WO2020031574A1 - Module de cellules solaires - Google Patents

Module de cellules solaires Download PDF

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Publication number
WO2020031574A1
WO2020031574A1 PCT/JP2019/026684 JP2019026684W WO2020031574A1 WO 2020031574 A1 WO2020031574 A1 WO 2020031574A1 JP 2019026684 W JP2019026684 W JP 2019026684W WO 2020031574 A1 WO2020031574 A1 WO 2020031574A1
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WO
WIPO (PCT)
Prior art keywords
solar cell
double
cell module
electrode
sided electrode
Prior art date
Application number
PCT/JP2019/026684
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English (en)
Japanese (ja)
Inventor
訓太 吉河
祐司 ▲高▼橋
Original Assignee
株式会社カネカ
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Filing date
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Publication of WO2020031574A1 publication Critical patent/WO2020031574A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present disclosure relates to a solar cell module.
  • connection members In the high-density mounting module, a plurality of cells are connected in series via connection members. Conventionally, a conductive adhesive paste or an insulating adhesive paste has been widely used for this connection member.
  • the use of these adhesive pastes requires a coating step and a baking step, and thus has a problem that throughput is reduced.
  • a conductive adhesive paste is used, there is a problem in that the adhesive paste protrudes from a region where cells are overlapped with each other, and short-circuits with a conductive layer or an electrode serving as a counter electrode, thereby lowering the yield.
  • the adhesive paste that has protruded from the connection region may impair the aesthetic appearance.
  • the conductive adhesive paste is expensive because silver (Ag) is included in its composition.
  • the present disclosure has been made to solve the above-described conventional problem, and to provide a low-cost, high-performance, high-density mounting module that can be expected to improve throughput and yield.
  • one embodiment of the present disclosure is directed to a solar cell module including a solar cell string in which a first double-sided electrode solar cell and a second double-sided electrode solar cell are electrically connected.
  • the connecting member includes a conductive wire and a metal film covering the conductive wire.
  • an improvement in throughput and an improvement in yield can be expected, and a low-cost, high-performance, high-density mounting module is realized.
  • FIG. 1 is a schematic partial cross-sectional view showing a main part of a solar cell module according to one embodiment.
  • FIG. 2 is an enlarged partial cross-sectional view of a region A in FIG.
  • FIG. 3 is a schematic partial sectional view showing a solar cell constituting the solar cell module according to one embodiment.
  • FIG. 4 is a schematic plan view showing a solar cell constituting the solar cell module according to one embodiment.
  • FIG. 5 is a cross-sectional view illustrating a connection member that connects the solar cells, which constitutes the solar cell module according to the embodiment.
  • FIG. 6 is a partial perspective view schematically showing a connection example in which a plurality of solar cell strings are formed in a solar cell module according to a modification.
  • FIG. 1 schematically illustrates a cross-sectional configuration of a main part of the solar cell module according to the present embodiment.
  • FIG. 2 shows a region A of FIG. 1 in an enlarged manner.
  • a first double-sided electrode type solar cell (first cell) 101A in the solar cell module 10 a first double-sided electrode type solar cell (first cell) 101A, a second double-sided electrode type solar cell (second cell) 101B, and a third
  • the double-sided electrode type solar cell (third cell) 101C is electrically connected in series by a connection member 110 having conductivity.
  • each of the solar cells 101A to 101C may be collectively referred to as a solar cell (cell) 101.
  • Each of the first cell 101A, the second cell 101B, and the third cell 101C has a light receiving surface 101a, which is a first main surface, and a back surface 101b, which is a second main surface facing the first main surface. .
  • a connection electrode 102a is provided at one end of the light receiving surface 101a of the first cell 101A.
  • a connection electrode 102b is provided at one end of the back surface 101b of the second cell 101B opposite to the connection electrode 102a. Is provided.
  • connection electrode 102a on the light receiving surface 101a of the first cell 101A and the connection electrode 102b on the back surface 101b of the second cell 101B are electrically connected by the connection member 110.
  • a connection electrode 102a is provided at one end of the light receiving surface 101a of the second cell 101B, and a connection electrode is also provided at one end of the back surface 101b of the third cell 101C which faces the connection electrode 102a. 102b is provided.
  • the connection electrode 102a on the light receiving surface 101a of the second cell 101B and the connection electrode 102b on the back surface 101b of the third cell 101C are electrically connected by a connection member 110. Therefore, the solar cell module 10 according to the present embodiment is a so-called double-sided electrode solar cell module.
  • each of the cells 101A, 101B, and 101C that constitute the solar cell module 10 is a so-called shingling (shingling) cell, and is a high-density mounting type solar cell module formed by the cells 101A, 101B, and 101C. 10 are configured.
  • a light-receiving surface protection film 104 for protecting each light-receiving surface 101a is formed on the light-receiving surface 101a side of each of the cells 101A to 101C, and each light-receiving surface protection film 104 is formed on the back surface 101b side of each of the cells 101A to 101C.
  • a back surface protection film 106 for protecting the back surface 101b is formed.
  • a sealing material 105 is filled between the light receiving surface protection film 104 and the back surface protection film 106, and the cells 101A to 101C are sealed by the sealing material 105.
  • the light-receiving surface protection film 104 may be made of glass having a light-transmitting property and a water-blocking property, or a light-transmitting plastic.
  • a resin film such as polyethylene terephthalate (PET) or a laminated film in which an aluminum foil is sandwiched between resin films may be used.
  • the sealing material 105 is made of a transparent material such as ethylene-vinyl acetate copolymer resin (EVA), ethylene, ethyl acrylate copolymer resin (EEA), polyvinyl butyral resin (PVB), silicone resin, urethane resin, acrylic resin, or epoxy resin.
  • EVA ethylene-vinyl acetate copolymer resin
  • EAA ethylene, ethyl acrylate copolymer resin
  • PVB polyvinyl butyral resin
  • silicone resin urethane resin
  • acrylic resin acrylic resin
  • epoxy resin epoxy resin
  • An optical resin may be used.
  • an olefin-based resin having a lower water vapor transmission rate may be used as the sealing material 105. Thereby, the deterioration of the insulating member and the like can be prevented, so that the reliability of the solar cell module 10 is improved.
  • the sealing material 105, the third cell 101 ⁇ / b> C, the second cell 101 ⁇ / b> B, the first cell 101 ⁇ / b> A, the sealing material 105, and the back surface protection film 106 are formed on the light receiving surface protection film 104.
  • the sealing material 105 is cured by heating the obtained laminate under predetermined pressure and heating conditions.
  • the solar cell module 10 is obtained by attaching a metal frame (not shown) made of, for example, aluminum.
  • the pressure and heating conditions for the laminate may be, for example, a temperature of 140 ° C. or more and 160 ° C. or less, a pressure of 90 kPa or more and 120 kPa or less, and a treatment time of about 3 to 18 minutes.
  • the solar cell 101 is formed of crystalline silicon serving as a photoelectric conversion unit, specifically, a crystalline silicon substrate, any crystalline silicon-based solar cell can be used for the solar cell module 10.
  • a heterojunction crystalline silicon solar cell hereinafter, also referred to as a heterojunction solar cell
  • it is a crystalline silicon solar cell having high conversion efficiency.
  • Photoelectric conversion unit 3 and 4 show an example of a heterojunction solar cell.
  • a conductive silicon-based thin film 3 a and a transparent electrode layer 6 a are sequentially provided as the photoelectric conversion unit 20 on the light receiving surface 101 a side of the substrate 1.
  • a conductive silicon-based thin film 3b and a transparent electrode layer 6b are sequentially provided on the back surface 101b side of the substrate 1 facing the light receiving surface 101a.
  • the solar cell 101 may be provided with intrinsic silicon-based thin films 2a, 2b between the substrate 1 and the conductive silicon-based thin films 3a, 3b, respectively.
  • connection electrode 102a interposed between the connection member 110 and the light reception surface 101a, that is, between the connection member 110 and the collector electrode 7 is provided.
  • the connection electrode 102 a is an electrode that is arranged in a direction crossing the plurality of collector electrodes 7 and that is electrically connected to the connection member 110.
  • a back surface electrode 8 is provided on the transparent electrode layer 6b on the back surface 101b side. Also on the back surface 101b side, a connection electrode 102b interposed between the connection member 110 and the back surface 101b may be provided on the back surface electrode 8.
  • the substrate 1 is formed of a single conductivity type single crystal silicon substrate.
  • a single crystal silicon substrate has an n-type conductivity type doped with, for example, phosphorus (P) and a p-type conductivity type doped with, for example, boron (B). It means having one of p-type conductivity.
  • the substrate 1 is preferably an n-type single crystal silicon substrate.
  • the substrate 1 has a texture structure having fine irregularities on at least the light receiving surface 101a side of the light receiving surface 101a and the back surface 101b. That is, it is preferable that the photoelectric conversion unit 20 formed using the substrate 1 as a base also has a texture structure. Thereby, the solar cell 101 can confine the incident light in the photoelectric conversion unit 20, so that the power generation efficiency is improved.
  • the thickness of the substrate 1 is not particularly limited, but is preferably 50 ⁇ m or more and 200 ⁇ m or less, and more preferably 100 ⁇ m or more and 150 ⁇ m or less.
  • the silicon-based thin films 2a, 3a, 2b, 3b may be formed, for example, by a plasma CVD (Chemical Vapor Deposition) method.
  • the conductivity type silicon-based thin films 3a, 3b have one conductivity type or the opposite conductivity type.
  • the conductive silicon-based thin film 3a is preferably a p-type amorphous silicon-based thin film
  • the conductive silicon-based thin film 3b is preferably an n-type amorphous silicon-based thin film.
  • the silicon-based thin film includes an amorphous silicon thin film, a microcrystalline silicon thin film (a thin film containing amorphous silicon and crystalline silicon), and the like.
  • the intrinsic silicon-based thin films 2a and 2b are preferably i-type hydrogenated amorphous silicon thin films composed of amorphous silicon and hydrogen.
  • a conductive material containing a conductive oxide as a main component may be used for the transparent electrode layers 6a and 6b.
  • the conductive oxide zinc oxide, indium oxide, and tin oxide may be used alone or as a mixture.
  • an indium-based oxide containing indium oxide is preferable, and particularly, indium tin oxide (ITO) is preferably used as a main component.
  • ITO indium tin oxide
  • “contains as a main component” means that the content of the component is more than 50 wt% of the whole, preferably 70 wt% or more, more preferably 85 wt% or more.
  • the method for forming the transparent electrode layers 6a and 6b is not particularly limited, and for example, a sputtering method may be used.
  • the thickness of the transparent electrode layer 6a on the light receiving surface 101a side is preferably 10 nm or more and 140 nm or less from the viewpoints of transparency, conductivity, and reduction of light reflection.
  • a collecting electrode 7 is provided on the transparent electrode layer 6a on the light receiving surface 101a side in order to increase current extraction efficiency.
  • a paste containing a binder resin may be used as a material for forming the collector electrode 7, for example.
  • the collector electrode 7 is formed by printing and applying the paste by a screen printing method and then curing the paste at a predetermined temperature.
  • the binder resin an epoxy resin, a phenol resin, an acrylic resin, or the like may be used.
  • an application method of the paste an ink jet method, a spray method, a vacuum evaporation method, a sputtering method, a plating method, or the like may be used in addition to the screen printing method.
  • connection member 110 when the light receiving surface 101a of the first cell 101A and the back surface 101b of the second cell 101B are connected by the connection member 110, one end of the light receiving surface 101a is connected. Is provided with a connection electrode 102a, and a connection electrode 102b is provided at one end of the back surface 101b. Therefore, the connection member 110 is connected to the plurality of collector electrodes 7 via the connection electrodes 102a arranged at one end of the light receiving surface 101a, so that the bus bar electrodes that collect the current from the plurality of collector electrodes 7 are provided. It becomes unnecessary.
  • width dimension of the collecting electrode 7 and the interval of the arrangement may be appropriately selected according to the resistance of the transparent electrode layer 6a formed on the light receiving surface 101a.
  • connection electrodes 102a and 102b provided on the light receiving surface 101a and the back surface 101b of each of the cells 101A to 101C electrically connect the light receiving surface 101a and the back surface 101b of each of the cells 101A to 101C. These are electrodes for connection (joining) with the connection member 110 that is connected in series.
  • the conventional bus bar electrode is configured as a linear electrode having a larger width and a larger film thickness than the collector electrode 7 in order to collect current from the plurality of collector electrodes 7.
  • the connection electrode 102a on the light receiving surface 101a is an electrode having a smaller width and a smaller film thickness than a conventional bus bar electrode.
  • the thickness of the connection electrodes 102a and 102b may be about 10 ⁇ m to 40 ⁇ m, and the width thereof may be about 30 ⁇ m to 110 ⁇ m.
  • the same material and the same method as those of the above-described collector electrode 7 may be used as the method of forming the connection electrodes 102a and 102b.
  • a back surface electrode 8 is also provided on the transparent electrode layer 6b on the back surface 101b side in order to enhance current extraction efficiency.
  • the back electrode 8 may be formed so as to cover the entire surface of the photoelectric conversion unit 20, unlike the collector electrode 7 on the light receiving surface side. Further, it may be formed to have a specific pattern. It is desired that the material for forming the back surface electrode 8 has a high reflectance in the near-infrared to infrared region, and high conductivity and chemical stability. Such a material includes, for example, silver (Ag) or aluminum (Al).
  • a sputtering method, a vacuum evaporation method, a printing method, a plating method, or the like may be used as a method for forming the back electrode 8.
  • FIG. 5 shows a cross-sectional configuration of a connection member 110 that electrically connects cells (solar cells 101) according to the present embodiment.
  • the connection member 110 that electrically connects the cells includes, for example, a conductive wire 110a that is a core wire, and a metal film 110b that covers the conductive wire 110a.
  • the conductive line 110a may be, for example, copper (Cu) or an alloy mainly containing copper, and the metal film 110b may be an alloy mainly containing indium (In), or solder.
  • the melting temperature of the metal film 110b which is the coating film of the connection member 110, is set to be lower than the melting temperature of the sealing material 105.
  • the diameter of the conductive wire 110a may be not less than about 200 ⁇ m and not more than about 320 ⁇ m when the diameter is substantially circular. Further, the thickness of the metal film 110b may be about 2.8 ⁇ m or more and about 12 ⁇ m or less. In this case, the diameter of the connection member 110 may be set to a width substantially equal to the width of the above-described collector electrode 7.
  • the solar cell module 10 when manufacturing a so-called single-type high-density mounting module, for example, the end of the light receiving surface 101a of the first cell 101A and the end facing the same.
  • the end of the back surface 101b of the second cell 101B is electrically connected by a connection member 110.
  • the application step and the baking step of the paste are not required, so that the throughput is improved and the cost can be reduced in terms of the material.
  • the adhesive paste there is no protrusion at the time of bonding and no short circuit with other electrodes or the like, so that the yield is improved and the aesthetic appearance is not lost.
  • the insulating adhesive paste good conductivity is obtained.
  • the connecting member 110 by setting the melting point of the metal film 110b covering the conductive wire 110a to be lower than the melting temperature of the sealing material 105, the sealing material 105 is used as described above. In the sealing step, electrical connection between cells by the connection member 110 can be simultaneously performed, so that the throughput can be further improved. Further, it becomes possible to eliminate the need for a conventional bus bar electrode.
  • connection member 110 is specialized in a use state different from that of the connection member 110 according to the present embodiment.
  • FIG. 6 schematically illustrates another connection example of the three cells 101A, 101B, and 101C electrically connected to each other illustrated in FIG.
  • the three cells 101A, 101B and 101C electrically connected in series by the connection member 110 according to the present embodiment shown in FIG. 6 are referred to as a solar cell string (hereinafter abbreviated as a string) 101S.
  • the direction in which the first cell 101A and the second cell 101B are connected to each other is referred to as a string direction (hereinafter, referred to as x direction), and the direction crossing the string direction is referred to as a cross direction (hereinafter, referred to as y direction).
  • x direction the direction in which the first cell 101A and the second cell 101B are connected to each other
  • y direction the direction crossing the string direction
  • three cells 101A each composed of 101B and 101C, 2 two strings of the first string 101S 1 and the second string 101S 2 are arranged side by side in the y-direction.
  • a plurality of connecting members 110, in the second string 101S 2, the first cell 101A and second cell 101B, and thereby electrically connected in series and a second cell 101B and the third cell 101C, first string 101S 1 and the second string 101S 2 are electrically connected in parallel.
  • connection member 110 used for the electrical series connection of the cells 101A to 101C in the first string 101S 1 can be used as it is.
  • connection member 110 may be arranged so as to undulate in the joint surface of the connection electrodes 102a and 102b at least in the joint region between the connection member 110 and the connection electrodes 102a and 102b. By doing so, the resistance to the tensile stress acting between the strings 101S 1 and 101S 2 is increased. Further, the contact area between the connection member 110 and each of the connection electrodes 102a and 102b increases, so that the resistance is reduced.
  • connection member 110 will be described.
  • FIG. 1 Shows an embodiment of a connecting member 110 for the following Table 1 in the first cell 101A and electrical connection, such as a second cell 101B, as well as the electrical connection of the first string 101S 1 and the second string 101S 2.
  • each of the connection members # 1 and # 3 to # 5 uses copper (Cu) for the conductive wire and uses indium tin (In 52 Sn 48 ) for the metal film covering the conductive wire.
  • the diameters of the connection members # 1, # 3 to # 5 are 320 ⁇ m, 300 ⁇ m, 250 ⁇ m, and 200 ⁇ m, respectively.
  • the metal film thickness of the connection member # 1 is 8 ⁇ m to 12 ⁇ m, and the metal film thickness of each of the connection members # 3 to # 5 is 2.8 ⁇ m to 4.5 ⁇ m.
  • the melting point of indium tin (In 52 Sn 48 ) is 118 ° C.
  • connection member # 2 uses copper (Cu) for the conductive wire and uses a solder (Sn 42 Bi 57 Ag 1 ), so-called Sn—Bi—Ag solder, for the metal film covering the conductive wire. .
  • the diameter of the connection member # 2 is 320 ⁇ m, the metal film thickness is 8 ⁇ m to 12 ⁇ m, and its melting point is 138 ° C.
  • connection members 110 listed in [Table 1] are merely examples, and the preferred composition of the metal film 110b is a composition having a melting temperature lower than the melting temperature of the sealing material 105.
  • Table 2 below shows the relationship between the standard deviation ⁇ of the height of the unevenness (hereinafter, referred to as the standard deviation of the height of the unevenness) ⁇ of the connection electrode 102 and the thickness d of the metal film 110b serving as the coating film. .
  • the standard deviation ⁇ of the height of the unevenness is an index indicating the degree of unevenness of the surface of the connection electrode 102 formed by the printing method.
  • TC Thermal cycle reliability refers to initial performance (initial output value) after 450 times of repetition of a temperature cycle in which the temperature goes back and forth between -40 ° C and + 80 ° C. ) Means the result of evaluating the ratio of the output value to the percentage. Here, if the initial performance is approximately 95% or more, it is judged as acceptable.
  • the standard deviation ⁇ of the uneven height is approximately 10.4 ⁇ m, approximately 8.7 ⁇ m, approximately 6.5 ⁇ m, and approximately 4.1 ⁇ m.
  • the value d / ⁇ of the ratio of the thickness d of the metal film to the standard deviation ⁇ of the height of the unevenness is less than 90%, the value d / ⁇ of the ratio exceeds 100%. It can be seen that both the initial performance and the TC reliability are reduced. This is a finding of the present inventors.
  • the thickness of the metal film 110b is too small with respect to the uneven shape of the surface of the connection electrode 102, so that appropriate electrical connection is not performed and the electrical resistance increases. It seems that the output decreases. Further, if the thickness of the metal film 110b is too small, the mechanical bonding force is also weak, so that the metal film 110b cannot withstand the thermal stress in the TC test, and the bonding with the connection electrode 102a and the like is partially cut, thereby Also, it is considered that the output decreases and the reliability decreases.
  • ⁇ Table 3 ⁇ shows another preferable combination of the standard deviation ⁇ of the uneven height and the thickness d of the metal film.
  • the data of Table 2 is also included in part of [Table 3].
  • the value d / [sigma] of the ratio of the thickness d of the metal film to the standard deviation [sigma] of the height of the unevenness is preferably about 100% to 185%, and more preferably 102% or more. It turns out that 185% or less is more preferable.
  • the standard deviation ⁇ of the uneven height is preferably 5 ⁇ m or more. This is because when the standard deviation ⁇ of the connection electrode 102 is less than 5 ⁇ m, even if the thickness d of the metal film 110b is a preferable value, the TC reliability is approximately 95%, specifically, 94.7% or less. Is to increase. It is considered that when the height of the unevenness on the electrode surface is low, the anchor effect of the connection electrode 102 on the connection member 110 (the effect of the metal film 110b entering the fine unevenness on the electrode surface and hardening) is reduced.

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  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un module (10) de cellules solaires selon la présente invention comprenant une chaîne (S) de cellules solaires dans laquelle une première cellule solaire (101A) de type électrode double face et une seconde cellule solaire (101B) de type électrode double face sont connectées électriquement l'une à l'autre. Par rapport à la chaîne (S) de cellules solaires, une extrémité d'une surface de réception de lumière (101a) de la première cellule solaire (101A) de type électrode double face et une extrémité d'une surface arrière (101b) de la seconde cellule solaire (101B) de type électrode double face sont connectées électriquement l'une à l'autre au moyen d'un élément de connexion (110). L'élément de connexion (110) est composé d'un fil conducteur (110a) et d'un film métallique (110b) qui recouvre le fil conducteur (110a).
PCT/JP2019/026684 2018-08-10 2019-07-04 Module de cellules solaires WO2020031574A1 (fr)

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JP2018-151945 2018-08-10
JP2018151945 2018-08-10

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WO2020031574A1 true WO2020031574A1 (fr) 2020-02-13

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4276917A1 (fr) 2022-05-12 2023-11-15 Toyota Jidosha Kabushiki Kaisha Panneau solaire

Citations (6)

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Publication number Priority date Publication date Assignee Title
WO2014196413A1 (fr) * 2013-06-04 2014-12-11 三洋電機株式会社 Cellule solaire
JP2016100605A (ja) * 2014-11-26 2016-05-30 エルジー エレクトロニクス インコーポレイティド 太陽電池モジュール
WO2016125882A1 (fr) * 2015-02-06 2016-08-11 長州産業株式会社 Module photovoltaïque
JP2018006659A (ja) * 2016-07-07 2018-01-11 三菱電機株式会社 太陽電池モジュール及びその製造方法
CN108010979A (zh) * 2017-12-30 2018-05-08 苏州宇邦新型材料股份有限公司 一种用于叠瓦式光伏组件的焊带及叠瓦式光伏组件
JP2018093167A (ja) * 2016-12-02 2018-06-14 エルジー エレクトロニクス インコーポレイティド 太陽電池及びこれを含む太陽電池パネル

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014196413A1 (fr) * 2013-06-04 2014-12-11 三洋電機株式会社 Cellule solaire
JP2016100605A (ja) * 2014-11-26 2016-05-30 エルジー エレクトロニクス インコーポレイティド 太陽電池モジュール
WO2016125882A1 (fr) * 2015-02-06 2016-08-11 長州産業株式会社 Module photovoltaïque
JP2018006659A (ja) * 2016-07-07 2018-01-11 三菱電機株式会社 太陽電池モジュール及びその製造方法
JP2018093167A (ja) * 2016-12-02 2018-06-14 エルジー エレクトロニクス インコーポレイティド 太陽電池及びこれを含む太陽電池パネル
CN108010979A (zh) * 2017-12-30 2018-05-08 苏州宇邦新型材料股份有限公司 一种用于叠瓦式光伏组件的焊带及叠瓦式光伏组件

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4276917A1 (fr) 2022-05-12 2023-11-15 Toyota Jidosha Kabushiki Kaisha Panneau solaire

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