WO2016125882A1 - Module photovoltaïque - Google Patents

Module photovoltaïque Download PDF

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Publication number
WO2016125882A1
WO2016125882A1 PCT/JP2016/053464 JP2016053464W WO2016125882A1 WO 2016125882 A1 WO2016125882 A1 WO 2016125882A1 JP 2016053464 W JP2016053464 W JP 2016053464W WO 2016125882 A1 WO2016125882 A1 WO 2016125882A1
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WO
WIPO (PCT)
Prior art keywords
copolymer
layer
resin
adhesive layer
film
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PCT/JP2016/053464
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English (en)
Japanese (ja)
Inventor
史陽 石村
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長州産業株式会社
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Publication of WO2016125882A1 publication Critical patent/WO2016125882A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a photovoltaic module.
  • photovoltaic module there is a type having a heterojunction photovoltaic element.
  • the heterojunction type photovoltaic device includes a first amorphous semiconductor film and a first conductive type second amorphous system on one surface side of a first conductive type (mainly n-type) crystalline semiconductor substrate.
  • a semiconductor film, a first translucent electrode film, and a first electrode are provided in this order.
  • the first amorphous semiconductor film is an intrinsic amorphous semiconductor film, or the first conductivity type amorphous system having an impurity concentration lower than that of the second amorphous semiconductor film. It is a semiconductor film.
  • the photovoltaic element has an intrinsic amorphous semiconductor film, a second conductive type (mainly p-type) amorphous semiconductor film, and a second light-transmitting electrode on the other surface side of the crystalline semiconductor substrate.
  • the membrane and the second electrode are provided in this order.
  • the photovoltaic module is bonded to one surface of the photovoltaic element via the first adhesive layer and a plurality of first fine wirings bonded and fixed to the first electrode on one surface of the photovoltaic element by the first adhesive layer. And a first resin film sandwiching a plurality of first fine wirings between one surface of the photovoltaic device, a translucent substrate, and between the translucent substrate and the first resin film And a filled first sealing layer. Further, the photovoltaic module includes a plurality of second fine wirings bonded and fixed to the second electrode on the other surface of the photovoltaic element by the second adhesive layer, and the other of the photovoltaic elements via the second adhesive layer.
  • a second resin film bonded to the surface and sandwiching a plurality of second fine wirings between the other surface of the photovoltaic element, a back sheet or a second translucent substrate, and a back sheet or first And a second sealing layer filled between the translucent substrate 2 and the second resin film.
  • Patent Document 1 describes an epoxy adhesive, an acrylic adhesive, a rubber adhesive, a silicon adhesive, and a polyvinyl ether adhesive as materials for the first adhesive layer.
  • the heterojunction photovoltaic device has an amorphous semiconductor film on both surfaces of a crystalline semiconductor substrate.
  • the amorphous semiconductor film is vulnerable to moisture and sodium. For this reason, when a material having an insufficient barrier property against moisture or sodium is used as the material of the sealing layer, the amorphous semiconductor film is deteriorated.
  • the material of the 1st contact bonding layer described in patent document 1 has very weak tolerance with respect to an ultraviolet-ray. For this reason, when using such a material, generally, the first adhesive layer is protected by including an ultraviolet absorber in the first sealing layer. However, when the first sealing layer contains an ultraviolet absorber, ultraviolet light cannot be effectively used for power generation.
  • the present invention has been made in view of the above problems, and provides a photovoltaic module that has a high degree of freedom in selecting a material for a sealing layer and can obtain better power generation efficiency.
  • a photovoltaic module comprising photovoltaic elements
  • the photovoltaic element is A first conductivity type crystalline semiconductor substrate;
  • An intrinsic third amorphous semiconductor film, a second conductivity type fourth amorphous semiconductor film, a second translucent electrode film, and a second electrode are formed on the other surface side of the crystalline semiconductor substrate.
  • the first amorphous semiconductor film is a first conductivity type having an impurity concentration lower than that of the second amorphous semiconductor film, or is intrinsic.
  • the photovoltaic module further includes A plurality of first fine wires bonded and fixed to the first electrode on one surface of the photovoltaic element by a first adhesive layer;
  • the first resin having the plurality of first fine wirings sandwiched between the one surface of the photovoltaic element and bonded to the one surface of the photovoltaic element via the first adhesive layer With film, A translucent first protective layer;
  • a plurality of second fine wires bonded and fixed to the second electrode on the other surface of the photovoltaic element by a second adhesive layer;
  • the second resin having the plurality of second fine wirings sandwiched between the other surface of the photovoltaic element and bonded to the other surface of the photovoltaic element via the second adhesive layer With film, A second protective layer;
  • the first adhesive layer provides a photovoltaic module configured of a resin material including any of the following (A) and (B).
  • the present invention it is possible to provide a photovoltaic module that has a high degree of freedom in selecting a material for the sealing layer and can obtain better power generation efficiency.
  • the photovoltaic module 100 includes a photovoltaic element 10.
  • the photovoltaic device 10 includes a first conductive type crystalline semiconductor substrate 11, a first amorphous semiconductor film 12 and a first conductive type second semiconductor film on one surface side of the crystalline semiconductor substrate 11.
  • the amorphous semiconductor film 13, the first translucent electrode film 14, and the first electrode 15 are provided in this order.
  • the photovoltaic element 10 further includes an intrinsic third amorphous semiconductor film 16, a second conductivity type fourth amorphous semiconductor film 17, and a second conductive film on the other surface side of the crystalline semiconductor substrate 11.
  • the translucent electrode film 18 and the second electrode 19 are provided in this order.
  • the first amorphous semiconductor film 12 is a first conductivity type having an impurity concentration lower than that of the second amorphous semiconductor film 13 or is intrinsic.
  • the photovoltaic module 100 further includes a plurality of first fine wirings 21 bonded and fixed to the first electrode 15 on one surface of the photovoltaic element 10 by the first adhesive layer 22, and one surface of the photovoltaic element 10.
  • the photovoltaic module 100 further includes a plurality of second fine wirings 51 bonded and fixed to the second electrode 19 on the other surface of the photovoltaic element 10 by the second adhesive layer 52, and the other surface of the photovoltaic element 10.
  • a second resin film 53 bonded to the other surface of the photovoltaic device 10 via the second adhesive layer 52, a second protective layer 70, And a second sealing layer 60 filled between the second protective layer 70 and the second resin film 53.
  • the 1st contact bonding layer 22 is comprised by the resin material containing either of the following (A) and (B).
  • B A copolymer containing ethylene and glycidyl (meth) acrylate is described in detail below.
  • the photovoltaic device 10 is a heterojunction photovoltaic device.
  • the conductivity type of each component of the photovoltaic element 10 will be described.
  • the crystalline semiconductor substrate 11 is, for example, n-type.
  • the second amorphous semiconductor film 13 is n-type
  • the first amorphous semiconductor film 12 is intrinsic or n ⁇ -type (n-type having a lower impurity concentration than the second amorphous semiconductor film 13).
  • the fourth amorphous semiconductor film 17 is p-type.
  • the crystal semiconductor substrate 11 is not particularly limited as long as it is a crystal having n-type semiconductor characteristics, and a known substrate can be used.
  • the n-type crystal semiconductor composing the crystalline semiconductor substrate 11 include SiC, SiGe, SiN and the like in addition to silicon (Si). Silicon is preferable from the viewpoint of productivity.
  • the crystalline semiconductor substrate 11 may be a single crystal or a polycrystal. Both surfaces (one surface and the other surface) of the crystalline semiconductor substrate 11 are preferably subjected to uneven processing (not shown) in order to make light confinement due to irregular reflection of light more effective. For example, by immersing the substrate material in an etching solution containing about 1 to 5% by weight of sodium hydroxide or potassium hydroxide, a large number of pyramidal irregularities can be formed.
  • the first amorphous semiconductor film 12, the second amorphous semiconductor film 13, the third amorphous semiconductor film 16, and the fourth amorphous semiconductor film 17 are each made of a silicon thin film. it can.
  • the first amorphous semiconductor film 12 is stacked on one surface of the crystalline semiconductor substrate 11 (upper surface in FIG. 1).
  • the second amorphous semiconductor film 13 is stacked on one surface (the upper surface in FIG. 1) of the first amorphous semiconductor film 12.
  • the total thickness of the first amorphous semiconductor film 12 and the second amorphous semiconductor film 13 is not particularly limited, but is preferably 1 nm to 20 nm, for example, and more preferably 4 nm to 10 nm. By setting the film thickness within such a range, it is possible to reduce the short-circuit current and the occurrence of carrier recombination in a well-balanced manner.
  • the first translucent electrode film 14 is stacked on one surface (the upper surface in FIG. 1) of the second amorphous semiconductor film 13.
  • the transparent electrode material constituting the first translucent electrode film 14 include indium tin oxide (ITO), tungsten-doped indium oxide (InWO), and cerium-doped indium oxide (ITO).
  • ITO indium tin oxide
  • ITO cerium-doped indium oxide
  • Well-known materials such as Indium Cerium Oxide (ICO), IZO (Indium Zinc Oxide), AZO (aluminum doped ZnO), and GZO (gallium doped ZnO) can be exemplified.
  • the third amorphous semiconductor film 16 is stacked on the other surface (the lower surface in FIG. 1) of the crystalline semiconductor substrate 11. In other words, the third amorphous semiconductor film 16 is interposed between the crystalline semiconductor substrate 11 and the fourth amorphous semiconductor film 17.
  • the film thickness of the third amorphous semiconductor film 16 is not particularly limited, but may be, for example, 1 nm or more and 10 nm or less.
  • the fourth amorphous semiconductor film 17 is laminated on one surface (the lower surface in FIG. 1) of the third amorphous semiconductor film 16.
  • the film thickness of the 4th amorphous semiconductor film 17 is not specifically limited, For example, 1 nm or more and 20 nm or less are preferable, and 3 nm or more and 10 nm or less are more preferable.
  • the second translucent electrode film 18 is laminated on one surface (the lower surface in FIG. 1) of the fourth amorphous semiconductor film 17.
  • the material constituting the second translucent electrode film 18 is the same as that of the first translucent electrode film 14.
  • intrinsic means that impurities are not intentionally doped. Therefore, the intrinsic amorphous semiconductor film includes impurities that are originally included in the raw material and impurities that are unintentionally mixed in the manufacturing process. Moreover, an amorphous system means that not only an amorphous body but a microcrystal body is included.
  • An n-type amorphous semiconductor film refers to a film containing impurities of about 10 ⁇ 5 or more relative to silicon as a number density ratio of elements contained in a thin film.
  • the first electrode 15 is, for example, a finger electrode, or a metal film formed on the entire surface of one surface (the upper surface in FIG. 1) of the first light-transmissive electrode film 14.
  • the second electrode 19 is, for example, a finger electrode or a metal film formed on the entire surface of one surface (the lower surface in FIG. 1) of the second translucent electrode film 18.
  • a conductive adhesive such as a silver paste or a metal conductor such as a copper wire can be used.
  • the width of the finger electrode is, for example, about 20 ⁇ m or more and 80 ⁇ m or less.
  • silver, a silver alloy, an aluminum alloy, or the like can be used as a material of the metal film constituting the first electrode 15 and the second electrode 19.
  • the plurality of first fine wirings 21 are, for example, a plurality of wires or bus bars arranged in parallel to each other.
  • the first fine wiring 21 has a core 21a and a low melting point metal film 21b coated on the surface of the core 21a.
  • the metal material of the core 21a include copper.
  • the metal material of the low melting point metal film 21b include an alloy of indium and tin.
  • the diameter of the first fine wiring 21 is preferably 100 ⁇ m or more and 400 ⁇ m or less, and more preferably 200 ⁇ m or more and 300 ⁇ m or less.
  • the second fine wiring 51 is configured in the same manner as the first fine wiring 21.
  • the 1st electrode 15 is a finger electrode
  • the some 1st fine wiring 21 is orthogonally crossed with the 1st electrode 15 (refer FIG. 2).
  • the second electrode 19 is a finger electrode
  • the plurality of second fine wirings 51 are orthogonal to the second electrode 19.
  • the first adhesive layer 22 is translucent.
  • the 1st contact bonding layer 22 is comprised with the resin material containing either of the following (A) and (B).
  • Examples of the copolymer of ethylene and unsaturated carboxylic acid include an ionomer of a copolymer of ethylene and unsaturated carboxylic acid.
  • the ionomer of the copolymer of ethylene and unsaturated carboxylic acid may contain a metal species derived from an alkali metal such as lithium or sodium, or a polyvalent metal such as calcium, magnesium, cerium, zinc or aluminum. it can. Among these, sodium, magnesium, and zinc are preferably used.
  • ionomers are known to have excellent transparency and a high storage elastic modulus E ′ at high temperatures.
  • the ionomer neutralization degree of the copolymer of ethylene and unsaturated carboxylic acid according to this embodiment is preferably 80% or less, and more preferably 60% or less from the viewpoint of adhesiveness. Most preferably, it is 40% or less.
  • the unsaturated carboxylic acid component in the ionomer of a copolymer of ethylene and an unsaturated carboxylic acid or a copolymer of ethylene and an unsaturated carboxylic acid includes acrylic acid, methacrylic acid, ethacrylic acid, fumaric acid, maleic acid, maleic acid. Examples thereof include monomethyl acid and maleic anhydride. Among these, (meth) acrylic acid is preferable as the unsaturated carboxylic acid component. Therefore, the ethylene / unsaturated carboxylic acid copolymer is preferably an ethylene / (meth) acrylic acid copolymer.
  • the ethylene / unsaturated carboxylic acid copolymer according to the present embodiment is not limited to a binary copolymer of ethylene and unsaturated carboxylic acid, but an ethylene / unsaturated carboxylic acid / unsaturated carboxylic acid ester copolymer. Also included are multicomponent copolymers containing ethylene and unsaturated carboxylic acids. Examples of the unsaturated carboxylic acid ester component in the ethylene / unsaturated carboxylic acid / unsaturated carboxylic acid ester copolymer include alkyl esters having 1 to 20 carbon atoms of various carboxylic acids used as the unsaturated carboxylic acid component described above. It is done.
  • alkyl group examples include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a 2-ethylhexyl group, and an isooctyl group.
  • the content of unsaturated carboxylic acid units such as (meth) acrylic acid units in the copolymer of ethylene and unsaturated carboxylic acid or its ionomer according to the present embodiment is preferable from the viewpoint of realizing excellent ultraviolet transparency. Is 2 wt% or more and 30 wt% or less, more preferably 9 wt% or more and 25 wt% or less, and most preferably 12 wt% or more and 20 wt% or less.
  • the content of the unsaturated carboxylic acid ester with respect to the total amount of the copolymer is preferably 1% by weight or more and 35% by weight or less, and preferably 3% by weight or more and 32% by weight or less. Is more preferable, and 5 to 30 weight% is further more preferable.
  • the content of the unsaturated carboxylic acid with respect to the total amount of the copolymer is preferably 1% by weight or more. % Or more, more preferably 3% by weight or more.
  • the content of the unsaturated carboxylic acid with respect to the total amount of the copolymer is preferably 20% by weight or less, and more preferably 15% by weight or less from the viewpoint of reducing hygroscopicity.
  • the content of the unsaturated carboxylic acid ester with respect to the total amount of the copolymer is 1% by weight or more from the viewpoint of improving the transparency and adhesiveness of the copolymer. Preferably, it is 3% by weight or more, more preferably 5% by weight or more.
  • the content of the unsaturated carboxylic acid ester with respect to the total amount of the copolymer is preferably 35% by weight or less, more preferably, from the viewpoint of reducing hygroscopicity. Is 32% by weight or less, more preferably 30% by weight or less.
  • the copolymer of ethylene and unsaturated carboxylic acid according to this embodiment can be obtained by performing a radical copolymerization reaction under high temperature and high pressure conditions. Further, an ionomer of a copolymer of ethylene and unsaturated carboxylic acid can be obtained by reacting a copolymer of ethylene and unsaturated carboxylic acid with a metal compound.
  • the glycidyl (meth) acrylate contained in the copolymer containing ethylene and glycidyl (meth) acrylate contained in the first adhesive layer 22 refers to at least one of glycidyl methacrylate or glycidyl acrylate.
  • the copolymer containing ethylene and glycidyl (meth) acrylate include ethylene / (meth) acrylic acid glycidyl copolymer, ethylene / (meth) acrylic acid glycidyl / vinyl acetate copolymer, and ethylene / (meta ) One or more selected from glycidyl acrylate / (meth) acrylic acid ester copolymer and the like.
  • the content ratio of the structural unit derived from glycidyl (meth) acrylate in the copolymer containing ethylene and glycidyl (meth) acrylate is preferably 2% by weight to 30% by weight, more preferably 3% by weight to 25%. % By weight or less.
  • the content ratio of the structural unit derived from glycidyl (meth) acrylate is within the above range, the balance of the adhesiveness, flexibility, handleability, workability, etc. of the obtained first adhesive layer 22 is further improved. It can be.
  • the content ratio of the “ethylene-derived structural unit” in the copolymer containing ethylene and glycidyl (meth) acrylate is preferably 65% by weight or more, more preferably 70% by weight or more, and particularly preferably 80% by weight or more. is there.
  • the copolymer containing ethylene and glycidyl (meth) acrylate further contains other monomer units (for example, vinyl acetate, (meth) acrylate ester, etc.) other than ethylene and glycidyl (meth) acrylate. Can do.
  • a composition derived from vinyl acetate in addition to these two structural units, a composition derived from vinyl acetate.
  • examples thereof include a copolymer containing at least one of a unit and a structural unit derived from a (meth) acrylic acid ester.
  • the content ratio of the structural unit derived from vinyl acetate and the structural unit derived from (meth) acrylic acid ester is preferably 30% by weight or less, and more preferably 20% by weight or less.
  • the lower limit of the content ratio of the structural unit derived from vinyl acetate and the structural unit derived from (meth) acrylic acid ester is not particularly limited, but is preferably 0.1% by weight or more, more preferably 0.5% by weight. More preferably, 1% by weight or more is desirable. Further, the content ratio of the structural unit derived from vinyl acetate or the structural unit derived from (meth) acrylic acid ester is preferably in the range of 0.1 to 30% by weight, more preferably 0.5 to 20% by weight, particularly 1 A range of ⁇ 20% by weight is preferred.
  • a copolymer containing ethylene and glycidyl (meth) acrylate is used alone or in combination of two or more of copolymers having different copolymerization ratios or two or more of copolymers having different monomer types. be able to.
  • At least a part of the copolymer containing ethylene and glycidyl (meth) acrylate may be modified with a silane coupling agent.
  • the content of the silane coupling agent is preferably 0.01 to 5% by weight in 100% by weight of the copolymer containing ethylene and glycidyl (meth) acrylate.
  • the first adhesive layer 22 only needs to contain one of the above (A) and (B), but the above-mentioned (A) and (B) are contained in 100% by weight of the resin component of the first adhesive layer 22.
  • ) In total is preferably 30% by weight or more, more preferably 40% by weight or more, and even more preferably 50% by weight or more.
  • the upper limit is not particularly limited, but when it contains (B), it is preferably 80% by weight or less, more preferably 60% by weight or less.
  • the resin material forming the first adhesive layer 22 may include other resins.
  • other resins include propylene-based resins and ethylene-based resins.
  • ethylene resins include ethylene / ⁇ -olefin copolymers and ethylene / polar monomer copolymers in which the content of structural units derived from ⁇ -olefins having 3 to 20 carbon atoms is 5 mol% or more and less than 50 mol%. Examples include coalescence.
  • ⁇ -olefin having 3 to 20 carbon atoms examples include propylene, 1-butene, 1-pentene, 1-hexene, 1-heptene, 1-octene, 1-nonene, 1-decene and 1-undecene.
  • Linear ⁇ -olefins such as 1-dodecene, 1-tridecene, 1-tetradecene, 1-pentadecene, 1-hexadecene, 1-heptadecene, 1-octadecene, 1-nanodecene, 1-eicocene;
  • Examples include branched ⁇ -olefins such as 1-butene, 3-methyl-1-pentene, 4-methyl-1-pentene, 2-ethyl-1-hexene, and 2,2,4-trimethyl-1-pentene. These can be used in combination of two types.
  • the number of carbon atoms of the ⁇ -olefin is preferably 3 to 10, more preferably 3 to 8 in view of versatility (cost, mass productivity, or availability).
  • the ethylene / ⁇ -olefin copolymer is preferably an ethylene / propylene copolymer, an ethylene / 1-butene copolymer, an ethylene / 4-methyl-1-pentene copolymer, or an ethylene / 1-hexene copolymer.
  • This is an ethylene / 1-octene copolymer, and any ethylene / ⁇ -olefin copolymer means that the content of the structural unit derived from ethylene is 50 mol% or more.
  • the ethylene / ⁇ -olefin copolymer can be produced by, for example, a slurry polymerization method, a solution polymerization method, a bulk polymerization method, or a gas phase polymerization method using a metallocene catalyst.
  • the ethylene / polar monomer copolymer examples include an ethylene / vinyl ester copolymer and an ethylene / unsaturated carboxylic acid ester copolymer.
  • the polar monomer means a monomer having a functional group.
  • the ethylene / vinyl ester copolymer is selected from, for example, an ethylene / vinyl acetate copolymer, an ethylene / vinyl propionate copolymer, an ethylene / vinyl butyrate copolymer, an ethylene / vinyl stearate copolymer, and the like. One kind or two or more kinds can be used.
  • the ethylene / unsaturated carboxylic acid ester copolymer according to this embodiment is a polymer obtained by copolymerizing ethylene and at least one unsaturated carboxylic acid ester.
  • a copolymer composed of ethylene and an alkyl ester of an unsaturated carboxylic acid can be exemplified.
  • the unsaturated carboxylic acid in the unsaturated carboxylic acid ester include acrylic acid, methacrylic acid, ethacrylic acid, crotonic acid, fumaric acid, maleic acid, maleic anhydride, itaconic acid, itaconic anhydride and the like.
  • alkyl moiety in the alkyl ester of the unsaturated carboxylic acid examples include those having 1 to 12 carbon atoms, and more specifically, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, secondary butyl. And alkyl groups such as 2-ethylhexyl and isooctyl.
  • the alkyl moiety of the alkyl ester preferably has 1 to 8 carbon atoms.
  • unsaturated carboxylic acid esters examples include methyl (meth) acrylate, ethyl (meth) acrylate, isopropyl (meth) acrylate, n-propyl (meth) acrylate, isobutyl (meth) acrylate, (meth) acrylic acid It is preferable to include one or more selected from (meth) acrylic acid esters such as n-butyl, isooctyl (meth) acrylate, and 2-ethylhexyl (meth) acrylate. These unsaturated carboxylic acid esters may be used alone or in combination of two or more.
  • a preferable ethylene / unsaturated carboxylic acid ester copolymer is an ethylene / (meth) acrylic acid ester copolymer.
  • a copolymer composed of one kind of compound is preferable as the (meth) acrylic acid ester.
  • examples of such copolymers include ethylene / methyl (meth) acrylate copolymer, ethylene / (meth) ethyl acrylate copolymer, ethylene / (meth) isopropyl acrylate copolymer, ethylene / (meth).
  • N-propyl acrylate copolymer ethylene / (meth) acrylate isobutyl copolymer, ethylene / (meth) acrylate n-butyl copolymer, ethylene / (meth) acrylate isooctyl copolymer, ethylene / ( And (meth) acrylic acid 2-ethylhexyl copolymer.
  • the ethylene / polar monomer copolymer includes ethylene / vinyl acetate copolymer, ethylene / (meth) methyl acrylate copolymer, ethylene / (meth) ethyl acrylate copolymer, ethylene / (meth) acrylate isopropyl copolymer.
  • the ethylene / polar monomer copolymer may be used alone or in combination of two or more. These other resins may be modified with a silane coupling agent.
  • the content of the silane coupling agent is preferably 0.01 to 5% by weight in 100% by weight of other resin components.
  • Examples of the resin material forming the first adhesive layer 22 include antioxidants such as hydroquinone monobenzyl ether and triphenyl phosphite, thermal stabilizers such as lead stearate and barium laurate, fine titanium oxide, Various additives such as fillers such as zinc oxide, pigments, dyes, lubricants, antiblocking agents, foaming agents, foaming aids, crosslinking agents, crosslinking aids, flame retardants, and the like may be blended.
  • the content of each component is preferably 0.005 to 2 parts by weight and more preferably 0.008 to 1 part by weight with respect to 100 parts by weight of the resin component in the first adhesive layer 22.
  • a metal fatty acid salt such as cadmium or barium may be arbitrarily blended as a discoloration preventing agent.
  • the light transmittance at a wavelength of 350 nm of the first adhesive layer 22 measured according to JIS-K7105 is 70% or more. By doing so, light energy derived from ultraviolet rays can be efficiently contributed to power generation.
  • light energy derived from ultraviolet rays refers to light energy derived from light in a wavelength region of less than 380 nm.
  • the light transmittance at a wavelength of 350 nm of the first adhesive layer 22 measured according to JIS-K7105 is preferably 75% or more, and more preferably 80% or more. By doing so, it becomes possible to more effectively contribute light energy derived from ultraviolet rays to power generation.
  • the layer thickness T (FIG. 3) of the first adhesive layer 22 can be, for example, 8 ⁇ m or more and 100 ⁇ m or less, and preferably 16 ⁇ m or more and 75 ⁇ m or less.
  • the layer thickness T of the first adhesive layer 22 is preferably set in a range of D / 6 ⁇ D / 12. That is, as an example, when the first fine wiring 21 is a wire having a diameter of 300 ⁇ m, the layer thickness T can be set to 25 ⁇ m or more and 75 ⁇ m or less.
  • the layer thickness T of the first adhesive layer 22 is a layer thickness in a range where the layer thickness of the first adhesive layer 22 is substantially constant in the interval between adjacent wires (see FIG. 3). ).
  • the 1st resin film 23 is formed with the material containing 1 or more selected from the group which consists of a fluororesin and an acrylic resin, for example.
  • the fluororesin include tetrafluoroethylene / ethylene copolymer (ETFE), tetrafluoroethylene / hexafluoropropylene copolymer (FEP), tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer (PFA), polychlorotriethylene.
  • EFE tetrafluoroethylene / ethylene copolymer
  • FEP tetrafluoroethylene / hexafluoropropylene copolymer
  • PFA tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer
  • PCTFE fluoroethylene
  • PCTFEE chlorotrifluoroethylene / ethylene copolymer
  • PVDF polyvinylidene fluoride
  • the acrylic resin include acrylic acid ester polymers and methacrylic acid ester polymers.
  • a methacrylic resin that is a polymer mainly composed of methyl methacrylate units is preferable.
  • the methacrylic resin include polymethyl methacrylate (PMMA), a copolymer of methyl methacrylate and another monomer, and the like.
  • the thickness of the 1st resin film 23 can be 5 micrometers or more and 100 micrometers or less (preferably 10 micrometers or more and 80 micrometers or less), for example.
  • the first sealing layer 30 is translucent.
  • the material of the first sealing layer 30 may be the same as that of the first adhesive layer 22, TPO (olefin elastomer), or silicon resin.
  • the layer thickness of the 1st sealing layer 30 can be 300 micrometers or more and 500 micrometers or less, for example.
  • the thickness of the first sealing layer 30 is set to be thicker than the protruding length of the first fine wiring 21 from the adhesive layer 22 (the protruding length to the first protective layer 40 side).
  • the surface of the first protective layer 40 on the first sealing layer 30 side may be embossed. In that case, it is preferable to fill the unevenness of the embossment in the first protective layer 40 with the first sealing layer 30. For this reason, it is preferable that the thickness of the first sealing layer 30 has at least a thickness obtained by adding the height of the unevenness of the emboss to the protruding length of the first fine wiring 21 from the adhesive layer 22.
  • the first protective layer 40 is a translucent substrate.
  • Examples of the material of the first protective layer 40 include glass, acrylic resin, polycarbonate, polyester, fluorine-containing resin, and the like.
  • the second protective layer 70 may be a translucent substrate similar to the first protective layer 40, or may be a non-translucent (eg, light reflective) backsheet.
  • the back sheet for example, a single-layer or multi-layer sheet formed of a metal such as tin, aluminum, and stainless steel, an inorganic material such as glass, a polyester, an inorganic vapor-deposited polyester, a fluorine-containing resin, and a thermoplastic resin such as polyolefin. Is mentioned.
  • the photovoltaic module 100 can receive light on both sides (the first protective layer 40 side and the second protective layer 70 side).
  • the second adhesive layer 52 can be made of the same material as the first adhesive layer 22.
  • the second resin film 53 can be made of the same material as the first resin film 23.
  • the second sealing layer 60 can be made of the same material as the first sealing layer 30. However, when light reception on both sides is not necessary, the second sealing layer 60 may contain a pigment or the like as described later.
  • the light receiving surface of the photovoltaic module 100 is one side (the first protective layer 40 side).
  • the material of the second adhesive layer 52 can be the same resin material as that of the first adhesive layer 22.
  • the material of the second sealing layer 60 when the second protective layer 70 is a non-translucent backsheet may be the same as that of the first sealing layer 30, but in this case, the second sealing layer 60 Since the stop layer 60 is not required to be transparent, it is preferable to blend a pigment, a dye, and an inorganic filler from the viewpoint of improving the power generation efficiency.
  • the pigment examples include white pigments such as titanium oxide and calcium carbonate, blue pigments such as ultramarine, and black pigments such as carbon black.
  • blending an inorganic pigment such as titanium oxide is preferable from the viewpoint of preventing the insulation resistance of the photovoltaic module 100 from being lowered.
  • the blending amount of the inorganic pigment is preferably 0 parts by weight or more and 100 parts by weight or less, more preferably 0.5 parts by weight or more with respect to 100 parts by weight of the resin component contained in the second sealing layer 60. 50 parts by weight or less, and most preferably 4 parts by weight or more and 50 parts by weight or less.
  • the material of the second resin film 53 when the second protective layer 70 is a non-translucent back sheet may be the same as that of the first resin film 23 or may be other resin materials.
  • the second adhesive layer 52 can have the same thickness as the first adhesive layer 22. That is, when the second fine wiring 51 is a wire having a diameter D, the layer thickness T of the second adhesive layer 52 is preferably set in a range of D / 6 ⁇ D / 12. That is, as an example, when the second fine wiring 51 is a wire having a diameter of 300 ⁇ m, the layer thickness T can be set to 25 ⁇ m or more and 75 ⁇ m or less.
  • the second resin film 53 can have the same thickness as the first resin film 23.
  • the second protective layer 70 may be a hard substrate such as a glass substrate, or may be a flexible resin sheet.
  • the second adhesive layer 52 can have the same thickness as the first adhesive layer 22.
  • the second protective layer 70 is a flexible resin sheet, even if the second fine wiring 51 protrudes on the back surface side (the lower side in FIG. 1) of the second sealing layer 60, The second protective layer 70 can be deformed along the protruding portion of the second fine wiring 51 (the surface of the second protective layer 70 has a shape reflecting the protruding portion of the second fine wiring 51).
  • the second protective layer 70 can suitably protect the back surface of the photovoltaic module 100 while being in close contact with the second sealing layer 60 and the second fine wiring 51. For this reason, when the second protective layer 70 is a flexible resin sheet, the second sealing layer 60 can be made thinner than the first sealing layer 30. Even when the second protective layer 70 is a flexible resin sheet, it is needless to say that the thickness of the second sealing layer 60 may be equal to the thickness of the first sealing layer 30.
  • the photovoltaic module 100 is normally used by connecting a plurality in series. By using a plurality of photovoltaic modules 100 connected in series, the generated voltage can be increased.
  • the first amorphous semiconductor film 12, the second amorphous semiconductor film 13, and the first light-transmissive electrode film 14 are arranged in this order on one surface of the crystalline semiconductor substrate 11.
  • the third amorphous semiconductor film 16, the fourth amorphous semiconductor film 17, and the second translucent electrode film 18 are formed in this order on the other surface of the crystalline semiconductor substrate 11.
  • the first electrode 15 is formed on one surface (the upper surface in FIG. 1) of the first light-transmissive electrode film 14, and the first surface (the lower surface in FIG. 1) of the second light-transmissive electrode film 18. It is obtained by forming the second electrodes 19 respectively.
  • a first wiring sheet (see the wiring sheet 200 shown in FIGS. 4 and 5) in which the first resin film 23, the first adhesive layer 22, and the first fine wiring 21 are integrated, and the first protection.
  • a layer 40 and a sheet-like first sealing layer 30 are prepared.
  • the wiring sheet 200 includes a resin film (the first resin film 23 or the second resin film 53) and an adhesive layer (the first adhesive layer 22 or the second adhesive layer 52) laminated on each other, and the resin film side in the adhesive layer.
  • the fine wiring is preferably a plurality of wires arranged in parallel to each other, and in this way, the amount of the metal material used for forming the fine wiring is reduced. Can be reduced.
  • the resin film is formed of a material including one or more selected from the group consisting of a fluororesin and an acrylic resin.
  • the thickness of the resin film is preferably 5 ⁇ m or more and 100 ⁇ m or less, and more preferably 10 ⁇ m or more and 80 ⁇ m or less.
  • the first resin film 23 disposed on the light receiving surface side preferably has a light transmittance of 70% or more at a wavelength of 350 nm measured according to JIS-K7105. . By doing so, it is possible to realize a module capable of efficiently contributing to the power generation by light energy derived from ultraviolet rays.
  • the second resin film 53 preferably has a light transmittance at a wavelength of 350 nm measured in accordance with JIS-K7105 of 70% or more. By doing so, it is possible to realize a module capable of efficiently contributing to the power generation by light energy derived from ultraviolet rays.
  • the first wiring sheet is interposed between the first electrode 15 on one side of the photovoltaic element 10 and the first protective layer 40, and between the first wiring sheet and the first protective layer 40.
  • the first sealing layer 30 is interposed.
  • a second wiring sheet (see the wiring sheet 200 shown in FIGS. 4 and 5) in which the second resin film 53, the second adhesive layer 52, and the second fine wiring 51 are integrated, and the second protective layer 70.
  • a sheet-like second sealing layer 60 are prepared.
  • the second wiring sheet is interposed between the second electrode 19 on the other surface of the photovoltaic element 10 and the second protective layer 70, and the second wiring sheet is interposed between the second wiring sheet and the second protective layer 70.
  • Two sealing layers 60 are interposed.
  • the first fine wiring 21 is welded to the first electrode 15 via the first adhesive layer 22 and the first sealing layer 30 is interposed.
  • the first resin film 23 and the first protective layer 40 are welded, the second fine wiring 51 is welded to the second electrode 19 through the second adhesive layer 52, and the second sealing layer 60 is used.
  • the second resin film 53 and the second protective layer 70 are welded.
  • the core 21 a and the first electrode 15 are welded by melting the low melting point metal film 21 b on the surface layer of the first fine wiring 21.
  • the low melting point metal film (not shown) on the surface layer of the second fine wiring 51 is melted, so that the core (not shown) of the second fine wiring 51 and the second electrode 19 are welded.
  • the photovoltaic module 100 can be obtained.
  • the wiring sheet 200 having the structure shown in FIG. 4 is used as the first wiring sheet and the second wiring sheet has been described, but the structure shown in FIG. 6 is used as the first wiring sheet and the second wiring sheet.
  • the wiring sheet 200 may be used.
  • a resin film (first resin film 23, second resin film 53) is prepared separately from the wiring sheet 200 (first wiring sheet, second wiring sheet).
  • the first The layer thickness T (FIG. 3) of the one adhesive layer 22 is preferably set in a range of D / 6 ⁇ D / 12.
  • the layer thickness T is preferably in the range of 50 ⁇ m ⁇ 25 ⁇ m.
  • the first resin film 23 can be bonded to the first electrode 15 with sufficient adhesive strength by the first adhesive layer 22.
  • the layer thickness T of the first adhesive layer 22 is set to D / 6 ⁇ D / 12 or more, reliability is reduced due to the formation of voids (cavities) around the first fine wiring 21. Can be suppressed.
  • the layer thickness T of the second adhesive layer 52 is D / 6. It is preferable to be set within a range of ⁇ D / 12. By doing so, it is possible to suppress the floating of the second fine wiring 51 from the second electrode 19, and more reliably weld the second fine wiring 51 to the second electrode 19, and the second resin.
  • the film 53 can be adhered to the second electrode 19 with sufficient adhesive strength by the second adhesive layer 52.
  • the layer thickness T of the second adhesive layer 52 to be equal to or greater than D / 6-D / 12, it is possible to suppress a decrease in reliability due to the formation of voids around the second fine wiring 51. Can do.
  • the copolymer including the heterojunction photovoltaic element 10 and the first adhesive layer 22 includes (A) ethylene and an unsaturated carboxylic acid. Or an ionomer of the above copolymer and (B) a resin material containing either a copolymer containing ethylene and glycidyl (meth) acrylate.
  • said (A) and (B) have the characteristic that a moisture permeability is low. For this reason, even if a material having a relatively high moisture permeability is selected as the first protective layer 40, the second amorphous semiconductor film 13 and the first amorphous semiconductor are formed by the first adhesive layer 22.
  • the membrane 12 can be protected from moisture.
  • the sodium component contained in the first protective layer 40 can also be prevented from migrating to the second amorphous semiconductor film 13 and the first amorphous semiconductor film 12 side together with moisture. For this reason, the freedom degree of selection of the material of the 1st sealing layer 30 becomes high. Further, (A) a copolymer containing ethylene and an unsaturated carboxylic acid, or an ionomer of the above copolymer and (B) a copolymer containing ethylene and glycidyl (meth) acrylate have good resistance to ultraviolet rays. . Therefore, even when the first sealing layer 30 does not substantially contain the ultraviolet absorber, it is possible to ensure good resistance of the first adhesive layer 22. For this reason, since ultraviolet light can be used effectively for power generation, better power generation efficiency can be obtained.
  • the copolymer in the resin material (resin material containing a copolymer of ethylene and unsaturated carboxylic acid) constituting the first adhesive layer 22 is an ionomer, good transparency of the first adhesive layer 22; Since the ultraviolet resistance and the low transmittance of moisture can be realized, the above-described effects can be obtained more reliably.
  • the light transmittance at a wavelength of 350 nm of the first adhesive layer 22 measured according to JIS-K7105 is set to 70% or more, light energy derived from ultraviolet rays can be efficiently contributed to power generation. Therefore, good power generation efficiency of the photovoltaic module 100 can be obtained.
  • the light transmittance is more preferably 75% or more, and more preferably 80% or more.
  • the light transmittance at a wavelength of 350 nm of the first sealing layer 30 measured according to JIS-K7105 can be set to 70% or more. Good power generation efficiency can be obtained.
  • This light transmittance is also preferably 75% or more, and more preferably 80% or more.
  • the layer thickness T of the first adhesive layer 22 is D / 6 ⁇ D. / 12 can be set.
  • the first fine wiring 21 can be more securely welded to the first electrode 15 by suppressing the floating of the first fine wiring 21 from the first electrode 15.
  • the first resin film 23 can be bonded to the first electrode 15 with sufficient adhesive strength by the first adhesive layer 22.
  • the second adhesive layer 52 is made of (A) a copolymer containing ethylene and an unsaturated carboxylic acid, or the above copolymer, as with the first adhesive layer 22. It can be constituted by a resin material containing either a polymer ionomer or a copolymer containing (B) ethylene and glycidyl (meth) acrylate. By doing so, the same effect as that of the first adhesive layer 22 is obtained by the second adhesive layer 52. That is, even if a material having a relatively high moisture permeability is selected as the second protective layer 70, the fourth amorphous semiconductor film 17 and the third amorphous semiconductor film are formed by the second adhesive layer 52.
  • the copolymer in the resin material (resin material containing a copolymer of ethylene and unsaturated carboxylic acid) constituting the second adhesive layer 52 is an ionomer, good transparency of the second adhesive layer 52, Since the ultraviolet light resistance and the low moisture transmittance can be realized, the above-described effects can be obtained more reliably.
  • the light transmittance at a wavelength of 350 nm of the second adhesive layer 52 measured in accordance with JIS-K7105 for the second adhesive layer 52 is 70% or more, light energy derived from ultraviolet rays contributes to power generation efficiently. Therefore, good power generation efficiency of the photovoltaic module 100 can be obtained.
  • This light transmittance is also preferably 75% or more, and more preferably 80% or more.
  • the light transmittance at a wavelength of 350 nm of the second protective layer 70 measured according to JIS-K7105 can be set to 70% or more. Power generation efficiency can be obtained.
  • This light transmittance is also preferably 75% or more, and more preferably 80% or more.
  • each component of the photovoltaic device 10 may be reversed from the above example.
  • Example 1 The photovoltaic module according to Example 1 was manufactured by the following method. A light-transmitting substrate (first protective layer), a first sealing layer (using a resin sheet 1 described later), a first wiring sheet (using a wiring sheet 1 described later), and a photovoltaic element were stacked in this order. Furthermore, on the photovoltaic element, a second wiring sheet (using a wiring sheet 1 described later), a second sealing layer (using a resin sheet 3 described later), and a back sheet (second protective layer) in this order. These were stacked and laminated using a vacuum laminator to produce a photovoltaic module.
  • first protective layer A light-transmitting substrate (first protective layer), a first sealing layer (using a resin sheet 1 described later), a first wiring sheet (using a wiring sheet 1 described later), and a photovoltaic element were stacked in this order. Furthermore, on the photovoltaic element, a second wiring sheet (using a wiring sheet 1 described later), a second sealing layer (using a resin sheet 3 described
  • Comparative Example 1 The photovoltaic module according to Comparative Example 1 uses the resin sheet 4 described later as the first sealing layer and the second sealing layer, and uses the wiring sheet 2 described later as the first wiring sheet and the second wiring sheet, respectively. Except that, the photovoltaic power generation module according to Example 1 was produced.
  • Examples 2 to 5 Each was produced in the same manner as the photovoltaic module according to Example 1, except that wiring sheets 3 to 6 described later were used as the first wiring sheet and the second wiring sheet, respectively.
  • a base sheet (corresponding to a first resin film or a second resin film) formed of tetrafluoroethylene / ethylene copolymer (ETFE) having a thickness of 25 ⁇ m, and a thickness formed on one surface of the base sheet
  • EFE tetrafluoroethylene / ethylene copolymer
  • a metal micro-wiring with a diameter of 300 ⁇ m is arranged at equal intervals on the surface of the sheet having a thickness of 75 ⁇ m resin sheet 2 (which will be described later: corresponding to the first adhesive layer or the second adhesive layer) and thermocompression-bonded.
  • the wiring sheet 2 was produced by heat-pressing the metal fine wiring with a diameter of 300 micrometers on the surface of the resin sheet 4 (after-mentioned) with a thickness of 100 micrometers, arranging it at equal intervals. In the obtained wiring sheet 2, wires were embedded in the resin sheet 4.
  • ⁇ Wiring sheet 3> Instead of using the sheet obtained by bonding the resin sheet 5 having a thickness of 60 ⁇ m to one side of the sheet formed of polymethyl methacrylate (PMMA) having a thickness of 50 ⁇ m instead of the resin sheet 2 Produced a wiring sheet 3 in the same manner as in Example 1. In the obtained wiring sheet 3, a wire was embedded in the resin sheet 5.
  • PMMA polymethyl methacrylate
  • ⁇ Wiring sheet 4> Instead of using the sheet obtained by bonding the resin sheet 6 having a thickness of 60 ⁇ m to one side of the sheet formed of polymethyl methacrylate (PMMA) having a thickness of 50 ⁇ m instead of the resin sheet 2 In the same manner as in Example 1, a wiring sheet 4 was produced. In the obtained wiring sheet 4, the wire was embedded in the resin sheet 6.
  • PMMA polymethyl methacrylate
  • ⁇ Wiring sheet 5> In place of the resin sheet 2, except that a sheet obtained by bonding a resin sheet 7 having a thickness of 60 ⁇ m to one side of a sheet formed of polymethyl methacrylate (PMMA) having a thickness of 50 ⁇ m was used. In the same manner as in Example 1, a wiring sheet 5 was produced. In the obtained wiring sheet 5, the wire was embedded in the resin sheet 7.
  • PMMA polymethyl methacrylate
  • ⁇ Wiring sheet 6> Instead of using the sheet obtained by adhering the resin sheet 8 having a thickness of 60 ⁇ m to one side of the sheet formed of polymethyl methacrylate (PMMA) having a thickness of 50 ⁇ m instead of the resin sheet 2 In the same manner as in Example 1, a wiring sheet 6 was produced. In the obtained wiring sheet 6, wires were embedded in the resin sheet 8.
  • PMMA polymethyl methacrylate
  • Each of the resin sheets 1 to 8 includes an A layer ((A) -1, (A) -2, (A) -3, (A) -4, (A) -5 or (A) -6) described later).
  • the resin sheet 1 is a three-layer sheet, and has a structure in which a surface layer (A) -1, an intermediate layer (B) -1, and a surface layer (A) -1 are laminated in this order. It has become.
  • the resin sheet 2 is a single-layer sheet and is configured by (A) -1.
  • the resin sheet 3 is a three-layer sheet having a structure in which the surface layer (A) -2, the intermediate layer (B) -2, and the surface layer (A) -2 are laminated in this order. It has become.
  • the resin sheet 5 is a single-layer sheet and is made of (A) -3.
  • the resin sheet 6 is a single-layer sheet and is configured by (A) -4.
  • the resin sheet 7 is a single layer sheet, and is constituted by (A) -5.
  • the resin sheet 8 is a single layer sheet and is constituted by (A) -6.
  • Additive- Antioxidant Pentaerythritol tetrakis [3- (3,5-di-tert-butyl-4-hydroxyphenyl) propionate] (manufactured by BASF, Irganox 1010)
  • UV absorber 2- (2H-benzotriazol-2-yl) -4,6-di-tert-pentylphenolLight stabilizer: bis (2,2,6,6, -tetramethyl-4-piperidyl )
  • Sebacate silane coupling agent N- (2-aminoethyl) -3-aminopropylmethyldimethoxysilane
  • the same resin as the resin for each layer, the antioxidant, the ultraviolet absorber, and the light stabilizer are resin / antioxidant / ultraviolet absorber.
  • / Light stabilizer 93.7 / 0.3 / 4/2
  • the weight ratio of the mixture was used and the mixture was extruded in advance with a biaxial extruder.
  • a weight ratio of 96/2/2 was used and the mixture was previously extruded by a twin screw extruder.
  • a white masterbatch PE-M 13N4700 manufactured by Dainichi Seika Kogyo Co., Ltd., an antioxidant, an ultraviolet absorber, and a light stabilizer are mixed in a predetermined weight ratio, and a twin-screw extruder is prepared in advance. What was produced in (1) was used.
  • the stabilizer masterbatch 3 used for the layer A includes an ethylene / ⁇ -olefin copolymer (Tafmer A-4090S manufactured by Mitsui Chemicals) as a base resin, an antioxidant, and a light stabilizer. Antioxidants / light stabilizers were mixed at a weight ratio of 96/2/2, and those prepared in advance by a twin screw extruder were used.
  • EVA1 Ethylene / glycidyl methacrylate / vinyl acetate copolymer (EGMAVA, manufactured by Sumitomo Chemical Co., Ltd., Bondfast 7B, ethylene content: 83 wt%, glycidyl methacrylate content: 12 wt%, vinyl acetate content: 5 wt% %, MFR (190 ° C., 2160 g load): 7 g / 10 min): 49.1 parts by weight, ethylene / vinyl acetate copolymer (vinyl acetate content: 10% by weight): 49.1 parts by weight, 3-methacrylic acid Roxypropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd., trade name “KBM503”): 1.5 parts by weight and 2,5-dimethyl-2,5-di (t-butylperoxy) hexane (Arkema Yoshitomi
  • EMA1 ethylene / methyl methacrylate copolymer (ethylene content: 80% by weight, methyl methacrylate content: 20% by weight) was used instead of ethylene / vinyl acetate copolymer. EMA1 was obtained in the same manner as EVA1.
  • EOC1 was obtained in the same manner as EVA1, except that EOC1: ethylene / ⁇ -olefin copolymer (Tafmer A-4090S manufactured by Mitsui Chemicals) was used instead of ethylene / vinyl acetate copolymer in preparation of EVA1.
  • EOC2 was obtained in the same manner as EVA1, except that EOC2: ethylene / ⁇ -olefin copolymer (Tafmer H-5030S manufactured by Mitsui Chemicals) was used instead of ethylene / vinyl acetate copolymer in the preparation of EVA1.
  • Resin sheets 1 and 3 which are multilayer resin sheets, are each extruded into two types and three layers of multilayer cast molding machine (manufactured by Tanabe Plastics Machinery), feed block type (manufactured by EDI), 40 mm ⁇ single screw extruder, and die width 500 mm extrusion It was produced by forming into a sheet shape at a processing temperature of 140 ° C. using a machine. Further, the resin sheets 2 and 4 to 8 which are single layer resin sheets were respectively converted into the above using a single layer T-die molding machine (manufactured by Tanabe Plastics Machinery Co., Ltd.), 40 mm ⁇ single screw extruder, and die width 500 mm extruder.
  • the sheet was formed into a sheet shape at a processing temperature of 140 ° C.
  • the wiring sheet 1 having a laminated structure of the base sheet and the resin sheet 2 was manufactured by supplying the base sheet from the feeding portion of the molding machine and heat-pressing the resin sheet 2 with a nip roll at the time of molding.
  • the wiring sheets 3 to 6 were manufactured by supplying a base sheet from the feeding portion of the molding machine and heat-pressing the resin sheets 5 to 8 with a nip roll at the time of molding.
  • Wiring connection quality The wiring connection quality of the photovoltaic modules according to the examples and comparative examples was evaluated by an EL (electroluminescence) method. That is, an EL image was acquired in a state where a current was inputted to each photovoltaic module to emit light, and the quality was evaluated.
  • an EL image inspection device manufactured by ITES, PVX100
  • the measurement conditions for acquiring the EL image were as follows: shutter time 15 seconds, aperture 8, ISO sensitivity 800, input voltage 0.73V to the photovoltaic module, and input current 8A to the photovoltaic module.
  • the evaluation results were as follows: A: no shadow (good connection), C: shadow (part of wiring connection was difficult). The results were all A in Examples 1 to 5 and C in Comparative Example 1.
  • Maximum output (Pmax) About the photovoltaic module which concerns on an Example and a comparative example, the maximum output (Pmax) was measured. That is, the current was measured while changing the bias voltage input to each photovoltaic module, and the obtained data was plotted to obtain an IV curve (not shown).
  • Sumitomo Heavy Industries, Ltd. M130-DDYTB383 J-JA was used.
  • the bias voltage is changed in the range of ⁇ 0.1V to 0.8V. Within this range, the bias voltage is changed in increments of 0.02V from ⁇ 0.1V to 0.4V.
  • the bias voltage was changed in increments of 0.01V up to 0.8V.
  • AM1.5G and 1SUN were adopted as measurement conditions, and measurement was performed at 25 ° C.
  • the fill factor (FF) is the maximum output (Pmax) / (Voc ⁇ Isc), 0.789 in the first embodiment, 0.770 in the second embodiment, 0.755 in the third embodiment, and 0 in the fourth embodiment. 789, 0.789 in Example 5, and 0.743 in Comparative Example 1.
  • Light transmittance of resin sheet at a wavelength of 350 nm was measured according to JIS-K7105 under the condition of 25 ° C. The unit is%.
  • the light transmittance at a wavelength of 350 nm was 85%.
  • the light transmittance at a wavelength of 350 nm was 85%.
  • the light transmittance at a wavelength of 350 nm was 85%.
  • the light transmittance at a wavelength of 350 nm was 85%.
  • the light transmittance at a wavelength of 350 nm was 85%.
  • the wiring sheet 6 of Example 5 the light transmittance at a wavelength of 350 nm was 85%.
  • the light transmittance at a wavelength of 350 nm was 4.3%.
  • Total light transmittance Under the condition of 25 ° C., the total light transmittance of the resin sheet was measured according to JIS-K7105. The unit is%. In the wiring sheet 1 of Example 1, the total light transmittance was 89.6%. In the wiring sheet 3 of Example 2, the total light transmittance was 88.9%. In the wiring sheet 4 of Example 3, the total light transmittance was 88.8%. In the wiring sheet 5 of Example 4, the total light transmittance was 90.2%. In the wiring sheet 6 of Example 5, the total light transmittance was 90.2%. On the other hand, in the wiring sheet 2 of the comparative example, the total light transmittance was 92.2%.

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Abstract

L'invention porte sur un module photovoltaïque (100) qui est pourvu des éléments suivants : un élément photovoltaïque du type à hétérojonction (10); une pluralité de premiers fils ultrafins (21) qui sont assemblés et fixés, par une première couche adhésive (22), à une première électrode (15) d'une surface de l'élément photovoltaïque (10); et un premier film de résine (23) qui prend en sandwich la pluralité de premiers fils ultrafins (21) entre le film lui-même et la surface de l'élément photovoltaïque (10), et qui est assemblé à ladite surface de l'élément photovoltaïque (10) par l'intermédiaire de la première couche adhésive (22). Le module photovoltaïque (100) est en outre pourvu d'une première couche de protection (40) qui transmet la lumière, et d'une première couche d'étanchéité (30) qui comble l'espace entre la première couche de protection (40) et le premier film de résine (23). La première couche adhésive (22) est formée à partir d'un matériau résineux qui comprend l'un quelconque des composés (A) et (B) suivants. (A) Un copolymère contenant de l'éthylène et un acide carboxylique insaturé, ou un ionomère du copolymère. (B) Un copolymère contenant de l'éthylène et du (méth)acrylate de glycidyle.
PCT/JP2016/053464 2015-02-06 2016-02-05 Module photovoltaïque WO2016125882A1 (fr)

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Cited By (4)

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Publication number Priority date Publication date Assignee Title
WO2020031574A1 (fr) * 2018-08-10 2020-02-13 株式会社カネカ Module de cellules solaires
JP2021034659A (ja) * 2019-08-28 2021-03-01 パナソニック株式会社 太陽電池モジュール
CN114300549A (zh) * 2021-12-29 2022-04-08 明冠新材料股份有限公司 单玻光伏电池片、制备方法及光伏组件
WO2023126150A1 (fr) * 2021-12-29 2023-07-06 Rec Solar Pte. Ltd. Ensemble cellule solaire

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