WO2016011683A1 - 石墨烯球导电胶的制备方法及该石墨烯球导电胶 - Google Patents

石墨烯球导电胶的制备方法及该石墨烯球导电胶 Download PDF

Info

Publication number
WO2016011683A1
WO2016011683A1 PCT/CN2014/084332 CN2014084332W WO2016011683A1 WO 2016011683 A1 WO2016011683 A1 WO 2016011683A1 CN 2014084332 W CN2014084332 W CN 2014084332W WO 2016011683 A1 WO2016011683 A1 WO 2016011683A1
Authority
WO
WIPO (PCT)
Prior art keywords
epoxy resin
graphene
weight
bisphenol
polymer microspheres
Prior art date
Application number
PCT/CN2014/084332
Other languages
English (en)
French (fr)
Inventor
李泳锐
张霞
李吉
陈雅惠
Original Assignee
深圳市华星光电技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳市华星光电技术有限公司 filed Critical 深圳市华星光电技术有限公司
Priority to KR1020197011217A priority Critical patent/KR102050200B1/ko
Priority to GB1700828.5A priority patent/GB2542318B/en
Priority to KR1020197011215A priority patent/KR102050198B1/ko
Priority to KR1020177004229A priority patent/KR101980983B1/ko
Priority to US14/398,978 priority patent/US9725625B2/en
Priority to JP2017502847A priority patent/JP6369921B2/ja
Priority to KR1020197011216A priority patent/KR102050199B1/ko
Publication of WO2016011683A1 publication Critical patent/WO2016011683A1/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2/00—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic
    • B01J2/003—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic followed by coating of the granules
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2/00—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic
    • B01J2/02—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic by dividing the liquid material into drops, e.g. by spraying, and solidifying the drops
    • B01J2/06—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic by dividing the liquid material into drops, e.g. by spraying, and solidifying the drops in a liquid medium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/184—Preparation
    • C01B32/186—Preparation by chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4417—Methods specially adapted for coating powder
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/30—Particle morphology extending in three dimensions
    • C01P2004/32—Spheres
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/001—Conductive additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/04—Carbon
    • C08K3/042—Graphene or derivatives, e.g. graphene oxides
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00—Use of pretreated ingredients
    • C08K9/12—Adsorbed ingredients, e.g. ingredients on carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2400/00—Presence of inorganic and organic materials
    • C09J2400/10—Presence of inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2463/00—Presence of epoxy resin

Definitions

  • the present invention relates to the field of liquid crystal display technologies, and in particular, to a method for preparing a graphene ball conductive paste and the graphene ball conductive paste. Background technique
  • TFT-LCDs thin film transistor liquid crystal displays
  • CF color filter
  • Driving is achieved by a driver chip that is pressed against the single substrate.
  • conductive dots are generally composed of a thermosetting epoxy resin, glass fibers, and 1 wt% to 2 wt% of conductive gold balls.
  • the Au ball is a spherical or elastic polymer material (such as acrylic resin) with a uniform particle size. The surface is first plated with nickel by chemical method, and then replaced with a layer of gold.
  • a conductive plastic microparticle with good elastic deformation performance generally having a diameter of 5 ⁇ 8 ⁇ , and a conductivity requirement of l ⁇ xlO ⁇ cm" 1.
  • the process of preparing a conductive gold ball by a conventional electroless plating method that is, first performing a process on a substrate Cleaning, micro-etching, sensitizing, and activating the surface of the substrate to modify the active center palladium which can initiate a chemical reaction, and then electroless plating nickel and gold, which is also a commonly used process for preparing conductive gold balls in the industry.
  • Defects First, polymer matrix The surface of the material will adsorb some tin ions due to the sensitization process, which may affect the adhesion and uniformity of the nickel coating.
  • the autocatalytic redox reaction of the electroless gold plating process is: Au(CN) 2 -+M ⁇ Au +Ni 2+ +2CN" , nickel ions are generated in the plating solution as the reaction proceeds, and in order to control the crystal structure of the plating layer, ppm-level cobalt ions are added to the plating solution, and these free metal ions may cause the polymer.
  • the agglomeration of the microsphere matrix adversely affects the gold plating process;
  • the gold salt used in the gold plating process is mostly cyanide, which is very toxic; in addition, after two electroless plating processes, the metal nickel (M) is recycled. It is difficult to use, and direct disposal is not conducive to environmental protection.
  • the patent CN102352495B adopts a layer-by-layer self-assembly method, which discards stannous chloride and highly toxic cyanide, and adsorbs positively charged polymerization on the surface of the micro-etched polymer matrix.
  • the material is placed in a negatively charged precious metal sol (gold or platinum sol), and finally a gold plating is applied on the surface of the microsphere by electroless plating.
  • This method simplifies the pretreatment process and obtains a smooth gold layer on the surface of the microsphere.
  • Hotspots are widely used in lithium-ion batteries, supercapacitors, solar cells, semiconductors, liquid crystal displays, Fields such as sensors.
  • Patent EP2537801A1 pre-bakes organic compounds in a closed container, and the organic matter is cleaved to produce a gas containing carbon and hydrogen. After subsequent hot isostatic pressing (HIP), graphene having a thickness of about 1 ⁇ grown in the voids and surface of the organic material is obtained. flower.
  • a graphene flower with an organic core is added to a solvent, and after ultrasonication, a graphene dispersion is obtained.
  • This method is an effective method for rapidly and mass-generating high-quality graphene, and the resulting graphene flower maintains the high conductivity characteristic unique to graphene.
  • the object of the present invention is to provide a method for preparing a graphene ball conductive adhesive.
  • the method has the advantages of simple process, abundant raw materials and low price, and is non-toxic and harmless, and is environmentally friendly.
  • Another object of the present invention is to provide a graphene ball conductive adhesive which has the advantages of unique structure, excellent electrical conductivity and environmental friendliness, and can be used for replacing conductive gold balls in TFT-LCD, and can also be used for other conductive point materials.
  • the present invention provides a method for preparing a graphene ball conductive paste, comprising the following steps:
  • Step 1 Providing a monomer, an initiator, a dispersing agent and a solvent to prepare a monomer mixture, and using the monomer mixture to prepare a polymer microsphere;
  • Step 2 heating or plasma etching the polymer microspheres
  • Step 3 The surface of the polymer microspheres pretreated in step 2 by chemical vapor deposition Or internally coating or growing graphene to obtain a graphene ball;
  • Step 4 Weigh a certain proportion of epoxy resin, curing agent and accelerator, mix and stir until dispersed evenly, and obtain epoxy resin glue system;
  • Step 5 Dispersing the graphene balls prepared in the step 3 in the epoxy resin glue system to obtain a graphene ball conductive rubber preparation material
  • Step 6 Defoaming the graphene ball conductive rubber preparation material to obtain a graphene ball conductive paste.
  • the monomer is acrylic acid, styrene, methyl methacrylate or divinyl benzene;
  • the initiator is one or two of azobisisobutyronitrile or benzoyl peroxide. a mixture;
  • the dispersant is polyvinylpyrrolidone, polyethylene glycol, polyethyl alcohol or polyacrylic acid;
  • the solvent is a mixture of one or more of ethanol, methanol or isopropanol and water.
  • the amount of the monomer is from 8 wt% to 42 wt% of the monomer mixture; the amount of the initiator is from 0.11 wt% to 5.2 wt% of the monomer mixture; the amount of the dispersant is in the single 4.9wt% ⁇ 21wt% of the mixture; 3wt% ⁇ 56wt% 0 the amount of the solvent monomer mixture of
  • the heating pretreatment method is: pretreating the polymer microspheres in an inert atmosphere at 100-500 ° C for 0.5-5 h to obtain porous polymer microspheres.
  • the plasma etching pretreatment method is: etching the polymer microspheres by a reactive coupling plasma, wherein the reaction coupling plasma is sulfur hexafluoride and oxygen, at 80- The polymer microspheres after activation were obtained by pretreating 2 mm - lh at 150 °C.
  • the specific steps of the chemical vapor deposition method are: placing the polymer microspheres pretreated in step 2 in a chemical vapor deposition reaction chamber, and vacuuming the cavity, and then introducing into the cavity.
  • a mixed gas composed of methane, hydrogen and other auxiliary gases which is subjected to the polymer microspheres pretreated in step 2 by one or more of infrared rays, heat radiation, laser, microwave, plasma, ultraviolet or thermal induction methods. Heating is performed to generate graphite whipped on the surface or inside of the polymer microspheres.
  • the volume ratio of the methane to the mixed gas is 1% to 10%; the volume ratio of the hydrogen to the mixed gas is 50% - 99%; and the other auxiliary gas is water vapor, nitrogen or argon. One or several.
  • the epoxy resin is bisphenol A epoxy resin E44, bisphenol A epoxy resin E51, bisphenol A epoxy resin E54, bisphenol A epoxy resin EPON826 or bisphenol A type epoxy resin EPON828;
  • the curing agent is hexahydrophthalic anhydride, tetrahydrophthalic anhydride, succinic acid hydrazide, adipic acid hydrazide, dicyandiamide or p-phenylenediamine;
  • the promoter is di-ethyl-tetramethylimidazole, imidazole, dimethylimidazole or triethylamine;
  • the epoxy resin is used in an amount of 80% by weight to 95% by weight of the epoxy resin adhesive system;
  • the curing agent is used in an amount of 1% by weight to 12% by weight of the epoxy resin adhesive system;
  • the epoxy resin gum system is from 0.3% by weight to 5% by weight.
  • the mass ratio of the epoxy resin system to the graphene ball is 100 : 2 ⁇
  • the present invention also provides a graphene ball conductive adhesive, comprising a graphene ball and an epoxy resin glue system, wherein the mass ratio of the epoxy resin glue system to the graphene ball is 100 : 2 ⁇ 30;
  • the resin glue system comprises an epoxy resin, a curing agent and a promoter;
  • the epoxy resin is a bisphenol A type epoxy resin E44, a bisphenol A type epoxy resin E51, a bisphenol A type epoxy resin E54, a bisphenol A Epoxy resin EPON826 or bisphenol A epoxy resin EPON828;
  • the epoxy resin is used in an amount of 80% by weight to 95% by weight of the epoxy resin adhesive system;
  • the curing agent is hexahydrophthalic anhydride, Tetrahydrophthalic anhydride, succinic acid hydrazide, adipic acid hydrazide, dicyandiamide or p-phenylenediamine;
  • the curing agent is used in an amount of from 1% by weight to 12%
  • the invention also provides a preparation method of graphene ball conductive adhesive, comprising the following steps: Step 1. Providing a monomer, an initiator, a dispersing agent and a solvent to prepare a monomer mixture, and adopting The monomer mixture produces polymer microspheres;
  • the monomer is acrylic acid, styrene, methyl methacrylate or divinyl benzene, and the monomer is used in an amount of 8 wt% to 42 wt% of the monomer mixture;
  • the initiator is a mixture of one or both of azobisisobutyronitrile or benzoyl peroxide, and the initiator is used in an amount of 0.11% by weight to 5.2% by weight of the monomer mixture;
  • the dispersing agent is polyvinylpyrrolidone, polyethylene glycol, polyethyl alcohol or polyacrylic acid, and the dispersing agent is used in an amount of 4.9 wt% to 21 wt% of the monomer mixture;
  • the solvent is a mixture of one or more of ethanol, methanol or isopropanol and water, and the solvent is used in an amount of from 3 wt% to 56 wt% of the monomer mixture;
  • Step 2 heating or plasma etching the polymer microspheres
  • the heating pretreatment method is: pretreating the polymer microspheres in an inert atmosphere (nitrogen or argon) at 100-500 ° C for 0.5-5 h to obtain porous polymer microspheres;
  • the plasma etching pretreatment method comprises: etching the polymer microspheres by a reactive coupling plasma, wherein the reaction coupling plasma is sulfur hexafluoride and oxygen, and pretreatment at 80-150 ° C 2mm - lh, the activated polymer microspheres are obtained;
  • Step 3 using a chemical vapor deposition method to coat or grow graphene on the surface or inside of the polymer microspheres pretreated in step 2 to obtain a graphene sphere;
  • the specific steps of the chemical vapor deposition method are: placing the polymer microspheres pretreated in step 2 in a chemical vapor deposition (CVD) reaction chamber, and after vacuuming the cavity, introducing methane into the cavity, a mixed gas composed of hydrogen and other auxiliary gas, which is heated by one or more of infrared rays, heat radiation, laser light, microwave, plasma, ultraviolet light or thermal induction method, and the polymer microspheres pretreated by the step 2 are heated.
  • CVD chemical vapor deposition
  • the volume ratio of the methane to the mixed gas is 1% to 10%; and the volume ratio of the hydrogen to the mixed gas is 50% - 99%;
  • the other auxiliary gas is one or more of water vapor (H 2 0 nitrogen (N 2 ) or argon ( Ar );
  • the number of graphene growth layers can be controlled by adjusting the flow rate of the mixed gas in the CVD cavity, and the graphene balls having the best conductivity can be obtained through process optimization;
  • Step 4 providing an epoxy resin, a curing agent, an accelerator, mixing and stirring until uniformly dispersed, to obtain an epoxy resin adhesive system;
  • the epoxy resin is bisphenol A epoxy resin E44, bisphenol A epoxy resin E51, bisphenol A epoxy resin E54, bisphenol A epoxy resin EPON826 or bisphenol A epoxy resin EPON828
  • the epoxy resin is used in an amount of 80% by weight to 95% by weight of the epoxy resin adhesive system;
  • the curing agent is hexahydrophthalic anhydride, tetrahydrophthalic anhydride, succinic acid hydrazide, Adipic acid hydrazide, dicyandiamide or p-phenylenediamine;
  • the amount of the curing agent is in the epoxy resin colloid Lwt% - 12wt%;
  • the promoter is di-ethyl-tetramethylimidazole, imidazole, dimethylimidazole or triethylamine.
  • the accelerator is used in an amount of 0.3% by weight to 5% by weight of the epoxy resin system;
  • Step 5 Dispersing the graphene balls prepared in the step 3 in the epoxy resin glue system to obtain a graphene ball conductive rubber preparation material
  • the mass ratio of the epoxy resin gel system to the graphene sphere is 100: 2 ⁇ 30; Step 6.
  • the graphene ball conductive rubber preparation material is defoamed to obtain a graphene ball conductive paste.
  • the invention has the beneficial effects that the method for preparing the graphene ball conductive adhesive of the invention adopts the CVD method to grow graphene on the surface or inside of the polymer microsphere to obtain a graphene ball, and the graphene ball and the epoxy resin glue system are determined according to a certain degree. After the ratio is mixed, a graphene ball conductive paste is prepared.
  • the method has the advantages of simple process, abundant raw materials and low price, and is non-toxic and harmless, and is environmentally friendly.
  • the magnetene ball conductive adhesive of the invention has the advantages of unique structure, excellent electrical conductivity and environmental friendliness, and can be used for
  • the TFT-LCD replaces the conductive gold ball, and can also be used for other conductive point materials, such as anisotropic conductive adhesive (ACP) and anisotropic conductive film (ACF), etc., which has great commercial development value and market application prospects.
  • ACP anisotropic conductive adhesive
  • ACF anisotropic conductive film
  • FIG. 1 is a flow chart of a method for preparing a graphene ball conductive paste of the present invention. detailed description
  • the present invention provides a method for preparing a graphene ball conductive paste, comprising the following steps:
  • Step 1 Providing a monomer, an initiator, a dispersing agent and a solvent to prepare a monomer mixture, and using the monomer mixture to prepare a polymer microsphere;
  • the monomer is acrylic acid, styrene, methyl methacrylate or divinyl benzene, and the monomer is used in an amount of 8 wt% to 42 wt% of the monomer mixture;
  • the initiator is a mixture of one or both of azobisisobutyronitrile or benzoyl peroxide, and the initiator is used in an amount of 0.11% by weight to 5.2% by weight of the monomer mixture;
  • the dispersing agent is polyvinylpyrrolidone, polyethylene glycol, polyethyl alcohol or polyacrylic acid, the dispersing agent is used in an amount of 4.9 wt% to 21 wt% of the monomer mixture;
  • the solvent is a mixture of water with one or more of ethanol, methanol or isopropanol, 3wt% of the amount of the solvent monomer mixture of - 56wt% 0
  • Step 2 heating or plasma etching the polymer microspheres
  • the heating pretreatment method is: pretreating the polymer microspheres in an inert atmosphere (nitrogen or argon) at 100-500 ° C for 0.5-5 h to obtain porous polymer microspheres.
  • an inert atmosphere nitrogen or argon
  • the plasma etching pretreatment method comprises: etching the polymer microspheres by a reactive coupling plasma, wherein the reaction coupling plasma is sulfur hexafluoride and oxygen, and pretreatment at 80-150 ° C 2mm - lh , the activated polymer microspheres were obtained.
  • Step 3 Using a chemical vapor deposition method to coat or grow graphene on the surface or inside of the polymer microspheres pretreated in step 2 to obtain a graphene sphere;
  • the specific steps of the chemical vapor deposition method are: placing the polymer microspheres pretreated in step 2 in a chemical vapor deposition (CVD) reaction chamber, and after vacuuming the cavity, introducing methane into the cavity, a mixed gas composed of hydrogen and other auxiliary gas, which is heated by one or more of infrared rays, heat radiation, laser light, microwave, plasma, ultraviolet light or thermal induction method, and the polymer microspheres pretreated by the step 2 are heated.
  • CVD chemical vapor deposition
  • the volume ratio of the methane to the mixed gas is 1% to 10%; and the volume ratio of the hydrogen to the mixed gas is 50% - 99%;
  • the other auxiliary gas is water vapor (H 2 0 nitrogen (N 2 ) Or one or more of argon (Ar).
  • the number of graphene growth layers can be controlled by adjusting the flow rate of the mixed gas in the CVD cavity, and the graphene balls having the best conductivity can be obtained by process optimization.
  • Step 4 providing an epoxy resin, a curing agent, an accelerator, mixing and stirring until uniformly dispersed, to obtain an epoxy resin adhesive system;
  • the epoxy resin is bisphenol A epoxy resin E44, bisphenol A epoxy resin E51, bisphenol A epoxy resin E54, bisphenol A epoxy resin EPON826 or bisphenol A epoxy resin EPON828
  • the epoxy resin is used in an amount of 80% by weight to 95% by weight of the epoxy resin adhesive system;
  • the curing agent is hexahydrophthalic anhydride, tetrahydrophthalic anhydride, succinic acid hydrazide, Adipic acid hydrazide, dicyandiamide or p-phenylenediamine;
  • the curing agent is used in an amount of from 1% by weight to 12% by weight of the epoxy resin system;
  • the promoter is di-ethyl-tetramethylimidazole, imidazole, dimethylimidazole or triethylamine.
  • the accelerator is used in an amount of from 0.3% by weight to 5% by weight based on the epoxy resin system.
  • Step 5 Dispersing the graphene balls prepared in the step 3 in the epoxy resin glue system to obtain a graphene ball conductive rubber preparation material
  • the mass ratio of the epoxy resin system to the graphene ball is 100: 2 ⁇ 30.
  • Step 6 Defoaming the graphene ball conductive rubber preparation material to obtain a graphene ball Conductive plastic.
  • the present invention also provides a graphene ball conductive adhesive, comprising a graphene ball and an epoxy resin glue system, wherein the mass ratio of the epoxy resin glue system to the graphene ball is 100 : 2 ⁇ 30;
  • the resin glue system comprises an epoxy resin, a curing agent and a promoter;
  • the epoxy resin is a bisphenol A type epoxy resin E44, a bisphenol A type epoxy resin E51, a bisphenol A type epoxy resin E54, a bisphenol A Epoxy resin EPON826 or bisphenol A epoxy resin EPON828;
  • the epoxy resin is used in an amount of 80% by weight to 95% by weight of the epoxy resin adhesive system;
  • the curing agent is hexahydrophthalic anhydride, Tetrahydrophthalic anhydride, succinic acid hydrazide, adipic acid hydrazide, dicyandiamide or p-phenylenediamine;
  • the curing agent is used in an amount of from 1% by weight to 12%
  • the method for preparing the graphene ball conductive adhesive of the present invention uses the CVD method to grow graphene on the surface or inside of the polymer microsphere to obtain a graphene ball, and the graphene ball and the epoxy resin glue system are proportionally distributed. After mixing, a graphene ball conductive paste was prepared.
  • the method is simple in process, rich in raw materials, low in price, and non-toxic and harmless, and is environmentally friendly.
  • the stannous chloride and toxic gold salt used in the electroless plating method can be avoided compared with the conventional electroless plating method for preparing the conductive gold ball; the raw material used for preparing the graphene by the CVD method is a widely sourced and easily prepared hydrocarbon.
  • the expensive metal sol, gold salt and the like are expensive; at the same time, the method does not require the use of stannous chloride to sensitize the substrate, thereby avoiding the interference of tin ions on the coating.
  • the graphene ball conductive adhesive of the invention has the advantages of unique structure, excellent electrical conductivity and environmental friendliness, and can be used for replacing conductive gold balls in TFT-LCD, and can also be used for other conductive point materials, such as anisotropic conductive adhesive (ACP) and Anisotropic conductive film (ACF), etc., has great commercial development value and market application prospects.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Nanotechnology (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Conductive Materials (AREA)
  • Polymerisation Methods In General (AREA)
  • Graft Or Block Polymers (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

一种石墨烯球导电胶的制备方法及该石墨烯球导电胶，所述石墨烯球导电胶的制备方法包括以下步骤：步骤1、提供单体、引发剂、分散剂和溶剂制备一单体混合物，并采用该单体混合物制得高分子微球；步骤2、对所述高分子微球进行加热或等离子刻蚀预处理；步骤3、采用化学气相沉积方法在经步骤2预处理过的高分子微球表面或内部包覆或生长石墨烯，制得石墨烯球；步骤4、称取一定比例的环氧树脂、固化剂、促进剂，混合搅拌至分散均匀，制得环氧树脂胶体系；步骤5、将步骤3制得的石墨烯球分散于所述环氧树脂胶体系中，获得石墨烯球导电胶预备材料；步骤6、将所述石墨烯球导电胶预备材料进行脱泡处理，得到石墨烯球导电胶。

Description

石墨烯球导电胶的制备方法及该石墨烯球导电胶 技术领域
本发明涉及液晶显示器技术领域，尤其涉及一种石墨烯球导电胶的制 备方法及该石墨烯球导电胶。 背景技术
现有大多数薄膜晶体管液晶显示器（ TFT-LCD )都是采用单边引出电 极的方式，通过导电点将 Array (阵列 )侧和 CF (彩色滤光片 )侧的共通 电极连接到同一玻璃基板上，通过压贴在该单一基板上的驱动芯片实现驱 动。 这种导电点一般由热固型环氧树脂、 玻璃纤维及 lwt%~2wt%的导电金 球构成。 导电金球 ( Au ball )是以粒径均匀的球状、 有弹性的高分子材料 (例如丙烯酸树脂）为基体，通过化学法先在其表面镀一层镍，而后置换 镀上一层金，形成一种弹性形变性能良好的导电塑料微粒子，它的直径一 般为 5~8μπι ,电导率要求达到 l^xlO^cm"1.传统的化学镀法制备导电金球 的过程，即先通过对基体进行清洗、 微蚀、 敏化、 活化使基体表面修饰上 可以引发化学反应的活性中心钯，再化学镀镍和金，这也是目前工业上常 用的制备导电金球的工艺。 但这种方法存在一些缺陷：其一，高分子基体 材料表面因敏化过程而会吸附一些锡离子，可能会影响镍镀层的附着力和 均一性；其二，由于化学镀金过程的自催化氧化还原反应为： Au(CN)2-+M →Au+Ni2++2CN" ,随着反应的进行，镀液中会产生镍离子，而为了控制镀 层的结晶结构，镀液中会加入 ppm级钴离子，这些游离的金属离子可能会 引起高分子微球基体的团聚，对镀金过程产生不利影响；其三，镀金过程 中使用的金盐大多是氰化物，毒性非常大；另外，经过两次化学镀工艺后 , 金属镍 (M)的回收再利用比较困难，而直接废弃则不利于环境保护。
为解决化学镀法制备导电金球的上述缺陷，专利 CN102352495B采用 逐层自组装法，舍弃了氯化亚锡和剧毒的氰化物，在微蚀后的高分子基体 表面吸附带正电的聚合物，将其置于带负电的贵金属溶胶中（金或铂溶胶 ) , 最后通过化学镀法在微球表面镀一层金，该法简化了预处理工艺，得到的 微球表面的金层光滑致密，但该法要得到壳厚为几百埃的核壳粒子需要反 复进行繁琐的沉积、 提纯等操作，比较费时，而且贵金属溶胶使用量大、 价格昂贵，因而该法成本较高。
石墨烯由于具有高的电导率（ lO^cm—1 λ大的载流子迁移率（ lO V"1 s— 1 X 好的机械性能（ 106°GPa )和优异的柔韧性而成为硏究的热点，被广 泛应用于锂离子电池、 超级电容器、 太阳能电池、 半导体、 液晶显示器、 传感器等领域。 专利 EP2537801A1在密闭容器中对有机化合物预烤，有机 物裂解产生含碳和氢的气体，经过随后的热等静压处理 (HIP) ,得到生长在有 机物空隙和表面的厚度约为 1匪的石墨烯花。 将带有机物内核的石墨烯花 加入溶剂中，经过超声，即可得到石墨烯分散液。 该法是快速大量生成高 质量石墨烯的一种有效方法，所生成的石墨烯花保持有石墨烯特有的高电 导率特性。 发明内容
本发明的目的在于提供一种石墨烯球导电胶的制备方法，该方法工艺 简单，使用的原料来源丰富、 价格低廉，且都无毒无害，利于环保。
本发明的目的还在于提供一种石墨烯球导电胶，具有结构独特、 导电 性能优异、 环境友好等优点，可用于 TFT-LCD中取代导电金球，也可用于 其它导电点材料。 为实现上述目的，本发明提供一种石墨烯球导电胶的制 备方法，包括如下步骤：
步骤 1、 提供单体、 引发剂、分散剂和溶剂制备一单体混合物，并采用 该单体混合物制得高分子微球；
步骤 2、 对所述高分子微球进行加热或等离子刻蚀预处理；
步骤 3、采用化学气相沉积方法在经步骤 2预处理过的高分子微球表面 或内部包覆或生长石墨烯，制得石墨烯球；
步骤 4、称取一定比例的环氧树脂、 固化剂、 促进剂，混合搅拌至分散 均匀，制得环氧树脂胶体系；
步骤 5、将步骤 3制得的石墨烯球分散于所述环氧树脂胶体系中，获得 石墨烯球导电胶预备材料；
步骤 6、将所述石墨烯球导电胶预备材料进行脱泡处理，得到石墨烯球 导电胶。
所述步骤 1 中，所述单体是丙烯酸、 苯乙烯、 甲基丙烯酸甲酯或二乙 烯基苯；所述引发剂是偶氮二异丁腈或过氧化苯甲酰中的一种或二者的混 合物；所述分散剂是聚乙烯吡咯烷酮、 聚乙二醇、 聚乙醇或聚丙烯酸；所 述溶剂是乙醇、 甲醇或异丙醇中的一种或几种与水的混合物。
所述单体的用量占所述单体混合物的 8wt% ~ 42wt%；所述引发剂的用 量占所述单体混合物的 0.11wt% ~ 5.2wt%；所述分散剂的用量占所述单体混 合物的 4.9wt% ~ 21wt%；所述溶剂的用量占所述单体混合物的 3wt% ~ 56wt%0
所述步骤 2中，所述加热预处理的方法为：将所述高分子微球在情性 气氛， 100-500°C下预处理 0.5-5h ,得到多孔的高分子微球。 所述步骤 2中，所述等离子刻蚀预处理的方法为：用反应耦合等离子 体对所述高分子微球进行刻蚀，所述反应耦合等离子体为六氟化硫和氧气， 在 80-150°C下预处理 2mm - lh ,得到活化后的高分子微球。
所述步骤 3中，所述化学气相沉积方法的具体步骤为：将经步骤 2预 处理过的高分子微球置于化学气相沉积反应腔体内，对腔体抽真空后，向 腔体内通入由甲烷、 氢气及其它辅助气体组成的混合气体，采用红外线、 热辐射、 激光、 微波、 等离子体、 紫外线或热感应方法中的一种或几种对 经步骤 2预处理过的高分子微球进行加热，在高分子微球表面或内部生成 石墨火希。
所述甲烷占所述混合气体的体积比为 1% ~ 10%；所述氢气占所述混合 气体的体积比为 50% - 99%；所述其它辅助气体为水蒸汽、 氮气或氩气中 的一种或几种。
所述步骤 4中，所述环氧树脂是双酚 A型环氧树脂 E44、 双酚 A型环 氧树脂 E51、双酚 A型环氧树脂 E54、双酚 A型环氧树脂 EPON826或双酚 A型环氧树脂 EPON828；所述固化剂是六氢邻苯二甲酸酐、 四氢邻苯二甲 酸酐、 丁二酸酰肼、 己二酸酰肼、 双氰胺或对苯二胺；所述促进剂是二-乙 基-四甲基咪唑、 咪唑、 二甲基咪唑或三乙胺； 所述环氧树脂的用量占所述环氧树脂胶体系的 80wt% ~ 95wt%；所述 固化剂的用量占所述环氧树脂胶体系的 lwt% ~ 12wt%；所述促进剂的用量 占所述环氧树脂胶体系的 0.3wt% - 5wt%。
所述步骤 5中，所述环氧树脂胶体系与石墨烯球的质量比为 100 : 2 ~
30。
本发明还提供一种石墨烯球导电胶，包括石墨烯球和环氧树脂胶体系， 其中，所述环氧树脂胶体系与石墨烯球的质量比为 100 : 2 ~ 30；所述环氧 树脂胶体系包括环氧树脂、 固化剂和促进剂；所述环氧树脂是双酚 A型环 氧树脂 E44、 双酚 A型环氧树脂 E51、 双酚 A型环氧树脂 E54、 双酚 A型 环氧树脂 EPON826或双酚 A型环氧树脂 EPON828；所述环氧树脂的用量 占所述环氧树脂胶体系的 80wt% ~ 95wt%；所述固化剂是六氢邻苯二甲酸 酐、 四氢邻苯二甲酸酐、 丁二酸酰肼、 己二酸酰肼、 双氰胺或对苯二胺； 所述固化剂的用量占所述环氧树脂胶体系的 lwt% ~ 12wt%；所述促进剂是 二-乙基-四甲基咪唑、 咪唑、 二甲基咪唑或三乙胺；所述促进剂的用量占所 述环氧树脂胶体系的 0.3wt% - 5%wt%0
本发明还提供一种石墨烯球导电胶的制备方法，包括以下步骤： 步骤 1、 提供单体、 引发剂、分散剂和溶剂制备一单体混合物，并采用 该单体混合物制得高分子微球；
其中，所述单体是丙烯酸、 苯乙烯、 甲基丙烯酸甲酯或二乙烯基苯， 所述单体的用量占所述单体混合物的 8wt% ~ 42wt%；
所述引发剂是偶氮二异丁腈或过氧化苯甲酰中的一种或二者的混合 物，所述引发剂的用量占所述单体混合物的 0.11wt% ~ 5.2wt%；
所述分散剂是聚乙烯吡咯烷酮、 聚乙二醇、 聚乙醇或聚丙烯酸，所述 分散剂的用量占所述单体混合物的 4.9wt% ~ 21wt%；
所述溶剂是乙醇、 甲醇或异丙醇中的一种或几种与水的混合物，所述 溶剂的用量占所述单体混合物的 3wt% - 56wt%；
步骤 2、 对所述高分子微球进行加热或等离子刻蚀预处理；
所述加热预处理的方法为：将所述高分子微球在情性气氛 (氮气或氩 气）， 100-500°C下预处理 0.5-5h ,得到多孔的高分子微球；
所述等离子刻蚀预处理的方法为：用反应耦合等离子体对所述高分子 微球进行刻蚀，所述反应耦合等离子体为六氟化硫和氧气，在 80-150°C下 预处理 2mm - lh ,得到活化后的高分子微球；
步骤 3、采用化学气相沉积方法在经步骤 2预处理过的高分子微球表面 或内部包覆或生长石墨烯，制得石墨烯球； 所述化学气相沉积方法的具体步骤为：将经步骤 2预处理过的高分子 微球置于化学气相沉积（ CVD )反应腔体内，对腔体抽真空后，向腔体内 通入由甲烷、 氢气及其它辅助气体组成的混合气体，采用红外线、 热辐射、 激光、 微波、 等离子体、 紫外线或热感应方法中的一种或几种对经步骤 2 预处理过的高分子微球进行加热，在高分子微球表面或内部生成石墨烯； 所述甲烷占所述混合气体的体积比为 1% ~ 10%；所述氢气占所述混合 气体的体积比为 50% - 99%；所述其它辅助气体为水蒸汽 ( H20 氮气 (N2) 或氩气 ( Ar )中的一种或几种；
所述步骤 3中，通过调节 CVD腔体中的混合气体的流量可以控制石墨 烯生长层数，通过工艺优化得到具有最佳电导率的石墨烯球；
步骤 4、 提供环氧树脂、 固化剂、 促进剂，混合搅拌至分散均匀，制得 环氧树脂胶体系；
所述环氧树脂是双酚 A型环氧树脂 E44、 双酚 A型环氧树脂 E51、 双 酚 A型环氧树脂 E54、 双酚 A型环氧树脂 EPON826或双酚 A型环氧树脂 EPON828；所述环氧树脂的用量占所述环氧树脂胶体系的 80wt% - 95wt%； 所述固化剂是六氢邻苯二甲酸酐、 四氢邻苯二甲酸酐、 丁二酸酰肼、 己二酸酰肼、 双氰胺或对苯二胺；所述固化剂的用量占所述环氧树脂胶体 系的 lwt% - 12wt%；
所述促进剂是二-乙基-四甲基咪唑、 咪唑、 二甲基咪唑或三乙胺。 所述 促进剂的用量占所述环氧树脂胶体系的 0.3wt% - 5wt%；
步骤 5、将步骤 3制得的石墨烯球分散于所述环氧树脂胶体系中，获得 石墨烯球导电胶预备材料；
其中，所述环氧树脂胶体系与石墨烯球的质量比为 100： 2 ~ 30； 步骤 6、将所述石墨烯球导电胶预备材料进行脱泡处理，得到石墨烯球 导电胶。
本发明的有益效果：本发明的石墨烯球导电胶的制备方法采用 CVD法 在高分子微球表面或内部生长石墨烯，制得石墨烯球，将石墨烯球与环氧 树脂胶体系按一定比例混合后，制成石墨烯球导电胶。 该方法工艺简单， 使用的原料来源丰富、 价格低廉，且都无毒无害，利于环保。 本发明的石 墨烯球导电胶具有结构独特、 导电性能优异、 环境友好等优点，可用于
TFT-LCD中取代导电金球，也可用于其它导电点材料，如各向异性导电胶 ( ACP )和各向异性导电膜（ ACF )等，具有巨大的商业开发价值和市场应 用前景。 附图说明 下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明 的技术方案及其它有益效果显而易见。
附图中，
图 1为本发明石墨烯球导电胶的制备方法的流程图。 具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明 的优选实施例及其附图进行详细描述。
请参阅图 1 ,本发明提供一种石墨烯球导电胶的制备方法，包括以下步 骤：
步骤 1、 提供单体、 引发剂、分散剂和溶剂制备一单体混合物，并采用 该单体混合物制得高分子微球；
其中，所述单体是丙烯酸、 苯乙烯、 甲基丙烯酸甲酯或二乙烯基苯， 所述单体的用量占所述单体混合物的 8wt% ~ 42wt%；
所述引发剂是偶氮二异丁腈或过氧化苯甲酰中的一种或二者的混合 物，所述引发剂的用量占所述单体混合物的 0.11wt% ~ 5.2wt%；
所述分散剂是聚乙烯吡咯烷酮、 聚乙二醇、 聚乙醇或聚丙烯酸，所述 分散剂的用量占所述单体混合物的 4.9wt% ~ 21wt%； 所述溶剂是乙醇、 甲醇或异丙醇中的一种或几种与水的混合物，所述 溶剂的用量占所述单体混合物的 3wt% - 56wt%0
步骤 2、 对所述高分子微球进行加热或等离子刻蚀预处理；
所述加热预处理的方法为：将所述高分子微球在情性气氛 (氮气或氩 气）， 100-500°C下预处理 0.5-5h ,得到多孔的高分子微球。
所述等离子刻蚀预处理的方法为：用反应耦合等离子体对所述高分子 微球进行刻蚀，所述反应耦合等离子体为六氟化硫和氧气，在 80-150°C下 预处理 2mm - lh ,得到活化后的高分子微球。
步骤 3、采用化学气相沉积方法在经步骤 2预处理过的高分子微球表面 或内部包覆或生长石墨烯，制得石墨烯球；
所述化学气相沉积方法的具体步骤为：将经步骤 2预处理过的高分子 微球置于化学气相沉积（ CVD )反应腔体内，对腔体抽真空后，向腔体内 通入由甲烷、 氢气及其它辅助气体组成的混合气体，采用红外线、 热辐射、 激光、 微波、 等离子体、 紫外线或热感应方法中的一种或几种对经步骤 2 预处理过的高分子微球进行加热，在高分子微球表面或内部生成石墨烯； 所述甲烷占所述混合气体的体积比为 1% ~ 10%；所述氢气占所述混合 气体的体积比为 50% - 99%；所述其它辅助气体为水蒸汽 ( H20 氮气 (N2) 或氩气 ( Ar )中的一种或几种。
所述步骤 3中，通过调节 CVD腔体中的混合气体的流量可以控制石墨 烯生长层数，通过工艺优化得到具有最佳电导率的石墨烯球。
步骤 4、 提供环氧树脂、 固化剂、 促进剂，混合搅拌至分散均匀，制得 环氧树脂胶体系；
所述环氧树脂是双酚 A型环氧树脂 E44、 双酚 A型环氧树脂 E51、 双 酚 A型环氧树脂 E54、 双酚 A型环氧树脂 EPON826或双酚 A型环氧树脂 EPON828；所述环氧树脂的用量占所述环氧树脂胶体系的 80wt% ~ 95wt%； 所述固化剂是六氢邻苯二甲酸酐、 四氢邻苯二甲酸酐、 丁二酸酰肼、 己二酸酰肼、 双氰胺或对苯二胺；所述固化剂的用量占所述环氧树脂胶体 系的 lwt% - 12wt%；
所述促进剂是二-乙基-四甲基咪唑、 咪唑、 二甲基咪唑或三乙胺。 所述 促进剂的用量占所述环氧树脂胶体系的 0.3wt% - 5wt%。
步骤 5、将步骤 3制得的石墨烯球分散于所述环氧树脂胶体系中，获得 石墨烯球导电胶预备材料；
其中，所述环氧树脂胶体系与石墨烯球的质量比为 100： 2 ~ 30。
步骤 6、将所述石墨烯球导电胶预备材料进行脱泡处理，得到石墨烯球 导电胶。
本发明还提供一种石墨烯球导电胶，包括石墨烯球和环氧树脂胶体系， 其中，所述环氧树脂胶体系与石墨烯球的质量比为 100 : 2 ~ 30；所述环氧 树脂胶体系包括环氧树脂、 固化剂和促进剂；所述环氧树脂是双酚 A型环 氧树脂 E44、 双酚 A型环氧树脂 E51、 双酚 A型环氧树脂 E54、 双酚 A型 环氧树脂 EPON826或双酚 A型环氧树脂 EPON828；所述环氧树脂的用量 占所述环氧树脂胶体系的 80wt% ~ 95wt%；所述固化剂是六氢邻苯二甲酸 酐、 四氢邻苯二甲酸酐、 丁二酸酰肼、 己二酸酰肼、 双氰胺或对苯二胺； 所述固化剂的用量占所述环氧树脂胶体系的 lwt% ~ 12wt%；所述促进剂是 二-乙基-四甲基咪唑、 咪唑、 二甲基咪唑或三乙胺；所述促进剂的用量占所 述环氧树脂胶体系的 0.3wt% - 5%wt%0
综上所述，本发明的石墨烯球导电胶的制备方法采用 CVD法在高分子 微球表面或内部生长石墨烯，制得石墨烯球，将石墨烯球与环氧树脂胶体 系按一定比例混合后，制成石墨烯球导电胶。 该方法工艺简单，使用的原 料来源丰富、 价格低廉，且都无毒无害，利于环保。 与传统的化学镀法制 备导电金球的过程相比，可避免化学镀法中使用的氯化亚锡和有毒金盐； 由于 CVD法制备石墨烯使用的原料为来源广、易制备的碳氢化合物，可解 决贵金属溶胶、 金盐等价格昂贵的问题；同时该方法不需要使用氯化亚锡 对基体进行敏化，避免了锡离子对包覆层的干扰。 本发明的石墨烯球导电 胶具有结构独特、 导电性能优异、 环境友好等优点，可用于 TFT-LCD中取 代导电金球，也可用于其它导电点材料，如各向异性导电胶（ ACP )和各 向异性导电膜（ ACF )等，具有巨大的商业开发价值和市场应用前景。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术 方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形 都应属于本发明后附的权利要求的保护范围。

Claims

杈 利 要 求
1、 一种石墨烯球导电胶的制备方法，包括以下步骤：
步骤 1、 提供单体、 引发剂、分散剂和溶剂制备一单体混合物，并采用 该单体混合物制得高分子微球；
步骤 2、 对所述高分子微球进行加热或等离子刻蚀预处理；
步骤 3、采用化学气相沉积方法在经步骤 2预处理过的高分子微球表面 或内部包覆或生长石墨烯，制得石墨烯球；
步骤 4、称取一定比例的环氧树脂、 固化剂、 促进剂，混合搅拌至分散 均匀，制得环氧树脂胶体系；
步骤 5、将步骤 3制得的石墨烯球分散于所述环氧树脂胶体系中，获得 石墨烯球导电胶预备材料；
步骤 6、将所述石墨烯球导电胶预备材料进行脱泡处理，得到石墨烯球 导电胶。
2、 如权利要求 1所述的石墨烯球导电胶的制备方法，其中，所述步骤 1中，所述单体是丙烯酸、苯乙烯、 甲基丙烯酸甲酯或二乙烯基苯；所述引 发剂是偶氮二异丁腈或过氧化苯甲酰中的一种或二者的混合物；所述分散 剂是聚乙烯吡咯烷酮、 聚乙二醇、 聚乙醇或聚丙烯酸；所述溶剂是乙醇、 甲醇或异丙醇中的一种或几种与水的混合物。
3、 如权利要求 2所述的石墨烯球导电胶的制备方法，其中，所述单体 的用量占所述单体混合物的 8wt% ~ 42wt%；所述引发剂的用量占所述单体 混合物的 0.11wt% ~ 5.2wt%；所述分散剂的用量占所述单体混合物的 4.9wt% ~ 21wt%；所述溶剂的用量占所述单体混合物的 3wt% ~ 56wt%。
4、 如权利要求 1所述的石墨烯球导电胶的制备方法，其中，所述步骤 2 中，所述加热预处理的方法为：将所述高分子微球在情性气氛， 100-500 °〔下预处理 0.5-5h ,得到多孔的高分子微球。
5、 如权利要求 1所述的石墨烯球导电胶的制备方法，其中，所述步骤 2中，所述等离子刻蚀预处理的方法为：用反应耦合等离子体对所述高分子 微球进行刻蚀，所述反应耦合等离子体为六氟化硫和氧气，在 80-150°C下 预处理 2mm - lh ,得到活化后的高分子微球。
6、 如权利要求 1所述的石墨烯球导电胶的制备方法，其中，所述步骤 3中，所述化学气相沉积方法的具体步骤为：将经步骤 2预处理过的高分子 微球置于化学气相沉积反应腔体内，对腔体抽真空后，向腔体内通入由甲 烷、 氢气及其它辅助气体组成的混合气体，采用红外线、 热辐射、 激光、 微波、 等离子体、 紫外线或热感应方法中的一种或几种对经步骤 2预处理 过的高分子微球进行加热，在高分子微球表面或内部生成石墨烯。
7、 如权利要求 6所述的石墨烯球导电胶的制备方法，其中，所述甲烷 占所述混合气体的体积比为 1% ~ 10%；所述氢气占所述混合气体的体积比 为 50% ~ 99%；所述其它辅助气体为水蒸汽、 氮气或氩气中的一种或几种。
8、 如权利要求 1所述的石墨烯球导电胶的制备方法，其中，所述步骤 4中，所述环氧树脂是双酚 A型环氧树脂 E44、 双酚 A型环氧树脂 E51、 双酚 A型环氧树脂 E54、 双酚 A型环氧树脂 EPON826或双酚 A型环氧树 脂 EPON828 ;所述固化剂是六氢邻苯二甲酸酐、 四氢邻苯二甲酸酐、 丁二 酸酰肼、 己二酸酰肼、 双氰胺或对苯二胺；所述促进剂是二-乙基-四甲基咪 唑、 咪唑、 二甲基咪唑或三乙胺；
所述环氧树脂的用量占所述环氧树脂胶体系的 80wt% ~ 95wt%；所述 固化剂的用量占所述环氧树脂胶体系的 lwt% ~ 12wt%；所述促进剂的用量 占所述环氧树脂胶体系的 0.3wt% - 5wt%。
9、 如权利要求 1所述的石墨烯球导电胶的制备方法，其中，所述步骤 5中，所述环氧树脂胶体系与石墨烯球的质量比为 100： 2 ~ 300
10、 一种石墨烯球导电胶的制备方法，包括以下步骤：
步骤 1、 提供单体、 引发剂、分散剂和溶剂制备一单体混合物，并采用 该单体混合物制得高分子微球；
步骤 2、 对所述高分子微球进行加热或等离子刻蚀预处理；
步骤 3、采用化学气相沉积方法在经步骤 2预处理过的高分子微球表面 或内部包覆或生长石墨烯，制得石墨烯球；
步骤 4、称取一定比例的环氧树脂、 固化剂、 促进剂，混合搅拌至分散 均匀，制得环氧树脂胶体系；
步骤 5、将步骤 3制得的石墨烯球分散于所述环氧树脂胶体系中，获得 石墨烯球导电胶预备材料；
步骤 6、将所述石墨烯球导电胶预备材料进行脱泡处理，得到石墨烯球 导电胶；
其中，所述步骤 1 中，所述单体是丙烯酸、 苯乙烯、 甲基丙烯酸甲酯 或二乙烯基苯；所述引发剂是偶氮二异丁腈或过氧化苯甲酰中的一种或二 者的混合物；所述分散剂是聚乙烯吡咯烷酮、 聚乙二醇、 聚乙醇或聚丙烯 酸；所述溶剂是乙醇、 甲醇或异丙醇中的一种或几种与水的混合物； 其中，所述单体的用量占所述单体混合物的 8wt% ~ 42wt%；所述引发 剂的用量占所述单体混合物的 0.11wt% ~ 5.2wt%；所述分散剂的用量占所述 单体混合物的 4.9wt% ~ 21wt%；所述溶剂的用量占所述单体混合物的 3wt% - 56wt%；
其中，所述步骤 2中，所述加热预处理的方法为：将所述高分子微球 在情性气氛， 100-500°C下预处理 0.5-5h ,得到多孔的高分子微球；
其中，所述步骤 2中，所述等离子刻蚀预处理的方法为：用反应耦合 等离子体对所述高分子微球进行刻蚀，所述反应耦合等离子体为六氟化硫 和氧气，在 80-150°C下预处理 2mm - lh ,得到活化后的高分子微球；
其中，所述步骤 3 中，所述化学气相沉积方法的具体步骤为：将经步 骤 2预处理过的高分子微球置于化学气相沉积反应腔体内，对腔体抽真空 后，向腔体内通入由甲烷、 氢气及其它辅助气体组成的混合气体，采用红 夕卜线、 热辐射、 激光、 微波、 等离子体、 紫外线或热感应方法中的一种或 几种对经步骤 2预处理过的高分子微球进行加热，在高分子微球表面或内 部生成石墨烯；
其中，所述甲烷占所述混合气体的体积比为 1% ~ 10%；所述氢气占所 述混合气体的体积比为 50% - 99%；所述其它辅助气体为水蒸汽、 氮气或 氩气中的一种或几种；
其中，所述步骤 4中，所述环氧树脂是双酚 A型环氧树脂 E44、 双酚 A型环氧树脂 E51、 双酚 A型环氧树脂 E54、 双酚 A型环氧树脂 EPON826 或双酚 A型环氧树脂 EPON828；所述固化剂是六氢邻苯二甲酸酐、 四氢邻 苯二甲酸酐、 丁二酸酰肼、 己二酸酰肼、 双氰胺或对苯二胺；所述促进剂 是二-乙基-四甲基咪唑、 咪唑、 二甲基咪唑或三乙胺；
所述环氧树脂的用量占所述环氧树脂胶体系的 80wt% ~ 95wt%；所述 固化剂的用量占所述环氧树脂胶体系的 lwt% ~ 12wt%；所述促进剂的用量 占所述环氧树脂胶体系的 0.3wt% - 5wt%；
其中，所述步骤 5中 ,所述环氧树脂胶体系与石墨烯球的质量比为 100： 2 ~ 30。
11、 一种石墨烯球导电胶，包括石墨烯球和环氧树脂胶体系，其中， 所述环氧树脂胶体系与石墨烯球的质量比为 100 : 2 ~ 30；所述环氧树脂胶 体系包括环氧树脂、 固化剂和促进剂；所述环氧树脂是双酚 A型环氧树脂 E44、 双酚 A型环氧树脂 E51、 双酚 A型环氧树脂 E54、 双酚 A型环氧树 脂 EPON826或双酚 A型环氧树脂 EPON828；所述环氧树脂的用量占所述 环氧树脂胶体系的 80wt% ~ 95wt%；所述固化剂是六氢邻苯二甲酸酐、 四 氢邻苯二甲酸酐、 丁二酸酰肼、 己二酸酰肼、 双氰胺或对苯二胺；所述固 化剂的用量占所述环氧树脂胶体系的 lwt% ~ 12wt%；所述促进剂是二 -乙基 -四甲基咪唑、 咪唑、 二甲基咪唑或三乙胺；所述促进剂的用量占所述环氧 胶体系的 0.3wt% - 5%wt%。
PCT/CN2014/084332 2014-07-22 2014-08-14 石墨烯球导电胶的制备方法及该石墨烯球导电胶 WO2016011683A1 (zh)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020197011217A KR102050200B1 (ko) 2014-07-22 2014-08-14 그래핀볼 전도성 접착제의 제조방법 및 상기 그래핀 볼 전도성 접착제
GB1700828.5A GB2542318B (en) 2014-07-22 2014-08-14 Conductive adhesive with spherical graphene and manufacturing method thereof
KR1020197011215A KR102050198B1 (ko) 2014-07-22 2014-08-14 그래핀볼 전도성 접착제의 제조방법 및 상기 그래핀 볼 전도성 접착제
KR1020177004229A KR101980983B1 (ko) 2014-07-22 2014-08-14 그래핀볼 전도성 접착제의 제조방법 및 상기 그래핀 볼 전도성 접착제
US14/398,978 US9725625B2 (en) 2014-07-22 2014-08-14 Conductive adhesive with spherical graphene and manufacturing method thereof
JP2017502847A JP6369921B2 (ja) 2014-07-22 2014-08-14 導電性グラフェン球合成樹脂の製造方法及び導電性グラフェン球合成樹脂
KR1020197011216A KR102050199B1 (ko) 2014-07-22 2014-08-14 그래핀볼 전도성 접착제의 제조방법 및 상기 그래핀 볼 전도성 접착제

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410352367.X 2014-07-22
CN201410352367.XA CN104130735B (zh) 2014-07-22 2014-07-22 石墨烯球导电胶的制备方法及该石墨烯球导电胶

Publications (1)

Publication Number Publication Date
WO2016011683A1 true WO2016011683A1 (zh) 2016-01-28

Family

ID=51803598

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2014/084332 WO2016011683A1 (zh) 2014-07-22 2014-08-14 石墨烯球导电胶的制备方法及该石墨烯球导电胶

Country Status (6)

Country Link
US (2) US9725625B2 (zh)
JP (1) JP6369921B2 (zh)
KR (4) KR101980983B1 (zh)
CN (1) CN104130735B (zh)
GB (1) GB2542318B (zh)
WO (1) WO2016011683A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112457798A (zh) * 2020-11-25 2021-03-09 山东金鼎电子材料有限公司 一种高导热性低阻值石墨烯导电胶及其制备方法
CN113996254A (zh) * 2021-11-08 2022-02-01 华中科技大学 具有光耦合魔角吸收效应石墨烯包覆聚苯乙烯微球及制备

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200003258A (ko) * 2013-01-14 2020-01-08 캘리포니아 인스티튜트 오브 테크놀로지 그라펜을 형성시키는 방법 및 시스템
CN105139920B (zh) * 2015-09-25 2017-12-26 京东方科技集团股份有限公司 一种导电颗粒及其制备方法、导电胶、显示装置
CN105353555B (zh) * 2015-12-08 2018-08-14 深圳市华星光电技术有限公司 量子点彩膜基板的制作方法
CN106128562B (zh) 2016-05-31 2017-07-28 京东方科技集团股份有限公司 导电粒子及其制造方法以及导电胶及其制造方法
CN106365152A (zh) * 2016-08-31 2017-02-01 南通绿业中试技术研究院有限公司 一种石墨烯纳米片的制备方法
CN106833442B (zh) * 2017-02-24 2019-03-12 京东方科技集团股份有限公司 封框胶、液晶面板、液晶显示器及其制备方法
CN109097159A (zh) * 2018-07-11 2018-12-28 桐城市新瑞建筑工程有限公司 一种润滑纳米球及其制备方法
CN109082055A (zh) * 2018-07-11 2018-12-25 桐城市新瑞建筑工程有限公司 一种减摩石墨烯及其制备方法
CN111517307B (zh) * 2019-02-01 2022-11-22 中国科学院金属研究所 一种在非金属基底上快速cvd生长单层石墨烯的方法
US20200286732A1 (en) * 2019-03-04 2020-09-10 Samsung Electronics Co., Ltd. Method of pre-treating substrate and method of directly forming graphene using the same
KR102246955B1 (ko) 2019-05-30 2021-04-30 피씨케이(주) 개질그래핀을 이용한 고성능 고무접착제 조성물
CN110408342B (zh) * 2019-06-10 2020-12-08 江西蓝海芯科技集团有限公司 一种碳纳米球填充的双固化导电胶带的制备方法及其在电磁屏蔽胶带中的应用
CN110437781B (zh) * 2019-08-15 2021-06-22 中国工程物理研究院化工材料研究所 一种室温固化在温冲环境条件下使用的环氧灌封胶及其制备方法
CN111117433B (zh) * 2020-01-19 2021-12-07 廊坊市卓创涂料有限公司 一种石墨烯微片基耐腐蚀环氧树脂粉末涂料的制备方法
CN113621331A (zh) * 2021-07-26 2021-11-09 中国科学院金属研究所 一种利用纳米碳材料包覆微球制备异方性导电胶膜的方法及其应用

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102331642A (zh) * 2011-09-22 2012-01-25 深圳市华星光电技术有限公司 液晶显示面板及其制作方法
CN102382606A (zh) * 2011-09-19 2012-03-21 常州合润新材料科技有限公司 一种填充石墨烯各向同性高性能导电胶及其制备方法
CN102906015A (zh) * 2011-02-09 2013-01-30 创业发展联盟技术有限公司 多层石墨烯被覆基板的制造方法
US20130134361A1 (en) * 2011-11-25 2013-05-30 Samsung Electronics Co., Ltd. Graphene ball structure and method of manufacturing the same
CN103744201A (zh) * 2013-12-31 2014-04-23 深圳市华星光电技术有限公司 液晶显示面板的修复方法及修复系统

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4040990A (en) * 1975-02-18 1977-08-09 Rohm And Haas Company Partially pyrolyzed macroporous polymer particles having multimodal pore distribution with macropores ranging from 50-100,000 angstroms
JP2004300221A (ja) * 2003-03-31 2004-10-28 Toho Tenax Co Ltd 気相法炭素繊維含有プリプレグ
US7743835B2 (en) * 2007-05-31 2010-06-29 Baker Hughes Incorporated Compositions containing shape-conforming materials and nanoparticles that absorb energy to heat the compositions
GB0710425D0 (en) * 2007-06-01 2007-07-11 Hexcel Composites Ltd Improved structural adhesive materials
CN100595645C (zh) * 2007-06-08 2010-03-24 北京京东方光电科技有限公司 液晶显示器面板和导电胶、导电粒子及其制作方法
US8603620B2 (en) * 2008-07-04 2013-12-10 Hodogaya Chemical Co., Ltd. Carbon fiber and composite material
US8178201B2 (en) * 2009-03-31 2012-05-15 Korea Institute Of Science And Technology Electroconductive particle comprising graphene-coated polymer particle, anisotropic conductive film comprising same and method of making thereof
JP2011060432A (ja) * 2009-09-04 2011-03-24 Ube Industries Ltd 微細な炭素繊維で覆われた粒子
JP5632448B2 (ja) * 2010-02-19 2014-11-26 株式会社インキュベーション・アライアンス 炭素材料及びその製造方法
EP2716604B1 (en) * 2011-06-03 2018-12-26 Sekisui Chemical Co., Ltd. Composite material and method for producing same
CN102436094B (zh) * 2011-12-19 2014-08-20 深圳市华星光电技术有限公司 液晶显示装置及其制作方法
CN102544459B (zh) * 2012-01-09 2014-04-16 上海交通大学 氧化石墨烯包覆碳微球制备石墨烯包覆碳微球材料的方法
WO2013162840A1 (en) * 2012-04-26 2013-10-31 Dow Global Technologies Llc Epoxy adhesive composition
EP2879134A1 (en) * 2012-07-24 2015-06-03 Daicel Corporation Conductive fiber-coated particle, curable composition and cured article derived from curable composition
CN103805118B (zh) * 2014-02-21 2015-01-07 厦门大学 一种电子封装用复合导电胶及其制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102906015A (zh) * 2011-02-09 2013-01-30 创业发展联盟技术有限公司 多层石墨烯被覆基板的制造方法
CN102382606A (zh) * 2011-09-19 2012-03-21 常州合润新材料科技有限公司 一种填充石墨烯各向同性高性能导电胶及其制备方法
CN102331642A (zh) * 2011-09-22 2012-01-25 深圳市华星光电技术有限公司 液晶显示面板及其制作方法
US20130134361A1 (en) * 2011-11-25 2013-05-30 Samsung Electronics Co., Ltd. Graphene ball structure and method of manufacturing the same
CN103744201A (zh) * 2013-12-31 2014-04-23 深圳市华星光电技术有限公司 液晶显示面板的修复方法及修复系统

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112457798A (zh) * 2020-11-25 2021-03-09 山东金鼎电子材料有限公司 一种高导热性低阻值石墨烯导电胶及其制备方法
CN113996254A (zh) * 2021-11-08 2022-02-01 华中科技大学 具有光耦合魔角吸收效应石墨烯包覆聚苯乙烯微球及制备
CN113996254B (zh) * 2021-11-08 2022-10-28 华中科技大学 具有光耦合魔角吸收效应石墨烯包覆聚苯乙烯微球及制备

Also Published As

Publication number Publication date
JP6369921B2 (ja) 2018-08-08
GB201700828D0 (en) 2017-03-01
CN104130735B (zh) 2016-01-06
CN104130735A (zh) 2014-11-05
KR101980983B1 (ko) 2019-05-21
US9725625B2 (en) 2017-08-08
KR102050198B1 (ko) 2019-11-28
KR20190044131A (ko) 2019-04-29
US20160280968A1 (en) 2016-09-29
GB2542318B (en) 2021-08-04
KR20170032402A (ko) 2017-03-22
US20170283665A1 (en) 2017-10-05
KR102050200B1 (ko) 2019-11-28
KR102050199B1 (ko) 2019-11-28
JP2017531278A (ja) 2017-10-19
GB2542318A (en) 2017-03-15
KR20190044129A (ko) 2019-04-29
KR20190044130A (ko) 2019-04-29

Similar Documents

Publication Publication Date Title
WO2016011683A1 (zh) 石墨烯球导电胶的制备方法及该石墨烯球导电胶
CN107655598B (zh) 基于碳纳米管和银纳米线复合导电薄膜的柔性应力传感器
EP2607520B1 (en) Silver-coated spherical resin, method for producing same, anisotropically conductive adhesive containing silver-coated spherical resin, anisotropically conductive film containing silver-coated spherical resin, and conductive spacer containing silver-coated spherical resin
KR101219613B1 (ko) 금속-탄소 하이브리드형 나노복합체 필름 및 그 제조 방법
CN101812183B (zh) 含无机纳米粉体的聚酰亚胺多层复合膜的制备方法
CN102592749B (zh) 表面自组装石墨烯/聚酰亚胺透明导电薄膜的方法
WO2014176831A1 (zh) 导电封框胶、显示面板及其制作方法、显示装置
CN105139920A (zh) 一种导电颗粒及其制备方法、导电胶、显示装置
CN108511133B (zh) 一种免转印、高黏结性金属网格透明电极的制备方法
CN102491741A (zh) 一种ito陶瓷靶制备方法
CN102863913B (zh) 一种新型透明导电胶膜及其制备方法
GB2505035A (en) Isotropic conductive adhesive
CN106219531A (zh) 一种石墨/纳米碳管阵列复合导热膜的制备方法
CN116705421A (zh) 一种银复合导电颗粒及其制备方法与应用
CN106219532A (zh) 一种纳米碳管阵列/石墨复合导热膜及其制备方法
CN110845282B (zh) 一种定向修补结构缺陷的导热填料、制备方法及复合含能材料
CN113621331A (zh) 一种利用纳米碳材料包覆微球制备异方性导电胶膜的方法及其应用
CN111171772A (zh) 一种环氧导电胶的制备方法
CN110819170A (zh) 一种石墨烯导电油墨的制备方法
TW201003499A (en) Method for making liquid crystal display with touch panel
CN108899109B (zh) 石墨烯导电溶液、制造方法及石墨烯导电层和导电基板
CN108806835A (zh) 一种导电薄膜涂层的制备方法
TWI362429B (en) Method of making high-density carbon nanotube array composite material
Li et al. Synthesis and characterization of silica-silver core-shell structural spheres and its application in conductive adhesive
CN107286876A (zh) 一种高组分的炭系材料的导电压敏胶及其制备方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 14398978

Country of ref document: US

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14898015

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2017502847

Country of ref document: JP

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 201700828

Country of ref document: GB

Kind code of ref document: A

Free format text: PCT FILING DATE = 20140814

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 20177004229

Country of ref document: KR

Kind code of ref document: A

122 Ep: pct application non-entry in european phase

Ref document number: 14898015

Country of ref document: EP

Kind code of ref document: A1