WO2016002336A1 - 異方導電性フィルム及び接続構造体 - Google Patents
異方導電性フィルム及び接続構造体 Download PDFInfo
- Publication number
- WO2016002336A1 WO2016002336A1 PCT/JP2015/063297 JP2015063297W WO2016002336A1 WO 2016002336 A1 WO2016002336 A1 WO 2016002336A1 JP 2015063297 W JP2015063297 W JP 2015063297W WO 2016002336 A1 WO2016002336 A1 WO 2016002336A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- conductive film
- anisotropic conductive
- conductive particles
- arrangement direction
- particles
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
- H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/10—Adhesives in the form of films or foils without carriers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
- H05K3/323—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/001—Conductive additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29344—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29347—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29355—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29357—Cobalt [Co] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/29364—Palladium [Pd] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29499—Shape or distribution of the fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8312—Aligning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83874—Ultraviolet [UV] curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/8388—Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83885—Combinations of two or more hardening methods provided for in at least two different groups from H01L2224/83855 - H01L2224/8388, e.g. for hybrid thermoplastic-thermosetting adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Definitions
- the present invention relates to an anisotropic conductive film, a connection method using the anisotropic conductive film, and a connection structure connected by the anisotropic conductive film.
- Anisotropic conductive films are widely used when electronic parts such as IC chips are mounted on a substrate.
- electronic parts such as IC chips are mounted on a substrate.
- insulating adhesives for anisotropic conductive films are used.
- a technique for evenly arranging conductive particles in a matrix in a layer is known.
- connection resistance varies even if the conductive particles are evenly arranged. This is because the conductive particles located on the edge of the terminal flow out into the space due to melting of the insulating adhesive and are not easily sandwiched between the upper and lower terminals.
- the conductive particles are arranged in a grid, the first arrangement direction of the conductive particles is the longitudinal direction of the anisotropic conductive film, and the second arrangement direction intersecting the first arrangement direction is It has been proposed to incline at 5 ° or more and 15 ° or less with respect to the direction orthogonal to the longitudinal direction of the anisotropic conductive film (Patent Document 1).
- an object of the present invention is to make it possible to easily inspect the dispersion state of conductive particles in an anisotropic conductive film even in an anisotropic conductive film in which conductive particles are dispersed at a high density.
- the inventor has a linear shape in which the conductive particles are not present in a plan view even when the conductive particles are dispersed in a lattice shape in the insulating adhesive layer or randomly.
- the line was observed, it was found that the dispersed state of the conductive particles could be easily inspected using the line, and the present invention was completed.
- the present invention is an anisotropic conductive film comprising an insulating adhesive layer and conductive particles dispersed in the insulating adhesive layer, Provided is an anisotropic conductive film in which straight lines (hereinafter referred to as vanishing lines) having no conductive particles in plan view exist at predetermined intervals.
- straight lines hereinafter referred to as vanishing lines
- the conductive particles are arranged in a lattice pattern by arranging them in the first arrangement direction and the second arrangement direction, and the vanishing lines are arranged in the first arrangement direction or Provided is an aspect that is inclined with respect to the second arrangement direction, and using the anisotropic conductive film of this aspect, the connection terminal of the first electronic component and the connection terminal of the second electronic component are anisotropically conductive.
- a connection method for connecting, wherein a direction substantially orthogonal to the first arrangement direction or the second arrangement direction of the anisotropic conductive film is aligned with the longitudinal direction of the connection terminals of the first electronic component or the second electronic component I will provide a.
- substantially orthogonal includes not only a direction strictly orthogonal to the first arrangement direction but also a range of deviation caused when an electronic component is mounted using an anisotropic conductive film. Usually, ⁇ 3 ° is included with respect to the direction orthogonal to the first arrangement direction.
- connection structure in which the connection terminals of the first electronic component and the connection terminals of the second electronic component are anisotropically conductively connected using the anisotropic conductive film described above.
- the anisotropic conductive film of the present invention since it has vanishing lines, the visual field can be scanned based on the vanishing lines when the anisotropic conductive film is inspected for alignment by visual inspection or image inspection. Therefore, it becomes easy to inspect the whole. In addition, by scanning the field of view with reference to the vanishing line, it becomes easy to specify the position of the occurrence of the defect. Therefore, it is easy to reduce the oversight of defects such as aggregation and missing of conductive particles in the anisotropic conductive film, and to maintain high quality of the anisotropic conductive film.
- the area occupied by the conductive particles in the field of view becomes sparse due to the disappearance line, it becomes easy to perform macroscopic observation. That is, even when the conductive particles are evenly dispersed, for example, by arranging them in a lattice pattern, the presence of vanishing lines makes it easy to grasp the conductive particles as a group of particles, so the regularity of forming the group is good. Can be easily grasped. Therefore, it is possible to reduce oversight of problems such as aggregation or loss of conductive particles, whether the number density of the conductive particles is low or high.
- the regularity of the region where the conductive particles do not exist can be known in advance, so that the state of trapping the conductive particles in the bumps can be determined. It becomes easy to grasp.
- FIG. 1 is a top view of anisotropic conductive film 1A of an example.
- FIG. 2 is a layout diagram of conductive particles in the anisotropic conductive film 1A of the example.
- FIG. 3 is a layout diagram of conductive particles in the anisotropic conductive film 1B of the example.
- FIG. 4 is a layout diagram of conductive particles in the anisotropic conductive film 1C of the example.
- FIG. 5 is a layout diagram of conductive particles in the anisotropic conductive film 1D of the example.
- FIG. 6A is an arrangement view of conductive particles in the anisotropic conductive film 1E of the example.
- FIG. 6B is a layout diagram of conductive particles in the anisotropic conductive film 1E ′ of the example.
- FIG. 7 is a layout diagram of conductive particles in the anisotropic conductive film 1F of the example.
- FIG. 8 is a layout diagram of conductive particles in the anisotropic conductive film 1G of
- FIG. 1 is a plan view of an anisotropic conductive film 1A according to an embodiment of the present invention
- FIG. 2 is an arrangement view of conductive particles in the anisotropic conductive film 1A.
- This anisotropic conductive film 1A has an insulating adhesive layer 2 and conductive particles 3 fixed to the insulating adhesive layer 2 in a grid-like arrangement. More specifically, this anisotropic conductive film 1A is obtained by slitting a long anisotropic conductive film in a strip shape, and the conductive particles 3 are in the longitudinal direction of the anisotropic conductive film 1A formed in a strip shape.
- D1 is arranged at a pitch P1 in the first arrangement direction L1 parallel to D1, and parallel to the width direction D2 of the anisotropic conductive film 1A perpendicular to the longitudinal direction D1 of the anisotropic conductive film 1A, that is, the first Arranged at a pitch P2 in a second arrangement direction L2 orthogonal to the arrangement direction L1, a four-way lattice is formed.
- vanishing lines L3 formed by the absence of the conductive particles 3 at lattice points on a line inclined with respect to the first arrangement direction L1 or the second arrangement direction L2 of the conductive particles 3. Is inclined at an inclination angle ⁇ with respect to the first arrangement direction L1, or at an inclination angle ⁇ with respect to the second arrangement direction L2.
- the vanishing lines L3 are preferably formed in parallel at a predetermined interval.
- the disappearance line L3 exists in the anisotropic conductive film 1A, when the alignment state of the conductive particles 3 of the anisotropic conductive film 1A is inspected by visual inspection or image inspection, as shown in FIG. It is possible to set the visual field 10 with the line L3 as a diagonal line and scan the visual field 10 so as to maintain a predetermined angle with the vanishing line L3 while examining the number and arrangement of the conductive particles 3 in the visual field 10. Therefore, it becomes easy to completely scan the entire surface of the anisotropic conductive film 1A in the visual field 10.
- the disappearance line L3 makes it easy to maintain high quality of the anisotropic conductive film 1A, shortens the time required for product inspection, and improves product productivity.
- the short direction of the connection terminal 4 is arranged along the longitudinal direction D1 of the anisotropic conductive film 1A.
- the inclination angle ⁇ of the vanishing line L3 For example, a glass substrate and a flexible printed wiring board for a television display
- the size of the connection surface of the connection terminal 4 is 8 to 200 ⁇ m in width and 1500 ⁇ m or less in length, as in the case of FOG (Film on ⁇ Glass) joining (FPC: Flexible Printed Circuits) ⁇ is preferably 15 to 75 °.
- the vanishing line passes through the diagonal of the unit cell 5 of the basic arrangement of the conductive particles 3 (that is, the arrangement when the vanishing line L3 is not present).
- the inclination angle ⁇ can be adjusted by the size of the pitch P1 in the first arrangement direction L1 of the conductive particles 3 and the pitch P2 in the second arrangement direction L2.
- the pitch P1 in the first arrangement direction L1 is set to be the same as that in the second arrangement direction L2 in that the inclination angle ⁇ is smaller than the angle ⁇ formed by the width direction L2 of the anisotropic conductive film 1A and the vanishing line L3. Make it longer than the pitch.
- the vanishing line passes through the diagonals of the two unit cells 5 connected in the first arrangement direction L1 as in the anisotropic conductive film 1C shown in FIG. L3 may be formed.
- the basic arrangement of the conductive particles 3 and the direction of the vanishing line L3 are not particularly limited.
- the second arrangement direction L2 may be inclined with respect to the first arrangement direction L1 of the conductive particles 3 like an anisotropic conductive film 1D shown in FIG.
- the angle ⁇ between the second arrangement direction L2 and the first arrangement direction L1 is preferably 15 to 75 °, more preferably 18 to 72 °, and still more preferably 20 to 70 °.
- the basic arrangement of the conductive particles 3 is a hexagonal lattice, and the disappearance is inclined with respect to the first arrangement direction L1.
- the line L3 may be provided.
- the arrangement direction as the basis of the conductive particles 3 can be any direction with respect to the longitudinal direction D1 of the anisotropic conductive film.
- FIG. 1 shows a case where rectangular connection terminals (bumps) are anisotropically conductively connected by the anisotropic conductive film 1D by inclining the second arrangement direction L2 with respect to the first arrangement direction L1.
- the connection terminal 4 when the longitudinal direction of the rectangular connection terminal 4 is aligned with the direction perpendicular to the first arrangement direction L1 (that is, when the short direction of the connection terminal 4 is aligned with the first arrangement direction L1), the connection terminal 4, the number of conductive particles that can flow into the insulating resin during anisotropic conductive connection and cannot contribute to the connection can be reduced. Therefore, the rectangular region used for the anisotropic conductive connection can be different. A sufficient number of conductive particles 3 contributing to conduction can be ensured wherever the film surface of the directionally conductive film 1A is taken.
- the vanishing line L3 may be formed in parallel with the first arrangement direction L1 of the conductive particles 3, and similarly, the second arrangement direction of the conductive particles 3 is used. You may form in parallel with L2. From the point of improving the trapping property of the conductive particles in the bumps and the point of facilitating confirmation of the supplemental state in the bumps of the conductive particles after the anisotropic conductive connection, the vanishing lines L3 are arranged in the first arrangement direction of the conductive particles 3.
- the vanishing line L3 is formed from the first arrangement direction L1 or the second arrangement in that the yield is improved by easy inspection during film production. It is preferable to be parallel to the arrangement direction L2.
- the vanishing line L3 may be observed as a line-shaped region in which the conductive particles 3 are not present in the randomly dispersed conductive particles 3. .
- the anisotropic conductive film of the present invention is not particularly limited with respect to the configuration of the conductive particles 3 itself, the layer configuration of the insulating adhesive layer 2 and the constituent resin, and can take various forms.
- the conductive particles 3 can be appropriately selected from those used for known anisotropic conductive films. Examples thereof include metal particles such as nickel, cobalt, silver, copper, gold, and palladium, and metal-coated resin particles. Two or more kinds can be used in combination.
- the particle diameter of the conductive particles 3 is preferably 1 to 50 ⁇ m, more preferably 1 to 20 ⁇ m, from the viewpoint of short circuit prevention and stability of interelectrode bonding.
- the pitch of the conductive particles 3 in the first arrangement direction L1 and the pitch in the second arrangement direction L2 are preferably 0.5 to 128 times the particle diameter of the conductive particles 3, respectively. It is preferably 0.8 to 64 times, more preferably 1.2 to 32 times. If these pitches are too short, short-circuiting is likely to occur when the terminals are connected using an anisotropic conductive film. Conversely, if the pitches are too long, the number of conductive particles captured between the terminals will be insufficient.
- the density of the conductive particles 3 is preferably 100 to 100,000 / mm 2 , more preferably 200 to 80,000 / mm 2 , particularly 300 to 50,000 / mm 2 . This particle density is appropriately adjusted according to the particle diameter and arrangement direction of the conductive particles 3.
- an insulating resin layer used in a known anisotropic conductive film can be appropriately employed.
- a cationic polymerization type resin layer, a thermal anion polymerization type resin layer containing an epoxy compound and a thermal anion polymerization initiator, or the like can be used.
- these resin layers can be polymerized as necessary.
- the insulating adhesive layer 2 may be formed from a plurality of resin layers.
- a mold having a dent corresponding to the arrangement of the conductive particles 3 is produced by a known method such as machining, laser processing, or photolithography.
- the conductive particles are put into a mold, and the composition for forming an insulating adhesive layer is filled on the mold, and cured to fix the conductive particles, and then removed from the mold.
- the mold may be made of a material having low rigidity.
- mold which has a dent corresponding to arrangement
- a member in which through holes are formed in a predetermined arrangement is provided on the insulating adhesive layer forming composition layer.
- the conductive particles 3 may be supplied and passed through the through holes.
- connection terminals of the first electronic component and the connection terminals of the second electronic component such as a flexible substrate and a glass substrate are anisotropically conductively connected, as shown in FIG. L1 or the second arrangement direction L2 is aligned with the longitudinal direction D1 of the anisotropic conductive film, and the direction substantially perpendicular to the first arrangement direction L1 or the second arrangement direction L2 is the first electronic component or the second electronic component.
- acquisition number of the electrically-conductive particle 3 in the connection terminal 4 can fully be raised.
- the confirmation of the arrangement of the conductive particles in the connection structure of the first electronic component and the second electronic component thus anisotropically connected can be easily performed using the vanishing line as a guide.
- the present invention also includes such a connection structure.
- Examples 1-6, Comparative Examples 1-3 As shown in Table 1, in Examples 1 to 6 and Comparative Examples 2 and 3, anisotropic conductive films having conductive particles arranged as shown in FIG. 2 (4-way lattice) or FIG. It produced using the electroconductive particle shown in 1 and resin. In this case, the pitch P1 in the first arrangement direction L1 and the pitch P2 in the second arrangement direction L2 of the conductive particles were set to the sizes shown in Table 1. In Comparative Example 1, the arrangement of the conductive particles was random.
- a mixed solution of an insulating resin containing a thermoplastic resin, a thermosetting resin, and a latent curing agent with the composition shown in Table 1 is prepared and applied to a PET film having a film thickness of 50 ⁇ m. And dried in an oven at 80 ° C. for 5 minutes to form an adhesive layer having a thickness of 20 ⁇ m on the PET film.
- the number coincidence rate is preferably B evaluation or more.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Manufacturing & Machinery (AREA)
- Non-Insulated Conductors (AREA)
Abstract
Description
平面視において導電粒子の存在しない直線状のライン(以下、消失線という)が所定間隔で存在する異方導電性フィルムを提供する。
図1は、本発明の一実施例の異方導電性フィルム1Aの平面図、図2は、その異方導電性フィルム1Aにおける導電粒子の配置図である。
例えば、導電粒子3としては、公知の異方導電性フィルムに用いられているものの中から適宜選択して使用することができる。例えば、ニッケル、コバルト、銀、銅、金、パラジウムなどの金属粒子、金属被覆樹脂粒子などが挙げられる。2種以上を併用することもできる。
実施例1~6、比較例1~3
表1に示すように、実施例1~6及び比較例2、3では、導電粒子が図2(4方向格子)又は図6A(6方格子)に示す配置の異方導電性フィルムを、表1に示す導電粒子と樹脂を使用して作製した。この場合、導電粒子の第1の配列方向L1のピッチP1と第2の配列方向L2のピッチP2を表1に示す大きさとした。
比較例1においては、導電粒子の配置をランダムとした。
なお、比較例1では導電粒子を、低沸点溶媒に分散し噴霧してランダムに同一平面上に配置した。
次の(a)~(e)の評価を行った。
(a)消失線の有無
各実施例及び比較例の異方導電性フィルムにおいて、任意の導電粒子を選択し、それを基点として第1の配列方向及び第2の配列方向にそれぞれ500×500μmの領域を設定し顕微鏡観察(倍率:100倍)により、所期の消失線上の格子点で導電粒子が欠落しているか否かを検査した。さらにこの領域が重複しない部分で、同様の検査を10回繰り返した。なお、観察領域の設定において、所定面積の領域を設定することに代えて、所定数の導電粒子が存在する領域(例えば、30個×30個)を設定してもよい。
(a)と同様にして各実施例及び比較例の異方導電性フィルムを観察し、2個以上の導電粒子が連結しているものが有るか否かを検査した。
この観察結果において、2個以上の導電粒子が連結して存在する部分の個数と、連結粒子が無い場合の設計粒子数との割合が5%以下のものを2個以上の連結粒子無し、それ以外のものを2個以上の連結粒子有りと評価した。その結果、比較例1では2個以上の連結粒子が有りと評価されたが、他は無しと評価された。なお、2個連結粒子の粒子数が、全粒子数の5%以下であれば実用上問題は無い。
消失線を含む500×500μmの領域に含まれる導電粒子の個数を、顕微鏡を用いた目視観察によりカウントした、次に、同じ領域に含まれる導電粒子の個数を、画像処理機(WinRoof:三谷商事社製)を用いてカウントし、次式により個数一致率を算出した。
個数一致率(%)=100-(│N1-N2│/N1)×100
(但し、N1:目視観察によりカウントした導電粒子の個数
N2:画像処理機によりカウントした導電粒子の個数)
A:個数一致率が97%以上
B:個数一致率が92%以上~97%未満
C:個数一致率が85%以上92%未満
D:個数一致率が85%未満
各実施例及び比較例の異方導電性フィルムを、初期導通および導通信頼性の評価用FPCとガラス基板の間に挟み、加熱加圧(180℃、3MPa、5秒)して各評価用接続物を得、この評価用接続物の導通抵抗を測定した。結果を表1に示す。
ここで、この評価用FPCとガラス基板は、それらの端子パターンが対応しており、サイズは次の通りである。
ポリイミド基材(厚み25μm)
配線仕様:Cu配線(高さ18μm)、Auメッキ
配線サイズ:幅25μm×長さ1000μm
ガラス材質:コーニング社製
外径:15×70mm
厚み:0.5mm
電極:ITO配線
初期導通抵抗の評価用FPCと各実施例及び比較例の異方導電性フィルムとの評価用接続物を温度85℃、湿度85%RHの恒温槽に500時間おいた後の導通抵抗を、初期導通抵抗と同様に測定した。結果を表1に示す。
なお、この導通抵抗が5Ω以上であると、接続した電子部品の実用的な導通安定性の点から好ましくない。
比較例1では、粒子がランダムに存在しているため、画像処理機がノイズと判定し、検出成功率が著しく低くなったと推察される。
2 絶縁接着剤層
3 導電粒子
4 接続端子
5 単位格子
10 視野
D1 異方導電性フィルムの長手方向
D2 異方導電性フィルムの幅方向
L1 第1の配列方向
L2 第2の配列方向
L3 消失線
P1 導電粒子の第1の配列方向のピッチ
P2 導電粒子の第2の配列方向のピッチ
α 傾斜角
β 傾斜角
γ 第1の配列方向L1と第2の配列方向L2がなす角
Claims (11)
- 絶縁接着剤層と、該絶縁接着剤層に分散した導電粒子を含む異方導電性フィルムであって、
平面視において導電粒子の存在しない直線状のライン(以下、消失線という)が所定間隔で存在する異方導電性フィルム。 - 導電粒子が、第1の配列方向と第2の配列方向に配列することにより格子状に配置され、消失線が、第1の配列方向又は第2の配列方向に対して傾斜している請求項1記載の異方導電性フィルム。
- 異方導電性フィルムが帯状に形成されており、その長手方向に対して斜めに消失線が形成されている請求項1又は2記載の異方導電性フィルム。
- 異方導電性フィルムの長手方向と消失線がなす角度が、異方導電性フィルムの幅方向と消失線のなす角度よりも小さい請求項3記載の異方導電性フィルム。
- 導電粒子の第1の配列方向が異方導電性フィルムの長手方向と平行である請求項2~4のいずれかに記載の異方導電性フィルム。
- 導電粒子の第1の配列方向と第2の配列方向が直交している請求項2~5のいずれかに記載の異方導電性フィルム。
- 導電粒子の第1の配列方向と第2の配列方向が斜めに交わっている請求項2~5のいずれかに記載の異方導電性フィルム。
- 導電粒子の密度が100~100000個/mm2である請求項1~7のいずれかに記載の異方導電性フィルム。
- 請求項2~8のいずれかに記載の異方導電性フィルムを用いて、第1電子部品の接続端子と第2電子部品の接続端子を異方導電性接続する接続方法であって、異方導電性フィルムの第1の配列方向又は第2の配列方向に略直交する方向を第1電子部品又は第2電子部品の接続端子の長手方向に合わせる接続方法。
- 接続端子の接続面の大きさが、幅8~200μm、長さ1500μm以下である請求項9記載の接続方法。
- 請求項1~8のいずれかに記載の異方導電性フィルムを用いて第1電子部品の接続端子と第2電子部品に接続端子が異方導電性接続されている接続構造体。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201580036022.6A CN106663885B (zh) | 2014-06-30 | 2015-05-08 | 各向异性导电膜和连接结构体 |
US15/316,649 US10121756B2 (en) | 2014-06-30 | 2015-05-08 | Anisotropic conductive film and connection structure |
KR1020167035431A KR102379812B1 (ko) | 2014-06-30 | 2015-05-08 | 이방 도전성 필름 및 접속 구조체 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014-135375 | 2014-06-30 | ||
JP2014135375A JP6331776B2 (ja) | 2014-06-30 | 2014-06-30 | 異方導電性フィルム及び接続構造体 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2016002336A1 true WO2016002336A1 (ja) | 2016-01-07 |
Family
ID=55018893
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2015/063297 WO2016002336A1 (ja) | 2014-06-30 | 2015-05-08 | 異方導電性フィルム及び接続構造体 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10121756B2 (ja) |
JP (1) | JP6331776B2 (ja) |
KR (1) | KR102379812B1 (ja) |
CN (1) | CN106663885B (ja) |
TW (1) | TWI659432B (ja) |
WO (1) | WO2016002336A1 (ja) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017191772A1 (ja) * | 2016-05-05 | 2017-11-09 | デクセリアルズ株式会社 | フィラー配置フィルム |
JP2017203156A (ja) * | 2016-05-05 | 2017-11-16 | デクセリアルズ株式会社 | フィラー配置フィルム |
WO2019039213A1 (ja) * | 2017-08-23 | 2019-02-28 | デクセリアルズ株式会社 | スペーサ含有テープ |
KR20190057090A (ko) * | 2016-11-04 | 2019-05-27 | 데쿠세리아루즈 가부시키가이샤 | 필러 함유 필름 |
KR20210046827A (ko) * | 2016-05-05 | 2021-04-28 | 데쿠세리아루즈 가부시키가이샤 | 이방성 도전 필름 |
JP2022107602A (ja) * | 2017-08-23 | 2022-07-22 | デクセリアルズ株式会社 | スペーサ含有テープ |
US11794444B2 (en) | 2016-05-05 | 2023-10-24 | Dexerials Corporation | Anisotropic conductive film |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7274810B2 (ja) * | 2016-05-05 | 2023-05-17 | デクセリアルズ株式会社 | 異方性導電フィルム |
WO2017191779A1 (ja) * | 2016-05-05 | 2017-11-09 | デクセリアルズ株式会社 | 異方性導電フィルム |
US20170338204A1 (en) * | 2016-05-17 | 2017-11-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Device and Method for UBM/RDL Routing |
KR102519126B1 (ko) * | 2018-03-30 | 2023-04-06 | 삼성디스플레이 주식회사 | 표시 장치 |
CN112534650B (zh) * | 2018-08-08 | 2023-05-23 | 迪睿合株式会社 | 各向异性导电薄膜 |
JP6784283B2 (ja) | 2018-09-19 | 2020-11-11 | Tdk株式会社 | 角度センサシステム |
CN110660043A (zh) * | 2019-08-26 | 2020-01-07 | 苏州感知线智能科技有限公司 | 异方性导电膜绑定后导电粒子数目的快速检测方法及装置 |
KR20220016364A (ko) | 2020-07-30 | 2022-02-09 | 삼성디스플레이 주식회사 | 전자장치 |
JP2023117329A (ja) * | 2022-02-10 | 2023-08-23 | デクセリアルズ株式会社 | 導電フィルムの設計方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0582199A (ja) * | 1991-05-28 | 1993-04-02 | Minato Electron Kk | 異方導電性コネクタを有するコネクタ配置構造および異方導電性コネクタ |
JPH09320345A (ja) * | 1996-05-31 | 1997-12-12 | Whitaker Corp:The | 異方導電性フィルム |
JP2007080522A (ja) * | 2005-09-09 | 2007-03-29 | Sumitomo Bakelite Co Ltd | 異方導電性フィルムおよび電子・電機機器 |
JP2014074139A (ja) * | 2012-10-05 | 2014-04-24 | Dexerials Corp | 回路接続材料及びその製造方法、並びにそれを用いた実装体の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3582654B2 (ja) * | 2002-10-04 | 2004-10-27 | 日立化成工業株式会社 | 接続部材 |
US7408263B2 (en) * | 2005-05-03 | 2008-08-05 | E.I. Du Pont De Nemours And Company | Anisotropic conductive coatings and electronic devices |
US8802214B2 (en) * | 2005-06-13 | 2014-08-12 | Trillion Science, Inc. | Non-random array anisotropic conductive film (ACF) and manufacturing processes |
JP5154834B2 (ja) * | 2007-05-07 | 2013-02-27 | デクセリアルズ株式会社 | 異方導電性接着剤フィルム及び異方導電性接着剤フィルムの製造方法 |
JP2011252935A (ja) * | 2008-09-26 | 2011-12-15 | Sharp Corp | 回路基板及び表示装置 |
JP2010129960A (ja) | 2008-12-01 | 2010-06-10 | Sony Chemical & Information Device Corp | 接続フィルム、並びに、接合体及びその製造方法 |
-
2014
- 2014-06-30 JP JP2014135375A patent/JP6331776B2/ja active Active
-
2015
- 2015-05-08 CN CN201580036022.6A patent/CN106663885B/zh active Active
- 2015-05-08 WO PCT/JP2015/063297 patent/WO2016002336A1/ja active Application Filing
- 2015-05-08 US US15/316,649 patent/US10121756B2/en active Active
- 2015-05-08 KR KR1020167035431A patent/KR102379812B1/ko active IP Right Grant
- 2015-06-29 TW TW104120910A patent/TWI659432B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0582199A (ja) * | 1991-05-28 | 1993-04-02 | Minato Electron Kk | 異方導電性コネクタを有するコネクタ配置構造および異方導電性コネクタ |
JPH09320345A (ja) * | 1996-05-31 | 1997-12-12 | Whitaker Corp:The | 異方導電性フィルム |
JP2007080522A (ja) * | 2005-09-09 | 2007-03-29 | Sumitomo Bakelite Co Ltd | 異方導電性フィルムおよび電子・電機機器 |
JP2014074139A (ja) * | 2012-10-05 | 2014-04-24 | Dexerials Corp | 回路接続材料及びその製造方法、並びにそれを用いた実装体の製造方法 |
Cited By (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11732105B2 (en) | 2016-05-05 | 2023-08-22 | Dexerials Corporation | Filler disposition film |
JP2022111114A (ja) * | 2016-05-05 | 2022-07-29 | デクセリアルズ株式会社 | フィラー配置フィルム |
KR20180107207A (ko) * | 2016-05-05 | 2018-10-01 | 데쿠세리아루즈 가부시키가이샤 | 필러 배치 필름 |
CN109071846A (zh) * | 2016-05-05 | 2018-12-21 | 迪睿合株式会社 | 填充剂配置膜 |
KR102682993B1 (ko) * | 2016-05-05 | 2024-07-08 | 데쿠세리아루즈 가부시키가이샤 | 이방성 도전 필름 |
US11794444B2 (en) | 2016-05-05 | 2023-10-24 | Dexerials Corporation | Anisotropic conductive film |
JP2017203156A (ja) * | 2016-05-05 | 2017-11-16 | デクセリアルズ株式会社 | フィラー配置フィルム |
KR20210046827A (ko) * | 2016-05-05 | 2021-04-28 | 데쿠세리아루즈 가부시키가이샤 | 이방성 도전 필름 |
KR20210074417A (ko) * | 2016-05-05 | 2021-06-21 | 데쿠세리아루즈 가부시키가이샤 | 필러 배치 필름 |
KR102266471B1 (ko) * | 2016-05-05 | 2021-06-17 | 데쿠세리아루즈 가부시키가이샤 | 필러 배치 필름 |
JP7303466B2 (ja) | 2016-05-05 | 2023-07-05 | デクセリアルズ株式会社 | フィラー配置フィルム |
KR102514831B1 (ko) * | 2016-05-05 | 2023-03-29 | 데쿠세리아루즈 가부시키가이샤 | 필러 배치 필름 |
WO2017191772A1 (ja) * | 2016-05-05 | 2017-11-09 | デクセリアルズ株式会社 | フィラー配置フィルム |
JP7119288B2 (ja) | 2016-05-05 | 2022-08-17 | デクセリアルズ株式会社 | フィラー配置フィルム |
KR20220021011A (ko) * | 2016-11-04 | 2022-02-21 | 데쿠세리아루즈 가부시키가이샤 | 필러 함유 필름 |
KR102513747B1 (ko) * | 2016-11-04 | 2023-03-24 | 데쿠세리아루즈 가부시키가이샤 | 필러 함유 필름 |
KR102359094B1 (ko) * | 2016-11-04 | 2022-02-08 | 데쿠세리아루즈 가부시키가이샤 | 필러 함유 필름 |
US11001686B2 (en) | 2016-11-04 | 2021-05-11 | Dexerials Corporation | Filler-containing film |
KR20190057090A (ko) * | 2016-11-04 | 2019-05-27 | 데쿠세리아루즈 가부시키가이샤 | 필러 함유 필름 |
JP2022107602A (ja) * | 2017-08-23 | 2022-07-22 | デクセリアルズ株式会社 | スペーサ含有テープ |
JP7066998B2 (ja) | 2017-08-23 | 2022-05-16 | デクセリアルズ株式会社 | スペーサ含有テープ |
US11327368B2 (en) | 2017-08-23 | 2022-05-10 | Dexerials Corporation | Spacer-containing tape |
JP7260829B2 (ja) | 2017-08-23 | 2023-04-19 | デクセリアルズ株式会社 | スペーサ含有テープ |
JP2019039994A (ja) * | 2017-08-23 | 2019-03-14 | デクセリアルズ株式会社 | スペーサ含有テープ |
US11796865B2 (en) | 2017-08-23 | 2023-10-24 | Dexerials Corporation | Spacer-containing tape |
WO2019039213A1 (ja) * | 2017-08-23 | 2019-02-28 | デクセリアルズ株式会社 | スペーサ含有テープ |
Also Published As
Publication number | Publication date |
---|---|
CN106663885A (zh) | 2017-05-10 |
TWI659432B (zh) | 2019-05-11 |
TW201606800A (zh) | 2016-02-16 |
JP2016015205A (ja) | 2016-01-28 |
KR20170020360A (ko) | 2017-02-22 |
KR102379812B1 (ko) | 2022-03-30 |
US10121756B2 (en) | 2018-11-06 |
JP6331776B2 (ja) | 2018-05-30 |
US20170162529A1 (en) | 2017-06-08 |
CN106663885B (zh) | 2019-04-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6331776B2 (ja) | 異方導電性フィルム及び接続構造体 | |
JP6932110B2 (ja) | 異方導電性フィルム及び接続構造体 | |
US10546831B2 (en) | Anisotropic electrically conductive film and connection structure | |
KR101929697B1 (ko) | 이방 도전성 필름 및 접속 구조체 | |
US10975267B2 (en) | Anisotropic conductive film and connection structure | |
CN110499119B (zh) | 各向异性导电性膜及连接构造体 | |
TWI786440B (zh) | 多層基板、及多層基板之製造方法 | |
TW201635313A (zh) | 異向導電性膜及連接構造體 | |
TWI671954B (zh) | 異向導電性膜及連接結構體 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15815643 Country of ref document: EP Kind code of ref document: A1 |
|
DPE1 | Request for preliminary examination filed after expiration of 19th month from priority date (pct application filed from 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 15316649 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 20167035431 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 15815643 Country of ref document: EP Kind code of ref document: A1 |