KR20080104964A - 기판세정방법 및 기판세정장치 - Google Patents
기판세정방법 및 기판세정장치 Download PDFInfo
- Publication number
- KR20080104964A KR20080104964A KR1020080046225A KR20080046225A KR20080104964A KR 20080104964 A KR20080104964 A KR 20080104964A KR 1020080046225 A KR1020080046225 A KR 1020080046225A KR 20080046225 A KR20080046225 A KR 20080046225A KR 20080104964 A KR20080104964 A KR 20080104964A
- Authority
- KR
- South Korea
- Prior art keywords
- processing
- chemical liquid
- treatment
- rinse
- liquid
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 title claims abstract description 89
- 238000004140 cleaning Methods 0.000 title claims abstract description 67
- 239000007788 liquid Substances 0.000 claims abstract description 180
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 83
- 239000000126 substance Substances 0.000 claims description 113
- 238000011282 treatment Methods 0.000 claims description 108
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 58
- 238000005259 measurement Methods 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 abstract 6
- 229910021641 deionized water Inorganic materials 0.000 abstract 6
- 239000003814 drug Substances 0.000 abstract 6
- 229940079593 drug Drugs 0.000 abstract 6
- 239000003795 chemical substances by application Substances 0.000 abstract 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 22
- 239000004065 semiconductor Substances 0.000 description 16
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 12
- 238000005406 washing Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 7
- 239000000908 ammonium hydroxide Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- -1 calcium (Ca) Chemical class 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000008155 medical solution Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/06—Hydroxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/40—Specific cleaning or washing processes
- C11D2111/44—Multi-step processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007140099A JP4917965B2 (ja) | 2007-05-28 | 2007-05-28 | 基板洗浄方法および基板洗浄装置 |
JPJP-P-2007-00140099 | 2007-05-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080104964A true KR20080104964A (ko) | 2008-12-03 |
KR100970804B1 KR100970804B1 (ko) | 2010-07-16 |
Family
ID=40086772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080046225A KR100970804B1 (ko) | 2007-05-28 | 2008-05-19 | 기판세정방법 및 기판세정장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8038798B2 (ko) |
JP (1) | JP4917965B2 (ko) |
KR (1) | KR100970804B1 (ko) |
CN (1) | CN101314159A (ko) |
TW (1) | TW200910439A (ko) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5284918B2 (ja) * | 2009-09-24 | 2013-09-11 | 大日本スクリーン製造株式会社 | 基板処理装置及び基板処理方法 |
CN102096346B (zh) * | 2009-12-15 | 2013-06-12 | 北大方正集团有限公司 | 硅片去胶方法、装置及使用显影机台进行硅片去胶的方法 |
JP5541627B2 (ja) * | 2010-09-30 | 2014-07-09 | 大日本スクリーン製造株式会社 | 処理液供給装置およびこれを備えた基板処理装置 |
CN104022014A (zh) * | 2013-03-01 | 2014-09-03 | 中芯国际集成电路制造(上海)有限公司 | 湿法清洗方法 |
JP6289241B2 (ja) * | 2013-06-20 | 2018-03-07 | 東京エレクトロン株式会社 | 液処理方法、液処理装置及び記憶媒体 |
WO2015136872A1 (ja) * | 2014-03-10 | 2015-09-17 | 株式会社Screenホールディングス | 基板処理システムおよび配管洗浄方法 |
JP6339954B2 (ja) * | 2014-06-09 | 2018-06-06 | 株式会社荏原製作所 | 洗浄薬液供給装置、洗浄薬液供給方法、及び洗浄ユニット |
KR101642411B1 (ko) | 2014-08-06 | 2016-07-25 | 박기환 | 반도체 웨이퍼 세정용 싱글타입 세정장치의 제어 및 모니터링 방법 |
TW201713751A (zh) * | 2015-10-06 | 2017-04-16 | 聯華電子股份有限公司 | 酸槽補酸系統與方法 |
US11742196B2 (en) * | 2018-05-24 | 2023-08-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Systems and methods for metallic deionization |
JP7252003B2 (ja) * | 2019-02-19 | 2023-04-04 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
CN112687574B (zh) * | 2019-10-17 | 2023-03-24 | 夏泰鑫半导体(青岛)有限公司 | 晶圆清洗状态的监测系统及监测方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0474420A (ja) * | 1990-07-17 | 1992-03-09 | Fujitsu Ltd | 洗浄装置及び洗浄方法 |
JP3364931B2 (ja) * | 1991-06-24 | 2003-01-08 | ソニー株式会社 | 洗浄方法 |
JP3377657B2 (ja) | 1994-08-08 | 2003-02-17 | 東京エレクトロン株式会社 | 洗浄処理装置および処理装置の画面処理方法 |
JP3464843B2 (ja) * | 1995-03-30 | 2003-11-10 | 大日本スクリーン製造株式会社 | 基板処理装置における基板処理方法および基板処理装置 |
TW322605B (ko) * | 1995-12-07 | 1997-12-11 | Tokyo Electron Co Ltd | |
JP3243708B2 (ja) * | 1995-12-07 | 2002-01-07 | 東京エレクトロン株式会社 | 処理方法及び処理装置 |
JP2000068241A (ja) | 1998-08-21 | 2000-03-03 | Dainippon Screen Mfg Co Ltd | 基板処理方法 |
EP1142005A1 (en) * | 1999-09-10 | 2001-10-10 | Koninklijke Philips Electronics N.V. | Arrangement and method for detecting the end of life of an aqueous bath utilized in semiconductor processing |
JP3773390B2 (ja) | 2000-03-31 | 2006-05-10 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP2005101572A (ja) * | 2003-08-28 | 2005-04-14 | Dainippon Screen Mfg Co Ltd | 基板洗浄方法及びその装置 |
JP4330959B2 (ja) * | 2003-09-05 | 2009-09-16 | 株式会社東芝 | 半導体基板の洗浄方法および洗浄装置、半導体基板、ならびに半導体装置 |
US20060043073A1 (en) | 2004-08-24 | 2006-03-02 | Dainippon Screen Mfg. Co., Ltd. | Substrate treating method and apparatus |
JP2006253552A (ja) * | 2005-03-14 | 2006-09-21 | Toshiba Corp | 半導体洗浄装置および半導体洗浄方法 |
JP4891730B2 (ja) | 2006-10-18 | 2012-03-07 | 東京エレクトロン株式会社 | 液処理装置及び液処理方法並びに液処理プログラム |
-
2007
- 2007-05-28 JP JP2007140099A patent/JP4917965B2/ja active Active
-
2008
- 2008-05-13 TW TW097117589A patent/TW200910439A/zh unknown
- 2008-05-19 KR KR1020080046225A patent/KR100970804B1/ko active IP Right Grant
- 2008-05-20 CN CNA2008101005420A patent/CN101314159A/zh active Pending
- 2008-05-21 US US12/124,555 patent/US8038798B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP4917965B2 (ja) | 2012-04-18 |
TW200910439A (en) | 2009-03-01 |
KR100970804B1 (ko) | 2010-07-16 |
JP2008294328A (ja) | 2008-12-04 |
US20080295862A1 (en) | 2008-12-04 |
TWI376742B (ko) | 2012-11-11 |
CN101314159A (zh) | 2008-12-03 |
US8038798B2 (en) | 2011-10-18 |
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