WO2016017700A1 - 洗浄装置 - Google Patents
洗浄装置 Download PDFInfo
- Publication number
- WO2016017700A1 WO2016017700A1 PCT/JP2015/071519 JP2015071519W WO2016017700A1 WO 2016017700 A1 WO2016017700 A1 WO 2016017700A1 JP 2015071519 W JP2015071519 W JP 2015071519W WO 2016017700 A1 WO2016017700 A1 WO 2016017700A1
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- WIPO (PCT)
- Prior art keywords
- dissolution tank
- water
- cleaning
- liquid
- ozone
- Prior art date
Links
- 238000005406 washing Methods 0.000 title abstract description 17
- 238000004090 dissolution Methods 0.000 claims abstract description 80
- 239000007788 liquid Substances 0.000 claims abstract description 78
- 238000006073 displacement reaction Methods 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 154
- 238000004140 cleaning Methods 0.000 claims description 104
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 88
- 238000002347 injection Methods 0.000 claims description 46
- 239000007924 injection Substances 0.000 claims description 46
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 11
- 239000004973 liquid crystal related substance Substances 0.000 claims description 3
- 230000003749 cleanliness Effects 0.000 abstract description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract 1
- 229910052731 fluorine Inorganic materials 0.000 abstract 1
- 239000011737 fluorine Substances 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 46
- 125000006850 spacer group Chemical group 0.000 description 13
- 238000000034 method Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 10
- 239000004810 polytetrafluoroethylene Substances 0.000 description 10
- 239000002245 particle Substances 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- -1 polytetrafluoroethylene Polymers 0.000 description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910021645 metal ion Inorganic materials 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000010828 elution Methods 0.000 description 2
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 2
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229920001774 Perfluoroether Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/20—Mixing gases with liquids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/20—Mixing gases with liquids
- B01F23/21—Mixing gases with liquids by introducing liquids into gaseous media
- B01F23/213—Mixing gases with liquids by introducing liquids into gaseous media by spraying or atomising of the liquids
- B01F23/2132—Mixing gases with liquids by introducing liquids into gaseous media by spraying or atomising of the liquids using nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/20—Mixing gases with liquids
- B01F23/23—Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids
- B01F23/232—Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids using flow-mixing means for introducing the gases, e.g. baffles
- B01F23/2326—Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids using flow-mixing means for introducing the gases, e.g. baffles adding the flowing main component by suction means, e.g. using an ejector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
- B01F25/10—Mixing by creating a vortex flow, e.g. by tangential introduction of flow components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
- B01F25/20—Jet mixers, i.e. mixers using high-speed fluid streams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
- B01F25/20—Jet mixers, i.e. mixers using high-speed fluid streams
- B01F25/21—Jet mixers, i.e. mixers using high-speed fluid streams with submerged injectors, e.g. nozzles, for injecting high-pressure jets into a large volume or into mixing chambers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
- B01F25/60—Pump mixers, i.e. mixing within a pump
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F33/00—Other mixers; Mixing plants; Combinations of mixers
- B01F33/80—Mixing plants; Combinations of mixers
- B01F33/834—Mixing in several steps, e.g. successive steps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F23/00—Mixing according to the phases to be mixed, e.g. dispersing or emulsifying
- B01F23/20—Mixing gases with liquids
- B01F23/23—Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids
- B01F23/237—Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids characterised by the physical or chemical properties of gases or vapours introduced in the liquid media
- B01F23/2376—Mixing gases with liquids by introducing gases into liquid media, e.g. for producing aerated liquids characterised by the physical or chemical properties of gases or vapours introduced in the liquid media characterised by the gas being introduced
- B01F23/23761—Aerating, i.e. introducing oxygen containing gas in liquids
- B01F23/237613—Ozone
Definitions
- the present invention relates to a cleaning apparatus used in, for example, a semiconductor cleaning process.
- the RCA cleaning method is a Si substrate wet cleaning method based on cleaning with ammonia / hydrogen peroxide solution (SC1) and cleaning with hydrochloric acid / hydrogen peroxide solution (SC2).
- Patent Document 1 discloses a semiconductor wafer cleaning system including a cleaning device that cleans a semiconductor wafer with ozone water and an ozone water manufacturing device that supplies ozone water to the cleaning device.
- the present inventors have discovered that by generating microbubbles in water in which ozone is dissolved, the ozone concentration of ozone water can be maintained high over a long period of time, and an invention relating to an apparatus for producing ozone water has been filed so far. (For example, refer to JP2012-101222A).
- microbubble ozone water water obtained by generating microbubbles in water in which ozone is dissolved
- microbubble ozone water water obtained by generating microbubbles in water in which ozone is dissolved
- metal materials are used in wetted parts such as pipes, tanks, valves, pumps, etc., and metal ions may be eluted into water. Further, metal debris generated at the sliding portion, foreign matter generated due to metal corrosion, etc. may be mixed in the water. Therefore, it is difficult to apply ozone water manufactured using a conventional ozone water manufacturing apparatus to a semiconductor cleaning process that requires extremely high cleanliness.
- ozone is sucked together with water by a centrifugal pump (for example, a spiral pump), and water and ozone are mixed by the stirring force of the impeller.
- a centrifugal pump for example, a spiral pump
- water and ozone are mixed by the stirring force of the impeller.
- a metal material is used for the shaft portion of the impeller of the centrifugal pump, it has been difficult to avoid the problem of contamination of the cleaning water due to elution of metal ions or contamination of foreign matters.
- the present invention has been made in view of the above problems, and an object thereof is to provide a cleaning apparatus capable of obtaining a cleaning liquid having high cleanliness.
- Means for solving the problems are the following inventions.
- the transfer pump is a positive displacement pump;
- a cleaning device in which the parts of the dissolution tank, the transfer pump, and the supply nozzle that are in contact with the liquid are made of fluororesin.
- the supply nozzle is preferably a microbubble generating nozzle.
- the gas is preferably ozone.
- the liquid is preferably water.
- the transfer pump is a diaphragm pump, It is preferable that the diaphragm of the diaphragm pump is formed of a fluororesin.
- An injection pipe is installed inside the dissolution tank, It is preferable that an injection hole for injecting the liquid sent by the positive displacement pump toward the inner wall of the dissolution tank is provided on the outer periphery of the injection pipe.
- Two injection holes are provided on the outer periphery of the injection pipe,
- the two injection holes are preferably provided at positions separated from each other by approximately 90 degrees on the outer periphery of the injection pipe.
- a gas discharge valve for discharging the gas accumulated in the dissolution tank to the outside is installed at the upper part of the dissolution tank.
- a liquid level gauge for measuring the height of the liquid level of the liquid stored in the dissolution tank, It is preferable to provide control means for controlling the gas discharge valve so that the height of the liquid level measured by the liquid level gauge is constant.
- control means controls the gas discharge valve so that the height of the liquid level measured by the liquid level gauge is 1 mm or more and 20 mm or less from the upper bottom of the dissolution tank.
- the object is preferably a semiconductor wafer, a liquid crystal substrate, or a solar cell substrate.
- FIG. 2 is a cross-sectional view of the dissolution tank shown in FIG. 1 taken along line AA. It is sectional drawing of a supply nozzle. It is a flowchart of the washing
- FIG. 1 is a flowchart of the cleaning apparatus according to the first embodiment.
- FIG. 2 is a plan view of the cleaning device.
- FIG. 3 is a front view of the cleaning device.
- FIG. 4 is a side view of the cleaning device.
- the cleaning apparatus 10 includes a dissolution tank 20 for dissolving ozone (O 3 ) in water, and a transfer pump 30 for feeding ozone (O 3 ) into the dissolution tank 20 together with water. And a supply nozzle 40 for supplying water stored in the dissolution tank 20 to the object W.
- the parts of the dissolution tank 20, the transfer pump 30, and the supply nozzle 40 that are in contact with water are made of fluororesin.
- the dissolution tank 20 is a cylindrical sealed tank formed of a steel material such as stainless steel, and the inside thereof can be held at a high pressure. All parts of the dissolution tank 20 that come into contact with water are made of fluororesin. Specifically, the entire inner surface of the dissolution tank 20 is made of fluororesin or is lined with fluororesin.
- fluororesin examples include polytetrafluoroethylene (PTFE), polychlorotrifluoroethylene (PCTFE), perfluoroalkoxy fluororesin (PFA), tetrafluoroethylene / hexafluoropropylene copolymer (FEP), ethylene Tetrafluoroethylene copolymer (ETFE), ethylene / chlorotrifluoroethylene copolymer (ECTFE), or the like can be used.
- PTFE polytetrafluoroethylene
- PCTFE polychlorotrifluoroethylene
- PFA perfluoroalkoxy fluororesin
- FEP tetrafluoroethylene / hexafluoropropylene copolymer
- ETFE ethylene Tetrafluoroethylene copolymer
- ECTFE chlorotrifluoroethylene copolymer
- the transfer pump 30 is not a non-displacement pump such as a centrifugal pump but a positive displacement pump.
- a positive displacement pump is a pump which raises the pressure of the liquid in the space by changing the volume of the space.
- the positive displacement pump includes a reciprocating type and a rotary type, and examples thereof include a diaphragm pump, a gear pump, a piston pump, and a plunger pump. Although any positive displacement pump can be used as the transfer pump 30 of the present invention, it is preferable to use a diaphragm pump.
- the part of the transfer pump 30 that comes into contact with water is made of fluororesin.
- at least the inner surface of the casing of the transfer pump 30 is lined with a fluororesin.
- the casing itself is made of a fluororesin.
- the operating member disposed inside the casing is also formed of a fluororesin.
- the transfer pump 30 is a diaphragm pump
- the diaphragm is formed of a fluororesin.
- the transfer pump 30 is a gear pump
- the gear is formed of a fluororesin.
- the transfer pump 30 is a piston pump
- the piston is made of a fluororesin.
- the transfer pump 30 is a plunger pump
- the plunger is formed of a fluororesin.
- the fluororesin any of the fluororesins described above can be used, but polytetrafluoroethylene (PTFE) is preferably used.
- the supply nozzle 40 is a nozzle for supplying the cleaning water stored in the dissolution tank 20 to the object W.
- a microbubble generating nozzle is used as the supply nozzle 40.
- bubbles (microbubbles) having a particle size of 1 to 50 ⁇ m, for example, can be generated in the cleaning water in which ozone is dissolved.
- the supply nozzle 40 may be, for example, an injection nozzle that can inject water stored in the dissolution tank 20 onto the object W. Details of the supply nozzle 40 will be described later.
- microbubbles can be generated in the wash water in which ozone is dissolved.
- the microbubble means, for example, a bubble having a particle size of 1 ⁇ m or more and 50 ⁇ m or less.
- the number of microbubbles in the liquid can be measured by, for example, a liquid particle counter “LiQuilaz-E20” manufactured by Particle® Measuring Systems. For the measurement of the number of microbubbles in the liquid, it is preferable to use a light shielding liquid particle counter.
- All the bubbles generated by the supply nozzle 40 need not be microbubbles.
- 30% or more, more preferably 50% or more, further preferably 70% or more, and most preferably 90% or more of the bubbles generated by the supply nozzle 40 are microbubbles.
- the suction port of the transfer pump 30 is connected to the pure water tank 12 via the pipe 14.
- the transfer pump 30 can suck the pure water stored in the pure water tank 12 and send it to the dissolution tank 20.
- the suction port of the transfer pump 30 is also connected to an ozone generator (not shown) via a pipe 15 branched from the pipe 14.
- the transfer pump 30 can suck ozone generated by the ozone generator through the pipe 15. That is, the transfer pump 30 can suck ozone together with the pure water through the pipe 14 and the pipe 15. The sucked pure water and ozone are mixed inside the transfer pump 30 and then fed into the dissolution tank 20.
- the end opposite to the side connected to the transfer pump 30 is inserted into the pure water of the pure water tank 12.
- a cup 16 having one large opening in a trumpet shape is attached to the end of the pipe 14 on the side inserted into the pure water.
- the cup 16 can collect ozone gas blown into pure water. That is, the transfer pump 30 can not only suck ozone gas through the pipe 15 but also suck ozone gas blown into the pure water tank 12 through the pipe 17.
- the cup 16 is preferably formed of a fluororesin.
- An injection pipe 21 for injecting water fed by the transfer pump 30 toward the inner wall of the dissolution tank 20 is installed inside the dissolution tank 20.
- the injection pipe 21 is installed substantially vertically, and extends almost entirely from the lower bottom portion to the upper bottom portion of the dissolution tank 20.
- the upper end portion of the injection pipe 21 is closed.
- Two injection holes 22 a and 22 b are provided in a portion slightly below the upper end of the injection pipe 21. Details of the two injection holes 22a and 22b will be described later.
- the injection pipe 21 is preferably formed of a fluororesin.
- the discharge port of the transfer pump 30 is connected to the lower end of the injection pipe 21 via the pipe 18.
- the pure water and ozone gas boosted by the transfer pump 30 are supplied to the lower end portion of the injection pipe 21, and then toward the inner wall of the dissolution tank 20 from the two injection holes 22 a and 22 b formed in the upper portion of the injection pipe 21. Be injected. Note that, during the normal operation of the cleaning device 10, the two injection holes 22 a and 22 b are located below the liquid level 20 a of the dissolution tank 20.
- a liquid level gauge 23 capable of measuring the height of the liquid level 20a of water stored in the dissolution tank is installed inside the dissolution tank 20.
- the liquid level gauge 23 may be of any type, but in this embodiment, a guide pulse type liquid level gauge is used.
- the portion of the liquid level gauge 23 that comes into contact with water is preferably formed of a fluororesin or lined with a fluororesin. Specifically, it is preferable that the contact (probe) that contacts the water of the level gauge 23 is covered with a fluororesin.
- FIG. 5 is a cross-sectional view of the dissolution tank 20 shown in FIG.
- a liquid level gauge 23 is installed at the center of the dissolution tank 20, and an injection pipe 21 is installed at a position near the wall surface of the dissolution tank 20.
- an injection pipe 21 is installed at a position near the wall surface of the dissolution tank 20.
- two injection holes 22a and 22b are provided at positions separated by approximately 90 degrees in the circumferential direction. That is, the size of the central angle obtained by connecting the center of the injection pipe 21 and the two injection holes 22a and 22b is approximately 90 degrees.
- the two injection holes 22a and 22b are provided at positions separated by 70 to 110 degrees, preferably 80 to 100 degrees, more preferably 85 to 95 degrees in the circumferential direction.
- water and ozone gas are injected from the injection pipe 21 in the direction opposite to the liquid level gauge 23. That is, in FIG. 5, two injection pipes 21 are formed by a straight line perpendicular to a line connecting the center point of the liquid level gauge 23 and the center point of the injection pipe 21, and passing through the center point of the injection pipe 21. Divided into regions. By not providing an injection hole in the region closer to the liquid level gauge 23 of these two areas, water and ozone gas may hit the liquid level gauge 23 and affect the measurement value of the liquid level gauge 23. It is prevented.
- a gas release valve 24 for releasing ozone gas accumulated above the liquid level 20a in the dissolution tank 20 to the outside is installed.
- the gas release valve 24 an air operated valve is preferably used. This is because when the solenoid valve is used, the metal part of the solenoid valve may corrode and foreign matter or the like may be mixed into the cleaning water in the dissolution tank 20.
- the valves 14, 15, 17, 18, and 25 for connecting a plurality of devices included in the cleaning device 10 are not provided with valves. This is because the use of air-operated valves for these pipes in terms of the configuration of the cleaning device 10 is not technically significant, and if an electromagnetic valve is used, the above-mentioned foreign matter may be mixed. .
- an adjustment valve capable of adjusting the gas flow rate may be used, or an on-off valve whose opening degree can be switched only between 100% and 0% may be used.
- a ball valve, a ball valve, a diaphragm valve, or the like can be used. Among these, it is preferable to use a diaphragm valve. Further, as the gas release valve 24, it is preferable to use a valve in which a pipe portion is formed of a fluororesin.
- the cleaning device 10 includes a control means 60.
- the control means 60 is electrically connected to the gas discharge valve 24 and the liquid level gauge 23.
- the control means 60 can control the gas discharge valve 24 so that the height of the liquid level 20a measured by the liquid level gauge 23 is constant.
- the control means 60 compares the height of the liquid level 20a measured by the liquid level gauge 23 with a preset target value, and controls the gas release valve 24 based on the comparison result.
- a known control device capable of controlling an actuator such as a valve can be used, and for example, a sequencer can be used.
- the gas release valve 24 is completely closed (opening degree 0%).
- the gas release valve 24 is closed to some extent (opening degree 30%).
- the gas release valve 24 is opened to some extent (opening degree 70%).
- the gas release valve 24 is completely opened (opening degree 100%).
- the dissolution tank 20 is connected to a supply nozzle 40 via a pipe 25. Since the inside of the dissolution tank 20 is at a high pressure (for example, 0.4 MPa) by the transfer pump 30, the cleaning water is ejected vigorously from the supply nozzle 40.
- the pressure inside the dissolution tank 20 can be adjusted by the discharge pressure of the transfer pump 30. Alternatively, the pressure inside the dissolution tank 20 can be adjusted by opening and closing the gas discharge valve 24.
- the pipes 14, 15, 17, 18, 25 for connecting a plurality of devices included in the cleaning apparatus 10 are made of a fluororesin.
- a fluororesin any of the fluororesins described above can be used, but polytetrafluoroethylene (PTFE) is preferably used.
- FIG. 6 is a cross-sectional view of the supply nozzle 40.
- the supply nozzle 40 includes a cylindrical outer member 42 having one end closed by a wall 42a and the other end opened, and a cylinder having one end closed by a wall 44a and the other end opened.
- a cylindrical inner member 44 is provided.
- the inner diameter of the outer member 42 is larger than the outer diameter of the inner member 44.
- the inner member 44 is disposed in the outer member 42 so that its axis coincides.
- the supply nozzle 40 includes a connector 46 formed in a substantially cylindrical shape.
- One end 46 a of the connector 46 is connected to a pipe 25 having one end connected to the dissolution tank 20.
- a cylindrical recess 46 c is formed at the other end 46 b of the connector 46.
- the open end of the inner member 44 is fitted into the recess 46c.
- An end portion of the outer member 42 on the side where the outer member 42 is opened is fitted into the outer peripheral portion of the end portion 46 b of the connector 46.
- the outer member 42, the inner member 44, and the connector 46 are integrally assembled with each other by screwing or the like.
- an orifice 48 Inside the inner member 44, an orifice 48, three perforated plates 50a to 50c, and seven spacers 52a to 52g are arranged. These members are arranged in the order of the orifice 48, the spacer 52a, the spacer 52b, the spacer 52c, the spacer 52d, the porous plate 50a, the spacer 52e, the porous plate 50b, the spacer 52f, the porous plate 50c, and the spacer 52g from the upstream side. Yes.
- the number of perforated plates is not limited to three.
- the number of perforated plates may be adjusted in the range of 1 to 6 according to the water quality and the like. By adjusting the number of perforated plates, it is possible to generate bubbles suitable for the intended work.
- the orifice 48 is a disc having a predetermined thickness, and a hole is formed in the center thereof.
- the spacers 52a, 52e, and 52f are discs having a predetermined thickness (for example, 2.0 mm).
- the spacers 52b, 52c, 52d, and 52g are discs having a predetermined thickness (for example, 1.0 mm).
- the perforated plates 50a and 50c are discs having a plurality of small holes (for example, ⁇ 1.0 mm).
- the perforated plate 50b is a disc having a plurality of small holes (for example, ⁇ 0.5 mm).
- the spacer is preferably installed between the perforated plate and the perforated plate.
- a space of 3 mm to 5 mm can be provided between the perforated plate and the perforated plate.
- These components constituting the supply nozzle 40 are preferably made of a fluororesin. That is, the outer member 42, the inner member 44, the connector 46, the orifice 48, the three porous plates 50a to 50c, and the seven spacers 52a to 52g are preferably made of a fluororesin.
- the fluororesin any of the fluororesins described above can be used, but polytetrafluoroethylene (PTFE) is preferably used.
- a first pressure release chamber 54 is formed between the wall 44 a of the inner member 44 and the spacer 52 g, and a plurality of through holes 56 are formed in the peripheral wall of the first pressure release chamber 54.
- a second pressure release chamber 57 is formed between the inner wall surface of the outer member 42 and the outer wall surface of the inner member 44.
- a substantially circular nozzle hole 58 for supplying water containing microbubbles is formed in the wall 42 a of the outer member 42.
- the water sent from the dissolution tank 20 through the pipe 25 passes through the orifice 48 after passing through the inside of the connector 46. Due to the pressure difference between the upstream and downstream of the orifice 48, part of the ozone dissolved in the water becomes bubbles and bubbles are generated.
- the water After passing through the orifice 48, the water passes through the porous plate 50a, the porous plate 50b, and the porous plate 50c.
- These perforated plates have a plurality of small holes.
- the sizes of the small holes are ⁇ 1.0 mm, ⁇ 0.5 mm, and ⁇ 1.0 mm in order from the upstream side. That is, the sizes of the small holes in the adjacent perforated plates are different from each other.
- Water passes through the through hole 56 and hits the inner wall surface of the outer member 42.
- the particle size of the bubbles is further reduced.
- the water that has flowed into the second pressure release chamber 57 is supplied from the nozzle hole 58 toward the object W.
- the water supplied from the nozzle hole 58 contains bubbles (microbubbles) whose particle size is reduced to 1 to 50 ⁇ m by the mechanism described above.
- a metal material is used in a portion that comes into contact with water, such as a tank, a pipe, a valve, and a pump. For this reason, metal ions may be eluted in pure water, or foreign matter generated by metal corrosion may be mixed in the cleaning water.
- the parts of the dissolution tank 20, the transfer pump 30, and the supply nozzle 40 that come into contact with water are formed of fluororesin. Thereby, elution of metal ions and mixing of foreign substances are prevented, so that cleaning water with higher cleanliness can be obtained.
- the portions of the pipes 14, 15, 17, 18, 25, the cup 16, the injection pipe 21, and the liquid level gauge 23 that come into contact with water are also made of fluororesin. This more effectively prevents the cleaning water from being contaminated by the metal.
- the transfer pump 30 is a diaphragm pump
- the diaphragm is formed of a fluororesin. This more effectively prevents the cleaning water from being contaminated by the metal.
- the pure water sucked from the pure water tank 12 by the transfer pump 30 is sent to the dissolution tank 20.
- the inside of the dissolution tank 20 is maintained at a high pressure. Specifically, the pressure in the space 20b above the liquid level 20a of the dissolution tank 20 is maintained at 0.2 to 0.6 MPa, preferably 0.3 to 0.5 MPa, more preferably 0.4 MPa. . Thereby, a larger amount of ozone gas can be dissolved in water inside the dissolution tank 20. Further, a larger amount of microbubbles can be generated in the supply nozzle 40.
- the transfer pump 30 is, for example, a diaphragm pump
- fluctuation occurs in the pressure of water transferred by the diaphragm pump.
- the amount of cleaning water supplied from the supply nozzle 40 is not constant, there is a problem that uneven cleaning occurs when the cleaning water is used for cleaning a semiconductor wafer or the like.
- a positive displacement pump diaphragm pump
- the space 20b is secured above the liquid level 20a of the dissolution tank 20, and pressure fluctuations caused by the transfer pump 30 can be absorbed by the space 20b. Therefore, even when a positive displacement pump is used as a pump for feeding water and ozone, the amount of cleaning water supplied from the supply nozzle 40 is kept constant.
- the height of the liquid surface 20a of the dissolution tank 20 is 1 mm or more and 100 mm or less, preferably 1 mm or more and 70 mm or less, more preferably 1 mm or more and 50 mm or less, more preferably 1 mm or more and 30 mm or less from the upper bottom 20c of the dissolution tank 20. Preferably, it is maintained at 1 mm or more and 20 mm or less.
- the height of the liquid level 20a is at a position higher than 1 mm from the upper base 20c, the volume of the space 20b is too small to sufficiently absorb the pressure fluctuation caused by the transfer pump 30.
- the height of the liquid level 20a is below 100 mm from the upper base 20c, the volume of the space 20b is too large, and it is difficult to control the flow rate of the cleaning water supplied from the supply nozzle 40 to be constant. Become.
- the height of the liquid level 20a measured by the liquid level gauge 23 is 1 mm or more and 100 mm or less, preferably 1 mm or more and 70 mm or less, more preferably 1 mm or more and 50 mm or less. Further, it is preferable to control the gas release valve 24 so that it is more preferably 1 mm to 30 mm, and most preferably 1 mm to 20 mm. The method of controlling the gas discharge valve 24 so that the height of the liquid level 20a is constant is as described above.
- the cleaning apparatus 10 of this embodiment it is possible to supply cleaning water with extremely high cleanliness to the object W.
- the washing water contains microbubbles, and the microbubbles remain in the washing water for a long time.
- the cleaning effect by ozone and microbubbles is enormous, and the object W can be cleaned extremely highly.
- FIG. 7 is a flowchart of the cleaning apparatus according to the second embodiment of the present invention.
- the same elements as those in the first embodiment are denoted by the same reference numerals.
- the return pipe 26 for returning the cleaning water stored in the dissolution tank 20 to the pure water tank 12.
- the end of the return pipe 26 is inserted into pure water stored in the pure water tank 12.
- a supply nozzle 41 for generating microbubbles is attached to the end of the return flow pipe 26 that is inserted into the pure water.
- the return pipe 26 and the supply nozzle 41 are made of a fluororesin.
- the cleaning water stored in the dissolution tank 20 can be returned to the pure water tank 12 via the return pipe 26.
- the cleaning water can be circulated between the dissolution tank 20 and the pure water tank 12 until the concentration of the gas in the cleaning water or the concentration of the microbubbles reaches a predetermined value.
- a temperature control device 27 for controlling the temperature of the washing water may be installed in the middle of the pipe 25.
- the temperature control device 27 can control the temperature of the cleaning water fed into the supply nozzle 40 to an arbitrary temperature.
- the temperature of the washing water sent to the supply nozzle 40 can be heated (or cooled) to a temperature effective for washing the object W.
- the cleaning device 10 is a device that cleans the object W with microbubble ozone water.
- the object W include, but are not limited to, a semiconductor wafer, a liquid crystal substrate, a solar cell substrate, a glass substrate, a mask blank, and the like that require a high degree of cleaning.
- the cleaning apparatus 10 of the present invention may be applicable to, for example, the medical field (internal cleaning, etc.) in addition to cleaning semiconductor wafers and the like.
- the present invention can be applied even when other gases are dissolved in water.
- the present invention can be applied even if the gas dissolved in water is oxygen (O 2 ), hydrogen peroxide (H 2 O 2 ), nitrogen (N 2 ), hydrogen (H 2 ), or the like.
- the present invention can be applied even when carbon dioxide and ozone are dissolved in water. When carbon dioxide and ozone are dissolved in water, the dissolved time of ozone in the ozone water can be extended.
- the present invention can also be applied to other liquids.
- the present invention can be applied to liquids such as organic solvents, aqueous sulfuric acid solutions, aqueous ammonia solutions, and slurries.
- the number of the supply nozzles 40 provided in the cleaning device 10 is one is shown, but the number of the supply nozzles 40 may be two or more.
- FIG. 8 is a flowchart of the cleaning apparatus according to the third embodiment of the present invention.
- the same elements as those in the first and second embodiments are denoted by the same reference numerals.
- the 8 includes a return pipe 104 for returning ozone water (wash water) stored in the dissolution tank 20 to the circulation tank 102.
- the ozone water stored in the dissolution tank 20 can circulate between the dissolution tank 20 and the circulation tank 102 via the return pipe 104. By circulating ozone water between the dissolution tank 20 and the circulation tank 102, the concentration of ozone water in the dissolution tank 20 can be increased.
- the circulation tank 102 is connected to a pure water supply pipe 106 for supplying pure water to the circulation tank 102.
- a cleaning apparatus 100 illustrated in FIG. 8 includes an ozone production apparatus 105.
- the ozone water stored in the circulation tank 102 is sent to the lower part of the dissolution tank 20 by the transfer pump 30.
- Ozone (O 3 ) produced by the ozone production apparatus 105 is sent to the lower part of the dissolution tank 20 by the transfer pump 30 together with the ozone water stored in the circulation tank 102. Thereby, the concentration of ozone water in the dissolution tank 20 can be further increased.
- the cleaning apparatus 100 shown in FIG. 8 includes a heater 108 for heating ozone water.
- the heater 108 is installed at a position immediately before the supply nozzle 40. That is, the heater 108 can heat the ozone water immediately before the ozone water produced in the dissolution tank 20 is supplied to the object W. Thereby, it can suppress that the density
- the heating effect of ozone water can be further enhanced by heating the ozone water with the heater 108.
- the heating temperature of the ozone water by the heater 108 is, for example, 30 ° C. or higher and 80 ° C. or lower, preferably 40 ° C. or higher and 70 ° C. or lower, and more preferably 50 ° C. or higher and 60 ° C. or lower.
- Any type of heater can be used as the heater 108 for heating the ozone water.
- the heater 108 for heating the ozone water for example, “Super Clean Heater” manufactured by Technovision Co., Ltd. can be used.
- the cleaning apparatus 100 shown in FIG. 8 includes a supply nozzle 40 for supplying cleaning water (ozone water) to the object W.
- the supply nozzle 40 is installed so that the discharge direction of ozone water may turn sideways (horizontal direction). By installing the supply nozzle 40 sideways, it is possible to prevent the ozone water remaining in the supply nozzle 40 from falling on the object W when the supply of the ozone water is stopped. Thereby, the supply time of the ozone water to the target object W can be controlled precisely.
- the direction of the ozone water discharged from the supply nozzle 40 may be upward (vertical direction) or sideways ( It may be an arbitrary angle from the horizontal direction) to the upward direction (vertical direction). These can be achieved by making the direction of the supply nozzle 40 coincide with the discharge direction of the ozone water.
- a pipe for vacuum-sucking the ozone water remaining inside the supply nozzle 40 may be installed on the side of the supply nozzle 40. By sucking the ozone water remaining in the supply nozzle 40, the supply time of the ozone water to the object W can be controlled more precisely.
- the cleaning apparatus of the present invention can be used for cleaning semiconductor substrates.
- the cleaning apparatus of the present invention can be applied to a single wafer cleaning apparatus that cleans semiconductor substrates one by one.
- the cleaning apparatus of the present invention can also be applied to a cleaning apparatus (dipping type cleaning apparatus) that immerses a plurality of semiconductor substrates in the cleaning tank 110 at a time.
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Abstract
Description
気体を液体に溶解させるための溶解タンクと、
前記溶解タンクに気体とともに液体を送り込むための移送ポンプと、
前記溶解タンク内に貯留されている液体を対象物に供給するための供給ノズルと、を備え、
前記移送ポンプが容積式ポンプであり、
前記溶解タンク、前記移送ポンプ、及び前記供給ノズルの液体と接触する部分がフッ素樹脂で形成されている、洗浄装置。
前記ダイヤフラムポンプのダイヤフラムがフッ素樹脂で形成されていることが好ましい。
前記噴射パイプの外周には、前記容積式ポンプによって送られる液体を前記溶解タンクの内壁に向けて噴射する噴射孔が設けられていることが好ましい。
前記2つの噴射孔は、前記噴射パイプの外周において互いに略90度離れた位置に設けられていることが好ましい。
前記液面計によって計測される液面の高さが一定となるように、前記気体放出バルブを制御する制御手段を備えることが好ましい。
図1は、第1の実施形態に係る洗浄装置のフロー図である。図2は、洗浄装置の平面図である。図3は、洗浄装置の正面図である。図4は、洗浄装置の側面図である。
図1~4に示すように、移送ポンプ30の吸引口は、配管14を介して純水タンク12に接続されている。移送ポンプ30は、純水タンク12に貯留されている純水を吸引して溶解タンク20に送り込むことができる。
図5に示すように、溶解タンク20の中心部には液面計23が設置されており、溶解タンク20の壁面に近い位置には噴射パイプ21が設置されている。断面略円形の噴射パイプ21の外周には、2つの噴射孔22a、22bが周方向に略90度離れた位置に設けられている。すなわち、噴射パイプ21の中心と、2つの噴射孔22a、22bとをそれぞれ結んで得られる中心角の大きさが、略90度となっている。例えば、2つの噴射孔22a、22bは、周方向に70度~110度、好ましくは80度~100度、より好ましくは85度~95度離れた位置に設けられている。2つの噴射孔22a、22bからは、水及びオゾンガスが略90度異なる方向に噴射される。水及びオゾンガスがこのように略90度異なる方向に噴射されることによって、溶解タンク20の内部には逆方向に回転する少なくとも2つの旋回流が生じる。これにより、水及びオゾンガスの接触及び攪拌が促進されるため、より多くのオゾンガスを水に溶解させることができる。なお、図5では、噴射パイプ21に2つの噴射孔22a、22bが設けられている例を示したが、噴射パイプ21に1つあるいは3つ以上の噴射孔が設けられてもよい。
気体放出バルブ24としては、例えば、ボール弁、玉形弁、ダイヤフラム弁等を用いることができるが、この中ではダイヤフラム弁を用いることが好ましい。また、気体放出バルブ24としては、配管部分がフッ素樹脂によって形成されたバルブを用いることが好ましい。
なお、気体放出バルブ24の制御方法の一例を示したが、他の方法によって気体放出バルブ24を制御してもよい。
図6に示すように、供給ノズル40は、一端が壁部42aによって閉じられるとともに他端が開口した円筒状の外側部材42、及び、一端が壁部44aによって閉じられるとともに他端が開口した円筒状の内側部材44を備えている。外側部材42の内径は、内側部材44の外径よりも大きい。内側部材44は、外側部材42の内部にその軸心が一致するように配置されている。
なお、3枚の多孔板50a~50cが配置されている例を示しているが、多孔板の数は3枚に限定されない。例えば、水質等に合わせて、多孔板の数を1~6枚の範囲で調整してもよい。多孔板の数を調整することにより、目的とする作業に適した気泡を発生させることができる。
スペーサ52a、52e、52fは、所定の厚み(例えば2.0mm)を有する円板である。
スペーサ52b、52c、52d、52gは、所定の厚み(例えば1.0mm)を有する円板である。
多孔板50a、50cは、複数の小孔(例えばφ1.0mm)が開けられた円板である。
多孔板50bは、複数の小孔(例えばφ0.5mm)が開けられた円板である。
スペーサは、多孔板と多孔板の間に設置するのが好ましい。多孔板と多孔板の間には、少なくとも0.5mmの空間を設けることが好ましい。多孔板と多孔板の間には、3mm~5mmの空間を設けることもできる。多孔板と多孔板の間に空間を設けることによって、気泡を効率よく発生させることができる。
溶解タンク20から配管25を介して送られてくる水は、コネクタ46の内部を通過した後、オリフィス48を通過する。このオリフィス48の上流と下流の圧力差によって、水中に溶解していたオゾンの一部が気泡となってバブルが発生する。
従来の半導体洗浄装置では、タンク、配管、バルブ、及びポンプ等の水と接触する部分に金属材料が用いられていた。このため、純水中に金属イオンが溶出する、あるいは、金属の腐食により発生した異物が洗浄水中に混入することがあった。
12 純水タンク
14,15,17,18,25 配管
20a 液面
20b 空間
20c 上底
20 溶解タンク
21 噴射パイプ
22a,22b 噴射孔
23 液面計
24 気体放出バルブ
26 返流配管
30 移送ポンプ
40、41 供給ノズル
60 制御手段
W 対象物
100 洗浄装置
102 循環タンク
104 返流配管
105 オゾン製造装置
106 純水供給配管
108 ヒータ
110 洗浄槽
Claims (11)
- 気体を液体に溶解させるための溶解タンクと、
前記溶解タンクに気体とともに液体を送り込むための移送ポンプと、
前記溶解タンク内に貯留されている液体を対象物に供給するための供給ノズルと、を備え、
前記移送ポンプが容積式ポンプであり、
前記溶解タンク、前記移送ポンプ、及び前記供給ノズルの液体と接触する部分がフッ素樹脂で形成されている、洗浄装置。 - 前記供給ノズルは、マイクロバブル発生ノズルである、請求項1記載の洗浄装置。
- 前記気体は、オゾンである、請求項1または請求項2記載の洗浄装置。
- 前記液体は、水である、請求項1から請求項3のうちいずれか1項に記載の洗浄装置。
- 前記移送ポンプは、ダイヤフラムポンプであり、
前記ダイヤフラムポンプのダイヤフラムがフッ素樹脂で形成されている、請求項1から請求項4のうちいずれか1項に記載の洗浄装置。 - 前記溶解タンクの内部には、噴射パイプが設置されており、
前記噴射パイプの外周には、前記容積式ポンプによって送られる液体を前記溶解タンクの内壁に向けて噴射する噴射孔が設けられている、請求項1から請求項5のうちいずれか1項に記載の洗浄装置。 - 前記噴射パイプの外周には、前記噴射孔が2つ設けられており、
前記2つの噴射孔は、前記噴射パイプの外周において互いに略90度離れた位置に設けられている、請求項6記載の洗浄装置。 - 前記溶解タンクの上部には、前記溶解タンクの内部に蓄積した気体を外部に放出するための気体放出バルブが設置されている、請求項1から請求項7のうちいずれか1項に記載の洗浄装置。
- 前記溶解タンク内に貯留されている液体の液面の高さを計測するための液面計を備え、
前記液面計によって計測される液面の高さが一定となるように、前記気体放出バルブを制御する制御手段を備える、請求項8記載の洗浄装置。 - 前記制御手段は、前記液面計によって計測される液面の高さが、前記溶解タンクの上底から1mm以上20mm以下となるように前記気体放出バルブを制御する、請求項9記載の洗浄装置。
- 前記対象物は、半導体ウェハ、液晶基板、または太陽電池基板である、請求項1から請求項10のうちいずれか1項に記載の洗浄装置。
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CN201580041138.9A CN106663622B (zh) | 2014-07-31 | 2015-07-29 | 清洗装置 |
JP2016538404A JP6534160B2 (ja) | 2014-07-31 | 2015-07-29 | 洗浄装置 |
US15/329,276 US10646836B2 (en) | 2014-07-31 | 2015-07-29 | Cleaning apparatus |
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JP2017148792A (ja) * | 2016-02-25 | 2017-08-31 | 株式会社デンソー | 液体噴射装置 |
WO2017179667A1 (ja) * | 2016-04-13 | 2017-10-19 | 株式会社オプトクリエーション | 洗浄装置 |
US20180169712A1 (en) * | 2016-12-20 | 2018-06-21 | SCREEN Holdings Co., Ltd. | Substrate treatment apparatus and substrate treatment method |
JP2018132293A (ja) * | 2017-02-15 | 2018-08-23 | 有限会社浦野技研 | スラリー氷の製造装置及び製造方法 |
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KR20170038010A (ko) | 2017-04-05 |
JPWO2016017700A1 (ja) | 2017-05-25 |
CN106663622B (zh) | 2020-01-07 |
US20180085720A1 (en) | 2018-03-29 |
KR102407018B1 (ko) | 2022-06-08 |
JP6534160B2 (ja) | 2019-06-26 |
US10646836B2 (en) | 2020-05-12 |
CN106663622A (zh) | 2017-05-10 |
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