WO2020133840A1 - 高集成功率模块和电器 - Google Patents

高集成功率模块和电器 Download PDF

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Publication number
WO2020133840A1
WO2020133840A1 PCT/CN2019/084098 CN2019084098W WO2020133840A1 WO 2020133840 A1 WO2020133840 A1 WO 2020133840A1 CN 2019084098 W CN2019084098 W CN 2019084098W WO 2020133840 A1 WO2020133840 A1 WO 2020133840A1
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WO
WIPO (PCT)
Prior art keywords
control unit
highly integrated
power module
gate bipolar
insulated gate
Prior art date
Application number
PCT/CN2019/084098
Other languages
English (en)
French (fr)
Inventor
苏宇泉
冯宇翔
Original Assignee
广东美的制冷设备有限公司
美的集团股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201811640661.5A external-priority patent/CN109510561B/zh
Priority claimed from CN201822277636.7U external-priority patent/CN209448682U/zh
Priority claimed from CN201822277634.8U external-priority patent/CN209329996U/zh
Priority claimed from CN201822274207.4U external-priority patent/CN209184524U/zh
Priority claimed from CN201822277632.9U external-priority patent/CN209448658U/zh
Application filed by 广东美的制冷设备有限公司, 美的集团股份有限公司 filed Critical 广东美的制冷设备有限公司
Priority to JP2021536717A priority Critical patent/JP7174856B2/ja
Publication of WO2020133840A1 publication Critical patent/WO2020133840A1/zh
Priority to US17/357,113 priority patent/US20210320585A1/en

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F24—HEATING; RANGES; VENTILATING
    • F24F—AIR-CONDITIONING; AIR-HUMIDIFICATION; VENTILATION; USE OF AIR CURRENTS FOR SCREENING
    • F24F11/00—Control or safety arrangements
    • F24F11/88—Electrical aspects, e.g. circuits
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/42—Circuits or arrangements for compensating for or adjusting power factor in converters or inverters
    • H02M1/4208—Arrangements for improving power factor of AC input
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
    • H02P27/04—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
    • H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Definitions

  • This application relates to the technical field of electrical appliances, specifically, to highly integrated power modules and electrical appliances.
  • the main parts of power devices used in electric control of air conditioners are rectifier bridge, power factor correction element (PFC), compressor intelligent power module (IPM) and fan IPM.
  • PFC power factor correction element
  • IPM compressor intelligent power module
  • fan IPM fan IPM
  • an object of this application is to propose a highly integrated power module that integrates power factor correction elements, rectifier bridges, compressor inverters and fan inverters on the same substrate, which can effectively save the power devices It occupies an area and has a good heat dissipation effect. It can control the reliability of the above power devices in a unified manner, is easy to maintain, or is helpful to improve the problem of line optimization.
  • the application provides a highly integrated power module.
  • the highly integrated power module includes: a substrate; a power factor correction element, a rectifier bridge, a compressor inverter, and a fan inverter provided on the substrate, wherein the rectifier bridge is provided at The first side of the power factor correction element, the compressor inverter is provided on the second side of the power factor correction element, and the fan inverter is provided on the third side of the compressor inverter
  • the rectifier bridge is electrically connected to the power factor correction element
  • the power factor correction element is electrically connected to the compressor inverter and the fan inverter.
  • the distribution of the above power devices is relatively compact and the degree of integration is high It occupies a small area but does not affect heat dissipation. It can make full use of space, which is conducive to uniformly controlling the reliability of the above power devices, easy to develop and maintain, and because the arrangement of power devices matches the direction of current flow, circuit wiring is simplified. Greatly reduce the cost of highly integrated power modules.
  • the highly integrated power module includes: a substrate; a power factor correction element, a rectifier bridge, a compressor inverter, and a fan inverter provided on the substrate, wherein the rectifier bridge is provided at On the left side of the power factor correction element, the compressor inverter is provided on the right side of the power factor correction element, and the fan inverter is provided on the right side of the compressor inverter;
  • the rectifier bridge is electrically connected to the power factor correction element, and the power factor correction element is electrically connected to the compressor inverter and the fan inverter.
  • the rectifier bridge is disposed on the left side of the power factor correction element
  • the compressor inverter is disposed on the upper side of the power factor correction element
  • the fan inverter is disposed on The lower side of the compressor inverter.
  • the rectifier bridge is provided on the upper side of the power factor correction element
  • the compressor inverter is provided on the lower side of the power factor correction element
  • the fan inverter is provided on The lower side of the compressor inverter.
  • the rectifier bridge is disposed on the left side of the power factor correction element
  • the compressor inverter is disposed on the right side of the power factor correction element
  • the fan inverter is disposed on The left side of the compressor inverter.
  • the compressor inverter includes a first device unit and a first control unit that are arranged at intervals, and the first control unit is provided on the right side of the first device unit.
  • the compressor inverter includes a first device unit and a first control unit that are arranged at intervals, and the first control unit is provided on the lower side of the first device unit.
  • the first device unit includes six IGBT modules, each of which includes an insulated gate bipolar transistor and a fast recovery diode,
  • At least one of the IGBT modules is arranged horizontally, and at least a part of the horizontally arranged IGBT modules is arranged between two sub-elements in the power factor correction element.
  • one of the IGBT modules is horizontally arranged, and at least a part of the fast recovery diode in the horizontally arranged IGBT module is arranged in one of the two sub-elements in the power factor correction element
  • the five IGBT modules are arranged vertically, and the fast recovery diode in each of the vertically arranged IGBT modules is located above the insulated gate bipolar transistor.
  • the insulated gate bipolar transistor in the horizontally arranged IGBT module is located to the right of the fast recovery diode in the horizontally arranged IGBT module.
  • the compressor inverter includes a first device unit and a first control unit arranged at intervals, the first device unit includes a first horizontal section and a second horizontal section, the first level A section is provided on the upper side of the power factor correction element, and at least a portion of the second horizontal section is provided on the right side of the power factor correction element.
  • the first control unit is provided on the upper side of the second horizontal section, and is located on the horizontal side of at least a portion of the first horizontal section.
  • the first horizontal section and the second horizontal section each include three vertically arranged IGBT modules, and each of the IGBT modules includes an insulated gate bipolar transistor and a fast recovery diode, wherein In each of the IGBT modules in the first horizontal section, the fast recovery diode is located on the upper side of the insulated gate bipolar transistor, and in each of the IGBTs in the second horizontal section In the module, the fast recovery diode is located on the lower side of the insulated gate bipolar transistor.
  • the compressor inverter includes a first device unit and a first control unit that are arranged at intervals, and the first control unit is provided on the lower side of the first device unit.
  • the first device unit includes six IGBT modules, each of which includes an insulated gate bipolar transistor and a fast recovery diode, wherein at least one of the IGBT modules is vertically arranged , And at least a part of the vertically arranged IGBT module is arranged between two sub-elements in the power factor correction element.
  • the insulated gate bipolar transistor in each of the vertically arranged IGBT modules is located on the lower side of the fast recovery diode, and one of them is arranged vertically At least a part of the fast recovery diode in the IGBT module is arranged between two of the sub-elements in the power factor correction element; two of the IGBT modules are arranged horizontally, and each horizontally arranged In the IGBT module, the fast recovery diode is located on the right side of the insulated gate bipolar transistor.
  • the fan inverter includes a second device unit and a second control unit that are arranged at intervals
  • the second device unit includes six reverse-conducting insulated gate bipolar transistors, six A part of the reverse-conducting insulated gate bipolar transistors are distributed linearly along the horizontal direction to form a horizontal segment.
  • Six of the reverse-conducting insulated gate bipolar transistors Another part of the reverse conduction insulated gate bipolar transistors are distributed at a linear interval in the vertical direction to form a vertical segment, the vertical segment is disposed above the horizontal segment, wherein the second control unit is disposed at Above the horizontal section and located on the horizontal side of at least a part of the vertical section.
  • the first control unit is disposed on a horizontal side of at least a part of the vertical segment, and is located on the left side of the second control unit.
  • the first control unit and the second control unit are located on the same side of the vertical segment.
  • the fan inverter includes a second device unit and a second control unit
  • the second device unit includes six reverse-conducting insulated gate bipolar transistors, and six reverse-conducting types A part of the insulated gate bipolar transistors
  • the reverse conductive insulated gate bipolar transistors are distributed at a linear interval in the horizontal direction to form a third horizontal segment, and six of the reverse conductive insulated gate bipolar transistors
  • the reverse conduction insulated gate bipolar transistors are distributed at a linear interval in the vertical direction to form a vertical segment, and the vertical segment is disposed on the upper side of the third horizontal segment, wherein the second control unit It is arranged on the horizontal side of at least a part of the vertical section.
  • the second control unit is provided on the right side of the vertical segment.
  • the first control unit is provided on the upper side of the second horizontal section and on the right side of the first horizontal section.
  • the fan inverter includes a second device unit and a second control unit that are arranged at intervals
  • the second device unit includes six reverse-conducting insulated gate bipolar transistors, six A part of the reverse-conducting insulated gate bipolar transistors are distributed linearly along the horizontal direction to form a horizontal segment.
  • Six of the reverse-conducting insulated gate bipolar transistors Another part of the reverse conduction insulated gate bipolar transistors are spaced apart in a straight line along the vertical direction to form a vertical segment, the vertical segment is disposed on the upper side of the horizontal segment, wherein the second control unit is disposed On the upper side of the horizontal section, and on the horizontal side of at least a part of the vertical section.
  • the first control unit is provided on the horizontal side of at least a part of the vertical segment and is located on the upper side of the second control unit.
  • the first control unit and the second control unit are located on the same side of the vertical segment.
  • the fan inverter includes a second device unit and a second control unit that are arranged at intervals
  • the second device unit includes six reverse-conducting insulated gate bipolar transistors, six A part of the reverse-conducting insulated gate bipolar transistors are distributed linearly along the horizontal direction to form a horizontal segment.
  • Six of the reverse-conducting insulated gate bipolar transistors Another part of the reverse conduction insulated gate bipolar transistors are distributed at a linear interval in the vertical direction to form a vertical segment, the vertical segment is disposed on the right side of the horizontal segment, wherein the second control unit is disposed On the left side of the vertical section, and on one side of at least a part of the horizontal section in the vertical direction.
  • the second control unit is disposed on an upper side directly facing at least a part of the horizontal section.
  • the second control unit is provided on the lower side directly opposite to at least a part of the horizontal section, and on the left side directly opposite to at least a part of the vertical section.
  • the highly integrated power module further includes: a strong electric pin, the strong electric pin is disposed on the first edge of the substrate, the strong electric pin and the rectifier bridge respectively Input terminal, output terminal of the rectifier bridge, output terminal of the power factor correction element, collector and emitter of the insulated gate bipolar transistor of the compressor inverter, the fan inverter
  • the collector and emitter of the reverse-conducting insulated gate bipolar transistor are electrically connected;
  • a weak current pin the weak current pin is provided on the second edge of the substrate, and the weak current pin is respectively connected with the The first control unit and the second control unit are electrically connected.
  • the highly integrated power module further includes at least one of a connection wire, a resistance element, and a capacitance element, and the connection wire, the resistance element, and the capacitance element are provided on the substrate area.
  • the application provides an electrical appliance.
  • the appliance includes the aforementioned highly integrated power module. The inventor found that the electric appliance has better heat dissipation effect, longer service life, and can maintain better performance during longer use, and the cost is lower.
  • FIG. 1 is a schematic structural diagram of a highly integrated power module in an embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of a highly integrated power module in another embodiment of the present application.
  • FIG. 3 is a schematic structural diagram of a highly integrated power module in another embodiment of the present application.
  • FIG. 4 is a schematic structural diagram of a highly integrated power module in another embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a highly integrated power module in another embodiment of the present application.
  • FIG. 6 is a schematic structural diagram of a highly integrated power module in another embodiment of the present application.
  • FIG. 7 is a schematic structural diagram of a highly integrated power module in an embodiment of the present application.
  • FIG. 8 is a schematic structural diagram of a highly integrated power module in another embodiment of the present application.
  • FIG. 9 is a schematic structural diagram of a highly integrated power module in another embodiment of the present application.
  • the application provides a highly integrated power module.
  • the highly integrated power module includes: a substrate and a power factor correction element (PFC), a rectifier bridge, a compressor inverter, and a fan inverter provided on the substrate, wherein the rectifier The bridge is provided on the first side of the power factor correction element, the compressor inverter is provided on the second side of the power factor correction element, and the fan inverter is provided on the compressor inverter Third side; the rectifier bridge is electrically connected to the power factor correction element, and the power factor correction element is electrically connected to the compressor inverter and the fan inverter.
  • PFC power factor correction element
  • the rectifier bridge is electrically connected to the power factor correction element
  • the power factor correction element is electrically connected to the compressor inverter and the fan inverter.
  • the distribution of the above power devices is relatively compact, the degree of integration is high, and the occupied area is small but not It affects heat dissipation, can make full use of space, is conducive to unified control of the reliability of the above power devices, easy to develop and maintain, and because the arrangement of power devices coincides with the current flow, circuit wiring is simplified, and the current flows from one power device Another power device has a shorter process and less heat generation, so that the temperature in the integrated power module is not too high, which greatly reduces the cost of the high integrated power module.
  • the highly integrated power module includes: a substrate 100; a power factor correction element 200, a rectifier bridge 300, a compressor inverter 400, and a fan inverter provided on the substrate 100 500, wherein the rectifier bridge 300 is disposed on the left side of the power factor correction element 200, the compressor inverter 400 is disposed on the right side of the power factor correction element 200, and the fan inverter 500 is provided on the right side of the compressor inverter 400; the rectifier bridge 300 is electrically connected to the power factor correction element 200, and the power factor correction element 200 is connected to the compressor inverter 400 and the The fan inverter 500 is electrically connected.
  • the highly integrated power module further includes: a strong current pin 110, the strong current lead 110 is provided on the lower edge of the substrate 100, and the strong current pin 110 is The input end of the rectifier bridge 300, the output end of the rectifier bridge 300, the output end of the power factor correction element 200, the compressor inverter 400 and the fan inverter 500 are electrically connected; At the foot 120, the weak current pin 120 is disposed on the upper edge of the substrate, and the weak current pin 120 is electrically connected to the compressor inverter 400 and the fan inverter 500.
  • the above power device can be effectively driven, and the signals generated in the power device can be effectively transmitted in time, so that the highly integrated power module operates efficiently.
  • the power factor correction element if the power factor correction element is disposed on the edge of a highly integrated power module, the heat generated by it can only be diffused in one direction, the heat dissipation efficiency is low, and the reliability is low, which leads to a short service life.
  • the compressor inverter 400 includes a first device unit 410 and a first control unit 420 disposed at intervals, the first control unit 420 is disposed on the first device unit The right side of 410, wherein the first control unit 420 is electrically connected to the weak current pin 120. Therefore, the current flowing through the first device unit is small, and it is arranged on the right side of the power factor correction element to facilitate heat dissipation, and the first control unit is arranged on the side of the first device unit away from the PFC, which can reduce the high temperature of the PFC The influence on the first control unit prolongs the service life of the first control unit, and has a good effect of controlling the first device unit during a long period of use.
  • the weak current pin may be electrically connected to the IC power supply, the ground wire, the gate control terminal of the insulated gate bipolar transistor, and the fault output terminal in the first control unit.
  • the first device unit 410 includes six IGBT modules 411, and each of the IGBT modules 411 includes an insulated gate bipolar transistor 401 and a fast recovery diode 402, wherein , At least one of the IGBT modules 411 is horizontally arranged, and at least a part of the horizontally arranged IGBT modules 411 is arranged in two sub-elements in the power factor correction element 200 (such as a diode 210 and an insulated gate bipolar transistor 220) In between, the collector and emitter of the insulated gate bipolar transistor 401 are electrically connected to the strong current pin 110.
  • the power factor correction element 200 such as a diode 210 and an insulated gate bipolar transistor 220
  • the arrangement of the first device unit and the PFC is more compact, which in turn makes the arrangement of each power device in the highly integrated power module more compact, higher integration, higher space utilization, and more conducive to reducing high integration
  • the occupied area of the power module does not affect the heat dissipation, it is easier to control the reliability of the above power devices in a unified manner, and the cost is lower.
  • one of the IGBT modules 411 is horizontally arranged, and at least a part of the fast recovery diode 402 in the horizontally arranged IGBT modules 411 is arranged in the power factor correction element 200
  • the insulated gate bipolar transistor 401 in the horizontally arranged IGBT module 411 is located on the right side of the fast recovery diode 402 in the horizontally arranged IGBT module 411;
  • the five IGBT modules 411 are vertically arranged, and the fast recovery diode 402 in each vertically arranged IGBT module 411 is located on the upper side (or referred to as the upper side) of the insulated gate bipolar transistor 401.
  • the use of an insulated gate bipolar transistor in combination with a fast recovery diode can effectively reduce the loss of the transition state, and at least a part of the fast recovery diode is located between the two sub-elements provided in the power factor correction element. It makes the arrangement of each power device in the highly integrated power module more compact, higher integration, and higher space utilization, which is more conducive to reducing the occupied area of the highly integrated power module but does not affect heat dissipation, and it is easier to control the above uniformly The reliability of power devices is lower in cost.
  • the “vertical setting” in the text refers to the vertical distribution of the insulated gate bipolar transistor 401 and the fast recovery diode 402 in the IGBT module 411; the “horizontal setting” in the text refers to the IGBT module 411
  • the insulated gate bipolar transistor 401 and the fast recovery diode 402 are arranged horizontally in the left-right direction.
  • the specifics of the "two sub-elements" in the above-mentioned “at least a part of the fast recovery diode 402 in one of the horizontally arranged IGBT modules 411 is disposed between the two sub-elements in the power factor correction element 200"
  • the type there is no restriction on the type.
  • at least a part of the fast recovery diode 402 in one horizontally arranged IGBT module 411 can be arranged between the diode 210 and the insulated gate bipolar transistor 220 in the power factor correction element 200 It may also be arranged between the insulated gate bipolar transistor 220 and the fast recovery diode 230 in the power factor correction element 200.
  • the location of the fast recovery diode 402 in the horizontally arranged IGBT module 411 in FIG. 1 is only used to explain the present application, and cannot be understood as a limitation to the present application.
  • the fan inverter 500 includes a second device unit 510 and a second control unit 520, and the second device unit 510 includes six reverse conduction insulated gate bipolar transistors 511, a part of the six reverse-conducting insulated gate bipolar transistors 511, the reverse-conducting insulated gate bipolar transistors 511 are linearly spaced along the horizontal direction to form a third horizontal segment 501, six In another part of the reverse conduction insulated gate bipolar transistor 511, the reverse conduction insulated gate bipolar transistor 511 is linearly spaced along the vertical direction to form a vertical segment 502, and the vertical segment 502 is disposed in the third Above the horizontal section 501, wherein the second control unit 520 is disposed above the horizontal section 501 and is located on a horizontal side of at least a portion of the vertical section 502, the reverse conduction type insulated gate bipolar type The collector and the emitter of the transistor 511 are electrically connected to the strong current pin 110, and the second control
  • the structural arrangement of the fan inverter is beneficial to fully utilize the space and improve the integration degree of the highly integrated power module, and the heat generated by the power factor correction element has less influence on the second control unit, and the reliability of the power device is high.
  • horizontal refers to a direction parallel to the left-right direction
  • vertical refers to a direction parallel to the vertical direction.
  • the weak current pin may be electrically connected to the IC power supply in the second control unit, the ground wire, the gate control terminal of the reverse conductive insulated gate bipolar transistor, and the fault output terminal.
  • the first control unit 420 is disposed on the horizontal side of at least a portion of the vertical section 502 and is located on the left side of the second control unit 520. Therefore, the high temperature of the PFC has little effect on the first control unit and the second control unit, which is beneficial to prolong the service life of the two, so that it can maintain a high working efficiency during a long period of use, and the A control unit disposed on the left side of the second control unit is advantageous for simplifying circuit wiring.
  • the first control unit 420 and the second control unit 520 are located on the same side of the vertical section 502. As a result, it is more conducive to improving space utilization and makes the integration of highly integrated power modules higher.
  • the first control unit and the second control unit are both disposed on the left side of the vertical segment. Thus, the effect of saving space is better, the integration degree of the highly integrated power module is higher, and the high temperature of the PFC has little effect on the first control unit and the second control unit.
  • a part of the current is output to a peripheral circuit (such as a switching power supply, etc.) through a pin through the rectifier bridge 300, another part flows to the power factor correction element 200, and then a part of the current flows to the power factor correction element 200
  • the current flows from left to right, which is consistent with the arrangement direction of the power devices, which is beneficial to simplify the circuit wiring.
  • the highly integrated power module includes: a substrate 100; a power factor correction element 200, a rectifier bridge 300, a compressor inverter 400, and a fan reverser provided on the substrate 100 Transformer 500, wherein the rectifier bridge 300 is disposed on the left side of the power factor correction element 200, the compressor inverter 400 is disposed on the upper side of the power factor correction element 200, and the fan is inverted
  • the converter 500 is disposed below the power factor correction element 200; the rectifier bridge 300 is electrically connected to the power factor correction element 200, the power factor correction element 200 and the compressor inverter 400 and the The fan inverter 500 is electrically connected.
  • the compressor inverter 400 includes a first device unit 410 and a first control unit 420 arranged at intervals, the first device unit 410 includes a first horizontal section connected to each other 412 and a second horizontal section 413, the first horizontal section 412 is disposed on the upper side of the power factor correction element 200, and at least a portion of the second horizontal section 413 is disposed on the right side of the power factor correction element 200 .
  • the structure of the compressor inverter is conducive to making full use of space, reducing the occupied area of the highly integrated power module, improving the integration of the highly integrated power module, and thus can uniformly control the reliability of the power device, reducing development and maintenance Difficulty.
  • the first horizontal section 412 and the second horizontal section 413 each include three vertically arranged IGBT modules 411, and each of the IGBT modules 411 includes an insulated gate bipolar type A transistor 401 and a fast recovery diode 402, wherein, in each of the IGBT modules 411 in the first horizontal section 412, the fast recovery diode 402 is located on the upper side of the insulated gate bipolar transistor 401, In each of the IGBT modules 411 in the second horizontal section 413, the fast recovery diode 402 is located on the lower side of the insulated gate bipolar transistor 401, and the set of the insulated gate bipolar transistor 401 The electrode and the emitter are electrically connected to the strong current pin 110.
  • the combination of the insulated gate bipolar transistor and the fast recovery diode can effectively reduce the loss of the transition state, and the arrangement of the fast recovery diode and the insulated gate bipolar transistor is conducive to making
  • the arrangement of each power device in the highly integrated power module is more compact, the integration is higher, and the space utilization rate is higher, which is more conducive to reducing the occupied area of the highly integrated power module, and it is easier to uniformly control the reliability of the above power devices , Lower cost, and conducive to line optimization.
  • the first control unit 420 is disposed on the upper side of the second horizontal section 413 and on the horizontal side of at least a portion of the first horizontal section 412, the The first control unit 420 is electrically connected to the weak current pin 120. Therefore, since the current flowing through the first device unit is small, disposing the first device unit between the power factor correction element and the first control unit not only benefits the heat dissipation of the PFC, but also can reduce the high temperature of the PFC on the first control The influence of the unit prolongs the service life of the first control unit, and has a good effect of controlling the first device unit during a long period of use.
  • the first control unit 420 is disposed on the upper side of the second horizontal section 413 and on the right side of the first horizontal section 412.
  • the high temperature of the PFC has a smaller impact on the first control unit, which is more conducive to prolonging its service life, so that it can maintain a high working efficiency during a long period of use.
  • the fan inverter 500 includes a second device unit 510 and a second control unit 520
  • the second device unit 510 includes six reverse-conducting insulated gate bipolar transistors 511, a part of the six reverse-conducting insulated gate bipolar transistors 511, the reverse-conducting insulated gate bipolar transistors 511 are linearly spaced along the horizontal direction to form a third horizontal segment 501, six In another part of the reverse conduction insulated gate bipolar transistor 511, the reverse conduction insulated gate bipolar transistor 511 is linearly spaced along the vertical direction to form a vertical section 502, and the vertical section 502 is disposed in the The upper side of the third horizontal segment 501, wherein the second control unit 520 is disposed on the horizontal side of at least a part of the vertical segment 502, the collector and the emitter of the reverse conduction insulated gate bipolar transistor 511
  • the pole is electrically connected to the strong current pin 110, and the second control unit 520 is electrically
  • the structure of the fan inverter is conducive to making full use of space, improving the integration of highly integrated power modules, and the heat generated by the power factor correction element has little effect on the second control unit, and the reliability of the power device High performance, and less heat generated by the fan inverter, it is conducive to save space by placing it on the edge of the substrate.
  • the weak current pin may be electrically connected to the drive signal control terminal, overcurrent protection, overtemperature protection, and fault output pin in the second control unit.
  • the second control unit 520 is disposed on the right side of the vertical section 502.
  • the high temperature of the PFC has a smaller impact on the second control unit, which is more conducive to prolonging its service life, so that it can maintain a higher working efficiency during a longer period of use, and is more conducive to simplifying circuit wiring.
  • a part of the current is output to a peripheral circuit (such as a switching power supply, etc.) through a pin through the rectifier bridge 300, another part flows to the power factor correction element 200, and then a part of the current flows to the power factor correction element 200
  • the compressor inverter IGBT another part flows to the fan inverter IGBT, the first control unit 420 controls the on or off of the IGBT module 411 in the first device unit 410 to change the compressor rotation frequency; the second control unit 520 controls the second
  • the reverse conduction type insulated gate bipolar transistor 511 in the device unit 510 is turned on or off to control the fan rotation frequency.
  • the highly integrated power module includes: a substrate 100; a rectifier bridge 300, a power factor correction element 200, a compressor inverter 400, and a fan inverter provided on the substrate 100 500; wherein, the rectifier bridge 300 is provided on the upper side of the power factor correction element 200, the compressor inverter 400 is provided on the lower side of the power factor correction element 200, and the fan inverter 500 is provided under the compressor inverter 400 Side; the rectifier bridge 300 is electrically connected to the power factor correction element 200, and the power factor correction element 200 is electrically connected to the compressor inverter 400 and the fan inverter 500, respectively.
  • the compressor inverter 400 includes a first device unit 410 and a first control unit 420 disposed at intervals, the first control unit 420 is disposed on the first device unit 410 Underside.
  • the first device unit 410 since the current flowing through the first device unit 410 is small, setting the first device unit 410 between the power factor correction element 200 and the first control unit 420 is not only beneficial to the heat dissipation of the PFC, but also can reduce the high temperature of the PFC
  • the influence on the first control unit 420 prolongs the service life of the first control unit 420, and has a good effect of controlling the first device unit during a long period of use.
  • the first device unit 410 includes six IGBT modules 411, and each IGBT module 411 includes an insulated gate bipolar transistor (IGBT) 401 and a fast recovery diode 402, where, At least one of the IGBT modules 411 is vertically arranged, and at least a part of the vertically arranged IGBT modules 411 is arranged between two sub-elements in the power factor correction element 200.
  • IGBT insulated gate bipolar transistor
  • the arrangement of the first device unit 410 and the PFC is more compact, which in turn makes the arrangement of each power device in the highly integrated power module more compact, more integrated, and more space-efficient High, reducing the occupied area of highly integrated power modules, it is easier to uniformly control the reliability of the above power devices, and the cost is lower.
  • four IGBT modules 411 are vertically arranged, and the insulated gate bipolar transistor 401 in the vertically arranged IGBT modules is located under the fast recovery diode 402 and one of the vertically arranged IGBT modules At least a part of the fast recovery diode 402 in the 411 is arranged between two sub-elements in the power factor correction element 200; the two IGBT modules 411 are arranged horizontally, and the fast recovery diode 402 in the horizontally arranged IGBT module 411 is located at the insulated gate bipolar The right side of the transistor 401.
  • the combined use of the insulated gate bipolar transistor 401 and the fast recovery diode 402 can effectively reduce the loss of the transition state, and at least a part of the fast recovery diode 402 is located in the power factor correction element without affecting the heat dissipation
  • Between the two sub-elements in 200 is helpful to make the arrangement of each power device in the highly integrated power module more compact, higher integration, higher space utilization, and more conducive to reducing the occupied area of the highly integrated power module, It is easier to uniformly control the reliability of the above power devices and the cost is lower.
  • the specifics of the "two sub-elements" in the above-mentioned “at least a part of the fast recovery diode 402 in one of the vertically arranged IGBT modules 411 is disposed between the two sub-elements in the power factor correction element 200"
  • the type specifically: referring to FIG. 5, at least a part of the fast recovery diode 402 in a vertically arranged IGBT module 411 is provided in the second diode 210 and the power factor correction element of the power factor correction element 200 Between the fast recovery diode 230; if the fast recovery diode 230 of the power factor correction element in FIG.
  • one of the vertical At least a part of the recovery diode 402 is provided between the second diode 210 in the power factor correction element 200 and the insulated gate bipolar transistor 220 of the power factor correction element.
  • the fan inverter 500 includes a second device unit 510 and a second control unit 520 arranged at intervals, and the second device unit 510 includes six reverse-conducting insulated gate bipolar transistors ( RC-IGBT) 511, a part of the six reverse-conducting insulated gate bipolar transistors 511 are distributed at a linear interval in the horizontal direction to form a third horizontal section 501, six reverse Another part of the conductive insulated gate bipolar transistor 511 is the reverse conductive insulated gate bipolar transistor 511 distributed at a linear interval in the vertical direction to form a vertical segment 502 which is disposed on the upper side of the third horizontal segment 501
  • the second control unit 520 is provided on the upper side of the third horizontal section 501 and is located on the horizontal side of at least a part of the vertical section 502. Therefore, the structural arrangement of the fan inverter is beneficial to fully utilize the space and improve the integration degree of the highly integrated power module, and the heat generated by the power
  • the first control unit 420 is disposed on the horizontal side of at least a part of the vertical section 502 and is located on the upper side of the second control unit 520. Therefore, the high temperature of the PFC has little effect on the first control unit 420 and the second control unit 520, which is beneficial to prolong the service life of the two, so that it can maintain a high working efficiency during a long period of use. Moreover, the arrangement of the first control unit on the upper side of the second control unit is beneficial to simplify circuit wiring.
  • the first control unit 420 and the second control unit 520 are located on the same side of the vertical section 502. As a result, the space utilization rate is further improved, making the highly integrated power module more integrated without affecting heat dissipation.
  • the first control unit 420 and the second control unit 520 are both disposed on the right side of the vertical segment 502. Thus, the effect of saving space is better, the integration degree of the highly integrated power module is higher, and the high temperature of the PFC has little effect on the first control unit and the second control unit.
  • a part of the current is output to peripheral circuits (such as switches, power supplies, etc.) through the pin through the rectifier bridge 300, and the other part flows to the power factor correction element 200, and then the current passes through the power factor correction A part of the element 200 flows to the IGBT module 411 in the first device unit 410, and the other part flows to the reverse conduction insulated gate bipolar transistor 511 in the second device unit 510.
  • peripheral circuits such as switches, power supplies, etc.
  • the highly integrated power module includes: a substrate 100; a fan inverter 500, a rectifier bridge 300, a power factor correction element 200, and a compressor inverter provided on the substrate 100 400; wherein, the rectifier bridge 300 is provided on the left side of the power factor correction element 200, the compressor inverter 400 is provided on the right side of the power factor correction element 200, and the fan inverter 500 is provided on the left side of the rectification bridge 300;
  • the bridge 300 is electrically connected to the power factor correction element 200, and the power factor correction element 200 is electrically connected to the compressor inverter 400 and the fan inverter 500, respectively.
  • the compressor inverter 400 includes a first device unit 410 and a first control unit 420 that are spaced apart, and the first control unit 420 is disposed on the edge of the first device 410 unit near the right side The underside.
  • the first control unit 420 on the lower side of the edge of the first device unit 410 near the right side not only benefits the heat dissipation of the PFC, but also reduces the PFC
  • the influence of high temperature on the first control unit 420 minimizes the interference to the first control unit 420, thereby prolonging the service life of the first control unit 420, and has a good control of the first device during a long period of use The role of unit 410.
  • the first device unit 410 includes six IGBT modules 411, and each IGBT module 411 includes an insulated gate bipolar transistor (IGBT) 401 and a fast recovery diode 402, where, At least one IGBT module 411 is horizontally arranged, and at least a part of the horizontally arranged IGBT module 411 is arranged between two sub-elements in the power factor correction element 200.
  • IGBT insulated gate bipolar transistor
  • the arrangement of the first device unit 410 and the PFC is more compact, which in turn makes the arrangement of each power device in the highly integrated power module more compact, more integrated, and more space-efficient High, reducing the occupied area of highly integrated power modules, it is easier to uniformly control the reliability of the above power devices, and the cost is lower.
  • one IGBT module 411 is arranged horizontally, the insulated gate bipolar transistor 401 in the horizontally arranged IGBT module 411 is located on the right side of the fast recovery diode 402, and the horizontally arranged IGBT module At least a part of the fast recovery diode 402 is arranged between two sub-elements in the power factor correction element 200; five IGBT modules 411 are arranged vertically, and the fast recovery diode 402 in each vertically arranged IGBT module 411 is located at the insulated gate bipolar Type transistor 401 on the upper side.
  • the combined use of the insulated gate bipolar transistor 401 and the fast recovery diode 402 can effectively reduce the loss of the transition state, and at least a part of the fast recovery diode 402 is located in the power factor correction element without affecting the heat dissipation
  • Between the two sub-elements in 200 is helpful to make the arrangement of each power device in the highly integrated power module more compact, higher integration, higher space utilization, and more conducive to reducing the occupied area of the highly integrated power module, It is easier to uniformly control the reliability of the above power devices and the cost is lower.
  • the specifics of the "two sub-elements" in the above-mentioned “at least a part of the fast recovery diode 402 in one of the vertically arranged IGBT modules 411 is disposed between the two sub-elements in the power factor correction element 200"
  • the type specifically: referring to FIG. 7, at least a part of the fast recovery diode 402 in a vertically arranged IGBT module 411 is provided in the second diode 210 and the power factor correction element of the power factor correction element 200 Between the insulated gate bipolar transistor 220; if the fast recovery diode 230 of the power factor correction element in FIG.
  • one of the vertically arranged IGBT modules 411 At least a part of the fast recovery diode 402 in is provided between the second diode 210 in the power factor correction element 200 and the fast recovery diode 230 of the power factor correction element.
  • the fan inverter 500 includes a second device unit 510 and a second control unit 520 arranged at intervals.
  • the second device unit 510 includes six reverse-conducting insulated gate bipolar transistors (RC-IGBT) 511, a part of the six reverse-conducting insulated gate bipolar transistors 511 are distributed at a linear interval in the horizontal direction to form a third horizontal section 501, six reverse Another part of the conductive insulated gate bipolar transistor 511 is the reverse conductive insulated gate bipolar transistor 511 which is linearly spaced along the vertical direction to form a vertical segment 502 which is disposed on the right side of the third horizontal segment 501
  • the second control unit 520 is disposed on the left side of the vertical segment 502 and is located on one side of at least a part of the third horizontal segment 501 in the vertical direction.
  • the structural arrangement of the fan inverter 500 is beneficial to make full use of space and improve the integration of highly integrated power modules, and the second control unit 520 is placed at the most edge, which can minimize the PFC to the second control unit Disturbance, thereby prolonging the service life of the second control unit 520, and have a good effect of controlling the second device unit during a long period of use.
  • the second control unit 520 is disposed on the upper side directly facing at least a portion of the third horizontal section 501 and on the left side directly facing at least a portion of the vertical section 502.
  • the second control unit 520 is placed at the most edge, which can reduce the PFC to the second Control unit interference.
  • the second control unit 520 is disposed on the lower side directly facing at least a part of the third horizontal section 501 and on the left side directly facing at least a part of the vertical section 502.
  • the second control unit 520 is placed at the most edge, which can reduce the PFC to the second Control unit interference.
  • the highly integrated power module further includes: a strong current pin 110 that is disposed on the first edge of the substrate 100; a weak current pin 120, the weak current pin 120 is disposed on the second edge of the substrate 100.
  • a strong current pin 110 that is disposed on the first edge of the substrate 100
  • a weak current pin 120 the weak current pin 120 is disposed on the second edge of the substrate 100.
  • the strong current pin and the input end of the rectifier bridge, the output end of the rectifier bridge, the output end of the power factor correction element, the collector and emitter of the insulated gate bipolar transistor of the compressor inverter, The collector and emitter of the reverse conduction insulated gate bipolar transistor of the fan inverter are electrically connected; the weak current pin is electrically connected with the first control unit of the compressor and the second control unit of the fan.
  • the circuit wiring is relatively simple, and the current flow is short, which is beneficial to reduce heat generation and temperature in high-integrated power modules, and thus to improve the yield and operating efficiency of power devices and extend their service life.
  • the weak current pin may also be electrically connected to the drive signal control terminal, overcurrent protection, overtemperature protection, and fault output pin in the second control unit.
  • a part of the current is output to the peripheral circuit (such as a switch, a power supply, etc.) through the pin through the rectifier bridge 300, and the other part flows to the power factor correction element 200, and then the current passes the power factor correction A part of the element 200 flows to the IGBT module 411 in the first device unit 410, and the other part flows to the reverse conduction insulated gate bipolar transistor 511 in the second device unit 510.
  • the peripheral circuit such as a switch, a power supply, etc.
  • the material forming the substrate 100 includes high thermal conductivity materials such as aluminum and ceramics, thereby facilitating the derivation of power devices (including power factor correction element 200, rectifier bridge 300, compressor inverter 400, and fan reverser)
  • the heat generated by the transformer 500 improves the heat dissipation efficiency.
  • an insulating layer, a copper foil trace, a green oil layer, a device pad, etc. are further provided between the substrate 100 and the power device, thereby ensuring that the power device operates normally.
  • the rectifier bridge 300 includes four first diodes 310 arranged at intervals, and the rectifier bridge 300 can effectively convert alternating current to direct current to meet the requirements of subsequent power devices.
  • the material forming the first diode 310 includes semiconductor germanium, silicon, or the like, and thus, the use performance of the diode is good.
  • the power factor correction element 200 includes a second diode 210 spaced in order from the upper side to the lower side, and an insulated gate bipolar type of the power factor correction element There are three sub-elements of the transistor 220 and the fast recovery diode 230 of the power factor correction element.
  • the occupied area of the power factor correction element can be effectively reduced, and its working efficiency is high.
  • the first control unit may be a high voltage integrated circuit (HVIC) which controls six IGBT modules in the first device unit and the insulated gate bipolar transistor 220 of the power factor correction element. Specifically, any three of the six IGBT modules in the first device unit are set as upper arm IGBT modules, and the other three are set as lower arm IGBT modules.
  • the control of the bridge arm IGBT module realizes the adjustment of the compressor rotation frequency. As a result, the working efficiency is higher and the power consumption is lower.
  • the second control unit may be a high-voltage integrated circuit (HVIC), which controls six reverse-conductivity insulated gate bipolar transistors in the second control unit.
  • HVIC high-voltage integrated circuit
  • the reverse-conduction type Any three of the insulated gate bipolar transistors are configured as upper arm reverse conducting insulated gate bipolar transistors, and the other three are configured as lower arm reverse conducting insulated gate bipolar transistors.
  • the control of the bridge arm reverse-conducting insulated gate bipolar transistor and the lower bridge arm reverse-conducting insulated gate bipolar transistor realize the adjustment of the rotation frequency of the fan. As a result, the working efficiency is higher and the power consumption is lower.
  • the highly integrated power module further includes at least one of a connection wire, a resistance element, and a capacitance element, and the connection wire, the resistance element, and the capacitance element are provided in a free area on the substrate .
  • the space in the spare area can be fully utilized, the integration degree and reliability of the highly integrated power module can be improved, the cost can be reduced, and the volume of the electric control can be reduced.
  • the free area refers to the area not covered by the power device.
  • the connecting wire, the resistance element, and the capacitance element are installed in the above arrangement, and packaged in the same housing, high integration, small footprint, and high heat dissipation efficiency can be obtained
  • the highly integrated power module can control the reliability of power devices in a unified manner, with low development and maintenance difficulty and low cost.
  • the application provides an electrical appliance.
  • the appliance includes the highly integrated power module described above. The inventor found that the electric appliance has better heat dissipation effect, longer service life, and can maintain better performance during longer use, and the cost is lower.
  • the above electrical appliance may be an air conditioner
  • the air conditioner may include a fan, a compressor, a heat exchanger, a throttle assembly, and a wind guide component in addition to the highly integrated power module described above.
  • the structures or components necessary for conventional air conditioners such as chassis and panels will not be repeated here.
  • the type of air conditioner may be a hanging type, a cabinet type, or the like.
  • the terms “installation”, “connected”, “connected”, “fixed” and other terms should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection , Or integrated; it can be mechanical connection or electrical connection; it can be directly connected or indirectly connected through an intermediary, it can be the connection between two components or the interaction between two components.
  • installation can be a fixed connection or a detachable connection , Or integrated; it can be mechanical connection or electrical connection; it can be directly connected or indirectly connected through an intermediary, it can be the connection between two components or the interaction between two components.
  • the first feature may be “on” or “below” the second feature "the first and second features are in direct contact, or the first and second features are indirectly through an intermediary contact.
  • the first feature is “above”, “above” and “above” the second feature may be that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature.
  • the first feature is “below”, “below”, and “below” the second feature may be that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is less horizontal than the second feature.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Inverter Devices (AREA)
  • Rectifiers (AREA)

Abstract

本申请提供了高集成功率模块和空调器。其中，高集成功率模块包括：基板；设置在所述基板上的功率因数校正元件、整流桥、压缩机逆变器以及风机逆变器，其中，所述整流桥设置在所述功率因数校正元件的第一侧，所述压缩机逆变器设置在所述功率因数校正元件的第二侧，所述风机逆变器设置在所述压缩机逆变器的第三侧；所述整流桥与所述功率因数校正元件电连接，所述功率因数校正元件与所述压缩机逆变器和所述风机逆变器电连接。

Description

高集成功率模块和电器
优先权信息
本申请请求2018年12月29日向中国国家知识产权局提交的、专利申请号为201811640661.5、201822274207.4、201822277634.8、201822277636.7和201822277632.9的专利申请的优先权和权益，并且通过参照将其全文并入此处。
技术领域
本申请涉及电器技术领域，具体的，涉及高集成功率模块和电器。
背景技术
目前，空调电控用到的功率器件的部分主要有整流桥、功率因数校正元件(PFC)、压缩机智能功率模块(IPM)和风机IPM。传统电控中这些功率器件是分立的，分布于电控的不同区域，相隔较远，功率器件占用面积大，导致其散热面积大，成本较高。
因而，目前的功率器件的设置仍有待改进。
发明内容
本申请旨在至少在一定程度上解决相关技术中的技术问题之一。为此，本申请的一个目的在于提出一种将功率因数校正元件、整流桥、压缩机逆变器以及风机逆变器集成在同一个基板上的高集成功率模块，可以有效节约上述功率器件的占用面积，散热效果佳，可以统一把控上述功率器件的可靠性，容易维修，或者有利于改善线路优化的问题。
在本申请的一个方面，本申请提供了一种高集成功率模块。根据本申请的实施例，该高集成功率模块包括：基板；设置在所述基板上的功率因数校正元件、整流桥、压缩机逆变器以及风机逆变器，其中，所述整流桥设置在所述功率因数校正元件的第一侧，所述压缩机逆变器设置在所述功率因数校正元件的第二侧，所述风机逆变器设置在所述压缩机逆变器的第三侧；所述整流桥与所述功率因数校正元件电连接，所述功率因数校正元件与所述压缩机逆变器和所述风机逆变器电连接。发明人发现，温度最高的PFC处在整流桥和压缩机逆变器中间，其热量可以通过两边有效扩散，有利于提高高集成功率模块的散热效率，上述功率器件的分布比较紧凑，集成度高，占用面积较小但不影响散热，可以充分利用空间，有利于统一把控上述功率器件的可靠性，开发、维修容易，并且由于功率器件的排布与电流流向吻合，使得电路布线得以简化，大大降低高集成功率模块的成本。
根据本申请的实施例，该高集成功率模块包括：基板；设置在所述基板上的功率因数校正元件、整流桥、压缩机逆变器以及风机逆变器，其中，所述整流桥设置在所述功率因数校正元件的左侧，所述压缩机逆变器设置在所述功率因数校正元件的右侧，所述风机逆变器设置在所述压缩机逆变器的右侧；所述整流桥与所述功率因数校正元件电连接，所述功率因数校正元件与所述压缩机逆变器和所述风机逆变器电连接。
根据本申请的实施例，所述整流桥设置在所述功率因数校正元件的左侧，所述压缩机逆变器设置在所述功率因数校正元件的上侧，所述风机逆变器设置在所述压缩机逆变器的下侧。
根据本申请的实施例，所述整流桥设置在所述功率因数校正元件的上侧，所述压缩机逆变器设置在所述功率因数校正元件的下侧，所述风机逆变器设置在所述压缩机逆变器的下侧。
根据本申请的实施例，所述整流桥设置在所述功率因数校正元件的左侧，所述压缩机逆变器设置在所述功率因数校正元件的右侧，所述风机逆变器设置在所述压缩机逆变器的左侧。
根据本申请的实施例，所述压缩机逆变器包括间隔设置的第一器件单元和第一控制单元，所述第一控制单元设置在所述第一器件单元的右侧。
根据本申请的实施例，所述压缩机逆变器包括间隔设置的第一器件单元和第一控制单元，所述第一控制单元设置在所述第一器件单元的下侧。
根据本申请的实施例，所述第一器件单元包括六个IGBT模块，每个所述IGBT模块中包括一个绝缘栅双极型晶体管和一个快恢复二极管，
其中，至少一个所述IGBT模块水平设置，且水平设置的所述IGBT模块的至少一部分设置在所述功率因数校正元件中的两个子元件之间。
根据本申请的实施例，一个所述IGBT模块水平设置，且水平设置的所述IGBT模块中的所述快恢复二极管的至少一部分设置在所述功率因数校正元件中的两个所述子元件之间；五个所述IGBT模块垂直设置，且每个垂直设置的所述IGBT模块中所述快恢复二极管位于所述绝缘栅双极型晶体管的上方。
根据本申请的实施例，水平设置的所述IGBT模块中的所述绝缘栅双极型晶体管位于水平设置的所述IGBT模块中的所述快恢复二极管的右侧。
根据本申请的实施例，所述压缩机逆变器包括间隔设置的第一器件单元和第一控制单元，所述第一器件单元包括第一水平段和第二水平段，所述第一水平段设置在所述功率因数校正元件的上侧，所述第二水平段的至少一部分设置在所述功率因数校正元件的右侧。
根据本申请的实施例，所述第一控制单元设置在所述第二水平段的上侧，且位于所述第一水平段的至少一部分的水平一侧。
根据本申请的实施例，所述第一水平段和第二水平段各包括三个垂直设置的IGBT模块，每个所述IGBT模块中包括一个绝缘栅双极型晶体管和一个快恢复二极管，其中，在所述第一水平段中的每个所述IGBT模块中，所述快恢复二极管位于所述绝缘栅双极型晶体管的上侧，在所述第二水平段中的每个所述IGBT模块中，所述快恢复二极管位于所述绝缘栅双极型晶体管的下侧。
根据本申请的实施例，所述压缩机逆变器包括间隔设置的第一器件单元和第一控制单元，所述第一控制单元设置在所述第一器件单元的下侧。
根据本申请的实施例，所述第一器件单元包括六个IGBT模块，每个所述IGBT模块中包括一个绝缘栅双极型晶体管和一个快恢复二极管，其中，至少一个所述IGBT模块垂直设置，且垂直设置的所述IGBT模块的至少一部分设置在所述功率因数校正元件中的两个子元件之间。
根据本申请的实施例，四个所述IGBT模块垂直设置，每个垂直设置的所述IGBT模块中的所述绝缘栅双极型晶体管位于所述快恢复二极管的下侧，且其中一个垂直设置的所述IGBT模块中的所述快恢复二极管的至少一部分设置在所述功率因数校正元件中的两个所述子元件之间；两个所述IGBT模块水平设置，且每个水平设置的所述IGBT模块中所述快恢复二极管位于所述绝缘栅双极型晶体管的右侧。
根据本申请的实施例，所述风机逆变器包括间隔设置的第二器件单元和第二控制单元，所述第二器件单元包括六个逆导型绝缘栅双极型晶体管，六个所述逆导型绝缘栅双极型晶体管中的一部分所述逆导型绝缘栅双极型晶体管沿水平方向呈直线间隔分布，以形成水平段，六个所述逆导型绝缘栅双极型晶体管中的另一部分所述逆导型绝缘栅双极型晶体管沿垂直方向呈直线间隔分布，以形成垂直段，所述垂直段设置在所述水平段的上方，其中，所述第二控制单元设置在所述水平段的上方，且位于所述垂直段的至少一部分的水平一侧。
根据本申请的实施例，所述第一控制单元设置在所述垂直段的至少一部分的水平一侧，且位于所述第二控制单元的左侧。
根据本申请的实施例，所述第一控制单元和所述第二控制单元位于所述垂直段的同侧。
根据本申请的实施例，所述风机逆变器包括第二器件单元和第二控制单元，所述第二器件单元包括六个逆导型绝缘栅双极型晶体管，六个所述逆导型绝缘栅双极型晶体管中的一部分所述逆导型绝缘栅双极型晶体管沿水平方向呈直线间隔分布，以形成第三水平段，六个所述逆导型绝缘栅双极型晶体管中的另一部分所述逆导型绝缘栅双极型晶体管沿垂直方 向呈直线间隔分布，以形成垂直段，所述垂直段设置在所述第三水平段的上侧，其中，所述第二控制单元设置在所述垂直段的至少一部分的水平一侧。
根据本申请的实施例，所述第二控制单元设置在所述垂直段的右侧。
根据本申请的实施例，所述第一控制单元设置在所述第二水平段的上侧，且位于所述第一水平段的右侧。
根据本申请的实施例，所述风机逆变器包括间隔设置的第二器件单元和第二控制单元，所述第二器件单元包括六个逆导型绝缘栅双极型晶体管，六个所述逆导型绝缘栅双极型晶体管中的一部分所述逆导型绝缘栅双极型晶体管沿水平方向呈直线间隔分布，以形成水平段，六个所述逆导型绝缘栅双极型晶体管中的另一部分所述逆导型绝缘栅双极型晶体管沿垂直方向呈直线间隔分布，以形成垂直段，所述垂直段设置在所述水平段的上侧，其中，所述第二控制单元设置在所述水平段的上侧，且位于所述垂直段的至少一部分的水平一侧。
根据本申请的实施例，所述第一控制单元设置在所述垂直段的至少一部分的水平一侧，且位于所述第二控制单元的上侧。
根据本申请的实施例，所述第一控制单元和所述第二控制单元位于所述垂直段的同侧。
根据本申请的实施例，所述风机逆变器包括间隔设置的第二器件单元和第二控制单元，所述第二器件单元包括六个逆导型绝缘栅双极型晶体管，六个所述逆导型绝缘栅双极型晶体管中的一部分所述逆导型绝缘栅双极型晶体管沿水平方向呈直线间隔分布，以形成水平段，六个所述逆导型绝缘栅双极型晶体管中的另一部分所述逆导型绝缘栅双极型晶体管沿垂直方向呈直线间隔分布，以形成垂直段，所述垂直段设置在所述水平段的右侧，其中，所述第二控制单元设置在所述垂直段的左侧，且位于所述水平段的至少一部分的垂直方向的一侧。
根据本申请的实施例，所述第二控制单元设置在所述水平段的至少一部分的正对的上侧。
根据本申请的实施例，所述第二控制单元设置在所述水平段的至少一部分的正对的下侧，且在所述垂直段的至少一部分的正对的左侧。
根据本申请的实施例，该高集成功率模块还包括：强电引脚，所述强电引脚设置在所述基板的第一边缘上，所述强电引脚分别与所述整流桥的输入端、所述整流桥的输出端、所述功率因数校正元件的输出端、所述压缩机逆变器的所述绝缘栅双极型晶体管的集电极和发射极、所述风机逆变器的所述逆导型绝缘栅双极型晶体管的集电极和发射极电连接；弱电引脚，所述弱电引脚设置在所述基板的第二边缘上，所述弱电引脚分别与所述第一控制单元和所述第二控制单元电连接。
根据本申请的实施例，该高集成功率模块还包括连接导线、电阻元件和电容元件中的至少一种，所述连接导线、所述电阻元件和所述电容元件设置在所述基板上的空余区域。
在本申请的另一方面，本申请提供了一种电器。根据本申请的实施例，该电器包括前面所述的高集成功率模块。发明人发现，该电器的散热效果较佳，使用寿命较长，在较长使用过程中均能保持较佳的使用性能，成本较低。
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具体实施方式
下面详细描述本申请的实施例。下面描述的实施例是示例性的，仅用于解释本申请，而不能理解为对本申请的限制。实施例中未注明具体技术或条件的，按照本领域内的文献所描述的技术或条件或者按照产品说明书进行。
在本申请的一个方面，本申请提供了一种高集成功率模块。根据本申请的实施例，该高集成功率模块包括：基板以及设置在所述基板上的功率因数校正元件(PFC)、整流桥、压缩机逆变器和风机逆变器，其中，所述整流桥设置在所述功率因数校正元件的第一侧，所述压缩机逆变器设置在所述功率因数校正元件的第二侧，所述风机逆变器设置在所述压缩机逆变器的第三侧；所述整流桥与所述功率因数校正元件电连接，所述功率因数校正元件与所述压缩机逆变器和所述风机逆变器电连接。发明人发现，温度最高的PFC处在中间位置，其热量可以通过两边有效扩散，有利于提高高集成功率模块的散热效率，上述功率器件的分布比较紧凑，集成度高，占用面积较小但不影响散热，可以充分利用空间，有利于统一把控上述功率器件的可靠性，开发、维修容易，并且由于功率器件的排布与电流流向吻合，使得电路布线得以简化，且电流由一个功率器件流向另一个功率器件的流程较短， 热量产生量少，使得集成功率模块中的温度不至于过高，大大降低高集成功率模块的成本。
根据本申请的一些实施例，参照图1，该高集成功率模块包括：基板100；设置在所述基板100上的功率因数校正元件200、整流桥300、压缩机逆变器400以及风机逆变器500，其中，所述整流桥300设置在所述功率因数校正元件200的左侧，所述压缩机逆变器400设置在所述功率因数校正元件200的右侧，所述风机逆变器500设置在所述压缩机逆变器400的右侧；所述整流桥300与所述功率因数校正元件200电连接，所述功率因数校正元件200与所述压缩机逆变器400和所述风机逆变器500电连接。
根据本申请的实施例，参照图2，高集成功率模块还包括：强电引脚110，所述强电引110脚设置在所述基板100的下边缘上，所述强电引脚110与所述整流桥300的输入端、所述整流桥300的输出端、所述功率因数校正元件200的输出端、所述压缩机逆变器400和所述风机逆变器500电连接；弱电引脚120，所述弱电引脚120设置在所述基板的上边缘上，所述弱电引脚120与所述压缩机逆变器400和所述风机逆变器500电连接。由此，可以有效驱动上述功率器件，且可以及时有效的传递功率器件中产生的信号，使得高集成功率模块高效的运转。
根据本申请的实施例，若功率因数校正元件设置在高集成功率模块的边缘，则其产生的热量只能单向扩散，散热效率低，可靠性低，进而导致其使用寿命短。
根据本申请的实施例，参照图1，所述压缩机逆变器400包括间隔设置的第一器件单元410和第一控制单元420，所述第一控制单元420设置在所述第一器件单元410的右侧，其中，所述第一控制单元420与所述弱电引脚120电连接。由此，流过第一器件单元的电流较小，其设置在功率因数校正元件的右侧有利于散热，且第一控制单元设置在第一器件单元远离PFC的一侧，可以减少PFC的高温对第一控制单元的影响，延长第一控制单元的使用寿命，且在较长的使用过程中均具有良好的控制第一器件单元的作用。根据本申请的实施例，弱电引脚可以与第一控制单元中的IC供电、地线、绝缘栅双极型晶体管的栅极控制端以及故障输出端等电连接。
根据本申请的实施例，参照图1，所述第一器件单元410包括六个IGBT模块411，每个所述IGBT模块411中包括一个绝缘栅双极型晶体管401和一个快恢复二极管402，其中，至少一个所述IGBT模块411水平设置，且水平设置的所述IGBT模块411的至少一部分设置在所述功率因数校正元件200中的两个子元件(例如二极管210以及绝缘栅双极型晶体管220)之间，所述绝缘栅双极型晶体管401的集电极和发射极与所述强电引脚110电连接。由此，第一器件单元与PFC的排布更加紧凑，进而使得高集成功率模块中的各个功率器件的排布更紧凑，集成度更高，空间利用率更高，更有利于减小高集成功率模块的占用面积 但是不影响散热，更容易统一把控上述功率器件的可靠性，成本更低。
根据本申请的实施例，参照图1，一个所述IGBT模块411水平设置，且水平设置的所述IGBT模块411中的所述快恢复二极管402的至少一部分设置在所述功率因数校正元件200中的两个所述子元件之间，水平设置的所述IGBT模块411中的所述绝缘栅双极型晶体管401位于水平设置的所述IGBT模块411中的所述快恢复二极管402的右侧；五个所述IGBT模块411垂直设置，且每个垂直设置的所述IGBT模块411中所述快恢复二极管402位于所述绝缘栅双极型晶体401管的上侧(或称为上方)。由此，将绝缘栅双极型晶体管与快恢复二极管结合使用可以有效减少转换状态的损耗，且将快恢复二极管的至少一部分位于设置在所述功率因数校正元件中的两个子元件之间有利于使得高集成功率模块中的各个功率器件的排布更紧凑，集成度更高，空间利用率更高，更有利于减小高集成功率模块的占用面积但是不影响散热，更容易统一把控上述功率器件的可靠性，成本更低。
需要说明的是，文中的“垂直设置”是指IGBT模块411中的绝缘栅双极型晶体管401和快恢复二极管402在上下方向上垂直分布设置；文中的“水平设置”是指IGBT模块411中的绝缘栅双极型晶体管401和快恢复二极管402在左右方向上水平分布设置。
根据本申请的实施例，上述“其中一个水平设置的IGBT模块411中的快恢复二极管402的至少一部分设置在功率因数校正元件200中的两个子元件之间”中的“两个子元件”的具体种类没有限制要求，具体地可以参照图1，其中一个水平设置的IGBT模块411中的快恢复二极管402的至少一部分可以设置在功率因数校正元件200中的二极管210和绝缘栅双极型晶体管220之间，还可以设置在功率因数校正元件200中的绝缘栅双极型晶体管220和快恢复二极管230之间。需要说明的是，图1中水平设置的IGBT模块411中的快恢复二极管402的设置位置仅用于说明本申请，而不能理解为对本申请的限制。
根据本申请的实施例，参照图1，所述风机逆变器500包括第二器件单元510和第二控制单元520，所述第二器件单元510包括六个逆导型绝缘栅双极型晶体管511，六个所述逆导型绝缘栅双极型晶体管511中的一部分所述逆导型绝缘栅双极型晶体管511沿水平方向呈直线间隔分布，以形成第三水平段501，六个所述逆导型绝缘栅双极型晶体管511中的另一部分所述逆导型绝缘栅双极型晶体管511沿垂直方向呈直线间隔分布，以形成垂直段502，垂直段502设置在所述第三水平段501的上方，其中，所述第二控制单元520设置在所述水平段501的上方，且位于所述垂直段502的至少一部分的水平一侧，所述逆导型绝缘栅双极型晶体管511的集电极和发射极与所述强电引脚110电连接，所述第二控制单元520与所述弱电引脚120电连接。由此，风机逆变器的结构设置有利于充分利用空间，提高高集成功率模块的集成度，且功率因数校正元件产生的热量对第二控制单元的影响较小，功 率器件的可靠性高。需要说明的是，水平指的是与左右方向平行的方向，垂直指的是与上下方向平行的方向。根据本申请的实施例，弱电引脚可以与第二控制单元中的IC供电、地线、逆导型绝缘栅双极型晶体管的栅极控制端以及故障输出端等电连接。
根据本申请的实施例，参照图1，所述第一控制单元420设置在所述垂直段502的至少一部分的水平一侧，且位于所述第二控制单元520的左侧。由此，PFC的高温对第一控制单元和第二控制单元的影响很小，有利于延长二者的使用寿命，使得其在较长的使用过程中均能保持较高的工作效率，且第一控制单元设置在第二控制单元的左侧有利于简化电路布线。
根据本申请的实施例，所述第一控制单元420和所述第二控制单元520位于所述垂直段502的同侧。由此，更有利于提高空间利用率，使得高集成功率模块的集成度更高。在本申请的一些实施例中，第一控制单元和第二控制单元均设置在垂直段的左侧。由此，节约空间的效果更佳，高集成功率模块的集成度更高，且PFC的高温对第一控制单元和第二控制单元的影响很小。
根据本申请的实施例，参照图2，电流通过整流桥300一部分通过引脚输出到外围电路(例如开关电源等)，另一部分流向功率因数校正元件200，然后电流通过功率因数校正元件200一部分流向第一器件单元410中IGBT模块411；另一部分流向第二器件单元510中逆导型绝缘栅双极型晶体管511。由此，电流由左至右流动，与功率器件的排布方向一致，有利于电路布线的简化。
根据本申请的另一些实施例，参照图3，该高集成功率模块包括：基板100；设置在所述基板100上的功率因数校正元件200、整流桥300、压缩机逆变器400以及风机逆变器500，其中，所述整流桥300设置在所述功率因数校正元件200的左侧，所述压缩机逆变器400设置在所述功率因数校正元件200的上侧，所述风机逆变器500设置在所述功率因数校正元件200的下侧；所述整流桥300与所述功率因数校正元件200电连接，所述功率因数校正元件200与所述压缩机逆变器400和所述风机逆变器500电连接。
根据本申请的实施例，参照图3，所述压缩机逆变器400包括间隔设置的第一器件单元410和第一控制单元420，所述第一器件单元410包括相互连接的第一水平段412和第二水平段413，所述第一水平段412设置在所述功率因数校正元件200的上侧，所述第二水平段413的至少一部分设置在所述功率因数校正元件200的右侧。由此，压缩机逆变器的结构有利于充分利用空间，减少高集成功率模块的占用面积，提高高集成功率模块的集成度，进而可以统一把控功率器件的可靠性，减小开发、维修难度。
根据本申请的实施例，参照图3，所述第一水平段412和第二水平段413各包括三个垂 直设置的IGBT模块411，每个所述IGBT模块411中包括一个绝缘栅双极型晶体管401和一个快恢复二极管402，其中，在所述第一水平段412中的每个所述IGBT模块411中，所述快恢复二极管402位于所述绝缘栅双极型晶体管401的上侧，在所述第二水平段413中的每个所述IGBT模块411中，所述快恢复二极管402位于所述绝缘栅双极型晶体管401的下侧，所述绝缘栅双极型晶体管401的集电极和发射极与所述强电引脚110电连接。由此，将绝缘栅双极型晶体管与快恢复二极管结合使用可以有效减少转换状态的损耗，且在不影响散热的前提下，快恢复二极管与绝缘栅双极型晶体管的排布方式有利于使得高集成功率模块中的各个功率器件的排布更紧凑，集成度更高，空间利用率更高，更有利于减小高集成功率模块的占用面积，更容易统一把控上述功率器件的可靠性，成本更低，且有利于线路优化。
根据本申请的实施例，参照图3，所述第一控制单元420设置在所述第二水平段413的上侧，且位于所述第一水平段412的至少一部分的水平一侧，所述第一控制单元420与所述弱电引脚120电连接。由此，由于流过第一器件单元的电流较小，将第一器件单元设置在功率因数校正元件和第一控制单元中间，不仅有利于PFC的散热，且可以减少PFC的高温对第一控制单元的影响，延长第一控制单元的使用寿命，且在较长的使用过程中均具有良好的控制第一器件单元的作用。
在本申请的一些实施例中，参照图3，所述第一控制单元420设置在所述第二水平段413的上侧，且位于所述第一水平段412的右侧。由此，PFC的高温对第一控制单元的影响更小，更有利于延长其使用寿命，使得其在较长的使用过程中均能保持较高的工作效率。
根据本申请的实施例，参照图3，所述风机逆变器500包括第二器件单元510和第二控制单元520，所述第二器件单元510包括六个逆导型绝缘栅双极型晶体管511，六个所述逆导型绝缘栅双极型晶体管511中的一部分所述逆导型绝缘栅双极型晶体管511沿水平方向呈直线间隔分布，以形成第三水平段501，六个所述逆导型绝缘栅双极型晶体管511中的另一部分所述逆导型绝缘栅双极型晶体管511沿垂直方向呈直线间隔分布，以形成垂直段502，所述垂直段502设置在所述第三水平段501的上侧，其中，所述第二控制单元520设置在所述垂直段502的至少一部分的水平一侧，所述逆导型绝缘栅双极型晶体管511的集电极和发射极与所述强电引脚110电连接，所述第二控制单元520与所述弱电引脚120电连接。由此，由此，风机逆变器的结构设置有利于充分利用空间，提高高集成功率模块的集成度，且功率因数校正元件产生的热量对第二控制单元的影响较小，功率器件的可靠性高，且风机逆变器产生的热量较少，将其设置在基板的边缘有利于节省空间。根据本申请的实施例，弱电引脚可以与第二控制单元中的驱动信号控制端、过流保护、过温保护和故障输出引脚 等电连接。
在本申请的一些实施例中，参照图3，所述第二控制单元520设置在所述垂直段502的右侧。由此，PFC的高温对第二控制单元的影响更小，更有利于延长其使用寿命，使得其在较长的使用过程中均能保持较高的工作效率，且更有利于简化电路布线。
根据本申请的实施例，参照图4，电流通过整流桥300一部分通过引脚输出到外围电路(例如开关电源等)，另一部分流向功率因数校正元件200，然后电流通过功率因数校正元件200一部分流向压缩机逆变器IGBT，另一部分流向风机逆变器IGBT，第一控制单元420控制第一器件单元410中IGBT模块411的开或者关以改变压缩机转动频率；第二控制单元520控制第二器件单元510中逆导型绝缘栅双极型晶体管511的开或者关以控制风机转动频率。由此，电流从左向右的方向上流动，与功率器件的排布方向一致，有利于电路布线的简化。
根据本申请的又一些实施例，参照图5，该高集成功率模块包括：基板100；设置在基板100上的整流桥300、功率因数校正元件200、压缩机逆变器400和风机逆变器500；其中，整流桥300设置在功率因数校正元件200的上侧，压缩机逆变器400设置在功率因数校正元件200的下侧，风机逆变器500设置在压缩机逆变器400的下侧；整流桥300与功率因数校正元件200电连接，功率因数校正元件200分别与压缩机逆变器400和风机逆变器500电连接。
根据本申请的实施例，参照图5，压缩机逆变器400包括间隔设置的第一器件单元410和第一控制单元420，所述第一控制单元420设置在所述第一器件单元410的下侧。由此，由于流过第一器件单元410的电流较小，将第一器件单元410设置在功率因数校正元件200和第一控制单元420中间，不仅有利于PFC的散热，且可以减少PFC的高温对第一控制单元420的影响，延长第一控制单元420的使用寿命，且在较长的使用过程中均具有良好的控制第一器件单元的作用。
根据本申请的实施例，参照图5，第一器件单元410包括六个IGBT模块411，每个IGBT模块411中包括一个绝缘栅双极型晶体管(IGBT)401和一个快恢复二极管402，其中，至少一个所述IGBT模块411垂直设置，且垂直设置的IGBT模块411的至少一部分设置在功率因数校正元件200中的两个子元件之间。由此，在不影响散热的前提下，第一器件单元410与PFC的排布更加紧凑，进而使得高集成功率模块中的各个功率器件的排布更紧凑，集成度更高，空间利用率更高，减小高集成功率模块的占用面积，更容易统一把控上述功率器件的可靠性，成本更低。
根据本申请的实施例，参照图5，四个IGBT模块411垂直设置，垂直设置的IGBT模 块中的绝缘栅双极型晶体管401位于快恢复二极管402的下侧，且其中一个垂直设置的IGBT模块411中的快恢复二极管402的至少一部分设置在功率因数校正元件200中的两个子元件之间；两个IGBT模块411水平设置，且水平设置的IGBT模块411中快恢复二极管402位于绝缘栅双极型晶体管401的右侧。由此，将绝缘栅双极型晶体管401与快恢复二极管402结合使用可以有效减少转换状态的损耗，且在不影响散热的前提下，将快恢复二极管402的至少一部分位于设置在功率因数校正元件200中的两个子元件之间有利于使得高集成功率模块中的各个功率器件的排布更紧凑，集成度更高，空间利用率更高，更有利于减小高集成功率模块的占用面积，更容易统一把控上述功率器件的可靠性，成本更低。
根据本申请的实施例，上述“其中一个垂直设置的IGBT模块411中的快恢复二极管402的至少一部分设置在功率因数校正元件200中的两个子元件之间”中的“两个子元件”的具体种类没有限制要求，具体地：参照图5，其中一个垂直设置的IGBT模块411中的快恢复二极管402的至少一部分设置在功率因数校正元件200中的第二二极管210和功率因数校正元件的快恢复二极管230之间；若图5中的功率因数校正元件的快恢复二极管230和功率因数校正元件的绝缘栅双极型晶体管220互换位置，则其中一个垂直设置的IGBT模块411中的快恢复二极管402的至少一部分设置在功率因数校正元件200中的第二二极管210和功率因数校正元件的绝缘栅双极型晶体管220之间。
根据本申请的实施例，参照图5，风机逆变器500包括间隔设置的第二器件单元510和第二控制单元520，第二器件单元510包括六个逆导型绝缘栅双极型晶体管(RC-IGBT)511，六个逆导型绝缘栅双极型晶体管511中的一部分逆导型绝缘栅双极型晶体管511沿水平方向呈直线间隔分布，以形成第三水平段501，六个逆导型绝缘栅双极型晶体管511中的另一部分逆导型绝缘栅双极型晶体管511沿垂直方向呈直线间隔分布，以形成垂直段502，垂直段502设置在第三水平段501的上侧，其中，第二控制单元520设置在第三水平段501的上侧，且位于垂直段502的至少一部分的水平一侧。由此，风机逆变器的结构设置有利于充分利用空间，提高高集成功率模块的集成度，且功率因数校正元件产生的热量对第二控制单元的影响较小，功率器件的可靠性高。
根据本申请的实施例，参照图5，第一控制单元420设置在垂直段502的至少一部分的水平一侧，且位于第二控制单元520的上侧。由此，PFC的高温对第一控制单元420和第二控制单元520的影响很小，有利于延长二者的使用寿命，使得其在较长的使用过程中均能保持较高的工作效率，且第一控制单元设置在第二控制单元的上侧有利于简化电路布线。
根据本申请的实施例，参照图5，第一控制单元420和第二控制单元520位于垂直段502的同侧。由此，进一步提高空间利用率，使得高集成功率模块的集成度更高，且不影响散 热。在本申请的一些实施例中，第一控制单元420和第二控制单元520均设置在垂直段502的右侧。由此，节约空间的效果更佳，高集成功率模块的集成度更高，且PFC的高温对第一控制单元和第二控制单元的影响很小。
根据本申请的实施例，参照图5和图6，电流通过整流桥300一部分通过引脚输出到外围电路(例如开关、电源等)，另一部分流向功率因数校正元件200，然后电流通过功率因数校正元件200一部分流向第一器件单元410中IGBT模块411，另一部分流向第二器件单元510中逆导型绝缘栅双极型晶体管511。由此，电流从高集成功率模块的左侧向右侧的方向上流动，与功率器件的排布方向一致，有利于电路布线的简化。
根据本申请的另一些实施例，参照图7，该高集成功率模块包括：基板100；设置在基板100上的风机逆变器500、整流桥300、功率因数校正元件200和压缩机逆变器400；其中，整流桥300设置在功率因数校正元件200的左侧，压缩机逆变器400设置在功率因数校正元件200的右侧，风机逆变器500设置在整流桥300的左侧；整流桥300与功率因数校正元件200电连接，功率因数校正元件200分别与压缩机逆变器400和风机逆变器500电连接。
根据本申请的实施例，参照图7，压缩机逆变器400包括间隔设置的第一器件单元410和第一控制单元420，第一控制单元420设置在第一器件410单元靠近右侧的边缘的下侧。由此，由于流过第一器件单元410的电流较小，将第一控制单元420设置在第一器件单元410靠近右侧的边缘的下侧，不仅有利于PFC的散热，且可以减少PFC的高温对第一控制单元420的影响，最大程度的降低对第一控制单元420的干扰，进而延长第一控制单元420的使用寿命，且在较长的使用过程中均具有良好的控制第一器件单元410的作用。
根据本申请的实施例，参照图7，第一器件单元410包括六个IGBT模块411，每个IGBT模块411中包括一个绝缘栅双极型晶体管(IGBT)401和一个快恢复二极管402，其中，至少一个IGBT模块411水平设置，且水平设置的IGBT模块411的至少一部分设置在功率因数校正元件200中的两个子元件之间。由此，在不影响散热的前提下，第一器件单元410与PFC的排布更加紧凑，进而使得高集成功率模块中的各个功率器件的排布更紧凑，集成度更高，空间利用率更高，减小高集成功率模块的占用面积，更容易统一把控上述功率器件的可靠性，成本更低。
根据本申请的实施例，参照图7，一个IGBT模块411水平设置，水平设置的IGBT模块411中的绝缘栅双极型晶体管401位于快恢复二极管402的右侧，且水平设置的IGBT模块中的快恢复二极管402的至少一部分设置在功率因数校正元件200中的两个子元件之间；五个IGBT模块411垂直设置，且每个垂直设置的IGBT模块411中的快恢复二极管402位 于绝缘栅双极型晶体管401的上侧。由此，将绝缘栅双极型晶体管401与快恢复二极管402结合使用可以有效减少转换状态的损耗，且在不影响散热的前提下，将快恢复二极管402的至少一部分位于设置在功率因数校正元件200中的两个子元件之间有利于使得高集成功率模块中的各个功率器件的排布更紧凑，集成度更高，空间利用率更高，更有利于减小高集成功率模块的占用面积，更容易统一把控上述功率器件的可靠性，成本更低。
根据本申请的实施例，上述“其中一个垂直设置的IGBT模块411中的快恢复二极管402的至少一部分设置在功率因数校正元件200中的两个子元件之间”中的“两个子元件”的具体种类没有限制要求，具体地：参照图7，其中一个垂直设置的IGBT模块411中的快恢复二极管402的至少一部分设置在功率因数校正元件200中的第二二极管210和功率因数校正元件的绝缘栅双极型晶体管220之间；若图7中的功率因数校正元件的快恢复二极管230和功率因数校正元件的绝缘栅双极型晶体管220互换位置，则其中一个垂直设置的IGBT模块411中的快恢复二极管402的至少一部分设置在功率因数校正元件200中的第二二极管210和功率因数校正元件的快恢复二极管230之间。
根据本申请的实施例，参照图7，风机逆变器500包括间隔设置的第二器件单元510和第二控制单元520，第二器件单元510包括六个逆导型绝缘栅双极型晶体管(RC-IGBT)511，六个逆导型绝缘栅双极型晶体管511中的一部分逆导型绝缘栅双极型晶体管511沿水平方向呈直线间隔分布，以形成第三水平段501，六个逆导型绝缘栅双极型晶体管511中的另一部分逆导型绝缘栅双极型晶体管511沿垂直方向呈直线间隔分布，以形成垂直段502，垂直段502设置在第三水平段501的右侧，其中，第二控制单元520设置在垂直段502的左侧，且位于第三水平段501的至少一部分的垂直方向的一侧。由此，风机逆变器500的结构设置有利于充分利用空间，提高高集成功率模块的集成度，且将第二控制单元520设置在最边缘，可以最大程度的降低PFC对第二控制单元的干扰，进而延长第二控制单元520的使用寿命，且在较长的使用过程中均具有良好的控制第二器件单元的作用。
根据本申请的实施例，参照图7，第二控制单元520设置在第三水平段501的至少一部分的正对的上侧，且在垂直段502的至少一部分的正对的左侧。由此，不仅可以进一步提高空间利用率，使得高集成功率模块的集成度更高，且不影响散热，再者，将第二控制单元520设置在最边缘，可以最大程度的降低PFC对第二控制单元的干扰。
根据本申请的实施例，参照图8，第二控制单元520设置在第三水平段501的至少一部分的正对的下侧，且在垂直段502的至少一部分的正对的左侧。由此，不仅可以进一步提高空间利用率，使得高集成功率模块的集成度更高，且不影响散热，再者，将第二控制单元520设置在最边缘，可以最大程度的降低PFC对第二控制单元的干扰。
根据本申请的实施例，参照图2图4、图6和图9，高集成功率模块还包括：强电引脚110，强电引脚110设置在基板100的第一边缘上；弱电引脚120，弱电引脚120设置在基板100的第二边缘上。由此，可以有效驱动上述功率器件，且可以及时有效的传递功率器件中的产生的信号，使得高集成功率模块高效的运转。根据本申请的实施例，强电引脚与整流桥的输入端、整流桥的输出端、功率因数校正元件的输出端、压缩机逆变器绝缘栅双极型晶体管的集电极和发射极、风机逆变器逆导型绝缘栅双极型晶体管的集电极和发射极电连接；弱电引脚与压缩机的第一控制单元和风机的第二控制单元电连接。由此，电路布线较为简单，且电流流程较短，有利于降低热量的产生，降低高集成功率模块中的温度，进而有利于提高功率器件的良率、工作效率，延长其使用寿命。根据本申请的实施例，弱电引脚还可以与第二控制单元中的驱动信号控制端、过流保护、过温保护和故障输出引脚等电连接。
根据本申请的实施例，参照图7至图9，电流通过整流桥300一部分通过引脚输出到外围电路(例如开关、电源等)，另一部分流向功率因数校正元件200，然后电流通过功率因数校正元件200一部分流向第一器件单元410中IGBT模块411，另一部分流向第二器件单元510中逆导型绝缘栅双极型晶体管511。由此，电流从高集成功率模块的左侧向右侧的方向上流动，与功率器件的排布方向一致，有利于电路布线的简化。
根据本申请的实施例，形成基板100的材料包括铝、陶瓷等高导热材料，由此，有利于导出功率器件(包括功率因数校正元件200、整流桥300、压缩机逆变器400以及风机逆变器500)产生的热量，提高散热效率。根据本申请的实施例，在基板100与功率器件之间还设置有绝缘层、铜箔走线、绿油层、器件焊盘等，由此，可以保证功率器件正常工作。
根据本申请的实施例，参照图1至图9，整流桥300中包括四个间隔设置的第一二极管310，整流桥300可以有效将交流电转换为直流电，以满足后续功率器件的需求。根据本申请的实施例，形成第一二极管310的材料包括半导体锗或硅等，由此，二极管的使用性能良好。
根据本申请的实施例，参照图1至图9，功率因数校正元件200包括从上侧到下侧的方向上依次间隔设置的第二二极管210、功率因数校正元件的绝缘栅双极型晶体管220以及功率因数校正元件的快恢复二极管230三个子元件。由此，可以有效减少功率因数校正元件的占用面积，且其工作效率较高。
根据本申请的实施例，第一控制单元可以为高压集成电路(HVIC)，该高压集成电路控制第一器件单元中的六个IGBT模块以及功率因数校正元件的绝缘栅双极型晶体管220。具体的，将第一器件单元中的六个IGBT模块中的任意三个设置为上桥臂IGBT模块，另外三 个设置为下桥臂IGBT模块，高压集成电路通过对上桥臂IGBT模块和下桥臂IGBT模块的控制实现压缩机转动频率的调整。由此，工作效率较高，功耗较低。
根据本申请的实施例，第二控制单元可以为高压集成电路(HVIC)，该高压集成电路控制第二控制单元中的六个逆导型绝缘栅双极型晶体管，具体的，将逆导型绝缘栅双极型晶体管中的任意三个设置为上桥臂逆导型绝缘栅双极型晶体管，另外三个设置为下桥臂逆导型绝缘栅双极型晶体管，高压集成电路通过对上桥臂逆导型绝缘栅双极型晶体管和下桥臂逆导型绝缘栅双极型晶体管的控制实现风机转动频率的调整。由此，工作效率较高，功耗较低。
根据本申请的实施例，高集成功率模块还包括连接导线、电阻元件和电容元件中的至少一种，所述连接导线、所述电阻元件和所述电容元件设置在所述基板上的空余区域。由此，可以充分利用空余区域的空间，提高高集成功率模块的集成度、可靠性，降低成本，减小了电控体积。需要说明的是，空余区域指的是没有被功率器件覆盖的区域。
根据本申请的实施例，将功率器件、连接导线、电阻元件和电容元件按照上述的排布方式安装结束之后，用同一个外壳进行封装，即可获得集成度高、占用面积小、散热效率高的高集成功率模块，可以统一把控功率器件的可靠性，开发、维修难度小，成本低。
在本申请的另一方面，本申请提供了一种电器。根据本申请的实施例，该电器包括权前面所述的高集成功率模块。发明人发现，该电器的散热效果较佳，使用寿命较长，在较长使用过程中均能保持较佳的使用性能，成本较低。
根据本申请的实施例，上述电器可以为空调器，且该空调器除了包括前面所述的高集成功率模块之外还可以包括风机、压缩机、换热器、节流组件、导风部件、底盘、面板等常规空调所必备的结构或部件，在此不再过多赘述。根据本申请的实施例，空调器的种类可以为挂式、柜式等。
在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”“内”、“外”、“顺时针”、“逆时针”、“轴向”、“径向”、“周向”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
在本申请中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元 件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
在本申请中，除非另有明确的规定和限定，第一特征在第二特征“上”或“下”可以是第一和第二特征直接接触，或第一和第二特征通过中间媒介间接接触。而且，第一特征在第二特征“之上”、“上方”和“上面”可是第一特征在第二特征正上方或斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”可以是第一特征在第二特征正下方或斜下方，或仅仅表示第一特征水平高度小于第二特征。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本申请的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
尽管上面已经示出和描述了本申请的实施例，可以理解的是，上述实施例是示例性的，不能理解为对本申请的限制，本领域的普通技术人员在本申请的范围内可以对上述实施例进行变化、修改、替换和变型。

Claims (31)

  1. 一种高集成功率模块，其特征在于，包括：
    基板；
    设置在所述基板上的功率因数校正元件、整流桥、压缩机逆变器以及风机逆变器，
    其中，所述整流桥设置在所述功率因数校正元件的第一侧，所述压缩机逆变器设置在所述功率因数校正元件的第二侧，所述风机逆变器设置在所述压缩机逆变器的第三侧；
    所述整流桥与所述功率因数校正元件电连接，所述功率因数校正元件与所述压缩机逆变器和所述风机逆变器电连接。
  2. 根据权利要求1所述的高集成功率模块，其特征在于，所述整流桥设置在所述功率因数校正元件的左侧，所述压缩机逆变器设置在所述功率因数校正元件的右侧，所述风机逆变器设置在所述压缩机逆变器的右侧。
  3. 根据权利要求1所述的高集成功率模块，其特征在于，所述整流桥设置在所述功率因数校正元件的左侧，所述压缩机逆变器设置在所述功率因数校正元件的上侧，所述风机逆变器设置在所述压缩机逆变器的下侧。
  4. 根据权利要求1所述的高集成功率模块，其特征在于，所述整流桥设置在所述功率因数校正元件的上侧，所述压缩机逆变器设置在所述功率因数校正元件的下侧，所述风机逆变器设置在所述压缩机逆变器的下侧。
  5. 根据权利要求1所述的高集成功率模块，其特征在于，所述整流桥设置在所述功率因数校正元件的左侧，所述压缩机逆变器设置在所述功率因数校正元件的右侧，所述风机逆变器设置在所述压缩机逆变器的左侧。
  6. 根据权利要求2所述的高集成功率模块，其特征在于，所述压缩机逆变器包括间隔设置的第一器件单元和第一控制单元，所述第一控制单元设置在所述第一器件单元的右侧。
  7. 根据权利要求5所述的高集成功率模块，其特征在于，所述压缩机逆变器包括间隔设置的第一器件单元和第一控制单元，所述第一控制单元设置在所述第一器件单元的下侧。
  8. 根据权利要求6或7所述的高集成功率模块，其特征在于，所述第一器件单元包括六个IGBT模块，每个所述IGBT模块中包括一个绝缘栅双极型晶体管和一个快恢复二极管，其中，至少一个所述IGBT模块水平设置，且水平设置的所述IGBT模块的至少一部分设置在所述功率因数校正元件中的两个子元件之间。
  9. 根据权利要求8所述的高集成功率模块，其特征在于，一个所述IGBT模块水平设置，且水平设置的所述IGBT模块中的所述快恢复二极管的至少一部分设置在所述功率因数校正元件中的两个所述子元件之间；
    五个所述IGBT模块垂直设置，且每个垂直设置的所述IGBT模块中所述快恢复二极管位于所述绝缘栅双极型晶体管的上方。
  10. 根据权利要求8或9所述的高集成功率模块，其特征在于，水平设置的所述IGBT模块中的所述绝缘栅双极型晶体管位于水平设置的所述IGBT模块中的所述快恢复二极管的右侧。
  11. 根据权利要求3所述的高集成功率模块，其特征在于，所述压缩机逆变器包括间隔设置的第一器件单元和第一控制单元，所述第一器件单元包括第一水平段和第二水平段，所述第一水平段设置在所述功率因数校正元件的上侧，所述第二水平段的至少一部分设置在所述功率因数校正元件的右侧。
  12. 根据权利要求11所述的高集成功率模块，其特征在于，所述第一控制单元设置在所述第二水平段的上侧，且位于所述第一水平段的至少一部分的水平一侧。
  13. 根据权利要求11或12所述的高集成功率模块，其特征在于，所述第一水平段和第二水平段各包括三个垂直设置的IGBT模块，每个所述IGBT模块中包括一个绝缘栅双极型晶体管和一个快恢复二极管，
    其中，在所述第一水平段中的每个所述IGBT模块中，所述快恢复二极管位于所述绝缘栅双极型晶体管的上侧，
    在所述第二水平段中的每个所述IGBT模块中，所述快恢复二极管位于所述绝缘栅双极型晶体管的下侧。
  14. 根据权利要求4所述的高集成功率模块，其特征在于，所述压缩机逆变器包括间隔设置的第一器件单元和第一控制单元，所述第一控制单元设置在所述第一器件单元的下侧。
  15. 根据权利要求14所述的高集成功率模块，其特征在于，所述第一器件单元包括六个IGBT模块，每个所述IGBT模块中包括一个绝缘栅双极型晶体管和一个快恢复二极管，
    其中，至少一个所述IGBT模块垂直设置，且垂直设置的所述IGBT模块的至少一部分设置在所述功率因数校正元件中的两个子元件之间。
  16. 根据权利要求15所述的高集成功率模块，其特征在于，四个所述IGBT模块垂直设置，每个垂直设置的所述IGBT模块中的所述绝缘栅双极型晶体管位于所述快恢复二极管的下侧，且其中一个垂直设置的所述IGBT模块中的所述快恢复二极管的至少一部分设置在所述功率因数校正元件中的两个所述子元件之间；
    两个所述IGBT模块水平设置，且每个水平设置的所述IGBT模块中所述快恢复二极管位于所述绝缘栅双极型晶体管的右侧。
  17. 根据权利要求2、6、8-10中任一项所述的高集成功率模块，其特征在于，所述风 机逆变器包括间隔设置的第二器件单元和第二控制单元，所述第二器件单元包括六个逆导型绝缘栅双极型晶体管，六个所述逆导型绝缘栅双极型晶体管中的一部分所述逆导型绝缘栅双极型晶体管沿水平方向呈直线间隔分布，以形成水平段，六个所述逆导型绝缘栅双极型晶体管中的另一部分所述逆导型绝缘栅双极型晶体管沿垂直方向呈直线间隔分布，以形成垂直段，所述垂直段设置在所述水平段的上方，
    其中，所述第二控制单元设置在所述水平段的上方，且位于所述垂直段的至少一部分的水平一侧。
  18. 根据权利要求17所述的高集成功率模块，其特征在于，所述第一控制单元设置在所述垂直段的至少一部分的水平一侧，且位于所述第二控制单元的左侧。
  19. 根据权利要求17或18所述的高集成功率模块，其特征在于，所述第一控制单元和所述第二控制单元位于所述垂直段的同侧。
  20. 根据权利要求3、11-13中任一项所述的高集成功率模块，其特征在于，所述风机逆变器包括第二器件单元和第二控制单元，所述第二器件单元包括六个逆导型绝缘栅双极型晶体管，六个所述逆导型绝缘栅双极型晶体管中的一部分所述逆导型绝缘栅双极型晶体管沿水平方向呈直线间隔分布，以形成第三水平段，六个所述逆导型绝缘栅双极型晶体管中的另一部分所述逆导型绝缘栅双极型晶体管沿垂直方向呈直线间隔分布，以形成垂直段，所述垂直段设置在所述第三水平段的上侧，
    其中，所述第二控制单元设置在所述垂直段的至少一部分的水平一侧。
  21. 根据权利要求20所述的高集成功率模块，其特征在于，所述第二控制单元设置在所述垂直段的右侧。
  22. 根据权利要求20或21所述的高集成功率模块，其特征在于，所述第一控制单元设置在所述第二水平段的上侧，且位于所述第一水平段的右侧。
  23. 根据权利要求4、14-16中任一项所述的高集成功率模块，其特征在于，所述风机逆变器包括间隔设置的第二器件单元和第二控制单元，所述第二器件单元包括六个逆导型绝缘栅双极型晶体管，六个所述逆导型绝缘栅双极型晶体管中的一部分所述逆导型绝缘栅双极型晶体管沿水平方向呈直线间隔分布，以形成水平段，六个所述逆导型绝缘栅双极型晶体管中的另一部分所述逆导型绝缘栅双极型晶体管沿垂直方向呈直线间隔分布，以形成垂直段，所述垂直段设置在所述水平段的上侧，
    其中，所述第二控制单元设置在所述水平段的上侧，且位于所述垂直段的至少一部分的水平一侧。
  24. 根据权利要求23所述的高集成功率模块，其特征在于，所述第一控制单元设置在 所述垂直段的至少一部分的水平一侧，且位于所述第二控制单元的上侧。
  25. 根据权利要求23或24所述的高集成功率模块，其特征在于，所述第一控制单元和所述第二控制单元位于所述垂直段的同侧。
  26. 根据权利要求5、7-10中任一项所述的高集成功率模块，其特征在于，所述风机逆变器包括间隔设置的第二器件单元和第二控制单元，所述第二器件单元包括六个逆导型绝缘栅双极型晶体管，六个所述逆导型绝缘栅双极型晶体管中的一部分所述逆导型绝缘栅双极型晶体管沿水平方向呈直线间隔分布，以形成水平段，六个所述逆导型绝缘栅双极型晶体管中的另一部分所述逆导型绝缘栅双极型晶体管沿垂直方向呈直线间隔分布，以形成垂直段，所述垂直段设置在所述水平段的右侧，
    其中，所述第二控制单元设置在所述垂直段的左侧，且位于所述水平段的至少一部分的垂直方向的一侧。
  27. 根据权利要求26所述的高集成功率模块，其特征在于，所述第二控制单元设置在所述水平段的至少一部分的正对的上侧。
  28. 根据权利要求26或27所述的高集成功率模块，其特征在于，所述第二控制单元设置在所述水平段的至少一部分的正对的下侧，且在所述垂直段的至少一部分的正对的左侧。
  29. 根据权利要求17-28中任一项所述的高集成功率模块，其特征在于，还包括：
    强电引脚，所述强电引脚设置在所述基板的第一边缘上，所述强电引脚分别与所述整流桥的输入端、所述整流桥的输出端、所述功率因数校正元件的输出端、所述压缩机逆变器的所述绝缘栅双极型晶体管的集电极和发射极、所述风机逆变器的所述逆导型绝缘栅双极型晶体管的集电极和发射极电连接；
    弱电引脚，所述弱电引脚设置在所述基板的第二边缘上，所述弱电引脚分别与所述第一控制单元和所述第二控制单元电连接。
  30. 根据权利要求1-29中任一项所述的高集成功率模块，其特征在于，还包括连接导线、电阻元件和电容元件中的至少一种，所述连接导线、所述电阻元件和所述电容元件设置在所述基板上的空余区域。
  31. 一种空调器，其特征在于，包括权利要求1～30中任一项所述的高集成功率模块。
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