parameter test, generally including the insulation withstand voltage, static power consumption, delay time and other test items, the test is qualified.
  • routine electrical parameter test generally including the insulation withstand voltage, static power consumption, delay time and other test items
  • the power module is completed by the above steps.
  • the present invention provides a method for manufacturing a power module.
  • the heat conduction area and the heat conduction efficiency of the power module are effectively increased, and the problem of burning or failure of the power device due to poor heat dissipation is reduced, thereby improving the reliability of the power module and reducing the failure of the power module.
  • the concentrated preparation of the heat sinks in the same area does not increase the manufacturing complexity, and at the same time, avoids the power transfer of the plurality of power modules to the non-power. Module.
  • 46(A) and 46(AA) are circuit diagrams showing an embodiment of an intelligent function module according to an embodiment of the present invention.
  • the U-phase high-voltage driving integrated tube 41, the V-phase high-voltage driving integrated tube 42, and the W-phase high-voltage driving integrated tube 43 in the intelligent function module proposed by the present invention are three single-arm HVIC tubes for driving the upper bridge arm IGBT tube, and they are The structure is exactly the same, the function is to transmit the 0 ⁇ 5V logic signal of the input terminal HIN to the output terminal HO, where HO is the logic signal of VS ⁇ VS+15V; since the VS will change between 0-300V, so
  • the U-phase high-voltage driving integrated tube 41, the V-phase high-voltage driving integrated tube 42, and the W-phase high-voltage driving integrated tube 43 need to be implemented by a high-pressure-resistant flow sheet process, and sometimes a 650V BCD process is sometimes used to reduce costs, sometimes Reduce the design of the pressure-resistant structure, using the 650V SOI process.
  • the U-phase low-voltage driving integrated tube 44, the V-phase low-voltage driving integrated tube 45, and the W-phase low-voltage driving integrated tube 46 in the intelligent function module proposed by the present invention are three-arm LVIC tubes driving the lower arm IGBT tubes, and their structures The same function is to transmit the logic signal of 0 ⁇ 5V of the input terminal LIN to the output terminal LO, wherein LO is a logic signal of 0-15V; due to the U-phase low-voltage driving integrated tube 44, the V-phase low-voltage driving integration
  • the tube 45, the W-phase low-voltage drive integrated tube 46 does not require a high-pressure-resistant flow sheet process, and sometimes a 20V Bipolar process is used to reduce costs, and sometimes a 20V BCD process is used for consistency.
  • the first low-voltage driving integrated tube 47 in the intelligent function module proposed by the present invention is a single-arm LVIC of a high-speed IGBT tube 27 that drives a power factor correction circuit portion, and in order to save cost, a 20V Bipolar process is used for streaming, for reducing work. For the consideration, a 20V BCD process can also be used.
  • the three FRD tubes, the fourth FRD tubes, the fifth FRD tubes, and the sixth FRD tubes respectively correspond to the IGBT tube 21, the IGBT tube 22, the IGBT tube 23, the IGBT tube 24, the IGBT tube 25, and the IGBT tube 26 in FIG. 46 (AA).
  • the U-phase high-voltage driving integrated tube 41, the VCC (ie, the power supply end) of the U-phase low-voltage driving integrated tube 44, the V-phase high-voltage driving integrated tube 42, and the VCC of the V-phase low-voltage driving integrated tube 45 The V-phase high-voltage driving integrated tube 43, the W-phase low-voltage driving integrated tube 44, and the VCC of the PFC driving integrated tube 47 are connected, and serve as the VDD end of the intelligent power module 10, and VDD is the intelligent power module 10.
  • the low-voltage area power supply, VDD is generally 15V.
  • the HIN end (ie, the input end) of the U-phase high-voltage driving integrated tube 41 serves as the U-phase upper arm input end UHIN of the intelligent power module 10; the HIN end of the V-phase high-voltage driving integrated tube 42 serves as the smart The V-phase upper arm input end VHIN of the power module 10; the HIN end of the W-phase high-voltage drive integrated tube 43 serves as the W-phase upper arm input end WHIN of the intelligent power module 10; the U-phase low-voltage drive integrated tube
  • the LIN end (ie, the input end) of 44 serves as the U-phase lower arm input end ULIN of the intelligent power module 10; the LIN end of the V-phase low-voltage drive integrated tube 45 As the V-phase lower arm input end VLIN of the smart power module 10; the LIN end of the W-phase low-voltage drive integrated tube 46 serves as the W-phase lower arm input end WLIN of the intelligent power module 10;
  • the PIN terminal of the low voltage drive integrated tube 47 serves as the
  • the U, V, W three-phase and PFC of the intelligent power module 10 have a total input of 0 to 5 V input signals.
  • the GND end (ie, the ground end) of the U-phase high voltage driving integrated tube 41, the GND end of the V-phase high voltage driving integrated tube 42, the GND end of the W-phase high voltage driving integrated tube 43, and the U-phase low-voltage driving integrated tube 44 a GND end, a GND end of the V-phase low-voltage driving integrated tube 45, a GND end of the W-phase low-voltage driving integrated tube 46, and a GND of the first low-voltage driving integrated tube 47, and serves as the smart power module 10
  • COM is the negative terminal of the VDD power supply.
  • the VB end of the U-phase high-voltage driving integrated tube 41 (ie, the high-voltage power supply positive end) is used as the U-phase high-voltage area power supply positive end UVB of the intelligent power module 10; the VB end of the V-phase high-voltage driving integrated tube 42 is used as The V-phase of the W-phase high-voltage power supply integrated circuit 43 of the intelligent power module 10; the VB end of the W-phase high-voltage drive integrated tube 43 serves as the W-phase high-voltage area power supply positive terminal WVB of the intelligent power module 10;
  • the HO terminal (ie, the input terminal) of the phase high voltage driving integrated transistor 41 is connected to the gate of the IGBT transistor 21, and the VS terminal (ie, the high voltage power supply negative terminal) of the U phase high voltage driving integrated transistor 41 and the IGBT tube 21 are fired.
  • the anode, the anode of the FRD tube 11, the collector of the IGBT tube 24, and the cathode of the FRD tube 14 are connected
  • the HO end of the V-phase high voltage driving integrated tube 42 is connected to the gate of the IGBT tube 22, and the V-phase high voltage drives the VS end of the integrated tube 42 and the emitter of the IGBT tube 22, the anode of the FRD tube 12, and the IGBT.
  • the collector of the tube 25, the cathode of the FRD tube 15 are connected, and serves as the V-phase high voltage region power supply negative terminal VVS of the intelligent power module 10.
  • the HO end of the W-phase high-voltage driving integrated tube 43 is connected to the gate of the IGBT tube 23, the VS end of the W-phase high-voltage driving integrated tube 43 and the emitter of the IGBT tube 23, the anode of the FRD tube 13, and the IGBT.
  • the collector of the tube 26, the cathode of the FRD tube 16 are connected, and serves as the W-phase high voltage region power supply negative terminal WVS of the intelligent power module 10.
  • the collector of the IGBT tube 21, the cathode of the FRD tube 11, the collector of the IGBT tube 22, the cathode of the FRD tube 12, the collector of the IGBT tube 23, and the cathode of the FRD tube 13 The cathode of the high-power FRD tube 18 is connected, and is used as the high-voltage input terminal P of the smart power module 10, and P is generally connected to 300V.
  • the LO end (ie, the output end) of the U-phase low-voltage driving integrated tube 44 is connected to the gate of the IGBT tube 24, and the emitter of the IGBT tube 24 is connected to the anode of the FRD tube 14 and serves as the smart power module 10 U-phase low voltage reference terminal UN.
  • the LO end of the V-phase low voltage driving integrated tube 45 is connected to the gate of the IGBT tube 25, and the emitter of the IGBT tube 25 is connected to the anode of the FRD tube 15 and serves as the V-phase low voltage of the intelligent power module 10.
  • Reference terminal VN is connected to the gate of the IGBT tube 25, and the emitter of the IGBT tube 25 is connected to the anode of the FRD tube 15 and serves as the V-phase low voltage of the intelligent power module 10.
  • the LO end of the W-phase low voltage drive integrated tube 46 is connected to the gate of the IGBT tube 26, the emitter of the IGBT tube 26 is connected to the anode of the FRD tube 16, and serves as the W-phase low voltage of the intelligent power module 10.
  • Reference terminal WN is connected to the gate of the IGBT tube 26.
  • the POUT end of the first low voltage driving integrated tube 47 is connected to the gate of the high speed IGBT tube 27, the emitter of the high speed IGBT tube 27 is connected to the anode of the low power FRD tube 17, and the collector of the high speed IGBT tube 27 Connected to the cathode of the low power FRD tube 17, the anode of the high power FRD tube 18.
  • the low power FRD tube 17 herein is not required, and may not be accessed in other embodiments.
  • Figure 46(B) is a plan view of a preferred embodiment of the intelligent function module of the present invention
  • Figure 46(C) is the X of Figure 46(B).
  • Fig. 46 (D) is a front plan view of the intelligent function module of the embodiment of the present invention with the sealing resin removed.
  • the smart power module 10 of the present invention has a paper heat sink 306 having an insulating layer 307 formed on its surface, a circuit wiring 308 disposed on the insulating layer 307, and the IGBT tube disposed on the circuit wiring 308. 21.
  • the HVIC tube 43, the LVIC tube 44, the LVIC tube 45, and the LVIC tube 46 are disposed on the carrier tray 309 and the FRD tube 11, the FRD tube 12, and the FRD tube.
  • the FRD tube 14, the FRD tube 15, the FRD tube 16, the low power FRD tube 17, and the high power FRD tube are disposed at a pin 301 of an edge portion of the circuit wiring 18, among them:
  • One side of the heat sink 306 has a front side and the other side has a back side.
  • the front surface of the heat sink 306 is covered with an insulating layer 307 which is disposed on one side of the insulating layer 307 away from the heat sink 306.
  • the heat sink 306 and the wrinkles 320 may each be a wet carbon composite functional paper.
  • the heat sink 306 and the pleats 320 may be bonded by high temperature glue, or may be integrally formed of both.
  • the smart power module 10 further includes: a pin 301 disposed at an edge portion of the circuit wiring 308 for connecting a metal wire 305 that electrically connects the respective elements, and sealing the circuit and at least completely covering The sealing resin 302 of all the elements described above on the upper surface of the paper heat sink 306.
  • the smart power module 10 further includes: the circuit wiring 308, the IGBT tube 21, the IGBT tube 22, the IGBT tube 23, the IGBT tube 24, the IGBT tube 25, The IGBT tube 26 and the FRD tube 11, the FRD tube 12, the FRD tube 13, the FRD tube 14, the FRD tube 15, the FRD tube 16, and the FRD tube 17 are configured accordingly.
  • the metal line 305 of the circuit is configured accordingly.
  • the smart power module 10 further includes a pin 301 disposed at an edge of the power module, connected to the circuit wiring 308, and extending outward as an input and output.
  • the pin 301 can be disposed on one edge, two edges, three edges or four edges of the smart power module 10 according to the internal circuit layout of the smart power module 10 and the peripheral application requirements.
  • the paper heat sink 306 is a wet carbon composite functional paper, which can be processed into a graphite by a composite of powder and fibrous carbon materials.
  • the material can withstand a high temperature of 350 ° C or higher and can be folded into any shape as needed to obtain the heat dissipation. Wrinkles 320.
  • the surface may be subjected to a water repellent treatment; the paper heat sink 306 is integrally formed with the heat dissipation pleats 320, wherein the paper heat sink 306 is flat in shape, and the heat dissipation pleats 320
  • the paper heat sink 306 and the heat dissipating pleats 320 may also be wet carbon composite materials of different thicknesses, and the embodiment uses different thicknesses, wherein, in order to increase mechanical strength,
  • the paper heat sink 306 is made of a thick wet carbon composite material and has a thickness of 1.5 mm.
  • the heat-dissipating pleats 320 are made of a thin wet carbon composite material and have a thickness of 0.5 mm.
  • the side of the paper heat sink 306 having the heat dissipation pleats 320 is referred to as the back surface of the paper heat sink 306, and the opposite surface is referred to as the surface of the paper heat sink 306.
  • the heat dissipation pleats 320 cannot completely cover the back surface of the paper heat sink 17, and a flat position of at least 1.5 mm needs to be left at the edge of the back surface of the paper heat sink 306.
  • the insulating layer 307 covers one surface of the paper heat sink 306, which is called the front surface of the paper heat sink 306, and is filled with a filler such as alumina in a resin material such as epoxy resin to improve thermal conductivity. It is also possible to add doping such as silicon dioxide, silicon nitride, silicon carbide or the like to achieve higher thermal conductivity. Here, the doping may be spherical or angular, and is pressed into the paper heat sink by hot pressing. The surface of 306.
  • the circuit wiring 308 is made of metal such as copper, and is formed at a specific position on the paper heat sink 306, and can be designed to have a thickness of 0.035 mm or 0.07 mm according to power requirements. For a general intelligent power module, priority is given. Designed to be 0.07 mm, a thickness of 0.07 mm is used in this embodiment.
  • the circuit wiring 308 for arranging the pins 301 is formed at the edge of the paper heat sink 306, the circuit wiring 308 for arranging the pins 301 is formed.
  • a plurality of the circuit wirings 308 for arranging the pins 301 are disposed in the vicinity of both sides of the paper heat sink 306, and may be on one side and both sides of the paper heat sink 306 according to functional requirements.
  • a plurality of the circuit wirings 308 for configuring the pins 301 are disposed near the three sides and the four sides.
  • the IGBT tubes 21 to 27 and the FRD tubes 11 to 18 are fixed to the circuit wiring 308 to constitute a predetermined circuit.
  • the seven IGBT tubes have an emitter and a gate face up, and a collector having a face down, and the FRD tube has an anode face up and a cathode face down.
  • the HVIC tube 41 is fixed to the IGBT tube 21, the HVIC tube 42 is fixed to the IGBT tube 22, the HVIC tube 43 is fixed to the IGBT tube 23, and the LVIC tube 44 is fixed.
  • the LVIC tube 45 is fixed to the IGBT tube 25, and the LVIC tube 46 is fixed to the IGBT tube 26.
  • the position where the HVIC tube and the LVIC tube are fixed on the IGBT tube is the emitter of the IGBT tube, and for a general 30A IGBT tube, the area of the emitter is not less than 6 mm 2 for a general one-arm HVIC tube. And single-arm LVIC tube, the area will not be greater than 2mm 2 .
  • the thickness of the tray 309 is designed to be 1 mm.
  • the intelligent power module with a current capacity of 30 A or more can also be designed to be 1.5 to 2 mm.
  • the intelligent power module below 15 A current capability can be used.
  • the tray-mounted 309-mounted FRD tube is provided with a flat portion
  • one side of the tray 309 on which the FRD tube is mounted is provided with a plurality of protrusions 310 at the edge away from the flat portion, and the height of the protrusion portion 310
  • the number of the protrusions 310 may be five in order to improve the flow capacity
  • the number of the protrusions 310 may be 2 in order to simplify the process. In this embodiment, three are designed.
  • the cathodes of the FRD tubes 11 to 16 are fixed on the flat portion of the front surface of the tray 309, and the FRD tubes 11 to 16 have the anode face up;
  • the anodes of the FRD tubes 11 to 16 are respectively connected to the emitters of the IGBT tubes 21 to 26 through conductive solders such as silver paste, solder paste, etc., and the protrusions 310 are passed through conductive solder such as silver paste or solder paste. And, respectively, connected to the circuit wiring 308 connected to the collectors of the IGBT tubes 21 to 26; here, the current capability of the FRD tube is generally designed to correspond to the IGBT tube Less than half, therefore, the area of the FRD tube is generally much smaller than the area of the IGBT tube. Therefore, after the anode of the FRD tube is completely in contact with the emitter of the IGBT tube, part of the anode and the gate of the IGBT tube are exposed.
  • conductive solders such as silver paste, solder paste, etc.
  • the HVIC tubes 41 to 46 are respectively fixed to the circuit wiring 308 which is very close to the IGBT tubes 21 to 26.
  • the metal wire 305 may be an aluminum wire, a gold wire or a copper wire, and an electrical connection relationship is established between each circuit component and the circuit wiring 308 by bonding, and sometimes used to make the pin 301 and the circuit wiring 308. Establish an electrical connection relationship.
  • the pin 301 is fixed to the circuit wiring 308 provided at the edge of the paper heat sink 306, and has a function of inputting and outputting, for example, with the outside.
  • a conductive adhesive such as solder.
  • the lead 301 is generally made of a metal such as copper.
  • the surface of the copper is formed by electroless plating and electroplating to form a layer of nickel-tin alloy.
  • the thickness of the alloy layer is generally 5 ⁇ m.
  • the coating can protect the copper from corrosion and oxidation, and can be soldered. Sex.
  • the resin 302 may be molded by a transfer molding using a thermosetting resin or may be molded using a thermoplastic resin using an injection mold.
  • the smart power module 10 of the embodiment of the present invention has the following beneficial effects:
  • the low-voltage area driving circuit of the intelligent power module is realized by the LVIC tube
  • the high-voltage area driving circuit is realized by the HVIC tube
  • the LVIC tube can be realized by the low-cost process such as BIPOLAR or COMS
  • the HVIC tube is realized by the high-voltage process such as BCD or SOI.
  • the former has a process cost of only 1/3 of the latter, which reduces the manufacturing cost of the intelligent power module.
  • the intelligent power module of the present invention is arranged on the corresponding IGBT tube by independent HVIC tubes or LVIC tubes, and the traces from the HVIC tube or the LVIC tube to the gate of the IGBT tube can be consistent, thereby effectively ensuring 6 IGBTs.
  • the consistency of the dynamic characteristics of the tube, the rising edge and the falling edge of an IGBT for power factor correction can be very steep, and the area of the circuit wiring is largely saved, thereby reducing the area of the circuit substrate of the intelligent power module. The cost of the intelligent power module is further reduced.
  • the power module structure of the present invention can adopt a small inductance and capacitance, the reduction of the distributed inductance and capacitance greatly reduces the dynamic power consumption of the intelligent power module of the present invention, and the present invention uses a paper heat sink instead of the circuit.
  • the FRD tube and the IGBT tube are placed three-dimensionally, increasing the contact area, minimizing the length of the trace between the power components, and saving the metal wire for connection, further reducing the area and making the cost of the intelligent power module again. reduce.
  • the smart power module 10 of the present invention reduces the size and weight while reducing the cost, and improves the heat dissipation effect.
  • an embodiment of the present invention further provides a method for manufacturing an intelligent power module 10, including:
  • Step S1 forming a paper heat sink 306, covering the front surface of the heat sink 306 with an insulating layer 307, forming a circuit wiring 308 on the surface of the insulating layer 307;
  • a predetermined size of the wet carbon composite material is selected according to the set circuit layout to form a paper heat sink 306.
  • an insulating material and a copper material are used, and an insulating material is formed by heat pressing.
  • the surface of the heat sink 306 is used as the insulating layer 307, and a copper material is formed on the surface of the insulating layer 307 as a copper foil layer.
  • step S2 IGBT tubes 21 to 27, FRD tubes 11 to 18, HVIC tubes 41 to 43, LVIC tubes 44 to 46, and pre-formed pins 301 are mounted on the surface of the circuit wiring 308, and FRD is mounted on the carrier tray. Tubes 11 to 16;
  • step S3 HVIC tubes 41 to 43, LVIC 44 to 47 tubes, and FRD tubes 11 to 16 are mounted at the emitter positions of the IGBT tubes 21 to 26, respectively;
  • step S4 the IGBT tubes 21 to 27, the FRD tubes 11 to 18, the HVIC tubes 41 to 43, the LVIC tubes 44 to 47, and the circuit wiring 308 are connected by a metal wire 305 to form a corresponding circuit;
  • Step S5 sealing the front surface of the heat sink 306 by a sealing resin 302;
  • Step S6 covering the back surface of the heat sink 306 wrinkles 320;
  • the wrinkle 320 is formed using a wet carbon composite material, and bonded to the back surface of the heat sink 306 by a high temperature resistant glue.
  • step S2 the method may further include:
  • step S7 a separate coated pin 301 is formed.
  • a copper substrate is selected, and a row of pins 301 are formed by punching or etching the copper substrate, and the pins 301 are connected by reinforcing ribs.
  • a nickel layer and a nickel-tin alloy layer are sequentially formed on the surface of the lead 301 to obtain a plated lead 301.
  • the method further includes:
  • step S8 the rib forming of the pin 301 is performed, and the module function test is performed.
  • the manufacturing method of the smart power module 10 of the present invention may include the steps of: providing an insulating layer 307 on the surface of the paper heat sink 306; forming a circuit wiring 308 on the surface of the insulating layer 307; and arranging the IGBT tubes 21-27 in the circuit wiring 308.
  • the specific process diagram is shown in Fig. 53 and Fig. 53 (A).
  • Fig. 47 (A) is a plan view showing an insulating layer and a copper foil layer formed on the front surface of the paper heat sink in the first step of the embodiment of the present invention
  • Fig. 47 (B) is a side view of Fig. 47 (A).
  • the first step of the embodiment of the present invention is a step of forming an insulating layer on a paper heat sink of a suitable size and forming a circuit wiring on the surface of the insulating layer.
  • a paper heat sink 306 of a suitable size is prepared according to the required circuit layout.
  • a size of 44 mm ⁇ 20 mm can be selected, and both sides are subjected to anti-corrosion treatment.
  • An insulating layer 307 is provided on the surface of at least one surface of the aluminum substrate.
  • a conductive pattern is pasted on the surface of the insulating layer. Copper foil. Then, the copper foil produced in this step is etched, and the copper foil is partially removed to form a circuit wiring 308.
  • a paper heat sink of a suitable size can be formed by directly cutting a 1 m ⁇ 1 m profile, or by cutting a 1 m ⁇ 1 m profile.
  • Fig. 48 (AA) is a plan view showing the mounting of the IGBT tube, the FRD tube and the lead on the circuit wiring in the second step of the embodiment of the present invention
  • Fig. 48 (BB) is a side view of Fig. 48 (AA).
  • the second step of the present invention is a step of mounting the IGBT tubes 21 to 27, the FRD tubes 11 to 18, and the leads 301 on the circuit wiring 308.
  • IGBT tubes 21 to 27, FRD tubes 11 to 18, and leads 301 are attached to predetermined positions of circuit wiring 308 by solder such as solder paste.
  • solder paste soldering in order to reduce the void ratio after solder paste soldering and to perform cost control, it is conceivable to use a reflow furnace with nitrogen protection for solder paste fixing, and if the cost permits, vacuum reflow may also be considered.
  • the melting temperature of the solder paste is generally around 280 °C.
  • Each of the leads 301 is formed of a copper substrate by stamping or etching to form a lead 301. Then, a nickel layer is formed on the surface of the lead by electroless plating, including:
  • a nickel layer is formed on the surface of the copper material having a specific shape, and the metal nickel has a strong passivation ability and can rapidly form a very thin layer. Passivation film that resists corrosion from the atmosphere, alkalis and certain acids.
  • the nickel plating crystal is extremely fine, and the thickness of the nickel layer is generally 0.1 ⁇ m.
  • an acid sulfate process is used to immerse the copper material having a shape and a nickel layer in a plating solution with a positive tin ion at room temperature to form a nickel-tin alloy layer on the surface of the nickel layer, and the alloy layer is generally controlled at 5 ⁇ m.
  • the formation of the alloy layer greatly improves the protection and solderability of the leads.
  • FIG. 48(A) is a plan view showing the mounting of an IGBT tube, an HVIC tube, an LVIC tube, and a pre-formed lead on the surface of the circuit wiring in the second step of the embodiment of the present invention, and mounting the FRD tube on the carrier tray
  • FIG. 48 (B) is a side view of FIG. 48(A)
  • FIG. 48(C) is a bottom view of the tray in the second step of the embodiment of the present invention
  • FIG. 48(D) is a view of the second step of the embodiment of the present invention. Front view of the tray.
  • the second step is a step of mounting the IGBT tubes 21 to 26, the HVIC tubes 41 to 43, the LVIC tubes 44 to 46, and the leads 301 on the circuit wiring 308, and mounting the FRD tubes 11 to 16 on the carrier tray.
  • IGBT tubes 21 to 26, HVIC tubes 41 to 43, LVIC tubes 44 to 46, and leads 301 are attached to predetermined positions of circuit wiring 308 by solder such as solder paste.
  • the FRD tubes 11 to 16 are attached to a specific position of the side of the tray 309 having the protrusions 310 by solder such as tin wire, because the FRD tubes 11 to 16 do not directly contact the heat sink, so The hole rate reduces heat build-up and is soldered using eutectic soldering.
  • FIG. 49 (AA) is a third step of the embodiment of the present invention in which the HVIC tube and the LVIC tube are mounted on the emitter of the IGBT tube.
  • Fig. 49 (BB) is a side view of Fig. 49 (AA).
  • HVIC tubes 41 to 43 and LVIC tubes 44 to 46 are mounted at the emitter positions of the IGBT tubes 21 to 27. And the process of driving the integrated tube 47 with the PFC.
  • the HVIC tube 41 is mounted on the IGBT tube 21
  • the HVIC tube 42 is mounted on the IGBT tube 22
  • the HVIC tube 43 is mounted on the IGBT tube 23
  • the IGBT tube 24 is mounted on the IGBT tube 24.
  • the HVIC tube 44 is mounted
  • the HVIC tube 45 is mounted on the IGBT tube 25
  • the HVIC tube 46 is mounted on the IGBT tube 26
  • the PFC drive integrated tube 47 is mounted on the high speed IGBT tube 27.
  • the back surface of the HVIC tube and the LVIC tube is not an electrode such as GND, silver paste or the like having conductivity may be used as a fixing material. If the back surface of the HVIC tube and the LVIC tube is an electrode such as GND, a non-conductive red color may be used. Glue or the like is used as a fixing material.
  • the silver paste or the red glue is cured by baking at 175 ° C, where the curing temperature of the silver or red glue is about 170 ° C, and the curing time is about 2 hours. Because the baking temperature is much lower than the melting temperature of the solder paste, the soldering effect of the IGBT tube, the FRD tube and the leads is not affected during the heating process.
  • FIG. 49(A) is a plan view of the emitter-mounted FRD tube of the IGBT tube in the third process of the embodiment of the present invention
  • FIG. 49(B) ) is a side view of Fig. 49 (A).
  • the third step of the present invention is a step of mounting the FRD tubes 11 to 16 at the emitter positions of the IGBT tubes 21 to 26.
  • the FRD tube 11 is mounted on the IGBT tube 11
  • the FRD tube 12 is mounted on the IGBT tube 22
  • the FRD tube 13 is mounted on the IGBT tube 23
  • the IGBT tube 24 is mounted on the IGBT tube 24.
  • the FRD tube 14 is mounted
  • the FRD tube 15 is mounted on the IGBT tube 25
  • the FRD tube 16 is mounted on the IGBT tube 26.
  • silver paste or the like having conductivity may be used as a fixing material, at a specific position of the emitter of the IGBT tube and the circuit wiring 308 connected to the collector of the IGBT tube.
  • a specific position a silver paste of a suitable shape and thickness, and an anode of the FRD tube is disposed at a position where the emitter of the IGBT tube has a silver paste, and a protrusion 310 of the tray 309 where the FRD tube is disposed is disposed.
  • the position of the circuit wiring 308 connected to the collector of the IGBT tube has a silver paste.
  • FIG. 50 (AA) is a fourth process of the embodiment of the present invention, the power component, the non-power component, and the heat dissipation are performed by the metal wire.
  • a top view of the connection between the device and the circuit wiring is formed, and
  • FIG. 50 (BB) is a side view of FIG. 50 (AA).
  • the fourth step of the present invention is a step of forming an electrical connection between the circuit component and the circuit wiring 308 via the metal wire 305.
  • the IGBT tubes 21 to 27, the FRD tubes 11 to 18, the HVIC tubes 41 to 43, the LVIC tubes 44 to 46, the PFC driving integrated tube 47, and the circuit wiring 308 are wired. connection.
  • FIG. 50(A) shows the IGBT tube, the FRD tube, the HVIC tube, and the LVIC tube through the metal wire in the fourth process of the embodiment of the present invention.
  • a top view of the circuit is formed by connecting the circuit wiring
  • FIG. 50(B) is a side view of FIG. 50(A).
  • the fourth step of the present invention is a step of forming an electrical connection between the circuit component and the circuit wiring 308 via the metal wire 305.
  • the IGBT tubes 21 to 26, the FRD tubes 11 to 16, the HVIC tubes 41 to 43, the LVIC tubes 44 to 46, and the circuit wiring 308 are connected in a state.
  • the aluminum wire of the appropriate diameter is selected as the bonding wire.
  • the bonding wire For the parts used for signal control, such as the HVIC tube and the LVIC tube, it is also conceivable to use a 15 ⁇ m gold wire or a 38 ⁇ m aluminum wire as the bonding wire.
  • the bonding uses an aluminum wire of 200 ⁇ m to 400 ⁇ m.
  • the mode of the first state thick line and the fine line of the state can be selected; for the anti-static consideration, the mode of the first state thin line and the state thick line can be selected. Specifically, it depends on the vibration amplitude of the machine and the anti-static effect of the machine head.
  • the fifth step of the present invention is a step of sealing the paper heat sink 306 with the sealing resin 302.
  • the paper heatsink 306 configured with the pins 301 is transported to the models 44 and 45.
  • the positioning of the paper heat sink 306 is performed by contacting a particular portion of the pin 301 with the fixture 46.
  • a paper heat sink 306 is placed in a cavity formed inside the mold 50, and then the sealing resin 302 is injected from the gate 53.
  • the method of performing the sealing can be carried out by transfer molding using a thermosetting resin or injection molding using a thermosetting resin. Further, the gas inside the cavity of the sealing resin 302 corresponding to the injection from the gate 53 is discharged to the outside through the exhaust port 54.
  • the side having the pin 301 is not completely selected, that is, the upper side of FIG. 50(A), and for the selection of the exhaust port 54, one side of the pin 301 should be selected, that is, the figure is selected. Below 50 (A).
  • the back surface of the paper heat sink 306 is in close contact with the lower mold 45, but a small amount of the sealing resin 302 still enters between the back surface of the paper heat sink 306 and the lower mold 45, and thus, After demolding, laser etching or polishing is required to remove a small amount of sealing resin 302 remaining on the back surface of the paper heat sink 306, so that the back surface of the paper heat sink 306 is exposed from the sealing resin 302 and is flat.
  • the upper portion of the back surface of the paper heat sink 306 is sealed by the sealing resin 302.
  • FIG. 52(A) is a schematic view showing the cutting of the lead in the sixth step of the embodiment of the present invention
  • FIG. 52(B) is an embodiment of the present invention.
  • a schematic diagram of the heat dissipation wrinkles is installed.
  • the sixth step of the present invention is a step of performing the 301 forming of the lead 301, assembling the heat dissipating wrinkles, and performing the function test of the module, and the intelligent power module is completed as a product through this process.
  • the portion other than the lead 301 is sealed by the resin 302.
  • This step is required depending on the length and shape to be used.
  • the external lead 301 is cut at a position of a broken line, and as shown in Fig. 52(A), it may be bent into a shape to facilitate subsequent assembly.
  • the heat dissipation pleats 320 are adhered to the back surface of the paper heat sink 306 using a high temperature resistant glue having a temperature resistance of 150 ° C or higher, and the heat dissipation pleats 320 may be completely covered in order to improve heat dissipation.
  • the portion of the back surface of the paper heat sink 306 exposed from the thermosetting resin frame 13a, in order to reduce cost, the heat dissipating wrinkle 320 may completely cover only the paper heat sink 306 having the power element 19 at the upper portion. The back.
  • the module into the test equipment, carry out the routine electrical parameter test, generally including the insulation withstand voltage, static power consumption, delay time and other test items, the test is qualified.
  • routine electrical parameter test generally including the insulation withstand voltage, static power consumption, delay time and other test items
  • the smart power module 10 shown in Fig. 46 is completed by the above steps.
  • the invention provides an intelligent power module and a manufacturing method thereof.
  • the FRD tube and the IGBT tube of the power device in the power component are stereoscopically placed through the tray, which increases the contact area and minimizes the length of the trace between the power components, thereby saving
  • the metal wires used for connection greatly reduce the area of the circuit wiring and reduce the cost of the intelligent power module.
  • the invention also provides a control circuit of an intelligent power module, an intelligent power module and a manufacturing method thereof, and intelligent power
  • the low-voltage driving circuit of the module is realized by the low-voltage driving integrated tube.
  • the high-voltage driving circuit is realized by the high-voltage driving integrated tube.
  • the low-voltage driving integrated tube can be realized by the low-cost process such as BIPOLAR or COMS, and the high-voltage driving integrated tube passes the BCD or SOI.
  • the former has a process cost of only 1/3 of the latter, which greatly reduces the manufacturing cost of the intelligent power module.
  • the intelligent power module of the present invention is disposed on the corresponding IGBT tube by independent high-voltage driving integrated tubes or low-voltage driving integrated tubes, and the wiring from the high-voltage driving integrated tube or the low-voltage driving integrated tube to the gate of the IGBT tube can be consistent. Therefore, the dynamic characteristics of the six IGBT tubes can be effectively ensured, and the rising edge and the falling edge of the IGBT for power factor correction can be made very steep, and the area of the circuit wiring can be saved a lot, thereby making the smart power The area of the circuit board of the module is greatly reduced, and the cost of the intelligent power module is further reduced.
  • the power module structure of the present invention can adopt a smaller inductance and capacitance, and the reduction of the distributed inductance and capacitance greatly reduces the dynamic power consumption of the intelligent power module of the present invention, and the present invention uses a paper heat sink instead of the circuit.
  • the substrate uses heat dissipation wrinkles instead of the aluminum heat sink, so that the smart power module itself has good heat dissipation effect, the external heat sink is not needed, and the heat sink is paper, which greatly reduces the weight of the intelligent power module, material cost, transportation The cost has also dropped significantly.
  • the terms “installation”, “connected”, “connected”, “fixed” and the like shall be understood broadly, and may be either a fixed connection or a detachable connection, unless explicitly stated and defined otherwise. , or integrated; can be mechanical connection, or can be electrical connection; can be directly connected, or can be indirectly connected through an intermediate medium, can be the internal communication of two elements or the interaction of two elements.
  • installation can be understood on a case-by-case basis.
  • the description of the terms “one embodiment”, “some embodiments”, “example” and the like means that the specific features, structures, materials or features described in connection with the embodiments or examples are included in the invention. At least one embodiment or example.
  • the schematic representation of the above terms is not necessarily directed to the same embodiment or example.
  • the particular features, structures, materials, or characteristics described may be combined in a suitable manner in any one or more embodiments or examples.
  • various embodiments or examples described in the specification, as well as features of various embodiments or examples may be combined and combined.

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Abstract

一种智能功率模块及其制造方法。其中，智能功率模块包括：散热器、绝缘层、电路布线、电路元件和金属线。散热器的至少部分下表面为散热区域，散热区域上设有散热褶皱，绝缘层设在散热器的上表面上，电路布线设在绝缘层上，电路元件设在电路布线上并通过金属线与电路布线连接。

Description

智能功率模块及其制造方法 技术领域
本发明属于电子器件制造工艺领域，尤其涉及一种智能功率模块及其制造方法。
背景技术
智能功率模块，即IPM(Intelligent Power Module)，是一种将电力电子和集成电路技术结合的功率驱动类产品。智能功率模块把功率开关器件和高压驱动电路集成在一起，并内藏有过电压、过电流和过热等故障检测电路。智能功率模块一方面接收MCU的控制信号，驱动后续电路工作，另一方面将系统的状态检测信号送回MCU。与传统分立方案相比，智能功率模块以其高集成度、高可靠性等优势赢得越来越大的市场，尤其适合于驱动电机的变频器及各种逆变电源，是变频调速，冶金机械，电力牵引，伺服驱动，变频家电的一种理想电力电子器件。
由于智能功率模块一般工作在高温环境中，并且智能功率模块内的功率器件在工作时会发出大量的热，导致功率器件的结温很高，虽然电路基板具有散热作用，但是因为所述绝缘层的存在，导致所述智能功率模块的整体热阻较高。长期高温环境会严重降低智能功率模块的使用寿命，并且会影响智能功率模块性能的稳定性。尤其在极端情况下，会导致智能功率模块在工作过程中因内部器件过热而失控爆炸，造成人员伤亡和财产损失。
智能功率模块的功率器件在工作时会发出大量的热，导致功率器件的结温很高，虽然电路基板具有散热作用，但是因为绝缘层的存在，导致智能功率模块的整体热阻较高。并且，由于电路基板的导热，使功率器件的热量传递到其他器件中，使其他器件的电参数发生不可忽略的温飘。
选用高导热绝缘层和增加散热器是解决现行智能功率模块散热问题的主要方法。但是高导热绝缘层一方面成本非常高，另一方面由于高导热绝缘层使用了大量的参杂导致硬度很大，从而增加了智能功率模块的制造难度。如果采用在智能功率模块的内部增加散热器，然后将功率元件贴装在散热器上的方法，一方面会增加原材料成本，另一方面会增加智能功率模块的工艺难度。如果在智能功率模块的外部增加散热器，需要将散热器贴装在智能功率模块背面，一方面增加应用成本，另一方面增加了装配难度，都对智能功率模块的应用推广制造了困难，不利于智能功率模块在民用场合的普及。
发明内容
本发明旨在至少在一定程度上解决相关技术中的技术问题之一。为此，本发明提出了一种智能功率模块，所述智能功率模块的散热性好且制造难度低。
本发明还提出了多种智能功率模块的制造方法。
根据本发明实施例的智能功率模块，包括：散热器，所述散热器的至少部分下表面为散热区域，所述散热区域上设有散热褶皱；绝缘层，所述绝缘层设在所述散热器的上表面 上；电路布线，所述电路布线设在所述绝缘层上；电路元件，所述电路元件设在所述电路布线上并通过金属线与所述电路布线连接。
根据本发明实施例的智能功率模块，通过在散热器下表面上设置散热褶皱，使电路元件的大部分热量被迅速散出，使智能功率模块始终工作在低温环境中，从而提高了智能功率模块的电性能和热稳定性。
在一些实施例中，所述散热器为具有湿式碳素复合材料功能纸质散热器或所述散热器为由可耐受350℃以上温度的绝缘材料制作而成的纸质散热器。
在一些实施例中，所述散热褶皱为多个，多个所述散热褶皱间隔设置或多个所述散热褶皱连续设置。
在一些实施例中，所述散热褶皱的外周缘与所述散热器的下表面的外周缘之间间隔的距离大于1mm。
在一些实施例中，所述散热区域向下凸出形成凸台，所述散热褶皱设在所述凸台上。
在一些实施例中，所述智能功率模块还包括嵌套在所述智能功率模块外围的框架结构，所述框架结构包括环绕在所述智能功率模块侧面的环形框和由所述环形框底部垂直向内侧延伸形成的与所述散热器底部接触的延伸部，所述延伸部的厚度为1mm～1.5mm。
在一些实施例中，所述电路布线为间隔开的多个，所述智能功率模块还包括多个引脚，多个所述引脚的一端分别与多个所述电路布线相连，另一端与外部相连。
在一些实施例中，所述绝缘层的至少一侧的边缘设有多个焊垫，多个所述引脚的另一端分别与多个所述焊垫连接。
在一些实施例中，所述散热器在上下方向上的厚度为1.2mm-2.5mm，所述散热褶皱沿上下方向延伸的尺寸为0.3mm-0.7mm。
在一些实施例中，所述智能功率模块还包括密封树脂，所述密封树脂完全密封所述电路布线和所述电路元件，所述密封树脂覆盖所述散热器的上表面和所述散热区域之外的区域。
在一些实施例中，所述电路元件包括功率元件和非功率元件，所述功率元件和非功率元件均设在所述电路布线上，所述功率元件和非功率元件分别通过所述金属线与所述电路布线电连接，所述功率元件与所述散热区域相对，所述功率元件与所述非功率元件之间具有隔断部，所述隔断部设置在散热器的下表面上对应的位置处，所述隔断部的宽度为1mm～5mm。
在一些实施例中，所述功率器件包括IGBT管和与所述IGBT管连接的FRD管，所述FRD管底部设置有承托盘，所述FRD管倒扣在所述IGBT管的预定位置上且所述FRD管的顶部与所述IGBT管接触，所述承托盘通过所述电路布线与所述IGBT管相连。
在一些实施例中，所述承托盘安装所述FRD管的一面设有平坦部，且所述承托盘安装所述FRD管的一面在远离所述平坦部的边缘设有若干用于连接所述电路布线的突起部。
在一些实施例中，所述功率器件为六个，分别为三个上桥臂功率器件和三个下桥臂功率器件，所述功率元件还包括分别与所述三个上桥臂功率器件对应连接的U相高压驱动集 成管、V相高压驱动集成管、W相高压驱动集成管，和分别与所述三个下桥臂功率器件对应连接的U相低压驱动集成管、V相低压驱动集成管、W相低压驱动集成管；
所述智能功率模块还包括功率因数校正电路，所述功率因数校正电路具有桥堆、压缩机逆变以及功率因素校正功能或者具有桥堆、压缩机逆变、功率因素校正以及风机逆变功能，所述功率因数校正电路分别与所述U、V、W相高压驱动集成管和所述U、V、W三相低压驱动集成管相连。
在一些实施例中，所述三个上桥臂功率器件分别为第一功率器件、第二功率器件、第三功率器件，所述三个下桥臂功率器件分别为第四功率器件、第五功率器件、第六功率器件；
所述第一功率器件包括第一IGBT管和第一FRD管，所述第二功率器件包括第二IGBT管和第二FRD管，所述第三功率器件包括第三IGBT管和第三FRD管，所述第四功率器件包括第四IGBT管和与第四FRD管，所述第五功率器件包括第五IGBT管和第五FRD管，所述第六功率器件包括第六IGBT管和第六FRD管；
所述U、V、W三相高压驱动集成管包括电源端、输入端、输出端、高压电源正端、高压电源负端和接地端，所述U、V、W三相低压驱动集成管包括电源端、输入端、输出端和接地端，其中：
所述U、V、W三相高压驱动管的输入端分别作为所述智能功率模块的U、V、W三相上桥臂输入端；所述U、V、W三相低压驱动管的输入端分别作为所述智能功率模块的U、V、W三相下桥臂输入端；
所述U、V、W三相高压驱动管和所述U、V、W三相低压驱动集成管的电源端相连并作为所述智能功率模块的低压区供电电源的正端，所述U、V、W三相高压驱动管和所述U、V、W三相低压驱动集成管的接地端相连作为所述智能功率模块的低压区供电电源的负端，所述U、V、W三相高压驱动管的高压电源正端分别作为所述智能功率模块的U、V、W三相高压区供电电源的正端；
所述U相高压驱动集成管的输出端与所述第一IGBT管的栅极相连，所述U相高压驱动集成管的高压电源负端与所述第一IGBT管的射极、所述第一FRD管的阳极、所述第四IGBT管的集电极、所述第四FRD管的阴极相连，并作为所述智能功率模块的U相高压区供电电源的负端；所述V相高压驱动集成管的输出端与所述第二IGBT管的栅极相连，所述V相高压驱动集成管的高压电源负端与所述第二IGBT管的射极、所述第二FRD管的阳极、所述第五IGBT管的集电极、所述第五FRD管的阴极相连，并作为所述智能功率模块的V相高压区供电电源的负端；所述W相高压驱动集成管的输出端与所述第三IGBT管的栅极相连，所述W相高压驱动集成管的高压电源负端与所述第三IGBT管的射极、所述第三FRD管的阳极、所述第六IGBT管的集电极、所述第六FRD管的阴极相连，并作为所述智能功率模块的W相高压区供电电源的负端；
所述第一IGBT管的集电极、所述第一FRD管的阴极、所述第二IGBT管的集电极、所述第二FRD管的阴极、所述第三IGBT管的集电极、所述第三FRD管的阴极相连，并 作为所述智能功率模块的高电压输入端；
所述U相低压驱动集成管的输出端与第四IGBT管的栅极相连，所述第四IGBT管的射极与所述第四FRD管的阳极相连，并作为所述智能功率模块的U相低压参考端，所述V相低压驱动集成管的输出端与第五IGBT管的栅极相连，所述第五IGBT管的射极与所述第五FRD管的阳极相连，并作为所述智能功率模块的V相低压参考端，所述W相低压驱动集成管的输出端与第六IGBT管的栅极相连，所述第六IGBT管的射极与所述第六FRD管的阳极相连，并作为所述智能功率模块的W相低压参考端。
在一些实施例中，所述功率因数校正电路包括一高速IGBT管、一高功率FRD管、一小功率FRD管和第一低压驱动集成管；
所述第一低压驱动集成管包括输入端、输出端、电源端和接地端；
所述第一低压驱动集成管的输入端作为所述功率因数校正电路的输入端；所述第一低压驱动集成管的电源端作为所述功率因数校正电路的电源端，所述第一低压驱动集成管的接地端作为所述功率因数校正电路的接地端；
所述第一低压驱动集成管的输入端与所述高速IGBT管的栅极相连，所述高速IGBT管的射极与所述小功率FRD管的阳极相连，所述高速IGBT管的集电极与所述小功率FRD管的阴极、所述高功率FRD管的阳极相连。
根据本发明实施例的智能功率模块的制造方法，所述智能功率模块为如上所述的智能功率模块，所述制造方法包括以下步骤：
S10：制作散热器，并在所述散热器的下表面形成散热皱褶，在所述散热器的上表面上覆盖绝缘层；
S20：在所述绝缘层表面布设电路布线；
S30：在所述电路布线相应位置配设电路元件以及引脚；
S40：利用所述金属线连接所述电路布线和电路元件；
S50：在所述绝缘层的表面包覆密封层，将所述电路布线、电路元件以及金属线覆盖；
S60：在所述散热器的下表面上设置防水处理层；
S70：对所述智能功率模块进行模块功能测试，所述模块功能测试包括绝缘耐压、静态功耗和延迟时间测试。
在一些实施例中，在步骤S10中，还包括以下子步骤：
S11：根据设定的电路布局选取预定尺寸的湿式碳素复合材料形成纸质散热器；
S12：在所述电路布线之间的指定位置形成贯通孔，所述贯通孔贯穿所述绝缘层及所述散热器；
S13：在散热器的正面，使用绝缘材料和铜材，通过热压的方式，使绝缘材料形成于所述散热器的表面并作为所述绝缘层，使铜材形成于所述绝缘层的表面作为铜箔层；
S14：将所述铜箔层的特定位置腐蚀掉，剩余部分形成电路布线及焊垫；
S15：使用湿式碳素复合材料形成皱褶，通过耐高温胶水粘接于所述散热器的背面。
在一些实施例中，在步骤S50中，还包括以下子步骤：
S51：在所述绝缘层的表面周围设置热硬性树脂框；
S52：在所述热硬性树脂框的范围内以及所述贯通孔内注入热塑性树脂以密封所述电路布线、电路元件以及金属线；
S53：进行所述引脚的切筋成型和通过密封树脂将所述散热器的背面未覆盖皱褶的位置密封。
在一些实施例中，在步骤S30中，在所述电路布线相应位置配设电路元件前预先制成引脚且包括如下子步骤：
S31：选取铜基材，对铜基材通过冲压或蚀刻的方式，制成一排引脚，引脚之间通过加强筋连接；
S32：在所述引脚表面依次形成镍层和镍锡合金层，得到带镀层的引脚；
在步骤S40中，还包括以下子步骤：
S41：通过回流焊焊接所述电路元件于所述电路布线上；
S42：清除残留在所述绝缘层的助焊剂；
S43：利用所述金属线连接所述电路布线和电路元件。
在一些实施例中，所述散热器为纸质散热器，在所述散热器的正面覆盖绝缘层，在绝缘层表面形成电路布线和焊垫的步骤包括：
S’10：根据设定的电路布局选取预定尺寸的湿式碳素复合材料形成纸质散热器；
S’20：在散热器的正面，使用绝缘材料和铜材，通过热压的方式，使绝缘材料形成于所述散热器的表面并作为所述绝缘层，使铜材形成于所述绝缘层的表面作为铜箔层；
S’30：将所述铜箔层的特定位置腐蚀掉，剩余部分形成电路布线及焊垫；
S’40：在所述散热器的背面形成隔断部，将预先制成的散热皱褶固定在所述散热器的背面对应于所述功率元件的位置的步骤包括S’41：通过切割、撕裂、腐蚀等方式，将所述纸质散热器的背面的特定位置的材料去除，形成隔断部。
S’50：使用湿式碳素复合材料形成皱褶，通过耐高温胶水粘接于所述散热器的背面对应于功率元件的位置。
根据本发明实施例的智能功率模块的制造方法，所述智能功率模块为如上所述的智能功率模块，所述制造方法包括以下步骤：
T10：制造所述散热器和引脚，散热器的上表面形成为平面；
T20：在散热器的上表面上设置绝缘层，并在绝缘层的上表面上形成有电路布线；
T30：在电路布线上分别设置电路元件和与外部相连的引脚，在散热器的下表面上设置散热区域，在散热区域上设置散热褶皱；
T40：用金属线连接电路元件和电路布线；
T50：烘烤所述散热器并模制密封树脂，并对引脚进行成型，得到智能功率模块。
根据本发明实施例的智能功率模块的制造方法，所述智能功率模块为如上所述的智能功率模块，所述制造方法包括以下步骤：
P10：制造散热器和引脚，所述散热器的上表面形成为平面，在所述散热器的下表面上 设置散热褶皱；
P20：在所述散热器的上表面上设置绝缘层，并在所述绝缘层的上表面上设置电路布线；
P30：在所述电路布线上分别设置电路元件和与外部相连的所述引脚；
P40：用金属线连接所述电路元件和所述电路布线；
P50：烘烤所述散热器并模制密封树脂，对所述引脚进行成型，得到智能功率模块。
在一些实施例中，在所述步骤P30中，还包括对所述散热器进行清洗的步骤；
在所述步骤P50中，在无氧环境中烘烤所述散热器，烘烤时间大于2h，烘烤温度为110℃-140℃。
根据本发明实施例的智能功率模块的制造方法，包括：
Q10：形成散热器；
Q20：以所述散热器作为功率模块基材，在所述功率模块基材的一侧形成绝缘层；
Q30：在所述绝缘层上不与所述散热器接触的一侧形成焊接区和引脚；
Q40：在所述焊接区的功率焊接区装配至少一个功率器件；
Q50：形成密封层以完成所述智能功率模块的制作。
在一些实施例中，所述焊接区还包括非功率焊接区，在所述非功率焊接区装配至少一个非功率器件，
步骤Q10包括步骤Q11：利用湿式碳素复合层形成散热器；
步骤Q30包括步骤Q31：在所述散热器上不与所述绝缘层接触的一侧形成散热褶皱，所述散热褶皱对应于所述至少一个功率器件所在的区域；
步骤Q40包括：
Q41：在所述功率焊接区涂布第一锡膏层；
Q42：在所述功率焊接区装配所述至少一个功率器件后，对所述第一锡膏层进行回流焊处理以固化所述第一锡膏层；
Q43：在所述非功率焊接区涂布第二锡膏层；
Q44：在所述非功率焊接区装配所述至少一个非功率器件后，对所述锡膏层进行回流焊处理以固化所述第二锡膏层；
Q45：对所述散热器进行清洗处理，其中清洗处理包括喷淋处理和/或超声清洗处理。
在一些实施例中，步骤Q30包括：
Q’31：在所述绝缘层上不与所述散热层接触的一侧形成金属种子层，其中，所述金属种子层的厚度为0.01至0.1微米；
Q’32：对所述种子层进行电镀处理以形成电路布线，其中，所述电路布线的厚度为1至5微米；
Q’33：刻蚀处理所述电路布线以形成所述焊接区、所述引脚和焊垫；
Q’34：在所述焊接区、所述引脚和所述焊垫之间连接有金属线。
附图说明
图1为根据本发明实施例提供的智能功率模块的俯视图；
图1(a)根据本发明实施例提供的智能功率模块的仰视图；
图2是图1中沿X-X’线的剖面图；
图2(a)根据本发明实施例提供的智能功率模块的结构示意图；
图2(b)根据本发明实施例提供的智能功率模块的结构示意图；
图3是根据发明实施例的智能功率模块的制造方法中散热器的侧视工序示意图；
图4是根据本发明实施例智能功率模块的制造方法中散热器的俯视工序示意图；
图5为在散热器上形成绝缘层307、铜箔层18B的工序示意图；
图6为制作电路布线的工序示意图；
图6(a)是在散热器的正面形成绝缘层和铜箔层后、在铜箔层上形成电路布线的示意图；
图6(b)是根据本发明实施例智能功率模块的电路布线上形成贯通孔的示意图；
图6(c)是根据本发明实施例智能功率模块的去掉密封树脂后的示意图；
图7是图3中沿X-X’线的剖面图；
图8为制作散热皱褶的工序示意图；
图9为引脚的尺寸标示图；
图10为制作引脚的工序示意图；
图11为在电路布线上装配电路元件、引脚的侧视工序示意图；
图12为在电路布线上装配电路元件、引脚的俯视工序示意图；
图12(a)为在电路布线上装配电路元件、引脚的俯视工序示意图；
图13为装配金属线的侧视工序示意图；
图13(a)根据本发明实施例提供的智能功率模块的结构示意图；
图14为装配金属线的俯视工序示意图；
图15为智能功率模块的密封工序示意图；
图15(a)是根据本发明实施例的智能功率模块的结构示意图；
图15(aa)是根据本发明实施例的智能功率模块的结构示意图；
图15(b)是根据本发明实施例的智能功率模块的结构示意图；
图15(bb)是根据本发明实施例的智能功率模块的结构示意图；
图15(c)是根据本发明实施例的智能功率模块的结构示意图；
图15(cc)是根据本发明实施例的智能功率模块的结构示意图；
图15(d)是根据本发明实施例的智能功率模块的结构示意图；
图16是根据本发明实施例的智能功率模块的制造方法流程图；
图17是根据本发明实施例的智能功率模块的结构示意图；
图17(a)是根据本发明实施例的智能功率模块的结构示意图；
图17(b)是根据本发明实施例的智能功率模块的结构示意图；
图18是图17中沿线X-X’的截面图；
图18(a)是根据本发明实施例的智能功率模块的结构示意图；
图19是根据本发明实施例的智能功率模块的结构示意图；
图20是图19中沿线X-X’的截面图；
图21是根据本发明实施例的智能功率模块的俯视图，其中去掉了密封树脂；
图21(a)根据本发明实施例的智能功率模块的俯视图，其中去掉了密封树脂；
图22是根据本发明实施例的智能功率模块的制造方法的流程图；
图23是图4中的散热器增加散热区域的结构示意图；
图24是根据本发明实施例的智能功率模块的散热器上设置绝缘层和铜箔层的结构示意图；
图25是根据本发明实施例的智能功率模块的散热褶皱的结构示意图；
图26是根据本发明实施例的智能功率模块的装配散热褶皱后的结构示意图；
图27是根据本发明实施例的智能功率模块的多个引脚的结构示意图；
图28是根据本发明实施例的智能功率模块的引脚的结构示意图；
图28(a)是根据本发明实施例的智能功率模块的引脚的结构示意图，该引脚带有弧度；
图29是根据本发明实施例的智能功率模块的电路布线在装配完成后的结构示意图；
图30是图29中所示结构的俯视图；
图31是图29中所示结构进行连接工序后的结构示意图；
图32是图31中所示结构的俯视图；
图32(a)根据本发明实施例提供的智能功率模块的结构示意图；
图32(b)根据本发明实施例提供的智能功率模块的结构示意图；
图33是图31中所示结构添加密封树脂后的结构示意图；
图34是图33中所示结构进行引脚切断的结构示意图。
图35是根据本发明实施例的智能功率模块的结构示意图；
图36是图35中沿线X-X’的截面图；
图37是根据本发明实施例的智能功率模块的制造方法的流程图；
图38是根据本发明实施例的智能功率模块的装配散热褶皱后的结构示意图；
图39是根据本发明实施例的智能功率模块的电路布线在装配完成后的结构示意图；
图40是图39中所示结构进行连接工序后的结构示意图；
图41是图40中所示结构添加密封树脂后的结构示意图；
图42是图41中所示结构进行引脚切断的结构示意图；
图43是独立的框架结构的示意图；
图44是图43的X-X’线的截面图。
图45(A)是现有的智能功率模块的电路图；
图45(B)是现有的智能功率模块的俯视图；
图45(C)是图45(B)去除树脂后的示意图；
图45(D)是图45(B)的X-X’线的截面图；
图45(E)是现有的智能功率模块安装在铝散热器上的示意图；
图45(BB)是现有的智能功率模块的俯视图；
图45(CC)是图45(BB)去除树脂后的示意图；
图45(DD)是图45(BB)的X-X’线的截面图；
图45(EE)是现有的智能功率模块安装在铝散热器上的示意图；
图46(A)是本发明实施例的智能功能模块的电路图；
图46(B)是本发明实施例的智能功能模块的俯视图；
图46(C)是图46(B)的X-X’线的截面图；
图46(D)是本发明实施例智能功能模块去掉密封树脂后的正面俯视图；
图46(AA)是本发明智能功能模块较佳实施例的电路图；
图46(BB)是本发明智能功能模块较佳实施例的俯视图；
图46(CC)是图46(BB)的X-X’线的截面图；
图46(DD)是本发明实施例智能功能模块去掉密封树脂后的正面俯视图；
图47(A)是本发明实施例第一工序在纸质散热器正面形成绝缘层和铜箔层的俯视图；
图47(B)是图47(A)的侧视图；
图48(A)是本发明实施例第二工序中在所述电路布线的表面装配IGBT管、高压驱动集成管、低压驱动集成管和预先制成的引脚，在承托盘上安装FRD管的俯视图；
图48(B)是图48(A)的侧视图；
图48(AA)是本发明实施例第二工序中在电路布线上安装IGBT管、FRD管和引脚的俯视图；
图48(BB)是图48(AA)的侧视图；
图48(C)是本发明实施例第二工序中的承托盘的仰视图；
图48(D)是本发明实施例第二工序中的承托盘的正视图；
图49(A)是本发明实施例第三工序中在IGBT管的射极安装FRD管的俯视图；
图49(B)是图49(A)的侧视图；
图49(AA)是本发明实施例第三工序中在IGBT管的射极安装高压驱动集成管和低压驱动集成管的俯视图；
图49(BB)是图49(AA)的侧视图；
图50(A)是本发明实施例第四工序中，通过金属线将IGBT管、FRD管、高压驱动集成管、低压驱动集成管和电路布线连接形成电路的俯视图；
图50(B)是图50(A)的侧视图；
图50(AA)是本发明实施例第四工序中，通过金属线使功率元件、非功率元件、散热器和电路布线间形成连接的俯视图；
图50(BB)是图50(AA)的侧视图；
图51是本发明实施例第五工序中，使用模具由密封树脂密封纸质散热器的剖面图；
图51(A)是本发明实施例第五工序中使用模具由密封树脂密封纸质散热器的剖面图；
图52(A)是本发明实施例第六工序中，引脚切筋成型的示意图；
图52(B)是本发明实施例第六工序中，安装散热皱褶的示意图；
图53是本发明实施例智能功率模块制造方法的流程图。
图53(A)是本发明实施例智能功率模块制造方法的流程图。
图54是本发明实施例智能功率模块制造方法的流程图。
具体实施方式
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，旨在用于解释本发明，而不能理解为对本发明的限制。
下面结合附图1-图54详细描述根据本发明实施例的智能功率模块10。
如图1-图42所示，根据本发明实施例的智能功率模块10，包括：散热器306、绝缘层307、电路布线308、电路元件以及金属线305。
具体而言，散热器306的至少部分下表面上形成散热区域17B，散热区域17B上设有散热褶皱17A，绝缘层307设在散热器306的上表面上。电路布线308设在绝缘层307上，电路元件设在电路布线308上，电路元件通过金属线305与电路布线308连接。
根据本发明实施例的智能功率模块10，通过在散热器306下表面上设置散热褶皱17A，使电路元件的大部分热量被迅速散出，使智能功率模块10始终工作在低温环境中，从而提高了智能功率模块10的电性能和热稳定性。
结合图1和图2，根据本发明实施例的智能功率模块10具有引脚301、密封层12a、金属线305、散热器306、电路布线308、绝缘层307和电路元件，该电路元件包括功率元件19和非功率元件14a。散热器306为纸质散热器，散热器306的下表面形成大量散热皱褶17A，散热器306的上表面覆盖有绝缘层307。电路布线308配设在所述绝缘胶21的表面上，电路布线308包括设置在靠近所述散热器306的表面边缘的焊垫18A。金属线305用于根据电路原理图，在电路布线308之间、电路元件之间以及电路布线308和电路元件之间形成电路连接。密封层12a包括热硬性树脂框13a以及注入在热硬性树脂框13a的范围内的热塑性树脂形成。密封该电路且完全覆盖所述散热器306的上表面上的所有元素。
本实施例中，散热器306可耐受350℃以上高温的绝缘材料制作而成。如湿式碳素复合材料功能纸，可由粉末状和纤维状碳素材料复合加工成石墨质，并可根据需要折叠成任意形状，得到散热皱褶17A。为了提高抗腐蚀性和防水，表面可进行防水处理，即于散热器306的下表面覆盖防水层(图未示)。本实施例中，散热器306和散热皱褶17A一体制成，其中散热器306形状平整、所述散热皱褶17A形状不规则；散热器306和散热皱褶17A也可以为采用不同厚度的湿式碳素复合材料，本实施例使用了不同厚度的方式。其中，为了增加机械强度，散热器306采用了较厚的湿式碳素复合材料，厚度可设计为1.5mm，为了降低成本和增加皱褶的密度，散热皱褶17A采用了较薄的湿式碳素复合材料，厚度可设计为0.5mm。在此，散热器306具有散热皱褶17A的一面可以称为散热器306的背面(即下表面)，相对面可以称为散热器306的表面(上表面)。
实际应用中，散热皱褶17A不能完全覆盖散热器306的背面，在散热器306的背面的边缘需要流出至少2mm的平整位置，并且在散热器306的矩形短边有直径至少1mm的安装孔16a。
绝缘层307采用常规的绝缘材料为基础，可以加入二氧化硅、氮化硅、碳化硅等掺杂以提高导热性，在此，掺杂可以是球形或角形，通过热压方式，压合在散热器306的表面，并且使在散热器306的安装孔16a位置露出。
电路布线308由铜等金属构成，形成于绝缘层307上的相应位置(该位置根据电路原理图设计)，根据功率需要，可设计成0.035mm或0.07mm等的厚度，对于一般的智能功率模块，可以考虑设计成0.07mm，本实施例中采用0.07mm的厚度。另外，在绝缘层307的边缘，形成有由电路布线308构成的焊垫18A。在此，在绝缘层307的一边附近设置多个对准排列的焊垫18A，根据功能需要，也可在绝缘层307的多个边附近设置多个对准排列的焊垫18A。
功率元件19和非功率元件14a被固定在电路布线308上构成规定的电路。在此，功率元件19采用IGBT管、高压MOSFET管、高压FRD管等元件，功率元件19通过金属线305与电路布线308等连接；非功率元件14a采用集成电路、晶体管或二极管等有源元件、或者电容或电阻等无源元件，面朝上安装的有源元件等通过金属线305与电路布线308连接。
金属线305可以是铝线、金线或铜线，通过邦定使各功率元件19之间、各非功率元件14a之间、各电路布线308之间建立电连接关系，有时还用于使引脚301和电路布线308或功率元件19、非功率元件14a之间建立电连接关系。
引脚301被固定在设于电路散热器306其中一个或多个边缘的焊盘18A上，其具有例如与外部进行输入、输出的作用。在此，设计成一边上设有多条引脚301，引脚301和焊垫18A通过焊锡等导电电性粘结剂焊接，使得引脚301与所述焊垫18A连接并自散热器306向外延伸。引脚301一般采用铜等金属制成，铜表面通过化学镀和电镀形成一层镍锡合金层，合金层的厚度一般为5μm，镀层可保护铜不被腐蚀氧化，并可提高可焊接性。
考虑到，在变频空调等特定的应用场合，高导热绝缘层和增加散热器虽然可以解决智能功率模块的散热问题，但是，选用高导热绝缘层散热，一方面成本非常高，另一方面由于高导热绝缘层使用了大量的参杂而导致智能功率模块硬度很大，从而增加了智能功率模块的制造难度；如果在智能功率模块内部增加散热器，将功率元件贴装在散热器上，一方面会增加原材料成本，另一方面也增加了智能功率模块的工艺难度；如果在智能功率模块外部增加散热器，散热器贴装在智能功率模块的背面，由于与智能功率模块配合的应用电路上还有其他发热元件，如果为所有发热元件安装同一个散热器，会增加散热器面积，从而提高应用成本，如果为所有发热元件分别安装散热器，则会增加装配难度。因此选用高导热绝缘层和增加散热器均对智能功率模块的应用推广产生了困难，不利于智能功率模块在变频空调等民用场合的普及。
基于上述考虑，本发明实施例通过引入纸质散热器，在纸质散热器的背面形成隔断部 并在对应于功率元件的位置设置散热皱褶，在纸质散热器的正面形成绝缘层、电路布线、功率元件、非功率元件等元素，并完成有序加工，由于纸质散热器重量更轻，对加工时所用载具要求低，定位容易，从而可以降低制造成本，提高过程合格率；省去将功率元件贴装到内部散热器的工序，降低了设备投资费用；此外，由于在纸质散热器的背面设置散热皱褶，散热面积极大增加，并且不同功能的所述功率元件群因隔断部的存在极大减小了热串扰，各发热部分的发热虽互不相同但极少相互间传导而通过所述皱褶散失，在使用普通绝缘层的前提下，使智能功率模块及其应用平台的发热部件获得良好的散热效果，并且各发热源间热干扰很少，使得智能功率模块性能稳定，进而提高了智能功率模块的可靠性；除此之外，纸质散热器还便于运输。
在散热器306的背面设置有隔断部202a，隔断部202a是将散热器背面特定位置的散热材料去除形成，可以部分去除也可以全部去除露出绝缘层307，本实施例为了取得更好的散热效果，采用全部去除的方式。
在此，功率元件19的下方具有皱褶17A，具有所述隔断部202a的上方不具有功率元件19。所述散热皱褶17A位于所述功率元件19的背面被所述隔断部202a包围，并在所述纸质散热器306的背面的短边边缘的距离至少2mm，确保不对所述通孔16形成遮挡。
所述隔断部202a为所述纸质散热器306挖空形成的镂空，所述隔断部位于各功能电路的发热功率元件群之间，使热量不可能通过高导热的所述纸质散热器306进行传导，所述隔断部202a的宽度根据所述发热功率元件群之间的距离而定，一般来说，为了达到热隔断部效果，所述隔断部202a的宽度不应小于1mm，为了增加强度所述纸质散热器306的机械强度，所述隔断部202a的宽度不应大于5mm。此外所述隔断部202a可以完全将所述纸质散热器306去除，使所述绝缘层307露出，也可以仅去除所述纸质散热器306的绝大部分而保留与所述绝缘层307结合的极薄的一层。在一些实施例中，采用完全去除的方法。
桥堆、压缩机逆变的驱动部分、功率因素校正的驱动部分、风机逆变的驱动部分与其他控制部分(包括非功率元件14a等)间被隔断部202a隔离，不但使各发热部分的热干扰很低，绝大部分热量通过皱褶17A散失，并且使控制部分的温度保持在一个低的状态，避免了因为控制部分温飘引起的智能功率模块10性能下降。另外，所述隔断部202a的上方最好不设计有所述金属线305的邦定点。
如图43-图44所示，智能功率模块10还包括嵌套在所述智能功率模块10外围的框架结构13，所述框架结构13可以为热硬性树脂框且包括环绕在所述智能功率模块侧面的环形框和由所述环形框底部垂直向内侧延伸形成的与所述散热器底部接触的延伸部，所述延伸部的厚度为1mm～1.5mm。
热硬性树脂框13a通过传递模方式模制形成，热硬性树脂框13a外边缘大小与散热器306一致或比散热器306略小。应用中，热硬性树脂框13a内边缘与外边缘的距离不小于1.5mm，并且在热硬性树脂框13a矩形短边处，有直径与散热器306的通孔位置、直径一致的安装孔16a，以安装智能功率模块10。
密封层12a通过热塑性树脂注入模方式模制。在此，密封层12a完全位于热硬性树脂 框13a内并密封散热器306上表面上的所有元素。包覆于绝缘层307的表面，将电路布线308、电路元件以及金属线305覆盖。
由于智能功率模块10的背面具有散热皱褶17A，散热面积极大增加，绝缘层307无需使用高导热材料即可满足功率元件散热要求；散热结构为纸质材料，重量轻，智能功率模块10总体重量降低，便于长途运输和工人装配；因为模块本身具备散热器，所以在应用过程，外部无需再接散热器，降低应用难度和应用成本，提供装配品质。因此，本发明的智能功率模块10在降低成本同时，提高了可靠性，并且可设计成与现行智能功率模块功能及引脚定义兼容，便于智能功率模块的推广应用。
在该实施例中，为了便于散热，如图32(b)所示，在散热器306上还设有贯通孔22a，所述贯通孔22a贯穿所述散热器306和绝缘层307。
该贯通孔22a设置在散热器306的特定位置，具体地，使贯通孔22a位于构成发热源的器件和电路与不构成发热源的器件和电路之间，使得功率元件19各发热源间热干扰很少，而且功率元件19的大部分热量被迅速散出而不传导到非功率元件14a，使得智能功率模块10性能稳定，提高智能功率模块10的可靠性。
为了防止贯通孔22a加工误差，使电路布线308的边缘与所述贯通孔22a的边缘之间，以及，所述绝缘层307的边缘与所述贯通孔22a的边缘之间具有设定距离(后续详述)。
在此，所述桥堆、所述压缩机逆变的驱动部分、所述功率因素校正的驱动部分、所述风机逆变的驱动部分与其他控制部分间被所述贯通孔22a隔离。
此外，所述智能功率模块10还包括：配置在所述功率模块边缘、与所述电路布线308连接并向外延伸作为输入输出的引脚301。
在此，根据智能功率模块10内部电路布局及外围应用需要，所述引脚301可以配置于智能功率模块10的一个边缘、两个边缘、三个边缘或四个边缘。
在本实施例中，所述电路布线308、所述功率元件19和非功率元件14a、金属线305，以及所述引脚301与电路布线308的连接部分由密封树脂12封装；所述树脂12将所述贯通孔22a填充。
如图17(a)和图21(a)所示，电路单元1001实现桥堆功能、电路单元1002实现压缩机逆变功能、电路单元1003实现功率因素校正、电路单元1004实现风机逆变功能。
在此，所述桥堆、所述压缩机逆变的驱动部分、所述功率因素校正的驱动部分、所述风机逆变的驱动部分与其他控制部分间被所述贯通孔22a隔离。
所述贯通孔22a位于所述电路布线308之间，并且与所述绝缘层307和电路布线308有1mm以上的距离，所述贯通孔22a贯穿所述绝缘层307和所述纸质散热器306，在所述智能功率模块10被密封树脂12封装后，所述贯通孔22a被密封树脂12完全填充；所述贯通孔22a位于构成发热源的器件和电路，与不构成发热源的器件和电路之间，因为密封树脂12的导热性远低于纸质散热器306的导热性，因此可形成对各发热源间的热隔离、发热源与非发热源间的横向热隔离，并且，发热源的底部因具有皱褶17A，由此极大地增加了各发热源的纵向热传导效率，贯通孔22a使得智能功率模块10达到热隔离。
此外，为了增加热隔离效果，作为第一种设计方式，每个贯通孔22a的长度，可以设计为尽量长；作为第二种设计方式，为了提高纸质散热器306的硬度，贯通孔22a的长度可以设计为5mm～6mm，对于第二种设计方式，每个贯通孔22a间的距离可设计为0.5～1mm，为了提高热隔离效果，每个贯通孔22a的横向宽度，可设计为3mm～3.5mm，为了减小智能功率模块10的体积，每个贯通孔22a的横向宽度可设计为1mm～2.5mm。
金属线305还可以用于使引脚301和电路布线308或功率元件19、非功率元件14a之间建立电连接关系。对于功率元件19的连接，可采用300μm～400μm的铝线，对于非功率元件14a的电连接，可采用38μm～125μm的铝线，如果存在跨贯通孔22a的连接，优选采用250μm以上的铝线。
所述密封树脂12可通过传递模方式使用热硬性树脂12模制，也可使用注入模方式使用热塑性树脂12模制。在此，所述树脂12完全密封纸质散热器306表面上的所有元素，即只密封具有元素的一面，另一面完全露出。纸质散热器306上的贯通孔22a则被树脂12完全填充。
相比现有技术，本发明实施例的智能功率模块10具有如下有益效果：
1、由于本发明智能功率模块10的背面具有散热皱褶17A，散热面积极大增加，绝缘层307无需使用高导热材料即可满足功率元件19的散热要求。
2、智能功率模块10具有了桥堆、压缩机逆变功能，或者具有桥堆、压缩机逆变、风机逆变功能，使变频空调等应用领域的所有发热电路集中在一起同时散热。
3、如果散热皱褶17A位于功率元件19下方，使发热元件的大部分热量被迅速散出而不传导到非功率元件14a，使非功率元件14a始终工作在低温环境中，非功率元件14a的温飘极大减小，提高了智能功率模块10的电性能和热稳定性，由于所述纸质散热器306的背面除了配置皱褶17A的部分也被密封，本发明的智能功率模块10的水密性和气密性得到提高，提高复杂应用环境中的长期可靠性。
4、如果散热皱褶17A一体覆盖整个智能功率模块10背面，安装简便、结构简单，并可大量增加散热面积，使发热元件的热量可被快速散失，并且由于智能功率模块10的背面完全露出，提高了智能功率模块10的散热性。
5、桥堆、压缩机逆变的驱动部分、功率因素校正的驱动部分、风机逆变的驱动部分与其他控制部分(包括非功率元件14a等)间被贯通孔22a隔离，不但使各发热部分的热干扰很低，绝大部分热量通过皱褶17A散失，并且使控制部分的温度保持在一个低的状态，避免了因为控制部分温飘引起的智能功率模块10性能下降。
6、散热结构为纸质材料，重量轻，使得智能功率模块10总体重量降低，便于长途运输和工人装配；由于本发明智能功率模块10本身具备散热器306，因此在应用过程，外部无需再接散热器306，降低应用难度和应用成本，提高装配品质。
由上述可知，本发明的智能功率模块10在降低成本同时，提高了可靠性和性能，并且可设计成与现行智能功率模块10功能及引脚301定义兼容，便于智能功率模块10的推广应用。
如图16所示，本发明智能功率模块的制造方法包括以下步骤：
S10：制作作为散热器的纸质散热器，并在所述散热器的下表面形成散热皱褶，在所述散热器的上表面覆盖绝缘层；
S20：在所述绝缘层表面布设电路布线；
S30：在所述电路布线相应位置配设电路元件以及引脚；
S40：利用金属线连接所述电路布线和电路元件；
S50：在所述绝缘层的表面包覆密封层，将所述电路布线、电路元件以及金属线覆盖。
S60：在所述散热器的下表面上设置防水处理层；
S70：对所述智能功率模块进行模块功能测试，所述模块功能测试包括绝缘耐压、静态功耗和延迟时间测试。
在本发明的一些实施例中，在步骤S10中，还包括以下子步骤：
S11：根据设定的电路布局选取预定尺寸的湿式碳素复合材料形成纸质散热器；
S12：在所述电路布线之间的指定位置形成贯通孔，所述贯通孔贯穿所述绝缘层及所述散热器；
S13：在散热器的正面，使用绝缘材料和铜材，通过热压的方式，使绝缘材料形成于所述散热器的表面并作为所述绝缘层，使铜材形成于所述绝缘层的表面作为铜箔层；
S14：将所述铜箔层的特定位置腐蚀掉，剩余部分形成电路布线及焊垫；
S15：使用湿式碳素复合材料形成皱褶，通过耐高温胶水粘接于所述散热器的背面。
在本发明的一些实施例中，在步骤S50中(即在所述绝缘层的表面包覆密封层的步骤)，还包括以下子步骤：
S51：在所述绝缘层的表面周围设置热硬性树脂框；
S52：在所述热硬性树脂框的范围内以及所述贯通孔内注入热塑性树脂以密封所述电路布线、电路元件以及金属线；
S53：进行所述引脚的切筋成型和通过密封树脂将所述散热器的背面未覆盖皱褶的位置密封。
在本发明的一些实施例中，智能功率模块的制造方法还包括步骤S60：在所述散热器的下表面上设置防水层。
在本发明的一些实施例中，在步骤S30中，在所述电路布线相应位置配设电路元件前预先制成引脚且包括如下子步骤：
S31：选取铜基材，对铜基材通过冲压或蚀刻的方式，制成一排引脚，引脚之间通过加强筋连接；
S32：在所述引脚表面依次形成镍层和镍锡合金层，得到带镀层的引脚。
在步骤S40中，还包括以下子步骤：
S41：通过回流焊焊接所述电路元件于所述电路布线成上；
S42：清除残留在所述绝缘层的助焊剂。
S43：智能功率模块的制造方法在纸质散热器上形成电路布线并完成有序加工，重量更 轻的散热器对加工时所用载具要求低，定位容易，降低了制造成本，提高了过程合格率；省去将功率元件贴装到内部散热器的工序，降低了设备投资费用。
在本发明的一些实施例中，所述散热器为纸质散热器，在所述散热器的正面覆盖绝缘层，在绝缘层表面形成电路布线和焊垫的步骤包括：
S’10：根据设定的电路布局选取预定尺寸的湿式碳素复合材料形成纸质散热器；
S’20：在散热器的正面，使用绝缘材料和铜材，通过热压的方式，使绝缘材料形成于所述散热器的表面并作为所述绝缘层，使铜材形成于所述绝缘层的表面作为铜箔层；
S’30：将所述铜箔层的特定位置腐蚀掉，剩余部分形成电路布线及焊垫；
S’40：在所述散热器的背面形成隔断部，将预先制成的散热皱褶固定在所述散热器的背面对应于所述功率元件的位置的步骤包括S’41：通过切割、撕裂、腐蚀等方式，将所述纸质散热器的背面的特定位置的材料去除，形成隔断部。
S’50：使用湿式碳素复合材料形成皱褶，通过耐高温胶水粘接于所述散热器的背面对应于功率元件的位置。
以下说明的各工序的详细情况。
第一工序：参考图3-图10以及图43-图44，其中，图3为散热器的俯视图，图4是图3中沿X-X’线的剖面图。
根据需要的电路布局设计大小合适的散热器306，对于一般的智能功率模块，一枚的大小可选取64mm×30mm，厚度为1.5mm，对两面进行如涂敷防水胶的防蚀、防水处理。
参考图5，使用具有角形或球形掺杂的绝缘材料和铜材，通过同时热压的方式，使绝缘材料形成于散热器306的表面并作为绝缘层307、铜材形成于绝缘层307表面作为铜箔层18B。在此，为了提高耐压特性，绝缘层307的厚度可以设计为110μm，为了提高散热特性，绝缘层307的厚度可以设计为70μm。在此，为了提高通流能力，铜箔层18B的厚度可以设计成0.07mm，为了降低成本，铜箔层18B的厚度可以设计成0.035mm或0.0175mm。
参考图6和7，将铜箔层18B的特定位置腐蚀掉，剩余部分为电路布线308及焊垫18A。
参考图8，使用厚度为0.5mm的湿式碳素复合材料形成不规则形状，作为散热皱褶17A。对两面进行如涂敷防水胶的防蚀、防水处理。
每个引脚301都是用铜基材，通过冲压或者蚀刻的方式，制成如图9所示，单独的引脚单元为长度C为25mm，宽度K为1.5mm，厚度H为1mm的长条状；在本实施例中，为便于装配，也在引脚单元其中一端压制出90°的弧度，如图10所示。
然后通过化学镀的方法形成镍层：通过镍盐和次亚磷酸钠混合溶液，并添加了适当的络合剂，在已形成特定形状的铜材表面形成镍层，在金属镍具有很强的钝化能力，能迅速生成一层极薄的钝化膜，能抵抗大气、碱和某些酸的腐蚀。镀镍结晶极细小，镍层厚度一般为0.1μm；
接着通过酸性硫酸盐工艺，在室温下将已形成形状和镍层的铜材浸在带有正锡离子的镀液中通电，在镍层表面形成镍锡合金层，合金层一般控制在5μm，合金层的形成极大提高了保护性和可焊性。
第二工序：在电路布线308表面装配功率元件19、非功率元件14a和在焊垫18A表面装配引脚301的工序。
首先，通过锡膏印刷机，使用钢网，对绝缘层307上的电路布线308的特定位置和焊垫18A进行锡膏涂装；在此，为了提高爬锡高度，可使用0.15mm厚度的钢网，为了降低功率器件19和非功率元件14a移位的风险，可使用0.12mm厚度的钢网。本实施例中，使用的功率元件19的高度为0.07mm，为最轻的元器件，所以钢网厚度选择0.12mm厚度的钢网。
然后，参照侧视图图11和俯视图图12，将散热器306放置在载具20上，进行功率元件19、非功率元件14a和引脚301的安装，功率元件19和非功率元件14a可直接放置在电路布线308的特定位置，而引脚301则一端要安放在焊盘18A上，另一端需要载具20上的固定装置20A进行固定，载具20和固定装置20A通过合成石等材料制成。在此，载具20需要进行底部镂空处理，使散热皱褶17A露出，散热器306背面边缘至少1mm的未被散热皱褶17A覆盖的位置与载具20接触起支撑作用。
然后，放于载具20上的散热器306通过回流焊，锡膏固化，功率元件19、非功率元件14a和引脚301被固定。
第三工序：首先将散热器306放入清洗机中进行清洗，将回流焊时残留的松香等助焊剂及冲压时残留的铝线等异物洗净，根据非功率元件14a在电路布线308的排布密度，清洗可通过喷淋或超声或两者结合的形式进行。
清洗时，通过机械臂夹持引脚301，将散热器306置于清洗槽中，并要注意不要让机械臂触碰散热器306，因为散热器306具有脆性并容易形变，如果机械臂夹持散热器306，在清洗时产生的震动，容易造成散热器306发生崩裂。
第四工序：根据通流能力需要，选择适当直径的铝线作为邦定线(金属线305)，对于用于信号控制的集成电路，也可考虑使用金线作为邦定线。在本实施例中，全部选择铝线，一般来说，对功率元件19的邦定使用350μm～400μm的铝线，对非功率元件14a的邦定使用38μm～200μm的铝线，对散热器306的邦定使用350μm～400μm的铝线。
此工序完成后的制品参看侧视图图13和俯视图图14。
第五工序：在绝缘层307上装配热硬性树脂框13a并灌封热塑性树脂的工序。
首先，通过绝缘红胶等非导电性热固性胶水在绝缘层307上贴附矩形短边上带有通孔的热硬性树脂框13a，并在无氧环境中对贴附热硬性树脂框13a的散热器306进行烘烤，烘烤时间不应小于2小时，烘烤温度和选择175℃，使热硬性树脂框13a被固定在绝缘层307上，参见图16，在此，热硬性树脂框13a的高度必须高于金属线305的高度。
然后，向热硬性树脂框13a内注入热塑性树脂，直到热硬性数值框13被填满。热塑性树脂的注入温度为150℃，冷却后，密封层12a将散热器306上的所有元素密封，只有引脚301部分露出。
第六工序：如图1、图2、以及图15(d)所示，形成安装孔16a、隔断部202a，并固定散热皱褶17A的工序。智能功率模块经由此工序作为制品完成。
参考图1，通过打孔器等方式，在热硬性树脂13的通孔处将绝缘层307和散热器306打穿，形成安装孔16a。安装孔16a用于智能功率模块10的装配。
通过切割、撕裂、腐蚀等方式，在所述纸质散热器306背面的特定位置进行处理，使特定位置的纸质散热材料被去除，形成所述隔断部202a，所述隔断部202a两侧为不同功能电路的发热功率元件群。纸质散热材料可以部分去除，也可以全部去除露出所述绝缘层307，本实施例为了取得更好的热隔离效果，采用全部去除方式，采用纸质散热材料全部在所述隔断部202a中去除的方式时，注意不要在所述绝缘层307上形成划伤。
参考图2，使用耐受温度在150℃以上的耐高温胶水，将散热皱褶17A粘附在散热器306的背面，在此，散热皱褶17A不能完全覆盖散热器306的背面，例如，所述散热皱褶17A位于所述功率元件19的背面被所述隔断部202a包围，在散热器306的背面的短边边缘的距离至少2mm，确保不对安装孔16a形成遮挡。
然后将模块放入测试设备中，进行常规的电参数测试，一般包括绝缘耐压、静态功耗、迟延时间等测试项目，测试合格者为成品。
利用上述工序，完成智能功率模块10的制作。
本发明提出的一种智能功率模块及其制造方法，在智能功率模块中引入作为载体的纸质散热器，并在纸质散热器的背面设置隔断部，散热器背面对应于功率元件的位置设置散热皱褶，散热面积极大增加，绝缘层无需使用高导热材料即可满足功率元件散热要求；而且功率元件的大部分热量被迅速散出而不传导到非功率元件，使非功率元件始终工作在低温环境中，非功率元件的温飘极大减小，并且不同功能的所述功率元件群因隔断部的存在极大地减小了热串扰，各发热部分的发热虽互不相同但极少相互间传导而通过所述皱褶散失，提高了智能功率模块的电性能和热稳定性；本发明采用重量更轻的纸质散热器，对加工时所用载具要求低，定位容易，降低了制造成本，提高了过程合格率；省去将功率元件贴装到内部散热器的工序，降低了设备投资费用。
下面结合附图1-图34详细描述根据本发明实施例的智能功率模块10。
参照图17、图18和图19所示，根据本发明实施例的智能功率模块10包括散热器306、绝缘层307，多个电路布线308、功率元件19、非功率元件14a、多个引脚301和密封树脂12。
具体而言，散热器306的上表面形成为平面，绝缘层307设在散热器306的上表面上。多个电路布线308间隔开设在绝缘层307上。功率元件19和非功率元件14a分别设在多个电路布线308上，功率元件19通过金属线305与电路布线308电连接，非功率元件14a通过金属线305与电路布线308电连接。
散热器306的下表面形成有与功率元件19位置对应的散热区域17B，散热区域17B设有散热褶皱17A。多个引脚301的一端与多个电路布线308相连，多个引脚301的另一端伸出智能功率模块10与外部其他部件相连。密封树脂12完全密封多个电路布线308,密封树脂12覆盖散热器306的上表面和散热区域17B之外的区域。
根据本发明实施例的智能功率模块10，通过在散热器306下表面的与功率元件19对应 的位置上设置散热褶皱17A，使功率元件19的大部分热量被迅速散出而不传导到非功率元件14a，使非功率元件14a始终工作在低温环境中，非功率元件14a的温飘极大减小，提高了智能功率模块10的电性能和热稳定性，由于散热器306的背面除了设置散热褶皱17A的部分也被密封树脂12密封，大大提高了水密性和气密性，从而提高智能功率模块10在复杂应用环境中的长期可靠性。
另外，根据本发明实施例的智能功率模块10，通过在绝缘层307的下方设置散热器306并在散热器306的下表面的散热区域17B设置散热褶皱17A，极大地增加了智能散热模块10的散热面积，使绝缘层307无需使用高导热材料即可满足功率元件的散热要求；同时，智能功率模块10在应用过程中，外部无需再接散热器，降低了应用难度和应用成本，提高了装配品质。该种结构在降低成本的同时提高了可靠性，并且可设计成与现行智能功率模块的功能及引脚兼容，便于智能功率模块10的推广应用。
散热器306的种类可形成为多种，例如，根据本发明的一些实施例，散热器306可由湿式碳素复合材料功能纸构成。实际制备时可由粉末和纤维状碳素材料复合加工成石墨质，材料可耐受350℃以上的高温并可根据需要折叠成任意形状，从而得到散热皱褶17A。由该种纸质材料构成的纸质散热器重量轻，智能功率模块10总体重量降低，便于长途运输和工人装配，降低了成本。
为了提高散热器306的抗腐蚀性和防水性能，散热器306的外表面可进行防水处理，使散热器306的表面可形成防水处理层。例如，散热器306的上表面和下表面上均可以设置防水处理层。
散热器306与散热褶皱17A可一体形成。其中，散热器306的形状平整、散热皱褶17A的形状不规则，以提高散热面积。散热褶皱的结构可形成为多种，例如，如图18所示，散热褶皱可以形成为多个纵截面为空心倒三角的结构。
可以理解的是，散热器306和与散热皱褶17A也可以采用其它材料制造形成，例如，散热器306和与散热皱褶17A可以采用湿式碳素复合材料制造，其中，散热器306和与散热皱褶17A的厚度(沿上下方向延伸的尺寸)不同。为了增加机械强度，散热器306采用了较厚的湿式碳素复合材料，厚度可在1.2mm-2.5mm之间变化，例如，厚度可设计为1.5-1.8mm；再如，厚度可设计为0.5mm。为了降低成本和增加皱褶的密度，散热皱褶17A采用了较薄的湿式碳素复合材料，厚度可在0.3mm-0.7mm之间变化，例如，厚度可设计为0.5mm。
为方便描述，在此，散热器306的具有散热皱褶17A的一面可称为散热器306的背面，相对面可称为散热器306的表面。散热皱褶17A在散热器306上的布置结构可以有多种，根据本发明的一些实施例，散热褶皱17A包括多个，多个散热褶皱17A之间间隔开设置。
具体地，如图17和图18所示，功率元件19为多个且间隔开设在散热器17的上表面上，则散热器306下表面上的散热区域17B也为多个，多个散热区域17B间隔开设置且每个散热区域17B上分别设有散热皱褶17A。由此，多个散热区域17B之间间隔开设置，可以在一定程度上减少材料用量，降低成本。
在本发明的另一些具体实施方式中，散热褶皱17A包括多个，多个散热褶皱17A之间连续设置且任意一个散热褶皱17A的外周缘与散热器的下表面的外周缘之间间隔的距离大于1mm。
如图19和图20所示，也就是说，功率元件19为多个且间隔开设在散热器17的上表面上，散热器306下表面上的散热区域17B则为一个，一个散热区域17B完全覆盖了多个功率元件19所处的位置，并且散热褶皱17A在散热器306下表面上的正投影面积小于散热器306A下表面的面积。
散热褶皱17A的外周缘与散热器306的下表面的外周缘之间所间隔的距离大于1mm，即散热皱褶17A并不能完全覆盖散热器306的背面，而是在散热器306的背面的边缘流出至少1mm的平整位置。由此，该结构可以有效提高智能功率模块10的水密性和气密性。
根据本发明的一个实施例，散热区域17B形成为突出于散热器306的下表面向下延伸的凸台，散热褶皱17A设在散热区域17B的下表面上。也就是说，散热器306的上表面为平面，散热器306在安装散热皱褶17A的部位的厚度略高于不安装散热皱褶17A的部位的厚度。由此，通过设置散热区域17B，将该区域与不安装散热皱褶17A的区域区别开来，可以更好地在散热器306的下表面上设置密封树脂12。
如图18或20所示，密封树脂12的下表面可与散热器306的背面平齐设置。由此，散热褶皱17A不会被密封树脂12密封，从而不会影响到散热褶皱17A的散热性能。密封树脂12可通过传递模方式使用热硬性树脂模制成，也可通过注入模方式使用热塑性树脂模制成。在此，密封树脂12完全密封纸质散热器306上表面上的所有元素。例如如图18所示，密封树脂12的下表面与散热区域17B的凸台的下端面平齐。
绝缘层307可以采用日东、日化、电化等厂家的绝缘材料。为了提高绝缘层307的导热性，绝缘层307可以为导热绝缘层，导热绝缘层内设有导热物质，导热物质可以为二氧化硅、氮化硅和碳化硅中的至少一种，二氧化硅、氮化硅和碳化硅可以为球形或角状。具体在制造时，可以在绝缘材料中可以加入二氧化硅、氮化硅、碳化硅等掺杂，并通过热压方式压合在散热器306的上表面。
电路布线308可以由铜等金属构成，形成于绝缘层307上的特定位置。根据功率需要，可设计成0.035mm或0.07mm等的尺寸的厚度。对于一般的智能功率模块10而言，可以考虑设计成0.07mm。在本发明的一个示例中，电路布线308采用了0.07mm的厚度。
另外，根据本发明的一些实施例，绝缘层307的至少一侧的边缘设有多个焊垫18A，多个焊垫18A分别与多个电路布线308一体形成。焊垫18A可以由电路布线308构成。如图21所示，在绝缘层307的一侧的边缘设置了多个对准排列的焊垫18A。根据功能需要，也可在绝缘层307的多个边缘处设置多个对准排列的焊垫18A。
功率元件19和非功率元件14a被固定在电路布线308上构成规定的电路。在本发明的一些实施例中，功率元件19可以采用IGBT管、高压MOSFET管、高压FRD管等元件，功率元件19通过金属线305与电路布线308等连接。非功率元件14a可以采用集成电路、晶体管或二极管等有源元件、或者电容或电阻等无源元件。面朝上安装的有源元件等通过 金属线305与电路布线308连接。
金属线305可以是铝线、金线或铜线等，通过邦定使各功率元件19之间、各非功率元件14a之间以及各电路布线308之间建立电连接关系，有时还用于使引脚301和电路布线308、引脚301和功率元件19或者引脚301和非功率元件14a之间建立电连接关系。
如图21所示，智能功率模块10的一侧设有多个引脚301，多个引脚301的一端分别与多个焊垫18A相连。也就是说，引脚301被固定在设于由绝缘层307和电路布线308等构成的电路基板的一个边缘的焊垫18A上，其具有例如与外部进行输入、输出的作用。其中，引脚301和焊盘18A可以通过焊锡等导电电性粘结剂焊接。引脚301可形成为金属件，引脚301的表面可以设有镍锡合金层。例如，引脚301可以采用铜等金属制成，铜表面通过化学镀和电镀形成一层镍锡合金层，合金层的厚度一般为5μm，镀层可保护铜不被腐蚀氧化，并可提高可焊接性。
下面结合附图22详细描述根据本发明实施例的智能功率模块的制造方法。
如图22所示，智能功率模块可以为如上所述智能功率模块，根据本发明实施例的智能功率模块的制造方法可以包括以下步骤：
T10：制造散热器和引脚，散热器的上表面形成为平面。
T20：在散热器的上表面上设置绝缘层，并在绝缘层的上表面上形成有电路布线。
T30：在电路布线上分别设置电路元件和与外部相连的引脚，在散热器的下表面上与功率元件对应的位置设置散热区域，在散热区域上设置散热褶皱。
T40：用金属线连接功率元件、非功率元件和电路布线。
T50：烘烤所述散热器并模制密封树脂，并对引脚进行成型，得到智能功率模块。
本发明实施例的智能功率模块的制造方法的有益效果是：在纸质散热器上形成电路布线并完成有序加工，重量更轻的散热器对加工时所用载具要求低，定位容易，降低了制造成本，提高了过程合格率，省去了将功率元件贴装到内部散热器的工序，降低了设备投资费用。
采用以上方法制造的智能功率模块可为根据本发明上述实施例的智能功率模块10。其中，散热器可以为湿式碳素复合材料功能纸质散热器。
在步骤T20中，设置所述绝缘层的步骤为在绝缘材料中掺杂球形或角状的二氧化硅、氮化硅和碳化硅中的至少一种，然后热压在散热器的上表面上。在绝缘层的上表面上设置多个电路布线的同时，也可以设置多个焊垫。
另外，在步骤T20中，可以在绝缘层的上表面上形成多个电路布线，在步骤T30中，在多个电路布线上分别设置电路元件，每个电路元件包括功率元件和非功率元件，散热区域与功率元件相对，在每个电路布线上设置与外部相连的引脚。
在所述步骤T30中，在电路布线上设置好引脚后还可进一步对所述散热器进行清洗。
在步骤T50中，散热器进行烘烤的条件为：在在无氧环境中，烘烤时间大于2h，烘烤温度为110-140℃。
根据本发明的一些实施例，智能功率模块制造方法还可以包括步骤T60：对智能功率 模块进行模块功能测试。其中，模块功能测试包括绝缘耐压、静态功耗和延迟时间测试。
以下结合附图进一步对采用上述制造方法制造根据本发明实施例的智能功率模块10的几个工序进行详细描述。
一、制造散热器和散热褶皱
具体而言，该工序为形成大小合适的湿式碳素复合材料形成纸质散热器306和散热皱褶17A的工序。
首先，参照图图2(a)、3和图4、图32(a)，根据需要的电路布局设计大小合适的纸质散热器306。对于一般的智能功率模块，一枚的大小可选取64mm×30mm，厚度为1.5mm。
然后通过耐受温度在300℃以上的耐高温胶水，在上述64mm×30mm矩形纸质散热体的一面装配厚度为0.5mm的同材料矩形。在本实施例中，该矩形可设计成40mm×25mm，作为散热区域17B，如图23所示。接着对两面进行如涂敷防水胶的防蚀、防水处理。
参考图24，使用具有角形或球形掺杂的绝缘材料和铜材，通过同时热压的方式，使绝缘材料形成于纸质散热器306的表面并作为绝缘层307、铜材形成于绝缘层307表面作为铜箔层18B。在此，为了提高耐压特性，绝缘层307的厚度可以设计为110μm。为了提高散热特性，绝缘层307的厚度可以设计为70μm。为了提高通流能力，铜箔层18B的厚度可以设计成0.07mm。为了降低成本，铜箔层18B的厚度可以设计成0.035mm或0.0175mm。
参考图6和沿图6的X-X’线的截面图7，将铜箔层18B的特定位置腐蚀掉，剩余部分为电路布线308及焊垫18A。
参考图25，使用厚度为0.5mm的湿式碳素复合材料形成不规则形状，作为散热皱褶17A。对两面进行如涂敷防水胶的防蚀、防水处理。
参考图26，使用耐受温度在300℃以上的耐高温胶水，将散热皱褶17A粘附在纸质散热器306的背面的散热区域17B，在此，散热皱褶17A不能完全覆盖纸质散热器306的背面，在纸质散热器306的背面的边缘需要流出至少1mm的平整位置。
二、制造引脚
该工序为制成独立的带镀层的引脚301的工序。
每个引脚301都是用铜基材，通过冲压或者蚀刻的方式，制成如图27所示的一排引脚301。在本实施例中，引脚301由12个单独的引脚单元通过加强筋11A连接。如图9所示，单独的引脚单元为长度C为25mm，宽度K为1.5mm，厚度H为1mm的长条状。为便于装配，也可以在引脚单元的一端压制出一定的弧度，如图28、图28(a)所示。
然后通过化学镀的方法形成镍层。具体为通过镍盐和次亚磷酸钠混合溶液，并添加了适当的络合剂，在已形成特定形状的铜材表面形成镍层。由于金属镍具有很强的钝化能力，能迅速生成一层极薄的钝化膜，能抵抗大气、碱和某些酸的腐蚀。镀镍结晶极细小，镍层厚度一般为0.1μm。
接着通过酸性硫酸盐工艺，在室温下将已形成形状和镍层的铜材浸在带有正锡离子的镀液中通电，在镍层表面形成镍锡合金层。合金层一般控制在5μm，合金层的形成极大提高了保护性和可焊性。
三、在电路布线上装配元器件
具体而言，该工序为在电路布线308表面装配功率元件19、非功率元件14a和在焊垫18A表面装配引脚301的工序。
首先，通过锡膏印刷机，使用钢网，对绝缘层307上的电路布线308的特定位置和焊垫18A进行锡膏涂装。为了提高爬锡高度，可使用0.15mm厚度的钢网。为了降低功率器件19和非功率元件14a移位的风险，可使用0.12mm厚度的钢网。本实施例中，使用的功率元件19的高度为0.07mm，为最轻的元器件，所以钢网厚度选择0.12mm厚度的钢网。
然后，参照侧视图图29和俯视图图30，进行功率元件19、非功率元件14a和引脚301的安装。功率元件19和非功率元件14a可直接放置在电路布线308的特定位置，而引脚301则一端要安放在焊盘18A上，另一端需要载具20进行固定，载具20通过合成石等材料制成。在此，载具20需要进行底部镂空处理，使散热皱褶17A露出，纸质散热器306背面边缘至少1mm的未被散热皱褶17A覆盖的位置与载具20接触起支撑作用。
然后，放于载具20上的绝缘层307通过回流焊，以及锡膏固化，非功率元件14a和引脚301被固定。在此，可选用溶解温度为280℃的锡膏。
四、清洗散热器
本工序是清洗纸质散热器306的工序。
首先将纸质散热器306放入清洗机中进行清洗，将回流焊时残留的松香等助焊剂及冲压时残留的铝线等异物洗净，根据非功率元件14a在电路布线308的排布密度，清洗可通过喷淋或超声或两者结合的形式进行。
清洗时，通过机械臂夹持引脚301，将纸质散热器306置于清洗槽中，并要注意不要让机械臂触碰纸质散热器306，因为纸质散热器306具有脆性并容易形变，如果机械臂夹持纸质散热器306，在清洗时产生的震动，容易造成纸质散热器306发生崩裂。
五、连接工序
参考图2(b)和图32(b)，本工序为使功率元件19、非功率元件14a、散热器13和电路布线308间形成连接的工序。
根据通流能力需要，选择适当直径的铝线作为邦定线，对于用于信号控制的集成电路，也可考虑使用金线作为邦定线。在本实施例中，全部选择铝线，一般来说，对功率元件19的邦定使用350μm-400μm的铝线，对非功率元件14a的邦定使用38μm-200μm的铝线，对散热器13的邦定使用350μm-400μm的铝线。
此工序完成后的制品参看侧视图图31和俯视图图32。
六、密封散热器
本工序是由密封树脂12密封纸质散热器306的工序。图33表示使用模具50由密封树脂12密封纸质散热器306的工序的剖面图。
首先，在无氧环境中对纸质散热器306进行烘烤，烘烤时间不应小于2小时，烘烤温度可选择125℃。
将配置好引脚301的纸质散热器306搬送到模型44及45。通过使引脚301的特定部分 与固定装置46接触，进行纸质散热器306的定位。使散热区域17B与膜腔底部相平，也可在模腔底部安装高度为1mm的顶针，来确保高度不被设置得过低。
合模时，在形成于模具50内部的模腔中放置纸质散热器306，然后由浇口53注入密封树脂12。进行密封的方法可采用使用热硬性树脂的传递模模制或使用热硬性树脂的注入模模制。而且，对应自浇口53注入的密封树脂12模腔内部的气体通过排气口54排放到外部。
在此，纸质散热器306的背面紧贴在下模45上。为了加强贴合，也可在上模增加顶针，但仍会有少量密封树脂12进入到纸质散热器306的背面和下模45之间，因此，在脱模后，需要进行激光蚀刻或者研磨，将残留在纸质散热器306背面的少量密封树脂12去除，使纸质散热器306的背面从密封树脂12露出，而纸质散热器306的背面以上的部分被密封树脂12密封。
七、引脚成型、模块功能测试
参照图34所示，本工序是进行引脚301切筋成型并进行模块功能测试的工序，智能功率模块10经由此工序作为制品完成。
在前工序即传递模模装工序使除引脚301以外的其他部分都被树脂12密封。本工序根据使用的长度和形状需要，例如，在虚线51的位置将外部引脚301切断，有时还会折弯成一定形状，便于后续装配。
然后将模块放入测试设备中，进行常规的电参数测试，一般包括绝缘耐压、静态功耗、迟延时间等测试项目，测试合格者为成品。利用上述工序，完成图17至图19所示的智能功率模块10。
由于根据本发明实施例的智能功率模块10的其他构成以及制造方法的其他操作步骤等对于本领域的普通技术人员来说是可知的，在此不再详细描述。
下面结合附图详细描述根据本发明实施例的智能功率模块10。
参照图35、图36和图21所示，根据本发明实施例的智能功率模块10包括散热器306、绝缘层307，多个电路布线308、功率元件19、非功率元件14a、多个引脚301和密封树脂12。
具体而言，散热器306的上表面形成为平面，散热器306的下表面设有散热褶皱17A。绝缘层307设在散热器306的上表面上。多个电路布线308间隔开设在绝缘层307上。功率元件19和非功率元件14a分别设在多个电路布线308上。功率元件19通过金属线305与电路布线308电连接，非功率元件14a通过金属线305与电路布线308电连接。多个引脚301的一端与多个电路布线308相连，多个引脚301的另一端伸出智能功率模块10与外部其他部件相连。密封树脂12完全密封多个电路布线308并覆盖散热器306的上表面。
根据本发明实施例的智能功率模块10，通过在绝缘层307的下方设置散热器306并在散热器306的下表面设置散热褶皱17A，极大地增加了智能散热模块10的散热面积，使绝缘层307无需使用高导热材料即可满足功率元件的散热要求；同时，智能功率模块10在应用过程中，外部无需再接散热器，降低了应用难度和应用成本，提高了装配品质。该种结构在降低成本的同时提高了可靠性，并且可设计成与现行智能功率模块的功能及引脚兼容， 便于智能功率模块10的推广应用。
散热器306的种类可形成为多种，例如，根据本发明的一些实施例，散热器306可由湿式碳素复合材料功能纸构成。实际制备时可由粉末和纤维状碳素材料复合加工成石墨质，材料可耐受350℃以上的高温并可根据需要折叠成任意形状，从而得到散热皱褶17A。由该种纸质材料构成的纸质散热器重量轻，智能功率模块10总体重量降低，便于长途运输和工人装配，降低了成本。
为方便描述，散热器306的具有散热皱褶17A的一面可称为散热器306的背面，相对面可称为散热器306的表面。根据本发明的一些实施例，散热褶皱17A在散热器306下表面上的正投影面积小于散热器306A下表面的面积。散热褶皱17A的外周缘与散热器306的下表面的外周缘之间所间隔的距离大于1mm。也就是说，散热皱褶17A并不能完全覆盖散热器306的背面，而是在散热器306的背面的边缘流出至少1mm的平整位置。
如图36所示，密封树脂12的下表面可与散热器306的背面平齐设置。由此，散热褶皱17A不会被密封树脂12密封，从而不会影响到散热褶皱17A的散热性能。密封树脂12可通过传递模方式使用热硬性树脂模制成，也可通过注入模方式使用热塑性树脂模制成。在此，树脂12完全密封纸质散热器306上表面上的所有元素。
下面结合附图详细描述根据本发明实施例的智能功率模块的制造方法。
如图37所示，根据本发明实施例的智能功率模块的制造方法可以包括以下步骤：
P10：制造散热器和引脚，散热器的上表面形成为平面，在散热器的下表面上设有散热褶皱。
P20：在散热器的上表面上设置绝缘层，并在绝缘层的上表面上设置电路布线。
P30：在电路布线上设置电路元件和与外部相连的引脚。
P40：用金属线连接电路元件和电路布线。
P50：烘烤所述散热器并模制密封树脂，并对引脚进行成型，得到智能功率模块。
本发明实施例的智能功率模块的制造方法的有益效果是：在纸质散热器上形成电路布线并完成有序加工，重量更轻的散热器对加工时所用载具要求低，定位容易，降低了制造成本，提高了过程合格率，省去了将功率元件贴装到内部散热器的工序，降低了设备投资费用。
采用以上方法制造的智能功率模块可为根据本发明上述实施例的智能功率模块10。其中，散热器可以为湿式碳素复合材料功能纸质散热器。
在步骤P20中，设置所述绝缘层的步骤为在绝缘材料中掺杂球形或角状的二氧化硅、氮化硅和碳化硅中的至少一种，然后热压在散热器的上表面上。在绝缘层的上表面上设置多个电路布线的同时，也可以设置多个焊垫。另外，在步骤P20中，可以在绝缘层的上表面上设置多个电路布线，每个电路布线上均设置有电路元件，每个电路元件包括功率元件和非功率元件，散热区域与功率元件相对，在每个电路布线上设置与外部相连的引脚。
在所述步骤P30中，在电路布线上设置好引脚后还可进一步对所述散热器进行清洗。
在步骤P50中，散热器进行烘烤的条件为：在在无氧环境中，烘烤时间大于2h，烘烤 温度为110-140℃。
根据本发明的一些实施例，智能功率模块制造方法还可以包括步骤P60：对智能功率模块进行模块功能测试。其中，模块功能测试包括绝缘耐压、静态功耗和延迟时间测试。
由于该实施例中的智能功率模块10的制造工序可以与上述实施例中的智能功率模块10的制造工序相同，在此不再详细描述。
下面结合附图详细描述根据本发明实施例的智能功率模块的制造方法。
根据本发明的一个实施例的功率模块的制作方法，包括：
Q10：形成散热器；
Q20：以所述散热器作为功率模块基材，在所述功率模块基材的一侧形成绝缘层；
Q30：在所述绝缘层上不与所述散热器接触的一侧形成焊接区和引脚；
Q40：在所述焊接区的功率焊接区装配至少一个功率器件；
Q50：形成密封层以完成所述智能功率模块的制作。
根据本发明的实施例的功率模块的制作方法，通过形成散热器，有效增大了功率模块的导热面积和导热效率，降低了功率器件因散热不佳导致的烧损或失效等问题，进而提高了功率模块的可靠性，降低了功率模块的故障率，另外，通过将多个功率模块集中设置于同一区域，对上述同一区域进行散热器的集中制备，不会增加制作复杂度，同时，避免了多个功率模块将工况热量传递于非功率模块。
另外，根据本发明的上述实施例的功率模块的制作方法，还可以具有如下附加的技术特征：
所述焊接区还包括非功率焊接区，在所述非功率焊接区装配至少一个非功率器件。
步骤Q10包括步骤Q11：利用湿式碳素复合层形成散热器。
步骤Q30包括步骤Q31：在所述散热器上不与所述绝缘层接触的一侧形成散热褶皱，所述散热褶皱对应于所述至少一个功率器件所在的区域。
根据本发明的实施例的功率模块的制作方法，通过湿式碳素复合层形成散热器以及形成散热褶皱，有效增大了功率模块的散热面积和散热效率，同时，由于湿式碳素复合层具备极高地机械强度，可以有效减小散热器的厚度，进而减小了功率模块的体积。
根据本发明的一个实施例，步骤Q40包括：
Q41：在所述功率焊接区涂布第一锡膏层；
Q42：在所述功率焊接区装配所述至少一个功率器件后，对所述第一锡膏层进行回流焊处理以固化所述第一锡膏层；
Q43：在所述非功率焊接区涂布第二锡膏层；
Q44：在所述非功率焊接区装配所述至少一个非功率器件后，对所述锡膏层进行回流焊处理以固化所述第二锡膏层；
Q45：对所述散热器进行清洗处理，其中清洗处理包括喷淋处理和/或超声清洗处理。
根据本发明的实施例的功率模块的制作方法，通过第一锡膏层将功率模块准确地焊接于功率焊接区，以及在拆卸误安装或者损坏的功率模块时，可以通过快速加热第一锡膏层 实现功率模块的拆卸。
根据本发明的实施例的功率模块的制作方法，通过第二锡膏层将非功率模块准确地焊接于非功率焊接区，以及在拆卸误安装或者损坏的非功率模块时，同样地，可以通过快速加热第二锡膏层实现功率模块的拆卸，另外，通过增加清洗处理步骤，有效清除了组焊剂等表面杂质，增强了后续材料的粘附性以及降低了因表面杂质导致的应力问题。
根据本发明的一个实施例，在所述功率模块基材的一侧形成绝缘层，包括以下具体步骤：在所述功率模块基材的一侧形成导热绝缘层，所述导热绝缘层包括二氧化硅层、氮化硅层以及碳化硅层中的一种或多种导热绝缘基层；对所述导热绝缘层进行热压处理以形成所述绝缘层。
根据本发明的实施例的功率模块的制作方法，通过增加导热绝缘基层构成的绝缘层，有效避免了功率模块之间的短路现象，另外，导热绝缘基层中包括大量无机成分，进一步地提高了功率模块的导热效率。
根据本发明的一个实施例，步骤Q30包括：
Q’31：在所述绝缘层上不与所述散热层接触的一侧形成金属种子层，其中，所述金属种子层的厚度为0.01至0.1微米；
Q’32：对所述种子层进行电镀处理以形成电路布线，其中，所述电路布线的厚度为1至5微米；
Q’33：刻蚀处理所述电路布线以形成所述焊接区、所述引脚和焊垫；
Q’34：在所述焊接区、所述引脚和所述焊垫之间连接有金属线。
根据本发明的一个实施例，在所述绝缘层上不与所述散热器接触的一侧形成焊接区和引脚，包括以下具体步骤：在所述绝缘层上不与所述散热器接触的一侧形成电路布线；刻蚀处理所述电路布线以形成所述焊接区、所述引脚和焊垫；在所述焊接区、所述引脚和所述焊垫之间形成金属线。
根据本发明的一个实施例，在所述绝缘层上不与所述散热器接触的一侧形成电路布线，包括以下具体步骤：在所述绝缘层上不与所述散热器接触的一侧形成金属种子层，其中，所述金属种子层的厚度为0.01至0.1微米；对所述种子层进行电镀处理以形成所述电路布线，其中，所述电路布线的厚度为1至5微米。
根据本发明的一个实施例，形成密封层以完成所述功率模块的制作，包括以下具体步骤：将热塑性树脂进行注入模模制处理形成密封层以完成所述功率模块的制作，其中，所述注入模模制处理的区域为所述功率模块上除皱褶区以外的区域。
根据本发明的一个实施例，形成密封层以完成所述功率模块的制作，包括以下具体步骤：将热硬性树脂进行传递模模制处理形成密封层以完成所述功率模块的制作，其中，所述传递模模制处理的区域为所述功率模块上除皱褶区以外的区域。
根据本发明的实施例的功率模块的制作过程包括：
(1)形成散热器306和散热褶皱17A的步骤，包括：
根据需要的电路布局设计大小合适的散热器306，对于一般的智能功率模块，一枚的大 小可选取64mm×30mm，厚度为1.5mm，然后通过耐受温度在300℃以上的耐高温胶水，在上述64mm×30mm矩形纸质散热体的一面装配厚度为0.5mm的同材料矩形；
使用具有角形或球形掺杂的绝缘材料和铜材，通过同时热压的方式，使绝缘材料形成于所述散热器306的表面并作为所述绝缘层307、铜材形成于所述绝缘层307表面作为电路布线308。在此，为了提高耐压特性，所述绝缘层307的厚度可以设计为110μm，为了提高散热特性，所述绝缘层307的厚度可以设计为70μm。在此，为了提高通流能力，所述电路布线308的厚度可以设计0.07mm，为了降低成本，所述电路布线308的厚度可以设计成0.035mm或0.0175mm；
将电路布线308的特定位置腐蚀掉，剩余部分为金属线305及焊垫18A，使用厚度为0.5mm的湿式碳素复合材料形成不规则形状，作为散热褶皱17A。对两面进行如涂敷防水胶的防蚀、防水处理；使用耐受温度在300℃以上的耐高温胶水，将所述散热褶皱17A粘附在所述散热器306的背面。
(2)形成引脚301的步骤，包括：
每个引脚301都是用铜基材，通过冲压或者蚀刻的方式，引脚301由12个单独的引脚单元通过加强筋连接；单独的引脚单元为长度C为25mm，宽度K为1.5mm，厚度H为1mm的长条状；有时，为便于装配，也在引脚单元其中一端压制出一定的弧度；然后通过化学镀的方法形成镍层：通过镍盐和次亚磷酸钠混合溶液，并添加了适当的络合剂，在已形成特定形状的铜材表面形成镍层，在金属镍具有很强的钝化能力，能迅速生成一层极薄的钝化膜，能抵抗大气、碱和某些酸的腐蚀。镀镍结晶极细小，镍层厚度一般为0.1μm；接着通过酸性硫酸盐工艺，在室温下将已形成形状和镍层的铜材浸在带有正锡离子的镀液中通电，在镍层表面形成形成镍锡合金层，合金层一般控制在5μm，合金层的形成极大提高了保护性和可焊性。
(3)形成功率元件19、非功率元件14a、电路布线308和焊垫18A的步骤，包括：
首先，通过锡膏印刷机，使用钢网，对所述绝缘层307上的所述金属线305的特定位置和所述焊垫18A进行锡膏涂装；在此，为了提高爬锡高度，可使用0.15mm厚度的钢网，为了降低功率元件19和非功率元件14a移位的风险，可使用0.12mm厚度的钢网。本实施例中，使用的所述功率元件19的高度为0.07mm，为最轻的元器件，所以钢网厚度选择0.12mm厚度的钢网。
进行所述功率元件19、非功率元件14a和引脚301的安装，所述功率元件19和所述非功率元件14a可直接放置在所述金属线305的特定位置，而引脚301则一端要安放在所述焊垫18A上，另一端需要载具进行固定，所述载具通过合成石等材料制成。在此，所述载具需要进行底部镂空处理，使所述散热褶皱17A露出，所述散热器306背面边缘至少1mm的未被所述散热褶皱17A覆盖的位置与所述载具接触起支撑作用。
然后，放于所述载具上的所述绝缘层307通过回流焊，锡膏固化，所述非功率元件14a和所述引脚301被固定。
在此，可选用溶解温度为280℃的锡膏。
(4)形成金属线305的步骤，包括：
首先将所述散热器306放入清洗机中进行清洗，将回流焊时残留的松香等助焊剂及冲压时残留的铝线等异物洗净，根据所述非功率元件14a在所述金属线305的排布密度，清洗可通过喷淋或超声或两者结合的形式进行。
清洗时，通过机械臂夹持所述引脚301，将所述散热器306置于清洗槽中，并要注意不要让机械臂触碰所述散热器306，因为所述散热器306具有脆性并容易形变，如果机械臂夹持所述散热器306，在清洗时产生的震动，容易造成所述散热器306发生崩裂。
(5)形成邦定线的步骤，包括：
根据通流能力需要，选择适当直径的铝线作为邦定线，对于用于信号控制的集成电路，也可考虑使用金线作为邦定线。在本实施例中，全部选择铝线，一般来说，对所述功率元件19的邦定使用350μm～400μm的铝线，对所述非功率元件14a的邦定使用38μm～200μm的铝线，对所述散热器13的邦定使用350μm～400μm的铝线。
所述功率模块包括：桥堆功能模块1001、压缩机逆变功能模块1002、功率因素校正模块1003以及风机逆变功能模块1004。
形成树脂密封层12a的步骤，包括：
首先，在无氧环境中对所述散热器306进行烘烤，烘烤时间不应小于2小时，烘烤温度和选择125℃。
将配置好引脚301的所述散热器306搬送到模型。通过使引脚301的特定部分与固定装置接触，进行所述散热器306的定位，使所述突台与膜腔底部相平，也可在模腔底部安装高度为1mm的顶针，来确保高度不被设置得过低。
合模时，在形成于模具内部的模腔中放置所述散热器306，然后由浇口注入密封树脂。进行密封的方法可采用使用热硬性树脂的传递模模制或使用热硬性树脂的注入模模制。而且，对应自浇口注入的密封树脂模腔内部的气体通过排气口排放到外部。
在此，所述散热器306的背面紧贴在下模上，为了加强贴合，也可在上模增加顶针，但仍会有少量所述密封树进入到所述散热器306的背面和下模之间，因此，在脱模后，需要进行激光蚀刻或者研磨，将残留在所述散热器306背面的少量密封树脂去除，使所述散热器306的背面从所述密封树脂露出，而所述散热器306的背面以上部分被密封树脂密封层12a。
(7)对引脚301进行后续处理的步骤，包括：
在前工序即传递模模装工序使除所述引脚301以外的其他部分都被所述树脂密封层12a。本工序根据使用的长度和形状需要，例如，在虚线的位置将外部引脚301切断，有时还会折弯成一定形状，便于后续装配。
然后将模块放入测试设备中，进行常规的电参数测试，一般包括绝缘耐压、静态功耗、迟延时间等测试项目，测试合格者为成品。
利用上述工序，完成功率模块的制作。
以上结合附图详细说明了本发明的技术方案，本发明提出了一种功率模块的制作方法， 通过形成散热器，有效增大了功率模块的导热面积和导热效率，降低了功率器件因散热不佳导致的烧损或失效等问题，进而提高了功率模块的可靠性，降低了功率模块的故障率，另外，通过将多个功率模块集中设置于同一区域，对上述同一区域进行散热器的集中制备，不会增加制作复杂度，同时，避免了多个功率模块将工况热量传递于非功率模块。
参照图46(A)、图46(AA)所示，为本发明实施例的智能功能模块实施例的电路图。
本发明提出的智能功能模块中的U相高压驱动集成管41、V相高压驱动集成管42、W相高压驱动集成管43是三枚用于驱动上桥臂IGBT管的单臂HVIC管，他们的结构完全相同，作用是将输入端HIN的0～5V的逻辑信号传到输出端HO，其中HO是VS～VS+15V的逻辑信号；由于VS的会在0～300V之间变化，所以所述U相高压驱动集成管41、所述V相高压驱动集成管42、所述W相高压驱动集成管43需要耐高压的流片工艺实现，有时为了降低成本，使用650V的BCD工艺，有时为了降低耐压结构设计难度，使用650V的SOI工艺。
本发明提出的智能功能模块中的U相低压驱动集成管44、V相低压驱动集成管45、W相低压驱动集成管46是三枚驱动下桥臂IGBT管的单臂LVIC管，他们的结构完全相同，作用是将输入端LIN的0～5V的逻辑信号传到输出端LO，其中LO是0～15V的逻辑信号；由于所述U相低压驱动集成管44、所述V相低压驱动集成管45、所述W相低压驱动集成管46不需要耐高压的流片工艺实现，有时为了降低成本，使用20V的Bipolar工艺，有时为了提高一致性，使用20V的BCD工艺。
本发明提出的智能功能模块中的第一低压驱动集成管47是驱动功率因数校正电路部分的高速IGBT管27的单臂LVIC，为了节省成本，使用20V的Bipolar工艺进行流片，出于降低功耗考虑，也可以采用20V的BCD工艺。
本发明提出的智能功能模块中的第一IGBT管、第二IGBT管、第三IGBT管、第四IGBT管、第五IGBT管、第六IGBT管、第一FRD管、第二FRD管、第三FRD管、第四FRD管、第五FRD管、第六FRD管分别对应图46(AA)中的IGBT管21、IGBT管22、IGBT管23、IGBT管24、IGBT管25、IGBT管26、FRD管11、、FRD管12、FRD管13、FRD管14、FRD管15、FRD管16。
所述U相高压驱动集成管41、所述U相低压驱动集成管44的VCC(即电源端)、所述V相高压驱动集成管42、所述V相低压驱动集成管45的VCC、所述W相高压驱动集成管43、所述W相低压驱动集成管44、所述PFC驱动集成管47的VCC相连，并作为所述智能功率模块10的VDD端，VDD是所述智能功率模块10的低压区供电电源，VDD一般为15V。
所述U相高压驱动集成管41的HIN端(即输入端)作为所述智能功率模块10的U相上桥臂输入端UHIN；所述V相高压驱动集成管42的HIN端作为所述智能功率模块10的V相上桥臂输入端VHIN；所述W相高压驱动集成管43的HIN端作为所述智能功率模块10的W相上桥臂输入端WHIN；所述U相低压驱动集成管44的LIN端(即输入端)作为所述智能功率模块10的U相下桥臂输入端ULIN；所述V相低压驱动集成管45的LIN端 作为所述智能功率模块10的V相下桥臂输入端VLIN；所述W相低压驱动集成管46的LIN端作为所述智能功率模块10的W相下桥臂输入端WLIN；所述第一低压驱动集成管47的PIN端作为所述智能功率模块10的功率因数校正电路(PFC电路)的输入端PFCIN。
所述智能功率模块10的U、V、W三相及PFC共七路输入接收0～5V的输入信号。
所述U相高压驱动集成管41的GND端(即接地端)、V相高压驱动集成管42的GND端、W相高压驱动集成管43的GND端、所述U相低压驱动集成管44的GND端、所述V相低压驱动集成管45的GND端、所述W相低压驱动集成管46的GND端、所述第一低压驱动集成管47的GND相连，并作为所述智能功率模块10的COM端，COM为VDD供电电源的负端。
所述U相高压驱动集成管41的VB端(即高压电源正端)作为所述智能功率模块10的U相高压区供电电源正端UVB；所述V相高压驱动集成管42的VB端作为所述智能功率模块10的V相高压区供电电源正端VVB；所述W相高压驱动集成管43的VB端作为所述智能功率模块10的W相高压区供电电源正端WVB；所述U相高压驱动集成管41的HO端(即输入端)与IGBT管21的栅极相连，所述U相高压驱动集成管41的VS端(即高压电源负端)与所述IGBT管21的射极、FRD管11的阳极、IGBT管24的集电极、FRD管14的阴极相连，并作为所述智能功率模块10的U相高压区供电电源负端UVS。
所述V相高压驱动集成管42的HO端与IGBT管22的栅极相连，所述V相高压驱动集成管42的VS端与所述IGBT管22的射极、FRD管12的阳极、IGBT管25的集电极、FRD管15的阴极相连，并作为所述智能功率模块10的V相高压区供电电源负端VVS。
所述W相高压驱动集成管43的HO端与IGBT管23的栅极相连，所述W相高压驱动集成管43的VS端与所述IGBT管23的射极、FRD管13的阳极、IGBT管26的集电极、FRD管16的阴极相连，并作为所述智能功率模块10的W相高压区供电电源负端WVS。
所述IGBT管21的集电极、所述FRD管11的阴极、所述IGBT管22的集电极、所述FRD管12的阴极、所述IGBT管23的集电极、所述FRD管13的阴极、高功率FRD管18的阴极相连，并作为所述智能功率模块10的高电压输入端P，P一般接300V。
所述U相低压驱动集成管44的LO端(即输出端)与IGBT管24的栅极相连，所述IGBT管24的射极与FRD管14的阳极相连，并作为所述智能功率模块10的U相低电压参考端UN。
所述V相低压驱动集成管45的LO端与IGBT管25的栅极相连，所述IGBT管25的射极与FRD管15的阳极相连，并作为所述智能功率模块10的V相低电压参考端VN。
所述W相低压驱动集成管46的LO端与IGBT管26的栅极相连，所述IGBT管26的射极与FRD管16的阳极相连，并作为所述智能功率模块10的W相低电压参考端WN。
所述第一低压驱动集成管47的POUT端与高速IGBT管27的栅极相连，所述高速IGBT管27的射极与小功率FRD管17的阳极相连，所述高速IGBT管27的集电极与所述小功率FRD管17的阴极、所述高功率FRD管18的阳极相连。此处的小功率FRD管17并不是必需的，在其他的实施例中可以不接入此部件。
参照图46(B)、图46(C)、图46(D)，图46(B)是本发明智能功能模块较佳实施例的俯视图，图46(C)是图46(B)的X-X’线的截面图，图46(D)是本发明实施例智能功能模块去掉密封树脂后的正面俯视图。
本发明的智能功率模块10具有在表面上形成有由绝缘层307的纸质散热器306，配置在所述绝缘层307上的电路布线308，配置在所述电路布线308上的所述IGBT管21、所述IGBT管22、所述IGBT管23、所述IGBT管24、所述IGBT管25、所述IGBT管26、所述高速IGBT管27，和所述HVIC管41、所述HVIC管42、所述HVIC管43、所述LVIC管44、所述LVIC管45、所述LVIC管46，配置在承托盘309上的和所述FRD管11、所述FRD管12、所述FRD管13、所述FRD管14、所述FRD管15、所述FRD管16、所述小功率FRD管17、所述高功率FRD管，配置在所述电路布线18的边缘部分的引脚301，其中：
所述散热器306的一面作为正面，另一面作为背面。
在散热器306的正面覆盖有绝缘层307，所述电路布线308设置在所述绝缘层307上远离散热器306的一面。
在所述散热器306的背面，设置有用于散热的皱褶320。
其中，所述散热器306和皱褶320均可以采用湿式碳素复合材料功能纸。
所述散热器306与所述皱褶320可以通过高温胶水粘接，或者也可以两者一体制成。
此外，所述智能功率模块10还包括：配置在所述电路布线308的边缘部分的引脚301，用于连使上述各元素间形成电连接的金属线305，和密封该电路且至少完全覆盖纸质散热器306上表面所述所有元素的密封树脂302。
此外，所述智能功率模块10还包括：用于连接所述电路布线308、所述IGBT管21、所述IGBT管22、所述IGBT管23、所述IGBT管24、所述IGBT管25、所述IGBT管26和所述FRD管11、所述FRD管12、所述FRD管13、所述FRD管14、所述FRD管15、所述FRD管16、所述FRD管17以构成相应电路的金属线305。
此外，所述智能功率模块10还包括：配置在所述功率模块边缘、与所述电路布线308连接并向外延伸作为输入输出的引脚301。
在此，根据智能功率模块10内部电路布局及外围应用需要，所述引脚301可以配置于智能功率模块10的一个边缘、两个边缘、三个边缘或四个边缘。
以下详细阐述本发明实施例智能功率模块10各构成要素：
纸质散热器306为湿式碳素复合材料功能纸，可由粉末和纤维状碳素材料复合加工成石墨质，材料可耐受350℃以上的高温并可根据需要折叠成任意形状，得到所述散热皱褶320。为了提高抗腐蚀性和防水，表面可进行防水处理；所述纸质散热器306和与所述散热皱褶320一体制成，其中所述纸质散热器306形状平整、所述散热皱褶320形状不规则；所述纸质散热器306和与所述散热皱褶320也可以为采用不同厚度的湿式碳素复合材料，本实施例使用了不同厚度的方式，其中，为了增加机械强度，所述纸质散热器306采用了较厚的湿式碳素复合材料，厚度可设计为1.5mm，为了降低成本和增加皱褶的密度，所述 散热皱褶320采用了较薄的湿式碳素复合材料，厚度可设计为0.5mm。在此，所述纸质散热器306的具有所述散热皱褶320的一面称为所述纸质散热器306的背面，相对面称为所述纸质散热器306的表面。在此，所述散热皱褶320不能完全覆盖所述纸质散热17的背面，在所述纸质散热器306的背面的边缘需要留出至少1.5mm的平整位置。
所述绝缘层307覆盖所述纸质散热器306一个表面，称为所述纸质散热器306的正面，形成，并在环氧树脂等树脂材料内高浓度填充氧化铝等填料提高热导率，也可以加入二氧化硅、氮化硅、碳化硅等掺杂以达到更高的导热性，在此，掺杂可以是球形或角形，通过热压方式，压合在所述纸质散热器306的表面。
所述电路布线308由铜等金属构成，形成于所述纸质散热器306上的特定位置，根据功率需要，可设计成0.035mm或0.07mm等的厚度，对于一般的智能功率模块，优先考虑设计成0.07mm，本实施例中采用0.07mm的厚度。特别地，在所述纸质散热器306的边缘，形成有用于配置所述引脚301的所述电路布线308。在此，在所述纸质散热器306的两边附近设置多个用于配置所述引脚301的所述电路布线308，根据功能需要，也可在所述纸质散热器306的一边、两边、三边、四边附近设置多个用于配置所述引脚301的所述电路布线308。
所述IGBT管21～27和FRD管11～18被固定在所述电路布线308上构成规定的电路。在此，所述7枚IGBT管的具有射极和栅极的面朝上、具有集电极的面朝下安装，所述FRD管的具有阳极的面朝上、具有阴极的面朝下安装。
所述HVIC管41被固定所述IGBT管21上，所述HVIC管42被固定所述IGBT管22上，所述HVIC管43被固定所述IGBT管23上，所述LVIC管44被固定所述IGBT管24上，所述LVIC管45被固定所述IGBT管25上，所述LVIC管46被固定所述IGBT管26上。在此，所述HVIC管和LVIC管在IGBT管上被固定的位置为IGBT管的射极，对于一般的30A的IGBT管，射极的面积不会小于6mm2，对于一般的单臂HVIC管和单臂LVIC管，面积不会大于2mm2。
所述承托盘309厚度设计为1mm，为了提高散热性，对于30A电流能力以上的智能功率模块，也可以设计为1.5～2mm，为了节省成本并进一步缩小体积，对于15A电流能力以下的智能功率模块，也可以设计为0.2～0.5mm；承托盘安309装FRD管的一面设有平坦部，承托盘309安装FRD管的一面在远离平坦部的边缘设有若干突起部310，突起部310的高度为所述FRD管厚度及所述IGBT管的厚度的和±1μm，为了提高通流能力，所述突起部310的数量可以为5个，为了简化工艺，所述突起部310的数量可以为2个，本实施例中设计为3个。
所述FRD管11～16的阴极被固定在所述承托盘309的正面的平坦部上，所述FRD管11～16具有阳极的面朝上；
所述FRD管11～16的阳极通过导电焊料，如银胶、锡膏等，分别与所述IGBT管21～26的射极连接，所述突起部310通过导电焊料，如银胶、锡膏等，分别与所述IGBT管21～26的集电极相连的电路布线308连接；在此，FRD管的电流能力一般设计为对应IGBT管的 一半以下，因此，FRD管的面积一般远小于IGBT管的面积，因此，FRD管的阳极完全与IGBT管的射极接触后，IGBT管的部分阳极及栅极会露出。
所述HVIC管41～46分别被固定在与所述IGBT管21～26非常接近的所述电路布线308上。
所述金属线305可以是铝线、金线或铜线，通过邦定使各电路元件和电路布线308之间建立电连接关系，有时还用于使所述引脚301和所述电路布线308建立电连接关系。
所述引脚301被固定在设于所述纸质散热器306边缘的所述电路布线308上，其具有例如与外部进行输入、输出的作用。在此，设计成相对两边上设有多条引脚301，引脚301和电路布线308通过焊锡等导电电性粘结剂焊接。所述引脚301一般采用铜等金属制成，铜表面通过化学镀和电镀形成一层镍锡合金层，合金层的厚度一般为5μm，镀层可保护铜不被腐蚀氧化，并可提高可焊接性。
所述树脂302可通过传递模方式使用热硬性树脂模制也可使用注入模方式使用热塑性树脂模制。
相比现有技术，本发明实施例的智能功率模块10具有如下有益效果：
1、智能功率模块的低压区驱动电路通过LVIC管实现，高压区驱动电路通过HVIC管实现，LVIC管可以通过低成本的BIPOLAR或COMS等低压工艺实现，HVIC管则通过BCD或SOI等高压工艺实现，前者的工艺成本仅为后者的1/3，降低了智能功率模块的制造成本。
2、本发明的智能功率模块由各自独立的HVIC管或LVIC管配置在对应IGBT管上，从HVIC管或LVIC管到IGBT管栅极的走线可以做到一致，从而可有效保证6枚IGBT管动态特性的一致性，一枚用于功率因素校正的IGBT的上升沿和下降沿可以做到非常陡，而且大量节省了电路布线的面积，从而减小了智能功率模块的电路基板的面积，使智能功率模块的成本进一步降低。
3、由于本发明的功率模块结构可以采用较小的电感和电容，而分布电感和电容的减小使本发明的智能功率模块的动态功耗大幅降低，而且本发明使用纸质散热器取代电路基板，使用散热皱褶取代铝散热器，使智能功率模块的重量降低，材料成本、运输成本也随之下降。
4、FRD管与IGBT管立体放置，增加接触面积，将功率元件间的走线长度降到最低，并节省了用于连接的金属线，还进一步大幅减小面积，再次使智能功率模块的成本降低。
由上述可知，本发明的智能功率模块10在降低成本的同时，减小了体积和重量，提高了散热效果。
此外，本发明一实施例还提出一种智能功率模块10制造方法，包括：
步骤S1，形成纸质散热器306，在所述散热器306的正面覆盖绝缘层307，在绝缘层307表面形成电路布线308；
具体地，根据设定的电路布局选取预定尺寸的湿式碳素复合材料形成纸质散热器306。
在散热器306的正面，使用绝缘材料和铜材，通过热压的方式，使绝缘材料形成于所 述散热器306的表面并作为所述绝缘层307，使铜材形成于所述绝缘层307的表面作为铜箔层。
之后，将铜箔层的特定位置腐蚀掉，剩余部分形成电路布线308。
步骤S2，在所述电路布线308的表面装配IGBT管21～27、FRD管11～18、HVIC管41～43、LVIC管44～46和预先制成的引脚301，在承托盘上安装FRD管11～16；
步骤S3，分别在所述IGBT管21～26的射极位置安装HVIC管41～43、LVIC44～47管、FRD管11～16；
步骤S4，通过金属线305将IGBT管21～27、FRD管11～18、HVIC管41～43、LVIC管44～47以及所述电路布线308连接形成相应的电路；
步骤S5，通过密封树脂302将所述散热器306的正面密封；
步骤S6，在所述散热器306的背面覆盖皱褶320；
具体地，使用湿式碳素复合材料形成皱褶320，通过耐高温胶水粘接于所述散热器306的背面。
进一步地，在步骤S2之前还可以包括：
步骤S7，制成独立的带镀层的引脚301。
具体地，首先，选取铜基材，对铜基材通过冲压或蚀刻的方式，制成一排引脚301，引脚301之间通过加强筋连接。
然后，在所述引脚301表面依次形成镍层和镍锡合金层，得到带镀层的引脚301。
进一步地，在上述步骤S6之后还包括：
步骤S8，进行所述引脚301的切筋成型，并进行模块功能测试。
以下参照附图对本实施例智能功率模块10的制造工序进行详细阐述：
本发明智能功率模块10的制造方法可以包括：在纸质散热器306表面上设置绝缘层307的工序；在绝缘层307的表面上形成电路布线308工序；在电路布线308配置IGBT管21～27和FRD管11～18的工序；在IGBT管上配置HVIC管41～43、LVIC管44～46和PFC驱动集成管47的工序；用金属线305连接各电路元件和所述电路布线306的工序；烘烤并模制的工序；对引脚301进行成型的工序；进行功能测试的工序。具体工序图如图53和图53(A)所示。
以下说明上述各工序的详细情况。
第一工序：参照图47(A)和图47(B)。
图47(A)是本发明实施例第一工序在纸质散热器的正面形成绝缘层和铜箔层的俯视图，图47(B)是图47(A)的侧视图。
本发明实施例第一工序是在大小合适的纸制散热器上形成绝缘层并在绝缘层表面形成电路布线的工序。
首先，参照俯视图47(A)和侧视图47(B)，根据需要的电路布局准备大小合适的纸质散热器306，对于一般的智能功率模块可选取44mm×20mm的大小，两面进行防蚀处理。在铝基板的至少一面的表面上设有绝缘层307。另外，在绝缘层的表面粘贴有作为导电图案 的铜箔。然后将该工序制造的铜箔进行蚀刻，局部地除去铜箔，形成电路布线308。
在此，大小合适的纸制散热器的形成可以通过直接对1m×1m的型材进行冲切等方式形成，也可通过先1m×1m的型材剪切形成。
第二工序：在一些实施例中，参照图48(AA)和图48(BB)。图48(AA)是本发明实施例第二工序中在电路布线上安装IGBT管、FRD管和引脚的俯视图，图48(BB)是图48(AA)的侧视图。
本发明的第二工序是在电路布线308上安装IGBT管21～27、FRD管11～18和引脚301的工序。
参照图48(AA)和图48(BB)，通过锡膏等焊料将IGBT管21～27、FRD管11～18和引脚301安装在电路布线308的规定位置。
在此，为了减小锡膏焊接后的空洞率，并且进行成本控制，可以考虑使用具有氮气保护的回流炉进行锡膏固定，如果成本允许，也可以考虑使用真空回流的形式。锡膏的融化温度一般为280℃左右。
每个引脚301都是用铜基材，通过冲压或者蚀刻的方式，制成引脚301，然后，通过化学镀的方法在引脚表面形成镍层，具体包括：
通过镍盐和次亚磷酸钠混合溶液，并添加了适当的络合剂，在已形成特定形状的铜材表面形成镍层，金属镍具有很强的钝化能力，能迅速生成一层极薄的钝化膜，能抵抗大气、碱和某些酸的腐蚀。镀镍结晶极细小，镍层厚度一般为0.1μm。
接着通过酸性硫酸盐工艺，在室温下将已形成形状和镍层的铜材浸在带有正锡离子的镀液中通电，在镍层表面形成形成镍锡合金层，合金层一般控制在5μm，合金层的形成极大提高了引脚的保护性和可焊性。
在另一些实施例中，参照图48(A)和图48(B)。图48(A)是本发明实施例第二工序中在所述电路布线的表面装配IGBT管、HVIC管、LVIC管和预先制成的引脚，在承托盘上安装FRD管的俯视图，图48(B)是图48(A)的侧视图，图48(C)是本发明实施例第二工序中的承托盘的仰视图，图48(D)是本发明实施例第二工序中的承托盘的正视图。
第二工序：是在电路布线308上安装IGBT管21～26、HVIC管41～43、LVIC管44～46和引脚301，在承托盘上安装FRD管11～16的工序。
参照图48(A)和图48(B)，通过锡膏等焊料将IGBT管21～26、HVIC管41～43、LVIC管44～46和引脚301安装在电路布线308的规定位置。通过锡丝等焊料将FRD管11～16安装在所述承托盘309的具有所述突起部310的一面的特定位置，因为所述FRD管11～16不会与散热器直接接触，所以为了降低洞率降低热积聚，使用共晶焊的方式进行焊接。
第三工序：在一些实施例中，参考图49(AA)和图49(BB)，图49(AA)是本发明实施例第三工序中在IGBT管的射极安装HVIC管和LVIC管的俯视图，图49(BB)是图49(AA)的侧视图。
本发明的第三工序是在IGBT管21～27的射极位置安装HVIC管41～43和LVIC管44～46 和PFC驱动集成管47的工序。
首先，参照图49(AA)和图49(BB)，在IGBT管21上安装HVIC管41，在IGBT管22上安装HVIC管42，在IGBT管23上安装HVIC管43，在IGBT管24上安装HVIC管44，在IGBT管25上安装HVIC管45，在IGBT管26上安装HVIC管46，在高速IGBT管27上安装PFC驱动集成管47。
在此，如果HVIC管和LVIC管的背面并非GND等电极，可以使用具有导电性的银胶等作为固定材料，如果如果HVIC管和LVIC管的背面为GND等电极，可以使用非导电性的红胶等作为固定材料。
其次，通过175℃烘烤的形式，将银胶或红胶固化，在此，银胶或红胶的固化温度为170℃左右，固化时间约为2小时。因为烘烤温度远低于锡膏的融化温度，所以在此加热过程中，不会影响到IGBT管、FRD管和引脚的焊接效果。
在另一些实施例中，参考图49(A)和图49(B)，图49(A)是本发明实施例第三工序中在IGBT管的射极安装FRD管的俯视图，图49(B)是图49(A)的侧视图。
本发明的第三工序是在IGBT管21～26的射极位置安装FRD管11～16的工序。
首先，参照图49(A)和图49(B)，在IGBT管11上安装FRD管11，在IGBT管22上安装FRD管12，在IGBT管23上安装FRD管13，在IGBT管24上安装FRD管14，在IGBT管25上安装FRD管15，在IGBT管26上安装FRD管16。
在此，为了更好地控制空洞率，可以使用具有导电性的银胶等作为固定材料，在所述IGBT管的射极的特定位置和与所述IGBT管的集电极相连的电路布线308的特定位置，点适当形状及厚度的银胶，再将所述FRD管的阳极配置在所述IGBT管的射极具有银胶的位置，将所述FRD管所在的承托盘309的突起部310配置在与所述IGBT管的集电极相连的电路布线308的具有银胶的位置。
第四工序：在一些实施例中，参照图50(AA)和图50(BB)，图50(AA)是本发明实施例第四工序中，通过金属线使功率元件、非功率元件、散热器和电路布线间形成连接的俯视图，图50(BB)是图50(AA)的侧视图。
本发明的第四工序是通过金属线305在电路元件和电路布线308间形成电连接的工序。
参照图50(AA)和图50(BB)，进行IGBT管21～27、FRD管11～18、HVIC管41～43、LVIC管44～46、PFC驱动集成管47和电路布线308的邦线连接。
在另一些实施例中，参照图50(A)和图50(B)，图50(A)是本发明实施例第四工序中，通过金属线将IGBT管、FRD管、HVIC管、LVIC管和电路布线连接形成电路的俯视图，图50(B)是图50(A)的侧视图。
本发明的第四工序是通过金属线305在电路元件和电路布线308间形成电连接的工序。
参照图50(A)和图50(B)，进行IGBT管21～26、FRD管11～16、HVIC管41～43、LVIC管44～46和电路布线308的邦线连接。
根据通流能力需要，选择适当直径的铝线作为邦定线，对于用于信号控制的部分，如HVIC管和LVIC管，也可考虑使用15μm的金线或38μm的铝线作为邦定线。对所述功 率部分，如IGBT管和FRD管，邦定使用200μm～400μm的铝线。
考虑到邦线机台震动对邦定线的影响，可选先邦粗线再邦细线的方式；出于防静电考虑，可选先邦细线再邦粗线的方式。具体根据机台震动幅度和机台邦头防静电效果而定。
第五工序：参照图51和图51(A)，为本发明实施例第五工序中，使用模具由密封树脂密封纸质散热器的剖面图。
本发明的第五工序是由密封树脂302密封纸质散热器306的工序。
将配置好引脚301的所述纸质散热器306搬送到模型44及45。通过使引脚301的特定部分与固定装置46接触，进行所述纸质散热器306的定位。
合模时，在形成于模具50内部的模腔中放置纸质散热器306，然后由浇口53注入密封树脂302。进行密封的方法可采用使用热硬性树脂的传递模模制或使用热硬性树脂的注入模模制。而且，对应自浇口53注入的密封树脂302模腔内部的气体通过排气口54排放到外部。对于所述浇口53位置的选择，应选择不完全具有引脚301的一边，即图50(A)的上边，对于排气口54的选择，应选择完全具有引脚301的一边，即图50(A)的下边。
在此，所述纸质散热器306的背面紧贴在下模45上，但仍会有少量所述密封树脂302进入到所述纸质散热器306的背面和下模45之间，因此，在脱模后，需要进行激光蚀刻或者研磨，将残留在所述纸质散热器306背面的少量密封树脂302去除，使所述纸质散热器306的背面从所述密封树脂302露出，并且平整，而所述纸质散热器306的背面以上部分被密封树脂302密封。
第六工序：参照图52(A)和图52(B)，图52(A)是本发明实施例第六工序中，引脚切筋成型的示意图，图52(B)是本发明实施例第六工序中，安装散热皱褶的示意图。
本发明的第六工序是进行所述引脚301切筋成型，装配散热皱褶并进行模块功能测试的工序，智能功率模块经由此工序作为制品完成。
在前工序即传递模模装工序使除所述引脚301以外的其他部分都被所述树脂302密封。本工序根据使用的长度和形状需要，例如，在虚线的位置将外部引脚301切断，如图52 (A)所示，有时还会折弯成一定形状，便于后续装配。
使用耐受温度在150℃以上的耐高温胶水，将所述散热皱褶320粘附在所述纸质散热器306的背面，在此，为了提高散热性，所述散热皱褶320可以完全覆盖所述纸质散热器306的背面从所述热硬性树脂框13a露出的部分，为了降低成本，所述散热皱褶320可以只完全覆盖上部具有所述功率元件19的所述纸质散热器306的背面。
然后将模块放入测试设备中，进行常规的电参数测试，一般包括绝缘耐压、静态功耗、迟延时间等测试项目，测试合格者为成品。
利用上述工序，完成图46所示的智能功率模块10。
本发明提出一种智能功率模块及其制造方法，功率元件中功率器件的FRD管与IGBT管通过承托盘实现立体放置，增加了接触面积，将功率元件间的走线长度降到最低，节省了用于连接的金属线，大幅减小电路布线的面积，使智能功率模块的成本降低。
本发明还提出一种智能功率模块的控制电路、智能功率模块及其制造方法，智能功率 模块的低压区驱动电路通过低压驱动集成管实现，高压区驱动电路通过高压驱动集成管实现，低压驱动集成管可以通过低成本的BIPOLAR或COMS等低压工艺实现，高压驱动集成管则通过BCD或SOI等高压工艺实现，前者的工艺成本仅为后者的1/3，大幅降低了智能功率模块的制造成本。
并且，本发明的智能功率模块由各自独立的高压驱动集成管或低压驱动集成管配置在对应IGBT管上，从高压驱动集成管或低压驱动集成管到IGBT管栅极的走线可以做到一致，从而可有效保证六枚IGBT管动态特性的一致性，并且一枚用于功率因素校正的IGBT的上升沿和下降沿可以做到非常陡，而且可大量节省电路布线的面积，从而使智能功率模块的电路基板的面积大幅减小，使智能功率模块的成本进一步降低。
另外，本发明的功率模块结构可以采用较小的电感和电容，而分布电感和电容的减小使本发明的智能功率模块的动态功耗大幅降低，而且由于本发明使用纸质散热器取代电路基板，使用散热皱褶取代铝散热器，使智能功率模块本身就具有良好的散热效果，外部无需再接散热器，并且散热器为纸质，大幅降低了智能功率模块的重量，材料成本、运输成本也随之大幅下降。
在本发明的描述中，需要理解的是，术语“中心”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本发明中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本发明中的具体含义。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
尽管上面已经示出和描述了本发明的实施例，可以理解的是，上述实施例是示例性的，不能理解为对本发明的限制，本领域的普通技术人员在本发明的范围内可以对上述实施例进行变化、修改、替换和变型。

Claims (27)

  1. 一种智能功率模块，其特征在于，包括：
    散热器，所述散热器的至少部分下表面为散热区域，所述散热区域上设有散热褶皱；
    绝缘层，所述绝缘层设在所述散热器的上表面上；
    电路布线，所述电路布线设在所述绝缘层上；
    电路元件，所述电路元件设在所述电路布线上并通过金属线与所述电路布线连接。
  2. 根据权利要求1所述的智能功率模块，其特征在于，所述散热器为具有湿式碳素复合材料功能纸质散热器或所述散热器为由可耐受350℃以上温度的绝缘材料制作而成的纸质散热器。
  3. 根据权利要求1或2所述的智能功率模块，其特征在于，所述散热褶皱为多个，多个所述散热褶皱间隔设置或多个所述散热褶皱连续设置。
  4. 根据权利要求1-3中任一项所述的智能功率模块，其特征在于，所述散热褶皱的外周缘与所述散热器的下表面的外周缘之间间隔的距离大于1mm。
  5. 根据权利要求1-4中任一项所述的智能功率模块，其特征在于，所述散热区域向下凸出形成凸台，所述散热褶皱设在所述凸台上。
  6. 根据权利要求1-5中任一项所述的智能功率模块，其特征在于，所述智能功率模块还包括嵌套在所述智能功率模块外围的框架结构，所述框架结构包括环绕在所述智能功率模块侧面的环形框和由所述环形框底部垂直向内侧延伸形成的与所述散热器底部接触的延伸部，所述延伸部的厚度为1mm～1.5mm。
  7. 根据权利要求1-6中任一项所述的智能功率模块，其特征在于，所述电路布线为间隔开的多个，
    所述智能功率模块还包括多个引脚，多个所述引脚的一端分别与多个所述电路布线相连，另一端与外部相连。
  8. 根据权利要求7所述的智能功率模块，其特征在于，所述绝缘层的至少一侧的边缘设有多个焊垫，多个所述引脚的另一端分别与多个所述焊垫连接。
  9. 根据权利要求1-8中任一项所述的智能功率模块，其特征在于，所述散热器在上下方向上的厚度为1.2mm-2.5mm，所述散热褶皱沿上下方向延伸的尺寸为0.3mm-0.7mm。
  10. 根据权利要求1-9中任一项所述的智能功率模块，其特征在于，所述智能功率模块还包括密封树脂，所述密封树脂完全密封所述电路布线和所述电路元件，所述密封树脂覆盖所述散热器的上表面和所述散热区域之外的区域。
  11. 根据权利要求1-10中任一项所述的智能功率模块，其特征在于，所述电路元件包括功率元件和非功率元件，所述功率元件和非功率元件均设在所述电路布线上，所述功率元件和非功率元件分别通过所述金属线与所述电路布线电连接，所述功率元件与所述散热区域相对，所述功率元件与所述非功率元件之间具有隔断部，所述隔断部设置在散热器的下表面上对应的位置处，所述隔断部的宽度为1mm～5mm。
  12. 根据权利要求11所述的智能功率模块，其特征在于，所述功率器件包括IGBT管 和与所述IGBT管连接的FRD管，所述FRD管底部设置有承托盘，所述FRD管倒扣在所述IGBT管的预定位置上且所述FRD管的顶部与所述IGBT管接触，所述承托盘通过所述电路布线与所述IGBT管相连。
  13. 根据权利要求12所述的智能功率模块，其特征在于，所述承托盘安装所述FRD管的一面设有平坦部，且所述承托盘安装所述FRD管的一面在远离所述平坦部的边缘设有若干用于连接所述电路布线的突起部。
  14. 根据权利要求12所述的智能功率模块，其特征在于，所述功率器件为六个，分别为三个上桥臂功率器件和三个下桥臂功率器件，所述功率元件还包括分别与所述三个上桥臂功率器件对应连接的U相高压驱动集成管、V相高压驱动集成管、W相高压驱动集成管，和分别与所述三个下桥臂功率器件对应连接的U相低压驱动集成管、V相低压驱动集成管、W相低压驱动集成管；
    所述智能功率模块还包括功率因数校正电路，所述功率因数校正电路具有桥堆、压缩机逆变以及功率因素校正功能或者具有桥堆、压缩机逆变、功率因素校正以及风机逆变功能，所述功率因数校正电路分别与所述U、V、W相高压驱动集成管和所述U、V、W三相低压驱动集成管相连。
  15. 根据权利要求14所述的智能功率模块，其特征在于，所述三个上桥臂功率器件分别为第一功率器件、第二功率器件、第三功率器件，所述三个下桥臂功率器件分别为第四功率器件、第五功率器件、第六功率器件；
    所述第一功率器件包括第一IGBT管和第一FRD管，所述第二功率器件包括第二IGBT管和第二FRD管，所述第三功率器件包括第三IGBT管和第三FRD管，所述第四功率器件包括第四IGBT管和与第四FRD管，所述第五功率器件包括第五IGBT管和第五FRD管，所述第六功率器件包括第六IGBT管和第六FRD管；
    所述U、V、W三相高压驱动集成管包括电源端、输入端、输出端、高压电源正端、高压电源负端和接地端，所述U、V、W三相低压驱动集成管包括电源端、输入端、输出端和接地端，其中：
    所述U、V、W三相高压驱动管的输入端分别作为所述智能功率模块的U、V、W三相上桥臂输入端；所述U、V、W三相低压驱动管的输入端分别作为所述智能功率模块的U、V、W三相下桥臂输入端；
    所述U、V、W三相高压驱动管和所述U、V、W三相低压驱动集成管的电源端相连并作为所述智能功率模块的低压区供电电源的正端，所述U、V、W三相高压驱动管和所述U、V、W三相低压驱动集成管的接地端相连作为所述智能功率模块的低压区供电电源的负端，所述U、V、W三相高压驱动管的高压电源正端分别作为所述智能功率模块的U、V、W三相高压区供电电源的正端；
    所述U相高压驱动集成管的输出端与所述第一IGBT管的栅极相连，所述U相高压驱动集成管的高压电源负端与所述第一IGBT管的射极、所述第一FRD管的阳极、所述第四IGBT管的集电极、所述第四FRD管的阴极相连，并作为所述智能功率模块的U相高压区 供电电源的负端；所述V相高压驱动集成管的输出端与所述第二IGBT管的栅极相连，所述V相高压驱动集成管的高压电源负端与所述第二IGBT管的射极、所述第二FRD管的阳极、所述第五IGBT管的集电极、所述第五FRD管的阴极相连，并作为所述智能功率模块的V相高压区供电电源的负端；所述W相高压驱动集成管的输出端与所述第三IGBT管的栅极相连，所述W相高压驱动集成管的高压电源负端与所述第三IGBT管的射极、所述第三FRD管的阳极、所述第六IGBT管的集电极、所述第六FRD管的阴极相连，并作为所述智能功率模块的W相高压区供电电源的负端；
    所述第一IGBT管的集电极、所述第一FRD管的阴极、所述第二IGBT管的集电极、所述第二FRD管的阴极、所述第三IGBT管的集电极、所述第三FRD管的阴极相连，并作为所述智能功率模块的高电压输入端；
    所述U相低压驱动集成管的输出端与第四IGBT管的栅极相连，所述第四IGBT管的射极与所述第四FRD管的阳极相连，并作为所述智能功率模块的U相低压参考端，所述V相低压驱动集成管的输出端与第五IGBT管的栅极相连，所述第五IGBT管的射极与所述第五FRD管的阳极相连，并作为所述智能功率模块的V相低压参考端，所述W相低压驱动集成管的输出端与第六IGBT管的栅极相连，所述第六IGBT管的射极与所述第六FRD管的阳极相连，并作为所述智能功率模块的W相低压参考端。
  16. 根据权利要求15所述的智能功率模块，其特征在于，所述功率因数校正电路包括一高速IGBT管、一高功率FRD管、一小功率FRD管和第一低压驱动集成管；
    所述第一低压驱动集成管包括输入端、输出端、电源端和接地端；
    所述第一低压驱动集成管的输入端作为所述功率因数校正电路的输入端；所述第一低压驱动集成管的电源端作为所述功率因数校正电路的电源端，所述第一低压驱动集成管的接地端作为所述功率因数校正电路的接地端；
    所述第一低压驱动集成管的输入端与所述高速IGBT管的栅极相连，所述高速IGBT管的射极与所述小功率FRD管的阳极相连，所述高速IGBT管的集电极与所述小功率FRD管的阴极、所述高功率FRD管的阳极相连。
  17. 一种智能功率模块的制造方法，其特征在于，所述智能功率模块为根据权利要求1-16中任一项所述的智能功率模块，所述制造方法包括以下步骤：
    S10：制作散热器，并在所述散热器的下表面形成散热皱褶，在所述散热器的上表面上覆盖绝缘层；
    S20：在所述绝缘层表面布设电路布线；
    S30：在所述电路布线相应位置配设电路元件以及引脚；
    S40：利用所述金属线连接所述电路布线和电路元件；
    S50：在所述绝缘层的表面包覆密封层，将所述电路布线、电路元件以及金属线覆盖；
    S60：在所述散热器的下表面上设置防水处理层；
    S70：对所述智能功率模块进行模块功能测试，所述模块功能测试包括绝缘耐压、静态功耗和延迟时间测试。
  18. 根据权利要求17所述的智能功率模块的制造方法，其特征在于，在步骤S10中，还包括以下子步骤：
    S11：根据设定的电路布局选取预定尺寸的湿式碳素复合材料形成纸质散热器；
    S12：在所述电路布线之间的指定位置形成贯通孔，所述贯通孔贯穿所述绝缘层及所述散热器；
    S13：在散热器的正面，使用绝缘材料和铜材，通过热压的方式，使绝缘材料形成于所述散热器的表面并作为所述绝缘层，使铜材形成于所述绝缘层的表面作为铜箔层；
    S14：将所述铜箔层的特定位置腐蚀掉，剩余部分形成电路布线及焊垫；
    S15：使用湿式碳素复合材料形成皱褶，通过耐高温胶水粘接于所述散热器的背面。
  19. 根据权利要求18所述的智能功率模块的制造方法，其特征在于，在步骤S50中，还包括以下子步骤：
    S51：在所述绝缘层的表面周围设置热硬性树脂框；
    S52：在所述热硬性树脂框的范围内以及所述贯通孔内注入热塑性树脂以密封所述电路布线、电路元件以及金属线；
    S53：进行所述引脚的切筋成型和通过密封树脂将所述散热器的背面未覆盖皱褶的位置密封。
  20. 根据权利要求17所述的智能功率模块的制造方法，其特征在于，
    在步骤S30中，在所述电路布线相应位置配设电路元件前预先制成引脚且包括如下子步骤：
    S31：选取铜基材，对铜基材通过冲压或蚀刻的方式，制成一排引脚，引脚之间通过加强筋连接；
    S32：在所述引脚表面依次形成镍层和镍锡合金层，得到带镀层的引脚；
    在步骤S40中，还包括以下子步骤：
    S41：通过回流焊焊接所述电路元件于所述电路布线上；
    S42：清除残留在所述绝缘层的助焊剂；
    S43：利用所述金属线连接所述电路布线和电路元件。
  21. 根据权利要求17所述的智能功率模块的制造方法，其特征在于，所述散热器为纸质散热器，在所述散热器的正面覆盖绝缘层、在绝缘层表面形成电路布线和焊垫的步骤中具体包括：
    S’10：根据设定的电路布局选取预定尺寸的湿式碳素复合材料形成纸质散热器；
    S’20：在散热器的正面，使用绝缘材料和铜材，通过热压的方式，使绝缘材料形成于所述散热器的表面并作为所述绝缘层，使铜材形成于所述绝缘层的表面作为铜箔层；
    S’30：将所述铜箔层的特定位置腐蚀掉，剩余部分形成电路布线及焊垫；
    S’40：在所述散热器的背面形成隔断部，将预先制成的散热皱褶固定在所述散热器的背面对应于所述功率元件的位置的步骤包括S’41：通过切割、撕裂、腐蚀等方式，将所述纸质散热器的背面的特定位置的材料去除，形成隔断部。
    S’50：使用湿式碳素复合材料形成皱褶，通过耐高温胶水粘接于所述散热器的背面对应于功率元件的位置。
  22. 一种智能功率模块的制造方法，其特征在于，所述智能功率模块为根据权利要求1-16中任一项所述的智能功率模块，所述制造方法包括以下步骤：
    T10：制造所述散热器和引脚，散热器的上表面形成为平面；
    T20：在散热器的上表面上设置绝缘层，并在绝缘层的上表面上形成有电路布线；
    T30：在电路布线上分别设置电路元件和与外部相连的引脚，在散热器的下表面上设置散热区域，在散热区域上设置散热褶皱；
    T40：用金属线连接电路元件和电路布线；
    T50：烘烤所述散热器并模制密封树脂，并对引脚进行成型，得到智能功率模块。
  23. 一种智能功率模块的制造方法，其特征在于，所述智能功率模块为根据权利要求1-16中任一项所述的智能功率模块，所述制造方法包括以下步骤：
    P10：制造散热器和引脚，所述散热器的上表面形成为平面，在所述散热器的下表面上设置散热褶皱；
    P20：在所述散热器的上表面上设置绝缘层，并在所述绝缘层的上表面上设置电路布线；
    P30：在所述电路布线上分别设置电路元件和与外部相连的所述引脚；
    P40：用金属线连接所述电路元件和所述电路布线；
    P50：烘烤所述散热器并模制密封树脂，对所述引脚进行成型，得到智能功率模块。
  24. 根据权利要求23所述的智能功率模块的制造方法，其特征在于，在所述步骤P30中，还包括对所述散热器进行清洗的步骤；
    在所述步骤P50中，在无氧环境中烘烤所述散热器，烘烤时间大于2h，烘烤温度为110℃-140℃。
  25. 一种智能功率模块的制造方法，其特征在于，包括：
    Q10：形成散热器；
    Q20：以所述散热器作为功率模块基材，在所述功率模块基材的一侧形成绝缘层；
    Q30：在所述绝缘层上不与所述散热器接触的一侧形成焊接区和引脚；
    Q40：在所述焊接区的功率焊接区装配至少一个功率器件；
    Q50：形成密封层以完成所述智能功率模块的制作。
  26. 根据权利要求25所述的智能功率模块的制造方法，其特征在于，所述焊接区还包括非功率焊接区，在所述非功率焊接区装配至少一个非功率器件，
    步骤Q10包括步骤Q11：利用湿式碳素复合层形成散热器；
    步骤Q30包括步骤Q31：在所述散热器上不与所述绝缘层接触的一侧形成散热褶皱，所述散热褶皱对应于所述至少一个功率器件所在的区域；
    步骤Q40包括：
    Q41：在所述功率焊接区涂布第一锡膏层；
    Q42：在所述功率焊接区装配所述至少一个功率器件后，对所述第一锡膏层进行回流焊 处理以固化所述第一锡膏层；
    Q43：在所述非功率焊接区涂布第二锡膏层；
    Q44：在所述非功率焊接区装配所述至少一个非功率器件后，对所述锡膏层进行回流焊处理以固化所述第二锡膏层；
    Q45：对所述散热器进行清洗处理，其中清洗处理包括喷淋处理和/或超声清洗处理。
  27. 根据权利要求25所述的智能功率模块的制造方法，其特征在于，步骤Q30包括：
    Q’31：在所述绝缘层上不与所述散热层接触的一侧形成金属种子层，其中，所述金属种子层的厚度为0.01至0.1微米；
    Q’32：对所述种子层进行电镀处理以形成电路布线，其中，所述电路布线的厚度为1至5微米；
    Q’33：刻蚀处理所述电路布线以形成所述焊接区、所述引脚和焊垫；
    Q’34：在所述焊接区、所述引脚和所述焊垫之间连接有金属线。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108459236A (zh) * 2018-05-09 2018-08-28 奥克斯空调股份有限公司 一种用于大功率器件散热器的漏电检测结构
CN113825301A (zh) * 2021-09-18 2021-12-21 广东汇芯半导体有限公司 半导体电路和半导体电路的制造方法
US11495521B2 (en) 2019-08-30 2022-11-08 Delta Electronics (Shanghai) Co., Ltd Power module and method for manufacturing the same

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110753486B (zh) * 2018-07-24 2024-02-20 广东美的制冷设备有限公司 高集成智能功率模块和空调器
CN109325297B (zh) * 2018-09-27 2022-03-08 郑州云海信息技术有限公司 一种管理束线管长度的方法以及服务器
US10848074B2 (en) * 2018-10-12 2020-11-24 Electronics And Telecommunications Research Institute High voltage bridge rectifier
WO2020133840A1 (zh) * 2018-12-29 2020-07-02 广东美的制冷设备有限公司 高集成功率模块和电器
EP3961692A4 (en) * 2019-04-25 2023-05-24 Kyocera Corporation CIRCUIT BOARD, ENCAPSULATION OF AN ELECTRONIC ELEMENT PACKAGE AND ELECTRONIC DEVICE
DE102019125108A1 (de) * 2019-09-18 2021-03-18 Audi Ag Leistungselektronikanordnung umfassend eine Leiterplatte und ein Leistungsmodul, Verfahren zur Herstellung einer Leistungselektronikanordnung, Kraftfahrzeug umfassend eine Leistungselektronikanordnung
CN110492758B (zh) * 2019-09-26 2024-08-23 苏州英威腾电力电子有限公司 一种高压功率单元及高压变频器
CN110783289B (zh) * 2019-11-04 2023-03-24 汉斯自动化科技(江苏)有限公司 Igbt模块保护装置
CN112071862B (zh) * 2020-09-03 2024-01-19 Tcl华星光电技术有限公司 发光面板及其制备方法、显示面板
CN114975128B (zh) * 2021-02-25 2025-03-11 珠海零边界集成电路有限公司 一种智能功率模块及其制备方法
CN113394176B (zh) * 2021-06-23 2024-10-22 上海道之科技有限公司 一种可提高模块安装可靠性的双面冷却功率模块
CN114334920A (zh) * 2021-12-31 2022-04-12 佛山市国星光电股份有限公司 分立器件、功率模块和散热系统
CN114552956A (zh) * 2022-03-01 2022-05-27 西安交通大学 一种用于SiCMOSFET的高集成化半桥驱动模块
CN117529007A (zh) * 2022-07-28 2024-02-06 比亚迪半导体股份有限公司 功率模块、逆变器、电机控制器和车辆
CN115763396B (zh) * 2022-11-03 2024-02-02 江苏东海半导体股份有限公司 一种防静电igbt模块
EP4584817A1 (de) * 2022-11-30 2025-07-16 Siemens Aktiengesellschaft Halbleiteranordnung mit zumindest einem halbleiterelement
WO2024239144A1 (zh) * 2023-05-19 2024-11-28 华为数字能源技术有限公司 电源模块及充电设备
CN118299357B (zh) * 2024-06-05 2024-09-03 派恩杰半导体（杭州）有限公司 一种塑封boost半导体模块及封装结构
CN118899289B (zh) * 2024-08-18 2025-03-25 致瞻科技(上海)有限公司 一种塑封功率模块结构
CN120497215B (zh) * 2025-04-29 2026-04-03 华中科技大学 一种低感低热阻耐高温SiC功率半导体器件封装架构

Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11126870A (ja) * 1997-10-21 1999-05-11 Denso Corp フィン一体型放熱板及びその製造方法
CN102047414A (zh) * 2008-06-12 2011-05-04 三菱电机株式会社 电力半导体电路装置及其制造方法
US20120001349A1 (en) * 2010-06-30 2012-01-05 Toyota Jidosha Kabushiki Kaisha Method of manufacturing semiconductor modules and semiconductor module
CN102484103A (zh) * 2009-08-31 2012-05-30 阿波制纸株式会社 薄纸板散热器
JP2012169529A (ja) * 2011-02-16 2012-09-06 Stanley Electric Co Ltd 放熱器
CN104112740A (zh) * 2013-09-23 2014-10-22 广东美的制冷设备有限公司 智能功率模块及其制造方法
CN104112719A (zh) * 2013-08-22 2014-10-22 广东美的制冷设备有限公司 混合集成电路模块及其制造方法
CN104752373A (zh) * 2015-03-23 2015-07-01 广东美的制冷设备有限公司 智能功率模块及其制造方法
CN104767417A (zh) * 2015-03-23 2015-07-08 广东美的制冷设备有限公司 智能功率模块的控制电路、智能功率模块及其制造方法
CN104766842A (zh) * 2015-03-23 2015-07-08 广东美的制冷设备有限公司 智能功率模块及其制造方法
CN104767396A (zh) * 2015-03-23 2015-07-08 广东美的制冷设备有限公司 智能功率模块及其制造方法
CN104779174A (zh) * 2015-03-23 2015-07-15 广东美的制冷设备有限公司 功率模块的制作方法
CN104795388A (zh) * 2015-03-23 2015-07-22 广东美的制冷设备有限公司 智能功率模块及其制造方法
CN104795974A (zh) * 2015-03-23 2015-07-22 广东美的制冷设备有限公司 智能功率模块的控制电路、智能功率模块及其制造方法
CN104835794A (zh) * 2015-03-23 2015-08-12 广东美的制冷设备有限公司 智能功率模块及其制造方法
CN204559407U (zh) * 2015-03-23 2015-08-12 广东美的制冷设备有限公司 智能功率模块
CN204558448U (zh) * 2015-03-23 2015-08-12 广东美的制冷设备有限公司 智能功率模块
CN204596778U (zh) * 2015-03-23 2015-08-26 广东美的制冷设备有限公司 智能功率模块
CN105047623A (zh) * 2015-03-23 2015-11-11 广东美的制冷设备有限公司 智能功率模块及其制造方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4140238B2 (ja) * 2001-12-26 2008-08-27 トヨタ自動車株式会社 半導体モジュールの接合構造
JP3847691B2 (ja) * 2002-09-26 2006-11-22 三菱電機株式会社 電力用半導体装置
US20060164813A1 (en) * 2004-11-30 2006-07-27 Kabushiki Kaisha Toshiba Semiconductor package and semiconductor module
KR100708659B1 (ko) * 2005-01-15 2007-04-17 삼성에스디아이 주식회사 지능형 전원 모듈의 방열 구조, 이를 구비한 디스플레이모듈 및 지능형 전원 모듈의 방열판 설치 방법
JP4492454B2 (ja) * 2005-06-20 2010-06-30 富士電機システムズ株式会社 パワー半導体モジュール
JP4539531B2 (ja) * 2005-10-26 2010-09-08 トヨタ自動車株式会社 車両の駆動装置
JP5271487B2 (ja) * 2006-08-31 2013-08-21 ダイキン工業株式会社 電力変換装置
JP4934559B2 (ja) * 2007-09-27 2012-05-16 オンセミコンダクター・トレーディング・リミテッド 回路装置およびその製造方法
JP2009218416A (ja) * 2008-03-11 2009-09-24 Daikin Ind Ltd 半導体回路
JP4803241B2 (ja) * 2008-11-27 2011-10-26 三菱電機株式会社 半導体モジュール
JP2010212577A (ja) * 2009-03-12 2010-09-24 Aisin Aw Co Ltd 半導体モジュール
JPWO2010147199A1 (ja) * 2009-06-19 2012-12-06 株式会社安川電機 配線基板および電力変換装置
JP5467933B2 (ja) * 2010-05-21 2014-04-09 株式会社東芝 半導体装置
CN103081098B (zh) * 2010-09-02 2015-08-05 丰田自动车株式会社 半导体模块
JP5770519B2 (ja) * 2011-04-20 2015-08-26 株式会社日本自動車部品総合研究所 冷却フィン構造
CN103477428B (zh) * 2011-05-13 2016-10-19 富士电机株式会社 半导体器件及其制造方法
JP2012256779A (ja) * 2011-06-10 2012-12-27 Ryosan Co Ltd ヒートシンク
JP2013030649A (ja) * 2011-07-29 2013-02-07 Mitsubishi Electric Corp 半導体モジュール及びその製造方法
JP2013070026A (ja) * 2011-09-08 2013-04-18 Rohm Co Ltd 半導体装置、半導体装置の製造方法、半導体装置の実装構造、およびパワー用半導体装置
KR101289196B1 (ko) * 2011-09-14 2013-07-26 삼성전기주식회사 전력 모듈 패키지 및 그 제조방법
KR101581610B1 (ko) * 2012-03-22 2016-01-11 미쓰비시덴키 가부시키가이샤 반도체 장치 및 그 제조 방법
KR101540146B1 (ko) * 2012-06-22 2015-07-28 삼성전기주식회사 전력 모듈용 방열 시스템
WO2014014012A1 (ja) * 2012-07-19 2014-01-23 三菱電機株式会社 電力用半導体モジュール
EP2814056B1 (en) * 2012-09-13 2017-07-12 Fuji Electric Co., Ltd. Semiconductor device, method for attaching heat dissipating member to semiconductor device, and method for manufacturing semiconductor device
JP6028592B2 (ja) * 2013-01-25 2016-11-16 三菱電機株式会社 半導体装置
KR101319564B1 (ko) * 2013-06-10 2013-10-23 이진성 전기전자 기기용 방열구조체
CN105940491B (zh) * 2014-08-06 2019-06-25 富士电机株式会社 半导体装置
JP6920790B2 (ja) * 2016-05-24 2021-08-18 ローム株式会社 インテリジェントパワーモジュール、電気自動車またはハイブリッドカー、およびインテリジェントパワーモジュールの組み立て方法

Patent Citations (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11126870A (ja) * 1997-10-21 1999-05-11 Denso Corp フィン一体型放熱板及びその製造方法
CN102047414A (zh) * 2008-06-12 2011-05-04 三菱电机株式会社 电力半导体电路装置及其制造方法
CN102484103A (zh) * 2009-08-31 2012-05-30 阿波制纸株式会社 薄纸板散热器
US20120001349A1 (en) * 2010-06-30 2012-01-05 Toyota Jidosha Kabushiki Kaisha Method of manufacturing semiconductor modules and semiconductor module
JP2012169529A (ja) * 2011-02-16 2012-09-06 Stanley Electric Co Ltd 放熱器
CN104112719A (zh) * 2013-08-22 2014-10-22 广东美的制冷设备有限公司 混合集成电路模块及其制造方法
CN104112740A (zh) * 2013-09-23 2014-10-22 广东美的制冷设备有限公司 智能功率模块及其制造方法
CN104767417A (zh) * 2015-03-23 2015-07-08 广东美的制冷设备有限公司 智能功率模块的控制电路、智能功率模块及其制造方法
CN104752373A (zh) * 2015-03-23 2015-07-01 广东美的制冷设备有限公司 智能功率模块及其制造方法
CN104766842A (zh) * 2015-03-23 2015-07-08 广东美的制冷设备有限公司 智能功率模块及其制造方法
CN104767396A (zh) * 2015-03-23 2015-07-08 广东美的制冷设备有限公司 智能功率模块及其制造方法
CN104779174A (zh) * 2015-03-23 2015-07-15 广东美的制冷设备有限公司 功率模块的制作方法
CN104795388A (zh) * 2015-03-23 2015-07-22 广东美的制冷设备有限公司 智能功率模块及其制造方法
CN104795974A (zh) * 2015-03-23 2015-07-22 广东美的制冷设备有限公司 智能功率模块的控制电路、智能功率模块及其制造方法
CN104835794A (zh) * 2015-03-23 2015-08-12 广东美的制冷设备有限公司 智能功率模块及其制造方法
CN204559407U (zh) * 2015-03-23 2015-08-12 广东美的制冷设备有限公司 智能功率模块
CN204558448U (zh) * 2015-03-23 2015-08-12 广东美的制冷设备有限公司 智能功率模块
CN204596778U (zh) * 2015-03-23 2015-08-26 广东美的制冷设备有限公司 智能功率模块
CN105047623A (zh) * 2015-03-23 2015-11-11 广东美的制冷设备有限公司 智能功率模块及其制造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108459236A (zh) * 2018-05-09 2018-08-28 奥克斯空调股份有限公司 一种用于大功率器件散热器的漏电检测结构
CN108459236B (zh) * 2018-05-09 2024-03-08 奥克斯空调股份有限公司 一种用于大功率器件散热器的漏电检测结构
US11495521B2 (en) 2019-08-30 2022-11-08 Delta Electronics (Shanghai) Co., Ltd Power module and method for manufacturing the same
CN113825301A (zh) * 2021-09-18 2021-12-21 广东汇芯半导体有限公司 半导体电路和半导体电路的制造方法

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