WO2015136864A1 - Appareil de génération d'énergie électrique - Google Patents

Appareil de génération d'énergie électrique Download PDF

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Publication number
WO2015136864A1
WO2015136864A1 PCT/JP2015/000919 JP2015000919W WO2015136864A1 WO 2015136864 A1 WO2015136864 A1 WO 2015136864A1 JP 2015000919 W JP2015000919 W JP 2015000919W WO 2015136864 A1 WO2015136864 A1 WO 2015136864A1
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WIPO (PCT)
Prior art keywords
power generation
cantilever
substrate
base
generation element
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PCT/JP2015/000919
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English (en)
Japanese (ja)
Inventor
純矢 小川
博之 柳生
貴司 中川
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パナソニックＩｐマネジメント株式会社
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Publication of WO2015136864A1 publication Critical patent/WO2015136864A1/fr

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
    • H02N2/18—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators
    • H02N2/185—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators using fluid streams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/304—Beam type
    • H10N30/306—Cantilevers

Definitions

  • the present invention relates to a power generation device, and more particularly to a fluid vibration power generation device that generates power using fluid-induced vibration.
  • the power generation device 201 has a base 211 and a lead 213 to which the piezoelectric element 214 is fixed.
  • the lead 213 has flexibility capable of bending and vibrating in the thickness direction.
  • the leads 213 are flexible printed circuit boards formed of FRP or the like.
  • the leads 213 are positioned with one end 231 fixed to the top surface of the plate 215 and the other end 232 facing the window 212 so that the window 212 can be freely moved in and out.
  • the leads 213 are slightly inclined with respect to the upper surface of the plate 215 so that the end 232 is located outside the window 212 (the side where the gas F1 flows in) ( Is up).
  • the piezoelectric element 214 is a bimorph piezoelectric element, and is fixed to both surfaces of the lead 213 as shown in FIGS. 4B and 4C.
  • Document 1 states that the piezoelectric element 214 may be a unimorph piezoelectric element fixed to one of the front surface and the back surface of the lead 213.
  • the present invention has been made in view of the above, and an object thereof is to provide a power generation apparatus capable of improving the power generation efficiency.
  • the power generation element including the substrate and the piezoelectric conversion portion overlaps the base including the support portion, the cantilever portion, and the gap (flow path). They are joined and arranged apart from the gap (flow path) and straddling the support portion and the cantilever portion in plan view.
  • the power generation device according to the above aspect of the present invention shifts the position of the neutral plane of the power generation device from the neutral plane of the substrate to the cantilever portion side in the thickness direction of the power generation device, It is possible to improve power generation efficiency.
  • the power generation device it is possible to suppress that the area and shape of the gap (flow path) change due to the relative positional accuracy between the base and the power generation element. It is possible to achieve cost reduction by downsizing of the power generation element. Further, in the power generation device according to the above aspect of the present invention, since the hole penetrating in the thickness direction of the cantilever portion is formed in the vertical projection area of the power generation element in the cantilever portion It becomes possible to make it low and to improve the power generation efficiency.
  • FIG. 1A is a schematic plan view of a power generation device according to an embodiment.
  • FIG. 1B is a schematic cross-sectional view along the line XX in FIG. 1A.
  • FIG. 2A is a schematic plan view of a base in the power generation device of the embodiment.
  • FIG. 2B is a schematic cross-sectional view taken along line XX in FIG. 2A.
  • FIG. 3A is a schematic plan view of the power generation element in the power generation device of the embodiment.
  • FIG. 3B is a schematic cross-sectional view taken along line XX in FIG. 3A.
  • FIG. 4A is a schematic plan view of a conventional power generation device.
  • FIG. 4B is a schematic cross-sectional view along line XX in FIG. 4A.
  • FIG. 4C is a YY schematic cross-sectional view of FIG. 4A.
  • FIG. 1A, 1B, 2A, 2B, 3A, 3B the electric power generating apparatus 1 of this embodiment is demonstrated based on FIG. 1A, 1B, 2A, 2B, 3A, 3B.
  • the power generation device 1 includes a base 2 and a power generation element 3.
  • the base 2 is formed between a frame-shaped support portion 21, a cantilever portion 22 disposed inside the support portion 21 and swingably supported by the support portion 21, and between the support portion 21 and the cantilever portion 22. And a gap (i.e., a flow path 23 configured by the gap).
  • the power generation element 3 includes a substrate 30 which is smaller than the base 2 and has flexibility in plan view, and a piezoelectric conversion portion 36 formed on the surface 30 a of the substrate 30.
  • the power generation element 3 is overlapped and joined to the base 2.
  • the power generation element 3 is disposed apart from the flow path 23 and straddling the support portion 21 and the cantilever portion 22 in plan view.
  • the cantilever portion 22 is formed with a hole 24 penetrating in the thickness direction of the cantilever portion 22 in the vertical projection area of the power generation element 3. Therefore, in the power generation device 1, the power generation element 3 including the substrate 30 and the piezoelectric conversion portion 36 is overlapped and bonded to the base 2 including the support portion 21, the cantilever portion 22 and the flow path 23. It is separated from the flow path 23 and disposed across the support portion 21 and the cantilever portion 22 (in particular, as shown in FIG. 1B, the power generation element 3 is opposed to the flow path 23 in the length direction of the cantilever portion 22 Placed relatively long distances).
  • the power generation device 1 shifts the position of the neutral plane of the power generation device 1 from the neutral plane of the substrate 30 to the cantilever portion 22 side, it is possible to improve the power generation efficiency. Further, in the power generation device 1, it is possible to suppress that the area, shape, etc. of the flow path 23 change due to the relative positional accuracy between the base 2 and the power generation element 3, and it becomes possible to improve power generation efficiency. It is possible to reduce the cost by miniaturizing the element 3. Further, in the power generation device 1, the hole 24 penetrating in the thickness direction of the cantilever portion 22 is formed in the vertical projection area of the power generation element 3 in the cantilever portion 22. Therefore, the rigidity of the cantilever portion 22 decreases, and even when the flow velocity of the fluid is lower or the flow rate of the fluid is smaller, it is possible to cause the vibration of the cantilever portion 22 to improve the power generation efficiency. It becomes possible.
  • the base 2 can be formed of, for example, a metal substrate. Thereby, the power generation device 1 can suppress the attenuation of the vibration energy of the cantilever portion 22 in the base 2.
  • a material of the metal substrate a material having a low logarithmic attenuation rate is preferable, and, for example, stainless steel can be adopted.
  • stainless steel for example, austenitic stainless steel is preferable, and SUS304 (18Cr-8Ni) can be mentioned.
  • the material of the metal substrate is not limited to stainless steel, and, for example, titanium, aluminum, brass, phosphor bronze, beryllium copper or the like can be adopted.
  • the channels 23 and the holes 24 of the base 2 can be formed, for example, by performing a wet etching process on a metal substrate.
  • the support part 21 and the cantilever part 22 are formed by forming the flow path 23 with respect to a metal substrate.
  • the cantilever portion 22 is disposed inside the support portion 21 in a plan view.
  • the base 2 forms a U-shaped channel 23 in a plan view surrounding the cantilever portion 22, whereby the portion of the cantilever portion 22 other than the connection portion with the support portion 21 is separated from the support portion 21.
  • the cantilever portion 22 is supported by the support portion 21 in a cantilever manner.
  • the minimum width of the flow path 23 of the base 2 is 20 micrometers or more and 100 micrometers or less.
  • the power generation device 1 can suppress the vibration of the cantilever portion 22 from becoming difficult to occur regardless of the flow velocity, the flow rate, and the like of the fluid.
  • the minimum width of the flow path 23 is not less than 20 ⁇ m and not more than 100 ⁇ m, the power generation device 1 can reduce the flow velocity of the generation limit velocity of the fluid excitation vibration and improve the power generation efficiency. It becomes possible.
  • the fluid excitation vibration is a vibration of the cantilever portion 22 generated by the fluid flowing in the flow field passing through the flow path 23 in a state where the power generation device 1 is disposed in the flow field or the like.
  • This fluid-induced vibration is self-oscillation.
  • the fluid include air, gas, a mixed gas of air and gas, liquid and the like.
  • the flow field include the inside of the air supply duct of the air conditioner, the inside of the air exhaust duct of the air conditioner, and the like, but are not particularly limited.
  • the generation limit flow velocity of the fluid excitation vibration means the lower limit value of the flow velocity at which the self-excited vibration of the cantilever portion 22 can occur.
  • the generation limit flow velocity of the cantilever portion 22 that receives fluid and vibrates by itself is proportional to the square root of the mass per unit length of the cantilever portion 22.
  • the mechanism for estimating the operation of the power generation device 1 is self-excitation due to the force acting on the cantilever portion 22 when the fluid passes through the flow path 23 and the restoring force due to the spring property of the cantilever portion 22 and the substrate 30. It is estimated that vibration occurs.
  • the fluid flow direction coincides with the thickness direction of the base 2, and the surface 22a of the cantilever portion 22 is on the upstream side of the fluid, and the back surface 22b of the cantilever portion 22 is on the downstream side of the fluid. It is preferable to use it.
  • the flow velocity is increased when the fluid flowing from the upstream side toward the power generation device 1 passes through the flow path 23.
  • the pressure on the back surface 22b side of the cantilever portion 22 decreases, and the cantilever portion 22 is displaced. Further, in the power generation device 1, the cantilever portion 22 is displaced by the force of the fluid flowing from the upstream side toward the power generation device 1. Then, in the power generation device 1, when the restoring force of the cantilever portion 22 becomes larger than the force received from the fluid, it is inferred that the cantilever portion 22 is displaced in the direction of returning to the original position. In the power generation device 1, it is considered that the cantilever portion 22 self-excites and the piezoelectric conversion portion 36 generates power by repeating such an operation.
  • the resonant frequency of the power generation device 1 is determined by the mass and rigidity of the cantilever portion 22, the mass and rigidity of the substrate 30, and the like. Note that the power generation device 1 of the present embodiment is within the scope of the present invention even if the estimation mechanism is different.
  • the cantilever portion 22 includes a pair of beam portions 25 and a weight portion 26, the first end 25 a in the longitudinal direction of each beam portion 25 is fixed to the support portion 21, and the longitudinal direction of each beam portion 25 The second end 25 b is preferably fixed to the weight 26.
  • the longitudinal direction of the beam portion 25 is the same as the longitudinal direction of the cantilever portion 22.
  • the beam portion 25 is formed in a cantilever shape.
  • the cantilever portion 22 has the same thickness as that of the beam portion 25 and the thickness of the weight portion 26 but is not limited thereto.
  • the thickness of the beam portion 25 may be thinner than the thickness of each of the support portion 21 and the weight portion 6.
  • the thickness of the weight portion 26 may be thicker than the thickness of each of the support portion 21 and the beam portion 25.
  • the hole 24 may have, for example, a rectangular opening as shown in FIG. 2A.
  • the opening size of the hole 24 is smaller than the size of the power generation element 3 in plan view.
  • the hole 24 is preferably formed over the entire length of the beam 25 in the longitudinal direction.
  • the base 2 of this embodiment has one hole 24, the number of holes is not limited to one, and a plurality of holes may be provided. Even when the base 2 includes a plurality of holes, all the holes are formed in the vertical projection area of the power generation element 3 in the cantilever portion 22.
  • the opening shape of the hole 24 and the opening shape of the plurality of holes are not limited to the rectangular shape, and may be, for example, a circular shape or a polygonal shape other than a rectangular shape.
  • the power generation element 3 can be manufactured using a manufacturing technique of MEMS (Micro Electro Mechanical Systems) or the like.
  • the outer peripheral shape of the substrate 30 is preferably rectangular. As a result, in the method of manufacturing the power generation device 1, it is possible to improve the workability at the time of dicing in the subsequent step after performing the previous step of forming the plurality of power generation elements 3 on the silicon wafer. Further, in the method of manufacturing the power generation device 1, the rectangular shape of the outer periphery of the substrate 30 facilitates handling of the power generation element 3 and positioning of the power generation element 3 with respect to the base 2.
  • the substrate 30 includes a silicon substrate 31 and an insulating film 32 formed on the surface of the silicon substrate 31.
  • the insulating film 32 has electrical insulation.
  • the insulating film 32 can be made of, for example, a silicon oxide film.
  • the insulating film 32 can be formed, for example, by a thermal oxidation method.
  • the method of forming the insulating film 32 is not limited to the thermal oxidation method, and may be, for example, the CVD method.
  • the insulating film 32 is not limited to the silicon oxide film alone, and may be, for example, a laminated film of a silicon oxide film and a silicon nitride film.
  • the silicon substrate 31 and the piezoelectric conversion portion 36 are electrically insulated by the insulating film 32.
  • the thickness of the silicon substrate 31 is set to 50 ⁇ m.
  • the thickness of the substrate 30 is not limited to 50 ⁇ m, and is preferably set, for example, in the range of 20 ⁇ m to 100 ⁇ m.
  • the thickness of the insulating film 32 is set to 1 ⁇ m.
  • the thickness of the insulating film 32 is not limited to 1 ⁇ m, and is preferably set in the range of 0.5 ⁇ m to 3 ⁇ m, for example.
  • the piezoelectric conversion portion 36 is formed on the surface 30 a of the substrate 30.
  • the piezoelectric conversion portion 36 includes a first electrode 33 formed on the surface 30 a of the substrate 30, a piezoelectric layer 34 formed on the first electrode 33, and a second electrode 35 provided on the piezoelectric layer 34. And.
  • the piezoelectric conversion portion 36 includes the piezoelectric layer 34 and the first electrode 33 and the second electrode 35 opposed to each other with the piezoelectric layer 34 interposed from both sides in the thickness direction.
  • PZT Pb (Zr, Ti) O 3
  • PZT-PMN Pb (Mn, Nb) O 3
  • the piezoelectric material may be AlN, ZnO, KNN (K 0.5 Na 0.5 NbO 3 ), KN (KNbO 3 ), NN (NaNbO 3 ), a material obtained by adding an impurity to KNN, or the like.
  • an impurity Li, Nb, Ta, Sb, Cu etc. can be mentioned, for example.
  • the piezoelectric layer 34 is formed of a piezoelectric thin film.
  • the material of the first electrode 33 is Pt, but not limited to this, for example, Au, Al, Ir or the like may be used. Moreover, although Au is adopted as a material of the second electrode 35, the material is not limited to this, and for example, Mo, Al, Pt, Ir or the like may be used.
  • the thickness of the first electrode 33 is set to 500 nm
  • the thickness of the piezoelectric layer 34 is set to 3000 nm
  • the thickness of the second electrode 35 is set to 500 nm, but the present invention is not limited to these values. .
  • the power generation element 3 may have a structure in which a buffer layer is provided between the substrate 30 and the first electrode 33.
  • the material of the buffer layer is preferably selected as appropriate according to the piezoelectric material of the piezoelectric layer 34.
  • the piezoelectric material of the piezoelectric layer 34 is PZT, it is preferable to use, for example, SrRuO 3 , (Pb, La) TiO 3 , PbTiO 3 , MgO, LaNiO 3 or the like as the material of the buffer layer.
  • the buffer layer may be formed of, for example, a laminated film of a Pt film and a SrRuO 3 film.
  • the power generation element 3 includes a first pad electrode 38 and a second pad electrode 39.
  • the first pad electrode 38 and the second pad electrode 39 are formed on the surface 30 a of the substrate 30.
  • the first pad electrode 38 and the second pad electrode 39 are preferably disposed within the vertical projection area of the support portion 21 on the surface 30 a of the substrate 30.
  • the first pad electrode 38 is electrically connected to the first electrode 33 via the first conductive portion 41.
  • the second pad electrode 39 is electrically connected to the second electrode 35 via the second conductive portion 42.
  • Au is adopted as a material of the first conductive portion 41, the second conductive portion 42, the first pad electrode 38 and the second pad electrode 39, the invention is not limited thereto.
  • Mo, Al, Pt, Ir Etc is adopted as a material of the first conductive portion 41, the second conductive portion 42, the first pad electrode 38 and the second pad electrode 39
  • the invention is not limited thereto.
  • Mo, Al, Pt, Ir Etc the materials of the first conductive portion 41, the second conductive portion 42, the first pad electrode 38, and the second pad electrode 39 are not limited to the same material, and different materials may be adopted.
  • the first conductive portion 41, the second conductive portion 42, the first pad electrode 38, and the second pad electrode 39 are not limited to a single layer structure, and may have a multilayer structure of two or more layers.
  • an insulating layer 37 for preventing a short circuit between the second conductive portion 42 and the first electrode 33 is provided between the second conductive portion 42 and the peripheral portion of the first electrode 33.
  • the insulating layer 37 is formed of a silicon oxide film, but is not limited to a silicon oxide film, and may be formed of, for example, a silicon nitride film.
  • the piezoelectric layer 34 of the piezoelectric conversion portion 36 is stressed by the vibration of the cantilever portion 22, so that charge imbalance occurs between the second electrode 35 and the first electrode 33, and AC voltage is generated in the piezoelectric conversion portion 36. Occur.
  • the piezoelectric conversion unit 36 generates power using the piezoelectric effect of the piezoelectric material.
  • the alternating voltage generated by the piezoelectric conversion unit 36 is a sinusoidal alternating voltage corresponding to the vibration of the piezoelectric layer 34.
  • the planar shape of the piezoelectric layer 34 is rectangular.
  • the piezoelectric conversion portion 36 preferably has an outer size of the piezoelectric layer 34 slightly smaller than an outer size of the first electrode 33 and slightly larger than an outer size of the second electrode 35.
  • the piezoelectric conversion unit 36 has a piezoelectric conversion region 36 a.
  • the piezoelectric conversion area 36 a means an area where the first electrode 33, the piezoelectric layer 34 and the second electrode 35 overlap in the thickness direction of the substrate 30. In the piezoelectric conversion portion 36, the piezoelectric conversion region 36a contributes to the generation of an alternating voltage.
  • the silicon substrate 31 is prepared, and then the insulating film 32 is formed on the silicon substrate 31 to perform the first step of forming the substrate 30.
  • the insulating film 32 is formed on the silicon substrate 31 using a thermal oxidation method or the like.
  • the thermal oxidation method for example, the CVD method may be employed.
  • the second step of forming a first conductive layer to be the basis of the first electrode 33 and the first conductive portion 41 is performed on the entire surface 30 a side of the substrate 30, and then the piezoelectric layer
  • a third step of forming a piezoelectric material layer which is the basis of V.34 is performed.
  • the sputtering method is employed as a method of forming the first conductive layer, but the method is not limited to this, and for example, a CVD method, a vapor deposition method, or the like may be employed.
  • a sputtering method is employed as a method of forming the piezoelectric material layer, but the method is not limited to this, and for example, a CVD method, a sol-gel method, or the like may be employed.
  • the fourth step of patterning the piezoelectric material layer into the predetermined shape of the piezoelectric layer 34 is performed, and subsequently, the first conductive layer is formed into the predetermined shape of the first electrode 33 and the first conductive portion 41
  • the fifth step of patterning is performed.
  • the piezoelectric material layer is patterned using lithography technology and etching technology.
  • the first conductive layer is patterned using lithography and etching.
  • the sixth step of forming the insulating layer 37 on the surface 30 a side of the substrate 30 is performed.
  • the seventh step of forming a second conductive layer which is a basis of the second electrode 35 and the second conductive portion 42 on the entire surface 30 a side of the substrate 30 is performed.
  • an eighth step of patterning the second conductive layer into a predetermined shape of the second electrode 35 and the second conductive portion 42 is performed.
  • the insulating layer 37 is formed using a lift-off method, but the insulating layer 37 may be formed using, for example, a thin film forming technique, a lithography technique, and an etching technique. .
  • a sputtering method is employed as a method of forming the second conductive layer, but the method is not limited to this, and for example, a CVD method, a vapor deposition method, or the like may be employed.
  • the second conductive layer is patterned using lithography and etching.
  • the ninth step is performed in which a third conductive layer which is a basis of the first pad electrode 38 and the second pad electrode 39 is formed over the entire surface 30 a of the substrate 30.
  • a tenth step of patterning the third conductive layer into predetermined shapes of the first pad electrode 38 and the second pad electrode 39 is performed.
  • the power generation element 3 is divided into individual power generation elements 3 by performing the dicing step after performing the process at the wafer level until the end of the tenth step.
  • the piezoelectric conversion portion 36 has the above-described piezoelectric conversion region 36 a, and one end of the piezoelectric conversion region 36 a in the length direction of the cantilever portion 22 is aligned with the boundary between the support portion 21 and the cantilever portion 22 Are preferably located at
  • the power generation device 1 can increase the area of the piezoelectric conversion region 36a compared to the case where one end of the piezoelectric conversion region 36a in the length direction of the cantilever portion 22 is on the cantilever portion 22 side than the boundary, and the power generation efficiency is improved. It is possible to improve.
  • the power generation device 1 does not contribute to power generation in the piezoelectric conversion region 36a compared to when the one end of the piezoelectric conversion region 36a in the length direction of the cantilever portion 22 is on the support portion 21 side with respect to the boundary. It becomes possible to reduce the part which becomes dead and to improve power generation efficiency.
  • the holes 24 of the base 2 are preferably formed with an aperture size aligned with the vertical projection area of the piezoelectric conversion area 36a.
  • the power generation device 1 forms the support portion 21, the cantilever portion 22 and the flow path 23 on the base 2 which is a separate member from the power generation element 3, a silicon wafer is adopted as a wafer to be a base of the substrate 30 of the power generation element 3. It is possible to Therefore, the power generation device 1 can achieve cost reduction as compared with the case of adopting an SOI wafer as a wafer to be a base of the substrate 30 of the power generation element 3.
  • the first end 301 of the substrate 30 in the lengthwise direction of the cantilever portion 22 is bonded to the support portion 21, and the second end 302 of the substrate 30 in the lengthwise direction of the cantilever portion 22 is the cantilever portion 22. It is preferable to be joined. Thus, the power generation device 1 can improve the power generation efficiency.
  • the piezoelectric conversion portion 36 be formed on the portion between the first end portion 301 and the second end portion 302 in the substrate 30.
  • the first end 301 of the substrate 30 is bonded to the support 21 of the base 2 via the first bonding portion 51, and the second end 302 of the substrate 30 is bonded via the second bonding portion 52.
  • the base 2 can be bonded to the cantilever portion 22 of the base 2.
  • a material of the first bonding portion 51 and the second bonding portion 52 for example, an organic resin-based die bonding material, AuSn solder, low melting point glass, or the like can be adopted.
  • an organic resin die bonding material for example, an acrylic adhesive, an epoxy adhesive and the like can be mentioned.
  • the thickness of the support portion 21 may be thicker than the thickness of the cantilever portion 22.
  • the power generation device 1 can further increase the rigidity of the support portion 21 and can suppress the vibration energy of the cantilever portion 22 from being dissipated from the support portion 21. Therefore, the power generation device 1 can improve the power generation efficiency.
  • the power generation element 3 may be configured such that the thickness of each of the first end portion 301 and the second end portion 302 in the substrate 30 is thicker than the thickness of the portion directly below the piezoelectric conversion portion 36 in the substrate 30.
  • the power generation device 1 can suppress the vibration energy of the portion of the substrate 30 immediately below the piezoelectric conversion portion 36 from being dissipated from the first end portion 301 and the second end portion 302 of the substrate 30. Therefore, the power generation device 1 can improve the power generation efficiency.
  • the cantilever portion 22 includes the beam portion 25 and the weight portion 26.
  • the first end 25 a in the longitudinal direction of the beam 25 is fixed to the support 21, and the second end 25 b in the longitudinal direction of the beam 25 is fixed to the weight 26, It is preferable that the second end 302 of the substrate 30 of the power generation element 3 be joined to the weight 26.
  • the power generation device 1 can increase the inertial force when the cantilever part 22 vibrates by making the cantilever part 22 include the weight part 26 compared with the case where the weight part 26 is not provided, and the amplitude of the cantilever part 22 becomes large. It is possible to Further, in the power generation device 1, the cantilever portion 22 includes the weight portion 26, so that distortion can be generated intensively in the beam portion 25 and the power generation element 3 when the cantilever portion 22 vibrates. It is possible to improve.
  • the base 2 is not limited to the configuration formed of a metal substrate.
  • the base 2 may be formed of, for example, a resin substrate.
  • the power generation device 1 can achieve cost reduction as compared to the case where the base 2 is formed of a metal substrate.
  • a material of the resin substrate for example, acrylic resin, polyimide or the like can be adopted.
  • the power generation element 3 includes the first pad electrode 38 and the second pad electrode 39.
  • the base 2 may be configured to include a first conductor portion and a second conductor portion which are formed of a printed circuit board and to which the first pad electrode 38 and the second pad electrode 39 are electrically connected, respectively.
  • the power generation device 1 can use electronic components and the like to which the power generation element 3 is electrically connected and mounted on the base 2.
  • the configuration of the present invention has been described above based on the embodiment and the like, but the present invention is not limited to the configuration of the embodiment and the like, and is a configuration in which partial configurations of the embodiment and the like are combined as appropriate. May be Further, the materials, numerical values, and the like described in the embodiments and the like only exemplify preferable ones, and are not limited thereto. Furthermore, in the present invention, it is possible to appropriately change the configuration without departing from the scope of the technical idea thereof.

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  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)

Abstract

La présente invention porte sur un appareil de génération d'énergie électrique apte à améliorer l'efficacité de génération de puissance. Un appareil de génération d'énergie électrique (1) comporte une base (2) et un élément de génération d'énergie électrique(3). La base (2) comporte : une section de support de type cadre (21) ; une section en porte-à-faux (22), qui est disposée sur le côté interne de la section de support (21), et qui est portée de manière oscillante au moyen de la section de support (21) ; et un espace formé entre la section de support (21) et la section en porte-à-faux (22). L'élément de génération d'énergie électrique (3) comporte : un substrat flexible (30) qui est plus petit que la base (2) ; et une section de conversion piézoélectrique (36) qui est formée sur une surface (30a) du substrat (30). L'élément de génération d'énergie électrique (3) est lié à la base (2) par chevauchement avec la base. Dans une vue en plan, l'élément de génération d'énergie électrique (3) réalise un pont entre la section de support (21) et la section en porte-à-faux (22) en étant séparé de l'espace. La section en porte-à-faux (22) a un trou (24) formé dans une région de projection verticale de l'élément de génération d'énergie électrique (3), ledit trou pénétrant dans la section en porte-à-faux (22) dans la direction d'épaisseur.
PCT/JP2015/000919 2014-03-10 2015-02-24 Appareil de génération d'énergie électrique WO2015136864A1 (fr)

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JP2014-046663 2014-03-10
JP2014046663A JP2015171295A (ja) 2014-03-10 2014-03-10 発電装置

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170033713A1 (en) * 2014-04-11 2017-02-02 Fondazione Istituto Italiano Di Tecnologia Device for harvesting energy from a fluidic flow including a thin film of piezoelectric material

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