CN105977186B - 湿法刻蚀装置及其防爆方法 - Google Patents

湿法刻蚀装置及其防爆方法 Download PDF

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CN105977186B
CN105977186B CN201610307235.4A CN201610307235A CN105977186B CN 105977186 B CN105977186 B CN 105977186B CN 201610307235 A CN201610307235 A CN 201610307235A CN 105977186 B CN105977186 B CN 105977186B
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CN105977186A (zh
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李嘉
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明提供一种湿法刻蚀装置及其防爆方法，利用加热器(22)监控储液箱(2)内的温度，当储液箱(2)内的温度达到预设的温度上限时，通过控制装置(23)自动关闭加热器(22)，打开腔室清洗装置(11)喷出清洗水，清洗水对刻蚀反应腔(1)进行冲洗后，回流至储液箱(2)内并与储液箱(2)内的刻蚀药液中和，使得储液箱(2)内的温度降低，能够有效监控并及时降低储液箱(2)内的温度，防止储液箱(2)内的温度过高发生爆炸，保障生产安全，提升生产稼动率。

Description

湿法刻蚀装置及其防爆方法
技术领域
本发明涉及半导体制程技术领域，尤其涉及一种湿法刻蚀装置及其防爆方法。
背景技术
液晶显示装置(Liquid Crystal Display，LCD)具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。如：液晶电视、移动电话、个人数字助理(PDA)、数字相机、计算机屏幕或笔记本电脑屏幕等，在平板显示领域中占主导地位。
随着薄膜晶体管液晶显示器(Thin Film Transistor-Liquid Crystal Display，TFT-LCD)逐渐往超大尺寸、高驱动频率、高分辨率等方面发展，如何有效地降低面板导线电阻与寄生电容日趋重要。薄膜晶体管液晶显示器在制作时，高质量的导线制程技术已经成为主宰薄膜晶体管组件与面板特性的关键。
薄膜晶体管阵列基板中的金属导线是将溅射在薄膜晶体管阵列基板上的金属层通过蚀刻工艺制成，常规应用于薄膜晶体管阵列基板中的金属导线为铝导线，随着电视等液晶显示终端的大尺寸化、高解析度以及驱动频率高速化的发展趋势及要求，液晶显示领域技术人员不得不面对薄膜晶体管阵列基板中电阻及所造成的电阻或电容时间延迟问题，而铝导线具有较高的电阻率使得薄膜晶体管阵列基板的像素电极不能够充分充电，随着高频寻址液晶显示的广泛应用，这一现象更加明显。
由于铜导线制程具有低电阻、低延迟现象等优点，可以让讯号寻址速度更快、扫描线更密集，显示画质更清新，在铜制程良率提升之后，超高清分辨率的高画质面板的生产成本可望进一步降低；目前大尺寸薄膜晶体管液晶显示器中的导线普遍用铜取代铝，目前的铜导线刻蚀过程中，通常采用的刻蚀药液为双氧水系(H2O2)，该刻蚀药液在使用时会存在以下问题：随着刻蚀制程的持续，刻蚀药液中铜离子的浓度也会不断上升，而H2O2在铜离子的作用下会有加速分解的化学变化，反应过程为：进一步的，随着铜导线刻蚀过程的不断进行，刻蚀药液中铜离子的浓度的也不断增加，H2O2的分解速率也越来越快，H2O2的分解速率将急剧加大，产生大量气体和热量，极易导致机台发生爆炸。
发明内容
本发明的目的在于提供一种湿法刻蚀装置，能够有效监控并及时降低储液箱内的温度，防止储液箱内的温度过高发生爆炸，保障生产安全，提升生产稼动率。
本发明的目的还在于提供一种湿法刻蚀装置的防爆方法，能够有效监控并及时降低储液箱内的温度，防止储液箱内的温度过高发生爆炸，保障生产安全，提升生产稼动率。
为实现上述目的，本发明首先提供一种湿法刻蚀装置，包括：刻蚀反应腔、设于所述刻蚀反应腔内的腔室清洗装置、与刻蚀反应腔连通的储液箱、设于所述储液箱内的加热器、设于储液箱底部并与所述储液箱连通的排液管、设于储液箱侧上方表面的溢流口、连通所述溢流口和排液管的溢流管、以及与所述腔室清洗装置、加热器电性连接的控制装置；
所述储液箱容置刻蚀药液，所述加热器加热刻蚀药液并监控储液箱内的温度，所述控制装置在储液箱内的温度达到预设的温度上限时关闭加热器，打开腔室清洗装置喷出清洗水，降低储液箱内的温度。
所述湿法刻蚀装置用于铜金属刻蚀制程。
所述清洗水为去离子水。
所述刻蚀药液为双氧水系刻蚀药液。
所述控制装置为PLC。
本发明还提供一种湿法刻蚀装置的防爆方法，包括如下步骤：
步骤1、提供一湿法刻蚀装置，包括：刻蚀反应腔、设于所述刻蚀反应腔内的腔室清洗装置、与刻蚀反应腔连通的储液箱、设于所述储液箱内的加热器、设于储液箱底部并与所述储液箱连通的排液管、设于储液箱侧上方表面的溢流口、连通所述溢流口和排液管的溢流管、以及与所述腔室清洗装置、加热器电性连接的控制装置；
步骤2、所述储液箱内容置刻蚀药液，所述加热器对所述刻蚀药液进行加热，同时所述加热器监控所述储液箱内的温度，并将温度数据传输给控制装置；
步骤3、所述控制装置判断当前储液箱内的温度是否达到预设的温度上限，若当前储液箱内的温度达到预设的温度上限，则关闭加热器，打开腔室清洗装置喷出清洗水，清洗水对刻蚀反应腔进行冲洗后，回流至储液箱内并与储液箱内的刻蚀药液中和，降低储液箱内的温度，防止储液箱过热爆炸。
所述湿法刻蚀装置的防爆方法用于铜金属刻蚀制程。
所述步骤3中的清洗水为去离子水。
所述步骤2中的刻蚀药液为双氧水系刻蚀药液。
所述步骤1中的控制装置为PLC。
本发明的有益效果：本发明提供的湿法刻蚀装置，利用加热器监控储液箱内的温度，当储液箱内的温度达到预设的温度上限时，通过控制装置自动关闭加热器，打开腔室清洗装置喷出清洗水，清洗水对刻蚀反应腔进行冲洗后，回流至储液箱内并与储液箱内的刻蚀药液中和，使得储液箱内的温度降低，能够有效监控并及时降低储液箱内的温度，防止储液箱内的温度过高发生爆炸，保障生产安全，提升生产稼动率，尤其适用于采用双氧水系刻蚀药液进行刻蚀的铜金属刻蚀制程，能够有效防止制程过程中因双氧水分解引起的爆炸。本发明提供的湿法刻蚀装置的防爆方法，能够有效监控并及时降低储液箱内的温度，防止储液箱内的温度过高发生爆炸，保障生产安全，提升生产稼动率。
附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为本发明的湿法刻蚀装置的结构图；
图2为本发明的湿法刻蚀装置的防爆方法的流程图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种湿法刻蚀装置，包括：刻蚀反应腔1、设于所述刻蚀反应腔1内的腔室清洗装置11、与刻蚀反应腔1连通的储液箱2、设于所述储液箱2内的加热器22、设于储液箱2底部并与所述储液箱2连通的排液管3、设于储液箱2侧上方表面的溢流口4、连通所述溢流口4和排液管3的溢流管5、以及与所述腔室清洗装置11、加热器22电性连接的控制装置23。
具体地，所述储液箱2用于容置刻蚀药液，所述加热器22用于加热刻蚀药液并监控储液箱2内的温度，所述控制装置23用于在储液箱2内的温度达到预设的温度上限时关闭加热器22，打开腔室清洗装置11，所述腔室清洗装置11用于喷出清洗水来降低储液箱2内的温度，所述刻蚀反应腔1用于进行刻蚀反应，所述溢流口4和溢流管5用于在储液箱2内的刻蚀药液过多时，将刻蚀药液及时排出，防止溢出，所述排液管3用于排除储液箱2内的药液。
具体地，所述湿法刻蚀装置适用于在湿法刻蚀过程中容易发生储液箱温度过高导致爆炸的湿法刻蚀制程，例如，采用双氧水系刻蚀药液进行刻蚀的铜金属刻蚀制程。
优选地，所述腔室清洗装置11喷出的清洗水为去离子水(Deionized Water，DIW)，去离子水可以有效清除待刻蚀装置上的胶体和悬浮物等杂质，与过热的刻蚀药液进行中和，可以有效降低储液箱2内的温度。
具体地，所述控制装置23为可编程逻辑控制器(Programmable LogicController，PLC)，通过PLC实现对所述加热器22和腔室清洗装置11的自动控制，简化操作。
具体地，所述湿法制程装置检测到储液箱2内的温度过高后，对其进行降温的工作过程为：控制装置23控制加热器22自动关闭，腔室清洗装置11自动打开，喷出去离子水，对整个刻蚀反应腔1进行冲洗，所述刻蚀反应1内残留的刻蚀药液和去离子水一起沿着管道回流到储液箱2中，去离子水和储液箱2中过热的刻蚀药液中和，使得储液箱2内的温度逐渐降低，储液箱2中的液位逐渐升高，超过溢流口4位置的药液从溢流管5中排出，待储液箱2的温度降低到室温的时候，控制装置23自动关闭腔室清洗装置11，储液箱2底部的排液管打开，将剩余的全部药液排放干净，从而有效防止储液箱2的温度过高引起爆炸。
请参阅图2，基于上述湿法刻蚀装置，本发明还提供一种湿法刻蚀装置的防爆方法，包括如下步骤：
步骤1、提供一湿法刻蚀装置，包括：刻蚀反应腔1、设于所述刻蚀反应腔1内的腔室清洗装置11、与刻蚀反应腔1连通的储液箱2、设于所述储液箱2内的加热器22、设于储液箱2底部并与所述储液箱2连通的排液管3、设于储液箱2侧上方表面的溢流口4、连通所述溢流口4和排液管3的溢流管5、以及与所述腔室清洗装置11、加热器22电性连接的控制装置23。
具体地，所述储液箱2用于容置刻蚀药液，所述刻蚀反应腔1用于进行刻蚀反应，所述溢流口4和溢流管5用于在储液箱2内的刻蚀药液过多时，将刻蚀药液及时排出，防止溢出，所述排液管3用于排除储液箱2内的药液。
优选地，所述控制装置23为PLC。
步骤2、所述加热器22对容置于储液箱2内的刻蚀药液进行加热，同时所述加热器22监控所述储液箱2内的温度，并将温度数据传输给控制装置23；
步骤3、所述控制装置23判断当前储液箱2内的温度是否达到预设的温度上限，若当前储液箱2内的温度达到预设的温度上限，则关闭加热器22，打开腔室清洗装置11喷出清洗水，清洗水对刻蚀反应腔1进行冲洗后，回流至储液箱2内并与储液箱2内的刻蚀药液中和，降低储液箱2内的温度，防止储液箱2过热爆炸。
具体地，所述湿法刻蚀装置适用于在湿法刻蚀过程中容易发生储液箱温度过高导致爆炸的湿法刻蚀制程，例如，采用双氧水系刻蚀药液进行刻蚀的铜金属刻蚀制程。
优选地，所述腔室清洗装置11喷出的清洗水为去离子水，去离子水可以有效清除待刻蚀装置上的胶体和悬浮物等杂质，与过热的刻蚀药液进行中和，可以有效降低储液箱2内的温度。
进一步地，所述步骤3的详细过程为：控制装置23控制加热器22自动关闭，腔室清洗装置11自动打开，喷出去离子水，对整个刻蚀反应腔1进行冲洗，所述刻蚀反应1内残留的刻蚀药液和去离子水一起沿着管道回流到储液箱2中，去离子水和储液箱2中过热的刻蚀药液中和，使得储液箱2内的温度逐渐降低，储液箱2中的液位逐渐升高，超过溢流口4位置的药液从溢流管5中排出，待储液箱2的温度降低到室温的时候，控制装置23自动关闭腔室清洗装置11，储液箱2底部的排液管打开，将剩余的全部药液排放干净，从而有效防止储液箱2的温度过高引起爆炸。
综上所述，本发明提供的湿法刻蚀装置，利用加热器监控储液箱内的温度，当储液箱内的温度达到预设的温度上限时，通过控制装置自动关闭加热器，打开腔室清洗装置喷出清洗水，清洗水对刻蚀反应腔进行冲洗后，回流至储液箱内并与储液箱内的刻蚀药液中和，使得储液箱内的温度降低，能够有效监控并及时降低储液箱内的温度，防止储液箱内的温度过高发生爆炸，保障生产安全，提升生产稼动率，尤其适用于采用双氧水系刻蚀药液进行刻蚀的铜金属刻蚀制程，能够有效防止制程过程中因双氧水分解引起的爆炸。本发明提供的湿法刻蚀装置的防爆方法，能够有效监控并及时降低储液箱内的温度，防止储液箱内的温度过高发生爆炸，保障生产安全，提升生产稼动率。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (8)

1.一种湿法刻蚀装置，其特征在于，包括：刻蚀反应腔(1)、设于所述刻蚀反应腔(1)内的腔室清洗装置(11)、与刻蚀反应腔(1)连通的储液箱(2)、设于所述储液箱(2)内的加热器(22)、设于储液箱(2)底部并与所述储液箱(2)连通的排液管(3)、设于储液箱(2)侧上方表面的溢流口(4)、连通所述溢流口(4)和排液管(3)的溢流管(5)、以及与所述腔室清洗装置(11)、加热器(22)电性连接的控制装置(23)；
所述储液箱(2)容置刻蚀药液，所述加热器(22)加热刻蚀药液并监控储液箱(2)内的温度，所述控制装置(23)在储液箱(2)内的温度达到预设的温度上限时关闭加热器(22)，打开腔室清洗装置(11)喷出清洗水，清洗水对刻蚀反应腔(1)进行冲洗后，回流至储液箱(2)内并与储液箱(2)内的刻蚀药液中和，降低储液箱(2)内的温度；
所述清洗水为去离子水。
2.如权利要求1所述的湿法刻蚀装置，其特征在于，所述湿法刻蚀装置用于铜金属刻蚀制程。
3.如权利要求2所述的湿法刻蚀装置，其特征在于，所述刻蚀药液为双氧水系刻蚀药液。
4.如权利要求1所述的湿法刻蚀装置，其特征在于，所述控制装置(23)为PLC。
5.一种湿法刻蚀装置的防爆方法，其特征在于，包括如下步骤：
步骤1、提供一湿法刻蚀装置，包括：刻蚀反应腔(1)、设于所述刻蚀反应腔(1)内的腔室清洗装置(11)、与刻蚀反应腔(1)连通的储液箱(2)、设于所述储液箱(2)内的加热器(22)、设于储液箱(2)底部并与所述储液箱(2)连通的排液管(3)、设于储液箱(2)侧上方表面的溢流口(4)、连通所述溢流口(4)和排液管(3)的溢流管(5)、以及与所述腔室清洗装置(11)、加热器(22)电性连接的控制装置(23)；
步骤2、所述加热器(22)对容置于储液箱(2)内的刻蚀药液进行加热，同时所述加热器(22)监控所述储液箱(2)内的温度，并将温度数据传输给控制装置(23)；
步骤3、所述控制装置(23)判断当前储液箱(2)内的温度是否达到预设的温度上限，若当前储液箱(2)内的温度达到预设的温度上限，则关闭加热器(22)，打开腔室清洗装置(11)喷出清洗水，清洗水对刻蚀反应腔(1)进行冲洗后，回流至储液箱(2)内并与储液箱(2)内的刻蚀药液中和，降低储液箱(2)内的温度，防止储液箱(2)过热爆炸；
所述步骤3中的清洗水为去离子水。
6.如权利要求5所述的湿法刻蚀装置的防爆方法，其特征在于，所述湿法刻蚀装置的防爆方法用于铜金属刻蚀制程。
7.如权利要求6所述的湿法刻蚀装置的防爆方法，其特征在于，所述步骤2中的刻蚀药液为双氧水系刻蚀药液。
8.如权利要求5所述的湿法刻蚀装置的防爆方法，其特征在于，所述步骤1中的控制装置(23)为PLC。
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