WO2016051473A1 - 演算増幅回路 - Google Patents

演算増幅回路 Download PDF

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Publication number
WO2016051473A1
WO2016051473A1 PCT/JP2014/075939 JP2014075939W WO2016051473A1 WO 2016051473 A1 WO2016051473 A1 WO 2016051473A1 JP 2014075939 W JP2014075939 W JP 2014075939W WO 2016051473 A1 WO2016051473 A1 WO 2016051473A1
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Prior art keywords
node
well
nmosfet
operational amplifier
pmosfet
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PCT/JP2014/075939
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English (en)
French (fr)
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貴之 中井
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三菱電機株式会社
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Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to DE112014007000.9T priority Critical patent/DE112014007000B4/de
Priority to JP2016551360A priority patent/JP6320546B2/ja
Priority to US15/329,433 priority patent/US9953980B2/en
Priority to PCT/JP2014/075939 priority patent/WO2016051473A1/ja
Publication of WO2016051473A1 publication Critical patent/WO2016051473A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0925—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising an N-well only in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/301—CMOS common drain output SEPP amplifiers
    • H03F3/3011—CMOS common drain output SEPP amplifiers with asymmetrical driving of the end stage
    • H03F3/3013—CMOS common drain output SEPP amplifiers with asymmetrical driving of the end stage using a common drain driving stage, i.e. follower stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/301—CMOS common drain output SEPP amplifiers
    • H03F3/3016—CMOS common drain output SEPP amplifiers with symmetrical driving of the end stage
    • H03F3/3018—CMOS common drain output SEPP amplifiers with symmetrical driving of the end stage using opamps as driving stages
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45224—Complementary Pl types having parallel inputs and being supplied in parallel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823892—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the wells or tubs, e.g. twin tubs, high energy well implants, buried implanted layers for lateral isolation [BILLI]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/30—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor
    • H03F2203/30006—Indexing scheme relating to single-ended push-pull [SEPP]; Phase-splitters therefor the push and the pull stages of the SEPP amplifier are both current mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45006—Indexing scheme relating to differential amplifiers the addition of two signals being made by two emitter or source coupled followers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45281—One SEPP output stage being added to the differential amplifier

Definitions

  • the present invention relates to an operational amplifier circuit, and more particularly to an operational amplifier circuit having a class AB push-pull type source follower circuit as an output amplifier stage.
  • Non-Patent Document 1 A technology for operating the output amplifier stage of the operational amplifier circuit as a class AB as a technology that makes it possible to suppress the current consumption in the bias state of the operational amplifier circuit and increase the maximum output current when driving the load.
  • An operational amplifier circuit having a class AB output there is an operational amplifier circuit using a push-pull type source follower circuit.
  • a conventional operational amplifier circuit using a push-pull type source follower circuit has a problem that a range of an output voltage is narrowed and a problem that a frequency characteristic is deteriorated.
  • CMOS Analog Circuit Design Second Edition p. 224, P.I. E. Allen, D.C. R. Holberg, Oxford
  • An object of the present invention is to provide an operational amplifier circuit that suppresses deterioration of frequency characteristics and suppresses a narrowing of an output voltage range.
  • the operational amplifier circuit includes an output amplifier stage that amplifies the first voltage of the differential amplifier stage that outputs the first voltage and outputs the amplified voltage from the output terminal.
  • the output amplification stage includes: A first nMOSFET having a first p-well formed, a shorted gate and drain connected to a first node, and a source connected to a second node; A second nMOSFET having a second p-well formed, a gate connected to the first node, a drain connected to a first reference terminal, and a source connected to the output terminal; A first pMOSFET having a first n-well formed, a shorted gate and drain connected to a third node, and a source connected to the second node; A second n-well is formed, a second pMOSFET having a gate connected to the third node, a drain connected to a second reference terminal, and a source connected to the output terminal.
  • the first p well and the second p well are: Connected to the fourth node,
  • the first n well and the second n well are: Connected to the fifth node, At least one of the fourth node and the fifth node is: Connected to the output terminal.
  • FIG. 3 is a diagram of the operational amplifier circuit 200 in the first embodiment.
  • FIG. FIG. 3 is a diagram of the operational amplifier circuit 210 in the first embodiment.
  • FIG. 3 is a diagram of the first embodiment, and is a circuit diagram of an operational amplifier circuit 200-1.
  • FIG. 3 is a diagram of the first embodiment, and is a basic circuit diagram including a configuration of an output amplification stage 202-1.
  • FIG. 3 is a diagram of the first embodiment and shows an example of the layout shape of the first pMOSFET 107 and the second pMOSFET 108 of the operational amplifier circuit 200-1.
  • FIG. 8 is a diagram of the first embodiment and shows another example of the layout shape of the first pMOSFET 107 and the second pMOSFET 108 of the operational amplifier circuit 200-1.
  • FIG. 5 is a diagram of the first embodiment and shows an example of a layout shape of the first nMOSFET 109 and the second nMOSFET 110 of the operational amplifier circuit 200-1.
  • FIG. 10 is a diagram of the first embodiment and shows another example of the layout shape of the first nMOSFET 109 and the second nMOSFET 110 of the operational amplifier circuit 200-1.
  • FIG. 3 is a diagram of Embodiment 1, and is a circuit diagram of an operational amplifier circuit 200-2.
  • Embodiment 1 the operational amplifier circuit 200 and the operational amplifier circuit 200-1 will be described.
  • the voltage is expressed as a voltage ⁇ VOUT>
  • the terminal is expressed as a terminal VOUT.
  • the voltage ⁇ VOUT> means the voltage at the terminal VOUT.
  • the terminal voltage has the same meaning as the terminal potential.
  • FIG. 1 shows a circuit configuration of an operational amplifier circuit 200 having a push-pull type source follower circuit, which is a premise of the operational amplifier circuit 200-1 of the first embodiment.
  • the push-pull type source follower circuit corresponds to the range 202A of the output amplification stage 202 of FIG.
  • the operational amplifier circuit 200 includes a differential input terminal VIP that is a non-inverting input terminal, a differential input terminal VIM that is an inverting input terminal, a bias input terminal VBIAS, and an output terminal VOUT.
  • the operational amplifier circuit 200 includes a differential amplifier stage 201 and an output amplifier stage 202.
  • the differential amplifier stage 201 amplifies the potential difference between the differential input terminal VIP and the differential input terminal VIM, and outputs a first voltage ⁇ VA>.
  • the output amplification stage 202 amplifies the first voltage ⁇ VA> output from the differential amplification stage 201, and outputs the amplified voltage from the output terminal VOUT as an output voltage ⁇ VOUT> that is a second voltage.
  • the differential amplification stage 201 includes an nMOSFET 100, a differential pair 211, and an active load 221.
  • the nMOSFET 100 receives a bias voltage input from the bias input terminal VBIAS at its gate and generates a bias current.
  • the differential pair 211 includes an nMOSFET 101 and an nMOSFET 102.
  • the active load 221 includes a pMOSFET 103 and a pMOSFET 104.
  • the output amplification stage 202 includes a first nMOSFET 109, a second nMOSFET 110, a first pMOSFET 107, a second pMOSFET 108, a third nMOSFET 105, and a third pMOSFET 106.
  • the sources of the second nMOSFET 110 and the second pMOSFET 108 are connected to the output terminal VOUT.
  • the first nMOSFET 109 is a replica of the second nMOSFET 110.
  • the first pMOSFET 107 is a replica of the second pMOSFET 108.
  • the third pMOSFET 106 receives and amplifies the first voltage ⁇ VA> output from the differential amplification stage 201 at the gate.
  • the third nMOSFET 105 receives a bias voltage input from the bias input terminal VBIAS at its gate and generates a bias current.
  • the gate terminal VGN of the first nMOSFET 109 is connected to the drain of the first nMOSFET 109 and the drain of the third pMOSFET 106.
  • the gate terminal VGP of the first pMOSFET 107 is connected to the drain of the first pMOSFET 107 and the drain of the third nMOSFET 105.
  • the sources of the first nMOSFET 109 and the first pMOSFET 107 are connected to each other.
  • the second nMOSFET 110 and the second pMOSFET 108 have a source connected to the output terminal VOUT, a gate connected to the gate terminal VGN and the gate terminal VGP, and a drain connected to the power supply terminal VDD and the ground terminal VSS, respectively.
  • the well potentials of the first nMOSFET 109 and the second nMOSFET 110 are supplied from the ground terminal VSS.
  • the well potentials of the first pMOSFET 107 and the second pMOSFET 108 are supplied from the power supply terminal VDD.
  • the gate widths of the first pMOSFET 107, the second pMOSFET 108, the first nMOSFET 109, and the second nMOSFET 110 are W107, W108, W109, and W110, respectively, and the gate lengths are L107, L108, L109, and L110, respectively.
  • the current flowing through the second nMOSFET 110 and the second pMOSFET 108 in the bias state is N times the current flowing through the first nMOSFET 109 and the first pMOSFET 107.
  • the well potentials of the first pMOSFET 107 and the second pMOSFET 108 of the output amplification stage 202 are connected to the power supply terminal VDD, and the well potentials of the first nMOSFET 109 and the second nMOSFET 110 are the ground potential. It is connected to the ground terminal VSS.
  • the source potential of the first pMOSFET 107, the second pMOSFET 108, the first nMOSFET 109, and the second nMOSFET 110 is a value between the ground potential and the power supply potential.
  • the pn junction between the source and well of the first pMOSFET 107, the second pMOSFET 108, the first nMOSFET 109, and the second nMOSFET 110 is biased in the reverse direction, so that the source-well voltage is so-called zero.
  • the absolute value of the threshold voltage increases due to the substrate bias effect as compared to the bias.
  • FIG. 2 is a circuit diagram of the operational amplifier circuit 210.
  • the arithmetic circuit 210 is different from the output amplification stage 202 of FIG.
  • the source and well of the first pMOSFET 107, the second pMOSFET 108, the first nMOSFET 109, and the second nMOSFET 110 are connected as in the output amplification stage 203 shown in FIG. It is effective to make the potential difference between the source and the well zero.
  • the parasitic characteristics of the pn junction portion of the well bottom surface and the outer peripheral portion are connected to the source terminal, so that the frequency characteristics are deteriorated.
  • an increase in the parasitic capacitance of the source terminals of the first pMOSFET 107 and the first nMOSFET 109 becomes a cause of deterioration of the frequency characteristics of the output amplification stage 202.
  • FIG. 3 shows an example of the operational amplifier circuit 200-1 that suppresses the narrowing of the output voltage range that occurs in the operational amplifier circuit 200 of FIG. 1 and that suppresses the deterioration of the frequency characteristics that occurs in the operational amplifier circuit 210 of FIG. The configuration is shown.
  • FIG. 3 is a circuit diagram of the operational amplifier circuit 200-1.
  • the operational amplifier circuit 200-1 amplifies the first voltage ⁇ VA> of the differential amplifier stage 201 that outputs the first voltage ⁇ VA>, and outputs the amplified voltage from the output terminal VOUT as the second voltage.
  • the output amplification stage 202-1 is provided.
  • the push-pull type source follower circuit corresponds to the range 202A-1 of the output amplifier stage 202-1.
  • the operational amplifier circuit 200-1 is different in the configuration of the output amplifier stage 202-1 from the operational amplifier circuit 200 of FIG.
  • the connection state of the well which is a feature of the output amplification stage 202-1, is indicated by a thick line.
  • the output amplification stage 202-1 is characterized in that the n wells of the first pMOSFET 107 and the second pMOSFET 108 are connected to the output terminal VOUT, and the p wells of the first nMOSFET 109 and the second nMOSFET 110 are connected to the output terminal VOUT.
  • An electric potential is supplied to the n well and the p well.
  • the output amplification stage 202-1 shown in FIG. 3 is one specific example, and FIG. 4 shows a basic circuit configuration including the configuration of the output amplification stage 202-1 of FIG.
  • FIG. 4 shows a basic circuit configuration including the configuration of the output amplification stage 202-1.
  • FIG. 4 is a diagram showing a well potential supply method. The configuration of the output amplification stage 202-1 will be described with reference to FIG.
  • the first pMOSFET 107, the second pMOSFET 108, the first nMOSFET 109, the second nMOSFET 110, the third nMOSFET 105, and the third pMOSFET 106 are indicated by solid lines, and the wirings are indicated by broken lines.
  • the output amplification stage 202-1 shown in FIG. 4 includes a first pMOSFET 107, a second pMOSFET 108, a first nMOSFET 109, a second nMOSFET 110, a third nMOSFET 105, and a third pMOSFET 106. I have.
  • a first p-well PW1 is formed in the first nMOSFET 109.
  • the first nMOSFET 109 has a short-circuited gate and drain connected to the first node N (1) and a source connected to the second node N (2).
  • the first node N (1) corresponds to the gate terminal VGN of the first nMOSFET 109
  • the second node N (2) corresponds to the source terminal of the first nMOSFET 109, for example.
  • a second p-well PW2 is formed in the second nMOSFET 110.
  • the second nMOSFET 110 has a gate connected to the first node N (1), a drain connected to the first reference terminal 231 and a source connected to the output terminal VOUT.
  • the first reference terminal 231 corresponds to the power supply terminal VDD.
  • the first n-type well NW1 is formed in the first pMOSFET 107.
  • the shorted gate and drain are connected to the third node N (3), and the source is connected to the second node N (2).
  • the third node N (3) corresponds to the gate terminal VGP of the first pMOSFET 107.
  • the second pMOSFET 108 the second n-well NW2 is formed.
  • the second pMOSFET 108 has a gate connected to the third node N (3), a drain connected to the second reference terminal 232, and a source connected to the output terminal VOUT.
  • the second reference terminal 232 corresponds to the ground terminal VSS.
  • the fourth node N (4) and the fifth node N (5) correspond to the output terminal VOUT.
  • the first p well PW1 and the second p well PW2 are connected to the fourth node N (4), and the first n well NW1 and the second n well NW2 Connected to node N (5).
  • At least one of the fourth node N (4) and the fifth node N (5) is connected to the output terminal VOUT. That is, in the case of FIG.
  • the fourth node N (4) and the fifth node N (5) are connected to the output terminal VOUT, but this connection is an example, and the fourth node N (4 ) And the fifth node N (5) may be connected to the output terminal VOUT.
  • the fifth node N (5) may be connected to the power supply terminal VDD as shown in FIG.
  • the fourth node N (4) may be connected to the ground terminal VSS as shown in FIG. (7)
  • the third pMOSFET 106 has a gate connected to the sixth node N (6), a drain connected to the first node N (1), and a source connected to the first reference terminal 231.
  • the sixth node N (6) corresponds to, for example, the drain terminal of the pMOOSFET 103.
  • the third nMOSFET 105 has a gate connected to the seventh node N (7), a drain connected to the third node N (3), and a source connected to the second reference terminal 232.
  • the seventh node N (7) corresponds to the bias input terminal VBIAS.
  • One of the sixth node N (6) and the seventh node N (7) is supplied with the first voltage ⁇ VA>, and the sixth node N (6), The other of the node N (7) is supplied with a bias voltage ⁇ VBIAS>.
  • the first voltage ⁇ VA> is supplied to the sixth node N (6) and the bias voltage ⁇ VBIAS> is supplied to the seventh node N (7), but this supply is an example.
  • the bias voltage ⁇ VBIAS> may be supplied to the sixth node N (6), and the first voltage ⁇ VA> may be supplied to the seventh node N (7). This configuration will be described later with reference to FIG.
  • Equation (2) holds for the gate width and gate length of each of the first pMOSFET 107, the second pMOSFET 108, the first nMOSFET 109, and the second nMOSFET 110 in the operational amplifier circuit 200-1 shown in FIG. Expressions (3) and (4) hold.
  • ⁇ VGS107> to ⁇ VGS110> are gate-source voltages of the first pMOSFET 107, the second pMOSFET 108, the first nMOSFET 109, and the second nMOSFET 110, respectively. If the potential of the node to which the source of the first pMOSFET 107 that is a replica and the first nMOSFET 109 that is a replica is connected is ⁇ VS>, Expression (5) is established from Expression (3) and Expression (4).
  • ⁇ VOUT> is the voltage of the output terminal VOUT.
  • ⁇ VS> ⁇ VOUT> Formula (5) That is, the source potentials of the first pMOSFET 107, the second pMOSFET 108, the first nMOSFET 109, and the second nMOSFET 110 are all equal to the voltage of the output terminal VOUT.
  • the parasitic capacitances existing at the well bottom surface and the outer pn junction of the first pMOSFET 107 and the first n109 are not connected to the source terminals of the first pMOSFET 107 and the first nMOSFET 109.
  • Good frequency characteristics can be obtained. That is, according to the configuration of the operational amplifier circuit 200-1 shown in FIG. 3, in the output amplifier stage 202-1, the n-well of the first pMOSFET 107 and the p-well of the first nMOSFET 109 are connected to the output terminal VOUT. In this configuration, no parasitic capacitance is connected to the source terminals of one pMOSFET 107 and the first nMOSFET 109.
  • the threshold voltage is lowered by reducing the source-well voltage of the first pMOSFET 107, the second pMOSFET 108, the first nMOSFET 109, and the second nMOSFET 110 without deteriorating the frequency characteristics. It is possible to widen the output voltage range.
  • FIG. 5 shows a configuration method of the well layout of the first pMOSFET 107 and the second pMOSFET 108.
  • the first n well NW 1 and the second n well NW 2 formed on the p-type substrate are separated from each other and connected to the fifth node N (5) by the wiring layer 240. .
  • the fifth node N (5) is connected to the output terminal VOUT.
  • the first pMOSFET 107 and the second pMOSFET 108 are formed on the first n-well NW1 and the second n-well NW2 that are electrically isolated from each other.
  • a second pMOSFET 108 can be realized.
  • the potentials of the first n well NW1 and the second n well NW2 are determined by connecting both the first n well NW1 and the second n well NW2 to the output terminal VOUT using the wiring layer 240. , Supplied from the output terminal VOUT.
  • FIG. 6 shows a configuration method in which n-wells are unified.
  • the first n well NW1 and the second n well NW2 shown in FIG. 5 are formed as a single region by a single n well NW, Connected to node N (5).
  • the fifth node N (5) is connected to the output terminal VOUT.
  • the first pMOSFET 107 and the second pMOSFET 108 are formed on a single n-well NW, and the potential of the well is set to a single n-well NW at the output terminal VOUT using the wiring layer 240. It may be configured to be connected and supplied from the output terminal VOUT.
  • nMOSFET can be realized by forming an n-type buried layer or an epitaxial layer and forming a p-well electrically isolated from the p-type substrate thereon. Therefore, n and p may be replaced with p and n in the descriptions of n and p in FIGS. 5 and 6 and the descriptions of n and p in the description regarding FIGS. 5 and 6.
  • FIG. 7 is a diagram showing a configuration method of the well layout of the first nMOSFET 109 and the second nMOSFET 110, and corresponds to FIG.
  • FIG. 3 is a diagram in which n and p are replaced with p and n.
  • the first p well PW1 and the second p well PW2 are separated from each other by a third n well NW3, and the first p well PW1 and the second p well PW2 are separated from each other. Is separated from the p-type substrate by the third n-well NW3.
  • the first p well PW1 and the second p well PW2 are connected to the fourth node N (4) by the wiring layer 240. Note that the fourth node N (4) is connected to the output terminal VOUT.
  • FIG. 8 is a diagram showing a case where the first nMOSFET 109 and the second nMOSFET 110 are formed on a single p-well PW with respect to the layout method of the wells of the first nMOSFET 109 and the second nMOSFET 110.
  • the first p well PW1 and the second p well PW2 shown in FIG. 7 are formed as a single region by a single p well PW.
  • the single p-well PW is separated from the p-type substrate by the third p-well PW3.
  • the single p-well PW is connected to the fourth node N (4) by the wiring layer 240.
  • the fourth node N (4) is connected to the output terminal VOUT.
  • the potential may be supplied from the output terminal VOUT to only one of the nMOSFET and pMOSFET wells. This configuration is as described in the description of FIG.
  • one set of the first nMOSFET 109 and the second nMOSFET 110 which are nMOSFETs and the first pMOSFET 107 and the second pMOSFET 108 which are pMOSFETs is replaced with a bipolar transistor, and the other set is output to the well of the MOSFET.
  • a potential may be supplied from the terminal VOUT.
  • the operational amplifier circuit 200-1 uses an nMOSFET for the differential pair 211 of the differential amplifier stage 201
  • the third pMOSFET 106 of the output amplifier stage 202-1 is an amplifier MOSFET
  • the third nMOSFET 105 is a current source MOSFET. It was. That is, in FIG. 3, the differential amplifier stage 201 includes a differential pair 211 having two nMOSFETs. However, it is not limited to this configuration.
  • FIG. 9 is a circuit diagram of the operational amplifier circuit 200-2. That is, as in the operational amplifier circuit 200-2 shown in FIG. 9, the differential amplifier stage 201-1 includes a differential pair 211-1 having two pMOSFETs.
  • the polarity of the MOSFET of the differential amplification stage 201-1 is opposite to that of the differential amplification stage 201 of FIG.
  • the differential amplifier stage 201-1 has a configuration in which the nMOSFET of the differential amplifier stage 201 in FIG. 3 is replaced with a pMOSFET, the pMOSFET is replaced with an nMOSFET, and the top and bottom are inverted.
  • the configuration in which the top and bottom are inverted is a configuration in which the connection is turned upside down with respect to the power supply terminal VDD and the ground terminal VSS.
  • the gate of the third nMOSFET 105 may receive the output voltage ⁇ VA>
  • the gate of the third pMOSFET 106 may receive the bias voltage ⁇ VBIAS>.
  • N (1) first node, N (2) second node, N (3) third node, N (4) fourth node, N (5) fifth node, N (6) th 6 nodes, N (7), 7th node, NW1 1st n-well, NW2 2nd n-well, PW1 1st p-well, PW2 2nd p-well, VBIAS bias input terminal, VIP, VIM difference Input terminal, VOUT output terminal, VGP gate terminal, VGN gate terminal, VDD power supply terminal, VSS ground terminal, ⁇ VS> first output voltage, 200, 200-1, 200-2, 210 operational amplifier circuit, 201, 201-1 differential amplification stage, 202, 202-1, 203 output amplification stage, 211, 211-1, differential pair, 221, 221-1 active load, 231 first reference terminal, 232 second Reference terminal, 240 wiring layer, 100, 101, 102 nMOSFET, 103, 104 nMOSFET, 105 third nMOSFET, 106 third pMOSF

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Abstract

　演算増幅回路（２００－１）の出力増幅段（２０２－１）では、第１のｎＭＯＳＦＥＴ（１０９）の第１のｐウェル（ＰＷ１）と、第２のｎＭＯＳＦＥＴ（１１０）の第２のｐウェル（ＰＷ２）とは、第４のノード（Ｎ（４））に接続される。また、第１のｐＭＯＳＦＥＴ（１０７）の第１のｎウェル（ＮＷ１）と、第２のｐＭＯＳＦＥＴ（１０８）の第２のｎウェル（ＮＷ２）とは、第５のノード（Ｎ（５））に接続される。第４のノード（Ｎ（４））と、第５のノード（Ｎ（５））とのうち少なくとも一方は、出力端子ＶＯＵＴに接続される。

Description

演算増幅回路
　本発明は、演算増幅回路に関し、特にＡＢ級プッシュプル型ソースフォロワ回路を出力増幅段として有する演算増幅回路に関する。
　演算増幅回路の、バイアス状態における消費電流を抑制し、かつ負荷を駆動する際の最大出力電流を大きくすることを可能にする技術として、演算増幅回路の出力増幅段をＡＢ級動作させる技術が実用に供されてきた（例えば非特許文献１）。ＡＢ級出力を有する演算増幅回路として、プッシュプル型ソースフォロワ回路を用いる演算増幅回路がある。従来のプッシュプル型ソースフォロワ回路を用いる演算増幅回路は、出力電圧の範囲が狭くなるという課題や、周波数特性の劣化があるという課題があった。
"ＣＭＯＳ　Ａｎａｌｏｇ　Ｃｉｒｃｕｉｔ　Ｄｅｓｉｇｎ　Ｓｅｃｏｎｄ　Ｅｄｉｔｉｏｎ"，ｐ．２２４，Ｐ．Ｅ．Ａｌｌｅｎ，Ｄ．Ｒ．Ｈｏｌｂｅｒｇ，Ｏｘｆｏｒｄ
　本発明は、周波数特性の劣化を抑制し、また、出力電圧の範囲が狭くなることを抑制する演算増幅回路の提供を目的とする。
　本発明の演算増幅回路は、第１の電圧を出力する差動増幅段の前記第１の電圧を増幅し、出力端子から増幅された電圧を出力する出力増幅段を備える。
　ここで、前記出力増幅段は、
　第１のｐウェルが形成され、短絡されたゲートとドレインとが第１のノードに接続され、ソースが第２のノードに接続された第１のｎＭＯＳＦＥＴと、
　第２のｐウェルが形成され、ゲートが前記第１のノードに接続され、ドレインが第１の基準端子に接続され、ソースが前記出力端子に接続された第２のｎＭＯＳＦＥＴと、
　第１のｎウェルが形成され、短絡されたゲートとドレインとが第３のノードに接続され、ソースが前記第２のノードに接続された第１のｐＭＯＳＦＥＴと、
　第２のｎウェルが形成され、ゲートが前記第３のノードに接続され、ドレインが第２の基準端子に接続され、ソースが前記出力端子に接続された第２のｐＭＯＳＦＥＴと
を備える。
　前記第１のｐウェルと前記第２のｐウェルとは、
　第４のノードに接続され、
　前記第１のｎウェルと前記第２のｎウェルとは、
　第５のノードに接続され、
　前記第４のノードと前記第５のノードとのうち少なくとも一方は、
　前記出力端子に接続される。
　本発明により、周波数特性の劣化を抑制し、出力電圧の範囲の狭小化を抑制する演算増幅回路を提供できる。
実施の形態１の図で、演算増幅回路２００の回路図。 実施の形態１の図で、演算増幅回路２１０の回路図。 実施の形態１の図で、演算増幅回路２００－１の回路図。 実施の形態１の図で、出力増幅段２０２－１の構成を含む基本的な回路図。 実施の形態１の図で、演算増幅回路２００－１の第１のｐＭＯＳＦＥＴ１０７及び第２のｐＭＯＳＦＥＴ１０８のレイアウト形状の例を示す図。 実施の形態１の図で、演算増幅回路２００－１の第１のｐＭＯＳＦＥＴ１０７及び第２のｐＭＯＳＦＥＴ１０８のレイアウト形状の別の例を示す図。 実施の形態１の図で、演算増幅回路２００－１の第１のｎＭＯＳＦＥＴ１０９及び第２のｎＭＯＳＦＥＴ１１０のレイアウト形状の例を示す図。 実施の形態１の図で、演算増幅回路２００－１の第１のｎＭＯＳＦＥＴ１０９及び第２のｎＭＯＳＦＥＴ１１０のレイアウト形状の別の例を示す図。 実施の形態１の図で、演算増幅回路２００－２の回路図。
　実施の形態１．
　以下では演算増幅回路２００，演算増幅回路２００－１を説明する。以下の説明では電圧を電圧＜ＶＯＵＴ＞のように表記し、端子を端子ＶＯＵＴのように表記する。電圧＜ＶＯＵＴ＞は端子ＶＯＵＴの電圧を意味する。また、端子の電圧は、端子の電位と同じ意味である。
＊＊＊演算増幅回路２００の構成の説明＊＊＊
　図１は、実施の形態１の演算増幅回路２００－１の前提となる、プッシュプル型ソースフォロワ回路を有する演算増幅回路２００の回路構成を示す。プッシュプル型ソースフォロワ回路は図１の出力増幅段２０２の範囲２０２Ａが対応する。演算増幅回路２００は、非反転入力端子である差動入力端子ＶＩＰ及び反転入力端子である差動入力端子ＶＩＭ、バイアス入力端子ＶＢＩＡＳ、出力端子ＶＯＵＴを有する。演算増幅回路２００は、差動増幅段２０１と、出力増幅段２０２とを備える。差動増幅段２０１は、差動入力端子ＶＩＰと差動入力端子ＶＩＭとの電位差を増幅し、第１の電圧＜ＶＡ＞を出力する。出力増幅段２０２は、差動増幅段２０１の出力する第１の電圧＜ＶＡ＞を増幅し、増幅した電圧を、出力端子ＶＯＵＴから第２の電圧である出力電圧＜ＶＯＵＴ＞として出力する。
　差動増幅段２０１は、ｎＭＯＳＦＥＴ１００、差動対２１１、能動負荷２２１を備える。ｎＭＯＳＦＥＴ１００は、バイアス入力端子ＶＢＩＡＳから入力されるバイアス電圧をゲートに受けてバイアス電流を生成する。差動対２１１は、ｎＭＯＳＦＥＴ１０１とｎＭＯＳＦＥＴ１０２とを備える。能動負荷２２１は、ｐＭＯＳＦＥＴ１０３とｐＭＯＳＦＥＴ１０４とを備える。
（１）出力増幅段２０２は、第１のｎＭＯＳＦＥＴ１０９、第２のｎＭＯＳＦＥＴ１１０、第１のｐＭＯＳＦＥＴ１０７、第２のｐＭＯＳＦＥＴ１０８、第３のｎＭＯＳＦＥＴ１０５、第３のｐＭＯＳＦＥＴ１０６を備えている。
（２）第２のｎＭＯＳＦＥＴ１１０及び第２のｐＭＯＳＦＥＴ１０８は、ソースが出力端子ＶＯＵＴに接続されている。
（３）第１のｎＭＯＳＦＥＴ１０９は、第２のｎＭＯＳＦＥＴ１１０のレプリカである。
（４）第１のｐＭＯＳＦＥＴ１０７は、第２のｐＭＯＳＦＥＴ１０８のレプリカである。
（５）第３のｐＭＯＳＦＥＴ１０６は、差動増幅段２０１が出力する第１の電圧＜ＶＡ＞をゲートに受けて増幅する。
（６）第３のｎＭＯＳＦＥＴ１０５は、バイアス入力端子ＶＢＩＡＳから入力されるバイアス電圧をゲートに受けてバイアス電流を生成する。
（１）出力増幅段２０２において、第１のｎＭＯＳＦＥＴ１０９のゲート端子ＶＧＮは、第１のｎＭＯＳＦＥＴ１０９のドレイン及び第３のｐＭＯＳＦＥＴ１０６のドレインと接続される。
（２）第１のｐＭＯＳＦＥＴ１０７のゲート端子ＶＧＰは、第１のｐＭＯＳＦＥＴ１０７のドレイン及び第３のｎＭＯＳＦＥＴ１０５のドレインと接続される。
（３）第１のｎＭＯＳＦＥＴ１０９及び第１のｐＭＯＳＦＥＴ１０７のソースは、互いに接続される。
（４）第２のｎＭＯＳＦＥＴ１１０及び第２のｐＭＯＳＦＥＴ１０８は、ソースが出力端子ＶＯＵＴに接続され、ゲートがゲート端子ＶＧＮ及びゲート端子ＶＧＰに接続され、ドレインが、それぞれ電源端子ＶＤＤ及び接地端子ＶＳＳに接続される。
（５）また、第１のｎＭＯＳＦＥＴ１０９及び第２のｎＭＯＳＦＥＴ１１０のウェル電位は、接地端子ＶＳＳから供給される。
（６）第１のｐＭＯＳＦＥＴ１０７及び第２のｐＭＯＳＦＥＴ１０８のウェル電位は、電源端子ＶＤＤから供給される。
　図１において、第１のｎＭＯＳＦＥＴ１０９及び第１のｐＭＯＳＦＥＴ１０７は、ゲート端子ＶＧＮとゲート端子ＶＧＰとの間に、第３のｎＭＯＳＦＥＴ１０５から供給されるバイアス電流に応じた以下の式（１）の電位差＜ＶＧ＞を発生させて、第２のｎＭＯＳＦＥＴ１１０及び第２のｐＭＯＳＦＥＴ１０８をバイアスする。
　＜ＶＧ＞＝＜ＶＧＮ＞－＜ＶＧＰ＞　　　　　　　式（１）
　すなわち、第１のｎＭＯＳＦＥＴ１０９及び第１のｐＭＯＳＦＥＴ１０７は、第２のｎＭＯＳＦＥＴ１１０及び第２のｐＭＯＳＦＥＴ１０８のレプリカとして機能することで、ＡＢ級動作を実現する。ここで、第１のｐＭＯＳＦＥＴ１０７、第２のｐＭＯＳＦＥＴ１０８、第１のｎＭＯＳＦＥＴ１０９、第２のｎＭＯＳＦＥＴ１１０のゲート幅をそれぞれＷ１０７、Ｗ１０８、Ｗ１０９、Ｗ１１０とし、ゲート長をそれぞれＬ１０７、Ｌ１０８、Ｌ１０９、Ｌ１１０とする。そして、以下に示す式（２）が成り立つ場合には、バイアス状態における第２のｎＭＯＳＦＥＴ１１０及び第２のｐＭＯＳＦＥＴ１０８に流れる電流は、第１のｎＭＯＳＦＥＴ１０９及び第１のｐＭＯＳＦＥＴ１０７に流れる電流のＮ倍となる。
　（Ｗ１０８／Ｌ１０８）／（Ｗ１０７／Ｌ１０７）
　＝（Ｗ１１０／Ｌ１１０）／（Ｗ１０９／Ｌ１０９）
　＝Ｎ　　　　　　　　　　　　　　　　　　　　　式（２）
　図１に示す構成によると、出力増幅段２０２の第１のｐＭＯＳＦＥＴ１０７、第２のｐＭＯＳＦＥＴ１０８のウェル電位は電源端子ＶＤＤに接続され、第１のｎＭＯＳＦＥＴ１０９、第２のｎＭＯＳＦＥＴ１１０のウェル電位はグランド電位である接地端子ＶＳＳに接続されている。これに対して、第１のｐＭＯＳＦＥＴ１０７、第２のｐＭＯＳＦＥＴ１０８、第１のｎＭＯＳＦＥＴ１０９、第２のｎＭＯＳＦＥＴ１１０のソース電位は、グランド電位と電源電位の間の値となる。このため、第１のｐＭＯＳＦＥＴ１０７、第２のｐＭＯＳＦＥＴ１０８、第１のｎＭＯＳＦＥＴ１０９、第２のｎＭＯＳＦＥＴ１１０のソース―ウェル間のｐｎ接合は逆方向にバイアスされるので、ソース―ウェル間電圧がゼロでのいわゆるゼロバイアス時に比べ、基板バイアス効果により、閾値電圧の絶対値が増加する。
　ここで、図１に示す演算増幅回路２００が正常に動作するためには、演算増幅回路２００を構成するＭＯＳＦＥＴは、全て強反転かつ飽和領域で動作する必要がある。すなわち、ゲート―ソース間電圧が閾値電圧より大きく、ドレイン―ソース間電圧が、ゲート―ソース間電圧から閾値電圧を引いた電圧値より大きい状態で動作することが必要である。このため、ＭＯＳＦＥＴの閾値電圧が増加すると、演算増幅回路２００の出力端子ＶＯＵＴから出力する電圧の範囲が狭くなり、演算増幅回路２００を使用する上での制約が大きくなる。演算増幅回路２００の出力電圧の範囲を大きくするには、ＭＯＳＦＥＴの閾値電圧を低くする必要がある。
　図２は、演算増幅回路２１０の回路図である。演算回路２１０は、出力増幅段２０３の構成が図１の出力増幅段２０２と異なる。閾値電圧を低くするには、図２に示す出力増幅段２０３のように、第１のｐＭＯＳＦＥＴ１０７、第２のｐＭＯＳＦＥＴ１０８、第１のｎＭＯＳＦＥＴ１０９、第２のｎＭＯＳＦＥＴ１１０について、それぞれソースとウェルとを接続し、ソース―ウェル間の電位差をゼロにすることが有効である。
　一方で、図２の出力増幅段２０３のように、ソースとウェルとを接続した場合、ウェル底面及び外周部分のｐｎ接合部分の寄生容量がソース端子に接続されることで、周波数特性が劣化する。特に第１のｐＭＯＳＦＥＴ１０７及び第１のｎＭＯＳＦＥＴ１０９のソース端子の寄生容量の増加は、出力増幅段２０２の周波数特性の劣化要因となる。
　そこで、図３に、図１の演算増幅回路２００で生じる出力電圧の範囲の狭小化を抑制し、また図２の演算増幅回路２１０で生じる周波数特性の劣化を抑制する演算増幅回路２００－１の構成を示す。
＊＊＊演算増幅回路２００－１の構成の説明＊＊＊
　図３は、演算増幅回路２００－１の回路図である。演算増幅回路２００－１は、第１の電圧＜ＶＡ＞を出力する差動増幅段２０１の第１の電圧＜ＶＡ＞を増幅し、出力端子ＶＯＵＴから増幅された電圧を第２の電圧として出力する出力増幅段２０２－１を備えている。図３の演算増幅回路２００－１では、プッシュプル型ソースフォロワ回路は出力増幅段２０２－１の範囲２０２Ａ－１が対応する。
　図３では図１の演算増幅回路２００と同一の部品、構成要素には同一の符号を付した。演算増幅回路２００－１は、図１の演算増幅回路２００に対して出力増幅段２０２－１の構成が異なる。図３では、出力増幅段２０２－１の特徴であるウェルの接続状態を太い線で示す。出力増幅段２０２－１の特徴は、第１のｐＭＯＳＦＥＴ１０７及び第２のｐＭＯＳＦＥＴ１０８のｎウェルは出力端子ＶＯＵＴに接続し、第１のｎＭＯＳＦＥＴ１０９及び第２のｎＭＯＳＦＥＴ１１０のｐウェルは出力端子ＶＯＵＴに接続して、ｎウェル、ｐウェルに電位を供給するという構成である。
　図３に示す出力増幅段２０２－１は一つの具体例であり、図４に、図３の出力増幅段２０２－１の構成を含む、基本的な回路構成を示した。
　図４は、出力増幅段２０２－１の構成を含む基本的な回路構成である。図４はウェル電位の供給方法を示す図である。図４を用いて、出力増幅段２０２－１の構成を説明する。図４では、第１のｐＭＯＳＦＥＴ１０７、第２のｐＭＯＳＦＥＴ１０８、第１のｎＭＯＳＦＥＴ１０９、第２のｎＭＯＳＦＥＴ１１０、第３のｎＭＯＳＦＥＴ１０５、第３のｐＭＯＳＦＥＴ１０６を実線で示し、配線を破線で示した。
　図４に示す出力増幅段２０２－１は、出力増幅段２０２と同様に、第１のｐＭＯＳＦＥＴ１０７、第２のｐＭＯＳＦＥＴ１０８、第１のｎＭＯＳＦＥＴ１０９、第２のｎＭＯＳＦＥＴ１１０、第３のｎＭＯＳＦＥＴ１０５、第３のｐＭＯＳＦＥＴ１０６を備えている。
（１）第１のｎＭＯＳＦＥＴ１０９は第１のｐウェルＰＷ１が形成されている。第１のｎＭＯＳＦＥＴ１０９は、短絡されたゲートとドレインとが第１のノードＮ（１）に接続され、ソースが第２のノードＮ（２）に接続されている。図３では、第１のノードＮ（１）は、第１のｎＭＯＳＦＥＴ１０９のゲート端子ＶＧＮが対応し、第２のノードＮ（２）は、例えば、第１のｎＭＯＳＦＥＴ１０９のソース端子が対応する。
（２）第２のｎＭＯＳＦＥＴ１１０は第２のｐウェルＰＷ２が形成されている。第２のｎＭＯＳＦＥＴ１１０は、ゲートが第１のノードＮ（１）に接続され、ドレインが第１の基準端子２３１に接続され、ソースが出力端子ＶＯＵＴに接続される。図３では、第１の基準端子２３１は電源端子ＶＤＤが対応する。
（３）第１のｐＭＯＳＦＥＴ１０７は第１のｎウェルＮＷ１が形成されている。第１のｐＭＯＳＦＥＴ１０７は、短絡されたゲートとドレインとが第３のノードＮ（３）に接続され、ソースが第２のノードＮ（２）に接続されている。図３では、第３のノードＮ（３）は第１のｐＭＯＳＦＥＴ１０７のゲート端子ＶＧＰが対応する。
（４）第２のｐＭＯＳＦＥＴ１０８は第２のｎウェルＮＷ２が形成されている。第２のｐＭＯＳＦＥＴ１０８は、ゲートが第３のノードＮ（３）に接続され、ドレインが第２の基準端子２３２に接続され、ソースが出力端子ＶＯＵＴに接続されている。図３では、第２の基準端子２３２は接地端子ＶＳＳが対応する。図３では、第４のノードＮ（４）及び第５のノードＮ（５）は、出力端子ＶＯＵＴが対応する。
（５）第１のｐウェルＰＷ１と第２のｐウェルＰＷ２とは、第４のノードＮ（４）に接続され、第１のｎウェルＮＷ１と第２のｎウェルＮＷ２とは、第５のノードＮ（５）に接続されている。
（６）第４のノードＮ（４）と第５のノードＮ（５）とのうち少なくとも一方は、出力端子ＶＯＵＴに接続される。つまり、図３の場合は、第４のノードＮ（４）及び第５のノードＮ（５）は出力端子ＶＯＵＴに接続しているが、この接続は例であり、第４のノードＮ（４）と第５のノードＮ（５）とのうち少なくとも一方が出力端子ＶＯＵＴに接続すればよい。第４のノードＮ（４）のみが出力端子ＶＯＵＴに接続する場合は、第５のノードＮ（５）は図１のように電源端子ＶＤＤに接続すればよい。一方、第５のノードＮ（５）のみが出力端子ＶＯＵＴに接続する場合は、第４のノードＮ（４）は図１のように接地端子ＶＳＳに接続すればよい。
（７）第３のｐＭＯＳＦＥＴ１０６は、ゲートが第６のノードＮ（６）に接続され、ドレインが第１のノードＮ（１）に接続され、ソースが第１の基準端子２３１に接続される。
　図３では、第６のノードＮ（６）は、例えばｐＭＯＯＳＦＥＴ１０３のドレイン端子が対応する。
（８）第３のｎＭＯＳＦＥＴ１０５は、ゲートが第７のノードＮ（７）に接続され、ドレインが第３のノードＮ（３）に接続され、ソースが第２の基準端子２３２に接続される。図３では、第７のノードＮ（７）は、バイアス入力端子ＶＢＩＡＳが対応する。
（９）第６のノードＮ（６）と、第７のノードＮ（７）との一方は、第１の電圧＜ＶＡ＞が供給され、第６のノードＮ（６）と、第７のノードＮ（７）との他方は、バイアス電圧＜ＶＢＩＡＳ＞が供給される。図３では、第６のノードＮ（６）に第１の電圧＜ＶＡ＞が供給され、第７のノードＮ（７）にバイアス電圧＜ＶＢＩＡＳ＞が供給されるけれども、この供給は一例である。第６のノードＮ（６）にバイアス電圧＜ＶＢＩＡＳ＞が供給され、第７のノードＮ（７）に第１の電圧＜ＶＡ＞が供給される構成でも構わない。この構成は図９で後述する。
＊＊＊演算増幅回路２００－１の増幅方法に関する説明＊＊＊
　図３に示す演算増幅回路２００－１における第１のｐＭＯＳＦＥＴ１０７、第２のｐＭＯＳＦＥＴ１０８、第１のｎＭＯＳＦＥＴ１０９、第２のｎＭＯＳＦＥＴ１１０のそれぞれのゲート幅及びゲート長について式（２）が成り立つとすると、次の式（３）、式（４）が成り立つ。
　｜＜ＶＧＳ１０７＞｜＝｜＜ＶＧＳ１０８＞｜　　式（３）
　｜＜ＶＧＳ１０９＞｜＝｜＜ＶＧＳ１１０＞｜　　式（４）
　ここで、＜ＶＧＳ１０７＞～＜ＶＧＳ１１０＞は、それぞれ、第１のｐＭＯＳＦＥＴ１０７、第２のｐＭＯＳＦＥＴ１０８、第１のｎＭＯＳＦＥＴ１０９、第２のｎＭＯＳＦＥＴ１１０のゲート―ソース間電圧である。レプリカである第１のｐＭＯＳＦＥＴ１０７、レプリカである第１のｎＭＯＳＦＥＴ１０９のソースが接続されるノードの電位を＜ＶＳ＞とすると、式（３）、式（４）より、式（５）が成り立つ。ここで＜ＶＯＵＴ＞は出力端子ＶＯＵＴの電圧である。
　＜ＶＳ＞＝＜ＶＯＵＴ＞　　　　　　　　　　　　式（５）
　つまり、第１のｐＭＯＳＦＥＴ１０７、第２のｐＭＯＳＦＥＴ１０８、第１のｎＭＯＳＦＥＴ１０９、第２のｎＭＯＳＦＥＴ１１０のソース電位はいずれも出力端子ＶＯＵＴの電圧に等しくなる。
＊＊＊効果の説明＊＊＊
　したがって、第１のｐＭＯＳＦＥＴ１０７と第２のｐＭＯＳＦＥＴ１０８とのｎウェルと、第１のｎＭＯＳＦＥＴ１０９と第２のｎＭＯＳＦＥＴ１１０とのｐウェルとを出力端子ＶＯＵＴに接続して電位を供給した場合、ソース―ウェル間の電位差はゼロとなるため、基板バイアス効果による閾値電圧の増加は抑制される。このため、図３に示す実施の形態１の演算増幅回路２００－１は、図１の演算増幅回路２００に対し、広い出力電圧範囲を有する。
　更に、本構成とすることで、第１のｐＭＯＳＦＥＴ１０７、第１のｎ１０９のウェル底面及び外周のｐｎ接合部に存在する寄生容量が、第１のｐＭＯＳＦＥＴ１０７及び第１のｎＭＯＳＦＥＴ１０９のソース端子に接続されないため、良好な周波数特性が得られる。即ち、図３に示す演算増幅回路２００－１の構成によれば、出力増幅段２０２－１において、第１のｐＭＯＳＦＥＴ１０７のｎウェル及び第１のｎＭＯＳＦＥＴ１０９のｐウェルを出力端子ＶＯＵＴに接続し、第１のｐＭＯＳＦＥＴ１０７及び第１のｎＭＯＳＦＥＴ１０９のソース端子に寄生容量を接続しない構成である。この構成とすることで、周波数特性の劣化を伴わず、第１のｐＭＯＳＦＥＴ１０７、第２のｐＭＯＳＦＥＴ１０８、第１のｎＭＯＳＦＥＴ１０９、第２のｎＭＯＳＦＥＴ１１０のソース―ウェル間電圧をゼロにして閾値電圧を下げることで出力電圧範囲を広くすることが可能となる。
＊＊＊ウェルのレイアウトの構成方法の説明＊＊＊
　次に、第１のｐＭＯＳＦＥＴ１０７、第２のｐＭＯＳＦＥＴ１０８、第１のｎＭＯＳＦＥＴ１０９、第２のｎＭＯＳＦＥＴ１１０のウェルのレイアウトの構成方法を示す。まず、第１のｐＭＯＳＦＥＴ１０７及び第２のｐＭＯＳＦＥＴ１０８の場合を説明する。
　図５は、第１のｐＭＯＳＦＥＴ１０７、第２のｐＭＯＳＦＥＴ１０８のウェルのレイアウトの構成方法を示す。図５に示すように、ｐ型基板に形成された第１のｎウェルＮＷ１と第２のｎウェルＮＷ２とは、互いに分離され、配線層２４０によって第５のノードＮ（５）に接続される。なお、第５のノードＮ（５）は出力端子ＶＯＵＴに接続されている。図５のように、第１のｐＭＯＳＦＥＴ１０７及び第２のｐＭＯＳＦＥＴ１０８は、互いに電気的に分離された第１のｎウェルＮＷ１、第２のｎウェルＮＷ２上に形成されることで、第１のｐＭＯＳＦＥＴ１０７及び第２のｐＭＯＳＦＥＴ１０８が実現できる。このとき、第１のｎウェルＮＷ１及び第２のｎウェルＮＷ２の電位は、配線層２４０を用いて第１のｎウェルＮＷ１及び第２のｎウェルＮＷ２が共に出力端子ＶＯＵＴに接続されることで、出力端子ＶＯＵＴから供給される。
　図６は、ｎウェルを単一化した構成方法を示す。図６に示すように、図５に示した第１のｎウェルＮＷ１と第２のｎウェルＮＷ２とは、単一のｎウェルＮＷによって単一の領域として形成され、配線層２４０によって第５のノードＮ（５）に接続される。図６では第５のノードＮ（５）は出力端子ＶＯＵＴに接続する。図６に示すように、第１のｐＭＯＳＦＥＴ１０７及び第２のｐＭＯＳＦＥＴ１０８を単一のｎウェルＮＷ上に形成し、ウェルの電位は、配線層２４０を用いて単一のｎウェルＮＷを出力端子ＶＯＵＴに接続して出力端子ＶＯＵＴから供給する構成としてもよい。
　尚、図５、図６ではｐＭＯＳＦＥＴのレイアウト形状を説明した。ｎＭＯＳＦＥＴについては、ｎ型の埋込み層やエピタキシャル層を形成し、その上にｐ型基板と電気的に分離されたｐウェルを形成することで実現することができる。このため、図５、図６のｎ及びｐの記載、及び図５、図６に関する説明文中のｎ及びｐの記載において、ｎ及びｐを、ｐ及びｎに置換すればよい。
　図７は、第１のｎＭＯＳＦＥＴ１０９及び第２のｎＭＯＳＦＥＴ１１０のウェルのレイアウトの構成方法を示す図であり図５に対応する。おいてｎ及びｐを、ｐ及びｎに置換した図である。図７に示すように、第１のｐウェルＰＷ１と第２のｐウェルＰＷ２とは、第３のｎウェルＮＷ３により互いに分離され、また、第１のｐウェルＰＷ１と第２のｐウェルＰＷ２とは、第３のｎウェルＮＷ３によってｐ型基板から分離される。第１のｐウェルＰＷ１と第２のｐウェルＰＷ２とは、配線層２４０によって第４のノードＮ（４）に接続される。なお、第４のノードＮ（４）は出力端子ＶＯＵＴに接続されている。
　図８は、第１のｎＭＯＳＦＥＴ１０９及び第２のｎＭＯＳＦＥＴ１１０のウェルのレイアウトの構成方法に関して、第１のｎＭＯＳＦＥＴ１０９及び第２のｎＭＯＳＦＥＴ１１０が単一のｐウェルＰＷ上に形成された場合を示す図であり、図６に対応する。図８に示すように、図７に示した第１のｐウェルＰＷ１と第２のｐウェルＰＷ２とは、単一のｐウェルＰＷによって単一の領域として形成される。単一のｐウェルＰＷは第３のｐウェルＰＷ３によってｐ型基板と分離される。単一のｐウェルＰＷは配線層２４０によって第４のノードＮ（４）に接続される。図８では第４のノードＮ（４）は出力端子ＶＯＵＴに接続する。
　また、実施の形態１では、図３に示すように、第１のｎＭＯＳＦＥＴ１０９及び第２のｎＭＯＳＦＥＴ１１０、第１のｐＭＯＳＦＥＴ１０７及び第２のｐＭＯＳＦＥＴ１０８の両方のウェル電位を出力端子ＶＯＵＴから供給する構成として説明を行ったが、この構成に限定されない。例えば埋込み層やエピタキシャル層が使用できず、ｎＭＯＳＦＥＴのウェルがシリコン基板と分離できない場合などは、ｎＭＯＳＦＥＴ、ｐＭＯＳＦＥＴのいずれか一方のウェルのみ出力端子ＶＯＵＴから電位を供給する構成としてもよい。この構成は図４の説明で述べたとおりである。
　また、ｎＭＯＳＦＥＴである第１のｎＭＯＳＦＥＴ１０９及び第２のｎＭＯＳＦＥＴ１１０と、ｐＭＯＳＦＥＴである第１のｐＭＯＳＦＥＴ１０７及び第２のｐＭＯＳＦＥＴ１０８とのうち一方の組は、バイポーラトランジスタに置き換え、他方の組はＭＯＳＦＥＴのウェルに出力端子ＶＯＵＴから電位を供給する構成としてもよい。
　また、演算増幅回路２００－１は、差動増幅段２０１の差動対２１１にｎＭＯＳＦＥＴを使用したため、出力増幅段２０２－１の第３のｐＭＯＳＦＥＴ１０６を増幅ＭＯＳＦＥＴとし、第３のｎＭＯＳＦＥＴ１０５を電流源ＭＯＳＦＥＴとした。つまり図３では、差動増幅段２０１は、２つのｎＭＯＳＦＥＴを有する差動対２１１を備えた。しかし、この構成に限定されない。
　図９は、演算増幅回路２００－２の回路図である。つまり、図９に示す演算増幅回路２００－２のように、差動増幅段２０１－１は２つのｐＭＯＳＦＥＴを有する差動対２１１－１を備える構成とする。これに伴い、差動増幅段２０１－１は図３の差動増幅段２０１に対してＭＯＳＦＥＴの極性が反対になっている。例えば図９では、図３の差動増幅段２０１のｎＭＯＳＦＥＴ１００に対して、対応するｐＭＯＳＦＥＴをｐＭＯＳＦＥＴ１００－１とした。このように差動増幅段２０１－１は図３の差動増幅段２０１のｎＭＯＳＦＥＴをｐＭＯＳＦＥＴに置き換え、ｐＭＯＳＦＥＴをｎＭＯＳＦＥＴに置き換え、上下を反転した構成である。上下を反転した構成とは、言い換えれば、電源端子ＶＤＤと接地端子ＶＳＳとに関して、接続を上下逆にした構成である。図９に示すように、第３のｎＭＯＳＦＥＴ１０５のゲートは出力電圧＜ＶＡ＞を受け、第３のｐＭＯＳＦＥＴ１０６のゲートはバイアス電圧＜ＶＢＩＡＳ＞を受ける構成としてもよい。
　Ｎ（１）　第１のノード、Ｎ（２）　第２のノード、Ｎ（３）　第３のノード、Ｎ（４）　第４のノード、Ｎ（５）　第５のノード、Ｎ（６）　第６のノード、Ｎ（７）　第７のノード、ＮＷ１　第１のｎウェル、ＮＷ２　第２のｎウェル、ＰＷ１　第１のｐウェル、ＰＷ２　第２のｐウェル、ＶＢＩＡＳ　バイアス入力端子、ＶＩＰ，ＶＩＭ　差動入力端子、ＶＯＵＴ　出力端子、ＶＧＰ　ゲート端子、ＶＧＮ　ゲート端子、ＶＤＤ　電源端子、ＶＳＳ　接地端子、＜ＶＳ＞　第１の出力電圧、２００，２００－１，２００－２，２１０　演算増幅回路、２０１，２０１－１　差動増幅段、２０２，２０２－１，２０３　出力増幅段、２１１，２１１－１　差動対、２２１，２２１－１　能動負荷、２３１　第１の基準端子、２３２　第２の基準端子、２４０　配線層、１００，１０１，１０２　ｎＭＯＳＦＥＴ、１０３，１０４　ｎＭＯＳＦＥＴ、１０５　第３のｎＭＯＳＦＥＴ、１０６　第３のｐＭＯＳＦＥＴ、１０７　第１のｐＭＯＳＦＥＴ、１０８　第２のｐＭＯＳＦＥＴ、１０９　第１のｎＭＯＳＦＥＴ、１１０　第２のｎＭＯＳＦＥＴ。

Claims (8)

  1. 　第１の電圧を出力する差動増幅段の前記第１の電圧を増幅し、出力端子から増幅された電圧を出力する出力増幅段を備えた演算増幅回路において、
    　前記出力増幅段は、
    　第１のｐウェルが形成され、短絡されたゲートとドレインとが第１のノードに接続され、ソースが第２のノードに接続された第１のｎＭＯＳＦＥＴと、
    　第２のｐウェルが形成され、ゲートが前記第１のノードに接続され、ドレインが第１の基準端子に接続され、ソースが前記出力端子に接続された第２のｎＭＯＳＦＥＴと、
    　第１のｎウェルが形成され、短絡されたゲートとドレインとが第３のノードに接続され、ソースが前記第２のノードに接続された第１のｐＭＯＳＦＥＴと、
    　第２のｎウェルが形成され、ゲートが前記第３のノードに接続され、ドレインが第２の基準端子に接続され、ソースが前記出力端子に接続された第２のｐＭＯＳＦＥＴと
    を備え、
    　前記第１のｐウェルと前記第２のｐウェルとは、
    　第４のノードに接続され、
    　前記第１のｎウェルと前記第２のｎウェルとは、
    　第５のノードに接続され、
    　前記第４のノードと前記第５のノードとのうち少なくとも一方は、
    　前記出力端子に接続された演算増幅回路。
  2. 　前記出力増幅段は、さらに、
    　ゲートが第６のノードに接続され、ドレインが前記第１のノードに接続され、ソースが前記第１の基準端子に接続された第３のｐＭＯＳＦＥＴと、
    　ゲートが第７のノードに接続され、ドレインが前記第３のノードに接続され、ソースが前記第２の基準端子に接続された第３のｎＭＯＳＦＥＴと
    を備え、
    　前記第６のノードと、前記第７のノードとの一方は、
    　前記第１の電圧が供給され、
    　前記第６のノードと、前記第７のノードとの他方は、
    　バイアス電圧が供給される請求項１に記載の演算増幅回路。
  3. 　前記第１のｎウェルと前記第２のｎウェルとは、
    　互いに分離され、配線層によって前記第５のノードに接続された請求項１または２に記載の演算増幅回路。
  4. 　前記第１のｎウェルと前記第２のｎウェルとは、
    　単一のｎウェルによって単一の領域として形成され、配線層によって前記第５のノードに接続された請求項１または２に記載の演算増幅回路。
  5. 　前記第１のｐウェルと前記第２のｐウェルとは、
    　第３のｎウェルにより互いに分離され、配線層によって前記第４のノードに接続された請求項１～４のいずれか一項に記載の演算増幅回路。
  6. 　前記第１のｐウェルと前記第２のｐウェルとは、
    　単一のｐウェルによって単一の領域として形成され、配線層によって前記第４のノードに接続された請求項１～４のいずれか一項に記載の演算増幅回路。
  7. 　前記差動増幅段は、
    　２つのｎＭＯＳＦＥＴを有する差動対を備えた請求項１～６のいずれか一項に記載の演算増幅回路。
  8. 　前記差動増幅段は、
    　２つのｐＭＯＳＦＥＴを有する差動対を備えた請求項１～６のいずれか一項に記載の演算増幅回路。
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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018212957B3 (de) 2018-08-02 2020-01-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Übertragung von daten von einem benutzerendgerät zu einem anderen gerät
US20200194459A1 (en) * 2018-12-18 2020-06-18 Vanguard International Semiconductor Corporation Semiconductor devices and methods for fabricating the same
DE102019206848B3 (de) * 2019-05-10 2020-08-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Abstimmung eines elektromagnetischen Schwingkreises einer Konfigurationsschnittstelle eines Teilnehmers eines Kommunikationssystems
JP7222847B2 (ja) * 2019-08-26 2023-02-15 株式会社東芝 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004173264A (ja) * 2002-11-08 2004-06-17 Semiconductor Energy Lab Co Ltd 表示装置
US20060132177A1 (en) * 2000-09-11 2006-06-22 Broadcom Corporation Linear buffer

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5545202A (en) * 1978-09-26 1980-03-29 Hitachi Ltd Push-pull amplifier
JPS62125709A (ja) * 1985-11-26 1987-06-08 Hitachi Ltd 半導体集積回路
IT1185935B (it) 1985-09-18 1987-11-18 Sgs Microelettronica Spa Stradio di uscita cmos a grande escursione di tensione e con stabilizzazione della corrente di rifoso
JPS6450603A (en) * 1987-08-21 1989-02-27 Toshiba Corp Current amplifying circuit
JPH01141407A (ja) * 1987-11-28 1989-06-02 Mitsubishi Electric Corp 演算増幅器
US5187429A (en) * 1992-02-20 1993-02-16 Northern Telecom Limited Reference voltage generator for dynamic random access memory
FR2691306B1 (fr) * 1992-05-18 1994-08-12 Sgs Thomson Microelectronics Amplificateur avec limitation de courant de sortie.
JPH07235844A (ja) 1994-02-24 1995-09-05 Nec Corp アナログドライバｉｃの出力バッファ回路
JP3403242B2 (ja) * 1994-03-31 2003-05-06 新日本無線株式会社 電圧ホロワ回路
JP3799775B2 (ja) * 1997-10-07 2006-07-19 ソニー株式会社 出力バッファ回路
JP2001211076A (ja) 2000-01-26 2001-08-03 Thine Electronics Inc 半導体集積回路装置
US6727758B2 (en) * 2002-05-28 2004-04-27 Koninklijke Philips Electronics N.V. Fast cascaded class AB bipolar output stage
SG143934A1 (en) 2002-11-08 2008-07-29 Semiconductor Energy Lab Display appliance
JP4240316B2 (ja) 2004-04-19 2009-03-18 旭化成エレクトロニクス株式会社 演算増幅器
US7262662B2 (en) 2004-04-19 2007-08-28 Asahi Kasei Microsystems Co., Ltd. Operational amplifier
US20080169516A1 (en) * 2007-01-17 2008-07-17 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices for alleviating well proximity effects
US7920027B2 (en) 2008-04-07 2011-04-05 Qualcomm Incorporated Amplifier design with biasing and power control aspects
JP5268574B2 (ja) 2008-11-06 2013-08-21 株式会社東芝 半導体集積回路装置
JP5236438B2 (ja) * 2008-11-26 2013-07-17 セイコーインスツル株式会社 半導体集積回路装置
JP2010178094A (ja) 2009-01-30 2010-08-12 Fujitsu Semiconductor Ltd 半導体集積回路装置
EP2472723B1 (en) * 2011-01-04 2015-12-16 ams AG Amplifier with non-linear current mirror
JP5528378B2 (ja) 2011-03-07 2014-06-25 ルネサスエレクトロニクス株式会社 半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060132177A1 (en) * 2000-09-11 2006-06-22 Broadcom Corporation Linear buffer
JP2004173264A (ja) * 2002-11-08 2004-06-17 Semiconductor Energy Lab Co Ltd 表示装置

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