WO2016011688A1 - 彩色显示器件结构 - Google Patents

彩色显示器件结构 Download PDF

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Publication number
WO2016011688A1
WO2016011688A1 PCT/CN2014/084451 CN2014084451W WO2016011688A1 WO 2016011688 A1 WO2016011688 A1 WO 2016011688A1 CN 2014084451 W CN2014084451 W CN 2014084451W WO 2016011688 A1 WO2016011688 A1 WO 2016011688A1
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Prior art keywords
blue
light
green
emitting layer
zinc
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PCT/CN2014/084451
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English (en)
French (fr)
Inventor
刘亚伟
王宜凡
罗长诚
Original Assignee
深圳市华星光电技术有限公司
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Priority to US14/384,672 priority Critical patent/US9276046B2/en
Publication of WO2016011688A1 publication Critical patent/WO2016011688A1/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/38Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/12OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/842Containers
    • H10K50/8426Peripheral sealing arrangements, e.g. adhesives, sealants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/121Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/351Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/871Self-supporting sealing arrangements
    • H10K59/8722Peripheral sealing arrangements, e.g. adhesives, sealants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/331Nanoparticles used in non-emissive layers, e.g. in packaging layer

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a color display device structure and a method of fabricating the same. Background technique
  • OLED Organic Light Emitting Diode
  • LCD liquid crystal display
  • the other is white light + RGB filter (Color Filter, CF) technology, represented by LG.
  • RGB filter Color Filter, CF
  • LG white light + RGB filter
  • the filter absorbs most of the light energy, only about 30% of the light energy is transmitted, so a high-performance white light material is required, otherwise the display device is inefficient, and is generally used for a small molecule OLED display. .
  • the third type is a blue OLED, which passes through the green and red color conversion method (CCM), and emits red, green and blue primary colors through blue light to excite red and green light materials to realize color display. Since the same production technique as the color filter can be used, the pixel density is improved as compared with the RGB colorization, and a higher yield can be achieved.
  • CCM green and red color conversion method
  • NCs Semiconductor nanocrystals
  • QDs quantum dots
  • Quantum Dots Light Emitting Diode has important commercial application value and has attracted strong research interest in the last decade.
  • QD-LEDs have many advantages over OLEDs: (1) Quantum dots emit light with a linewidth between 20-30 nm, relative to organic light emission >50 nm, full width at half maximum (Full Width at Half) Maximum, FWHM) To be narrow, this plays a key role in the color purity of the real picture. (2) Inorganic materials exhibit better thermal stability relative to organic materials. When the device is exposed to high brightness or high current density, Joule heat is the main cause of device degradation. Due to the excellent thermal stability, devices based on inorganic materials will exhibit a long service life.
  • the color of the OLED display will change with time due to the different life span of the red, green and blue primary color organic materials.
  • the luminescence of the three primary colors can be achieved due to the quantum confinement effect.
  • the same material can exhibit a similar degraded lifetime.
  • QD-LED can realize the emission of infrared light, and the wavelength of the organic material is generally less than 1 micron.
  • the External Quantum Efficiency (EQE) may reach 100%.
  • QD-LEDs can be divided into organic-inorganic hybrid devices and all-inorganic devices.
  • the former can achieve high brightness and can be flexibly fabricated, and the latter has advantages in device stability.
  • the object of the present invention is to provide a color display device structure, which improves the structure of the white light + RGB filter, and the color display device structure has a simple manufacturing process, high color purity, good light efficiency, high stability, and super Good performance such as thin.
  • the present invention first provides a color display device comprising: a substrate, an anode formed on the substrate, a thin film transistor array formed on the anode, and a hole injection layer formed on the thin film transistor array, formed in the space a hole transport layer on the hole injection layer, a light emitting layer formed on the hole transport layer, an electron transport layer formed on the light emitting layer, and formed on the electron transport layer a cathode, a cover plate disposed above the cathode and bonding to the substrate, a color conversion layer formed on the inner side of the cover plate, and a sealant frame for encapsulating the substrate and the cover plate, wherein: the light-emitting layer is blue a green light common light emitting layer; the color conversion layer includes a blue filter unit, a green filter unit, and a red color conversion unit; the blue and green light emitted by the blue and green light common light layer is filtered by blue The unit is filtered to become blue light, and the blue and green light emitted
  • the color conversion layer further includes a white conversion unit, and the white conversion unit includes a red conversion portion and a blank light transmission portion, and the blue and green light emitted by the blue and green common light-emitting layer is converted into red light by the red conversion portion.
  • the blue and green light emitted by the blue and green common light emitting layer is still blue and green through the blank light transmitting portion, and the red light and blue and green light are combined into white light.
  • the material of the blue and green light-emitting layer is an organic light-emitting material, and the blue and green light-emitting layer is formed by vacuum thermal evaporation or solution film formation.
  • the organic luminescent material adopts a manner in which an organic host material is doped with an organic blue guest material and an organic green light guest material, and the organic host material is 4,4',4"-tris(carbazol-9-yl)triphenylamine. Or 2, 4, 6, -tris(9H-carbazol-9-yl)-1,3,5-triazine, the organic blue guest material is 9,10-bis(2-naphthyl)anthracene, The organic green light guest material is tris(2-phenylpyridine) ruthenium.
  • the material of the blue and green common light-emitting layer comprises a blue quantum dot and a green light quantum dot, and the blue and green common light-emitting layer is formed by solution film formation.
  • the blue light quantum dots are quantum dots, such as zinc cadmium, cadmium selenide/zinc-zinc, or nano-silicon nitride, and the green light quantum dots are quantum dots cadmium selenide/zinc-zinc or zinc-selenide-doped copper. ion.
  • the material of the blue and green light-emitting layer further comprises an organic host material, which is 4,4',4"-tris(carbazol-9-yl)triphenylamine, or 2, 4, 6, - Tris(9H-carbazol-9-yl)-1,3,5-triazine, the organic host material is mixed with blue light quantum dots, green light quantum dot particles and a solvent, coated and volatilized to remove the solvent to form the blue , green light common light layer.
  • an organic host material which is 4,4',4"-tris(carbazol-9-yl)triphenylamine, or 2, 4, 6, - Tris(9H-carbazol-9-yl)-1,3,5-triazine
  • the material of the color conversion layer is an organic fluorescent material.
  • the material of the color conversion layer is a quantum dot
  • the material of the blue filter unit is quantum dot leaching zinc cadmium, cadmium selenide/zinc leaching, or nano silicon nitride
  • the material of the green filter unit The quantum dot is cadmium selenide/zinc-zinc or zinc selenide-doped copper ions
  • the material of the red conversion unit is quantum dot cadmium/lead cadmium/zinc-zinc.
  • the surface of the blue filter unit, the green filter unit and the red conversion unit has a surface coating agent, which is stearic acid, tri-zinc-phosphine oxide, or polymethyl methacrylate;
  • the quantum dots are mixed with a surface coating agent and a solvent, coated and evaporated to remove the solvent to obtain the blue filter unit, the green filter unit, and the red conversion unit.
  • Advantageous Effects of the Invention realizes color display by reducing the blue and green common light emitting layer and the color conversion layer including the blue filter unit, the green filter unit and the red conversion unit.
  • the thickness of the light emitting layer and the entire color display device; and the materials of the blue, green light common light emitting layer and the color conversion layer can be set as organic materials, or can be set as quantum dots, so that the color display device has high color purity and good light efficiency. Good performance such as high stability; At the same time, since the blue and green light common light-emitting layer does not need to use a fine mask, the ratio of the two light-emitting materials is relatively easy, so that the color display device structure is simple in fabrication process and low in cost. . DRAWINGS
  • FIG. 1 is a schematic structural view of a first embodiment of a color display device structure according to the present invention.
  • FIG. 2 is a schematic diagram of a driving circuit of one pixel in FIG. 1;
  • FIG. 3 is a schematic diagram of a pixel arrangement of a first embodiment of a color display device according to the present invention
  • FIG. 4 is a schematic diagram of another pixel arrangement of a first embodiment of a color display device according to the present invention
  • FIG. 6 is a schematic diagram of a driving circuit of one pixel in FIG. 5;
  • FIG. 7 is a schematic diagram of a pixel arrangement of a second embodiment of a color display device according to the present invention.
  • FIG. 8 is another schematic diagram of a pixel arrangement of a second embodiment of the color display device structure of the present invention.
  • FIG. 1 is a schematic structural view of a first embodiment of a color display device structure according to the present invention.
  • the color display device structure includes a substrate 1, an anode formed on the substrate 1, an Thin Film Transistor (TFT) 23 formed on the anode 21, and a hole injection formed on the thin film transistor array 23.
  • a hole transport layer (HTL) 25 formed on the hole injection layer 24, and a light-emitting layer (Emitter) 26 formed on the hole transport layer 25 are formed on An electron transport layer (ETL) 27 on the light-emitting layer 26, a cathode 28 formed on the electron transport layer 27, a cap plate 3 disposed above the cathode 28 and attached to the substrate 1, and a cap formed on the cover
  • the luminescent layer 26 is a blue, green, common luminescent layer 26.
  • the color conversion layer 4 includes an interval
  • the blue filter unit 41, the green filter unit 43, and the red conversion unit 45 are provided.
  • the blue and green light emitted by the blue and green common light-emitting layer 26 is filtered by the blue filter unit 41 to become blue light, and the blue and green light emitted by the blue and green common light-emitting layer 26 is filtered by the green filter unit 43.
  • the green light is emitted, and the blue and green light emitted from the blue and green common light-emitting layer 26 is converted into red light by the red converting unit 45, thereby realizing color display and reducing the thickness of the light-emitting layer and the entire color display device.
  • the blue and green light common light-emitting layer 26 are not red, green and blue light-emitting structures, but are similar to the full-surface light-emitting layer of the white light OLED, the blue and green light common light-emitting layer 26 is not required to be used for fabrication.
  • the fine mask, and the ratio of the blue and green luminescent materials are easier to match than the red, green and blue luminescent materials, so that the color display device structure is simple in fabrication process and low in cost.
  • the substrate 1 and the cover plate 3 may be a glass plate or a flexible material, at least one of which needs to transmit light.
  • the substrate 1 and the cover plate 3 are both glass plates.
  • the sealant frame 6 prevents the ingress of moisture and oxygen from the outside and protects the internal components.
  • the material of the hole injection layer 24 is polyethylene dioxythiophene (PEDOT), the material of the hole transport layer 25 is polytriphenylamine (poly-TPD), and the material of the electron transport layer 27 is octahydroxyl. Quinoline aluminum (Alq 3 ).
  • the material of the blue and green common light-emitting layer 26 may be an organic light-emitting material, and blue quantum dots and green light quantum dots may also be used.
  • the blue and green light common light-emitting layer 26 is an organic light-emitting material
  • the blue and green light common light-emitting layer 26 is formed by vacuum thermal evaporation or solution film formation.
  • the organic luminescent material adopts a manner in which an organic host material is doped with an organic blue guest material and an organic green light guest material.
  • the organic host material is 4,4',4"-tris(carbazol-9-yl)triphenylamine (T:
  • the organic blue guest material is 9,10-bis(2-naphthyl:) anthracene (ADN), and the molecular formula is:
  • the organic green light guest material is tris(2-phenylpyridinium) ruthenium (Ir (ppy) 3 ), and its molecular formula
  • the color display device has high color purity, good light efficiency and high stability.
  • the blue and green common light-emitting layer 26 is formed by solution film formation.
  • the blue light quantum dots are quantum dots, zinc cadmium (ZnCdS), cadmium selenide/zinc (CdSe/ZnS), or nano silicon nitride (SiN 4 ).
  • the green light quantum dots are quantum dots cadmium selenide/zinc thinning or zinc selenide doped copper ions (ZnSe: Cu 2+ ).
  • the material of the blue and green light common light-emitting layer 26 may adopt the above-mentioned pure blue light quantum dot and green light quantum dot layer, or the organic host material may be doped with blue quantum dots and green light quantum dots.
  • the organic host material is 4,4',4"-tris(carbazol-9-yl)triphenylamine, or 2,4,6-tris(9H-carbazol-9-yl)-1,3, 5-triazine.
  • the organic host material is mixed with blue light quantum dots, green light quantum dot particles and a solvent, and is coated and volatilized to remove the solvent to form the blue and green light common light emitting layer (26).
  • the material of the color conversion layer 4 may be an organic fluorescent material, particularly a color filter material used in current LCD processes.
  • the material of the color conversion layer 4 can also be a quantum dot, so that the color display device has high color purity, good light efficiency and high stability.
  • the material of the blue filter unit 41 is quantum dot leaching zinc cadmium, cadmium selenide/zinc leaching, or nano silicon nitride
  • the material of the green filter unit 43 is quantum dot cadmium selenide. / thinning zinc, or zinc selenide doped copper ions
  • the material of the red conversion unit 45 is quantum dot cadmium selenide / cadmium thinning / zinc thinning (CdSe / CdS / ZnS).
  • the quantum dots are nanoparticles, zero-dimensional materials, large surface activity, prone to agglomeration, oxidation and quenching of fluorescence, the blue filter unit 41, the green filter unit 43 and the red conversion
  • the surface of unit 45 also has a surface coating to prevent agglomeration and oxidation.
  • the surface coating agent is stearic acid, tri-zinc-phosphine oxide, or polymethyl methacrylate (PMMA).
  • PMMA polymethyl methacrylate
  • the blue filter unit 41, the green filter unit 43 and the red conversion unit 45 correspond to a pixel, and the pixel includes a red sub-pixel 85 and a green sub-pixel 83.
  • the red conversion unit 45 corresponds to the red sub-pixel 85 in the pixel
  • the green filter unit 43 corresponds to the green sub-pixel 83 in the pixel
  • the blue sub-pixel 81 in the corresponding pixel of the blue filter unit 41.
  • the red sub-pixel 85, the green sub-pixel 83, and the blue sub-pixel 81 respectively correspond to one TFT, so as to control whether the blue and green light-emitting layer 26 regions corresponding to each sub-pixel respectively emit light.
  • the TTF control corresponds to the blue and green light-emitting layer 26 regions of the blue sub-pixel 81
  • the blue and green light emitted from the blue and green light-emitting layer 26 regions are filtered by the blue filter unit 41 to become blue light
  • the TTF control is corresponding
  • the blue and green light-emitting layer 26 regions of the green sub-pixel 83 emit light
  • the blue and green light emitted from the blue and green light-emitting layer 26 regions are filtered by the green filter unit 43 to become green light
  • the TTF control corresponds to the red sub-pixel 85
  • the blue and green light-emitting layer 26 regions emit light
  • the blue and green light emitted from the blue and green light-emitting layer 26 regions are converted into red light by the red converting unit 45, thereby realizing the display of the three primary colors of red, green, and blue, and Superimposes various colors to achieve color display.
  • FIG. 3 a pixel arrangement of a first embodiment of a color display device structure of the present invention is shown.
  • the pixels are arranged in the same manner in each of the adjacent upper and lower rows, and the red sub-pixel 85, the green sub-pixel 83, and the blue sub-pixel 81 are sequentially spaced from left to right in the horizontal direction.
  • FIG. 4 is a schematic diagram of another pixel arrangement of the first embodiment of the color display device structure of the present invention.
  • the arrangement of pixels in each of the adjacent upper and lower rows is different, wherein the upward pixel arrangement manner is that the red sub-pixel 85, the green sub-pixel 83, and the blue sub-pixel 81 are sequentially spaced from left to right in the horizontal direction.
  • the downward pixel arrangement is such that the blue sub-pixel 81, the red sub-pixel 85, and the green sub-pixel 83 are sequentially spaced from left to right in the horizontal direction. Therefore, the technical effect of the present invention can be applied to a color display device of a different pixel arrangement regardless of the arrangement of the sub-pixels of the pixel.
  • FIG. 5 is a structural diagram of a second embodiment of a color display device structure according to the present invention.
  • the color conversion layer 4' includes a white color conversion unit 41, a green filter unit 43 and a red color conversion unit 45, and a white conversion unit 47.
  • the white conversion unit 47 includes a red conversion portion 471 and a blank light transmitting portion 473.
  • the blue and green light emitted by the blue and green common light-emitting layer 26 is converted into red light by the red conversion portion 471, and the blue and green light emitted by the blue and green common light-emitting layer 26 passes through the blank light-transmitting portion 473. It is blue and green, and the red light is combined with blue and green light to synthesize white light.
  • the white conversion unit 47 can also be set to blue CF+green light. In a manner in which the CF+red CCM is mixed, the blue and green light emitted by the blue and green common light-emitting layer 26 is converted into white light by the white conversion unit 47.
  • the blue filter unit 41 , the green filter unit 43 , the red conversion unit 45 and the white conversion unit 47 correspond to one pixel, and the pixel includes a red sub-pixel 85 , The green sub-pixel 83, the blue sub-pixel 81, and the white sub-pixel 87.
  • the red conversion unit 45 corresponds to the red sub-pixel 85 in the pixel
  • the green filter unit 43 corresponds to the green sub-pixel 83 in the pixel and the blue sub-pixel 81 in the corresponding pixel of the blue filter unit 41.
  • the white conversion unit 47 corresponds to the white sub-pixel 87 in the pixel.
  • the red sub-pixel 85, the green sub-pixel 83, the blue sub-pixel 81 and the white sub-pixel 87 respectively correspond to one TFT, so as to control whether the blue and green light-emitting layer 26 regions corresponding to each sub-pixel respectively emit light.
  • the pixel arrangement manner of the second embodiment may be the same for each adjacent upper and lower rows, and the red sub-pixel 85 , the green sub-pixel 83 , the blue sub-pixel 81 and the white are arranged in the same manner.
  • the sub-pixels 87 are sequentially spaced from left to right in the horizontal direction.
  • the red sub-pixel 85, the green sub-pixel 83, the blue sub-pixel 81, and the white sub-pixel 87 are sequentially spaced apart in the clockwise direction.
  • the color display device structure of the present invention realizes color display by providing a blue and green common light emitting layer and a color conversion layer including a blue filter unit, a green filter unit and a red conversion unit, thereby reducing color display.
  • the thickness of the light emitting layer and the entire color display device; and the materials of the blue, green light common light emitting layer and the color conversion layer may be set as an organic material, or may be set as a quantum dot, so that the color display device has high color purity and good light effect.
  • the blue and green light common light-emitting layer does not need to use a fine mask, the ratio of the two light-emitting materials is relatively easy, so that the color display device structure is simple in manufacturing process and low in cost.

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Abstract

一种彩色显示器件结构,包括:基板(1)、阳极(21)、薄膜晶体管阵列(23)、空穴注入层(24)、空穴传输层(25)、发光层(26),电子传输层(27)、阴极(28),盖板(3)、形成于盖板(3)内侧的色彩转换层(4)、及密封胶框(6);发光层(26)为蓝、绿光共同发光层(26);色彩转换层(4)包括间隔设置的蓝色滤光单元(41)、绿色滤光单元(43)与红色转换单元(45);所述蓝、绿光共同发光层(26)发出的蓝、绿光经过蓝色滤光单元(41)过滤成为蓝光,经过绿色滤光单元(43)过滤成为绿光,经过红色转换单元(45)转换成为红光,从而实现彩色显示,其制作工艺简单,具有色纯度高、光效好、稳定性高、超薄等良好性能。

Description

彩色显示器件结构
技术领域
本发明涉及显示技术领域, 尤其涉及一种彩色显示器件结构及其制作 方法。 背景技术
有机发光二极管显示器 (Organic Light Emitting Diode, OLED) 是一种 极具发展前景的平板显示技术, 它不仅具有十分优异的显示性能, 还具有 自发光、 结构简单、 超轻薄、 响应速度快、 宽视角、 低功耗及可实现柔性 显示等特性, 被誉为 "梦幻显示器", 再加上其生产设备投资远小于液晶显 示器 (Liquid Crystal Display, LCD) , 得到了各大显示器厂家的青睞, 已成 为显示技术领域中第三代显示器件的主力军。
目前, 实现 OLED 的彩色化有几种技术路线: 一种是红绿蓝 (Red、 Green, Blue, RGB) 三基色发光, 以三星公司为代表。 该技术只适用于容 易升华的有机小分子材料, 其优点是工艺简单成熟, 搡作简便. 但由于在 制备高分辨率显示屏时需要高精度掩膜及精确的对位, 导致产能较低、 成 本较高, 而且由于三基色的寿命、 激发率以及衰减度相差较大, 造成了彩 色显示器件的偏色。
另一种是白光 +RGB滤光片 (Color Filter, CF) 技术, 以 LG公司为代 表。 由于可利用 LCD成熟的 CF技术, 不需要掩膜对位, 极大地简化了蒸 镀过程, 因而能降低生产成本, 可用于制备大尺寸高分辨率 OLED。 但是, 由于滤光片吸收了大部分的光能, 只有约 30%的光能透过, 所以需要高性 能的白光材料, 否则显示器件的效率较低, 一般也是用于小分子的 OLED 显示屏。
第三种是由蓝光 OLED , 经过绿光与红光色彩转换方法 (Color conversion method, CCM), 通过蓝光激发红绿光材料使其发光而得到红绿 蓝三基色, 实现彩色显示。 由于可以使用与彩色滤光片相同的生产技术, 因此与 RGB彩色化相比,即提高了像素点密度, 又可以实现较高的良品率。 此技术由出光兴产与富士电机开发。 但蓝光材料是制约这种技术的瓶颈, 现阶段一般只能用于制备小分子 OLED。
半导体纳米晶 (semiconductor nanocrystals, NCs), 是指尺寸为 1-100 nm的半导体纳米晶粒。 由于半导体纳米晶的尺寸小于其体材料的激子波尔 半径, 表现出强的量子限域效应, 准连续的能带演变为类似于分子的分立 能级结构,呈现出新的材料性^, 因此也称为量子点(quantum dots, QDs)。
由于外部能量的激发 (光致发光, 电致发光, 阴极射线发光等), 电子 从基态跃迁到激发态。 处于激发态的电子和空穴可能会形成激子。 电子与 空穴发生复合, 最终弛豫到基态。 多余的能量通过复合和弛豫过程释放, 可能辐射复合发出光子。
量子点发光二极管显示器件 (Quantum Dots Light Emitting Diode, QD-LED)具有重要的商业应用价值,在最近十年引起人们强烈的研究兴趣。 事实上, QD-LEDs 相对于 OLED很多的优势: (1 )、 量子点发光的线宽在 20-30 nm 之间,相对于有机发光>50 nm的发光,半峰全宽(Full Width at Half Maximum, FWHM) 要窄, 这对于现实画面的色纯度起关键的作用。 (2)、 无机材料相对于有机材料表现出更好的热稳定性。 当器件处于高亮度或高 电流密度下, 焦耳热是使器件退化的主要原因。 由于优异的热稳定性, 基 于无机材料的器件将表现出长的使用寿命。 (3)、 由于红绿蓝三基色有机材 料的寿命不同, OLED 显示器的颜色将随时间变化。 然而, 用同一种材料 合成不同尺寸的量子点, 由于量子限域效应, 可以实现三基色的发光。 同 一种材料可以表现出相似的退化寿命。 (4)、 QD-LED可以实现红外光的发 射, 而有机材料的发光波长一般小于 1 微米。 (5)、 对于量子点没有自旋 统计的限制, 其外量子效率 (External Quantum Efficiency, EQE) 有可能达 到 100%。
QD-LED可以分为有机-无机杂化器件与全无机器件, 前者可以达到高 的亮度、 可以柔性制作, 后者在器件的稳定性方面具有优势。 但现阶段有 关 QD-LED的报道相对较少。
因此, 有必要研发一种新的制作工艺较简单、 色纯度高、 光效好、 稳 定性高、 厚度薄的彩色显示器件结构。 发明内容
本发明的目的在于提供一种彩色显示器件结构,其对白光 +RGB滤光片 结构进行改进, 且该彩色显示器件结构的制作工艺简单, 具有色纯度高、 光效好、 稳定性高、 超薄等良好性能。
为实现上述目的, 本发明首先提供一种彩色显示器件, 包括: 基板、 形成于基板上的阳极、 形成于阳极上的薄膜晶体管阵列、 形成于薄膜晶体 管阵列上的空穴注入层、 形成于空穴注入层上的空穴传输层、 形成于空穴 传输层上的发光层、 形成于发光层上的电子传输层、 形成于电子传输层上 的阴极, 设于阴极上方并与基板贴合的盖板、 形成于盖板内侧的色彩转换 层、 及用于封装基板与盖板的密封胶框, 其特征在于: 所述发光层为蓝、 绿光共同发光层; 所述色彩转换层包括间隔设置的蓝色滤光单元、 绿色滤 光单元与红色转换单元; 所述蓝、 绿光共同发光层发出的蓝、 绿光经过蓝 色滤光单元过滤成为蓝光, 所述蓝、 绿光共同发光层发出的蓝、 绿光经过 绿色滤光单元过滤成为绿光, 所述蓝、 绿光共同发光层发出的蓝、 绿光经 过红色转换单元转换成为红光, 从而实现彩色显示。
所述色彩转换层还包括一白色转换单元, 所述白色转换单元包括红色 转换部分与空白透光部分, 所述蓝、 绿光共同发光层发出的蓝、 绿光经过 红色转换部分转换成为红光, 所述蓝、 绿光共同发光层发出的蓝、 绿光透 过空白透光部分仍为蓝、 绿光, 所述红光与蓝、 绿光合成白光。
所述蓝、 绿光共同发光层的材料为有机发光材料, 所述蓝、 绿光共同 发光层通过真空热蒸镀或溶液成膜的方式形成。
所述有机发光材料采取有机主体材料摻杂有机蓝光客体材料、 与有机 绿光客体材料的方式, 所述有机主体材料为 4,4',4"-三 (咔唑 -9-基)三苯胺、 或 2, 4, 6, -三(9H-咔唑 -9-基) -1,3,5-三嗪,所述有机蓝光客体材料为 9,10- 二 (2-萘基)蒽, 所述有机绿光客体材料为三 (2-苯基吡啶)合铱。
所述蓝、 绿光共同发光层的材料包括蓝光量子点与绿光量子点, 所述 蓝、 绿光共同发光层采用溶液成膜的方式形成。
所述蓝光量子点为量子点疏化锌鎘、 硒化鎘 /疏化锌、 或纳米氮化硅, 所述绿光量子点为量子点硒化鎘 /疏化锌、 或硒化锌摻杂铜离子。
所述蓝、 绿光共同发光层的材料还包括有机主体材料, 该有机主体材 料为 4,4',4"-三 (咔唑 -9-基)三苯胺、 或 2, 4, 6, -三 (9H-咔唑 -9-基) -1,3,5- 三嗪, 所述有机主体材料与蓝光量子点、 绿光量子点颗粒及溶剂混合, 涂 覆并挥发去除溶剂后形成所述蓝、 绿光共同发光层。
所述色彩转换层的材料为有机荧光材料。
所述色彩转换层的材料为量子点, 所述蓝色滤光单元的材料为量子点 疏化锌鎘、 硒化鎘 /疏化锌、 或纳米氮化硅, 所述绿色滤光单元的材料为量 子点硒化鎘 /疏化锌、 或硒化锌摻杂铜离子, 所述红色转换单元的材料为量 子点 化鎘 /疏化鎘 /疏化锌。
所述蓝色滤光单元、 绿色滤光单元与红色转换单元的表面具有表面包 覆剂, 所述表面包覆剂为硬脂酸、 氧化三锌基膦、 或聚甲基丙烯酸甲酯; 将所述量子点与表面包覆剂及溶剂混合, 涂覆并挥发去除溶剂后得到所述 蓝色滤光单元、 绿色滤光单元、 与红色转换单元。 本发明的有益效果: 本发明的彩色显示器件结构, 通过设置蓝、 绿光 共同发光层及包括蓝色滤光单元、 绿色滤光单元与红色转换单元的色彩转 换层, 实现彩色显示, 减小了发光层与整个彩色显示器件的厚度; 且蓝、 绿光共同发光层及色彩转换层的材料可设置为有机材料, 也可设置为量子 点, 使得彩色显示器件具有色纯度高、 光效好、 稳定性高等良好性能; 同 时, 由于蓝、 绿光共同发光层制作时不需要使用精细掩膜, 两种发光材料 的配比相对容易, 使得该彩色显示器件结构的制作工艺简单, 成本较低。 附图说明
下面结合附图, 通过对本发明的具体实施方式详细描述, 将使本发明 的技术方案及其它有益效果显而易见。
附图中,
图 1为本发明彩色显示器件结构第一实施例的结构示意图;
图 2为图 1 中一个像素的驱动电路示意图;
图 3为本发明彩色显示器件结构第一实施例的一种像素排布示意图; 图 4为本发明彩色显示器件结构第一实施例的另一种像素排布示意图; 图 5为本发明彩色显示器件结构第二实施例的结构示意图;
图 6为图 5中一个像素的驱动电路示意图;
图 7为本发明彩色显示器件结构第二实施例的一种像素排布示意图; 图 8为本发明彩色显示器件结构第二实施例的另一种像素排布示意图。 具体实施方式
为更进一步阐述本发明所采取的技术手段极其效果, 以下结合本发明 的优选实施例极其附图进行详细描述。
请参阅图 1, 为本发明一种彩色显示器件结构第一实施例的结构示意 图。 该彩色显示器件结构包括基板 1、 形成于基板 1上的阳极(Anode) 21、 形成于阳极 21上的薄膜晶体管阵列 ( Thin Film Transistor, TFT) 23、 形成 于薄膜晶体管阵列 23上的空穴注入层 (Hole Injection Layer, HIL) 24、 形 成于空穴注入层 24上的空穴传输层 (Hole Transport Layer, HTL) 25、 形 成于空穴传输层 25上的发光层 (Emitter) 26、 形成于发光层 26上的电子 传输层 (Electron Transport Layer, ETL) 27、 形成于电子传输层 27上的阴 极 (Cathode) 28, 设于阴极 28上方并与基板 1贴合的盖板 3、 形成于盖板 3内侧的色彩转换层 4、 及用于封装基板 1与盖板 3的密封胶框 6。
所述发光层 26为蓝、 绿光共同发光层 26。 所述色彩转换层 4包括间隔 设置的蓝色滤光单元 41、 绿色滤光单元 43与红色转换单元 45。 所述蓝、 绿光共同发光层 26发出的蓝、 绿光经过蓝色滤光单元 41过滤成为蓝光, 所述蓝、 绿光共同发光层 26发出的蓝、 绿光经过绿色滤光单元 43过滤成 为绿光, 所述蓝、 绿光共同发光层 26发出的蓝、 绿光经过红色转换单元 45 转换成为红光, 从而实现彩色显示, 并减小了发光层与整个彩色显示器件 的厚度。
由于所述发光层蓝、 绿光共同发光层 26不是红绿蓝三基色发光结构, 而是类似于白光 OLED的整面发光层, 所以所述蓝、 绿光共同发光层 26制 作时不需要使用精细掩膜, 且蓝、 绿两种发光材料的配比比红、 绿、 蓝三 种发光材料的配比容易, 使得该彩色显示器件结构的制作工艺简单, 成本 较低。
具体的, 所述基板 1 与盖板 3可以是玻璃板, 也可以是柔性材料, 其 中至少一个要透光, 优选的, 所述基板 1 与盖板 3均为玻璃板。 所述密封 胶框 6能够防止外界的水汽、 氧气进入, 保护内部元件。
所述空穴注入层 24的材料为聚乙撑二氧噻吩 (PEDOT) , 所述空穴传 输层 25的材料为聚三苯胺 (poly-TPD), 所述电子传输层 27的材料为八羟 基喹啉铝 (Alq3)。
所述蓝、 绿光共同发光层 26的材料可为有机发光材料, 也可采用蓝光 量子点与绿光量子点。
进一步的, 当所述蓝、 绿光共同发光层 26的材料为有机发光材料时, 所述蓝、 绿光共同发光层 26通过真空热蒸镀或溶液成膜的方式形成。
所述有机发光材料采取有机主体材料摻杂有机蓝光客体材料、 与有机 绿光客体材料的方式。 所述有机主体材料为 4,4',4"-三(咔唑 -9-基)三苯胺 (T :
9H-咔唑 -9-基) -1,3,5-三嗪 (TRZ), 其分子式为:
Figure imgf000007_0001
所述有机蓝光客体材料为 9,10-二 (2-萘基:)蒽 (ADN), 其分子式为:
Figure imgf000008_0001
所述有机绿光客体材料为三 (2-苯基比啶)合铱 (Ir (ppy) 3), 其分子式
Figure imgf000008_0002
当所述蓝、绿光共同发光层 26的材料采用蓝光量子点与绿光量子点时, 彩色显示器件的色纯度高、 光效好、 稳定性高。 所述蓝、 绿光共同发光层 26采用溶液成膜的方式形成。
具体的, 所述蓝光量子点为量子点疏化锌鎘 (ZnCdS)、 硒化鎘 /疏化锌 (CdSe/ZnS) , 或纳米氮化硅 (SiN4)。 所述绿光量子点为量子点硒化鎘 /疏 化锌、 或硒化锌摻杂铜离子 (ZnSe: Cu2+)。
所述蓝、 绿光共同发光层 26的材料可以采用上述纯蓝光量子点与绿光 量子点层, 也可采用有机主体材料摻杂蓝光量子点与绿光量子点的方式。 所述有机主体材料为 4,4',4"-三 (咔唑 -9-基)三苯胺、 或 2, 4, 6, -三 (9H- 咔唑 -9-基) -1,3,5-三嗪。所述有机主体材料与蓝光量子点、 绿光量子点颗粒 及溶剂混合, 涂覆并挥发去除溶剂后形成所述蓝、 绿光共同发光层 (26)。
所述色彩转换层 4的材料可为有机荧光材料, 特别是目前 LCD制程中 使用的彩色滤光片材料。
所述色彩转换层 4 的材料也可为量子点, 使得彩色显示器件的色纯度 高、 光效好、 稳定性高。 进一步的, 所述蓝色滤光单元 41的材料为量子点 疏化锌鎘、 硒化鎘 /疏化锌、 或纳米氮化硅, 所述绿色滤光单元 43的材料为 量子点硒化鎘 /疏化锌、或硒化锌摻杂铜离子, 所述红色转换单元 45的材料 为量子点硒化鎘 /疏化鎘 /疏化锌 (CdSe/CdS/ZnS)。
值得一提的是, 由于量子点是纳米颗粒, 零維材料, 表面活性大, 容 易发生团聚, 导致氧化并使荧光淬灭, 所述蓝色滤光单元 41、 绿色滤光单 元 43与红色转换单元 45的表面还具有表面包覆剂, 以防止团聚与氧化。 所述表面包覆剂为硬脂酸、氧化三锌基膦、或聚甲基丙烯酸甲酯(PMMA)。 将所述量子点与表面包覆剂及溶剂混合, 涂覆并挥发去除溶剂后得到所述 蓝色滤光单元 41、 绿色滤光单元 43、 与红色转换单元 45。
请参阅图 2, 在该第一实施例中, 所述蓝色滤光单元 41、 绿色滤光单 元 43与红色转换单元 45对应一像素, 所述像素包括红色子像素 85、 绿色 子像素 83、 与蓝色子像素 81。 所述红色转换单元 45对应像素中的红色子 像素 85, 所述绿色滤光单元 43对应像素中的绿色子像素 83、 所述蓝色滤 光单元 41 对应像素中的蓝色子像素 81。 所述红色子像素 85、 绿色子像素 83、与蓝色子像素 81分别对应一个 TFT, 以控制每个子像素分别对应的蓝、 绿发光层 26区域是否发光。 当 TTF控制对应于蓝色子像素 81的蓝、 绿发 光层 26 区域发光时, 该蓝、 绿发光层 26 区域发出的蓝、 绿光经过蓝色滤 光单元 41过滤成为蓝光; 当 TTF控制对应于绿色子像素 83的蓝、 绿发光 层 26 区域发光时, 该蓝、 绿发光层 26 区域发出的蓝、 绿光经过绿色滤光 单元 43过滤成为绿光; 当 TTF控制对应于红色子像素 85的蓝、 绿发光层 26区域发光时, 该蓝、 绿发光层 26区域发出的蓝、 绿光经过红色转换单元 45转换成为红光, 从而实现了红、 绿、 蓝三基色的显示, 并能叠加出各种 色彩, 实现彩色显示。
请参阅图 3,为本发明彩色显示器件结构第一实施例的一种像素排布示 意图。 每相邻上下两行的像素排布方式完全相同, 所述红色子像素 85、 绿 色子像素 83、 与蓝色子像素 81沿水平方向从左至右依次间隔设置。
请参阅图 4,为本发明彩色显示器件结构第一实施例的另一种像素排布 示意图。 每相邻上下两行的像素排布方式不同, 其中上行的像素排布方式 为所述红色子像素 85、 绿色子像素 83、 与蓝色子像素 81 沿水平方向从左 至右依次间隔设置, 而下行的像素排布方式为所述蓝色子像素 81、 红色子 像素 85、 与绿色子像素 83沿水平方向从左至右依次间隔设置。 由此说明, 本发明的技术效果与像素的各子像素的排布方式无关, 可应用于不同像素 排布方式的彩色显示器件。
请参阅图 5, 为本发明彩色显示器件结构第二实施例的结构示意图。该 第二实施例与上述第一实施例的区别在于, 所述色彩转换层 4'除包括蓝色 滤光单元 41、 绿色滤光单元 43与红色转换单元 45外, 还包括一白色转换 单元 47。所述白色转换单元 47包括红色转换部分 471与空白透光部分 473。 所述蓝、 绿光共同发光层 26发出的蓝、 绿光经过红色转换部分 471转换成 为红光,所述蓝、绿光共同发光层 26发出的蓝、绿光透过空白透光部分 473 仍为蓝、 绿光, 所述红光与蓝、 绿光合成白光。
作为一可替代方案, 所述白色转换单元 47也可以设置为蓝光 CF+绿光 CF+红光 CCM混合的方式, 所述蓝、 绿光共同发光层 26发出的蓝、 绿光 经过该白色转换单元 47转换为白光。
请参阅图 6, 在该第二实施例中, 所述蓝色滤光单元 41、 绿色滤光单 元 43、 红色转换单元 45与白色转换单元 47对应一像素, 所述像素包括红 色子像素 85、 绿色子像素 83、 蓝色子像素 81、 与白色子像素 87。 所述红 色转换单元 45对应像素中的红色子像素 85, 所述绿色滤光单元 43对应像 素中的绿色子像素 83、 所述蓝色滤光单元 41对应像素中的蓝色子像素 81, 所述白色转换单元 47对应像素中的白色子像素 87。 所述红色子像素 85、 绿色子像素 83、 蓝色子像素 81与白色子像素 87分别对应一个 TFT, 以控 制每个子像素分别对应的蓝、 绿发光层 26区域是否发光。
请参阅图 7,该第二实施例的像素排布方式可为每相邻上下两行的像素 排布方式完全相同, 所述红色子像素 85、 绿色子像素 83、 蓝色子像素 81 与白色子像素 87沿水平方向从左至右依次间隔设置。
请参阅图 8, 为该第二实施例的另一种像素排布方式, 所述红色子像素 85、 绿色子像素 83、 蓝色子像素 81 与白色子像素 87沿顺时针方向依次间 隔设置。
综上所述, 本发明的彩色显示器件结构, 通过设置蓝、 绿光共同发光 层及包括蓝色滤光单元、 绿色滤光单元与红色转换单元的色彩转换层, 实 现彩色显示, 减小了发光层与整个彩色显示器件的厚度; 且蓝、 绿光共同 发光层及色彩转换层的材料可设置为有机材料, 也可设置为量子点, 使得 彩色显示器件具有色纯度高、 光效好、 稳定性高等良好性能; 同时, 由于 蓝、 绿光共同发光层制作时不需要使用精细掩膜, 两种发光材料的配比相 对容易, 使得该彩色显示器件结构的制作工艺简单, 成本较低。
以上所述, 对于本领域的普通技术人员来说, 可以根据本发明的技术 方案和技术构思作出其他各种相应的改变和变形, 而所有这些改变和变形 都应属于本发明权利要求的保护范围。

Claims

权 利 要 求
1、 一种彩色显示器件结构, 包括基板、 形成于基板上的阳极、 形成于 阳极上的薄膜晶体管阵列、 形成于薄膜晶体管阵列上的空穴注入层、 形成 于空穴注入层上的空穴传输层、 形成于空穴传输层上的发光层、 形成于发 光层上的电子传输层、 形成于电子传输层上的阴极, 设于阴极上方并与基 板贴合的盖板、 形成于盖板内侧的色彩转换层、 及用于封装基板与盖板的 密封胶框, 所述发光层为蓝、 绿光共同发光层; 所述色彩转换层包括间隔 设置的蓝色滤光单元、 绿色滤光单元与红色转换单元; 所述蓝、 绿光共同 发光层发出的蓝、 绿光经过蓝色滤光单元过滤成为蓝光, 所述蓝、 绿光共 同发光层发出的蓝、 绿光经过绿色滤光单元过滤成为绿光, 所述蓝、 绿光 共同发光层发出的蓝、 绿光经过红色转换单元转换成为红光, 从而实现彩 色显示。
2、 如权利要求 1所述的彩色显示器件结构, 其中, 所述色彩转换层还 包括一白色转换单元, 所述白色转换单元包括红色转换部分与空白透光部 分, 所述蓝、 绿光共同发光层发出的蓝、 绿光经过红色转换部分转换成为 红光, 所述蓝、 绿光共同发光层发出的蓝、 绿光透过空白透光部分仍为蓝、 绿光, 所述红光与蓝、 绿光合成白光。
3、 如权利要求 1所述的彩色显示器件结构, 其中, 所述蓝、 绿光共同 发光层的材料为有机发光材料, 所述蓝、 绿光共同发光层通过真空热蒸镀 或溶液成莫的方式形成。
4、 如权利要求 3所述的彩色显示器件结构, 其中, 所述有机发光材料 采取有机主体材料摻杂有机蓝光客体材料、 与有机绿光客体材料的方式, 所述有机主体材料为 4,4',4"-三 (咔唑 -9-基)三苯胺、 或 2, 4, 6, -三 (9H- 咔唑 -9-基) -1,3,5-三噪, 所述有机蓝光客体材料为 9,10-二 (2-萘基)蒽, 所述 有机绿光客体材料为三 (2-苯基吡啶)合铱。
5、 如权利要求 1所述的彩色显示器件结构, 其中, 所述蓝、 绿光共同 发光层的材料包括蓝光量子点与绿光量子点, 所述蓝、 绿光共同发光层采 用溶液成膜的方式形成。
6、 如权利要求 5所述的彩色显示器件结构, 其中, 所述蓝光量子点为 量子点疏化锌鎘、 硒化鎘 /疏化锌、 或纳米氮化硅, 所述绿光量子点为量子 点硒化鎘 /疏化锌、 或硒化锌摻杂铜离子。
7、 如权利要求 5所述的彩色显示器件结构, 其中, 所述蓝、 绿光共同 发光层的材料还包括有机主体材料, 该有机主体材料为 4,4',4"-三 (咔唑 -9- 基)三苯胺、 或 2, 4, 6, -三 (9H-咔唑 -9-基) -1,3,5-三嗪, 所述有机主体材 料与蓝光量子点、 绿光量子点颗粒及溶剂混合, 涂覆并挥发去除溶剂后形 成所述蓝、 绿光共同发光层。
8、 如权利要求 1所述的彩色显示器件结构, 其中, 所述色彩转换层的 材料为有机荧光材料。
9、 如权利要求 1所述的彩色显示器件结构, 其中, 所述色彩转换层的 材料为量子点, 所述蓝色滤光单元的材料为量子点疏化锌鎘、 硒化鎘 /疏化 锌、 或纳米氮化硅, 所述绿色滤光单元的材料为量子点硒化鎘 /疏化锌、 或 硒化锌摻杂铜离子, 所述红色转换单元的材料为量子点硒化鎘 /疏化鎘 /疏化 锌。
10、 如权利要求 8 所述的彩色显示器件结构, 其中, 所述蓝色滤光单 元、 绿色滤光单元与红色转换单元的表面具有表面包覆剂, 所述表面包覆 剂为硬脂酸、 氧化三锌基膦、 或聚甲基丙烯酸甲酯; 将所述量子点与表面 包覆剂及溶剂混合, 涂覆并挥发去除溶剂后得到所述蓝色滤光单元、 绿色 滤光单元、 与红色转换单元。
11、 一种彩色显示器件结构, 包括基板、 形成于基板上的阳极、 形成 于阳极上的薄膜晶体管阵列、 形成于薄膜晶体管阵列上的空穴注入层、 形 成于空穴注入层上的空穴传输层、 形成于空穴传输层上的发光层、 形成于 发光层上的电子传输层、 形成于电子传输层上的阴极, 设于阴极上方并与 基板贴合的盖板、 形成于盖板内侧的色彩转换层、 及用于封装基板与盖板 的密封胶框, 所述发光层为蓝、 绿光共同发光层; 所述色彩转换层包括间 隔设置的蓝色滤光单元、 绿色滤光单元与红色转换单元; 所述蓝、 绿光共 同发光层发出的蓝、 绿光经过蓝色滤光单元过滤成为蓝光, 所述蓝、 绿光 共同发光层发出的蓝、 绿光经过绿色滤光单元过滤成为绿光, 所述蓝、 绿 光共同发光层发出的蓝、 绿光经过红色转换单元转换成为红光, 从而实现 彩色显示;
其中, 所述蓝、 绿光共同发光层的材料为有机发光材料, 所述蓝、 绿 光共同发光层通过真空热蒸镀或溶液成膜的方式形成;
其中, 所述有机发光材料采取有机主体材料摻杂有机蓝光客体材料、 与有机绿光客体材料的方式, 所述有机主体材料为 4,4',4"-三 (咔唑 -9-基)三 苯胺、 或 2, 4, 6, -三 (9H-咔唑 -9-基) -1,3,5-三噪, 所述有机蓝光客体材 料为 9,10-二 (2-萘基)蒽, 所述有机绿光客体材料为三 (2-苯基比啶)合铱; 其中, 所述蓝、 绿光共同发光层的材料包括蓝光量子点与绿光量子点, 所述蓝、 绿光共同发光层采用溶液成膜的方式形成;
其中, 所述蓝光量子点为量子点疏化锌鎘、 ί西化鎘 /疏化锌、 或纳米氮 化硅, 所述绿光量子点为量子点硒化鎘 /疏化锌、 或硒化锌摻杂铜离子; 其中, 所述蓝、 绿光共同发光层的材料还包括有机主体材料, 该有机 主体材料为 4,4',4"-三 (咔唑 -9-基)三苯胺、 或 2, 4, 6, -三 (9Η-咔唑 -9-基) -1,3,5-三嗪,所述有机主体材料与蓝光量子点、绿光量子点颗粒及溶剂混合, 涂覆并挥发去除溶剂后形成所述蓝、 绿光共同发光层;
其中, 所述色彩转换层的材料为有机荧光材料;
其中, 所述色彩转换层的材料为量子点, 所述蓝色滤光单元的材料为 量子点疏化锌鎘、 硒化鎘 /疏化锌、 或纳米氮化硅, 所述绿色滤光单元的材 料为量子点硒化鎘 /疏化锌、 或硒化锌摻杂铜离子, 所述红色转换单元的材 料为量子点硒化鎘 /疏化鎘 /疏化锌;
其中, 所述蓝色滤光单元、 绿色滤光单元与红色转换单元的表面具有 表面包覆剂, 所述表面包覆剂为硬脂酸、 氧化三锌基膦、 或聚甲基丙烯酸 甲酯; 将所述量子点与表面包覆剂及溶剂混合, 涂覆并挥发去除溶剂后得 到所述蓝色滤光单元、 绿色滤光单元、 与红色转换单元。
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