JP2018505043A - 基材をコーティングするための方法及び装置 - Google Patents
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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Abstract
Description
− 接合用接着剤、特に
− シクロオレフィンコポリマー、
− ポリエーテル(PE)、
− ポリプロペン(PP)、
− ポリスチレン(PS)、
− ポリ塩化ビニル(PVC)、
− ポリアミド(PA)、
− ポリイミド(PI)、
− ポリメチルメタクリレート、
− 220〜250℃の溶融温度を有するアクリロニトリル−ブタジエン−スチレン(ABS)、
− 178〜260℃の溶融温度を有するポリアミド(PA)、
− 150〜160℃の溶融温度を有するポリ乳酸(PLA)、
− 105℃の溶融温度を有するポリメチルメタクリレート(PMMA)、
− 280〜320℃の溶融温度を有するポリカーボネート(PC)、
− 250〜260℃の溶融温度を有するポリエチレンテレフタレート(PET)、
− 80〜100℃の溶融温度を有するポリエチレン(PE)、(PE−LD、80℃)、(PE−HD、100℃)、(PE−LLD、30〜90℃)、
− 160〜165℃の溶融温度を有し、特に、少量の溶媒が添加されているポリプロピレン(PP)、
− アイソタクチックPSの場合は240℃の融点を有し、かつシンジオタクチックPSの場合は270℃の融点を有するポリスチレン(PS)、
− 280℃の融点を有するポリエーテルエーテルケトン(PEEK)
及び/又は
− 79℃の融点を有し、特に、溶媒が加えられているポリ塩化ビニル(PVC)。
・希ガス、特に
・Ar、He、Kr、Xe、
・不活性ガス
・N2、CO2
である。
− 特に無溶媒の熱可塑性樹脂を加熱コントロールし、かつ被加工基材へ送出するための塗布手段、特に押出機デバイス、
− 特に、リング状に形成された、サンプルホルダーに完全に組み込まれていてよい多数の加熱エレメントからなるサンプルホルダー並びに、
− 特に、塗布手段、特に押出機デバイスの温度と、サンプルホルダーの加熱とを互いに独立して制御することができるように設定されている、付属の制御装置を有する加熱デバイスを含む。
Claims (10)
- 基材(6)をコーティングするフィルム層によって基材(6)をコーティングする方法において、該フィルム層のフィルム層材料(4)が熱可塑性樹脂であり、該熱可塑性樹脂を塗布手段によって塗布することを特徴とする、前記方法。
- フィルム層材料(4)が、80%未満、特に60%未満、有利には40%未満、さらにより好ましくは20%未満、最も好ましくは1%未満の溶媒割合を有し、極めて好ましくは無溶媒である、請求項1に記載の方法。
- フィルム層でコーティングされた基材(6)を、該フィルム層の硬化後に別の基材と接合する、請求項1又は2に記載の方法。
- 基材(6)を、フィルム層材料(4)の塗布中に回転する、請求項1から3までのいずれか1項に記載の方法。
- 第一の基材(6)及び/又は第二の基材を、フィルム層材料(4)の塗布中に、特に、異なる、特に、有利には同心円の中心部(5)から縁部領域(11)に向かって減少する加熱温度で加熱する、請求項1から4までのいずれか1項に記載の方法。
- 基材(6)をフィルム層でコーティングするための装置において、該装置が、熱可塑性フィルム層材料(4)を塗布するための塗布手段(1)と、フィルム層を形成するために基材(6)にフィルム層材料(4)を分布するための分布手段とを有することを特徴とする、前記装置。
- 塗布手段(1)が、少なくとも1つの押出機デバイス(1)を含む、請求項6に記載の装置。
- 分布手段が、フィルム層材料(4)の塗布中に第一の基材(6)及び/又は第二の基材を回転するための回転手段を有する、請求項6又は7に記載の装置。
- 分布手段が、フィルム層材料(4)の塗布中に第一の基材(6)及び/又は第二の基材を加熱するための加熱手段を有する、請求項6から8までのいずれか1項に記載の装置。
- 加熱手段が、第一の基材(6)及び/又は第二の基材に、異なる、特に同心円の中心部(5)から縁部領域(11)に向かって減少する加熱温度をかけることができるように構成されている、請求項9に記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102015100579.4 | 2015-01-15 | ||
DE102015100579.4A DE102015100579A1 (de) | 2015-01-15 | 2015-01-15 | Verfahren und Vorrichtung zum Beschichten von Substraten |
PCT/EP2015/074517 WO2016113008A1 (de) | 2015-01-15 | 2015-10-22 | Verfahren und vorrichtung zum beschichten von substraten |
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JP2018505043A true JP2018505043A (ja) | 2018-02-22 |
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JP2017535861A Pending JP2018505043A (ja) | 2015-01-15 | 2015-10-22 | 基材をコーティングするための方法及び装置 |
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Country | Link |
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US (1) | US20180174832A1 (ja) |
EP (1) | EP3245669A1 (ja) |
JP (1) | JP2018505043A (ja) |
KR (1) | KR20170101939A (ja) |
CN (1) | CN107210246A (ja) |
DE (1) | DE102015100579A1 (ja) |
SG (1) | SG11201704981YA (ja) |
WO (1) | WO2016113008A1 (ja) |
Families Citing this family (2)
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JP7191458B2 (ja) * | 2018-08-06 | 2022-12-19 | 株式会社ディスコ | ウェーハの加工方法 |
WO2021121608A1 (de) | 2019-12-19 | 2021-06-24 | Ev Group E. Thallner Gmbh | Vereinzeltes verkapseltes bauelement und verfahren zu dessen herstellung |
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2015
- 2015-01-15 DE DE102015100579.4A patent/DE102015100579A1/de not_active Ceased
- 2015-10-22 KR KR1020177019061A patent/KR20170101939A/ko unknown
- 2015-10-22 JP JP2017535861A patent/JP2018505043A/ja active Pending
- 2015-10-22 WO PCT/EP2015/074517 patent/WO2016113008A1/de active Application Filing
- 2015-10-22 SG SG11201704981YA patent/SG11201704981YA/en unknown
- 2015-10-22 EP EP15794090.9A patent/EP3245669A1/de not_active Withdrawn
- 2015-10-22 CN CN201580072902.9A patent/CN107210246A/zh active Pending
- 2015-10-22 US US15/542,096 patent/US20180174832A1/en not_active Abandoned
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EP3245669A1 (de) | 2017-11-22 |
DE102015100579A1 (de) | 2016-07-21 |
WO2016113008A1 (de) | 2016-07-21 |
CN107210246A (zh) | 2017-09-26 |
SG11201704981YA (en) | 2017-07-28 |
US20180174832A1 (en) | 2018-06-21 |
KR20170101939A (ko) | 2017-09-06 |
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