WO2015172396A1 - 一种柔性显示器的制作方法 - Google Patents

一种柔性显示器的制作方法 Download PDF

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Publication number
WO2015172396A1
WO2015172396A1 PCT/CN2014/077752 CN2014077752W WO2015172396A1 WO 2015172396 A1 WO2015172396 A1 WO 2015172396A1 CN 2014077752 W CN2014077752 W CN 2014077752W WO 2015172396 A1 WO2015172396 A1 WO 2015172396A1
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Prior art keywords
amorphous silicon
substrate
flexible
silicon layer
flexible display
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PCT/CN2014/077752
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English (en)
French (fr)
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苏长义
郑扬霖
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深圳市华星光电技术有限公司
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Priority to US14/382,729 priority Critical patent/US9287077B2/en
Publication of WO2015172396A1 publication Critical patent/WO2015172396A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6835—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

Definitions

  • the invention belongs to the field of displays, and in particular relates to a method for manufacturing a flexible display.
  • flexible display is a form of next-generation display that has the advantage of being flexible and thin, so it is easy to carry and can be used to make a wearable device.
  • the current flexible display manufacturing process is: attaching a plastic substrate to a glass substrate, and completing the LCD (Liquid Crystal) Display, Liquid Crystal Display), EPD (Electro-Phoretic Display) or OLED (Organic Light-Emitting) After the product process such as Diode, organic light emitting diode), the plastic substrate is removed from the glass substrate.
  • LCD Liquid Crystal
  • EPD Electro-Phoretic Display
  • OLED Organic Light-Emitting
  • the present invention is achieved by a method of fabricating a flexible display, wherein the method of fabricating the flexible display comprises the following steps:
  • the frame type amorphous silicon layer is subjected to dehydrogenation treatment to separate the flexible substrate from the frame type amorphous silicon layer, thereby obtaining a flexible display.
  • Another object of the present invention is to provide a method of fabricating a flexible display, the method of fabricating the flexible display comprising the following steps:
  • the frame type silicon layer is subjected to a dehydrogenation treatment to separate the flexible substrate from the frame type silicon layer, thereby obtaining a flexible display.
  • the rigid substrate is a glass substrate, and the material of the silicon layer is amorphous silicon;
  • the step of forming a silicon layer on the rigid substrate comprises:
  • An amorphous silicon layer is formed on the glass substrate.
  • the step of forming an amorphous silicon layer on the glass substrate comprises:
  • the cleaned glass substrate is grown on a chemical vapor deposition machine using a film formation method to grow hydrogen-containing amorphous silicon, and the ratio of hydrogen gas is increased during film formation to cause a high ratio of hydrogen atoms in the amorphous silicon.
  • the step of forming the silicon layer into a frame type silicon layer via an exposure process and an etching process comprises:
  • the amorphous silicon layer is etched to form frame-type amorphous silicon.
  • the flexible substrate is a plastic substrate
  • the step of attaching the flexible substrate on the surface of the rigid substrate on which the frame type silicon layer is formed includes:
  • a plastic substrate is attached to the surface of a glass substrate on which a frame-type amorphous silicon is formed.
  • the step of attaching a plastic substrate on a surface of a glass substrate on which a frame-type amorphous silicon is formed comprises:
  • the plastic substrate is bonded to the surface of the glass substrate on which the frame-shaped amorphous silicon is formed by a coating method.
  • the step of attaching a plastic substrate on a surface of a glass substrate on which a frame-type amorphous silicon is formed comprises:
  • the plastic substrate is bonded to the surface of the glass substrate on which the framed amorphous silicon is formed by pressure bonding.
  • the frame type silicon layer is subjected to a dehydrogenation treatment to separate the flexible substrate from the frame type silicon layer, thereby obtaining the flexible display step comprising:
  • the amorphous silicon is dehydrogenated, and the generated hydrogen gas automatically separates the plastic substrate from the amorphous silicon, thereby obtaining a flexible display.
  • the amorphous silicon is dehydrogenated, and the generated hydrogen gas automatically separates the plastic substrate from the amorphous silicon, thereby obtaining the steps of the flexible display, including:
  • the amorphous silicon is dehydrogenated by a laser irradiation method, and in the dehydrogenation process, the generated hydrogen gas automatically separates the plastic substrate from the amorphous silicon, thereby obtaining a flexible display.
  • the step of fabricating the display device layer on the flexible substrate comprises:
  • the step of fabricating the display device layer on the flexible substrate comprises:
  • the step of fabricating the display device layer on the flexible substrate comprises:
  • An organic light emitting diode display device layer is formed on the flexible substrate.
  • a process is added to form a frame-type amorphous silicon having a high concentration of hydrogen, so that the frame-type amorphous silicon is located on the plastic substrate and the glass substrate.
  • the laser is used for the dehydrogenation process, and the dehydrogenation process can be performed.
  • the hydrogen gas is generated, and the generated hydrogen gas can separate the periphery of the plastic substrate from the glass substrate, so that the separation process of the subsequent plastic substrate and the glass substrate can be easily performed, and the problem that the plastic substrate is damaged in the separation process can be avoided.
  • FIG. 1 is a schematic flowchart of an implementation process of a method for manufacturing a flexible display according to an embodiment of the present invention
  • FIG. 2 is a schematic flow chart of forming a frame type amorphous silicon according to an embodiment of the present invention
  • FIG. 3 is a schematic flow chart of obtaining a flexible display according to an embodiment of the present invention.
  • a process is added to form a frame type high-concentration hydrogen containing amorphous silicon, and the display device layer (such as LCD, EPD or After the OLED display device layer), the dehydrogenation process is performed by using a laser, and dehydrogenation can generate hydrogen gas, and the generated hydrogen gas can separate the periphery of the plastic substrate from the glass substrate, so that the separation process of the subsequent plastic substrate and the glass substrate can be easily performed.
  • the dehydrogenation process is performed by using a laser, and dehydrogenation can generate hydrogen gas, and the generated hydrogen gas can separate the periphery of the plastic substrate from the glass substrate, so that the separation process of the subsequent plastic substrate and the glass substrate can be easily performed. The problem that the plastic substrate is damaged in the separation process and the yield is avoided.
  • FIG. 1 is a schematic flowchart of implementing a method for manufacturing a flexible display according to an embodiment of the present invention, which includes the following steps:
  • step S101 a silicon layer is formed on the rigid substrate
  • the rigid substrate is, for example, a quartz substrate or a glass substrate, but is not limited thereto.
  • the rigid substrate of the embodiment of the present invention is a glass substrate.
  • the material of the silicon layer is, for example, amorphous silicon, single crystal silicon or polycrystalline silicon.
  • the material used in the silicon layer of the embodiment of the invention is amorphous silicon. Therefore, preferably, an embodiment of the present invention forms an amorphous silicon layer 10 on the glass substrate 20.
  • the cleaned glass substrate 20 is first used in CVD (Chemical Vapor) Deposition, chemical vapor deposition)
  • CVD Chemical Vapor
  • a film-forming method is used to grow amorphous silicon containing hydrogen.
  • the proportion of hydrogen gas is increased, so that the amorphous silicon contains a high ratio of hydrogen atoms.
  • the thickness of amorphous silicon is more than 1000A.
  • the silicon layer of the embodiment of the present invention uses amorphous silicon having a thickness of about 1000A.
  • step S102 the silicon layer is formed into a frame type silicon layer via an exposure process and an etching process
  • the amorphous silicon is formed into a frame type amorphous silicon through an exposure process and an etching process.
  • a photoresist 40 is applied on the surface of the amorphous silicon layer 10, and then the photoresist is exposed by a photomask 30, and then the photoresist is developed; after development, the amorphous silicon layer is etched to form Frame type amorphous silicon.
  • the frame type amorphous silicon since the frame type amorphous silicon is used, the number of lasers and the irradiation time can be reduced, the laser cost can be reduced and the output speed can be increased, and the plastic substrate can be prevented after the comprehensive amorphous silicon dehydrogenation separation is avoided. Displacement, causing difficulties in subsequent processes and continuous production.
  • step S103 a flexible substrate is attached on the surface of the rigid substrate on which the frame type silicon layer is formed;
  • the flexible substrate is, for example, a glass film substrate, a stainless steel film substrate, or a plastic substrate, but is not limited thereto.
  • the flexible substrate of the embodiment of the present invention uses a plastic substrate. Therefore, preferably, in the embodiment of the invention, the plastic substrate 50 is attached to the surface of the glass substrate on which the framed amorphous silicon is formed.
  • the plastic substrate 50 is adhered on the surface of the glass substrate 20 on which the framed amorphous silicon is formed by a coating method or a press-bonding method, wherein the plastic substrate is a plastic film.
  • the plastic substrate is a plastic film.
  • Commonly used materials are PI (oriented film layer), PEN (polyethylene naphthalate), PET (Polyethylene) Terephthalate, polyterephthalic plastics, etc.
  • step S104 a display device layer is formed on the flexible substrate
  • the display device layer 60 is formed on the plastic substrate 50.
  • a multilayer display device layer is formed on the plastic substrate.
  • step S104 is to fabricate an LCD display device layer on the flexible substrate.
  • an LCD display device layer is formed on the plastic substrate.
  • step S104 is to fabricate an EPD display device layer on the flexible substrate.
  • an EPD display device layer is formed on the plastic substrate.
  • step S104 is to form an OLED display device layer on the flexible substrate.
  • an OLED display device layer is formed on the plastic substrate.
  • an organic light emitting diode display layer is formed on a plastic substrate and an organic light emitting diode display layer is packaged to form an encapsulation layer.
  • the display layer of the light emitting diode includes, for example, a thin film transistor control circuit, a conductive electrode, an organic material functional layer, a metal electrode, and the like.
  • the method of packaging the LED display layer includes, for example, a metal encapsulation method, a glass encapsulation method, a plastic encapsulation method, or a thin film encapsulation method, but is not limited thereto.
  • the components of the organic light-emitting diode display layer are seriously sensitive to the corrosion of water vapor and oxygen.
  • step S105 after the display device layer is completed, the frame type silicon layer is subjected to a dehydrogenation treatment to separate the flexible substrate from the frame type silicon layer, thereby obtaining a flexible display.
  • the amorphous silicon is dehydrogenated, and the generated hydrogen gas automatically separates the plastic substrate from the amorphous silicon, thereby obtaining a flexible display.
  • the step S105 specifically includes: after the display device layer is completed, the amorphous silicon is dehydrogenated by a laser irradiation method, and in the dehydrogenation process, the generated hydrogen gas automatically separates the plastic substrate from the amorphous silicon.
  • the laser may be an excimer laser.
  • the frame-type amorphous silicon is sandwiched between the plastic substrate and the glass substrate, that is, the periphery of the plastic substrate and the glass substrate is sandwiched with amorphous silicon, and there is no amorphous except for the edge. Silicon, so the amorphous silicon is dehydrogenated by laser irradiation. During the dehydrogenation process, the generated hydrogen will automatically separate the amorphous silicon from the surrounding plastic substrate. This can reduce the number of lasers and the irradiation time, reduce the laser cost and increase the output speed, and can avoid the displacement of the plastic substrate after the dehydration separation of the comprehensive amorphous silicon, which causes difficulties in subsequent processes and continuous production.
  • the amorphous silicon is conventionally dehydrogenated by a laser irradiation method, and the irradiation time thereof needs to be 240 seconds or more.
  • the frame design of the embodiment of the present invention can be reduced to 50 seconds or less.
  • the manufacturing method of the flexible display adds a process to form a frame type high-concentration hydrogen-containing silicon layer before the attaching process of the flexible substrate and the rigid substrate, so that the frame is formed.
  • the silicon layer is located between the flexible substrate and the rigid substrate, and is used as a process technology for improving the damage of the flexible substrate or the rigid substrate when the flexible substrate is not separated and separated during the stripping process. After the flexible substrate coating process and the display process are completed, the silicon substrate is reused.
  • the laser performs a dehydrogenation process, and dehydrogenation can generate hydrogen gas, and the generated hydrogen gas can separate the periphery of the flexible substrate from the rigid substrate, so that the separation process of the subsequent flexible substrate and the rigid substrate can be easily performed, and the flexible substrate can be avoided in the separation process. Damage caused by the problem of yield.
  • the technical solution provided by the embodiment of the present invention increases the cost by about 10-15% due to the addition of a mask process, but can greatly improve the yield.
  • the separation process yield of the amorphous silicon film is about 5%, and the yield of the embodiment of the present invention can be increased to more than 90%.
  • the cleaned glass substrate is grown on a CVD machine using a film forming method to grow hydrogen-containing amorphous silicon, and the ratio of hydrogen gas is increased during film formation to cause a high ratio of hydrogen atoms in the amorphous silicon.
  • the photoresist is then exposed with a photomask.
  • the amorphous silicon is etched to form a frame type amorphous silicon.
  • the amorphous silicon is dehydrogenated by laser irradiation.
  • the generated hydrogen gas automatically separates the plastic substrate from the amorphous silicon, thereby obtaining a flexible display.
  • a process is added to form a frame type high-concentration hydrogen containing amorphous silicon, so that the frame type amorphous silicon is located in the plastic.
  • the process technology for improving the damage of the plastic substrate or the glass substrate during the peeling process of the plastic substrate is not easy to be separated and separated.
  • the laser is used for the dehydrogenation process.
  • Dehydrogenation can generate hydrogen gas, and the generated hydrogen gas can separate the periphery of the plastic substrate from the glass substrate, so that the separation process of the subsequent plastic substrate and the glass substrate can be easily completed, and the yield of the plastic substrate in the separation process can be avoided. problem.

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Abstract

一种柔性显示器的制作方法，包括：在刚性基板上（20）形成一硅层（10）；将硅层做成框型硅层；在形成有框型硅层的刚性基板表面上贴附柔性基板（50）；制作显示器件层（60）于柔性基板上；在完成显示器件层后，对框型硅层进行脱氢处理，以使得所述柔性基板与所述框型硅层分开，从而得到柔性显示器。可以避免柔性基板在分离工艺中损坏造成良率的问题。

Description

一种柔性显示器的制作方法 技术领域
本发明属于显示器领域，尤其涉及一种柔性显示器的制作方法。
 背景技术
目前，柔性显示器（flexible display）是下一代显示器的形态，其优点为可弯曲及轻薄，因此方便携带，还能用于制作穿戴装置。
现行柔性显示器的制作流程是：将塑料基板贴附在玻璃基板上，待完成LCD（ Liquid Crystal Display，液晶显示器） 、EPD（Electro-Phoretic Display电泳显示）或OLED（Organic Light-Emitting Diode, 有机发光二极管）等产品工艺后，将塑料基板从玻璃基板上取下。
但目前在取下塑料基板工艺程序时会存在缺陷，由于塑料基板与玻璃基板黏合度太高，工具不容易伸入玻璃基板与塑料基板中间，因此导致分离塑料基板与玻璃基板不易，也容易造成塑料膜损伤及良率不佳的问题。
 技术问题
本发明的目的在于提供一种柔性显示器的制作方法，旨在解决现有技术中存在的在取下塑料基板工艺程序时，由于塑料基板与玻璃基板黏合度太高，工具不容易伸入玻璃基板与塑料基板中间，因此导致分离塑料基板与玻璃基板不易，也容易造成塑料膜损伤及良率不佳的问题。
 技术解决方案
本发明是这样实现的，一种柔性显示器的制作方法，其中所述柔性显示器的制作方法包括以下步骤：
在刚性基板上形成一非晶硅层；
经由曝光制程及蚀刻制程将所述非晶硅层做成框型非晶硅层；
在形成有框型非晶硅层的刚性基板表面上贴附柔性基板；
制作多层显示器件层于所述柔性基板上；
在完成显示器件层后，对框型非晶硅层进行脱氢处理，以使得所述柔性基板与所述框型非晶硅层分开，从而得到柔性显示器。
本发明的另一目的在于提供一种柔性显示器的制作方法，所述柔性显示器的制作方法包括以下步骤：
在刚性基板上形成一硅层；
经由曝光制程及蚀刻制程将所述硅层做成框型硅层；
在形成有框型硅层的刚性基板表面上贴附柔性基板；
制作显示器件层于所述柔性基板上；
在完成显示器件层后，对框型硅层进行脱氢处理，以使得所述柔性基板与所述框型硅层分开，从而得到柔性显示器。
优选地，所述刚性基板为玻璃基板，所述硅层采用的材料是非晶硅；
所述在刚性基板上形成一硅层的步骤包括：
在玻璃基板上成膜一非晶硅层。
优选地，所述在玻璃基板上成膜一非晶硅层的步骤，包括：
将清洗后的玻璃基板，于化学气相沉积机台上使用成膜方法长出含氢的非晶硅，成膜时增加氢气气体比例，使非晶硅内含有高比率的氢原子。
优选地，所述经由曝光制程及蚀刻制程将所述硅层做成框型硅层的步骤，包括：
在非晶硅层表面涂抹光阻；
然后用光罩对所述光阻进行曝光；
接着对光阻进行显影；
在显影后，对非晶硅层进行蚀刻，形成框型非晶硅。
优选地，所述柔性基板为塑料基板；
所述在形成有框型硅层的刚性基板表面上贴附柔性基板的步骤包括：
在成膜有框型非晶硅的玻璃基板表面上贴附塑料基板。
优选地，所述在成膜有框型非晶硅的玻璃基板表面上贴附塑料基板的步骤，包括：
用涂布法在成膜有框型非晶硅的玻璃基板表面上黏合塑料基板。
优选地，所述在成膜有框型非晶硅的玻璃基板表面上贴附塑料基板的步骤，包括：
以压合贴合法在成膜有框型非晶硅的玻璃基板表面上黏合塑料基板。
优选地，所述在完成显示器件层后，对框型硅层进行脱氢处理，以使得所述柔性基板与所述框型硅层分开，从而得到柔性显示器的步骤包括：
在完成显示器件层后，对非晶硅进行脱氢，产生的氢气会自动将塑料基板与非晶硅分开，从而得到柔性显示器。
优选地，所述在完成显示器件层后，对非晶硅进行脱氢，产生的氢气会自动将塑料基板与非晶硅分开，从而得到柔性显示器的步骤，包括：
在完成显示器件层后，采用激光照射方法将非晶硅脱氢，在脱氢过程中，产生的氢气会自动将塑料基板与非晶硅分开，从而得到柔性显示器。
优选地，当制作的是柔性液晶显示器时，所述制作显示器件层于所述柔性基板上的步骤，包括：
制作液晶显示器件层于所述柔性基板上；或者，
当制作的是柔性电泳显示器时，所述制作显示器件层于所述柔性基板上的步骤，包括：
制作电泳显示器件层于所述柔性基板上；或者，
当制作的是柔性有机发光二极管显示器时，所述制作显示器件层于所述柔性基板上的步骤，包括：
制作有机发光二极管显示器件层于所述柔性基板上。
 有益效果
在本发明中，在塑料基板与玻璃基板进行贴附工艺之前，增加一道工艺，以形成一框型的高浓度含氢量的非晶硅，使该框型非晶硅位于塑料基板与玻璃基板之间，用作改善塑料基板在剥离工艺时，不易分离及分离造成塑料基板或玻璃基板损坏的工艺技术，完成塑料基板涂布工艺以及显示器工艺后，再利用激光进行脱氢工艺，脱氢可以产生氢气，产生的氢气可以使塑料基板的周边与玻璃基板分离，从而使后续的塑料基板与玻璃基板的分离工艺可以轻松完成，可以避免塑料基板在分离工艺中损坏造成良率的问题。
 附图说明
图1是本发明实施例提供的柔性显示器的制作方法的实现流程示意图；
图2是本发明实施例提供的形成框型非晶硅的流程示意图；
图3是本发明实施例提供的得到柔性显示器的流程示意图。
 本发明的最佳实施方式
为了使本发明的目的、技术方案及有益效果更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
在本发明实施例中，在塑料基板与玻璃基板进行贴附工艺之前，增加一道工艺，以形成一框型的高浓度含氢量的非晶硅，待完成显示器件层（如LCD、EPD或OLED显示器件层）后，再利用激光进行脱氢工艺，脱氢可以产生氢气，产生的氢气可以使塑料基板的周边与玻璃基板分离，从而使后续的塑料基板与玻璃基板的分离工艺可以轻松完成，可以避免塑料基板在分离工艺中损坏造成良率的问题。
请参阅图1，为本发明实施例提供的柔性显示器的制作方法的实现流程示意图，其包括以下步骤：
在步骤S101中，在刚性基板上形成一硅层；
在本发明实施例中，刚性基板例如是石英基板或玻璃基板，但并不限定于此，优选地，本发明实施例的刚性基板采用的是玻璃基板。硅层的材料例如为非晶硅、单晶硅或多晶硅。优选地，本发明实施例的硅层采用的材料是非晶硅。因此，优选地，本发明实施例是在玻璃基板20上成膜一非晶硅层10。
在本发明实施例中，首先将清洗后的玻璃基板20，于CVD(Chemical Vapor Deposition, 化学气相沉积)机台上使用成膜方法长出含氢的非晶硅，成膜时增加氢气气体比例，使非晶硅内含有高比率的氢原子。
优选地，为了确保激光能有效照射，氢气能有效生成及产出，一般来说非晶硅的厚度会做在1000A以上。本发明实施例中，本发明实施例的硅层采用的是厚度约1000A的非晶硅。
在步骤S102中，经由曝光制程及蚀刻制程将所述硅层做成框型硅层；
在本发明实施例中，优选地，经由曝光制程及蚀刻制程将所述非晶硅做成框型非晶硅。
请参阅图2，在非晶硅层10表面涂抹光阻40，然后用光罩30对所述光阻进行曝光，接着对光阻进行显影；在显影后，对非晶硅层进行蚀刻，形成框型非晶硅。
在本发明实施例中，由于采用框型非晶硅，可减少激光的数量与照射时间,减少激光费用与增加产出速度，也可避免全面性非晶硅脱氢分离后，塑料基板可能发生位移，造成后续工艺与连续生产的困难。
在步骤S103中，在形成有框型硅层的刚性基板表面上贴附柔性基板；
在本发明实施例中，柔性基板例如是玻璃薄膜基板、不锈钢薄膜基板或塑料基板，但并不限于此，优选地，本发明实施例的柔性基板采用的是塑料基板。因此，优选地，本发明实施例是在成膜有框型非晶硅的玻璃基板表面上贴附塑料基板50。
在本发明实施例中，请参阅图3，用涂布法或以压合贴合法在成膜有框型非晶硅的玻璃基板20表面上黏合塑料基板50，其中塑料基板即为塑料膜，常用材料为PI（取向膜层）、PEN（聚萘二甲酸乙二醇酯）、PET（Polyethylene terephthalate，聚对苯二甲酸类塑料）等。
在步骤S104中，制作显示器件层于所述柔性基板上；
优选地，本发明实施例是制作显示器件层60于所述塑料基板50上。
在本发明实施例中，具体的，制作多层显示器件层于所述塑料基板上。
作为本发明一实施例，如制作的是柔性LCD显示器，那么步骤S104即为：制作LCD显示器件层于所述柔性基板上。优选地，制作LCD显示器件层于所述塑料基板上。
作为本发明另一实施例，如制作的是柔性EPD显示器，那么步骤S104即为：制作EPD显示器件层于所述柔性基板上。优选地，制作EPD显示器件层于所述塑料基板上。
作为本发明再一实施例，如制作的是柔性OLED显示器，那么步骤S104即为：制作OLED显示器件层于所述柔性基板上。优选地，制作OLED显示器件层于所述塑料基板上。
具体包括：
首先，在塑料基板上制作有机发光二极管显示层以及封装有机发光二极管显示层以形成封装层。其中，机发光二极管显示层例如包括薄膜晶体管控制电路、导电电极、有机材料功能层以及金属电极等。封装机发光二极管显示层的方法例如包括金属封装法、玻璃封装法、塑料封装法或薄膜封装法，但并不限定于此。由有机发光二极管显示层的元件对水汽、氧气的腐蚀严重敏感，因此在制作过程中，应尽量避免水汽和氧气，或在真空环境中进行制作。制作有机发光二极管显示层以及封装有机发光二极管显示层以形成封装层为本领域技术人员熟知的技术，在此不再赘述。
在步骤S105中，在完成显示器件层后，对框型硅层进行脱氢处理，以使得所述柔性基板与所述框型硅层分开，从而得到柔性显示器。
优选地，本发明实施例是在完成显示器件层后，对非晶硅进行脱氢，产生的氢气会自动将塑料基板与非晶硅分开，从而得到柔性显示器。
在本发明实施例中，步骤S105具体包括：在完成显示器件层后，采用激光照射方法将非晶硅脱氢，在脱氢过程中，产生的氢气会自动将塑料基板与非晶硅分开，从而得到柔性显示器。其中，优选地，激光可以采用准分子激光。
然而，可以理解的是，由于塑料基板与玻璃基板之间夹着的是框型非晶硅，即塑料基板与玻璃基板的四周边缘才夹有非晶硅，除边缘外的地方均没有非晶硅，所以采用激光照射方法将非晶硅脱氢，在脱氢过程中，产生的氢气会自动将非晶硅与周边的塑料基板分开。这样可减少激光的数量与照射时间，减少激光费用与增加产出速度，也可避免全面性非晶硅脱氢分离后，塑料基板可能发生位移，造成后续工艺与连续生产的困难。
如，以G8.5代玻璃尺寸计算，传统采用激光照射方法将非晶硅脱氢，其照射时间需要240秒以上，本发明实施例采用框型设计可减至50秒以下。
由上可知，采用本发明实施例提供的柔性显示器的制作方法在柔性基板与刚性基板进行贴附工艺之前，增加一道工艺，以形成一框型的高浓度含氢量的硅层，使该框型硅层位于柔性基板与刚性基板之间，用作改善柔性基板在剥离工艺时，不易分离及分离造成柔性基板或刚性基板损坏的工艺技术，完成柔性基板涂布工艺以及显示器工艺后，再利用激光进行脱氢工艺，脱氢可以产生氢气，产生的氢气可以使柔性基板的周边与刚性基板分离，从而使后续的柔性基板与刚性基板的分离工艺可以轻松完成，可以避免柔性基板在分离工艺中损坏造成良率的问题。
本发明实施例提供的技术方案与完全不使用非晶硅膜的现有技术比较，虽然增加一道光罩工艺，造成成本上升约１０～１５％，但可大幅度提升良率。经实验分析，不使用非晶硅膜分离工艺良率约5％，采用本发明实施例提供的技术后良率可提升到90％以上。
下面结合图2及图3详细描述本发明实施例提供的柔性显示器的制作方法的实现流程。
1、首先将清洗后的玻璃基板，于CVD机台上使用成膜方法长出含氢的非晶硅，成膜时增加氢气气体比例，使非晶硅内含有高比率的氢原子。
2、在非晶硅表面涂抹光阻。
3、然后用光罩对所述光阻进行曝光。
4、接着对光阻进行显影。
5、在显影后，对非晶硅进行蚀刻，形成框型非晶硅。
6、用涂布法或以压合贴合法在成膜有框型非晶硅的玻璃基板表面上黏合塑料基板。
7、制作显示器件层于所述塑料基板上。
8、在完成显示器件层后，采用激光照射方法将非晶硅脱氢，在脱氢过程中，产生的氢气会自动将塑料基板与非晶硅分开，从而得到柔性显示器。
综上所述，本发明实施例在塑料基板与玻璃基板进行贴附工艺之前，增加一道工艺，以形成一框型的高浓度含氢量的非晶硅，使该框型非晶硅位于塑料基板与玻璃基板之间，用作改善塑料基板在剥离工艺时，不易分离及分离造成塑料基板或玻璃基板损坏的工艺技术，完成塑料基板涂布工艺以及显示器工艺后，再利用激光进行脱氢工艺，脱氢可以产生氢气，产生的氢气可以使塑料基板的周边与玻璃基板分离，从而使后续的塑料基板与玻璃基板的分离工艺可以轻松完成，可以避免塑料基板在分离工艺中损坏造成良率的问题。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。
 本发明的实施方式
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Claims (20)

  1. 一种柔性显示器的制作方法，其中所述柔性显示器的制作方法包括以下步骤：
    在刚性基板上形成一非晶硅层；
    经由曝光制程及蚀刻制程将所述非晶硅层做成框型非晶硅层；
    在形成有框型非晶硅层的刚性基板表面上贴附柔性基板；
    制作多层显示器件层于所述柔性基板上；
    在完成显示器件层后，对框型非晶硅层进行脱氢处理，以使得所述柔性基板与所述框型非晶硅层分开，从而得到柔性显示器。
  2. 如权利要求1所述的柔性显示器的制作方法，其中所述刚性基板为玻璃基板；
    所述在刚性基板上形成一非晶硅层的步骤包括：
    在玻璃基板上成膜一非晶硅层。
  3. 如权利要求2所述的柔性显示器的制作方法，其中所述在玻璃基板上成膜一非晶硅层的步骤，包括：
    将清洗后的玻璃基板，于化学气相沉积机台上使用成膜方法长出含氢的非晶硅，成膜时增加氢气气体比例，使非晶硅内含有高比率的氢原子。
  4. 如权利要求2所述的柔性显示器的制作方法，其中所述经由曝光制程及蚀刻制程将所述硅层做成框型硅层的步骤，包括：
    在非晶硅层表面涂抹光阻；
    然后用光罩对所述光阻进行曝光；
    接着对光阻进行显影；
    在显影后，对非晶硅层进行蚀刻，形成框型非晶硅。
  5. 如权利要求2所述的柔性显示器的制作方法，其中所述柔性基板为塑料基板；
    所述在形成有框型硅层的刚性基板表面上贴附柔性基板的步骤包括：
    在成膜有框型非晶硅的玻璃基板表面上贴附塑料基板。
  6. 如权利要求5所述的柔性显示器的制作方法，其中所述在成膜有框型非晶硅的玻璃基板表面上贴附塑料基板的步骤，包括：
    用涂布法在成膜有框型非晶硅的玻璃基板表面上黏合塑料基板。
  7. 如权利要求5所述的柔性显示器的制作方法，其中所述在成膜有框型非晶硅的玻璃基板表面上贴附塑料基板的步骤，包括：
    以压合贴合法在成膜有框型非晶硅的玻璃基板表面上黏合塑料基板。
  8. 如权利要求5所述的柔性显示器的制作方法，其中所述在完成显示器件层后，对框型硅层进行脱氢处理，以使得所述柔性基板与所述框型硅层分开，从而得到柔性显示器的步骤包括：
    在完成显示器件层后，对非晶硅进行脱氢，产生的氢气会自动将塑料基板与非晶硅分开，从而得到柔性显示器。
  9. 如权利要求8所述的柔性显示器的制作方法，其中所述在完成显示器件层后，对非晶硅进行脱氢，产生的氢气会自动将塑料基板与非晶硅分开，从而得到柔性显示器的步骤，包括：
    在完成显示器件层后，采用激光照射方法将非晶硅脱氢，在脱氢过程中，产生的氢气会自动将塑料基板与非晶硅分开，从而得到柔性显示器。
  10. 如权利要求1所述的柔性显示器的制作方法，其中当制作的是柔性液晶显示器时，所述制作多层显示器件层于所述柔性基板上的步骤，包括：
    制作液晶显示器件层于所述柔性基板上。
  11. 一种柔性显示器的制作方法，其中所述柔性显示器的制作方法包括以下步骤：
    在刚性基板上形成一硅层；
    经由曝光制程及蚀刻制程将所述硅层做成框型硅层；
    在形成有框型硅层的刚性基板表面上贴附柔性基板；
    制作显示器件层于所述柔性基板上；
    在完成显示器件层后，对框型硅层进行脱氢处理，以使得所述柔性基板与所述框型硅层分开，从而得到柔性显示器。
  12. 如权利要求11所述的柔性显示器的制作方法，其中所述刚性基板为玻璃基板，所述硅层采用的材料是非晶硅；
    所述在刚性基板上形成一硅层的步骤包括：
    在玻璃基板上成膜一非晶硅层。
  13. 如权利要求12所述的柔性显示器的制作方法，其中所述在玻璃基板上成膜一非晶硅层的步骤，包括：
    将清洗后的玻璃基板，于化学气相沉积机台上使用成膜方法长出含氢的非晶硅，成膜时增加氢气气体比例，使非晶硅内含有高比率的氢原子。
  14. 如权利要求12所述的柔性显示器的制作方法，其中所述经由曝光制程及蚀刻制程将所述硅层做成框型硅层的步骤，包括：
    在非晶硅层表面涂抹光阻；
    然后用光罩对所述光阻进行曝光；
    接着对光阻进行显影；
    在显影后，对非晶硅层进行蚀刻，形成框型非晶硅。
  15. 如权利要求12所述的柔性显示器的制作方法，其中所述柔性基板为塑料基板；
    所述在形成有框型硅层的刚性基板表面上贴附柔性基板的步骤包括：
    在成膜有框型非晶硅的玻璃基板表面上贴附塑料基板。
  16. 如权利要求15所述的柔性显示器的制作方法，其中所述在成膜有框型非晶硅的玻璃基板表面上贴附塑料基板的步骤，包括：
    用涂布法在成膜有框型非晶硅的玻璃基板表面上黏合塑料基板。
  17. 如权利要求15所述的柔性显示器的制作方法，其中所述在成膜有框型非晶硅的玻璃基板表面上贴附塑料基板的步骤，包括：
    以压合贴合法在成膜有框型非晶硅的玻璃基板表面上黏合塑料基板。
  18. 如权利要求15所述的柔性显示器的制作方法，其中所述在完成显示器件层后，对框型硅层进行脱氢处理，以使得所述柔性基板与所述框型硅层分开，从而得到柔性显示器的步骤包括：
    在完成显示器件层后，对非晶硅进行脱氢，产生的氢气会自动将塑料基板与非晶硅分开，从而得到柔性显示器。
  19. 如权利要求18所述的柔性显示器的制作方法，其中所述在完成显示器件层后，对非晶硅进行脱氢，产生的氢气会自动将塑料基板与非晶硅分开，从而得到柔性显示器的步骤，包括：
    在完成显示器件层后，采用激光照射方法将非晶硅脱氢，在脱氢过程中，产生的氢气会自动将塑料基板与非晶硅分开，从而得到柔性显示器。
  20. 如权利要求11所述的柔性显示器的制作方法，其中当制作的是柔性液晶显示器时，所述制作显示器件层于所述柔性基板上的步骤，包括：
    制作液晶显示器件层于所述柔性基板上。
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