WO2016056441A1 - Cible de pulvérisation en w-ti - Google Patents

Cible de pulvérisation en w-ti Download PDF

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Publication number
WO2016056441A1
WO2016056441A1 PCT/JP2015/077729 JP2015077729W WO2016056441A1 WO 2016056441 A1 WO2016056441 A1 WO 2016056441A1 JP 2015077729 W JP2015077729 W JP 2015077729W WO 2016056441 A1 WO2016056441 A1 WO 2016056441A1
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WO
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Prior art keywords
powder
concentration
mass
sputtering target
film
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PCT/JP2015/077729
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English (en)
Japanese (ja)
Inventor
野中　荘平
齋藤　淳
健志 大友
Original Assignee
三菱マテリアル株式会社
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Application filed by 三菱マテリアル株式会社 filed Critical 三菱マテリアル株式会社
Priority to KR1020167031186A priority Critical patent/KR20160133571A/ko
Priority to CN201580021546.8A priority patent/CN106460160B/zh
Publication of WO2016056441A1 publication Critical patent/WO2016056441A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/04—Alloys based on tungsten or molybdenum
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Definitions

  • the present invention relates to a W—Ti sputtering target for forming a W—Ti film as a diffusion preventing layer for preventing diffusion of mutual elements between, for example, a bump used when mounting a semiconductor element and a base electrode.
  • a W—Ti sputtering target for forming a W—Ti film as a diffusion preventing layer for preventing diffusion of mutual elements between, for example, a bump used when mounting a semiconductor element and a base electrode.
  • Au bumps, solder bumps, and the like are formed on, for example, Al electrodes and Cu electrodes.
  • Al and Au diffuse to each other to form an intermetallic compound of Al and Au, resulting in increased electrical resistance or adhesion.
  • the performance would decrease.
  • Cu electrode and the solder bump are brought into direct contact
  • Cu and Sn in the solder diffuse to each other to form an intermetallic compound of Cu and Sn, and the electrical resistance increases. There was a risk that the adhesion would be reduced.
  • a W—Ti film is formed as a diffusion preventing layer for preventing mutual element diffusion between the base electrode and the bump.
  • the W—Ti sputtering targets described in Patent Documents 1 and 2 are each manufactured by a powder sintering method.
  • Patent Document 3 discloses that by using a W—Ti sputtering target to which a small amount of Fe is added, the formed W—Ti film can contain Fe and the etching rate can be improved. .
  • Japanese Patent No. 2606946 Japanese Patent Laid-Open No. 05-295531 Japanese Patent No. 4747368
  • the etching rate is improved.
  • the Fe concentration in the W—Ti film varies, As a result, the etching rate locally changes, and uniform etching may not be performed. Therefore, a W—Ti sputtering target that can form a W—Ti film with a small variation in Fe concentration and a uniform etching rate is desired.
  • the present invention has been made in view of the above-described circumstances, and an object thereof is to provide a W—Ti sputtering target capable of forming a W—Ti film with a small variation in Fe concentration and a uniform etching rate.
  • a W—Ti sputtering target includes Ti within a range of 5 mass% to 20 mass% and Fe within a range of 25 mass ppm to 100 mass ppm.
  • W—Ti sputtering target having a composition consisting of W and the balance of inevitable impurities, the Fe concentration being measured at a plurality of locations within the target surface, and the maximum value of the measured Fe concentration being Fe max , Fe
  • the minimum value of the concentration is Fe min , (Fe max ⁇ Fe min ) / (Fe max + Fe min ) ⁇ 0.25 It is characterized by satisfying the relational expression.
  • Fe is contained in the range of 25 ppm to 100 ppm by mass, so that the etching rate of the formed W-Ti film can be increased. Can be improved. Then, the Fe concentration is measured at a plurality of locations in the target surface, and the measured maximum value of Fe concentration (Fe max ) and the minimum value of Fe concentration (Fe min ) satisfy the above relational expression, Variations in the Fe concentration in the target plane are suppressed. Therefore, it is possible to form a W—Ti film with a small variation in Fe concentration and a uniform etching rate.
  • the W-Ti sputtering target according to the present embodiment prevents diffusion between an Au bump formed on the liquid crystal driver IC and the Al pad portion (underlying electrode), for example, for bonding the liquid crystal driver IC to the COF tape. It is used when a W—Ti film is formed as a layer by sputtering.
  • the W—Ti sputtering target according to the present embodiment contains Ti in the range of 5 mass% to 20 mass%, Fe in the range of 25 mass ppm to 100 mass ppm, and the balance from W and inevitable impurities. It has the composition which becomes. Then, when the Fe concentration is measured at a plurality of locations in the target plane, the maximum value of the measured Fe concentration is Fe max , and the minimum value of the Fe concentration is Fe min , (Fe max ⁇ Fe min ) / (Fe max + Fe min ) ⁇ 0.25 And the relational expression is satisfied.
  • ⁇ Ti 5% by mass or more and 20% by mass or less>
  • the adhesion between the formed W—Ti film and the base electrode may be lowered.
  • the Ti content in the W—Ti sputtering target exceeds 20% by mass, the electrical resistance of the formed W—Ti film increases and the elements constituting the bump (in this embodiment, There is a possibility that mutual diffusion between Au) and an element constituting the base electrode (Al in this embodiment) cannot be sufficiently prevented by the formed W—Ti film.
  • the Ti content in the W—Ti sputtering target is regulated within the range of 5% by mass or more and 20% by mass or less. In addition, it is preferable to set it as 7 mass% or more, and, as for the minimum of content of Ti, it is more preferable to set it as 9 mass% or more. Further, the upper limit of the Ti content is preferably 15% by mass or less, and more preferably 13% by mass or less.
  • the Fe content in the W—Ti sputtering target is regulated within the range of 25 ppm to 100 ppm by mass.
  • the lower limit of the Fe content is preferably 30 mass ppm or more, and more preferably 35 mass ppm or more.
  • the upper limit of the Fe content is preferably 75 mass ppm or less, and more preferably 50 mass ppm or less.
  • (Fe max ⁇ Fe min ) / (Fe max + Fe min ) is preferably 0.2 or less, and more preferably 0.15 or less. Note that (Fe max -Fe min ) / (Fe max + Fe min ) is preferably as low as possible, but extremely reducing (Fe max -Fe min ) / (Fe max + Fe min ) causes an increase in cost. For this reason, (Fe max -Fe min ) / (Fe max + Fe min ) may be 0.005 or more.
  • the target surface of the W—Ti sputtering target when the target surface of the W—Ti sputtering target is circular, as shown in FIG. 2, it passes through the center (1) of the circle and the center of the circle and is orthogonal to each other.
  • the Fe concentration is measured at five points of the outer peripheral portions (2), (3), (4), and (5) on the two straight lines, and the above-mentioned maximum Fe concentration (Fe max ) and the minimum Fe concentration are measured.
  • the value (Fe min ) is obtained.
  • the outer peripheral portions (2), (3), (4), and (5) may be at a position of about 10 mm from the periphery of the target to the center side, for example. Further, when the target surface of the W—Ti sputtering target is rectangular, as shown in FIG.
  • the intersection (1) where the diagonal lines intersect and the corners (2), (3), ( 4) The Fe concentration is measured at five points (5), and the above-mentioned maximum value (Fe max ) of Fe concentration and the minimum value (Fe min ) of Fe concentration are obtained.
  • the corners (2), (3), (4), (5) may be at a position of about 10 mm from the apex to the intersection, for example.
  • the number of points where the Fe concentration is measured may be 5 or more and 20 or less. In that case, the measurement location may be a point about 10 mm from the intersection of the target center point and a straight line passing through the center and the outer periphery of the target to the center side.
  • the method for producing a W—Ti sputtering target according to the present embodiment includes a mixing and pulverizing step S01 for mixing and pulverizing the raw material powder mixed in a predetermined mixing amount, and heating the mixed and pulverized raw material powder. And a sintering step S02 for sintering and a processing step S03 for processing the obtained sintered body.
  • Ti powder, W powder and Fe powder are prepared as raw powders.
  • the W powder it is preferable to use a powder having a purity of 99.999% by mass or more and an average particle diameter of 0.5 ⁇ m or more and 20 ⁇ m or less.
  • the Fe powder it is preferable to use a powder having a purity of 99.999% by mass or more and an average particle size of 75 ⁇ m or more and 150 ⁇ m or less.
  • ⁇ Mixing and grinding step S01> These raw material powders contain Ti within a range of 5 mass% to 20 mass%, Fe within a range of 25 mass ppm to 100 mass ppm, with the balance being composed of W and inevitable impurities. While weighing, this raw material powder is mixed and pulverized. In the present embodiment, the weighed raw material powders are mixed by a ball mill, and further mixed and pulverized by an attritor device using a cemented carbide ball. By this mixing and pulverizing step S01, the Fe powder is pulverized so that the average particle diameter is 10 ⁇ m or less.
  • ⁇ Sintering step S02> the raw material powder (mixed powder) mixed and pulverized as described above is sintered in a vacuum, an inert gas atmosphere, or a reducing atmosphere.
  • the Fe powder pulverized to an average particle size of 10 ⁇ m or less is uniformly diffused in W.
  • the sintering temperature in the sintering step is preferably set according to the melting point Tm of the W—Ti alloy to be manufactured.
  • this sintering step S02 atmospheric sintering, hot pressing, or hot isostatic pressing can be applied as a sintering method.
  • the raw material powder (mixed powder) was filled in the graphite mold, and sintering was performed by vacuum hot pressing with a pressure of 10 MPa to 60 MPa and a temperature of 1000 ° C. to 1500 ° C.
  • ⁇ Processing step S03> By subjecting the sintered body obtained in the sintering step S02 to cutting or grinding, it is processed into a sputtering target having a predetermined shape.
  • the W-Ti sputtering target according to the present embodiment is manufactured through the above processes.
  • This W—Ti sputtering target is used by bonding In to a backing plate made of Cu or SUS (stainless steel) or other metal (for example, Mo) using In as a solder.
  • Fe is contained in the range of 25 ppm to 100 ppm by mass, so that the formed W—Ti film is formed.
  • the etching rate can be improved.
  • the Fe concentration is measured at a plurality of locations in the target surface, and the maximum value (Fe max ) of the measured Fe concentration and the minimum value (Fe min ) of the Fe concentration are (Fe max ⁇ Fe min ) / (Fe max + Fe min ) ⁇ 0.25 Therefore, the variation in Fe concentration in the target plane is suppressed. Therefore, it is possible to form a W—Ti film with a small variation in Fe concentration and a uniform etching rate.
  • the Ti powder, the W powder and the Fe powder are mixed and pulverized so that the particle size of the Fe powder before sintering is 10 ⁇ m or less.
  • the particle size of the Fe powder before sintering is preferably 5 ⁇ m or less, more preferably 2 ⁇ m or less, but is not limited thereto.
  • the smaller the particle size of the Fe powder before sintering the better.
  • the particle size of the Fe powder before sintering may be 0.1 ⁇ m or more.
  • Fe having an average particle diameter of 75 ⁇ m or more and 150 ⁇ m or less.
  • the powder is mixed and pulverized with other raw material powders (Ti powder, W powder) to reduce the particle size to 10 ⁇ m or less, and since the ratio of Fe powder is sufficiently low, handling becomes easy.
  • the raw powder is mixed and pulverized using an attritor device, but the present invention is not limited to this, and the raw powder may be mixed and pulverized by other methods.
  • the method for mixing and pulverizing the raw material powder include a planetary ball mill and a vibrating ball mill.
  • inevitable impurities in the W—Ti sputtering target include Na, K, Ca, Ni, Cr, and Mn. These inevitable impurities are preferably 0.01% by mass or less in total, but are not limited thereto.
  • a purity of 99.999% by mass As a raw material powder, a purity of 99.999% by mass, a Ti powder having an average particle size of 15 ⁇ m, a purity of 99.999% by mass, a W powder having an average particle size of 1 ⁇ m, a purity of 99.999% by mass, Fe powder having an average particle size of 100 ⁇ m was prepared, and Ti powder, Fe powder, and W powder were weighed so as to have the composition shown in Table 1.
  • the weighed Ti powder, Fe powder, and W powder were put into an attritor apparatus (Nippon Coke Industries, Ltd. MA1D) together with a cemented carbide ball having a diameter of about 5 mm, and the rotational speed was 300 ppm.
  • the mixed pulverization was performed for 1 hour in an Ar atmosphere under the conditions.
  • an inner paste with W foil was applied in the inside of the mixing container of this attritor.
  • the input weight of the cemented carbide ball was about 10 times the input weight of the W powder and the Fe powder.
  • the mixed and pulverized W powder, Fe powder, and Ti powder were mixed by a rolling ball mill apparatus to obtain a mixed powder.
  • the mixed powder before sintering was observed with an EPMA apparatus, Fe particles were identified by a surface analysis image of characteristic X-rays, and the particle diameter was confirmed.
  • the particle diameter is shown in Table 1. All detected Fe particles had a particle size of less than 10 ⁇ m.
  • the obtained mixed powder is filled in a graphite mold and subjected to vacuum hot pressing under conditions of pressure: 15 MPa, temperature: 1200 ° C. for 3 hours to produce a hot press sintered body, and the obtained hot press sintering is performed.
  • the body was machined to produce a W—Ti sputtering target of the present invention having a diameter of 152.4 mm and a thickness of 6 mm.
  • a purity of 99.999% by mass As a raw material powder, a purity of 99.999% by mass, a Ti powder having an average particle size of 15 ⁇ m, a purity of 99.999% by mass, a W powder having an average particle size of 1 ⁇ m, a purity of 99.999% by mass, Fe powder having an average particle size of 100 ⁇ m was prepared, and Ti powder, Fe powder, and W powder were weighed so as to have the composition shown in Table 1. The weighed Ti powder, Fe powder and W powder were mixed by a rolling ball mill device to obtain a mixed powder. That is, in the comparative example, the raw material powder was not pulverized.
  • the mixed powder before sintering was observed with an EPMA apparatus, Fe particles were identified by a surface analysis image of characteristic X-rays, and the particle diameter was confirmed.
  • the particle diameter is shown in Table 1.
  • the detected Fe particles generally had a particle diameter having a maximum value shown in Table 1.
  • the obtained mixed powder was filled in a graphite mold and subjected to vacuum hot pressing under the conditions of pressure: 15 MPa, temperature: 1200 ° C. and 3 hours to prepare a hot press sintered body.
  • the obtained hot press sintered body was machined to produce a comparative W—Ti sputtering target having a diameter of 152.4 mm and a thickness of 6 mm.
  • Substrate 100 mm diameter Si substrate ultimate vacuum: ⁇ 5 ⁇ 10 ⁇ 5 Pa Distance between substrate and target: 70mm Power: DC 600W Gas pressure: Ar 1.0Pa No substrate heating Thickness: 300nm
  • Comparative Example 1-6 As shown in Table 2, it was confirmed that the variation of the Fe concentration in the target surface was large. It is presumed that the variation in the Fe concentration in the target plane increased because sintering was performed using Fe particles having a large particle size without pulverizing the raw material powder. In particular, in Comparative Examples 2 and 5 having a low Fe concentration, the Fe concentration locally decreased, and the maximum difference in Fe concentration also increased.
  • the W—Ti sputtering target of the present invention it is possible to form a W—Ti film having a small variation in Fe concentration and a uniform etching rate.
  • the W—Ti sputtering target of the present invention forms, for example, a W—Ti film as a diffusion preventing layer for preventing diffusion of mutual elements between a bump and a base electrode used when mounting a semiconductor element. It is suitable for.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)

Abstract

　La cible de pulvérisation en W-Ti d'après la présente invention a une composition contenant de 5 à 20 % en masse de Ti et de 25 à 100 ppm en masse de Fe, le reste contenant du W et les inévitables impuretés. Ladite cible satisfait l'expression relationnelle (Femax – Femin)/(Femax + Femin) ≤ 0,25, où Femax est la valeur maximale de la concentration en Fe et Femin est la valeur minimale de la concentration en Fe lorsque la concentration en Fe est mesurée en une pluralité d'emplacements dans le plan de la cible.
PCT/JP2015/077729 2014-10-08 2015-09-30 Cible de pulvérisation en w-ti WO2016056441A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020167031186A KR20160133571A (ko) 2014-10-08 2015-09-30 W-Ti 스퍼터링 타깃
CN201580021546.8A CN106460160B (zh) 2014-10-08 2015-09-30 W-Ti溅射靶

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014207343A JP5999161B2 (ja) 2014-10-08 2014-10-08 Ｗ−Ｔｉスパッタリングターゲット
JP2014-207343 2014-10-08

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JP (1) JP5999161B2 (fr)
KR (1) KR20160133571A (fr)
CN (1) CN106460160B (fr)
TW (1) TWI572722B (fr)
WO (1) WO2016056441A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020095595A1 (fr) * 2018-11-06 2020-05-14 三菱マテリアル株式会社 Cible de pulvérisation cathodique à base de tungstène-titane

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111155061A (zh) * 2018-11-07 2020-05-15 宁波江丰电子材料股份有限公司 WTi合金靶材的制备方法
CN112111713B (zh) * 2020-09-11 2022-09-30 宁波江丰电子材料股份有限公司 一种WTi合金溅射靶材的制备方法

Citations (5)

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Publication number Priority date Publication date Assignee Title
JPH03264640A (ja) * 1990-03-13 1991-11-25 Hitachi Metals Ltd Ｔｉ‐Ｗターゲット材およびその製造方法
JPH05295531A (ja) * 1992-04-21 1993-11-09 Toshiba Corp Ｔｉ−Ｗ系スパッタリングターゲットおよびその製造方法
JP2008218693A (ja) * 2007-03-05 2008-09-18 Mitsubishi Materials Corp エッチングレートの高いＷ−Ｔｉ拡散防止膜およびそのＷ−Ｔｉ拡散防止膜を形成するためのスパッタリング用Ｗ−Ｔｉターゲット
WO2013175884A1 (fr) * 2012-05-22 2013-11-28 Jx日鉱日石金属株式会社 CIBLE DE PULVÉRISATION CATHODIQUE À BASE DE Fe-Pt-Ag-C AYANT DES PARTICULES DE C DISPERSÉES EN SON SEIN, ET SON PROCÉDÉ DE FABRICATION
WO2014148588A1 (fr) * 2013-03-22 2014-09-25 Jx日鉱日石金属株式会社 Cible de pulvérisation à corps de tungstène fritté et son procédé de fabrication

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5156591B2 (ja) * 2008-11-17 2013-03-06 出光興産株式会社 有機エレクトロルミネッセンス素子
JP2011058078A (ja) * 2009-09-14 2011-03-24 Toshiba Corp スパッタリングターゲットとそれを用いたＴａ−Ｗ合金膜および液晶表示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03264640A (ja) * 1990-03-13 1991-11-25 Hitachi Metals Ltd Ｔｉ‐Ｗターゲット材およびその製造方法
JPH05295531A (ja) * 1992-04-21 1993-11-09 Toshiba Corp Ｔｉ−Ｗ系スパッタリングターゲットおよびその製造方法
JP2008218693A (ja) * 2007-03-05 2008-09-18 Mitsubishi Materials Corp エッチングレートの高いＷ−Ｔｉ拡散防止膜およびそのＷ−Ｔｉ拡散防止膜を形成するためのスパッタリング用Ｗ−Ｔｉターゲット
WO2013175884A1 (fr) * 2012-05-22 2013-11-28 Jx日鉱日石金属株式会社 CIBLE DE PULVÉRISATION CATHODIQUE À BASE DE Fe-Pt-Ag-C AYANT DES PARTICULES DE C DISPERSÉES EN SON SEIN, ET SON PROCÉDÉ DE FABRICATION
WO2014148588A1 (fr) * 2013-03-22 2014-09-25 Jx日鉱日石金属株式会社 Cible de pulvérisation à corps de tungstène fritté et son procédé de fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020095595A1 (fr) * 2018-11-06 2020-05-14 三菱マテリアル株式会社 Cible de pulvérisation cathodique à base de tungstène-titane

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KR20160133571A (ko) 2016-11-22
JP2016074962A (ja) 2016-05-12
CN106460160A (zh) 2017-02-22
TWI572722B (zh) 2017-03-01
JP5999161B2 (ja) 2016-09-28
TW201619405A (zh) 2016-06-01
CN106460160B (zh) 2018-08-17

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