WO2015102256A1 - 기판처리장치 및 기판처리방법 - Google Patents
기판처리장치 및 기판처리방법 Download PDFInfo
- Publication number
- WO2015102256A1 WO2015102256A1 PCT/KR2014/012124 KR2014012124W WO2015102256A1 WO 2015102256 A1 WO2015102256 A1 WO 2015102256A1 KR 2014012124 W KR2014012124 W KR 2014012124W WO 2015102256 A1 WO2015102256 A1 WO 2015102256A1
- Authority
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- WIPO (PCT)
- Prior art keywords
- zones
- reaction gas
- partition member
- substrate
- buffer space
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 60
- 238000003672 processing method Methods 0.000 title description 3
- 239000012495 reaction gas Substances 0.000 claims abstract description 59
- 239000007789 gas Substances 0.000 claims abstract description 38
- 238000009792 diffusion process Methods 0.000 claims abstract description 37
- 238000005192 partition Methods 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 24
- 238000000638 solvent extraction Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 description 22
- 238000002347 injection Methods 0.000 description 11
- 239000007924 injection Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Definitions
- the present invention relates to a substrate processing apparatus and a substrate processing method, and more particularly, a substrate processing apparatus and a substrate for supplying a reaction gas by dividing a buffer space into a plurality of diffusion zones and installing a gas supply port in each diffusion zone. It relates to a treatment method.
- the semiconductor device has many layers on a silicon substrate, and these layers are deposited on the substrate through a deposition process.
- This deposition process has several important issues, which are important in evaluating the deposited films and selecting the deposition method.
- the first is the 'qulity' of the deposited film. This means composition, contamination levels, defect density, and mechanical and electrical properties.
- the composition of the films can vary depending on the deposition conditions, which is very important for obtaining a specific composition.
- the second is uniform thickness across the wafer.
- the thickness of the film deposited on the nonplanar pattern on which the step is formed is very important. Whether the thickness of the deposited film is uniform may be determined through step coverage defined by dividing the minimum thickness deposited on the stepped portion by the thickness deposited on the upper surface of the pattern.
- Another issue with deposition is filling space. This includes gap filling between the metal lines with an insulating film including an oxide film. The gap is provided to physically and electrically insulate the metal lines.
- uniformity is one of the important issues associated with the deposition process, and non-uniform films result in high electrical resistance on metal lines and increase the likelihood of mechanical failure.
- An object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can ensure the process uniformity.
- the substrate processing apparatus the upper chamber is open lower chamber; An upper chamber that opens and closes an upper portion of the lower chamber and forms an inner space in which a process for a substrate is performed together with the lower chamber; A shower head installed at a lower portion of the upper chamber to supply a reaction gas toward the inner space, and a buffer space formed between the upper chamber; A partition member installed in the buffer space to partition the buffer space into a plurality of diffusion zones; And a plurality of gas supply ports formed in the upper chamber to supply the reaction gas toward each of the diffusion zones.
- the diffusion zone includes a central zone and a plurality of edge zones
- the partition member includes: an inner compartment member disposed around the center of the buffer space and partitioning the central zone formed inside and the edge zones formed outside; It may include a plurality of connecting members connected to the outside of the inner partition member to block the edge zones from each other.
- Each of the gas supply ports may be connected to each of the edge zones.
- the diffusion zone includes a central zone, a plurality of intermediate zones, and a plurality of edge zones, and the partition member is disposed around the center of the buffer space, the central zone formed inside and the intermediate zone formed outside.
- Each gas supply port may be connected to each of the edge zones and each of the intermediate zones.
- the substrate processing apparatus includes a plurality of gas supply lines connected to respective gas supply ports to supply the reaction gas; A plurality of flow regulators that open and close each of the gas supply lines; And a controller connected to each of the flow controllers to control a supply amount of the reaction gas through each gas supply line.
- the controller may control the flow controllers such that the supply amount of the reaction gas supplied to any one of the gas supply lines is different from the supply amount of the reaction gas supplied to the other.
- the partition member may be spaced apart from the bottom surface of the buffer space.
- the substrate processing apparatus includes: a susceptor installed in the inner space and having the substrate placed thereon; An exhaust ring spaced along the side wall of the lower chamber and having a plurality of exhaust holes positioned above the susceptor; And a support member fixed to the side wall of the lower chamber to support the exhaust ring, wherein an exhaust space is formed between the side wall of the lower chamber and the exhaust ring to communicate with the exhaust port formed on the side wall of the lower chamber. Can be.
- the process area is different from that of the substrate corresponding to any one of the diffusion regions and that of the substrate corresponding to the other one.
- the buffer space may have a central zone positioned at the center of the shower head and an edge zone disposed around the central zone.
- FIG. 1 is a cross-sectional view schematically showing a substrate processing apparatus according to an embodiment of the present invention.
- FIG. 2 is a perspective view illustrating the lower compartment member illustrated in FIG. 1.
- FIG. 3 is a perspective view illustrating the upper compartment member shown in FIG. 1.
- FIG. 4 is a cross-sectional view schematically showing the flow of the reaction gas of the substrate processing apparatus shown in FIG.
- FIG. 5 is a plan view schematically illustrating the flow of the reaction gas on the substrate shown in FIG. 1.
- FIG. 6 is a cross-sectional view schematically showing a substrate processing apparatus according to another embodiment of the present invention.
- FIG. 7 is a perspective view illustrating the partition member shown in FIG. 6.
- FIG. 7 is a perspective view illustrating the partition member shown in FIG. 6.
- FIG. 8 is a cross-sectional view schematically showing the flow of the reaction gas of the substrate processing apparatus shown in FIG. 6.
- the substrate processing apparatus includes a lower chamber 10 and an upper chamber 20.
- the lower chamber 10 has an open top shape, and the upper chamber 20 opens and closes an open upper part of the lower chamber 10.
- the upper chamber 20 closes the open upper portion of the lower chamber 10, the lower chamber 10 and the upper chamber 20 form an inner space 3 closed from the outside.
- the susceptor 30 is installed in the lower chamber 10, and the substrate W is placed on the susceptor 30.
- the susceptor 30 includes a heater (not shown), and the heater may heat the substrate W to a process temperature through a current applied from an external power source.
- the support 35 is connected to the lower part of the susceptor 30 to support the susceptor 30 and is installed through the bottom of the lower chamber 10.
- the bellows 38 is installed around the support 35, and can block the internal space 3 from the outside through the bellows 38.
- the partition member may be installed in the buffer space and fixed to the shower head 60, and partitions the buffer space into a plurality of diffusion zones.
- the partition member is spaced apart from the bottom surface of the buffer space, a lower buffer space 77 is formed in communication with the injection holes 65 in the lower portion of the partition member.
- the lower buffer space 77 may substantially match the diameter of the susceptor 30.
- the upper buffer space is located above the lower buffer space 77, and is partitioned into a central zone, intermediate zones, and edge zones by a partition member. Detailed description will be described later.
- FIG. 2 is a perspective view illustrating the lower compartment member illustrated in FIG. 1.
- the partition member has an upper compartment member and a lower compartment member, and the upper compartment member is installed on the upper portion of the lower compartment member.
- the lower partition member 70a has a disk-shaped lower plate 73a, and the lower plate 73a has a plurality of lower through holes so that the reaction gas supplied into the upper buffer space moves to the lower buffer space through the lower through holes. Can be.
- the lower plate 73a has a circular recessed portion 73b recessed from the upper surface at the center thereof.
- the lower inner compartment member 78 is installed in the depression 73b to partition the space in the depression 73b into one circular lower central zone 75a and eight fan-shaped lower intermediate zones 75b.
- the lower inner connecting member 178 extends radially from the outer circumferential surface with respect to the center of the lower inner partition member 78 and contacts the inner wall of the recess 73b to fill the space in the recess 73b with eight lower middle zones. Section 75b and block each other.
- the lower inner compartment member 78 and the lower inner connection member 178 have a thickness substantially equal to the depth of the recess 73b.
- the lower flange 76 is disposed along the edge of the lower plate 73a and protrudes from the upper surface of the lower plate 73a.
- the lower outer connection member 176 extends radially from the inner wall of the lower flange 76 toward the center of the lower inner partition member 78 and is spaced apart from the inner wall of the recess 73b.
- the upper outer partition member 74 to be described later is disposed between the lower outer connecting member 176 and the lower inner connecting member 178, and the separation distance between the lower outer connecting member 176 and the inner wall of the recess 73b. It is generally the same as the width of the upper outer compartment member 74.
- the outer connecting member 176 partitions the space of the lower plate 73a into eight edge regions 79c to block each other.
- the height of the lower outer connecting member 176 is substantially the same as the height of the flange 76.
- the depression 73b, the lower inner compartment member 78, and the lower flange 76 form concentric circles.
- the upper partition member 70b shown in FIG. 1 is a perspective view illustrating the upper partition member 70b shown in FIG. 1.
- the upper partition member includes a disk-shaped upper plate 71, and the upper plate 71 includes a plurality of upper through holes so that the reaction gas supplied into the upper buffer space is an upper through hole. It can be moved to the upper portion of the lower plate (73a) through.
- the upper inner compartment member 72 is installed at the center of the upper plate 71 and partitioned into an upper middle region 79a and an upper middle region 79b.
- the upper flange 74 is disposed along the edge of the upper plate 71, and the upper inner connecting members 172 are installed between the upper inner partition member 72 and the upper flange 74 to the upper inner partition member 72. It is arranged radially about).
- the upper inner connecting members 172 partition and block the upper middle zones 79b.
- the upper inner partition member 72 and the upper flange 74 forms a concentric circle.
- the upper partition member 70b is installed on the upper portion of the lower partition member 70a. Therefore, the upper buffer space is formed between the edge regions 79c, the upper flange 74 and the upper inner compartment member 72 / lower inner compartment member 78, located between the lower flange 76 and the upper flange 74. Middle zones 79b, 75b located in the center, and central zones 79a, 75a located inside the upper inner compartment member 72 / lower inner compartment member 78, each of which has a lower buffer. In communication with the space 77.
- the gas supply ports 40a, 40b, 40c, and 40d are fixedly installed in the upper chamber 20 and disposed to correspond to respective diffusion zones.
- the edge gas supply ports 40a and 40d are located at the top of the edge zone 79c, and the intermediate gas supply ports 40b and 40c are located at the top of the intermediate zone 79b and 75b.
- the gas supply port is omitted in the upper portion of the central zones 79a and 75a, but a separate gas supply port may be installed in the upper portion of the central zones 79a and 75a.
- the gas supply ports 40a, 40b, 40c, and 40d supply reaction gases to respective diffusion zones, and the supplied reaction gas is provided through the lower compartment member 70a and the upper compartment member 70b to the lower buffer space 77. After moving to the inner space (3) through the injection holes (65).
- Gas supply lines 42a, 42b, 42c and 42d are connected to the respective gas supply ports 40a, 40b, 40c and 40d, and reaction gas is supplied through gas supply lines 42a, 42b, 42c and 42d. Are supplied to the ports 40a, 40b, 40c, and 40d.
- Flow regulators 44a, 44b, 44c and 44d are installed on the respective gas supply lines 42a, 42b, 42c and 42d to regulate the supply amount of the reaction gas, and flow regulators 44a, 44b, 44c and 44d It is adjusted via the controller 80.
- a plurality of through holes are formed in the lower plate 73a and the upper plate 71, respectively, but the lower plate 73a and the upper plate 71 are omitted as necessary to form a fan-shaped opening. It can be formed, and the opening can have a generally identical shape with each diffusion zone. The opening may replace the plurality of through holes.
- FIG. 4 is a cross-sectional view schematically showing the flow of the reaction gas of the substrate processing apparatus shown in FIG. 1
- FIG. 5 is a plan view schematically showing the flow of the reaction gas on the substrate shown in FIG.
- the flow of the reaction gas will be described with reference to FIGS. 4 and 5.
- the reaction gas is supplied to the respective diffusion zones through the gas supply ports 40a, 40b, 40c, and 40d, and the respective diffusion zones are blocked from each other in the radial direction of the shower head 60, so that each diffusion zone The reactant gas supplied to is restricted to transfer to other diffusion zones. Thereafter, the reaction gas moves to the lower buffer space 77 through the lower partition member 70a and moves to the surface of the substrate W through the injection holes 65.
- the surface of the substrate (W) can be divided into virtual regions (for example, 17), each diffusion zone is located on top of each region. That is, the central zones 79a and 75a are located at the top of the zone 1, the middle zones 79b and 75b are located at the top of the zone 2-9, and the edge zones 79c are located at the top of the zone VII-17. Located. Therefore, the reaction gas in the intermediate zones 79b and 75b is injected into the zones --9, respectively, and then moves toward the central zones 79a and 75a and the edge zones 79c, and the reaction in the edge zones 79c.
- the gas is injected into the region VII-17, respectively, and then moves to the outside of the intermediate zones 79b and 75b and the substrate W.
- the reaction gas in the intermediate zones 79b and 75b and the edge zones 79c may be partially mixed in the lower buffer space 77, but most of them are sprayed toward the respective regions described above. Therefore, in the embodiment of the present invention, the reaction gas supplied to each of the independent diffusion zones is injected to each region of the corresponding surface of the substrate W, and the supply amount of the reaction gas injected to each region of the surface of the substrate W is artificially adjusted. By adjusting to form a thin film having a uniform thickness.
- the reaction gas injected through the injection holes 65 of the shower head 60 is supplied to the upper portion of the substrate W, and the substrate W is heated by the susceptor 30.
- the reaction gas reacts with the surface of the substrate W to form a thin film.
- the thickness of the thin film is proportional to the supply amount of the reaction gas injected from the upper through the injection holes 65, the portion of the surface of the substrate W is supplied with a small amount of reaction gas is small, the thickness of the thin film
- the portion where the positive reaction gas is supplied has a large thickness of the thin film. Therefore, when the reaction gas is uniformly supplied with respect to the entire surface of the substrate W, the thin film may have a uniform thickness.
- the thickness of the thin film is proportional to the heating temperature of the susceptor 30 in addition to the supply amount of the reaction gas.
- the portion of the surface of the substrate W having a low heating temperature has a small thickness and the portion having a high heating temperature has a thin film portion. Big thickness Therefore, when the heating temperature of the susceptor 30 is uniform, the thin film may have a uniform thickness, and the susceptor 30 having a uniform heating temperature as a whole is ideal.
- the size of the susceptor 30 increases in size recently, which causes difficulty in forming a uniform temperature distribution on the substrate W. That is, in the process of heating the substrate W to the process temperature, failure or deterioration of the heater, and radiant heat of the heater may be locally unbalanced.
- the supply amount of the reaction gas is artificially unevenly adjusted to form a thin film having a uniform thickness.
- the thickness of the thin film is measured.
- the same amount of reaction gas to the area of the substrate (W) surface can be injected.
- the supply amount of the reaction gas supplied to each diffusion zone may be adjusted in proportion to the measured thickness of the thin film. That is, when the thickness of the thin film is thicker than the reference value in a specific region of the surface of the substrate (W), it is possible to reduce the amount of reaction gas supplied to the diffusion region located above the region.
- the controller 80 described above may increase or decrease the amount of reaction gas supplied to each diffusion zone by controlling the flow controllers 44a, 44b, 44c, and 44d according to the measured thickness of the thin film.
- the reference value described above may be an average value of the measured thin film thickness, and the controller 80 may calculate an average value from the measured thin film thickness. In this way, a few adjustments can be made to form a thin film with a uniform thickness, which can then be applied to the actual process.
- the unreacted gas and the reaction by-products generated when the thin film is formed are forced into the exhaust pump 19 installed in the exhaust line 17, and the exhaust space is formed through the plurality of exhaust holes 53 formed in the exhaust ring 50.
- the exhaust gas may be discharged to the outside through the exhaust passage 13, the exhaust port 15, and the exhaust line 17.
- FIG. 6 is a cross-sectional view schematically illustrating a substrate processing apparatus according to another exemplary embodiment of the present invention
- FIG. 7 is a perspective view illustrating the partition member illustrated in FIG. 6.
- the partition member 70 includes a lower plate 73 having a disc shape, and the lower plate 73 has a plurality of through holes so that the reaction gas supplied into the upper buffer space passes through. The holes may move to the lower buffer space 75.
- the inner compartment member 72, the outer compartment member 74, and the flange 76 are ring-shaped disposed on concentric circles, and are sequentially spaced apart in the radial direction from the center of the lower plate 73.
- the inner compartment member 72, the outer compartment member 74, and the flange 76 are installed between the upper surface of the lower plate 73 and the upper chamber 20 so that the central zone 75a and the intermediate zone 75b, And the edge regions 75c are formed.
- the central zone 75a is formed inside the inner partition member 72, the middle sections 75b are formed between the inner partition member 72 and the outer partition member 74, and the edge sections 75c are formed. It is formed between the outer partition member 74 and the flange 76.
- the inner connection members 172 are installed between the inner compartment member 72 and the outer compartment member 74 and are disposed radially about the inner compartment member 72.
- the inner connecting members 172 partition and intercept the intermediate zones 75b.
- the outer connecting members 174 are disposed between the outer partition member 74 and the flange 76 and disposed radially about the inner partition member 72.
- the outer connecting members 174 partition and intercept the edge zones 75c.
- FIG. 8 is a cross-sectional view schematically showing the flow of the reaction gas of the substrate processing apparatus shown in FIG. 6.
- the reaction gas is supplied to the respective diffusion zones through the gas supply ports 40a, 40b, 40c, and 40d, and the respective diffusion zones are blocked from each other in the radial direction of the shower head 60, so that each diffusion zone The reactant gas supplied to is restricted to transfer to other diffusion zones. Thereafter, the reaction gas moves to the lower buffer space 75 through the partition member 70 and moves to the surface of the substrate W through the injection holes 65.
- the present invention can be applied to various types of semiconductor manufacturing equipment and manufacturing methods.
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Abstract
Description
Claims (11)
- 상부가 개방된 하부챔버;상기 하부챔버의 상부를 개폐하며, 상기 하부챔버와 함께 기판에 대한 공정이 이루어지는 내부공간을 형성하는 상부챔버;상기 상부챔버의 하부에 설치되어 상기 내부공간을 향하여 반응가스를 공급하며, 상기 상부챔버와의 사이에 버퍼공간이 형성되는 샤워헤드;상기 버퍼공간 내에 설치되어 상기 버퍼공간을 복수의 확산구역들로 구획하는 구획부재; 및상기 상부챔버에 형성되어 각각의 상기 확산구역을 향하여 상기 반응가스를 공급하는 복수의 가스공급포트들을 포함하는, 기판처리장치.
- 제1항에 있어서,상기 확산구역은 중앙구역 및 복수의 가장자리구역들을 포함하며,상기 구획부재는,상기 중앙구역의 둘레에 배치되며, 내측에 형성된 상기 중앙구역과 외측에 형성된 상기 가장자리구역들을 구획하는 내측구획부재; 및상기 내측구획부재의 외측에 연결되어 상기 가장자리구역들을 서로 차단하는 복수의 연결부재들을 포함하는, 기판처리장치.
- 제2항에 있어서,각각의 상기 가스공급포트는 각각의 상기 가장자리구역에 연결되는, 기판처리장치.
- 제1항에 있어서,상기 확산구역은 중앙구역 및 복수의 중간구역들, 그리고 복수의 가장자리구역들을 포함하며,상기 구획부재는,상기 중앙구역의 둘레에 배치되며, 내측에 형성된 상기 중앙구역과 외측에 형성된 상기 중간구역들을 구획하는 내측구획부재;상기 내측구획부재의 외측에 연결되어 상기 중간구역들을 서로 차단하는 복수의 내측연결부재들;상기 내측구획부재의 둘레에 이격배치되며, 내측에 형성된 상기 중간구역들과 외측에 형성된 상기 가장자리구역들을 구획하는 외측구획부재; 및상기 외측구획부재의 외측에 연결되어 상기 가장자리구역들을 서로 차단하는 복수의 외측연결부재들을 포함하는, 기판처리장치.
- 제4항에 있어서,각각의 상기 가스공급포트는 각각의 상기 가장자리구역 및 각각의 상기 중간구역에 연결되는, 기판처리장치.
- 제1항 내지 제5항 중 어느 한 항에 있어서,상기 기판처리장치는,각각의 상기 가스공급포트에 연결되어 상기 반응가스를 공급하는 복수의 가스공급라인들;각각의 상기 가스공급라인을 개폐하는 복수의 유량조절기들; 및각각의 상기 유량조절기에 연결되어 각각의 가스공급라인을 통한 상기 반응가스의 공급량을 조절하는 제어기를 더 포함하는, 기판처리장치.
- 제6항에 있어서,상기 제어기는 상기 가스공급라인들 중 어느 하나에 공급되는 상기 반응가스의 공급량과 다른 하나에 공급되는 상기 반응가스의 공급량이 서로 다르도록 상기 유량조절기들을 제어하는, 기판처리장치.
- 제1항 내지 제5항 중 어느 한 항에 있어서,상기 구획부재는 상기 버퍼공간의 바닥면으로부터 이격배치되는, 기판처리장치.
- 제1항 내지 제5항 중 어느 한 항에 있어서,상기 기판처리장치는,상기 내부공간에 설치되어 상기 기판이 상부에 놓여지는 서셉터;상기 하부챔버의 측벽을 따라 이격배치되며, 상기 서셉터의 상부에 위치하는 복수의 배기홀들을 가지는 배기링; 및상기 하부챔버의 측벽에 고정설치되어 상기 배기링을 지지하는 지지부재를 더 포함하되,상기 하부챔버의 측벽과 상기 배기링 사이에 배기공간이 형성되어 상기 하부챔버의 측벽에 형성된 배기포트와 연통되는, 기판처리장치.
- 챔버의 내부공간 내에 설치되며 외부로부터 공급된 반응가스가 확산되는 버퍼공간을 가지는 샤워헤드를 이용하여 기판을 처리하는 방법에 있어서,상기 버퍼공간을 복수의 확산구역들로 구획하고 상기 확산구역들 중 어느 하나에 공급되는 상기 반응가스의 공급량과 다른 하나에 공급되는 상기 반응가스의 공급량을 서로 다르게 조절하되,상기 확산구역들 중 어느 하나에 대응되는 상기 기판의 영역과 다른 하나에 대응되는 상기 기판의 영역은 공정도가 서로 다른, 기판처리방법.
- 제10항에 있어서,상기 버퍼공간은 상기 샤워헤드의 중앙에 위치하는 중앙구역 및 상기 중앙구역의 둘레에 배치되는 가장자리구역을 가지는, 기판처리방법.
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- 2014-12-10 CN CN201480070510.4A patent/CN105849864B/zh active Active
- 2014-12-10 JP JP2016536227A patent/JP6336079B2/ja active Active
- 2014-12-10 US US15/038,672 patent/US10145012B2/en active Active
- 2014-12-10 WO PCT/KR2014/012124 patent/WO2015102256A1/ko active Application Filing
- 2014-12-22 TW TW103144733A patent/TWI532876B/zh active
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Also Published As
Publication number | Publication date |
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CN105849864A (zh) | 2016-08-10 |
CN105849864B (zh) | 2019-07-30 |
US10145012B2 (en) | 2018-12-04 |
KR101560623B1 (ko) | 2015-10-15 |
TW201527585A (zh) | 2015-07-16 |
JP2017503340A (ja) | 2017-01-26 |
US20160289831A1 (en) | 2016-10-06 |
KR20150081020A (ko) | 2015-07-13 |
JP6336079B2 (ja) | 2018-06-06 |
TWI532876B (zh) | 2016-05-11 |
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