WO2016008189A1 - 具有自我补偿功能的栅极驱动电路 - Google Patents

具有自我补偿功能的栅极驱动电路 Download PDF

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Publication number
WO2016008189A1
WO2016008189A1 PCT/CN2014/084339 CN2014084339W WO2016008189A1 WO 2016008189 A1 WO2016008189 A1 WO 2016008189A1 CN 2014084339 W CN2014084339 W CN 2014084339W WO 2016008189 A1 WO2016008189 A1 WO 2016008189A1
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Prior art keywords
electrically connected
gate
thin film
film transistor
pull
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PCT/CN2014/084339
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English (en)
French (fr)
Inventor
戴超
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/398,452 priority Critical patent/US9524688B2/en
Priority to KR1020177003660A priority patent/KR101879145B1/ko
Priority to JP2017502217A priority patent/JP6321280B2/ja
Priority to GB1700516.6A priority patent/GB2543210B/en
Publication of WO2016008189A1 publication Critical patent/WO2016008189A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611Control of matrices with row and column drivers
    • G09G3/3674Details of drivers for scan electrodes
    • G09G3/3677Details of drivers for scan electrodes suitable for active matrices only
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611Control of matrices with row and column drivers
    • G09G3/3648Control of matrices with row and column drivers using an active matrix
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611Control of matrices with row and column drivers
    • G09G3/3696Generation of voltages supplied to electrode drivers
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2230/00Details of flat display driving waveforms
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/04Structural and physical details of display devices
    • G09G2300/0404Matrix technologies
    • G09G2300/0408Integration of the drivers onto the display substrate
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/04Structural and physical details of display devices
    • G09G2300/0421Structural details of the set of electrodes
    • G09G2300/0426Layout of electrodes and connections
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00Command of the display device
    • G09G2310/02Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264Details of driving circuits
    • G09G2310/0286Details of a shift registers arranged for use in a driving circuit
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00Command of the display device
    • G09G2310/02Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264Details of driving circuits
    • G09G2310/0289Details of voltage level shifters arranged for use in a driving circuit
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00Command of the display device
    • G09G2310/08Details of timing specific for flat panels, other than clock recovery
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00Control of display operating conditions
    • G09G2320/02Improving the quality of display appearance
    • G09G2320/0209Crosstalk reduction, i.e. to reduce direct or indirect influences of signals directed to a certain pixel of the displayed image on other pixels of said image, inclusive of influences affecting pixels in different frames or fields or sub-images which constitute a same image, e.g. left and right images of a stereoscopic display
    • G09G2320/0214Crosstalk reduction, i.e. to reduce direct or indirect influences of signals directed to a certain pixel of the displayed image on other pixels of said image, inclusive of influences affecting pixels in different frames or fields or sub-images which constitute a same image, e.g. left and right images of a stereoscopic display with crosstalk due to leakage current of pixel switch in active matrix panels
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02Details of power systems and of start or stop of display operation
    • G09G2330/021Power management, e.g. power saving

Definitions

  • the present invention relates to the field of liquid crystal technology, and in particular, to a gate driving circuit with self-compensation function. Background technique
  • the GOA Gate Driver on Array
  • TFT Thin Film Transistor
  • the functions of the GOA circuit mainly include: charging the capacitor in the shift register unit by using a high level signal outputted by the gate line of the previous row, so that the gate line of the current line outputs a high level signal, and then using the high output of the next line of the gate line output.
  • the flat signal is reset.
  • FIG. 1 is a schematic diagram of a gate drive circuit structure that is currently used.
  • the method includes: cascading a plurality of GOA units, and controlling, according to the Nth stage GOA unit, charging the Nth horizontal scanning line G(N) of the display area, where the Nth stage GOA unit includes a pull-up control module ⁇ and a pull-up module 2 ′
  • the pull-up module 2', the first pull-down module 4', the bootstrap capacitor module 5', and the pull-down maintaining circuit 6' are respectively connected to the N-th gate signal point Q(N) and the N-th horizontal scanning line G (N) electrical connection, the pull-up control module ⁇ and the downlink module 3 ′ are respectively electrically connected to the Nth-level gate signal point Q(N), and the pull-down maintaining module 6 ′ inputs a DC low voltage VSS .
  • the pull-up control module ⁇ includes a first thin film transistor ⁇ whose gate input is a downlink signal ST(N-1) from the N-1th GOA unit, and the drain is electrically connected to the N-1th horizontal scan. a line G(N1), the source is electrically connected to the Nth-level gate signal point Q(N); the pull-up module 2' includes a second thin film transistor T2', and a gate thereof is electrically connected to the second stage a gate signal point Q(N;), a drain input first high frequency clock signal CK or a second high frequency clock signal XCK, and a source electrically connected to the Nth horizontal scanning line G(N);
  • the module 3 includes a third thin film transistor T3 having a gate electrically connected to the second gate signal point Q(N;), and a drain inputting the first high frequency clock signal CK or the second high frequency clock signal XCK.
  • the source outputs an Nth stage downlink signal ST(N);
  • the first pulldown module 4' includes a fourth thin film transistor T4' whose gate is electrically connected to the N+1th horizontal scanning line G(N+1), and the drain is electrically connected to the Nth horizontal scanning line G(N), the source Input DC low voltage VSS;
  • fifth thin film transistor T5' whose gate is electrically connected to the N+1th horizontal scanning line G(N+1), and the drain is electrically connected to the Nth level gate signal point Q ( N), the source input DC low voltage VSS;
  • the bootstrap capacitor module 5 includes a bootstrap capacitor Cb, and the pull-down maintaining module 6 includes: a sixth thin film transistor T6' whose gate is electrically connected first The circuit point ⁇ ( ⁇ )', the drain is electrically connected to the third horizontal scanning line G(N), the source input DC low voltage VSS, and the seventh thin film transistor T7, whose gate is electrically connected to the first circuit point ⁇ ( ⁇ )', the drain is electrically connected to the
  • the source is electrically connected to the first circuit point ⁇ ( ⁇ )'; the eleventh thin film transistor ⁇ 1 ⁇ , the gate thereof inputs the second low frequency clock signal LC2, the drain input the first low frequency clock signal LC1, and the source is electrically connected a circuit point ⁇ ( ⁇ )'; a twelfth thin film transistor ⁇ 12', a gate inputting a second low frequency clock signal LC2, a drain inputting a second low frequency clock signal LC2, and a source electrically connected to the second circuit point ⁇ ( ⁇
  • the thirteenth thin film transistor ⁇ 13' has a gate inputting a first low frequency clock signal LC1, a drain inputting a second low frequency clock signal LC2, and a source electrically connected to the second circuit point ⁇ ( ⁇ );
  • the thin film transistor ⁇ 14, the gate thereof is electrically connected to the second gate signal point Q(N), the drain is electrically connected to the first circuit point P(N)', and the source input DC low voltage VSS;
  • the pull-down maintaining module 6' is in a long working state, that is, the first circuit point p ⁇ ; Ny and the second circuit point KN)' will be in a positive high state for a long time, so that
  • the most severe components in the circuit that are subjected to voltage stress (Stress) are thin film transistors T6, ⁇ 7, ⁇ 8, ⁇ 9.
  • the threshold voltage Vth of the thin film transistors ⁇ 6, ⁇ 7, ⁇ 8, ⁇ 9 gradually increases, and the on-state current gradually decreases, which results in the Nth horizontal scanning line G.
  • the (N) and N-th gate signal points Q(N) are not well maintained at a stable low potential, which is the most important factor affecting the reliability of the gate drive circuit.
  • the pull-down sustain module is essential It can usually be designed as a set of pull-down maintenance modules, or as two sets of alternate pull-down maintenance modules.
  • the main purpose of designing the two sets of pull-down maintenance modules is to reduce the thin film transistors T6', T7', T8', T9' controlled by the first circuit point ⁇ ( ⁇ )' and the second circuit point ⁇ ( ⁇ )' in the pull-down maintenance module.
  • Subject to voltage stress However, the actual measurement found that even if designed as two sets of pull-down sustaining modules, thin film transistors ⁇ 6, ⁇ 7, ⁇ 8, ⁇ 9, these four thin film transistors are still the most severe part of the entire gate drive circuit. That is to say, the threshold voltage (Vth) of the thin film transistor drifts the most.
  • FIG. 2a is a schematic diagram showing the relationship between the logarithm of the overall current logarithm of the thin film transistor and the voltage curve before and after the threshold voltage drift, wherein the solid line is the relationship between the current logarithm and the voltage without threshold voltage drift, and the dashed line is the current after the threshold voltage drift.
  • Logarithm versus voltage curve As can be seen from Fig. 2a, under the same gate-to-source voltage Vgs, the current logarithm of the threshold voltage drift (Ids) is greater than the logarithm of the current after the threshold voltage drift.
  • Figure 2b is a schematic diagram showing the relationship between the overall current and voltage curves of the thin film transistor before and after the threshold voltage drift.
  • the gate voltage Vgl where the threshold voltage drift does not occur is smaller than the gate voltage Vg2 after the threshold voltage drift, that is, after the threshold voltage drift, it is desirable to achieve the same drain-source current. Ids, which requires a larger gate voltage.
  • the forward drift of the threshold voltage Vth causes the on-state current Ion of the thin film transistor to gradually decrease.
  • the threshold voltage Vth increases, the on-state current Ion of the thin film transistor continues to decrease.
  • the stability of the potential of the Nth-level gate signal point Q(N) and the N-th horizontal scanning line G(N) cannot be well maintained, which may cause an abnormality in the liquid crystal display screen display.
  • the most easily failing component in the gate driving circuit is the thin film transistors T6', ⁇ 7', ⁇ 8', and ⁇ 9' of the pull-down sustaining module. Therefore, in order to improve the reliability of the gate driving circuit and the liquid crystal display panel, it is necessary to improve the reliability of the gate driving circuit and the liquid crystal display panel. solve this problem.
  • the design method is to increase the size of the four thin film transistors. However, increasing the size of the thin film transistor also increases the off-state leakage current of the thin film transistor, and the problem cannot be solved. Summary of the invention
  • the object of the present invention is to provide a gate driving circuit with self-compensation function, which improves the reliability of the gate driving circuit for a long time by the pull-down maintaining module with self-compensation function, and reduces the threshold voltage drift to operate the gate driving circuit. Impact.
  • the present invention provides a gate driving circuit having a self-compensation function, comprising: a plurality of cascaded GOA units, and controlling a horizontal scanning line G(N) of a display area according to a level GOA unit Charging
  • the Nth stage GOA unit includes: a pull-up control module, a pull-up a module, a downlink module, a first pull-down module, a bootstrap capacitor module, and a pull-down maintenance module; the pull-up module, the first pull-down module, the bootstrap capacitor module, and the pull-down sustain circuit respectively and the Nth-level gate signal
  • the point Q(N) is electrically connected to the Nth horizontal scanning line G(N), and the pull-up control module and the downlink module are electrically connected to the Nth-level gate signal point Q(N), respectively.
  • the pull-down maintenance module inputs a DC low voltage VSS;
  • the pull-down maintaining module is configured by alternately working with the first pull-down maintaining module and the second pull-down maintaining module;
  • the first pull-down maintaining module includes: a first thin film transistor T1 having a gate electrically connected to the first circuit point ⁇ , and a drain electrically connected to the third horizontal scanning line G(N), the source input DC low voltage VSS; second thin film transistor T2, its gate is electrically connected to the first circuit point ⁇ ( ⁇ ), the drain is electrically connected to the second gate signal point Q(N), and the source input DC low voltage VSS
  • the third thin film transistor T3 has a gate electrically connected to the first low frequency clock signal LCI or the first high frequency clock signal CK, and a drain electrically connected to the first low frequency clock signal LC1 or the first high frequency clock signal CK, the source Electrically connecting the second circuit point S(N); the fourth thin film transistor T4, the gate of which is electrically connected to the second-order gate signal point QN;), the drain is electrically connected to the second circuit point S(N;),
  • the second low frequency clock signal LC2 or the second high frequency clock signal XCK is electrically connected to the first low frequency clock signal LC1 or the first high frequency clock signal CK, and the source is electrically connected to the second circuit point S(N); a capacitor Cstl, the upper plate is electrically connected to the second circuit point S (N), the lower plate is electrically connected to the first circuit point PN);
  • the second pull-down maintaining module includes: an eighth thin film transistor T8 whose gate is electrically connected to the third circuit point ⁇ ( ⁇ ), and the drain is electrically connected to the third-order horizontal scanning line G(N), and the source input DC Low voltage VSS; ninth thin film transistor T9, its gate is electrically connected to the third circuit point ⁇ ( ⁇ ), the drain is electrically connected to the second-order gate signal point Q(N), and the source input DC low voltage VSS;
  • the tenth thin film transistor T10 has a gate electrically connected to the second low frequency clock signal LC2 or the second high frequency clock signal XCK, and a drain electrically connected to the second low frequency clock signal LC2 or the second high frequency clock signal XCK, the source is electrically
  • the fourth circuit point T(N) is connected to the eleventh thin film transistor T11, the gate of the eleventh thin film transistor T11 is electrically connected to the second gate signal point Q(N), and the drain is electrically connected to the fourth circuit point T(N).
  • the source input DC low voltage VSS; the twelfth thin film transistor T12 has a gate electrically connected to the N-1th gate signal point (3 ⁇ 4 ⁇ -1), and the drain is electrically connected to the third circuit point K(N),
  • the source is electrically connected to the Nth gate signal point Q(N);
  • the fourth thin film transistor T14 is electrically connected to the first low frequency clock signal LCI or the first high frequency clock signal CK, the drain is electrically connected to the second low frequency clock signal LC2 or the second high frequency clock signal XCK, the source is electrically connected to the fourth circuit point T(N); the second capacitor Cst2, the upper plate is electrically connected to the fourth Circuit point T(N), the lower plate is electrically connected to the third circuit point K(N;).
  • the pull-up control module includes a fifteenth thin film transistor T15 whose gate input is a down signal ST(N-1) from the N-1th GOA unit, and the drain is electrically connected to the N-1th horizontal scan.
  • a line G(N1) the source is electrically connected to the Nth gate signal point Q(N);
  • the pull-up module includes a 16th thin film transistor T16, and a gate thereof is electrically connected to the second gate a signal point Q(N), a drain input first high frequency clock signal CK or a second high frequency clock signal XCK, the source is electrically connected to the Nth horizontal scanning line G(N);
  • the seventeen thin film transistor T17 has a gate electrically connected to the second gate signal point Q(N;), a drain input first high frequency clock signal CK or a second high frequency clock signal XCK, and a source output Nth Level down signal ST(N);
  • the first pull-down module includes an eighteenth thin film transistor T18 whose gate is electrically connected to the ⁇ +
  • the gate of the fifth thin film transistor T5 is electrically connected to the circuit enable signal STV; the gate of the twelfth thin film transistor T12 is electrically connected to the circuit enable signal STV; The gate and the drain of the fifteen thin film transistor T15 are electrically connected to the circuit enable signal STV.
  • the gate of the sixth thin film transistor T6 is electrically connected to the circuit enable signal STV; the gate of the thirteenth thin film transistor T13 is electrically connected to the circuit enable signal STV; The gate of the eighteenth thin film transistor T18 is electrically connected to the second-level horizontal scanning line G(2); the gate of the nineteenth thin film transistor T19 is electrically connected to the second-level horizontal scanning line G(2).
  • the first pull-down maintaining module further includes: a third capacitor Cst3, an upper plate electrically connected to the first circuit point PN;), a lower plate input DC low voltage VSS; the first pull-down maintaining module and the first The circuit structure of the two pull-down maintenance modules is the same.
  • the first pull-down maintaining module further includes: a twentieth thin film transistor T20, the gate of which is electrically connected to the N+1th horizontal scanning line G(N+1), and the drain is electrically connected to the second circuit point S ( N), the source input DC low voltage VSS; the first pull-down maintaining module has the same circuit structure as the second pull-down maintaining module.
  • the first pull-down maintaining module further includes: a third capacitor Cst3, the upper plate is electrically connected to the first circuit point P(N), the lower plate is input with a DC low voltage VSS; and the twentieth thin film transistor T20 is gated Electrode is electrically connected to the N+1th horizontal scanning line G(N+1), the drain is electrically connected to the second circuit point S(N), and the source input DC low voltage VSS; the first pull-down maintaining module and The circuit structure of the second pull-down maintenance module is the same.
  • the first high frequency clock signal CK and the second high frequency clock signal XCK are two high frequency clock signal sources whose phases are completely opposite; the first low frequency clock signal LC1 and the second low frequency clock signal LC2 are two phases completely The opposite source of low frequency signals.
  • the gate of the eighteenth thin film transistor T18 and the gate of the nineteenth thin film transistor T19 in the first pull-down module are electrically connected to the N+2 horizontal scanning line G(N+2), mainly for realizing the first
  • the N-level gate signal point Q(N) potential is in three stages. The first stage is to rise to a high level for a period of time, and the second stage is raised to a high level and maintained for a period of time on the basis of the first stage. The third phase falls to the high level that is substantially equal to the first phase on the basis of the second phase, and then uses the third phase of the three phases to perform self-compensation of the threshold voltage.
  • the potential of the Nth gate signal point Q(N) is in three stages, wherein the change of the third stage is mainly affected by the sixth thin film transistor T6 or the thirteenth transistor (T13).
  • the present invention provides a gate driving circuit having a self-compensation function, which utilizes a bootstrap action of a capacitor to control a first circuit point P(N) or a third circuit point K(N) of a pull-down maintaining module Designing a function capable of detecting a threshold voltage of the thin film transistor, and storing the threshold voltage at the first circuit point P(N) or the third circuit point K(N), thereby implementing the first circuit point P(N) or the third circuit
  • the control voltage of the point K(N) varies as the threshold voltage of the thin film transistor drifts.
  • the invention improves the reliability of the long-term operation of the gate driving circuit by designing the pull-down maintaining module with self-compensation function, and reduces the influence of the threshold voltage drift on the operation of the gate driving circuit.
  • FIG. 1 is a schematic diagram of a gate drive circuit structure currently used
  • 2a is a schematic diagram showing changes in the relationship between the logarithm of the overall current of the thin film transistor and the voltage curve before and after the threshold voltage drift
  • 2b is a schematic diagram showing changes in the relationship between the overall current and voltage curves of the thin film transistor before and after the threshold voltage drift
  • FIG. 3 is a schematic diagram of a single-stage architecture of a gate driving circuit with self-compensation function according to the present invention
  • FIG. 4 is a schematic diagram of a first-level connection relationship of a single-stage architecture of a gate driving circuit with self-compensation function according to the present invention
  • FIG. 5 is a schematic diagram showing the connection relationship of the last stage of the single-stage architecture of the gate driving circuit with self-compensation function according to the present invention.
  • FIG. 6 is a circuit diagram of a first embodiment of the first pull-down maintaining module employed in FIG. 3;
  • FIG. 7a is a timing diagram of the gate driving circuit shown in FIG. 3 before the threshold voltage drift;
  • Figure 7b is a timing diagram of the gate driving circuit shown in Figure 3 after the threshold voltage drift
  • FIG. 8 is a circuit diagram of a second embodiment of the first pull-down maintaining module employed in FIG. 3.
  • FIG. 9 is a circuit diagram of a third embodiment of the first pull-down maintaining module employed in FIG. 3.
  • FIG. The circuit diagram of the fourth embodiment of the first pull-down maintaining module. detailed description
  • FIG. 3 is a schematic diagram of a single-stage architecture of a gate driving circuit with self-compensation function according to the present invention.
  • the method includes: cascading a plurality of GOA units, and charging the display area Nth horizontal scanning line G(N) according to the Nth stage GOA unit control, the Nth stage GOA unit includes: a pull-up control module 1 and a pull-up module 2
  • the pull-down maintaining module 6 is configured by alternately working with the first pull-down maintaining module 61 and the second pull-down maintaining module 62;
  • the first pull-down maintaining module 61 includes: a first thin film transistor T1 having a gate electrically connected to the first circuit point ⁇ , and a drain electrically connected to the third horizontal scanning line G(N), the source Input DC low voltage VSS; second thin film transistor T2, its gate is electrically connected to the first circuit point ⁇ ( ⁇ ), the drain is electrically connected to the second-order gate signal point Q(N), and the source input DC low voltage VSS; a third thin film transistor T3 whose gate is electrically connected to the first low frequency clock signal LC1 or the first high frequency clock signal CK, and the drain is electrically connected to the first low frequency clock signal LC1 or the first high frequency clock signal CK, the source
  • the second circuit point S(N) is electrically connected to the second circuit transistor T4, and the gate is electrically connected to the second-stage gate signal Point Q (N), the drain is electrically connected to the second circuit point S (N), the source input DC low voltage VSS;
  • the fifth thin film transistor T5 the gate of which is electrical
  • the second low frequency clock signal LC2 or the second high frequency clock signal XCK is electrically connected to the first low frequency clock signal LC1 or the first high frequency clock signal CK, and the source is electrically connected to the second circuit point S(N);
  • Capacitor Cstl the upper plate is electrically connected to the second circuit point S (N), and the lower plate is electrically connected to the first circuit point PN);
  • the second pull-down maintaining module 62 includes: an eighth thin film transistor T8 whose gate is electrically connected to the third circuit point ⁇ , and the drain is electrically connected to the third horizontal scanning line G(N), the source input DC low voltage VSS; ninth thin film transistor T9, its gate is electrically connected to the third circuit point ⁇ ( ⁇ ), the drain is electrically connected to the second gate signal point Q(N), and the source input DC low voltage VSS.
  • the tenth thin film transistor T10 has a gate electrically connected to the second low frequency clock signal LC2 or the second high frequency clock signal XCK, and a drain electrically connected to the second low frequency clock signal LC2 or the second high frequency clock signal XCK, the source Electrically connecting the fourth circuit point T(N);
  • the eleventh thin film transistor T11 has a gate electrically connected to the second gate signal point Q(N), and the drain is electrically connected to the fourth circuit point T(N) , the source input DC low voltage VSS;
  • the pull-up control module 1 includes a fifteenth thin film transistor T15 whose gate is input with a down signal ST(N-1) from the N-1th stage GOA unit, and the drain is electrically connected to the N-1th level.
  • a scan line G(N-1) the source is electrically connected to the Nth-level gate signal point Q(N);
  • the pull-up module 2 includes a sixteenth thin film transistor T16, and the gate is electrically connected to the first a step gate signal point Q(N), a drain input first high frequency clock signal CK or a second high frequency clock signal XCK, and a source electrically connected to the Nth horizontal scan line GN);
  • 3 includes a seventeenth thin film transistor T17 having a gate electrically connected to the second gate signal point Q(N;), a drain inputting the first high frequency clock signal CK or a second high frequency clock signal XCK, and a source Outputting an Nth stage downlink signal ST(N);
  • the first pull-down module 4 includes an eighteenth thin
  • the purpose of this is to make the Nth gate signal point.
  • the Q(N) potential is in three stages. The first stage is to rise to a high level and maintain for a period of time. The second stage rises to a high level on the basis of the first stage and maintains for a period of time. The third stage is in the second stage. On the basis of the phase, it drops to a high potential which is substantially equal to the first phase, and then uses the third phase of the three phases to perform self-compensation of the threshold voltage; the bootstrap capacitor module 5 includes a bootstrap capacitor Cb.
  • the number of stages between the multi-level horizontal scanning lines is cyclic, that is, when N in the Nth horizontal scanning line G(N) is the last level Last, the N+2 horizontal scanning line G (N+ 2) represents the second level horizontal scanning line G(2); when N in the Nth horizontal scanning line G(N) is the penultimate level Last-1, the N+2th horizontal scanning line G(N+ 2) represents the first level horizontal scanning line G(l), and so on.
  • FIG. 4 is a schematic diagram showing the first-level connection relationship of the single-stage architecture of the gate driving circuit with self-compensation function, that is, the connection relationship of the gate driving circuit when N is 1.
  • the gate of the fifth thin film transistor T5 is electrically connected to the circuit enable signal STV;
  • the gate of the twelfth thin film transistor T12 is electrically connected to the circuit enable signal STV;
  • the gate and the drain of the fifteenth thin film transistor T15 are both Electrically connected to the circuit enable signal STV.
  • FIG. 5 is a schematic diagram showing the connection relationship of the last stage of the single-stage architecture of the gate driving circuit with self-compensation function, that is, the connection relationship of the gate driving circuit when N is the last stage Last.
  • the gate of the sixth thin film transistor T6 is electrically connected to the circuit enable signal STV; the gate of the thirteenth thin film transistor T13 is electrically connected to the circuit enable signal STV; the gate of the eighteenth thin film transistor T18 is electrically connected to The second level horizontal scanning line G(2); the gate of the nineteenth thin film transistor T19 is electrically connected to the second level horizontal scanning line G(2).
  • FIG. 6 is a circuit diagram of the first embodiment of the first pull-down maintaining module employed in FIG.
  • the method includes: a first thin film transistor T1 having a gate electrically connected to the first circuit point ⁇ ( ⁇ :), a drain electrically connected to the third-order horizontal scanning line G(N), and a source input DC low voltage VSS;
  • the thin film transistor T2 has a gate electrically connected to the first circuit point P(N), a drain electrically connected to the Nth stage gate signal point Q(N), a source input DC low voltage VSS, and a third thin film transistor T3.
  • the gate is electrically connected to the first low frequency clock signal LC1 or the first high frequency clock signal CK
  • the drain is electrically connected to the first low frequency clock signal LC1 or the first high frequency clock signal CK
  • the source is electrically connected to the second circuit point.
  • fourth thin film transistor ⁇ 4 the gate of which is electrically connected to the second-order gate signal point Q(N), the drain is electrically connected to the second circuit point S(N), and the source input DC low voltage VSS
  • Four thin film transistors T4 are mainly During the action period, the second circuit point s(N) is pulled down, so that the purpose of controlling the potential of the first circuit point P(N) through the second circuit point S(N) can be realized; the fifth thin film transistor T5, whose gate is electrically The N-1th gate signal point Q(N-1) is connected, the drain is electrically connected to the first circuit point P(N), the source input DC low voltage VSS, and the fifth thin film transistor T5 is It is ensured that during the action of the output of the Nth horizontal scanning line G(N) and the Nth stage gate signal point Q(N), the first circuit point P(N) is in a low potential closed state, thereby ensuring the Nth level.
  • the scan line G(N) and the Nth gate signal point Q(N) can be output normally; the sixth thin film transistor T6 whose gate is electrically connected to the N+1th horizontal scan line G(N+1), leak The first circuit point P(N) is electrically connected, and the source is electrically connected to the Nth gate signal point Q(N).
  • the purpose of the design is to utilize three of the Nth gate signal points Q(N).
  • the potential of the third stage in the stage is detected by the threshold voltage, and the potential is stored at the first circuit point P(N); the seventh thin film transistor T7 is electrically connected to the second low frequency clock signal LC2 or Second high frequency
  • the clock signal XCK the drain is electrically connected to the first low frequency clock signal LC1 or the first high frequency clock signal CK, the source is electrically connected to the second circuit point S(N); the first capacitor Cstl, the upper plate is electrically connected The second circuit point SN;), the lower plate is electrically connected to the first circuit point PN;).
  • the first pull-down maintaining module has the same circuit structure as the second pull-down maintaining module.
  • FIG. 7a is a timing diagram of the gate driving circuit shown in FIG. 3 before the threshold voltage drift
  • FIG. 7b is a timing chart of the gate driving circuit shown in FIG. 3 after the threshold voltage drift.
  • the STV signal is a circuit enable signal
  • the first high frequency clock signal CK and the second high frequency clock signal XCK are a set of high frequency clock control signals having completely opposite phases
  • the two low frequency clock signal LC2 is a low frequency signal source with two opposite phases
  • G(Nl) is the N-1th horizontal scanning line, that is, the scanning output signal of the previous stage
  • ST(N-1) is the N-1th.
  • the level down signal that is, the downlink signal of the previous stage, Q N-1) is the gate signal point of the N-1th stage, that is, the gate signal point of the previous stage, and Q(N) is the Nth stage gate Signal point, which is the gate signal point of this stage.
  • FIG. 7a, 7b are timing diagrams in which the first low frequency clock signal LCI is in an active state, that is, a timing chart in which the first pull-down maintaining module 61 is in an operating state.
  • the potential of the Nth gate signal point Q(N) is in three stages, the first stage is to rise to a high level and maintain for a period of time, and the second stage is raised by a high level on the basis of the first stage. And for a period of time, the third stage is lowered to the high level which is substantially equal to the first stage on the basis of the second stage, wherein the change of the third stage is mainly affected by the sixth thin film transistor T6.
  • the operation of the gate driving circuit shown in FIG. 3 is as follows: When the N+1th horizontal scanning line G N+l) is turned on, the sixth thin film transistor T6 is turned on, and the Nth stage gate is turned on.
  • the signal point Q(N) is the same as the potential of the first circuit point P(N), the second thin film transistor T2 is equivalent to the diode connection, and the first circuit point P(N) is at the Nth stage gate signal point Q.
  • the value of the threshold voltage of the first thin film transistor T1 and the second thin film transistor T2 may be stored by the sixth thin film transistor T6, and then, with the drift of the threshold voltage Vth, the Nth gate signal point
  • the potential rise of the third stage of Q(N), the potential value of the threshold voltage stored at the first circuit point PN) is also raised, and then the second circuit point S(N) is raised by the first capacitor Cstl to raise the first circuit. Point P(N) so that the change in threshold voltage can be compensated.
  • the potential of the Nth gate signal point Q(N) and the first circuit point P(N) also changes significantly, especially the first circuit point P(N).
  • the increase of the potential can effectively reduce the influence of the threshold voltage drift on the on-state currents of the first thin film transistor T1 and the second thin film transistor T2, thereby ensuring the Nth horizontal scanning line G(N) and the Nth gate signal point Q(N) is still well maintained at a low potential after long-term operation.
  • the second pull-down maintaining module 62 operates, and the N-th gate signal point Q(N) is in three stages, and the first stage is raised to a high potential and maintained for a period of time, the second phase rises again at a high potential for a period of time on the basis of the first phase, and the third phase falls to a high level substantially equal to the first phase on the basis of the second phase,
  • the third phase of the change is mainly affected by the thirteenth thin film transistor T13.
  • the third phase is lower before the threshold voltage drift, and the threshold voltage is shifted after the rise, so that the eighth thin film transistor can be detected by using the portion.
  • the operation process of the gate driving circuit shown in FIG. 3 is: when the N+1th horizontal scanning line G N+l) is turned on, the thirteenth thin film transistor T13 is turned on, and the Nth stage gate signal point Q is at this time.
  • (N) is the same as the potential of the third circuit point K(N)
  • the ninth thin film transistor T9 is equivalent to the diode connection
  • the third circuit point K(N) is at the Nth gate signal point Q(N)
  • the value of the threshold voltage of the eighth thin film transistor T8 and the ninth transistor T9 can be stored through the thirteenth thin film transistor T13.
  • the Nth gate signal point Q (N) The potential rise of the third stage, the potential value of the threshold voltage stored at the third circuit point KN) is also raised, and then the fourth circuit point T(N) is raised by the second capacitor Cst2 to raise the third circuit point K ( N), this can compensate for the change of the threshold voltage, thereby ensuring that the Nth horizontal scanning line G(N) and the Nth stage gate signal point Q(N) can be well maintained after a long period of time. Potential state.
  • the first low frequency clock signal LC1 and the second low frequency clock signal LC2 are alternately operated, that is, the first pull-down maintaining module 61 and the second pull-down maintaining mode shown in FIG.
  • Block 62 operates alternately, which reduces the operating time of each module, reduces the voltage stress applied, and improves the overall reliability of the circuit.
  • FIG. 8 is a circuit diagram of a second embodiment of the first pull-down maintaining module used in FIG. Figure 8 is a third capacitor Cst3 added to the base of Figure 6, the upper plate is electrically connected to the first circuit point P (N;), the lower plate input DC low voltage VSS, the main function of the third capacitor Cst3 is Store the threshold voltage.
  • the first pull-down maintaining module has the same circuit structure as the second pull-down maintaining module. Since the first thin film transistor T1 and the second thin film transistor T2 have a certain parasitic capacitance, they can function as the third capacitor Cst3. Therefore, the third capacitor Cst3 can be removed in the actual circuit design.
  • FIG. 9 is a circuit diagram of a third embodiment of the first pull-down maintaining module employed in FIG. FIG. 9 is a twentieth thin film transistor T20, the gate of which is electrically connected to the N+1th horizontal scanning line G(N+1), and the drain is electrically connected to the second circuit point S (FIG. 9). N), the source input DC low voltage VSS; the first pull-down maintaining module has the same circuit structure as the second pull-down maintaining module.
  • the main purpose of the twentieth thin film transistor T20 is to compensate for the fact that the potential of the first stage of the Nth gate signal point Q(N) is not high, and the potential pulldown during the second circuit point S(N) is not sufficiently low.
  • FIG. 10 is a circuit diagram of a fourth embodiment of the first pull-down maintaining module employed in FIG. 10 is added on the basis of FIG. 6: a third capacitor Cst3, the upper plate is electrically connected to the first circuit point P(N), the lower plate is input with a DC low voltage VSS, and the twentieth thin film transistor T20 is gated.
  • the pole is electrically connected to the N+1th horizontal scanning line G(N+1), the drain is electrically connected to the second circuit point SN;), and the source input DC low voltage VSS.
  • the first pull-down maintaining module has the same circuit structure as the second pull-down maintaining module.
  • the first pull-down maintaining module 61 and the second pull-down maintaining module 62 have the same circuit structure, and the replaced
  • the timing chart of the gate driving circuit is the same as that of FIGS. 7a and 7b, and its operation process is the same as that of the gate driving circuit shown in FIG. 3, and therefore will not be described again.
  • the present invention provides a gate drive circuit with self-compensation function.
  • the bootstrap action of the capacitor is utilized.
  • the invention improves the long-term operation of the gate driving circuit by designing a pull-down maintaining module with self-compensation function Reliability, reducing the effect of threshold voltage drift on the operation of the gate drive circuit.

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Abstract

一种具有自我补偿功能的栅极驱动电路,包括:级联的多个GOA单元,该第N级GOA单元包括:上拉控制模块(1)、上拉模块(2)、下传模块(3)、第一下拉模块(4)、自举电容模块(5)、及下拉维持模块(6);该上拉模块(2)、第一下拉模块(4)、自举电容模块(5)、下拉维持模块(6)分别与第N级栅极信号点Q(N)和该第N级水平扫描线G(N)电性连接,该上拉控制模块(1)与下传模块(3)分别与该第N级栅极信号点Q(N)电性连接,该下拉维持模块(6)输入直流低电压VSS;该下拉维持模块(6)采用第一下拉维持模块(61)与第二下拉维持模块(62)交替工作构成。通过设计具有自我补偿功能的下拉维持模块(6)来提高栅极驱动电路长期操作的可靠性,降低阈值电压漂移对栅极驱动电路运作的影响。

Description

具有自我补偿功能的栅极驱动电路 技术领域
本发明涉及液晶技术领域, 尤其涉及一种具有自我补偿功能的栅极驱 动电路。 背景技术
GOA (Gate Driver on Array, 阵列基板行驱动) 技术是将作为栅极开关 电路的 TFT (Thin Film Transistor, 薄膜场效应晶体管) 集成于阵列基板上, 从而省掉原先设置在阵列基板外的栅极驱动集成电路部分, 从材料成本和 工艺步骤两个方面来降低产品的成本。 GOA 技术是目前 TFT-LCD (Thin Film Transistor-Liquid Crystal Display, 薄膜场效应晶体管液晶显示器) 技术 领域常用的一种栅极驱动电路技术, 其制作工艺简单, 具有良好的应用前 景。 GOA电路的功能主要包括: 利用上一行栅线输出的高电平信号对移位 寄存器单元中的电容充电, 以使本行栅线输出高电平信号, 再利用下一行 栅线输出的高电平信号实现复位。
请参阅图 1, 图 1为目前常采用的栅极驱动电路架构示意图。 包括: 级 联的多个 GOA单元,按照第 N级 GOA单元控制对显示区域第 N级水平扫 描线 G(N)充电, 该第 N级 GOA单元包括上拉控制模块 Γ、 上拉模块 2'、 下传模块 3 '、 第一下拉模块 4' (Key pull-down part) , 自举电容模块 5'、 及 下拉維持模块 6' (Pull-down holding part)。 所述上拉模块 2'、 第一下拉模 块 4'、 自举电容模块 5'、 下拉維持电路 6'分别与第 N级栅极信号点 Q(N) 和该第 N级水平扫描线 G(N)电性连接,所述上拉控制模块 Γ与下传模块 3' 分别与该第 N级栅极信号点 Q(N)电性连接, 所述下拉維持模块 6'输入直流 低电压 VSS。
所述上拉控制模块 Γ包括第一薄膜晶体管 ΤΓ, 其栅极输入来自第 N-1 级 GOA 单元的下传信号 ST(N-1), 漏极电性连接于第 N-1 级水平扫描线 G(N-l), 源极电性连接于该第 N级栅极信号点 Q(N); 所述上拉模块 2'包括 第二薄膜晶体管 T2', 其栅极电性连接该第 Ν级栅极信号点 Q(N;), 漏极输 入第一高频时钟信号 CK或第二高频时钟信号 XCK, 源极电性连接于第 N 级水平扫描线 G(N) ; 所述下传模块 3,包括第三薄膜晶体管 T3,, 其栅极电 性连接该第 Ν级栅极信号点 Q(N;), 漏极输入第一高频时钟信号 CK或第二 高频时钟信号 XCK, 源极输出第 N级下传信号 ST(N); 所述第一下拉模块 4'包括第四薄膜晶体管 T4',其栅极电性连接第 N+1级水平扫描线 G(N+1), 漏极电性连接于第 N级水平扫描线 G(N), 源极输入直流低电压 VSS ; 第五 薄膜晶体管 T5', 其栅极电性连接第 N+1级水平扫描线 G(N+1), 漏极电性 连接于该第 N级栅极信号点 Q(N), 源极输入直流低电压 VSS ; 所述自举电 容模块 5,包括自举电容 Cb,; 所述下拉維持模块 6,包括: 第六薄膜晶体管 T6', 其栅极电性连接第一电路点 Ρ(Ν)', 漏极电性连接第 Ν级水平扫描线 G(N), 源极输入直流低电压 VSS ; 第七薄膜晶体管 T7,, 其栅极电性连接第 一电路点 Ρ(Ν)', 漏极电性连接该第 Ν级栅极信号点(¾Ν), 源极输入直流 低电压 VSS ; 第八薄膜晶体管 Τ8', 其栅极电性连接第二电路点 Κ(Ν)', 漏 极电性连接第 Ν级水平扫描线 G(N), 源极输入直流低电压 VSS ; 第九薄膜 晶体管 T9', 其栅极电性连接第二电路点 Κ(Ν)', 漏极电性连接该第 Ν级栅 极信号点 Q(N), 源极输入直流低电压 VSS ; 第十薄膜晶体管 T10', 其栅极 输入第一低频时钟信号 LC1, 漏极输入第一低频时钟信号 LC1, 源极电性 连接第一电路点 Ρ(Ν)' ; 第十一薄膜晶体管 Τ1Γ, 其栅极输入第二低频时钟 信号 LC2, 漏极输入第一低频时钟信号 LC1, 源极电性连接第一电路点 Ρ(Ν)' ; 第十二薄膜晶体管 Τ12', 其栅极输入第二低频时钟信号 LC2, 漏极 输入第二低频时钟信号 LC2, 源极电性连接第二电路点 Κ(Ν)' ; 第十三薄膜 晶体管 Τ13', 其栅极输入第一低频时钟信号 LC1, 漏极输入第二低频时钟 信号 LC2, 源极电性连接第二电路点 Κ(Ν),; 第十四薄膜晶体管 Τ14,, 其 栅极电性连接该第 Ν级栅极信号点 Q(N), 漏极电性连接第一电路点 P(N)', 源极输入直流低电压 VSS ; 第十五薄膜晶体管 T15', 其栅极电性连接该第 Ν级栅极信号点 Q(N), 漏极电性连接第二电路点 Κ(Ν)', 源极输入直流低 电压 VSS ; 其中, 第六薄膜晶体管 Τ6,与第八薄膜晶体管 Τ8,负责非作用期 间維持第 Ν级水平扫描线 G(N)的低电位, 第七薄膜晶体管 T7,与第九薄膜 晶体管 T9'负责非作用期间維持第 Ν级栅极信号点 Q(N)的低电位。
从整个电路架构上来看, 下拉維持模块 6'处于较长的工作状态, 也就 是第一电路点 p<;Ny与第二电路点 K N)'会长时间处于一个正向的高电位状 态, 这样电路中受到电压应力作用 (Stress) 最严重的几个元件就是薄膜晶 体管 T6,、 Τ7,、 Τ8,、 Τ9,。 随着栅极驱动电路工作时间的增加, 薄膜晶体 管 Τ6,、 Τ7,、 Τ8,、 Τ9,的阈值电压 Vth会逐渐增加, 开态电流会逐渐降低, 这就会导致第 N级水平扫描线 G(N)和第 N级栅极信号点 Q(N)无法很好地 維持在一个稳定的低电位状态, 这也是影响栅极驱动电路可靠性最重要的 因素。
对于非晶硅薄膜晶体管栅极驱动电路而言, 下拉維持模块是必不可少 的, 通常可以设计为一组下拉維持模块, 或者两组交替作用的下拉維持模 块。 设计成两组下拉維持模块主要目的就是为了减轻下拉維持模块中第一 电路点 Ρ(Ν)'与第二电路点 Κ(Ν)'控制的薄膜晶体管 T6'、 T7'、 T8'、 T9'受 到的电压应力作用。 但是实际量测发现, 即使设计成两组下拉維持模块, 薄膜晶体管 Τ6,、 Τ7,、 Τ8,、 Τ9,这四颗薄膜晶体管依然是整个栅极驱动电 路电路中受到电压应力最严重的部分, 也就是说薄膜晶体管的阈值电压 (Vth) 漂移最大。
请参阅图 2a, 为阈值电压漂移前后薄膜晶体管整体电流对数与电压曲 线关系变化示意图, 其中, 实线是未发生阈值电压漂移的电流对数与电压 关系曲线, 虚线是阈值电压漂移后的电流对数与电压关系曲线。 由图 2a可 知, 在同一栅源极电压 Vgs 下, 未发生阈值电压漂移的电流对数 Log(Ids) 大于阈值电压漂移后的电流对数。 请参阅图 2b, 为阈值电压漂移前后薄膜 晶体管整体电流与电压曲线关系变化示意图。 由图 2b可知, 在同一漏源极 电流 Ids下, 未发生阈值电压漂移的栅极电压 Vgl 小于阈值电压漂移后的 栅极电压 Vg2, 即阈值电压漂移后, 想要达到同等的漏源极电流 Ids, 需要 更大的栅极电压。
由图 2a与图 2b可以看出, 阈值电压 Vth往正向漂移会导致薄膜晶体 管的开态电流 Ion逐渐降低, 随着阈值电压 Vth的增加, 薄膜晶体管的开态 电流 Ion会持续降低, 那么, 对于电路而言, 就无法很好地維持第 N级栅 极信号点 Q(N)与第 N级水平扫描线 G(N)电位的稳定, 这样就会导致液晶 显示器画面显示的异常。
如上所述, 栅极驱动电路中最容易失效的元件就是下拉維持模块的薄 膜晶体管 T6'、 Τ7'、 Τ8'、 Τ9', 因此, 为了提高栅极驱动电路和液晶显示 面板的可靠性必须要解决这个问题。 通常设计上的做法是增加这四颗薄膜 晶体管的尺寸, 但是, 增加薄膜晶体管尺寸的同时也会增加薄膜晶体管工 作的关态漏电流, 无法从本^上解决问题。 发明内容
本发明的目的在于提供一种具有自我补偿功能的栅极驱动电路, 通过 具有自我补偿功能的下拉維持模块来提高栅极驱动电路长期搡作的可靠 性, 降低阈值电压漂移对栅极驱动电路运作的影响。
为实现上述目的, 本发明提供一种具有自我补偿功能的栅极驱动电路, 包括: 级联的多个 GOA单元, 按照第 Ν级 GOA单元控制对显示区域第 Ν 级水平扫描线 G(N)充电, 该第 N级 GOA单元包括: 上拉控制模块、 上拉 模块、 下传模块、 第一下拉模块、 自举电容模块、 及下拉維持模块; 所述 上拉模块、 第一下拉模块、 自举电容模块、 下拉維持电路分别与第 N级栅 极信号点 Q(N)和该第 N级水平扫描线 G(N)电性连接, 所述上拉控制模块 与下传模块分别与该第 N级栅极信号点 Q(N)电性连接, 所述下拉維持模块 输入直流低电压 VSS ;
所述下拉維持模块采用第一下拉維持模块与第二下拉維持模块交替工 作构成;
所述第一下拉維持模块包括: 第一薄膜晶体管 Tl, 其栅极电性连接第 一电路点 Ρ(Ν), 漏极电性连接第 Ν级水平扫描线 G(N), 源极输入直流低电 压 VSS ; 第二薄膜晶体管 T2, 其栅极电性连接第一电路点 Ρ(Ν), 漏极电性 连接第 Ν级栅极信号点 Q(N), 源极输入直流低电压 VSS ; 第三薄膜晶体管 T3, 其栅极电性连接第一低频时钟信号 LCI 或第一高频时钟信号 CK, 漏 极电性连接第一低频时钟信号 LC1 或第一高频时钟信号 CK, 源极电性连 接第二电路点 S(N); 第四薄膜晶体管 T4, 其栅极电性连接第 Ν级栅极信号 点 Q N;), 漏极电性连接第二电路点 S(N;), 源极输入直流低电压 VSS ; 第五 薄膜晶体管 Τ5, 其栅极电性连接第 N-1级栅极信号点 Q(N-1), 漏极电性连 接第一电路点 P(N), 源极输入直流低电压 VSS ; 第六薄膜晶体管 T6, 其栅 极电性连接第 N+1级水平扫描线 G(N+1), 漏极电性连接第一电路点 P(N), 源极电性连接第 N级栅极信号点 Q(N) ; 第七薄膜晶体管 T7, 其栅极电性 连接第二低频时钟信号 LC2或第二高频时钟信号 XCK, 漏极电性连接第一 低频时钟信号 LC1 或第一高频时钟信号 CK, 源极电性连接第二电路点 S(N) ; 第一电容 Cstl, 其上极板电性连接第二电路点 S(N), 下极板电性连 接第一电路点 P N);
所述第二下拉維持模块包括: 第八薄膜晶体管 T8, 其栅极电性连接第 三电路点 Κ(Ν), 漏极电性连接第 Ν级水平扫描线 G(N), 源极输入直流低 电压 VSS ; 第九薄膜晶体管 T9, 其栅极电性连接第三电路点 Κ(Ν), 漏极电 性连接第 Ν级栅极信号点 Q(N), 源极输入直流低电压 VSS ; 第十薄膜晶体 管 T10,其栅极电性连接第二低频时钟信号 LC2或第二高频时钟信号 XCK, 漏极电性连接第二低频时钟信号 LC2或第二高频时钟信号 XCK, 源极电性 连接第四电路点 T(N) ; 第十一薄膜晶体管 Tll, 其栅极电性连接第 Ν级栅 极信号点 Q(N),漏极电性连接第四电路点 T(N),源极输入直流低电压 VSS ; 第十二薄膜晶体管 T12, 其栅极电性连接第 N-1 级栅极信号点(¾Ν-1), 漏 极电性连接第三电路点 K(N), 源极输入直流低电压 VSS ; 第十三薄膜晶体 管 T13, 其栅极电性连接第 N+1级水平扫描线 G(N+1), 漏极电性连接第三 电路点 K(N), 源极电性连接第 N级栅极信号点 Q(N) ; 第十四薄膜晶体管 T14, 其栅极电性连接第一低频时钟信号 LCI或第一高频时钟信号 CK, 漏 极电性连接第二低频时钟信号 LC2或第二高频时钟信号 XCK, 源极电性连 接第四电路点 T(N); 第二电容 Cst2, 其上极板电性连接第四电路点 T(N), 下极板电性连接第三电路点 K(N;)。
所述上拉控制模块包括第十五薄膜晶体管 T15, 其栅极输入来自第 N-1 级 GOA 单元的下传信号 ST(N-1), 漏极电性连接于第 N-1 级水平扫描线 G(N-l), 源极电性连接于该第 N级栅极信号点 Q(N) ; 所述上拉模块包括第 十六薄膜晶体管 T16, 其栅极电性连接该第 Ν级栅极信号点 Q(N), 漏极输 入第一高频时钟信号 CK或第二高频时钟信号 XCK, 源极电性连接于第 N 级水平扫描线 G(N) ; 所述下传模块包括第十七薄膜晶体管 T17, 其栅极电 性连接该第 Ν级栅极信号点 Q(N;), 漏极输入第一高频时钟信号 CK或第二 高频时钟信号 XCK, 源极输出第 N级下传信号 ST(N); 所述第一下拉模块 包括第十八薄膜晶体管 T18,其栅极电性连接第 Ν+2级水平扫描线 G(N+2), 漏极电性连接于第 N级水平扫描线 G(N), 源极输入直流低电压 VSS ; 第十 九薄膜晶体管 T19, 其栅极电性连接第 Ν+2级水平扫描线 G(N+2), 漏极电 性连接于该第 N级栅极信号点 Q(N), 源极输入直流低电压 VSS ; 所述自举 电容模块包括自举电容 Cb。
所述栅极驱动电路的第一级连接关系中, 第五薄膜晶体管 T5的栅极电 性连接于电路启动信号 STV; 第十二薄膜晶体管 T12的栅极电性连接于电 路启动信号 STV; 第十五薄膜晶体管 T15的栅极和漏极均电性连接于电路 启动信号 STV。
所述栅极驱动电路的最后一级连接关系中, 第六薄膜晶体管 T6的栅极 电性连接于电路启动信号 STV; 第十三薄膜晶体管 T13的栅极电性连接于 电路启动信号 STV; 第十八薄膜晶体管 T18的栅极电性连接于第二级水平 扫描线 G(2); 第十九薄膜晶体管 T19的栅极电性连接于第二级水平扫描线 G(2)。
所述第一下拉維持模块还包括: 第三电容 Cst3, 其上极板电性连接第 一电路点 P N;), 下极板输入直流低电压 VSS ; 所述第一下拉維持模块与第 二下拉維持模块的电路架构相同。
所述第一下拉維持模块还包括: 第二十薄膜晶体管 T20, 其栅极电性连 接第 N+1 级水平扫描线 G(N+1), 漏极电性连接第二电路点 S(N), 源极输 入直流低电压 VSS ; 所述第一下拉維持模块与第二下拉維持模块的电路架 构相同。 所述第一下拉維持模块还包括: 第三电容 Cst3, 其上极板电性连接第 一电路点 P(N), 下极板输入直流低电压 VSS ; 第二十薄膜晶体管 T20, 其 栅极电性连接第 N+1 级水平扫描线 G(N+1), 漏极电性连接第二电路点 S(N), 源极输入直流低电压 VSS ; 所述第一下拉維持模块与第二下拉維持 模块的电路架构相同。
所述第一高频时钟信号 CK与第二高频时钟信号 XCK是两个相位完全 相反的高频时钟信号源; 所述第一低频时钟信号 LC1 与第二低频时钟信号 LC2是两个相位完全相反的低频信号源。
所述第一下拉模块中第十八薄膜晶体管 T18 的栅极与第十九薄膜晶体 管 T19的栅极均电性连接第 N+2级水平扫描线 G(N+2),主要为了实现第 N 级栅极信号点 Q(N)电位呈三个阶段, 第一阶段是上升至一个高电位并維持 一段时间, 第二阶段在第一阶段的基础上又上升一个高电位并維持一段时 间, 第三阶段在第二阶段的基础上下降到与第一阶段基本持平的高电位, 然后利用三个阶段中的第三阶段进行阈值电压的自我补偿。
所述第 N级栅极信号点 Q(N)电位呈三个阶段, 其中第三阶段的变化主 要受第六薄膜晶体管 T6或第十三晶体管 (T13) 的影响。
本发明的有益效果: 本发明提供一种具有自我补偿功能的栅极驱动电 路, 利用电容的自举作用来控制下拉維持模块的第一电路点 P(N)或第三电 路点 K(N), 设计能够检测薄膜晶体管阈值电压的功能, 并将阈值电压存贮 在第一电路点 P(N)或第三电路点 K(N),进而实现第一电路点 P(N)或第三电 路点 K(N)的控制电压随着薄膜晶体管的阈值电压漂移而变化。 本发明通过 设计具有自我补偿功能的下拉維持模块来提高栅极驱动电路长期搡作的可 靠性, 降低阈值电压漂移对栅极驱动电路运作的影响。
为了能更进一步了解本发明的特征以及技术内容, 请参阅以下有关本 发明的详细说明与附图, 然而附图仅提供参考与说明用, 并非用来对本发 明加以限制。 附图说明
下面结合附图, 通过对本发明的具体实施方式详细描述, 将使本发明 的技术方案及其它有益效果显而易见。
附图中,
图 1为目前常采用的栅极驱动电路架构示意图;
图 2a为阈值电压漂移前后薄膜晶体管整体电流对数与电压曲线关系变 化示意图; 图 2b为阈值电压漂移前后薄膜晶体管整体电流与电压曲线关系变化示 意图;
图 3为本发明具有自我补偿功能的栅极驱动电路单级架构示意图; 图 4 为本发明具有自我补偿功能的栅极驱动电路单级架构第一级连接 关系示意图;
图 5 为本发明具有自我补偿功能的栅极驱动电路单级架构最后一级连 接关系示意图;
图 6为图 3中采用的第一下拉維持模块第一实施例的电路图; 图 7a为阈值电压漂移前图 3所示的栅极驱动电路时序图;
图 7b为阈值电压漂移后图 3所示的栅极驱动电路时序图;
图 8为图 3中采用的第一下拉維持模块第二实施例的电路图; 图 9为图 3中采用的第一下拉維持模块第三实施例的电路图; 图 10为图 3中采用的第一下拉維持模块第四实施例的电路图。 具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果, 以下结合本发明 的优选实施例及其附图进行详细描述。
请参阅图 3,为本发明具有自我补偿功能的栅极驱动电路单级架构示意 图。 包括: 级联的多个 GOA单元, 按照第 N级 GOA单元控制对显示区域 第 N级水平扫描线 G(N)充电, 该第 N级 GOA单元包括: 上拉控制模块 1、 上拉模块 2、 下传模块 3、 第一下拉模块 4、 自举电容模块 5、 及下拉維持 模块 6 ; 所述上拉模块 2、 第一下拉模块 4、 自举电容模块 5、 下拉維持电 路 6分别与第 N级栅极信号点 Q(N)和该第 N级水平扫描线 G(N)电性连接, 所述上拉控制模块 1与下传模块 3分别与该第 N级栅极信号点 Q(N)电性连 接, 所述下拉維持模块 6输入直流低电压 VSS。
所述下拉維持模块 6采用第一下拉維持模块 61与第二下拉維持模块 62 交替工作构成;
所述第一下拉維持模块 61包括: 第一薄膜晶体管 Tl, 其栅极电性连接 第一电路点 Ρ(Ν), 漏极电性连接第 Ν级水平扫描线 G(N), 源极输入直流低 电压 VSS ; 第二薄膜晶体管 T2, 其栅极电性连接第一电路点 Ρ(Ν), 漏极电 性连接第 Ν级栅极信号点 Q(N), 源极输入直流低电压 VSS ; 第三薄膜晶体 管 T3, 其栅极电性连接第一低频时钟信号 LC1或第一高频时钟信号 CK, 漏极电性连接第一低频时钟信号 LC1 或第一高频时钟信号 CK, 源极电性 连接第二电路点 S(N); 第四薄膜晶体管 T4, 其栅极电性连接第 Ν级栅极信 号点 Q(N), 漏极电性连接第二电路点 S(N), 源极输入直流低电压 VSS ; 第 五薄膜晶体管 T5, 其栅极电性连接第 N-1级栅极信号点 Q(N-1), 漏极电性 连接第一电路点 P(N), 源极输入直流低电压 VSS ; 第六薄膜晶体管 T6, 其 栅极电性连接第 N+1 级水平扫描线 G(N+1), 漏极电性连接第一电路点 P(N), 源极电性连接第 N级栅极信号点 Q(N); 第七薄膜晶体管 T7, 其栅极 电性连接第二低频时钟信号 LC2或第二高频时钟信号 XCK, 漏极电性连接 第一低频时钟信号 LC1 或第一高频时钟信号 CK, 源极电性连接第二电路 点 S(N) ; 第一电容 Cstl, 其上极板电性连接第二电路点 S(N), 下极板电性 连接第一电路点 P N);
所述第二下拉維持模块 62包括: 第八薄膜晶体管 T8, 其栅极电性连接 第三电路点 Κ(Ν), 漏极电性连接第 Ν级水平扫描线 G(N), 源极输入直流 低电压 VSS ; 第九薄膜晶体管 T9, 其栅极电性连接第三电路点 Κ(Ν), 漏极 电性连接第 Ν级栅极信号点 Q(N), 源极输入直流低电压 VSS ; 第十薄膜晶 体管 T10, 其栅极电性连接第二低频时钟信号 LC2 或第二高频时钟信号 XCK, 漏极电性连接第二低频时钟信号 LC2或第二高频时钟信号 XCK, 源 极电性连接第四电路点 T(N) ; 第十一薄膜晶体管 Tll, 其栅极电性连接第 Ν级栅极信号点 Q(N), 漏极电性连接第四电路点 T(N), 源极输入直流低电 压 VSS ; 第十二薄膜晶体管 T12, 其栅极电性连接第 N-1 级栅极信号点 Q(N-l), 漏极电性连接第三电路点 K N;), 源极输入直流低电压 VSS ; 第十 三薄膜晶体管 T13, 其栅极电性连接第 N+1级水平扫描线 G(N+1), 漏极电 性连接第三电路点 K(N), 源极电性连接第 N级栅极信号点 Q(N) ; 第十四 薄膜晶体管 T14, 其栅极电性连接第一低频时钟信号 LC1 或第一高频时钟 信号 CK,漏极电性连接第二低频时钟信号 LC2或第二高频时钟信号 XCK, 源极电性连接第四电路点 T(N) ; 第二电容 Cst2, 其上极板电性连接第四电 路点 T(N), 下极板电性连接第三电路点 K(N)。
所述上拉控制模块 1 包括第十五薄膜晶体管 T15, 其栅极输入来自第 N-1级 GOA单元的下传信号 ST(N-1), 漏极电性连接于第 N-1级水平扫描 线 G(N-1), 源极电性连接于该第 N级栅极信号点 Q(N) ; 所述上拉模块 2 包括第十六薄膜晶体管 T16, 其栅极电性连接该第 Ν级栅极信号点 Q(N), 漏极输入第一高频时钟信号 CK或第二高频时钟信号 XCK, 源极电性连接 于第 N级水平扫描线 G N) ; 所述下传模块 3包括第十七薄膜晶体管 T17, 其栅极电性连接该第 Ν 级栅极信号点 Q(N;), 漏极输入第一高频时钟信号 CK或第二高频时钟信号 XCK, 源极输出第 N级下传信号 ST(N); 所述第 一下拉模块 4包括第十八薄膜晶体管 T18, 其栅极电性连接第 Ν+2级水平 扫描线 G(N+2), 漏极电性连接于第 N级水平扫描线 G(N), 源极输入直流 低电压 VSS ; 第十九薄膜晶体管 T19, 其栅极电性连接第 Ν+2级水平扫描 线 G(N+2), 漏极电性连接于该第 N级栅极信号点 Q(N), 源极输入直流低 电压 VSS ; 所述第一下拉模块 4 中第十八薄膜晶体管 T18的栅极与第十九 薄膜晶体管 T19的栅极均电性连接第 N+2级水平扫描线 G(N+2),这样做的 目的是为了使第 N级栅极信号点 Q(N)电位呈三个阶段, 第一阶段是上升至 一个高电位并維持一段时间, 第二阶段在第一阶段的基础上又上升一个高 电位并維持一段时间, 第三阶段在第二阶段的基础上下降到与第一阶段基 本持平的高电位, 然后利用三个阶段中的第三阶段进行阈值电压的自我补 偿; 所述自举电容模块 5包括自举电容 Cb。
所述多级水平扫描线之间的级数是循环的,即当第 N级水平扫描线 G(N) 中的 N为最后一级 Last时, 第 N+2级水平扫描线 G(N+2)代表第二级水平 扫描线 G(2); 当第 N级水平扫描线 G(N)中的 N为倒数第二级 Last-1 时, 第 N+2级水平扫描线 G(N+2)代表第一级水平扫描线 G(l), 以此类推。
请参阅图 4并结合图 3, 图 4为本发明具有自我补偿功能的栅极驱动电 路单级架构第一级连接关系示意图, 即 N为 1 时的栅极驱动电路连接关系 示意图。 其中, 第五薄膜晶体管 T5的栅极电性连接于电路启动信号 STV; 第十二薄膜晶体管 T12的栅极电性连接于电路启动信号 STV; 第十五薄膜 晶体管 T15的栅极和漏极均电性连接于电路启动信号 STV。
请参阅图 5并结合图 3, 图 5为本发明具有自我补偿功能的栅极驱动电 路单级架构最后一级连接关系示意图, 即 N为最后一级 Last时的栅极驱动 电路连接关系示意图。 其中, 第六薄膜晶体管 T6的栅极电性连接于电路启 动信号 STV;第十三薄膜晶体管 T13的栅极电性连接于电路启动信号 STV; 第十八薄膜晶体管 T18的栅极电性连接于第二级水平扫描线 G(2); 第十九 薄膜晶体管 T19的栅极电性连接于第二级水平扫描线 G(2)。
请参阅图 6, 为图 3中采用的第一下拉維持模块第一实施例的电路图。 包括: 第一薄膜晶体管 Tl, 其栅极电性连接第一电路点 Ρ(Ν:), 漏极电性连 接第 Ν级水平扫描线 G(N), 源极输入直流低电压 VSS ; 第二薄膜晶体管 T2, 其栅极电性连接第一电路点 P(N), 漏极电性连接第 N 级栅极信号点 Q(N), 源极输入直流低电压 VSS ; 第三薄膜晶体管 T3, 其栅极电性连接第 一低频时钟信号 LC1 或第一高频时钟信号 CK, 漏极电性连接第一低频时 钟信号 LC1 或第一高频时钟信号 CK, 源极电性连接第二电路点 S N); 第 四薄膜晶体管 Τ4, 其栅极电性连接第 Ν级栅极信号点 Q(N), 漏极电性连 接第二电路点 S(N), 源极输入直流低电压 VSS, 第四薄膜晶体管 T4主要在 作用期间拉低第二电路点 s(N), 这样就可以实现通过第二电路点 S(N)来控 制第一电路点 P(N)电位的目的; 第五薄膜晶体管 T5, 其栅极电性连接第 N-1 级栅极信号点 Q(N-1), 漏极电性连接第一电路点 P(N), 源极输入直流 低电压 VSS, 所述第五薄膜晶体管 T5 的作用是确保在第 N级水平扫描线 G(N)和第 N级栅极信号点 Q(N)输出的作用期间,第一电路点 P(N)处于低电 位的关闭状态,从而确保第 N级水平扫描线 G(N)和第 N级栅极信号点 Q(N) 能够正常输出; 第六薄膜晶体管 T6, 其栅极电性连接第 N+1级水平扫描线 G(N+1), 漏极电性连接第一电路点 P(N), 源极电性连接第 N级栅极信号点 Q(N),这样设计的目的就是利用第 N级栅极信号点 Q(N)的三个阶段中的第 三阶段的电位进行阈值电压的侦测, 并将其电位存贮在第一电路点 P(N) ; 第七薄膜晶体管 T7, 其栅极电性连接第二低频时钟信号 LC2或第二高频时 钟信号 XCK, 漏极电性连接第一低频时钟信号 LC1 或第一高频时钟信号 CK, 源极电性连接第二电路点 S(N) ; 第一电容 Cstl, 其上极板电性连接第 二电路点 S N;), 下极板电性连接第一电路点 P N;)。 所述第一下拉維持模块 与第二下拉維持模块的电路架构相同。
请参阅图 7a、 7b并结合图 3, 图 7a为阈值电压漂移前图 3所示的栅极 驱动电路时序图,图 7b为阈值电压漂移后图 3所示的栅极驱动电路时序图。 在图 7a、 7b中, STV信号是电路启动信号, 第一高频时钟信号 CK和第二 高频时钟信号 XCK是一组相位完全相反的高频时钟控制信号, 第一低频时 钟信号 LC1和第二低频时钟信号 LC2是两个相位完全相反的低频信号源, G(N-l)是第 N-1级水平扫描线,即前一级的扫描输出信号, ST(N-1)是第 N-1 级下传信号, 即前一级的下传信号, Q N-1)是第 N-1 级栅极信号点, 即前 一级的栅极信号点, Q(N)是第 N级栅极信号点, 即本级的栅极信号点。
图 7a、 7b是第一低频时钟信号 LCI处于工作状态下的时序图, 即第一 下拉維持模块 61处于工作状态下的时序图。 可以看出, 第 N级栅极信号点 Q(N)电位呈三个阶段, 第一阶段是上升至一个高电位并維持一段时间, 第 二阶段在第一阶段的基础上又上升一个高电位并維持一段时间, 第三阶段 在第二阶段的基础上下降到与第一阶段基本持平的高电位, 其中第三阶段 的变化主要受第六薄膜晶体管 T6的影响。 由图 7a可知, 在液晶面板刚点 亮的初始时间 TO时, 阈值电压 Vth较小, 即栅极驱动电路没经过长期搡作 时, 阈值电压 Vth未发生漂移, 第 N级栅极信号点 Q(N)的第三阶段电位较 低, 与之对应的第一电路点 P(N)的电位也较低。 由图 7b可知, 第 N级栅 极信号点 Q(N)的第三阶段电位在电压应力作用下阈值电压 Vth漂移后随之 抬升, 这样就可以实现利用该部分来侦测第一薄膜晶体管 T1与第二薄膜晶 体管 T2的阈值电压的目的。
由图 7a与 7b可知图 3所示栅极驱动电路的工作过程为: 第 N+1级水 平扫描线 G N+l)导通时, 第六薄膜晶体管 T6打开, 此时第 N级栅极信号 点 Q(N)与第一电路点 P(N)的电位相同, 第二薄膜晶体管 T2等效成二极体 接法, 第一电路点 P(N)在第 N级栅极信号点 Q(N)的第三阶段, 可以通过第 六薄膜晶体管 T6存储第一薄膜晶体管 T1与第二薄膜晶体管 T2的阈值电压 的值, 那么, 随着阈值电压 Vth的漂移, 第 N级栅极信号点 Q(N)的第三阶 段的电位抬升, 第一电路点 P N)存贮的阈值电压的电位值也抬升, 然后, 第二电路点 S(N)再通过第一电容 Cstl来抬升第一电路点 P(N),这样就可以 补偿阈值电压的变化。
图 7a、 7b中, 阈值电压 Vth漂移前后, 第 N级栅极信号点 Q(N)与第 一电路点 P(N)的电位也发生了明显的变化, 尤其是第一电路点 P(N)的电位 的增加能够有效地降低阈值电压漂移对第一薄膜晶体管 T1与第二薄膜晶体 管 T2开态电流的影响, 从而确保第 N级水平扫描线 G(N)和第 N级栅极信 号点 Q(N)能够在长期搡作后, 依然很好地維持在低电位状态。
同理, 当第二低频时钟信号 LC2处于工作状态时 (未图示), 第二下拉 維持模块 62工作, 第 N级栅极信号点 Q(N) 呈三个阶段, 第一阶段是上升 至一个高电位并維持一段时间, 第二阶段在第一阶段的基础上又上升一个 高电位并維持一段时间, 第三阶段在第二阶段的基础上下降到与第一阶段 基本持平的高电位, 其中第三阶段的变化主要受第十三薄膜晶体管 T13 的 影响, 第三阶段在阈值电压漂移前较低, 阈值电压漂移后随之抬升, 这样 就可以实现利用该部分来侦测第八薄膜晶体管 T8与第九晶体管 T9的阈值 电压的目的。 此时图 3所示栅极驱动电路的工作过程为: 第 N+1级水平扫 描线 G N+l)导通时, 第十三薄膜晶体管 T13打开, 此时第 N级栅极信号点 Q(N)与第三电路点 K(N)的电位相同, 第九薄膜晶体管 T9等效成二极体接 法, 第三电路点 K(N)在第 N级栅极信号点 Q(N)的第三阶段, 可以通过第 十三薄膜晶体管 T13存储第八薄膜晶体管 T8与第九晶体管 T9的阈值电压 的值, 那么, 随着阈值电压 Vth的漂移, 第 N级栅极信号点 Q(N)的第三阶 段的电位抬升, 第三电路点 K N)存贮的阈值电压的电位值也抬升, 然后, 第四电路点 T(N)再通过第二电容 Cst2来抬升第三电路点 K(N), 这样就可 以补偿阈值电压的变化,从而确保第 N级水平扫描线 G(N)和第 N级栅极信 号点 Q(N)能够在长期搡作后, 依然很好地維持在低电位状态。
如图 7a、 7b所示, 第一低频时钟信号 LC1 和第二低频时钟信号 LC2 是交替工作的, 也就是图 3所示的第一下拉維持模块 61与第二下拉維持模 块 62交替工作, 这样可以减少每个模块的工作时间, 使得受到的电压应力 作用降低, 进而提高电路整体的可靠性。
请参阅图 8并结合图 6, 图 8为图 3采用的第一下拉維持模块第二实施 例的电路图。 图 8是在图 6的基础上增加一个第三电容 Cst3, 其上极板电 性连接第一电路点 P(N;), 下极板输入直流低电压 VSS, 第三电容 Cst3的主 要作用就是存贮阈值电压。 所述第一下拉維持模块与第二下拉維持模块的 电路架构相同。 由于第一薄膜晶体管 T1 与第二薄膜晶体管 T2本身存在一 定的寄生电容, 可以起到第三电容 Cst3的作用, 因此, 在实际电路设计中 第三电容 Cst3可以去掉。
请参阅图 9并结合图 6, 图 9为图 3采用的第一下拉維持模块第三实施 例的电路图。 图 9是在图 6的基础上增加一个第二十薄膜晶体管 T20, 其栅 极电性连接第 N+1级水平扫描线 G(N+1), 漏极电性连接第二电路点 S(N), 源极输入直流低电压 VSS ; 所述第一下拉維持模块与第二下拉維持模块的 电路架构相同。 该第二十薄膜晶体管 T20的主要目的是弥补第 N级栅极信 号点 Q(N)第一阶段电位不高, 而导致的第二电路点 S(N)作用期间电位下拉 不够低。
请参阅图 10并结合图 6, 图 10为图 3采用的第一下拉維持模块第四实 施例的电路图。 图 10是在图 6的基础上增加: 第三电容 Cst3, 其上极板电 性连接第一电路点 P(N), 下极板输入直流低电压 VSS ; 第二十薄膜晶体管 T20, 其栅极电性连接第 N+1级水平扫描线 G(N+1), 漏极电性连接第二电 路点 S N;), 源极输入直流低电压 VSS。 所述第一下拉維持模块与第二下拉 維持模块的电路架构相同。
图 3所示的栅极驱动电路中第一下拉維持模块 61与第二下拉維持模块
62均可以替换为图 6、 图 8、 图 9、 图 10 中的任意一种下拉維持模块电路 架构, 且第一下拉維持模块 61 与第二下拉維持模块 62 电路架构相同, 其 替换后的栅极驱动电路时序图与图 7a、 图 7b相同, 其工作过程与图 3所示 的栅极驱动电路相同, 因此不再赘述。
综上所述, 本发明提供一种具有自我补偿功能的栅极驱动电路, 针对 现有栅极驱动电路架构中下拉維持模块受到电压应力严重、 最容易失效的 问题, 利用电容的自举作用来控制下拉維持模块的第一电路点 P(N)或第三 电路点 K(N), 设计能够检测薄膜晶体管阈值电压的功能, 并将阈值电压存 贮在第一电路点 P(N)或第三电路点 K(N),进而实现第一电路点 P(N)或第三 电路点 K(N)的控制电压随着薄膜晶体管的阈值电压漂移而变化。 本发明通 过设计具有自我补偿功能的下拉維持模块来提高栅极驱动电路长期搡作的 可靠性, 降低阈值电压漂移对栅极驱动电路运作的影响。
以上所述, 对于本领域的普通技术人员来说, 可以根据本发明的技术 方案和技术构思作出其他各种相应的改变和变形, 而所有这些改变和变形 都应属于本发明权利要求的保护范围。

Claims

权 利 要 求
1、 一种具有自我补偿功能的栅极驱动电路, 包括: 级联的多个 GOA 单元, 按照第 N级 GOA单元控制对显示区域第 N级水平扫描线充电, 该 第 N级 GOA单元包括: 上拉控制模块、 上拉模块、 下传模块、 第一下拉模 块、 自举电容模块、 及下拉維持模块; 所述上拉模块、 第一下拉模块、 自 举电容模块、 下拉維持电路分别与第 N级栅极信号点和该第 N级水平扫描 线电性连接, 所述上拉控制模块与下传模块分别与该第 N级栅极信号点电 性连接, 所述下拉維持模块输入直流低电压;
所述下拉維持模块采用第一下拉維持模块与第二下拉維持模块交替工 作构成;
所述第一下拉維持模块包括: 第一薄膜晶体管, 其栅极电性连接第一 电路点, 漏极电性连接第 N级水平扫描线, 源极输入直流低电压; 第二薄 膜晶体管, 其栅极电性连接第一电路点, 漏极电性连接第 N级栅极信号点, 源极输入直流低电压; 第三薄膜晶体管, 其栅极电性连接第一低频时钟信 号或第一高频时钟信号, 漏极电性连接第一低频时钟信号或第一高频时钟 信号, 源极电性连接第二电路点; 第四薄膜晶体管, 其栅极电性连接第 N 级栅极信号点, 漏极电性连接第二电路点, 源极输入直流低电压; 第五薄 膜晶体管, 其栅极电性连接第 N-1 级栅极信号点, 漏极电性连接第一电路 点, 源极输入直流低电压; 第六薄膜晶体管, 其栅极电性连接第 N+1级水 平扫描线, 漏极电性连接第一电路点, 源极电性连接第 N级栅极信号点; 第七薄膜晶体管, 其栅极电性连接第二低频时钟信号或第二高频时钟信号, 漏极电性连接第一低频时钟信号或第一高频时钟信号, 源极电性连接第二 电路点; 第一电容, 其上极板电性连接第二电路点, 下极板电性连接第一 电路点;
所述第二下拉維持模块包括: 第八薄膜晶体管, 其栅极电性连接第三 电路点, 漏极电性连接第 N级水平扫描线, 源极输入直流低电压; 第九薄 膜晶体管, 其栅极电性连接第三电路点, 漏极电性连接第 N级栅极信号点, 源极输入直流低电压; 第十薄膜晶体管, 其栅极电性连接第二低频时钟信 号或第二高频时钟信号, 漏极电性连接第二低频时钟信号或第二高频时钟 信号, 源极电性连接第四电路点; 第十一薄膜晶体管, 其栅极电性连接第 N 级栅极信号点, 漏极电性连接第四电路点, 源极输入直流低电压; 第十二 薄膜晶体管, 其栅极电性连接第 N-1 级栅极信号点, 漏极电性连接第三电 路点, 源极输入直流低电压; 第十三薄膜晶体管, 其栅极电性连接第 N+1 级水平扫描线, 漏极电性连接第三电路点, 源极电性连接第 N级栅极信号 点; 第十四薄膜晶体管, 其栅极电性连接第一低频时钟信号或第一高频时 钟信号, 漏极电性连接第二低频时钟信号或第二高频时钟信号, 源极电性 连接第四电路点; 第二电容, 其上极板电性连接第四电路点, 下极板电性 连接第三电路点。
2、 如权利要求 1所述的具有自我补偿功能的栅极驱动电路, 其中, 所 述上拉控制模块包括第十五薄膜晶体管,其栅极输入来自第 N-1级 GOA单 元的下传信号, 漏极电性连接于第 N-1 级水平扫描线, 源极电性连接于该 第 N级栅极信号点; 所述上拉模块包括第十六薄膜晶体管, 其栅极电性连 接该第 N级栅极信号点, 漏极输入第一高频时钟信号或第二高频时钟信号, 源极电性连接于第 N级水平扫描线;所述下传模块包括第十七薄膜晶体管, 其栅极电性连接该第 N级栅极信号点, 漏极输入第一高频时钟信号或第二 高频时钟信号, 源极输出第 N级下传信号; 所述第一下拉模块包括第十八 薄膜晶体管, 其栅极电性连接第 N+2级水平扫描线, 漏极电性连接于第 N 级水平扫描线, 源极输入直流低电压; 第十九薄膜晶体管, 其栅极电性连 接第 N+2级水平扫描线, 漏极电性连接于该第 N级栅极信号点, 源极输入 直流低电压; 所述自举电容模块包括自举电容。
3、 如权利要求 2所述的具有自我补偿功能的栅极驱动电路, 其中, 所 述栅极驱动电路的第一级连接关系中, 第五薄膜晶体管的栅极电性连接于 电路启动信号; 第十二薄膜晶体管的栅极电性连接于电路启动信号; 第十 五薄膜晶体管的栅极和漏极均电性连接于电路启动信号。
4、 如权利要求 2所述的具有自我补偿功能的栅极驱动电路, 其中, 所 述栅极驱动电路的最后一级连接关系中, 第六薄膜晶体管的栅极电性连接 于电路启动信号; 第十三薄膜晶体管的栅极电性连接于电路启动信号; 第 十八薄膜晶体管的栅极电性连接于第二级水平扫描线; 第十九薄膜晶体管 的栅极电性连接于第二级水平扫描线。
5、 如权利要求 1所述的具有自我补偿功能的栅极驱动电路, 其中, 所 述第一下拉維持模块还包括: 第三电容, 其上极板电性连接第一电路点, 下极板输入直流低电压; 所述第一下拉維持模块与第二下拉維持模块的电 路架构相同。
6、 如权利要求 1所述的具有自我补偿功能的栅极驱动电路, 其中, 所 述第一下拉維持模块还包括: 第二十薄膜晶体管, 其栅极电性连接第 N+1 级水平扫描线, 漏极电性连接第二电路点, 源极输入直流低电压; 所述第 一下拉維持模块与第二下拉維持模块的电路架构相同。
7、 如权利要求 1所述的具有自我补偿功能的栅极驱动电路, 其中, 所 述第一下拉維持模块还包括: 第三电容, 其上极板电性连接第一电路点, 下极板输入直流低电压; 第二十薄膜晶体管, 其栅极电性连接第 N+1级水 平扫描线, 漏极电性连接第二电路点, 源极输入直流低电压; 所述第一下 拉維持模块与第二下拉維持模块的电路架构相同。
8、 如权利要求 2所述的具有自我补偿功能的栅极驱动电路, 其中, 所 述第一高频时钟信号与第二高频时钟信号是两个相位完全相反的高频时钟 信号源; 所述第一低频时钟信号与第二低频时钟信号是两个相位完全相反 的低频信号源。
9、 如权利要求 2所述的具有自我补偿功能的栅极驱动电路, 其中, 所 述第一下拉模块中第十八薄膜晶体管的栅极与第十九薄膜晶体管的栅极均 电性连接第 N+2级水平扫描线, 主要为了实现第 N级栅极信号点电位呈三 个阶段, 第一阶段是上升至一个高电位并維持一段时间, 第二阶段在第一 阶段的基础上又上升一个高电位并維持一段时间, 第三阶段在第二阶段的 基础上下降到与第一阶段基本持平的高电位, 然后利用三个阶段中的第三 阶段进行阈值电压的自我补偿。
10、 如权利要求 9 所述的具有自我补偿功能的栅极驱动电路, 其中, 所述第 N级栅极信号点电位呈三个阶段, 其中第三阶段的变化主要受第六 薄膜晶体管或第十三晶体管的影响。
11、 一种具有自我补偿功能的栅极驱动电路, 包括: 级联的多个 GOA 单元, 按照第 N级 GOA单元控制对显示区域第 N级水平扫描线充电, 该 第 N级 GOA单元包括: 上拉控制模块、 上拉模块、 下传模块、 第一下拉模 块、 自举电容模块、 及下拉維持模块; 所述上拉模块、 第一下拉模块、 自 举电容模块、 下拉維持电路分别与第 N级栅极信号点和该第 N级水平扫描 线电性连接, 所述上拉控制模块与下传模块分别与该第 N级栅极信号点电 性连接, 所述下拉維持模块输入直流低电压;
所述下拉維持模块采用第一下拉維持模块与第二下拉維持模块交替工 作构成;
所述第一下拉維持模块包括: 第一薄膜晶体管, 其栅极电性连接第一 电路点, 漏极电性连接第 N级水平扫描线, 源极输入直流低电压; 第二薄 膜晶体管, 其栅极电性连接第一电路点, 漏极电性连接第 N级栅极信号点, 源极输入直流低电压; 第三薄膜晶体管, 其栅极电性连接第一低频时钟信 号或第一高频时钟信号, 漏极电性连接第一低频时钟信号或第一高频时钟 信号, 源极电性连接第二电路点; 第四薄膜晶体管, 其栅极电性连接第 N 级栅极信号点, 漏极电性连接第二电路点, 源极输入直流低电压; 第五薄 膜晶体管, 其栅极电性连接第 N-1 级栅极信号点, 漏极电性连接第一电路 点, 源极输入直流低电压; 第六薄膜晶体管, 其栅极电性连接第 N+1级水 平扫描线, 漏极电性连接第一电路点, 源极电性连接第 N级栅极信号点; 第七薄膜晶体管, 其栅极电性连接第二低频时钟信号或第二高频时钟信号, 漏极电性连接第一低频时钟信号或第一高频时钟信号, 源极电性连接第二 电路点; 第一电容, 其上极板电性连接第二电路点, 下极板电性连接第一 电路点;
所述第二下拉維持模块包括: 第八薄膜晶体管, 其栅极电性连接第三 电路点, 漏极电性连接第 N级水平扫描线, 源极输入直流低电压; 第九薄 膜晶体管, 其栅极电性连接第三电路点, 漏极电性连接第 N级栅极信号点, 源极输入直流低电压; 第十薄膜晶体管, 其栅极电性连接第二低频时钟信 号或第二高频时钟信号, 漏极电性连接第二低频时钟信号或第二高频时钟 信号, 源极电性连接第四电路点; 第十一薄膜晶体管, 其栅极电性连接第 N 级栅极信号点, 漏极电性连接第四电路点, 源极输入直流低电压; 第十二 薄膜晶体管, 其栅极电性连接第 N-1 级栅极信号点, 漏极电性连接第三电 路点, 源极输入直流低电压; 第十三薄膜晶体管, 其栅极电性连接第 N+1 级水平扫描线, 漏极电性连接第三电路点, 源极电性连接第 N级栅极信号 点; 第十四薄膜晶体管, 其栅极电性连接第一低频时钟信号或第一高频时 钟信号, 漏极电性连接第二低频时钟信号或第二高频时钟信号, 源极电性 连接第四电路点; 第二电容, 其上极板电性连接第四电路点, 下极板电性 连接第三电路点;
其中, 所述上拉控制模块包括第十五薄膜晶体管, 其栅极输入来自第 N-1级 GOA单元的下传信号, 漏极电性连接于第 N-1级水平扫描线, 源极 电性连接于该第 N级栅极信号点; 所述上拉模块包括第十六薄膜晶体管, 其栅极电性连接该第 N级栅极信号点, 漏极输入第一高频时钟信号或第二 高频时钟信号, 源极电性连接于第 N级水平扫描线; 所述下传模块包括第 十七薄膜晶体管, 其栅极电性连接该第 N级栅极信号点, 漏极输入第一高 频时钟信号或第二高频时钟信号, 源极输出第 N级下传信号; 所述第一下 拉模块包括第十八薄膜晶体管, 其栅极电性连接第 N+2级水平扫描线, 漏 极电性连接于第 N级水平扫描线, 源极输入直流低电压; 第十九薄膜晶体 管, 其栅极电性连接第 N+2级水平扫描线, 漏极电性连接于该第 N级栅极 信号点, 源极输入直流低电压; 所述自举电容模块包括自举电容; 其中, 所述栅极驱动电路的第一级连接关系中, 第五薄膜晶体管的栅 极电性连接于电路启动信号; 第十二薄膜晶体管的栅极电性连接于电路启 动信号; 第十五薄膜晶体管的栅极和漏极均电性连接于电路启动信号; 所述栅极驱动电路的最后一级连接关系中, 第六薄膜晶体管的栅极电 性连接于电路启动信号; 第十三薄膜晶体管的栅极电性连接于电路启动信 号; 第十八薄膜晶体管的栅极电性连接于第二级水平扫描线; 第十九薄膜 晶体管的栅极电性连接于第二级水平扫描线;
其中, 所述第一高频时钟信号与第二高频时钟信号是两个相位完全相 反的高频时钟信号源; 所述第一低频时钟信号与第二低频时钟信号是两个 相位完全相反的低频信号源;
其中, 所述第一下拉模块中第十八薄膜晶体管的栅极与第十九薄膜晶 体管的栅极均电性连接第 N+2级水平扫描线, 主要为了实现第 N级栅极信 号点电位呈三个阶段, 第一阶段是上升至一个高电位并維持一段时间, 第 二阶段在第一阶段的基础上又上升一个高电位并維持一段时间, 第三阶段 在第二阶段的基础上下降到与第一阶段基本持平的高电位, 然后利用三个 阶段中的第三阶段进行阈值电压的自我补偿;
其中, 所述第 N级栅极信号点电位呈三个阶段, 其中第三阶段的变化 主要受第六薄膜晶体管或第十三晶体管的影响。
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106098003A (zh) * 2016-08-08 2016-11-09 武汉华星光电技术有限公司 Goa电路
US20190051262A1 (en) * 2017-06-07 2019-02-14 Shenzhen China Star Optoelectronics Technology Co., Ltd. Amoled pixel driving circuit and pixel driving method

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104332144B (zh) 2014-11-05 2017-04-12 深圳市华星光电技术有限公司 液晶显示面板及其栅极驱动电路
CN104392700B (zh) * 2014-11-07 2016-09-14 深圳市华星光电技术有限公司 用于氧化物半导体薄膜晶体管的扫描驱动电路
CN104409057B (zh) * 2014-11-14 2017-09-29 深圳市华星光电技术有限公司 一种扫描驱动电路
CN104464665B (zh) * 2014-12-08 2017-02-22 深圳市华星光电技术有限公司 一种扫描驱动电路
CN104505049B (zh) * 2014-12-31 2017-04-19 深圳市华星光电技术有限公司 一种栅极驱动电路
CN104575428B (zh) * 2015-01-23 2017-02-22 昆山龙腾光电有限公司 一种栅极驱动电路及使用其的显示装置
CN104732945B (zh) 2015-04-09 2017-06-30 京东方科技集团股份有限公司 移位寄存器及驱动方法、阵列基板栅极驱动装置、显示面板
CN104795034B (zh) * 2015-04-17 2018-01-30 深圳市华星光电技术有限公司 一种goa电路及液晶显示器
CN106297624B (zh) 2015-06-11 2020-03-17 南京瀚宇彩欣科技有限责任公司 移位寄存器和显示装置
CN105895018B (zh) * 2016-06-17 2018-09-28 京东方科技集团股份有限公司 基板及其制作方法、显示器件
CN106157914B (zh) * 2016-08-31 2019-05-03 深圳市华星光电技术有限公司 一种栅极驱动电路
CN106297704B (zh) * 2016-08-31 2019-06-11 深圳市华星光电技术有限公司 一种栅极驱动电路
CN106356015B (zh) * 2016-10-31 2020-05-12 合肥鑫晟光电科技有限公司 移位寄存器及驱动方法、显示装置
KR102261134B1 (ko) 2017-03-10 2021-06-07 엘지전자 주식회사 냉장고
CN107086028B (zh) * 2017-04-10 2018-11-20 深圳市华星光电半导体显示技术有限公司 液晶显示装置及其goa电路
CN107154244B (zh) * 2017-07-10 2019-08-02 深圳市华星光电技术有限公司 Goa电路及液晶显示装置
CN107564450B (zh) * 2017-09-14 2021-03-12 昆山龙腾光电股份有限公司 栅极驱动电路和显示装置
CN107799083B (zh) * 2017-11-17 2020-02-07 武汉华星光电技术有限公司 一种goa电路
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CN110660362B (zh) * 2018-06-28 2021-01-22 京东方科技集团股份有限公司 移位寄存器及栅极驱动电路
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CN111415689B (zh) * 2019-01-07 2024-10-15 长鑫存储技术有限公司 输出电路和芯片
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CN110335572B (zh) * 2019-06-27 2021-10-01 重庆惠科金渝光电科技有限公司 阵列基板行驱动电路单元与其驱动电路及液晶显示面板
CN110415662B (zh) 2019-07-18 2021-01-01 深圳市华星光电技术有限公司 Goa器件及栅极驱动电路
CN110459191B (zh) * 2019-08-26 2021-11-16 京东方科技集团股份有限公司 移位寄存器单元、栅极驱动电路和显示装置
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CN111710305B (zh) * 2020-06-09 2021-09-24 深圳市华星光电半导体显示技术有限公司 Goa电路及显示面板
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CN114421908B (zh) * 2022-03-28 2022-06-24 成都英思嘉半导体技术有限公司 用于光通信的低频补偿电路、模块、调制驱动器及芯片
CN115050338B (zh) * 2022-06-15 2023-07-25 Tcl华星光电技术有限公司 栅极驱动电路、显示面板及显示装置
CN114938205A (zh) * 2022-06-17 2022-08-23 广科知微(广东)传感科技有限公司 一种面向离子敏检测应用的基于tft的运算放大电路
CN115862511B (zh) * 2022-11-30 2024-04-12 Tcl华星光电技术有限公司 栅极驱动电路及显示面板
CN116229862B (zh) * 2022-12-30 2026-03-31 惠科股份有限公司 电路驱动方法及显示装置
CN116382010A (zh) * 2023-04-21 2023-07-04 上海天马微电子有限公司 一种液晶光栅及显示装置
CN117475950B (zh) * 2023-08-28 2026-01-13 Tcl华星光电技术有限公司 栅极驱动电路及显示面板
CN119541369A (zh) * 2024-12-10 2025-02-28 昆山龙腾光电股份有限公司 一种栅极驱动电路
CN120279861B (zh) * 2025-06-12 2025-08-08 惠科股份有限公司 降噪电路、栅极驱动电路和显示面板

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080101529A1 (en) * 2006-10-26 2008-05-01 Mitsubishi Electric Corporation Shift register and image display apparatus containing the same
CN103400601A (zh) * 2013-05-28 2013-11-20 友达光电股份有限公司 移位寄存器电路
CN103680453A (zh) * 2013-12-20 2014-03-26 深圳市华星光电技术有限公司 阵列基板行驱动电路
CN103730094A (zh) * 2013-12-30 2014-04-16 深圳市华星光电技术有限公司 Goa电路结构
CN103745700A (zh) * 2013-12-27 2014-04-23 深圳市华星光电技术有限公司 自修复型栅极驱动电路
CN103928007A (zh) * 2014-04-21 2014-07-16 深圳市华星光电技术有限公司 一种用于液晶显示的goa电路及液晶显示装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI342544B (en) * 2006-06-30 2011-05-21 Wintek Corp Shift register
US20100188385A1 (en) * 2007-07-24 2010-07-29 Koninklijke Philips Electronics N.V. Shift register circuit having threshold voltage compensation
TWI398852B (zh) * 2008-06-06 2013-06-11 Au Optronics Corp 可降低時脈偶合效應之移位暫存器及移位暫存器單元
JP5245678B2 (ja) * 2008-09-24 2013-07-24 カシオ計算機株式会社 信号シフト装置、シフトレジスタ、電子機器及び信号シフト装置の駆動方法
KR101520807B1 (ko) * 2009-01-05 2015-05-18 삼성디스플레이 주식회사 게이트 구동회로 및 이를 갖는 표시장치
CN101783124B (zh) * 2010-02-08 2013-05-08 北京大学深圳研究生院 栅极驱动电路单元、栅极驱动电路及显示装置
KR101170241B1 (ko) * 2010-06-03 2012-07-31 하이디스 테크놀로지 주식회사 Epd 및 디스플레이 장치의 구동회로
CN103778896B (zh) * 2014-01-20 2016-05-04 深圳市华星光电技术有限公司 集成栅极驱动电路及具有集成栅极驱动电路的显示面板
CN103928008B (zh) * 2014-04-24 2016-10-05 深圳市华星光电技术有限公司 一种用于液晶显示的goa电路及液晶显示装置
CN103928009B (zh) * 2014-04-29 2017-02-15 深圳市华星光电技术有限公司 用于窄边框液晶显示器的栅极驱动器
CN104078022B (zh) * 2014-07-17 2016-03-09 深圳市华星光电技术有限公司 具有自我补偿功能的栅极驱动电路

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080101529A1 (en) * 2006-10-26 2008-05-01 Mitsubishi Electric Corporation Shift register and image display apparatus containing the same
CN103400601A (zh) * 2013-05-28 2013-11-20 友达光电股份有限公司 移位寄存器电路
CN103680453A (zh) * 2013-12-20 2014-03-26 深圳市华星光电技术有限公司 阵列基板行驱动电路
CN103745700A (zh) * 2013-12-27 2014-04-23 深圳市华星光电技术有限公司 自修复型栅极驱动电路
CN103730094A (zh) * 2013-12-30 2014-04-16 深圳市华星光电技术有限公司 Goa电路结构
CN103928007A (zh) * 2014-04-21 2014-07-16 深圳市华星光电技术有限公司 一种用于液晶显示的goa电路及液晶显示装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106098003A (zh) * 2016-08-08 2016-11-09 武汉华星光电技术有限公司 Goa电路
CN106098003B (zh) * 2016-08-08 2019-01-22 武汉华星光电技术有限公司 Goa电路
US20190051262A1 (en) * 2017-06-07 2019-02-14 Shenzhen China Star Optoelectronics Technology Co., Ltd. Amoled pixel driving circuit and pixel driving method
US10629150B2 (en) * 2017-06-07 2020-04-21 Shenzhen China Star Optoelectronics Technology Co., Ltd. Amoled pixel driving circuit and pixel driving method

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