WO2016141664A1 - 消影结构、触摸屏及其制备方法 - Google Patents

消影结构、触摸屏及其制备方法 Download PDF

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WO2016141664A1
WO2016141664A1 PCT/CN2015/085030 CN2015085030W WO2016141664A1 WO 2016141664 A1 WO2016141664 A1 WO 2016141664A1 CN 2015085030 W CN2015085030 W CN 2015085030W WO 2016141664 A1 WO2016141664 A1 WO 2016141664A1
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layer
tin oxide
indium tin
silicon oxynitride
oxide layer
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PCT/CN2015/085030
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English (en)
French (fr)
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都智
胡明
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京东方科技集团股份有限公司
合肥鑫晟光电科技有限公司
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Priority to US15/121,447 priority Critical patent/US10198134B2/en
Publication of WO2016141664A1 publication Critical patent/WO2016141664A1/zh

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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0446Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412Digitisers structurally integrated in a display

Definitions

  • the invention relates to the field of display touch, in particular to a shadow elimination structure, a touch screen and a preparation method thereof.
  • an ITO (Indium Tin Oxide) layer is often used as a touch electrode layer, that is, an ITO layer is deposited on the glass, and a touch control layer is formed after etching, etching, and the like.
  • an insulating bridge, a metal conductive line, a protective layer, etc. are formed to form a touch sensor, such as an OGS structure (ie, glass/insulated frame/ITO or glass/insulated frame/sub-film layer/ITO) or G/ G structure (ie one piece of glass as a touch sensor and one piece of glass as a protective glass).
  • the problem is solved by depositing a single layer or a plurality of structures composed of a tantalum pentoxide film and a silicon dioxide film between the substrate and the electrode, but the effects are not satisfactory.
  • the result of the shadow elimination needs to be observed, it must be observed after the ITO layer is etched into a pattern, so that it takes a long time, and if there is a bad shadow, a large loss.
  • An object of the present invention is to provide a shadow elimination structure, a touch screen, and a preparation method thereof, which can effectively eliminate an etched pattern formed by etching an indium tin oxide layer to form a pattern.
  • Another object of the present invention is to provide a shadow elimination structure, a touch screen, and a method of fabricating the same that can improve the transmittance of the touch screen.
  • a subtractive structure for a pattern of an indium tin oxide layer comprising:
  • a silicon oxynitride layer disposed on the transparent substrate, the pattern of the indium tin oxide layer being disposed on the silicon oxynitride layer;
  • a silicon dioxide layer disposed on or above the pattern of the indium tin oxide layer.
  • the silicon oxynitride layer has a refractive index in the range of 1.47-2.0.
  • the pattern of the indium tin oxide layer includes a patterned region of an indium tin oxide layer and a non-patterned region, and a refractive index of the silicon oxynitride layer is based on a pattern in a pattern of the indium tin oxide layer The difference in reflectance between the chemical regions and the non-patterned regions is selected.
  • the refractive index of the silicon oxynitride layer is adjusted by adjusting the ratio of oxygen and nitrogen atoms therein during deposition.
  • the silicon dioxide layer is configured to protect the indium tin oxide layer.
  • a touch screen comprising the shadow elimination structure as described above.
  • the indium tin oxide layer and the silicon dioxide layer further include a first insulating protective layer, a metal layer, and a second insulating protective layer disposed in sequence.
  • the subtractive structure further includes a binding region, the bonding line in the bonding region passing the metal layer through a via hole penetrating the silicon dioxide layer and the second insulating protective layer Electrically connected to the flexible circuit board.
  • the touch screen further includes an insulating bezel on a transparent substrate.
  • a method of fabricating a touch screen including:
  • a via hole is formed in the silicon dioxide layer and the second insulating protective layer, and the metal layer is bonded to the flexible circuit board through the via hole through the bonding wire to form a touch screen.
  • the preparation method further includes:
  • the indium tin oxide layer has a patterned region and a non-patterned region by a photolithography process.
  • the silicon oxynitride layer is deposited in a temperature range of from 180 °C to 220 °C.
  • the preparation method further includes a pre-conditioning step of determining a refractive index of the silicon oxynitride layer and the silicon oxynitride layer according to a thickness of the indium tin oxide layer. And a thickness of the silicon dioxide layer such that a reflectance of the patterned region and the non-patterned region is close to or the same.
  • the step of forming a via includes etching to remove silicon dioxide and a second insulating protective paste in a region of the second silicon oxide layer and the second insulating protective layer corresponding to the via.
  • the preparation method before the depositing the silicon oxynitride layer, the preparation method further includes:
  • An insulating frame is formed on the transparent glass substrate.
  • Embodiments of the present invention provide a shadow elimination structure, a touch screen, and a method of fabricating the same, wherein the shadow elimination structure and the indium tin oxide layer constitute a silicon oxynitride layer/indium tin oxide layer/silicon dioxide layer structure, wherein each Each layer is a single layer. Since the silicon dioxide layer is deposited and formed by etching the indium tin oxide layer, an additional layer of protection can be provided for the indium tin oxide layer, which can effectively eliminate the etching trace caused by the pattern formed by the indium tin oxide layer etching. Obvious problems, and after depositing the indium tin oxide layer, the shadow elimination effect of the shadow elimination structure can be directly observed, so that the poor shadowing caused by the production can be found in time.
  • FIG. 1 is a schematic structural diagram of a shadow elimination structure according to an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of a method for preparing a touch screen according to an embodiment of the present invention
  • FIG. 3 is a comparison diagram of reflectances of a patterned region and a non-patterned region according to a first embodiment of the present invention
  • FIG. 4 is a comparison diagram of reflectances of a patterned region and a non-patterned region according to a second embodiment of the present invention.
  • FIG. 1 is a schematic structural diagram of a shadow elimination structure according to an embodiment of the present invention.
  • an embodiment of the present invention provides a shadow elimination structure for a pattern of an indium tin oxide layer, the image removal structure including A silicon oxynitride layer 3 on the substrate 1 is patterned or formed on the silicon oxynitride layer 3.
  • the shadow removing structure includes a silicon dioxide layer 8 on or above the pattern of the indium tin oxide layer 4 in addition to the silicon oxynitride layer 3 described above.
  • the meaning that the silicon dioxide layer is disposed on or above the pattern of the indium tin oxide layer means that the silicon dioxide layer is directly disposed on the indium tin oxide layer or is disposed between the silicon dioxide layer and the indium tin oxide layer.
  • There is an intermediate layer such as an insulating protective layer and/or a metal layer, but the silicon dioxide layer is located above the indium tin oxide layer as viewed from the side of the transparent substrate.
  • the pattern of the indium tin oxide layer 4 described herein includes a patterned region and a non-patterned region, or a structure in which the indium tin oxide layer 4 is patterned by a photolithography process.
  • the silicon oxynitride layer 3 is disposed under the indium tin oxide layer 4, since the refractive index of the silicon oxynitride layer 3 has a floating range, and the thickness thereof may vary depending on the thickness of the indium tin oxide layer 4. The change is such that the reflectance difference between the patterned region and the non-patterned region in the pattern of the indium tin oxide layer 4 can be effectively adjusted.
  • the silicon dioxide layer 8 is disposed over the indium tin oxide layer 4, which additionally provides a layer of protection to the touch screen sensor.
  • the image subtraction effect can be visually observed, and the visual effect by the etching trace can be effectively eliminated by the combination of the silicon oxynitride layer and the silicon dioxide layer. bad.
  • Embodiments of the present invention provide a shadow elimination structure, which is formed into a structure of a silicon oxynitride layer/indium tin oxide layer/silicon dioxide layer and an indium tin oxide layer. That is, a single layer of a silicon oxynitride layer and a silicon dioxide layer are formed under and above the indium tin oxide layer, respectively. Since the silicon dioxide layer is deposited by etching the indium tin oxide layer to form a pattern, an additional layer of protection can be provided for the indium tin oxide layer.
  • the refractive index of the silicon oxynitride layer 3 varies from 1.47 to 2.0.
  • the silicon oxynitride layer 3 can adjust the refractive index by adjusting the ratio of oxygen and nitrogen during deposition. Since the refractive index of the silicon oxynitride layer and the thickness of the silicon oxynitride layer and the silicon dioxide layer may vary with the thickness of the indium tin oxide layer, the indium tin oxide layer is formed in the pattern of the indium tin oxide layer after etching.
  • the reflectance of the patterned region and the non-patterned region can be adjusted to be very close or equal, so that the problem of etched lines caused by etching of the indium tin oxide layer can be effectively eliminated, and further on this basis Improve the transmittance of the touch screen.
  • the refractive index of the silicon oxynitride layer 3 can be any value in the range of 1.47-2.0, such as 1.64, 1.70, and the like. Additionally, means for adjusting the ratio of oxygen to nitrogen may be carried out using conventional techniques well known to those skilled in the art and will not be described in detail herein.
  • the anti-shadowing structure provided by the embodiment of the present invention can be used not only in the OGS structure, but also in the structure in which the pattern of the ITO layer is used as the conductive electrode.
  • the embodiment of the invention provides a touch screen, such as a capacitive touch screen, comprising the shadow elimination structure as described in the above embodiments.
  • Embodiments of the present invention provide a touch screen including the shadow elimination structure provided by the present invention. Since the shadow elimination structure can effectively eliminate the obvious problem of the etching texture, when the touch screen is applied to the touch screen provided by the embodiment of the present invention, the touch screen can obtain a good visual effect.
  • a first insulating protective layer (for example, a first insulating protective layer) is sequentially disposed between the indium tin oxide layer 4 and the silicon dioxide layer 8 in the subtractive structure.
  • a metal layer 6 and a second insulating protective layer (for example, a second insulating protective layer) 7.
  • the first insulating protective layer 5 can function as an insulating bridge;
  • the metal layer 6 can be formed with a bridge between the metal lead and the electrode;
  • the second insulating protective layer 7 can be used as a metal lead and bridge protection.
  • Floor for example, a first insulating protective layer
  • first insulating protective layer 5, the metal layer 6, and the second insulating protective layer 7 are necessary structures constituting the touch panel, and are well known to those skilled in the art, they are not described in detail in the present application. It should be noted that, in the present example, the first and second insulating protective layers 5 and 7 are each formed of an insulating protective paste.
  • a binding area is further included in the opaque structure, and a bonding line in the binding area passes through a via hole penetrating the silicon dioxide layer 8 and the second insulating protection layer 7
  • the metal layer 6 is electrically connected to the flexible circuit board.
  • the bridge between the metal lead and the electrode has been formed on the metal layer 6 as described above, the electrical connection of the metal layer 6 to the flexible circuit board can be realized by the via hole.
  • FIG. 2 is a schematic diagram of a method for preparing a touch screen according to an embodiment of the present invention. As shown in FIG. 2, an embodiment of the present invention provides a method for preparing a touch screen according to the above embodiments, including:
  • Forming a pattern of the indium tin oxide layer 4 on the silicon oxynitride layer 3 for example, by sputtering, photolithography, etching, development, etc.
  • a silicon dioxide layer 8 is formed (eg, deposited) on the second insulating protective layer 7, wherein the silicon oxynitride layer 3 and the silicon dioxide layer 8 form a shadow removing structure in this example;
  • the metal layer and the flexible circuit board are performed through the bonding wires. Bind to form a touch Screen.
  • the pattern of the anechoic structure and the indium tin oxide layer forms a structure of a silicon oxynitride layer 3 / an indium tin oxide layer 4 / a silicon dioxide layer 8, which is compared with other structures in the prior art.
  • the solution for example, the deposition of the indium tin oxide layer after the deposition of the shadow layer, because the subtractive structure provided by the present application is to deposit a silicon dioxide layer after the indium tin oxide layer is etched into a pattern, the touch screen sensor can be provided.
  • a protective layer can visually observe the shadow elimination effect after forming the pattern of the indium tin oxide layer, so that the shadow elimination caused by the production can be found in time.
  • Embodiments of the present invention provide a method for fabricating a touch panel, which is fabricated on a transparent substrate. Since the silicon dioxide layer is deposited by etching an indium tin oxide layer to form a pattern, indium tin oxide can be applied. The layer provides a layer of protection, which can effectively eliminate the obvious problem of etching lines caused by the indium tin oxide layer etching pattern, and can directly observe the shadow elimination structure after depositing the indium tin oxide layer. The effect can be found in time to produce poor shadowing in production. The method is simple in operation, and the touch screen prepared by the method can have a good visual effect.
  • the preparation method further includes: forming a pattern of the indium tin oxide layer 4.
  • the pattern of the indium tin oxide layer includes a patterned region and a non-patterned region; adjusting the refractive index of the silicon oxynitride layer 3, and the silicon oxynitride layer 3 and the silicon dioxide layer according to the thickness of the indium tin oxide layer 4
  • the thickness of 8 is such that the reflectance of the patterned region and the non-patterned region is close to or the same.
  • the thickness of the indium tin oxide layer 4 can be adjusted according to the production process.
  • the thickness of the indium tin oxide layer 4 is thicker and thicker, the problem that the transmittance of the product is correspondingly lowered is more likely to occur.
  • the main reason for the decrease in transmittance is due to the excessive difference in reflectance between the patterned regions and the non-patterned regions formed after the indium tin oxide layer 4 is etched. Therefore, the present embodiment improves the reflectance of the patterned and unpatterned regions on the indium tin oxide layer 4 by adjusting the refractive index of the silicon oxynitride layer 3 and the thicknesses of the silicon oxynitride layer 3 and the silicon dioxide layer 8.
  • this pre-conditioning step is performed before depositing the silicon oxynitride layer 3, the indium tin oxide layer 4 and the silicon dioxide layer 8 on the transparent substrate 1, that is, after the thickness of the indium tin oxide layer 4 is determined.
  • the refractive index of the silicon oxynitride layer 3 required to adjust the reflectance difference between the patterned region and the non-patterned region in the pattern of the indium tin oxide layer 4 to be small or even zero, and the silicon oxynitride layer 3 are obtained.
  • the thickness of the silicon dioxide layer 8, and then the silicon oxynitride layer, the indium tin oxide layer and the silicon dioxide layer are sequentially deposited on the transparent substrate according to the above parameters, thereby ensuring high transmittance of the touch panel.
  • the silicon oxynitride layer 3 is deposited in a temperature range of from 180 °C to 220 °C. In this embodiment, on the one hand, it is considered that the temperature of the insulating frame glue on the transparent substrate before depositing the silicon oxynitride layer 3
  • the performance is to deposit the silicon oxynitride layer 3 at a low temperature, i.e., at a temperature ranging from 180 °C to 220 °C, in consideration of the overall performance of the formed opaque structure.
  • the silicon oxynitride layer 3 is deposited at around 200 °C.
  • the preparation method further comprises: sequentially forming a first insulating protective layer 5 and a metal layer on the indium tin oxide layer 4. 6.
  • a first insulating protective layer 5 is formed on the patterned region by a photolithography process as an insulating bridge;
  • a metal layer 6 is sputter deposited on the first insulating protective layer 5, and after the deposition is completed, photolithography and etching are performed to form a bridge between the metal leads and the electrodes; then, a second insulating protective layer is formed on the metal layer 6 by a photolithography process. 7, as a protective layer of metal leads and bridges.
  • first insulating protective layer 5, the metal layer 6, and the second insulating protective layer 7 are necessary steps for fabricating the touch screen, and are well known to those skilled in the art, they are sequentially formed on the indium tin oxide layer 4.
  • the specific description of the first insulating protective layer 5, the metal layer 6, and the second insulating protective layer 7 will not be described in detail herein.
  • the method before depositing the silicon oxynitride layer 3, the method further comprises: forming an insulating frame 2 on the transparent glass substrate 1.
  • the insulating frame formed on the transparent glass substrate can be used as a light shielding layer to avoid light leakage caused by the shadow elimination structure.
  • an insulating frame 2 is formed on the glass substrate 1 as a light shielding layer; after the insulating frame 2 is formed, a silicon oxynitride layer 3 is deposited, and a medium frequency magnetron sputtering silicon oxynitride layer 3 is used, and the temperature resistance of the insulating frame 2 is considered.
  • the performance is low temperature deposition, the temperature is controlled at about 200 ° C, and the silicon oxynitride layer 3 having a refractive index of 1.70 is deposited by controlling the ratio of N 2 and O 2 to a thickness of 65 nm; after the silicon oxynitride layer 3 is deposited thereon, The indium tin oxide layer 4 is deposited by DC magnetron sputtering, and the indium tin oxide layer 4 has a refractive index of 1.92 and a thickness of 30 nm. After the deposition of the indium tin oxide layer 4, photolithography and etching are performed to form a patterned region and a non-patterned region.
  • a first insulating protective layer 5 is formed on the patterned region of the indium tin oxide layer 4 by a photolithography process as an insulating bridge; the metal layer 6 is deposited by DC magnetron sputtering, and photolithography and etching are formed after the deposition is completed.
  • a silicon dioxide layer 8 was deposited by medium frequency magnetron sputtering with a refractive index of 1.47 and a thickness of 65 nm.
  • a silicon dioxide etch paste is screen printed in the bonded region, and the metal layer 6 is bonded to a flexible circuit board (not shown) to form a touch screen after the silicon dioxide in the bonded region is etched away.
  • the reflectance of the patterned region and the non-patterned region formed on the indium tin oxide layer 4 is as shown in FIG.
  • an insulating frame 2 is formed on the glass substrate 1 as a light shielding layer; after the insulating frame 2 is formed, a silicon oxynitride layer 3 is deposited, and a medium frequency magnetron sputtering silicon oxynitride layer 3 is used, and the temperature resistance of the insulating frame 2 is considered.
  • the performance is low temperature deposition, the temperature is controlled at about 200 ° C, and the silicon oxynitride layer 3 having a refractive index of 1.64 is deposited by controlling the ratio of N 2 and O 2 to a thickness of 80 nm; after the silicon oxynitride layer 3 is deposited thereon, The indium tin oxide layer 4 is deposited by DC magnetron sputtering, and the indium tin oxide layer 4 has a refractive index of 1.92 and a thickness of 70 nm. After the deposition of the indium tin oxide layer 4 is completed, photolithography and etching are performed to form a patterned region and a non-patterned region.
  • a first insulating protective layer 5 is formed on the patterned region of the indium tin oxide layer 4 by a photolithography process as an insulating bridge; the metal layer 6 is deposited by DC magnetron sputtering, and photolithography and etching are formed after the deposition is completed.
  • a silicon dioxide layer 8 was deposited by medium frequency magnetron sputtering with a refractive index of 1.47 and a thickness of 70 nm.
  • the silicon dioxide etching paste is screen printed in the binding area, and the metal layer 6 is bound to the flexible circuit board after the silicon dioxide in the binding region is etched to form a touch screen.
  • the reflectance of the patterned region and the non-patterned region formed on the indium tin oxide layer 4 is as shown in FIG. 4 .
  • the average reflectance of the patterned region and the non-patterned region formed on the indium tin oxide layer 4 in Example 1 is less than 8%; the indium tin oxide layer in Embodiment 2
  • the average reflectance of the patterned regions and the non-patterned regions formed on 4 is less than 7%.

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Abstract

提供一种消影结构、触摸屏及其制备方法。消影结构用于氧化铟锡层的图形,消影结构包括设置在透明基板(1)上的氮氧化硅层(3),氧化铟锡层(4)的图形设置在氮氧化硅层(3)上,和二氧化硅层(8),二氧化硅层(8)设置在氧化铟锡层(4)的图形上或上方。

Description

消影结构、触摸屏及其制备方法
本申请要求于2015年03月11日递交的、申请号为201510106334.1、发明名称为“一种消影结构、触摸屏及其制备方法”的中国专利申请的优先权,其全部内容通过引用并入本申请中。
技术领域
本发明涉及显示触控领域,尤其涉及一种消影结构、触摸屏及其制备方法。
背景技术
目前,电容式触摸屏领域中所使用的主流结构中多以ITO(氧化铟锡)层作为触控电极层,即在玻璃上沉积一层ITO层,待光刻、蚀刻等工序后形成触控所需ITO电极图形后,再配上绝缘搭桥、金属导电线路,保护层等形成触控传感器,如OGS结构(即玻璃/绝缘边框/ITO或玻璃/绝缘边框/消影层/ITO)或G/G结构(即一片玻璃作为触摸传感器,一片玻璃作为保护玻璃)。
但是,在ITO层蚀刻形成图案化区和非图案化区后,由于二者的反射率差过大,使得蚀刻纹路较为明显,从而造成了视觉效果上的损失。为了解决上述问题,现有技术中多通过在基板和电极之间沉积单层的或多层的由五氧化二铌膜和二氧化硅膜组成的结构来解决此问题,但效果均不理想,并且,在这些解决方案的基础上,如果需观察消影结果,则必须在ITO层刻蚀成图形后才能观察,如此需耗费较长的时间,若出现消影不良,还会产生较大的损失。
因此,需要提供一种消影结构、触摸屏及其制备方法,其能够有效消除蚀刻纹路明显的问题。
发明内容
本发明的一个目的是提供一种消影结构、触摸屏及其制备方法,能够有效消除氧化铟锡层刻蚀形成图形后所形成的蚀刻纹。
本发明的另一目的是提供一种消影结构、触摸屏及其制备方法,其能够提高触摸屏的透过率。
根据本发明的一个方面,提供了一种用于氧化铟锡层的图形的消影结构,所述消影结构包括:
设置在透明基板上的氮氧化硅层,所述氧化铟锡层的图形设置在所述氮氧化硅层上;和
二氧化硅层,所述二氧化硅层设置在所述氧化铟锡层的图形上或上方。
在一个示例中,所述氮氧化硅层的折射率在1.47-2.0范围内。
在一个示例中,所述氧化铟锡层的图形包括氧化铟锡层的图案化区和非图案化区,所述氮氧化硅层的折射率被基于所述氧化铟锡层的图形中的图案化区和非图案化区的反射率差进行选择。
在一个示例中,所述氮氧化硅层的折射率被在沉积过程中通过调节其中的氧和氮原子的比例来调节。
在一个示例中,根据所述氧化铟锡层的厚度,确定所述氮氧化硅层的折射率、以及所述氮氧化硅层和所述二氧化硅层的厚度,使所述图案化区和所述非图案化区的反射率接近或相同。
在一个示例中,所述二氧化硅层配置用于保护所述氧化铟锡层。
根据本发明的另一方面,提供了一种触摸屏,包括如上所述的消影结构。
在一个示例中,所述氧化铟锡层和所述二氧化硅层之间还包括依次设置的第一绝缘保护层、金属层和第二绝缘保护层。
在一个示例中,所述消影结构还包括绑定区,所述绑定区中的绑定线通过贯穿所述二氧化硅层和所述第二绝缘保护层的过孔将所述金属层与柔性电路板电连接。
在一个示例中,所述触摸屏还包括在透明基板上的绝缘边框。
根据本发明的还一方面,提供了一种触摸屏的制备方法,包括:
提供一透明基板;
在所述透明基板上形成氮氧化硅层;
在所述氮氧化硅层上形成氧化铟锡层的图形;
在所述氧化铟锡层上依次形成第一绝缘保护层、金属层、第二绝缘保护层;
在所述第二绝缘保护层上沉积二氧化硅层,其中所述氮氧化硅层和二氧化硅层形成消影结构;
在所述二氧化硅层和第二绝缘保护层中形成过孔,通过绑定线穿过所述过孔将金属层与柔性电路板进行绑定,形成触摸屏。
在一个示例中,所述制备方法还包括:
通过光刻工艺使所述氧化铟锡层具有图案化区和非图案化区。
在一个示例中,在180℃-220℃的温度范围内沉积所述氮氧化硅层。
在一个示例中,所述的制备方法还包括预调节步骤,所述预调节步骤为根据所述氧化铟锡层的厚度,确定所述氮氧化硅层的折射率、以及所述氮氧化硅层和所述二氧化硅层的厚度,使所述图案化区和所述非图案化区的反射率接近或相同。
在一个示例中,所述形成过孔的步骤包括刻蚀除去第二氧化硅层和第二绝缘保护层中对应于所述过孔的区域中的二氧化硅和第二绝缘保护胶。
在一个示例中,在沉积所述氮氧化硅层之前,所述制备方法还包括:
在所述透明玻璃基板上制作绝缘边框。
本发明实施例提供了一种消影结构、触摸屏及其制备方法,所述消影结构和所述氧化铟锡层构成了氮氧化硅层/氧化铟锡层/二氧化硅层结构,其中每个层都为单层。由于二氧化硅层是在氧化铟锡层刻蚀形成图案后沉积形成,所以可给氧化铟锡层额外提供一层保护,可有效消除因氧化铟锡层刻蚀形成图形后所导致的蚀刻纹路明显的问题,并且,在沉积氧化铟锡层后还可直接观察消影结构的消影效果,从而可及时发现生产中所带来的消影不良。
附图说明
图1为本发明实施例提供的消影结构的结构示意图;
图2为本发明实施例提供的触摸屏制备方法的示意图;
图3为本发明具体实施例一提供的图案化区和非图案化区的反射率对比图;
图4为本发明具体实施例二提供的图案化区和非图案化区的反射率对比图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
下面结合附图对本发明实施例提供的消影结构、触摸屏及其制备方法进行详细描述。
图1为本发明的一个实施例提供的消影结构的结构示意图。如图1所示,本发明实施例提供了一种用于氧化铟锡层的图形的消影结构,所述消影结构包括设置在透 明基板1上的氮氧化硅层3,所述氧化铟锡层4的图形设置或形成在所述氮氧化硅层3上。
所述消影结构除包括上述的氮氧化硅层3之外还包括位于氧化铟锡层4的图形上或上方的二氧化硅层8。所述二氧化硅层设置在所述氧化铟锡层的图形上或上方的含义是指二氧化硅层直接设置在氧化铟锡层上或在二氧化硅层和氧化铟锡层之间还设置有诸如绝缘保护层和/或金属层的中间层,但是从透明基板一侧来看二氧化硅层位于氧化铟锡层的上方。
需要说明的是,此处所述的氧化铟锡层4的图形包括图案化区和非图案化区,或者说是指在通过光刻工艺使得氧化铟锡层4具有图形的结构。
在本实施例中,氮氧化硅层3设置在氧化铟锡层4的下方,由于氮氧化硅层3的折射率具有浮动范围,且其厚度可随着氧化铟锡层4的厚度的变化而变化,从而可对氧化铟锡层4的图形中图案化区和非图案化区的反射率差进行有效调节。而二氧化硅层8设置在氧化铟锡层4的上方,其可以额外给触摸屏传感器提供一层保护。
在本发明的示例中,在形成氧化铟锡4的图形之后,可直观观察到消影效果,并且还可以通过氮氧化硅层和二氧化硅层的组合有效消除蚀刻纹路所带来的视觉效果不良。
本发明实施例提供了一种消影结构,所述消影结构与氧化铟锡层形成为氮氧化硅层/氧化铟锡层/二氧化硅层的结构。也就是,在氧化铟锡层的下方和上方分别形成单层的氮氧化硅层和二氧化硅层。由于二氧化硅层是在氧化铟锡层刻蚀形成图案后沉积形成,所以可额外给氧化铟锡层提供一层保护。这样,可有效消除因氧化铟锡层刻蚀形成图形后所导致的蚀刻纹路明显的问题,并且,在沉积氧化铟锡层后还可直接观察到消影结构的消影效果,从而可及时发现生产中所带来的消影不良。
在本发明的一实施例中,氮氧化硅层3的折射率在1.47-2.0范围内变化。在本实施例中,氮氧化硅层3可在沉积过程中通过调节氧和氮的比例来调节折射率。由于氮氧化硅层的折射率以及氮氧化硅层和二氧化硅层的厚度可随氧化铟锡层厚度的变化而变化,使得氧化铟锡层蚀刻后所形成的氧化铟锡层的图形中的图案化区和非图案化区的反射率可调整为非常接近或相等,所以,可在有效消除因氧化铟锡层刻蚀形成图形后所导致的蚀刻纹路明显的问题,并且在此基础上进一步提高了触摸屏的透过率。可以理解的是,氮氧化硅层3的薄膜折射率可以为1.47-2.0范围内的任意值,例如1.64、1.70等。另外,调节氧和氮比例的手段可使用本领域技术人员所熟知的常规技术手段,此处不再详述。
需要说明的是,本发明实施例所提供的消影结构不仅仅可适用于OGS结构中,凡是采用ITO层的图形作为导电电极的结构,均可使用本发明实施例提供的消影结构。
本发明实施例提供了一种触摸屏,例如是电容式触摸屏,包括如上述实施例所述的消影结构。本发明实施例提供了一种触摸屏,包含本发明所提供的消影结构。由于消影结构能够有效消除蚀刻纹路明显的问题,使得在将其应用于本发明实施例所提供的触摸屏时,可使触摸屏获得良好的视觉效果。
在本发明的一实施例中,在所述消影结构中的氧化铟锡层4和二氧化硅层8之间还包括依次设置的第一绝缘保护层(例如第一绝缘保护胶层)5、金属层6和第二绝缘保护层(例如第二绝缘保护胶层)7。在本实施例中,第一绝缘保护层5可起到绝缘桥点的作用;金属层6可形成有金属引线和电极间连通的搭桥;第二绝缘保护层7可作为金属引线和搭桥的保护层。由于第一绝缘保护层5、金属层6和第二绝缘保护层7为组成触摸屏的必要结构,且为本领域技术人员所公知,所以不在本申请中详述。需要说明的是,在本示例中,第一和第二绝缘保护层5和7均由绝缘保护胶形成。
在本发明的一实施例中,在所述消影结构中还包括绑定区,所述绑定区中的绑定线通过贯穿二氧化硅层8和第二绝缘保护层7的过孔将金属层6与柔性电路板电连接。在本实施例中,由于如上所述在金属层6上已形成有金属引线和电极间连通的搭桥,这样就可通过过孔实现金属层6与柔性电路板的电连接。
图2为本发明实施例提供的触摸屏制备方法的示意图。如图2所示,本发明实施例提供了一种如上述实施例所述的触摸屏的制备方法,包括:
提供一透明基板1;
在透明基板1上沉积氮氧化硅层3;
在所述氮氧化硅层3上形成(例如通过溅射、光刻、刻蚀、显影等工序)氧化铟锡层4的图形;
在所述氧化铟锡层4的图形上依次形成第一绝缘保护层5、金属层6、第二绝缘保护层7;
在所述第二绝缘保护层7上形成(例如沉积)二氧化硅层8,其中在本示例中所述氮氧化硅层3和二氧化硅层8形成消影结构;
在刻蚀除去二氧化硅层和第二绝缘保护层中对应于所述消影结构的绑定区的二氧化硅和第二绝缘保护胶后,通过绑定线将金属层与柔性电路板进行绑定,形成触摸 屏。
在本实施例中,所述消影结构和氧化铟锡层的图形形成了氮氧化硅层3/氧化铟锡层4/二氧化硅层8的结构,该结构相比现有技术中的其他方案,例如在消影层沉积后再沉积氧化铟锡层而言,由于本申请所提供的消影结构是在氧化铟锡层蚀刻成图形后再沉积二氧化硅层,可以给触摸屏传感器多提供一层保护层。另外,本发明在形成氧化铟锡层的图形之后可直观观察到消影效果,从而可及时发现生产中所带来的消影不良。
本发明实施例提供了一种触摸屏的制备方法,在透明基板上制造所述的消影结构,由于二氧化硅层是在氧化铟锡层刻蚀形成图案后沉积形成,所以可给氧化铟锡层多提供一层保护,可有效消除因氧化铟锡层刻蚀形成图形后所导致的蚀刻纹路明显的间题,并且,在沉积氧化铟锡层后还可直接观察到消影结构的消影效果,从而可及时发现生产中所带来的消影不良。该方法操作简单,且由该方法制备得到的触摸屏可具有良好的视觉效果。
在本发明的一实施例中,在透明基板1上依次沉积氮氧化硅层3、氧化铟锡层4和二氧化硅层8之前,所述制备方法还包括:制造氧化铟锡层4的图形,所述氧化铟锡层的图形包括图案化区和非图案化区;根据氧化铟锡层4的厚度不同,调节氮氧化硅层3的折射率、以及氮氧化硅层3和二氧化硅层8的厚度,使所述图案化区和所述非图案化区的反射率接近或相同。
在本实施例中,可根据生产工艺的不同而调整氧化铟锡层4的厚度,当氧化铟锡层4的厚度越来越厚时,则较容易出现产品的透过率相应降低的问题。透过率降低的主要原因是由于氧化铟锡层4刻蚀后所形成的图案化区和非图案化区的反射率差过大造成的。所以,本实施例通过调节氮氧化硅层3的折射率、以及氮氧化硅层3和二氧化硅层8的厚度以将氧化铟锡层4上的图案化区和非图案化区的反射率差调节成较小甚至为零,从而使氧化铟锡层4具有较高的透过率。可以理解的是,这一预调节步骤在所述透明基板1上依次沉积氮氧化硅层3、氧化铟锡层4和二氧化硅层8之前进行,即在氧化铟锡层4的厚度确定后,得到将氧化铟锡层4的图形中的图案化区和非图案化区的反射率差调整为较小甚至为零时所需的氮氧化硅层3的折射率、以及氮氧化硅层3和二氧化硅层8的厚度,然后再根据上述参数在所述透明基板上依次沉积氮氧化硅层、氧化铟锡层和二氧化硅层,从而可确保触摸屏获得高透过率。
在本发明的一实施例中,在180℃-220℃的温度范围内沉积氮氧化硅层3。在本实施例中,一方面是考虑到在沉积氮氧化硅层3之前透明基板上的绝缘边框胶的耐温 性能,另一方面是考虑到所形成的消影结构的整体性能,所以选择在低温下,即在180℃-220℃的温度范围内沉积氮氧化硅层3。可选的,在200℃左右沉积氮氧化硅层3。
在本发明的一实施例中,在沉积氧化铟锡层4之后、二氧化硅层8之前,所述制备方法还包括:在氧化铟锡层4上依次形成第一绝缘保护层5、金属层6、第二绝缘保护层7。
在本实施例中,在氧化铟锡层4刻蚀形成图案化区和非图案化区后,在所述图案化区上通过光刻工艺形成第一绝缘保护层5,作为绝缘桥点;然后在第一绝缘保护层5上溅射沉积金属层6,待沉积完成后光刻、蚀刻形成金属引线和电极间连通的搭桥;然后,在金属层6上通过光刻工艺形成第二绝缘保护层7,作为金属引线和搭桥的保护层。可以理解的是,由于第一绝缘保护层5、金属层6、第二绝缘保护层7为制作触摸屏的必要步骤,且为本领域技术人员所公知,所以有关在氧化铟锡层4上依次形成第一绝缘保护层5、金属层6、第二绝缘保护层7的具体说明不再在此详述。
在本发明的一实施例中,在沉积氮氧化硅层3之前,所述方法还包括:在所述透明玻璃基板1上制作绝缘边框2。在本实施例中,在所述透明玻璃基板上制作的绝缘边框可作为遮光层,以避免所述消影结构产生的漏光现象。
下面将结合具体实施例进一步说明本申请所提供的消影结构、触摸屏及其制备方法。
实施例1
首先在玻璃基板1上光刻形成一层绝缘边框2作为遮光层;在形成绝缘边框2后沉积氮氧化硅层3,采用中频磁控溅射氮氧化硅层3,考虑绝缘边框2的耐温性能,采用低温沉积,温度控制在200℃左右,通过控制N2和O2比例沉积出折射率为1.70的氮氧化硅层3,厚度为65nm;待氮氧化硅层3沉积后,在其上采用直流磁控溅射沉积氧化铟锡层4,氧化铟锡层4折射率1.92,厚度为30nm,在氧化铟锡层4沉积完成后光刻、蚀刻后,形成图案化区和非图案化区;随后,在氧化铟锡层4的图案化区上通过光刻工艺形成第一绝缘保护层5,作为绝缘桥点;采用直流磁控溅射沉积金属层6,沉积完成后光刻、蚀刻形成金属引线和电极间连通的搭桥;在金属层6上通过光刻工艺形成第二绝缘保护层7,作为金属引线和搭桥的保护层。最后采用中频磁控溅射沉积二氧化硅层8,折射率为1.47,厚度为65nm。在绑定区丝网印刷二氧化硅蚀刻膏,待蚀刻掉绑定区的二氧化硅后将金属层6与柔性电路板(未示出)进 行绑定,形成触摸屏。其中,氧化铟锡层4上形成的图案化区和非图案化区的反射率如图3所示。
实施例2
首先在玻璃基板1上光刻形成一层绝缘边框2作为遮光层;在形成绝缘边框2后沉积氮氧化硅层3,采用中频磁控溅射氮氧化硅层3,考虑绝缘边框2的耐温性能,采用低温沉积,温度控制在200℃左右,通过控制N2和O2比例沉积出折射率为1.64的氮氧化硅层3,厚度为80nm;待氮氧化硅层3沉积后,在其上采用直流磁控溅射沉积氧化铟锡层4,氧化铟锡层4折射率1.92,厚度为70nm,待氧化铟锡层4沉积完成后光刻、蚀刻后,形成图案化区和非图案化区;随后,在氧化铟锡层4的图案化区上通过光刻工艺形成第一绝缘保护层5,作为绝缘桥点;采用直流磁控溅射沉积金属层6,沉积完成后光刻、蚀刻形成金属引线和电极间连通的搭桥;在金属层上通过光刻工艺形成第二绝缘保护层7,作为金属引线和搭桥的保护层。最后采用中频磁控溅射沉积二氧化硅层8,折射率为1.47,厚度为70nm。在绑定区丝网印刷二氧化硅蚀刻膏,待蚀刻掉绑定区的二氧化硅后将金属层6与柔性电路板进行绑定,形成触摸屏。其中,氧化铟锡层4上形成的图案化区和非图案化区的反射率如图4所示。
由图3和图4分别可示出,实施例1中的氧化铟锡层4上形成的图案化区和非图案化区的平均反射率低于8%;实施例2中的氧化铟锡层4上形成的图案化区和非图案化区的平均反射率低于7%。由此可知,本申请所提供的消影结构、触摸屏及其制备方法,不但可有效消除因图案化区和非图案化区的反射率差过大而导致的蚀刻纹路明显、视觉不良的问题,还可提高触摸屏的透过率。
显然,上述实施例仅仅是为清楚地说明所作的举例,而并非对实施方式的限定。对于所属领域的普通技术人员来说,在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本发明创造的保护范围。

Claims (16)

  1. 一种用于氧化铟锡层的图形的消影结构,所述消影结构包括:
    设置在透明基板上的氮氧化硅层,所述氧化铟锡层的图形设置在所述氮氧化硅层上;和
    二氧化硅层,所述二氧化硅层设置在所述氧化铟锡层的图形上或上方。
  2. 根据权利要求1所述的消影结构,其中,所述氮氧化硅层的折射率在1.47-2.0范围内。
  3. 根据权利要求2所述的消影结构,其中,所述氧化铟锡层的图形包括氧化铟锡层的图案化区和非图案化区,所述氮氧化硅层的折射率被基于所述氧化铟锡层的图形中的图案化区和非图案化区的反射率差进行选择。
  4. 根据权利要求3所述的消影结构,其中,所述氮氧化硅层的折射率被在沉积过程中通过调节其中的氧和氮原子的比例来调节。
  5. 根据权利要求3所述的消影结构,其中,根据所述氧化铟锡层的厚度,确定所述氮氧化硅层的折射率、以及所述氮氧化硅层和所述二氧化硅层的厚度,使所述图案化区和所述非图案化区的反射率接近或相同。
  6. 根据权利要求5所述的消影结构,其中,所述二氧化硅层配置用于保护所述氧化铟锡层。
  7. 一种触摸屏,包括如权利要求1-6中任一项所述的消影结构。
  8. 根据权利要求7所述的触摸屏,其中,所述氧化铟锡层和所述二氧化硅层之间还包括依次设置的第一绝缘保护层、金属层和第二绝缘保护层。
  9. 根据权利要求8所述的触摸屏,其中,所述消影结构还包括绑定区,所述绑定区中的绑定线通过贯穿所述二氧化硅层和所述第二绝缘保护层的过孔将所述金属层与柔性电路板电连接。
  10. 根据权利要求9所述的触摸屏,其中,所述触摸屏还包括在透明基板上的绝缘边框。
  11. 一种触摸屏的制备方法,包括:
    提供一透明基板;
    在所述透明基板上形成氮氧化硅层;
    在所述氮氧化硅层上形成氧化铟锡层的图形;
    在所述氧化铟锡层上依次形成第一绝缘保护层、金属层、第二绝缘保护层;
    在所述第二绝缘保护层上沉积二氧化硅层,其中所述氮氧化硅层和二氧化硅层形成消影结构;
    在所述二氧化硅层和第二绝缘保护层中形成过孔,通过绑定线穿过所述过孔将金属层与柔性电路板进行绑定,形成触摸屏。
  12. 根据权利要求11所述的制备方法,所述制备方法还包括:
    通过光刻工艺使所述氧化铟锡层具有图案化区和非图案化区。
  13. 根据权利要求11所述的制备方法,其中,在180℃-220℃的温度范围内沉积所述氮氧化硅层。
  14. 根据权利要求12所述的制备方法,还包括预调节步骤,所述预调节步骤为根据所述氧化铟锡层的厚度,确定所述氮氧化硅层的折射率、以及所述氮氧化硅层和所述二氧化硅层的厚度,使所述图案化区和所述非图案化区的反射率接近或相同。
  15. 根据权利要求11所述的制备方法,其中,所述形成过孔的步骤包括刻蚀除去第二氧化硅层和第二绝缘保护层中对应于所述过孔的区域中的二氧化硅和第二绝缘保护胶。
  16. 根据权利要求11所述的制备方法,其中,在沉积所述氮氧化硅层之前,所述制备方法还包括:
    在所述透明玻璃基板上制作绝缘边框。
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