TW201635313A - 異向導電性膜及連接構造體 - Google Patents

異向導電性膜及連接構造體 Download PDF

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TW201635313A
TW201635313A TW104135392A TW104135392A TW201635313A TW 201635313 A TW201635313 A TW 201635313A TW 104135392 A TW104135392 A TW 104135392A TW 104135392 A TW104135392 A TW 104135392A TW 201635313 A TW201635313 A TW 201635313A
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conductive particles
conductive
conductive film
anisotropic
anisotropic conductive
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TW104135392A
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TWI699788B (zh
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Yasushi Akutsu
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Dexerials Corp
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    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
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Abstract

本發明之異向導電性膜1A含有絕緣接著劑層10、及格子狀地配置於該絕緣接著劑層之導電粒子P，且關於基準導電粒子P0、最靠近基準導電粒子P0之第1導電粒子P1、與第1導電粒子P1同等或繼第1導電粒子P1之後靠近基準導電粒子P0且不在包含基準導電粒子P0與第1導電粒子P1之格子軸上之第2導電粒子，基準導電粒子P0於異向導電性膜之長邊方向之投影像q1與第1導電粒子P1或第2導電粒子P2重疊，基準導電粒子P0於異向導電性膜之短邊方向之投影像q2與第2導電粒子P2或第1導電粒子P1重疊。該等重疊寬度W1、寬度W2之至少一者未達導電粒子P粒徑D之1倍。藉此，即便於微間距之FOG連接或COG連接中，亦可使用異向導電性膜而獲得穩定之連接可靠性。

Description

異向導電性膜及連接構造體
本發明係關於一種異向導電性膜、使用異向導電性膜之連接方法、及經異向導電性膜連接而成之連接構造體。
異向導電性膜廣泛應用於將IC晶片等電子零件構裝於基板時。近年來，於行動電話、筆記型電腦等小型電子機器中要求配線之高密度化，作為使異向導電性膜應對該高密度化之方法，已知有將導電粒子格子狀地均等配置於異向導電性膜之絕緣接著劑層之技術。
然而，即便將導電粒子均等配置，亦存在導通電阻不均之問題。其原因在於，位於端子之邊緣上之導電粒子因絕緣性黏合劑之熔融而流向間隙，難以夾持於上下之端子間。對於該問題，提出有將導電粒子之第1排列方向設為異向導電性膜之長邊方向，並使與第1排列方向交叉之第2排列方向相對於與異向導電性膜之長邊方向正交之方向以5°以上且15°以下傾斜(專利文獻1)。
專利文獻1：日本專利第4887700號公報
然而，若由異向導電性膜連接之電子零件之凸塊尺寸進一步減小，則可被凸塊捕捉到之導電粒子之數量亦進一步減少，而存在專利文獻1所記載之於異向導電性膜無法充分地獲得導通可靠性之情形。尤其於將液晶畫面等之控制用IC連接於玻璃基板上之透明電極即所謂COG(Chip On Glass，覆晶玻璃)連接中，因液晶畫面之高精細化所伴隨之多端子化與IC晶片之小型化而導致凸塊尺寸減小，又，於進行將電視之顯示器用之玻璃基板與可撓性印刷配線板(FCP：Flexible Printed Circuits)接合之FOG(Film on Glass，鍍膜玻璃)連接之情形時，連接端子亦會形成微間距，而存在增加可被連接端子捕捉到之導電粒子數而提高導通可靠性之課題。
因此，本發明之課題在於不僅於習知之FOG連接或COG連接中，即便於微間距之FOG連接或COG連接中，亦可使用異向導電性膜而獲得穩定之導通可靠性。
本發明人發現，於將導電粒子配置為格子狀而成之異向導電性膜中，為了高密度地配置導電粒子且於異向導電性連接時不會引起短路，而針對設為基準之任意之導電粒子(以下，稱為基準導電粒子)、與最靠近基準導電粒子之第1導電粒子或其次靠近之第2導電粒子，藉由使基準導電粒子於異向導電性膜之長邊方向及短邊方向之投影像與第1導電粒子或第2導電粒子重疊，且將其等之重疊寬度設為特定之範圍，可提高異向導電性膜之連接可靠性，從而想到本發明。
即，本發明提供一種異向導電性膜，其含有絕緣接著劑層、及格子狀地配置於該絕緣接著劑層之導電粒子，且 關於基準導電粒子、最靠近基準導電粒子之第1導電粒子、及第2導電粒子，基準導電粒子於異向導電性膜之長邊方向之投影像與第1導電粒子或第2導電粒子重疊，基準導電粒子於異向導電性膜之短邊方向之投影像與第2導電粒子或第1導電粒子重疊，基準導電粒子於異向導電性膜之長邊方向之投影像與第1導電粒子或第2導電粒子之重疊區域於異向導電性膜之短邊方向之最大寬度(以下，稱為於異向導電性膜之長邊方向上相鄰之導電粒子之重疊寬度)、及基準導電粒子於異向導電性膜之短邊方向之投影像與第2導電粒子或第1導電粒子之重疊區域於異向導電性膜之長邊方向之最大寬度(以下，稱為於異向導電性膜之短邊方向上相鄰之導電粒子之重疊寬度)之至少一者未達導電粒子之粒徑之1倍；又，上述第2導電粒子係：與第1導電粒子同等或繼第1導電粒子之後靠近基準導電粒子並且不在包含基準導電粒子與第1導電粒子之格子軸上。
又，本發明提供一種連接構造體，其係利用上述異向導電性膜將第1電子零件與第2電子零件進行異向導電性連接而成。
根據本發明之異向導電性膜，藉由將導電粒子高密度地配置於絕緣接著劑層，而即便進行異向導電性連接之端子其面積較窄，亦可將導電粒子準確地捕捉至該端子，且即便端子形成為微間距，亦可抑制因導 電粒子所產生之短路。
1A、1B、1C、1D、1x、1y‧‧‧異向導電性膜
3‧‧‧端子或連接端子
10‧‧‧絕緣接著劑層
A1‧‧‧第1排列軸
A2‧‧‧第2排列軸
F1‧‧‧異向導電性膜之長邊方向
F2‧‧‧異向導電性膜之短邊方向
L1‧‧‧基準導電粒子與第1導電粒子之中心間距
L2‧‧‧基準導電粒子與第2導電粒子之中心間距
P‧‧‧導電粒子
P0‧‧‧基準導電粒子
P1‧‧‧第1導電粒子
P2‧‧‧第2導電粒子
q1‧‧‧基準導電粒子於異向導電性膜之長邊方向之投影像
q2‧‧‧基準導電粒子於異向導電性膜之短邊方向之投影像
W1‧‧‧於異向導電性膜之長邊方向上相鄰之導電粒子之重疊寬度
W2‧‧‧於異向導電性膜之短邊方向上相鄰之導電粒子之重疊寬度
圖1係實施例之異向導電性膜1A中之導電粒子之配置圖。
圖2係實施例之異向導電性膜1B中之導電粒子之配置圖。
圖3係實施例之異向導電性膜1C中之導電粒子之配置圖。
圖4係實施例之異向導電性膜1D中之導電粒子之配置圖。
圖5係比較例之異向導電性膜1x中之導電粒子之配置圖。
圖6係比較例之異向導電性膜1y中之導電粒子之配置圖。
以下，一面參照圖式，一面對本發明詳細地進行說明。再者，各圖中，相同符號表示相同或同等之構成要素。
圖1係本發明之一實施例之異向導電性膜1A中之導電粒子P之配置圖。該異向導電性膜1A具有絕緣接著劑層10、及以格子狀之配置固定於絕緣接著劑層10之導電粒子P。
更具體而言，導電粒子P以正方格子或長方格子配置於絕緣接著劑層10內，包含基準導電粒子P0與最靠近該基準導電粒子P0之第1導電粒子P1之格子軸(以下，稱為第1排列軸A1)相對於異向導電性膜1A之長邊方向F1及短邊方向F2傾斜。此處，基準導電粒子P0與第1導電粒子P1之中心間距為L1。
又，包含與第1導電粒子P1同等或繼第1導電粒子P1之後靠近基準導電粒子P0且不在第1排列軸A1上之第2導電粒子P2與基準導電粒子P0之格子軸(以下，稱為第2排列軸A2)亦相對於異向導電性膜1A之長邊方向F1及短邊方向F2傾斜。此處，若將基準導電粒子P0與第2導電粒子P2之中心間距設為L2，則L2≧L1。
基準導電粒子P0與第1導電粒子P1之中心間距L1、及基準導電粒子P0與第2導電粒子P2之中心間距L2可根據應用異向導電性膜之FOG連接或COG連接等而適當決定，通常分別為導電粒子P之粒徑D之1.5~2000倍，於FOG連接之情形時，較佳為2.5~1000倍，更佳為3~700倍，尤佳為大於5倍且未達400倍。於COG連接之情形時，較佳為1.5~5倍，更佳為1.8~4.5倍，尤佳為2~4倍。藉由如上所述般以高密度配置有導電粒子P，而即便使用異向導電性膜1A進行異向導電性連接之端子其面積較窄，亦可將導電粒子P準確地捕捉至該端子，從而獲得導通可靠性。相對於此，若中心間距L1、L2過短，則於使用異向導電性膜連接端子間之情形時容易產生短路，相反若過長，則端子間所捕捉到之導電粒子數不足。
於該異向導電性膜1A中，基準導電粒子P0於異向導電性膜之長邊方向之投影像q1(即利用異向導電性膜1A之長邊方向F1之平行光對基準導電粒子P0進行投影之情形時之像)與第1導電粒子P1重疊，且基準導電粒子P0於異向導電性膜之短邊方向F2之投影像q2(即利用異向導電性膜1A之短邊方向F2之平行光對基準導電粒子P0進行投影之情形時之像)與第2導電粒子P2重疊。進而，於異向導電性膜1A之長邊方向 F1上相鄰之基準導電粒子P0與第1導電粒子P1之重疊寬度W1、及於異向導電性膜1A之短邊方向F2上相鄰之基準導電粒子P0與第2導電粒子P2之重疊寬度W2分別大於導電粒子P之粒徑D之0倍且未達1倍，較佳為未達0.5倍。
再者，於本發明中，導電粒子P之粒徑D係異向導電性膜所使用之導電粒子之平均粒徑。就防止短路、欲連接之端子間接合之穩定性方面而言，導電粒子P之粒徑D較佳為1~30μm，更佳為2~15μm。再者，導電粒子之粒徑D與粒子中心間距之範圍密切相關，例如於一般之FPC配線之情形時，若連接區域長度通常為2mm且於一個排列軸上具有導電粒子直徑0.5倍之多餘空間而捕捉到粒徑1μm之2個導電粒子，則可算出粒子中心間距之上限為粒徑之1998倍(於此情形時，與和該排列軸相鄰之排列軸之距離變得極短)。於粒徑為2μm及3μm之FOG連接之情形時，根據與上述相同之理由，亦可算出粒子中心間距之上限分別為粒徑之998倍及663.7μm(亦為可包含於2mm內存在3個1μm之導電粒子之情形的範圍)。又，針對一般之FPC配線，於將其寬度設為200μm且設為L/S=1之情形時，若使於配線寬度與其間隙之合計之400μm內，於一個排列軸上最小徑1μm之2個導電粒子能具有導電粒子直徑0.5倍之多餘空間且存在於較配線之端部更靠內側，則可算出粒子中心間距之上限未達粒徑之398倍。又，於導電粒子之粒徑D為30μm之情形時，粒子中心間距之下限相當於可具有多餘空間而配置之間隔。
於該異向導電性膜1A中，如上所述，於長邊方向F1相鄰的基準導電粒子P0與第1導電粒子P1之重疊寬度W1、及於異向導電性膜 1A之短邊方向F2相鄰的基準導電粒子P0與第2導電粒子P2之重疊寬度W2之兩者均未達導電粒子P之粒徑D之1倍，但於本發明中，該等重疊寬度W1、W2之至少一者未達導電粒子P之粒徑D之1倍即可。換言之，不存在重疊寬度W1、W2之兩者同時與導電粒子P之粒徑D相等之情況。即，不存在基準導電粒子P0之投影像q1與第1導電粒子P1或第2導電粒子P2恰好重疊且基準導電粒子P0之投影像q2與第2導電粒子P2或第1導電粒子P1恰好重疊之情況。
藉由以如上方式調整重疊寬度W1、W2，而即便以高密度配置有導電粒子P，於使用異向導電性膜1A將端子異向導電性連接之情形時，亦可抑制端子間產生短路。又，即便於高密度地配置之狀態下亦可藉由刻意錯開，藉此即便於製造異向導電性膜時產生不良情況亦容易地檢測出。例如，於任意部位之面視野影像中劃出膜之長邊或短邊或者預先設計於該等之偏斜角度之直線(輔助線)，藉此可容易地確認排列軸是否與最初之設計一致地形成。
可認為該短路產生之抑制效果可藉由導電粒子P與絕緣接著劑層10之如下般之作用機制而獲得。即，於使用異向導電性膜1A將電子零件之連接端子3異向導電性連接之情形時，例如如圖1所示，若使異向導電性膜1A之長邊方向F1與連接端子3之短邊方向一致，並利用覆蓋連接端子3之加熱頭進行加熱加壓，則絕緣接著劑層10熔融，該熔融之樹脂沿箭頭X方向流動，因熔融之樹脂之流動而連接端子3間之導電粒子P亦向箭頭X方向移動。此處，若如圖5所示之比較例之異向導電性膜1x般重疊寬度W1及W2之兩者均與導電粒子P之粒徑D相等，則於異向導電 性連接時，連接端子3間之導電粒子P於箭頭X方向及與其正交之方向均排列成一排，且因熔融之樹脂之流動而導電粒子P容易以3個以上之多個連結。因此，於連接微間距之連接端子之情形時，容易引起短路。
相對於此，於該異向導電性膜1A中，如圖1所示，於X方向相鄰之導電粒子P3、P1、P4於異向導電性膜1A之長邊方向F1之位置錯開，因此熔融之樹脂之流動錯亂而可防止熔融之樹脂流過後3個以上之導電粒子連結，且即便為微間距之連接端子亦可在不產生短路之情況下進行連接。即，可使膜之熔融黏度之設計留有餘裕。例如，若為了使導電粒子高密度地存在且抑制導電粒子之流動而將熔融黏度設計為相對較高，則會產生妨礙壓入之顧慮。然而，藉由以上述方式進行設計，容易避免此種問題。又，即便於調配設計之階段亦容易掌握流動狀態之舉動，因此亦可有助於削減設計工時。
於該微間距之連接中，於包含相互連接之對向連接端子之連接端子排列方向上，可將隔開間隙而相鄰之最小端子間距離(該距離亦可於可進行異向導電性連接之範圍內沿排列方向有所差異)設為未達導電粒子之粒徑D之4倍。於此情形時，可將連接之端子其連接面之短邊方向之寬度設為未達導電粒子之粒徑D之7倍。
又，於如圖6所示之比較例之異向導電性膜1y般最靠近基準導電粒子P0之第1導電粒子P1未與基準導電粒子P0於異向導電性膜之長邊方向F1之投影像q1重疊，亦未與短邊方向F2之投影像q2重疊，而是較第1導電粒子P1更遠離基準導電粒子P0之導電粒子Px、Py與基準導電粒子P0之投影像q1、q2重疊，此情形時，由於導電粒子P之密度降低， 故而難以產生短路。然而，由於導電粒子P之密度較低，故而於需要連接之端子之尺寸較小之情形時，導電粒子P難以被端子3捕捉到而導通可靠性較差。一般而言，如該圖所示，於IC晶片等中有多個連接端子3並列，且異向導電性膜對連接端子之貼合係沿連接端子3之排列方向進行，但若該貼合產生偏差或彎曲，則於連接端子3上稀疏地配置之導電粒子P更難被連接端子捕捉到。
相對於此，本發明之異向導電性膜1A可提高導通可靠性。
本發明之異向導電性膜可對導電粒子之配置採用各種態樣。例如，於上述異向導電性膜1A中，亦可使基準導電粒子P0於異向導電性膜1A之長邊方向F1之投影像q1與第2導電粒子重疊，且基準導電粒子P0於異向導電性膜1A之短邊方向F2之投影像q2與第1導電粒子重疊。
又，亦可如圖2所示之異向導電性膜1B般，於上述異向導電性膜1A中將導電粒子P之配置設為斜方格子，進而使於異向導電性膜之短邊方向F2相鄰的基準導電粒子P0與第2導電粒子P2之重疊寬度W2與導電粒子P之粒徑D相等。於此情形時，於異向導電性膜1B之長邊方向F1相鄰的基準導電粒子P0與第1導電粒子P1之重疊寬度W1設為未達導電粒子P之粒徑D之1倍，較佳為設為未達0.5倍。於該態樣中，較佳為基準導電粒子P0於異向導電性膜之長邊方向F1之外切線不與第1導電粒子P1於異向導電性膜之長邊方向F1之外切線重疊。即，較佳為基準導電粒子P0於異向導電性膜之長邊方向F1之外切線貫穿第1導電粒子P1。
亦可如圖3所示之異向導電性膜1C般，於上述異向導電性膜1A中將導電粒子P之配置設為斜方格子，進而使於異向導電性膜之長邊 方向F1相鄰的基準導電粒子P0與第1導電粒子P1之重疊寬度W1與導電粒子P之粒徑D相等。於此情形時，於異向導電性膜1C之短邊方向F2相鄰的基準導電粒子P0與第2導電粒子P2之重疊寬度W2設為未達導電粒子P之粒徑D之1倍，較佳為設為未達0.5倍。於該態樣中，較佳為基準導電粒子P0於異向導電性膜之短邊方向F2之外切線不與第2導電粒子P2於異向導電性膜之短邊方向F2之外切線重疊。即，較佳為基準導電粒子P0於異向導電性膜之短邊方向F2之外切線貫穿第2導電粒子P2。
若如該異向導電性膜1C般於異向導電性膜之長邊方向F1將導電粒子P排列成一行，且使於異向導電性膜之短邊方向F2相鄰之導電粒子P以未達導電粒子P之粒徑D之1倍之重疊寬度W2錯開，則導電粒子P被配置為向樹脂之流動方向即X方向傾斜，故而可容易地掌握連接端子3所捕捉到之導電粒子及因樹脂流動而移動之導電粒子。又，由於流動方向上之導電粒子P之重疊減小，故而可尤其抑制短路之產生。
再者，顧及到連接時之樹脂之流動而以如上方式設計導電粒子P之配置，藉此，可增加形成絕緣接著劑層10之絕緣性黏合劑之調配自由度，從而容易應對異向導電性膜之製作條件或連接條件等之變更。
亦可如圖4所示之異向導電性膜1D般，於上述異向導電性膜1A中將導電粒子P之配置設為斜方格子。
於本發明中，導電粒子P之密度較佳為400~250000個/mm2，更佳為800~200000個/mm2，進而較佳為1200~100000個/mm2。該粒子密度係根據導電粒子P之粒徑D與配置位置而適當調整。
對於導電粒子P本身之構成或絕緣接著劑層10之層構成或 構成樹脂，可採用各種態樣。
即，導電粒子P可自公知之異向導電性膜所使用者中適當選擇而使用。例如可列舉：鎳、鈷、銀、銅、金、鈀等金屬粒子、金屬被覆樹脂粒子等。亦可將2種以上併用。
作為絕緣接著劑層10，可適當採用公知之異向導電性膜所使用之絕緣性樹脂層。例如可使用：含丙烯酸酯化合物與光自由基聚合起始劑之光自由基聚合型樹脂層、含丙烯酸酯化合物與熱自由基聚合起始劑之熱自由基聚合型樹脂層、含環氧化合物與熱陽離子聚合起始劑之熱陽離子聚合型樹脂層、含環氧化合物與熱陰離子聚合起始劑之熱陰離子聚合型樹脂層等。該等樹脂層係視需要將導電粒子P固定於絕緣接著劑層10，故而可視為分別聚合而成者。亦可由多層樹脂層形成絕緣接著劑層10。
又，為了將導電粒子P固定於絕緣接著劑層10，視需要亦可於絕緣接著劑層10中調配二氧化矽等絕緣性填料。
作為以上述配置將導電粒子P固定於絕緣接著劑層10之方法，利用機械加工或雷射加工、光微影術等公知之方法製作具有與導電粒子P之配置對應之凹部之模具，向該模具中裝入導電粒子，並於導電粒子上填充絕緣接著劑層形成用組成物，使該組成物硬化並自模具取出即可。由於為此種模具，因此可利用剛性更低之材質製作模具。
又，為了將導電粒子P於絕緣接著劑層10上如上述般配置，亦可為於絕緣接著劑層形成組成物層上設置以特定之配置形成有貫通孔之構件，並自其上方供給導電粒子P且使之通過貫通孔等的方法。
於使用本發明之異向導電性膜將可撓性基板(FPC)、玻璃 基板、塑膠基板(由PET等熱塑性樹脂構成之基板)、陶瓷基板等第1電子零件之連接端子與IC晶片、IC模組、可撓性基板(FPC)等第2電子零件之連接端子進行異向導電性連接之情形時，例如如圖1所示，使異向導電性膜1A之長邊方向F1與第1電子零件或第2電子零件之連接端子3之短邊方向一致。藉此，可利用本發明之異向導電性膜1A中之導電粒子P之配置而充分地提高連接端子3之導電粒子P之捕捉數，尤其於導電粒子P之第1排列軸A1或第2排列軸A2之至少一者相對於異向導電性膜之長邊方向F1或短邊方向F2傾斜之情形時，可顯著地提高連接端子3之導電粒子P之捕捉性。
更具體而言，例如當使用“於透明電極形成有連接端子之玻璃基板”等作為第1電子零件、且使用IC晶片等作為第2電子零件而進行高密度配線之COG連接之情形時，更具體而言，於該等連接端子之連接面之大小為寬度8~60μm、長度400μm以下(下限與寬度為同等倍率)之情形時，尤其與習知之異向導電性連接相比可由連接端子捕捉到之導電粒子數穩定地增加，從而可提高連接可靠性。再者，若連接端子面之短邊方向之寬度較其小，則會頻繁產生連接不良，若較其大，則難以應對COG連接中所必需之高密度構裝。又，若連接端子面之長度較其短，則難以獲得穩定之導通，若長度較其長，則成為單端接觸之重要原因。又，於第2電子零件為如可撓性基板(FPC)般配線間距離成為40μm以上之相對難以產生短路者之情形時，可使用6μm以上之相對大徑之導電粒子(粒徑之上限取決於間隙，較佳為30μm以下，更佳為15μm以下，進而更佳為未達15μm)。藉由使用此種相對較大之導電粒子，而即便第1電子零件之連 接面上之配線高度之位置存在輕微之偏差，亦可穩定地進行連接。作為此種配線高度之位置產生偏差者，可列舉因製造上之問題而使表面具有彎曲之陶瓷基座。
本發明亦包含以如上方式進行異向導電性連接之第1電子零件與第2電子零件之連接構造體。
實施例
以下，基於實施例對本發明具體地進行說明。
實施例1~3、比較例1
(1)異向導電性膜之製造
製備含有苯氧基樹脂(熱塑性樹脂)(新日鐵住金(股)，YP-50)60質量份、環氧樹脂(熱固性樹脂)(三菱化學(股)，jER828)40質量份、陽離子系硬化劑(三新化學工業(股)，SI-60L)2質量份、及二氧化矽微粒子(日本Aerosil(股)，Aerosil RY 200)20質量份的絕緣性樹脂之混合溶液，將其塗佈於膜厚50μm之PET膜上，並於80℃之烘箱中使其乾燥5分鐘，而於PET膜上形成厚度20μm之黏著層。
另一方面，以表1所示之配置製作具有凸部之排列圖案之模具，使公知之透明性樹脂之顆粒於熔融狀態下流入該模具中，並進行冷卻而凝固，藉此形成凹部為表1所示之配置之樹脂模具。向該樹脂模具之凹部填充導電粒子(積水化學工業(股)，AUL704，粒徑4μm)，並於該導電粒子上覆蓋上述絕緣性樹脂之黏著層，藉由紫外線硬化而使該絕緣性樹脂中所含之硬化性樹脂硬化。繼而，將絕緣性樹脂自模具剝離，而製造各實施例及比較例之異向導電性膜。
(2)最靠近導電粒子之中心間距
於各實施例及比較例之異向導電性膜中，使用光學顯微鏡測量並確認基準導電粒子P0與最靠近該基準導電粒子P0之第1導電粒子P1之中心間距L1。於此情形時，任意測量100個、50組位於連結基準導電粒子P0之中心與第1導電粒子P1之中心之第1排列軸A1上之導電粒子，求出其平均值，並確認為所需之中心間距L1。將結果示於表1。
(3)相鄰之導電粒子之重疊寬度W1、W2
於各實施例及比較例之異向導電性膜中，使用金屬顯微鏡測量於異向導電性膜之長邊方向F1上相鄰之導電粒子P之重疊寬度W1及於異向導電性膜之短邊方向F2上相鄰之導電粒子P之重疊寬度W2。將結果示於表1。
(4)導通評價
分別以如下方式對各實施例及比較例之異向導電性膜之(a)初始導通電阻、(b)導通可靠性、(c)短路發生率進行評價。將結果示於表1。
(a)初始導通電阻
將各實施例及比較例之異向導電性膜夾於初始導通及導通可靠性之評價用IC與玻璃基板之間，並進行加熱加壓(180℃、80MPa、5秒)而獲得各評價用連接物。於此情形時，使異向導電性膜之長邊方向與連接端子之短邊方向一致。繼而，測定該評價用連接物之導通電阻。
此處，關於該各評價用IC與玻璃基板，其等之端子圖案對應，且尺寸如下所述。
初始導通及導通可靠性之評價用IC
外徑 0.7×20mm
厚度 0.2mm
凸塊規格 鍍金，高度12μm，尺寸15×100μm，凸塊間距離15μm
玻璃基板
玻璃材質 康寧公司製造
外徑 30×50mm
厚度 0.5mm
電極 ITO配線
(b)導通可靠性
以與(a)相同之方式測定將(a)初始導通電阻之評價用IC與各實施例及比較例之異向導電性膜之評價用連接物於溫度85℃、濕度85%RH之恆溫槽中放置500小時後之導通電阻。再者，若該導通電阻為5Ω以上，則就所連接之電子零件之實用導通穩定性方面而言欠佳。
(c)短路發生率
準備以下IC(7.5μm間隙之梳齒TEG(test element group，測試元件組))作為短路發生率之評價用IC。
外徑 1.5×13mm
厚度 0.5mm
凸塊規格 鍍金，高度15μm，尺寸25×140μm，凸塊間距離7.5μm
將各實施例及比較例之異向導電性膜挾於短路發生率之評價用IC及與該評價用IC對應之圖案之玻璃基板之間，並於與(a)相同之連接條件下進行加熱加壓而獲得連接物，求出該連接物之短路發生率。短路發生率係根據「短路之發生數/7.5μm間隙總數」而算出。若短路發生率 為50ppm以上，則就製造實用之連接構造體方面而言欠佳。
(5)連結粒子
於(a)初始導通電阻之評價用IC與各實施例及比較例之異向導電性膜之評價用連接物中，使用金屬顯微鏡測量100個相鄰之連接端子間中未與端子連接而存在之2個導電粒子連結而成之導電粒子塊之數量、或3個連結而成之導電粒子塊之數量。將結果示於表1。
根據表1可知，實施例1~3之異向導電性膜與比較例1之導電性膜係導電粒子均為高密度，但於比較例1之異向導電性膜中產生3個導電粒子連結而成之導電粒子塊而容易發生短路，相對於此，於實施例1~3之異向導電性膜中不易產生導電粒子塊而端子不易短路。
又，對該等之連接狀態進行觀察，結果，於比較例1中，可能由於導電粒子之排列係由與凸塊行平行之排列及正交之排列構成，故而難以確認導電粒子之排列狀態於連接前後之變化。然而，相鄰之導電粒子於異向導電性膜之長邊方向及短邊方向之至少一者上重疊且重疊寬度W1、W2未達導電粒子之粒徑之1倍的實施例1~3中，容易掌握連接前後 之導電粒子之位置變化。
1A‧‧‧異向導電性膜
3‧‧‧端子或連接端子
10‧‧‧絕緣接著劑層
A1‧‧‧第1排列軸
A2‧‧‧第2排列軸
D‧‧‧粒徑
F1‧‧‧異向導電性膜之長邊方向
F2‧‧‧異向導電性膜之短邊方向
L1‧‧‧基準導電粒子與第1導電粒子之中心間距
L2‧‧‧基準導電粒子與第2導電粒子之中心間距
P‧‧‧導電粒子
P0‧‧‧基準導電粒子
P1‧‧‧第1導電粒子
P2‧‧‧第2導電粒子
P3‧‧‧導電粒子
P4‧‧‧導電粒子
q1‧‧‧基準導電粒子於異向導電性膜之長邊方向之投影像
q2‧‧‧基準導電粒子於異向導電性膜之短邊方向之投影像
W1‧‧‧於異向導電性膜之長邊方向上相鄰之導電粒子之重疊寬度
W2‧‧‧於異向導電性膜之短邊方向上相鄰之導電粒子之重疊寬度
X‧‧‧箭頭

Claims (8)

  1. 一種異向導電性膜，其含有絕緣接著劑層及格子狀地配置於該絕緣接著劑層之導電粒子，且對於設為基準之任意導電粒子(以下，稱為基準導電粒子)、最靠近基準導電粒子之第1導電粒子、與第2導電粒子，基準導電粒子於異向導電性膜之長邊方向之投影像與第1導電粒子或第2導電粒子重疊，基準導電粒子於異向導電性膜之短邊方向之投影像與第2導電粒子或第1導電粒子重疊，基準導電粒子於異向導電性膜之長邊方向之投影像與第1導電粒子或第2導電粒子之重疊區域於異向導電性膜之短邊方向之最大寬度(以下，稱為於異向導電性膜之長邊方向相鄰的導電粒子之重疊寬度)、及基準導電粒子於異向導電性膜之短邊方向之投影像與第2導電粒子或第1導電粒子之重疊區域於異向導電性膜之長邊方向之最大寬度(以下，稱為於異向導電性膜之短邊方向相鄰的導電粒子之重疊寬度)之至少一者未達導電粒子之粒徑的1倍；又，上述第2導電粒子係：與第1導電粒子同等或繼第1導電粒子之後靠近基準導電粒子的導電粒子，並且不在包含基準導電粒子與第1導電粒子之格子軸上。
  2. 如申請專利範圍第1項之異向導電性膜，其中，導電粒子之格子狀配置為斜方格子。
  3. 如申請專利範圍第1或2項之異向導電性膜，其中，於異向導電性膜之長邊方向相鄰的導電粒子之重疊寬度與導電粒子之粒徑相等。
  4. 如申請專利範圍第1或2項之異向導電性膜，其中，於異向導電性膜之短邊方向相鄰的導電粒子之重疊寬度與導電粒子之粒徑相等。
  5. 如申請專利範圍第1至4項中任一項之異向導電性膜，其中，於異向導電性膜之長邊方向相鄰的導電粒子之重疊寬度、及於異向導電性膜之短邊方向相鄰的導電粒子之重疊寬度之至少一者未達導電粒子之粒徑的0.5倍。
  6. 如申請專利範圍第1至5項中任一項之異向導電性膜，其中，基準導電粒子與第1導電粒子之中心間距及基準導電粒子與第2導電粒子之中心間距分別為導電粒子之粒徑的1.5~2000倍。
  7. 如申請專利範圍第1至6項中任一項之異向導電性膜，其中，基準導電粒子與第1導電粒子之中心間距及基準導電粒子與第2導電粒子之中心間距分別為導電粒子之粒徑的1.5~5倍。
  8. 一種連接構造體，其係利用申請專利範圍第1至7項中任一項之異向導電性膜將第1電子零件與第2電子零件進行異向導電性連接而成。
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