WO2016148217A1 - 配線基板 - Google Patents

配線基板 Download PDF

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Publication number
WO2016148217A1
WO2016148217A1 PCT/JP2016/058424 JP2016058424W WO2016148217A1 WO 2016148217 A1 WO2016148217 A1 WO 2016148217A1 JP 2016058424 W JP2016058424 W JP 2016058424W WO 2016148217 A1 WO2016148217 A1 WO 2016148217A1
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WIPO (PCT)
Prior art keywords
mass
terms
insulating substrate
wiring layer
wiring board
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PCT/JP2016/058424
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English (en)
French (fr)
Japanese (ja)
Inventor
梅田勇治
伊藤陽彦
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日本碍子株式会社
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Application filed by 日本碍子株式会社 filed Critical 日本碍子株式会社
Priority to CN201680016103.4A priority Critical patent/CN107409472B/zh
Priority to JP2017506599A priority patent/JP6609622B2/ja
Publication of WO2016148217A1 publication Critical patent/WO2016148217A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
    • C04B35/111—Fine ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits

Definitions

  • the present invention relates to a wiring board, for example, a wiring board suitable for use in a ceramic package, a high-frequency circuit board, or the like in which elements such as vibrators are mounted.
  • a wiring board having an insulating substrate made of ceramic such as alumina As a conventional wiring board, for example, a wiring board having an insulating substrate made of ceramic such as alumina, the wiring board described in, for example, Japanese Patent No. 3827447, Japanese Patent No. 3493310, Japanese Patent No. 3537698, and Japanese Patent No. 3898400 It has been known.
  • Japanese Patent No. 3827447 discloses an insulating substrate formed by laminating a plurality of insulating layers made of aluminum oxide ceramics having an average crystal grain size of a main crystal phase of 1.5 to 5.0 ⁇ m, and disposed inside the insulating substrate. There is described a wiring board having an internal wiring layer and a surface wiring layer disposed on the surface of the insulating substrate.
  • the copper diffusion distance to the ceramic around the internal wiring layer is 20 ⁇ m or less
  • the surface roughness (Ra) of the substrate surface on which the surface wiring layer of the insulating substrate is formed is 1 ⁇ m or less. It consists of the skin surface.
  • Japanese Patent No. 3493310 discloses a wiring board comprising a ceramic insulating substrate, and a surface wiring layer and an internal wiring layer formed on the inside and the surface of the insulating substrate by simultaneous firing with the insulating substrate.
  • the surface wiring layer contains 10 to 70% by volume of copper and 30 to 90% by volume of tungsten and / or molybdenum, and a metal layer is coated on the surface of the surface wiring layer by a plating method. It is formed by wearing.
  • the internal wiring layer contains 20 to 80% by volume of copper and 20 to 80% by volume of tungsten and / or molybdenum.
  • the sheet resistance of the surface wiring layer on which the internal wiring layer and the metal layer are deposited is 6 m ⁇ / sq. It is as follows.
  • Japanese Patent No. 3537698 discloses an insulating substrate made of a ceramic having a relative density of 95% or more, containing aluminum as a main component and containing a manganese compound in a ratio of 2.0 to 10.0% by weight in terms of MnO 2 , A wiring substrate having a surface wiring layer on at least the surface of an insulating substrate is described.
  • the surface wiring layer is formed by co-firing with an insulating substrate and contains 10 to 70% by volume of copper and 30 to 90% by volume of tungsten and / or molybdenum, and in a matrix made of copper. Tungsten and / or molybdenum is dispersed and contained as particles having an average particle diameter of 1 to 10 ⁇ m.
  • an insulating substrate made of ceramics mainly composed of alumina is 10 to 70% by volume of Cu (copper) melted during firing, tungsten (W) particles and / or molybdenum (Mo )
  • a wiring board on which a metallized wiring layer containing particles in a proportion of 30 to 90% by volume is deposited is described.
  • Cu and tungsten particles and / or molybdenum particles in the metallized wiring layer are not separated, and the surface of the metallized wiring layer has a surface roughness (Ra) of 2.5 to 4.5 ⁇ m. It has become.
  • the present invention has been made in consideration of such problems, and provides a wiring board that can be produced at a low firing temperature and that can improve the adhesion of the wiring layer to the insulating board. Objective.
  • a wiring board according to the present invention is a wiring board having an insulating substrate, a surface wiring layer disposed on a surface of the insulating substrate, and an internal wiring layer disposed inside the insulating substrate.
  • the insulating substrate has a crystal phase of at least Al 2 O 3 or a compound containing Al 2 O 3 as a main crystal phase, the crystal grain size of the Al 2 O 3 is less than 1.5 ⁇ m, and the surface wiring
  • the layer and the internal wiring layer include copper and tungsten, copper and molybdenum, or copper, tungsten, and molybdenum, and the grain size of the tungsten and molybdenum is less than 1.0 ⁇ m, and the surface wiring layer and the surface of the internal wiring layer
  • the roughness Ra is less than 2.5 ⁇ m.
  • the surface roughness Ra is more preferably 2.0 ⁇ m or less.
  • At least the surface wiring layer has an adhesive strength of 2 kg or more with the insulating substrate.
  • the insulating substrate is preferably a sintered body.
  • the sintering is preferably performed at a temperature of 1200 to 1350 ° C.
  • the temperature is preferably 1200 to 1300 ° C.
  • the insulating substrate may include only a BaAl 2 Si 2 O 8 crystal phase in addition to the main crystal phase.
  • the insulating substrate is composed of 89.0 to 92.0 mass% of Al in terms of Al 2 O 3 , 2.0 to 5.0 mass% of Si in terms of SiO 2 , and Mn in terms of MnO. It is preferable to contain 2.0 to 5.0 mass%, Mg is 0 to 2.0 mass% in terms of MgO, and Ba is 0.05 to 2.0 mass% in terms of BaO.
  • the insulating substrate may have Al 2 O 3 and ZrO 2 as a main crystal phase, and Mn 3 Al 2 (SiO 4 ) 3 or MgAl 2 O 4 in addition to the main crystal phase. .
  • the insulating substrate may have a crystal phase of 3Al 2 O 3 .2SiO 2 as a main crystal phase and Al 2 O 3 and ZrO 2 in addition.
  • Al is 40.0 to 70.0% by mass in terms of Al 2 O 3
  • Zr is 5.0 to 40.0% by mass in terms of ZrO 2
  • Si is 10.0 to in terms of SiO 2 It is preferable that 30.0% by mass and Mn is contained in an amount of 2.0 to 8.0% by mass in terms of MnO.
  • Ba is contained when the total of Al 2 O 3 , ZrO 2 , SiO 2 and MnO is 100 mass%, including at least one element of Ba, Ti, Y, Ca and Mg. If includes 1.5 mass% or less in terms of BaO, if it contains Ti, wherein 1.5 wt% or less in terms of TiO 2, if it contains Y, more than 1.5 wt% in terms of Y 2 O 3 If it contains Ca, it may contain 1.5 mass% or less in terms of CaO, and if it contains Mg, it may contain 1.5 mass% or less in terms of MgO.
  • the wiring board according to the present invention can be manufactured at a low firing temperature, and the adhesion of the wiring layer to the insulating substrate can be improved.
  • FIG. 1 is a cross-sectional view showing a ceramic package having a wiring board according to the present embodiment.
  • FIG. 2 is a process block diagram showing a method for manufacturing a ceramic package.
  • ⁇ indicating a numerical range is used as a meaning including numerical values described before and after the numerical value as a lower limit value and an upper limit value.
  • the ceramic package 10 is configured by laminating a wiring board 12 according to the present embodiment, a frame body 14, and a lid body 16 in this order.
  • the wiring substrate 12 includes an insulating substrate 18, an upper surface wiring layer 20 formed on the upper surface of the insulating substrate 18, a lower surface wiring layer 22 formed on the lower surface of the insulating substrate 18, and an internal formed inside the insulating substrate 18.
  • a crystal resonator 30 is electrically connected to the upper surface wiring layer 20 via a conductor layer 32 in a housing space 28 surrounded by the upper surface of the insulating substrate 18 and the frame body 14. Further, in order to protect the crystal unit 30, the lid body 16 is hermetically sealed on the upper surface of the frame body 14 via the glass layer 34.
  • the crystal resonator 30 is mounted in the accommodation space 28 in the ceramic package 10 described above.
  • at least one of a resistor, a filter, a capacitor, and a semiconductor element may be mounted. .
  • the insulating substrate 18, the frame body 14, and the lid body 16 constituting the ceramic package 10 are made of the same ceramic substrate.
  • the ceramic substrate constituting the insulating substrate 18 and the like includes Al 2 O 3 as a main crystal phase and includes only a BaAl 2 Si 2 O 8 crystal phase.
  • Al is 89.0 to 92.0 mass% in terms of Al 2 O 3
  • Si is 2.0 to 5.0 mass% in terms of SiO 2
  • Mn is 2.0 to 5 mass in terms of MnO. It is preferable to contain 0% by mass, 0 to 2.0% by mass of Mg in terms of MgO, and 0.05 to 2.0% by mass of Ba in terms of BaO.
  • the insulating substrate 18 or the like is composed of 89.0 to 92.0% by mass of Al 2 O 3 powder, 2.0 to 5.0% by mass of SiO 2 powder, and 3.2 to 8.1% by mass of MnCO 3 powder ( 2.0 to 5.0 mass% in terms of MnO), 0 to 2.0 mass% in MgO powder, 0.06 to 2.6 mass% in BaCO 3 powder (0.05 to 2.0 mass in terms of BaO) %)), And then the molded body is fired at 1200 to 1350 ° C. (preferably 1200 to 1300 ° C.).
  • the average particle size of the raw material is 0.3 to 2.5 ⁇ m
  • the crystal grain size of Al 2 O 3 when formed into a sintered body is It is preferably 0.3 to 1.5 ⁇ m.
  • the crystal grain size of Al 2 O 3 is more preferably 0.5 to 1.0 ⁇ m.
  • the average particle size of the raw material is the integrated amount of passage from the small particle size side (integrated passage fraction) in the volume-based particle size distribution obtained by measuring by the laser diffraction scattering type particle size distribution measurement method (LA-920, manufactured by HORIBA). ) 50% particle size.
  • the crystal grain size when the sintered body was obtained was determined as follows. That is, when the surface of the sintered body was imaged with a scanning electron microscope, the magnification of the scanning electron microscope was adjusted so that about 500 to 1000 crystal particles were captured in the entire captured image. Then, 100 or more arbitrary crystal particles in the captured image were calculated based on the average particle diameter converted to a perfect circle using image processing software.
  • MgO powder is added as a sintering aid for Al 2 O 3
  • SiO 2 powder is used as a sintering aid for Al 2 O 3
  • Mn 2 SiO 4 glass phase is generated to lower the sintering temperature. It is added to achieve BaCO 3 powder is added to suppress the formation of MnAl 2 O 4 with increased hardness.
  • any one or more of TiO 2 powder, Ce 2 O 3 powder, and Fe 3 O 4 powder is included.
  • the dielectric loss tangent is increased, it is preferable not to include it as much as possible. Even if it is included, it is 0.1% by mass or less.
  • the dielectric loss tangent is preferably 30 ⁇ 10 ⁇ 4 or less at 1 MHz to 10 GHz. More preferably, it is 15 ⁇ 10 ⁇ 4 or less, more preferably 10 ⁇ 10 ⁇ 4 or less.
  • the wiring board 12 can be applied to a high-frequency circuit board, which is preferable.
  • the insulating substrate 18 can be realized which can be sintered at a low temperature of 1200 to 1350 ° C. (preferably 1200 to 1300 ° C.) and has a bending strength of 600 MPa or more.
  • “Bending strength” refers to a four-point bending strength, which is a value measured at room temperature based on JIS R1601 (bending test method for fine ceramics).
  • the Mg content By setting the Mg content to 0 to 2.0 mass% in terms of MgO, it is possible to suppress the sintering temperature from increasing, to suppress the grain growth of alumina, and to suppress the strength reduction.
  • the Si content By setting the Si content to 2.0 to 5.0 mass% in terms of SiO 2 , it is possible to suppress a decrease in the amount of the glass phase to be generated, 1200 to 1350 ° C. (preferably 1200 to 1300 ° C.) It is easy to achieve densification in the glass, and it is possible to suppress a decrease in the softening temperature and an increase in the porosity of the produced glass. Furthermore, a decrease in bending strength can be suppressed.
  • the Mn content By setting the Mn content to 3.2 to 8.1% by mass in terms of MnCO 3 , it is possible to suppress a decrease in the amount of the glass phase to be generated, 1200 to 1350 ° C. (preferably 1200 to 1300 ° C.) It is easy to achieve densification in the glass, and it is possible to suppress a decrease in the softening temperature and an increase in the porosity of the produced glass. Furthermore, a decrease in bending strength can be suppressed.
  • the Ba content By setting the Ba content to 0.05 to 2.0% by mass in terms of BaO, it becomes easy to suppress the formation of MnAl 2 O 4 and suppress the strength reduction. In addition, it is possible to suppress the sintering temperature from increasing, to suppress the grain growth of alumina, and to suppress the strength reduction.
  • the strength of the glass phase to be generated can be increased.
  • the bending strength is increased, and the wiring according to the present embodiment Miniaturization of the ceramic package 10 using the substrate 12 can be promoted.
  • it can be produced at a low firing temperature, which is advantageous for cost reduction.
  • the generated BaAl 2 Si 2 O 8 crystal phase suppresses extremely high hardness, can reduce the chipping occurrence rate in chip division by the pressure roller, and can improve productivity. it can.
  • the bending strength is 600 MPa or more. If the bending strength is lower than 600 MPa, thermal stress may be applied during the secondary mounting to cause destruction. Alternatively, there is a risk of destruction due to an impact or the like during handling or use. If the bending strength is 600 MPa or more, such a risk of destruction can be avoided.
  • the lid body 16 of the ceramic package 10 is prevented from being broken when hermetically sealed.
  • the manufacturing cost and reliability of the ceramic package 10 can be improved.
  • the ceramic substrate constituting the insulating substrate 18 and the like since the ceramic substrate constituting the insulating substrate 18 and the like has the above-described composition, it can be sintered at a low temperature of 1200 to 1350 ° C. (preferably 1200 to 1300 ° C.). Therefore, a ceramic substrate precursor (molded body before firing), various wiring layers (upper surface wiring layer 20, lower surface wiring layer 22, internal wiring layer 24) and via holes (first via hole 26a, second via hole 26b). By simultaneous firing, the wiring board 12 can be manufactured, and the manufacturing process can be simplified.
  • various wiring layers contain copper and tungsten, copper and molybdenum, copper and tungsten and molybdenum, and the particle size of tungsten and the particle size of molybdenum (after firing) are less than 1.0 ⁇ m. More preferably, it is 0.7 ⁇ m or less.
  • the particle size of tungsten and / or molybdenum when the sintered body of tungsten contained in the various wiring layers after firing was determined as follows. That is, the magnification of the scanning electron microscope was adjusted so that when the surface of various wiring layers was imaged with a scanning electron microscope, about 500 to 1000 tungsten particles and / or molybdenum particles were captured in the entire captured image. . Then, 100 or more arbitrary tungsten particles and / or molybdenum particles in the captured image were calculated by an average particle diameter converted into a perfect circle using image processing software.
  • the surface roughness Ra of the upper surface wiring layer 20 and the lower surface wiring layer 22 is less than 2.5 ⁇ m. Preferably they are 1.7 micrometers or more and less than 2.5 micrometers, More preferably, they are 1.7 micrometers or more and 2.0 micrometers or less.
  • the surface roughness was measured on the surfaces of the upper surface wiring layer 20 and the lower surface wiring layer 22 with a laser microscope (manufactured by Keyence Corporation: VK-9700) at a magnification of 500 times.
  • the upper surface wiring layer 20 and the lower surface wiring layer 22 had an adhesive strength with the insulating substrate 18 of 2 kg or more. Within this range, the upper surface wiring layer 20 and the lower surface wiring layer 22 are peeled off (including partial peeling and all peeling) during the manufacturing process of the wiring board 12, transportation, and the process of using as the ceramic package 10. This contributes to improvement in yield and reliability.
  • the adhesive strength is a concept representing the adhesion between the insulating substrate 18 and the conductor (the upper surface wiring layer 20 and the lower surface wiring layer 22).
  • a lead wire obtained by bending a 0.6 mm diameter tin-coated annealed copper wire into an L-shape is soldered to a conductor pattern having a square shape and a side length of 2 mm, and a tensile speed of 20 mm / sec. The tensile strength when pulled vertically.
  • This conductor pattern may be plated with Ni to ensure solder wettability.
  • step S1a of FIG. 2 the Al 2 O 3 powder is 89.0 to 92.0% by mass, the SiO 2 powder is 2.0 to 5.0% by mass, and the MnCO 3 powder is 3.2 to 8.1%.
  • a mixed powder containing 1% by mass, 0 to 2.0% by mass of MgO powder and 0.06 to 2.6% by mass of BaCO 3 powder is prepared.
  • step S1b an organic component (binder) is prepared, and step S1c Prepare a solvent.
  • the average particle size of the Al 2 O 3 powder is preferably 0.3 to 2.5 ⁇ m.
  • the average particle size of the SiO 2 powder is preferably 0.1 to 2.5 ⁇ m.
  • the average particle size of the MnCO 3 powder is preferably 0.5 to 4.0 ⁇ m.
  • the average particle size of the MgO powder is preferably 0.1 to 1.0 ⁇ m.
  • the average particle size of the BaCO 3 powder is preferably 0.5 to 4.0 ⁇ m.
  • Examples of the organic component (binder) prepared in step S1b include a resin, a surfactant, and a plasticizer.
  • examples of the resin include polyvinyl butyral
  • examples of the surfactant include tertiary amines
  • examples of the plasticizer include phthalic acid esters (for example, diisononyl phthalate: DINP).
  • Examples of the solvent prepared in step S1c include alcohol solvents and aromatic solvents.
  • Examples of the alcohol solvent include IPA (isopropyl alcohol), and examples of the aromatic solvent include toluene.
  • step S2 after mixing and dispersing the organic component and the solvent in the above-mentioned mixed powder, in step S3, by a known molding method such as a press method, a doctor blade method, a rolling method, an injection method, A ceramic molded body (also referred to as a ceramic tape) that is a precursor of the ceramic substrate is produced.
  • a known molding method such as a press method, a doctor blade method, a rolling method, an injection method
  • a ceramic molded body also referred to as a ceramic tape
  • an organic component or a solvent is added to the mixed powder to prepare a slurry, and then a ceramic tape having a predetermined thickness is formed by a doctor blade method.
  • an organic component is added to the mixed powder, and a ceramic tape having a predetermined thickness is produced by press molding, rolling molding, or the like.
  • step S4 the ceramic tape is cut and processed into a desired shape, a first tape having a large area for the first substrate, a second tape having a large area for the second substrate, and a third tape for the frame. Then, a fourth tape for the lid is produced, and further, through holes for forming the first via hole 26a and the second via hole 26b are formed by micro drilling, laser processing, or the like.
  • step S5 a conductive paste for forming the upper surface wiring layer 20, the lower surface wiring layer 22, and the internal wiring layer 24 is screen-printed and gravured on the first tape and the second tape manufactured as described above. Printing is applied by a method such as printing, and a conductive paste is filled in the through holes as desired.
  • Conductor paste uses a mixture of Cu and W, or a mixture of Cu and Mo, or a mixture of Cu, W and Mo as a conductor component, and this is equivalent to Al 2 O 3 powder, SiO 2 powder, or ceramic substrate
  • the powder is preferably added in an amount of, for example, 1 to 20% by mass, particularly 8% by mass or less.
  • step S6 the first tape and the second tape on which the conductive paste is printed and applied, and the third tape for the frame are aligned and laminated and pressure-bonded to produce a laminated body.
  • step S7 dividing grooves for dividing the chip are formed on both surfaces of the laminate by, for example, knife cutting.
  • a laminated original plate (multiple substrate) in which the laminate and the conductor paste are simultaneously fired is produced.
  • this firing as described above, it is possible to produce a ceramic substrate having a crystal phase of Al 2 O 3 as a main crystal phase and including only a BaAl 2 Si 2 O 8 crystal phase, that is, a multi-chip substrate. it can.
  • the oxidation of the metal in the conductor paste can be prevented by performing the firing atmosphere in the forming gas atmosphere as described above.
  • the firing temperature is preferably in the temperature range described above. When the firing temperature is lower than 1200 ° C., the densification is insufficient and the bending strength does not reach 600 MPa. When the firing temperature is higher than 1350 ° C., the first tape, the second tape, and the third tape constituting the laminated body Variations in shrinkage rate increase and dimensional accuracy decreases. This leads to a decrease in yield and increases the cost. Of course, the higher the firing temperature, the more expensive the equipment.
  • step S9 the above-mentioned multi-chip substrate is plated, and the upper wiring layer 20 and the lower wiring layer 22 formed on the surface of the multi-chip substrate are coated with Ni, Co, Cr, Au.
  • a plating layer made of at least one of Pd and Cu is formed.
  • step S10 the multi-piece substrate is pressed with a pressing roller or the like and divided into a plurality of pieces (chip division), and a plurality of wiring boards 12 having the accommodation spaces 28 are produced.
  • step S ⁇ b> 11 the crystal resonator 30 is mounted on the upper surface wiring layer 20 via the conductor layer 32 in each accommodation space 28 of the plurality of wiring boards 12.
  • step S12 the quartz resonator 30 is mounted on the upper surface of each wiring substrate 12 by hermetically sealing the ceramic substrate 16 with the sealing glass layer 34 formed thereon. A plurality of ceramic packages 10 are completed.
  • the crystal phase is a ceramic having Al 2 O 3 as the main crystal phase and only including the BaAl 2 Si 2 O 8 crystal phase and a bending strength of 600 MPa or more.
  • a substrate can be made. That is, a ceramic substrate capable of reducing the size and thickness of the ceramic package 10 and the like and improving the bending strength can be produced at a low firing temperature, and the cost of the ceramic substrate and the product using the ceramic substrate can be reduced. Can be reduced.
  • the ceramic substrate constituting the insulating substrate 18 of the ceramic package 10 described above is configured such that the crystal phase includes Al 2 O 3 as the main crystal phase and the BaAl 2 Si 2 O 8 crystal phase alone.
  • the ceramic bodies according to the first to third modifications to be described may be employed.
  • the crystal phase includes Al 2 O 3 and ZrO 2 as the main crystal phase, and the crystal phase includes Mn 3 Al 2 (SiO 4 ) 3 or MgAl 2 O 4 .
  • Mg is preferably contained in an amount of 0 to 2.0% by mass in terms of MgO.
  • the ceramic substrate according to the first modification is, for example, 70.0 to 90.0% by mass of Al 2 O 3 powder, 10.0 to 30.0% by mass of ZrO 2 powder, and 2.0 to 7. After forming a molded body containing 0% by mass, SiO 2 powder 2.0-7.0% by mass, BaO powder 0.5-2.0% by mass, MgO powder 0-2.0% by mass, The compact is produced by firing at 1200 to 1350 ° C. The bending strength of this ceramic substrate is 650 MPa or more.
  • the crystal phase includes 3Al 2 O 3 .2SiO 2 as a main crystal phase, and includes Al 2 O 3 and ZrO 2 in addition.
  • Al is 40.0 to 70.0% by mass in terms of Al 2 O 3
  • Zr is 5.0 to 40.0% by mass in terms of ZrO 2
  • Si is 10.0 to 30 in terms of SiO 2. It is preferable that 0.0% by mass and Mn be contained in an amount of 2.0 to 8.0% by mass in terms of MnO.
  • At least one element of Ba, Ti, Y, Ca, and Mg may be included.
  • the total of Al 2 O 3 , ZrO 2 , SiO 2 and MnO is 100% by mass
  • when Ba is included 1.5% by mass or less in terms of BaO is included
  • when Ti is included 1 in terms of TiO 2 It includes .5 wt% or less
  • it contains Ca comprises 1.5 wt% or less in terms of CaO
  • the ceramic substrate according to the second modification is, for example, 3Al 2 O 3 .2SiO 2 (mullite) powder of 50.0 to 93.0 mass%, ZrO 2 powder of 5.0 to 40.0 mass%, Al 2 O 3 After forming a compact containing 0 to 36.0% by mass of powder, 0 to 16.0% by mass of SiO 2 powder, and 2.0 to 8.0% by mass of MnO powder, It is produced by firing at 0 ° C. The bending strength of this ceramic substrate is 450 MPa or more.
  • the wiring board using the ceramic substrate according to the first modification and the second modification described above can also be sintered at a low temperature, and the adhesion of the wiring layer to the insulating board can be improved. It can be.
  • the example in which the wiring board is applied to the ceramic package is shown, but it can also be applied to a high-frequency circuit board or the like.
  • Examples 1 to 9 and Comparative Example 1 a wiring board similar to the wiring board 12 shown in FIG. 1 was prepared, and the sheet resistance of the surface wiring layer and the internal wiring layer, the W contained in the surface wiring layer and the internal wiring layer, and The grain size of Mo, the surface roughness Ra of the surface wiring layer, and the crystal grain size, crystal phase, bending strength (bending strength) of the insulating substrate 18 and adhesion strength of the surface wiring layer were confirmed.
  • the upper surface wiring layer, the lower surface wiring layer and the internal wiring layer shown in FIG. 1 were formed, and the formation of the first via hole and the second via hole was omitted.
  • Al 2 O 3 powder was used as the main component of the raw material powder.
  • the average particle diameter of the Al 2 O 3 powder is 1.1 ⁇ m.
  • the composition of the insulating substrate after firing was Al 2 O 3 : 92.5% by mass, SiO 2 : 4.0% by mass, MnO: 2.9% by mass, MgO: 0.3% by mass, BaO: 0. .2% by mass.
  • Insulating substrate No. 2 Insulating substrate No. 1 except that the average particle size of the Al 2 O 3 powder is 0.5 ⁇ m. Same as 1.
  • the composition of the insulating substrate after firing was Al 2 O 3 : 89.6 mass%, SiO 2 : 5.6 mass%, MnO: 4.1 mass%, MgO: 0.4 mass%, BaO: 0.3 Except for the mass%, the insulation substrate No. Same as 2.
  • Al 2 O 3 powder and ZrO 2 powder were used as the main component of the raw material powder. Among them, the average particle diameter of the Al 2 O 3 powder is 1.1 ⁇ m.
  • the composition of the insulating substrate after firing was Al 2 O 3 : 68.8% by mass, ZrO 2 : 18.7% by mass, SiO 2 : 4.8% by mass, MnO: 5.3% by mass, MgO: 1.0% by mass and BaO: 1.3% by mass.
  • Insulating substrate No. 5 3Al 2 O 3 .2SiO 2 powder and ZrO 2 powder were used as the main component of the raw material powder.
  • the composition of the insulating substrate after firing was as follows: Al 2 O 3 : 50.5% by mass, ZrO 2 : 24.1% by mass, SiO 2 : 19.9% by mass, MnO: 4.4% by mass, BaO: 1.1% by mass.
  • Al 2 O 3 powder was used as the main component of the raw material powder.
  • the average particle diameter of the Al 2 O 3 powder is 1.8 ⁇ m.
  • the composition of the insulating substrate after firing is Al 2 O 3 : 94.0% by mass, SiO 2 : 3.0% by mass, and MgO: 3.0% by mass.
  • DINP diisononyl phthalate
  • a conductive paste for forming a surface wiring layer (upper surface wiring layer, lower surface wiring layer) and an internal wiring layer was printed and applied to the first tape and the second tape.
  • the conductor paste used a mixture of Cu and W as a conductor component.
  • the composition of the conductor part after baking is Cu: 12 vol%, W: 88 vol%.
  • the laminated body, the third tape, and the fourth tape are fired in a forming gas atmosphere having a firing temperature (maximum temperature) of 1350 ° C. and H 2 + N 2 , and the wiring substrate, the first ceramic substrate, and the first ceramic substrate according to the first embodiment.
  • Two ceramic substrates were produced.
  • the surface wiring layer and the internal wiring layer were formed by simultaneous firing.
  • the first ceramic substrate is used for confirming the crystal grain size and the crystal phase
  • the production of the first ceramic substrate and the second ceramic substrate is the same in the following Examples 2 to 9 and Comparative Example 1.
  • the upper surface wiring layer has a square planar shape and a side length of 2 mm for measuring the adhesive strength.
  • Example 2 The same as Example 1 except that the composition of the conductor part after firing for forming the surface wiring layer (upper surface wiring layer, lower surface wiring layer) and the internal wiring layer was Cu: 18 vol%, W: 82 vol% Thus, a wiring board according to Example 2 was produced.
  • Example 3 Insulation substrate No. 2 using the raw material powder, the composition of the conductor part after firing was Cu: 23 vol%, W: 77 vol%, and the firing temperature (maximum temperature) was 1270 ° C. A wiring board according to Example 3 was produced.
  • Example 4 A wiring board according to Example 4 was produced in the same manner as in Example 3 except that the composition of the conductor part after firing was Cu: 35 vol% and W: 65 vol%.
  • Example 5 Insulation substrate No. 3, the composition of the conductor part after firing was Cu: 45 vol%, W: 55 vol%, and the firing temperature (maximum temperature) was 1200 ° C. A wiring board according to Example 5 was produced.
  • Example 6 A wiring board according to Example 6 was produced in the same manner as in Example 5 except that the composition of the conductor part after firing was Cu: 53 vol% and W: 47 vol%.
  • Example 7 is the same as Example 5 except that a mixture of Cu and Mo was used as the conductor component of the conductor paste, and the composition of the conductor part after firing was Cu: 53 vol% and Mo: 47 vol%. The wiring board which concerns on was produced.
  • Example 8 Insulation substrate No.
  • the raw material powder of No. 4 was used, the composition of the conductor part after firing was Cu: 15 vol%, W: 85 vol%, and the firing temperature (maximum temperature) was 1310 ° C.
  • a wiring board according to Example 8 was produced.
  • Example 9 Insulation substrate No. 5 using the raw material powder, the composition of the conductor part after firing was Cu: 25 vol%, W: 75 vol%, and the firing temperature (maximum temperature) was 1290 ° C. A wiring board according to Example 9 was produced.
  • Sheet resistance Each sheet resistance of the upper surface wiring layer, the lower surface wiring layer, and the internal wiring layer was measured by a four-terminal method, and the average value was defined as the sheet resistance.
  • Adhesive strength A lead wire obtained by bending a tin-coated annealed copper wire having a diameter of 0.6 mm into an L-shape was soldered to an upper surface wiring layer having a square shape and a side length of 2 mm, and was pulled vertically at a pulling speed of 20 mm / sec. The tensile strength was measured. The evaluation criteria are divided into three stages A, B, and C with the adhesive strength of 2 kg as the boundary, and the highest adhesive strength range is A, and the evaluation strengths B, C are evaluated in order as the adhesive strength decreases. did. Also, the evaluation strength D was less than 2 kg of adhesive strength.
  • the crystal grain size, crystal phase and bending strength (bending strength) of the insulating substrate were confirmed as follows.
  • Crystal phase Each first ceramic substrate was identified by X-ray diffraction. As a criterion for determining whether or not a crystal phase is contained, the main peak intensity of 3% or more of the intensity of the main peak (104 plane) of alumina was assumed. That is, the contained crystal phase was confirmed based on the position of the main peak intensity (peak position) of 3% or more, the Miller index, the lattice constant, and the like with respect to the intensity of the main peak of alumina.
  • the crystal grain size of Al 2 O 3 is less than 1.5 ⁇ m
  • the grain size of tungsten or molybdenum is less than 1.0 ⁇ m
  • the surface roughness Ra of the surface wiring layer is 2. It was less than 5 ⁇ m.
  • the sheet resistance of the surface wiring layer and the internal wiring layer was 6.0 m ⁇ / sq.
  • the adhesive strength was 2 kg or more.
  • the crystal grain size of Al 2 O 3 is less than 1.0 ⁇ m and the surface roughness Ra of the surface wiring layer is less than 2.0 ⁇ m.
  • the sheet resistance of the wiring layer is 3.0 m ⁇ / sq.
  • the adhesive strength was also evaluated as A.
  • Comparative Example 1 the evaluation of the adhesive strength was D. This is presumably because the crystal grain size of the insulating substrate is as large as 4.0 ⁇ m, and the surface roughness Ra of the surface wiring layer is as large as 3.0 ⁇ m, so that the adhesion of the surface wiring layer to the insulating substrate is reduced. In Comparative Example 1, the sheet resistance of the surface wiring layer and the internal wiring layer was 8.0 m ⁇ / sq. It was high. Furthermore, since the insulating substrate of Comparative Example 1 had only the Al 2 O 3 crystal phase as the crystal phase, the bending strength was as low as 550 MPa.
  • the wiring board according to the present invention is not limited to the above-described embodiment, and various configurations can be adopted without departing from the gist of the present invention.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Inorganic Insulating Materials (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
PCT/JP2016/058424 2015-03-17 2016-03-17 配線基板 WO2016148217A1 (ja)

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JP2019179851A (ja) * 2018-03-30 2019-10-17 日本特殊陶業株式会社 セラミック配線基板
WO2020085148A1 (ja) * 2018-10-22 2020-04-30 日本碍子株式会社 セラミック素地
WO2021070373A1 (ja) * 2019-10-11 2021-04-15 日本碍子株式会社 パッケージ
WO2021070375A1 (ja) * 2019-10-11 2021-04-15 日本碍子株式会社 パッケージ
WO2021079450A1 (ja) * 2019-10-24 2021-04-29 日本碍子株式会社 パッケージ
WO2023152918A1 (ja) * 2022-02-10 2023-08-17 Ｎｇｋエレクトロデバイス株式会社 パッケージの製造方法

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JP6822334B2 (ja) * 2017-07-04 2021-01-27 株式会社デンソー 温度センサ

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JP2019179851A (ja) * 2018-03-30 2019-10-17 日本特殊陶業株式会社 セラミック配線基板
JPWO2020085148A1 (ja) * 2018-10-22 2021-09-16 日本碍子株式会社 セラミック素地
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WO2023152918A1 (ja) * 2022-02-10 2023-08-17 Ｎｇｋエレクトロデバイス株式会社 パッケージの製造方法

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