WO2015152425A1 - 透明電極、及び有機電子デバイス - Google Patents
透明電極、及び有機電子デバイス Download PDFInfo
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- WO2015152425A1 WO2015152425A1 PCT/JP2015/060765 JP2015060765W WO2015152425A1 WO 2015152425 A1 WO2015152425 A1 WO 2015152425A1 JP 2015060765 W JP2015060765 W JP 2015060765W WO 2015152425 A1 WO2015152425 A1 WO 2015152425A1
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- transparent electrode
- conductive polymer
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- carbon fiber
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- 229920000049 Carbon (fiber) Polymers 0.000 claims abstract description 147
- 239000004917 carbon fiber Substances 0.000 claims abstract description 147
- 229920001940 conductive polymer Polymers 0.000 claims abstract description 127
- 239000010410 layer Substances 0.000 claims description 216
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 99
- 239000000758 substrate Substances 0.000 claims description 99
- 229910052751 metal Inorganic materials 0.000 claims description 70
- 239000002184 metal Substances 0.000 claims description 69
- 239000002346 layers by function Substances 0.000 claims description 54
- 238000010248 power generation Methods 0.000 claims description 35
- 238000006243 chemical reaction Methods 0.000 claims description 24
- 238000007789 sealing Methods 0.000 claims description 12
- 229920003023 plastic Polymers 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 73
- 238000000034 method Methods 0.000 description 60
- 239000011247 coating layer Substances 0.000 description 52
- 238000007747 plating Methods 0.000 description 34
- 239000011248 coating agent Substances 0.000 description 32
- 238000000576 coating method Methods 0.000 description 32
- 229920005989 resin Polymers 0.000 description 30
- 239000011347 resin Substances 0.000 description 30
- 239000004815 dispersion polymer Substances 0.000 description 29
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 26
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 26
- 238000002834 transmittance Methods 0.000 description 25
- 238000012360 testing method Methods 0.000 description 24
- -1 polyparaphenylene Polymers 0.000 description 19
- 239000006185 dispersion Substances 0.000 description 17
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 16
- 239000000049 pigment Substances 0.000 description 16
- 239000010953 base metal Substances 0.000 description 15
- 238000011282 treatment Methods 0.000 description 14
- 229920000877 Melamine resin Polymers 0.000 description 13
- 239000002070 nanowire Substances 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- 239000010409 thin film Substances 0.000 description 13
- 229920001225 polyester resin Polymers 0.000 description 12
- 239000004645 polyester resin Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 11
- 230000003449 preventive effect Effects 0.000 description 11
- 238000003860 storage Methods 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 238000001035 drying Methods 0.000 description 10
- 230000005525 hole transport Effects 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- 230000007423 decrease Effects 0.000 description 8
- 239000004640 Melamine resin Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000004094 surface-active agent Substances 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 150000007974 melamines Chemical class 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 239000004925 Acrylic resin Substances 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 4
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910000831 Steel Inorganic materials 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 229920000547 conjugated polymer Polymers 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000010959 steel Substances 0.000 description 4
- 229920001187 thermosetting polymer Polymers 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- FKTHNVSLHLHISI-UHFFFAOYSA-N 1,2-bis(isocyanatomethyl)benzene Chemical compound O=C=NCC1=CC=CC=C1CN=C=O FKTHNVSLHLHISI-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 229920003180 amino resin Polymers 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000004132 cross linking Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229920001228 polyisocyanate Polymers 0.000 description 3
- 239000005056 polyisocyanate Substances 0.000 description 3
- 150000007519 polyprotic acids Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 150000005846 sugar alcohols Polymers 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 3
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 2
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- KWIUHFFTVRNATP-UHFFFAOYSA-N Betaine Natural products C[N+](C)(C)CC([O-])=O KWIUHFFTVRNATP-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 239000005057 Hexamethylene diisocyanate Substances 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- KWIUHFFTVRNATP-UHFFFAOYSA-O N,N,N-trimethylglycinium Chemical compound C[N+](C)(C)CC(O)=O KWIUHFFTVRNATP-UHFFFAOYSA-O 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 229960003237 betaine Drugs 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 2
- 238000007606 doctor blade method Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000010422 painting Methods 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- LRXTYHSAJDENHV-UHFFFAOYSA-H zinc phosphate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LRXTYHSAJDENHV-UHFFFAOYSA-H 0.000 description 2
- 229910000165 zinc phosphate Inorganic materials 0.000 description 2
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 1
- XEFUJGURFLOFAN-UHFFFAOYSA-N 1,3-dichloro-5-isocyanatobenzene Chemical compound ClC1=CC(Cl)=CC(N=C=O)=C1 XEFUJGURFLOFAN-UHFFFAOYSA-N 0.000 description 1
- VZXPHDGHQXLXJC-UHFFFAOYSA-N 1,6-diisocyanato-5,6-dimethylheptane Chemical compound O=C=NC(C)(C)C(C)CCCCN=C=O VZXPHDGHQXLXJC-UHFFFAOYSA-N 0.000 description 1
- TUSDEZXZIZRFGC-UHFFFAOYSA-N 1-O-galloyl-3,6-(R)-HHDP-beta-D-glucose Natural products OC1C(O2)COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC1C(O)C2OC(=O)C1=CC(O)=C(O)C(O)=C1 TUSDEZXZIZRFGC-UHFFFAOYSA-N 0.000 description 1
- QLOKJRIVRGCVIM-UHFFFAOYSA-N 1-[(4-methylsulfanylphenyl)methyl]piperazine Chemical compound C1=CC(SC)=CC=C1CN1CCNCC1 QLOKJRIVRGCVIM-UHFFFAOYSA-N 0.000 description 1
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- SZSSMFVYZRQGIM-UHFFFAOYSA-N 2-(hydroxymethyl)-2-propylpropane-1,3-diol Chemical compound CCCC(CO)(CO)CO SZSSMFVYZRQGIM-UHFFFAOYSA-N 0.000 description 1
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 1
- WBIQQQGBSDOWNP-UHFFFAOYSA-N 2-dodecylbenzenesulfonic acid Chemical compound CCCCCCCCCCCCC1=CC=CC=C1S(O)(=O)=O WBIQQQGBSDOWNP-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- WJIOHMVWGVGWJW-UHFFFAOYSA-N 3-methyl-n-[4-[(3-methylpyrazole-1-carbonyl)amino]butyl]pyrazole-1-carboxamide Chemical compound N1=C(C)C=CN1C(=O)NCCCCNC(=O)N1N=C(C)C=C1 WJIOHMVWGVGWJW-UHFFFAOYSA-N 0.000 description 1
- 229920002972 Acrylic fiber Polymers 0.000 description 1
- ATLMFJTZZPOKLC-UHFFFAOYSA-N C70 fullerene Chemical class C12=C(C3=C4C5=C67)C8=C9C%10=C%11C%12=C%13C(C%14=C%15C%16=%17)=C%18C%19=C%20C%21=C%22C%23=C%24C%21=C%21C(C=%25%26)=C%20C%18=C%12C%26=C%10C8=C4C=%25C%21=C5C%24=C6C(C4=C56)=C%23C5=C5C%22=C%19C%14=C5C=%17C6=C5C6=C4C7=C3C1=C6C1=C5C%16=C3C%15=C%13C%11=C4C9=C2C1=C34 ATLMFJTZZPOKLC-UHFFFAOYSA-N 0.000 description 1
- BHPQYMZQTOCNFJ-UHFFFAOYSA-N Calcium cation Chemical group [Ca+2] BHPQYMZQTOCNFJ-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000001263 FEMA 3042 Substances 0.000 description 1
- 229910001021 Ferroalloy Inorganic materials 0.000 description 1
- 229910000519 Ferrosilicon Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001335 Galvanized steel Inorganic materials 0.000 description 1
- 239000005058 Isophorone diisocyanate Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- LRBQNJMCXXYXIU-PPKXGCFTSA-N Penta-digallate-beta-D-glucose Natural products OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-PPKXGCFTSA-N 0.000 description 1
- ALQSHHUCVQOPAS-UHFFFAOYSA-N Pentane-1,5-diol Chemical compound OCCCCCO ALQSHHUCVQOPAS-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 239000004695 Polyether sulfone Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- 239000013504 Triton X-100 Substances 0.000 description 1
- 229920004890 Triton X-100 Polymers 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 1
- YIMQCDZDWXUDCA-UHFFFAOYSA-N [4-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1CCC(CO)CC1 YIMQCDZDWXUDCA-UHFFFAOYSA-N 0.000 description 1
- PGTXKIZLOWULDJ-UHFFFAOYSA-N [Mg].[Zn] Chemical compound [Mg].[Zn] PGTXKIZLOWULDJ-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000005215 alkyl ethers Chemical class 0.000 description 1
- 230000002152 alkylating effect Effects 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- ILRRQNADMUWWFW-UHFFFAOYSA-K aluminium phosphate Chemical compound O1[Al]2OP1(=O)O2 ILRRQNADMUWWFW-UHFFFAOYSA-K 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- FJMNNXLGOUYVHO-UHFFFAOYSA-N aluminum zinc Chemical compound [Al].[Zn] FJMNNXLGOUYVHO-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 239000002280 amphoteric surfactant Substances 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 239000003945 anionic surfactant Substances 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- QFFVPLLCYGOFPU-UHFFFAOYSA-N barium chromate Chemical compound [Ba+2].[O-][Cr]([O-])(=O)=O QFFVPLLCYGOFPU-UHFFFAOYSA-N 0.000 description 1
- 229940083898 barium chromate Drugs 0.000 description 1
- RCMWGBKVFBTLCW-UHFFFAOYSA-N barium(2+);dioxido(dioxo)molybdenum Chemical compound [Ba+2].[O-][Mo]([O-])(=O)=O RCMWGBKVFBTLCW-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000002981 blocking agent Substances 0.000 description 1
- 235000008429 bread Nutrition 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910001424 calcium ion Inorganic materials 0.000 description 1
- 239000000378 calcium silicate Substances 0.000 description 1
- 229910052918 calcium silicate Inorganic materials 0.000 description 1
- BCFSVSISUGYRMF-UHFFFAOYSA-N calcium;dioxido(dioxo)chromium;dihydrate Chemical compound O.O.[Ca+2].[O-][Cr]([O-])(=O)=O BCFSVSISUGYRMF-UHFFFAOYSA-N 0.000 description 1
- BIOOACNPATUQFW-UHFFFAOYSA-N calcium;dioxido(dioxo)molybdenum Chemical compound [Ca+2].[O-][Mo]([O-])(=O)=O BIOOACNPATUQFW-UHFFFAOYSA-N 0.000 description 1
- OYACROKNLOSFPA-UHFFFAOYSA-N calcium;dioxido(oxo)silane Chemical compound [Ca+2].[O-][Si]([O-])=O OYACROKNLOSFPA-UHFFFAOYSA-N 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 239000003093 cationic surfactant Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- DQIPXGFHRRCVHY-UHFFFAOYSA-N chromium zinc Chemical compound [Cr].[Zn] DQIPXGFHRRCVHY-UHFFFAOYSA-N 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- KORSJDCBLAPZEQ-UHFFFAOYSA-N dicyclohexylmethane-4,4'-diisocyanate Chemical compound C1CC(N=C=O)CCC1CC1CCC(N=C=O)CC1 KORSJDCBLAPZEQ-UHFFFAOYSA-N 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 229940060296 dodecylbenzenesulfonic acid Drugs 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005886 esterification reaction Methods 0.000 description 1
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000008397 galvanized steel Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000007646 gravure printing Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- TZMQHOJDDMFGQX-UHFFFAOYSA-N hexane-1,1,1-triol Chemical compound CCCCCC(O)(O)O TZMQHOJDDMFGQX-UHFFFAOYSA-N 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 229910000398 iron phosphate Inorganic materials 0.000 description 1
- KFZAUHNPPZCSCR-UHFFFAOYSA-N iron zinc Chemical compound [Fe].[Zn] KFZAUHNPPZCSCR-UHFFFAOYSA-N 0.000 description 1
- WBJZTOZJJYAKHQ-UHFFFAOYSA-K iron(3+) phosphate Chemical compound [Fe+3].[O-]P([O-])([O-])=O WBJZTOZJJYAKHQ-UHFFFAOYSA-K 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- HLJDOURGTRAFHE-UHFFFAOYSA-N isocyanic acid;3,5,5-trimethylcyclohex-2-en-1-one Chemical compound N=C=O.N=C=O.CC1=CC(=O)CC(C)(C)C1 HLJDOURGTRAFHE-UHFFFAOYSA-N 0.000 description 1
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 1
- 150000003951 lactams Chemical class 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 125000005647 linker group Chemical group 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- MEFBJEMVZONFCJ-UHFFFAOYSA-N molybdate Chemical compound [O-][Mo]([O-])(=O)=O MEFBJEMVZONFCJ-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- KKFHAJHLJHVUDM-UHFFFAOYSA-N n-vinylcarbazole Chemical compound C1=CC=C2N(C=C)C3=CC=CC=C3C2=C1 KKFHAJHLJHVUDM-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- QELJHCBNGDEXLD-UHFFFAOYSA-N nickel zinc Chemical compound [Ni].[Zn] QELJHCBNGDEXLD-UHFFFAOYSA-N 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- DCKVFVYPWDKYDN-UHFFFAOYSA-L oxygen(2-);titanium(4+);sulfate Chemical compound [O-2].[Ti+4].[O-]S([O-])(=O)=O DCKVFVYPWDKYDN-UHFFFAOYSA-L 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000007591 painting process Methods 0.000 description 1
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 1
- PRCNQQRRDGMPKS-UHFFFAOYSA-N pentane-2,4-dione;zinc Chemical compound [Zn].CC(=O)CC(C)=O.CC(=O)CC(C)=O PRCNQQRRDGMPKS-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- 239000011301 petroleum pitch Substances 0.000 description 1
- DPTATFGPDCLUTF-UHFFFAOYSA-N phosphanylidyneiron Chemical compound [Fe]#P DPTATFGPDCLUTF-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920006393 polyether sulfone Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920013716 polyethylene resin Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920000414 polyfuran Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 125000004424 polypyridyl Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920000909 polytetrahydrofuran Polymers 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007767 slide coating Methods 0.000 description 1
- 235000019832 sodium triphosphate Nutrition 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- NVKTUNLPFJHLCG-UHFFFAOYSA-N strontium chromate Chemical compound [Sr+2].[O-][Cr]([O-])(=O)=O NVKTUNLPFJHLCG-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- 150000003509 tertiary alcohols Chemical class 0.000 description 1
- 125000005207 tetraalkylammonium group Chemical group 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910000349 titanium oxysulfate Inorganic materials 0.000 description 1
- YJVLWFXZVBOFRZ-UHFFFAOYSA-N titanium zinc Chemical compound [Ti].[Zn] YJVLWFXZVBOFRZ-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- QXJQHYBHAIHNGG-UHFFFAOYSA-N trimethylolethane Chemical compound OCC(C)(CO)CO QXJQHYBHAIHNGG-UHFFFAOYSA-N 0.000 description 1
- UNXRWKVEANCORM-UHFFFAOYSA-I triphosphate(5-) Chemical compound [O-]P([O-])(=O)OP([O-])(=O)OP([O-])([O-])=O UNXRWKVEANCORM-UHFFFAOYSA-I 0.000 description 1
- AUTOISGCBLBLBA-UHFFFAOYSA-N trizinc;diphosphite Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]P([O-])[O-].[O-]P([O-])[O-] AUTOISGCBLBLBA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 238000005199 ultracentrifugation Methods 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/12—Layered products comprising a layer of synthetic resin next to a fibrous or filamentary layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
- B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
- B32B9/007—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile comprising carbon, e.g. graphite, composite carbon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B9/045—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
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- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10K30/821—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising carbon nanotubes
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- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10K30/83—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes comprising arrangements for extracting the current from the cell, e.g. metal finger grid systems to reduce the serial resistance of transparent electrodes
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- H10K39/12—Electrical configurations of PV cells, e.g. series connections or parallel connections
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2262/00—Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
- B32B2262/10—Inorganic fibres
- B32B2262/106—Carbon fibres, e.g. graphite fibres
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- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/202—Conductive
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
- B32B2307/412—Transparent
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the present invention relates to a transparent electrode used for an organic electronic device typified by an organic solar cell, an organic electroluminescence element, and the like, and an organic electronic device using the transparent electrode.
- Transparent electrodes are used for organic electronic devices.
- a transparent electrode is arrange
- the transparent electrode is disposed on the light emitting surface side of a light emitting element typified by an organic EL (electroluminescence) element.
- ITO Indium tin oxide
- ITO Indium tin oxide
- ITO contains indium oxide (In 2 O 3 ) and several percent of tin oxide (SnO 2 ).
- a method for producing a transparent electrode made of ITO is disclosed in Document 1, for example. Specifically, an ITO coating solution in which ITO fine particles are dispersed in a solvent is prepared. An ITO coating solution is applied onto the substrate. The ITO coating solution on the substrate is heated at 400 to 800 ° C. to form an ITO film (transparent electrode).
- the transparent electrode made of the ITO film is formed by baking at the heating temperature described above. Therefore, a heat-resistant substrate that can withstand the firing temperature must be prepared. Furthermore, the heat resistance of the organic functional layer (power generation layer or light emitting layer) included in the organic electronic device is low. Therefore, a transparent electrode made of an ITO film cannot be formed on the organic functional layer.
- a conductive polymer layer has been developed as a transparent electrode with a low firing temperature.
- An example of the conductive polymer layer is a PEDOT / PSS layer.
- the PEDOT / PSS layer is disclosed in Document 2, for example.
- the PEDOT / PSS layer is manufactured by the following method. A dispersion in which poly 3,4-ethylenedioxythiophene (PEDOT) is dispersed in water together with polystyrene sulfonic acid (PSS) is prepared. The dispersion is applied to the substrate and dried.
- a PEDOT / PSS layer is formed by the above process.
- Document 3 proposes a transparent conductive film containing metal nanowires.
- the transparent conductive film disclosed in Document 3 contains a plurality of metal nanowires and an ionizing radiation curable resin.
- the average diameter of the metal nanowire is 40 to 100 nm, and the metal nanowire is included in the transparent conductive film.
- the metal nanowire is, for example, silver.
- the metal nanowires intersect to form a network structure. Thereby, a conductive path is formed, and the conductivity of the transparent conductive film is obtained. Furthermore, since the metal nanowire forms a network structure, transparency can be obtained.
- the transparent conductive material of Document 3 is formed by applying a coating containing metal nanowires on a substrate or an organic functional layer and curing or drying by light irradiation.
- the transparent electrode or a member corresponding to the transparent electrode is also disclosed in Documents 4 to 8.
- literature 9 discloses using a tenless steel plate as a substrate for a dye-sensitized solar cell.
- CIGS compound mainly composed of copper (Cu), indium (In), gallium (Ga), selenium (Se)
- the solar cell used is disclosed.
- Document 11 discloses a silicon-based solar cell using a stainless steel plate as a substrate.
- Reference 12 discloses an organic thin film solar cell in which a battery structure is formed on a glass substrate using an organic thin film.
- Document 1 Japanese Unexamined Patent Publication No. 2009-123396 Reference 2: Japanese Unexamined Patent Publication No. 2013-185137 Reference 3: Japanese Unexamined Patent Publication No. 2012-216535 Reference 4: Japanese Unexamined Patent Publication No. 2012-219333 Reference 5 : International Publication WO 2010/106899 Publication 6: Japan Special Table 2006-527454 Publication 7: Japan JP 2013-152579 A Publication 8: Japan JP 2011-86482 A Publication 9: Japan Special Japanese Laid-Open Patent Publication No. 2012-201951 Document 10: Japanese Patent Application Laid-Open No. 2012-97343 Document 11: Japanese Patent Application Laid-Open No. 2011-204723 Document 12: Organic Electronics, 13 (2012) 2130-2137
- the conductive polymer layer does not need to be fired at a high temperature and is easily formed. Therefore, the conductive polymer layer can be formed not only on the substrate but also on the organic functional layer. However, the conductive polymer layer has lower conductivity and light transmittance than the ITO film. On the other hand, in the transparent electrode using metal nanowire, the cost of metal nanowire is high. Furthermore, in the mesh structure of the metal nanowire, the gap portion (that is, the resin portion) other than the metal nanowire has no conductivity, and the conductivity as a transparent electrode is low.
- an object of the present invention is to provide a transparent electrode that can be formed on an organic functional layer and has high conductivity and light transmittance, and an organic electronic device including the transparent electrode.
- a conductive polymer layer A plurality of carbon fibers having a diameter greater than the thickness of the conductive polymer layer; Have A transparent electrode in which a part of the carbon fiber is embedded in the conductive polymer layer.
- An organic electronic device comprising:
- organic electronic device ⁇ 8> The organic electronic device according to claim 6 or 7, wherein the organic functional layer is an organic functional layer having a power generation layer as a photoelectric conversion layer.
- a transparent electrode that can be formed on an organic functional layer and has high conductivity and light transmittance, and an organic electronic device including the transparent electrode are provided.
- FIG. 4 is a schematic diagram for explaining an IV curve of a solar cell prototyped in Example B.
- the organic electronic device 1 includes a substrate 10, a substrate electrode 11 disposed on the substrate 10, an organic functional layer 12 disposed on the substrate electrode 11, and an organic function. And a transparent electrode 13 disposed on the layer 12.
- the organic electronic device 1 also includes a sealing layer 14 that seals the substrate electrode 11, the organic functional layer 12, and the transparent electrode 13.
- the sealing layer 14 is a layer provided as needed.
- the transparent electrode 13 provided as the upper electrode of the organic electronic device 1 includes a conductive polymer layer 131 and a plurality of carbons having a diameter larger than the thickness of the conductive polymer layer 131, as shown in FIGS.
- a part of the carbon fiber 132 is embedded in the conductive polymer layer 131. Note that a part of the carbon fibers 132 being embedded in the conductive polymer layer 131 means that a part of each of the plurality of carbon fibers is embedded in the conductive polymer layer 131.
- the organic electronic device 1 is a device that sufficiently exhibits the function of the organic functional layer 12 by the above configuration. The reason is estimated as follows.
- the transparent electrode 13 includes a plurality of carbon fibers 132 having high conductivity. Since the carbon fiber 132 has a diameter larger than the thickness of the conductive polymer layer 131, the carbon fiber 132 is exposed from the conductive polymer layer 131. Further, since the carbon fibers 132 are provided so as to be partially embedded in the conductive polymer layer 131, the carbon fibers 132 are in contact with the layer (the organic functional layer 12 in the present embodiment) in contact with the conductive polymer layer 131. Alternatively, the distance from the lower layer in contact with the conductive polymer layer is shortened, and direct conduction with the lower layer is easily achieved.
- the carbon fiber 132 is likely to be in a state where a plurality of carbon fibers 132 are in contact with each other by making the diameter larger than the thickness of the conductive polymer.
- the gaps other than the carbon fibers 132 are in a state where conductivity is imparted by the conductive polymer layer 131. As a result, the conductivity of the transparent electrode 13 is improved.
- the conductive polymer layer 131 having low light transmittance is provided thinner than the diameter of the carbon fiber 132, the light transmittance of the transparent electrode 13 is improved. Even if the thickness of the conductive polymer layer 131 is reduced, the conductivity of the transparent electrode 13 is improved by the carbon fiber 132 having high conductivity.
- the transparent electrode 13 composed of the carbon fibers 132 and the conductive polymer layer 131 can be formed at a low temperature by, for example, applying and drying a coating solution containing the carbon fibers 132 and the conductive polymer. That is, the transparent electrode 13 can also be formed on the organic functional layer 12.
- the transparent electrode 13 can also be formed on the organic functional layer 12, and it is presumed that the conductivity and the light transmittance become high. And the organic electronic device 1 provided with the transparent electrode 13 becomes a device which fully exhibits the function of the organic functional layer 12.
- the material of the substrate 10 is not particularly limited.
- the substrate 10 may contain a resin or may contain an inorganic typified by glass or the like.
- substrate 10 may have a light transmittance, and does not need to have a light transmittance.
- the substrate 10 may be, for example, an inorganic substrate made of an inorganic material such as glass, ceramic, or metal, or an acrylic resin, a polycarbonate resin, a polyolefin resin, a polyester resin, or an epoxy resin. It may be a plastic substrate made of a resin such as a resin, a urethane resin, a polyvinyl alcohol resin, a polyvinyl chloride resin, a polyethylene resin, or a polyimide resin.
- the substrate 10 is a conductor such as a metal substrate, it is electrically disconnected from the substrate electrode 11.
- an insulating layer is coated on the surface of the substrate 10, and the substrate electrode 11 is formed thereon. Also good.
- An example of this metal plate is a painted metal plate.
- the substrate electrode 11 is disposed on the substrate 10.
- the substrate electrode 11 has a known configuration.
- the substrate electrode 11 is, for example, a metal thin film.
- a metal thin film is a thin film comprised with metals or alloys, such as aluminum, silver, gold
- the substrate electrode 11 is a thin film such as metal nanowire, tin-doped indium tin oxide (ITO), fluorine-doped tin oxide (FTO), aluminum-added zinc oxide (ZAO), graphene, conductive polymer, etc. Also good.
- the substrate electrode 11 when the substrate electrode 11 is formed of a conductive polymer thin film, the substrate electrode 11 can be manufactured by a method capable of forming a film at a low temperature (for example, a spin coating method) without using a costly method such as vapor deposition.
- the thickness of the substrate electrode 11 is not particularly limited, but is preferably 0.5 to 3 ⁇ m, more preferably 1 to 2 ⁇ m in consideration of performance and cost.
- Organic functional layer 12 The organic functional layer 12 is disposed on the substrate electrode 11.
- the organic functional layer 12 is disposed between the substrate electrode 11 and the transparent electrode 13.
- the organic functional layer 12 includes, for example, an organic functional layer having a photoelectric conversion layer (a power generation layer, a light emitting layer, a light receiving layer, or the like).
- the organic functional layer 12 may include a plurality of layers.
- the organic functional layer 12 means a layer in which at least one layer is composed of an organic layer.
- the organic functional layer 12 includes, for example, a photoelectric conversion layer 121, an electron transport layer 122 provided on the substrate electrode 11 side of the photoelectric conversion layer 121, and a positive electrode provided on the transparent electrode 13 side of the photoelectric conversion layer 121. And a hole transport layer 123.
- the photoelectric conversion layer 121 is a power generation layer
- the organic electronic device 1 is a light emitting element
- the photoelectric conversion layer 121 is a light emitting layer
- the photoelectric conversion layer 121 is a light receiving layer.
- the organic functional layer 12 may have only the light conversion layer 12A, or may have the light conversion layer 12A and one of the electron transport layer 122 and the hole transport layer 123.
- the organic functional layer 12 may further include a layer other than the above, for example, a hole injection layer, an electron injection layer, an insulating layer, an antireflection layer, and the like.
- the transparent electrode 13 is disposed on the organic functional layer 12 as an upper electrode.
- the transparent electrode 13 has a conductive polymer layer 131 and a plurality of carbon fibers 132.
- the conductive polymer layer 131 contains a conductive polymer.
- the conductive polymer is a polymer that can conduct electricity.
- the conductive polymer is preferably a non-conjugated polymer or a conjugated polymer in which aromatic carbocycles, aromatic heterocycles or heterocycles are connected by a single bond or a divalent or higher linking group.
- Conductive polymers include, for example, polyaniline, polythiophene, polyparaphenylene, polyisothianaphthene, polyparaphenylene vinylene, polyfuran, polypyrrole, polyselenophene, polyphenylene sulfide, polyacetylene, polypyridyl vinylene, polyethylene dioxythiophene, poly (p There are one or more substituted or unsubstituted conductive polymers selected from the group consisting of -phenylene) and polyazines.
- the conductive polymer of the conjugated polymer is, for example, one or two selected from the group consisting of halogen, alkali metal, amino acid, alcohol, camphorsulfonic acid, dodecylbenzenesulfonic acid, polystyrenesulfonic acid, and polyvinylsulfonic acid as a dopant. It is preferable to add seeds because it increases convenience. Specifically, when a dopant is added to the conductive polymer of these conjugated polymers, the state is stabilized, the solubility is improved, or the conductivity is improved.
- the conductive polymer preferably has hydrophilicity.
- the conductive polymer layer 131 can be formed using an aqueous dispersion of the conductive polymer.
- the conductive polymer is more preferably PEDOT / PSS.
- PEDOT / PSS is a polymer compound composed of poly3,4-ethylenedioxythiophene (PEDOT) and polystyrene sulfonic acid (PSS).
- PEDOT / PSS may be a known one.
- Commercially available PEDOT / PSS is, for example, H.264. C. Starck's CLEVIOS series, Aldrich's PEDOT-PASS 483095 and 560598, Nagase Chemtex's Denatron series.
- the preferred thickness of the conductive polymer layer 131 is 5 to 650 nm. If the thickness of the conductive polymer layer 131 is too thin, the conductivity (current collection effect) of the transparent electrode 13 may be reduced. On the other hand, if the conductive polymer layer 131 is too thick, the light transmittance of the transparent electrode 13 may decrease. Therefore, when the thickness of the conductive polymer layer 131 is 5 to 650 nm, the conductivity (current collection effect) and light transmittance of the transparent electrode 13 are likely to increase.
- the minimum with the preferable conductive polymer layer 131 is 100 nm, More preferably, it is 130 nm.
- the upper limit with the preferable conductive polymer layer 131 is 600 nm, More preferably, it is 400 nm.
- the thickness of the conductive polymer layer 131 is a value measured by the following method.
- the cross section of the transparent electrode 13 is observed at a magnification of 20 times with an SEM (scanning electron microscope), and the thickness of the conductive polymer layer 131 located at the center between the carbon fibers 132 is measured. And this measurement is performed in five places and let the average value be the thickness of the conductive polymer layer 131.
- the measurement target of the thickness of the conductive polymer layer 131 is the central portion between the carbon fibers 132 because the conductive polymer layer 131 is formed in a region close to the carbon fibers 132 by the surface tension. It is.
- the carbon fiber 132 is a well-known carbon fiber.
- the carbon fiber 132 is manufactured, for example, by making an acrylic fiber flame resistant / carbonized or infusible / carbonized / graphitized from petroleum pitch.
- the diameter of the carbon fiber 132 is larger than the thickness of the conductive polymer layer 131. Therefore, as shown in FIG. 2, a part of the carbon fiber 132 is embedded in the conductive polymer layer 131. That is, a part of the carbon fiber 132 is included in the conductive polymer layer 131, but the remaining part of the carbon fiber 132 is exposed from the conductive polymer layer 131.
- the plurality of carbon fibers 132 are part of one side in the radial direction (for example, part of one side in the radial direction and from the outer peripheral surface to 1/3 of the diameter. (Preferably part of the region up to 1/4 or less)) is embedded in the conductive polymer layer 131, and is disposed in a scattered manner.
- the carbon fiber 132 may overlap with the other carbon fiber 132 and may be disposed on the conductive polymer layer 131. In this case, for example, the carbon fiber 132 overlaps with the other carbon fiber 132.
- a part except for the region and its periphery is buried in the conductive polymer layer 131.
- the preferred diameter of the carbon fiber 132 is 2 to 90 times the thickness of the conductive polymer layer 131. If the ratio of the diameter of the carbon fiber 132 to the thickness of the conductive polymer layer 131 is too small, the conductivity of the transparent electrode 13 may be reduced. If the ratio of the diameter of the carbon fiber 132 to the thickness of the conductive polymer layer 131 is too large, the light transmittance of the transparent electrode 13 may be lowered. Therefore, when the ratio of the diameter of the carbon fiber 132 to the thickness of the conductive polymer layer 131 is 2 to 90 times, the conductivity (current collection effect) and light transmittance of the transparent electrode 13 are easily increased.
- a more preferable lower limit value of the ratio of the diameter of the carbon fiber 132 to the thickness of the conductive polymer layer 131 is 18 times, and more preferably 35 times.
- a more preferable upper limit value of the ratio of the diameter of the carbon fiber 132 to the thickness of the conductive polymer layer 131 is 84 times, and more preferably 60 times.
- the preferred diameter of the specific carbon fiber 132 is 2 to 15 ⁇ m.
- a more preferable lower limit value of the diameter of the carbon fiber 132 is 5 ⁇ m, and more preferably 8 ⁇ m.
- a more preferable upper limit value of the diameter of the carbon fiber 132 is 13 ⁇ m, and more preferably 11 ⁇ m.
- the diameter of the carbon fiber 132 is a value measured by the following method.
- the cross section of the transparent electrode 13 is observed by SEM (scanning electron microscope) at a magnification of 5,000 times, and the diameter of the cross section of the carbon fiber 132 that is orthogonal to the length direction of the carbon fiber 132 is measured. And this measurement is performed in five places and let the average value be the diameter of the carbon fiber 132.
- the carbon fiber 132 can be collected independently, the carbon fiber 132 is directly observed and measured.
- the preferred length of the carbon fiber 132 is 50 to 7000 ⁇ m (7 mm). As shown in FIG. 3, in the transparent electrode 13, at least some of the plurality of carbon fibers 132 are preferably in contact with each other. In this case, the conductivity of the transparent electrode 13 is likely to increase. If the length of the carbon fiber 132 is too short, the number of the carbon fibers 132 that are in contact with each other is reduced, and the conductivity of the transparent electrode 13 may be lowered. On the other hand, if the length of the carbon fiber 132 is too long, the carbon fiber 132 becomes difficult to disperse uniformly in the transparent electrode 13, and the conductivity may be lowered.
- the conductivity of the transparent electrode 13 is likely to increase.
- the minimum with more preferable length of the carbon fiber 132 is 2000 micrometers, More preferably, it is 2500 micrometers.
- the upper limit with more preferable length of the carbon fiber 132 is 6500 micrometers, More preferably, it is 6000 micrometers.
- the length of the carbon fiber 132 is a value measured by the following method.
- the plane of the transparent electrode 13 (the surface on which the carbon fibers 132 are provided) is observed with an optical microscope at a magnification of 10 times, and the length of the carbon fibers 132 is measured. And this measurement is performed in five places and let the average value be the length of the carbon fiber 132.
- the carbon fiber 132 can be collected independently, the carbon fiber 132 is directly observed and measured.
- the preferred area ratio of the carbon fiber 132 is 40 to 90% with respect to the transparent electrode 13.
- the area ratio of the carbon fibers 132 refers to the area of the carbon fibers per unit area of the transparent electrode 13 (transparent electrode 13) when viewed from a direction perpendicular to the plane of the transparent electrode 13 (surface on which the carbon fibers 132 are provided). Of the carbon fiber in the thickness direction). If the area ratio of the carbon fiber 132 is too small, the conductivity of the transparent electrode 13 may decrease. If the area ratio of the carbon fibers 132 is too large, the light transmittance of the transparent electrode 13 may decrease. Therefore, when the area ratio of the carbon fibers 132 is set to 40 to 90%, the conductivity and light transmittance of the transparent electrode 13 are easily increased.
- the more preferable lower limit of the area ratio of the carbon fibers 132 is 45%, and more preferably 50%.
- a more preferable upper limit of the area ratio of the carbon fibers 132 is 87%, and more preferably 80%.
- the area ratio of the carbon fibers 132 is a value measured by the following method.
- the plane of the transparent electrode 13 (the surface on which the carbon fibers 132 are provided) is observed with an optical microscope at a magnification of 5 times, and the area ratio of the carbon fibers 132 in the observation field is measured. And this measurement is performed by five visual fields, and let the average value be the area ratio of the carbon fiber 132.
- the preferred carbon fiber 132 content in the transparent electrode 13 is 70 to 98% by mass. If the content of the carbon fiber 132 is too low, the conductivity of the transparent electrode 13 may be lowered. On the other hand, if the content of the carbon fiber 132 is too high, the light transmittance of the transparent electrode 13 may be lowered. Therefore, when the content of the carbon fiber 132 is 70 to 98% by mass, the conductivity and light transmittance of the transparent electrode 13 are easily increased.
- the sealing layer 14 is a layer that is provided on the transparent electrode 13 and seals the substrate electrode 11, the organic functional layer 12, and the transparent electrode 13.
- the sealing layer 14 is not particularly limited, is sealed with a well-known sealing material having high light transmittance, durability (weather resistance, high temperature resistance, high humidity resistance, weather resistance, etc.), and electrical insulation.
- a stop layer is applied.
- the sealing material include resin sealing materials such as ethylene-vinyl acetate copolymer (EVA), polyethylene terephthalate, polyethylene naphthalate, polyethersulfone, and polycarbonate.
- the substrate 10, the substrate electrode 11, and the organic functional layer 12 are manufactured by a known method.
- the substrate 10 is prepared.
- a substrate electrode 11 is formed on the substrate 10.
- the substrate electrode 11 is manufactured by a known method.
- the substrate electrode 11 is formed by a method such as a vapor deposition method or a sputtering method using an electrode material (metal or the like).
- an ITO coating solution is applied on the substrate.
- the ITO coating solution on the substrate is heated at 400 to 800 ° C. to form the substrate electrode 11 (ITO film).
- the organic functional layer 12 is formed.
- the organic functional layer 12 is manufactured by a known method.
- the organic functional layer 12 is, for example, cast method, spin coating method, doctor blade method, screen printing method, ink jet method, meniscus method, die coating method, gravure printing method, slide coating method, spray method, flexographic printing method, electronic photo Manufactured by a graph method, a vapor deposition method, or the like.
- a transparent electrode 13 is formed on the organic functional layer 12.
- a conductive polymer dispersion is produced.
- the conductive polymer is dispersed in a solvent by a known method.
- Known methods include, for example, ultracentrifugation, cutting mill, disc mill, ball mill, and the like.
- the solvent is, for example, water, alcohol, ether or the like.
- the solvent is water.
- the carbon fiber 132 is added and dispersed in the conductive polymer dispersion.
- the dispersion method the above-described known method is adopted.
- a conductive polymer dispersion is produced by the above steps.
- an additive may be added to the conductive polymer dispersion.
- the additive include a surfactant, a solution accelerator, a plasticizer, an antioxidant, an antisulfurizing agent, and a clay adjusting agent.
- surfactant examples include anionic surfactants such as alkylsulfonic acid, alkylbenzenesulfonic acid, and alkylcarboxylic acid; cationic surfactants such as primary to tertiary fatty amines, quaternary ammonium, and tetraalkylammonium; N , N-dimethyl-N-alkyl-N-carboxymethylammonium betaine, N, N, N-trialkyl-N-sulfoalkyleneammonium betaine, and other amphoteric surfactants; polyoxyethylene alkyl ether, polyoxyethylene alkyl Nonionic surfactants such as phenyl ether and polyoxyethylene polystyryl phenyl ether.
- anionic surfactants such as alkylsulfonic acid, alkylbenzenesulfonic acid, and alkylcarboxylic acid
- cationic surfactants such as primary to tertiary fatty amines,
- DMSO dimethyl sulfoxide
- the conductive polymer dispersion is prepared by the above steps.
- the preferable content of the carbon fiber is 2.5% by mass or less.
- the conductivity of the transparent electrode 13 may be lowered. Therefore, the minimum with preferable content of the carbon fiber in an electroconductive polymer dispersion liquid is 1.0 mass%, More preferably, it is 1.5 mass%.
- the preferable content of the surfactant is 2.5% by mass or less.
- the minimum with preferable content of surfactant is 0.1 mass%.
- the preferable content of DMSO is 15% by mass or less.
- the minimum with preferable DMSO content is 5 mass%.
- the prepared conductive polymer dispersion is applied on the organic functional layer 12.
- the conductive polymer dispersion is applied onto the organic functional layer 12 using a spin coat, cast, extrusion die coater, bread coater, air doctor coater, knife coater, applicator, or the like.
- the coating film of a conductive polymer dispersion liquid is formed into a film.
- the coating film of the dispersion liquid is dried to form the transparent electrode 13.
- the drying method is not particularly limited. For example, it is dried for a predetermined time at a temperature of 120 ° C. or lower. A preferred drying time is 20 seconds to 30 minutes. However, the drying time is not limited to this. In the drying step, for example, a hot plate, an oven, a hot stove, or the like can be used.
- a sealing layer 14 is formed on the transparent electrode 13, and the substrate electrode 11, the organic functional layer 12, and the transparent electrode 13 are sealed.
- the organic electronic device 1 and the transparent electrode 13 are manufactured.
- the transparent electrode 13 can be easily manufactured by applying a dispersion and drying. Furthermore, since the transparent electrode 13 is formed by drying, it is not necessary to heat the coating film of the dispersion liquid to a high temperature of 400 ° C. or more unlike the ITO film. Therefore, the transparent electrode 13 can be easily manufactured even on the organic functional layer 12 having low heat resistance.
- the embodiment in which the transparent electrode 13 is formed using the conductive polymer dispersion liquid to which the carbon fibers 132 are added has been described.
- the method for forming the transparent electrode 13 is not limited thereto.
- a conductive polymer dispersion containing no carbon fiber 132 is applied onto the organic functional layer 12 to form a film, and then the carbon fiber 132 is sprinkled on the coating film of the conductive polymer dispersion and dried.
- the electrode 13 may be formed.
- the transparent electrode 13 by applying a conductive polymer dispersion mixed with the carbon fibers 132 on the organic functional layer 12. In this case, even if the carbon fibers 132 are arranged one above the other, the conductive polymer easily enters between the carbon fibers 132. Therefore, the conductivity of the transparent electrode 13 is likely to increase.
- the transparent electrode 13 is not limited to the organic functional layer 12 but may be formed on the substrate 10. Even when the transparent electrode 13 is formed on the substrate 10, the manufacturing method of the transparent electrode 13 is the same as the above-described method.
- the organic electronic device 1 includes a solar cell, a light emitting element (such as an organic electroluminescent element), an imaging element (such as an image sensor), a transistor, and a display.
- the transparent electrode 13 can be used as a transparent electrode of an inorganic electronic device having an inorganic functional layer in addition to the organic electronic device 1.
- the solar cell module 2 includes a painted metal plate 10 ⁇ / b> A and a plurality of battery structures (single cells) 15 arranged on the painted metal plate.
- a sealing layer for sealing the battery structure (single cell) 15 is also provided.
- the battery structure 15 includes a substrate electrode 11, a power generation unit 12A disposed on the substrate electrode 11, and a transparent electrode 13 disposed on the power generation unit 12A.
- a portion where all of the substrate electrode, the power generation unit, and the transparent electrode overlap is a power generation location (power generation region).
- the plurality of battery structures 15 are connected to each other to form a module. ing.
- the connection (wiring) between the plurality of battery structures 15 is formed, for example, by overlapping the substrate electrode 11 and the transparent electrode 13 between the adjacent battery structures 15.
- the voltage of a battery structure (single cell) used for a solar battery is around 1V.
- the voltage of a battery structure (single cell) made of an organic thin film used in an organic thin film solar cell (OPV) is 1 V or less. Therefore, in order to put the organic thin film solar cell into practical use, it is necessary to connect a plurality of battery structures (single cells) and increase the final output voltage.
- a module is formed by connecting a plurality of battery structures (single cells) in order to increase the final output voltage.
- the energy conversion efficiency of a solar cell module is calculated and evaluated by dividing the amount of power generation by the total area irradiated with light, so that the connection (wiring) area is preferably small. Therefore, if a plurality of battery structures (single cells) can be manufactured on the same substrate, the wiring area can be reduced. For this reason, modularization of an organic thin film solar cell is effective.
- the solar cell module 2 is an example of a device obtained by modularizing the organic electronic device 1 to which the coated metal plate 10A is applied as a substrate and the power generation unit 12A is applied as the organic functional layer 12. That is, the organic electronic device 1 may be a device in which a plurality of structures of the substrate electrode 11, the organic functional layer 12, and the transparent electrode 13 are arranged on the substrate 10 to form a module.
- the coated metal plate 10A includes, for example, a base metal plate 101A such as a steel plate, and a coating layer 102A formed by applying a paint on the surface of the base metal plate 101A.
- FIG. 4 shows an example in which the coating layer 102A is provided only on one side of the base metal plate 101A, it may be provided on both sides of the base metal plate 101A.
- the battery structure 15 is formed on the surface of the coating metal plate 10A on which the coating layer 102A is provided.
- the substrate electrode When a conductive metal plate is used as a substrate, in order to configure a module with a plurality of battery structures (single cells) 15 formed on the substrate, the substrate electrode must be in direct contact with the conductive substrate. Need to avoid.
- Using the coated metal plate 10A having the insulating coating layer 102A on the side facing the substrate electrode 11 facilitates the solar cell module 2 in which a plurality of battery structures 15 are provided on one painted metal plate 10A. Allowing you to get into.
- the coated metal plate 10A has a coating layer 102A composed of one or more coating films on one or both surfaces of the base metal plate 101A, and the arithmetic average roughness Ra of the surface of the coating layer 102A is 20 nm or less.
- the minimum value of the dynamic storage elastic modulus in the rubber-like elastic region of the outermost layer is 2 ⁇ 10 9 Pa or less
- the total film thickness of the coating layer 102A is 1 to 30 ⁇ m
- the leakage current value when a voltage of 100V is applied is 10 ⁇ .
- a coated metal plate that is less than 6 A / cm 2 is preferred.
- the outermost layer of the coating layer 102A corresponds to the coating layer 102A when the coating layer 102A is composed of one coating film, and when the coating layer 102A is composed of two or more coating layers, the outermost layer of the coating layer 102A. Applicable to the coating film located.
- the coating layer 102A is composed of two or more coating films
- the physical properties of the outermost coating film affect the characteristics of the coated metal plate 10A and the solar cell module including the painted metal plate 10A, as will be described below. To do.
- the regulations for the coating layer 102A mainly relate to the outermost coating film.
- the surface of the coating layer 102A preferably has an arithmetic average roughness Ra value of 20 nm or less, more preferably an arithmetic average roughness Ra value of 20 nm or less, and a maximum peak height Rp and a maximum valley depth Rv.
- the value of the total roughness Rz is 200 nm or less. If Ra on the outermost layer is larger than 20 nm, it is difficult to sufficiently flatten the unevenness on the surface of the coated metal plate, which may cause a decrease in electrical performance.
- the Rz value of the outermost layer coating film is larger than 200 nm, even if Ra is 20 nm or less, pinholes may be generated in the substrate electrode 11 formed on the coated metal plate 10A, causing a short circuit. It may become.
- the surface roughness of the coating layer 102A varies depending on the measurement method. Therefore, the total roughness Rz of the arithmetic average roughness Ra, the maximum peak height Rp, and the maximum valley depth Rv is obtained by imaging the surface shape of the coating layer 102A using an AFM (atomic force microscope). It is defined as a value calculated based on the roughness curve measured from
- the total film thickness of the coating layer 102A is preferably 1 to 30 ⁇ m, more preferably 5 to 20 ⁇ m. If the total film thickness is less than 1 ⁇ m, the insulating properties of the coating layer 102A may deteriorate. If the total film thickness exceeds 20 ⁇ m, it may be disadvantageous in terms of cost.
- the total film thickness of the coating layer 102A is a value measured by cross-sectional observation of the coating layer 102A. Specifically, the coated metal plate 10A is embedded in a room temperature dry epoxy resin perpendicular to the thickness direction of the coating layer 102A, and the embedded surface is mechanically polished. Then, the polished surface is observed with a SEM (scanning electron microscope) at a magnification of 5,000 to measure the coating layer 102A. And this measurement is performed in five places and let the average value be the total film thickness of 102 A of coating layers.
- the coating layer 102A is formed between the painted metal plate 10A and the battery structure 15 formed on the painted metal plate 10A (particularly, the substrate electrode 11 in contact with the painted metal plate 10A of the battery structure 15). It is preferable to have a function of suppressing thermal stress caused by the difference in thermal expansion coefficient. That is, the coating layer 102 ⁇ / b> A may reduce the interfacial stress between the substrate electrode 11 and the coated metal plate 10 ⁇ / b> A and reduce the strain energy accumulated when a thermal history is applied to the formed battery structure 15.
- the coating layer 102A preferably has the above function.
- the strain energy is generally accumulated inside the coating layer 102A, and can be reduced by the viscoelastic properties of the main resin contained in the coating layer 102A.
- the main resin is not particularly limited.
- the strain energy depends on the molecular weight between the cross-linking points, and the molecular weight between the cross-linking points is generally a rubbery state of the resin. There is a correlation with the equilibrium elastic modulus of the elastic region.
- Resin which is a viscoelastic body changes in elastic modulus depending on temperature and time (frequency in the case of dynamic storage elastic modulus).
- a high elastic modulus generally 10 9 to 10
- a glassy elastic region in which the elastic modulus decreases.
- This region is called a glassy elastic region.
- the temperature increases or the time increases (in the case of dynamic storage elastic modulus, as the frequency decreases)
- a region where the elastic modulus decreases rapidly appears generally, this region is called a transition region).
- the equilibrium elastic modulus becomes constant, and this equilibrium elastic region is referred to as a rubber-like elastic region (generally around 10 6 to 10 8 Pa). Value).
- Dynamic storage that appears in the high temperature rubbery elastic region among the dynamic storage elastic modulus measured in the region of constant frequency (angular frequency 6.28 rad / sec) and temperature -50 to 200 ° C by dynamic viscoelasticity measuring device
- the characteristic of the coating film is defined by the minimum value of the elastic modulus.
- ⁇ 0 represents the maximum stress amplitude
- ⁇ 0 represents the maximum strain amplitude
- ⁇ represents the phase angle between the stress and strain.
- the minimum value of the dynamic storage elastic modulus in the rubber-like elastic region of the outermost layer in the coating layer 102A is preferably 2 ⁇ 10 9 Pa or less, more preferably 2 ⁇ 10 7 Pa or less.
- the minimum value of the dynamic storage elastic modulus exceeds 2 ⁇ 10 9 Pa, the molecular weight between the crosslinking points of the main resin of the outermost layer of the coating layer 102A becomes small, and when subjected to thermal stress, the coating layer 102A (its outermost layer) This is because the elastic strain energy accumulated inside may be large. That is, even if the coating layer 102A looks healthy immediately after the battery structure 15 is formed, the coating layer 102A (its outermost layer) may be broken or peeled off when receiving a thermal history. It is.
- the coated metal plate 10A preferably has a leakage current value of less than 10 ⁇ 6 A / cm 2 when a voltage of 100 V is applied.
- the coated metal plate 10A needs to have insulating properties for suppressing a decrease in electrical performance due to conduction between the power generation unit 12A including the power generation layer as the photoelectric conversion layer 121 and the base metal plate 101A. If the value is 10 ⁇ 6 A / cm 2 or more, it may be difficult to ensure the quality of the power generation unit 12A.
- the main resin of the coating layer 102A is not particularly limited, and examples thereof include polyester resin, epoxy resin, urethane resin, acrylic resin, melamine resin, and fluorine resin.
- the main resin of the coating layer 102A is preferably a thermosetting resin when it is used for applications where processing is severe.
- the thermosetting resin include polyester resins (epoxy polyester resins, polyester resins, melamine polyester resins, urethane polyester resins, etc.), acrylic resins, and the like. These polyester resins and acrylic resins have better processability than other resins, and the coating layer 102A is less likely to crack even after severe processing.
- the main resin of the outermost layer in the coating layer 102A is not particularly limited, but a polyester resin is preferable. Although it does not specifically limit as polyester-type resin, Generally what is a well-known ester compound of a polybasic acid and a polyhydric alcohol, Comprising: What is generally synthesize
- the polybasic acid is not particularly limited, and examples thereof include phthalic acid, isophthalic acid, terephthalic acid, phthalic anhydride, trimetic anhydride, maleic acid, adipic acid, and fumaric acid. These polybasic acids may use 1 type and may use multiple types together.
- the polyhydric alcohol is not particularly limited.
- ethylene glycol, diethylene glycol, polyethylene glycol, propylene glycol, dipropylene glycol, polypropylene glycol, neopentylene glycol, 1,4-butanediol, 1,5-pentanediol examples include 1,6-hexanediol, 1,4-cyclohexanedimethanol, polytetramethylene ether glycol, glycerin, trimethylolethane, trimethylolpropane, trimethylolbutane, hexanetriol, pentaerythritol, dipentaerythritol and the like.
- These polyhydric alcohols may be used alone or in combination of two or more.
- a polyester resin When using a polyester resin, it is preferable to add a curing agent because the hardness of the coating layer 102A is improved. Although it does not specifically limit as a hardening
- curing agent Generally one or both of a well-known amino resin and a polyisocyanate compound are used.
- the amino resin is not particularly limited, and examples thereof include resins obtained by reacting urea, benzoguanamine, melamine and the like with formaldehyde, and resins obtained by alkylating these with alcohol.
- Specific examples of amino resins include methylated urea resins, n-butylated benzoguanamine resins, melamine resins (methylated melamine resins, n-butylated melamine resins, iso-butylated melamine resins, etc.) and the like.
- polyester / melamine resin having a polyester resin as a main resin and a melamine resin as a curing agent.
- the melamine resin here include at least one of methylated melamine resin, n-butylated melamine resin, and iso-butylated melamine resin.
- the polyisocyanate compound is not particularly limited, but for example, an isocyanate compound blocked with a blocking agent such as phenol, cresol, aromatic secondary amine, tertiary alcohol, lactam, or oxime is preferable. More preferred polyisocyanate compounds include HDI (hexamethylene diisocyanate) and its derivatives, TDI (tolylene diisocyanate) and its derivatives, MDI (diphenylmethane diisocyanate) and its derivatives, XDI (xylylene diisocyanate) and its derivatives, IPDI (isophorone) Diisocyanate) and derivatives thereof, TMDI (trimethylhexamethylene diisocyanate) and derivatives thereof, hydrogenated TDI and derivatives thereof, hydrogenated MDI and derivatives thereof, hydrogenated XDI and derivatives thereof, and the like.
- a blocking agent such as phenol, cresol, aromatic secondary amine, tertiary alcohol, lactam, or oxi
- the structure of the coating layer 102A is not particularly limited, but when the coating layer 102A is a multilayer composed of two or more coating films, it is determined that at least one coating film is a layer containing a rust preventive pigment. 15 is preferred for enhancing the corrosion resistance.
- a phosphoric acid type antirust pigment Zinc phosphate, iron phosphate, aluminum phosphate, zinc phosphite, aluminum tripolyphosphate, etc.
- molybdate antirust pigments Calcium molybdate, aluminum molybdate, barium molybdate, etc.
- vanadium rust preventive pigments vanadium oxide, etc.
- silicate rust preventive pigments calcium silicate, etc.
- silica rust preventive pigments water-dispersed silica, fumed silica) , Calcium ion exchanged silica, etc.
- known chromate-free antirust pigments such as ferroalloy anticorrosive pigments (ferrosilicon, etc.)
- known chromium systems such as strontium chromate, potassium chromate, barium chromate, calcium chromate
- chromium systems such as strontium chromate, potassium chromate, barium chromate, calcium chromate
- the addition amount of the rust preventive pigment is preferably 1 to 40% by mass based on the solid content of the coating film. If the addition amount of the rust preventive pigment is less than 1% by mass, the corrosion resistance may not be improved sufficiently. When the addition amount of the rust preventive pigment is more than 40% by mass, the processability is lowered, the coating film may be dropped during the process, and the corrosion resistance tends to be inferior.
- the coated metal plate 10A is preferably a coated metal plate that is a product shipped to the customer in a state where the coating layer 102A is formed on the base metal plate 101A.
- the coated metal plate 10A includes a coated metal plate in which a coating is applied to the base metal plate 101A to form the coating layer 102A, and a painted metal plate in which a resin film is laminated to the base metal plate 101A to form the coating layer 102A. There is.
- These coated metal plates 10A can be painted after processing so that the painting process at the customer can be omitted, pollution and environmental problems caused by painting waste can be solved, and the space for painting can be repurposed for other purposes. There are advantages not to the post-coated metal plate.
- a chemical conversion treatment layer (not shown) may be provided between the base metal plate 101A and the coating layer 102A as necessary.
- the chemical conversion treatment layer is provided for the purpose of enhancing the adhesion between the base metal plate 101A and the coating layer 102A and improving the corrosion resistance.
- the chemical conversion treatment for forming the chemical conversion treatment layer for example, zinc phosphate treatment, chromate treatment, silane coupling treatment, composite oxide film treatment, chromate-free treatment, tannic acid-based treatment, titania-based treatment, zirconia-based treatment, Known processes such as a Ni surface adjustment process, a Co surface adjustment process, and a mixing process thereof may be used. Of these chemical conversion treatments, chromate-free treatment is preferable from the viewpoint of environmental conservation.
- the base metal plate 101A is not particularly limited, and examples thereof include metal plates such as iron, iron-based alloy, aluminum, aluminum-based alloy, copper, and copper-based alloy.
- the material metal plate 101A include a plated metal plate having an arbitrary plated layer on the metal plate.
- the most suitable base metal plate 101A is a metal plate (steel plate) having a zinc-based plating layer or an aluminum-based plating layer.
- Examples of zinc-based plating layers include zinc plating layers, zinc-nickel plating layers, zinc-iron plating layers, zinc-chromium plating layers, zinc-aluminum plating layers, zinc-titanium plating layers, zinc-magnesium plating layers, and zinc.
- these plating layers include cobalt, molybdenum, tungsten, nickel, titanium, chromium, aluminum, manganese, iron, magnesium, lead, bismuth, antimony as a small amount of different metal elements or impurities.
- a plating layer in which an inorganic substance such as silica, alumina, titania or the like is dispersed is also included, which contains tin, copper, cadmium, arsenic, or the like.
- an aluminum plating layer for example, an aluminum plating layer, an alloy plating layer made of aluminum and at least one of silicon, zinc, and magnesium (for example, an aluminum-silicon plating layer, an aluminum-zinc plating layer, An aluminum-silicon-magnesium plating layer).
- the base metal plate 101A includes a zinc-based plating layer or an aluminum-based plating layer, and other types of plating layers (for example, an iron plating layer, an iron-phosphorus plating layer, a nickel plating layer, a cobalt plating layer, etc.) It is also possible to apply a metal plate having a multilayer plating layer in which is laminated.
- the plating method is not particularly limited, and any known method such as an electroplating method, a hot dipping method, a vapor deposition plating method, a dispersion plating method, or a vacuum plating method may be used.
- the power generation unit 12 ⁇ / b> A has a power generation layer as the photoelectric conversion layer 121.
- the power generation unit 12A includes, for example, a power generation layer as the photoelectric conversion layer 121, an electron transport layer 122 provided on the substrate electrode 11 side of the power generation layer, and holes provided on the transparent electrode 13 side of the power generation layer.
- a transport layer 123 (see FIG. 1).
- the electron transport layer 122 and the hole transport layer 123 are provided as necessary.
- the power generation unit 12A may have other layers than the above, for example, a hole injection layer, an electron injection layer, an insulating layer, an antireflection layer, and the like.
- the power generation layer contains, for example, an organic semiconductor.
- the power generation layer containing an organic semiconductor can be manufactured by a method (for example, spin coating method) capable of forming a film at a low temperature without using a costly method such as vapor deposition.
- Examples of the organic semiconductor include any p-type organic semiconductor having an electron donating property and any n-type organic semiconductor having an electron accepting property.
- the p-type organic semiconductor is not particularly limited, but P3HT (poly (3-hexylthiophene-2,5-diyl), thiophene, phenylene vinylene, thienylene vinylene, carbazole, vinyl carbazole, pyrrole, isothiaphene, isothiana.
- Examples of the organic semiconductor include at least one group selected from the group consisting of a hydroxyl group, an alkyl group, an amino group, a methyl group, a nitro group, and a halogen group.
- the p-type organic semiconductor may be used alone or in combination of two or more.
- the n-type organic semiconductor include PCBM ([6,6] -phenyl C61 butyric acid methyl ester), fullerene derivatives, perylene derivatives, and the like.
- fullerene derivatives are particularly preferable because electron transfer from the p-type organic semiconductor is particularly fast.
- fullerene derivatives include fullerene C60 derivatives, fullerene C70 derivatives, fullerene C80 derivatives, and the like.
- Commercially available products can be used as the n-type organic semiconductor. For example, as P3HT / PCBM, products made by Sigma-Aldrich, Frontier Carbon, etc. can be used.
- the electron transport layer 122 contains an electron transport material.
- the electron transport material include zinc acetate, zinc (II) acetylacetonate, titanium isopropoxide, titanium oxysulfate, and the like.
- the hole transport layer 123 contains a hole transport material. Examples of the hole transport material include metal oxides such as PEDOT / PSS, molybdenum oxide, nickel oxide, and tungsten oxide.
- the film thickness of each layer constituting the power generation unit 12A is not particularly limited, and may be determined in consideration of performance and cost.
- the thickness of the power generation layer is preferably 50 to 400 nm, more preferably 100 to 300 nm.
- the film thickness of the electron transport layer 122 and the hole transport layer 123 is preferably 80 to 300 nm, and more preferably 100 to 250 nm.
- the substrate electrode 11 of the solar cell module, the transparent electrode 13 as the upper electrode, and the sealing layer have the same configuration as the substrate electrode 11, the transparent electrode 13, and the sealing layer 14 described in the organic electronic device. Therefore, the description is omitted.
- the solar cell module 2 can be manufactured according to the manufacturing method of the organic electronic device 1.
- 1) the plurality of battery structures 15 were manufactured on the individual coated metal plates 10A.
- there are a method of connecting each electrode 1) a method of forming a plurality of battery structures 15 on one painted metal plate 10A, and connecting them.
- a method of forming a film in the form of a band on the coated metal plate 10A in the order of the substrate electrode 11, the power generation unit 12A, and the transparent electrode 13 is taken. There are many cases.
- Example A Transparent electrodes with test numbers 1 to 57 shown in Tables 1 to 3 were prepared, and the sheet resistance value ( ⁇ / sq) and light transmittance (%) of the transparent electrodes were examined.
- the transparent electrodes with test numbers 1 to 22 were manufactured by the following method.
- a glass substrate was prepared.
- a conductive polymer dispersion was prepared.
- a PEDOT / PSS dispersion (trade name Clevios P HC V4 manufactured by HC Starck) was used.
- the solid content concentration (NVC) of PEDOT / PSS in the dispersion was 1.3% by mass.
- DMSO manufactured by Aldrich
- SF surfactant
- Details of the composition of the dispersion are shown in Table 1.
- the prepared conductive polymer dispersion was applied onto a glass substrate by a doctor blade method to form a coating film. Thereafter, the coating film was dried at 120 ° C. for 20 minutes to produce a transparent electrode.
- the thickness of the conductive polymer layer of each transparent electrode was in the range of 130 to 600 nm.
- a conductive polymer dispersion containing carbon fiber was applied onto a glass substrate by a drop cast method to form a coating film of the dispersion. Thereafter, the coating film of the dispersion was dried at 120 ° C. for 20 minutes to produce a transparent electrode.
- the cross sections of the transparent electrodes of Test Nos. 23 to 57 were observed with an SEM, a part of the carbon fibers was embedded in the conductive polymer layer (PEDOT / PSS film), and the remainder was exposed from the conductive polymer layer.
- the thickness of the conductive polymer layer of the produced transparent electrode was measured according to the method described above, and as shown in Tables 1 to 3. Further, when the carbon fiber (CF) of the transparent electrode was measured according to the method described above, the area ratio of the carbon fiber (CF) was as shown in Tables 1 to 3.
- the carbon fiber (CF) content (mass%) in the produced transparent electrode was determined by the following method. First, the light transmittance of the transparent electrode was measured by the method described later. The mass of the carbon fiber is calculated from the light transmittance, and the content (% by mass) of the carbon fiber in the transparent electrode is obtained from the mass of the conductive polymer layer calculated separately from the measured thickness of the conductive polymer layer. It was. The measurement results are shown in Tables 1 to 3.
- sheet resistance ( ⁇ / sq) was determined by the following method. Specifically, sheet resistance was measured by a 4-terminal 4-probe method using a Loresta-GP MCP-T601 model manufactured by Mitsubishi Chemical Analytech Co., Ltd.
- the light transmittance (%) was measured with respect to the transparent electrode of each test number using a spectrophotometer (trade name Varian Cary 4000) manufactured by Agilent Technologies.
- the details of each test are listed in Tables 1 to 3.
- the composition of the conductive polymer dispersion or the carbon fiber (CF) -containing conductive polymer dispersion and the thickness of the conductive polymer layer are the same between the test numbers (for example, test numbers 1 and 2, test numbers 23 and 24).
- the sheet resistance value and the optical loading rate are different due to the lot difference.
- the transparent test numbers 23 to 57 in which a part of a plurality of carbon fibers having a diameter larger than the thickness of the conductive polymer layer are embedded in the conductive polymer layer
- the electrode had a low sheet resistance of 100 ⁇ / sq or less.
- the transparent electrodes of test numbers 23 to 57 had a light transmittance of 65% or more.
- the transparent electrodes of Test Nos. 1 to 22 having no carbon fiber had a sheet resistance exceeding 100 ⁇ / sq.
- the carbon fibers are difficult to overlap in the conductive polymer layer, and the sheet resistance value of the transparent electrode is dominated by the sheet resistance value of the conductive polymer layer alone and may exceed 100 ⁇ / sq. For this reason, it is preferable that the ratio of the diameter of the carbon fiber to the thickness of the conductive polymer layer is twice or more.
- the carbon fibers when the diameter of the carbon fibers is less than 2 ⁇ m, the carbon fibers are difficult to overlap in the thick conductive polymer layer.
- the sheet resistance value of the transparent electrode is dominated by the sheet resistance value of the conductive polymer layer alone, and may exceed 100 ⁇ / sq. For this reason, it is preferable that the diameter of carbon fiber shall be 2 micrometers or more. Further, as indicated by the sheet resistance values (1899 to 2646 ⁇ / sq) of the transparent electrodes of Test Nos.
- the thickness of the conductive polymer layer is less than 5 nm, the amount of the conductive polymer that connects the carbon fibers is small, It becomes difficult to form a network of carbon fibers, and the sheet resistance value of the transparent electrode is dominated by the sheet resistance value of the conductive polymer layer alone, and may exceed 100 ⁇ / sq. For this reason, the thickness of the conductive polymer layer is preferably 5 nm or more.
- the sheet resistance values (101 to 103 ⁇ / sq) of the transparent electrodes of test numbers 21 and 22 when the length of the carbon fiber is less than 0.050 mm, the carbon fiber is short and the network of carbon fibers is The sheet resistance value of the transparent electrode is dominated by the sheet resistance value of the conductive polymer layer alone and may exceed 100 ⁇ / sq. For this reason, the length of the carbon fiber is preferably 0.050 mm or more.
- the sheet resistance values (101 to 103 ⁇ / sq) of the transparent electrodes of test numbers 21 and 22 when the area ratio of the carbon fibers is less than 40%, the carbon fibers are few and a network of carbon fibers is formed.
- the sheet resistance value of the transparent electrode is dominated by the sheet resistance value of the conductive polymer layer alone, and may exceed 100 ⁇ / sq. For this reason, it is preferable that the area ratio of carbon fiber shall be 40% or more.
- Example B the following organic thin film solar cell (OPV) was produced.
- -OPV of Example B1 OPV having a transparent electrode composed of carbon fiber (CF) and a PEDOT / PSS film (hereinafter also abbreviated as "PEDOT / PSS + CF film”)) as an upper electrode
- Comparative OPV An OPV in which the upper electrode of the OPV of Example B1 was replaced with a PEDOT / PSS film (hereinafter also abbreviated as “PEDOT / PSS + CF film”).
- Table 4 shows the materials used for each layer of OPV of Example B1 and Comparative Example
- Table 5 shows the film forming conditions of the layer formed by spin coating, and various sizes (unit: solar cell) produced in FIG. mm).
- the power generation region of the produced OPV was 4 ⁇ 25 mm (area 1 cm 2 ) as seen in FIG. Heating during film formation other than vapor deposition was performed on a hot plate in all cases.
- carbon fiber is not contained in the film forming solution [carbon fiber-containing conductive polymer dispersion] for the upper electrode (transparent electrode) of the OPV of the comparative example.
- substrate used by OPV of Example B and the comparative example is the insulation smooth PCM (insulation smooth coating metal plate) which has the coating layer which consists of one clear coating film on the single side
- Each OPV was produced as follows.
- a 38 ⁇ 38 mm substrate was prepared by cutting the insulating smooth PCM, washed with distilled water and 2-propanol, and then a substrate electrode film-forming solution (PEDOT / PSS dispersion) was applied to the painted surface with a spin coater (after drying)
- a substrate electrode was formed with an expected film thickness of 1 ⁇ m.
- Electron transport layer (ZnO film): The precursor solution for electron transport layer was stirred for 30 minutes at 50 ° C., then formed into a film, and heated at 100 ° C. for 1 hour (dry film thickness 60 ⁇ m).
- Power generation layer (P3HT / PCBM film): The power generation layer film-forming solution was stirred at 50 ° C. for 6 hours and then formed into a film, and then naturally dried for 30 minutes (dry film thickness 200 ⁇ m).
- -Hole transport layer PEDOT / PSS film
- a film-forming solution for a hole transport layer was stirred at room temperature for 6 hours, and then formed (drying step unnecessary) (dry film thickness 110 ⁇ m).
- a transparent electrode was formed using a film forming solution for the upper electrode (transparent electrode) (conductive polymer dispersion containing carbon fiber).
- transparent electrode transparent electrode
- the same electrode as the transparent electrode of Test No. 43 of Example A is formed on the power generation unit (its hole transport layer) as the upper electrode by the drop cast method. did.
- a carbon single layer electrode made of a carbon film was formed as an upper electrode on the power generation section (its hole transport layer) by a vacuum deposition method.
- the prepared OPV was connected in series to an IV measuring apparatus (W32-6244SOL3X manufactured by System House Sunrise Co., Ltd.), and the current value was measured by sweeping the voltage in the range of -1.0 V to 1.0 V.
- an IV measuring apparatus W32-6244SOL3X manufactured by System House Sunrise Co., Ltd.
- a solar simulator XES-155S1 manufactured by Mitsunaga Electric Manufacturing Co., Ltd.
- pseudo sunlight of AM1.5G-100 mW / cm 2 was used. Then, simulated sunlight was irradiated from the upper electrode side to obtain an IV curve.
- FIG. 6 shows a schematic diagram of the IV curve.
- Short-circuit photocurrent density Jsc Photocurrent density at voltage 0 (A / cm 2 ) -Open photovoltage
- Voc photovoltage (V) at zero current ⁇
- Fill factor FF P / (Jsc ⁇ Voc)
- Energy conversion efficiency PCE (%) P / E ⁇ 100 (where P is the maximum electrical output (W / cm 2 ) of OPV)
- Table 6 shows the parameters of the manufactured OPV.
- the OPV of Example B1 has an improved fill factor FF and energy conversion efficiency PCE compared to the OPV of the comparative example. Thereby, it turns out that the power generation capability of OPV is improving by the transparent electrode of an Example.
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Abstract
Description
文献2: 日本国特開2013-185137号公報
文献3: 日本国特開2012-216535号公報
文献4: 日本国特開2012-219333号公報
文献5: 国際公開WO2010/106899号公報
文献6: 日本国特表2006-527454号公報
文献7: 日本国特開2013-152579号公報
文献8: 日本国特開2011-86482号公報
文献9: 日本国特開2012-201951号公報
文献10: 日本国特開2012-97343号公報
文献11: 日本国特開2011-204723号公報
文献12: Organic Electronics, 13 (2012) 2130-2137
一方、金属ナノワイヤを利用した透明電極では、金属ナノワイヤのコストが高い。さらに、金属ナノワイヤの網目構造のうち、金属ナノワイヤ以外の隙間部分(つまり、樹脂部分)には導電性がなく、透明電極としての導電性が低い。
導電性ポリマー層と、
前記導電性ポリマー層の厚さよりも大きい直径を有する複数の炭素繊維と、
を有し、
前記炭素繊維の一部が、前記導電性ポリマー層に埋め込まれている透明電極。
前記炭素繊維の直径が、前記導電性ポリマー層の厚さに対して2~90倍である請求項1に記載の透明電極。
前記炭素繊維の直径が2~15μmであり、前記導電性ポリマー層の厚さが5~650nmである請求項1又は請求項2に記載の透明電極。
前記炭素繊維の長さが、50~7000μmである請求項1~請求項3のいずれか1項に記載の透明電極。
前記透明電極の平面に垂直な方向から見たときの前記炭素繊維の面積率が、前記透明電極に対して40~90%である請求項1~請求項4のいずれか1項に記載の透明電極。
基板と、
前記基板上に配置される基板電極と、
前記基板電極上に配置される有機機能層と、
前記有機機能層上に配置される透明電極であって、請求項1~請求項5のいずれか1項に記載の透明電極と、
を備える有機電子デバイス。
前記基板が、塗装金属板、又はプラスチック基板である請求項6に記載の有機電子デバイス。
前記有機機能層が、光電変換層として発電層を有する有機機能層である請求項6又は請求項7に記載の有機電子デバイス。
前記基板電極、前記有機機能層、及び前記透明電極を封止する封止層を更に有する請求項6~請求項8のいずれか1項に記載の有機電子デバイス。
本実施形態に係る有機電子デバイス1は、図1に示すように、基板10と、基板10上に配置される基板電極11と、基板電極11上に配置される有機機能層12と、有機機能層12上に配置される透明電極13とを備える。また、有機電子デバイス1は、基板電極11、有機機能層12、及び透明電極13を封止する封止層14も備える。なお、封止層14は、必要に応じて設けられる層である。
基板10の素材は、特に制限されない。基板10は樹脂を含有してもよいし、ガラス等に代表される無機を含有してもよい。基板10は、光透過性を有していてもよいし、光透過性を有していなくてもよい。
基板電極11は、基板10上に配置される。基板電極11は周知の構成を有する。基板電極11は、例えば、金属薄膜である。金属薄膜は、例えば、アルミニウム、銀、金等の金属又は合金で構成された薄膜である。基板電極11は、金属ナノワイヤ、スズをドープした酸化インジウムスズ(ITO)、フッ素をドープした酸化スズ(FTO)、アルミニウムを添加した酸化亜鉛(ZAO)、グラフェン、導電性ポリマー等の薄膜であってもよい。
有機機能層12は、基板電極11上に配置される。有機機能層12は、基板電極11と透明電極13との間に配置される。有機電子デバイス1が光電変換素子である場合、有機機能層12は、例えば、光電変換層(発電層、発光層、受光層等)を有する有機機能層がある。有機機能層12は複数の層を含んでもよい。なお、有機機能層12が複数の層で構成される場合、有機機能層12とは、少なくとも一つの層が有機層で構成された層を意味する。
具体的には、有機機能層12は、例えば、光電変換層121と、光電変換層121の基板電極11側に設けられる電子輸送層122と、光電変換層121の透明電極13側に設けられる正孔輸送層123とを備える。なお、例えば、有機電子デバイス1が太陽電池である場合、光電変換層121は発電層であり、有機電子デバイス1が発光素子である場合、光電変換層121は発光層であり、有機電子デバイス1が撮像素子の場合、光電変換層121は受光層である。
透明電極13は、上部電極として有機機能層12上に配置される。透明電極13は、導電性ポリマー層131と、複数の炭素繊維132とを有する。
導電性ポリマー層131は、導電性ポリマーを含有する。導電性ポリマーは、電気を流すことのできる高分子である。導電性ポリマーは、好ましくは、芳香族炭素環、芳香族ヘテロ環又は複素環を、単結合又は二価以上の連結基で連結した非共役系高分子又は共役系高分子がある。
なお、導電性ポリマー層131の厚さの測定対象を、炭素繊維132間の中央部とするのは、炭素繊維132に近い領域は表面張力により導電性ポリマー層131が盛り上がって形成されているためである。
炭素繊維132は周知の炭素繊維である。炭素繊維132は、例えば、アクリル繊維を耐炎化・炭素化、又は、石油ピッチから不融化・炭素化・黒鉛化することで製造される。
炭素繊維132の直径は、導電性ポリマー層131の厚さよりも大きい。そのため、図2に示すように、炭素繊維132の一部が、導電性ポリマー層131に埋め込まれている。つまり、炭素繊維132の一部は導電性ポリマー層131内に含まれるものの、炭素繊維132の残部は導電性ポリマー層131から露出する。具体的には、例えば、複数の炭素繊維132は、その径方向の一方側の一部(例えば、その径方向の一方側の一部であって、外周面から直径の1/3までの領域(好ましくは1/4以下までの領域)の一部))が導電性ポリマー層131に埋まり込むようにして、点在して配置されている。
なお、炭素繊維132が他の炭素繊維132の上に重なって、導電性ポリマー層131上に配置されていてもよく、この場合、例えば、炭素繊維132は、他の炭素繊維132上に重なった領域及びその周囲を除く一部が導電性ポリマー層131に埋まり込んだ状態となっている。
なお、炭素繊維132を単独で採取可能な場合、炭素繊維132を直接観察して測定する。
なお、炭素繊維132を単独で採取可能な場合、炭素繊維132を直接観察して測定する。
封止層14は、透明電極13上に設けられ、基板電極11、有機機能層12、及び透明電極13を封止する層である。封止層14は、特に制限はなく、光透過性が高く、且つ、耐久性(耐候性、耐高温、耐高湿、耐候性等)、及び電気絶縁性を有する周知の封止材による封止層が適用される。
封止材としては、例えば、エチレン-酢酸ビニル共重合体(EVA)、ポリエチレンテレフタラート、ポリエチレンナフタレート、ポリエーテルサルフォン、ポリカーボネート等の樹脂封止材がある。
有機電子デバイス1及び透明電極13の製造方法の一例を説明する。
本実施形態に係る太陽電池モジュール2は、図4に示すように、塗装金属板10Aと、塗装金属板上に配置される複数の電池構造体(単セル)15と、とを備えている。なお、図示しないが、電池構造体(単セル)15を封止する封止層も備えている。そして、電池構造体15は、基板電極11と、基板電極11上に配置される発電部12Aと、発電部12A上に配置される透明電極13とを備えている。電池構造体(単セル)15において、基板電極、発電部及び透明電極の全てが重なった部分が発電箇所(発電領域)である。
塗装金属板10Aは、例えば、鋼板等の基材金属板101Aと、基材金属板101Aの表面に塗料を塗布して形成した塗装層102Aとを備えている。図4では、塗装層102Aは、基材金属板101Aの片面のみに設けた例を示しているが、基材金属板101Aの両面に設けてもよい。塗装層102Aを基材金属板101Aの片面のみに設けた場合、電池構造体15は、塗装金属板10Aの塗装層102Aが設けられた面上に形成される。
なお、塗装層102Aの最表層とは、塗装層102Aが1つの塗膜からなる場合、その塗膜が該当し、塗装層102Aが2以上の塗膜からなる場合、塗装層102Aの最表面に位置する塗膜が該当する。
なお、電池構造体15の作製が低温で可能である太陽電池モジュールにおいては、上記両者の熱膨張率の差により熱応力が生じにくいものの、太陽電池モジュールのより高い信頼性を得るためには、塗装層102Aは上記機能を有することがよい。
発電部12Aは、光電変換層121として発電層を有している。具体的には、発電部12Aは、例えば、光電変換層121としての発電層と、発電層の基板電極11側に設けられる電子輸送層122と、発電層の透明電極13側に設けられる正孔輸送層123とを備える(図1参照)。電子輸送層122及び正孔輸送層123は、必要に応じて設けられる層である。発電部12Aは、上記以外の他の層、例えば、正孔注入層、電子注入層、絶縁層、反射防止層等を有していてもよい。
p型有機半導体としては、特に限定されないが、P3HT(ポリ(3-ヘキシルチオフェン-2,5-ジイル)、チオフェン、フェニレンビニレン、チエニレンビニレン、カルバゾール、ビニルカルバゾール、ピロール、イソチアナフェン、イソチアナフェン、ヘプタジエン等の有機化合物が挙げられる。有機半導体としては、これら有機化合物に、水酸基、アルキル基、アミノ基、メチル基、ニトロ基及びハロゲン基からなる群から選択される少なくとも1つの基等を有する誘導体の重合体も挙げられる。p型有機半導体は、単独で用いてもよいし、二種以上を組み合わせて用いてもよい。
n型有機半導体としては、PCBM([6,6]-フェニルC61酪酸メチルエステル)、フラーレン誘導体、ペリレン誘導体等が挙げられる。これらの中でも、フラーレン誘導体は、p型有機半導体からの電子移動が取り分け早いので、特に好ましい。フラーレン誘導体としては、フラーレンC60の誘導体、フラーレンC70の誘導体、フラーレンC80の誘導体等が挙げられる。n型有機半導体は、市販品を利用することができる。例えば、P3HT/PCBMとしては、シグマ-アルドリッチ社製、フロンティアカーボン社製の製品等が使用可能である。
正孔輸送層123は、正孔輸送材料を含有する。正孔輸送材料としては、例えば、PEDOT/PSS、酸化モリブデン、酸化ニッケル、酸化タングステン等の金属酸化物等が挙げられる。
太陽電池モジュールの基板電極11、上部電極としての透明電極13、及び封止層については、有機電子デバイスで説明した基板電極11、透明電極13、及び封止層14と同様な構成である。このため、説明を省略する。
太陽電池モジュール2は、有機電子デバイス1の製造方法に準じて製造することができる。
なお、塗装金属板10A上に複数の電池構造体15(単セル)を連結する太陽電池モジュール2を製造するには、1)複数の電池構造体15を個別の塗装金属板10A上に製造した後それぞれの電極を結線する手法、1)一つの塗装金属板10A上に複数の複数の電池構造体15を形成し結線する手法等がある。例えば、連続プロセスで後者の構造をした太陽電池モジュール2を作製するには、塗装金属板10A上に基板電極11、発電部12A、透明電極13の順に帯状に製膜していく方法が取られることが多い。
表1~表3に示す試験番号1~57の透明電極を作製し、透明電極のシート抵抗値(Ω/sq)及び光透過率(%)を調査した。
・試験番号23~42: 日本グラファイトファイバー株式会社製の商品名GRANOC チョップドファイバー(直径=11μm、長さ=3mm)
・試験番号43~57: 日本グラファイトファイバー株式会社製の商品名GRANOC ミルドファイバー(直径=11μm、長さ=6mm)
作製された透明電極中の炭素繊維(CF)の含有量(質量%)を次の方法で求めた。まず、後述する方法で透明電極の光透過率を測定した。光透過率より炭素繊維の質量を算出し、別途、測定した導電性ポリマー層の厚さから計算される導電性ポリマー層の質量から、透明電極中の炭素繊維の含有量(質量%)を求めた。測定結果を表1~表3に示す。
各試験番号の透明電極に対して、次の方法によりシート抵抗(Ω/sq)を求めた。具体的には、三菱化学アナリテック株式会社製ロレスタ-GP MCP-T601型を用い、4端子4探針法によりシート抵抗値を測定した。
各試験番号の透明電極に対して、アジレント・テクノロジー社製の分光光度計(商品名Varian Cary 4000)を用いて、光透過率(%)を測定した。
表1~表3に試験結果を示したように、導電性ポリマー層の厚さよりも大きい直径を有する複数の炭素繊維の一部が導電性ポリマー層に埋め込まれている試験番号23~57の透明電極は、シート抵抗が100Ω/sq以下と低かった。さらに、試験番号23~57の透明電極は、光透過率が65%以上であった。一方、炭素繊維を有さない試験番号1~22の透明電極は、シート抵抗が100Ω/sqを超えた。
また、試験番号21、22の透明電極のシート抵抗値(101~103Ω/sq)が示すように、炭素繊維の直径が2μm未満になると、厚い導電性ポリマー層中で炭素繊維が重なり難い状況となり、透明電極のシート抵抗値は、導電性ポリマー層単体のシート抵抗値が支配的となり、100Ω/sqを超えることがある。このため、炭素繊維の直径は2μm以上とすることが好ましい。
また、試験番号11、12の透明電極のシート抵抗値(1899~2646Ω/sq)が示すように、導電性ポリマー層の厚みが5nm未満になると、炭素繊維同士をつなげる導電性ポリマー量が少なく、炭素繊維同士のネットワークが形成され難くい状況となり、透明電極のシート抵抗値は、導電性ポリマー層単体のシート抵抗値が支配的となり、100Ω/sqを超えることがある。このため、導電性ポリマー層の厚みは5nm以上とすることが好ましい。
また、試験番号21、22の透明電極のシート抵抗値(101~103Ω/sq)が示すように、炭素繊維の長さが0.050mm未満になると、炭素繊維が短く、炭素繊維同士のネットワークが形成され難くい状況となり、透明電極のシート抵抗値は、導電性ポリマー層単体のシート抵抗値が支配的となり、100Ω/sqを超えることがある。このため、炭素繊維の長さは0.050mm以上とすることが好ましい。
また、試験番号21、22の透明電極のシート抵抗値(101~103Ω/sq)が示すように、炭素繊維の面積率が40%未満になると、炭素繊維が少なく、炭素繊維同士のネットワークが形成され難くい状況となり、透明電極のシート抵抗値は、導電性ポリマー層単体のシート抵抗値が支配的となり、100Ω/sqを超えることがある。このため、炭素繊維の面積率は40%以上とすることが好ましい。
実施例Bでは、次に示す有機薄膜太陽電池(OPV)を作製した。
・実施例B1のOPV: 上部電極として、炭素繊維(CF)とPEDOT/PSS膜とで構成された透明電極(以下「PEDOT/PSS+CF膜」とも略記))を有するOPV
・比較例のOPV: 実施例B1のOPVの上部電極を、PEDOT/PSS膜(以下「PEDOT/PSS+CF膜」とも略記)で置換したOPV
ただし、比較例のOPVの上部電極(透明電極)用製膜溶液[炭素繊維含有導電性ポリマー分散液]には、炭素繊維を含まない。
絶縁平滑PCMを切断して38×38mmの基板を作製し、蒸留水と2-プロパノールで洗浄後、塗装面に基板電極用製膜溶液(PEDOT/PSS分散液)をスピンコータで塗布(乾燥後の予想膜厚1μm)して基板電極を形成した。
・電子輸送層(ZnO膜):電子輸送層用前駆体溶液を50℃で30分間撹拌後製膜し、100℃で1時間加熱(乾燥膜厚60μm)。
・発電層(P3HT/PCBM膜):発電層用製膜溶液を50℃で6時間撹拌後製膜し、30分間自然乾燥(乾燥膜厚200μm)。
・正孔輸送層(PEDOT/PSS膜):正孔輸送層用製膜溶液を常温で6時間撹拌後製膜(乾燥工程不要)(乾燥膜厚110μm)。
・短絡光電流密度Jsc:電圧0のときの光電流密度(A/cm2)
・開放光電圧Voc:電流0のときの光電圧(V)
・フィルファクターFF:P/(Jsc×Voc)
・エネルギー変換効率PCE(%)=P/E×100(ここでのPは、OPVの最大電気出力(W/cm2)である。)
これにより、実施例の透明電極により、OPVの発電能が向上していることがわかる。
本明細書に記載された全ての文献、特許出願、および技術規格は、個々の文献、特許出願、および技術規格が参照により取り込まれることが具体的かつ個々に記された場合と同程度に、本明細書中に参照により取り込まれる。
Claims (9)
- 導電性ポリマー層と、
前記導電性ポリマー層の厚さよりも大きい直径を有する複数の炭素繊維と、
を有し、
前記炭素繊維の一部が、前記導電性ポリマー層に埋め込まれている透明電極。 - 前記炭素繊維の直径が、前記導電性ポリマー層の厚さに対して2~90倍である請求項1に記載の透明電極。
- 前記炭素繊維の直径が2~15μmであり、前記導電性ポリマー層の厚さが5~650nmである請求項1又は請求項2に記載の透明電極。
- 前記炭素繊維の長さが、50~7000μmである請求項1~請求項3のいずれか1項に記載の透明電極。
- 前記透明電極の平面に垂直な方向から見たときの前記炭素繊維の面積率が、前記透明電極に対して40~90%である請求項1~請求項4のいずれか1項に記載の透明電極。
- 基板と、
前記基板上に配置される基板電極と、
前記基板電極上に配置される有機機能層と、
前記有機機能層上に配置される透明電極であって、請求項1~請求項5のいずれか1項に記載の透明電極と、
を備える有機電子デバイス。 - 前記基板が、塗装金属板、又はプラスチック基板である請求項6に記載の有機電子デバイス。
- 前記有機機能層が、光電変換層として発電層を有する有機機能層である請求項6又は請求項7に記載の有機電子デバイス。
- 前記基板電極、前記有機機能層、及び前記透明電極を封止する封止層を更に有する請求項6~請求項8のいずれか1項に記載の有機電子デバイス。
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