JP2020066804A - 蒸着装置及びそれを利用した蒸着方法 - Google Patents
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- 238000007740 vapor deposition Methods 0.000 title claims abstract description 194
- 238000000034 method Methods 0.000 title claims description 20
- 230000005684 electric field Effects 0.000 claims abstract description 90
- 239000000758 substrate Substances 0.000 claims abstract description 68
- 239000000463 material Substances 0.000 claims description 98
- 238000000151 deposition Methods 0.000 claims description 83
- 230000008021 deposition Effects 0.000 claims description 74
- 239000010409 thin film Substances 0.000 claims description 18
- 238000000354 decomposition reaction Methods 0.000 claims description 4
- 230000008016 vaporization Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 abstract description 10
- 239000002245 particle Substances 0.000 description 66
- 239000010410 layer Substances 0.000 description 60
- 238000001704 evaporation Methods 0.000 description 58
- 230000008020 evaporation Effects 0.000 description 56
- 238000010438 heat treatment Methods 0.000 description 28
- 101100377798 Arabidopsis thaliana ABCD1 gene Proteins 0.000 description 13
- 101150020779 PXA1 gene Proteins 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 9
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000002346 layers by function Substances 0.000 description 6
- 101100192828 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) PXA2 gene Proteins 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
Claims (15)
- チャンバーと、
前記チャンバー内に配置され、対象基板の安着されるステージと、
前記チャンバー内に配置され、蒸着物質を含む蒸着源と、
前記チャンバー内で前記蒸着源と連結されて前記ステージに向かう方向に前記蒸着物質を噴射する複数のノズルと、
前記複数のノズルと前記ステージとの間に配置され、前記ノズルから噴射される前記蒸着物質を帯電させるイオナイザーと、を含み、
前記イオナイザーに第1電場が形成され、
前記ステージと前記イオナイザーとの間に前記第1電場より小さい第2電場が形成される蒸着装置。 - 前記複数のノズルのそれぞれは、前記複数のノズルのそれぞれの内側面に配置されて前記蒸着物質を帯電させる複数の突出チップを含む請求項1に記載の蒸着装置。
- 前記イオナイザーは、第1電極部と、前記第1電極部と前記ステージとの間に配置され、複数のメッシュ孔が定義される板状を有する第2電極部と、を含み、
前記第1電極部は、板状を有する第1プレートと、前記第1プレートの上に形成され、前記ノズルから噴射された前記蒸着物質を帯電させる複数のピン電極と、を含み、
前記複数のノズルと、前記第2電極部との間に前記第1電場が形成される、
請求項1に記載の蒸着装置。 - 前記ノズルに帯電電圧が印加され、
前記第1電極部に第1電圧が印加され、
前記第2電極部に前記第1電圧及び前記帯電電圧のそれぞれより小さい第2電圧が印加され、
前記ステージに前記第2電圧より小さい第3電圧が印加される請求項3に記載の蒸着装置。 - 前記帯電電圧は前記第1電圧と同じである請求項4に記載の蒸着装置。
- 前記ノズルは前記第1電極部と電気的に接続される請求項4に記載の蒸着装置。
- 前記第1電極部と前記第2電極部との間、または前記ノズルと前記第2電極部との間の距離は、前記第2電極部と前記ステージとの間の距離より短い請求項3に記載の蒸着装置。
- 前記ステージと前記イオナイザーとの間に配置されるマスクを更に含み、
前記マスクから露出される前記対象基板上の領域に前記蒸着物質が蒸着される請求項3に記載の蒸着装置。 - 前記ノズルに帯電電圧が印加され、
前記第1電極部に第1電圧が印加され、
前記第2電極部に前記第1電圧及び前記帯電電圧のそれぞれより小さい第2電圧が印加され、
前記マスクに前記第2電圧より小さい第3電圧が印加される請求項8に記載の蒸着装置。 - 前記対象基板は、ベース層と、前記ベース層の上に配置される複数の薄膜トランジスタと、前記薄膜トランジスタと一対一に対応するように電気的に接続される画素電極と、を含み、
前記画素電極の上に前記蒸着物質が蒸着される請求項3に記載の蒸着装置。 - 前記第1電場の強度は前記蒸着物質のイオン化エネルギー値より大きいか同じであり、前記蒸着物質の分解エネルギー値より小さい請求項1に記載の蒸着装置。
- 対象基板をステージの上に配置するステップと、
蒸着源の蒸着物質を気化させるステップと、
イオナイザー及びノズルに第1電場を形成して前記蒸着物質を帯電させるステップと、
前記対象基板の上に前記蒸着物質を蒸着するステップと、を含み、
前記蒸着物質を蒸着するステップは、
前記イオナイザーと前記ステージとの間に前記第1電場より小さい強度を有する第2電場を形成して前記蒸着物質の移動方向をガイドするステップを含む蒸着方法。 - 前記イオナイザーは、第1電極部と、前記第1電極部と前記ステージとの間に配置され、複数のメッシュ孔が設けられた板状の形状を有する第2電極部と、を含み、
前記第1電極部は、板状を有する第1プレートと、前記第1プレートの上に形成され、前記ノズルから噴射された前記蒸着物質を帯電させる複数のピン電極と、を含む請求項12に記載の蒸着方法。 - 前記ノズルは、複数であって、
前記複数のノズルのそれぞれは、前記複数のノズルのそれぞれの内側面に形成される複数の突出チップを含み、
前記蒸着物質を帯電させるステップは、
前記突出チップに帯電電圧を印加して前記蒸着物質を帯電させるステップを含む請求項12に記載の蒸着方法。 - 前記蒸着物質を帯電させるステップは、
前記第1電極部に第1電圧を印加するステップと、
前記第2電極部に前記第1電圧及び前記帯電電圧それぞれより小さい第2電圧を印加するステップと、を更に含む請求項14に記載の蒸着方法。
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US20200123651A1 (en) | 2020-04-23 |
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