CN110359049A - 含银薄膜蚀刻液组合物、利用其制造的显示装置用阵列基板及其制造方法 - Google Patents
含银薄膜蚀刻液组合物、利用其制造的显示装置用阵列基板及其制造方法 Download PDFInfo
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- CN110359049A CN110359049A CN201811245657.9A CN201811245657A CN110359049A CN 110359049 A CN110359049 A CN 110359049A CN 201811245657 A CN201811245657 A CN 201811245657A CN 110359049 A CN110359049 A CN 110359049A
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- conductive film
- films
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Inorganic Chemistry (AREA)
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Abstract
本发明提供含银薄膜蚀刻液组合物、利用其制造的显示装置用阵列基板及其制造方法,相对于组合物总重量,所述蚀刻液组合物包含:40.0重量%至60.0重量%的磷酸;5.0重量%至9.0重量%的硝酸;0.1重量%至4.0重量%的硝酸铁;0.1重量%至5.0重量%的有机酸盐;以及余量的水。
Description
技术领域
本发明涉及含银薄膜蚀刻液组合物、利用其制造的显示装置用阵列基板及其制造方法。
背景技术
随着正式步入信息化时代,处理并显示大量信息的显示装置领域得到急速发展,应对于此,开发了多种多样的平板显示器并受到关注。作为这样的平板显示装置的例子,可以举出液晶显示装置(Liquid Crystal Display device:LCD)、等离子体显示装置(PlasmaDisplay Panel device:PDP)、场发射显示装置(Field Emission Display device:FED)、有机发光二极管(Organic Light Emitting Diodes:OLED)等。
例如,OLED由于元件本身发光且在低电压下也能够被驱动,因此已被快速地应用于便携设备等小型显示装置市场,而且随着显示装置的大画面化的趋势,当前状况是在大型TV等中商用化。随着显示装置大画面化,配线等变长而配线电阻增大,因此要求能够降低电阻而实现显示装置的大型化和高分辨率的方法。
为了解决电阻增加所引起的信号延迟等问题,需要由使上述配线具有尽可能小电阻率的材料来形成。作为这样的努力中的一环,关注通过将与其他金属相比具有低电阻率和高亮度、高导电率的银(Ag:电阻率约1.59μΩcm)膜、银合金膜或包含银膜或银合金膜的多层膜用于滤色器的电极、配线和反射膜等中来实现平板显示装置的大型化和高分辨率及低耗电等,并且要求用于这样的材料的蚀刻液。
在利用含银薄膜的情况下,虽然在低分辨率显示装置中银的再吸附的发生没有成为问题,但是在高分辨率显示装置技术中,实际情况是银的再吸附突显问题。与此关联,以往开发了用包含磷酸、乙酸、硝酸的蚀刻液组合物(韩国授权专利第10-0579421号)等将包含银的薄膜蚀刻的方法,但是在包含乙酸的情况下,存在因乙酸的强挥发性而经时稳定性下降的问题,且发生了产生斑纹的问题等。
[现有技术文献]
[专利文献]
(专利文献1):韩国授权专利第10-0579421号
发明内容
技术问题
本发明是为了解决上述以往技术问题而提出的,其目的在于,提供一种在蚀刻包含银的金属膜时经时稳定性问题得到改善,几乎没有银残渣和再吸附而显示优异的效果,且直进性优异的含银薄膜的蚀刻液组合物。
此外,本发明的目的在于,提供使用上述蚀刻液组合物而制造的显示装置用阵列基板及其制造方法。
技术方案
本发明提供一种含银薄膜的蚀刻液组合物,相对于组合物总重量,所述蚀刻液组合物包含:40.0重量%至60.0重量%的磷酸;5.0重量%至9.0重量%的硝酸;0.1重量%至4.0重量%的硝酸铁;0.1重量%至5.0重量%的有机酸盐;以及余量的水。
此外,本发明提供一种显示装置用阵列基板的制造方法,其特征在于,包括:
步骤a)在基板上形成栅极配线;
步骤b)在包含所述栅极配线的基板上形成栅极绝缘层;
步骤c)在所述栅极绝缘层上形成氧化物半导体层;
步骤d)在所述氧化物半导体层上形成源电极和漏电极;以及
步骤e)形成与所述漏电极连接的像素电极,
其中,所述步骤e)包括在基板上形成含银薄膜且用根据权利要求1所述的含银薄膜的蚀刻液组合物进行蚀刻而形成像素电极或反射膜的步骤。
此外,本发明提供使用上述蚀刻液组合物进行蚀刻而形成的显示装置用阵列基板。
有益效果
本发明为了解决上述以往技术问题而提出的,其目的在于,提供在蚀刻包含银的金属膜时经时稳定性问题得到改善,几乎没有银残渣和再吸附而显示优异的效果,且直进性优异的含银薄膜的蚀刻液组合物。
此外,本发明提供使用上述蚀刻液组合物的显示装置用阵列基板的制造方法。
附图说明
图1为显示斑纹良好的实施例1的基板的光学显微镜图像。
图2为显示斑纹不良的比较例1的基板的光学显微镜图像。
具体实施方式
本发明涉及一种含银薄膜的蚀刻液组合物,相对于组合物总重量,所述蚀刻液组合物包含:40.0重量%至60.0重量%的磷酸;5.0重量%至9.0重量%的硝酸;0.1重量%至4.0重量%的硝酸铁;0.1重量%至5.0重量%的有机酸盐;以及余量的水,该含银薄膜的蚀刻液组合物在蚀刻包含银的金属膜时经时稳定性问题得到改善,几乎没有银残渣和再吸附而显示优异的效果,且直进性优异。
本发明中,含银薄膜可以包含银或银合金的单层膜或由上述单层膜和透明导电膜构成的多层膜,但不限于此。
本发明中,透明导电膜可以为选自由氧化铟锡(ITO)、氧化铟锌(IZO)、氧化铟锡锌(ITZO)和/或氧化铟镓锌(IGZO)等组成的组中的一者以上,但并不限于此。
本发明中,银合金可以包含:银(Ag);以及选自镍(Ni)、铜(Cu)、锌(Zn)、锰(Mn)、铬(Cr)、锡(Sn)、钯(Pd)、钕(Nd)、铌(Nb)、钼(Mo)、镁(Mg)、钨(W)、镤(Pa)、铝(Al)和钛(Ti)中的一者以上,但不限于此。
本发明中,由单层膜和透明导电膜构成的多层膜可以为透明导电膜/银、透明导电膜/银合金、透明导电膜/银/透明导电膜或透明导电膜/银合金/透明导电膜,但不限于此。上述透明导电膜/银/透明导电膜可以为a-ITO/AgX/a-ITO,但不限于此。
本发明的特征在于,透明导电膜为氧化铟锡(ITO)、氧化铟锌(IZO)、氧化铟锡锌(ITZO)和氧化铟镓锌(IGZO)。
本发明的蚀刻液中所含的磷酸(H3PO4)是用作主离解剂的成分,发挥使银和透明导电膜氧化而进行湿式蚀刻的作用。其含量相对于蚀刻液组合物总重量可以为40.0重量%至60.0重量%。在磷酸的含量低于40重量%的情况下,可能导致银的蚀刻速度降低和蚀刻轮廓的不良,Ag再吸附会增加。在超过60重量%的情况下,存在如下缺点:透明导电膜的蚀刻速度降低,银的蚀刻速度变得过快,使上下部透明导电膜产生尖端(Tip)而在后续工序中成为问题。
本发明的蚀刻液中所含的硝酸(HNO3)是用作氧化剂的成分,发挥使银和透明导电膜氧化而进行湿式蚀刻的作用。其含量相对于蚀刻液组合物总重量可以为5.0至9.0重量%。在硝酸的含量低于5.0重量%的情况下,发生银和ITO的蚀刻速度降低,因此基板内的蚀刻均匀性(Uniformity)变得不良而可能产生斑纹,在超过9.0重量%的情况下,存在如下缺点:上下部透明导电膜的蚀刻速度加快,上下部透明导电膜发生底切(under cut)而在后续工序中产生问题。
本发明的蚀刻液中的硝酸铁是用作辅助氧化剂和Ag配体的成分,在湿式蚀刻时使对于薄膜的Ag再吸附减少,而且以均匀蚀刻的方式调节蚀刻速度。其含量相对于蚀刻液组合物总重量可以为0.1至4.0重量%。在硝酸铁的含量低于0.1重量%的情况下,基板内的蚀刻均匀性可能降低,而且基板内可能局部地产生银残渣。在超过4.0重量%的情况下,蚀刻速度降低而无法实现期望的蚀刻速度。
本发明的蚀刻液中的有机酸盐为蚀刻后控制斑纹的成分,其含量相对于蚀刻液组合物总重量可以为0.1至5.0重量%。在上述有机酸盐含量低于0.1重量%的情况下,直进性变得不良,电特性下降,而且在基板内可能局部产生残渣,在超过5.0重量%的情况下,可能产生发生过蚀刻而无法实现期望的蚀刻速度的问题。
具体而言,上述有机酸盐可以为选自乙酸、丁酸、柠檬酸、甲酸、葡糖酸、乙醇酸、丙二酸、草酸、戊酸、甲磺酸、磺基苯甲酸、磺基琥珀酸、磺基邻苯二甲酸、水杨酸、磺基水杨酸、苯甲酸、乳酸、甘油酸、琥珀酸、苹果酸、酒石酸、异柠檬酸、丙烯酸、亚氨基二乙酸和乙二胺四乙酸的钾盐、钠盐和铵盐中的一者以上,优选为乙酸钾或柠檬酸铵,更优选为乙酸钾。
在本发明中,本发明中使用的水是指去离子水,使用半导体工序用去离子水,优选可以使用18MΩ/㎝以上的水。以全部组合物总重量达到100重量%的方式包含余量的水。
本发明提供一种蚀刻液组合物,其即使不含乙酸也具有优异的直进性,且改善银再吸附问题,不仅如此还显著改善因包含乙酸而发生的问题、即经时稳定性下降的问题。
本发明的蚀刻液不仅能够蚀刻银或银合金的单层膜,而且对于透明导电膜/银、透明导电膜/银合金的双层膜、由透明导电膜/银/透明导电膜构成的三层膜也能够进行一并蚀刻,能够用于2步骤蚀刻,即用其他蚀刻液蚀刻上部透明导电膜后用本蚀刻液蚀刻银(银合金)和下部透明导电膜,且能够用于3步骤蚀刻,即用其他蚀刻液蚀刻上部透明导电膜后用本蚀刻液蚀刻银(银合金),然后用其他蚀刻液蚀刻下部透明导电膜的工序。
在制造显示装置时,对于用作配线和反射膜的由银(Ag)或银合金形成的单层膜和由上述单层膜和透明导电膜构成的多层膜使用本发明的蚀刻液组合物的情况下,能够显示针对图案部的配线和反射膜的微细蚀刻均匀性且能够改善因焊垫(Pad)部数据(Data)配线的损伤而发生的Ag再吸附问题。
本发明提供一种显示装置用阵列基板的制造方法,其特征在于,包括:步骤a)在基板上形成栅极配线;步骤b)在包含所述栅极配线的基板上形成栅极绝缘层;步骤c)在所述栅极绝缘层上形成氧化物半导体层;步骤d)在所述氧化物半导体层上形成源电极和漏电极;以及步骤e)形成与所述漏电极连接的像素电极或反射膜,其中,所述步骤e)包括在基板上形成含银薄膜且用上述本发明的含银薄膜的蚀刻液组合物进行蚀刻而形成像素电极或反射膜的步骤。
此外,本发明提供利用上述蚀刻液组合物而制造的显示装置用阵列基板。
本发明中,上述制造方法和利用上述蚀刻液组合物而制造的显示装置用阵列基板可以用于有机发光二极管(OLED)和/或液晶显示装置(LCD),但不限于此。
以下,利用实施例和比较例更详细说明本发明。但下述实施例用于例示本发明,本发明不受下述实施例的限定,可以进行各种修改和变更。本发明的范围应由所附权利要求书的技术思想确定。
<实施例和比较例>制备银蚀刻液组合物
根据下述表1和表2中所示的组成和含量,制造实施例1至实施例10以及比较例1至比较例8各自的蚀刻液组合物10㎏,并以蚀刻液组合物总重量达到100重量%的方式包含余量的水。
[表1]
[表2]
<实验例>
在基板上沉积有机绝缘膜,在其上以的厚度沉积ITO/Ag/ITO三层膜,利用金刚石刀切断成500×600mm而准备样品。
使用上述实施例1至10和比较例1至8的蚀刻液组合物,如下进行性能测试。
实验例1:Ag侧蚀(Ag Side etch)评价
在喷射式蚀刻方式的实验设备(型号名:5.5ETCHER,ProWet公司)内分别放入上述实施例1至10和比较例1至8的银蚀刻液组合物,将温度设定为40℃而加热后,温度达到40±0.1℃时,实施上述样品的蚀刻工序。关于总蚀刻时间,实施85秒。如果放入基板且开始喷射而达到85秒的蚀刻时间,则取出且用去离子水清洗,然后利用热风干燥装置进行干燥,利用光致抗蚀剂剥离机(PR stripper)将光致抗蚀剂去除。清洗及干燥后,利用扫描电子显微镜(SEM;型号名:SU-8010,日立公司制造)进行蚀刻完成后的分析,并以下述基准进行评价,将结果示于下述表3和表4。
[Ag蚀刻量评价基准]
◎:非常优秀(侧蚀≤0.1μm)
○:优秀(侧蚀≤0.2μm、>0.1μm)
△:良好(侧蚀≤0.3μm、>0.2μm)
Ⅹ:不良(侧蚀>0.3μm)
实验例2:斑纹评价
在喷射式蚀刻方式的实验设备(型号名:5.5ETCHER,ProWet公司)内分别放入上述实施例1至10和比较例1至8的银蚀刻液组合物,将温度设定为40℃而加热后,温度达到40±0.1℃时,实施上述样品的蚀刻工序。关于总蚀刻时间,实施85秒。如果放入基板且开始喷射而达到85秒的蚀刻时间,则取出且用去离子水清洗,然后利用热风干燥装置进行干燥,利用光致抗蚀剂剥离机(PRstripper)将光致抗蚀剂去除。清洗及干燥后,利用扫描电子显微镜进行蚀刻完成后的分析,并以下述基准进行评价,将结果示于下述表3和4。
◎:没有发生_良好
Ⅹ:发生_不良
实验例3:Ag再吸附评价(焊垫部分析)
在喷射式蚀刻方式的实验设备(型号名:5.5ETCHER,ProWet公司)内分别放入上述实施例1至10和比较例1至8的银蚀刻液组合物,将温度设定为40℃而加热后,温度达到40±0.1℃时,实施上述样品的蚀刻工序。关于总蚀刻时间,实施85秒。如果放入基板且开始喷射而达到85秒的蚀刻时间,则取出且用去离子水清洗,然后利用热风干燥装置进行干燥,利用光致抗蚀剂剥离机(PRstripper)将光致抗蚀剂去除。清洗及干燥后,利用扫描电子显微镜(SEM;型号名:SU-8010,日立公司制造)通过整面观察对于如下现象进行分析:蚀刻完成后,主要是在数据配线等异种金属露出的部分或因弯曲现象而可能发生摩擦的特定部位吸附有经蚀刻的银(Ag),并以下述基准进行评价,将结果示于下述表3和4。
[Ag再吸附评价基准]
◎:非常优秀(50个以下)
○:优秀(80个以下)
△:良好(100个以下)
Ⅹ:不良(超过100个)
[表3]
[表4]
在满足本申请发明的构成以及含量这两者的实施例1至10的情况下,确认到侧蚀值优秀,不产生斑纹,Ag再吸附问题优秀或非常优秀而显示出改善了的效果,随经时变化的蚀刻液组合物的效果几乎没有发生变化。另一方面确认到,不满足本申请发明的构成以及含量的比较例1至8的侧蚀、斑纹、再吸附效果下降。
Claims (9)
1.一种含银薄膜的蚀刻液组合物,相对于组合物总重量,所述蚀刻液组合物包含:
40.0重量%至60.0重量%的磷酸;
5.0重量%至9.0重量%的硝酸;
0.1重量%至4.0重量%的硝酸铁;
0.1重量%至5.0重量%的有机酸盐;以及
余量的水。
2.根据权利要求1所述的含银薄膜的蚀刻液组合物,其中,所述有机酸盐为选自由乙酸、丁酸、柠檬酸、甲酸、葡糖酸、乙醇酸、丙二酸、草酸、戊酸、甲磺酸、磺基苯甲酸、磺基琥珀酸、磺基邻苯二甲酸、水杨酸、磺基水杨酸、苯甲酸、乳酸、甘油酸、琥珀酸、苹果酸、酒石酸、异柠檬酸、丙烯酸、亚氨基二乙酸和乙二胺四乙酸的钾盐、钠盐和铵盐组成的组中的一者以上。
3.根据权利要求1所述的含银薄膜的蚀刻液组合物,其特征在于,所述含银薄膜包含银或银合金的单层膜或由所述单层膜和透明导电膜构成的多层膜。
4.根据权利要求3所述的含银薄膜的蚀刻液组合物,其特征在于,所述透明导电膜为选自氧化铟锡(ITO)、氧化铟锌(IZO)、氧化铟锡锌(ITZO)和氧化铟镓锌(IGZO)中的一者以上。
5.根据权利要求3所述的含银薄膜的蚀刻液组合物,其特征在于,所述银合金包含:银(Ag);以及选自由镍(Ni)、铜(Cu)、锌(Zn)、锰(Mn)、铬(Cr)、锡(Sn)、钯(Pd)、钕(Nd)、铌(Nb)、钼(Mo)、镁(Mg)、钨(W)、镤(Pa)、铝(Al)和钛(Ti)组成的组中的一者以上。
6.根据权利要求3所述的含银薄膜的蚀刻液组合物,其特征在于,由所述单层膜和透明导电膜构成的多层膜为透明导电膜/银、透明导电膜/银合金、透明导电膜/银/透明导电膜、或透明导电膜/银合金/透明导电膜。
7.一种显示装置用阵列基板的制造方法,其特征在于,包括:
步骤a)在基板上形成栅极配线;
步骤b)在包含所述栅极配线的基板上形成栅极绝缘层;
步骤c)在所述栅极绝缘层上形成氧化物半导体层;
步骤d)在所述氧化物半导体层上形成源电极和漏电极;以及
步骤e)形成与所述漏电极连接的像素电极,
其中,所述步骤e)包括在基板上形成含银薄膜且用根据权利要求1所述的含银薄膜的蚀刻液组合物进行蚀刻而形成像素电极或反射膜的步骤。
8.根据权利要求7所述的显示装置用阵列基板的制造方法,其特征在于,所述显示装置用阵列基板用于液晶显示装置(LCD)或有机发光二极管(OLED)。
9.一种显示装置用阵列基板,其使用根据权利要求1至6中任一项所述的蚀刻液组合物蚀刻而成。
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