WO2016141675A1 - 湿法刻蚀设备 - Google Patents

湿法刻蚀设备 Download PDF

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Publication number
WO2016141675A1
WO2016141675A1 PCT/CN2015/087022 CN2015087022W WO2016141675A1 WO 2016141675 A1 WO2016141675 A1 WO 2016141675A1 CN 2015087022 W CN2015087022 W CN 2015087022W WO 2016141675 A1 WO2016141675 A1 WO 2016141675A1
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WO
WIPO (PCT)
Prior art keywords
cleaning liquid
etching
spray pipe
chamber
wet etching
Prior art date
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PCT/CN2015/087022
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English (en)
French (fr)
Inventor
薛大鹏
Original Assignee
京东方科技集团股份有限公司
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Priority to US14/906,866 priority Critical patent/US20170110344A1/en
Publication of WO2016141675A1 publication Critical patent/WO2016141675A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching

Definitions

  • the present invention relates to the field of microelectronic processing equipment, and in particular, to a wet etching apparatus.
  • TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • ITO Indium Tin Oxide
  • a photoresist pattern is formed by photolithography, and finally the ITO thin film is patterned by wet etching to form a final transparent display electrode.
  • FIG. 1 is a schematic structural view of a prior art wet etching apparatus for patterning an ITO film.
  • the substrate covered with the ITO film is accessed by an inlet unit (IN CV), and the surface organic matter is removed in the cleaning chamber (EUV), and then enters the transition unit (NEU), and then passes through the front buffer chamber (BUF1). Enter the etch chamber (ETCH).
  • an ITO film ie, an ITO film not covered by the photoresist pattern
  • an etching solution ie, an ITO film not covered by the photoresist pattern
  • the substrate is sent out by the rear buffer chamber (BUF2) via the first water washing unit (SWR1), the second water washing unit (SWR2), the third water washing unit (SWR3), the fourth water washing unit (SWR4), and the final water washing unit (FR).
  • the cleaning is performed to remove the etching liquid remaining on the surface of the substrate, and then dried by the air knife unit (AK), and finally transferred out of the wet etching apparatus by the transfer unit (NT) and the outlet unit (OUT CV).
  • 2A is a top plan view of an etch chamber (ETCH) and front and rear buffer chambers (BUF1, BUF2) in the wet etching apparatus shown in FIG. 1.
  • 2B is a side view of the etching chamber (ETCH) and the front and rear buffer chambers (BUF1, BUF2) in the wet etching apparatus shown in FIG. 1.
  • the transfer wheel (101, 201, 301, etc.) transfers the substrate 400 from the front buffer chamber 100 to the etch chamber 200 for etching, and then the etched substrate is transferred from the etch chamber 200 to the rear buffer chamber 300. .
  • a front shutter 203 is mounted at the entrance of the front buffer chamber 100 near the etching chamber of the etching chamber 200.
  • a shaft 203a is attached to a lower portion of the front shield door 203.
  • the rotating shaft 203a is connected to the cylinder, and the upper shielding door can be driven to perform the up/down turning to complete the opening/closing action by the up and down movement of the cylinder.
  • the front shutter door 203 is opened before the substrate 400 enters the etching chamber 200 from the front buffer chamber 100. After the substrate 400 has completely entered the etch chamber 200, the front shield door 203 is closed.
  • a rear shield door 204 is mounted at the exit of the rear buffer chamber 300 near the etching chamber 200.
  • the rear shielding door 204 has the same structure and operation as the front shielding door 203, and the lower portion thereof is also mounted with a rotating shaft 204a.
  • the rear shutter door 204 is opened before the substrate 400 enters the rear buffer chamber 300. After the substrate 400 has fully entered the rear buffer chamber 300, the rear shield door 204 is closed.
  • the etching chamber 200 remains relatively closed except for the time of entry and exit of the substrate, thereby creating a stable etching environment for the etching of the substrate.
  • the substrate etching generally adopts a shower mode, that is, the etching liquid shower device 202 ejects an etching liquid to the lower substrate, thereby removing the ITO film not covered by the photoresist pattern.
  • Oxalic acid also known as oxalic acid
  • the oxalic acid used for ITO wet etching is generally an aqueous solution having a concentration of 3.4% to 3.8%, and the process temperature is 40 to 45 °C.
  • oxalic acid has a characteristic that it is easy to form white crystals after cold. The white crystals are soluble in water.
  • the front shielding door 203 and the rear shielding door 204 are continuously opened and closed, and the oxalic acid in the etching chamber 200 is volatilized from the front and rear shielding doors in the open state. Since the temperature of the front and rear buffer chambers is lower than the temperature of the etching chamber, oxalic acid will form a large amount of crystal 601 at the entrance of the etching chamber, the front shielding door, the outlet and the rear shielding door, as shown in FIG. . Over time, oxalic acid crystals 601 can cover the entrance and exit of the entire etch chamber. If it is not cleaned in time, crystallization 601 will cause pollution of the internal environment of the machine, and even cause scratches on the substrate, which seriously affects product quality. However, frequent cleaning can take up a lot of up time and reduce the equipment operation ratio.
  • etchants that are easy to crystallize for wet etching in semiconductor-related industries for example, HNO 3 , CH 3 COOH or H 3 PO 4 as the main component, for AL, MO, Ag, Oxide (such as ITO, IGZO, etc.) etching etching solution; H 2 O 2 as a main component of the Cu etching solution, etc.
  • HNO 3 , CH 3 COOH or H 3 PO 4 as the main component
  • AL MO
  • H 2 O 2 as a main component of the Cu etching solution, etc.
  • the present invention provides a wet etching apparatus for removing etching liquid at the inlet and outlet of an etching chamber or etching of an etching liquid formed by an etching liquid, thereby improving production efficiency and product quality.
  • the wet etching apparatus of the present invention has a function of removing the etching liquid outside the etching chamber, and includes: an etching chamber having an etching chamber inlet at the front end and an etching chamber outlet at the rear end, wherein the etching In the cavity, the film to be etched on the substrate is etched by an etchant; and a decrystallization device is used to clean the etchant remaining at the entrance of the etch chamber and/or the exit of the etch chamber with a cleaning solution or The etching liquid formed by the etching liquid is crystallized.
  • the wet etching apparatus of the present invention has the following advantageous effects.
  • the cleaning liquid supply line can recycle the waste water discharged from the wet etching equipment without consuming additional water resources and reducing the production cost.
  • FIG. 1 is a schematic structural view of a prior art wet etching apparatus for patterning an ITO film
  • FIG. 2A is a top plan view of an etching chamber and front and rear buffer chambers in the wet etching apparatus shown in FIG. 1;
  • FIG. 2B is a side view of the etching chamber and the front and rear buffer chambers in the wet etching apparatus shown in FIG. 1;
  • FIG. 3 is a schematic view showing the formation of oxalic acid crystals at the shielding door by the wet etching apparatus shown in FIG. 1;
  • FIG. 4A is a schematic view of a wet etching apparatus according to a first embodiment of the present invention.
  • FIG. 4B is a schematic view showing the position of the front buffer chamber near the etching chamber in the wet etching apparatus shown in FIG. 4A;
  • Figure 5 is a schematic view of a wet etching apparatus according to a second embodiment of the present invention.
  • FIG. 6 is a schematic view showing the working process of the wet etching apparatus shown in FIG. 5.
  • 500-decrystallization device 501-pre-cleaning liquid spray pipe; 502-post-cleaning liquid spray pipe; 501a, 502a-valve; 501b, 502b-pump; 503-cleaning liquid supply line; 504-water tank.
  • the embodiment of the invention utilizes the characteristic that the oxalic acid crystal is dissolved in water, and the cleaning liquid spray pipe is added under the shielding door at the inlet and the exit of the etching chamber, thereby effectively removing the etching chamber inlet, the etching chamber outlet and the shielding door.
  • the etching solution or etching solution at the place is crystallized.
  • a wet etching apparatus is provided.
  • 4A is a schematic view of a wet etching apparatus according to a first embodiment of the present invention.
  • 4B is a schematic view showing the position of the front buffer chamber near the etching chamber in the wet etching apparatus shown in FIG. 4A.
  • the wet etching apparatus of this embodiment includes: a front buffer chamber 100, an etching chamber 200, and a rear The buffer chamber 300 and the decrystallization device 500.
  • the decrystallization device 500 uses the cleaning liquid to clean the etching liquid remaining at the entrance of the etching chamber of the etching chamber 200 and/or the outlet of the etching chamber or the etching liquid formed by the etching liquid, thereby preventing etching.
  • the etching liquid crystal is formed at the chamber inlet and/or the etching chamber outlet, or the etching liquid crystal formed at the etching chamber inlet and/or the etching chamber outlet is removed.
  • the decrystallization device 500 includes: a front cleaning liquid spray pipe 501 installed in a side of the front buffer chamber 100 near the etching chamber 200; and a rear cleaning liquid spray installed on a side of the rear buffer chamber 300 near the etching chamber 200 a tube 502; and a cleaning liquid supply line 503.
  • the front cleaning liquid spray pipe 501 and the rear cleaning liquid spray pipe 502 are supplied with cleaning liquid from the cleaning liquid supply line 503 for cleaning the etching liquid formed at the entrance of the etching chamber, the outlet of the etching chamber, and the shielding door. .
  • the etching chamber 200 is a main component of the wet etching apparatus.
  • the etching liquid shower device 202 ejects a predetermined concentration of oxalic acid solution onto the lower substrate to remove the ITO film not covered by the photoresist on the substrate.
  • the front buffer chamber 100 and the rear buffer chamber 300 are respectively connected to the front end and the rear end of the etching chamber 200, and the two are in communication with the etching chamber 200 through the etching chamber inlet and the etching chamber outlet, respectively.
  • Continuous transfer wheels 101, 201, 301 are mounted on the transport path.
  • the substrate 400 is etched by the front buffer chamber 100 through the etch chamber inlet into the etch chamber 200 under the push of the transfer wheel, and is transferred from the etch chamber 200 to the back buffer chamber 300 through the etch chamber outlet.
  • a front shielding door 203 is installed at the front buffer chamber 100 near the entrance of the etching chamber.
  • the front shielding door 203 is mounted to a lower portion of the entrance of the etching chamber through a rotating shaft 203a.
  • the front shielding door 203 is folded 90° toward the front buffer chamber 100 side to open the etching chamber inlet.
  • the substrate 400 enters the etch chamber 200 from the etch chamber inlet.
  • the front shielding door 203 is folded 90° toward the etching chamber 200 side to close the etching chamber inlet to ensure the relative sealing of the environment in the etching chamber 200.
  • a rear shield door 204 is mounted near the exit of the etch chamber at the rear buffer chamber.
  • the rear shielding door 204 is mounted on a lower portion of the outlet of the etching chamber through a rotating shaft.
  • the rear shield door 204 is folded 90° toward the side of the rear buffer chamber 300 to open the etching chamber outlet.
  • the substrate 400 enters the back buffer chamber 300 from the exit of the etch chamber.
  • the rear shield door 204 is folded 90° toward the side of the etching chamber 200 to close the etching chamber outlet to ensure the relative closure of the environment in the etching chamber 200.
  • a front cleaning liquid spray pipe 501 is attached to a lower portion of the front shielding door 203.
  • a lower cleaning liquid spray pipe 502 is attached to the lower portion of the rear shield door 204.
  • the front cleaning liquid spray pipe 501 and the rear cleaning liquid spray pipe The cleaning liquid is supplied from the cleaning liquid supply line 503, and the water column ejected by the two can clean the corresponding portion of the shielding door in the folded state, and remove the oxalic acid before it crystallizes.
  • water is used as the cleaning liquid, and the etching liquid is removed from the shielding door before the etching liquid forms a crystal, thereby preventing the etching liquid from forming an etching liquid crystal on the shielding door.
  • the front cleaning liquid spray pipe 501 and the rear cleaning liquid spray pipe 502 each include: a cleaning liquid spray pipe body and a hole distributed in the direction of the cleaning liquid spray pipe body.
  • the pore diameter of the hole is generally between 2 and 5 mm.
  • the height of the water column sprayed on the holes in the front cleaning liquid spray pipe 501 and the rear cleaning liquid spray pipe 502 is preferably flushed to the shaded door in a downwardly folded state. If the water column is too high, the water droplets will splash onto the substrate, affecting the concentration of the oxalic acid etching solution, resulting in etching residue, mura (color difference caused by uneven etching), etc.; if the water column is too low, it will affect the removal of the etching solution or Its crystallization effect.
  • both ends of the front cleaning liquid spray pipe 501 and the rear cleaning liquid spray pipe 502 are closed, and the middle portion is connected to the cleaning liquid supply pipe 503 through the valve 501a and the valve 502a, respectively.
  • the valves (501a, 502a) are used to adjust the water pressure in the washing liquid spray pipe, thereby controlling the height of the water column sprayed on the spray pipe of the cleaning liquid.
  • the cleaned wastewater can be discharged through the waste water discharge line of the front and rear buffer chambers.
  • the cleaning liquid supply line 503 is connected to the factory pure water line.
  • the method of simultaneously providing the de-crystallization device in the front buffer cavity and the rear buffer cavity is adopted, but the invention is not limited thereto.
  • the present invention can also provide a decrystallization device only in one of the front buffer chamber and the rear buffer chamber, and should also be within the scope of the present invention.
  • the method of uniformly supplying water by the front cleaning liquid spray pipe and the rear cleaning liquid spray pipe is adopted, but the invention is not limited thereto.
  • the front cleaning liquid spray pipe and the rear cleaning liquid spray pipe can also be separately supplied with water, and the present invention can also be realized.
  • the advantage of the wet etching apparatus of this embodiment is that the etching liquid of the etching chamber inlet, the etching chamber outlet and the shielding door is cleaned by the cleaning liquid spray pipe, the crystallization effect is removed, and the design cost is low.
  • the disadvantage is that the cleaning fluid spray pipe is always in a state of cleaning, wasting water resources.
  • FIG. 5 is a schematic illustration of a wet etching apparatus in accordance with a second embodiment of the present invention. Referring to FIG. 4A and FIG. 5, the wet etching apparatus of this embodiment is different from the wet etching apparatus of the first embodiment in that the cleaning liquid supply mode of the cleaning liquid supply line is different.
  • the decrystallization apparatus 500 further includes a water tank 504 and two pumps 501b and 502b.
  • the cleaning liquid supply line 503 is connected to the water tank 504, and the water in the water tank 504 is supplied by the factory pure water pipeline.
  • the pump 501b is disposed between the cleaning liquid supply line 503 and the front cleaning liquid spray pipe 501.
  • the pump 502b is disposed between the cleaning liquid supply line 503 and the rear cleaning liquid spray tube 502.
  • the front cleaning liquid spray pipe 501 is connected to the cleaning liquid supply pipe 503 through the pump 501b, and the control signal of the pump 501b is synchronized with the control signal of the front shielding door cylinder, that is, the front shielding door 203 is opened (ie, the front buffering chamber side)
  • the front cleaning liquid spray pipe 501 sprays water to the front shielding door 203 for cleaning; when the current shielding door 203 is closed (ie, folded toward the etching chamber side), the pump 501b is closed, and the front cleaning is performed.
  • the liquid spray pipe is no longer sprayed with water.
  • the post-cleaning liquid spray pipe 502 is connected to the cleaning liquid supply line 503 via the pump 502b, and the control signal of the pump 502b is synchronized with the control signal of the rear screen door cylinder, and will not be described again here.
  • FIG. 6 is a schematic view showing the working process of the wet etching apparatus shown in FIG. 5. Referring to FIG. 6, the working process of the wet etching apparatus of this embodiment will be explained in conjunction with the following steps A-E.
  • Step A The substrate 400 in the front buffer chamber is moved toward the etching chamber 200 under the pushing of the transfer wheel on the conveying path, as shown by A in FIG.
  • Step B Before the substrate 400 enters the etching chamber 200, the front shielding door 203 is folded 90° toward the front buffer chamber side to open the etching chamber inlet, and at the same time, the pump 501b is opened, and the front cleaning liquid spray tube 501 is turned to The front shielding door 203 sprays water to clean the etching liquid crystal at the entrance of the etching chamber and the front shielding door 203.
  • the height of the water spray is determined by the valve 501a, as shown in B of FIG.
  • Step C After the substrate 400 completely enters the etching chamber 200, the front shielding door 203 is folded toward the etching chamber side to close the etching chamber inlet, and the pump 501b is simultaneously closed, as shown in C of FIG.
  • Step D Before the substrate 400 approaches the rear buffer chamber 300, the rear shielding door 204 is folded 90° toward the rear buffer chamber side to open the etching chamber outlet, and the substrate 400 enters the rear buffer chamber 300 from the exit of the etching chamber.
  • the pump 502b is opened, and the cleaning liquid spray pipe 502 sprays water to the rear shielding door 204 to clean the crystallization of the etching liquid at the outlet of the etching chamber and the rear shielding door 204, and sprays water.
  • the height is determined by valve 502a, as shown in D of Figure 6.
  • Step E After the substrate 400 completely enters the rear buffer chamber 300, the rear shield door 204 is folded toward the etching chamber 200 side to close the etching chamber outlet, and the pump 502b is closed, as shown by E in FIG.
  • the advantage of the wet etching apparatus of this embodiment is that the cleaning liquid crystallization of the etching chamber inlet and the corresponding shielding door is cleaned by the cleaning liquid spraying device only when the substrate enters and exits the etching chamber.
  • the crystallization effect is good, and water resources are saved; the disadvantage is that the structure is complicated and the design cost is high.
  • another wet etching apparatus is also provided.
  • the wet etching apparatus of this embodiment is different from the second embodiment in that a water supply tank of the first water washing unit SWR1 of the wet etching apparatus leads a water supply tank.
  • the flow rate of the first washing unit SWR1 is large, and the amount of water for removing the oxalic acid crystals from the decrystallization device can be completely satisfied, and the excess water can be discharged from the top of the water tank.
  • the wastewater of the first water washing unit SWR1 is directly discharged.
  • the advantages of the embodiment are as follows: the crystallization effect is good, and the wastewater discharged by the wet etching device is recycled, without consuming water resources and reducing the production cost; the disadvantage is that the structure is complicated and the design cost is high.
  • the third embodiment is most preferred in view of long-term benefits.
  • the etching solution may also be other etching liquids which are easy to generate crystals, for example, HNO 3 , CH 3 COOH or H 3 PO 4 as main components, and are used for Al, Mo, Ag, oxides (such as ITO, IGZO).
  • Etching etching liquid, Cu etching liquid containing H 2 O 2 as a main component, and the like.
  • the etching liquid crystal can be cleaned using pure water as a cleaning liquid.
  • other liquids or corresponding effect enhancing components such as NaOH, KOH, etc.
  • the cleaning liquid in the embodiment of the present invention may be pure water or an aqueous solution of NaOH or KOH.
  • the cleaning solution can also be any suitable alkaline solution, the composition of which depends on the etching solution used in the wet etching apparatus.
  • etching chamber at the front end of the etching chamber, other chambers than the front buffer chamber may also be used. Similarly, at the rear end of the etching chamber, it is also possible to use other chambers than the rear buffer chamber, and the present invention is equally applicable.
  • the above definitions of the various elements and methods are not limited to the specific structures, shapes or manners mentioned in the embodiments, and those skilled in the art may simply modify or replace them, for example, in addition to the above embodiments.
  • the folding doors of the folding type other types of screening doors are equally applicable to the present invention.
  • the folding angle of the shutter door can be adjusted as needed without being strictly limited to 90° as described above.
  • the invention increases the cleaning liquid spray pipe at the etch chamber inlet and the etch chamber outlet of the etch chamber, and can effectively remove a large number of engravings at the entrance and exit of the etch chamber at a low cost.
  • Corrosion crystallization improve equipment utilization rate, cleanliness and product quality, has a high promotion and application value.

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Abstract

一种湿法刻蚀设备。该湿法刻蚀设备包括：刻蚀腔（200），其具有位于前端的刻蚀腔入口（203）和位于后端的刻蚀腔出口（204），其中在该刻蚀腔（200）内，基片（400）上的待刻蚀薄膜通过刻蚀液进行刻蚀；以及去结晶装置（500），其利用清洗液清洗在刻蚀腔入口（203）和／或刻蚀腔出口（204）处残留的刻蚀液或由刻蚀液形成的刻蚀液结晶（601）。本发明通过去结晶装置，可有效去除在刻蚀腔入口和刻蚀腔出口处残留的刻蚀液或由刻蚀液形成的刻蚀液结晶，藉此提高设备的稼动率和洁净度以及产品质量。

Description

湿法刻蚀设备 技术领域
本发明涉及微电子加工设备技术领域，尤其涉及一种湿法刻蚀设备。
背景技术
目前，在平板显示(Flat Panel Display，简称FPD)技术中，由于液晶显示器(Liquid Crystal Display，简称LCD)具有轻薄短小，节省摆放空间等优点，已经逐渐取代阴极射线管(Cathode Ray Tube，简称CRT)，成为主流的显示器。在各种类型的LCD中，薄膜场效应晶体管液晶显示器(Thin Film Transistor-Liquid Crystal Display，简称TFT-LCD)具有性能优良，适合大规模自动化生产等优点，已经成为主流的LCD产品。
在TFT-LCD制造工艺中，ITO(Indium Tin Oxide，氧化铟锡)凭借其自身优良的特性，被广泛用于制作透明显示电极。在ITO透明显示电极制作过程中，首先通过磁控溅射(sputter)形成ITO薄膜，再经过光刻形成光刻胶图形，最后通过湿法刻蚀将ITO薄膜图案化，形成最终的透明显示电极。
图1为现有技术用于ITO薄膜图案化的湿法刻蚀设备的结构示意图。请参照图1，表面覆盖ITO薄膜的基板由入口单元(IN CV)进入，在清洗腔(EUV)中去除表面的有机物，而后进入过渡单元(NEU)，再后，通过前缓冲腔(BUF1)进入刻蚀腔(ETCH)。在刻蚀腔中，通过刻蚀液将基板上不需要保留的ITO薄膜(即未被光刻胶图形覆盖的ITO薄膜)去除。而后，基板由后缓冲腔(BUF2)送出，经由第一水洗单元(SWR1)、第二水洗单元(SWR2)、第三水洗单元(SWR3)、第四水洗单元(SWR4)和最终水洗单元(FR)进行清洗，去除基板表面残留的刻蚀液，再后，经由风刀单元(AK)进行干燥，最后由传送单元(NT)和出口单元(OUT CV)被传送出湿法刻蚀设备。
图2A为图1所示湿法刻蚀设备中刻蚀腔(ETCH)及前、后缓冲腔(BUF1、BUF2)的俯视图。图2B为图1所示湿法刻蚀设备中刻蚀腔(ETCH)及前、后缓冲腔(BUF1、BUF2)的侧视图。如图2A和 图2B所示，在刻蚀腔200前后各有一缓冲腔-前缓冲腔100和后缓冲腔300。传送轮(101、201、301等)将基片400由前缓冲腔100传送至刻蚀腔200进行刻蚀，而后又可将完成刻蚀的基片由刻蚀腔200传送至后缓冲腔300。
在前缓冲腔100靠近刻蚀腔200的刻蚀腔入口处安装有前遮蔽门(shutter)203。该前遮蔽门203的下部安装有转轴(shaft)203a。该转轴203a与气缸相连，通过气缸的上下作动，可以驱动前遮蔽门进行上/下翻转完成开/关动作。在基片400由前缓冲腔100进入刻蚀腔200前，该前遮蔽门203打开。在基片400完全进入刻蚀腔200后，前遮蔽门203闭合。
同样，在后缓冲腔300靠近刻蚀腔200的出口处安装有后遮蔽门204。该后遮蔽门204的结构和工作方式与前遮蔽门203相同，其下部同样安装有转轴204a。在基片400进入后缓冲腔300前，该后遮蔽门204打开。在基片400完全进入后缓冲腔300后，后遮蔽门204闭合。
可见，除了基片进入和流出的时间之外，刻蚀腔200保持相对封闭，从而为基片的刻蚀营造一个稳定的刻蚀环境。
基片刻蚀一般采用喷淋模式，即刻蚀液喷淋装置202向下方的基片喷出刻蚀液，从而将未被光刻胶图形覆盖的ITO薄膜去除。草酸(又叫乙二酸)，因其成本低廉，且可完全满足整个TFT基板工艺需求，因而被广泛使用在ITO湿法刻蚀当中。在TFT基板工艺中，ITO湿法刻蚀所用的草酸一般为浓度在3.4％～3.8％的水溶液，工艺温度在40℃～45℃。然而，草酸有一特点，其遇冷后极易形成白色结晶。该白色结晶溶于水。
在ITO湿法刻蚀过程中，前遮蔽门203和后遮蔽门204不断的开合，刻蚀腔200内的草酸会从处于打开状态的前、后遮蔽门挥发出来。由于前、后缓冲腔的温度均低于刻蚀腔的温度，草酸遇冷结晶，会在刻蚀腔的入口、前遮蔽门、出口和后遮蔽门处形成大量结晶601，如图3所示。时间久了，草酸的结晶601可以覆盖整个刻蚀腔的入口及出口。如不及时清洁，结晶601将造成机台内部环境的污染，甚至造成基板的划伤，严重影响产品质量。然而，频繁的清洁，会占用设备大量的工作时间(up time)，降低设备稼动率(operation ratio)。
此外，对于半导体相关行业湿法刻蚀中用到的其他易于产生结晶 的刻蚀液(例如：以HNO3、CH3COOH或H3PO4为主要成分的、用于AL、MO、Ag、氧化物(如ITO、IGZO等)刻蚀的刻蚀液；以H2O2为主要成分的Cu刻蚀液等)，也存在上述结晶问题。因此，如何解决使用易于产生结晶的刻蚀液进行湿法刻蚀时产生大量结晶的问题，已成为半导体相关行业湿法刻蚀工艺中的一大难题。
发明内容
(一)要解决的技术问题
鉴于上述技术问题，本发明提供了一种湿法刻蚀设备，以去除刻蚀腔的入口、出口处的刻蚀液或由刻蚀液形成的刻蚀液结晶，提高生产效率和产品质量。
(二)技术方案
本发明的湿法刻蚀设备具有去除刻蚀腔外刻蚀液结晶功能，其包括：刻蚀腔，其具有位于前端的刻蚀腔入口和位于后端的刻蚀腔出口，其中在该刻蚀腔内，基片上的待刻蚀薄膜通过刻蚀液进行刻蚀；以及去结晶装置，其利用清洗液清洗在所述刻蚀腔入口和/或刻蚀腔出口处残留的刻蚀液或由所述刻蚀液形成的刻蚀液结晶。
(三)有益效果
从上述技术方案可以看出，本发明湿法刻蚀设备具有以下有益效果。
(1)通过对刻蚀腔入口、刻蚀腔出口处利用清洗液清洗残留的刻蚀液或由刻蚀液形成的刻蚀液结晶，可以有效防止在刻蚀腔入口和刻蚀腔出口处形成刻蚀液结晶，以及在刻蚀腔入口和刻蚀腔出口处已形成刻蚀液结晶时可以有效地去除该刻蚀液结晶。这提高了设备的稼动率和洁净度及产品的质量。
(2)清洗液供应管路可以循环使用湿法刻蚀设备排放的废水，无需消耗额外的水资源，降低了生产成本。
附图说明
图1为现有技术用于ITO薄膜图案化的湿法刻蚀设备的结构示意图；
图2A为图1所示湿法刻蚀设备中刻蚀腔及前、后缓冲腔的俯视图；
图2B为图1所示湿法刻蚀设备中刻蚀腔及前、后缓冲腔的侧视图；
图3为图1所示湿法刻蚀设备在遮蔽门处形成草酸结晶的示意图；
图4A为根据本发明第一实施例湿法刻蚀设备的示意图；
图4B为图4A所示湿法刻蚀设备中前缓冲腔靠近刻蚀腔位置的示意图；
图5为根据本发明第二实施例湿法刻蚀设备的示意图；以及
图6为图5所示湿法刻蚀设备工作过程的示意图。
【附图标记】
IN CV-入口单元；EUV-清洗腔；NEU-过渡单元；BUF1-前缓冲腔；ETCH-刻蚀腔；BUF2-后缓冲腔；SWR1-第一水洗单元；SWR2-第二水洗单元；SWR3-第三水洗单元；SWR4-第四水洗单元；FR-最终水洗单元；AK-风刀单元；NT-传送单元；OUT CV-出口单元。
100-前缓冲腔；101-传送轮。
200-刻蚀腔；201-传送轮；202-刻蚀液喷淋装置；203-前遮蔽门；204-后遮蔽门；203a、204a-转轴。
300-后缓冲腔；301-传送轮。
400-基片。
500-去结晶装置；501-前清洗液喷淋管；502-后清洗液喷淋管；501a、502a-阀门；501b、502b-泵；503-清洗液供应管路；504-水箱。
601-刻蚀液结晶。
具体实施方式
本发明的实施例利用草酸结晶溶于水的特点，通过在刻蚀腔入口与出口处的遮蔽门下方增加清洗液喷淋管，可有效去除在刻蚀腔入口、刻蚀腔出口及遮蔽门处的刻蚀液或刻蚀液结晶。为使本发明的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本发明进一步详细说明。
第一实施例
在本发明的一个示例性实施例中，提供了一种湿法刻蚀设备。图4A为根据本发明第一实施例湿法刻蚀设备的示意图。图4B为图4A所示湿法刻蚀设备中前缓冲腔靠近刻蚀腔位置的示意图。如图4A和图4B所示，本实施例湿法刻蚀设备包括：前缓冲腔100、刻蚀腔200、后 缓冲腔300和去结晶装置500。该去结晶装置500利用清洗液清洗在刻蚀腔200的刻蚀腔入口和/或刻蚀腔出口处残留的刻蚀液或由该刻蚀液形成的刻蚀液结晶，从而防止在刻蚀腔入口和/或刻蚀腔出口处形成刻蚀液结晶，或者去除在刻蚀腔入口和/或刻蚀腔出口处形成的刻蚀液结晶。该去结晶装置500包括：安装于前缓冲腔100内靠近刻蚀腔200一侧的前清洗液喷淋管501；安装于后缓冲腔300靠近刻蚀腔200的一侧的后清洗液喷淋管502；以及清洗液供应管路503。该前清洗液喷淋管501和后清洗液喷淋管502由清洗液供应管路503供应清洗液，用于清洗在刻蚀腔入口、刻蚀腔出口和遮蔽门处形成的刻蚀液结晶。
请参照图4A，刻蚀腔200是湿法刻蚀设备主要部件。在刻蚀腔200中，刻蚀液喷淋装置202向下方的基片喷出预设浓度的草酸溶液，对基片上未被光刻胶覆盖的ITO薄膜进行去除。
前缓冲腔100和后缓冲腔300分别连接于刻蚀腔200的前端和后端，两者分别通过刻蚀腔入口和刻蚀腔出口与刻蚀腔200相连通。在输送通路上安装有连续的传送轮101、201、301。基片400在传送轮的推动下，由前缓冲腔100通过刻蚀腔入口进入刻蚀腔200进行刻蚀，又由刻蚀腔200通过刻蚀腔出口传送至后缓冲腔300。
在前缓冲腔100靠近刻蚀腔入口处，安装有前遮蔽门203。该前遮蔽门203通过一转轴203a安装于刻蚀腔入口的下部。在基片400进入刻蚀腔200前，该前遮蔽门203朝向前缓冲腔100侧90°翻折，打开刻蚀腔入口。基片400由刻蚀腔入口进入刻蚀腔200。在基片400完全进入刻蚀腔200后，该前遮蔽门203朝向刻蚀腔200侧90°翻折，将刻蚀腔入口封闭，以保证刻蚀腔200内环境的相对封闭。
同样，在后缓冲腔靠近刻蚀腔出口处，安装有后遮蔽门204。该后遮蔽门204通过一转轴安装于刻蚀腔出口的下部。在基片400进入后缓冲腔300前，该后遮蔽门204朝向后缓冲腔300侧90°翻折，打开刻蚀腔出口。基片400由刻蚀腔出口进入后缓冲腔300。在基片400完全进入后缓冲腔300后，该后遮蔽门204朝向刻蚀腔200侧90°翻折，将刻蚀腔出口封闭，以保证刻蚀腔200内环境的相对封闭。
请参照图4A和图4B，在前缓冲腔100内，前遮蔽门203的下部，安装有前清洗液喷淋管501。在后缓冲腔300内，后遮蔽门204的下部，安装有后清洗液喷淋管502。该前清洗液喷淋管501和后清洗液喷淋管 502由清洗液供应管路503供应清洗液，两者喷出的水柱可以对处于翻折状态的遮蔽门相应部位进行清洗，在草酸形成结晶之前，将其去除。也就是说，在本实施例中，利用水作为清洗液，在蚀刻液形成晶体之前，从遮蔽门去除刻蚀液，从而防止该刻蚀液在遮蔽门上形成刻蚀液结晶。
本实施例中，前清洗液喷淋管501和后清洗液喷淋管502均包括：清洗液喷淋管本体及分布于该清洗液喷淋管本体且方向朝上的孔。其中，该孔的孔径一般介于2～5mm之间。此处，由于从喷嘴喷洒出的水容易溅落到基板上，因而与喷嘴相比，在本发明中优选采用设有孔的清洗液喷淋管进行清洗液的喷洒。
需要特别说明的是，前清洗液喷淋管501和后清洗液喷淋管502上孔喷淋的水柱高度，以刚好冲洗到处于向下翻折状态的遮蔽门为好。水柱过高，水珠会溅落到基板上，影响草酸刻蚀液的浓度，导致刻蚀残留，mura(刻蚀不均产生的色差)等不良；水柱过低，则会影响去除刻蚀液或其结晶的效果。
请参照图4A，前清洗液喷淋管501和后清洗液喷淋管502的两端封闭，中部分别通过阀门501a和阀门502a与清洗液供应管路503连接。其中，阀门(501a、502a)用于调节清洗液喷淋管内的水压，进而控制清洗液喷淋管上孔喷淋的水柱高度。清洗后的废水可通过前、后缓冲腔的废水排放管路排出。清洗液供应管路503连通至厂务纯水管路。
需要说明的是，本实施例及下文几个实施例中，均采用在前缓冲腔和后缓冲腔同时设置去结晶装置的方式，但本发明并不以此为限。本发明还可以仅在前缓冲腔和后缓冲腔其中之一内设置去结晶装置，同样应当在本发明的保护范围之内。
此外，本实施例及下文几个实施例中，均采用前清洗液喷淋管和后清洗液喷淋管统一供水的方式，但本发明并不以此为限。该前清洗液喷淋管和后清洗液喷淋管还可以分别供水，同样能够实现本发明。
本实施例湿法刻蚀设备的优点在于：由清洗液喷淋管对刻蚀腔进口、刻蚀腔出口和遮蔽门处的刻蚀液结晶一直进行清洗，去除结晶效果好，设计成本较低；缺点在于：清洗液喷淋管一直处于清洗状态，浪费水资源。
第二实施例
在本发明的另一个实施例中，还提供了另外一种湿法刻蚀设备。图5为根据本发明第二实施例湿法刻蚀设备的示意图。请参照图4A与图5，本实施例湿法刻蚀设备与实施例一湿法刻蚀设备的区别之处在于：清洗液供应管路的清洗液供应方式不同。
如图5所示，本实施例湿法刻蚀设备中，去结晶装置500还包括：水箱504和两个泵501b、502b。其中，清洗液供应管路503连接至水箱504，水箱504内的水由厂务纯水管路供应。泵501b设置于清洗液供应管路503和前清洗液喷淋管501之间。泵502b设置于清洗液供应管路503和后清洗液喷淋管502之间。
前清洗液喷淋管501通过泵501b连接至清洗液供应管路503，该泵501b的控制信号与前遮蔽门气缸的控制信号同步，即：该前遮蔽门203打开(即向前缓冲腔侧翻折)时，泵501b打开，前清洗液喷淋管501向前遮蔽门203喷水进行清洗；当前遮蔽门203关闭时(即向刻蚀腔侧翻折)时，泵501b关闭，前清洗液喷淋管不再喷水。
同样，后清洗液喷淋管502通过泵502b连接至清洗液供应管路503，该泵502b的控制信号与后遮蔽门气缸的控制信号同步，此处不再重述。
图6为图5所示湿法刻蚀设备工作过程的示意图。请参照图6，结合下述步骤A-E解释本实施例湿法刻蚀设备工作过程。
步骤A：在输送通路上传送轮的推动下，位于前缓冲腔的基片400朝向刻蚀腔200方向运动，如图6中A所示。
步骤B：在基片400进入刻蚀腔200前，该前遮蔽门203朝向前缓冲腔侧翻折90°，将刻蚀腔入口打开，同时，泵501b打开，前清洗液喷淋管501向前遮蔽门203喷水，对刻蚀腔入口及前遮蔽门203处的刻蚀液结晶进行清洗，喷水的高度由阀门501a确定，如图6中B所示。
步骤C：基片400完全进入刻蚀腔200后，前遮蔽门203朝向刻蚀腔侧翻折，将刻蚀腔入口封闭，同时泵501b同时关闭，如图6中C所示。
步骤D：在基片400靠近后缓冲腔300前，后遮蔽门204朝向后缓冲腔侧翻折90°，打开刻蚀腔出口，基片400由刻蚀腔出口进入后缓冲腔300，同时，泵502b打开，后清洗液喷淋管502向后遮蔽门204喷水，对刻蚀腔出口及后遮蔽门204处的刻蚀液结晶进行清洗，喷水 的高度由阀门502a确定，如图6中D所示。
步骤E：基片400完全进入后缓冲腔300后，后遮蔽门204朝向刻蚀腔200侧翻折，将刻蚀腔出口封闭，同时泵502b关闭，如图6中E所示。
本实施例湿法刻蚀设备的优点在于：仅在基片进出刻蚀腔时，由清洗液喷淋装置对刻蚀腔入(出)口和相应遮蔽门处的刻蚀液结晶进行清洗，去除结晶效果好，节省水资源；缺点在于：结构较复杂，设计成本较高。
第三实施例
在本发明的另一个实施例中，还提供了另外一种湿法刻蚀设备。本实施例湿法刻蚀设备与第二实施例的区别之处在于：由湿法刻蚀设备第一水洗单元SWR1的废水排放管路引出一道管路给水箱供水。第一水洗单元SWR1水洗的流量较大，完全可以满足此去结晶装置去除草酸结晶的水量，多余的水量可以从水箱的顶部排出。
本实施例湿法刻蚀设备的其他工作原理与第二实施例相同，此处不再重述。
在通常情况下，第一水洗单元SWR1的废水是直接排掉的。本实施例的优点在于：去除结晶效果好，循环使用湿法刻蚀设备排放的废水，无需消耗水资源，减少生产成本；缺点在于：结构较复杂，设计成本较高。
从长期效益看，第三实施例是最优选的。
需要说明的是，上述三个实施例均以草酸刻蚀溶液刻蚀ITO薄膜为例进行说明，但本发明并不以此为限。刻蚀液还可以为其他的易于产生结晶的刻蚀液，例如：以HNO3、CH3COOH或H3PO4为主要成分的，用于Al、Mo、Ag、氧化物(如ITO、IGZO等)刻蚀的刻蚀液、以H2O2为主要成分的Cu刻蚀液等。在这种情况下，可以采用纯水作为清洗液对刻蚀液结晶进行清洗。另外，也可以采用其他液体或在纯水中增加相应的效果增强成分，如NaOH，KOH等，以此作为清洗液对刻蚀液结晶进行清洗。即，本发明实施例中的清洗液可以是纯水，也可以是NaOH、KOH的水溶液。当然，该清洗液还可以是任何合适的碱性溶液，其成分视湿法刻蚀设备所使用的刻蚀液而定。
此外，在刻蚀腔的前端，还可以是除前缓冲腔之外的其他腔室。 同样，在刻蚀腔的后端，还可以是除后缓冲腔之外的其他腔室，同样能够适用本发明。
至此，已经结合附图对本发明三个实施例进行了详细描述。依据以上描述，本领域技术人员应当对本发明湿法刻蚀设备有了清楚的认识。
此外，上述对各元件和方法的定义并不仅限于实施例中提到的各种具体结构、形状或方式，本领域普通技术人员可对其进行简单地更改或替换，例如：除了上述实施例中的翻折类型的遮蔽门之外，其他类型的遮蔽门同样能够应用于本发明。此外，遮蔽门的翻折角度可以根据需要进行调整，而不严格局限于上文所述的90°。
综上所述，本发明通过对刻蚀腔的刻蚀腔入口和刻蚀腔出口处增加清洗液喷淋管，可以用较低的成本有效去除在刻蚀腔入口、出口处产生的大量刻蚀液结晶，提高设备稼动率，洁净度及产品质量，具有较高的推广应用价值。
需要说明的是，在附图或说明书描述中，相似或相同的部分都使用相同的图号。附图中未绘示或描述的实现方式，为所属技术领域中普通技术人员所知的形式。另外，虽然本文可提供包含特定值的参数的示范，但应了解，参数无需确切等于相应的值，而是可在可接受的误差容限或设计约束内近似于相应的值。实施例中提到的方向用语，例如“上”、“下”、“前”、“后”、“左”、“右”等，仅是参考附图的方向。因此，使用的方向用语是用来说明并非用来限制本发明的保护范围。
以上所述的具体实施例，对本发明的目的、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (17)

  1. 一种湿法刻蚀设备，其特征在于，包括：
    刻蚀腔，其具有位于前端的刻蚀腔入口和位于后端的刻蚀腔出口，其中在该刻蚀腔内，基片上的待刻蚀薄膜通过刻蚀液进行刻蚀；以及
    去结晶装置，其利用清洗液清洗在所述刻蚀腔入口和/或刻蚀腔出口处残留的刻蚀液或由所述刻蚀液形成的刻蚀液结晶。
  2. 根据权利要求1所述的湿法刻蚀设备，其特征在于，所述去结晶装置包括：
    清洗液喷淋管，其设置于所述刻蚀腔入口和/或刻蚀腔出口的下方，并且调适为朝向上方喷射清洗液，以清洗在刻蚀腔入口和/或刻蚀腔出口处残留的刻蚀液或由所述刻蚀液形成的刻蚀液结晶。
  3. 根据权利要求2所述的湿法刻蚀设备，其特征在于，还包括：
    相邻腔，其连接于所述刻蚀腔的前端或后端；以及
    遮蔽门，其通过一转轴安装于刻蚀腔入口或刻蚀腔出口，在基片通过时打开并且在其他时间关闭，
    其中，所述清洗液喷淋管设置于处于打开状态的遮蔽门的下方，以清洗遮蔽门上的刻蚀液或由所述刻蚀液形成的刻蚀液结晶。
  4. 根据权利要求3所述的湿法刻蚀设备，其特征在于：
    在闭合状态下，所述遮蔽门与基片行进的方向垂直，所述刻蚀腔的刻蚀腔入口和/或刻蚀腔出口关闭；以及
    在打开状态下，所述遮蔽门朝向相邻腔的方向翻折，所述刻蚀腔的刻蚀腔入口和/或刻蚀腔出口打开。
  5. 根据权利要求4所述的湿法刻蚀设备，其特征在于，所述清洗液喷淋管朝向上方喷射清洗液的高度与处于打开状态的遮蔽门平齐。
  6. 根据权利要求4所述的湿法刻蚀设备，其特征在于：
    所述清洗液喷淋管朝向上方连续不断地喷射清洗液。
  7. 根据权利要求4所述的湿法刻蚀设备，其特征在于：
    所述遮蔽门处于打开状态时，所述清洗液喷淋管朝向上方喷射清洗液；以及
    所述遮蔽门处于闭合状态时，所述清洗液喷淋管停止朝向上方喷射清洗液。
  8. 根据权利要求2所述的湿法刻蚀设备，其特征在于，所述清洗液喷淋管包括：
    清洗液喷淋管本体；以及
    多组孔，其分布于所述清洗液喷淋管本体上且取向为朝向上方的遮蔽门。
  9. 根据权利要求8所述的湿法刻蚀设备，其特征在于，所述孔的孔径介于2mm～5mm之间。
  10. 根据权利要求3所述的湿法刻蚀设备，其特征在于，
    所述相邻腔包括通过前遮蔽门与所述刻蚀腔连通的前缓冲腔和通过后遮蔽门与所述刻蚀腔连通的后缓冲腔；以及
    所述清洗液喷淋管包括前清洗液喷淋管，其安装于所述前缓冲腔内并且位于所述前遮蔽门的下方；以及后清洗液喷淋管，其安装于所述后缓冲腔内并且位于所述后遮蔽门的下方。
  11. 根据权利要求1所述的湿法刻蚀设备，其特征在于，所述刻蚀液为易于产生结晶的酸性刻蚀液，并且所述清洗液为纯水或碱性清洗液。
  12. 根据权利要求11所述的湿法刻蚀设备，其特征在于，所述酸性刻蚀液为草酸溶液、HNO3溶液、CH3COOH溶液或H3PO4溶液，并且所述碱性清洗液为NaOH、KOH的水溶液。
  13. 根据权利要求2所述的湿法刻蚀设备，其特征在于，所述去结晶装置还包括：
    清洗液供应管路，其为所述清洗液喷淋管供给清洗液；以及
    阀门，其设置于所述清洗液供应管路与所述清洗液喷淋管之间，调节清洗液供应管路内的压力以控制清洗液喷射的高度。
  14. 根据权利要求13所述的湿法刻蚀设备，其特征在于，所述清洗液供应管路与所述清洗液喷淋管之间设置有泵，该泵的控制信号与所述遮蔽门的控制信号同步。
  15. 根据权利要求14所述的湿法刻蚀设备，其特征在于，
    在遮蔽门打开时，泵同时打开，所述清洗液供应管路开始向清洗液喷淋管供给清洗液；以及
    在遮蔽门关闭时，泵同时关闭，所述清洗液供应管路停止向清洗液喷淋管供给清洗液。
  16. 根据权利要求13所述的湿法刻蚀设备，其特征在于，所述清洗液供应管路连接至厂务纯水管路。
  17. 根据权利要求13所述的湿法刻蚀设备，其特征在于，所述清洗液供应管路连接至水箱，该水箱由厂务纯水管路供水或由所述湿法刻蚀设备的水洗单元排放的废水来供水。
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