CN106460160B - W-Ti溅射靶 - Google Patents
W-Ti溅射靶 Download PDFInfo
- Publication number
- CN106460160B CN106460160B CN201580021546.8A CN201580021546A CN106460160B CN 106460160 B CN106460160 B CN 106460160B CN 201580021546 A CN201580021546 A CN 201580021546A CN 106460160 B CN106460160 B CN 106460160B
- Authority
- CN
- China
- Prior art keywords
- concentration
- powder
- mass
- sputtering targets
- max
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/12—Both compacting and sintering
- B22F3/14—Both compacting and sintering simultaneously
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Powder Metallurgy (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014-207343 | 2014-10-08 | ||
JP2014207343A JP5999161B2 (ja) | 2014-10-08 | 2014-10-08 | W−Tiスパッタリングターゲット |
PCT/JP2015/077729 WO2016056441A1 (fr) | 2014-10-08 | 2015-09-30 | Cible de pulvérisation en w-ti |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106460160A CN106460160A (zh) | 2017-02-22 |
CN106460160B true CN106460160B (zh) | 2018-08-17 |
Family
ID=55653056
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201580021546.8A Active CN106460160B (zh) | 2014-10-08 | 2015-09-30 | W-Ti溅射靶 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5999161B2 (fr) |
KR (1) | KR20160133571A (fr) |
CN (1) | CN106460160B (fr) |
TW (1) | TWI572722B (fr) |
WO (1) | WO2016056441A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6743867B2 (ja) * | 2018-11-06 | 2020-08-19 | 三菱マテリアル株式会社 | W−Tiスパッタリングターゲット |
CN111155061A (zh) * | 2018-11-07 | 2020-05-15 | 宁波江丰电子材料股份有限公司 | WTi合金靶材的制备方法 |
CN112111713B (zh) * | 2020-09-11 | 2022-09-30 | 宁波江丰电子材料股份有限公司 | 一种WTi合金溅射靶材的制备方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2606946B2 (ja) * | 1990-03-13 | 1997-05-07 | 日立金属株式会社 | Ti‐Wターゲット材およびその製造方法 |
JPH05295531A (ja) * | 1992-04-21 | 1993-11-09 | Toshiba Corp | Ti−W系スパッタリングターゲットおよびその製造方法 |
JP4747368B2 (ja) * | 2007-03-05 | 2011-08-17 | 三菱マテリアル株式会社 | W−Ti拡散防止膜を形成するためのスパッタリング用W−Tiターゲット |
JP5156591B2 (ja) * | 2008-11-17 | 2013-03-06 | 出光興産株式会社 | 有機エレクトロルミネッセンス素子 |
JP2011058078A (ja) * | 2009-09-14 | 2011-03-24 | Toshiba Corp | スパッタリングターゲットとそれを用いたTa−W合金膜および液晶表示装置 |
US20140360871A1 (en) * | 2012-05-22 | 2014-12-11 | Jx Nippon Mining & Metals Corporation | Fe-Pt-Ag-C-Based Sputtering Target Having C Grains Dispersed Therein, and Method for Producing Same |
WO2014148588A1 (fr) * | 2013-03-22 | 2014-09-25 | Jx日鉱日石金属株式会社 | Cible de pulvérisation à corps de tungstène fritté et son procédé de fabrication |
-
2014
- 2014-10-08 JP JP2014207343A patent/JP5999161B2/ja active Active
-
2015
- 2015-09-30 KR KR1020167031186A patent/KR20160133571A/ko not_active Application Discontinuation
- 2015-09-30 CN CN201580021546.8A patent/CN106460160B/zh active Active
- 2015-09-30 WO PCT/JP2015/077729 patent/WO2016056441A1/fr active Application Filing
- 2015-10-02 TW TW104132567A patent/TWI572722B/zh active
Also Published As
Publication number | Publication date |
---|---|
JP2016074962A (ja) | 2016-05-12 |
JP5999161B2 (ja) | 2016-09-28 |
KR20160133571A (ko) | 2016-11-22 |
TWI572722B (zh) | 2017-03-01 |
TW201619405A (zh) | 2016-06-01 |
CN106460160A (zh) | 2017-02-22 |
WO2016056441A1 (fr) | 2016-04-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5933887B2 (ja) | タッチスクリーン | |
TWI245076B (en) | Tungsten spattering target and method of manufacturing the target | |
CN106460160B (zh) | W-Ti溅射靶 | |
JP7040561B2 (ja) | 窒化ガリウム系焼結体及びその製造方法 | |
JP6883103B2 (ja) | カルコゲナイドスパッタリングターゲット及びその製造方法 | |
CN105637114B (zh) | 溅射靶及溅射靶的制造方法 | |
TW201538431A (zh) | 氧化物燒結體及濺鍍靶、與該氧化物燒結體之製造方法 | |
KR20200135436A (ko) | 텅스텐 실리사이드 타깃 및 그 제조 방법, 그리고 텅스텐 실리사이드막의 제조 방법 | |
KR20210049815A (ko) | 스퍼터링 타깃 및 스퍼터링 타깃의 제조 방법 | |
TWI715466B (zh) | 鉬合金靶材及其製造方法 | |
TWI727460B (zh) | W-Ti濺鍍靶 | |
JP6459058B2 (ja) | Mo合金ターゲット | |
TWI518185B (zh) | 碳化物/結合金屬之複合粉體 | |
TWI674325B (zh) | MoNb靶材 | |
JP2021127494A (ja) | Cr−Al合金スパッタリングターゲット | |
TWI715467B (zh) | 鉬合金靶材及其製造方法 | |
JP2019002064A (ja) | MoWターゲット材 | |
KR20220032523A (ko) | 니켈 합금 스퍼터링 타겟 | |
JP2019173055A (ja) | Mo系ターゲットおよびその製造方法 | |
KR20170046723A (ko) | 텅스텐 스퍼터링 타깃 및 그 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |