JP2010170982A - 静電チャック及びこれを備えた有機電界発光素子の製造装置 - Google Patents
静電チャック及びこれを備えた有機電界発光素子の製造装置 Download PDFInfo
- Publication number
- JP2010170982A JP2010170982A JP2009165792A JP2009165792A JP2010170982A JP 2010170982 A JP2010170982 A JP 2010170982A JP 2009165792 A JP2009165792 A JP 2009165792A JP 2009165792 A JP2009165792 A JP 2009165792A JP 2010170982 A JP2010170982 A JP 2010170982A
- Authority
- JP
- Japan
- Prior art keywords
- electrostatic chuck
- insulating plate
- unit
- substrate
- discharge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 150000002500 ions Chemical class 0.000 claims abstract description 35
- 238000006386 neutralization reaction Methods 0.000 claims abstract description 5
- 230000007246 mechanism Effects 0.000 claims description 18
- 230000003068 static effect Effects 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 13
- 230000008030 elimination Effects 0.000 claims description 11
- 238000003379 elimination reaction Methods 0.000 claims description 11
- 238000005401 electroluminescence Methods 0.000 claims description 9
- 238000001704 evaporation Methods 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 7
- 238000007664 blowing Methods 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 21
- 230000008569 process Effects 0.000 description 12
- 238000001179 sorption measurement Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 238000005019 vapor deposition process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000007665 sagging Methods 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 210000001520 comb Anatomy 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
【解決手段】本発明の静電チャックは、中心部を貫通する少なくとも1つの開口部を備える絶縁プレートと、前記絶縁プレートに実装される一対の電極と、前記一対の電極に電圧を印加する第1コントローラと、前記絶縁プレートに隣接するように配置され、前記絶縁プレートの一面上に位置する帯電物体の静電荷が除去されるように前記少なくとも1つの開口部にイオンを放出する除電部と、を備える。
【選択図】図1
Description
43 放電部
44 ハウジング
45 空間
43a 単位放電部
44a 絶縁性ノズル本体
46 グランド電極
47 放電電極ホルダ
48 放電電極
52 電源部
54 スイッチング部
56 高電圧発生部
58 マイコン
60 送風部
62 センサ
101 基板
100 有機電界発光素子の製造装置
110 真空チャンバ
120 静電チャック
121 開口部
122 電極パッド
124 放電部
130a 第1コントローラ
130b 第2コントローラ
140 機構部
142 第1機構部
144 第2機構部
150 蒸発源
160 マスク
Claims (20)
- 中心部を貫通する少なくとも1つの開口部を備える絶縁プレートと、
前記絶縁プレートに実装される一対の電極と、
前記一対の電極に電圧を印加する第1コントローラと、
前記絶縁プレートに隣接するように配置され、前記絶縁プレートの一面上に位置する帯電物体の静電荷が除去されるように前記少なくとも1つの開口部にイオンを放出する除電部と
を備える静電チャック。 - 前記少なくとも1つの開口部は、前記絶縁プレートの一方向にストライプ状に延びることを特徴とする請求項1に記載の静電チャック。
- 前記開口部は、前記絶縁プレートの一面上に分散配置されることを特徴とする請求項1に記載の静電チャック。
- 前記一対の電極は、積層構造で配置されることを特徴とする請求項1に記載の静電チャック。
- 前記一対の電極は、同一平面上に配置されることを特徴とする請求項1に記載の静電チャック。
- 前記絶縁プレートは、樹脂又はセラミックからなることを特徴とする請求項1に記載の静電チャック。
- 前記絶縁プレートを支持する板状の支持部材を更に含むことを特徴とする請求項1に記載の静電チャック。
- 前記絶縁プレートと前記支持部材との間にバッファ層を更に含むことを特徴とする請求項7に記載の静電チャック。
- 前記除電部は、コロナ放電により前記イオンを発生させる放電部、及び前記放電部に電圧を印加する第2コントローラを備えることを特徴とする請求項1に記載の静電チャック。
- 前記放電部で発生した前記イオンを前記少なくとも1つの開口部に強制移送する送風部を更に含むことを特徴とする請求項9に記載の静電チャック。
- 前記放電部で発生した陽イオンと陰イオンのバランス状態を検知し、検知された状態に対する出力信号を前記第2コントローラに伝達するセンサを更に含むことを特徴とする請求項9に記載の静電チャック。
- 真空チャンバと、
前記真空チャンバ内で基板を上向式に支持する静電チャックと、
前記真空チャンバに結合され、前記静電チャックを支持して移動させる機構部と
を含み、
前記静電チャックは、
中心部を貫通する少なくとも1つの開口部を備える絶縁プレートと、
前記絶縁プレートに実装される一対の電極と、
前記一対の電極に電圧を印加する第1コントローラと、
前記絶縁プレートに隣接するように配置され、前記絶縁プレートの一面上に位置する帯電物体の静電荷が除去されるように前記少なくとも1つの開口部にイオンを放出する除電部と
を含む有機電界発光素子の製造装置。 - 前記機構部は、前記静電チャックに備えられた絶縁プレートを支持する第1機構部及び前記静電チャックに備えられた除電部を支持する第2機構部を含むことを特徴とする請求項12に記載の有機電界発光素子の製造装置。
- 前記基板の一面に有機物又は金属を蒸着するための蒸発源を更に含むことを特徴とする請求項12に記載の有機電界発光素子の製造装置。
- 前記製造装置は、前記基板の少なくとも一面に有機薄膜及び導電膜のうちの少なくともいずれかを所望のパターンに形成する蒸着装置であることを特徴とする請求項12に記載の有機電界発光素子の製造装置。
- 前記少なくとも1つの開口部は、前記絶縁プレートの一方向にストライプ状に延びることを特徴とする請求項12に記載の有機電界発光素子の製造装置。
- 前記開口部は、前記絶縁プレートの一面上に分散配置されることを特徴とする請求項12に記載の有機電界発光素子の製造装置。
- 前記除電部は、コロナ放電により前記イオンを発生させる放電部、及び前記放電部に電圧を印加する第2コントローラを備えることを特徴とする請求項12に記載の有機電界発光素子の製造装置。
- 前記放電部で発生した前記イオンを前記少なくとも1つの開口部に強制移送する送風部を更に含むことを特徴とする請求項18に記載の有機電界発光素子の製造装置。
- 前記放電部で発生した陽イオンと陰イオンのバランス状態を検知し、検知された状態に対する出力信号を前記第2コントローラに伝達するセンサを更に含むことを特徴とする請求項18に記載の有機電界発光素子の製造装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0006200 | 2009-01-23 | ||
KR1020090006200A KR101001454B1 (ko) | 2009-01-23 | 2009-01-23 | 정전척 및 이를 구비한 유기전계발광 소자의 제조장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010170982A true JP2010170982A (ja) | 2010-08-05 |
JP5222806B2 JP5222806B2 (ja) | 2013-06-26 |
Family
ID=41563262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009165792A Active JP5222806B2 (ja) | 2009-01-23 | 2009-07-14 | 静電チャック及びこれを備えた有機電界発光素子の製造装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8325457B2 (ja) |
EP (1) | EP2211379B1 (ja) |
JP (1) | JP5222806B2 (ja) |
KR (1) | KR101001454B1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013139600A (ja) * | 2011-12-29 | 2013-07-18 | V Technology Co Ltd | 蒸着装置 |
JP2016065318A (ja) * | 2015-11-26 | 2016-04-28 | 株式会社昭和真空 | 成膜装置 |
Families Citing this family (83)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8349116B1 (en) | 2011-11-18 | 2013-01-08 | LuxVue Technology Corporation | Micro device transfer head heater assembly and method of transferring a micro device |
US8518204B2 (en) | 2011-11-18 | 2013-08-27 | LuxVue Technology Corporation | Method of fabricating and transferring a micro device and an array of micro devices utilizing an intermediate electrically conductive bonding layer |
US8573469B2 (en) | 2011-11-18 | 2013-11-05 | LuxVue Technology Corporation | Method of forming a micro LED structure and array of micro LED structures with an electrically insulating layer |
US8794501B2 (en) | 2011-11-18 | 2014-08-05 | LuxVue Technology Corporation | Method of transferring a light emitting diode |
US8646505B2 (en) * | 2011-11-18 | 2014-02-11 | LuxVue Technology Corporation | Micro device transfer head |
US9773750B2 (en) | 2012-02-09 | 2017-09-26 | Apple Inc. | Method of transferring and bonding an array of micro devices |
US9548332B2 (en) | 2012-04-27 | 2017-01-17 | Apple Inc. | Method of forming a micro LED device with self-aligned metallization stack |
US9105492B2 (en) | 2012-05-08 | 2015-08-11 | LuxVue Technology Corporation | Compliant micro device transfer head |
US8415771B1 (en) | 2012-05-25 | 2013-04-09 | LuxVue Technology Corporation | Micro device transfer head with silicon electrode |
US9034754B2 (en) | 2012-05-25 | 2015-05-19 | LuxVue Technology Corporation | Method of forming a micro device transfer head with silicon electrode |
US9030797B2 (en) * | 2012-06-01 | 2015-05-12 | Infineon Technologies Ag | Thin substrate electrostatic chuck system and method |
US8415767B1 (en) | 2012-07-06 | 2013-04-09 | LuxVue Technology Corporation | Compliant bipolar micro device transfer head with silicon electrodes |
US8383506B1 (en) | 2012-07-06 | 2013-02-26 | LuxVue Technology Corporation | Method of forming a compliant monopolar micro device transfer head with silicon electrode |
US8569115B1 (en) | 2012-07-06 | 2013-10-29 | LuxVue Technology Corporation | Method of forming a compliant bipolar micro device transfer head with silicon electrodes |
US8415768B1 (en) | 2012-07-06 | 2013-04-09 | LuxVue Technology Corporation | Compliant monopolar micro device transfer head with silicon electrode |
US8933433B2 (en) | 2012-07-30 | 2015-01-13 | LuxVue Technology Corporation | Method and structure for receiving a micro device |
US8791530B2 (en) | 2012-09-06 | 2014-07-29 | LuxVue Technology Corporation | Compliant micro device transfer head with integrated electrode leads |
US9162880B2 (en) | 2012-09-07 | 2015-10-20 | LuxVue Technology Corporation | Mass transfer tool |
US8835940B2 (en) | 2012-09-24 | 2014-09-16 | LuxVue Technology Corporation | Micro device stabilization post |
US8941215B2 (en) | 2012-09-24 | 2015-01-27 | LuxVue Technology Corporation | Micro device stabilization post |
US9558721B2 (en) | 2012-10-15 | 2017-01-31 | Apple Inc. | Content-based adaptive refresh schemes for low-power displays |
US9178123B2 (en) | 2012-12-10 | 2015-11-03 | LuxVue Technology Corporation | Light emitting device reflective bank structure |
US9159700B2 (en) | 2012-12-10 | 2015-10-13 | LuxVue Technology Corporation | Active matrix emissive micro LED display |
US9255001B2 (en) | 2012-12-10 | 2016-02-09 | LuxVue Technology Corporation | Micro device transfer head array with metal electrodes |
US9029880B2 (en) | 2012-12-10 | 2015-05-12 | LuxVue Technology Corporation | Active matrix display panel with ground tie lines |
US9236815B2 (en) | 2012-12-10 | 2016-01-12 | LuxVue Technology Corporation | Compliant micro device transfer head array with metal electrodes |
US9166114B2 (en) | 2012-12-11 | 2015-10-20 | LuxVue Technology Corporation | Stabilization structure including sacrificial release layer and staging cavity |
US9105714B2 (en) | 2012-12-11 | 2015-08-11 | LuxVue Technology Corporation | Stabilization structure including sacrificial release layer and staging bollards |
US9314930B2 (en) | 2012-12-14 | 2016-04-19 | LuxVue Technology Corporation | Micro pick up array with integrated pivot mount |
US9391042B2 (en) | 2012-12-14 | 2016-07-12 | Apple Inc. | Micro device transfer system with pivot mount |
US9153171B2 (en) | 2012-12-17 | 2015-10-06 | LuxVue Technology Corporation | Smart pixel lighting and display microcontroller |
US9095980B2 (en) * | 2013-02-25 | 2015-08-04 | LuxVue Technology Corporation | Micro pick up array mount with integrated displacement sensor |
US9308649B2 (en) | 2013-02-25 | 2016-04-12 | LuxVue Techonology Corporation | Mass transfer tool manipulator assembly |
US9252375B2 (en) | 2013-03-15 | 2016-02-02 | LuxVue Technology Corporation | Method of fabricating a light emitting diode display with integrated defect detection test |
US8791474B1 (en) | 2013-03-15 | 2014-07-29 | LuxVue Technology Corporation | Light emitting diode display with redundancy scheme |
KR101319785B1 (ko) | 2013-03-18 | 2013-10-18 | 주식회사 야스 | 정전기 부상을 이용한 기판이송장치 |
US9484504B2 (en) | 2013-05-14 | 2016-11-01 | Apple Inc. | Micro LED with wavelength conversion layer |
US9217541B2 (en) | 2013-05-14 | 2015-12-22 | LuxVue Technology Corporation | Stabilization structure including shear release posts |
US9136161B2 (en) | 2013-06-04 | 2015-09-15 | LuxVue Technology Corporation | Micro pick up array with compliant contact |
JP6854643B2 (ja) | 2013-06-12 | 2021-04-07 | ロヒンニ リミテッド ライアビリティ カンパニー | 付着された光発生源を用いたキーボードバックライティング |
US8987765B2 (en) | 2013-06-17 | 2015-03-24 | LuxVue Technology Corporation | Reflective bank structure and method for integrating a light emitting device |
US8928021B1 (en) | 2013-06-18 | 2015-01-06 | LuxVue Technology Corporation | LED light pipe |
US9111464B2 (en) | 2013-06-18 | 2015-08-18 | LuxVue Technology Corporation | LED display with wavelength conversion layer |
US9035279B2 (en) | 2013-07-08 | 2015-05-19 | LuxVue Technology Corporation | Micro device with stabilization post |
US9296111B2 (en) | 2013-07-22 | 2016-03-29 | LuxVue Technology Corporation | Micro pick up array alignment encoder |
WO2015013142A1 (en) | 2013-07-22 | 2015-01-29 | Applied Materials, Inc. | An electrostatic chuck for high temperature process applications |
US9087764B2 (en) | 2013-07-26 | 2015-07-21 | LuxVue Technology Corporation | Adhesive wafer bonding with controlled thickness variation |
JP6423880B2 (ja) | 2013-08-05 | 2018-11-14 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | インシトゥで取り出すことができる静電チャック |
KR101812666B1 (ko) | 2013-08-05 | 2017-12-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 얇은 기판 취급을 위한 정전 캐리어 |
CN105408993A (zh) | 2013-08-06 | 2016-03-16 | 应用材料公司 | 局部加热的多区域基板支撑件 |
US9153548B2 (en) | 2013-09-16 | 2015-10-06 | Lux Vue Technology Corporation | Adhesive wafer bonding with sacrificial spacers for controlled thickness variation |
WO2015042302A1 (en) | 2013-09-20 | 2015-03-26 | Applied Materials, Inc. | Substrate carrier with integrated electrostatic chuck |
US9460950B2 (en) | 2013-12-06 | 2016-10-04 | Applied Materials, Inc. | Wafer carrier for smaller wafers and wafer pieces |
US9367094B2 (en) | 2013-12-17 | 2016-06-14 | Apple Inc. | Display module and system applications |
US9768345B2 (en) | 2013-12-20 | 2017-09-19 | Apple Inc. | LED with current injection confinement trench |
US9450147B2 (en) | 2013-12-27 | 2016-09-20 | Apple Inc. | LED with internally confined current injection area |
US9583466B2 (en) | 2013-12-27 | 2017-02-28 | Apple Inc. | Etch removal of current distribution layer for LED current confinement |
US9542638B2 (en) | 2014-02-18 | 2017-01-10 | Apple Inc. | RFID tag and micro chip integration design |
US9583533B2 (en) | 2014-03-13 | 2017-02-28 | Apple Inc. | LED device with embedded nanowire LEDs |
US9522468B2 (en) | 2014-05-08 | 2016-12-20 | Apple Inc. | Mass transfer tool manipulator assembly with remote center of compliance |
KR20170002607A (ko) | 2014-05-09 | 2017-01-06 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 캐리어 시스템 및 이를 사용하기 위한 방법 |
JP2017515301A (ja) | 2014-05-09 | 2017-06-08 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 保護カバーを有する基板キャリアシステム |
US9318475B2 (en) | 2014-05-15 | 2016-04-19 | LuxVue Technology Corporation | Flexible display and method of formation with sacrificial release layer |
US9959961B2 (en) | 2014-06-02 | 2018-05-01 | Applied Materials, Inc. | Permanent magnetic chuck for OLED mask chucking |
US9741286B2 (en) | 2014-06-03 | 2017-08-22 | Apple Inc. | Interactive display panel with emitting and sensing diodes |
US9624100B2 (en) | 2014-06-12 | 2017-04-18 | Apple Inc. | Micro pick up array pivot mount with integrated strain sensing elements |
US9425151B2 (en) | 2014-06-17 | 2016-08-23 | Apple Inc. | Compliant electrostatic transfer head with spring support layer |
US9570002B2 (en) | 2014-06-17 | 2017-02-14 | Apple Inc. | Interactive display panel with IR diodes |
US9705432B2 (en) | 2014-09-30 | 2017-07-11 | Apple Inc. | Micro pick up array pivot mount design for strain amplification |
US9828244B2 (en) | 2014-09-30 | 2017-11-28 | Apple Inc. | Compliant electrostatic transfer head with defined cavity |
KR102235605B1 (ko) * | 2014-10-08 | 2021-04-06 | 삼성디스플레이 주식회사 | 증착 장치 및 이를 이용한 증착 방법 |
KR102398067B1 (ko) | 2014-11-05 | 2022-05-13 | 삼성디스플레이 주식회사 | 정전 척 |
US9478583B2 (en) | 2014-12-08 | 2016-10-25 | Apple Inc. | Wearable display having an array of LEDs on a conformable silicon substrate |
JP2018518055A (ja) | 2015-06-04 | 2018-07-05 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 透明な静電キャリア |
KR20170039781A (ko) | 2015-10-01 | 2017-04-12 | 삼성디스플레이 주식회사 | 정전척 및 이를 포함하는 기판 처리 장치 |
US10629393B2 (en) | 2016-01-15 | 2020-04-21 | Rohinni, LLC | Apparatus and method of backlighting through a cover on the apparatus |
JP6238097B1 (ja) * | 2016-07-20 | 2017-11-29 | Toto株式会社 | 静電チャック |
CN106626713B (zh) * | 2016-11-17 | 2018-06-01 | 无锡市伟丰印刷机械厂 | 一种用于覆铜板生产的除静电设备 |
US20200083280A1 (en) * | 2018-09-11 | 2020-03-12 | Prilit Optronics, Inc. | Top emission microled display and bottom emission microled display and a method of forming the same |
CN112242277B (zh) * | 2019-07-16 | 2022-03-18 | 清华大学 | 场发射中和器 |
CN112242276B (zh) * | 2019-07-16 | 2022-03-22 | 清华大学 | 场发射中和器 |
US11417557B2 (en) | 2020-12-15 | 2022-08-16 | Entegris, Inc. | Spiraling polyphase electrodes for electrostatic chuck |
CN117127160B (zh) * | 2023-08-30 | 2024-05-28 | 苏州佑伦真空设备科技有限公司 | 一种可大面积镀膜基板装置 |
Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06188305A (ja) * | 1992-12-17 | 1994-07-08 | Tokyo Electron Ltd | 被吸着体の離脱装置および被吸着体の離脱方法およびプラズマ処理装置 |
JPH06267899A (ja) * | 1993-03-16 | 1994-09-22 | Nippon Steel Corp | エッチング装置 |
JPH06302678A (ja) * | 1993-04-09 | 1994-10-28 | Tokyo Electron Ltd | 静電チャック |
JP2002219355A (ja) * | 2000-11-27 | 2002-08-06 | Matsushita Electric Works Ltd | イオン発生装置及びイオン発生装置付きヘアーブラシ |
JP2002222799A (ja) * | 2001-01-25 | 2002-08-09 | Tokyo Electron Ltd | プラズマ処理装置およびそのクリーニング方法および静電チャックの除電方法 |
JP2002313902A (ja) * | 2001-04-18 | 2002-10-25 | Canon Inc | 静電チャック、該静電チャックから基板を離脱する方法 |
JP2003017255A (ja) * | 2001-06-29 | 2003-01-17 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置の製造方法 |
JP2003309156A (ja) * | 2002-04-16 | 2003-10-31 | Ulvac Japan Ltd | 基板除電方法、基板除電装置及び真空処理装置 |
JP2004022979A (ja) * | 2002-06-19 | 2004-01-22 | Shibaura Mechatronics Corp | 吸着ステージおよびそれを用いた基板貼り合せ装置 |
JP2004183044A (ja) * | 2002-12-03 | 2004-07-02 | Seiko Epson Corp | マスク蒸着方法及び装置、マスク及びマスクの製造方法、表示パネル製造装置、表示パネル並びに電子機器 |
JP2004362951A (ja) * | 2003-06-05 | 2004-12-24 | Keyence Corp | 除電器 |
WO2005091356A1 (ja) * | 2004-03-19 | 2005-09-29 | Creative Technology Corporation | 双極型静電チャック |
JP2006228681A (ja) * | 2005-02-21 | 2006-08-31 | National Institute Of Advanced Industrial & Technology | イオン発生器及び除電器 |
JP2007311462A (ja) * | 2006-05-17 | 2007-11-29 | Disco Abrasive Syst Ltd | 静電チャックテーブル機構 |
JP2008198533A (ja) * | 2007-02-14 | 2008-08-28 | Smc Corp | イオナイザ |
JP2008282875A (ja) * | 2007-05-08 | 2008-11-20 | Shinko Electric Ind Co Ltd | 静電チャックおよび静電チャックの製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100238629B1 (ko) * | 1992-12-17 | 2000-01-15 | 히가시 데쓰로 | 정전척을 가지는 재치대 및 이것을 이용한 플라즈마 처리장치 |
JPH06275546A (ja) | 1993-03-24 | 1994-09-30 | Tokyo Electron Ltd | プラズマ処理装置 |
US5474614A (en) * | 1994-06-10 | 1995-12-12 | Texas Instruments Incorporated | Method and apparatus for releasing a semiconductor wafer from an electrostatic clamp |
KR100278180B1 (ko) | 1998-11-05 | 2001-02-01 | 고석태 | 반도체장치 식각설비의 정전척 조립체와 정전척 조립체에 설치되는 절연막 형성 방법 및 정전척 조립체의 제작 방법 |
KR20010091088A (ko) | 2000-03-13 | 2001-10-23 | 윤종용 | 정전 척 |
JP4031419B2 (ja) | 2003-09-19 | 2008-01-09 | 日本碍子株式会社 | 静電チャック及びその製造方法 |
KR100694530B1 (ko) | 2004-12-17 | 2007-03-13 | 주식회사 에이디피엔지니어링 | 기판 합착 장치 |
US20070000441A1 (en) * | 2005-07-01 | 2007-01-04 | Applied Materials, Inc. | Scalable uniform thermal plate |
KR100745153B1 (ko) | 2005-12-22 | 2007-08-01 | 주식회사 래디언테크 | 플라즈마 처리 장치 및 방법 |
KR20080058144A (ko) | 2006-12-21 | 2008-06-25 | 엘지디스플레이 주식회사 | 정전척 및 이를 이용한 평판표시소자의 합착방법 |
JP2008294257A (ja) | 2007-05-25 | 2008-12-04 | Seiko Epson Corp | 半導体基板の脱離方法及び静電チャック装置 |
-
2009
- 2009-01-23 KR KR1020090006200A patent/KR101001454B1/ko active IP Right Grant
- 2009-07-14 JP JP2009165792A patent/JP5222806B2/ja active Active
- 2009-09-28 US US12/585,895 patent/US8325457B2/en active Active
- 2009-11-09 EP EP09175414.3A patent/EP2211379B1/en active Active
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06188305A (ja) * | 1992-12-17 | 1994-07-08 | Tokyo Electron Ltd | 被吸着体の離脱装置および被吸着体の離脱方法およびプラズマ処理装置 |
JPH06267899A (ja) * | 1993-03-16 | 1994-09-22 | Nippon Steel Corp | エッチング装置 |
JPH06302678A (ja) * | 1993-04-09 | 1994-10-28 | Tokyo Electron Ltd | 静電チャック |
JP2002219355A (ja) * | 2000-11-27 | 2002-08-06 | Matsushita Electric Works Ltd | イオン発生装置及びイオン発生装置付きヘアーブラシ |
JP2002222799A (ja) * | 2001-01-25 | 2002-08-09 | Tokyo Electron Ltd | プラズマ処理装置およびそのクリーニング方法および静電チャックの除電方法 |
JP2002313902A (ja) * | 2001-04-18 | 2002-10-25 | Canon Inc | 静電チャック、該静電チャックから基板を離脱する方法 |
JP2003017255A (ja) * | 2001-06-29 | 2003-01-17 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置の製造方法 |
JP2003309156A (ja) * | 2002-04-16 | 2003-10-31 | Ulvac Japan Ltd | 基板除電方法、基板除電装置及び真空処理装置 |
JP2004022979A (ja) * | 2002-06-19 | 2004-01-22 | Shibaura Mechatronics Corp | 吸着ステージおよびそれを用いた基板貼り合せ装置 |
JP2004183044A (ja) * | 2002-12-03 | 2004-07-02 | Seiko Epson Corp | マスク蒸着方法及び装置、マスク及びマスクの製造方法、表示パネル製造装置、表示パネル並びに電子機器 |
JP2004362951A (ja) * | 2003-06-05 | 2004-12-24 | Keyence Corp | 除電器 |
WO2005091356A1 (ja) * | 2004-03-19 | 2005-09-29 | Creative Technology Corporation | 双極型静電チャック |
JP2006228681A (ja) * | 2005-02-21 | 2006-08-31 | National Institute Of Advanced Industrial & Technology | イオン発生器及び除電器 |
JP2007311462A (ja) * | 2006-05-17 | 2007-11-29 | Disco Abrasive Syst Ltd | 静電チャックテーブル機構 |
JP2008198533A (ja) * | 2007-02-14 | 2008-08-28 | Smc Corp | イオナイザ |
JP2008282875A (ja) * | 2007-05-08 | 2008-11-20 | Shinko Electric Ind Co Ltd | 静電チャックおよび静電チャックの製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013139600A (ja) * | 2011-12-29 | 2013-07-18 | V Technology Co Ltd | 蒸着装置 |
JP2016065318A (ja) * | 2015-11-26 | 2016-04-28 | 株式会社昭和真空 | 成膜装置 |
Also Published As
Publication number | Publication date |
---|---|
EP2211379A1 (en) | 2010-07-28 |
KR101001454B1 (ko) | 2010-12-14 |
JP5222806B2 (ja) | 2013-06-26 |
KR20100086790A (ko) | 2010-08-02 |
US20100188794A1 (en) | 2010-07-29 |
US8325457B2 (en) | 2012-12-04 |
EP2211379B1 (en) | 2013-10-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5222806B2 (ja) | 静電チャック及びこれを備えた有機電界発光素子の製造装置 | |
JP5623598B2 (ja) | 蒸着装置、蒸着方法、並びに、有機エレクトロルミネッセンス表示装置の製造方法 | |
US9580791B2 (en) | Vapor deposition mask, and manufacturing method and manufacturing device for organic EL element using vapor deposition mask | |
KR101538870B1 (ko) | 증착 방법, 증착 장치 및 유기 el 표시 장치 | |
JP5612156B2 (ja) | 蒸着方法、蒸着装置、及び有機el表示装置 | |
JP5291839B2 (ja) | 蒸着装置及び蒸着方法 | |
CN103238374B (zh) | 蒸镀装置、蒸镀方法和有机el显示装置 | |
JP6429491B2 (ja) | 蒸着装置用マスク、蒸着装置、蒸着方法、及び、有機エレクトロルミネッセンス素子の製造方法 | |
US9234270B2 (en) | Electrostatic chuck, thin film deposition apparatus including the electrostatic chuck, and method of manufacturing organic light emitting display apparatus by using the thin film deposition apparatus | |
US9614155B2 (en) | Vapor deposition apparatus, vapor deposition method, and method for producing organic electroluminescent element | |
JP5557653B2 (ja) | 薄膜蒸着装置及びこれを利用した有機発光ディスプレイ装置の製造方法 | |
KR20110015930A (ko) | 열전사 공정에 이용되는 전사장치 | |
JP2006221911A (ja) | 成膜用マスク、成膜用マスクの準備方法、自発光素子の製造装置及び製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110518 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110524 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110819 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111004 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111226 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120403 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120726 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20120802 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A712 Effective date: 20120924 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121030 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130130 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130219 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130311 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160315 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5222806 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |