WO2015159927A1 - エッチング装置、エッチング方法、基板の製造方法、および基板 - Google Patents

エッチング装置、エッチング方法、基板の製造方法、および基板 Download PDF

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Publication number
WO2015159927A1
WO2015159927A1 PCT/JP2015/061641 JP2015061641W WO2015159927A1 WO 2015159927 A1 WO2015159927 A1 WO 2015159927A1 JP 2015061641 W JP2015061641 W JP 2015061641W WO 2015159927 A1 WO2015159927 A1 WO 2015159927A1
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WIPO (PCT)
Prior art keywords
substrate
port
substrate carry
etching
nozzle
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PCT/JP2015/061641
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English (en)
French (fr)
Japanese (ja)
Inventor
龍 富永
啓史 佐藤
佑輔 似内
寧司 深澤
厚 城山
嘉孝 中谷
沙枝 若林
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旭硝子株式会社
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Application filed by 旭硝子株式会社 filed Critical 旭硝子株式会社
Priority to KR1020167028522A priority Critical patent/KR102368126B1/ko
Priority to JP2016513818A priority patent/JP6520928B2/ja
Priority to CN201580019805.3A priority patent/CN106233433B/zh
Publication of WO2015159927A1 publication Critical patent/WO2015159927A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers

Definitions

  • the present invention relates to an etching apparatus, an etching method, a substrate manufacturing method, and a substrate.
  • the substrate is charged by static electricity generated when the substrate comes into contact with a stage or the like. Therefore, in order to suppress such charging, the surface on which the substrate is placed on a stage or the like (hereinafter referred to as “rear surface”) is etched with plasma containing HF-based gas, and the rear surface of the substrate It has been proposed to roughen the surface (for example, see Patent Document 1). Further, a method is known in which a fluorine-containing gas, water vapor, and plasma are reacted to generate a reactive gas containing an HF gas, and this reactive gas is sprayed onto the substrate to etch the substrate (see, for example, Patent Document 2). ).
  • etching tank a structure in which a substrate carrying-in port and a substrate carrying-out port are provided in a tank (hereinafter referred to as “etching tank”) in which a glass substrate is chemically treated is known (see, for example, Patent Document 3). ).
  • etching tank a tank in which a glass substrate is chemically treated
  • Patent Document 3 a reactive gas is sprayed from the nozzle onto one surface of the substrate.
  • the roughness at each location on the backside of the substrate is determined by two factors: the concentration of the reaction gas to which the location is exposed and the accumulated time at which the location is exposed to the reaction gas. These factors greatly fluctuate due to airflow disturbance caused by the outside air flowing in from the substrate carry-in port and the substrate carry-out port.
  • the conventional etching apparatus cannot sufficiently suppress the influence of the disturbance of the airflow, the nonuniformity of the roughness has occurred with the inflow of the outside air into the etching tank. As a result, it has been difficult to reduce the amount of static electricity on the back surface of the substrate.
  • the present invention has been made in view of the above circumstances, and provides an etching apparatus and an etching method capable of suppressing roughness non-uniformity due to inflow of outside air into an etching tank. Objective.
  • An etching apparatus includes an etching tank having a substrate carry-in port and a substrate carry-out port, a transfer device that carries a substrate from the substrate carry-in port toward the substrate carry-out port, and an inside of the etching tank.
  • a nozzle for spraying a reaction gas onto one surface of the substrate transported by the transport device, and an outside air provided in the etching tank and flowing into the etching tank from the substrate carry-in port and the substrate carry-out port Includes an airflow control device that suppresses inflow into a gap between one surface of the substrate and the nozzle.
  • the airflow control device causes the outside air that has flowed into the etching tank from the substrate carry-in port toward the gap, between the substrate carry-in port and the nozzle.
  • a first air passage that is caused to flow in from the provided first air vent, and outside air that has flowed into the etching tank from the substrate carry-out port toward the gap is provided between the substrate carry-out port and the nozzle.
  • a second ventilation path that flows in from the provided second ventilation hole.
  • the etching apparatus can include a connection path that connects the first ventilation path and the second ventilation path.
  • the etching apparatus can include a suction device that sucks outside air flowing into the connection path from the first ventilation path and the second ventilation path.
  • the first air passage is provided so as to close the front of the nozzle when viewed from the substrate carry-in port
  • the second air passage is provided on the substrate carrying port. It can be provided so as to block the front of the nozzle as viewed from the outlet.
  • the etching method which concerns on 1 aspect of this invention conveys a board
  • a first air is provided between the substrate carry-in port and the nozzle, and external air that has flowed into the etching tank from the substrate carry-in port toward the gap.
  • the outside air that has flowed into the etching tank from the substrate carry-in port is prevented from flowing into the gap, and from the substrate carry-out port toward the gap.
  • the outside air that has flowed into the etching tank is caused to flow into the second ventilation path from a second ventilation port provided between the substrate conveyance port and the nozzle, so that the etching is performed from the substrate conveyance port. It is possible to suppress the outside air that has flowed into the tank from flowing into the gap.
  • the outside air that has flowed into the connection path connecting the first ventilation path and the second ventilation path can be sucked.
  • the substrate manufacturing method according to one embodiment of the present invention is a substrate manufacturing method including a step of etching a substrate by the etching method.
  • the substrate according to one aspect of the present invention is a substrate having a first surface and a second surface opposite to the first surface,
  • the average value of the arithmetic average surface roughness of the entire first surface is 0.3 to 1.5 nm, and the average value of the arithmetic average surface roughness of the peripheral portion of the first surface and the first surface
  • the arithmetic average surface roughness of the central portion is different, and the standard deviation of the arithmetic average surface roughness of the entire first surface is 0.06 or less.
  • the size of the substrate may be 1500 mm ⁇ 1500 mm or more.
  • a difference between the arithmetic average surface roughness of the central portion of the first surface and the average value of the arithmetic average surface roughness of the entire first surface is ⁇ 0.13 or more. It may be 0.13 or less.
  • FIG. 1 is a side view schematically showing an etching apparatus according to the first embodiment of the present invention.
  • FIG. 2 is a sectional view of the nozzle of the etching apparatus according to the first embodiment of the present invention.
  • FIG. 3 is a front view of the nozzle and the airflow control device as viewed from the substrate carry-in side.
  • FIG. 4 is a schematic view showing the flow of outside air in the etching tank, and (a) is a view showing the flow of outside air when a first air passage and a second air passage are provided in the vicinity of the nozzle. (B) is a figure which shows the flow of external air when not providing such a ventilation path in the vicinity of a nozzle.
  • FIG. 4 is a schematic view showing the flow of outside air in the etching tank, and (a) is a view showing the flow of outside air when a first air passage and a second air passage are provided in the vicinity of the nozzle.
  • B is a figure which shows the flow of external air when not providing
  • FIG. 5 is a side view showing a part of the substrate manufacturing system including the etching apparatus according to the first embodiment of the present invention.
  • FIG. 6 is a view showing the atmospheric pressure fluctuation distribution around the nozzle when the etching tank does not include the air flow control device, and (a) is a view of the state where the tip of the substrate has reached the vicinity of the nozzle, (B) is a figure of the state in the middle of a board
  • FIG. 7 is a diagram showing a calculation model of numerical simulation regarding the concentration distribution of the reaction gas, (a) shows a calculation model of the space below the substrate in the etching tank, and (b) shows the nozzles in the simulation space. It is the figure which expanded the clearance gap with a board
  • FIG. 8 is a diagram showing the suction pressure dependence of the numerical simulation result regarding the concentration distribution of the reaction gas.
  • FIG. 8A shows the concentration distribution of the reaction gas in the gap in the comparative example before the airflow control device is introduced.
  • FIG. 9 is a diagram showing the suction pressure dependence of the numerical simulation result regarding the concentration distribution of the reaction gas
  • (a) is a diagram showing the calculation result of the comparative example
  • FIG. 1 is a side view schematically showing the etching apparatus 100.
  • FIG. 2 is a cross-sectional view of the nozzle 130.
  • FIG. 3 is a front view of the nozzle and the airflow control device as viewed from the substrate carry-in side.
  • FIG. 4 is a schematic diagram showing the flow of outside air in the etching tank.
  • FIG. 4A is a diagram showing the flow of outside air when the first air passage 141 and the second air passage 142 are provided in the vicinity of the nozzle 130
  • FIG. 4B is the vicinity of the nozzle 130. It is a figure which shows the flow of the external air when not providing such a ventilation path.
  • the flow of outside air is indicated by thick arrows.
  • the etching apparatus 100 includes an etching tank 110, a transfer device 120, a nozzle 130, and an airflow control device 140.
  • the etching apparatus 100 performs chemical processing using atmospheric pressure plasma on one surface (for example, the back surface 510) of the substrate 500. Thereby, one surface of the substrate 500 is roughened.
  • the substrate 500 is a glass substrate used for an electronic device such as a flat panel display such as a liquid crystal display or an organic EL display, organic EL lighting, a solar battery, or a storage battery.
  • the substrate 500 is cut into a rectangle by a manufacturing process of the substrate 500 described later.
  • the size of the substrate 500 is, for example, 2880 mm in the width direction (direction orthogonal to the paper surface of FIG. 1) and 3130 mm in the transport direction (left-right direction in the paper surface of FIG. 1).
  • the thickness of the substrate 500 is, for example, 0.6 mm. Note that the size and thickness of the substrate 500 are not limited to these values.
  • the shape of the substrate 500 is not limited to a rectangular shape, and may be a circular shape or a belt shape.
  • the etching tank 110 has a substrate carry-in port 111 and a substrate carry-out port 112.
  • the substrate carry-in port 111 and the substrate carry-out port 112 are located at the same height as shown in FIG.
  • the substrate carry-in port 111 and the substrate carry-out port 112 have a slit shape extending in the width direction of the substrate 500.
  • the width of the substrate carry-in port 111 and the substrate carry-out port 112 (the length in the direction orthogonal to the paper surface of FIG. 1) is set to a value slightly larger than the width of the substrate 500 so that the substrate 500 can pass through.
  • the height of the substrate carry-in port 111 and the substrate carry-out port 112 (the length in the vertical direction in FIG.
  • the substrate carry-in port 111 and the substrate carry-out port 112 are 5 to 20 mm.
  • the substrate carry-in port 111 and the substrate carry-out port 112 are always open while the substrate 500 is transferred from the substrate carry-in port 111 to the substrate carry-out port 112, for example.
  • the transfer device 120 transfers the substrate 500 from the substrate carry-in port 111 toward the substrate carry-out port 112.
  • the conveyance device 120 is a roller conveyor including a plurality of rollers 121, for example.
  • the plurality of rollers 121 are provided in parallel with each other at an appropriate interval in the transport direction of the substrate 500 and so as to match the heights of the substrate carry-in port 111 and the substrate carry-out port 112.
  • the substrate 500 enters the inside of the etching tank 110 through the substrate carry-in port 111 from the upstream in the carrying direction of the substrate 500, exits the etching tank 110 through the substrate carry-out port 112, and carries the substrate 500.
  • a conveyance path toward the downstream in the direction is formed.
  • the plurality of rollers 121 convey the substrate 500 while supporting the back surface 510. For this reason, a front surface 520 to be described later does not contact the roller 121, and a scratch caused by the roller 121 does not adhere to the front surface 520.
  • the plurality of rollers 121 rotate synchronously by a drive control mechanism (not shown). By rotating the plurality of rollers 121 synchronously in the same direction (clockwise in FIG. 1), the substrate 500 is transported horizontally from the substrate carry-in port 111 toward the substrate carry-out port.
  • the conveying apparatus 120 is not restricted to a roller conveyor, For example, it is realizable by means, such as a belt conveyor and a robot arm.
  • the nozzle 130 sprays a reactive gas on one surface (for example, the back surface 510) of the substrate 500 transported by the transport device 120.
  • the nozzle 130 is provided inside the etching tank 110.
  • the nozzle 130 includes, for example, a gas supply path 132, a first gas suction path 133, and a second gas suction path 134 as shown in FIG.
  • the upper end of the nozzle 130 is planar.
  • a blowing port 132 a of the gas supply path 132, a first suction port 133 a of the first gas suction path 133, and a second suction port 134 a of the second gas suction path 134 are provided.
  • the first suction port 133 a is provided between the blowout port 132 a and the substrate carry-in port 111
  • the second suction port 134 a is provided between the blowout port 132 a and the substrate carry-out port 112.
  • the gas supply path 132, the first gas suction path 133, and the second gas suction path 134 have a uniform cross section in a direction orthogonal to the paper surface of FIG.
  • the blowout port 132a, the first suction port 133a, and the second suction port 134a have a slit shape extending in a direction orthogonal to the paper surface of FIG.
  • the width of the blowout port 132a, the first suction port 133a, and the second suction port 134a (the length in the direction orthogonal to the paper surface of FIG. 2) is the width of the substrate 500 so that the entire surface of the back surface 510 of the substrate 500 can be roughened. It is slightly larger.
  • the gas supply path 132 is connected to a reaction gas generator (not shown) provided outside the etching tank 110.
  • the reactive gas generation device generates a reactive gas from the source gas and supplies the reactive gas to the gas supply path 132.
  • the reaction gas generator is provided with a raw material gas supply unit (not shown).
  • the source gas supply unit supplies source gas, which is a source material for the reaction gas.
  • the source gas includes, for example, a fluorine-based source gas and a carrier gas.
  • the fluorine-based source gas is used to generate a fluorine-based reaction component that reacts with the surface of the substrate 500.
  • the fluorine-based reaction component can be generated by introducing and reacting a fluorine-based source gas and water molecules into plasma.
  • the carrier gas is used for carrying and diluting the fluorine-based source gas and performing plasma discharge.
  • CF 4 is used as the fluorine-based source gas
  • argon is used as the carrier gas.
  • hydrogen fluoride (HF) as an example of a fluorine-type reaction component.
  • the fluorine-based source gas is not limited to this, but other perfluorocarbons such as C 2 F 6 and C 3 F 8, hydrofluorocarbons such as CHF 3 , CH 2 F 2 , and CH 3 F, SF 6 , NF 3 , and XeF 2 Other fluorine-containing compounds such as may be used.
  • the carrier gas is not limited to this, and other inert gas such as helium, neon, or xenon may be used.
  • the source gas includes, for example, water vapor.
  • the source gas supply unit includes a water addition unit that adds water to CF 4 and argon.
  • the water addition unit is, for example, a humidifier that supplies liquid water as saturated water vapor.
  • the amount of water added can be adjusted by adjusting the temperature of the humidifier.
  • the water vapor partial pressure in the raw material gas can be set.
  • the condensation temperature of the fluorine-based reaction component and water vapor generated in the plasma that is, the temperature at which hydrofluoric acid that reacts with the substrate is generated
  • the reactive gas generator is provided with a plasma generator (not shown) connected to the source gas supply unit.
  • the plasma generation unit includes a pair of electrodes.
  • the pair of electrodes are arranged with a passage through which the source gas is supplied.
  • One of the pair of electrodes is connected to a power source, and the other is grounded.
  • an electric field is generated between the pair of electrodes, and discharge is performed.
  • plasma is generated between the pair of electrodes, and the raw material gas is introduced into the plasma, whereby CF 4 and water molecules react to generate hydrogen fluoride that reacts with the surface of the substrate 500. That is, the source gas becomes a reaction gas when introduced into the plasma.
  • the reactive gas is blown to the back surface 510 of the substrate 500 from the blowing port 132a.
  • the top plate 135 is horizontally provided above the nozzle 130 so as to face the upper end of the nozzle 130 as shown in FIGS. After the substrate 500 is carried in from the substrate carry-in port 111, it passes between the upper end of the nozzle 130 and the lower surface of the top plate 135 and is carried out from the substrate carry-out port 112.
  • the distance between the upper end of the nozzle 130 and the lower surface of the top plate 135 is approximately the thickness of the substrate carry-in port 111 and the substrate carry-out port 112 (the length in the vertical direction in FIG. 1) so that the substrate 500 can pass through. Make equal.
  • the reaction gas blown out from the blowing port 132a is a gap 131 between the back surface 510 of the substrate 500 and the nozzle 130 (see FIG. 2). ). While the back surface 510 is exposed to the reaction gas, the back surface 510 is roughened.
  • the arithmetic average surface roughness of the back surface 510 is preferably 0.3 to 1.5 nm.
  • the arithmetic average surface roughness is 0.3 nm or more, peeling electrification hardly occurs when the substrate 500 is peeled from the stage. If the arithmetic average surface roughness is 1.5 nm or less, the roughening treatment does not take time, and the in-plane strength of the substrate 500 does not become insufficient.
  • a plate-like heater (not shown) with adjustable temperature is provided on the lower surface of the top plate 135. With this heater, it is possible to heat a region located immediately below the top plate 135 on the surface 520 opposite to the back surface 510 (hereinafter referred to as “front surface”) 520 of the substrate 500.
  • the width of the heater (the length in the direction orthogonal to the paper surface of FIG. 2) is slightly larger than the width of the substrate 500 so that the entire front surface 520 of the substrate 500 can be heated.
  • the back surface 510 is defined as the first surface
  • the front surface 520 opposite to the first surface is defined as the second surface.
  • the temperature when the substrate 500 is carried into the etching tank 110 and the temperature of the heater of the top plate 135 are set appropriately. Thereby, while the substrate 500 passes over the nozzle 130, the temperature of the back surface 510 can be made lower than the condensation temperature, and the temperature of the front surface 520 can be made higher than the condensation temperature. For this reason, hydrogen fluoride and water vapor are condensed only on the back surface 510 to form hydrofluoric acid. Thereby, even if a part of the reaction gas blown out from the blowout port 132a enters the gap between the top plate 135 and the front surface 520, the substrate 500 is selectively etched only on the back surface 510. Can do. Therefore, the front surface 520 on which the electronic member and the wiring are formed can be kept smooth without being roughened.
  • the first gas suction path 133 and the second gas suction path 134 are connected to the gas recovery device 600 outside the etching tank 110 (see FIG. 1).
  • the gas recovery apparatus 600 includes a normal suction unit, for example, a rotary pump.
  • the reactive gas supplied to the gap 131 is sucked from the first suction port 133a and the second suction port 134a, and is recovered by the gas recovery device 600 through the first gas suction path 133 and the second gas suction path 134. .
  • the airflow control device 140 is provided inside the etching tank 110 as shown in FIG.
  • the outside air that has flowed into the etching tank 110 from the substrate carry-in port 111 and the substrate carry-out port 112 is a gap 131 between the one surface (the back surface 510 in this embodiment) and the nozzle 130 ( (See FIG. 2).
  • the airflow control device 140 includes, for example, a first air passage 141 and a second air passage 142.
  • the first ventilation path 141 has a first ventilation hole 141 c between the substrate carry-in port 111 and the nozzle 130. As shown in FIG. 4A, the first air passage 141 allows outside air that has flowed into the etching tank 110 from the substrate carry-in port 111 toward the gap 131 to flow from the first air vent 141c. As a result, the first air passage 141 prevents the outside air that has flowed into the etching tank 110 from the substrate carry-in port 111 from flowing into the gap 131.
  • the first air passage 141 includes, for example, a first back plate 141a and a first front plate 141b in order from the side close to the nozzle 130.
  • the first back plate 141a and the first front plate 141b are installed with an interval of 50 to 100 mm, for example.
  • the first back plate 141a and the first front plate 141b are connected by a first side plate (not shown).
  • the widths of the first back plate 141 a and the first front plate 141 b are slightly longer than the width of the substrate 500.
  • the upper part of the space surrounded by the first back plate 141a, the first front plate 141b, and the first side plate is open, and this open upper space serves as the first vent 141c.
  • the first back plate 141 a, the first front plate 141 b, and the first side plate are floors of the etching tank 110 so as to close the front of the nozzle 130 when viewed from the substrate carry-in port 111. It is provided from the surface to a height close to the roller 121. Accordingly, the first air passage 141 functions as a shielding unit that shields the outside air flowing into the gap 131 from the substrate carry-in port 111.
  • the first front plate 141b is lower in height than the first back plate 141a.
  • the first ventilation path 141 has a box shape that is long in the width direction in which the first ventilation hole 141c is opened toward the substrate carry-in port 111 side. For this reason, the outside air that has flowed in from the substrate carry-in port 111 is likely to flow into the first vent 141c.
  • the upper end portion of the first back plate 141 a is installed so as to enter between two adjacent rollers 121, for example.
  • the upper end portion of the first back plate 141a is installed at a position as high as possible without interfering with the substrate 500 transported by the transport device 120. Thereby, it can suppress that the external air which flowed into the inside of the etching tank 110 from the board
  • the distance between the back surface 510 of the substrate 500 and the upper end portion of the first back plate 141a is set to be 1 to 10 mm.
  • the position of the upper end portion of the first front plate 141b is set, for example, at a position 50 to 100 mm lower than the position of the upper end portion of the first back plate 141a.
  • a first exhaust port 143 is opened on the floor surface of the etching tank 110 where the first air passage 141 is installed.
  • the first exhaust port 143 is provided in a slit shape in the width direction of the first air passage 141, but the shape of the first exhaust port 143 is not limited thereto.
  • the second ventilation path 142 has a second ventilation hole 142 c between the substrate carry-out port 112 and the nozzle 130. As shown in FIG. 4A, the second ventilation path 142 allows the outside air that has flowed into the etching tank 110 from the substrate carry-out port 112 toward the gap 131 to flow from the second ventilation hole 142c. Thereby, the second ventilation path 142 suppresses the outside air that has flowed into the etching tank 110 from the substrate carry-out port 112 from flowing into the gap 131.
  • the second air passage 142 includes, for example, a second back plate 142a and a second front plate 142b in order from the side close to the nozzle 130.
  • the second back plate 142a and the second front plate 142b are installed with an interval of 50 to 100 mm, for example.
  • the second back plate 142a and the second front plate 142b are connected by a second side plate (not shown).
  • the widths of the second back plate 142 a and the second front plate 142 b are slightly longer than the width of the substrate 500.
  • the upper part of the space surrounded by the second back plate 142a, the second front plate 142b, and the second side plate is opened, and the opened upper space serves as the second vent 142c.
  • the second back plate 142 a, the second front plate 142 b, and the second side plate are viewed from the substrate carry-out port 112 so as to block the front of the nozzle 130.
  • the second ventilation path 142 functions as a shielding unit that shields the outside air flowing into the gap 131 from the substrate carry-out port 112.
  • the second front plate 142b is lower in height than the second back plate 142a. Accordingly, the second ventilation path 142 has a box shape that is long in the width direction in which the second ventilation hole 142c is opened toward the substrate carry-out port 112 side. For this reason, the outside air that has flowed in from the substrate carry-out port 112 is likely to flow into the second vent 142c.
  • the upper end portion of the second back plate 142 a is installed so as to enter between two adjacent rollers 121, for example.
  • the upper end portion of the second back plate 142a is installed at a position as high as possible without interfering with the substrate 500 transported by the transport device 120. Thereby, it can suppress that the external air which flowed into the inside of the etching tank 110 from the board
  • the distance between the back surface 510 of the substrate 500 and the upper end portion of the second back plate 142a is set to be 1 to 10 mm.
  • the position of the upper end portion of the second front plate 142b is set, for example, at a position lower by 50 to 100 mm than the position of the upper end portion of the second rear plate 142a.
  • a second exhaust port 144 is opened on the floor surface of the etching tank 110 where the second air passage 142 is installed.
  • the second exhaust port 144 is provided in a slit shape in the width direction of the second air passage 142, but the shape of the second exhaust port 144 is not limited thereto.
  • the first ventilation path 141 and the second ventilation path 142 are connected by a connection path 150, for example, outside the etching bath 110, as shown in FIG.
  • the connection path 150 is connected to the first exhaust port 143 provided at the bottom portion of the first air passage 141 and the second exhaust port 144 provided at the bottom portion of the second air passage 142. It communicates with the space inside the air passage 141 and the space inside the second air passage 142.
  • the first ventilation path 141, the connection path 150, and the second ventilation path 142 form a detour for detouring the outside air toward the gap 131.
  • the outside air that has flowed into the etching tank 110 from the substrate carry-in port 111 or the substrate carry-out port 112 flows out to the substrate carry-out port 112 side or the substrate carry-in port 111 side through this bypass. Therefore, the outside air that has flowed into the etching tank 110 is prevented from flowing directly into the gap 131.
  • a suction device 160 is connected to the connection path 150.
  • the suction device 160 includes a normal suction means such as a rotary pump. By operating the suction device 160, the gas inside the connection path 150 and the gas inside the first ventilation path 141 and the second ventilation path 142 can be exhausted.
  • the suction device 160 does not need to be operated at all times, and may be operated as necessary, such as when the outside air flowing into the etching tank 110 increases.
  • FIG. 5 is a side view showing a part of the substrate manufacturing system 1000.
  • reference numeral 1030 corresponds to the etching bath 110 shown in FIG.
  • the reference numerals shown in FIG. 1 are shown alongside the reference numerals of the components constituting the etching bath 1030.
  • the substrate manufacturing system 1000 includes a first cleaning tank 1010, a first buffer tank 1020, an etching tank 1030, a second buffer tank 1040, a second cleaning tank 1050, and a transfer device 1070.
  • the transfer device 1070 transfers the substrate 500 from the left side to the right side in the drawing.
  • the conveyance device 1070 is, for example, a roller conveyor that includes a plurality of rollers 1071.
  • the plurality of rollers 1071 sequentially pass through the first cleaning tank 1010, the first buffer tank 1020, the etching tank 1030, the second buffer tank 1040, and the second cleaning tank 1050 from the upstream side of the first cleaning tank 1010.
  • a conveyance path toward the downstream side of the second cleaning tank 1050 is formed.
  • an apparatus for forming and polishing the substrate 500 is provided on the upstream side of the first cleaning tank 1010, for example.
  • an apparatus for drying and inspecting the substrate 500 is provided on the downstream side of the second cleaning tank 1050.
  • First cleaning tank 1010, first buffer tank 1020, second buffer tank 1040, and second cleaning tank 1050 each include a substrate carry-in port and a substrate carry-out port.
  • the substrate carry-in port and the substrate carry-out port of each tank are provided at the same height and the same size as the substrate carry-in port 1031 and the substrate carry-out port 1032 of the etching tank 1030.
  • the substrate carry-out port of each tank is sequentially connected to the substrate carry-in port of the tank adjacent to the downstream side in the transport direction.
  • the substrate 500 is formed into a ribbon shape by, for example, a float process, and then cut into a substrate 500 having a desired size, a chamfering step of chamfering the end surface of the substrate 500, and a surface of the substrate 500 (front surface 520). It is conveyed to the 1st washing tank 1010 through the polish process which polishes.
  • a polishing method for example, a method in which slurry is supplied to a substrate and polished is used.
  • the slurry is a dispersion liquid in which abrasive grains are dispersed in a liquid such as water or an organic solvent.
  • cerium oxide is used as the abrasive grains.
  • Polished substrate 500 is transferred to first cleaning tank 1010 by transfer device 1070.
  • the abrasive grains are removed from the surface of the substrate 500.
  • the substrate 500 is first shower-washed, and the abrasive grains on the surface of the substrate 500 are washed away with water. Thereafter, the substrate 500 is subjected to slurry cleaning.
  • Slurry cleaning is a cleaning method in which abrasive grains that could not be removed by shower cleaning are removed using a cleaning means such as a disk brush while spraying a cleaning slurry from a nozzle to a substrate.
  • a dispersion liquid in which cerium oxide, calcium carbonate, or magnesium carbonate is dispersed in a liquid such as water or an organic solvent is used.
  • the substrate 500 is unloaded from the first cleaning tank 1010 by the transfer device 1070 and loaded into the first buffer tank 1020.
  • the first buffer tank 1020 is provided to prevent the reaction gas from leaking from the substrate carry-in port 1031 to the first cleaning tank 1010. Accordingly, the cleaning step performed in the first cleaning tank 1010 is not contaminated with the reaction gas.
  • the first buffer tank 1020 has, for example, a fan filter unit FFU1 on the ceiling and an exhaust port EXH1 on the floor.
  • the fan filter unit FFU1 filters the outside air and introduces it into the first buffer tank 1020 to bring the first buffer tank 1020 into a positive pressure state.
  • the outside air introduced by the fan filter unit FFU1 is discharged from the exhaust port EXH1 to the outside of the first buffer tank 1020 having a relatively low pressure together with dust and gas inside the first buffer tank 1020.
  • the substrate 500 is unloaded from the first buffer tank 1020 by the transfer device 1070 and is loaded into the etching tank 1030.
  • the reaction gas is sprayed from the nozzle 1080 (130 in FIG. 1) to the back surface 510 of the substrate 500, and the back surface 510 of the substrate 500 is roughened.
  • the roughened substrate 500 is unloaded from the etching tank 1030 by the transfer device 1070 and is loaded into the second buffer tank 1040.
  • the second buffer tank 1040 is provided to prevent the reaction gas from leaking from the substrate carry-out port 1032 to the second cleaning tank 1050. Thereby, the cleaning step performed in the second cleaning tank 1050 is not contaminated with the reaction gas.
  • the second buffer tank 1040 has, for example, a fan filter unit FFU2 on the ceiling and an exhaust port EXH2 on the floor surface.
  • the fan filter unit FFU2 filters the outside air and introduces it into the second buffer tank 1040 to bring the second buffer tank 1040 into a positive pressure state.
  • the outside air introduced by the fan filter unit FFU2 is discharged from the exhaust port EXH2 to the outside of the second buffer tank 1040 having a relatively low pressure together with dust and gas inside the second buffer tank 1040.
  • the substrate 500 is unloaded from the second buffer tank 1040 by the transfer device 1070 and is loaded into the second cleaning tank 1050.
  • the second cleaning tank 1050 includes a high pressure shower 1051.
  • both surfaces of the substrate 500 are cleaned to remove glass cullet, etching by-products, and the like generated by the roughening.
  • the cleaning method is not particularly limited, and examples include high pressure shower cleaning, brushing cleaning, ultrasonic cleaning, or a combination thereof.
  • the substrate 500 that has been cleaned is unloaded from the second cleaning tank 1050 by the transfer device 1070 and is subjected to a drying process or an inspection process.
  • FIG. 6 is a view showing the atmospheric pressure fluctuation distribution around the nozzle 1080 when the etching tank 1030 does not include the airflow control device 140.
  • the back surface 510 of the substrate 500 is roughened by the reaction gas blown out from the nozzle 130.
  • the roughness at each location in the back surface 510 of the substrate 500 is determined by two factors: the concentration of the reaction gas to which the location is exposed and the accumulated time at which the location is exposed to the reaction gas. These factors greatly fluctuate due to airflow disturbance generated in the gap 131 between the substrate 500 and the nozzle 130. The disturbance of the airflow is caused by the outside air flowing into the etching tank 110 through the substrate carry-in port 111 and the substrate carry-out port 112.
  • the inflow of outside air is caused by a pressure difference between the first buffer tank 1020 and the second buffer tank 1040 shown in FIG.
  • the pressure difference is remarkably generated when the size of the substrate 500 is large enough to reach the length of a plurality of tanks.
  • the degree of inflow of outside air varies with time as the substrate 500 is transported.
  • the first cleaning tank 1010 for example, shower cleaning and slurry cleaning are performed until the substrate 500 is unloaded. However, even if these devices are operated, there is no great fluctuation in the global atmospheric pressure distribution inside the first cleaning tank 1010.
  • high-pressure shower cleaning by the high-pressure shower 1051 is performed.
  • the high-pressure shower 1051 is activated, the global atmospheric pressure distribution inside the second cleaning tank 1050 varies greatly. This change causes the pressure inside the adjacent second buffer tank 1040 to change via the substrate carry-in port of the second cleaning tank 1050.
  • a state occurs in which the substrate 500 straddles the etching tank 1030 to the second cleaning tank 1050.
  • the atmospheric pressure in the first buffer tank 1020 and the second buffer tank 1040 varies depending on the relative position between the substrate 500 and the etching tank 1030.
  • a pressure distribution is generated inside the etching tank 1030, and an airflow is generated before and after the nozzle 1080.
  • the substrate 500 having a large size is equal to or longer than the length from the blowout port 132a of the nozzle 1080 to the substrate carry-in port of the first buffer tank 1020 in the transfer direction of the substrate 500, or from the blowout port 132a of the nozzle 1080 to the second buffer tank. It means a substrate that is longer than the length up to 1040 substrate exit.
  • the first buffer tank 1020 is divided into upper and lower spaces by the substrate 500.
  • the fan filter unit FFU1 introduces outside air, so that the space above the first buffer tank 1020 becomes positive pressure. Since the introduced outside air is blocked by the substrate 500, the space below the first buffer tank 1020 has a relatively negative pressure.
  • the entire space of the second buffer tank 1040 becomes positive pressure when the fan filter unit FFU2 introduces outside air.
  • a space between the substrate carry-in port 1031 and the nozzle 1080 is divided by the substrate 500.
  • the lower space of the substrate 500 is connected to the lower space of the first buffer tank 1020 via the substrate carry-in port 1031, it becomes negative pressure.
  • the space between the nozzle 1080 and the substrate carry-out port 1032 is connected to the entire space of the second buffer tank 1040 via the substrate carry-out port 1032, the pressure is positive.
  • an air flow from the substrate carry-out port 1032 toward the substrate carry-in port 1031 is generated inside the etching tank 1030.
  • the fan filter unit FFU1 introduces outside air because the substrate 500 does not exist in the first buffer tank 1020. By doing so, the whole space of the first buffer tank 1020 becomes positive pressure.
  • the second buffer tank 1040 is divided into upper and lower spaces by the substrate 500.
  • the fan filter unit FFU2 introduces outside air, so that the space above the second buffer tank 1040 becomes positive pressure. Since the introduced outside air is blocked by the substrate 500, the space below the second buffer tank 1040 has a relatively negative pressure.
  • the space between the nozzle 1080 and the substrate carry-out port 1032 is divided by the substrate 500.
  • the lower space of the substrate 500 is connected to the lower space of the second buffer tank 1040 via the substrate carry-out port 1032, it becomes negative pressure.
  • the space between the nozzle 1080 and the substrate carry-in port 1031 is connected to the entire space of the first buffer tank 1020 via the substrate carry-in port 1031, the pressure is positive.
  • an air flow from the substrate carry-in port 1031 toward the substrate carry-out port 1032 is generated inside the etching tank 1030.
  • the substrate 500 passes through the space between the first buffer tank 1020 and the second buffer tank 1040.
  • various atmospheric pressure distributions are realized.
  • the airflow control device 140 when the airflow control device 140 is not provided in the etching tank 110, the outside air flowing in from the substrate carry-in port 111 and the substrate carry-out port 112 is not substantially blocked and is not blocked.
  • the gap 131 between the back surface 510 of the 500 and the nozzle 130 is reached. For this reason, the concentration distribution of the reaction gas filling the gap 131 is directly affected by the disturbance of the airflow. As a result, non-uniformity occurs in the roughness of the back surface 510 of the substrate 500.
  • the air flow control device 140 when the air flow control device 140 is provided in the etching tank 110, the outside air that has flowed in from the substrate carry-in port 111 and the substrate carry-out port 112 passes through the first air passage. 141, the connection path 150, and the second ventilation path 142 are prevented from flowing into the detour and reaching the gap 131 directly. Further, since the pressure inside the first air passage 141 and the second air passage 142 tends to be always equal by the connection passage 150, the pressure between the first buffer tank 1020 and the second buffer tank 1040 is constant. The influence of the time variation of the difference is also mitigated. Thereby, the concentration distribution of the reaction gas filling the gap 131 is less affected by the disturbance of the air flow, and the uniformity of the roughness of the back surface 510 of the substrate 500 is improved.
  • the internal pressure of the connection path 150 is always maintained at a negative pressure (for example, ⁇ 1 to ⁇ 2 Pa).
  • a pressure difference for example, about ⁇ 3 Pa at the maximum
  • the flow of the outside air is almost the same as the substrate carry-in port 111 and the first vent port. 141c and between the substrate carry-out port 112 and the second vent 142c. Therefore, the influence of the inflow of outside air is reduced in the gap 131 between the back surface 510 of the substrate 500 and the nozzle 130. Since the first vent 141c and the second vent 142c are opened toward the side opposite to the nozzle 130, the air flow in the gap 131 is greatly disturbed by operating the suction device 160. None happen.
  • the substrate carry-in port 111 of the etching tank 110 having the substrate carry-in port 111 and the substrate carry-out port 112 is directed toward the substrate carry-out port 112. Then, the substrate 500 is conveyed, and a reactive gas is sprayed from the nozzle 130 onto the back surface 510 of the substrate 500. The reactive gas is blown while suppressing the outside air flowing into the etching tank 110 from the substrate carry-in port 111 and the substrate carry-out port 112 from flowing into the gap 131 between the back surface 510 of the substrate 500 and the nozzle 130.
  • etching is performed from the substrate carry-in port 111 toward the gap 131 as shown in FIG.
  • the outside air that has flowed into the tank 110 is caused to flow into the first air passage 141 from the first air vent 141 c provided between the substrate carry-in port 111 and the nozzle 130.
  • the etching tank 110 is directed from the substrate carry-out port 112 toward the gap 131 as shown in FIG.
  • the outside air that has flowed into the air flows into the second air passage 142 from the second air vent 142 c provided between the substrate carry-out port 112 and the nozzle 130.
  • the first air passage 141 and the second air passage 142 are connected to the common suction device 160, but the first air passage 141 and the second air passage 142 are differently sucked. It may be connected to a device.
  • the outside air flowing into the etching tank 110 from the substrate carry-in port 111 and the outside air flowing into the etching tank 110 from the substrate carry-out port 112 are exhausted independently.
  • the outside air that has flowed into the etching tank 110 can be prevented from flowing into the gap 131 between the back surface 510 of the substrate 500 and the nozzle 130. As a result, it is possible to suppress roughness non-uniformity on the back surface 510 of the substrate 500.
  • a cutting step of cutting the substrate 500 of a desired size, and a chamfering step of chamfering the end surface of the substrate 500 In addition, a step of etching the back surface 510 by the etching method described in the above embodiment is included in the substrate 500 that has undergone the polishing step of polishing the surface (front surface 520) of the substrate 500. As a result, it is possible to obtain the substrate 500 in which the unevenness of roughness on the back surface 510 is suppressed.
  • the average value of the arithmetic average surface roughness of the entire back surface 510 is 0.3 to 1.5 nm, and the average value of the arithmetic average surface roughness of the peripheral surface of the back surface 510 is And the arithmetic average surface roughness of the central portion of the back surface 510 are different, and the standard deviation of the arithmetic average surface roughness of the entire back surface 510 is 0.06 or less.
  • the central region is the central portion
  • the other peripheral regions are the peripheral portions.
  • the peripheral edge is an area in a range of 500 mm from the side.
  • the average value of the arithmetic average surface roughness of the peripheral portion is the average value of the arithmetic average surface roughness of the eight regions excluding the central portion.
  • the arithmetic average surface roughness of the central portion and the peripheral portion is not the same, but the variation of the arithmetic average surface roughness of the entire back surface 510 is 0.06 or less in terms of the standard deviation, so that the peeling charge is effective. It is possible to suppress the damage to the substrate due to peeling charging.
  • the arithmetic average surface roughness of the central portion may be higher than the arithmetic average surface roughness of the peripheral portion.
  • the size of the substrate is 1500 mm ⁇ 1500 mm or more because the amount of peeling charge is more effectively suppressed. Furthermore, it is more effective that the size of the substrate is 2000 mm ⁇ 2000 mm or more.
  • the peel charge amount is It can suppress more effectively.
  • FIG. 7 is a diagram showing a calculation model and an example of a calculation result of a numerical simulation related to the concentration distribution of the reaction gas.
  • FIG. 8 and FIG. 9 are views showing the pressure absorption dependency of the numerical simulation result regarding the concentration distribution of the reaction gas.
  • FIG. 7 shows a calculation model of numerical simulation related to the concentration distribution of the reaction gas.
  • ANSYS registered trademark
  • FIG. 7A shows a calculation model of the space 700 below the substrate 750 in the etching tank.
  • the first air passage (air flow control device) 741 is provided on the upstream side (left side in the drawing) of the substrate 750 with respect to the nozzle 730, and the second air passage on the downstream side (right side). (Airflow control device) 742 is provided.
  • the first air passage 741 and the second air passage 742 are not provided.
  • the pressure at the substrate carry-in port 711 is equal to the pressure P LD of the first buffer tank.
  • the pressure at the substrate carry-out port 712 is equal to the atmospheric pressure P NT of the second buffer tank.
  • the pressure inside the first air passage 741 and the second air passage 742 is equal to P BB (suction pressure of the suction device) connected path of pressure.
  • FIG. 7B is an enlarged view of the gap between the nozzle 730 and the substrate 750 in the simulation space.
  • the distance d D of the gap 731 was set to 2 to 5 mm.
  • an appropriate value was selected for each location in the simulation space within the range of 0.1 to 4 mm.
  • the reactive gas is blown into the gap 731 through the gas supply path 732 and from the blowout port 732a.
  • the reaction gas is sucked into the first gas suction path 733 from the first suction port 733a. Further, the reaction gas is sucked from the second suction port 734a to the second gas suction path 734.
  • a boundary condition that the inflow rate of the reaction gas in the gas supply path 732 has a constant value is set.
  • a boundary condition was set such that the internal pressures of the first gas suction path 733 and the second gas suction path 734 had a constant negative value.
  • the reaction gas inflow speed of the gas supply path 732 was set to 0.07 m / s. Further, the pressure inside the first gas suction path 733 was set to -1.9 Pa, and the pressure inside the second gas suction path 734 was set to -1.9 Pa.
  • the substrate 750 is conveyed from left to right (in the direction of the arrow shown in FIG. 7B).
  • a moving boundary condition is set such that the back surface 751 of the substrate 750 has a constant speed in the right direction.
  • the moving speed of the back surface 751 of the substrate 750 is set to 167 mm / s.
  • the concentration distribution of the reaction gas in the gap 731 was calculated by changing the conditions.
  • the changing conditions are the pressure P LD of the first buffer tank, the pressure P NT of the second buffer tank, and the pressure (suction pressure of the suction device) P BB of the connection path.
  • the concentration distribution of the reaction gas in the gap 731 checks whether the maximum value is how changes.
  • the difference between P LD and P NT is considered to correspond to the magnitude of the flow of outside air flowing into the etching bath. Therefore, it can be understood from this simulation how sensitively the reaction gas concentration distribution in the gap 731 reacts to the inflow of outside air.
  • the roughness of the back surface 751 of the substrate 750 is determined by two factors: the concentration of the reaction gas to which the back surface 751 of the substrate 750 is exposed and the accumulated time of exposure to the reaction gas.
  • the accumulated time is mainly determined by the speed at which the substrate 750 is transported.
  • the speed at which the substrate 750 is conveyed is set to a constant value of 167 mm / s.
  • the roughness of the back surface 751 of the substrate 750 is mainly determined by the maximum value of the concentration distribution (the roughness increases as the maximum value increases). Therefore, it can be understood from this simulation how strongly the roughness of the back surface 751 of the substrate 750 is influenced by the inflow of outside air.
  • FIG. 8A shows an example of the result of calculating the concentration distribution of the reaction gas in the gap 731 in the comparative example before the airflow control device is introduced.
  • the horizontal axis (m)) is the position in the nozzle 730, and the vertical axis ([HF] (ppm)) is the concentration of the reaction gas.
  • the position in the nozzle 730 is indicated by coordinates where the blowout port 732a is the origin, the first suction port 733a side is negative, and the second suction port 734a side is positive. Reflecting that the substrate 750 is transported from the left to the right in the figure, the reaction gas is also dragged by the substrate 750 and has a concentration distribution on the right side (Position> 0) of the blowout port 732a.
  • a plurality of concentration distribution curves are obtained corresponding to each combination of P LD and P NT described above.
  • the meaning of the legend is as follows.
  • the peak tends to be high when P LD ⁇ P NT , and the peak tends to be low when P LD > P NT .
  • the position of the peak is not substantially changed and is present in the vicinity of the second suction port 734a.
  • the size of the range in which the peak height fluctuates (hereinafter, “peak Focus on “variation range”).
  • the magnitude of the peak fluctuation width corresponds to the magnitude of the influence of the inflow of outside air on the roughening of the substrate 750.
  • the horizontal axis, vertical axis, and legend are the same as in FIG.
  • the peak fluctuation widths are 272 ppm, 114 ppm, 75 ppm, and 23 ppm, respectively.
  • ⁇ P P LD ⁇ P NT
  • the vertical axis represents the peak value ([HF] max (ppm)) of each concentration distribution.
  • FIG. 9A shows the calculation result of the comparative example.
  • the numbers given to the data points in the figure correspond to the following respectively.
  • the concentration distribution of the reaction gas in the gap is made a steady distribution that does not depend on the time variation of the pressure in the first buffer tank and the second buffer tank. be able to. This suggests that the uniformity of roughness can be easily improved by operating the suction device.
  • Tables 1 and 2 show the results of measuring the in-plane distribution of the roughness of the roughened substrate (arithmetic average surface roughness Ra (JIS B0601-2013)) with an atomic force microscope.
  • Table 1 shows the measurement results when the air flow control device of the present invention is not introduced into the etching tank.
  • Table 2 shows the measurement results when the airflow control device of the present invention is introduced into the etching tank.
  • the production conditions are as follows.
  • Etching tank size 850 mm
  • substrate alkali-free glass (product name: AN100, manufactured by Asahi Glass Co., Ltd.), substrate size: width 2880 mm ⁇ transport direction length 3130 mm, substrate transport speed: 10 m / min, reaction gas composition: CF 4 , N 2 , water vapor, reactive gas discharge flow rate at nozzle part: 0.07 m / sec.
  • the measurement points are 9 points in total, 3 rows in the width direction of the substrate and 3 columns in the transport direction of the substrate.
  • the columns of measurement points are arranged in order along the width direction of the substrate at positions of 500 mm from the left end, the center, and 500 mm from the right end (hereinafter, “first column”, “second column”, “ 3rd column ").
  • the rows of measurement points are arranged in the order of 500 mm from the front end, the center, and 500 mm from the rear end along the substrate transport direction (hereinafter referred to as “first row”, “second row”, “ 3rd line ").
  • Tables 1 and 2 the arithmetic average surface roughness Ra (unit: nm) at each measurement point is shown in a matrix format.
  • Each column in Table 1 and Table 2 corresponds to the first column, the second column, and the third column of measurement points in order from the left.
  • Each row in Table 1 and Table 2 corresponds to the first row, the second row, and the third row of measurement points in order from the top.
  • the average value of Ra was 0.43
  • the standard deviation was 0.073
  • the difference between Ra and the average value at the center of the substrate was ⁇ 0.144.
  • the average value of Ra was 0.45 and the standard deviation was 0.057
  • the difference between Ra and the average value at the center of the substrate was +0.11.
  • the measurement of the peel charge amount was performed by the following method. First, a sample having a width of 410 mm and a length of 510 mm is cut out from the roughened substrate. Next, the sample is placed on the vacuum suction stage for a certain time. The sample is peeled off from the vacuum suction stage using a lift pin. The charge amount of the sample immediately after peeling was measured with a surface potentiometer (product name: MODEL 341B, manufactured by Trek Japan).
  • Example 1 is a glass substrate which has been roughened using an etching apparatus that does not include the airflow control device of the present invention.
  • Comparative Example 2 is a commercially available glass substrate.
  • the manufacturing conditions for the examples and comparative example 1 are as follows.
  • Etching tank size 850 mm
  • substrate alkali-free glass (product name: AN100, manufactured by Asahi Glass Co., Ltd.), substrate size: width 2880 mm ⁇ transport direction length 3130 mm, substrate transport speed: 10 m / min, reaction gas composition: CF 4 , N 2 , water vapor, reactive gas discharge flow rate at nozzle part: 0.07 m / sec.
  • the charge amount of the example is reduced as compared with Comparative Example 1 and Comparative Example 2. As shown in Tables 1 and 2, this is because the uniformity of the roughening is improved by performing the roughening with the etching apparatus according to the present invention.
  • the concentration distribution of the reaction gas in the gap between the surface to be roughened of the substrate and the nozzle is determined by the pressure fluctuation in the first buffer tank and the second buffer tank. Therefore, it can be a substantially steady distribution. Thereby, the nonuniformity of the roughness in the back surface of a board
  • substrate can be suppressed. As a result, the amount of peeling charge of the substrate can be reduced.
  • DESCRIPTION OF SYMBOLS 100 ... Etching apparatus, 110 ... Etching tank, 111 ... Substrate carry-in port, 112 ... Substrate carry-out port, 120 ... Transfer device, 130 ... Nozzle, 140 ... Airflow control device, 141 ... First air passage, 141c ... First Ventilation hole, 142 ... second ventilation path, 142c ... second ventilation hole, 150 ... connection path, 160 ... suction device, 500 ... substrate

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CN109843822A (zh) * 2016-11-16 2019-06-04 日本电气硝子株式会社 玻璃基板的制造方法
CN109963820A (zh) * 2016-11-16 2019-07-02 日本电气硝子株式会社 玻璃基板的制造装置及制造方法
WO2019165160A1 (en) * 2018-02-22 2019-08-29 Corning Incorporated Glass sheets with reduced electrostatic charge and methods of producing the same
CN111071981A (zh) * 2019-10-24 2020-04-28 广东石油化工学院 一种阶梯型微纳米尺度槽道模型及其制备方法

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