WO2016095337A1 - 改善铜导线制程中刻蚀药液寿命与良率的方法及铜导线刻蚀装置 - Google Patents

改善铜导线制程中刻蚀药液寿命与良率的方法及铜导线刻蚀装置 Download PDF

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WO2016095337A1
WO2016095337A1 PCT/CN2015/072559 CN2015072559W WO2016095337A1 WO 2016095337 A1 WO2016095337 A1 WO 2016095337A1 CN 2015072559 W CN2015072559 W CN 2015072559W WO 2016095337 A1 WO2016095337 A1 WO 2016095337A1
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Prior art keywords
etching
etching solution
concentration
filtering
copper
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PCT/CN2015/072559
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English (en)
French (fr)
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张旭东
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深圳市华星光电技术有限公司
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Priority to US14/428,980 priority Critical patent/US9528188B2/en
Publication of WO2016095337A1 publication Critical patent/WO2016095337A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/34—Alkaline compositions for etching copper or alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/068—Apparatus for etching printed circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
    • H01L2221/1068—Formation and after-treatment of conductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067—Etchants

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a method and a copper wire etching apparatus for improving the life and yield of an etching solution in a copper wire process.
  • LCDs liquid crystal displays
  • Various consumer electronic products such as digital assistants, digital cameras, notebook computers, and desktop computers have become mainstream in display devices.
  • a liquid crystal display panel is composed of a color film substrate, an array substrate, a liquid crystal sandwiched between the color film substrate and the array substrate, and a sealant frame, wherein a metal wire is formed on the array substrate, and the resistance of the metal wire and the resistance thereof are
  • the RC delay has a great influence on the performance of the liquid crystal display panel, especially in the large-size, high-resolution liquid crystal panel.
  • an aluminum wire (Al) is generally used, and the aluminum wire has a high resistivity, and the resistance delay thereof is also large, which is difficult to apply to a large-sized, high-resolution liquid crystal.
  • Al aluminum wire
  • the etching solution usually used is a hydrogen peroxide system (H 2 O 2 ), and the etching solution has the following problems in use: the number of substrates to be etched The increase of the concentration of copper ions in the etching solution will also increase, and the chemical change of H 2 O 2 under the action of copper ions will accelerate decomposition.
  • H 2 O 2 hydrogen peroxide system
  • the reaction process is: Further, as the copper wire etching process continues, the concentration of copper ions in the etching solution is also increasing, and the decomposition rate of H 2 O 2 is also faster and faster. When the copper ion concentration exceeds 6000 ppm, H The decomposition rate of 2 O 2 will increase sharply, generating a large amount of gas, causing gas explosion on the machine. Therefore, when the concentration of copper ions in the etching solution exceeds 6000 ppm, the etching solution must be replaced again, which greatly limits the service life of the etching solution and increases the production cost. In addition, as the concentration of copper ions in the etching solution increases, the etching rate of the etching solution also changes, thereby affecting the stability and yield of the product.
  • the object of the present invention is to provide a method for improving the life and yield of an etching solution in a copper wire process, which can adjust the concentration of copper ions in the etching solution, improve the service life of the etching solution, reduce the production cost, and improve the production cost. Stability and yield of copper interconnect products.
  • Another object of the present invention is to provide a copper wire etching device capable of adjusting the concentration of copper ions in an etching solution, improving the service life of the etching solution, reducing the production cost, and improving the stability and goodness of the copper interconnect product. rate.
  • the present invention first provides a method for improving the life and yield of an etching solution in a copper wire process, comprising the following steps:
  • Step 1 Providing an etching spray tank and an etching solution tank communicating with the etching spray tank, wherein the etching liquid tank is provided with an etching liquid;
  • Step 2 measuring the concentration of copper ions in the etching solution of the etching solution tank by using the first concentration monitoring device, and filtering the etching solution in the etching solution tank by using a filtering device;
  • Step 3 measuring the copper ion concentration of the etched chemical solution filtered by the step 2 by using the second concentration monitoring device, and controlling the number of the filtering devices for performing the filtering operation in the step 2, and flowing the filtered etchant liquid back Etching the solution tank.
  • the etching solution used in the step 1 is a hydrogen peroxide etching solution.
  • the filtering device in the step 2 is provided with one or several reverse osmosis membranes capable of filtering copper ions connected in series, or one or several filter cloths capable of filtering copper ions connected in series, or a plurality of filters capable of filtering in series Copper ion reverse osmosis membrane and filter cloth.
  • the number of filtering devices that open the filtering operation is controlled by a control device, and the filtering devices are connected in series.
  • the copper wire etching method is used for preparing an array substrate interconnected by copper wires; the first concentration monitoring device in the step 2 further measures a hydrogen peroxide concentration in the etching solution, and an additive concentration; The second concentration monitoring device also measures the hydrogen peroxide concentration in the etching solution and the additive concentration.
  • the present invention also provides a copper wire etching apparatus, comprising: an etching spray tank, an etching liquid tank communicating with the etching spray tank, and a liquid medicine pump connected to the etching liquid tank, And one or more filtering devices in communication with the liquid medicine pump, the filtering device is in communication with the etching solution tank, and further includes a first concentration monitoring device for monitoring the etching solution in the etching solution tank Copper ion concentration;
  • the filtering device is used for filtering copper ions in the etching solution to reduce the concentration of copper ions in the etching solution.
  • the first concentration monitoring device is disposed in the etching solution tank, or between the etching solution tank and the liquid medicine pump, or between the medicine liquid pump and the filtering device.
  • a second concentration monitoring device is further disposed between the filtering device and the etching solution tank for monitoring the copper ion concentration of the filtered etching solution; the first concentration monitoring The device also monitors the hydrogen peroxide concentration of the etching solution in the etching solution tank and the additive concentration, and the second concentration monitoring device also monitors the hydrogen peroxide concentration of the filtered etching solution and the additive concentration.
  • the plurality of filtering devices are connected in series, and the copper wire etching device further comprises a control device, wherein the control device is respectively associated with the first concentration monitoring device, the second concentration monitoring device, and each filtering device Electrically connected to control whether each filter device performs filtering according to the results of concentration monitoring.
  • Each of the filtering devices comprises one or several reverse osmosis membranes capable of filtering copper ions in series with each other, or one or several filter cloths capable of filtering copper ions in series with each other, or a plurality of copper ions capable of filtering copper ions in series with each other.
  • Reverse osmosis membrane and filter cloth are examples of reverse osmosis membranes capable of filtering copper ions in series with each other.
  • the copper wire etching apparatus is used for a process of an array substrate in which copper wires are interconnected.
  • the invention also provides a method for improving the life and yield of an etching solution in a copper wire process, comprising the steps of:
  • Step 1 Providing an etching spray tank and an etching solution tank communicating with the etching spray tank, wherein the etching liquid tank is provided with an etching liquid;
  • Step 2 measuring the concentration of copper ions in the etching solution of the etching solution tank by using the first concentration monitoring device, and filtering the etching solution in the etching solution tank by using a filtering device;
  • Step 3 measuring the copper ion concentration of the etched chemical solution filtered by the step 2 by using the second concentration monitoring device, and controlling the number of the filtering devices for performing the filtering operation in the step 2, and flowing the filtered etchant liquid back Etching the solution tank;
  • the etching liquid used in the step 1 is a hydrogen peroxide etching liquid
  • the filtering device in the step 2 is provided with one or several reverse osmosis membranes capable of filtering copper ions connected in series, or one or several filter cloths capable of filtering copper ions connected in series, or several connected in series A reverse osmosis membrane and a filter cloth capable of filtering copper ions.
  • the present invention provides a method for improving the life and yield of an etching solution in a copper wire process and a copper wire etching device, which are engraved by adding a filtering device during the circulation of the etching solution.
  • the copper ions in the etching solution are continuously filtered, and the filtered etching solution is returned to the etching solution tank for recycling, thereby reducing the concentration of copper ions in the etching solution and improving the engraving.
  • the service life of the etchant liquid reduces the production cost and improves the stability and yield of the copper interconnect product.
  • FIG. 2 is a schematic structural view of a copper wire etching apparatus of the present invention.
  • the present invention first provides a method for improving the life and yield of an etching solution in a copper wire process, including the following steps:
  • Step 1 providing an etching spray tank 1 and an etching solution tank 2 communicating with the etching spray tank 1, the etching solution tank 2 is provided with an etching liquid;
  • the etching solution used in the step 1 is a hydrogen peroxide etching solution.
  • Step 2 measuring the concentration of copper ions in the etching solution of the etching solution tank 2 by using the first concentration monitoring device 4, and performing copper ion filtering on the etching solution in the etching solution tank 2 by using the filtering device 5;
  • the filtering device 5 in the step 2 is provided with one or several reverse osmosis membranes capable of filtering copper ions connected in series, or one or several filter cloths capable of filtering copper ions connected in series, or several mutual A reverse osmosis membrane and a filter cloth capable of filtering copper ions in series.
  • a plurality of filtering devices 5 are used, and the filtering devices 5 are connected in series.
  • the filtered copper ions can be collected by a method of setting a recovery tank to facilitate the reuse of copper ions.
  • the first concentration monitoring device 4 may be directly disposed in the etching solution tank 2 or between the etching solution tank 2 and the liquid medicine pump 3, and respectively etching the liquid tank 2 and the medicine
  • the liquid pump 3 is connected or disposed between the liquid medicine pump 3 and the filtering device 5, and is respectively connected with the liquid medicine pump 3 and the filtering device 5 for monitoring the concentration of copper ions in the etching liquid tank 2 to ensure etching. Normal use of the etching solution in the solution tank 2.
  • the first concentration monitoring device 4 also measures the hydrogen peroxide concentration in the etching solution and the additive concentration, so as to facilitate the timely increase of the additive to ensure the etching solution quality and the copper wire etching effect.
  • Step 3 The second concentration monitoring device is used to measure the copper ion concentration of the etched chemical solution filtered in the step 2, and the number of the filtering devices 5 for performing the filtering operation in the control step 2 is used to filter the etched medicinal solution flow.
  • the etching solution tank 2 is etched back.
  • the filtering of the filtering operation is controlled by a control device. Number of devices 5. If the concentration of copper ions in the filtered etching solution is lower than the concentration of copper ions in the required etching solution, the number of filtering devices 5 that open the filtering operation is reduced, and if the copper in the etching solution is filtered, The ion concentration is higher than the required concentration of copper ions in the etching solution, thereby increasing the number of filtering devices 5 that open the filtering operation, and can also be automatically adjusted by setting a program in the control device to maintain the copper ion concentration. The best stable value.
  • the step 3 further includes measuring the hydrogen peroxide concentration and the additive concentration in the etching solution filtered by the filtering device 5 through the second concentration monitoring device 6; wherein the concentration of the copper ions in the filtered etching solution is monitored, In order to ensure the filtration effect; monitor the concentration of hydrogen peroxide in the etching solution and the concentration of the additive, when the additive concentration loss is caused by the filtering device, the additive is added in time to ensure the etching solution quality and the etching effect of the copper wire.
  • the copper wire etching method is used for the fabrication of an array substrate interconnected with copper wires.
  • the present invention further provides a copper wire etching apparatus, comprising: etching a shower tank 1, an etching solution tank 2 communicating with the etching shower tank 1, and the etching agent a liquid medicine pump 3 connected to the liquid tank 2, and one or more filtering devices 5 communicating with the liquid medicine pump 3, the filtering device 5 is in communication with the etching liquid tank 2, and further includes a first concentration monitoring device 4, for monitoring the concentration of copper ions in the etching solution in the etching solution 2; the filtering device 5 is used for filtering copper ions in the etching solution to reduce the concentration of copper ions in the etching solution.
  • the first concentration monitoring device 4 can be directly disposed in the etching solution tank 2 or between the etching solution tank 2 and the liquid medicine pump 3, and separately etching the liquid tank 2 and the medicine.
  • the liquid pump 3 is connected or disposed between the liquid medicine pump 3 and the filtering device 5, and is respectively connected with the liquid medicine pump 3 and the filtering device 5 for monitoring the concentration of copper ions in the etching liquid tank 2 to ensure etching. Normal use of the etching solution in the solution tank 2.
  • the first concentration monitoring device 4 also measures the concentration of hydrogen peroxide in the etching solution and the concentration of the additive, which is beneficial to increasing the additive in time to ensure the etching solution quality and the copper wire etching effect.
  • the filtering device 5 is used for filtering copper ions in the etching solution to reduce the concentration of copper ions in the etching solution, and the filtering device 5 is any device capable of filtering copper ions.
  • the filtering device 5 may have one or several reverse osmosis membranes capable of filtering copper ions in series with each other, which can realize rapid filtration of copper ions, and can be periodically replaced according to the use efficiency of the reverse osmosis membrane to ensure the filtration quality.
  • the filtering device 5 may also have one or several mutual A filter cloth capable of filtering copper ions in series.
  • the filtering device 5 may also have a plurality of reverse osmosis membranes and filter cloths capable of filtering copper ions in series with each other.
  • the filtering device 5 may further include a recovery tank (not shown) for collecting the filtered copper ions to facilitate the reuse of copper ions.
  • the copper wire etching apparatus further includes a second concentration monitoring device 6 connected to the filtering device 5 and the etching solution tank 2 for monitoring the filtered etching agent.
  • the concentration of copper ions in the liquid to ensure the filtration effect.
  • the second concentration monitoring device 6 can also monitor the hydrogen peroxide concentration and the additive concentration in the etching solution, and add the additive concentration caused by the filtering device 5 according to the monitoring data. loss.
  • the amount of the filter device 5 can be increased or decreased according to the copper ion concentration required by the etching process.
  • the copper wire etching apparatus may further include a control device electrically connected to the first concentration monitoring device 4, the second concentration monitoring device 6, and each filtering device 5, respectively, for controlling Whether or not the filtering operation is turned on for each filtering device 5.
  • the control device acquires copper ion concentration data in the etching solution before filtering from the first concentration monitoring device 4, and acquires copper ion concentration data in the filtered etching solution from the second concentration monitoring device 6.
  • the concentration of copper ions in the etching solution can be adjusted in real time, and further, the automatic adjustment can be realized by setting a program in the control device to maintain the copper ion concentration at an optimum stable value.
  • the copper wire etching apparatus is used for the process of an array substrate interconnected by copper wires.
  • the present invention provides a method for improving the life and yield of an etching solution in a copper wire process and a copper wire etching device, which are etched by adding a filtering device during the circulation of the etching solution.
  • the copper ions in the liquid are continuously filtered, and the filtered etching solution is returned to the etching solution tank for recycling, thereby reducing the concentration of copper ions in the etching solution and improving the use of the etching solution. Life expectancy, reduce production costs, improve the stability and production yield of copper interconnect products.

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Abstract

一种改善铜导线制程中刻蚀药液寿命与良率的方法及铜导线刻蚀装置，该方法包括：步骤1、提供一刻蚀喷淋槽(1)、及与所述刻蚀喷淋槽(1)连通的刻蚀药液槽(2)，所述刻蚀药液槽(2)容置有刻蚀药液；步骤2、采用第一浓度监控装置(4)测量刻蚀药液槽(2)的刻蚀药液中的铜离子浓度，采用过滤装置(5)对刻蚀药液槽(2)中的刻蚀药液进行铜离子过滤；步骤3、采用第二浓度监控装置(6)测量所述步骤2过滤后的刻蚀药液的铜离子浓度，控制步骤2中进行过滤工作的过滤装置(5)的数量，将过滤后的刻蚀药液流回刻蚀药液槽(2)。该方法能够降低刻蚀药液中的铜离子浓度，提高刻蚀药液的使用寿命，降低生产成本，提高铜互连产品的稳定性及生产良率。

Description

改善铜导线制程中刻蚀药液寿命与良率的方法及铜导线刻蚀装置 技术领域
本发明涉及显示技术领域，尤其涉及一种改善铜导线制程中刻蚀药液寿命与良率的方法及铜导线刻蚀装置。
背景技术
随着显示技术的发展，液晶显示器(Liquid Crystal Display，LCD)等平面显示装置因具有高画质、省电、机身薄及应用范围广等优点，而被广泛的应用于手机、电视、个人数字助理、数字相机、笔记本电脑、台式计算机等各种消费性电子产品，成为显示装置中的主流。
通常液晶显示面板由彩膜基板、阵列基板、夹于彩膜基板与阵列基板之间的液晶及密封胶框组成，其中在阵列基板形成有金属导线，该金属导线的电阻及其电阻带来的阻容延迟(RC Delay)对液晶显示面板的性能有很大影响，尤其在大尺寸、高解析度的液晶面板中更为突出。现有液晶显示面板的阵列基板中通常采用铝导线(Al)，而铝导线具有较高的电阻率，随之带来的阻容延迟也较大，难以应用于大尺寸，高解析度的液晶显示面板中。
相比于铝导线，铜导线(Cu)具有较低的电阻率，随之带来的阻容延迟也较小，可以满足液晶显示面板不断的大尺寸化，高解析度的要求。然而，在目前的铜导线刻蚀过程中，通常采用的刻蚀药液为双氧水系(H2O2)，该刻蚀药液在使用时会存在以下问题：随着刻蚀的基板片数的增加，刻蚀药液中铜离子的浓度也会不断上升，而H2O2在铜离子的作用下会有加速分解的化学变化，反应过程为：
Figure PCTCN2015072559-appb-000001
进一步的，随着铜导线刻蚀过程的不断进行，刻蚀药液中铜离子的浓度的也不断增加，H2O2的分解速率也越来越快，当铜离子浓度超过6000ppm时，H2O2的分解速率将急剧加大，产生大量气体，导致机台发生气爆。因此，当刻蚀药液中的铜离子浓度超过6000ppm时，必须重新更换刻蚀药液，大大限制了刻蚀药液的使用寿命，增加了生产成本。此外，随着刻蚀药液中铜离 子浓度的增加，刻蚀药液的刻蚀速率也会发生变化，从而影响产品的稳定性及良率。
发明内容
本发明的目的在于提供一种改善铜导线制程中刻蚀药液寿命与良率的方法，能够调节刻蚀药液中铜离子的浓度，提高刻蚀药液的使用寿命，降低生产成本，提高铜互连产品的稳定性及良率。
本发明的目的还在于提供一种铜导线刻蚀装置，能够调节刻蚀药液中铜离子的浓度，提高刻蚀药液的使用寿命，降低生产成本，提高铜互连产品的稳定性及良率。
为实现上述目的，本发明首先提供一种改善铜导线制程中刻蚀药液寿命与良率的方法，包括以下步骤：
步骤1、提供一刻蚀喷淋槽、及与所述刻蚀喷淋槽连通的刻蚀药液槽，所述刻蚀药液槽容置有刻蚀药液；
步骤2、采用第一浓度监控装置测量刻蚀药液槽的刻蚀药液中的铜离子浓度，采用过滤装置对刻蚀药液槽中的刻蚀药液进行铜离子过滤；；
步骤3、采用第二浓度监控装置测量所述步骤2过滤后的刻蚀药液的铜离子浓度，控制步骤2中采用进行过滤工作的过滤装置的数量，将过滤后的刻蚀药液流回刻蚀药液槽。
所述步骤1中采用的刻蚀药液为双氧水系刻蚀药液。
所述步骤2中的过滤装置设有一个或数个串联连通的能够过滤铜离子的反渗透膜，或者一个或数个相互串联的能够过滤铜离子的滤布，或者数个相互串联的能够过滤铜离子的反渗透膜与滤布。
根据第一浓度监控装置和第二浓度监控装置测量到的刻蚀药液中的铜离子浓度的变化量，通过一控制装置控制开启过滤工作的过滤装置数量，所述过滤装置之间串联连通。
所述铜导线刻蚀方法用于采用铜导线互连的阵列基板的制备；所述步骤2中的第一浓度监控装置还测量刻蚀药液中的双氧水浓度、及添加剂浓度；所述步骤3中的第二浓度监控装置还测量刻蚀药液中的双氧水浓度、及添加剂浓度。
本发明还提供一种铜导线刻蚀装置，包括：刻蚀喷淋槽、与所述刻蚀喷淋槽连通的刻蚀药液槽、与所述刻蚀药液槽连通的药液泵、及与所述药液泵连通的一个或多个过滤装置，所述过滤装置与刻蚀药液槽连通，还包括一第一浓度监控装置，用于监控刻蚀药液槽中刻蚀药液的铜离子浓度；
所述过滤装置用于过滤刻蚀药液中的铜离子，降低刻蚀药液中的铜离子浓度。
所述第一浓度监控装置设于所述刻蚀药液槽内，或者设于刻蚀药液槽与药液泵之间，或者设于药液泵与过滤装置之间。
还包括一第二浓度监控装置，所述第二浓度监控装置设置在过滤装置与刻蚀药液槽之间，用于监控过滤后的刻蚀药液的铜离子浓度；所述第一浓度监控装置还监控刻蚀药液槽中刻蚀药液的双氧水浓度、及添加剂浓度，所述第二浓度监控装置还监控过滤后的刻蚀药液的双氧水浓度、及添加剂浓度。
所述过滤装置为多个，其之间串联连通，所述铜导线刻蚀装置还包括一控制装置，所述控制装置分别与第一浓度监控装置、第二浓度监控装置、及每一过滤装置电性相连，用于根据浓度监控的结果控制每一过滤装置是否进行过滤工作。
所述每一过滤装置包括一个或数个相互串联的能够过滤铜离子的反渗透膜，或者一个或数个相互串联的能够过滤铜离子的滤布，或者数个相互串联的能够过滤铜离子的反渗透膜与滤布。
所述铜导线刻蚀装置用于采用铜导线互连的阵列基板的制程。
本发明还提供一种改善铜导线制程中刻蚀药液寿命与良率的方法，包括以下步骤：
步骤1、提供一刻蚀喷淋槽、及与所述刻蚀喷淋槽连通的刻蚀药液槽，所述刻蚀药液槽容置有刻蚀药液；
步骤2、采用第一浓度监控装置测量刻蚀药液槽的刻蚀药液中的铜离子浓度，采用过滤装置对刻蚀药液槽中的刻蚀药液进行铜离子过滤；
步骤3、采用第二浓度监控装置测量所述步骤2过滤后的刻蚀药液的铜离子浓度，控制步骤2中采用进行过滤工作的过滤装置的数量，将过滤后的刻蚀药液流回刻蚀药液槽；
其中，所述步骤1中采用的刻蚀药液为双氧水系刻蚀药液；
其中，所述步骤2中的过滤装置设有一个或数个串联连通的能够过滤铜离子的反渗透膜，或者一个或数个相互串联的能够过滤铜离子的滤布，或者数个相互串联的能够过滤铜离子的反渗透膜与滤布。
本发明的有益效果：本发明提供了一种改善铜导线制程中刻蚀药液寿命与良率的方法及铜导线刻蚀装置，通过在刻蚀药液的循环过程中增加过滤装置，使得刻蚀药液中的铜离子被不断的过滤，将过滤后的刻蚀药液回流至刻蚀药液槽内循环利用，从而降低刻蚀药液中的铜离子浓度，提高刻 蚀药液的使用寿命，降低生产成本，提高铜互连产品的稳定性及良率。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明的铜导线刻蚀方法的流程图，
图2为本发明的铜导线刻蚀装置的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1并结合图2，本发明首先提供一种改善铜导线制程中刻蚀药液寿命与良率的方法，包括以下步骤：
步骤1、提供一刻蚀喷淋槽1、及与所述刻蚀喷淋槽1连通的刻蚀药液槽2，所述刻蚀药液槽2容置有刻蚀药液；
具体的，所述步骤1中采用的刻蚀药液为双氧水系刻蚀药液。
步骤2、采用第一浓度监控装置4测量刻蚀药液槽2的刻蚀药液中的铜离子浓度，采用过滤装置5对刻蚀药液槽2中的刻蚀药液进行铜离子过滤；
具体的，所述步骤2中的过滤装置5设有一个或数个串联连通的能够过滤铜离子的反渗透膜，或者一个或数个相互串联的能够过滤铜离子的滤布，或者数个相互串联的能够过滤铜离子的反渗透膜与滤布。步骤2中采用数个过滤装置5，所述过滤装置5之间串联连通。进一步的，可以通过设置回收槽的方法来收集过滤后的铜离子，便于铜离子的再利用。
所述第一浓度监控装置4可以直接设于所述刻蚀药液槽2内，或者设于刻蚀药液槽2与药液泵3之间，且分别与刻蚀药液槽2与药液泵3连通，或者设于药液泵3与过滤装置5之间，且分别与药液泵3与过滤装置5连通，用于监控刻蚀药液槽2中的铜离子浓度，保证刻蚀药液槽2中的刻蚀药液的正常使用。此外，该第一浓度监控装置4还测量刻蚀药液中的双氧水浓度、及添加剂浓度，以利于及时增加添加剂，保证刻蚀药液质量与铜导线刻蚀效果。
步骤3、采用第二浓度监控装置测量所述步骤2过滤后的刻蚀药液的铜离子浓度，控制步骤2中采用进行过滤工作的过滤装置5的数量，将过滤后的刻蚀药液流回刻蚀药液槽2。
需要说明的是，所述步骤3中根据第一浓度监控装置4和第二浓度监控装置6测量到的刻蚀药液中的铜离子浓度的变化量，通过一控制装置控制开启过滤工作的过滤装置5数量。若过滤后的刻蚀药液中的铜离子浓度低于要求的刻蚀药液中的铜离子浓度，则减少开启过滤工作的过滤装置5的数量，若过滤后的刻蚀药液中的铜离子浓度高于要求的刻蚀药液中的铜离子浓度，则增加开启过滤工作的过滤装置5的数量，还可以通过在控制装置中设定程序可以实现自动调节，来使铜离子浓度保持一个最佳稳定值。
所述步骤3中还包括通过第二浓度监控装置6测量经过滤装置5过滤后的刻蚀药液中的双氧水浓度、及添加剂浓度；其中监控过滤后的刻蚀药液中的铜离子浓度，以保证过滤效果；监控刻蚀药液中的双氧水浓度、添加剂浓度，在过滤装置造成添加剂浓度损失时，及时增加添加剂，保证刻蚀药液质量与铜导线刻蚀效果。
最后，所述铜导线刻蚀方法用于采用铜导线互连的阵列基板的制备。
请参阅图2，本发明还提供一种铜导线刻蚀装置，包括：刻蚀喷淋槽1、与所述刻蚀喷淋槽1连通的刻蚀药液槽2、与所述刻蚀药液槽2连通的药液泵3、及与所述药液泵3连通的一个或多个过滤装置5，所述过滤装置5与刻蚀药液槽2连通，还包括一第一浓度监控装置4，用于监控刻蚀药液槽2中刻蚀药液的铜离子浓度；所述过滤装置5用于过滤刻蚀药液中的铜离子，降低刻蚀药液中的铜离子浓度。
其中，第一浓度监控装置4可以直接设于所述刻蚀药液槽2内，或者设于刻蚀药液槽2与药液泵3之间，且分别与刻蚀药液槽2与药液泵3连通，或者设于药液泵3与过滤装置5之间，且分别与药液泵3与过滤装置5连通，用于监控刻蚀药液槽2中的铜离子浓度，保证刻蚀药液槽2中的刻蚀药液的正常使用。此外，该第一浓度监控装置4还测量刻蚀药液中的双氧水浓度、及添加剂浓度，利于及时增加添加剂，保证刻蚀药液质量与铜导线刻蚀效果。
特别的，所述过滤装置5用于过滤刻蚀药液中的铜离子，降低刻蚀药液中的铜离子浓度，该过滤装置5为任何可以过滤铜离子的装置。具体的，所述过滤装置5可以具有一个或数个相互串联连通的能够过滤铜离子的反渗透膜，可实现快速过滤铜离子，可根据反渗透膜的使用效率定期更换，以保证过滤质量。进一步的，所述过滤装置5还可以具有一个或数个相互 串联连通的能够过滤铜离子的滤布。所述过滤装置5还可以具有数个相互串联的能够过滤铜离子的反渗透膜与滤布。此外，所述过滤装置5还可以包括回收槽(未图示)，用于收集过滤后的铜离子，便于铜离子的再利用。
所述铜导线刻蚀装置还包括一第二浓度监控装置6，所述第二浓度监控装置6分别与过滤装置5、及刻蚀药液槽2相连通，用于监控过滤后的刻蚀药液中的铜离子浓度，以保证过滤效果，同时，所述第二浓度监控装置6还可以监控刻蚀药液中的双氧水浓度、添加剂浓度，根据监控数据及时添加因过滤装置5造成的添加剂浓度损失。
此外，可根据刻蚀工艺要求的铜离子浓度增加或减少过滤装置5的数量。优选的，所述铜导线刻蚀装置还可以包括一控制装置，所述控制装置分别与第一浓度监控装置4、第二浓度监控装置6、及每一过滤装置5电性连接，用于控制每一过滤装置5的是否开启过滤工作。具体的，所述控制装置从第一浓度监控装置4获取过滤前的刻蚀药液中的铜离子浓度数据，从第二浓度监控装置6获取过滤后的刻蚀药液中的铜离子浓度数据，并根据过滤前、后的刻蚀药液中的铜离子浓度的变化量、及刻蚀工艺要求的铜离子浓度数据，监控过滤效果是否达标，若过滤后的刻蚀药液中的铜离子浓度低于要求的刻蚀药液中的铜离子浓度，则减少开启过滤工作的过滤装置5的数量，若过滤后的刻蚀药液中的铜离子浓度高于要求的刻蚀药液中的铜离子浓度，则增加开启过滤工作的过滤装置5的数量。至此，可以做到实时调节刻蚀药液中的铜离子的浓度，进一步的，还可以通过在控制装置中设定程序实现自动调节，来使铜离子浓度保持一个最佳稳定值。
最后，所述铜导线刻蚀装置用于采用铜导线互联的阵列基板的制程。
综上所述，本发明提供了一种改善铜导线制程中刻蚀药液寿命与良率的方法及铜导线刻蚀装置，通过在刻蚀药液的循环过程中增加过滤装置，使得刻蚀药液中的铜离子被不断的过滤，并将过滤后的刻蚀药液回流至刻蚀药液槽内循环利用，从而降低刻蚀药液中的铜离子浓度，提高刻蚀药液的使用寿命，降低生产成本，提高铜互连产品的稳定性及生产良率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (13)

  1. 一种改善铜导线制程中刻蚀药液寿命与良率的方法，包括以下步骤：
    步骤1、提供一刻蚀喷淋槽、及与所述刻蚀喷淋槽连通的刻蚀药液槽，所述刻蚀药液槽容置有刻蚀药液；
    步骤2、采用第一浓度监控装置测量刻蚀药液槽的刻蚀药液中的铜离子浓度，采用过滤装置对刻蚀药液槽中的刻蚀药液进行铜离子过滤；
    步骤3、采用第二浓度监控装置测量所述步骤2过滤后的刻蚀药液的铜离子浓度，控制步骤2中采用进行过滤工作的过滤装置的数量，将过滤后的刻蚀药液流回刻蚀药液槽。
  2. 如权利要求1所述的改善铜导线制程中刻蚀药液寿命与良率的方法，其中，所述步骤1中采用的刻蚀药液为双氧水系刻蚀药液。
  3. 如权利要求1所述的改善铜导线制程中刻蚀药液寿命与良率的方法，其中，所述步骤2中的过滤装置设有一个或数个串联连通的能够过滤铜离子的反渗透膜，或者一个或数个相互串联的能够过滤铜离子的滤布，或者数个相互串联的能够过滤铜离子的反渗透膜与滤布。
  4. 如权利要求1所述的改善铜导线制程中刻蚀药液寿命与良率的方法，其中，所述步骤3中根据第一浓度监控装置和第二浓度监控装置测量到的刻蚀药液中的铜离子浓度的变化量，通过一控制装置控制开启过滤工作的过滤装置的数量，所述过滤装置之间串联连通。
  5. 如权利要求1所述的改善铜导线制程中刻蚀药液寿命与良率的方法，其中，所述铜导线刻蚀方法用于采用铜导线互连的阵列基板的制备；所述步骤2中的第一浓度监控装置还测量刻蚀药液中的双氧水浓度、及添加剂浓度；所述步骤3中的第二浓度监控装置还测量刻蚀药液中的双氧水浓度、及添加剂浓度。
  6. 一种铜导线刻蚀装置，包括：刻蚀喷淋槽、与所述刻蚀喷淋槽连通的刻蚀药液槽、与所述刻蚀药液槽连通的药液泵、及与所述药液泵连通的一个或多个过滤装置，所述过滤装置与刻蚀药液槽连通，还包括一第一浓度监控装置，用于监控刻蚀药液槽中刻蚀药液的铜离子浓度；所述过滤装置用于过滤刻蚀药液中的铜离子，降低刻蚀药液中的铜离子浓度。
  7. 如权利要求6所述的铜导线刻蚀装置，其中，所述第一浓度监控装置设于所述刻蚀药液槽内，或者设于刻蚀药液槽与药液泵之间，或者设于药液泵与过滤装置之间。
  8. 如权利要求6所述的铜导线刻蚀装置，其中，还包括一第二浓度监控装置，所述第二浓度监控装置设置在过滤装置与刻蚀药液槽之间，用于监控过滤后的刻蚀药液的铜离子浓度；所述第一浓度监控装置还监控刻蚀药液槽中刻蚀药液的双氧水浓度、及添加剂浓度，所述第二浓度监控装置还监控过滤后的刻蚀药液的双氧水浓度、及添加剂浓度。
  9. 如权利要求8所述的铜导线刻蚀装置，其中，所述过滤装置为多个，其之间串联连通，所述铜导线刻蚀装置还包括一控制装置，所述控制装置分别与第一浓度监控装置、第二浓度监控装置、及每一过滤装置电性相连，用于根据浓度监控的结果控制每一过滤装置是否进行过滤工作。
  10. 如权利要求6所述的铜导线刻蚀装置，其中，所述每一过滤装置包括一个或数个相互串联的能够过滤铜离子的反渗透膜，或者一个或数个相互串联的能够过滤铜离子的滤布，或者数个相互串联的能够过滤铜离子的反渗透膜与滤布；所述铜导线刻蚀装置用于采用铜导线互连的阵列基板的制程。
  11. 一种改善铜导线制程中刻蚀药液寿命与良率的方法，包括以下步骤：
    步骤1、提供一刻蚀喷淋槽、及与所述刻蚀喷淋槽连通的刻蚀药液槽，所述刻蚀药液槽容置有刻蚀药液；
    步骤2、采用第一浓度监控装置测量刻蚀药液槽的刻蚀药液中的铜离子浓度，采用过滤装置对刻蚀药液槽中的刻蚀药液进行铜离子过滤；
    步骤3、采用第二浓度监控装置测量所述步骤2过滤后的刻蚀药液的铜离子浓度，控制步骤2中采用进行过滤工作的过滤装置的数量，将过滤后的刻蚀药液流回刻蚀药液槽；
    其中，所述步骤1中采用的刻蚀药液为双氧水系刻蚀药液；
    其中，所述步骤2中的过滤装置设有一个或数个串联连通的能够过滤铜离子的反渗透膜，或者一个或数个相互串联的能够过滤铜离子的滤布，或者数个相互串联的能够过滤铜离子的反渗透膜与滤布。
  12. 如权利要求11所述的改善铜导线制程中刻蚀药液寿命与良率的方法，其中，所述步骤3中根据第一浓度监控装置和第二浓度监控装置测量到的刻蚀药液中的铜离子浓度的变化量，通过一控制装置控制开启过滤工作的过滤装置的数量，所述过滤装置之间串联连通。
  13. 如权利要求11所述的改善铜导线制程中刻蚀药液寿命与良率的方法，其中，所述铜导线刻蚀方法用于采用铜导线互连的阵列基板的制备；所述步骤2中的第一浓度监控装置还测量刻蚀药液中的双氧水浓度、及添 加剂浓度；所述步骤3中的第二浓度监控装置还测量刻蚀药液中的双氧水浓度、及添加剂浓度。
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