WO2016041279A1 - Dispositif de dépôt en phase vapeur et procédé de dépôt en phase vapeur - Google Patents

Dispositif de dépôt en phase vapeur et procédé de dépôt en phase vapeur Download PDF

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Publication number
WO2016041279A1
WO2016041279A1 PCT/CN2014/094061 CN2014094061W WO2016041279A1 WO 2016041279 A1 WO2016041279 A1 WO 2016041279A1 CN 2014094061 W CN2014094061 W CN 2014094061W WO 2016041279 A1 WO2016041279 A1 WO 2016041279A1
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WIPO (PCT)
Prior art keywords
evaporation
organic vapor
organic
vapor
evaporation source
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PCT/CN2014/094061
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English (en)
Chinese (zh)
Inventor
赵德江
藤野诚治
殷杰
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京东方科技集团股份有限公司
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Publication of WO2016041279A1 publication Critical patent/WO2016041279A1/fr

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material

Definitions

  • Embodiments of the present invention relate to an evaporation apparatus and an evaporation method.
  • OLED Organic Light Emitting Diode
  • the basic structure of an OLED display device mainly includes an anode and a cathode, and an organic material functional layer therebetween.
  • the functional layer of the organic material is a core part of the OLED display device, and the manufacturing method thereof includes inkjet printing, spin coating, evaporation, and the like. Due to the limited equipment and processes, the functional layer of organic materials produced by inkjet printing or spin coating cannot be applied to mass production. Currently, the only method that can achieve mass production is vapor deposition.
  • Embodiments of the present invention provide an evaporation apparatus and an evaporation method.
  • At least one embodiment of the present invention provides an evaporation apparatus including an evaporation source, a power application system, and an electromagnetic control system; the evaporation source is for supplying organic steam; and the power generation system is for charging the organic vapor
  • the electromagnetic control system is for controlling the rate and flow direction of the charged organic vapor, and selecting the organic vapor that enters the predetermined region and moves in a predetermined direction to be deposited on the surface of the substrate.
  • the electromagnetic control system includes an electric field region near a side of the power-on system and a magnetic field region away from a side of the power-on system; in the electric field region, an electric field having a direction of an electric field is a first direction, so that The organic vapor is accelerated; a magnetic field having a magnetic field direction in a second direction is present in the magnetic field region to deflect the organic vapor in a third direction; wherein the first direction is an evaporation direction or a direction of the evaporation source In a reverse direction of the evaporation direction, the second direction is perpendicular to the first direction, and the third direction is perpendicular to both the first direction and the second direction.
  • the electromagnetic control system may further include a screening hole corresponding to the magnetic field region;
  • the electromagnetic control system is configured to deflect the organic vapor entering the magnetic field region toward a side on which the screening aperture is located.
  • the evaporation apparatus may further include a recovery system located on both sides of the screening aperture.
  • the evaporation apparatus can further include a drive system for driving and controlling relative movement between the substrate and the screening aperture.
  • the evaporation source can be a linear evaporation source.
  • the linear evaporation source can include an evaporation vessel and a linear heating source.
  • the evaporation apparatus may further include a crystal oscillator located at an exit position of the linear evaporation source or at an exit position of the screening hole.
  • the evaporation apparatus further includes an injection system between the evaporation source and the power up system.
  • the injection system can include a plurality of identical nozzles.
  • An embodiment of the present invention further provides an evaporation method based on any one of the above vapor deposition apparatuses, comprising: heating an evaporation source to generate organic vapor; charging the organic vapor by a power-on system; and controlling charging by an electromagnetic control system
  • the rate and direction of the organic vapor is such that the organic vapor that enters the predetermined area and moves in a predetermined direction is deposited onto the surface of the substrate.
  • the controlling the rate and direction of the charged organic vapor by the electromagnetic control system such that deposition of the organic vapor entering the predetermined region and moving in a predetermined direction to the surface of the substrate may include: charging the organic vapor through the electric field The electric field in the first direction is accelerated; the accelerated organic gas is deflected in a third direction by the magnetic field in the second direction; the organic vapor reaching the screening hole after being deflected out of the screening hole And depositing to the surface of the substrate; wherein the first direction is an evaporation direction of the evaporation source or a reverse direction of the evaporation direction, and the second direction is perpendicular to the first direction, the third direction It is perpendicular to both the first direction and the second direction.
  • Figure 1 is a schematic diagram of an evaporation device
  • FIG. 2 is a schematic diagram of an evaporation device according to an embodiment of the present invention.
  • FIG. 3 is a schematic structural view of an evaporation device according to an embodiment of the present invention.
  • FIG. 4 is a flow chart of an evaporation method according to an embodiment of the present invention.
  • FIG. 5 is an example of a power-on component in a power-on system in an evaporation device according to an embodiment of the present invention
  • Fig. 6 is a view showing an example of a combination of energizing elements in a power-on system in an evaporation device according to an embodiment of the present invention.
  • 10-evaporation source 20-injection system; 30-powered system; 40-electromagnetic control system; 401-electric field region; 402-magnetic field region; 403-screening hole; 50-recovery system; 60-crystal oscillator; 80-powered component; 81-wire; 82-powered component combination.
  • a vapor deposition apparatus has a structure as shown in FIG. 1, which mainly includes an evaporation source 10 and an injection system 20.
  • the evaporation source 10 is for supplying organic vapor
  • the injection system 20 is for spraying the organic vapor onto the surface of the substrate 70 to form an organic film layer.
  • the organic vapor generated by the evaporation source 10 disperses the entire cavity, which results in a low utilization rate of the material.
  • the free diffusion of organic vapor also causes serious contamination of the cavity, requiring frequent cleaning of the baffles, thereby resulting in increased costs.
  • Embodiments of the present invention provide an evaporation apparatus and an evaporation method, which can control the flow direction of organic steam, thereby improving the utilization ratio of the organic material, and also preventing the chamber contamination caused by the diffusion of the organic material, thereby reducing the baffle. The number of cleanings and cost savings.
  • Embodiments of the present invention provide an evaporation apparatus, as shown in FIG. 2, which includes an evaporation source 10, a power up system 30, and an electromagnetic control system 40; an evaporation source 10 for supplying organic steam; and a power up system 30 for making The organic vapor is charged; the electromagnetic control system 40 is for controlling the rate and flow direction of the charged organic vapor, and organic vapor that enters the predetermined region and moves in a predetermined direction is deposited onto the surface of the substrate 70.
  • the organic vapor generated by the evaporation source 10 has a specific rate and direction; the evaporation direction of the organic vapor is directed to the power-up system 30, and the evaporation rate of the organic vapor can be adjusted by the components inside the evaporation source 10 to It is better to be able to obtain a uniform rate.
  • power up system 30 is used to charge organic vapor to facilitate control of the rate and direction of organic vapors by electromagnetic control system 40.
  • the organic steam may be positively or negatively charged, and is not specifically limited herein, but it is necessary to ensure that the control mode of the electromagnetic control system 40 is compatible with the type of organic vapor charging.
  • the electromagnetic control system 40 selects organic vapor that enters the predetermined area and moves in a predetermined direction to the surface of the substrate 70, mainly for selecting organic vapor having similar specific energy to be deposited on the surface of the substrate 70, while the substrate 70 needs to be uniform.
  • the area ejected by the organic vapor ensures the uniformity of the film formation and the stability of the bonding strength.
  • Embodiments of the present invention can achieve control of the rate and flow direction of organic vapor generated by the evaporation source 10 by providing the power-up system 30 and the electromagnetic control system 40 in the evaporation apparatus, so that organic vapor having a specific energy is deposited on the substrate. 70 surface, forming a uniform film layer.
  • the rate and flow direction of the organic vapor have certain controllability, the utilization rate of the organic material can be improved, and the chamber pollution caused by the diffusion of the organic material in the organic vapor can be effectively prevented. Thereby reducing the number of times the baffle is cleaned and saving costs.
  • the electromagnetic control system 40 may include an electric field region 401 near one side of the power-on system 30 and a magnetic field region 402 remote from the side of the power-on system 30.
  • the electric field region 401 there is an electric field in which the electric field direction is the first direction to accelerate the organic vapor.
  • the magnetic field region 402 there is a magnetic field in the direction of the magnetic field in the second direction to deflect the organic vapor in the third direction.
  • the first direction may be an evaporation direction of the evaporation source 10 or a reverse direction of the evaporation direction, the second direction being perpendicular to the first direction, and the third direction being perpendicular to both the first direction and the second direction.
  • the electric field region 401 can be generated by two oppositely disposed electrodes, and by applying different voltages to the two electrodes, an electric field from one electrode to the other can be generated.
  • the direction of the electric field formed may depend on the type of charging of the organic vapor.
  • the direction of the electric field may be the evaporation direction of the evaporation source 10
  • the direction of the electric field may be the opposite direction of the evaporation direction of the evaporation source 10.
  • the magnetic field region 402 can be generated by a coil.
  • the organic vapor can be based on the direction of the magnetic field and the organic vapor
  • the charging type is correspondingly deflected, and the deflection direction is the third direction.
  • the deflection direction of the organic vapor can be judged according to the left hand rule. That is, the magnetic induction line passes vertically through the palm, the four fingers point to the direction of motion of the positive charge or the opposite direction of the direction of movement of the negative charge, and the direction of the thumb is the direction of deflection of the charge under the action of the magnetic field. It can be seen that when the first direction and the second direction are determined, the third direction is also determined.
  • the electric field region 401 is close to the power-up system 30, and the magnetic field region 402 is away from the power-up system 30.
  • the organic vapor can be deflected before being accelerated.
  • embodiments of the invention are not limited thereto, and it is also possible that the magnetic field region 402 is adjacent to the power up system 30 and the electric field region 401 is remote from the power up system 30. In this case, the organic vapor can be accelerated after being deflected.
  • the electromagnetic control system 40 can also include a screening aperture 403 corresponding to the magnetic field region. Wherein, the organic vapor entering the magnetic field region 402 is deflected toward the side where the screening hole 403 is located.
  • the electric field direction (ie, the first direction) of the electric field region 401 is directed from the lower side of the cavity to the upper side, and the magnetic field direction of the magnetic field region 402.
  • the second direction (for example, the second direction) is directed to the front side by the rear side of the cavity, and the screening hole 403 is located at a corresponding position on the right side of the magnetic field region 402.
  • the organic vapor After the organic vapor enters the electric field region 401, it accelerates under the action of the electric field, then enters the magnetic field region 402, deflects to the right side of the cavity under the action of the magnetic field, and finally flies out from the screening hole 403, thereby It is deposited on the surface of the substrate 70.
  • the electric field direction of the electric field region ie, the first direction
  • the electric field direction of the electric field region may be changed to be directed from the upper side of the cavity to the lower side, while the screening hole 403 is disposed in the magnetic field region. The corresponding position on the side can be used, and will not be described here.
  • the evaporation apparatus may further include a recovery system 50 located on both sides of the screening hole 403.
  • the rate at which the organic vapor that is energized by the power up system 30 is accelerated after passing through the electric field is also different.
  • the angle at which organic vapors having different rates deflect after passing through the magnetic field must be different. On this basis, only organic vapor corresponding to the position of the screening hole 403 and having a specific energy can be ejected to the surface of the substrate 70, while other organic vapors are deflected to different degrees, wherein the organic vapor with insufficient deflection angle may Attached to the baffle inside the cavity, the organic vapor with excessive deflection angle may re-enter Into the electric field area.
  • the organic vapor is mostly concentrated in the vicinity of the region which can be ejected from the screening hole 403, there is a similar energy, and thus the organic vapor which is not ejected is concentrated in the region on both sides of the screening hole 403.
  • the recovery system 50 By arranging the recovery system 50 in this area, the organic material in the organic vapor can be recovered to the greatest extent, and can be further purified and reused, thereby improving the utilization rate of the organic material and saving costs.
  • the evaporation apparatus may also include a drive system for driving and controlling the relative motion between the substrate 70 and the screening aperture 403.
  • the moving speed and direction of the substrate 70 can be controlled by the driving system so that the substrate 70 passes through the corresponding region of the screening hole 403 at a constant speed, thereby forming a uniform film layer on the surface of the substrate 70.
  • the evaporation source 10 preferably employs a linear evaporation source; the linear evaporation source may include an evaporation container and a linear heating source.
  • the so-called linear or evaporating container produces linear organic vapor in the case where the linear heating source supplies thermal energy, thereby achieving linear evaporation of the organic material.
  • the evaporation vessel can be made of stainless steel and can contain the desired organic material inside.
  • the linear heating source may be composed of a plurality of coils, and an alternating current voltage of a predetermined frequency is applied to the coil by an alternating current power source disposed outside the evaporation vessel, thereby accurately controlling the heating temperature to ensure uniform heating of the organic material.
  • the vapor deposition apparatus may further include a crystal oscillator 60 located at an exit position of the evaporation source 10 or at an exit position of the screening hole 403.
  • the crystal oscillator 60 is used to stabilize the evaporation rate of the organic vapor.
  • the evaporation apparatus can also include an injection system 20 located between the evaporation source 10 and the power up system 30.
  • the injection system 20 can include a plurality of identical nozzles.
  • the injection system 20 between the evaporation source 10 and the power-up system 30 it is possible to The formed organic vapor enters the power-up device 30 relatively stably, and the organic vapor can also enter the power-up system 30 at a uniform rate by adjusting the pressure of each nozzle.
  • the power-on system 30 in the embodiment of the present invention may adopt the power-on component 80 as shown in FIG. 5.
  • the gas passes through the wire 81, the gas is charged, and the wire can select the hot wire.
  • the organic vapor is charged with a charge by adding a single phase (positive or negative) which can be used to positively or negatively charge the vapor deposition unit.
  • a single phase positive or negative
  • FIG. 6 an example of the power-on component combination 82 in the power-on system of the vapor deposition device provided by the embodiment of the present invention is that the power-up components are combined so as to be entirely above the evaporation source, so that The entire evaporation source is powered.
  • the power-on system used in the embodiment of the present invention is not limited thereto. As long as it is a power-up system that can make the organic vapor positively or negatively charged, it can be used.
  • Embodiments of the present invention also provide an evaporation method based on any of the above vapor deposition devices. As shown in FIG. 4, the method may include the following steps.
  • the evaporation source 10 is heated to generate organic vapor.
  • the rate of the organic vapor can be stabilized by the crystal piece 60.
  • the organic vapor is charged by the power up system 30.
  • the organic vapor can be positively charged or negatively charged as needed.
  • the first direction is the evaporation direction of the evaporation source 10 or the opposite direction of the evaporation direction
  • the second direction is perpendicular to the first direction
  • the third direction is perpendicular to both the first direction and the second direction.
  • the electric steam after the electric steam is energized, it can be accelerated by the electric field, and then deflected by the magnetic field; or the deflection can be realized by the magnetic field first, and then accelerated by the electric field, which is not specifically limited herein.
  • the evaporation method of the vapor deposition device provided by the embodiment of the present invention can be realized; since the rate and flow direction of the organic vapor have certain controllability, the organic vapor can be effectively prevented.
  • the diffusion of organic materials spreads, thereby increasing the utilization of organic materials.
  • the number of cleaning of the baffle is reduced, and the cost is saved.
  • only the substrate 70 needs to be moved during the entire evaporation process to control the relative movement between the substrate 70 and the screening hole 403, so that the evaporation of the organic material can be realized, which can significantly reduce the occupation space of the vapor deposition device.
  • the evaporation source 10 does not directly face the substrate 70, which can also effectively reduce the radiation.
  • control of the rate and flow direction of the organic vapor generated by the evaporation source can be achieved, so that organic vapor having a specific energy is deposited on the surface of the substrate to form a uniform film layer.
  • the rate and flow direction of the organic vapor have certain controllability, the utilization rate of the organic material can be improved, and the chamber pollution caused by the diffusion of the organic material in the organic vapor can be effectively prevented. , thereby reducing the number of times the baffle is cleaned and saving costs.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un dispositif de dépôt en phase vapeur et un procédé de dépôt en phase vapeur. Le dispositif de dépôt en phase vapeur comprend une source d'évaporation (10), un système de charge électrique (30) et un système de commande électromagnétique (40) ; la source d'évaporation (10) est utilisée pour fournir une vapeur organique ; le système de charge électrique (30) est utilisé pour charger la vapeur organique ; et le système de commande électromagnétique (40) est utilisé pour commander le débit et le sens d'écoulement de la vapeur organique chargée et choisir la vapeur organique entrant dans une région prédéterminée et se déplaçant vers une direction prédéterminée pour être déposée sur la surface d'un substrat. Le dispositif de dépôt en phase vapeur peut commander la direction d'écoulement de la vapeur organique, il améliore le taux d'utilisation de la matière organique, il permet d'éviter des contaminations de cavité provoquées par la diffusion de la matière organique, il réduit le nombre de nettoyages des déflecteurs et il diminue les coûts.
PCT/CN2014/094061 2014-09-16 2014-12-17 Dispositif de dépôt en phase vapeur et procédé de dépôt en phase vapeur WO2016041279A1 (fr)

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CN201410472730.1 2014-09-16
CN201410472730.1A CN104294220B (zh) 2014-09-16 2014-09-16 一种蒸镀装置以及蒸镀方法

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Publication number Priority date Publication date Assignee Title
CN110423986A (zh) * 2019-07-24 2019-11-08 福建华佳彩有限公司 一种蒸发源挡板

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CN104651781B (zh) 2015-03-10 2020-03-03 合肥京东方光电科技有限公司 一种有机蒸汽材料的增压喷射沉积装置及方法
CN106148893B (zh) * 2016-08-11 2019-04-05 京东方科技集团股份有限公司 一种蒸镀装置及蒸镀方法、基板
CN107338419B (zh) * 2017-07-31 2019-07-16 京东方科技集团股份有限公司 一种蒸镀速率监测装置及蒸镀设备
CN108165932A (zh) * 2017-12-29 2018-06-15 深圳市华星光电技术有限公司 蒸镀方法及装置
CN108365117A (zh) * 2018-01-31 2018-08-03 昆山国显光电有限公司 封装结构与封装方法及封装结构制备装置
CN108823545B (zh) * 2018-09-07 2020-11-24 京东方科技集团股份有限公司 晶振探头结构和蒸镀装置
CN109107997A (zh) * 2018-09-30 2019-01-01 上海钥熠电子科技有限公司 Oled蒸镀用挡板的干冰清洗装置及其工艺

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000017429A (ja) * 1998-06-26 2000-01-18 Dainippon Printing Co Ltd 真空成膜装置
US20020007796A1 (en) * 2000-04-10 2002-01-24 Gorokhovsky Vladimir I. Filtered cathodic arc deposition method and apparatus
CN1605652A (zh) * 2004-09-09 2005-04-13 复旦大学 一种利用强电场的真空热蒸镀成膜方法
CN102808155A (zh) * 2012-08-01 2012-12-05 东莞宏威数码机械有限公司 电子轰击式蒸发源系统

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI336905B (en) * 2002-05-17 2011-02-01 Semiconductor Energy Lab Evaporation method, evaporation device and method of fabricating light emitting device
CN202705454U (zh) * 2012-08-01 2013-01-30 东莞宏威数码机械有限公司 电子束蒸发源装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000017429A (ja) * 1998-06-26 2000-01-18 Dainippon Printing Co Ltd 真空成膜装置
US20020007796A1 (en) * 2000-04-10 2002-01-24 Gorokhovsky Vladimir I. Filtered cathodic arc deposition method and apparatus
CN1605652A (zh) * 2004-09-09 2005-04-13 复旦大学 一种利用强电场的真空热蒸镀成膜方法
CN102808155A (zh) * 2012-08-01 2012-12-05 东莞宏威数码机械有限公司 电子轰击式蒸发源系统

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110423986A (zh) * 2019-07-24 2019-11-08 福建华佳彩有限公司 一种蒸发源挡板
CN110423986B (zh) * 2019-07-24 2024-04-16 福建华佳彩有限公司 一种蒸发源挡板

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