WO2016113008A1 - Verfahren und vorrichtung zum beschichten von substraten - Google Patents
Verfahren und vorrichtung zum beschichten von substraten Download PDFInfo
- Publication number
- WO2016113008A1 WO2016113008A1 PCT/EP2015/074517 EP2015074517W WO2016113008A1 WO 2016113008 A1 WO2016113008 A1 WO 2016113008A1 EP 2015074517 W EP2015074517 W EP 2015074517W WO 2016113008 A1 WO2016113008 A1 WO 2016113008A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- film layer
- layer material
- temperature
- heating
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 131
- 238000000034 method Methods 0.000 title claims abstract description 42
- 239000011248 coating agent Substances 0.000 title claims abstract description 15
- 238000000576 coating method Methods 0.000 title claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 85
- 229920001169 thermoplastic Polymers 0.000 claims abstract description 55
- 239000004416 thermosoftening plastic Substances 0.000 claims abstract description 55
- 238000010438 heat treatment Methods 0.000 claims description 63
- 239000002904 solvent Substances 0.000 claims description 28
- 238000009826 distribution Methods 0.000 claims description 17
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- 238000002844 melting Methods 0.000 description 12
- 229920000642 polymer Polymers 0.000 description 11
- 230000002829 reductive effect Effects 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- 230000001419 dependent effect Effects 0.000 description 6
- 239000000155 melt Substances 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 238000011161 development Methods 0.000 description 5
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- 238000004519 manufacturing process Methods 0.000 description 5
- 239000004952 Polyamide Substances 0.000 description 4
- -1 Polyethylene terephthalate Polymers 0.000 description 4
- 239000004743 Polypropylene Substances 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000001125 extrusion Methods 0.000 description 4
- 229920002647 polyamide Polymers 0.000 description 4
- 229920000573 polyethylene Polymers 0.000 description 4
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- 230000001133 acceleration Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
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- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
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- 238000002360 preparation method Methods 0.000 description 3
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- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
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- 238000013021 overheating Methods 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
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- 239000004800 polyvinyl chloride Substances 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 229920000034 Plastomer Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
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- 238000005259 measurement Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
Definitions
- the invention relates to a method according to claim 1 and an apparatus according to claim 10.
- the substrate in particular a wafer, is fixed to the underside on a horizontal turntable, the chuck, by means of a vacuum suction.
- a metering device over the center of the wafer, a predefined amount of a polymer solution which is mixed with solvent, hereinafter referred to as film layer material, is applied.
- the film thickness is dependent on the viscosity of the polymer solution, the rotational speed, the spin and the process duration of the spin coating. Final spin speed and process time are controlled on the spin coater depending on the desired result and the
- Film layer material is thus distributed from the delivery point of the approximately central center of the substrate towards the radially symmetrical edge of the substrate. Any unnecessary film layer material is thereby thrown off the substrate. In general, this will be
- the solvent content is intended to serve to reduce the viscosity and thus supports the uniform distribution of the polymer solution on the wafer.
- the reduced viscosity accelerates the production of the film layer. Through the over To reduce the viscosity of the polymer solution by extending all areas of the wafer, a particularly large amount of excess material is thrown off over the edge of the substrate. In order to be able to produce a stable film layer, it is necessary in a next step to remove the solvents bound in the polymer solution. Part of the solvent
- Residual solvent concentration is reduced to near zero in time by subsequent heating (soft bake). This is done by a planar and one-piece annealing zone which extends over the entire surface of the sample holder and has at least the dimension of the substrate to be treated or is slightly larger. The potentially very good
- the substrate is filled with a polymer solution in which a high proportion
- Solvent was spin-coated. To a stable
- the sample holder on which the substrate to be processed is placed in a rotary motion. This causes a distribution of the film layer material over the entire surface of the substrate.
- the centric center of the sample holder forms the radial axis of rotation for the substrate.
- the distribution of the film layer material is specifically described by the
- Film layer material comes. Depending on the solvent content and the resulting viscosity is expected here with a multiple use of film layer material that can be necessary in the best case, a doubling of the film layer material used. In special cases, however, the fourfold or higher use of the
- the spun-off film layer material can not be reused since contamination can not be excluded. Since the high proportion of solvent in the film layer would disturb the bonding process, it is necessary to reduce this. This can be achieved by an additional increase in the rotational speed as well as by an increase in the
- Solvent concentration initially decreases rapidly and subsequently saturates to a value which is particularly dependent on the film thickness and can be further reduced only at higher temperatures. To achieve this, it comes to a heating in which the solvent can be further reduced. Baking as such is also not trivial, since this process must be carried out in different temperature steps. The different temperature steps are necessary around one Bubble formation - which would be caused by too rapid warming - to prevent. Since the amount of solvent to be heated is largely determined by the film thickness, it should be noted that with
- the thinner the film layer is formed the heat-up time correspondingly reduced.
- the thickness of the film layer is not arbitrary, but will suffice
- solvent-containing polymer solutions is absolutely necessary and unfolds in any case, a process flow inhibiting effect.
- the object of the present invention is therefore to further develop the generic devices and methods for coating substrates in such a way that a more efficient coating is made possible, in particular when used in bonding.
- the basic idea of the present invention is to use, for coating a substrate with a film layer, a, in particular solvent-free, thermoplastic, which is provided by means for applying the film
- Thermoplast suitable means (applicator) is applied.
- the invention relates to a method and a device with which a coating, preferably spin-coating of a substrate, in particular a wafer, with a, in particular solvent-free, thermoplastic takes place.
- the invention describes a method and a device which permit the use of one, in particular solvent-free,
- Thermoplastic film for film preparation on substrates provides.
- the invention relates in particular to a device with which it is possible for the thermoplastic film used for producing a film layer uniformly on the
- thermoplastics In principle, the use of all known types of thermoplastics is conceivable. According to the invention are preferred, individually or in combination:
- PE polyethene
- ABS Acrylonitrile butadiene styrene
- PMMA polymethyl methacrylate
- PC Polycarbonate
- PET Polyethylene terephthalate
- PE Polyethylene having a melting point of 80-100 ° C, (PE-LD, 80 ° C), (PE-HD, 100 ° C), (PE-LLD, 3 ° -90 ° C),
- PS Polystyrene (PS) having a melting point of 240 ° C for isotactic PS and 270 ° C for syndiotactic PS,
- thermoplastics which have a characteristic d. H. Material behavior, etc. have similar properties as the aforementioned film layer materials.
- the invention provides for the use of a solvent-free thermoplastic for producing a film layer on a substrate, in particular a wafer.
- Thermoplastic is a plastic that basically, depending on the
- thermoplastic and liquid are preferred Thermoplastics used, which does not cross-link and can be reversibly liquefied and hardened several times, in particular as often as desired.
- thermoplastic is applied to the surface of a substrate by an applicator.
- the application means is in particular an extruder.
- thermoplastic in particular in solid form in an extruder device (in general:
- Film layer material) via the extruder device the physical state of the film layer material is changed from solid to liquid by supplying heat, in particular in the extruder device. This is preferably done by a heat source located in the extruder.
- the change in state of aggregation makes it possible to apply film layer material to the substrate surface via the extruder.
- the amount of film layer material to be applied to the substrate surface depends on the desired film layer thickness.
- the application means in particular have an opening through which the
- Thermoplastic emerges.
- the opening can be flushed with gases and / or gas mixtures in order to prevent premature oxidation of the gas
- thermoplastics Prevent thermoplastics.
- gases used are preferably
- the extruder operates at a processing temperature between 25 ° C and 500 ° C, preferably between 50 ° C and 500 ° C, more preferably between 100 ° C and 500 ° C, most preferably between 250 ° C and 500 ° C, most preferably between 300 ° C and 500 ° C.
- the extruder operates in particular with a processing pressure between 1 bar and 1 000 bar, more preferably between 1 0 bar and 1 000 bar. at the most preferably between 1 00 bar and 1 000 bar, most preferably between 500 bar and 1000 bar.
- Temperature range is material dependent and is derived from the viscosity curve.
- Some viscosity curves have a viscosity minimum of viscosity as a function of temperature.
- the limits of the preferred temperature range according to the invention are given as plus / minus values in relation to this viscosity minimum.
- the temperature range is between -50 ° C and + 50 ° C, preferably between -30 ° C and + 30 ° C, more preferably between -10 ° C and + 10 ° C, even more preferably between -5 ° C and + 5 ° C, most preferably between -1 ° C and +1 ° C around the
- the viscosity minimum of the viscosity curve is preferably a global minimum. Should the viscosity curve have several minima and it should be expedient, it may be useful according to the invention to choose a non-global, minimum.
- Thermoplastics is correspondingly low. This temperature is preferably above 25 ° C, preferably above 50 ° C, more preferably above 1 00 ° C, most preferably above 1 50 ° C, most preferably above 250 ° C.
- the low viscosity of the substrate which is present on the substrate when applied, becomes Film layer material kept as constant as possible at least at the beginning of the distribution and the film layer material distributed homogeneously on the substrate.
- the admixture of solvent for the purpose of reducing the viscosity is for this reason throughout the process of distribution of the
- the application of the film layer material preferably takes place at a central point, in particular approximately in the center of the center of the substrate.
- the film layer material is distributed over the entire surface of the substrate (distribution means), in particular by means of rotation.
- Heating device heated In a particular invention
- the sample holder is heated to the same temperature as the application means, in particular the extruder, to prevent cooling of the polymer to be applied as far as possible.
- this has separately controllable heating zones which, in a particularly advantageous embodiment, have an annular shape
- Film layer material can be influenced.
- the viscosity is kept lower in the center than towards the edge to a
- the viscosity is reduced in order to avoid excessive spin-off of film layer material over the side edge
- melt flow index (MFR) of the film layer material is decisive for the adjustment of the rotation and / or the temperature, since this is the
- the melt flow index is determined for a defined temperature and a defined pressure.
- Measurement is preferably carried out in a capillary rheometer.
- melt flow index of the film layer material is greater than 10E-3 g / (10 * min), preferably greater than 10 ⁇ -g / (10 * min), more preferably greater than 10 g / (10 * min), most preferably greater as 100 g / (10 * min), on
- annular, separately and differentially heated heating elements which extend around the centric center of the sample holder, it is possible to heat the radial edge region of the substrate less intense, which has a direct influence on the viscosity in these areas.
- the heating elements are heated so that the temperature entry from the centric center of the sample holder starting out to the
- thermoplastic properties of the j eumble film layer material in particular by creating specific
- Parameter sets for each film layer material or for each combination a film layer material and a substrate are mentioned.
- the Coriolis force is directly proportional to the angular velocity of the rotating substrate, as well as directly proportional to the velocity of the propagating
- Thermoplastic It can therefore by reducing the
- Angular velocity and / or the speed of the propagating thermoplastic can be reduced. For example, if the speed of the propagating thermoplastic is increased by a higher temperature and concomitant lower viscosity, the
- Angular speed can be reduced accordingly to reduce the Corioüskraft or prevent.
- the desired layer thickness is taken into account so that the parameters are set in particular such that the specifications for the distribution of the thermoplastic on the substrate are met.
- the parameters can in particular be determined empirically.
- Thermoplastics in the semiconductor industry can be improved in particular in that the film layer material, in particular bar-shaped endless, as roll material endlessly or as prefabricated pads, by means of at least one application means to the substrate, in particular a wafer, applied, in particular deposited, is.
- the film layer material is applied in combination with a sample holder forming a plurality of heating zones.
- the application agent then acts as a kind of glue gun. It is also conceivable the supply of rods or pads by an extruder, if they can be processed with the extruder.
- thermoplastic is the thermoplastic
- thermoplastic By using one, in particular a solvent content of less than 80%, preferably less than 60%, more preferably less than 40%, even more preferably less than 20%, most preferably less than 1%, most preferably solvent-free, thermoplastic eliminates the time-consuming Baking the solvent at different temperatures completely or it is at least significantly reduced.
- Reduction of the solvent serves to be dispensed with. As a result, a higher throughput is achieved, which is particularly important in the high-volume manufacturing sector.
- Thermoplastics as needed, in particular in a previously defined and required for the preparation of j eumble film layer amount to the
- Substrate surface metered be abandoned.
- annular and / or independently heatable heating elements or heating zones of the sample holder it becomes possible to heat the radial edge region of the substrate less intensively, which has a direct influence on the viscosity of the film layer material during application. Accordingly, there is an increase in the viscosity in the, in particular radially symmetrical, edge region of the substrate and, as a result, a reduction in the film layer material thrown out over the substrate edge.
- heating means for heating the substrate and the application means in particular the
- Sample holder differ from each other, in particular, the temperature of the depositing means, in particular the extruder, to be deposited
- Thermoplastics to achieve a low viscosity are well above the temperature of the substrate holder.
- the temperature is also above the temperature necessary for a bonding process.
- the invention is also based on the idea to develop a method and a device with which it is possible to use a
- Applicator in particular an extruder, the application of a, in particular solvent-free, thermoplastic for producing a predefined film layer, used in the semiconductor industry
- An alternative device comprises:
- An application means in particular an extruder device, for
- thermoplastic on a substrate to be processed
- a sample holder consisting of a plurality of, in particular ring-shaped, heating elements which can be completely integrated into the sample holder and
- a heater with associated control which is particularly adapted so that the temperature at the application means, in particular at the extruder device, and the heating of the sample holder can be controlled independently.
- a plurality of heating elements which are independently, preferably continuously, heated and can also be part of the sample holder.
- the heating elements may preferably be actively coolable to be cooled more quickly to a desired temperature.
- the number of heating elements is therefore at least two
- Heating elements preferably more than two heating elements, most preferably more than ten heating elements, most preferably more than 20
- Heating elements In cross-section, the heating elements are in particular rectangular in order to allow a plane-parallel contact directly or indirectly with the substrate. In principle, however, is also any other
- the heating elements may also be spaced apart from each other and / or insulated to a
- Heating elements and thus to prevent heating zones.
- a single heating element can already be considered self-sufficient heating zone. Nevertheless, it is possible with advantage, several
- heating elements to form a heating zone, ie to form groups and to control these via the control unit.
- the heating elements extend in particular over the entire
- Sample holder and are preferably arranged annularly around the central center of the sample holder.
- the heating elements can both be integral components of the specimen holder and consist of individual segments which are plane-parallel in contact with the underside of the specimen holder and thus permit indirect heat transfer.
- the substrate facing side of the sample holder which serves as a contact surface for
- Substrate is provided, is preferably planar formed.
- the method and the device are tested with recipes tested in tests, in particular empirically optimized value collections of parameters (Parameter sets), which are in functional or procedural context, in particular automated, operated.
- recipes are particularly important for the device and the method according to the invention, because thereby a reproducibility of
- the substrates are preferably wafers.
- the wafers are standardized substrates with defined, in particular standardized, diameters.
- the diameters of the substrates are preferably standardized diameters of 1, 2, 3, 4 inches or 1 25mm, 1 50mm, 200mm, 300mm or 450 mm. However, it is also conceivable to coat rectangular substrates.
- the aforementioned devices are according to an advantageous embodiment, at least partially, preferably completely in an evacuable and / or heatable environment, preferably in one
- Process chamber which can be rinsed, in particular with gas to
- the method according to the invention runs at least partially, preferably completely, in the bonding chamber, wherein, as an additional step at the end, in particular the first substrate is bonded to the second substrate.
- the process chamber may in particular less than 10 "3 mbar, more preferably less than 10" 4 mbar, Trustzugtesten less than 1 0 "5 mbar, on allerbevorzugtesten less than 1 0 * 6 mbar evacuated to a pressure of less than 1 bar, preferably become.
- the method according to the invention provides for a, in particular preheated, carrier substrate, preferably a polymer substrate, to be placed on a heatable sample holder and initially adjusted to the temperature of the sample holder. After the successful approximation of the temperature, the application of the thermoplastic (in general: film layer material), in particular plastomers, by the application means, in particular the
- Extruder device on the surface of the substrate.
- the application can be carried out in particular in the moment in which the thermoplastic can be thermoformed by reaching a certain temperature range.
- the flowability is not affected by the
- Admixture of a solvent achieved, but preferably exclusively by the heating of the thermoplastic.
- the aim is therefore that the thermoplastic is brought into a molten state and held in this molten state until fully applied to the substrate.
- a temperature range is selected in which the phase change is reversible. Overheating of the thermoplastic is therefore preferably avoided. Overheating would lead to unfavorable thermal decomposition of the thermoplastic.
- extruder extruder device
- an extrusion opening of the extruder is preferably in the X plane (substrate surface or parallel thereto) approximately in the centric center of the sample holder and in the Z direction near the substrate surface.
- the application site is also located in the X-plane directly in the area of
- thermoplastic As little as possible during the transition from the extruder to the surface of the sample holder, which is the
- the distance between the extrusion opening and the Surface of the substrate is in particular smaller than 100 mm, still
- the sample holder When the film layer material is applied to the substrate surface, the sample holder may already be in a rotational movement (rotation) in order to achieve a planar distribution of the film layer material over the entire substrate. It is also conceivable, however, for a rotational movement which begins only when the film layer material has been applied to the substrate. To this end, it is advantageous to control the deposition process so that the amount of the film layer material deposited on the surface of the substrate is in proportion to the rotational speed of the center rotating about the radially symmetric center of the substrate and distribution to the radially symmetric edge of the substrate. The speed of rotation is given in revolutions per minute (rounds: per minute, rpm). The rotational speed is
- the rotational acceleration is calculated in revolutions per minute per second (rounds per minute per second, rpm / s).
- the spin acceleration is in particular greater than 1 rpm / s, preferably greater than 10 rpm / s, more preferably greater than 100 rpm / s, most preferably greater than 1000 rpm / s, most preferably greater than 5000 rpm / s.
- Viscosity is a physical property that is temperature dependent.
- the viscosity of the film layer material preferably increases
- the viscosity of the film layer material is in particular between 10e 6 Pa * s and 1 Pa * s at room temperature, preferably between 1 0 5 Pa * s and 1 Pa * s, more preferably between 10e 4 Pa * s and 1 Pa * s, most preferably between 10 3 Pa * s and 1 Pa * s.
- the temperature input on the sample holder is controlled in particular so that it decreases from the center's center of the sample holder starting to the radially symmetrical edge region of the sample holder.
- Film layer material is thus close to the centric center of the
- Edge area of the substrate / sample holder Edge area of the substrate / sample holder.
- the temperature entry with which the heating elements are heated H hat in particular in a range of 25 ° C to max. 500 ° C, preferably between 1 00 ° C and 500 ° C, more preferably between 250 ° C and 500 ° C, most preferably between 30 ° C and 500 ° C.
- Each heating element is preferably individually controllable, i. heatable and / or individually controllable and / or actively coolable.
- the heat input is based in particular on the known / predetermined material properties of the film layer material used and / or the already known
- the temperature difference from a heating element, in particular heating ring, to an adjacent heating element is preferably less than 10 ° C, more preferably less than 5 ° C.
- Heating elements in particular heating rings to link together and so to form consisting of several heating rings heating zones.
- the temperature of the heating element or at least of the substrate remains below the temperature value critical for the film layer material, in particular below 300 ° C., since otherwise a thermal decomposition of the film layer material could take place.
- the melt flow index of the film layer material, in particular thermoplastic is specific to the film layer material used.
- thermoplastics which can be used according to the invention can achieve a flowable state only by adding solvents, such as, for example, acetone. These varieties of thermoplastics are too
- Solvents must be added (compared with the methods known in the art) in order to achieve the present invention
- thermoplastics in particular in a range of 80 - 280 ° C.
- the temperature entry is preferably carried out so that in the region of the central center on the substrate surface, a temperature is reached at which an optimum melt flow index for the used
- the heating means are also suitable, in particular regulated, this temperature permanent and constant between -20 ° C and + 20 ° C, preferably between - 1 0 ° C and + 1 0 ° C, more preferably between -5 ° C and +5 ° C, preferably, most preferably between -2 ° C and + 2 ° C, preferably, most preferably between -1 ° C and + 1 ° C;
- the heat input in the vicinity of the central center of the substrate is higher than in the radially symmetrical edge region of the substrate, where a centrifuging of excess film layer material is prevented or at least greatly reduced by a higher viscosity.
- the heat input to be set is thus mainly the
- the bandwidth of the heat input may be such that the used film layer material from the application means, in particular the extruder device, to the distribution in the radially symmetrical edge region of the substrate passes through all aggregate states.
- a substrate which has been coated, in particular lacquered, by means of the process according to the invention or the embodiment according to the invention is bonded after the coating, in particular immediately.
- evaporation of a solvent is no longer necessary, which significantly improves the process time between the coating and the bonding.
- the time between the end of the coating and the beginning of the bonding process is less than 10 minutes, preferably less than 5 minutes, more preferably less than 3 minutes, most preferably less than 1 minute, most preferably less than 30 seconds.
- Such short time intervals can not be achieved with evaporation steps and therefore represent a significant improvement of the invention.
- a substrate in particular a
- Carrier substrate loaded on a, in particular tempered, sample holder.
- the substrate is brought to the temperature of the sample holder.
- the substrate is accelerated to a predetermined speed.
- the. in particular solvent-free, thermoplastic deposited by the application means on the side facing away from the sample holder surface of the substrate is accelerated to a predetermined speed.
- a fourth process step the sample holder is stopped.
- thermoplastic applied to the substrate is cured, in particular by cooling the coated substrate.
- the cooling takes place in particular either one in the
- Chamber introduced gas and / or via an active cooling of the
- FIG. 1 shows a schematic cross-sectional view of an embodiment of a device according to the invention
- FIG. 2 shows a plan view of the embodiment according to FIG. 1,
- FIG. 3 shows a schematic cross-sectional view of an embodiment of a device according to the invention after the distribution of the thermoplastic
- Figure 4 is a schematic cross-sectional view of another
- Figure 5 is a schematic, not to scale
- Figure 1 shows an application means 1 with a heater 2 and a
- the application means 1 is preferably designed as an extruder and then has corresponding extruder-typical components such as screws, which liquefy the thermoplastic, which is present in particular as granules, by means of temperature and / or pressure.
- the application means 1. in particular as a glue gun, be designed so that the thermoplastic, in particular in rod form, is moved by the heating means 2 and / or the dispensing area.
- embodiment of the invention can, in particular in
- a rotatable by rotating means sample holder 7 for
- the substrate 6 is preferably centered on the sample holder 7.
- the sample holder 7 has at its receiving surface 7o, in particular concentrically extending and / or spaced and / or mutually insulated, heating elements 9 for heating the substrate 6.
- the opening 12 is arranged above a substrate surface 6o of the substrate 6 with the smallest possible distance to the substrate surface 6o or can be arranged. With regard to an X-plane (parallel to the substrate surface 6o), the opening 12 is arranged approximately over the central center 5 of the substrate 6 and likewise the centric center of the sample holder 7.
- a combined control unit 8 controls the application means 1 and the annular heating elements 9 and / or the orientation and temporary
- the substrate 6 is aligned with its side facing away from the substrate surface 6o side on the receiving surface 7o, applied and temporarily fixed.
- the central center 5 of both the substrate 6 and the sample holder 7 thus coincide in the X-plane.
- the film layer material 4 here a thermoplastic, is applied through the opening 12 of the application means 1 to the central center 5 of the substrate 6.
- the film layer material 4 on the substrate surface 6o is accelerated by the rotation means of the sample holder 7 from the central center 5 to an edge region 11, wherein the heating elements 9 are controlled such that the viscosity of the film layer material from the central center 5 to the edge region 11 decreases continuously ,
- the rotational speed remains constant, in particular before the application of the film layer material 4 until the edge region 11 is reached.
- the viscosity is controlled by the temperature of the heating elements 9 in heating zones 10 such that the film layer material 4 : forms a film layer with a constant thickness on the substrate 6 is distributed (see Figure 3).
- FIG. 4 shows an alternative application means 1 'according to the invention, in which prefabricated pads 1 4 formed from the film layer material are centered over the substrate 6 via a holding device 1 4 and then centered on the substrate
- Substrate surface 6o of the substrate 6 are stored. It is also conceivable to heat the prefabricated pads 14 by the heating means 2 via the holding device 1 3, so that the thermoplastic of the pad 14, in particular continuously and not with droplet formation, flows onto the center of the substrate.
- the pads 14 are formed with a flat support surface and a concave, the support surface opposite top (see Figure 5). This will be Peaks, especially in the center of the substrate surface 6o, during the formation, in particular distribution, the coating avoided.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Coating Apparatus (AREA)
- Laminated Bodies (AREA)
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201580072902.9A CN107210246A (zh) | 2015-01-15 | 2015-10-22 | 用于涂装基体的方法和装置 |
SG11201704981YA SG11201704981YA (en) | 2015-01-15 | 2015-10-22 | Method and device for coating substrates |
US15/542,096 US20180174832A1 (en) | 2015-01-15 | 2015-10-22 | Method and device for coating substrates |
EP15794090.9A EP3245669A1 (de) | 2015-01-15 | 2015-10-22 | Verfahren und vorrichtung zum beschichten von substraten |
KR1020177019061A KR20170101939A (ko) | 2015-01-15 | 2015-10-22 | 기판을 코팅하기 위한 방법 및 장치 |
JP2017535861A JP2018505043A (ja) | 2015-01-15 | 2015-10-22 | 基材をコーティングするための方法及び装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102015100579.4A DE102015100579A1 (de) | 2015-01-15 | 2015-01-15 | Verfahren und Vorrichtung zum Beschichten von Substraten |
DE102015100579.4 | 2015-01-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2016113008A1 true WO2016113008A1 (de) | 2016-07-21 |
Family
ID=54541019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2015/074517 WO2016113008A1 (de) | 2015-01-15 | 2015-10-22 | Verfahren und vorrichtung zum beschichten von substraten |
Country Status (8)
Country | Link |
---|---|
US (1) | US20180174832A1 (de) |
EP (1) | EP3245669A1 (de) |
JP (1) | JP2018505043A (de) |
KR (1) | KR20170101939A (de) |
CN (1) | CN107210246A (de) |
DE (1) | DE102015100579A1 (de) |
SG (1) | SG11201704981YA (de) |
WO (1) | WO2016113008A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021121608A1 (de) | 2019-12-19 | 2021-06-24 | Ev Group E. Thallner Gmbh | Vereinzeltes verkapseltes bauelement und verfahren zu dessen herstellung |
Families Citing this family (1)
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JP7191458B2 (ja) * | 2018-08-06 | 2022-12-19 | 株式会社ディスコ | ウェーハの加工方法 |
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WO2013056059A2 (en) * | 2011-10-12 | 2013-04-18 | 1366 Technologies Inc. | Apparatus and process for depositing a thin layer of resist on a substrate |
WO2014105582A1 (en) * | 2012-12-27 | 2014-07-03 | 3M Innovative Properties Company | Coat formation method, coat formation device, and method for producing semiconductor chip |
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JPH0734890B2 (ja) * | 1991-10-29 | 1995-04-19 | インターナショナル・ビジネス・マシーンズ・コーポレイション | スピン・コーティング方法 |
JPH05136042A (ja) * | 1991-11-08 | 1993-06-01 | Seiko Epson Corp | 半導体装置の製造方法 |
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JP3453073B2 (ja) * | 1998-10-14 | 2003-10-06 | 東京エレクトロン株式会社 | 塗布処理装置 |
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2015
- 2015-01-15 DE DE102015100579.4A patent/DE102015100579A1/de not_active Ceased
- 2015-10-22 JP JP2017535861A patent/JP2018505043A/ja active Pending
- 2015-10-22 CN CN201580072902.9A patent/CN107210246A/zh active Pending
- 2015-10-22 EP EP15794090.9A patent/EP3245669A1/de not_active Withdrawn
- 2015-10-22 WO PCT/EP2015/074517 patent/WO2016113008A1/de active Application Filing
- 2015-10-22 US US15/542,096 patent/US20180174832A1/en not_active Abandoned
- 2015-10-22 SG SG11201704981YA patent/SG11201704981YA/en unknown
- 2015-10-22 KR KR1020177019061A patent/KR20170101939A/ko unknown
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WO2013056059A2 (en) * | 2011-10-12 | 2013-04-18 | 1366 Technologies Inc. | Apparatus and process for depositing a thin layer of resist on a substrate |
WO2014105582A1 (en) * | 2012-12-27 | 2014-07-03 | 3M Innovative Properties Company | Coat formation method, coat formation device, and method for producing semiconductor chip |
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WO2021121608A1 (de) | 2019-12-19 | 2021-06-24 | Ev Group E. Thallner Gmbh | Vereinzeltes verkapseltes bauelement und verfahren zu dessen herstellung |
Also Published As
Publication number | Publication date |
---|---|
US20180174832A1 (en) | 2018-06-21 |
CN107210246A (zh) | 2017-09-26 |
JP2018505043A (ja) | 2018-02-22 |
SG11201704981YA (en) | 2017-07-28 |
DE102015100579A1 (de) | 2016-07-21 |
KR20170101939A (ko) | 2017-09-06 |
EP3245669A1 (de) | 2017-11-22 |
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