CN102703902A - Tft阵列基板铜导线的蚀刻液 - Google Patents
Tft阵列基板铜导线的蚀刻液 Download PDFInfo
- Publication number
- CN102703902A CN102703902A CN2012102131501A CN201210213150A CN102703902A CN 102703902 A CN102703902 A CN 102703902A CN 2012102131501 A CN2012102131501 A CN 2012102131501A CN 201210213150 A CN201210213150 A CN 201210213150A CN 102703902 A CN102703902 A CN 102703902A
- Authority
- CN
- China
- Prior art keywords
- etching solution
- array substrate
- copper conductor
- tft array
- substrate copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
Abstract
Description
Claims (9)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210213150.1A CN102703902B (zh) | 2012-06-26 | 2012-06-26 | Tft阵列基板铜导线的蚀刻液 |
US13/583,225 US20130341558A1 (en) | 2012-06-26 | 2012-07-06 | Etching solution for copper lead of tft array substrate |
PCT/CN2012/078260 WO2014000320A1 (zh) | 2012-06-26 | 2012-07-06 | Tft阵列基板铜导线的蚀刻液 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210213150.1A CN102703902B (zh) | 2012-06-26 | 2012-06-26 | Tft阵列基板铜导线的蚀刻液 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102703902A true CN102703902A (zh) | 2012-10-03 |
CN102703902B CN102703902B (zh) | 2014-01-01 |
Family
ID=46896944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210213150.1A Active CN102703902B (zh) | 2012-06-26 | 2012-06-26 | Tft阵列基板铜导线的蚀刻液 |
Country Status (2)
Country | Link |
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CN (1) | CN102703902B (zh) |
WO (1) | WO2014000320A1 (zh) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104480469A (zh) * | 2014-12-12 | 2015-04-01 | 江阴润玛电子材料股份有限公司 | 一种新型tft铜钼层叠膜蚀刻液组合物及蚀刻方法 |
CN104538335A (zh) * | 2014-12-18 | 2015-04-22 | 深圳市华星光电技术有限公司 | 改善铜导线制程中刻蚀药液寿命与良率的方法及铜导线刻蚀装置 |
CN104611701A (zh) * | 2013-11-01 | 2015-05-13 | 达兴材料股份有限公司 | 蚀刻液组合物及蚀刻方法 |
CN104611700A (zh) * | 2013-11-01 | 2015-05-13 | 达兴材料股份有限公司 | 蚀刻液组合物及蚀刻方法 |
CN107740101A (zh) * | 2017-09-19 | 2018-02-27 | 合肥惠科金扬科技有限公司 | 一种用于amoled阵列基板铜导线的蚀刻液 |
CN108359987A (zh) * | 2017-01-26 | 2018-08-03 | 易案爱富科技有限公司 | 蚀刻组合物 |
CN109133497A (zh) * | 2018-08-02 | 2019-01-04 | 深圳市华星光电技术有限公司 | 废液处理装置及废液处理方法 |
CN112415799A (zh) * | 2020-11-10 | 2021-02-26 | Tcl华星光电技术有限公司 | 阵列基板及其制备方法 |
WO2021189603A1 (zh) * | 2020-03-23 | 2021-09-30 | 深圳市华星光电半导体显示技术有限公司 | 蚀刻螯合剂及其制备方法与蚀刻液组合物 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1417383A (zh) * | 2000-12-20 | 2003-05-14 | Lg.菲利浦Lcd株式会社 | 腐蚀剂和具有用腐蚀剂蚀刻之铜线的阵列式基片 |
US20030107023A1 (en) * | 2001-12-06 | 2003-06-12 | Lg.Philips Lcd Co., Ltd. | Etchant for etching metal wiring layers and method for forming thin film transistor by using the same |
CN1510169A (zh) * | 2002-12-12 | 2004-07-07 | Lg.菲利浦Lcd株式会社 | 用于多层铜和钼的蚀刻溶液及使用该蚀刻溶液的蚀刻方法 |
CN101684557A (zh) * | 2008-09-26 | 2010-03-31 | 韩国泰科诺赛美材料株式会社 | 液晶显示器系统中的铜、铜/钼或铜/钼合金电极蚀刻液体 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200916564A (en) * | 2007-01-31 | 2009-04-16 | Advanced Tech Materials | Stabilization of polymer-silica dispersions for chemical mechanical polishing slurry applications |
KR101825493B1 (ko) * | 2010-04-20 | 2018-02-06 | 삼성디스플레이 주식회사 | 금속 배선용 식각액 조성물 및 이를 이용한 박막 트랜지스터 표시판의 제조방법 |
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2012
- 2012-06-26 CN CN201210213150.1A patent/CN102703902B/zh active Active
- 2012-07-06 WO PCT/CN2012/078260 patent/WO2014000320A1/zh active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1417383A (zh) * | 2000-12-20 | 2003-05-14 | Lg.菲利浦Lcd株式会社 | 腐蚀剂和具有用腐蚀剂蚀刻之铜线的阵列式基片 |
US20030107023A1 (en) * | 2001-12-06 | 2003-06-12 | Lg.Philips Lcd Co., Ltd. | Etchant for etching metal wiring layers and method for forming thin film transistor by using the same |
CN1510169A (zh) * | 2002-12-12 | 2004-07-07 | Lg.菲利浦Lcd株式会社 | 用于多层铜和钼的蚀刻溶液及使用该蚀刻溶液的蚀刻方法 |
CN101684557A (zh) * | 2008-09-26 | 2010-03-31 | 韩国泰科诺赛美材料株式会社 | 液晶显示器系统中的铜、铜/钼或铜/钼合金电极蚀刻液体 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104611701A (zh) * | 2013-11-01 | 2015-05-13 | 达兴材料股份有限公司 | 蚀刻液组合物及蚀刻方法 |
CN104611700A (zh) * | 2013-11-01 | 2015-05-13 | 达兴材料股份有限公司 | 蚀刻液组合物及蚀刻方法 |
CN104480469A (zh) * | 2014-12-12 | 2015-04-01 | 江阴润玛电子材料股份有限公司 | 一种新型tft铜钼层叠膜蚀刻液组合物及蚀刻方法 |
CN104480469B (zh) * | 2014-12-12 | 2018-02-23 | 江阴润玛电子材料股份有限公司 | 一种tft铜钼层叠膜蚀刻液组合物及蚀刻方法 |
CN104538335A (zh) * | 2014-12-18 | 2015-04-22 | 深圳市华星光电技术有限公司 | 改善铜导线制程中刻蚀药液寿命与良率的方法及铜导线刻蚀装置 |
WO2016095337A1 (zh) * | 2014-12-18 | 2016-06-23 | 深圳市华星光电技术有限公司 | 改善铜导线制程中刻蚀药液寿命与良率的方法及铜导线刻蚀装置 |
CN104538335B (zh) * | 2014-12-18 | 2017-07-28 | 深圳市华星光电技术有限公司 | 改善铜导线制程中刻蚀药液寿命与良率的方法及铜导线刻蚀装置 |
CN108359987A (zh) * | 2017-01-26 | 2018-08-03 | 易案爱富科技有限公司 | 蚀刻组合物 |
CN107740101A (zh) * | 2017-09-19 | 2018-02-27 | 合肥惠科金扬科技有限公司 | 一种用于amoled阵列基板铜导线的蚀刻液 |
CN109133497A (zh) * | 2018-08-02 | 2019-01-04 | 深圳市华星光电技术有限公司 | 废液处理装置及废液处理方法 |
WO2021189603A1 (zh) * | 2020-03-23 | 2021-09-30 | 深圳市华星光电半导体显示技术有限公司 | 蚀刻螯合剂及其制备方法与蚀刻液组合物 |
CN112415799A (zh) * | 2020-11-10 | 2021-02-26 | Tcl华星光电技术有限公司 | 阵列基板及其制备方法 |
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Publication number | Publication date |
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CN102703902B (zh) | 2014-01-01 |
WO2014000320A1 (zh) | 2014-01-03 |
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C06 | Publication | ||
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Etching liquid for TFT (thin film transistor)array substrate copper conductor Effective date of registration: 20190426 Granted publication date: 20140101 Pledgee: Bank of Beijing Limited by Share Ltd Shenzhen branch Pledgor: Shenzhen Huaxing Optoelectronic Technology Co., Ltd. Registration number: 2019440020032 |
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PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20201016 Granted publication date: 20140101 Pledgee: Bank of Beijing Limited by Share Ltd. Shenzhen branch Pledgor: Shenzhen China Star Optoelectronics Technology Co.,Ltd. Registration number: 2019440020032 |