WO2016088731A1 - マイクロ・ナノバブルによる洗浄方法及び洗浄装置 - Google Patents
マイクロ・ナノバブルによる洗浄方法及び洗浄装置 Download PDFInfo
- Publication number
- WO2016088731A1 WO2016088731A1 PCT/JP2015/083678 JP2015083678W WO2016088731A1 WO 2016088731 A1 WO2016088731 A1 WO 2016088731A1 JP 2015083678 W JP2015083678 W JP 2015083678W WO 2016088731 A1 WO2016088731 A1 WO 2016088731A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- micro
- gas
- substrate
- nano
- cleaning
- Prior art date
Links
- 239000002101 nanobubble Substances 0.000 title claims abstract description 247
- 238000004140 cleaning Methods 0.000 title claims abstract description 155
- 238000000034 method Methods 0.000 title claims abstract description 113
- 239000000758 substrate Substances 0.000 claims abstract description 137
- 239000002245 particle Substances 0.000 claims abstract description 39
- 239000002184 metal Substances 0.000 claims abstract description 29
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 26
- 238000005507 spraying Methods 0.000 claims abstract description 10
- 239000007788 liquid Substances 0.000 claims description 143
- 239000007789 gas Substances 0.000 claims description 109
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 85
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 56
- 238000010438 heat treatment Methods 0.000 claims description 52
- 239000000243 solution Substances 0.000 claims description 47
- 238000012545 processing Methods 0.000 claims description 42
- 238000001035 drying Methods 0.000 claims description 38
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 28
- 238000002156 mixing Methods 0.000 claims description 23
- 238000005406 washing Methods 0.000 claims description 20
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 14
- 239000001569 carbon dioxide Substances 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 11
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- 230000008093 supporting effect Effects 0.000 claims description 9
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 239000007921 spray Substances 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 239000000356 contaminant Substances 0.000 abstract description 17
- 230000007613 environmental effect Effects 0.000 abstract description 6
- 230000000694 effects Effects 0.000 description 36
- 239000004065 semiconductor Substances 0.000 description 34
- 235000012431 wafers Nutrition 0.000 description 34
- 239000000523 sample Substances 0.000 description 19
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 238000007796 conventional method Methods 0.000 description 5
- 230000001976 improved effect Effects 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 5
- 238000001000 micrograph Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 230000002411 adverse Effects 0.000 description 4
- 238000007710 freezing Methods 0.000 description 4
- 230000008014 freezing Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000011086 high cleaning Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000000691 measurement method Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- -1 polyethylene Polymers 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000004299 exfoliation Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000005653 Brownian motion process Effects 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 229930182556 Polyacetal Natural products 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005537 brownian motion Methods 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 239000002537 cosmetic Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000604 cryogenic transmission electron microscopy Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- TUJKJAMUKRIRHC-UHFFFAOYSA-N hydroxyl Chemical class [OH] TUJKJAMUKRIRHC-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 229920006324 polyoxymethylene Polymers 0.000 description 1
- 229920001955 polyphenylene ether Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000013074 reference sample Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 239000013535 sea water Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000013319 spin trapping Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 239000011882 ultra-fine particle Substances 0.000 description 1
- 238000000733 zeta-potential measurement Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B13/00—Machines or plants for applying liquids or other fluent materials to surfaces of objects or other work by spraying, not covered by groups B05B1/00 - B05B11/00
- B05B13/02—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work
- B05B13/0221—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work characterised by the means for moving or conveying the objects or other work, e.g. conveyor belts
- B05B13/0228—Means for supporting work; Arrangement or mounting of spray heads; Adaptation or arrangement of means for feeding work characterised by the means for moving or conveying the objects or other work, e.g. conveyor belts the movement of the objects being rotative
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F21/00—Dissolving
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F21/00—Dissolving
- B01F21/02—Methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/20—Mixing gases with liquids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/20—Mixing gases with liquids
- B01F23/21—Mixing gases with liquids by introducing liquids into gaseous media
- B01F23/213—Mixing gases with liquids by introducing liquids into gaseous media by spraying or atomising of the liquids
- B01F23/2132—Mixing gases with liquids by introducing liquids into gaseous media by spraying or atomising of the liquids using nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
- B01F25/20—Jet mixers, i.e. mixers using high-speed fluid streams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
- B01F25/20—Jet mixers, i.e. mixers using high-speed fluid streams
- B01F25/21—Jet mixers, i.e. mixers using high-speed fluid streams with submerged injectors, e.g. nozzles, for injecting high-pressure jets into a large volume or into mixing chambers
- B01F25/212—Jet mixers, i.e. mixers using high-speed fluid streams with submerged injectors, e.g. nozzles, for injecting high-pressure jets into a large volume or into mixing chambers the injectors being movable, e.g. rotating
- B01F25/2122—Rotating during jetting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
- B01F35/90—Heating or cooling systems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B1/00—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
- B05B1/26—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with means for mechanically breaking-up or deflecting the jet after discharge, e.g. with fixed deflectors; Breaking-up the discharged liquid or other fluent material by impinging jets
- B05B1/262—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with means for mechanically breaking-up or deflecting the jet after discharge, e.g. with fixed deflectors; Breaking-up the discharged liquid or other fluent material by impinging jets with fixed deflectors
- B05B1/265—Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means with means for mechanically breaking-up or deflecting the jet after discharge, e.g. with fixed deflectors; Breaking-up the discharged liquid or other fluent material by impinging jets with fixed deflectors the liquid or other fluent material being symmetrically deflected about the axis of the nozzle
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
- B05B7/166—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed the material to be sprayed being heated in a container
- B05B7/1666—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed the material to be sprayed being heated in a container fixed to the discharge device
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/24—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas with means, e.g. a container, for supplying liquid or other fluent material to a discharge device
- B05B7/26—Apparatus in which liquids or other fluent materials from different sources are brought together before entering the discharge device
- B05B7/28—Apparatus in which liquids or other fluent materials from different sources are brought together before entering the discharge device in which one liquid or other fluent material is fed or drawn through an orifice into a stream of a carrying fluid
- B05B7/32—Apparatus in which liquids or other fluent materials from different sources are brought together before entering the discharge device in which one liquid or other fluent material is fed or drawn through an orifice into a stream of a carrying fluid the fed liquid or other fluent material being under pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B27/065—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of foam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/32—Layered products comprising a layer of synthetic resin comprising polyolefins
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/34—Layered products comprising a layer of synthetic resin comprising polyamides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form
- B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
- B32B3/263—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer having non-uniform thickness
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form
- B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
- B32B3/30—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/02—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer
- B32B5/022—Non-woven fabric
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/02—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer
- B32B5/024—Woven fabric
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/02—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by structural features of a fibrous or filamentary layer
- B32B5/028—Net structure, e.g. spaced apart filaments bonded at the crossing points
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/18—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by features of a layer of foamed material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B5/00—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
- B32B5/22—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed
- B32B5/24—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer
- B32B5/245—Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer another layer next to it being a foam layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60N—SEATS SPECIALLY ADAPTED FOR VEHICLES; VEHICLE PASSENGER ACCOMMODATION NOT OTHERWISE PROVIDED FOR
- B60N2/00—Seats specially adapted for vehicles; Arrangement or mounting of seats in vehicles
- B60N2/58—Seat coverings
- B60N2/5891—Seat coverings characterised by the manufacturing process; manufacturing seat coverings not otherwise provided for
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B60—VEHICLES IN GENERAL
- B60N—SEATS SPECIALLY ADAPTED FOR VEHICLES; VEHICLE PASSENGER ACCOMMODATION NOT OTHERWISE PROVIDED FOR
- B60N2/00—Seats specially adapted for vehicles; Arrangement or mounting of seats in vehicles
- B60N2/64—Back-rests or cushions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/428—Stripping or agents therefor using ultrasonic means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0331—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers for lift-off processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B16/00—Spray booths
- B05B16/60—Ventilation arrangements specially adapted therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
- B05B5/025—Discharge apparatus, e.g. electrostatic spray guns
- B05B5/0255—Discharge apparatus, e.g. electrostatic spray guns spraying and depositing by electrostatic forces only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
- B05B5/08—Plant for applying liquids or other fluent materials to objects
- B05B5/082—Plant for applying liquids or other fluent materials to objects characterised by means for supporting, holding or conveying the objects
- B05B5/084—Plant for applying liquids or other fluent materials to objects characterised by means for supporting, holding or conveying the objects the objects lying on, or being supported above conveying means, e.g. conveyor belts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
- B05B7/166—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed the material to be sprayed being heated in a container
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/16—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed
- B05B7/1693—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas incorporating means for heating or cooling the material to be sprayed with means for heating the material to be sprayed or an atomizing fluid in a supply hose or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2262/00—Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
- B32B2262/02—Synthetic macromolecular fibres
- B32B2262/0253—Polyolefin fibres
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2262/00—Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
- B32B2262/02—Synthetic macromolecular fibres
- B32B2262/0261—Polyamide fibres
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2262/00—Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
- B32B2262/02—Synthetic macromolecular fibres
- B32B2262/0276—Polyester fibres
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2262/00—Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
- B32B2262/14—Mixture of at least two fibres made of different materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2266/00—Composition of foam
- B32B2266/02—Organic
- B32B2266/0214—Materials belonging to B32B27/00
- B32B2266/0278—Polyurethane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/54—Yield strength; Tensile strength
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/50—Properties of the layers or laminate having particular mechanical properties
- B32B2307/56—Damping, energy absorption
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/72—Density
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/70—Other properties
- B32B2307/72—Density
- B32B2307/722—Non-uniform density
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2605/00—Vehicles
- B32B2605/003—Interior finishings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2605/00—Vehicles
- B32B2605/08—Cars
Definitions
- contaminants such as a resist film or metal or metal compound adhering to a substrate such as a glass substrate or a semiconductor wafer are peeled off or removed by a processing solution containing micro-nano bubbles of a gas having an average particle diameter of 100 nm or less.
- the present invention relates to a cleaning method and apparatus using micro / nano bubbles to be removed.
- the micro / nano bubble is (a) small in bubble system, (b) slow in rising speed, (c) reducing frictional resistance, (d)) bubble High internal pressure, (e) large gas-liquid interface, (f) large amount of dissolved gas, (g) accompanied by dissolution and contraction, and (h) negatively charged surface of bubble Since it has various characteristics such as being, it is expected that it will be applied to a wide range of fields such as food, cosmetics, medicines, semiconductor cleaning, plant cultivation and the like utilizing these characteristics.
- micro and nano bubbles have a very small buoyancy compared to the viscous force as the particle size becomes smaller, they can stay in the liquid as superfine bubbles for a long time without floating on the upper surface, and the sphere diameter of the bubbles is very large. It is known that a liquid containing nanobubbles can not be visually confirmed and becomes colorless and transparent.
- Non-Patent Document 1 In order to generate micro-nano bubbles, there are roughly divided into a method of entraining a gas by fluidizing the liquid and a method of blowing the gas in a stationary state. Specifically, as described in Non-Patent Document 1, various micro / nano bubble generation methods are proposed by the swirling liquid flow type, static mixer type, Bencher type, pressure dissolution type, pore type, etc. It is done.
- the pressure of the second stripping solution L2 by the high-pressure pump is used to crush the nanobubbles contained in the first stripping solution L1 as a second stripping process. Is a method of peeling the resist film.
- the peeling method of the resist film described in Patent Document 1 needs to go through two steps of a first peeling step and a second peeling step, and in some cases, it comprises a rinsing step for removing the resist film. In some cases, the peeling process is complicated.
- the patent document 1 does not specifically describe the bubble generation method and bubble diameter and density of nanobubbles contained in the peeling solution L1 used in the first peeling step, and only the first peeling step is described. It is considered difficult to obtain a sufficient peeling effect even if
- Patent Document 2 Although the pure water containing the ozone micro nano bubble described in patent document 2 and 3 is used as a lift-off method or an etching method, it is thought that it can be applied also to the use of a cleaning method.
- Patent Document 2 only describes water mixed with microbubbles as a peeling solution, and there is no specific description or suggestion about the use of nanobubbles.
- the diameter of the micro-nano bubbles to be used is 0.01 to 50 ⁇ m, and the density thereof is 1000 or more and 100000 or less per 1 ml.
- the temperature of the micro-nano bubbles is also 15 ° C. or more and 50 ° C. or less.
- microbubbles having a bubble diameter of 1 ⁇ m or more contained in the stripping solution are sufficient for stripping of resist residue adhesion on the substrate or removal of contamination by metal or metal compound. It turned out that it shows no effect. Furthermore, it is found that the effect of exfoliation or removal is greatly influenced by the density of bubbles contained in the treatment liquid, and if the density is low, sufficient effect of exfoliation or removal can be obtained even when using nanobubbles. It was not.
- Patent Document 4 described above, the properties and characteristics of bubbles necessary to obtain a great effect on the removal of resist residue adhesion on a substrate or the removal of contaminants by a metal or a metal compound, and the use conditions of the treatment liquid was not sufficiently considered. Therefore, a cleaning method that can easily and efficiently realize removal of a resist film or removal of a contaminant by a metal or a metal compound while using a stripping solution with the least possible impact on the environment is strongly desired. It has been demanded.
- the present invention has been made in view of the above-described conventional problems, and includes the average particle diameter of the micro / nano bubbles contained in the stripping solution such as pure water, and further preferably the density of the micro / nano bubbles.
- the stripping solution such as pure water
- the density of the micro / nano bubbles By defining and optimizing the temperature of the stripping solution, the load on the environment can be reduced while reducing the load on the environment by a simple method of spraying the processing solution containing the micro / nano bubbles to the substrate to be processed. It is an object of the present invention to provide a micro / nano bubble cleaning method and cleaning apparatus capable of performing peeling of resist residue adhesion or removal of contamination by metal or metal compound more efficiently and reliably than the conventional method.
- the average particle diameter of the micro / nano bubbles contained in the stripping solution such as pure water is reduced to the nano level, and preferably, the density of the micro / nano bubbles is preferably increased. It has been found that the above problems can be solved by setting the temperature to a high temperature, particularly a temperature as close as possible to 100 ° C., which is the boiling point of pure water, to reach the present invention.
- the constitution of the present invention is as follows.
- a substrate to be treated with a resist film deposited on the substrate or a substrate to be treated with the surface contaminated with a metal or a metal compound is measured by an ice embedding method using a cryotransmission electron microscope Peeling of the resist film or the metal or metal compound by spraying a treatment liquid containing micro-nano bubbles of gas having an average particle diameter of 100 nm or less and kept at a temperature of 30 to 90 ° C. to provide a cleaning method by micro-nanobubbles and performs removal.
- the present invention is characterized in that the micro-nano bubbles of the gas have an average particle size of 30 nm or less when measured by a cryo-transmission electron microscope by an ice embedding method. Provides a cleaning method by micro and nano bubbles.
- the present invention is characterized in that the micro / nano bubbles of the gas contained in the treatment liquid have a density of 10 8 or more per 1 ml as measured by a cryotransmission electron microscope by an ice embedding method. said to provide a cleaning method by the micro-nano bubbles according to [1] or [2].
- the treatment liquid containing the gas micro / nano bubbles is a solution having a dissolved gas, from the outside of a cylinder having two or more through small holes in the circumferential direction, the pressure above atmospheric pressure through the small through holes.
- the dissolved liquid jetted from the respective openings of the two or more small through holes disposed opposite to each other on the same plane parallel to the radial cross section of the cylinder is made water hammer to the center of the cylinder
- the processing method according to any one of the above [1] to [3], which is a processing liquid containing gas micro / nano bubbles generated by causing collisions to concentrate. provide.
- the present invention is any of the above-mentioned [1] to [4], wherein the gas is ozone or oxygen, and the treatment liquid is pure water containing micro-nano bubbles of ozone or oxygen. Provided is a method for cleaning with the micro / nano bubbles described above.
- the present invention is any of the above-mentioned [1] to [5], wherein the gas is a gas containing at least one of carbon dioxide and hydrogen peroxide in addition to ozone or oxygen. Provided is a method of cleaning with the described micro / nano bubbles.
- the present invention includes the step of drying water droplets and moisture on the untreated substrate before spraying the treatment liquid, according to any one of the above [1] to [6].
- the present invention is characterized in that the treatment liquid containing the micro-nano bubbles of the gas is ejected while applying ultrasonic vibration to the substrate to be treated which is an object to be cleaned. ] provides a cleaning method by the micro-nano bubbles according to any one of. [9] The present invention is characterized in that a voltage is applied between the non-treated substrate and an electrode disposed in the vicinity of a nozzle header for jetting the treatment liquid.
- the present invention provides a method of cleaning with micro / nano bubbles as described in [10]
- the present invention is the method for cleaning with micro / nano bubbles according to any one of the above [1] to [9], wherein the temperature of the treatment liquid is more than 50 ° C. and 85 ° C. or less.
- the present invention is to mix means for sucking gas and liquid, means for simultaneously pressurizing and transporting the gas and liquid, and mixing the liquid containing the transported gas with a new gas. And a hollow cylinder, and two or more penetrations in the circumferential direction of the cylinder to generate micro / nano bubbles by using a gas-liquid mixing tank for enriching the dissolved gas by using the dissolved liquid heated by the heating device.
- the two or more through small holes disposed so as to face each other in the same plane parallel to the radial cross section of the cylinder, and the micro / nano bubble discharge port at at least one end of the cylinder.
- the through small hole is a spray nozzle disposed so that all extension lines passing through the center of the cross section of the through small hole intersect at the center of the cylinder, and a treatment liquid containing the micro / nano bubbles of the gas.
- a micro / nano bubble generator having a nozzle header connected to the spray nozzle to spray a treated substrate having a resist film on its surface or a sprayed substrate on which the surface is contaminated with a metal compound;
- a holder provided opposite to the nozzle header for supporting a substrate to be processed, and a heating means for heating the processing solution containing the micro-nano bubbles of the gas to 30 to 90 ° C.
- the heating device is a heating device provided for heating the dissolved liquid in the state of the gas-liquid mixture immediately after being sent out from the gas-liquid mixing tank.
- the cleaning apparatus by the micro nano bubble as described in 11] is provided.
- the present invention is characterized in that the heating device is provided as a heater at at least one of the bottom and the side of the gas-liquid mixing tank as the heater according to the above [12].
- a cleaning device according to [14] The present invention provides that the micro / nano bubble cleaning apparatus according to any one of the above [11] to [13] further has a drying means for drying water droplets and moisture on the non-treated substrate.
- the present invention provides a micro / nano bubble cleaning apparatus characterized by the features.
- the present invention is characterized in that the holder is connected to an ultrasonic wave generator capable of applying ultrasonic vibration to the substrate to be treated. Provided is a micro / nano bubble cleaning apparatus as described.
- the present invention is characterized by comprising voltage application means for applying a voltage between the holder for supporting the non-treated substrate and the electrode disposed near the nozzle header for jetting the treatment liquid.
- the heating device further comprises a heating device or a hot air generator for heating at least one of the nozzle header and the holder. 16] to provide a cleaning apparatus by the micro-nano bubbles according to any one of.
- the present invention is characterized in that the heating device further includes an air conditioner for surrounding the nozzle header and the holder as one room, and controlling the inside of the room to a temperature of 30 to 90 ° C.
- the apparatus for cleaning with micro / nano bubbles according to any one of the above [11] to [17] is provided.
- the present invention provides the micro-nano bubble cleaning apparatus according to any one of the above [11] to [18], wherein the heating temperature is 50 to 85 ° C.
- the cleaning method according to the present invention performs stripping of resist residue adhesion on a substrate or removal of metal or metal compound contamination more efficiently and reliably than the conventional method while reducing the load on the environment. Can. Furthermore, the cleaning effect can be further improved by applying ultrasonic vibration or applying a voltage when drying the substrate to be treated or spraying the treatment liquid containing the gas micro / nano bubbles.
- the cleaning apparatus according to the present invention can be achieved by simply combining a conventional micro / nano bubble generator with an apparatus for heating the gas micro / nano bubbles, a nozzle header having a jet nozzle, and a holder for supporting the substrate to be treated. It is possible to construct a cleaning device having a simple and compact configuration. Further, by adding a drying means, an ultrasonic wave generation device or a voltage application means to these apparatus configurations, the cleaning time can be shortened and the efficiency of the cleaning can be improved.
- FIG. 2 is a front view and a perspective view showing a micro / nano bubble generator included in the cleaning apparatus shown in FIG. 1;
- FIG. 4 is a view showing one shape of the liquid collision nozzle 16 shown in FIG.
- cleaning apparatus by micro nano bubbles of this invention it is a figure which shows the modification of a heating means.
- FIG. 7 is a view showing another modified example of the heating means in the micro / nano bubble cleaning apparatus of the present invention.
- FIG. 6 is a view showing an example of an apparatus provided with a voltage application means of a substrate to be processed in the cleaning apparatus using micro / nano bubbles of the present invention. It is a figure which shows the particle size distribution of the nano bubble of the photograph of the electron microscope image of those amorphous ice about the air nano bubble water of Example 1, and the water which does not contain a nano bubble. It is a figure which shows the photograph of the electron microscope image of the amorphous ice about the ozone nano bubble water of Example 2, and the particle size distribution of a nano bubble.
- the generation amount of gas micro / nano bubbles depends on the dissolved amount of the gas contained in the treatment liquid for cleaning, and when the temperature of the treatment liquid becomes high, the solubility constant of the gas in the liquid tends to be small, so it tends to be small. It is in. Therefore, when used at high temperature, gas micro / nano bubbles are considered to cause a decrease in the cleaning ability, and have not been implemented until now.
- the temperature of the micro / nano bubble is 15 ° C. or more and 50 ° C. or less, the solution containing the gas micro / nano bubble is generally used at a lower temperature. there were.
- Patent Document 1 describes that, as the first peeling step, heating the first peeling solution L1 mixed with nanobubbles at a low temperature of about 40 to 60 ° C. It is considerable that it is understood to be heated in order to maintain high permeability to the resist film in the state of nanobubbles, and a treatment liquid containing gaseous nanobubbles is directly jetted to the substrate to be treated, It is not suitable for the processing method which performs resist stripping.
- the particle size of the gas micro / nano bubbles Also, by peeling directly from the residual film on the resist film or contaminating the metal or metal compound by direct spraying the processing solution containing the gas micro / nano bubbles at a high temperature to the substrate to be treated. It has been found that the removal of material can be performed more efficiently and reliably in a shorter time than in the conventional method.
- the size of the micro / nano bubbles contained in the treatment liquid used in the present invention can be defined by the average particle diameter.
- the size of the micro / nano bubble is also affected by the particle size distribution (standard deviation of particle size), but the effect is small, and the micro / nano bubble contained in the treatment liquid has an average particle size on the order of nano level, It is necessary to have an average particle size as small as possible.
- the gas micro / nano bubbles have an average particle diameter of 100 nm or less, preferably 30 nm or less, as measured by a cryotransmission electron microscope by ice embedding method.
- the average particle diameter of the micro / nano bubbles is 100 nm or less and the temperature of the stripping solution is jetted in a heated state at high temperature, stripping of residual deposits on the resist film and removal of contaminants consisting of metal or metal compound, It can be done reliably at a high rate in a short time. Furthermore, if it is 30 nm or less, a remarkable big effect can be acquired.
- Various methods are conventionally known as methods of measuring the particle size of micro / nano bubbles.
- a light scattering method using Mie scattered light, a laser diffraction / scattering method, and Brownian motion of bubble particles in liquid are observed.
- a nanoparticle tracking analysis method, a pore electrical resistance method (Cole-counter method), a dynamic light scattering method, a resonance type mass measurement method using a beam of MEMS (Micro Electro-Mechanical Systems), and the like have been proposed.
- a method of determining the particle diameter of nanobubbles by zeta potential measurement and a method of confirming the presence of nanobubbles by electron spon resonance (ESR) using a spin trapping agent have been proposed.
- the present invention proposes a method of measuring with a cryo-transmission electron microscope by ice embedding method as micro / nano bubble measuring method other than the above (see Japanese Patent Application No. 2014-230407).
- This method is contained in a liquid by making the liquid into an amorphous solid state and observing the ultrafine bubbles contained in the liquid in the amorphous solid state using a transmission electron microscope.
- the hyperfine bubbles and their distribution can be directly observed and analyzed as an image. Therefore, ultrafine bubbles having a particle size of less than 10 ⁇ m can be measured with high accuracy.
- the average particle diameter of the gas micro-nano bubbles specified in the present invention is determined by measurement using this method.
- the method of measuring with a cryo-transmission electron microscope by ice embedding method uses a liquid held on a micro grid or a micro mesh as a sample and observes it by a transmission electron microscope with an energy of 10 to 300 kiloelectron volts (keV).
- the measurement is performed by setting the number of electron beams used sometimes to 1 to 10 5 electrons / ⁇ 2 .
- the temperature of the treatment liquid used in the present invention is the washing effect of peeling or removal, handling of the sample during washing process, temperature control, ability and durability of washing apparatus, energy saving, environmental load, and safety point of view Therefore, it is necessary to optimize at room temperature or more and less than 100 ° C.
- the temperature of the treatment liquid needs to be set in the range of 30 to 90 ° C., which is lower than the boiling point of water, and preferably in the range of 50 to 85 ° C.
- the temperature of the treatment system is less than 30 ° C., the treatment time tends to be long even when using a treatment liquid containing micro-nano bubbles of a gas having an average particle diameter of 100 nm or less.
- the effects of the present invention can not be sufficiently obtained.
- peeling off of residual deposits on the resist film and removal of contaminants consisting of metal or metal compound can be performed in a short time and efficiently, but if it exceeds 90 ° C., the temperature Management becomes difficult.
- the temperature of the processing solution is set in the range of 50 to 85 ° C., a high cleaning effect can be stably obtained.
- a high cleaning effect can be achieved by specifying not only the average particle diameter of the micro / nano bubbles but also the number contained in 1 ml of the treatment liquid, that is, the density of the micro / nano bubbles to a high value.
- the density of the micro / nano bubbles contained in the treatment liquid used in the present invention needs to be 10 8 or more per 1 ml of the treatment liquid, as measured by a cryotransmission electron microscope by ice embedding method. preferably 10 12 / ml or more, more preferably 10 to 16 / ml or more.
- the micro / nano bubbles used in the present invention have an extremely small average particle diameter, and if the density is less than 10 8 , the concentration of the gas contained in the bubbles becomes low, so residue deposits on the resist film And removal of contaminants consisting of metals or metal compounds.
- the higher the ozone concentration the greater the cleaning effect can be obtained, but if the density of the micro / nano bubbles is less than 10 8 , the ozone concentration contained in the treatment liquid is small. And the cleaning effect is limited.
- the gas is ozone or oxygen
- the treatment liquid is pure water containing ozone or oxygen micro / nano bubbles.
- the gas micro / nano bubbles used in the present invention are preferably such that the gas is at least ozone or oxygen, and further contains at least one of carbon dioxide and hydrogen peroxide.
- a treatment liquid containing ozone or oxygen and carbon dioxide as the gas may induce ozone or oxygen to be cleaned due to adsorption of carbon dioxide on deposits or contaminants on the substrate to be treated, and carbon dioxide
- the acidifying action of can provide more efficient cleaning.
- hydroxyl radicals OH.
- the cleaning method of the present invention can enhance the cleaning effect by jetting the processing solution having gas micro / nano bubbles, but can increase the cleaning speed by combining the following three methods: The time for cleaning can be shortened and the cleaning efficiency can be greatly improved.
- the first method it is preferable to adopt a step of drying water droplets and moisture on the untreated substrate before spraying the treatment liquid having the gas micro / nano bubbles. If water droplets and moisture remain on the non-treated substrate, the remaining water lowers the density of the gas micro-nano bubbles even if the treatment liquid having the gas micro-nano bubbles is jetted. It may cause a decrease in the cleaning effect.
- the micro-nano bubble has a zeta potential on the particle surface, periphery OH - it is known that is surrounded by a negative charge. Although the details are unknown, it is believed that this OH - is a component that promotes the decomposition and removal of the deposit or contaminant on the substrate to be treated through various reactions.
- the cleaning effect can be improved by adopting the step of drying the water droplets and moisture on the non-treated substrate and eliminating as much as possible the factors that inhibit the effects of the gas micro / nano bubbles.
- the above-mentioned drying step can be performed using, for example, a drying means such as a spin drier, an isopropanol (IPA) vapor drying device, or a spin etcher used in a general semiconductor wafer cleaning step.
- a spin drier is a device for draining a substrate to be cleaned cleanly to dry water droplets and moisture by centrifugal force due to rotation and the flow of clean air drawn through a filter such as a ULPA filter.
- a method of removing water droplets and moisture while using a centrifugal force by rotating a substrate to be processed installed in a holder at high speed in advance before injecting micro and nano bubbles of gas It can be adopted.
- a method of removing water droplets and moisture by blowing dry air or high temperature air (in place of air, nitrogen gas which is an inert gas may be used) to the substrate during high speed rotation. May be adopted.
- a highly volatile liquid such as alcohol or water containing the volatile liquid may be sprayed onto the substrate to be processed.
- ultrasonic vibration may be applied to the substrate to be cleaned, peeling of residue deposits on the resist film from the substrate, or metal or metal compound. Can have a great effect on the removal of contaminants.
- ultrasonic vibration helps uniform collapse of micro-nano bubbles which are hard to break with the fine particle size contained in the treatment solution, and gases present in micro-nano bubbles, for example, It is thought that it has a function to promote the release of ozone.
- the micro / nano bubbles have an ultrafine particle diameter, so It has stayed.
- the release of the gas in the micro / nano bubbles is uniformly applied to the minute space or the minute space by applying ultrasonic vibration. It can be realized to a great extent, and we believe it will greatly contribute to the cleaning effect.
- the vibration frequency when applying the ultrasonic vibration is 10 kHz to 3 MHz, the effects of the present invention can be sufficiently achieved.
- the vibration frequency is high, chipping, cracking or damage of the substrate to be treated may be observed, which may adversely affect the number of vibration weeks is more preferably 10 kHz to 1 MHz.
- a voltage is applied between the non-treated substrate and the electrode disposed near the nozzle header for jetting the treatment liquid, whereby the resist from the non-treated substrate is removed. It has been found that a great effect can be obtained on the removal of residual deposits on the film or on the removal of contaminants consisting of metals or metal compounds.
- an electrode is disposed near a nozzle header for injecting the processing solution, and a continuous DC voltage or pulse voltage is applied between the electrode and the untreated substrate by a DC power supply or a pulse power supply.
- the micro / nano bubbles are jetted onto the substrate to be treated, and they are made based on the new finding that they play a synergistic role in improving the cleaning effect.
- OH in the micro-nano bubble surface included in the processing liquid - for ions are present, a phenomenon similar to electrolysis by applying a voltage, there is a possibility of promoting the disintegration of micro-nano bubbles having unbreakable and fine particle size. It is also considered that this promotes the release of the gas present in the micro / nano bubbles, such as ozone and carbon dioxide, but the details are unknown.
- the substrate to be treated when the temperature of the processing liquid is 30 to 90 ° C., preferably 50 to 85 ° C., and sprayed onto the substrate to be treated which is the object to be cleaned, the substrate to be treated is rotated uniformly. Can be performed.
- FIG. 1 is a view showing an example of the cleaning apparatus using micro / nano bubbles of the present invention
- FIG. 1 comprises a bellows pump 2, a gas-liquid mixing tank 3, a heating device 4 and micro / nano bubble means having micro / nano bubble generation nozzles (not shown) and contains gas micro / nano bubbles.
- It comprises a nozzle header 5 having an injection nozzle (not shown) for injecting liquid.
- the processing liquid heated by the heating device 4 is jetted from the nozzle header 5 toward the target substrate 7 supported by the holder 6 to generate micro / nano bubbles and perform cleaning.
- the holder 6 for supporting the processing target substrate 7 doubles as a rotation table having a rotation mechanism. Further, the holder 6 is connected to the ultrasonic wave transmitting device 8 and has a mechanism capable of applying an ultrasonic wave to the substrate 7 to be processed as required.
- FIG. 2 is a bellows cylinder pump
- 9 is a pump controller
- 3 is a gas-liquid mixing tank
- 10 is a pressure sensor
- 11 is a micro / nano valve generating nozzle attachment
- 12 is a liquid suction pipe
- 13 is a gas suction port
- 14 is a gas suction control valve.
- the fluid contact part 2 is made of a fluorocarbon resin.
- the amount of gas is adjusted by using a fluid suction pipe 12 and a gas suction control valve 14 by a bellows cylinder pump 2, and the liquid and gas are mixed in the inside of the pump Stir, dissolve and compress the gas inside the bellows at the inside of the bellows.
- the bellows cylinder pump 2 may be metal free, and plastics other than fluoroplastics, for example, general purpose plastics such as polyethylene, polypropylene and polyethylene terephthalate, engineering plastics such as polyacetal, polyamide, polycarbonate and modified polyphenylene ether, At least one kind of super engineering such as polyether sulfone, polyphenylene sulfide, polyether ether ketone and liquid crystal polymer may be used.
- a highly reliable and clean micro-nano bubble generating device can be obtained by using not only the pump but also the above-described various types of plastics, including fluoroplastics, in the liquid installation part.
- plastics other than fluoroplastics for example, general purpose plastics such as polyethylene, polypropylene and polyethylene terephthalate, engineering plastics such as polyacetal, polyamide, polycarbonate and modified polyphenylene ether, At least one kind of super engineering such as polyether sulfone, polyphenylene sulfide
- the pump 2 mainly uses a compressed air driven bellows cylinder pump, but may be an electric pump.
- the gas and liquid of the gas-liquid mixing tank 3 receive the pressure from the pump 2 and the gas is easily dissolved. That is, the pressure at which the gas and liquid are pumped from the pump 2 is checked by a pressure sensor 10. By this method, preparation is made to increase the amount of dissolved gas and increase the generation amount of micro / nano bubbles.
- the micro-nano valve generation system of the present invention but depending on the application, the reciprocating motion such as piston pump, plunger pump or diaphragm conventionally known as liquid feed pump A pump, a gear pump, an eccentric pump or a screw pump, a cascade pump, a rotary pump such as a vane pump, or the like can be applied.
- the reciprocating motion such as piston pump, plunger pump or diaphragm conventionally known as liquid feed pump A pump, a gear pump, an eccentric pump or a screw pump, a cascade pump, a rotary pump such as a vane pump, or the like can be applied.
- the liquid that is pumped and enters the gas-liquid mixing tank 3 is mixed with the gas, and the gas is dissolved in the liquid and then sent to the micro / nano valve generating nozzle attachment unit 11.
- the micro / nano valve generating nozzle attachment portion 11 is a portion for connecting the dissolved gas to a nozzle for producing a large amount of micro / nano valves having a diameter of 100 ⁇ m or less, preferably 30 ⁇ m or less.
- the pressure sensor 10 monitors the variation in liquid pressure between the nozzle 11 and the gas-liquid mixing tank 2 to monitor the dissolved state of the gas-liquid. In this way, a stable pressure condition required for a stable micro / nano valve generator nozzle is realized.
- the steps performed using the micro-nano valve generator used in the present invention shown in (a) and (b) of FIG. 2 are as follows. What is performed using the liquid suction pipe 12, the gas suction port 13 and the gas suction adjusting bubble 14 is a gas / liquid suction step. The pressure is adjusted by the pressure sensor 10. Next, the step of pressurizing the liquid containing gas using the bellows cylinder pump 2 is the gas / liquid pressurization step. Subsequently, a process performed using the pump controller 9 and the gas-liquid mixing tank 3 to mix the pressurized liquid containing the gas with a new gas is a dissolved gas enrichment process.
- the generation nozzle of the present invention to be described later is connected to the micro / nano valve generation nozzle attachment portion 11, and then micro / nano bubbles are generated.
- This process is called the dissolved gas refining process, but the micro / nano bubbles are injected from the outside of a cylinder having two or more small through holes through the small through holes at a pressure higher than atmospheric pressure and collided at one point inside the above cylinder Can be generated by
- FIG. 3 shows an example of a nozzle shape for generating gas micro / nano bubbles in the cleaning apparatus of FIG. 1 and an example of a nozzle header for ejecting a processing solution.
- (a) and (b) are a sectional view and a top view of the nozzle header 5, respectively.
- (A) of FIG. 3 shows a DD cross section of (b).
- the nozzle header 5 is composed of a jet nozzle 15 for jetting the treatment liquid, a micro / nano bubble discharge nozzle 16 and a platform 17, and the liquid collision nozzle One or two or more of sixteen are mounted and arranged on a table of seventeen.
- the liquid collision nozzle 16 is an example of a nozzle shape that generates gas micro / nano bubbles.
- the treatment liquid (Q) jetted from the liquid collision nozzle 16 is jetted from the jet port 15 a of the jet nozzle 15 toward the substrate 7 to be cleaned.
- the temperature of the treatment liquid is adjusted to 30 to 90 ° C., preferably 50 to 85 ° C.
- the nozzle header 5 It is preferable to adjust this temperature with the treatment liquid passing through the portion of the nozzle header 5. This is because the correlation between the cleaning ability and the temperature of the processing liquid passing through the portion of the nozzle header 5 is good. Therefore, it is preferable to provide the nozzle header 5 with a temperature sensor for measuring the temperature of the processing liquid.
- FIG. 4 is an enlarged view of a portion where the liquid collision nozzle 16 of the nozzle header 5 shown in (a) of FIG. 3 is disposed.
- the small holes 16a are open towards the center of the sixteen. Through this small hole 16a, the liquid entered under high pressure is made to collide at the central portion of the liquid collision nozzle 16 to generate micro / nano bubbles, which are jetted in the direction indicated by the arrow Q.
- the liquid velocity V was controlled, the amount of micro-nano bubbles generated was large and the bubble life was extended.
- the velocity V when the velocity exceeds 25 m / sec, it becomes a stable micro / nano bubble generation nozzle.
- FIG. 5 is a view showing a modification of the heating means in the micro / nano bubble cleaning apparatus of the present invention.
- the heating device 4 shown in FIG. 1 is not disposed downstream of the gas-liquid mixing tank 3, and the heater 19 is installed at the bottom of the gas-liquid mixing tank 3 as heating means.
- the configuration is different from the cleaning device 1 shown in FIG. 1 in that the heating means is disposed on the downstream side of the gas-liquid mixing tank 3.
- the position where the heater 19 is provided is not limited to the bottom of the gas-liquid mixing tank 3, and may be provided on the side of the gas-liquid mixing tank 3. It can also be provided on both the bottom and the side of the gas-liquid mixing tank 3.
- FIG. 6 is a view showing another modified example of the heating means in the micro / nano bubble cleaning apparatus of the present invention.
- the pipe connecting the gas-liquid mixing tank 3 and the nozzle header 5 is heated by the ribbon heater 21, and the nozzle header 5 is heated by the hot air heater 22. Even if this method is adopted, the temperature of the treatment liquid can be set to a predetermined temperature range.
- the apparatus shown in FIG. 6 has both the ribbon heater 21 and the hot air heater 22, but either system may be installed.
- FIG. 7 is a view showing still another modified example of the heating means in the micro / nano bubble cleaning apparatus of the present invention.
- a space including the nozzle header 5 and the holder 6 is further enclosed as one room 24 in the apparatus shown in FIG.
- the air conditioner 25 of The cleaning apparatus shown in FIG. 7 has an advantage that it is easy to adjust the processing solution to a predetermined temperature and control of the temperature can be made uniform.
- FIG. 8 is a view showing an example of the apparatus for cleaning with a micro / nano bubble according to the present invention, which is provided with a drying means of a substrate to be processed.
- the cleaning apparatus 26 shown in FIG. 8 includes, in addition to the cleaning apparatus shown in FIG. 1, a drying means 27 for drying water droplets and moisture remaining on a target substrate such as a semiconductor wafer.
- a drying means 27 for drying water droplets and moisture remaining on a target substrate such as a semiconductor wafer.
- a spin drier, isopropanol (IPA) vapor drier, a spin etcher or the like can be used, but an example of a spin drier is shown in FIG.
- IPA isopropanol
- the substrate 7 to be processed such as a wafer is inserted into the drying means 27, and drying is performed by a centrifugal force + intake air drying method for taking in environmental air.
- the substrate to be treated 7 after drying is taken out and supported by the holder 6 having a rotation mechanism, and processing having gas micro / nano bubbles from a nozzle header 5 having a jet nozzle not shown.
- the liquid is jetted toward the rotating substrate 7 as indicated by ⁇ in the figure.
- FIG. 9 is a view showing an example of an apparatus provided with voltage application means 31 for a substrate to be processed in the cleaning apparatus using micro / nano bubbles of the present invention.
- the voltage application means 31 basically connects the electrode 29 disposed near the nozzle header 5 for jetting the treatment liquid, the power source 30, and the holder 6 for supporting the electrode 29 and the substrate 7 to the power source 30. It is an apparatus and parts which are comprised of electrical wiring and which are added to the cleaning apparatus shown in FIG. In the cleaning device 28 shown in FIG. 9, the electrode 29 and the holder 6 are electrically connected to the (+) side and the ( ⁇ ) side of the power source 30, respectively.
- the processing solution having gas micro / nano bubbles is sprayed toward the substrate to be treated 7 as indicated by ⁇ in the figure while applying a voltage by the power supply 30, and residual deposits of resist film are removed from the non-treated substrate. Stripping or removal of contaminants consisting of metals or metal compounds is performed.
- a DC voltage in the range of 10 to 100 V or a pulse voltage having a voltage of 10 to 100 V and a frequency of 10 to 50 kHz. It is. In the present invention, it is preferable to use a pulse voltage as compared to a DC voltage.
- the cleaning apparatus shown in FIGS. 1 and 5 to 7 is a conventional micro / nano bubble generator, a device for heating gas micro / nano bubbles, and a nozzle header having a jet nozzle for jetting onto a substrate to be treated.
- a simple and compact device configuration can be constructed simply by adding a holder for supporting the substrate to be processed and the substrate to be processed.
- the cleaning apparatus shown in FIGS. 8 and 9 can be configured by attaching drying means or voltage application means to the substrate to be processed to the cleaning apparatus shown in FIGS. 1 and 5 to 7, respectively. An apparatus suitable for shortening the time and improving the efficiency of cleaning can be obtained.
- Example 1 According to the method disclosed in the patent document 4, air nanobubble water is produced by nanobubble water production device PMPM-5 (bellows pump type) (manufactured by Sigma Technology Co., Ltd.) and diluted 100 times with pure water to make a measurement sample Using. Moreover, the pure water before nano bubble preparation was used as a sample for reference. Nanobubbles produced before pure water is equivalent to a free water nanobubbles.
- Vitrobot Mark IV (manufactured by FEI) immediately freezes the air nanobubble water immediately after preparation to prepare a sample in which the nanobubbles are embedded in amorphous ice to prepare a sample for observation.
- the sample thickness is 200 nm.
- water (pure water) not containing nanobubbles was also rapidly frozen by the same sample rapid freezing apparatus and used as a reference sample.
- the sample thickness is 200 nm.
- a cryo-transmission electron microscope Titan Krios manufactured by FEI having an electron energy of 300 keV, nanobubbles embedded in amorphous ice were directly observed at a sample temperature of about 80K.
- the electron beam used for observation was about 20 electrons / ⁇ 2 by the low dose technique, and there was almost no rise in the sample temperature during imaging.
- FIG. 10 shows photographs of electron microscopic images of amorphous ice frozen with pure water containing air nanobubbles and amorphous ice frozen with pure water (water not containing nanobubbles).
- the particle size distribution of the bubble is shown below the electron micrograph.
- the photograph of the electron microscope image shown on the left side of FIG. 10 is an air nanobubble immediately observed after preparation by PMPM-5, and a circular contrast observed in the photograph is a nanobubble.
- the average particle size is 7 nm.
- the volume of amorphous ice used for the measurement of the histogram is 3.2 ⁇ 10 -14 cc (400 nm ⁇ 400 nm ⁇ 200 nm thickness), in which about 260 bubbles are contained.
- the concentration of air nanobubbles in this nanobubble water is estimated to be 8.1 ⁇ 10 17 cells / cc (ml) (81 kyocograms / cc (ml)), since nanobubble water diluted 100 times is observed. Ru.
- Pure water containing air nanobubbles shown on the left side of FIG. 10 was applied to the cleaning apparatus shown in FIG. 1 to clean the residual resist film deposited on the semiconductor wafer substrate.
- the temperature of the pure water containing air nanobubbles was raised to about 85 ° C. by the heat treatment device 4 capable of instantaneous heat treatment, and the temperature of the pure water containing air nanobubbles passing through the nozzle header 5 was adjusted to 70-75 ° C. .
- the minimum temperature of the adjustment temperature is specified by the treatment liquid used in the present invention It can be regarded as the heating temperature.
- the pure water that has been dissolved in air and heat-treated is emitted from the nozzle header 5 to generate micro / nano bubbles for cleaning.
- the semiconductor wafer substrate to be cleaned was cleaned while rotating the holder 6.
- cleaning that takes 30 minutes to completely strip off the resist film residue can be accomplished within 15 minutes or about 1/2 time if the temperature is raised to 70 to 75 ° C. I understand.
- Example 2 After producing ozone nano bubble water by nano bubble water production device PMPM-5 (manufactured by Sigma Technology Co., Ltd.) (manufactured by Sigma Technology Co., Ltd.) according to the method disclosed in the patent document 4, ozone nano bubbles that have passed about half a month are treated with pure water A 100-fold dilution was used as a measurement sample. The sample thickness is 200 nm. After rapidly freezing this sample in the same sample quick freezing apparatus as in Example 1, nanobubbles embedded in amorphous ice were observed directly at a sample temperature of about 80 K by the same cryotransmission electron microscopy as in Example 1. The electron beam used for observation was about 20 electrons / ⁇ 2 by the low dose technique, and there was almost no rise in the sample temperature during imaging.
- FIG. 11 The photograph of the electron microscope image observed using this sample and the particle size distribution of the bubble (a histogram showing the size dispersion) are shown in FIG. 11 below the photograph.
- the image shown in FIG. 11 is an observation of an ozone nanobubble about half a month after preparation by ⁇ ⁇ ⁇ ⁇ PM-5.
- the average particle size is 18 nm, which is slightly larger than the air nanobubbles shown in FIG. 10, and it is considered that the coarsening of the size is also caused by the coalescence.
- the volume of amorphous ice used for the measurement of the histogram is 3.2 ⁇ 10 -14 cc (400 nm ⁇ 400 nm ⁇ 200 nm thickness), in which about 21 bubbles are contained.
- the concentration of ozone nanobubbles in this nanobubble water is estimated to be 8.6 ⁇ 10 16 cells / cc (ml) (about 9 kyocatures / cc (ml)) because 100% diluted nanobubble water is observed Be done.
- the pure water containing ozone nanobubbles shown in FIG. 11 is applied to the cleaning apparatus shown in FIG. 1 to contaminate the metal or metal compound using four semiconductor wafer substrates whose surfaces are contaminated with the metal or metal compound.
- the temperature of pure water containing ozone nanobubbles was raised to about 80 ° C. by the heat treatment apparatus 4 capable of instantaneous heat treatment, and the temperature of pure water containing air nanobubbles passing through the nozzle header 5 was adjusted to 65 to 70 ° C. .
- Ozone is dissolved and heat-treated pure water is emitted from the nozzle header 5 to generate micro / nano bubbles for cleaning.
- the semiconductor wafer substrate to be cleaned was cleaned while rotating the holder 6.
- the washing time is 5 minutes.
- the analysis of the contaminants on the semiconductor wafer substrate was performed by elemental analysis (EDX measurement) with a scanning electron microscope.
- EDX measurement The results of quantitative analysis of elements on the semiconductor wafer substrate are shown in Table 1 below.
- the unit of each element amount shown in Table 1 is ( ⁇ 10 10 Atom / cm 2 ).
- the pure water containing ozone nanobubbles of this example was applied to the cleaning apparatus shown in FIG. 1, and the residual resist film adhering to the semiconductor wafer substrate was cleaned in the same manner as in Example 1. .
- the temperature of pure water containing ozone nanobubbles was raised to about 80 ° C. by the heat treatment apparatus 4 capable of instantaneous heat treatment, and the temperature of pure water containing air nanobubbles passing through the nozzle header 5 was adjusted to 65 to 70 ° C. .
- Ozone is dissolved and heat-treated pure water is emitted from the nozzle header 5 to generate micro / nano bubbles for cleaning. At this time, the semiconductor wafer substrate to be cleaned was cleaned while rotating the holder 6.
- Example 3 In addition to nanobubbles containing ozone, pure water further containing carbon dioxide gas (carbon dioxide gas) was used as the treatment liquid.
- a semiconductor wafer of the same size as that of Embodiment 2 is used as a substrate to be processed, which is applied to the cleaning apparatus shown in FIG. 1 and cleaning of a residual resist film deposited on a semiconductor wafer substrate by the same method as that of Embodiment 2.
- the pure water having nano bubbles used in the present embodiment introduces ozone and carbon dioxide gas (amount of about 1/5 of the amount of ozone) generated by the ozone generator in the dissolved gas enrichment step, and the dissolved ozone concentration is 200 ppm Using the above prepared, it was manufactured by the nano bubble water manufacturing apparatus ⁇ PM-5.
- the treatment solution thus prepared is allowed to stand for several days, and the nanobubbles containing ozone and carbon dioxide gas are measured by the same method as in Example 1.
- the average particle diameter is less than 30 nm and the density per 1 ml of treatment solution is also it was confirmed 10 is 16 / cc (ml) or more. Since the treatment solution was left for a shorter number of days than in Example 2, it had nanobubble particles with a finer particle size than the results shown in FIG. 11, and the density of the nanobubble particles also tended to be higher. .
- the temperature of the processing solution produced in this manner is raised to about 80 ° C. by the heat treatment apparatus 4 capable of instantaneous heat treatment, and the temperature of pure water containing nanobubbles of ozone and carbon dioxide gas passing through the nozzle header 5
- the temperature is adjusted to 65 to 70 ° C., and the nozzle header 5 is fired to perform washing while generating micro / nano bubbles.
- the semiconductor wafer substrate to be cleaned was cleaned while rotating the holder 6.
- Example 4 Using the processing solution containing nanobubbles of ozone prepared in the second embodiment and a semiconductor wafer of the same size as that of the second embodiment as a substrate to be treated, it is applied to the cleaning apparatus shown in FIG.
- the residual resist film deposited on the semiconductor wafer substrate was cleaned in the same manner as in Example 2 except that the temperature was changed to 50 to 55 ° C. instead of 65 to 70 ° C.
- a drying means 27 shown in FIG. 8 a spin dryer of cassette type was used, and after loading the substrate 7 to be processed which is a semiconductor wafer, drying was carried out for 5 minutes by centrifugal force + intake drying method of taking in environmental air.
- the dried target substrate 7 (semiconductor wafer) was taken out and supported by a holder 6 having a rotation mechanism as shown by a dotted line in the figure. Then, while the substrate 7 to be treated is rotated by the holder 6, the treatment liquid having ozone micro / nano bubbles is ejected from the nozzle header 5 as indicated by ⁇ in the drawing, and cleaning is performed while generating micro / nano bubbles.
- the heating of the processing solution containing ozone nanobubbles was carried out by raising the temperature to about 60 ° C. by the heating device 4 capable of instantaneous heat treatment, and the temperature of the processing solution passing through the nozzle header 5 was adjusted to 50-55 ° C.
- the semiconductor wafer is adhered on the semiconductor wafer substrate under the same cleaning conditions using a semiconductor wafer not dried beforehand.
- the residual resist film was washed.
- the temperature of the treatment solution was adjusted to 50 to 55 ° C. as in the case of washing after the drying step.
- the drying process of the substrate 7 may be simplified by using, for example, the cleaning apparatus shown in FIG. 6 in addition to the drying means 27 shown in FIG.
- the centrifugal force can be increased by rotating the substrate to be processed mounted on the holder 6 at a high speed in advance without performing the drying process before injecting the micro / nano bubbles of ozone. Remove water droplets and moisture while using. At this time, dry air or high-temperature air may be sprayed from the hot air device 22 onto the substrate in order to more reliably remove water droplets and moisture.
- the processing solution having micro-nano bubbles of ozone and heated to 30 to 90 ° C., preferably 50 to 85 ° C. is sprayed toward the surface of the substrate 7 to be processed Do. Thereby, the residue of the resist film can be completely peeled off.
- Example 5 Using the processing solution using pure water containing ozone nanobubbles prepared in the second embodiment and a semiconductor wafer of the same size as the second embodiment as a substrate to be treated, as shown in FIG. It applied to the cleaning device which it has.
- the residual resist film deposited on the semiconductor wafer substrate was cleaned in the same manner as in Example 2 except that the temperature condition of the processing solution was changed to 50 to 55 ° C. instead of 65 to 70 ° C. .
- the present embodiment differs from the cleaning method shown in the second embodiment in that the processing solution containing nanobubbles of ozone is jetted while the ultrasonic wave generator 8 applies ultrasonic vibration to the substrate 7 to be processed.
- the frequency of ultrasonic vibration was 50 kHz.
- the time for completely peeling off the residue of the resist film was less than 5 minutes. This time is shorter than within 10 minutes of the case where the ultrasonic vibration examined in the fourth embodiment is not applied (substrate 7 to be processed which has not been previously dried). Thus, the cleaning time could be shortened to about 1/2 or less by applying ultrasonic vibration when cleaning the substrate 7 to be processed.
- Example 6 It applied to the washing
- the residual resist film deposited on the semiconductor wafer substrate was cleaned in the same manner as in Example 2 except that the temperature condition of the processing solution was changed to 50 to 55 ° C. instead of 65 to 70 ° C. .
- the present embodiment is different from the cleaning method shown in the second embodiment in that the treatment liquid containing ozone nanobubbles is sprayed while applying a voltage to the substrate 7 by the voltage application means 31 in the cleaning of the substrate 7. .
- an inductive pulse power source is used as the power source 30, and the electrode 29 disposed near the nozzle header and the holder 6 for supporting the processing substrate 7 are on the (+) side of Washing was carried out while applying a pulse voltage with the voltage and frequency set to 32 V and 20 kHz, respectively.
- the time for completely removing the residue of the resist film was less than 3 minutes. This time is shorter than within 10 minutes in the case where the ultrasonic vibration examined in the fourth embodiment is not applied (the target substrate 7 which has not been previously dried), and a voltage is applied when the target substrate 7 is cleaned. As a result, the cleaning time could be reduced to less than about 1/3.
- the voltage application method applied in this embodiment may be used in combination with at least one of the above-described method of drying the non-treated substrate in advance and the method of applying ultrasonic vibration. As a result, the cleaning time can be further shortened.
- the cleaning method according to the present invention is effective in removing the deposition of the resist residue on the substrate or removing the contaminant due to the metal or the metal compound in a shorter time than the conventional method while reducing the load on the environment. And can be done reliably.
- the cleaning apparatus according to the present invention comprises an apparatus for heating the gas micro-nano bubbles and a jet nozzle for injecting a processing solution containing micro-nano bubbles onto a substrate to be processed, to a conventional micro-nano bubble generating apparatus.
- the cleaning method of the present invention can be applied not only to glass substrates and semiconductor wafer substrates but also to other fields, for example, metal cleaning at metal processing, agricultural product cleaning, soil cleaning, etc. .
Abstract
Description
[1]本発明は、基板上にレジスト膜が付着した被処理基板若しくは表面が金属又は金属化合物で汚染された被処理基板に対して、氷包埋法によってクライオ透過型電子顕微鏡で測定したときの平均粒径が100nm以下である気体のマイクロ・ナノバブルを含有し、且つ、温度が30~90℃に保たれている処理液を噴射することにより、前記レジスト膜の剥離若しくは前記金属又は金属化合物の除去を行うことを特徴とするマイクロ・ナノバブルによる洗浄方法を提供する。
[2]本発明は、前記気体のマイクロ・ナノバブルが、氷包埋法によってクライオ透過型電子顕微鏡で測定したときの平均粒径が30nm以下であることを特徴とする前記[1]に記載のマイクロ・ナノバブルによる洗浄方法を提供する。
[3]本発明は、前記処理液に含まれる気体のマイクロ・ナノバブルにおいて、氷包埋法によってクライオ透過型電子顕微鏡で測定したときの密度が1mlあたり108個以上であることを特徴とする前記[1]又は[2]に記載のマイクロ・ナノバブルによる洗浄方法を提供する。
[4]本発明は、前記気体のマイクロ・ナノバブルを含有する処理液が、溶存気体を含む溶液を、2以上の貫通小穴を周方向に有する筒の外部から該貫通小穴を通して大気圧以上の圧力で噴射させるときに、前記筒の径方向断面と平行な同一平面上で対向するように配置された前記2以上の貫通小穴のそれぞれの開口部から噴射した溶存液を前記筒の中心に水撃が集中するように衝突させることによって発生させた気体のマイクロ・ナノバブルを含有した処理液であることを特徴とする前記[1]~[3]の何れかに記載のマイクロ・ナノバブルによる洗浄方法を提供する。
[5]本発明は、前記気体がオゾン又は酸素であり、前記処理液が、オゾン又は酸素のマイクロ・ナノバブルを含有する純水であることを特徴とする前記[1]~[4]の何れかに記載のマイクロ・ナノバブルによる洗浄方法を提供する。
[6]本発明は、前記気体が、オゾン又は酸素に加えて、二酸化炭素及び過酸化水素の少なくとも何れかを含む気体であることを特徴とする前記[1]~[5]の何れかに記載のマイクロ・ナノバブルによる洗浄方法を提供する。
[7]本発明は、前記処理液を噴霧する前に、前記非処理基板の上の水滴及び水分を乾燥させる工程を有することを特徴とする前記[1]~[6]の何れかに記載のマイクロ・ナノバブルによる洗浄方法を提供する。
[8]本発明は、前記気体のマイクロ・ナノバブルを含有する処理液を、洗浄対象物である前記被処理基板に超音波振動を与えながら噴射させることを特徴とする前記[1]~[7]の何れかに記載のマイクロ・ナノバブルによる洗浄方法を提供する。
[9]本発明は、前記非処理基板と前記処理液を噴射するノズルヘッダーの近くに配置する電極との間に電圧を印加することを特徴とする前記[1]~[7]の何れかに記載のマイクロ・ナノバブルによる洗浄方法を提供する。
[10]本発明は、前記処理液の温度が、50℃を超え85℃以下であることを特徴とする前記[1]~[9]の何れかに記載のマイクロ・ナノバブルによる洗浄方法。
[11]本発明は、気体及び液体をそれぞれ吸引する手段と、前記気体及び前記液体を同時に加圧して搬送する手段と、該搬送された前記気体を含む前記液体を新たな気体と混合させることによって溶存気体を富化させるための気液混合槽と、該加熱装置によって加熱された溶存液を用いてマイクロ・ナノバブルを発生させるために、空洞の筒、該筒の周方向に2以上の貫通小穴のそれぞれの開口部が前記筒の径方向断面と平行な同一平面上で対向するように配置された前記2以上の貫通小穴、及び前記筒の少なくとも片端部にマイクロ・ナノバブル吐出口を有し、前記貫通小穴は該貫通小穴の断面中心部を通る延長線のすべてが前記筒の中心で交差するように配置される噴射ノズルと、前記気体のマイクロ・ナノバブルを含有する処理液を、表面にレジスト膜が付着した被処理基板又は表面が金属化合物で汚染された被処理基板に噴射するために前記噴射ノズルに接続されたノズルヘッダーと、を有するマイクロ・ナノバブル発生装置を備え、さらに、被処理基板支持を支持するために前記ノズルヘッダーに対向して設けるホルダー、及び前記気体のマイクロ・ナノバブルを含有する処理液を30~90℃に加熱するための加熱手段を備えることを特徴とするマイクロ・ナノバブルによる洗浄装置を提供する。
[12]本発明は、前記加熱装置が、前記気液混合槽から送出された直後の前記気液混合の状態にある溶存液を加熱するために備える加熱装置であることと特徴とする前記[11]に記載のマイクロ・ナノバブルによる洗浄装置を提供する。
[13]本発明は、前記加熱装置が、前記気液混合槽の底部及び側部の少なくとも何れかの場所にヒータとして具備されていることを特徴とする前記[12]に記載のマイクロ・ナノバブルによる洗浄装置を提供する。
[14]本発明は、前記[11]~[13]の何れかに記載のマイクロ・ナノバブルによる洗浄装置が、さらに、前記非処理基板の上の水滴及び水分を乾燥させる乾燥手段を有することを特徴とするマイクロ・ナノバブルによる洗浄装置を提供する。
[15]本発明は、前記ホルダーが、前記被処理基板に超音波振動を与えることができる超音波発生装置と接続していることを特徴とする前記[11]~[14]の何れかに記載のマイクロ・ナノバブルによる洗浄装置を提供する。
[16]本発明は、前記非処理基板を支持するホルダーと前記処理液を噴射するノズルヘッダーの近くに配置する電極との間に電圧を印加する電圧印加手段を有することを特徴とする前記[11]~[14]の何れかに記載のマイクロ・ナノバブルによる洗浄装置を提供する。
[17]本発明は、前記加熱装置が、さらに、前記ノズルヘッダー及び前記ホルダーの少なくとも何れかを加熱するための加熱装置又は温風発生装置を具備することを特徴とする前記[11]~[16]の何れかに記載のマイクロ・ナノバブルによる洗浄装置を提供する。
[18]本発明は、前記加熱装置が、さらに、前記ノズルヘッダー及び前記ホルダーを一つの部屋として囲み、前記部屋の内部を30~90℃の温度に制御するための空調機を備えることを特徴とする前記[11]~[17]の何れかに記載のマイクロ・ナノバブルによる洗浄装置を提供する。
[19]本発明は、前記加熱するときの温度が50~85℃であることを特徴とする前記[11]~[18]の何れかに記載のマイクロ・ナノバブルによる洗浄装置を提供する。
前記特許文献4に開示された方法に従ってナノバブル水作製装置ΣPM-5(ベローズポンプ式) (シグマテクノロジー有限会社製)により空気ナノバブル水を作製し、純水によって100倍に希釈して測定用試料として用いた。また、参考用試料としてナノバブル作製前の純水を用いた。ナノバブル作製前の純水は、ナノバブルを含まない水に相当する。
前記特許文献4に開示された方法に従ってナノバブル水作製装置ΣPM-5 (べローズポンプ式) (シグマテクノロジー有限会社製)によりオゾンナノバブル水を作製した後、半月程度時間を経たオゾンナノバブルを純水によって100倍に希釈したものを測定試料として用いた。試料厚さは200nmである。この試料を実施例1と同じ試料急速凍結装置で急速凍結させた後、実施例1と同じクライオ透過型電子顕微によって試料温度約80Kにおいてアモルファス氷中に包埋されたナノバブルを直接観察した。観察に用いる電子線は、Low dose技術によって20電子/Å2程度であり、撮影中の試料温度の上昇はほとんどなかった。
オゾンを含むナノバブルに加え、さらに二酸化炭素の気体(炭酸ガス)を含ませた純水を処理液として使用した。被処理基板として実施例2と同じサイズの半導体ウエハを用いて、図1に示す洗浄装置に適用し、実施例2と同様の方法で半導体のウェハ基板上に付着している残渣レジスト膜の洗浄を行った。本実施例で使用するナノバブルを有する純水は、溶存気体富化工程においてオゾン発生器によって発生させたオゾンと炭酸ガス(オゾン量の約1/5の量)を導入し、溶存オゾン濃度を200ppm以上に調製したものを用いて、前記ナノバブル水作製装置ΣPM-5によって作製した。このようにして作製した処理液を数日間放置した後、オゾンと炭酸ガスとを含むナノバブルを実施例1と同じ方法で測定した結果、平均粒径が30nm未満で、処理液1mlあたりの密度も1016個/cc (ml)以上であることが確認された。この処理液は放置日数が前記実施例2に比べて短いため、図11に示す結果と比べてより微細粒径のナノバブル粒子を有し、また、ナノバブル粒子の密度もより高くなる傾向にあった。
前記実施例2で作製したオゾンのナノバブルを含む処理液と、被処理基板として実施例2と同じサイズの半導体ウエハとを用いて、図8に示す洗浄装置に適用し、前記処理液の温度条件を65~70℃に代えて50~55℃に変更したこと以外は、実施例2と同様の方法で半導体のウェハ基板上に付着している残渣レジスト膜の洗浄を行った。図8に示す乾燥手段27としては、カセット方式のスピンドライヤーを使用し、半導体ウエハーである被処理基板7を投入した後、環境エアを取り込む遠心力+吸気乾燥方式で乾燥を5分間行った。次いで、乾燥後の被処理基板7(半導体ウエハー)を取出して、図中の点線で示すように、回転機構を有するホルダー6に支持した。そして、ホルダー6により被処理基板7は回転させながらノズルヘッダー5からオゾンマイクロ・ナノバブルを有する処理液を図中の↓で示すように発射し、マイクロ・ナノバブルを発生させながら洗浄を行った。オゾンナノバブルを含む処理液の加熱は、瞬間的に加熱処理ができる加熱処理装置4によって約60℃まで温度を上げ、ノズルヘッダー5を通過する前記処理液の温度を50~55℃に調整した。
前記実施例2で作製したオゾンナノバブルを含む純水を使用した処理液と、被処理基板として実施例2と同じサイズの半導体ウエハとを用いて、図1に示すように超音波発生装置8を有する洗浄装置に適用した。処理液の温度条件を65~70℃に代えて50~55℃に変更したこと以外は、実施例2と同様の方法で半導体のウェハ基板上に付着している残渣レジスト膜の洗浄を行った。本実施例は、超音波発生装置8によって被処理基板7に超音波振動を与えながらオゾンのナノバブルを含む処理液を噴射させる点で、前記実施例2に示す洗浄方法とは異なる。超音波振動の周波数は50kHzとした。
前記実施例2で作製したオゾンナノバブルを含む純水を使用した処理液と、被処理基板として実施例2と同じサイズの半導体ウエハとを用いて、図9に示す洗浄装置に適用した。処理液の温度条件を65~70℃に代えて50~55℃に変更したこと以外は、実施例2と同様の方法で半導体のウェハ基板上に付着している残渣レジスト膜の洗浄を行った。本実施例は、被処理基板7の洗浄において電圧印加手段31によって被処理基板7に電圧を印加しながらオゾンナノバブルを含む処理液を噴射させる点で、前記実施例2に示す洗浄方法とは異なる。図9に示す洗浄装置において、電源30として誘導性パルスパワー電源を使用し、ノズルヘッダーの近くに配置する電極29と被処理基板7を支持するホルダー6とを電源30の(+)側及び(-)側にそれぞれ接続し、電圧及び周波数をそれぞれ32V及び20kHzに設定したパルス電圧を印加しながら洗浄を行った。
Claims (19)
- 基板上にレジスト膜が付着した被処理基板若しくは表面が金属又は金属化合物で汚染された被処理基板に対して、氷包埋法によってクライオ透過型電子顕微鏡で測定したときの平均粒径が100nm以下である気体のマイクロ・ナノバブルを含有し、且つ、温度が30~90℃に保たれている処理液を噴射することにより、前記レジスト膜の剥離若しくは前記金属又は金属化合物の除去を行うことを特徴とするマイクロ・ナノバブルによる洗浄方法。
- 前記気体のマイクロ・ナノバブルが、氷包埋法によってクライオ透過型電子顕微鏡で測定したときの平均粒径が30nm以下であることを特徴とする請求項1に記載のマイクロ・ナノバブルによる洗浄方法。
- 前記処理液に含まれる気体のマイクロ・ナノバブルは、氷包埋法によってクライオ透過型電子顕微鏡で測定したときの密度が1mlあたり108個以上であることを特徴とする請求項1又は2に記載のマイクロ・ナノバブルによる洗浄方法。
- 前記気体のマイクロ・ナノバブルを含有する処理液が、溶存気体を含む溶液を、2以上の貫通小穴を周方向に有する筒の外部から該貫通小穴を通して大気圧以上の圧力で噴射させるときに、前記筒の径方向断面と平行な同一平面上で対向するように配置された前記2以上の貫通小穴のそれぞれの開口部から噴射した溶存液を前記筒の中心に水撃が集中するように衝突させることによって発生させた気体のマイクロ・ナノバブルを含有した処理液であることを特徴とする請求項1~3の何れかに記載のマイクロ・ナノバブルによる洗浄方法。
- 前記気体がオゾン又は酸素であり、前記処理液が、前記オゾン又は酸素のマイクロ・ナノバブルを含有する純水であることを特徴とする請求項1~4の何れかに記載のマイクロ・ナノバブルによる洗浄方法。
- 前記気体が、オゾン又は酸素に加えて、二酸化炭素及び過酸化水素の少なくとも何れかを含む気体であることを特徴とする請求項1~5の何れかに記載のマイクロ・ナノバブルによる洗浄方法。
- 前記処理液を噴霧する前に、前記非処理基板上の水滴及び水分を乾燥させる工程を有することを特徴とする請求項1~6の何れかに記載のマイクロ・ナノバブルによる洗浄方法
- 前記気体のマイクロ・ナノバブルを含有する処理液を、洗浄対象物である前記被処理基板に超音波振動を与えながら噴射させることを特徴とする請求項1~7の何れかに記載のマイクロ・ナノバブルによる洗浄方法。
- 前記非処理基板と前記処理液を噴射するノズルヘッダーの近くに配置する電極との間に電圧を印加することを特徴とする請求項1~7の何れかに記載のマイクロ・ナノバブルによる洗浄方法。
- 前記処理液の温度が、50℃を超え85℃以下であることを特徴とする請求項1~9の何れかに記載のマイクロ・ナノバブルによる洗浄方法。
- 気体及び液体をそれぞれ吸引する手段と、前記気体及び前記液体を同時に加圧して搬送する手段と、
該搬送された前記気体を含む前記液体を新たな気体と混合させることによって溶存気体を富化させるための気液混合槽と、
該加熱装置によって加熱された溶存液を用いてマイクロ・ナノバブルを発生させるために、空洞の筒、該筒の周方向に2以上の貫通小穴のそれぞれの開口部が前記筒の径方向断面と平行な同一平面上で対向するように配置された前記2以上の貫通小穴、及び前記筒の少なくとも片端部にマイクロ・ナノバブル吐出口を有し、前記貫通小穴は該貫通小穴の断面中心部を通る延長線のすべてが前記筒の中心で交差するように配置される噴射ノズルと、
前記気体のマイクロ・バブルを含有する処理液を、基板上にレジスト膜が付着した被処理基板又は表面が金属化合物で汚染された被処理基板に噴射するため噴射ノズルに接続されたノズルヘッダーと、を有するマイクロ・ナノバブル装置を備え、さらに、
被処理基板を支持するために前記ノズルヘッダーに対向して設けるホルダー、及び前記気体のマイクロ・バブルを含有する処理液を30~90℃に加熱するための加熱手段を備えることを特徴とするマイクロ・ナノバブルによる洗浄装置。 - 前記加熱装置が、前記気液混合槽から送出された直後の前記気液混合の状態にある溶存液を加熱するために備える加熱装置であることと特徴とする請求項11に記載のマイクロ・ナノバブルによる洗浄装置。
- 前記加熱装置が、前記気液混合槽の底部及び側部の少なくとも何れかの場所にヒータとして具備されていることを特徴とする請求項12に記載のマイクロ・ナノバブルによる洗浄装置。
- 請求項11~13の何れかに記載のマイクロ・ナノバブルによる洗浄装置が、さらに、前記非処理基板の上の水滴及び水分を乾燥させる乾燥手段を有することを特徴とするマイクロ・ナノバブルによる洗浄装置。
- 前記ホルダーは、前記被処理基板に超音波振動を与えることができる超音波発生装置と接続していることを特徴とする請求項11~14の何れかに記載のマイクロ・ナノバブルによる洗浄装置。
- 前記非処理基板を支持するホルダーと前記処理液を噴射するノズルヘッダーの近くに配置する電極との間に、電圧を印加する電圧印加手段を有することを特徴とする請求項11~14の何れかに記載のマイクロ・ナノバブルによる洗浄装置。
- 前記加熱装置が、さらに、前記ノズルヘッダー及び前記ホルダーの少なくとも何れかを加熱するための加熱装置又は温風発生装置を具備することを特徴とする請求項11~16の何れかに記載のマイクロ・ナノバブルによる洗浄装置。
- 前記加熱装置が、さらに、前記ノズルヘッダー及び前記ホルダーを一つの部屋として囲み、前記部屋の内部を30~90℃の温度に制御するための空調機を備えることを特徴とする請求項11~17の何れかに記載のマイクロ・ナノバブルによる洗浄装置。
- 前記加熱するときの温度が50~85℃であることを特徴とする請求項11~18の何れかに記載のマイクロ・ナノバブルによる洗浄装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/319,041 US10632506B2 (en) | 2014-12-02 | 2015-12-01 | Cleaning method and cleaning device using micro/nano-bubbles |
JP2016562624A JP6501191B2 (ja) | 2014-12-02 | 2015-12-01 | マイクロ・ナノバブルによる洗浄方法及び洗浄装置 |
KR1020167035300A KR101934627B1 (ko) | 2014-12-02 | 2015-12-01 | 마이크로·나노 버블에 의한 세정 방법 및 세정 장치 |
EP15865774.2A EP3144962A4 (en) | 2014-12-02 | 2015-12-01 | Cleaning method and cleaning device using micro/nano-bubbles |
CN201580033097.9A CN106463387B (zh) | 2014-12-02 | 2015-12-01 | 采用微型纳米气泡的清洗方法和清洗装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014244538 | 2014-12-02 | ||
JP2014-244538 | 2014-12-02 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/319,041 A-371-Of-International US10632506B2 (en) | 2014-12-02 | 2015-12-01 | Cleaning method and cleaning device using micro/nano-bubbles |
US16/510,226 Division US20200238654A9 (en) | 2014-12-02 | 2019-07-12 | Cleaning device using micro/nano-bubbles |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2016088731A1 true WO2016088731A1 (ja) | 2016-06-09 |
Family
ID=56091673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2015/083678 WO2016088731A1 (ja) | 2014-12-02 | 2015-12-01 | マイクロ・ナノバブルによる洗浄方法及び洗浄装置 |
Country Status (6)
Country | Link |
---|---|
US (2) | US10632506B2 (ja) |
EP (1) | EP3144962A4 (ja) |
JP (1) | JP6501191B2 (ja) |
KR (1) | KR101934627B1 (ja) |
CN (1) | CN106463387B (ja) |
WO (1) | WO2016088731A1 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018202592A (ja) * | 2017-06-09 | 2018-12-27 | Towa株式会社 | 研削装置および研削方法 |
JP2019201014A (ja) * | 2018-05-14 | 2019-11-21 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置および基板処理システム |
JP2020155721A (ja) * | 2019-03-22 | 2020-09-24 | 株式会社Screenホールディングス | 基板処理方法 |
WO2021039357A1 (ja) * | 2019-08-29 | 2021-03-04 | 株式会社Screenホールディングス | 基板処理方法 |
JP2021068834A (ja) * | 2019-10-25 | 2021-04-30 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP2021097120A (ja) * | 2019-12-17 | 2021-06-24 | 株式会社荏原製作所 | レジスト除去システムおよびレジスト除去方法 |
JP2021097117A (ja) * | 2019-12-17 | 2021-06-24 | 株式会社荏原製作所 | レジスト除去システムおよびレジスト除去方法 |
RU2759202C2 (ru) * | 2017-08-31 | 2021-11-10 | Кэнон Кабусики Кайся | Способ генерирования ультрамелких пузырьков, устройство для производства и способ производства содержащей ультрамелкие пузырьки жидкости и содержащая ультрамелкие пузырьки жидкость |
JP7000517B1 (ja) | 2020-08-24 | 2022-02-04 | 株式会社御池鐵工所 | 消毒剤生成装置及び消毒剤生成方法 |
JP7413891B2 (ja) | 2020-03-30 | 2024-01-16 | コニカミノルタ株式会社 | 残留トナーの除去方法、トナー容器のリユース方法およびトナー容器のリサイクル方法 |
JP7467184B2 (ja) | 2020-03-19 | 2024-04-15 | 株式会社レゾナック・ガスプロダクツ | 洗浄装置及び洗浄方法 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016164977A (ja) * | 2015-02-27 | 2016-09-08 | キヤノン株式会社 | ナノインプリント用液体材料、ナノインプリント用液体材料の製造方法、硬化物パターンの製造方法、光学部品の製造方法、回路基板の製造方法、および電子部品の製造方法 |
CN109415686B (zh) * | 2016-05-13 | 2023-02-21 | 株式会社希古玛科技 | 可给药到活体的水溶液及其制备方法 |
JP6653620B2 (ja) * | 2016-05-24 | 2020-02-26 | 大同メタル工業株式会社 | 洗浄装置 |
JP7086547B2 (ja) * | 2017-08-31 | 2022-06-20 | キヤノン株式会社 | ウルトラファインバブル含有液の製造装置および製造方法 |
GB2573012A (en) * | 2018-04-20 | 2019-10-23 | Zeeko Innovations Ltd | Fluid jet processing |
US20190363018A1 (en) * | 2018-05-24 | 2019-11-28 | Semiconductor Components Industries, Llc | Die cleaning systems and related methods |
CN108905663A (zh) * | 2018-09-19 | 2018-11-30 | 佛山市通海卫浴设备有限公司 | 可自动排污防堵塞的高效微纳米气泡发生装置及发生方法 |
CN111610698A (zh) * | 2019-02-22 | 2020-09-01 | 北京北方华创微电子装备有限公司 | 光刻胶去除装置和去除光刻胶的方法 |
JP7277176B2 (ja) | 2019-02-28 | 2023-05-18 | キヤノン株式会社 | ウルトラファインバブル生成方法、およびウルトラファインバブル生成装置 |
US11904366B2 (en) | 2019-03-08 | 2024-02-20 | En Solución, Inc. | Systems and methods of controlling a concentration of microbubbles and nanobubbles of a solution for treatment of a product |
CN109987726A (zh) * | 2019-03-19 | 2019-07-09 | 深圳源域生态科创中心有限公司 | 一种多级旋切破碎式微纳米气泡发生方法及装置 |
KR102215207B1 (ko) * | 2019-07-22 | 2021-02-15 | 주식회사 싸이노스 | 반도체장비 부품용 세정장치 |
CN111022105B (zh) * | 2019-12-11 | 2021-10-26 | 江西维尔安石环保科技有限公司 | 生物液膜综合矿山抑尘系统及装置 |
CN111105996B (zh) * | 2020-01-03 | 2021-11-09 | 长江存储科技有限责任公司 | 待清洗工件的清洗方法及清洗设备 |
CN112058752A (zh) * | 2020-08-13 | 2020-12-11 | 刘雄 | 一种用于热处理工件的清洗装置 |
CN112345434B (zh) * | 2020-10-23 | 2022-02-15 | 大连理工大学 | 一种微纳米气泡内部压力计算方法 |
DE112021005594T5 (de) * | 2020-10-23 | 2023-08-03 | Sumco Corporation | Verfahren zum Reinigen einer Rohrleitung einer Einzelwaferverarbeitungs-Waferreinigungsvorrichtung |
CN112537823B (zh) * | 2020-11-09 | 2023-03-28 | 济南大学 | 一种微纳米气泡技术强化化学清洗控制超滤膜老化的方法 |
KR102437879B1 (ko) * | 2020-11-10 | 2022-09-01 | 주식회사 어썸리드 | 나노-마이크로 버블 세정장치 및나노-마이크로 버블 세정방법 |
CN112723565A (zh) * | 2020-12-11 | 2021-04-30 | 纳美智创(杭州)科技有限责任公司 | 一种用于水体净化的微纳米曝气系统 |
KR102424693B1 (ko) | 2021-02-04 | 2022-07-27 | 윤태열 | 나노버블을 이용하는 세정액 재생장치 및 이를 이용하는 기판 처리 장치 |
CN113071022B (zh) * | 2021-03-20 | 2021-11-19 | 惠州市纵胜电子材料有限公司 | 一种热固性树脂浸胶系统 |
CN113293099B (zh) * | 2021-06-01 | 2023-12-22 | 中国科学院重庆绿色智能技术研究院 | 研究微纳米气泡与细胞相互作用的方法 |
CN113244816B (zh) * | 2021-07-13 | 2021-10-01 | 东营金昱技术开发有限公司 | 一种油井缓蚀清垢防垢剂生产用配料装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009170709A (ja) * | 2008-01-17 | 2009-07-30 | Shibaura Mechatronics Corp | 基板の処理装置及び処理方法 |
JP2011088979A (ja) * | 2009-10-21 | 2011-05-06 | Panasonic Electric Works Co Ltd | 洗浄液、洗浄方法、洗浄液製造装置 |
JP2011129743A (ja) * | 2009-12-18 | 2011-06-30 | Shibaura Mechatronics Corp | 基板処理方法および基板処理装置 |
WO2012090815A1 (ja) * | 2010-12-28 | 2012-07-05 | シャープ株式会社 | レジスト除去装置及びレジスト除去方法 |
JP2013146714A (ja) * | 2012-01-23 | 2013-08-01 | Idec Corp | 微細気泡生成装置 |
JP2013532629A (ja) * | 2010-07-16 | 2013-08-19 | テクニカル ユニバーシティ オブ デンマーク | ナノ粒子誘導放射線治療 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW294821B (ja) * | 1994-09-09 | 1997-01-01 | Tokyo Electron Co Ltd | |
JP2008192630A (ja) * | 2006-03-20 | 2008-08-21 | Eiji Matsumura | 電子・機械部品洗浄方法及び電子・機械部品洗浄装置 |
JP2008300429A (ja) * | 2007-05-29 | 2008-12-11 | Toshiba Corp | 半導体基板洗浄方法、半導体基板洗浄装置、及び液中気泡混合装置 |
JP2009072649A (ja) * | 2007-09-18 | 2009-04-09 | Univ Of Tokyo | ナノバブル溶液、ナノバブル溶液を製造する方法及び装置、ナノバブル溶液の利用方法 |
JP2009111093A (ja) * | 2007-10-29 | 2009-05-21 | Covalent Materials Corp | 半導体基板の製造方法 |
JP5153305B2 (ja) | 2007-11-20 | 2013-02-27 | 芝浦メカトロニクス株式会社 | レジスト膜の剥離装置及び剥離方法 |
JP5448385B2 (ja) * | 2008-07-30 | 2014-03-19 | 芝浦メカトロニクス株式会社 | 基板処理装置および基板処理方法 |
JP5342220B2 (ja) * | 2008-12-05 | 2013-11-13 | 芝浦メカトロニクス株式会社 | 基板処理装置 |
JP2010238992A (ja) | 2009-03-31 | 2010-10-21 | Sharp Corp | リフトオフ方法及び薄膜トランジスタの製造方法 |
US20120312782A1 (en) * | 2010-02-18 | 2012-12-13 | Sharp Kabushiki Kaisha | Etching method and etching device |
KR101207384B1 (ko) | 2011-03-25 | 2012-12-04 | (주) 엠에스피 | 마이크로 나노버블을 이용한 반도체 세정방법 및 그 장치 |
JP5555892B2 (ja) * | 2012-01-18 | 2014-07-23 | シグマテクノロジー有限会社 | マイクロ・ナノバブルの発生方法、発生ノズル及び発生装置 |
JP6232212B2 (ja) * | 2012-08-09 | 2017-11-15 | 芝浦メカトロニクス株式会社 | 洗浄液生成装置及び基板洗浄装置 |
JP2014090031A (ja) | 2012-10-29 | 2014-05-15 | Sharp Corp | エッチング方法及びエッチング装置 |
-
2015
- 2015-12-01 KR KR1020167035300A patent/KR101934627B1/ko active IP Right Grant
- 2015-12-01 CN CN201580033097.9A patent/CN106463387B/zh active Active
- 2015-12-01 EP EP15865774.2A patent/EP3144962A4/en not_active Withdrawn
- 2015-12-01 WO PCT/JP2015/083678 patent/WO2016088731A1/ja active Application Filing
- 2015-12-01 JP JP2016562624A patent/JP6501191B2/ja active Active
- 2015-12-01 US US15/319,041 patent/US10632506B2/en active Active
-
2019
- 2019-07-12 US US16/510,226 patent/US20200238654A9/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009170709A (ja) * | 2008-01-17 | 2009-07-30 | Shibaura Mechatronics Corp | 基板の処理装置及び処理方法 |
JP2011088979A (ja) * | 2009-10-21 | 2011-05-06 | Panasonic Electric Works Co Ltd | 洗浄液、洗浄方法、洗浄液製造装置 |
JP2011129743A (ja) * | 2009-12-18 | 2011-06-30 | Shibaura Mechatronics Corp | 基板処理方法および基板処理装置 |
JP2013532629A (ja) * | 2010-07-16 | 2013-08-19 | テクニカル ユニバーシティ オブ デンマーク | ナノ粒子誘導放射線治療 |
WO2012090815A1 (ja) * | 2010-12-28 | 2012-07-05 | シャープ株式会社 | レジスト除去装置及びレジスト除去方法 |
JP2013146714A (ja) * | 2012-01-23 | 2013-08-01 | Idec Corp | 微細気泡生成装置 |
Non-Patent Citations (1)
Title |
---|
See also references of EP3144962A4 * |
Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018202592A (ja) * | 2017-06-09 | 2018-12-27 | Towa株式会社 | 研削装置および研削方法 |
US11766685B2 (en) | 2017-08-31 | 2023-09-26 | Canon Kabushiki Kaisha | Ultrafine bubble generating method, ultrafine bubble-containing liquid manufacturing apparatus and manufacturing method, and ultrafine bubble-containing liquid |
RU2759202C2 (ru) * | 2017-08-31 | 2021-11-10 | Кэнон Кабусики Кайся | Способ генерирования ультрамелких пузырьков, устройство для производства и способ производства содержащей ультрамелкие пузырьки жидкости и содержащая ультрамелкие пузырьки жидкость |
JP7142461B2 (ja) | 2018-05-14 | 2022-09-27 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置および基板処理システム |
JP2019201014A (ja) * | 2018-05-14 | 2019-11-21 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置および基板処理システム |
TWI796479B (zh) * | 2018-05-14 | 2023-03-21 | 日商東京威力科創股份有限公司 | 基板處理方法、基板處理裝置及基板處理系統 |
JP2020155721A (ja) * | 2019-03-22 | 2020-09-24 | 株式会社Screenホールディングス | 基板処理方法 |
WO2020195176A1 (ja) * | 2019-03-22 | 2020-10-01 | 株式会社Screenホールディングス | 基板処理方法 |
TWI783211B (zh) * | 2019-03-22 | 2022-11-11 | 日商斯庫林集團股份有限公司 | 基板處理方法 |
WO2021039357A1 (ja) * | 2019-08-29 | 2021-03-04 | 株式会社Screenホールディングス | 基板処理方法 |
JP7441620B2 (ja) | 2019-08-29 | 2024-03-01 | 株式会社Screenホールディングス | 基板処理方法 |
JP7341850B2 (ja) | 2019-10-25 | 2023-09-11 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP2021068834A (ja) * | 2019-10-25 | 2021-04-30 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
JP7265466B2 (ja) | 2019-12-17 | 2023-04-26 | 株式会社荏原製作所 | レジスト除去システムおよびレジスト除去方法 |
JP2021097117A (ja) * | 2019-12-17 | 2021-06-24 | 株式会社荏原製作所 | レジスト除去システムおよびレジスト除去方法 |
JP2021097120A (ja) * | 2019-12-17 | 2021-06-24 | 株式会社荏原製作所 | レジスト除去システムおよびレジスト除去方法 |
JP7467184B2 (ja) | 2020-03-19 | 2024-04-15 | 株式会社レゾナック・ガスプロダクツ | 洗浄装置及び洗浄方法 |
JP7413891B2 (ja) | 2020-03-30 | 2024-01-16 | コニカミノルタ株式会社 | 残留トナーの除去方法、トナー容器のリユース方法およびトナー容器のリサイクル方法 |
JP2022036815A (ja) * | 2020-08-24 | 2022-03-08 | 株式会社御池鐵工所 | 消毒剤生成装置及び消毒剤生成方法 |
JP7000517B1 (ja) | 2020-08-24 | 2022-02-04 | 株式会社御池鐵工所 | 消毒剤生成装置及び消毒剤生成方法 |
Also Published As
Publication number | Publication date |
---|---|
JP6501191B2 (ja) | 2019-04-17 |
US10632506B2 (en) | 2020-04-28 |
CN106463387A (zh) | 2017-02-22 |
US20180161737A1 (en) | 2018-06-14 |
US20200238654A9 (en) | 2020-07-30 |
EP3144962A4 (en) | 2018-01-10 |
KR101934627B1 (ko) | 2019-03-25 |
KR20170008813A (ko) | 2017-01-24 |
EP3144962A1 (en) | 2017-03-22 |
JPWO2016088731A1 (ja) | 2017-10-05 |
CN106463387B (zh) | 2019-06-28 |
US20190329520A1 (en) | 2019-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6501191B2 (ja) | マイクロ・ナノバブルによる洗浄方法及び洗浄装置 | |
KR101819246B1 (ko) | 개선된 초음파 클리닝 유체, 방법 및 장치 | |
TW200903603A (en) | Semiconductor substrate cleaning method using bubble/chemical mixed cleaning liquid | |
KR100397455B1 (ko) | 반도체의초미립자세정기 | |
KR101790449B1 (ko) | 기판 처리 장치 및 기판 처리 방법 | |
US20060249182A1 (en) | Cleaning method and cleaning apparatus | |
JP2008080230A (ja) | 基板処理装置および基板処理方法 | |
US7837805B2 (en) | Methods for treating surfaces | |
JP2006223995A (ja) | 洗浄方法及び洗浄装置 | |
KR101271302B1 (ko) | 세정 방법 및 세정 장치 | |
JP2012236151A (ja) | マイクロ・ナノバブル発生装置とノズル構造 | |
WO2007063987A1 (ja) | 超純水プラズマ泡による加工・洗浄方法及びその装置 | |
JP6536884B2 (ja) | マイクロ・ナノバブルを利用した金属表面の改質方法及び金属と樹脂との接着方法 | |
EP3502062A1 (en) | Hydrogencarbonate water and cleaning method using same | |
CN112742227A (zh) | 含超微泡液体生产设备和含超微泡液体生产方法 | |
JP2012000580A (ja) | バブル含有液生成装置及び処理装置 | |
CN113118104A (zh) | 一种多通超声驱动控制微液滴集群清洗系统 | |
WO2010097896A1 (ja) | 洗浄用ノズル及び洗浄方法 | |
TW201343263A (zh) | 對象物洗淨系統及對象物洗淨方法 | |
CN113118132B (zh) | 一种超声驱动控制的微液滴集群清洗方法 | |
KR101987709B1 (ko) | 사류체 노즐 | |
WO2020075844A1 (ja) | 微細気泡洗浄装置及び微細気泡洗浄方法 | |
CN113118103A (zh) | 一种共混超声驱动控制微液滴集群清洗系统 | |
JP2007136444A (ja) | 液体製造装置、処理装置および表面加工装置 | |
JPS62204531A (ja) | 有機物被膜の除去方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15865774 Country of ref document: EP Kind code of ref document: A1 |
|
REEP | Request for entry into the european phase |
Ref document number: 2015865774 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 15319041 Country of ref document: US Ref document number: 2015865774 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 20167035300 Country of ref document: KR Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 2016562624 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |